Component with reduced absorption and method for producing a component

Abstract

Component (10) with a carrier (1), a semiconductor body (2) arranged on the carrier, an intermediate layer (3, 31, 32) arranged at least in regions between the carrier and the semiconductor body, and a first contact structure (41), in which - the semiconductor body comprises a first semiconductor layer (21), a second semiconductor layer (22) and an active zone (23) arranged vertically between the semiconductor layers (21, 22) and configured to generate electromagnetic radiation, - the active zone has locally deactivated regions (23D, 23E) along lateral directions which are not designed to generate electromagnetic radiation, - the semiconductor body has an opening (2R) extending through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer, - the first contact structure is designed for electrically contacting the first semiconductor layer and overlaps with the opening in plan view, and - the active zone (23) is divided into a plurality of isolated active regions (23A), each isolated active region (23A) being assigned an inner deactivated region (23D, 23E) and the inner deactivated region being partially or fully laterally enclosed by the associated isolated active region, the component having at least one of the following additional features, according to which: i. the locally deactivated regions (23D, 23E) continue to be electrically conductive and have a higher band gap than active regions (23A) of the active zone; or ii. the opening (2R) has a network of interconnected separating trenches (2T), so that the opening is trench-shaped and connected in some areas, and the isolated active regions (23A) are each enclosed in lateral directions by the deactivated regions (23D, 23E).

Description

A component with reduced absorption and thus with improved efficiency is provided. Furthermore, a method for producing a component is specified.The efficiency of a light-emitting component is greatly dependent on possible absorption losses. The absorption losses occur, for example, within a light-emitting semiconductor body or at metal contacts of the component.In order to reduce the absorption losses at the electrical contacts, the contacts can be coated with radiation-reflecting material such as silver or formed from transparent electrically conductive materials. In addition, the contacts made of silver or transparent electrically conductive materials sometimes do not have the required electrical conductivity.In order to reduce the absorption losses within the semiconductor body, the semiconductor body can be formed with regard to its layer thickness and / or material selection in such a way that the absorption losses are minimized. However, by reducing the layer thickness or selecting the specific material of the semiconductor body, the efficiency of the component with respect to light generation can be adversely affected.DE 10 2010 025 320 A1 relates to an optoelectronic component having a semiconductor chip and a carrier which is connected to the semiconductor chip by means of a connecting layer made of a metal or a metal alloy, wherein the semiconductor chip has electrical connection regions facing the carrier and the carrier has electrical rear-side contacts on a rear side facing away from the semiconductor chip.US 2016 / 0 197 232 A1 relates to a light-emitting diode (LED) having a PN diode layer, an upper current distribution layer, a lower current distribution layer, an active zone between the upper current distribution layer and the lower current distribution layer, and PN diode layer side walls which extend over the upper current distribution layer, the active zone and the lower current distribution layer.One object is to specify a component, in particular an optoelectronic component, having increased efficiency. A further object is to specify a reliable and cost-effective method for producing a component, in particular a component described here.These objects are achieved by a component and by a method for producing a component according to the independent claims. Further embodiments of the component or of the method for producing the component are the subject matter of the further claims.According to at least one embodiment of the component, the latter has a carrier and a semiconductor body arranged on the carrier. The semiconductor body comprises a first semiconductor layer, a second semiconductor layer and an active zone, wherein the active zone is arranged between the first semiconductor layer and the second semiconductor layer in the vertical direction. In particular, the active zone is configured for generating electromagnetic radiation, for example in the infrared, visible or ultraviolet spectral range. The first semiconductor layer and the second semiconductor layer can be embodied to be n-conducting or p-conducting, or vice versa. The first semiconductor layer and the second semiconductor layer can each be formed as a single layer or as a layer sequence and / or have a plurality of partial layers arranged one above the other. The semiconductor body has, in particular, a diode structure. The component is in particular a semiconductor chip. The carrier is in particular the chip carrier, in particular the only chip carrier of the component.The semiconductor body may be formed of a III / V compound semiconductor material. A III / V compound semiconductor material includes a third main group element such as B, Al, Ga, In and a fifth main group element such as N, P, As. In particular, the term "III / V compound semiconductor material" comprises the group of binary, ternary or quaternary compounds containing at least one element from the third main group and at least one element from the fifth main group, for example nitride and phosphide compound semiconductors. Such a binary, ternary or quaternary compound may also have, for example, one or more dopants and additional constituents. For example, the semiconductor body is based on GaN, InGaN, AlGaN, InGaAlN, InGaP, InGaAlP, InGaAlAs or on AlGaAs. Also, the semiconductor body may be formed of an II / VI compound semiconductor material.According to at least one embodiment of the component, the latter has an intermediate layer which is arranged at least in regions between the carrier and the semiconductor body. The intermediate layer is in particular designed to be electrically conductive. For example, the intermediate layer is configured for the electrical contacting of the first or the second semiconductor layer. It is possible for the intermediate layer to have sublayers which are electrically insulated from one another, in particular, one of the sublayers being provided for electrically contacting the first semiconductor layer and another of the sublayers being configured for electrically contacting the second semiconductor layer.According to at least one embodiment of the component, the latter has a first contact structure and a second contact structure. The first contact structure or the second contact structure can be designed as a structured or contiguous connection layer, which in particular directly or indirectly adjoins the first semiconductor layer or the second semiconductor layer. The terminal layer may be formed of a metal such as copper, aluminum, or silver. It is possible for the first contact structure to be arranged on a surface of the semiconductor body facing away from the carrier. It is also conceivable for the first contact structure to be arranged between the carrier and the semiconductor body, wherein the first contact structure extends through the second semiconductor layer and the active zone for the electrical contacting of the first semiconductor layer. For example, the second contact structure is arranged between the semiconductor body and the carrier. It is possible that the first contact structure or the second contact structure is electrically connected to the intermediate layer or to a sub-layer of the intermediate layer.According to at least one embodiment of the device, the active zone is locally deactivated along lateral directions. The local deactivation may be by local implantation, local diffusion, or by ablation and regrowth. In this case, it is possible for the local implantation, diffusion and / or removal to take place through the second semiconductor layer and the active zone to the first semiconductor layer or into the first