HIGH-FREQUENCY SWITCHING, HIGH-FREQUENCY MODULE AND HIGH-FREQUENCY SIGNAL TRANSMISSION METHOD

Abstract

A high-frequency circuit (1) comprises a power amplifier (50) connected to an antenna (200V), a power amplifier (60) connected to an antenna (200H), a switching capacitor circuit (20) configured to generate a plurality of discrete voltages based on an input voltage, a power supply modulation circuit (30A) configured to selectively output at least one of the plurality of discrete voltages to the power amplifier (50), and a power supply modulation circuit (30B) configured to selectively output at least one of the plurality of discrete voltages to the power amplifier (60).

Description

Technical field

[0001] The present invention relates to a high-frequency circuit, a high-frequency module and a high-frequency signal transmission method. State of the art

[0002] In recent years, the efficiency of power amplification has been improved by applying an envelope tracking (ET) mode to a power amplifier circuit (see, for example, patent document 1). List of cited documents Patent document

[0003] Patent Document 1: US Patent No. 8829993 Brief description of the invention Technical problem

[0004] However, a power amplification system (high-frequency circuit) driven in ET mode requires a power amplifier and a follower circuit that supplies the power amplifier with a power supply voltage in ET mode. Furthermore, transmitting high-frequency signals, for example in a millimeter-wave band or a sub-terahertz band, requires a vertical polarization transmission path and a horizontal polarization transmission path. Therefore, the size of the amplification system (high-frequency circuit) can increase.

[0005] The present invention was made to solve the above problem and provides a small-format high-frequency circuit and a small-format high-frequency module including a power amplification system in an ET mode, as well as a high-frequency signal transmission method which can implement the small-format high-frequency circuit and the small-format high-frequency module. Solution to the problem

[0006] A high-frequency circuit according to one aspect of the present invention comprises the following features: a first power amplifier connected to a first vertical polarization antenna; a second power amplifier connected to a first horizontal polarization antenna; a switching capacitor circuit configured to generate a plurality of discrete voltages based on an input voltage; a first supply modulator configured to selectively output at least one of the plurality of discrete voltages to the first power amplifier; and a second supply modulator configured to selectively output at least one of the plurality of discrete voltages to the second power amplifier.

[0007] A high-frequency module according to one aspect of the present invention comprises: a module laminate; and a first integrated circuit arranged on the module laminate. The first integrated circuit comprises at least one switch contained in a switching capacitor circuit, at least one switch contained in a first supply modulator, and at least one switch contained in a second supply modulator. The switching capacitor circuit is configured to generate a plurality of discrete voltages based on an input signal and to output the plurality of generated discrete voltages to the first supply modulator and the second supply modulator.A first output terminal of the first power supply modulator, contained in the first integrated circuit, is connected to a first power amplifier, which is connected to a first vertical polarization antenna. A second output terminal of the second power supply modulator, contained in the first integrated circuit, is connected to a second power amplifier, which is connected to a first horizontal polarization antenna.

[0008] A high-frequency signal transmission method according to one aspect of the present invention comprises the following steps: generating a plurality of discrete voltages based on an input signal; selectively supplying at least one of the plurality of discrete voltages to a first power amplifier based on an envelope signal of a first high-frequency signal; selectively supplying at least one of the plurality of discrete voltages to a second power amplifier based on an envelope signal of a second high-frequency signal; amplifying the first high-frequency signal by the first power amplifier and radiating a vertically polarized signal; and amplifying the second high-frequency signal by the second power amplifier and radiating a horizontally polarized signal. Advantageous effects of the invention

