POWER CONVERSION DEVICE

DE112023005437T5Pending Publication Date: 2025-11-06DENSO CORP
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Patent Information

Application Number
DE112023005437
Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-12-27
Filing Date
2023-11-21
Publication Date
2025-11-06

AI Technical Summary

Technical Problem

Existing power conversion devices face challenges in ensuring insulation reliability due to voids or unfilled gaps in the sealing member between parallel main terminals, which can compromise the insulation between the main terminals and the radiator.

Method used

A power conversion device design incorporating a frame with an extending portion made of an electrically insulating material that increases the distance between the main terminals and the radiator, even when voids or unfilled gaps occur in the sealing member, thereby enhancing insulation reliability.

Benefits of technology

The design provides a power conversion device with high insulation reliability by maintaining effective insulation despite potential gaps in the sealing member, ensuring reliable operation and safety.

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Abstract

A power conversion device comprises: a base (20) with a first cooler (21), a semiconductor module (30) stacked on the first cooler, a frame (40) arranged to surround the semiconductor module and attached to the base, and an electrically insulating sealing element (50) filled in a region surrounded by the frame to seal the main terminal (34). The frame (40) has an outer circumferential wall section (41) that surrounds the semiconductor module (30) in plan view and an extension section (42). The extension section is made of an electrically insulating material, extends from the outer circumferential wall section (41) to a position that overlaps with the semiconductor module (30) in plan view, and is positioned between the semiconductor module (30) and the first cooler (21) in the stacking direction.
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Citation Information

Patent Citations

  • JAPANISCHENPATENTANMELDUNGNR.2022-210361

  • Power semiconductor device

    JP2019068533A