semiconductor layer. The active zone has in particular deactivated regions which are not configured to generate electromagnetic radiation. The deactivated regions of the active zone are directly adjacent in particular to the active regions of the active zone which are configured to generate electromagnetic radiation during operation of the component. In particular, due to different material compositions or due to impurities, impurities or impurity ions in the deactivated regions of the active zone, the active regions of the active zone have a lower band gap compared to their environment. This leads to nonradiative recombinations of charge carriers in the environment of the active zone, in particular at the edge of the active zone, being less favored.A lateral direction is understood to mean a direction which runs in particular parallel to a main extension surface of the carrier or of the semiconductor body. A vertical direction is understood to mean a direction which is directed in particular perpendicularly to the main extension surface of the carrier or of the semiconductor body. The vertical direction and the lateral direction are in particular orthogonal to one another.According to at least one embodiment of the device, the locally deactivated regions are the regions of the active zone implanted or diffused in with impurities or with impurity ions. Alternatively, the locally deactivated regions could be the ablated and re-grown regions of the active zone.The locally deactivated regions can furthermore be designed to be electrically conductive. In particular, the deactivated regions and the first semiconductor layer have freely movable charge carriers of different charge carrier types. For example, the deactivated regions are n-conductive and the first semiconductor layer is p-conductive, or vice versa. In contrast to the active regions of the active zone, the locally deactivated regions are preferably not configured to generate electrical radiation during operation of the component.The deactivation due to the diffusion or implantation, which in particular follows a thermal treatment, increases the band gap of the deactivated regions. The active regions of the active zone, which are surrounded in particular by the deactivated regions, thus have a smaller band gap than the surrounding deactivated regions. The increase in the band gap is attributable in particular to the mixing of the material of the quantum barriers and quantum well layers (quantum well mixing).During ablation and regrowth, a lower band gap material may be ablated. The ablated regions may be re-grown with a higher band gap material such that the deactivated and re-grown regions have a higher band gap than their vicinity.The locally deactivated regions thus have a higher band gap than the active regions of the active zone. The implantation, diffusion or ablation and regrowth of the active region, such as around the active regions, may result in a local displacement of the pn junction within the original active region. The new position of the effective pn junction zone is in particular somewhat below the original pn junction zone. In particular, the deactivated regions have a higher doping concentration than the activated regions of the active zone. The higher doping concentration may result in band bending, for instance at the edges of the active regions. The band bending can prevent charge carriers, for example in the form of electrons or holes injected into the active regions, from reaching the edges of the active regions and from recombination there in a nonradiative manner.According to at least one embodiment of the component, the semiconductor body has an opening. The opening extends in particular through the second semiconductor layer and the active zone towards the first semiconductor layer. It is possible that the opening extends only as far as the first semiconductor layer or into the first semiconductor layer. In plan view, the opening may take the form of a multibranched mask capable of dividing the active region into a plurality of laterally spaced active regions. For example, the opening has the form of a network of interconnected isolation trenches. In plan view, the opening or openings is / are located, for example, in the deactivated regions, in particular exclusively in the deactivated regions. The deactivated regions allow the active zone to be divided into a plurality of isolated, spatially isolated and active regions.The semiconductor body may be divided into a plurality of subregions, wherein each of the subregions may include at least one active region or a plurality of active regions of the active zone and at least one locally deactivated region of the active zone. In this sense, these subregions form the active regions of the semiconductor body. It is also possible for each of the subregions to have a plurality of locally deactivated regions of the active zone. In particular, the sub-regions of the semiconductor body can be controlled individually, i.e. independently of one another.The opening may be partially filled with a material of the intermediate layer. It is possible that a major part of the opening, for example between 50% and 90%, for example between 60% and 80%, inclusive, is filled with a material or with the materials of the intermediate layer. The opening may have side walls passivated with an electrically insulating material. The side walls of the opening itself may be formed in regions by surfaces of the deactivated regions of the active zone or of the semiconductor body. The opening is in particular free of the active zone. In other words, the opening and the active zone are free of overlaps in plan view.According to at least one embodiment of the component, the first contact structure overlaps with the opening of the semiconductor body in plan view. In plan view, the first contact structure is thus located at the locations at which the active zone, in particular the active regions of the active zone, is / are not present. Direct shading by the first contact structure or direct radiation absorption by the first contact structure is thus avoided.In at least one embodiment of the component, the latter has a carrier, a semiconductor body arranged on the carrier, an intermediate layer arranged at least in regions between the carrier and the semiconductor body, and a first contact structure. The semiconductor body includes a first semiconductor layer, a second semiconductor layer and an active zone, wherein the active zone is arranged between the semiconductor layers in the vertical direction and is configured to generate electromagnetic radiation. The active zone has locally deactivated regions along the lateral directions, which are not configured to generate electromagnetic radiation. In addition, the semiconductor body has an opening which extends through the second semiconductor layer and the active zone towards the first semiconductor layer. In this case, the opening can extend as far as the first semiconductor layer or into the first semiconductor layer. The opening is also different from the deactivated regions of the active zone. In particular, the opening is partially filled with a material of the intermediate layer. The first contact structure is configured for the electrical contacting of the first semiconductor layer and overlaps with the opening in plan view.The opening or openings is / are located in particular exclusively in the deactivated regions. The opening is in particular free of the active regions of the active zone in which electromagnetic radiation is generated. Since the first contact structure also overlaps the opening in plan view, the first contact structure is located in plan view in particular in the regions in which no electromagnetic radiation is emitted, such that radiation losses due to direct absorption at the first contact structure are minimized.Since the active zone is divided into radiation-active regions and radiation-inactive regions, wherein the radiation-inactive regions can be effected by selective deactivation or removal of the material of the active zone, the component can be designed on the basis of the structured active zone in such a way that it has a predefined selective luminous pattern, as a result of which the efficiency of the component is increased overall. The component has a second contact structure, which is configured in particular for the