Precious metal vapor deposition material

Abstract

An object of the present disclosure is to provide a noble metal vapor deposition material for use in a vacuum vapor deposition process capable of suppressing the occurrence of the bumping phenomenon during vacuum vapor deposition. A vapor deposition material consisting of a noble metal is provided, wherein, when analyzing a 50 µm x 50 µm surface of the vapor deposition material by energy dispersive X-ray spectroscopy, the Fe content is less than 10 wt%, and when analyzing by ICP atomic spectroscopy, the Fe content is 10 wt ppm or less.

Description

Technical area

[0001] The present disclosure relates to a noble metal vapor deposition material for use in a vacuum vapor deposition process. State of the art

[0002] Vacuum vapor deposition is a type of coating technology. It involves forming a thin film by heating a vapor-deposited material in a vacuum, and the vaporized material precipitates onto a substrate in the form of gas molecules. Vacuum vapor deposition is widely used to fabricate components in electronic components, semiconductor devices, optical thin films, magnetic devices, LEDs, organic ELs, and LCDs.

[0003] When a vapor deposition material is placed in a crucible and melted using an electron beam or similar method, a problem arises that the so-called "bumping" phenomenon occurs, resulting in molten droplets adhering to the thinly deposited film. To solve this problem, Patent Document 1 describes a technique for preventing bumping by reducing the impurities contained in the vapor deposition material. Furthermore, Patent Document 2 describes that the adhesion of molten droplets can be prevented by washing the surface of the vapor deposition material with aqua regia.

[0004] The applicant has previously disclosed a technique capable of suppressing the bumping phenomenon during vacuum vapor deposition by using a gold vapor deposition material. For example, Patent Document 3 describes a vapor deposition material with a surface roughness Ra of 10 μm or less, in which the number of microcracks with an equivalent area diameter of 0.1 mm or more has been reduced. Patent Document 4 discloses a vapor deposition material with an average crystal grain size of 0.1 mm or more, an oxygen content of 10 ppm by weight or less, and a hydrogen content of 5 ppm by weight or less. State of the art - patent documents [Patent Document 1] Japanese Patent Application Laid-Open No. H1-180961 [Patent Document 2] Japanese Laid-Open Publication No. 2018-123389 [Patent Document 3] International Publication No. 2022 / 070432 [Patent Document 4] International Publication No. 2022 / 070433 Summary of the inventionProblem to be solved by the invention

[0005] The present disclosure has an object to provide a noble metal vapor deposition material suitable for a vacuum vapor deposition method and capable of suppressing the occurrence of the bumping phenomenon during vacuum vapor deposition. Solution to the problem

[0006] The present disclosure can be summarized as follows. [1] According to one aspect of the present disclosure, there is provided a vapor deposition material made of a noble metal, wherein an iron (Fe) content of less than 10 wt% is determined when analyzing a surface of 50 µm × 50 µm by energy dispersive X-ray spectroscopy (EDX) and an Fe content of 10 wt ppm or less is measured when analyzing by ICP atomic spectroscopy. [2] According to another aspect of the present disclosure, there is provided a vapor deposition material made of a noble metal, wherein a silicon (Si) content of less than 10 wt% is determined when analyzing a surface of 50 µm × 50 µm by energy dispersive X-ray spectroscopy and a Si content of 10 wt ppm or less is measured when analyzing by ICP atomic spectroscopy. [3] According to another aspect of the present disclosure, there is provided a vapor deposition material made of a noble metal, wherein a carbon (C) content of 10 wt% or less is determined when analyzing a surface of 50 µm × 50 µm by energy dispersive X-ray spectroscopy and a C content of 10 wt ppm or less is measured when analyzing by non-dispersive infrared spectroscopy. Effect of the invention

[0007] According to the present disclosure, the occurrence of the bumping phenomenon during melting of a noble metal vapor deposition material can be effectively suppressed. This can reduce the number of particles deposited on the substrate, which can lead to improved product yield.

[0008] Precious metal vapor deposition materials for vacuum vapor deposition typically use a precious metal raw material with a purity of 99.9 wt% or higher. The precious metal raw material is melted in an alumina ceramic crucible or a carbon crucible under atmospheric conditions. After melting, the molten precious metal is poured into a mold to produce an ingot. The resulting ingot is drawn using lubricating oil (wire drawing) and then cut to a predetermined length to produce a pellet (rod-shaped). The surface of the pellet is then cleaned with acid or an organic solvent to remove adhering impurities. Through the steps described above, a pellet-shaped precious metal vapor deposition material with relatively few impurities can be produced.

