MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Abstract

Manufacturing process for a semiconductor device (100) comprising the following: a first process of forming on a first surface of a conductor frame (102) of a first region (301) and a second region (302) which surrounds an outer perimeter of the first region (301) and has a relatively lower liquid deposition and spreadability of solder (106) than the first region (301); a second process of applying the solder (106) in the first area (301) of the ladder frame (102) and a third process of pressing a semiconductor element (105) against the solder (106) applied in the first area (301) to apply the solder (106) in liquid form and distribute it into the second area (302).

Description

Technical field

[0001] The present invention relates to a manufacturing process for a semiconductor device and a semiconductor device. Technical background

[0002] The size of semiconductor elements is reduced, and it is necessary to prevent the formation of voids in the solder at the solder joint of the semiconductor elements in order to maintain heat dissipation and short-circuit resistance.

[0003] PTL 1 describes a technique of liquid application and distribution of molten solder in a state in which it is blocked, to the outside of a frame-like superimposition section in processes for creating a recessed area defined by the superimposition section opposite a semiconductor element on a surface of a conductor frame, blocking the supplied molten solder by the superimposition section and installing the semiconductor element.

[0004] PTL 2 describes a semiconductor device comprising a semiconductor component and a conductor frame. The conductor frame includes: a bonding part to which the semiconductor component is bonded via solder; a first outflow prevention part; and a second outflow prevention part. The first outflow prevention part is annular, continuously surrounding the entire circumference of the bonding part, and is formed as a groove that is cut deeper than an outer surface of the bonding part. The second outflow prevention part is annular, surrounding the first outflow prevention part, and is formed as a groove that is cut deeper than the outer surface of the bonding part.

[0005] PTL 3 describes a resin-sealed semiconductor device. A coating film for the solder joint is formed on the conductor frame, an IC chip is loaded and secured by solder onto a chip loading area of ​​an inner conductor, and the IC chip and the conductor frame are sealed with a cast resin.

[0006] PTL 4 describes a semiconductor device comprising a semiconductor chip and an island to which the semiconductor chip is bonded via die-bonding material. The island has a die-bonding area to which the semiconductor chip is bonded; in an outer circumference of the die-bonding area, a groove is formed along at least a portion of the outer circumference of the die-bonding area such that it passes through the vicinity of each angle of the die-bonding area; and the die-bonding material is arranged between the entire area of ​​the back face of the semiconductor chip and the die-bonding area. List of prior art patent literature PTL 1: JP 2015- 109 294 A PTL 2: JP 2014- 203 947 A PTL 3: JP 2006- 303 216 A PTL 4: JP 2011- 155 286 A Summary of the invention

[0007] Technical Problem: The technique described in PTL 1 could not sufficiently prevent the formation of voids in the solder and solder overflow. Solution to the problem

[0008] A manufacturing process for a semiconductor device according to the present invention comprises the following: a first process of forming on a first surface of a conductor frame a first region and a second region, which surrounds an outer circumference of the first region and has a relatively lower liquid deposition and spreadability of solder than the first region; a second process of applying the solder in the first region of the conductor frame; and a third process of pressing a semiconductor element against the solder applied in the first region to liquid-deposit the solder and spread it into the second region.

[0009] A semiconductor device according to the present invention comprises: a semiconductor element; a conductor frame comprising a first surface having a first region and a second region surrounding an outer perimeter of the first region and exhibiting a relatively lower liquid deposition and spreadability of solder than the first region; and solder which, in a state in which it is liquid-deposited and spread over the first region and the second region of the conductor frame, forms a connection between the semiconductor element and the conductor frame, wherein an outer perimeter edge of a connection region of the solder on the conductor frame side substantially coincides with an outer perimeter edge of the second region. Advantageous effects of the invention