electrical contacting of the second semiconductor layer. In plan view, the second contact structure can overlap in the active zone with the radiation-inactive regions, that is to say with the deactivated regions.According to at least one embodiment of the component, the active zone is divided into a plurality of singulated active regions, wherein an inner deactivated region is assigned to each singulated active region and the inner deactivated region is laterally surrounded partially or fully over the periphery by the associated singulated active region. The component can have at least one of the following additional features, according to which: i. the locally deactivated regions are furthermore embodied to be electrically conductive and have a higher band gap than active regions (of the active zone; or ii. the opening has a network of separating trenches connected to one another, such that the opening is embodied in regions in a trench-like and contiguous manner, and the isolated active regions are each surrounded by the deactivated regions in lateral directions.It is possible that the component has both the additional feature i and the additional feature ii.According to at least one embodiment of the component, the active zone has active regions which are configured to generate electromagnetic radiation, wherein the first contact structure and / or the second contact structure are / is free from an overlap with the active regions of the active zone in plan view. Direct coverage of the active regions of the active zone and thus absorption of the emitted radiation by the first and / or second contact structure can be avoided.According to at least one embodiment of the component, the opening has a network of interconnected separating trenches, such that the opening is implemented in regions in a trench-like and contiguous manner. The active zone can be divided into a plurality of isolated active regions, which are each surrounded, in particular fully surrounded, by the deactivated regions in lateral directions. The isolated active regions can thus be partially or fully surrounded by the deactivated regions in lateral directions. The separating trenches are covered in particular in regions with the deactivated regions.According to at least one embodiment of the device, an inner deactivated region of the active zone is assigned to each singulated active region. The inner deactivated region can be laterally surrounded, in particular fully surrounded, by the associated isolated active region. The inner deactivated region can thus be laterally surrounded partially or fully over the entire circumference by the associated isolated active region. Each of the active regions of the semiconductor body may include an active region of the active zone and at least one or exactly two or more deactivated regions of the active zone.According to at least one embodiment of the component, the latter has a second contact structure for electrically contacting the second semiconductor layer, wherein the second contact structure is arranged in the vertical direction between the carrier and the semiconductor body. In particular, in plan view, the second contact structure overlaps with the inner deactivated region of the active zone or with the inner deactivated regions of the active zone.According to at least one embodiment of the component, an outer deactivated region of the active zone is / is assigned to each singulated active region, wherein the outer deactivated region laterally encloses the associated singulated active region.Thus, each of the singulated active regions of the semiconductor body may have an edge region that is not configured to generate electromagnetic radiation. The deactivated region may form a non-radiating edge region of the singulated active region and in particular directly adjoin the opening of the semiconductor body or a separation trench of the opening.The singulated active region is in particular configured continuously. In this case, it is possible for the isolated active region to have an inner deactivated active zone. In plan view, the first contact structure or the second contact structure may be arranged on or in the inner deactivated of the active zone. In plan view, the inner deactivated region can overlap with the second contact structure, in particular with a partial layer of the contact structure, and can cover the latter in particular completely.According to at least one embodiment of the component, the first contact structure is embodied in the form of a through-contact, wherein the through-contact is arranged within the opening. For the electrical contacting of the first semiconductor layer, the through-connection can extend through the second semiconductor layer and the active zone. The through-connection can be embodied as part of the intermediate layer.According to at least one embodiment of the component, the first contact structure is arranged on a surface of the semiconductor body facing away from the carrier. In particular, the first contact structure directly adjoins the first semiconductor layer. The first contact structure can be realized continuously. In particular, the first contact structure has openings in the form of windows, wherein the active regions of the semiconductor body or of the active zone are arranged in the windows of the contact structure in plan view and are thus in particular free of overlaps with the first contact structure.According to at least one embodiment of the component, the intermediate layer is a coherent and electrically conductive layer, wherein the intermediate layer is configured exclusively for electrically contacting the second semiconductor layer of the semiconductor body. According to at least one embodiment of the component, the intermediate layer has a first sublayer for electrically contacting the first semiconductor layer and a second sublayer for electrically contacting the second semiconductor layer, wherein the first sublayer and the second sublayer are laterally spaced apart. For example, the first sublayer and the second sublayer are electrically insulated from one another by an insulation structure. The first sub-layer can be assigned to a first electrical polarity of the component. The second sub-layer can be assigned to a second electrical polarity of the component. The intermediate layer can have a plurality of such first sublayers and / or a plurality of such second sublayers. In particular, the first sublayer and the second sublayer are free of overlap in plan view.According to at least one embodiment of the component, the intermediate layer has a first sublayer for electrically contacting the first semiconductor layer and a second sublayer for electrically contacting the second semiconductor layer, wherein the first sublayer and the second sublayer are arranged one above the other in the vertical direction and are electrically insulated from one another by an insulation structure or by insulation structures.According to at least one embodiment of the device, the active zone comprises locally deactivated regions and active regions along lateral directions, wherein the deactivated regions and the active regions are based on the same semiconductor material. For example, the deactivated regions have implanted or diffused-in impurities or impurity ions compared to the active regions, whereby the deactivated regions have a higher band gap than the active regions. The impurities and impurity ions may be impurities or dopants. The local implantation or diffusion of such substances into the active zone generally leads to the mixing of quantum wells (quantum well mixing) and thus to an increase in the band gap.According to at least one embodiment of the device, the active zone comprises locally deactivated regions and active regions along the lateral directions, wherein the deactivated regions and the active regions differ from one another in terms of material composition. In particular, the deactivated regions and the second semiconductor layer are based on the same semiconductor material. The deactivated regions are formed, for example, by local ablation of the active zone, wherein the ablated regions of the active zone are re-grown. For example, the original active zone is locally removed, for example by means of an etching method, in such a way that material of the active zone is completely removed in some regions, wherein these