[0009] However, even when using such a precious metal vapor deposition material with relatively few impurities, the problem of bumping occurs during the initial phase of vapor deposition. This leads to a deterioration in production efficiency because the pre-evaporation, which is performed before the actual vapor deposition, takes longer or settings on the coating equipment must be changed. This is particularly problematic because precious metals are extremely expensive as a material—the longer the pre-evaporation time, the higher the cost. Another problem is that bumping contaminates the interior of the equipment and the crucible, resulting in more frequent cleaning of the equipment.

[0010] By analyzing the surface and interior of the vapor deposition material, the inventors and others discovered that numerous iron-based components (iron or its compounds), silicon-based components (silicon or its compounds), and carbon-based components (carbon or its compounds) are present. When these components—hereinafter referred to as "impurity components"—are present in larger quantities, the bumping phenomenon increases accordingly. Therefore, the inventors and others found that the bumping phenomenon during vacuum vapor deposition can be suppressed by reducing these impurities.

[0011] In the present disclosure, the impurity content on the surface of the vapor deposition material is determined by surface analysis using energy-dispersive X-ray spectroscopy. The impurity content within the material is measured using ICP atomic emission spectroscopy or non-dispersive infrared analysis. Since surface analysis using energy-dispersive X-ray spectroscopy can vary greatly from sample to sample, 10 samples were randomly selected, the central region of each sample was measured, and the average of these 10 measurements was used as a measure of the surface impurity content.

[0012] One embodiment of the present disclosure relates to a vapor deposition material made of a noble metal, wherein, when analyzing a 50 µm x 50 µm surface area of ​​the vapor deposition material using energy dispersive X-ray spectroscopy, the Fe content is less than 10 wt%, and when analyzing using ICP atomic emission spectroscopy, the Fe content is 10 wt ppm or less. Iron-based components are compounds and iron oxides containing iron (Fe) as the main component and are contained in the raw materials used or mixed from the equipment used during the wire drawing process.

[0013] By reducing Fe to less than 10 wt% on the surface of the noble metal vapor deposition material and to 10 wt. ppm or less inside the noble metal vapor deposition material, the bumping phenomenon during vapor deposition can be effectively suppressed. The Fe content on the surface of the noble metal vapor deposition material is preferably 5 wt.% or less, more preferably 1 wt.% or less. Furthermore, the Fe content inside the noble metal vapor deposition material is preferably 5 wt. ppm or less, more preferably 1 wt. ppm or less.

[0014] One embodiment of the present disclosure relates to a vapor deposition material made of a noble metal, wherein a 50 µm x 50 µm surface area analysis using energy-dispersive X-ray spectroscopy reveals a Si content of less than 10 wt.% and an ICP optical emission spectrometry analysis reveals a Si content of 10 wt. ppm or less. Silicon-based components are compounds and silicon oxides with silicon (Si) as the main constituent. These components originate not only from the raw material used but also enter the material from the ambient air or the crucible used during the melting process.

[0015] By reducing Si to less than 10 wt% on the surface of the noble metal vapor deposition material and to 10 wt. ppm or less inside, the bumping phenomenon during vapor deposition can be effectively suppressed. The Si content on the surface is preferably 5 wt.% or less, more preferably 1 wt.% or less. The Si content inside the vapor deposition material is preferably 5 wt. ppm or less, more preferably 1 wt. ppm or less.

[0016] One embodiment of the present disclosure relates to a noble metal vapor deposition material wherein a C content of 10 wt% or less is determined when analyzing a 50 µm x 50 µm surface area using energy-dispersive X-ray spectroscopy and a C content of 10 wt ppm or less is determined when analyzing a 50 µm x 50 µm surface area using non-dispersive infrared spectroscopy. Carbon-based components are compounds with carbon (C) as the main constituent, which enter the material, for example, when using a carbon crucible or a carbon mold, or through lubricating oil during the wire drawing process.

[0017] By reducing C to 10 wt% or less on the surface of the noble metal vapor deposition material and to 10 wt. ppm or less inside the vapor deposition material, the bumping phenomenon during vapor deposition can be effectively suppressed. The C content on the surface of the noble metal vapor deposition material is preferably 5 wt% or less, more preferably 1 wt% or less.