[0009] According to the present invention, it is possible to provide the small-format high-frequency circuit and the small-format high-frequency module including the power amplification system in ET mode, as well as the high-frequency signal transmission method that can realize the small-format high-frequency circuit and the small-format high-frequency module. Brief description of the drawings Fig. Figure 1A is a diagram illustrating an example of a power supply voltage transition in an average power tracking (APT) mode. Fig. Figure 1B is a diagram illustrating an example of a power supply voltage transition in an analog ET mode. Fig. 1C is a diagram illustrating an example of a power supply voltage transition in a digital ET mode. Fig. Figure 2 is a circuit structure diagram of a high-frequency circuit and a communication device according to a first embodiment. Fig. Figure 3 is a circuit block diagram of a follower circuit according to the first embodiment. Fig. Figure 4 is a circuit structure diagram of the follower circuit according to the first embodiment. Fig. Figure 5 is a flowchart illustrating a high-frequency signal transmission method according to the first embodiment. Fig. Figure 6A is a top view of a high-frequency module according to Example 1. Fig. Figure 6B is a cross-sectional view of the high-frequency module according to Example 1. Fig. 7A is a top view of a high-frequency module according to Example 2. Fig. Figure 7B is a top view of the high-frequency module according to Example 2. Fig. 7C is a cross-sectional view of the high-frequency module according to Example 2. Fig. Figure 8 is a circuit structure diagram of a high-frequency circuit according to a second embodiment. Fig. Figure 9 is a cross-sectional view of a high-frequency module according to Example 3. Fig. Figure 10 is a cross-sectional view of a high-frequency module according to Example 4. Fig. Figure 11 is a circuit structure diagram of a high-frequency circuit according to modification 1 of the second embodiment. Fig. Figure 12 is a cross-sectional view of a high-frequency module according to Example 5. Fig. Figure 13 is a cross-sectional view of a high-frequency module according to Example 6. Fig. Figure 14 is a circuit structure diagram of a high-frequency circuit according to modification 2 of the second embodiment. Description of exemplary implementations

[0010] Exemplary embodiments of the present disclosure are described in detail below with reference to the drawings. The following exemplary embodiments are comprehensive or specific examples. Values, shapes, materials, components, arrangements, and connection forms of components, etc., shown in the following exemplary embodiments are examples, and it is not intended that they limit the present invention.

[0011] The drawings are schematic representations which, for the purpose of illustrating the present invention, may contain exaggerations, omissions, or adjustments to proportions and need not be strictly accurate representations. The shapes, positional relationships, and ratios may differ from the actual ones. In the drawings, essentially identical components are designated with the same reference numerals, and redundant descriptions may be omitted or simplified.

[0012] In the drawings, an x-axis and a y-axis in a plane parallel to the main surface of a module laminate are orthogonal to each other. Specifically, if the module laminate has a rectangular shape in a top view, the x-axis is parallel to a first side of the module laminate, and the y-axis is parallel to a second side that is orthogonal to the first side of the module laminate. A z-axis is perpendicular to the main surface of the module laminate. Its positive direction is an upward direction, and its negative direction is a downward direction.

[0013] In a circuit structure of the present embodiment, the term "connected" includes not only a direct connection at a terminal and / or a wiring conductor, but also an electrical connection via any other circuit element. The expression "switched between A and B" means a connection to both A and B.

[0014] With regard to a component arrangement in the present disclosure, the expression "a component is arranged on a circuit board" includes an arrangement of the component on the main surface of the circuit board and an arrangement of the component within the circuit board. The expression "a component is arranged on the main surface of a circuit board" includes an arrangement of the component in contact with the main surface of the circuit board and an arrangement of the component above the main surface without contact with the main surface (e.g., a lamination of the component onto another component that is arranged in contact with the main surface). The expression "a component is arranged on the main surface of a circuit board" may include an arrangement of the component in a recess formed in the main surface.The expression “a component is arranged in a circuit board” includes encapsulation of the component in a module laminate, arrangement of the entire component between two main surfaces of the circuit board, with part of the component not being covered by the circuit board, and arrangement of only part of the component in the circuit board.

[0015] In a circuit interconnection structure of the present disclosure, the expression “a component (an element) A is arranged in series on a path B” means that both the signal input end and the signal output end of component (element) A are connected to wires, electrodes, or terminals that form path B. The expression “a plurality of paths is connected in parallel” means that the first ends of the plurality of paths are connected to the same wire, electrode, or terminal.

[0016] With regard to component orientation in the present disclosure, a “top view of a module laminate” means that an object is viewed while projected orthogonally onto an xy-plane from a positive side of the z-axis. The expression “A overlaps B in a top view” means that at least a portion of the area of ​​A projected orthogonally onto the xy-plane overlaps at least a portion of the area of ​​B projected orthogonally onto the xy-plane. The expression “A is positioned between B and C” means that at least one of a plurality of line segments connecting a point in B and a point in C passes through A.