regions are subsequently filled with the material of the second semiconductor layer. The ablation and regrowth of the active region results in a local displacement of the pn junction within the original active region. The new position of the effective pn junction zone is in particular somewhat below the original pn junction zone.In an embodiment of an electronic device, it includes the component described herein. The electronic device can be a smartphone, touchpad, laser printer, recognition camera, display or a system of LEDs, sensors, laser diodes and / or detectors. The component can also be used in a light source. For example, the component is provided for general lighting, for instance for interior or exterior lighting. The component can be designed as a light source for a headlight, for example for a motor vehicle headlight. For example, the device is a high power LED.In at least one embodiment of the method for producing a component having a carrier, a semiconductor body arranged on the carrier, an intermediate layer arranged at least in regions between the carrier and the semiconductor body, and a first contact structure, a semiconductor body is provided. The semiconductor body has a first semiconductor layer, a second semiconductor layer and an active zone which is arranged between the semiconductor layers in the vertical direction and is configured to generate electromagnetic radiation. The semiconductor body has an opening which extends through the second semiconductor layer and the active zone towards the first semiconductor layer. The opening is partially filled with a material of the intermediate layer, wherein the first contact structure is configured for electrically contacting the first semiconductor layer and overlaps with the opening in plan view. In particular, the active zone is deactivated in regions along lateral directions, such that the active zone has locally deactivated regions which are not configured to generate electromagnetic radiation. The opening is different from the deactivated regions of the active zone.According to at least one embodiment of the method, the active zone is / is divided into a plurality of singulated active regions, wherein an inner deactivated region is associated with each singulated active region and the inner deactivated region is laterally surrounded partially or fully over the entire circumference by the associated singulated active region. The component to be produced can have at least one of the following additional features according to which: i. the locally deactivated regions are furthermore designed to be electrically conductive and have a higher band gap than active regions of the active zone; or ii. the opening has a network of separating trenches connected to one another, such that the opening is designed in regions in a trench-like and contiguous manner, the isolated active regions are each surrounded by the deactivated regions in lateral directions.It is also possible for the component to be produced to have both the additional feature i and the additional feature ii.According to at least one embodiment of the method, the active zone is deactivated in regions along lateral directions by ion implantation in order to generate the deactivated regions. Alternatively or additionally, it is possible for the active zone to be deactivated in regions along lateral directions by diffusion of impurity atoms or impurity ions.According to at least one embodiment of the method, the active zone is locally ablated for generating the deactivated regions, for example by means of an etching method, wherein the locally ablated regions are subsequently re-grown with a material of the second semiconductor layer. It is possible that after the removal and regrowth of the semiconductor bodies, in particular the active zone, is deactivated further in regions by implantation or diffusion. In other words, the deactivated regions may be generated by ablation and regrowth and / or by implantation or diffusion.The method described here is particularly suitable for producing a component described here. The features described in connection with the component can therefore also be used for the method and vice versa.Further embodiments and developments of the component or of the method for producing the component result from the exemplary embodiments explained below in connection with FIGS. 1 to 7B. The following are shown: FIGS. 1 and 2 show schematic representations of various exemplary embodiments of a component in sectional views, FIGS. 3A, 3B, 3C, 3D, 3E and 3F are schematic representations of different steps of a method for producing a component, in plan view or in sectional view, respectively, FIGS. 4A and 4B show schematic representations of further exemplary embodiments of a component in sectional views, FIGS. 5A, 5B, 5C, 5D, 5E and 5F show schematic representations of different steps of a further method for producing a component, in each case in plan view or in sectional view, FIGS. 6A and 6B show schematic representations of further steps of a method for producing a component in sectional views, and FIGS. 7A and 7B show schematic representations of further exemplary embodiments of a component in sectional views.Identical, similar or identically acting elements are provided with the same reference numerals in the figures. The figures are schematic representations in each case and are therefore not necessarily true to scale. Rather, comparatively small elements and in particular layer thicknesses can be represented with exaggerated size for clarity.FIG. 1 shows a component 10 having a carrier 1 and a semiconductor body 2 arranged on the carrier 1. The component 10 has a front side 10V, which is designed in particular as a radiation exit side of the component 10. The front side 10V is structured and has a plurality of decoupling structures. For example, the front side 10V is formed by a surface of the semiconductor body 2. The component 10 has a rear side 10R facing away from the front side 10V. The rear side 10R is formed by a surface of the carrier 1, in particular by a surface of a cover layer 1C of the carrier 1. The cover layer 1C may be formed of an electrically conductive material. The rear side 10R forms in particular a mounting surface of the component 1. the carrier 1 is in particular different from a growth substrate. For example, the carrier 1 has a base body 1G, wherein the base body 1G can be formed from an electrically conductive material, for example from a metal, or from an electrically insulating material, for example from a ceramic or a plastic. If the base body 1G is formed from an electrically insulating material, the carrier 1 can have through contacts 13 which electrically conductively connect the covering layer 1C to the intermediate layer 3. The through contacts 13 thus extend through the base body 1G along the vertical direction. Such through contacts 13 are schematically illustrated, for example, in FIG. 6B.The semiconductor body 2 has a first, in particular n-conducting, semiconductor layer 21, a second, in particular p-conducting, semiconductor layer 22, and an active zone 23 arranged between the first semiconductor layer 21 and the second semiconductor layer 22. It is also possible for the first semiconductor layer 21 to be p-conducting and the second semiconductor layer 22 to be n-conducting. Both the first semiconductor layer 21 and the second semiconductor layer 22 can be embodied as a single layer or as a layer sequence. FIG. 1 schematically illustrates that the second semiconductor layer 22 may have two or more sublayers. The first semiconductor layer 21 faces away from the carrier 1. The second semiconductor layer 22 faces the carrier 1.An active zone 23 of the device 10 is to be understood as an active region in the semiconductor body 2 in which electromagnetic radiation is generated during the operation of the device 10. In particular, this active region is dispersed between the first semiconductor layer 21 and the second semiconductor layer 22 and is therefore in particular not contiguous. The active zone 23 is structured in this sense and can have a plurality of laterally spaced active regions 23A. Such active regions 23A can be individually electrically contacted and controlled group by group or individually. For example, the active zone 23 comprises a pn junction zone or a collection of pn junction zones in the