GAS PHASE SEPARATION DEVICE

Abstract

A gas phase deposition device (1) which uses an annular support (C) which supports a wafer (WF) for forming a CVD layer on the wafer (WF), wherein the gas phase deposition device (1) has a lock chamber (13) which is provided with a holder (17) for supporting the support (C), and the support (C) and the holder (17) are provided with a correction mechanism which corrects a position of the support (C) in the direction of rotation along a circumferential direction of the wafer (WF), wherein the holder (17) supports at least two supports (C) vertically and the correction mechanism is not provided on the holder at the greatest height.

Description

FIELD OF THE INVENTIONThe present invention relates to a vapor deposition apparatus used in the production of epitaxial wafers, for example.BACKGROUND OF THE INVENTIONIn a lock chamber of a multi-chamber processing system for depositing a layer onto a substrate, the use of a positioning mechanism such as an alignment ring and an alignment pin for aligning a position of the substrate with respect to a carrier transferring the substrate is known from US 9 929 029 B2.JP 2002-75 869 A discloses a vapor deposition apparatus having a correction mechanism for a support. US 2006 / 0 285 945 A1 discloses a wafer processing device having a plurality of chambers.SUMMARY OF THE INVENTIONProblems to be Solved by the InventionWhen the vapor deposition apparatus is viewed in a plan view, the positioning mechanism aligns with a position based on the position of the carrier in the vertical direction as well as the left and right direction with respect to the substrate (wafer), but does not correct the position of the wafer in a rotational direction. When the carrier has a shape that periodically changes in the rotational direction of the wafer, for depositing a uniform film on the wafer, the position of the carrier in the rotational direction is not aligned with respect to the wafer, which adversely affects the quality of a processed wafer. In the above conventional technology, nothing is disclosed about the correction of a position of the carrier in the rotational direction with respect to the wafer when the vapor deposition apparatus is viewed in plan view.The present invention seeks to solve the problem of providing a vapor deposition apparatus that can correct a positional offset of the carrier in the rotational direction with respect to the wafer when the vapor deposition apparatus is viewed in plan view.Means for Solving the ProblemThe present invention is a vapor deposition apparatus using an annular support supporting the wafer for forming a CVD layer on the wafer, the vapor deposition apparatus has a lock chamber provided with a holder for supporting the support, and the support and the holder are provided with a correction mechanism that corrects the position of the support in the rotational direction along a circumferential direction of the wafer.In the present invention, the correction mechanism particularly preferably includes a pair of correction mechanisms for controlling clockwise and counterclockwise rotation of the carrier.In the present invention, the correction mechanism particularly preferably includes a correction mechanism that corrects the position of the carrier in the vertical direction as well as in the left and right direction when the device is viewed in a plan view.In the present invention, in a first and a second aspect, the correction mechanism includes a first engagement part provided on the carrier and a second engagement part provided on the holder.In the present invention, in the first aspect, the second engagement part includes an engagement surface that engages with the first engagement part, a rotation surface that rotates the carrier relative to the holder, and a positioning surface that determines a correction position of the carrier relative to the holder.In the present invention, in the second aspect, the first engagement part includes an engagement surface that engages with the second engagement part, a rotation surface that rotates the carrier relative to the holder, and a positioning surface that determines a correction position of the carrier relative to the holder.In the present invention, it is particularly preferable that the engagement surface and the rotation surface are configured to be on the same plane.According to the invention, the holder supports at least two supports vertically, and the correction mechanism is not provided on a holder at the highest height.In the present invention, the CVD layer is particularly preferably an epitaxial silicon layer.In the present invention, more preferably, a plurality of pretreatment wafers are transferred in this order from a wafer storage container through an operation interface, a gate chamber and a wafer transfer chamber to a reaction chamber forming the CVD film on the wafer; a plurality of pretreatment wafers are also transferred in this order from the reaction chamber, through the wafer transfer chamber, gate chamber and operation interface to the wafer storage container; the gate chamber communicates with the operation interface through a first door and also communicates with the wafer transfer chamber through a second door; the wafer transfer chamber communicates with the reaction chamber through a gate valve; the wafer transfer chamber is provided with a first robot that deposits a pretreatment wafer transferred into the lock chamber into the reaction chamber in a state where the pretreatment wafer is supported by the support, and also pulls out the aftertreatment wafer from the reaction chamber in a state where the pretreatment wafer is supported by the support, and transfers the wafer to the lock chamber in a post-treatment wafer for which the treatment has ended in the reaction chamber; the operation interface is provided with a second robot that extracts the pretreatment wafer from the wafer storage container and supports the wafer with the carrier provided in the lock chamber and also stores the post-treatment wafer supported by the carrier, which has been transported to the lock chamber, in the wafer storage container; and the lock chamber is provided with a holder for supporting the carrier.Effect of the inventionAccording to the present invention, in the holder for supporting the carrier, when the vapor deposition apparatus is viewed in a plan view, the position of the carrier in the rotational direction along the circumferential direction of the wafer is corrected. Accordingly, a positional offset of the carrier in the rotational direction with respect to the wafer can be corrected.BRIEF DESCRIPTION OF THE DRAWINGS[FIG. 1 ] is a block diagram illustrating a vapor deposition apparatus according to an embodiment of the present invention.[FIG. 2A ] is a plan view illustrating an exemplary carrier and first engagement part provided on the carrier according to the embodiment of the present invention.[FIG. 2B ] is a vertical cross-sectional view of the carrier in FIG. 2A including a wafer and a susceptor of a reaction furnace in the vapor deposition apparatus of FIG. 1.[FIG. 3A ] is a plan view illustrating another exemplary carrier and first engagement part provided on the carrier according to the embodiment of the present invention.[FIG. 3B ] is a vertical cross-sectional view of the carrier in FIG. 3A including the wafer and the susceptor of the reaction furnace in the vapor deposition apparatus of FIG. 1.[FIG. 4 ] is a plan view and vertical cross-sectional views illustrating a transfer protocol for the wafer and carrier in a reaction chamber in the vapor deposition apparatus of FIG. 1.[FIG. 5A ] is a plan view illustrating an exemplary holder provided on a lock chamber in the vapor deposition apparatus of FIG. 1.[FIG. 5B ] is a vertical cross-sectional view of the holder in FIG. 5A including the wafer and the carrier in the vapor deposition apparatus of FIG. 1.[FIG. 5C ] FIG. 5C(A) is a plan view illustrating a second engaging part provided on the carrier in FIG. 5A, and FIG. 5C(B) is a vertical cross-sectional view.[FIG. 6A ] is a plan view illustrating another exemplary holder provided on the lock chamber in the vapor deposition apparatus of FIG. 1.[FIG. 6B ] is a vertical cross-sectional view of the holder in FIG. 6A including the wafer and the carrier in the vapor deposition apparatus of FIG. 1.[FIG. 7 ] is a plan view and vertical cross-sectional views illustrating the transfer protocol for the wafer and carrier in the lock chamber in the vapor deposition apparatus of FIG. 1.[FIG. 8 ] FIG. 8A is a plan view illustrating an exemplary first blade attached to a distal end of a first robot hand in the vapor deposition apparatus of FIG. 1, and FIG. 8B is a vertical cross-sectional view of the first blade including the carrier and the wafer in the vapor deposition apparatus of FIG. 1.[FIG. 9A ] is a plan view illustrating the carrier and the holder when the carrier supporting the wafer in FIG. 2A is attached to the holder in FIG. 5A.