[0010] According to the present invention, it is possible to prevent the formation of cavities and plumb line overflow. Brief description of the drawings [ Fig. 1] Fig. Figure 1 is a perspective exploded view of a semiconductor device. [ Fig. 2] Fig. Figure 2 is a perspective exploded view of a main part of the semiconductor device. [ Fig. 3] Fig. Figure 3 is a perspective view of a ladder frame. [ Fig. 4] Fig. Figure 4 is a view that explains a first process of a manufacturing procedure for the semiconductor device. [ Fig. 5] Fig. Figures 5(A) and (B) are views illustrating a second process of the manufacturing procedure for the semiconductor device. [ Fig. 6] Fig. Figures 6(A) and (B) are views illustrating a third process of the manufacturing procedure for the semiconductor device. [ Fig. 7] Fig. 7(A), Fig. 7(B) and Fig. Figure 7(C) are views illustrating hatching examples 1, 2 and 3 of the ladder frame. [ Fig. 8] Fig. 8(A), Fig. 8(B) and Fig. Figure 8(C) are views illustrating hatching examples 4, 5 and 6 of the ladder frame. [ Fig. 9] Fig. 9(A), Fig. 9(B) and Fig. Figure 9(C) are views illustrating hatching examples 7, 8 and 9 of the ladder frame. [ Fig. 10] Fig. 10(A), Fig. 10(B) and Fig. Figure 10(C) are views illustrating hatching examples 10, 11 and 12 of the ladder frame. [ Fig. 11] Fig. 11(A), Fig. 11(B) and Fig. 11(C) are views illustrating the application and distribution of liquid by means of a hatching example 13 of the ladder frame. Description of the embodiments

[0011] One embodiment of the present invention is described below with reference to the drawings. The following description and drawings illustrate the present invention and are omitted and simplified as appropriate for a clearer description. The present invention can also be carried out in various other forms. Unless otherwise specified, each component can be present singly or multiple times.

[0012] To facilitate understanding of the invention, the position, size, shape, area, and the like of each component illustrated in the drawings do not necessarily represent the actual position, size, shape, area, and the like. Therefore, the present invention is not necessarily limited to the position, size, shape, area, and the like disclosed in the drawings.

[0013] Fig. Figure 1 is a perspective exploded view of a semiconductor device 100 according to the present embodiment.

[0014] As in Fig. As illustrated in Figure 1, the semiconductor device 100 contains inside casting resin 101 for sealing a semiconductor element 105 (see Figure 1). Fig. 2) Both surfaces of the casting resin 101 are provided with a conductor frame 102, which is connected to the semiconductor element 105 by solder 106 (see Fig. 2) Several connection terminals 103, which are electrically connected to the semiconductor element 105, protrude from the upper part of the casting resin 101. An insulating plate 104 is arranged on both surfaces of the conductor frame 102.

[0015] After the insulating plate 104 has been connected to both surfaces of the conductor frame 102, the semiconductor device 100 is housed in the casing 201 and sealed with resin. Both surfaces of the casing 201 are provided with several heat dissipation fins 202, and a refrigerant, not shown, flows between the heat dissipation fins 202 to cool heat generated by the semiconductor element 105.

[0016] Fig. Figure 2 is a perspective exploded view of a main part of the semiconductor device 100.

[0017] In Fig. Figure 2 does not illustrate the casting resin 101. The present embodiment describes an example in which an insulated-gate bipolar transistor (IGBT) and a diode chip are provided as the semiconductor element 105. It should be noted that the semiconductor element 105 is not limited to the IGBT and can be a MOSFET or a SiC. Fig. Figure 2 illustrates an example in which an IGBT and a diode are arranged in a branch, however any number of semiconductor elements 105 can be mounted.

[0018] As in Fig. As illustrated in Figure 2, the semiconductor element 105 is connected to the conductor frame 102 at both its surfaces by means of the solder 106. The present embodiment is characterized by a connection between the semiconductor element 105 and the conductor frame 102 by means of the solder 106, as will be described later.

[0019] Fig. Figure 3 is a perspective view of the ladder frame 102.

[0020] As in Fig. As illustrated in Figure 3, the conductor frame 102 is provided with a region containing a first region 301 and a second region 302, which corresponds to a semiconductor element 105. That is, the first surface of the conductor frame 102 is provided with the first region 301 and the second region 302, which surrounds the outer perimeter of the first region 301 and exhibits a relatively lower liquid deposition and spreadability of the solder 106 than the first region 301. Fig. Figure 3 illustrates four areas, each containing the first area 301 and the second area 302. Each area corresponds to two IGBTs and two diode chips as the semiconductor element 105. <Erster Prozess: Herstellungsverfahren für eine Halbleitervorrichtung 100>

[0021] The first process of the manufacturing procedure for the semiconductor device 100 is described. Fig. Figure 4 is a front view of the ladder frame 102.