[0017] With regard to a component arrangement in the present disclosure, the expression "A is arranged to be adjacent to B" means that A and B are arranged in close proximity / ... that, specifically, no other circuit component is present in the space in which A points towards B. In other words, the expression "A is arranged to be adjacent to B" means that none of a plurality of line segments, each extending from a point on the surface of A pointing towards B along a direction normal to the surface to reach B, passes through any circuit components other than A and B. The circuit components denote components including an active element and / or a passive element.That is to say, the circuit components include active components including a transistor or diode, as well as passive components including an inductor, transformer, capacitor or resistor, and do not include electromechanical components including a terminal, connector or wire.

[0018] In the present disclosure, a “termination” refers to a point where a conductor ends in an element. If the impedance of a conductor between elements is sufficiently low, the termination is not to be regarded merely as a single point, but as any point on the conductor between the elements or as the entire conductor.

[0019] Terms such as "parallel" and "perpendicular", which indicate a relationship between elements, terms such as "rectangular", which indicate the shape of an element, and numerical ranges do not have strict meanings, but rather meanings that essentially encompass the same ranges, for example, with errors of several percent.

[0020] First, tracking modes, in which a power amplifier is supplied with a power supply voltage that is dynamically adjusted over time based on a high-frequency signal, are described as technologies for amplifying the high-frequency signal with high efficiency. Tracking mode is a method for dynamically adjusting the power supply voltage applied to a power amplifier. Tracking modes include several types. Average Power Tracking (APT) mode and Envelope Tracking (ET) modes (including analog and digital ET modes) are discussed herein with reference to Fig. 1A to 1C described. In Fig. From 1A to 1C, the horizontal axis represents time and the vertical axis represents voltage. A thick solid line represents a power supply voltage, and a thin solid line (waveform) represents a modulated signal.

[0021] Fig. Figure 1A is a diagram illustrating an example of a power supply voltage transition in APT mode. In APT mode, the power supply voltage varies between a plurality of discrete voltage levels within a frame based on an average power. Consequently, the power supply voltage signal forms a rectangular waveform.

[0022] A frame is a unit of a high-frequency signal (modulated signal). For example, in 5GNR (5th Generation New Radio) and LTE (Long Term Evolution), a frame comprises ten subframes, each subframe containing a plurality of slots, and each slot containing a plurality of symbols. A subframe length is 1 ms, and a frame length is 10 ms.

[0023] APT mode is a mode for varying the voltage level in units of a frame or larger based on average power, and differs from modes for varying the voltage level in units smaller than a frame (e.g., a subframe, a slot, or a symbol). For example, a mode for varying the voltage level in units of a symbol is called symbol power tracking (SPT) mode and is different from APT mode.

[0024] Fig. Figure 1B is a diagram illustrating an example of a power supply voltage transition in analog ET mode. In analog ET mode, the power supply voltage is continuously varied based on an envelope signal to track the envelope of the modulated signal.

[0025] The envelope signal is a signal that indicates the envelope of a modulated signal; an envelope value is, for example, given by the square root of (I 2 + Q 2 The expression (I, Q) represents a constellation point. A constellation point is a point on a constellation diagram for a signal that is modulated by digital modulation. For example, (I, Q) is determined by a BBIC (Baseband Integrated Circuit) based on transmission information.

[0026] Fig. Figure 1C is a diagram illustrating an example of a power supply voltage transition in digital ET mode. In digital ET mode, the power supply voltage is varied between a plurality of discrete voltage levels within a frame based on an envelope signal to track the envelope of a modulated signal. Consequently, the power supply voltage signal forms a rectangular wave. (First embodiment)

[0027] A communication device 9 according to this embodiment corresponds to a user equipment (UE) that communicates with other devices and base stations using radio frequency signals in a millimeter-wave band or a sub-terahertz band and is usually a mobile phone, a smartphone, a tablet computer, a portable device, etc. The communication device 9 can be an IoT (Internet of Things) sensor device, a medical / healthcare device, a car, an unmanned aerial vehicle (UAV) (so-called drone), or an automated guided vehicle (AGV). The communication device 9 can function as a base station. The communication device 9 can be a UE or a base station in a mobile network.

[0028] The circuit structure of the communication device 9 and a high-frequency circuit 1 according to this embodiment are described with reference to Fig. 2 described. Fig. Figure 2 is a circuit structure diagram of the high-frequency circuit 1 and the communication device 9 according to the first embodiment.