semiconductor body 2.According to FIG. 1, the semiconductor body 2 has an opening 2R. Along the vertical direction, the opening 2R extends through the second semiconductor layer 22 and the active region 23 toward the first semiconductor layer 21. In FIG. 1, the opening 2R extends into the first semiconductor layer 21. Since the opening 2R does not extend through the first semiconductor layer 21, the first semiconductor layer 21 is still continuous. For example, a continuous surface of the first semiconductor layer 21 forms the radiation exit side of the component 10.The opening 2R can be embodied as a network, in particular as a continuous network comprising a plurality of separation trenches 2T. Such a network of separating trenches 2T is schematically illustrated, for example, in FIG. 3D. The active zone 23 is in particular divided into a plurality of laterally spaced active regions 23A. The second semiconductor layer 22 can also be divided into a plurality of laterally spaced sub-layers, wherein each of the sub-layers of the second semiconductor layer 22 can be assigned exactly to one of the active regions 23A, and in particular vice versa. In lateral directions, the sub-layers of the second semiconductor layer 22 and the active regions 23A of the active zone 23 can each be enclosed, in particular fully enclosed, by the deactivated regions.According to FIG. 1, the opening 2R is partially filled by a material of the intermediate layer 3. The intermediate layer 3 can be embodied as a continuous electrically conductive layer, which is configured in particular for the electrical contacting of the second semiconductor layer 22. For electrically insulating the intermediate layer 3 from the side flanks of the active regions 23A of the active zone 23 and from the first semiconductor layer 21, an insulation structure 5, for example a first insulation structure 51, is arranged between the intermediate layer 3 and the semiconductor body 2. Thus, the intermediate layer 3 is not in direct electrical contact with the side flanks of the active regions 23A and with the first semiconductor layer 21. It is possible that the first insulation structure 51 is designed to be radiation-reflecting. For example, the first insulation structure 51 may comprise radiation-reflecting particles embedded in a matrix material of the insulation structure 51. Alternatively, it is possible that the first insulation structure 51 is formed from an electrically insulating and radiation-reflecting material.According to FIG. 1, the semiconductor body 2 comprises a plurality of laterally spaced apart inactive regions 2I. The inactive regions 2I adjoin the active regions 2A of the semiconductor body 2 along the lateral directions in particular directly. The inactive regions 2I extend through the second semiconductor layer 22 and the active zone 23 to the first semiconductor layer 21 along the vertical direction. Thus, the inactive regions 2I, which each comprise a locally deactivated region 23D, are not configured to generate electromagnetic radiation during operation of the component 10.The semiconductor body 2 has in particular a plurality of isolated, laterally spaced-apart active regions 2A. For example, each active region 2A is assigned an inner inactive region 2I and an outer inactive region 2I of the semiconductor body 2. Partially except for the first semiconductor layer 21, the semiconductor body 2 according to FIG. 1 is thus divided into a plurality of singulated active regions 2A and into a plurality of singulated inactive, in particular inner regions 2I.The outer inactive region 2I forms in particular the side flanks of the respective active region 2A. The inner inactive region 2I can be surrounded, in particular completely surrounded, in lateral directions by the associated active region 23A or by the active regions 23A of the active zone 23. The isolated active region 23A of the active zone 23 can in turn be surrounded, in particular fully surrounded, by the outer inactive region 2I or by the outer locally deactivated region 23D. This is schematically illustrated in a plan view in FIG. 3D, for example. The semiconductor body 2 of the device 10 may have more than 1, 10, 30, 50, 70, 100 or more than 200, for example between 1 and 1000 inclusive or between 1 and 300 inclusive of such singulated active regions 2A. The active regions 2A form, in particular, a periodically repeating pattern in plan view. For example, the semiconductor body 2 comprises a plurality of columns and / or rows of such patterns.For the electrical contacting of the semiconductor body 2, the component 10 has a first contact structure 41 and a second contact structure 42. The second contact structure 42 is arranged between the semiconductor body 2 and the intermediate layer 3. In particular, the second contact structure 42 extends through the insulation structure 5. The second contact structure 42 and the intermediate layer 3 may be formed from different materials. It is possible for the second contact structure 42 to directly adjoin the intermediate layer 3 and / or an inner inactive region 2I or the inner inactive regions 2I. In a plan view of the carrier 1, the inner inactive regions 2I of the semiconductor body 2 may cover, in particular completely cover, the second contact structure 42. Since the inactive regions 2I are not configured to generate electromagnetic radiation, radiation losses due to possible absorption at the second contact structure 42 can be avoided.The outer inactive regions 2I are in particular spatially separated from the inner inactive regions 2I and from the second contact structure 42. The second contact structure 42 comprises a plurality of laterally spaced sub-layers, which can each be assigned exactly to one of the inner inactive regions 2I, and in particular vice versa. Each of the partial layers of the second contact structure 42 is configured in particular for electrically contacting the second semiconductor layer 22 of a singulated active region 2A of the semiconductor body 2.According to FIG. 1, all partial layers of the second contact structure 42 can be electrically conductively connected to the intermediate layer 3. Alternatively, it is possible for the intermediate layer to have a plurality of laterally spaced sub-layers, wherein the sub-layers of the intermediate layer 3 are each electrically conductively connected to exactly one sub-layer or to a plurality of sub-layers of the second contact structure 42. In this way, the active regions 2A of the semiconductor body 2 can be controlled individually or in groups.The second contact structure 42 is illustrated in plan view in FIG. 3F or FIG. 5F, for example. The second contact structure 42 has a plurality of laterally spaced sub-layers, which are each configured for the electrical contacting of one of the active regions 2A. In plan view, the sublayers of the second contact structure 42 are each located, in particular, completely within one of the inner inactive regions 2I of the semiconductor body 2. in other words, each of the sublayers of the second contact structure 42 completely overlaps one of the inner active regions 2I and, in particular, does not project laterally beyond it.According to FIG. 1, the first contact structure 41 is arranged on the side of the front side 10V of the component 10. The first contact structure 41 is configured for the electrical contacting of the first semiconductor layer 21 and can directly adjoin the latter. In a plan view of the carrier 1, the first contact structure 41 has overlaps with the opening 2R or with the separating trenches 2T. In particular, the first contact structure 41 is free from an overlap with the active regions 2A of the semiconductor body 2. thus the first contact structure 41 is also approximately free from an overlap with the active regions 23A of the active zone 23. Direct shadowing of the active regions 2A of the semiconductor body 2 by the first contact structure 41 is thus avoided, whereby radiation losses due to possible absorption at the first contact structure 41 are minimized.The first contact structure 41 is illustrated in a plan view in FIG. 3F or FIG. 5F, for example. The first contact structure 41 can have a circumferential frame and inner distribution webs. The inner distribution webs are in particular electrically conductively connected to the encircling frame. In a plan view of the carrier 1, the first contact