[0022] The conductor frame 102 is made of copper (Cu). The conductor frame 102 is surface-treated with nickel palladium (NiPd) or a nickel plating. To separate the first area 301 and the second area 302 from each other, the surface of the conductor frame 102 can be subjected to a baking treatment or the like beforehand to remove any moisture or the like.

[0023] If the conductor frame 102 is surface-treated with nickel-palladium, the second area 302 is subjected to laser processing. That is, the second area 302 is irradiated with a laser to remove the palladium (Pd) from the surface, thereby exposing the nickel surface (Ni surface). This prevents the liquid deposition and distribution of solder 106 to the second area 302.

[0024] If the conductor frame 102 has a nickel plating, the first area 301 is subjected to laser processing. That is, the first area 301 is irradiated with a laser to flatten the roughened nickel surface or to expose copper of a base metal. This facilitates the liquid application of the solder 106 in the first area 301.

[0025] In the first process, as illustrated in an example described below, various hatching patterns are applied using laser processing to create a section where the solder 106 is likely to be liquid-applied and spread, and a section where it is unlikely to be liquid-applied and spread. This determines the manner in which the solder 106 is liquid-applied and spread, the direction in which it flows, and its flow rate. That is, in the first process, the first surface of the conductor frame is covered with the first area 301 and the second area 302, which surrounds the outer perimeter of the first area 301 and exhibits a relatively lower liquid applicability and spreadability of the solder 106 than the first area 301.Specifically, the first region 301 and / or the second region 302 are hatched by laser processing such that the second region 302 exhibits a relatively low liquid deposition and spreadability of the solder 106. The density, interval, and direction of the hatching of the first region 301 and the second region 302 are selected based on the relative difference between the liquid deposition and spreadability of the solder 106 at the surface and the liquid deposition and spreadability of the solder 106, which has undergone laser processing, at the surface. It should be noted that if the outer perimeter of the first region 301 is framed by laser processing or the like, the solder 106 simply remains within the first region 301.

[0026] The advantages of being able to simply apply and spread the lot 106 in liquid form in the first area 301 are described.

[0027] When the solder 106 is applied to the conductor frame 102 using a solder transfer tool 401, which will be described later, the quantity of solder 106 to be transferred to the conductor frame 102 is stabilized by adjusting the first area 301 to a level that exhibits good liquid application and distribution. Specifically, the solder 106 is easily separated from the solder transfer tool 401, and the quantity of solder 106 is stabilized. The solder 106 is then uniformly applied and distributed in a liquid state over the entire inner surface of the first area 301. The same applies if the solder 106 is applied dropwise using a syringe.

[0028] Then, if the solder 106 is applied and spread in liquid form in the first region 301, and then the solder 106 is applied and spread in liquid form in the second region 302, the solder in the second region 302 can be applied and spread uniformly in liquid form, and air entrapment is prevented when the solder 106 is applied and spread in liquid form in the second region 302. The solder 106, which has been applied and spread in liquid form in the second region 302, simultaneously reaches the four sides of an outer circumferential edge 303 of the second region 302, thus preventing the solder 106 from being locally squeezed. Therefore, the solder 106 hardly overflows from the outer circumferential edge 303. The outer circumferential edge 303 of the second region 302 forms a barrier on the surface through oxidation or the like. The shape of the outer circumferential edge 303 can be concave or convex with respect to the surface. This prevents the perpendicular 106 from overflowing from the perpendicular area (the first area 301 and the second area 302). <Zweiter Prozess: Herstellungsverfahren für eine Halbleitervorrichtung 100>

[0029] The second process of the manufacturing process for the semiconductor device 100 is a process of applying the solder 106 in the first area 301 of the conductor frame 102.

[0030] Fig. 5(A) and Fig. 5(B) are views that explain the second process. Fig. Figure 5(A) illustrates a state immediately before the solder 106 is transferred from the solder transfer tool 401 to the conductor frame 102. Fig. Figure 5(B) illustrates a state immediately after the solder 106 has been transferred from the solder transfer tool 401 to the conductor frame 102.