[0029] Fig. Figure 2 illustrates an exemplary circuit structure. The communication device 9 and the high-frequency circuit 1 can be assembled using any of a wide variety of circuit assembly and circuit technologies. Therefore, the following description of the communication device 9 and the high-frequency circuit 1 should not be considered restrictive. 1.1 Circuit structure of the communication device 9 and the high-frequency circuit 1

[0030] First, the communication device 9 is described in this embodiment with reference to Fig. 2 described. The communication device 9 comprises the high-frequency circuit 1, antennas 200V and 200H, a BBIC (integrated baseband signal integrated circuit) 300, mixers 410a, 410b, 420a and 420b and local oscillators 510 and 520.

[0031] The high-frequency circuit 1 includes a follower circuit 2 and RFICs (integrated high-frequency circuits) 3A and 3B.

[0032] The RFIC 3A is an example of a signal processing circuit, comprising phase shift circuits 52 and 53, a power amplifier 50, a low noise amplifier 51, a switch 54 and an input terminal 501, and is configured to output a signal in a high frequency band to the antenna 200V.

[0033] The RFIC 3B is an example of the signal processing circuit, comprising phase shift circuits 62 and 63, a power amplifier 60, a low noise amplifier 61, a switch 64 and an input terminal 502, and is configured to output a signal in the high frequency band to the antenna 200H.

[0034] Phase shift circuit 52, an example of a first phase shift circuit, is connected to an input end of power amplifier 50 and adjusts the phase of a transmit signal in the high-frequency band output from mixer 410a. Phase shift circuit 53 adjusts the phase of a receive signal in the high-frequency band output from low-noise amplifier 51. Phase shift circuit 62, an example of a second phase shift circuit, is connected to an input end of power amplifier 60 and adjusts the phase of a transmit signal in the high-frequency band output from mixer 420a. Phase shift circuit 63 adjusts the phase of a receive signal in the high-frequency band output from low-noise amplifier 61.

[0035] The power amplifier 50 is an example of a first power amplifier. It is connected to the 200V antenna via the switch 54 and amplifies the transmitted signal in the high-frequency band output from the phase-shifting circuit 52. The low-noise amplifier 51 amplifies the received signal in the high-frequency band output from the 200V antenna. The power amplifier 50 includes a first gain transistor. The first gain transistor is connected in series along a path connecting the phase-shifting circuit 52 and the switch 54.

[0036] The power amplifier 60, an example of a second power amplifier, is connected to the antenna 200H via the switch 64 and amplifies the transmitted signal in the high-frequency band output from the phase-shifting circuit 62. The low-noise amplifier 61 amplifies the received signal in the high-frequency band output from the antenna 200H. The power amplifier 60 includes a second gain transistor. This second gain transistor is connected in series along a path connecting the phase-shifting circuit 62 and the switch 64.

[0037] Switch 54 connects the antenna 200V to an output of the power amplifier 50 and the antenna 200V to an input of the low-noise amplifier 51. Switch 64 connects the antenna 200H to an output of the power amplifier 60 and the antenna 200H to an input of the low-noise amplifier 61.

[0038] The input terminal 501 is a terminal that is connected to the power amplifier 50 and provides a power supply voltage V ET1 It receives the signal supplied from the follower circuit 2. Input terminal 502 is connected to the power amplifier 60 and provides a power supply voltage V. ET2 receives the signal supplied from the follower circuit 2.

[0039] The power amplifiers 50 and 60 and the low-noise amplifiers 51 and 61 can each amplify a high-frequency signal in a millimeter-wave band or a sub-terahertz band. The power amplifiers 50 and 60 and the low-noise amplifiers 51 and 61 can each amplify a high-frequency signal in a frequency band predefined by a standardization organization (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) or IEEE (Institute of Electrical and Electronics Engineers)) for communication systems designed using radio access technology (RAT).

[0040] The follower circuit 2 generates supply voltages to the power amplifiers 50 and 60 and the low-noise amplifiers 51 and 61, which amplify signals in the high-frequency band, and comprises at least one integrated circuit. Specifically, the follower circuit 2 supplies variable voltages in digital ET mode or SPT mode to the power amplifiers 50 and 60 based on envelope signals supplied by the BBIC 300. The follower circuit 2 supplies constant voltages to the low-noise amplifiers 51 and 61. A circuit structure example of the follower circuit 2 will be described later with reference to Fig. 3 and Fig. 4 described.

[0041] At least one of the power amplifier 50, the low-noise amplifier 51, and the switch 54 need not necessarily be contained in RFIC 3A. At least one of the power amplifier 60, the low-noise amplifier 61, and the switch 64 need not necessarily be contained in RFIC 3B. RFICs 3A and 3B can be a single RFIC.