structure 41 is situated, in particular apart from its circumferential frame, exclusively in the region of the opening 2R or in the region of the separating trenches 2T. In other words, the distribution ridges of the first contact structure 41 completely overlap with the opening 2R or with the separation trenches 2T and are thus free from overlaps with the active regions 23A of the active zone 23.The inactive regions 2I of the semiconductor body 2 illustrated in FIG. 1 can be deactivated with respect to the generation of electromagnetic radiation by implanting or by diffusing in dopants or impurities, for example impurity ions or impurities. In particular, the active zone 23 may be locally deactivated in the inactive regions 2I such that the locally deactivated regions 23D of the inactive regions 2I have a higher band gap than the active regions 23A of the active zone 23 in the active regions 2A of the semiconductor body 2. dopants such as Zn, Mg, Si, Se or Sn may be used for locally deactivating the active zone 23.The exemplary embodiment of a component 10 illustrated in FIG. 2 corresponds substantially to the exemplary embodiment illustrated in FIG. 1. Except for the design of the active zone 23, the exemplary embodiments described in FIGS. 1 and 2 can be identical. Apart from the features with respect to the active zone 23, the features described in connection with FIG. 1 can therefore also be used for the exemplary embodiment shown in FIG. 2.Instead of locally deactivated regions in the form of implanted or diffused-in regions 23D, the active zone 23 according to FIG. 2 has deactivated regions in the form of ablated and re-grown regions 23E which are not configured to generate electromagnetic radiation during operation of the component 10. The deactivated regions 23E may be filled with a material of the second semiconductor layer 22. The active region 23 is thus divided into a plurality of active regions 23A and a plurality of inactive deactivated regions 23E. Thus, the semiconductor body 2 is also divided into a plurality of active regions 2A and a plurality of inactive regions 2I. To produce the inactive regions 23E or 2I, the original active zone 23 can be partially removed or removed, for example by means of etching, such that only the active, in particular singled out, regions 23A remain on the first semiconductor layer 21. Subsequently, the ablated regions 23E can be re-grown with a material of the second semiconductor layer 22. The material of the backfilled regions 23E is selected with respect to the material of the active regions 23A such that a band gap in the active regions 23A is less than a band gap in the ablated and re-grown regions 23E.According to FIG. 2, the active zone 23 is structured in such a way that the active zone 23 has active regions 23A and deactivated regions 23E, wherein the regions 23A and 23E have, in particular, different materials and different material compositions. According to FIG. 2, the active regions 23A are laterally spaced apart from one another, in particular by a material of the second semiconductor layer 22. In contrast to FIG. 2, the active regions 23A according to FIG. 1 are directly adjacent to the deactivated regions 23D, wherein the active regions 23A and the deactivated regions 23D are based on the same material, in particular originally based on the same material and differ from one another, for example, only with regard to the dopants or doping concentrations.Referring to FIG. 2, the active region 23 may include inner and outer deactivated regions 23E. The outer deactivated regions 23E form, in particular, a non-radiating edge region of the respective singulated active region 2A of the semiconductor body 2. the inner deactivated regions 23E can each be laterally surrounded, in particular fully surrounded, by the active region 23A or by the active regions 23A. In plan view, each sub-layer of the second contact structure 42 in particular completely overlaps with one of the inner deactivated regions 23E. Such a component 10 is schematically illustrated in plan view in FIG. 5F, for example.FIGS. 3A, 3B, 3C, 3D, 3E and 3F show different method steps for producing a component 10 or a plurality of components 10 according to FIG. 1. ACCORDING TO FIG. 3A, a semiconductor body 2 is grown on a substrate 9, in particular on a growth substrate 9. For example, the first semiconductor layer 21, the active zone 23 and the second semiconductor layer 22 are epitaxially applied to the growth substrate 9 in the predetermined sequence. By diffusing in or implanting dopants or impurities, regions 2I of the semiconductor body 2 or regions 23D of the active zone 23 can be locally deactivated. If a region is deactivated locally, this deactivated or inactive region is no longer provided for generating electromagnetic radiation during operation of the component 10.FIG. 3B shows the semiconductor body 2 with the inactive regions 2I and active regions 2A in plan view. One of the deactivated regions 23D or the inactive regions 2I may be contiguous and may extend from one edge to an opposite edge of the semiconductor body 2. If this inactive region 2I is removed in regions, the semiconductor body 2 can have an opening 2R, in particular in the form of a network of separating trenches 2T. The opening 2R from the interconnected separation trenches 2T is schematically illustrated in FIGS. 3B and 3C. In particular, the opening 2R is formed by partial removal of the material of the contiguous inactive region 2I in such a way that side walls of the opening 2R are still covered in regions with the material of the contiguous inactive region 2I.The semiconductor body 2 comprises a plurality of singulated or insulated active regions 2A, wherein the singulated active regions 2A each comprise a lateral frame-shaped edge from the rest of the inactive region 2I. The frame-shaped edge is not configured to generate electromagnetic radiation during operation of the component 10 and in particular has a higher band gap than the regions 23A or 2A. Non-radiative recombinations at the edges of the respective singulated or isolated active region 2A of the semiconductor body can thereby be avoided and in particular due to the band bending.As shown in FIGS. 3B and 3C, the semiconductor body 2 has a plurality of singulated localized inactive regions 2I, each of which is assigned in particular exactly to one of the active regions 2A of the semiconductor body 2. Each of these inactive regions 2I includes a locally deactivated region 23D of the active zone 23.FIG. 3D shows the semiconductor body 2 with a plurality of singulated active regions 2A in plan view. Specifically, each of the singulated active regions 2A includes an outer frame-shaped inactive region 2I and an inner inactive region 2I. The inner inactive region 2I is completely surrounded by the associated active region 2A in lateral directions, wherein the active region 2A is in turn completely surrounded by the outer inactive region 2I. The semiconductor body 2 may include a plurality of such singulated active regions 2A having an inner and an outer inactive region 2I. The number of singulated active regions 2A may be between 1 and 5000 inclusive, such as between 1 and 1000 inclusive, or between 1 and 100 inclusive, for example between 10 and 5000 inclusive, 100 and 5000 inclusive, or between 1000 and 5000 inclusive.The partial layers of the second contact structure 42 can be formed on the inner inactive regions 2I. In particular, the partial layers do not protrude laterally beyond the inner inactive regions 2I. Such partial layers of the second contact structure 42 are schematically illustrated in a sectional view in FIG. 3E and in a plan view in FIG. 3F. The first contact structure 41 is formed in particular on the opening 2R or on the separating trenches 2T. The exemplary embodiment of a component 10 illustrated in FIGS. 3E and 3F corresponds to the exemplary embodiment of a component 10 illustrated in FIG. 1 after the growth substrate 9 is removed and the front side 10V is structured. The component 10 illustrated in FIG. 3F may have a protective layer 2M which completely encloses the semiconductor body 2 in the lateral direction. The protective layer 2M is located in particular in the regions of the mesa trenches formed for singulating a plurality of components 10. The method described here is therefore likewise suitable for producing a