[0018] In the vapor deposition material according to the embodiments of the present disclosure, ideally at least one of the constituents Fe, Si, or C is within the above-mentioned limits, preferably two of the constituents, and more preferably all three—Fe, Si, and C—are within the above-mentioned limits. Since a large amount of these impurities on the surface of the vapor deposition material causes the bumping phenomenon, the origin of the impurities is not critical.

[0019] In the present disclosure, the vapor deposition material is made of a noble metal, namely gold (Au), platinum (Pt), palladium (Pd), or silver (Ag). Typically, a high-purity product with a purity of 99.9 wt% or higher, or 99.99 wt% or higher, is used. Since impurities are a cause of the bumping phenomenon, this phenomenon can be suppressed to some extent by using a high-purity product. However, high-purity products are expensive and can be customized accordingly depending on the intended use or application.

[0020] The manufacturing method of the vapor deposition material according to this embodiment will now be explained in detail. It should be noted that the manufacturing conditions mentioned are merely examples, and the manufacturing method is not limited to these conditions. In order to avoid unnecessarily confusing the disclosure of the manufacturing method, explanations of generally known manufacturing processes and processing steps will be omitted. Casting process

[0021] A precious metal raw material with a purity of 99.9 wt% or higher is melted using electron beam melting (EB melting), skull melting, or a similar process. While ceramic or carbon crucibles are commonly used for casting precious metals, their use introduces impurity components into the material. Therefore, it is preferable to conduct EB melting in a copper crucible with lower impurities or to use skull melting with the lowest possible crucible impurities. The melting temperature should preferably be 50°C or more and no more than 200°C above the melting point of the respective precious metal.After melting the precious metal raw material under vacuum conditions or in an inert gas atmosphere (vacuum: 1000 to 0.001 Pa), the molten metal is poured into a water-cooled copper mold and then cooled to room temperature to produce a precious metal ingot (cast product). While this process can eliminate impurities from the crucible and mold, impurities originating from the raw material remain. Forging process, rolling process

[0022] Forging and rolling are performed to obtain a specific shape suitable for the subsequent wire drawing process. During this process, there is a possibility of impurities from the machine parts being introduced. By forging and rolling while heating the ingot to a temperature of 300°C or more, which is 100°C or more lower than the melting point of the target precious metal, the impurities originating from the raw material or mixed from the machine parts may condense on the surface. The heating temperature is preferably 300°C or more. However, since some of the precious metal will melt if heated at a temperature higher than the melting point of the target precious metal, it is preferable to heat the ingot to a temperature 100°C or more lower than the melting point of the target precious metal.While impurities from the equipment or the environment can adhere to the surface during forging and rolling, these impurities can condense on the surface of the precious metal by heating the ingot to a predetermined temperature during these processes. Wire drawing, cutting

[0023] The resulting precious metal (forged or rolled product) is drawn into a wire shape (wire drawing process). Impurities condense on the surface from the inside before and after this wire drawing process, or during the wire drawing process. The optimal heat treatment temperature range depends on the type of vapor deposition material, and it is preferable to adjust the heat treatment temperature as follows.

[0024] Heat treatment temperature of gold (Au): 300°C or higher, 900°C or lower; heat treatment temperature of platinum (Pt): 500°C or higher, 1500°C or lower; heat treatment temperature of palladium (Pd): 300°C or higher, 1000°C or lower; heat treatment temperature of silver (Ag): 300°C or higher, 800°C or lower. While impurities may adhere to the surface from the equipment or the surrounding atmosphere due to the wire drawing process, these impurities are hardly present inside and can be removed by the pickling process described later. It should be noted that lubricating oil is usually used during the wire drawing process, but its use should preferably be avoided as it may lead to contamination from carbonaceous components. After the wire drawing process, the wire is cut to a predetermined length.There are no specific restrictions on the length to which the wire should be cut, as this varies depending on the equipment and can be, for example, 10 mm or more, 20 mm or more, or 30 mm or more. Pickling and washing process

[0025] After cutting, the impurities condensed on the surface of the precious metal (vapor deposition material) can be removed by pickling and washing the surface. Examples of solutions that can be used for the acid are aqua regia and hydrochloric acid. The precious metal is then washed with acetone and pure water. The desired precious metal vapor deposition material (rod form) can be produced based on the processes described above. Examples

[0026] The present invention will now be explained with reference to the following examples and comparative examples. Note that the following examples are merely representative examples, and the present invention is not limited to these examples, but should be interpreted according to the technical concept described herein.