[0042] Antenna 200V is an example of a first vertical polarization antenna and vertically polarizes the transmitted signal in the high-frequency band output by high-frequency circuit 1 and radiates it back. Antenna 200V outputs a received vertically polarized signal in the high-frequency band to high-frequency circuit 1. Antenna 200H is an example of a first horizontal polarization antenna and horizontally polarizes the transmitted signal in the high-frequency band output by high-frequency circuit 1 and radiates it back. Antenna 200H outputs a received horizontally polarized signal in the high-frequency band to high-frequency circuit 1. Antennas 200V and 200H do not necessarily have to be included in communication device 9.

[0043] The vertical polarization angle can have an error range of approximately 10% of 180°, instead of being strictly 90° (or 270°), relative to the reference (e.g., antenna radiation plane). That is, the vertical polarization angle can be within a range of (90° ± 18°) or (270° ± 18°) relative to the reference (e.g., antenna radiation plane). The horizontal polarization angle can have an error range of approximately 10% of 180°, instead of being strictly 0° (or 180°), relative to the reference (e.g., antenna radiation plane). That is, the horizontal polarization angle can be within a range of (0° ± 18°) or (180° ± 18°) relative to the reference (e.g., antenna radiation plane).

[0044] The BBIC 300 is an integrated circuit that generates a baseband transmit signal and processes a baseband receive signal. The BBIC 300 feeds an envelope signal to the follower circuit 2 of the high-frequency circuit 1.

[0045] Mixer 410a converts the transmit signal generated by BBIC 300, based on a local oscillation wave from local oscillator 510, upwards and outputs the upward-converted transmit signal to the transmission path of RFIC 3A. Mixer 410b converts the receive signal output from the receive path of RFIC 3A downwards, based on a local oscillation wave from local oscillator 510, and outputs the downward-converted receive signal to BBIC 300. Mixer 420a converts the transmit signal generated by BBIC 300, based on a local oscillation wave, upwards to local oscillator 520 and outputs the upward-converted transmit signal to the transmit path of RFIC 3B. The mixer 420b converts the received signal, which is output by the respective path of the RFIC 3B, downwards on the basis of a local oscillation wave from the local oscillator 520 and outputs the downward-converted received signal to the BBIC 300.

[0046] At least one of the mixers 410a and 410b and the local oscillator 510 may be included in RFIC 3A. At least one of the mixers 420a and 420b and the local oscillator 520 may be included in RFIC 3B. 1.2 Circuit structure of the follower circuit 2

[0047] Fig. Figure 3 is a circuit block diagram of the follower circuit 2 according to the first embodiment. The follower circuit 2 comprises a pre-regulator circuit 10, a switched-capacitor circuit 20, supply modulators 30A and 30B, a digital control circuit 40, output terminals 241 and 242, and control signal terminals 261 and 262.

[0048] The pre-regulator circuit 10 can convert an input voltage supplied by a DC power source (not illustrated) into a set voltage using a power inductor. The pre-regulator circuit 10 includes the power inductor and a switch. The power inductor is an inductor used to boost and / or attenuate a DC (direct current) voltage. The power inductor is connected in series on a DC path. The power inductor can be connected between the DC path and ground (i.e., in parallel to the DC path). The pre-regulator circuit 10 can be called a magnetic regulator or a DC-DC converter. The pre-regulator circuit 10 does not necessarily have to include the power inductor.

[0049] The switching capacitor circuit 20 comprises a plurality of capacitors and a plurality of switches and can adjust a plurality of discrete voltages with a plurality of discrete voltage levels from the set voltage supplied by the pre-regulator circuit 10. The switching capacitor circuit 20 can be referred to as a switched-capacitor voltage ladder.

[0050] Supply modulator 30A is an example of a first supply modulator and is configured to select at least one of the multiple discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 50. Supply modulator 30B is an example of a second supply modulator and is configured to select at least one of the multiple discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 60.

[0051] The digital control circuit 40 can control the pre-regulator circuit 10, the switching capacitor circuit 20 and the supply modulators 30A and 30B on the basis of digital control signals from the BBIC 300.