[FIG. 9B ] is a plan view illustrating the carrier and the holder when the carrier supporting the wafer in FIG. 3A is attached to the holder in FIG. 6A.[FIG. 10 ] is a plan view (FIG. 10A ) and a vertical cross-sectional view (FIG. 10B ) illustrating another exemplary second engaging part provided on the holder in the lock chamber in the vapor deposition apparatus 1 of FIG. 1.[FIG. 11 ] is a plan view (FIG. 11A ) and a vertical cross-sectional view (FIG. 11B ) illustrating an example position correction of the carrier in a rotational direction using the first engagement part and the second engagement part illustrated in FIG. 2A (No. 1).[FIG. 12] A plan view (FIG. 12A ) and a vertical cross-sectional view (FIG. 12B ) illustrating an example position correction of the carrier in the rotational direction using the first engagement part of the carrier illustrated in FIG. 2A and the second engagement part in FIG. 10 (NO. 2 ).[FIG. 13 ] is a plan view (FIG. 13A ) and a vertical cross-sectional view (FIG. 13B ) illustrating an exemplary position correction of the carrier in the rotational direction using the first engagement part of the carrier illustrated in FIG. 2A and the second engagement part in FIG. 10 (NO. 3 ).[FIG. 14 ] is a plan view illustrating still another exemplary first engagement part provided on the carrier according to the embodiment of the present invention.[FIG. 15 ] is a plan view (FIG. 15A ) and a vertical cross-sectional view (FIG. 15B ) illustrating another example position correction of the carrier in the rotational direction using the first engagement part of the carrier illustrated in FIG. 14 and the second engagement part corresponding to the first engagement part (No. 1).[FIG. 16 ] is a plan view (FIG. 16A ) and a vertical cross-sectional view (FIG. 16B ) illustrating another example position correction of the carrier in the rotational direction using the first engagement part of the carrier illustrated in FIG. 14 and the second engagement part corresponding to the first engagement part (No. 2).[FIG. 17 ] is a plan view (FIG. 17A ) and a vertical cross-sectional view (FIG. 17B ) illustrating another example position correction of the carrier in the rotational direction using the first engagement part of the carrier illustrated in FIG. 14 and the second engagement part corresponding to the first engagement part (No. 3).[FIG. 18A ] is a diagram (No. 1) illustrating a handling protocol for the wafer and the carrier in the vapor deposition apparatus of FIG. 1.[FIG. 18B ] is a diagram (No. 2) illustrating the handling protocol for the wafer and the carrier in the vapor deposition apparatus of FIG. 1.[FIG. 18C ] is a diagram (No. 3) illustrating the handling protocol for the wafer and the carrier in the vapor deposition apparatus of FIG. 1.[FIG. 18D ] is a diagram (No. 4) illustrating the handling protocol for the wafer and the carrier in the vapor deposition apparatus of FIG. 1.MODE OF CARRYING OUT THE INVENTIONHereinafter, an embodiment of the present invention will be described with reference to the drawings. A vapor deposition apparatus 1 is an apparatus (i.e., CVD apparatus) for supplying a simple gas or one or more compound gases composed of elements configuring a thin film material to a wafer WF and forming a desired thin film by a chemical reaction in a vapor phase or on a surface of the wafer WF. FIG. 1 is a block diagram in plan view illustrating a vapor deposition apparatus 1 according to the embodiment of the present invention. The vapor deposition apparatus 1 of the present embodiment is provided with a pair of reaction furnaces 11, 11, a wafer transfer chamber 12, a pair of lock chambers 13, an operation interface 14, a loading port on which a wafer storage container 15 (cassette case) in which a plurality of the wafers WF are stored is provided, and an integrated controller 16 that integrates the controller of the entire vapor deposition apparatus 1.The reaction furnace 11 is an apparatus for forming a CVD film (for example, silicon epitaxial film) on a surface of a wafer WF such as a single crystal silicon wafer using the CVD method. The reaction furnace 11 includes a reaction chamber 111 that performs the chemical reaction forming a CVD film; a susceptor 112 on which the wafer WF is placed and rotated in the reaction chamber 111; a gas supplier 113 that supplies hydrogen gas and raw material gas to the reaction chamber 111 to form the CVD layer; and a gate valve 114 for securing airtightness of the reaction chamber 111. Moreover, although omitted from the drawings, a heating lamp for raising the temperature of the wafer WF to a predetermined temperature is provided at the periphery of the reaction chamber 111. The activation and deactivation of the heating lamp are controlled by a command signal from the integrated controller 16. FIG. 1 shows the vapor deposition apparatus 1 provided with the pair of reaction furnaces 11, 11, but the number of reaction furnaces is not particularly limited: one reaction furnace or three or more reaction furnaces may be provided.The reaction chamber 111 is a chamber provided for blocking outside air and maintaining an atmosphere in performing the chemical reaction forming the CVD film. The chamber for the reaction chamber 111 is not particularly limited.The susceptor 112 is a supporting body of the wafer WF for placing and heating the wafer WF. In the vapor deposition apparatus 1 of the present embodiment, the susceptor 112 is provided inside the reaction chamber 111 and places and rotates the wafer WF. By rotating the susceptor 112, a non-uniform CVD film can be prevented from forming on the surface of the wafer WF. The material of the susceptor is not particularly limited, but examples include silicon carbide (SiC) coated carbon (C), ceramics such as SiC and SiO 2 and glassy carbon. The driving of the susceptor 112 including rotation and stopping is controlled by a command signal from the integrated controller 16.The gas supply device 113 is a device that supplies gas such as hydrogen gas or raw material gas required for the chemical reaction for forming the CVD layer to the reaction chamber 111. When the CVD layer is a silicon epitaxial layer, a gas such as dichlorosilane (SiH 2 Cl 2) and trichlorosilane (SiHCl 3) may be supplied. A method for supplying the gas is not particularly limited, and a known supply system may be used. The gas supplied from the gas supplier 113 to the reaction chamber 111 is replaced with a hydrogen gas supplied from the gas supplier 113 after the reaction. The replaced post-reaction gas is purified by a scrubber (dust collecting scrubber) connected to an outlet port provided on the reaction chamber 111 and then discharged to the outside of the system. Although detailed illustration is omitted, this type of scrubber may use, for example, a conventionally known pressurized water scrubber. The supply and stop of gas by the gas supply device 113, the operation of the washer, and the like are controlled by a command signal from the integrated controller 16.The gate valve 114 is a valve for partitioning the reaction chamber 111, the wafer transfer chamber 12, and the gate chamber 13 of the vapor deposition apparatus 1. By closing the gate valve 114, airtightness between the wafer transfer chamber 12 and the reaction chamber 111 is ensured. The opening and closing of the gate valve 114 is controlled by a command signal from the integrated controller 16.The wafer transfer chamber 12 is a sealed chamber for transporting the wafer WF from the lock chamber 13 to the reaction chamber 111 of the reaction furnace 11. The wafer transfer chamber 12 is located between the reaction chamber 111 of the reaction furnace 11 and the lock chamber 13. the reaction chamber 111 of the reaction furnace 11 and the lock chamber 13 communicate via the wafer transfer chamber 12. On the other hand, the other side of the wafer transfer chamber 12 is connected to the reaction chamber 111 via the gate valve 114 having an airtight seal to allow opening and closing.The wafer transfer chamber 12 includes a first robot 121 that handles the wafer WF. The first robot 121 transports the pre-treatment wafer WF from the gate chamber 13 to the reaction chamber 111 and transports the post-treatment wafer WF from the reaction chamber 111 to the gate chamber 13. the first robot 121 is controlled by a first robot controller 122, and a first blade 123 attached to a distal end of a robot hand slides along an operation trajectory taught above.The wafer transfer chamber 12 has an inert gas supply device, which is not shown in the drawings. Inert gas is supplied from the inert gas supply device, and the gas in the wafer transfer chamber 12 is replaced. The gas replaced with the inert gas is purified by the scrubber (dust collecting scrubber) connected to the outlet port, and then discharged to the outside of the system. Although detailed illustration is omitted, this type of washer may use, for example, a