[0027] The examples and comparative examples were analyzed using the following apparatus and conditions. Surface analysis using energy-dispersive X-ray spectroscopy Analyzer: Aztec Advanced UltimMax 40, manufactured by Oxford Acceleration voltage: 10 kV or 15 kV Magnification: 200 to 20,000 times Irradiation current: 7 to 10 µA Objective aperture: 3 Analyzed area: 100 µm × 100 µm Working distance (WD): 10 mm Detector: secondary electrons Resolution: 127 eV Measurement method: A sample with a diameter of 2 mm and a length of 20 mm was prepared. Since surface analysis varies considerably from sample to sample, 10 samples were randomly selected, the center portion of each sample was measured, and the average value was determined from the measured values ​​of the 10 samples. Analysis using ICP atomic emission spectroscopy Analyzer: ICP-OES, SPECTROGREEN FMD46, manufactured by AMETEK Sample: Approximately 2 g was extracted from the vapor deposition material, dissolved in aqua regia, filtered, and then adjusted to a constant volume. Analysis using non-dispersive infrared spectroscopy Analyzer: Carbon / Sulfur Analyzer EMIA-920V, manufactured by HORIBA Combustion improver: W 1.5 g, Sn 3.5 g Assessment of the bumping phenomenon

[0028] When a bumping phenomenon occurs during electron beam melting of a vapor deposition material, the vapor deposition material adheres to the inside of the deposition equipment, and the weight of the vapor deposition material decreases. Therefore, the bumping phenomenon can be evaluated by measuring the weight loss of the vapor deposition material after melting. Approximately 40 g of the vapor deposition material is placed in a copper crucible and subjected to electron beam melting under the following conditions: vacuum of 1 × 10 -1Pa, electron beam irradiation power of 6 kW, and electron beam irradiation time of 2 minutes. The weight loss after melting was then measured. Note that vapor deposition losses hardly occur under these melting conditions. A weight loss of less than 0.01 wt% was rated as ⊚ (very good), a weight loss of 0.01 or more and less than 0.1 wt% was rated as ◯ (good), a weight loss of 0.1 or more and less than 1 wt% was rated as Δ (poor), and a weight loss of 1 wt% or more was rated as "×" (very poor). Example 1: Au vapor deposition material

[0029] A Au raw material with a purity of 99.99 wt% or higher was subjected to electron beam melting in a water-cooled copper crucible at a vacuum of 10 Pa to produce an ingot. The resulting ingot was forged at 300°C and rolled into a 50 mm square ingot. The ingot was then subjected to wire drawing with a heat treatment at 500°C. No lubricating oil was used during wire drawing, and the resulting wire was thinned to a diameter of approximately 2 mm. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, then washed with acetone, and then dried. The surface of the pulled sample was observed with an SEM (JSM-7000E, manufactured by JEOL Ltd.: 100x magnification) and then analyzed by dispersive X-ray spectroscopy. The results showed that Fe, Si, and C all accounted for less than 10 wt%. Furthermore, analysis of the sample by ICP atomic emission spectroscopy revealed that Fe and Si accounted for less than 1 wt. ppm. When analyzing the sample by non-dispersive infrared spectroscopy, the C content was below 10 wt. ppm. When evaluating the bumping phenomenon of the obtained sample, the weight loss rate was very good, at less than 0.01%. Comparative Example 1: Au vapor deposition material

[0030] A Au raw material with a purity of 99.99 wt% or higher was melted in a carbon crucible under atmospheric conditions to produce an ingot. The resulting ingot was forged and rolled into a 50 mm square ingot. The ingot was then drawn without heat treatment. No lubricating oil was used during wire drawing, and the resulting wire was thinned. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, and then washed with acetone and dried.