[0052] The follower circuit 2 need not necessarily be part of the pre-regulator circuit 10 and the digital control circuit 40. For example, the follower circuit 2 need not necessarily include the pre-regulator circuit 10. Any combination of the pre-regulator circuit 10, the switching capacitor circuit 20, and the supply modulators 30A and 30B can be integrated into a single circuit. The follower circuit 2 can include a power supply circuit (e.g., a DC-DC converter) with a different circuit structure instead of the pre-regulator circuit 10 and the switching capacitor circuit 20. The follower circuit 2 can include a filter circuit connected between the supply modulator 30A and the power amplifier 50, which attenuates noise from the majority of discrete voltages.The follower circuit 2 can contain a filter circuit that is connected between the supply modulator 30B and the power amplifier 60 and attenuates noise from the majority of discrete voltages.

[0053] With the above structure, the follower circuit 2 can supply the power supply voltage V ET1 , which is one of the majority of discrete voltages, supply the power amplifier 50 from the supply modulator 30A, and the power supply voltage V ET2 , which is one of the majority of discrete voltages, supply to the power amplifier 60 from the supply modulator 30B.

[0054] With the above structure of the high-frequency circuit 1, the majority of discrete voltages to be supplied to the power amplifiers 50 and 60 are generated by the same switching capacitor circuit 20. Thus, the follower circuit 2 can be miniaturized, resulting in a compact high-frequency circuit 1 including the power amplifier system in ET mode.

[0055] Next, the circuit structure of each circuit contained in the follower circuit 2 will be described with reference to Fig. 4 described. Fig. Figure 4 is a circuit structure diagram of the follower circuit 2 according to the first embodiment. 1.2.1 Circuit structure of the switching capacitor circuit 20

[0056] First, the circuit structure of the switching capacitor circuit 20 is described. The switching capacitor circuit 20 comprises capacitors C11 to C16, capacitors C10, C20, C30 and C40, as well as switches S11 to S14, S21 to S24, S31 to S34 and S41 to S44. Energy and charge are input from the pre-regulator circuit 10 into the switching capacitor circuit 20 at node N4 and drawn from the switching capacitor circuit 20 to the supply modulators 30A and 30B at nodes N1 to N4.

[0057] Capacitors C11 to C16 function as floating capacitors (can also be called transfer capacitors). That is, capacitors C11 to C16 are used to increase or decrease the set voltage supplied from the pre-regulator circuit 10. More precisely, capacitors C11 to C16 move the charge between themselves and nodes N1 to N4 to maintain voltages V1 to V4 (voltages relative to ground potential) that satisfy the ratio V1:V2:V3:V4 = 1:2:3:4 at the four nodes N1 to N4. The voltages V1 to V4 correspond to the plurality of discrete voltages with the plurality of discrete voltage levels.

[0058] Capacitor C11 has two electrodes. One electrode of capacitor C11 is connected to one end of switch S11 and one end of switch S12. The other electrode of capacitor C11 is connected to one end of switch S21 and one end of switch S22. Capacitor C12 has two electrodes. One electrode of capacitor C12 is connected to one end of switch S21 and one end of switch S22. The other electrode of capacitor C12 is connected to one end of switch S31 and one end of switch S32. Capacitor C13 has two electrodes. One electrode of capacitor C13 is connected to one end of switch S31 and one end of switch S32. The other electrode of capacitor C13 is connected to one end of switch S41 and one end of switch S42. Capacitor C14 has two electrodes.One of the two electrodes of capacitor C14 is connected to one end of switch S13 and one end of switch S14. The other of the two electrodes of capacitor C14 is connected to one end of switch S23 and one end of switch S24. Capacitor C15 has two electrodes. One of the two electrodes of capacitor C15 is connected to one end of switch S23 and one end of switch S24. The other of the two electrodes of capacitor C15 is connected to one end of switch S33 and one end of switch S34. Capacitor C16 has two electrodes. One of the two electrodes of capacitor C16 is connected to one end of switch S33 and one end of switch S34. The other of the two electrodes of capacitor C16 is connected to one end of switch S42 and one end of switch S44.

[0059] The group of capacitors C11 and C14, the group of capacitors C12 and C15, and the group of capacitors C13 and C16 can each be charged and discharged complementarily by repeating a first phase and a second phase.