conventionally known pressurized water washer. The supply and stop of inert gas by the inert gas supply device, the operation of the washer, and the like are controlled by a command signal from the integrated controller 16.The lock chamber 13 serves as a space in which atmospheric gas exchange takes place between the wafer transfer chamber 12 configured to have an inert gas atmosphere and the operation interface 14 configured to have an air atmosphere. The lock chamber 13 is provided with a first door 131 having an airtight seal allowing opening and closing between the lock chamber 13 and the operation interface 14. On the other hand, the gate chamber 13 is provided with the second door 132 also having an airtight seal allowing opening and closing between the gate chamber 13 and the wafer transfer chamber 12. In other words, the operation interface 14 and the wafer transfer chamber 12 communicate via the lock chamber 13. At this time, the first door 131 and the second door 132 are closed, and the air gas of the lock chamber 13 is replaced with the inert gas to apply an inert gas atmosphere to the lock chamber 13. For the inert gas exchange, the lock chamber 13 includes an exhaust device that evacuates an interior of the lock chamber 13 to a negative pressure, and a supply device that supplies inert gas to the lock chamber 13.The operation interface 14 is a zone for transporting the wafer WF between the lock chamber 13 and the wafer storage container 15, and is configured to have the same air atmosphere as a clean room. The operation interface 14 includes a second robot 141 that handles the wafer WF. The second robot 141 extracts a pre-treatment wafer WF stored in the wafer storage container 15 and deposits the wafer WF in the gate chamber 13, and also stores a post-treatment wafer WF transported to the gate chamber 13 in the wafer storage container 15. The second blade 143 of the present embodiment is not particularly limited, and a known blade capable of transporting the wafer WF may be used.The wafer storage container 15 (cassette case) is a container for storing and transporting the wafer WF between apparatuses, and is placed in the same air atmosphere as a clean room. The loading port in which the wafer storage container 15 is mounted is a part of the vapor deposition apparatus 1 where the wafer storage container 15 (cassette case) is transferred to an external apparatus for loading and unloading the wafer storage container 15. The wafer storage container 15 and the loading port are not particularly limited.The integrated controller 16 integrates the control of the entire vapor deposition apparatus 1. the integrated controller 16 mutually sends and receives control signals to and from the first robot controller 122 and the second robot controller 142. When an operation command signal is sent from the integrated controller 16 to the first robot controller 122, the first robot controller 122 controls the operation of the first robot 121. An operation result of the first robot 121 is sent from the first robot controller 122 to the integrated controller 16. Accordingly, the integrated controller 16 recognizes an operation status of the first robot 121. Similarly, when an operation command signal is sent from the integrated controller 16 to the second robot controller 142, the second robot controller 142 controls the operation of the second robot 141. An operation result of the second robot 141 is sent from the second robot controller 142 to the integrated controller 16. Accordingly, the integrated controller 16 recognizes an operation status of the second robot 141.The vapor deposition apparatus 1 of the present embodiment controls, by the integrated controller 16, each operation of the gate valve 114 that separates the reaction chamber 111 of the reaction furnace 11 from the wafer transfer chamber, the first door 131 that separates the gate chamber 13 from the operation interface 14, the second door 132 that separates the wafer transfer chamber 12 from the gate chamber 13, the first robot 121 that handles the wafer WF in the wafer transfer chamber 112, and the second robot 141 that handles the wafer WF in the operation interface 14, and thereby the wafer WF is transported in this order, and the CVD film formation is performed in the vapor deposition apparatus 1.In the vapor deposition apparatus 1 of the present embodiment, when transporting a pretreatment wafer WF from the wafer storage container 15 to the reaction chamber 111 of the reaction furnace 11, for example, first the first door 131 and the second door 132 are closed to establish a state in which the lock chamber 13 has an inert gas atmosphere. Next, a wafer WF is extracted from the wafer storage container 15 using the second robot 141, the first door 131 is opened, and the wafer WF is transported to the lock chamber 13. Next, after the first door 131 is closed and the gate chamber 13 is restored to an inert gas atmosphere, the second door 132 is opened, and the wafer WF is transported to the wafer transfer chamber 12 using the first robot 121. Finally, the second door 132 is closed, and the gate valve 114 is opened, and the wafer WF that has been transferred to the wafer transfer chamber 12 is transferred to the reaction chamber 111 of the reaction furnace 11 using the first robot 121.In the vapor deposition apparatus 1 of the present embodiment, conversely, when the post-treatment wafer WF is transferred from the reaction chamber 111 of the reaction furnace 11 to the wafer storage container 15, the gate valve 114 is first opened, and the post-treatment wafer WF on which the CVD film is formed is extracted from the reaction chamber 111 of the reaction furnace 11 using the first robot 121, and the gate valve 114 is closed. Next, the second door 132 is opened, and the wafer WF in the wafer transfer chamber 12 is transported to the gate chamber 13 using the first robot 121. When the second door 132 is closed and the lock chamber 13 is restored to an inert gas atmosphere, the first door 131 is finally opened, and the wafer WF is stored in the wafer storage container 15 using the second robot 141.In the vapor deposition apparatus 1 of the present embodiment, when transporting the wafer WF between the reaction chamber 111 of the reaction furnace 11 and the lock chamber 13, an annular carrier C supporting the wafer WF is used. FIG. 2A is a plan view illustrating an exemplary carrier C of the present embodiment, and FIG. 2B is a vertical cross-sectional view of the carrier C of FIG. 2A as viewed in a front view including the wafer WF and the susceptor 112 of the reaction furnace 11.The carrier C according to the present embodiment is configured by a material such as silicon carbide coated carbon, ceramics such as SiC and SiO 2 and glassy carbon, and formed in a ring shape. The support C according to the present embodiment includes, for example, a lower surface C 11 that abuts on an upper surface of the susceptor 112 shown in FIG. 2B, an upper surface C 12 that contacts and supports the outer periphery of a back surface of the wafer WF, an outer peripheral wall surface C 13, and an inner peripheral wall surface C 14.When the vapor deposition apparatus 1 according to the present embodiment is viewed in a plan view, the carrier C according to the present embodiment is further provided with at least one correction mechanism that corrects the position of the carrier C in a rotation direction along a circumferential direction of the wafer WF. A first engagement part C 15 of FIG. 2A is an exemplary correction mechanism of the present embodiment. The first engagement part C 15 of FIG. 2A is a projection in a semi-elliptical shape provided on the outer circumferential wall surface C 13. The shape of the correction mechanism of the present embodiment is not limited to the projection in the semi-elliptical shape as shown in FIG. 2A, and may be, for example, a circular projection, a rectangular projection, or a convex shape. The position where the correction mechanism is provided on the carrier C of the present embodiment is not limited to the outer circumferential wall surface C 13 as shown in FIG. 2A, and may be, for example, the lower surface C 11 or the inner circumferential wall surface C 14.Moreover, FIG. 3A is a plan view illustrating another exemplary carrier C of the present embodiment, and FIG. 3B is a vertical sectional view of the carrier C of FIG. 3A as viewed in a front view including the wafer WF and the susceptor 112 of the reaction furnace 11. A first engaging part C15' of FIG. 3A is another example of the correction mechanism of the present embodiment, and is a circular notch provided on the outer circumferential wall surface C13. The shape of the correction mechanism of the present embodiment is not limited to the circular notch as shown in FIG. 3A, and may be, for example, an elliptical notch, a rectangular notch, a recess, or a groove shape. The position where the correction mechanism is provided on the carrier