Light-emitting diode and light-emitting device

Abstract

Light-emitting diode (1) comprising: a semiconductor layer sequence (100), wherein the semiconductor layer sequence comprises, from bottom to top, a first semiconductor layer (110), a light-emitting layer (120) and a second semiconductor layer (130); a first electrode (201), wherein the first electrode is electrically connected to the first semiconductor layer (110); a second electrode (202), wherein the second electrode is electrically connected to the second semiconductor layer (130); wherein the first electrode (201) or the second electrode (202) comprises an electrode arrangement (200) and the electrode arrangement comprises a first metal layer (210), a second metal layer (220) and a third metal layer (230), wherein the first metal layer is electrically connected to the semiconductor layer sequence (100), wherein the second metal layer is provided above the first metal layer and the third metal layer is provided above the second metal layer;wherein the second metal layer (220) consists of a nickel-phosphorus alloy or a nickel-phosphorus compound, and wherein the phosphorus in the nickel is discontinuously or unevenly distributed in the second metal layer (220) in points or in segmented lines.

Claims

[1] Light-emitting diode (1), characterized by that it includes: a semiconductor layer sequence (100), wherein the semiconductor layer sequence comprises, from bottom to top, a first semiconductor layer (110), a light-emitting layer (120) and a second semiconductor layer (130); a first electrode (201), the first electrode being electrically connected to the first semiconductor layer (110); a second electrode (202), the second electrode being electrically connected to the second semiconductor layer (130); wherein the first electrode (201) or the second electrode (202) has an electrode arrangement (200) and the electrode arrangement comprises a first metal layer (210), a second metal layer (220) and a third metal layer (230), wherein the first metal layer is electrically connected to the semiconductor layer sequence (100), wherein the second metal layer is provided over the first metal layer and the third metal layer is provided over the second metal layer; wherein the second metal layer (220) consists of a nickel-phosphorus alloy or a nickel-phosphorus compound. [2] Light-emitting diode (1) according to claim 1, characterized by that the mass content of phosphorus in the second metal layer (220) is between 0.1% and 5%, or between 5% and 10%, or between 10% and 50%. [3] Light-emitting diode (1) according to claim 1, characterized bythat the thickness of the second metal layer (220) is between 1000Å and 5000Å, or between 5000Å and 10000Å. [4] Light-emitting diode (1) according to claim 1, characterized by that the first metal layer (210) comprises a material selected from chromium, aluminum, titanium, platinum, nickel or a group of one or more of these materials. [5] Light-emitting diode (1) according to claim 1, characterized by that the third metal layer (230) comprises a material selected from tin, gold, platinum, copper or a group of one or more of these materials. [6] Light-emitting diode (1) according to claim 1, characterized by that the third metal layer (230) has a thickness between 100 nm and 500 nm. [7] Light-emitting diode (1) according to claim 1, characterized by that the third metal layer (230) comprises a first platinum metal layer (231), wherein the first platinum metal layer has a thickness between 50 nm and 300 nm. [8] Light-emitting diode (1) according to claim 1, characterized by that the phosphorus in the nickel in the second metal layer (220) is distributed discontinuously or unevenly, in points or in segmented lines. [9] Light-emitting diode (1) according to claim 1, characterized by that the nickel in the nickel-phosphorus alloy is present in a continuous layer structure. [10] Light-emitting diode (1) according to claim 1, characterized by that a second platinum metal layer (240) is provided between the first metal layer (210) and the second metal layer (220), wherein the second platinum metal layer has a thickness between 50 nm and 200 nm. [11] Light-emitting diode (1), characterized by that it includes: a semiconductor layer sequence (100), wherein the semiconductor layer sequence comprises, from bottom to top, a first semiconductor layer (110), a light-emitting layer (120) and a second semiconductor layer (130); a first electrode (201), the first electrode being electrically connected to the first semiconductor layer (110); a second electrode (202), the second electrode being electrically connected to the second semiconductor layer (130); wherein the first electrode (201) or the second electrode (202) has an electrode arrangement (200) and the electrode arrangement comprises a first metal layer (210), a second metal layer (220) and a third metal layer (230), wherein the first metal layer (210) is electrically connected to the semiconductor layer sequence (100), the second metal layer (220) is provided over the first metal layer (210) and the third metal layer (230) is provided over the second metal layer; wherein the second metal layer (220) includes a passivation layer of nickel or a nickel alloy, the passivation layer serving to inhibit bonding of the second metal layer to the external solder. [12] Light-emitting diode (1) according to claim 11, characterized by that the passivation layer contains a nickel-phosphorus alloy or a nickel-phosphorus compound. [13] Light-emitting device (2), characterized by that it includes: encapsulated bonding electrode (400) and light-emitting diode (1), wherein the light-emitting diode comprises a semiconductor layer sequence (100), a first electrode (201) and a second electrode (202), wherein the semiconductor layer sequence is electrically connected to the encapsulated bonding electrode via the first electrode and the second electrode; wherein the first electrode (201) or the second electrode (202) comprises an electrode arrangement (200) comprising: a first metal layer (210); a second metal layer (220), the second metal layer being provided over the first metal layer; and a third metal layer (230), the third metal layer being provided over the second metal layer; wherein the second metal layer (220) comprises a bonding layer (221), wherein the second metal layer (220) or the third metal layer (230) comprises an intermetallic bonding layer (222), wherein the bonding layer (221) is bonded to the first metal layer (210), wherein the intermetallic bonding layer (222) contains a nickel-phosphorus alloy or a nickel-phosphorus compound, wherein the bonding layer (221) contains nickel, and wherein the intermetallic bonding layer (222) has a thickness between 1 and 3 µm or between 3 and 5 µm. [14] Light-emitting device (2) according to claim 13, characterized bythat the mass content of phosphorus in the intermetallic compound layer (222) is in a ratio between 0.1% and 50%.

Images