[0031] First, the solder transfer tool 401 is immersed in a solder bath and the solder 106 is attached to the solder transfer tool 401, as shown in Fig. Figure 5(A) illustrates this. The solder transfer tool 401 is then positioned opposite the central part of the first section 301 of the conductor frame 102. The shape of the solder transfer tool 401 is arbitrary and can be a rectangle (a round chamfer may be provided) or a circle.

[0032] Next, as in Fig. As illustrated in Figure 5(B), the solder transfer tool 401, to which the solder 106 is attached, is moved downwards, and the solder 106 is transferred to the central part of the first area 301. The solder 106 is applied in a liquid form and distributed to the first area 301. To apply the solder 106 in a liquid form and distribute it to the first area 301, the solder transfer tool 401 can be moved vertically and horizontally in parallel as the solder 106 is transferred through the solder transfer tool 401.

[0033] The first region 301 is an area where the solder 106 exhibits relatively better fluid deposition and spreadability than in the second region 302. This causes the solder 106 to temporarily remain in a narrow area to increase its curvature. The solder 106 remaining in the first region 301 is held in a state of high curvature. At this point, the curvature of the solder 106 remaining in the first region 301 is preferably as high as possible. This is because, in the next third process, the solder 106 and the semiconductor element 105 are desirablely in point contact at a vertex of the solder 106.

[0034] Even if the solder 106 flows out of the first region 301, it can maintain its curvature as long as it does not spread over the entire second region 302. In the next, third process, the solder 106 can be squeezed while releasing air, which is expected to have a void-reducing effect. When the solder 106 is squeezed by means of the semiconductor element 105, it spans the boundary between the first region 301 and the second region 302. It is only necessary to maintain its curvature, even if the solder 106 does not spread over the entire first region 301. <Dritter Prozess: Herstellungsverfahren für eine Halbleitervorrichtung 100>

[0035] The third process of the manufacturing process for the semiconductor device 100 is a process of pressing the semiconductor element 105 against the solder 106 that has been applied in the first area 301 in order to apply the solder 106 in liquid form and distribute it to the second area 302.

[0036] Fig. 6(A) and Fig. 6(B) are views that explain the third process. Fig. Figure 6(A) illustrates a state in which the semiconductor element 105, which is sucked in by a chip suction clamp 501, is positioned at the apex of the solder 106. Fig. Figure 6(B) illustrates a state in which the semiconductor element 105 is pushed through the chip suction clamping socket 501 to apply the solder 106 in liquid form and distribute it to the second area 302.

[0037] As in Fig. Figure 6(A) illustrates this, as the solder 106, which temporarily remains in the first region 301, is in a state of high curvature, with the apex of the solder 106 in point contact with the semiconductor element 105. Subsequently, the solder 106 is gradually applied and spread in liquid form from the central part to the circumferential part and from the first region 301 to the second region 302, while the semiconductor element 105 is pressed against the solder 106. At this stage, because the solder 106 is applied and spread in liquid form while releasing air, the formation of voids can be suppressed.

[0038] As in Fig. As illustrated in Figure 6(B), the semiconductor element 105 is connected to the conductor frame 102 in the first region 301 and the second region 302 by means of solder 106. The solder 106, which was applied and spread in liquid form in the second region 302, remains at the outer circumferential edge 303 and does not overflow. In the second region 302, because it is less likely that the solder 106 will be applied and spread in liquid form, flow of the solder 106 is inhibited and overflow is less likely.

[0039] The semiconductor device 100, fabricated by the process described above, comprises the semiconductor element 105, the conductor frame 102, and the solder 106. The conductor frame 102 is provided with the first region 301 and the second region 302. The second region 302 surrounds the outer perimeter of the first region 301 and exhibits a relatively lower liquid deposition and spreadability of the solder 106 than the first region 301. The solder 106 joins the semiconductor element 105 and the conductor frame 102 in a state where it is liquid and spread over the first region 301 and the second region 302 of the conductor frame 102. The outer perimeter edge of the joining region of the solder 106 on the side of the conductor frame 102 substantially coincides with the outer perimeter edge 303 of the second region 302. The outer circumferential edge 303 of the second area is a third area that controls the liquid application and distribution of the solder 106.