C of the present embodiment is not limited to the outer circumferential wall surface C 13 as shown in FIG. 3A, and may be, for example, the lower surface C 11 or the inner circumferential wall surface C 14.FIGS. 4A to 4E are a plan view and vertical sectional views in a vertical direction of a transfer protocol for the wafer WF and the carrier C in the reaction chamber 111. When the carrier C supporting the wafer WF is transferred into the reaction chamber 111 of the reaction furnace 11 in a state where the carrier C abuts on the first blade 123 of the first robot 121 as illustrated in the plan view of FIG. 4A, the wafer WF is transferred to above the susceptor 112 as illustrated in FIG. 4B. Next, the carrier C is temporarily raised by three or more carrier lifting pins 115 provided relative to the susceptor 112 so as to be vertically displaceable as illustrated in FIG. 4C, and the first blade 123 is retracted as illustrated in FIG. 4D. Then, by raising the susceptor 112 as illustrated in FIG. 4E, the carrier C is placed on the upper surface of the susceptor 112.Conversely, when the CVD film forming treatment in the reaction chamber 111 of the reaction furnace 11 ends and the treated wafer WF is extracted in a state mounted on the carrier C, from the state shown in FIG. 4E, the susceptor 112 is first lowered and supports the carrier C only with the carrier lifting pins 115 as shown in FIG. 4D. Next, the first blade 123 is advanced between the carrier C and the susceptor 112 as illustrated in FIG. 4C, and then the three carrier lifting pins 115 are lowered to place the carrier C on the first blade 123 as illustrated in FIG. 4B, and the hand of the first robot 121 is operated. In this way, the wafer WF that has finished the CVD film forming treatment can be extracted in a state mounted on the support C.In the vapor deposition apparatus 1 of the present embodiment, the wafer WF is transferred between the lock chamber 13 and the reaction chamber 111 in a state supported on the carrier C. In order to sequentially perform the CVD film forming treatment on the wafers WF in the vapor deposition apparatus 1, a post-treatment wafer WF needs to be removed from the carrier C, and a pre-treatment wafer WF needs to be placed on the carrier C. Therefore, a holder 17 is provided on the lock chamber 13.The holder 17 is a support body for supporting the carrier C at two vertical heights in the lock chamber 13. the wafer WF may be placed on the carrier C supported by the holder 17, as appropriate. In the vapor deposition apparatus 1 of the present embodiment, the wafer WF is transferred between the gate chamber 13 and the reaction chamber 111 in a state resting on the carrier C. Accordingly, the pretreatment wafer WF is placed on the carrier C supported by the holder 17 in the lock chamber 13. Moreover, the post-treatment wafer WF is removed from the carrier C supported by the holder 17 in the lock chamber 13.FIG. 5A is a plan view illustrating an exemplary holder 17 of the present embodiment provided on the lock chamber 13, and FIG. 5B is a vertical cross-sectional view of the holder 17 of FIG. 5A as viewed in a front view including the wafer WF and the carrier C. The holder 17 of the present embodiment includes a holder base 171, a first holder 172, a second holder 173, and wafer lifting pins 174.The holder base 171 is a base for supporting the holder 17. the holder base 171 is fixed to the lock chamber 13.The first holder 172 and the second holder 173 are support bodies for supporting the support C. The first holder 172 and the second holder 173 support two supports C at two vertical heights and are capable of vertically raising and lowering with respect to the holder base 171. The first holder 172 and the second holder 173 (in the plan view of FIG. 5A, the second holder 173 is hidden by the first holder 172, and therefore only the first holder 172 is shown) have projections for supporting the carrier C at four points. The number of points at which the first holder 172 and the second holder 173 support the carrier C is not particularly limited, and may be four points or more. One carrier C is placed on the first holder 172, and another carrier C is placed on the second holder 173. The carrier C resting on the second holder 173 is inserted into a gap between the first holder 172 and the second holder 173.The wafer lifting pin 174 is a supporting body for supporting the wafer WF. The wafer lifting pin 174 is capable of vertically lifting and lowering with respect to the holder base 171, and the wafer WF supported by the carrier C is vertically displaced with respect to the carrier C when the holder 17 is viewed in a front view. The holder 17 shown in FIG. 5A has three wafer lifting pins 174, but the number of the wafer lifting pins 174 is not particularly limited and may be four pins or more. The shape of the wafer lifting pin 174 is not particularly limited, and may be thicker or thinner than the pins illustrated in FIG. 5B. The shape of the foremost end of the wafer lifting pin 174 contacting the wafer WF may be rounder or sharper than the foremost end of the pins shown in Fig. 5B.When the vapor deposition apparatus 1 according to the present embodiment is viewed in plan view, the holder 17 according to the present embodiment is further provided with at least one correction mechanism that corrects the position of the carrier C in the rotational direction along the circumferential direction of the wafer. A second engaging part 177 of FIG. 5A is an exemplary correction mechanism of the present embodiment. The second engaging part 177 is a protrusion provided on a support body 175 of the first holder as illustrated in FIG. 5A. FIG. 5C(A) is a plan view and FIG. 5C(B) is a vertical cross-sectional view illustrating the second engagement part 177 of FIG. 5A. As shown in FIGS. 5C(A) and (B), the second engaging part 177 has a base 177 aand a protrusion 177 b. The base 177 ais cylindrical, and the protrusion 177 bis a cylindrical shape that is thinner than the base 177 aand has a round head. The shapes of the base 177 aand the protrusion 177 bare not limited to those shown in FIGS. 5C(A) and (B), and may be, for example, elliptical or rectangular. Moreover, the protrusion 177 bmay be integrated with the base 177 a.Moreover, the shape of the correction mechanism of the present embodiment is not limited to that shown in FIGS. 5C(A) and (B), and may be, for example, a convex, a recessed, or a groove shape. The number and positioning of the correction mechanism of the present embodiment such as the second engagement part 177 are not particularly limited as long as the position of the carrier C in the rotational direction can be determined when the carrier C is viewed in plan view. For example, FIG. 6A is a plan view illustrating another exemplary holder 17 of the present embodiment, and FIG. 6B is a vertical cross-sectional view of the holder 17 of FIG. 6A as viewed in a front view including the wafer WF and the carrier C. A second engaging part 177' of the holder 17 in FIG. 6A has the same shape as those shown in FIGS. 5C(A) and (B), but the positioning in FIG. 6A forms a substantially isosceles triangle, while the positioning in FIG. 5A forms a substantially trapezoidal shape when viewed in plan.In FIG. 5A, the second engaging part 177 is also provided on the first holder support body 175, but the second engaging part 177 may be provided on both the first holder support body 175 and the second holder support body 176, or only on the second holder support body 176. In a case where the correction mechanism of the present embodiment such as the second engagement part 177 is provided only on the support body 176 of the second holder, the positioning in the rotation direction is performed in plan view when the carrier C is placed on the second holder 173 located at the lower height of the holder. In this example, the first holder support body 175 and the second holder support body 176 are the support bodies that respectively support the first holder 172 and the second holder 173 and move vertically upward and downward with respect to the holder base 171 together with the first holder 172 and the second holder 173.The number of the correction mechanisms of the present embodiment, such as the first engagement parts C 15, C 15' and the second engagement parts 177, 177', is not particularly limited, but preferably at least two correction mechanisms are provided for regulating the rotation of the carrier C clockwise and counterclockwise along the circumferential direction of the wafer using a pair of correction mechanisms. Moreover, when the vapor deposition apparatus 1 is viewed in plan view, the correction mechanism according to the present embodiment preferably corrects the positioning of the carrier C in the vertical direction as well as in the leftward and rightward directions. This is because, when the position in the vertical, left and right directions and in the rotational direction can be corrected