plurality of components 10.The exemplary embodiment of a component 10 shown in FIG. 4A corresponds substantially to the exemplary embodiment shown in FIG. 1. In contrast to this, the intermediate layer 3 has a first sublayer 31 and a second sublayer 32, wherein the sublayers 31 and 32 are assigned to different electrical polarities of the component 10. The first insulation structure 51 extends in regions through the intermediate layer 3 and thus isolates the first sublayer 31 from the second sublayer 32.The second sub-layer 32 is configured in particular for the electrical contacting of the second semiconductor layer 22 and is electrically conductively connected to the second contact structure 42. In particular, the second sub-layer 32 has no overlaps with the opening 2R or with the separation trenches 2T of the opening 2R in plan view. The first sublayer 31 extends in particular into the opening 2R and through the first insulation structure 51 to the first semiconductor layer 21. The first sublayer 31 thus forms the first contact structure 41, in particular in the form of a through-connection 40.As shown in FIG. 4A, the first sub-layers 31 and the second sub-layers 32 are arranged side by side along the lateral directions. In plan view, the partial layers 31 and 32 are in particular free of overlap. The front side 10V of the component 10 is in particular free of any electrical contact structures. Shading of the front side 10V by electrical contact structures can thus be avoided.As schematically shown in FIG. 4A, the partial layers 31 and 32 can be electrically conductively connected to different partial regions of the cover layer 1C via different through contacts 13 through the main body 1G. The partial regions of the cover layer 1C can be electrically insulated from one another by the second insulation structure 52.The exemplary embodiment of a component 10 illustrated in FIG. 4B corresponds substantially to the exemplary embodiment illustrated in FIG. 4A. In contrast, the first sublayer 31 and the second sublayer 32 of the intermediate layer 3 are arranged one above the other in the vertical direction. For the electrical contacting with partial regions of the cover layer 1C, some through contacts 13 can extend from the second sublayer 32 through the first sublayer 31.The component 10 has a second insulation structure 52, which is configured to electrically isolate the first sublayer 31 from the second sublayer 32 and is arranged between the sublayers 31 and 32 in the vertical direction. For the electrical contacting of the first semiconductor layer 21, the component 10 has the first contact structure 41 in the form of a through-contact 40 or in the form of a plurality of through-contacts 40. The vias 40 and the first sublayer 31 of the intermediate layer 3 can be formed from the same material or from different materials. According to FIG. 4B, the opening 2R is filled, in particular completely filled, by the vias 40, the insulation structures 51 and 52 and by the second sublayer 32 of the intermediate layer 3.FIGS. 5A, 5B, 5C, 5D, 5E and 5F show different method steps for producing a component 10 or a plurality of components 10 according to FIG. 2. THE method steps shown in FIGS. 5A, 5B, 5C, 5D, 5E and 5F correspond substantially to the method steps shown in FIGS. 3A, 3B, 3C, 3D, FIGS. 3E and 3F show method steps for producing one or more components 10. The exemplary embodiment of a component 10 illustrated in FIGS. 5E and 5F corresponds to the exemplary embodiment of a component 10 illustrated in FIG. 2.The exemplary embodiment of a method step illustrated in FIG. 6A corresponds substantially to the exemplary embodiment illustrated in FIG. 5C. In contrast to this, the opening 2R can be set such that it does not extend into the first semiconductor layer 21 as in FIG. 5C, but rather ends on the first semiconductor layer 22. A component 10 produced after the method step according to FIG. 6A is schematically illustrated in a sectional view in FIG. 6B, for example. The exemplary embodiment of a component 10 illustrated in FIG. 6B corresponds substantially to the exemplary embodiment illustrated in FIG. 2. In contrast, the opening 2R does not extend into the first semiconductor layer 21 but ends thereon. In addition, the carrier 1 has a plurality of vias 13 which extend through the base body 1G and electrically conductively connect the intermediate layer 3 to the covering layer 1C. It is possible for all exemplary embodiments described here to have such through contacts 13.The exemplary embodiments of a component 10 illustrated in FIGS. 7A and 7B substantially correspond to the exemplary embodiment illustrated in FIG. 2. In contrast to this, the intermediate layer 3 has a first sublayer 31 and a second sublayer 32 or a plurality of first and second sublayers 31 and 32, wherein the sublayers 31 and 32 described in FIGS. 7A and 7B are embodied analogously to the sublayers 31 and 32 illustrated in FIGS. 4A and 4B. The features of the sublayers 31 and 32 described in connection with FIGS. 4A and 4B can therefore be used for the exemplary embodiments illustrated in FIGS. 7A and 7B.By partially deactivating the active zone to form the local deactivated regions and also to passivation the edges of the remaining active regions of the active zone, non-radiative recombinations of charge carriers can be reduced or prevented. Deactivation may be by implantation, diffusion, or by ablation and regrowth. By means of the deactivation, it is / can be achieved that a higher band gap is achieved in the deactivated regions and / or band bending is achieved in the edge regions. In order to avoid the shading effects by the contact structures, deep micro-prisms may be formed in the semiconductor body, wherein the contact structures may be formed in regions of the micro-prisms. The formation of the deep micro-prisms also leads to reduced radiation absorption by the semiconductor body.By forming the deactivated regions 23D and / or 23E of the active zone 23 and the selective arrangement of the contact structures 41 and 42, in particular in the overlap regions with the inactive regions 2I of the semiconductor body 2 and / or in the opening 2R, radiation losses due to absorption at the contact structures 41 and 42 or in the semiconductor body 2 can be significantly reduced. By forming separation trenches 2T, in particular in the form of deep micro-prisms, properties with respect to the waveguiding in component 10, in particular in semiconductor body 2, can also be adjusted in a targeted manner, as a result of which internal radiation losses can be minimized.10 Component 10V front side of the component 10R rear side of the component 1 carrier 1C cover layer of the carrier 1G base body of the carrier 13 through contact 2 semiconductor body 2A active region of the semiconductor body 2I inactive region of the semiconductor body 2M mesa trench / protective layer 2R opening of the semiconductor body 2T isolation trench 21 first semiconductor layer 22 second semiconductor layer 23 active zone 23A active region of the active zone 23D deactivated implanted or diffused-in region of the active zone 23E deactivated ablated and re-grown region of the active zone 3 intermediate layer 31 first sub-layer of the intermediate layer / connection layer 32 second sub-layer of the intermediate layer / connection layer 40 through contact 41 first contact structure 42 second contact structure 5 isolation structure 51 first isolation layer 52 second insulation layer 9 substrate / growth substrate

Claims