[0031] The surface of the pulled sample was analyzed using energy-dispersive X-ray spectroscopy in the same manner as in Example 1. The results showed that Fe, Si, and C were all 10 wt% or more. Furthermore, analysis of the sample using ICP atomic emission spectroscopy revealed that Fe and Si were 18 wt. ppm and 12 wt. ppm, respectively. Analysis of the sample using a non-dispersive infrared device revealed a C content of 30 wt. ppm. Evaluation of the bumping phenomenon of the obtained sample revealed a poor weight loss of 0.2 wt.%. Example 2: Pt vapor deposition material

[0032] A Pt raw material with a purity of 99.95 wt% or higher was skull-melted in a water-cooled copper crucible at a vacuum of 0.1 Pa to produce an ingot. The obtained ingot was forged at 900°C and rolled into a 50 mm square ingot. The ingot was then drawn under heat treatment at 800°C. No lubricating oil was used during wire drawing, and the obtained wire was thinned to a diameter of about 2 mm. After wire drawing, the wire was cut into a length of 20 mm, its surface was pickled with aqua regia, then washed with acetone, and then dried. The surface of the drawn sample was analyzed by energy dispersive X-ray spectroscopy in the same manner as in Example 1. The result was that Fe, Si, and C were all 10 wt% or less. In addition, analysis of the sample by ICP atomic emission spectroscopy revealed that Fe and Si contained 3 wt%.-ppm and 2 wt. ppm, respectively. Analysis of the sample using non-dispersive infrared spectroscopy revealed that C was less than 10 wt. ppm. Evaluation of the bumping phenomenon of the resulting sample revealed a good weight loss of 0.02%. Comparative Example 2: Pt vapor deposition material

[0033] A Pt raw material with a purity of 99.95 wt% was melted in a ceramic crucible under atmospheric conditions to produce an ingot. The resulting ingot was forged and rolled into a 50 mm square ingot. The ingot was then drawn without heat treatment. No lubricating oil was used during wire drawing, and the resulting wire was drawn thinner. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, and then washed with acetone and dried.

[0034] The surface of the pulled sample was analyzed by energy-dispersive X-ray spectroscopy as in Example 1. As a result, Fe, Si, and C were all detected in an amount of 10 wt% or more. Furthermore, analysis of the sample by ICP atomic emission spectroscopy revealed that Fe and Si were 15 wt. ppm and 20 wt. ppm, respectively. Analysis of the sample with a non-dispersive infrared device revealed a C content of 20 wt. ppm. Evaluation of the bumping phenomenon of the obtained sample revealed a very poor weight loss of 1.5 wt.%. Example 3: Pd vapor deposition material

[0035] A Pd raw material with a purity of 99.9 wt% or higher was skull-melted in a water-cooled copper crucible at a vacuum of 500 Pa under argon to produce an ingot. The resulting ingot was forged at 1000°C and rolled into a 50 mm square ingot. The ingot was then drawn under heat treatment at 600°C. No lubricating oil was used during wire drawing, and the resulting wire was thinned to a diameter of approximately 2 mm. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, and then washed with acetone and dried.

[0036] The surface of the pulled sample was analyzed by energy-dispersive X-ray spectroscopy in the same manner as in Example 1. The results showed that Fe and Si were each less than 10 wt%, and C was 10 wt%. Furthermore, analysis of the sample by ICP atomic emission spectroscopy revealed that Fe and Si were 5 wt ppm and 8 wt ppm, respectively. When analyzing the sample by non-dispersive infrared spectroscopy, C was 10 wt ppm. When evaluating the bumping phenomenon of the obtained sample, the weight loss rate was good at 0.09%. Comparative Example 3: Pd vapor deposition material

[0037] A Pd raw material with a purity of 99.9 wt% or higher was melted in a ceramic crucible under atmospheric conditions to produce an ingot. The resulting ingot was forged and rolled into a 50 mm square ingot. The ingot was then drawn without heat treatment. No lubricating oil was used during wire drawing, and the resulting wire was drawn thinner. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, and then washed with acetone and dried.

[0038] The surface of the pulled sample was analyzed using energy-dispersive X-ray spectroscopy in the same manner as in Example 1. The results showed that Fe, Si, and C were all 10 wt% or more. Furthermore, analysis of the sample using ICP atomic emission spectroscopy revealed that Fe and Si were 30 wt ppm and 45 wt ppm, respectively. Analysis of the sample using a non-dispersive infrared device revealed a C content of 20 wt ppm. Evaluation of the bumping phenomenon of the obtained sample revealed a very poor weight loss of 2.7 wt%. Example 4: Ag vapor deposition material

[0039] An Ag raw material with a purity of 99.99 wt% or higher was subjected to electron beam melting in a water-cooled copper crucible at a vacuum of 10 Pa to produce an ingot. The resulting ingot was forged and rolled at 500°C into a 50 mm square ingot. The ingot was then heat-treated and drawn at 300°C. No lubricating oil was used during wire drawing, and the resulting wire was thinned to a diameter of approximately 2 mm. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, then washed with acetone, and then dried.