with a single correction mechanism, the number of correction mechanisms required for correcting the position of the carrier C may be limited.FIG. 7 is a plan view and vertical cross-sectional views of a transfer protocol for the wafer WF and the carrier C in the lock chamber 13, and show a protocol in which the pre-treatment wafer WF rests on the carrier C in a state in which the carrier C is supported by the first holder 172, as illustrated in FIG. 7B. In other words, the second robot 141 provided at the operation interface 14 loads a wafer WF stored in the wafer storage container 15 onto the second blade 143, and transports the wafer WF through the first door 131 of the lock chamber 13 to an upper part of the holder 17 as illustrated in FIG. 7B. Next, as illustrated in FIG. 7C, the three wafer lifting pins 174 are lifted with respect to the holder base 171 and temporarily hold the wafer WF upward, and the second blade 143 is retracted as shown in FIG. 7D. The three wafer lifting pins 174 are provided at positions not interfering with the second blade 143, as illustrated in the plan view of FIG. 7A. Next, as illustrated in FIGS. 7D and 7E, the three wafer lifting pins 174 are lowered, and the first holder 172 and the second holder 173 are lifted, whereby the wafer WF is placed on the carrier C.Conversely, when the post-processing wafer WF transferred to the lock chamber 13 is transferred to the wafer storage container 15 in a state resting on the carrier C, the three wafer lifting pins 174 are lifted as shown in FIG. 7D, and the first holder 172 and the second holder 173 are lowered from the state shown in FIG. 7E, the wafer WF is supported only by the wafer lifting pins 174, and the second blade 143 is advanced between the carrier C and the wafer WF as shown in FIG. 7C, after which the three wafer lifting pins 174 are lowered to load the wafer WF onto the second blade 143 as shown in FIG. 7B, and the hand of the second robot 141 is operated. In this way, the wafer WF for which the treatment has ended can be taken out of the carrier C and placed in the wafer storage container 15. In the state illustrated in FIG. 7E, the wafer WF for which the treatment has ended is transported to the first holder 172 in a state resting on the carrier C, but the wafer WF can be taken out of the carrier C and placed in the wafer storage container 15 with a similar protocol when the wafer WF is transported to the second holder 173.In the vapor deposition apparatus 1 of the present embodiment, the first blade 123 is attached to a distal end of the hand of the first robot 121. A first recess 124 is formed in the first blade 123 for transporting the empty carrier C or with the wafer WF placed thereon. In the vapor deposition apparatus 1 of the present embodiment, the first blade 123 and the first recess 124 have a shape of the correction mechanism such as the first engagement parts C 15, C 15' and the second engagement parts 177, 177' and a shape corresponding to the arrangement thereof.For example, FIG. 8A is a plan view illustrating an exemplary first blade 123, and as shown in FIG. 4A, is a plan view illustrating an exemplary first blade 123 for transporting the carrier C transported in FIG. 2A. FIG. 8B is a vertical cross-sectional view of the first blade 123 as viewed from a lateral direction including the carrier C and the wafer WF shown in FIG. 2A. The first blade 123 of the present embodiment has the first recess 124 formed on a surface of a main body having a plate-shaped strip shape, the first recess 124 having a shape corresponding to the outer circumferential wall surface C 13 and the first engagement part C 15 of the carrier C. The shape of the first recess 124 is formed slightly larger than the outer periphery of the outer peripheral wall surface C 13 and the first engaging part C 15 of the carrier C when viewed in plan view, so that the carrier C mates with the first recess 124 of the first blade 123. The first robot 121 places the carrier C in transporting the empty carrier C or with the wafer WF placed thereon into the first recess 124.The first engaging part C 15 and the second engaging part 177 of the present embodiment correct the position of the carrier C in the rotational direction along the circumferential direction of the wafer WF by engaging each other when the carrier C is placed on the holder 17. For example, the first engaging part C 15 of the carrier C illustrated in FIG. 2A corrects the position of the carrier C in the rotational direction by engaging with the second engaging part 177 of the holder 17 illustrated in FIG. 5A. 9A is a plan view of the carrier C and the holder 17 when the carrier C illustrated in FIG. 2A is placed on the holder 17 illustrated in FIG. 5A ; the first engaging part C 15 and the second engaging part 177 are engaged; and the position of the carrier C in the rotational direction is corrected. Moreover, when the carrier C is placed on the holder 17, for example, the first engaging part C15' of the carrier C shown in FIG. 3A corrects the position of the carrier C in the rotational direction along the circumferential direction of the wafer WF by engaging with the second engaging part 177' of the holder 17 shown in FIG. 6A. FIG. 9B is a plan view of the carrier C and the holder 17 when the carrier C shown in FIG. 3A is placed on the holder 17 shown in FIG. 6A ; the first engagement part C15' and the second engagement part 177' are engaged; and the position of the carrier C in the rotational direction is corrected.Further, in correcting the position of the carrier C in the rotational direction by engaging the first engaging part C 15 of the carrier C with the second engaging part 177 of the holder 17, the second engaging part 177 of the present embodiment preferably includes an engaging surface Fa that engages the first engaging part C 15, a rotating surface Fb that rotates the carrier C with respect to the holder 17, and a positioning surface Fc that determines a correction position of the carrier C with respect to the holder 17. By providing the engagement surface Fa and the rotation surface Fb, the carrier C can be guided to the positioning surface Fc when the first engagement part C 15 and the second engagement part 177 are loosely fitted, and the carrier C can be further prevented from shifting from the predetermined position.FIG. 10A is a plan view illustrating the second engagement part 177 of the present embodiment, and FIG. 17B is a vertical cross-sectional view. For example, as shown in FIG. 10B, the second engagement part 177 may provide the protrusion 177 bwith the engagement surface Fa and the rotation surface Fb and provide the positioning surface Fc on the upper surface of the base 177 a. The rotation surface Fb of the present embodiment preferably has such a size as to allow the carrier C to sufficiently rotate with respect to the holder 17 and correct the position in the rotation direction when the vapor deposition apparatus 1 is viewed in plan view. Moreover, when the second engagement part 177 of the present embodiment is viewed in a side view, an inclination of the rotation surface Fb preferably has an angle for the carrier C to be able to rotate with respect to the holder 17. An inclination α formed by the engagement surface Fa and the rotation surface Fb according to the present embodiment may be 105° to 165°, 120° to 150°, or 130° to 140°.FIGS. 11 to 13 show a positional relationship of the first engaging part C15 and the second engaging part 177 when the carrier C is placed on the holder 17, the first engaging part C15 of the carrier C shown in FIG. 2A is engaged with the second engaging part 177 shown in FIGS. 10A and B, and corrects the position of the carrier C in the rotational direction. FIGS. 11A, 12A, and 13A are plan views illustrating the carrier C shown in FIG. 2A and the second engagement part 177 shown in FIGS. 10A and B, and FIGS. 11B, 12B, and 13B are vertical cross-sectional views of the holder 17 as viewed in a front view.The carrier C is placed on the holder 17 by the first robot 121 to which the first blade 123 is attached. As illustrated in FIG. 5B, when the carrier C is placed on the holder 17, the carrier C approaches the holder 17 from above. Therefore, the first engaging part C 15 first engages with the engaging surface Fa of the second engaging part 177, for example, as illustrated in FIG. 11B. In FIG. 11B, the first engagement part C 15 is loosely fitted with the second engagement part 177, and even when the first engagement part C 15 is engaged with the engagement surface Fa of the second engagement part 177, the carrier C can be moved in the vertical direction. Further, even when the first engagement part C 15 is in contact with the engagement surface Fa of the second engagement part 177, the carrier C can be moved in the vertical direction by sliding the first engagement part C 15 on the engagement surface Fa.When the position of the carrier C is lowered, the first engagement surface C 15 