[0040] Next, an example of hatching by laser processing, applied to the first area 301 or the second area 302 of the conductor frame 102 in the first process described above, is described. As described above, a section where the solder 106 is likely to be applied and distributed in liquid form, and a section where it is unlikely that the solder 106 will be applied and distributed in liquid form, are formed by hatching, making it possible to determine the manner in which the solder 106 is applied and distributed in liquid form, the direction in which the solder 106 flows, and a flow rate.

[0041] In the following Examples 1 to 13, a case is described in which the conductor frame 102 is surface-treated with nickel palladium. If the conductor frame 102 is surface-treated with nickel plating, the hatching in the first region 301 and the second region 302 is the opposite of that in Examples 1 to 13 in the nickel palladium case. In Examples 1 to 13 of each hatching, the first region 301 and the second region 302 can be combined. Examples 1 to 13 of each hatching are described only on the side of the conductor frame 102 corresponding to the IGBT; however, a hatching on the side of the conductor frame 102 corresponding to the diode is formed similarly. In this case, the side of the conductor frame 102 corresponding to the IGBT and the side of the conductor frame 102 corresponding to the diode need not be hatched identically. (Hatching example 1 of the ladder frame 102)

[0042] Fig. Figure 7(A) is a view illustrating hatching example 1 of the ladder frame 102. In this example 1, the outer perimeter shape of the first region 301 and the outer perimeter shape of the second region 302 are formed to be similar to each other. This similarity ensures that the distance of the liquid application and distribution from the outer perimeter of the first region 301 to the outer perimeter of the second region remains constant, and the plumb line 106 reaches the outer perimeter edge 303 simultaneously. Therefore, it is less likely that the plumb line 106 will locally overflow from the outer perimeter edge 303. A round chamfer can be provided at the corner sections of the outer perimeter portion and the outer perimeter edge 303 of the first region 301 to inhibit the plumb line 106 from overflowing at the corner sections. (Hatching example 2 of the ladder frame 102)

[0043] Fig. Figure 7(B) is a view illustrating hatching example 2 of the ladder frame 102. In this example 2, the outer circumferential shape of the first region 301 is circular. Due to the circular shape, the surface tension of the solder 106 remaining in the first region 301 is stabilized, the curvature of the solder 106 can be maintained, and the solder 106 simply remains in the first region 301. (Hatching example 3 of ladder frame 102)

[0044] Fig. Figure 7(C) is a view illustrating hatching example 3 of the conductor frame 102. In this example 3, the outer circumferential shape of the first region 301 is formed in an elliptical shape. Due to the elliptical shape, the surface tension of the solder 106 remaining in the first region 301 is stabilized, the curvature of the solder 106 can be maintained, and the solder 106 simply remains in the first region 301. Furthermore, if the semiconductor element 105 has a rectangular shape, by forming the principal axis of the elliptical shape in the y-direction in the figure in accordance with the long side direction (the y-direction in the figure), the solder 106 can be applied and distributed uniformly in a liquid state. (Hatching example 4 of ladder frame 102)

[0045] Fig. Figure 8(A) is a view illustrating hatching example 4 of the ladder frame 102. In this example 4, the boundary between the first region 301 and the second region 302 is formed as a dotted or dashed line. To align the direction of liquid application and spreadability, the second region 302 is hatched with a straight line in the x-direction in the figure.

[0046] Even if the boundary between the first region 301 and the second region 302 is a dotted or dashed line, the solder 106 remains temporarily in the first region 301 due to the surface tension of the solder 106. When the solder 106 is squeezed through the semiconductor element 105, the solder 106 simply flows to the second region 302, thus preventing the solder 106 from being locally liquid-deposited from the first region 301. (Hatching example 5 of ladder frame 102)

[0047] Fig. Figure 8(B) is a view illustrating hatching example 5 of the ladder frame 102. In this example 5, the boundary between the first region 301 and the second region 302 is formed as a dotted or dashed line. The second region 302 is hatched with a dashed or dotted line in the x-direction in the figure to control the fluidity and spreadability and to change the direction.