[0040] The surface of the pulled sample was analyzed using energy-dispersive X-ray spectroscopy as in Example 1. The results showed that Fe, Si, and C all accounted for less than 10 wt%. Furthermore, analysis of the sample using ICP atomic emission spectroscopy revealed that Fe and Si both accounted for less than 1 wt. ppm. When the sample was analyzed using non-dispersive infrared spectroscopy, the C content was below 10 wt. ppm. Evaluation of the bumping phenomenon of the obtained sample revealed a very good weight loss of less than 0.01%. Comparison example 4

[0041] An Ag raw material with a purity of 99.99 wt% or higher was melted in a carbon crucible under atmospheric conditions to produce an ingot. The resulting ingot was forged and rolled into a 50 mm square ingot. The ingot was then drawn without heat treatment. No lubricating oil was used during wire drawing, and the resulting wire was drawn thinner. After wire drawing, the wire was cut to a length of 20 mm, its surface was pickled with aqua regia, and then washed with acetone and dried.

[0042] The surface of the pulled sample was analyzed using energy-dispersive X-ray spectroscopy in the same manner as in Example 1. The results showed that Fe, Si, and C were all 10 wt% or more. Furthermore, analysis of the sample using ICP atomic emission spectroscopy revealed that Fe and Si were 12 wt. ppm and 15 wt. ppm, respectively. Analysis of the sample using a non-dispersive infrared device revealed a C content of 50 wt. ppm. Evaluation of the bumping phenomenon of the obtained sample revealed a poor weight loss of 0.5 wt.%. Table 1 Vapor deposition material Manufacturing process Surface analysis (average value) Analysis of the interior Weight loss (%) Evaluation raw material Melt Forging and rolling Pull [Wt.%] (ppm by weight) % by weight Type of crucible Heating temperature Heat treatment temperature Fe Si c Fe Si C Example 1 Au 99,99 Water-cooled crucible 300°C 500°C <1 <1 <1 <1 <1 <10 <0,01 ⊚ Comparison example 1 Au 99,9 Carbon crucible No No 15 17 21 18 12 30 0,2 Δ Example 2 Pt 99,95 Water-cooled crucible 900°C 800°C 4 2 6 3 2 <10 0,02 ◯ Comparison example 2 Pt 99,95 Ceramic crucible No No 26 24 20 15 20 20 1,5 × Example 3 Pd 9,99 Water-cooled crucible 1000°C 600°C 9 7 10 5 8 10 0,09 ◯ Comparison example 3 Pd 99,9 Ceramic crucible No No 18 38 30 30 45 20 2,7 × Example 4 Ag 99,99 Water-cooled crucible 500°C 300°C 1 <1 4 <1 <1 <10 <0,01 ⊚ Comparison example 4 Ag 99,99 Carbon crucible No No 37 20 40 12 15 50 0,5 Δ Industrial applicability

[0043] According to the present disclosure, the occurrence of the "bumping" phenomenon during melting of a noble metal vapor deposition material can be effectively suppressed. As a result, a reduction in particles deposited on the substrate is expected, which can contribute to an improvement in product yield. The noble metal vapor deposition material according to the present disclosure is useful for the fabrication of devices in electronic components, semiconductor devices, optical thin films, magnetic components, LEDs, organic ELs, and LCDs. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 1-180961

[0004] JP 2018-123389

[0004] WO 2022 / 070432

[0004] WO 2022 / 070433

[0004]

Claims

[1] A noble metal vapor deposition material, wherein when analyzing a surface area of ​​50 µm × 50 µm of the vapor deposition material by energy dispersive X-ray spectroscopy, the Fe content is less than 10 wt% and when analyzed by ICP atomic emission spectroscopy, the Fe content is 10 wt ppm or less. [2] A noble metal vapor deposition material, wherein when a surface area of ​​50 µm × 50 µm of the vapor deposition material is analyzed by energy dispersive X-ray spectroscopy, the Si content is less than 10 wt% and when analyzed by ICP atomic emission spectroscopy, the Si content is 10 wt ppm or less. [3] A noble metal vapor deposition material, wherein when a surface area of ​​50 µm × 50 µm of the vapor deposition material is analyzed by energy dispersive X-ray spectroscopy, the C content is 10 wt% or less, and when analyzed by non-dispersive infrared spectroscopy, the C content is 10 wt ppm or less.