[0060] Specifically, in the first phase, switches S12, S13, S22, S23, S32, S33, S42, and S43 are switched on (ON). Thus, for example, one of the two electrodes of capacitor C12 is connected to node N3, the other of the two electrodes of capacitor C12 and one of the two electrodes of capacitor C15 are connected to node N2, and the other of the two electrodes of capacitor C15 is connected to node N1. In the second phase, switches S11, S14, S21, S24, S31, S34, S41, and S44 are switched on (ON). Thus, for example, one of the two electrodes of capacitor C15 is connected to node N3, the other of the two electrodes of capacitor C15 and one of the two electrodes of capacitor C12 are connected to node N2, and the other of the two electrodes of capacitor C12 is connected to node N1.

[0061] By repeating the first and second phases, if, for example, one of the capacitors C12 and C15 is charged from node N2, the other of the capacitors C12 and C15 can be discharged to capacitor C30. That is, capacitors C12 and C15 can be charged and discharged complementarily.

[0062] Similar to the group of capacitors C12 and C15, the group of capacitors C11 and C14 and the group of capacitors C13 and C16 can each be charged and discharged complementarily by repeating the first phase and the second phase.

[0063] Capacitors C10, C20, C30, and C40 function as smoothing capacitors. This means that capacitors C10, C20, C30, and C40 are used to maintain and smooth the voltages V1 to V4 at nodes N1 to N4.

[0064] Capacitor C10 is connected between node N1 and ground. Specifically, one of the two electrodes of capacitor C10 is connected to node N1. The other electrode of capacitor C10 is connected to ground. Capacitor C20 is connected between nodes N2 and N1. Specifically, one of the two electrodes of capacitor C20 is connected to node N2. The other electrode of capacitor C20 is connected to node N1. Capacitor C30 is connected between nodes N3 and N2. Specifically, one of the two electrodes of capacitor C30 is connected to node N3. The other electrode of capacitor C30 is connected to node N2. Capacitor C40 is connected between nodes N4 and N3. Specifically, one of the two electrodes of capacitor C40 is connected to node N4. The other electrode of capacitor C40 is connected to node N3.

[0065] Switch S11 is connected between one of the two electrodes of capacitor C11 and node N3. Specifically, one end of switch S11 is connected to one of the two electrodes of capacitor C11. The other end of switch S11 is connected to node N3. Switch S12 is connected between one of the two electrodes of the capacitor and node N4. Specifically, one end of switch S12 is connected to one of the two electrodes of capacitor C11. The other end of switch S12 is connected to node N4.

[0066] Switch S21 is connected between one of the two electrodes of capacitor C12 and node N2. Specifically, one end of switch S21 is connected to one of the two electrodes of capacitor C12 and the other of the two electrodes of capacitor C11. The other end of switch S21 is connected to node N2. Switch S22 is connected between one of the two electrodes of capacitor C12 and node N3. Specifically, one end of switch S22 is connected to one of the two electrodes of capacitor C12 and the other of the two electrodes of capacitor C11. The other end of switch S22 is connected to node N3.

[0067] Switch S31 is connected between the other of the two electrodes of capacitor C12 and node N1. Specifically, one end of switch S31 is connected to the other of the two electrodes of capacitor C12 and one of the two electrodes of capacitor C13. The other end of switch S31 is connected to node N1. Switch S32 is connected between the other of the two electrodes of capacitor C12 and node N2. Specifically, one end of switch S32 is connected to the other of the two electrodes of capacitor C12 and one of the two electrodes of capacitor C13. The other end of switch S32 is connected to node N2. That is, the other end of switch S32 is connected to the other end of switch S21.

[0068] Switch S41 is connected between the other of the two electrodes of capacitor C13 and ground. Specifically, one end of switch S41 is connected to the other of the two electrodes of capacitor C13. The other end of switch S41 is connected to ground. Switch S42 is connected between the other of the two electrodes of capacitor C13 and node N1. Specifically, one end of switch S42 is connected to the other of the two electrodes of capacitor C13. The other end of switch S42 is connected to node N1. That is, the other end of switch S42 is connected to the other end of switch S31.

[0069] Switch S13 is connected between one of the two electrodes of capacitor C14 and node N3. Specifically, one end of switch S13 is connected to one of the two electrodes of capacitor C14. The other end of switch S13 is connected to node N3. That is, the other end of switch S13 is connected to the other end of switch S11 and the other end of switch S22. Switch S14 is connected between one of the two electrodes of capacitor C14 and node N4. Specifically, one end of switch S14 is connected to one of the two electrodes of capacitor C14. The other end of switch S14 is connected to node N4. That is, the other end of switch S14 is connected to the other end of switch S12.