[0048] Similar to Example 4, even if the boundary between the first region 301 and the second region 302 is a dotted or dashed line, the solder 106 remains temporarily in the first region 301 due to its surface tension. When the solder 106 is squeezed through the semiconductor element 105, it simply flows to the second region 302, preventing the solder 106 from being locally liquid-deposited from the first region 301. By hatching the second region 302 with a dashed or dotted line, it is possible to control the liquid deposition and spreadability of the solder 106 and define its direction. (Hatching example 6 of ladder frame 102)

[0049] Fig. Figure 8(C) is a view illustrating hatching example 6 of the ladder frame 102. In this example 6, a hatch pattern is formed radially from the center of the first area 301 by laser processing. In this case, the hatch density is changed between the first area 301 and the second area 302. In this example 6, the hatch density is increased in the second area 302.

[0050] With a radially formed hatching pattern, the solder 106 is applied and distributed radially and smoothly in liquid form from the center of the first region 301. By increasing the hatching density of the second region 302, the solder 106 initially remains in the first region 301 and is then, when the solder 106 is squeezed through the semiconductor element 105, applied in liquid form and distributed to the second region 302. (Hatching example 7 of ladder frame 102)

[0051] Fig. Figure 9(A) is a view illustrating hatching example 7 of the ladder frame 102. In this example 7, hatching is formed radially from the center of the first area 301 by laser processing. The second area 302 is hatched by laser processing forming several similar rectilinear shapes similar to the outer shape (a quadrilateral) of the second area 302.

[0052] The plumb line 106 is applied and distributed in the first area 301 by radial hatching, however the second area 302 is hatched in a square shape to inhibit the flowability of the plumb line 106 and to prevent the plumb line 106 from overflowing from the outer circumferential edge 303. (Hatching example 8 of ladder frame 102)

[0053] Fig. Figure 9(B) is a view illustrating hatching example 8 of the ladder frame 102. In this example 8, the outer circumference of the first region 301 is formed in a curved shape. To align the direction of liquid application and spreadability in the second region 302, straight hatching is carried out in the x-direction in the figure.

[0054] Due to the curved shape with the protruding four corners of the first area 301, the liquid solder 106 is applied and spreads from the first area 301 to the four corners of the second area 302. The first area 301, which is formed in a curved shape, makes it possible to control the position at which the liquid solder 106 is applied and spread, and to reduce shrinkage voids at the perimeter of the solder 106. (Hatching example 9 of ladder frame 102)

[0055] Fig. Figure 9(C) is a view illustrating hatching example 9 of the ladder frame 102. In this example 9, the first area 301 and the second area 302 are hatched by laser processing, forming several similar rectilinear shapes similar to the outer shape (the quadrilateral). The hatching density is then changed between the first area 301 and the second area 302. In this example 9, the hatching density in the second area 302 is increased.

[0056] Since the hatching density in the first area 301 is lower than in the second area 302, the plumb line 106 is applied and spreads smoothly. Conversely, because the second area 302 has a high-density hatching pattern in a quadrilateral shape, the flowability of the plumb line 106 is reduced, preventing it from overflowing from the outer perimeter edge 303. By changing the density of the first area 301 and the second area 302, it is possible to define the type of application and spread, as well as the flowability. (Hatching example 10 of ladder frame 102)

[0057] Fig. Figure 10(A) is a view illustrating hatching example 10 of the ladder frame 102. In this example 10, the first area 301 and the second area 302 are hatched by laser processing, forming a grid in the xy direction (horizontal and vertical lineforms). The hatch density is then changed between the first area 301 and the second area 302. In this example 10, the hatch density in the second area 302 is increased.

[0058] Since the hatching density in the first area 301 is lower than in the second area 302, the plumb line 106 is applied and spread smoothly in the first area 301. Conversely, because the second area 302 has a high-density hatching pattern in a quadrilateral configuration, the flowability of the plumb line 106 is inhibited, preventing it from overflowing from the outer perimeter edge 303. By changing the density of the first area 301 and the second area 302, it is possible to define the type of application and spreadability, as well as the flowability. The hatching grid is not limited to the xy direction and can, for example, be a grid rotated by 45° relative to the xy direction. (Hatching example 11 of ladder frame 102)

[0059] Fig. Figure 10(B) is a view illustrating hatching example 11 of the ladder frame 102. In this example 11, the second area 302 is subdivided into four areas, each containing one of the four corners, and each area is hatched by laser processing with a combination of the x-direction +45° / -45°. In each area, the hatching direction is towards each of the four corners of the second area 302.