passes the engagement surface Fa of the second engagement part 177 and engages with the rotation surface Fb of the second engagement part 177 as illustrated in FIG. 12B, for example. In FIG. 12B, the left side of the first engagement part C 15 is in contact with the rotation surface Fb of the second engagement part 177 disposed on the left side. The rotating surface Fb has an inclination, and the carrier C is slid downward while the left side end of the first engaging part C 15 slides along the inclination on the rotating surface Fb. At this time, the carrier C rotates in the direction of the arrow A (clockwise) in FIG. 12A. Upon rotation of the carrier C due to the inclination of the rotation surface Fb, the carrier C of the present embodiment can correct the position in the rotation direction.The left side end of the first engagement part C 15 moves along the rotation surface Fb, slides on the rotation surface Fb while being engaged with the second engagement part 177 disposed on the left side. Accordingly, the carrier C moves to the predetermined position while rotating in the direction of the arrow A in FIG. 13A. When the first engagement part C 15 passes the rotation surface Fb of the second engagement part 177 and the carrier C is placed on the holder 17, the carrier C of the present embodiment is placed on the positioning surface Fc that is the predetermined position of the carrier C, for example, as illustrated in FIGS. 13A and B.As shown in FIG. 10, the second engagement part 177 may be provided with the engagement surface Fa, the rotation surface Fb, and the positioning surface Fc, or a surface similar to these surfaces may be provided on the first engagement part C 15. For example, FIG. 14A is a bottom view of still another exemplary carrier C of the present embodiment, and FIG. 14B is a vertical cross-sectional view. The carrier C shown in Fig. 14A is provided with the first engaging part C15'. The first engagement part C15' has an engagement rotational surface Fa', the engagement surface Fa and the rotational surface Fb being configured in the same plane, and also has a positioning surface Fc'. In this way, in the correction mechanism according to the present embodiment, the engagement surface Fa and the rotation surface Fb can be configured on the same plane. Accordingly, the size of the correction mechanism with respect to the carrier C can be prevented from increasing.The engagement rotational surface Fa' of the present embodiment preferably has such a size that allows the carrier C to sufficiently rotate with respect to the holder 17 and corrects the position in the rotational direction when the vapor deposition apparatus 1 is viewed in a plan view. Moreover, when the carrier C of the present embodiment is viewed in a side view, an inclination of the engagement rotational surface Fa' is preferably at an angle at which the carrier C can rotate with respect to the holder 17. An inclination α' formed by the engagement rotational surface Fa' and the positioning surface Fc' according to the present embodiment may be, for example, 105° to 165°, 120° to 150°, or 130° to 140°.Figs. 15 to 17 show a positional relationship of the first engaging part C15' and a second engaging part 177" when the carrier C is placed on the holder 17, the first engaging part C15' of the carrier C shown in Fig. 14 engages with the second engaging part 177" having a shape corresponding to the first engaging part C15', and the position of the carrier C in the rotational direction is corrected. FIGS. 15A, 16A and 17A are bottom views illustrating the carrier C and the second engaging part 177" illustrated in FIG. 14, and FIGS. 15B, 16B and 17B are front views.The carrier C is placed on the holder 17 by the first robot 121 to which the first blade 123 is attached. As illustrated in FIG. 5B, when the carrier C is placed on the holder 17, the carrier C approaches the holder 17 from above. Therefore, the second engaging part 177" first engages the first engaging rotational surface Fa' on the left side of the first engaging part C15', as shown in FIGS. 15A and B, for example. In FIG. 15B, the second engaging part 177" is loosely fitted with the first engaging part C15', and even when engaged with the engaging rotational surface Fa' of the first engaging part C15', the carrier C can be moved in the vertical direction. Further, even when the second engaging part 177" is in contact with the engaging rotational surface Fa' of the first engaging part C15', the carrier C can be moved in the vertical direction by sliding the second engaging part 177" on the engaging rotational surface Fa'.In addition, in the first engagement part C15' of the carrier C according to the present embodiment, the engagement surface Fa and the rotation surface Fb are formed as the same engagement rotation surface Fa', and therefore, the carrier C starts to rotate when the first engagement part C15' is engaged with the second engagement part 177". For example, the carrier C is slid downward toward the holder in FIG. 15A, and thereby the second engaging part 177" slides on the engaging rotation surface Fa' on the left side of the first engaging part C15' as shown in FIG. 15B. By sliding the second engaging part 177" on the engaging rotational surface Fa', the carrier C starts to rotate in the direction of the arrow A' in Fig. 15A.When the position of the carrier C is lowered, for example, as shown in Fig. 16A, the second engaging portion 177" contacts the outer circumferential wall surface C13 of the carrier C, and thereby stops the rotation of the carrier C in the direction of the arrow A'. As shown in Fig. 16A, the carrier C, whose rotation has stopped in the direction of the arrow A', is moved downward by sliding the second engaging part 177" on the engaging rotating surface Fa', as shown in Fig. 16B, for example. The second engaging part 177" fits, as shown in Figs. 17A and B, for example, with the positioning surface Fc' once the second engaging part 177" has passed the engaging rotating surface Fa'. By fitting the second engaging part 177" to the positioning surface Fc', the carrier C is placed at a predetermined position of the holder 17.Next, a protocol for handling the carrier C and the wafer WF before the formation of the epitaxial film (hereinafter, simply referred to as "pretreatment") and after the formation of the epitaxial film (hereinafter, simply referred to as "post-treatment") in the vapor deposition apparatus 1 according to the present embodiment will be described. FIGS. 18A to 18D are schematic views showing a handling protocol for the wafer and the carrier in the vapor deposition apparatus of the present embodiment and corresponding to the wafer storage container 15, the lock chamber 13, and the reaction furnace 11 on one side in FIG. 1 ; a plurality of wafers W 1, W 2, W 3... (for example, 25 wafers in total) are stored in the wafer storage container 15, and processing is initiated in this order.Step S 0 in FIG. 18A shows a standby state from which treatment using the vapor deposition apparatus 1 is to start and in which the plurality of wafers W 1, W 2, W 3... (for example, 25 wafers in total) are stored in the wafer storage container 15, an empty carrier C 1 is supported by the first holder 172 of the lock chamber 13, an empty carrier C 2 is supported by the second holder 173, and an inert gas atmosphere is present in the lock chamber 13.In the next step S 1, the robot 141 loads the wafer W 1 stored in the wafer storage container 15 onto the second blade 143, opens the first door 131 of the gate chamber 13, and transfers the wafer W 1 to the carrier C 1 supported by the first holder 172. The protocol for this handover has been described with reference to Fig. 7.In the next step S 2, the first door 131 of the lock chamber 13 is closed, and in a state in which the second door 132 is also closed, the inside of the lock chamber 13 is again gas-exchanged to the inert gas atmosphere. Then, the second door 132 is opened, the carrier C 1 is loaded on the first blade 123 of the first robot 121, the gate 114 of the reaction furnace 11 is opened, and the carrier C 1 on which the wafer W 1 is mounted is transferred to the susceptor 112 through the gate 114. The protocol for this handover has been described with reference to Figure 4. In steps S 2 to S 4, the CVD film forming process is performed on the wafer W 1 in the reaction furnace 11.In other words, the carrier C 1 on which the pretreatment wafer W 1 is mounted is transferred to the susceptor 112 of the reaction chamber 111, and the gate valve 114 is closed, and after waiting for a predetermined period of time, the gas supplier 113 supplies hydrogen gas to the reaction chamber 111, thereby giving a hydrogen gas atmosphere to the reaction chamber 111. Next, the wafer W 1 in the reaction chamber 111 is heated to a predetermined temperature by the heating lamp, and a pretreatment such as etching or a heat treatment is performed as necessary, after which the gas