Component (10) having a carrier (1), a semiconductor body (2) arranged on the carrier, an intermediate layer (3, 31, 32) arranged at least in regions between the carrier and the semiconductor body, and a first contact structure (41), in which - the semiconductor body has a first semiconductor layer (21), a second semiconductor layer (22) and an active zone (23) which is arranged in the vertical direction between the semiconductor layers (21, 22) and is configured to generate electromagnetic radiation, - the active zone has regions (23D, 23E) which are locally deactivated along lateral directions and are not configured to generate electromagnetic radiation, - the semiconductor body has an opening (2R) which extends through the second semiconductor layer and the active zone towards the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer, - the first contact structure is configured for electrically contacting the first semiconductor layer and overlaps with the opening in plan view, and - the active zone (23) is divided into a plurality of singulated active regions (23A), wherein each singulated active region (23A) is assigned an inner deactivated region (23D, 23E) and the inner deactivated region is laterally surrounded partially or fully by the associated singulated active region, wherein the component has at least one of the following additional features, according to which: i. the locally deactivated regions (23D, 23E) are furthermore configured to be electrically conductive and have a higher band gap than active regions (23A) of the active zone; or ii. the opening ( 2R) has a network of interconnected separating trenches ( 2T), such that the opening is implemented in regions in a trench-like and contiguous manner, and the isolated active regions ( 23A) are each surrounded in lateral directions by the deactivated regions ( 23D, 23E).Device (10) according to claim 1, wherein the locally deactivated regions (23D, 23E) are the ablated and re-grown regions (23E) of the active zone (23).Component (10) according to Claim 1 or 2, in which the locally deactivated regions (23D, 23E) are the regions (23D) of the active zone (23) implanted or diffused in with impurities or with impurity ions.The device (10) according to any one of the preceding claims, wherein the active zone (23) comprises active regions (23A) configured to generate electromagnetic radiation, wherein the first contact structure (41) is free from overlapping with the active regions of the active zone in plan view.Component (10) according to one of the preceding claims having the feature ii of claim 1, according to which - the opening (2R) has a network of interconnected separating trenches (2T), such that the opening is implemented in regions in a trench-like and contiguous manner, and - the isolated active regions (23A) are each surrounded in lateral directions by the deactivated regions (23D, 23E).Component (10) according to one of Claims 1 to 4, having the feature i of Claim 1, in that the locally deactivated regions (23D, 23E) are furthermore of electrically conductive design and have a higher band gap than active regions (23A) of the active zone.Component (10) according to one of the preceding claims, comprising a second contact structure (42) for electrically contacting the second semiconductor layer (22), wherein the second contact structure is arranged in the vertical direction between the carrier (1) and the semiconductor body (2) and overlaps in plan view with the inner deactivated region (23D, 23E) of the active zone (23).The device (10) of any of claims 1 to 7, wherein each singulated active region (23A) is associated with an outer deactivated region (23D, 23E) of the active zone (23), wherein the outer deactivated region laterally surrounds the associated singulated active region.Component (10) according to one of the preceding claims, in which the first contact structure (41) is designed in the form of a through-connection (40) which is arranged within the opening (2R), wherein, for the electrical contacting of the first semiconductor layer (21), the through-connection extends through the second semiconductor layer (22) and the active zone (23).Component (10) according to one of Claims 1 to 8, in which the first contact structure (41) is arranged on a surface of the semiconductor body (2) facing away from the carrier (1) and directly adjoins the first semiconductor layer (21).Component (10) according to one of the preceding claims, in which the intermediate layer (3) is a continuous, electrically conductive layer (32), wherein the intermediate layer is configured exclusively for electrically contacting the second semiconductor layer (22) of the semiconductor body (2).Component (10) according to one of Claims 1 to 10, in which the intermediate layer (3) has a first sublayer (31) for electrically contacting the first semiconductor layer (21) and a second sublayer (32) for electrically contacting the second semiconductor layer (22), wherein the first sublayer and the second sublayer are laterally spaced apart and are free of overlap in plan view.Component (10) according to one of Claims 1 to 10, in which the intermediate layer (3) has a first sublayer (31) for electrically contacting the first semiconductor layer (21) and a second sublayer (32) for electrically contacting the second semiconductor layer (22), wherein the first sublayer and the second sublayer are arranged one above the other in the vertical direction and are electrically insulated from one another by insulation structures.Device (10) according to one of the preceding claims, wherein the active zone (23) comprises locally deactivated regions (23D) and active regions (23A) along lateral directions, wherein - the deactivated regions and the active regions are based on the same semiconductor material, and - the deactivated regions comprise implanted or diffused-in impurities or impurity ions compared to the active regions, whereby the deactivated regions have a higher band gap than the active regions.The device (10) according to any one of claims 1 to 13, wherein the active zone comprises the locally deactivated regions (23E) and active regions (23A) along lateral directions, wherein - the locally deactivated regions are locally ablated and re-grown regions, - the deactivated regions and the active regions differ from each other in material composition, and - the deactivated regions and the second semiconductor layer are based on the same semiconductor material.Method for producing a component (10) having a carrier (1), a semiconductor body (2) arranged on the carrier, an intermediate layer (3, 31, 32) arranged at least in regions between the carrier and the semiconductor body, and a first contact structure (41), in which - the semiconductor body has a first semiconductor layer (21), a second semiconductor layer (22) and an active zone (23), which is arranged between the semiconductor layers (21, 22) in the vertical direction and is configured to generate electromagnetic radiation, - the semiconductor body has an opening (2R), which extends through the second semiconductor layer and the active zone towards the first semiconductor layer and is partly filled with a material of the intermediate layer, - the first contact structure is configured to electrically contact the first semiconductor layer and overlaps the opening in plan view, - the active zone is deactivated in regions along lateral directions, such that the active zone has locally deactivated regions (23D, 23E) which are not configured to generate electromagnetic radiation, and - the opening is different from the deactivated regions of the active zone, - the active zone (23) is divided into a plurality of singulated active regions (23A), wherein each singulated active region (23A) is assigned an inner deactivated region (23D, 23E) and the inner deactivated region is laterally surrounded partially or fully by the associated singulated active region, wherein the component to be produced has at least one of the following additional features, according to which: i. the locally deactivated regions (23D, 23E) are furthermore designed to be electrically conductive and have a higher band gap than active regions (23A) of the active zone; or ii. the opening ( 2R) has a network of interconnected separating trenches ( 2T), such that the opening is implemented in regions in a trench-like and contiguous manner, the isolated active regions ( 23A) are each surrounded in lateral directions by the deactivated regions ( 23D, 23E).Method according to Claim 16, in which, in order to produce the deactivated regions (23D), the active zone (23) is deactivated in regions along lateral directions by ion implantation.Method according to Claim 16, in which, in order to produce the deactivated regions (23D), the active zone (23) is deactivated in regions along lateral directions by diffusion of impurity atoms or impurity ions.Method according to Claim 16, in which, in order to produce the deactivated regions (23E), the active zone (23) is locally ablated and the locally ablated regions (23E) are subsequently re-grown with a material of the second semiconductor layer (22).The device (10) of any of claims 1 to 15, comprising both the additional feature i and the additional feature ii.

Images