[0060] The plumb line 106 can be applied smoothly and distributed to each of the four corners in the second area 302, thus reducing shrinkage voids at the perimeter of the plumb line 106. It should be noted that a similar hatching pattern can also be applied to the first area 301. In this case, the hatching density in the second area 302 is increased. (Hatching example 12 of ladder frame 102)

[0061] Fig. Figure 10(C) is a view illustrating hatching example 12 of the ladder frame 102. In this example 12, hatching is applied to the second area 302 by laser processing in a vertical line shape, which is the y-direction.

[0062] If the semiconductor element 105 has a rectangular shape, the solder 106 can be applied in liquid form and spread in the y-direction by creating hatching in the y-direction in accordance with the long side direction (the y-direction in the figure). It should be noted that hatching in a horizontal line shape, which is the x-direction, can also be applied. In this case, the solder 106 can be applied uniformly in liquid form and spread in the x-direction. (Hatching example 13 of ladder frame 102)

[0063] Fig. 11(A) to Fig. Figure 11(C) shows views illustrating the application and distribution of the solder 106 on the hatched ladder frame 102.

[0064] The hatching, which in Fig. 11(A) to Fig. Figure 11(C) illustrates this as an example. When hatching the first area 301, the first area 301 is subdivided into four areas, each containing one of the four corners, and each area is hatched by laser processing with a combination of the x-direction +45° / -45°. Furthermore, band-shaped areas are created in the x-direction and the y-direction, and the area in the x-direction is hatched by laser processing in both directions. Additionally, in the central part of the first area 301, the central part is subdivided into four areas, each containing one of the four corners, and each area is hatched by laser processing with a combination of the x-direction +45° / -45°. The second area 302 is hatched by laser processing forming several similar rectilinear shapes similar to the outer shape (the quadrilateral).

[0065] Fig. Figure 11(A) illustrates a state in which the perpendicular 106 is arranged in the central part of the first region 301. As in Fig. As illustrated in Figure 11(A), when the solder 106 of the solder transfer tool 401 comes into contact with the central part of the first area 301, the solder 106 is applied and distributed in liquid form, while being spread in the xy direction and the ±45° direction by a hatching applied to the first area 301.

[0066] Fig. Figure 11(B) illustrates a state in which the solder 106 is applied and spread in liquid form in the first area 301. As in Fig. As illustrated in Figure 11(B), the plumb line 106 runs in the xy direction along a line hatched in the xy direction in the figure, applied in a liquid manner, and the plumb line 106 spreads along a line hatched in the ±45° direction with respect to the xy direction (arrow B in the figure) and applied in a liquid manner, and the plumb line 106 spreads to the entire first area 301.

[0067] Fig. Figure 11(C) illustrates a state in which the solder 106 is liquid-applied and spread by pressing the semiconductor element 105. As in Fig.As illustrated in Figure 11(C), the solder 106 flows over from the first region 301 when the semiconductor element 105 presses against it. At this point, the quadrilateral hatching in the second region 302 prevents the liquid from being applied and spread in the outer circumferential direction, making it difficult for the solder 106 to flow. The outer circumferential edge 303 then blocks the solder 106 to prevent it from overflowing.

[0068] According to the embodiment described above, the following functional effects can be obtained. (1) The manufacturing process for the semiconductor device 100 includes the following: The first process involves forming the solder 106 on the first surface of the conductor frame 102 of the first region 301 and the second region 302, which surrounds an outer perimeter of the first region 301 and exhibits a relatively lower liquid deposition and spreadability than the first region 301; the second process involves applying the solder 106 to the first region 301 of the conductor frame 102; and the third process involves pressing the semiconductor element 105 against the solder 106 applied to the first region 301 to liquid-deposit the solder 106 and spread it to the second region 302. This prevents the formation of voids and solder overflow. (2) The semiconductor device 100 comprises the following: the semiconductor element 105; the conductor frame 102, which contains the first surface provided with the first region 301 and the second region 302, which surrounds the outer perimeter of the first region 301 and has a relatively lower liquid deposition and spreadability of the solder 106 than the first region 301; and the solder 106, which, in a state in which it is liquid-deposited and spread over the first region 301 and the second region 302 of the conductor frame 102, forms a connection between the semiconductor element 105 and the conductor frame 102, wherein the outer periphery edge of a connection region of the solder 106 on the side of the conductor frame 102 substantially coincides with the outer periphery edge 303 of the second region 302.