supplier 113 supplies raw material gas or dopant gas under control of the flow volume and / or the supply time. Thereby, a CVD film is formed on the surface of the wafer W 1. After forming the CVD film, the gas supplier 113 supplies hydrogen gas to the reaction chamber 111 again, and the reaction chamber 111 is gas-exchanged to a hydrogen gas atmosphere, after which the protocol is ready for a predetermined period of time.While the reaction furnace 11 processes the wafer W 1 in steps S 2 to S 4 in this manner, the second robot 141 extracts the next wafer W 2 from the wafer storage container 15 and makes preparations for the next processing. Before that, in step S 3, in the present embodiment, the second door 132 of the lock chamber 13 is closed, and in a state where the first door 131 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the second door 132 is opened, the second carrier C supported by the second holder 173 is transferred to the first holder 172 by the first robot 121, and the second door 132 is closed. Subsequently, in step S 4, the second robot 141 loads the wafer W 2 stored in the wafer storage container 15 onto the second blade 143, the first door 131 is opened, and the wafer W 2 is transferred to the carrier C 2 supported by the first holder 172 of the lock chamber 13.In this way, in the present embodiment, step S 3 is added, and the pretreatment wafer WF stored in the wafer storage container 15 is attached to the first holder 172, which is the holder at the highest height of the holder 17 of the lock chamber 13. This is done for the following reasons. Specifically, as illustrated in step S 2, when the empty carrier C 2 on which the next wafer W 2 is to be mounted is supported by the second holder 173, after the wafer W 2 is mounted thereon, there is a possibility that the carrier C 1 on which the post-treatment wafer W 1 is mounted may be transferred to the first holder 172. The carrier C of the vapor deposition apparatus 1 according to the present embodiment is transported to the reaction chamber 111, and therefore the carrier C is a factor in particle generation, and when the carrier C 1 is supported over the pretreatment wafer W 2, dust may fall on the pretreatment wafer W 2. Therefore, step S 3 is added, and the empty carrier C 2 is transferred to the first holder 172, so that the pretreatment wafer WF is attached to the holder at the highest height (first holder 172) of the holder 17 of the lock chamber 13. When the correction mechanism of the present embodiment is provided on the first holder 172 located at the highest height of the holder 17, the position of the carrier C in the rotational direction is corrected when the carrier C is transferred from the second holder 173 to the first holder 172 in step S 3.In step S 5, the first door 131 of the lock chamber 13 is closed, and in a state where the second door 132 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the gate valve 114 of the reaction furnace 11 is opened, the first blade 123 of the first robot 121 is inserted into the reaction chamber 111 and is loaded with the carrier C 1 on which the post-treatment wafer W 1 is mounted, the carrier C 1 is retracted from the reaction chamber 111, and the gate valve 114 is closed, after which the second door 132 is opened and the carrier C 1 is transferred to the second holder 173 of the gate chamber 13. When the correction mechanism of the present embodiment is provided on the second holder 173 located at the lowest height of the holder 17, the position of the carrier C in the rotational direction is corrected when the carrier C is transferred from the reaction chamber 111 to the second holder 173 in step S 5. Subsequently, the carrier C 2 supported by the first holder 172 is loaded on the first blade 123 of the first robot 121, and as illustrated in step S 6, the gate valve 114 is opened, and the carrier C 2 on which the pretreatment wafer W 2 is mounted is transferred to the susceptor 112 of the reforming furnace 11 through the wafer transfer chamber 12.In steps S 6 to S 9, the CVD film forming process is performed on the wafer W 2 in the reaction furnace 11. In other words, the carrier C 2 on which the pretreatment wafer W 2 is mounted is transferred to the susceptor 112 of the reaction chamber 111, and the gate valve 114 is closed, and after waiting for a predetermined period of time, the gas supplier 113 supplies hydrogen gas to the reaction chamber 111, thereby giving a hydrogen gas atmosphere to the reaction chamber 111. Next, the wafer W 2 in the reaction chamber 111 is heated to a predetermined temperature by the heating lamp, and a pretreatment such as etching or a heat treatment is performed as necessary, after which the gas supplier 113 supplies raw material gas or dopant gas under control of the flow volume and / or the supply time. Thereby, a CVD film is formed on the surface of the wafer W 2. After forming the CVD film, the gas supplier 113 supplies hydrogen gas to the reaction chamber 111 again, and the reaction chamber 111 is gas-exchanged to a hydrogen gas atmosphere, after which the protocol is ready for a predetermined period of time.While the reaction furnace 11 processes the wafer W 2 in steps S 6 to S 9 in this manner, the second robot 141 stores the post-processing wafer W 1 in the wafer storage container 15 and also extracts the next wafer W 3 from the wafer storage container 15 and makes preparations for the next processing. In other words, in step S 7, the second door 132 of the lock chamber 13 is closed, and in a state where the first door 131 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the first door 131 is opened, the second robot 141 loads the post-treatment wafer W 1 from the carrier C 1 supported by the second holder 173 onto the second blade 143, and as illustrated in step S 8, the post-treatment wafer W 1 is stored in the wafer storage container 15. Subsequently, similarly to the above-described step S 3, in step S 8, the first door 131 of the lock chamber 13 is closed, and in a state where the second door 132 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the second door 132 is opened, and the carrier C 1 supported by the second holder 173 is transferred to the first holder 172 by the first robot 121. When the correction mechanism of the present embodiment is provided on the first holder 172 located at the highest height of the holder 17, the position of the carrier C in the rotational direction is corrected when the carrier C is transferred to the first holder 172 in step S 8.Subsequently, in step S 9, the second door 132 of the lock chamber 13 is closed, and in a state where the first door 131 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the second robot 141 loads the wafer W 3 stored in the wafer storage container 15 onto the second blade 143, and the first door 131 is opened as illustrated in step S 9, and the wafer W 3 is transferred to the carrier C 1 supported by the first holder 172 of the gate chamber 13.In step S 10, similarly to step S 5 described above, the first door 131 of the lock chamber 13 is closed, and in a state where the second door 132 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the gate valve 114 of the reaction furnace 11 is opened, the first blade 123 of the first robot 121 is inserted into the reaction chamber 111 and is loaded with the carrier C 2 on which the post-treatment wafer W 2 is mounted, and the gate valve 114 is closed, after which the second door 132 is opened and the carrier C 2 is transferred from the reaction chamber 111 to the second holder 173 of the gate chamber 13. Subsequently, the carrier C 1 supported by the first holder 172 is loaded on the first blade 123 of the first robot 121, and the carrier C 1 on which the pretreatment wafer W 3 is mounted is transferred to the susceptor 112 of the reaction furnace 11 through the wafer transfer chamber 12, as illustrated in step S 11.In step S 10, similarly to step S 7 described above, the second door 132 of the lock chamber 13 is closed, and in a state where the first door 131 is also closed, the inside of the lock chamber 13 is gas-exchanged to an inert gas atmosphere. Then, the first door 131 is opened, the second robot 141 loads the post-treatment wafer W 2 onto the second blade 143 from the carrier C 2 supported on the second holder 173, and as illustrated in step S 11, the post-treatment wafer W 2 is stored in the wafer storage container 15. Thereafter, the above steps are repeated until the treatment of all the pretreatment wafers WF stored in the wafer storage container 15 ends.As described above, the vapor deposition apparatus 1 according to the present embodiment can correct the positional offset of the carrier in the rotational direction with respect to the wafer by providing the carrier C and the holder 17 with a correction mechanism that corrects the position of the carrier C in the rotational direction along the circumferential direction of the wafer WF. In this case, by providing