[0069] This prevents the formation of cavities and plumb line overflow. Reference symbol list 100 semiconductor devices 101 Casting resin 102 ladder frames 103 Connection port 104 Insulation board 105 Semiconductor element 106 Lot 201 cases 202 Heat dissipation fin 301 First Area 302 Second Section 303 Outer circumferential edge 401 Solder Transfer Tool 501 Chipans

Claims

[1] Manufacturing process for a semiconductor device (100) comprising the following: a first process of forming on a first surface of a conductor frame (102) of a first region (301) and a second region (302) which surrounds an outer perimeter of the first region (301) and has a relatively lower liquid deposition and spreadability of solder (106) than the first region (301); a second process of applying the solder (106) in the first area (301) of the ladder frame (102) and a third process of pressing a semiconductor element (105) against the solder (106) applied in the first area (301) to apply the solder (106) in liquid form and distribute it into the second area (302). [2] Manufacturing method for a semiconductor device (100) according to claim 1, wherein in the first process the first area (301) and / or the second area (302) are formed by laser processing. [3] Manufacturing process for a semiconductor device (100) according to claim 2, wherein in the first process the second area (302) is formed by laser processing on the conductor frame (102) on which a surface treatment with nickel palladium is formed on the first surface. [4] Manufacturing method for a semiconductor device (100) according to claim 2, wherein in the first process the first area (301) is formed by laser processing on the conductor frame (102) on which a surface treatment with a nickel plating is formed on the first surface. [5] Manufacturing method for a semiconductor device (100) according to claim 2, wherein in the first process an outer circumferential shape of the first region (301) and an outer circumferential shape of the second region (302) are formed such that they are similar to each other. [6] Manufacturing method for a semiconductor device (100) according to claim 2, wherein in the first process an outer circumferential shape of the first region (301) is formed in a circular or elliptical shape. [7] Manufacturing method for a semiconductor device (100) according to claim 2, wherein in the first process an outer circumferential shape of the first region (301) is formed in a curved shape. [8] Manufacturing method for a semiconductor device (100) according to claim 2, wherein in the first process a boundary between the first region (301) and the second region (302) is formed as a dotted line or a dashed line. [9] Manufacturing method for a semiconductor device (100) according to claim 2, wherein in the first process the first area (301) and the second area (302) are formed by applying a hatching pattern by laser processing. [10] Manufacturing method for a semiconductor device (100) according to claim 9, wherein in the first process the density of the hatching is changed by laser processing between the first area (301) and the second area (302). [11] Manufacturing method for a semiconductor device (100) according to claim 9, wherein in the first process the hatching is formed radially from a center of the first area (301) by laser processing. [12] Manufacturing method for a semiconductor device (100) according to claim 9, wherein in the first process the hatching is formed by laser processing in a horizontal line shape and / or a vertical line shape. [13] Manufacturing method for a semiconductor device (100) according to claim 9, wherein in the first process the hatching is formed by laser processing in a similar rectilinear shape which is similar to an outer shape of the second area (302). [14] Semiconductor device (100) comprising the following: a semiconductor element (105); a conductor frame (102) which includes a first surface which is provided with a first area (301) and a second area (302) which surrounds an outer perimeter of the first area (301) and has a relatively lower liquid deposition and spreadability of solder (106) than the first area (301), and Solder (106), which in a state in which it is applied in liquid form and distributed over the first region (301) and the second region (302) of the conductor frame (102), establishes a connection between the semiconductor element (105) and the conductor frame (102), wherein an outer circumferential edge (303) of a connection area of ​​the plumb line (106) on the conductor frame side substantially coincides with an outer circumferential edge (303) of the second area (302). [15] Semiconductor device (100) according to claim 14, wherein an outer circumferential edge (303) of the second region (302) is a third region that controls the liquid application and distribution of the solder (106).

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