a pair of correction mechanisms that regulate rotation of the carrier C clockwise and counterclockwise, the positional offset of the carrier C in the rotational direction can be corrected even further. Moreover, when the vapor deposition apparatus 1 is viewed in plan view, the correction mechanism according to the present embodiment corrects the positioning of the carrier C in the vertical direction as well as the leftward and rightward direction, and thereby the number of correction mechanisms required for the correction of the position of the carrier C can be limited. Further, by not providing the holder 17 with the correction mechanism on the holder at the highest height and providing the correction mechanism at at least one of the heights from the second height from above and below, it can be avoided that the position of a carrier C whose position in the rotational direction has already been corrected by the correction mechanism on the holder at the highest height is corrected again.Moreover, the correction mechanism of the present embodiment can further correct the positional displacement of the carrier C in the rotational direction even further by accommodating the first engagement parts C 15, C 15' provided on the carrier C and the second engagement parts 177, 177', 177" provided on the holder 17. Further, by providing the engagement surface Fa at which the second engagement part 177 engages with the first engagement part C 15, the rotation surface Fb that rotates the carrier C with respect to the holder 17, and the positioning surface Fc that determines a correction position of the carrier C with respect to the holder 17, the carrier C can be guided to the positioning surface Fc when the first engagement part C 15 and the second engagement part 177 are loosely fitted together, and the carrier C can be corrected further before shifting from the predetermined position. Further, by providing the engagement rotational surface Fa' that rotates the carrier C with respect to the holder 17 by engaging the first engagement part C15' with the second engagement part 177" and the positioning surface Fc' that determines the correction position of the carrier C with respect to the holder 17, the carrier C can be guided to the positioning surface Fc' when the first engagement part C15' and the second engagement part 177" are loosely fitted together, and the carrier C can be corrected further before shifting from the predetermined position. In this case, the engagement surface Fa and the rotation surface Fb are configured as the engagement rotation surface Fa' on the same plane, and thereby the correction mechanism according to the present embodiment increases with respect to the substrate C and can suppress influences on the temperature of the substrate C and the quality of the formed CVD film.DESCRIPTION OF THE REFERENCE NUMERALS1 Vapor deposition apparatus 11 Reaction furnace 111 Reaction chamber 112 Susceptor 113 Gas supply apparatus 114 Gate valve 115 Carrier lifting pin 12 Wafer transfer chamber 121 First robot 122 First robot controller 123 First blade 124 First recess 13 Gate chamber 131 First door 132 Second door 14 Operation interface 141 Second robot 142 Second robot controller 143 Second blade 15 Wafer storage container 16 Integrated controller 17 Holder 171 Holder base 172 First holder 173 Second holder 174 Wafer lifting pin 175 First holder supporting body 176 Second holder supporting body 177, 177', 177" Second engaging part 177a Base 177b Projection Fa Engaging surface Fb Rotating surface Fc Positioning surface α Slope C Support C11 Lower surface C12 Upper surface C13 Outer peripheral wall surface C14 Inner peripheral wall surface C15, C15' First engaging part Fa' Engaging rotating surface Fc' Positioning surface α' Slope WF Wafer

Claims

A vapor deposition apparatus (1) using an annular support (C) supporting a wafer (WF) for forming a CVD layer on the wafer (WF), wherein the vapor deposition apparatus (1) has a lock chamber (13) provided with a holder (17) for supporting the support (C), and the support (C) and the holder (17) are provided with a correction mechanism that corrects a position of the support (C) in the rotational direction along a circumferential direction of the wafer (WF), wherein the holder (17) vertically supports at least two supports (C), and the correction mechanism is not provided on the holder at the largest height.The vapor deposition apparatus (1) according to claim 1, wherein the correction mechanism includes a pair of correction mechanisms for regulating clockwise and counter-clockwise rotation of the carrier (C).The vapor deposition apparatus (1) according to any one of claims 1 and 2, wherein the correction mechanism includes a correction mechanism that corrects a position of the support in the vertical direction as well as in the left and right direction when the apparatus is viewed in a plan view.A vapor deposition apparatus (1) using an annular support (C) supporting a wafer (WF) for forming a CVD layer on the wafer (WF), wherein the vapor deposition apparatus (1) has a lock chamber (13) provided with a holder (17) for supporting the support (C), and the support (C) and the holder (17) are provided with a correction mechanism that corrects a position of the support (C) in the rotational direction along a circumferential direction of the wafer (WF), wherein the correction mechanism has a first engagement part (C15, C15') provided on the support (C) and a second engagement part (177, 177', 177") provided on the holder (17), wherein the second engaging part (177, 177', 177") has an engaging surface (Fa) which engages with the first engaging part (C15, C15'), a rotating surface (Fb) which rotates the carrier (C) with respect to the holder (17), and a positioning surface (Fc) which determines a correction position of the carrier (C) with respect to the holder (17).A vapor deposition apparatus (1) using an annular support (C) supporting a wafer (WF) for forming a CVD layer on the wafer (WF), wherein the vapor deposition apparatus (1) has a lock chamber (13) provided with a holder (17) for supporting the support (C), and the support (C) and the holder (17) are provided with a correction mechanism that corrects a position of the support (C) in the rotational direction along a circumferential direction of the wafer (WF), wherein the correction mechanism has a first engagement part (C15, C15') provided on the support (C) and a second engagement part (177, 177', 177") provided on the holder (17), wherein the first engaging part (C15, C15') has an engaging surface (Fa) which engages with the second engaging part (177, 177', 177"), a rotating surface (Fb) which rotates the carrier (C) with respect to the holder (17), and a positioning surface (Fc) which determines a correction position of the carrier (C) with respect to the holder (17).The vapor deposition apparatus (1) according to any one of claims 4 and 5, wherein the engagement surface (Fa) and the rotation surface (Fb) are configured on the same plane.The vapor deposition apparatus (1) according to any one of claims 1 to 6, wherein the CVD layer is an epitaxial silicon layer.The vapor deposition apparatus (1) according to any one of claims 1 to 7, wherein a plurality of pretreatment wafers are transported in this order from a wafer storage container (15) through an operation interface (14), the lock chamber (13), and a wafer transfer chamber (12) to a reaction chamber (111) forming the CVD film on the wafer (WF); a plurality of pretreatment wafers are also transported in this order from the reaction chamber (111) through the wafer transfer chamber (12), the lock chamber (13), and the operation interface (14) to the wafer storage container (15); the lock chamber (13) communicates with the operation interface (14) through a first door (131), and also communicates with the wafer transfer chamber (12) through a second door (132), the wafer transfer chamber (12) communicates with the reaction chamber (111) via a gate valve (114), the wafer transfer chamber (12) is provided with a first robot (121), which deposits the pretreatment wafer transported into the gate chamber (13) into the reaction chamber (111) in a state in which the pretreatment wafer is supported by the carrier (C), and also, in the aftertreatment wafer for which the treatment in the reaction chamber (111) has ended, pulls out the aftertreatment wafer from the reaction chamber (111) in a state in which the aftertreatment wafer is supported by the carrier (C), and transports the aftertreatment wafer to the gate chamber (13), and the operation interface (14) is provided with a second robot (141), which extracts the pretreatment wafer from the wafer storage container (15) and supports the pretreatment wafer with the carrier (C) provided in the lock chamber (13), and also stores the post-treatment wafer, which has been transported to the lock chamber (13), supported by the carrier (C) in the wafer storage container (15).

Images