[0070] Switch S23 is connected between one of the two electrodes of capacitor C15 and node N2. Specifically, one end of switch S23 is connected to one of the two electrodes of capacitor C15 and the other of the two electrodes of capacitor C14. The other end of switch S23 is connected to node N2. That is, the other end of switch S23 is connected to the other end of switch S21 and the other end of switch S32. Switch S24 is connected between one of the two electrodes of capacitor C15 and node N3. Specifically, one end of switch S24 is connected to one of the two electrodes of capacitor C15 and the other of the two electrodes of capacitor C14. The other end of switch S24 is connected to node N3. That is, the other end of switch S24 is connected to the other end of switch S11, the other end of switch S22, and the other end of switch S13.

[0071] Switch S33 is connected between the other of the two electrodes of capacitor C15 and node N1. Specifically, one end of switch S33 is connected to the other of the two electrodes of capacitor C15 and one of the two electrodes of capacitor C16. The other end of switch S33 is connected to node N1. That is, the other end of switch S33 is connected to the other end of switch S31 and the other end of switch S42. Switch S34 is connected between the other of the two electrodes of capacitor C15 and node N2. Specifically, one end of switch S34 is connected to the other of the two electrodes of capacitor C15 and one of the two electrodes of capacitor C16. The other end of switch S34 is connected to node N2. That is, the other end of switch S34 is connected to the other end of switch S21, the other end of switch S32, and the other end of switch S23.

[0072] Switch S43 is connected between the other of the two electrodes of capacitor C16 and ground. Specifically, one end of switch S43 is connected to the other of the two electrodes of capacitor C16. The other end of switch S43 is connected to ground. Switch S44 is connected between the other of the two electrodes of capacitor C16 and node N1. Specifically, one end of switch S44 is connected to the other of the two electrodes of capacitor C16. The other end of switch S44 is connected to node N1. That is, the other end of switch S44 is connected to the other end of switch S31, the other end of switch S42, and the other end of switch S33.

[0073] A first group of switches, comprising switches S12, S13, S22, S23, S32, S33, S42, and S43, and a second group of switches, comprising switches S11, S14, S21, S24, S31, S34, S41, and S44, are switched on and off sequentially based on a control signal S2. Specifically, in the first phase, the first group of switches is switched on and the second group of switches is switched off. Conversely, in the second phase, the first group of switches is switched off and the second group of switches is switched on.

[0074] For example, the charging from capacitors C11 to C13 to capacitors C10 to C40 is carried out in one of the first and second phases, and the charging from capacitors C14 to C16 to capacitors C10 to C40 is carried out in the other of the first and second phases. That is, capacitors C10 to C40 are constantly charged by either capacitors C11 to C13 or capacitors C14 to C16. Therefore, even if high-rate currents flow from nodes N1 to N4 to supply modulators 30A and 30B, nodes N1 to N4 are charged at a high rate. Thus, potential fluctuations at nodes N1 to N4 can be prevented.

[0075] The above operating principles allow essentially equal voltages to be maintained at both ends of each of the capacitors C10, C20, C30, and C40 of the switching capacitor circuit 20. Specifically, at the four nodes designated V1 to V4, the voltages V1 to V4 (voltages relative to ground potential) are maintained, with the ratios V1:V2:V3:V4 = 1:2:3:4. The voltage levels of V1 to V4 correspond to the majority of discrete voltage levels that can be supplied to the supply modulators 30A and 30B by the switching capacitor circuit 20.

[0076] The voltage ratio (V1:V:V3:V4) is not limited to (1:2:3:4). For example, the voltage ratio (V1:V2:V3:V4) can also be (1:2:4:8).

[0077] The structure of the switching capacitor circuit 20, which is in Fig. Figure 4 is an example and is not limiting. Fig. The switching capacitor circuit 20 is configured to supply four discrete voltages, but the number of discrete voltages is not limited to this. The switching capacitor circuit 20 can be configured to supply any number of discrete voltages, as long as the number is two or more. For example, if two discrete voltages are supplied, the switching capacitor circuit 20 includes at least capacitors C12 and C15 and switches S21 to S24 and S31 to S34. 1.2.2 Circuit structures of the 30A and 30B power supply modulators

[0078] Next, the circuit structures of the 30A and 30B power supply modulators are described. The 30A power supply modulator includes input terminals 131A to 134A, switches S51A to S54A, and output terminals 130A and 241. The 30B power supply modulator includes input terminals 131B to 134B, switches S51B to S54B, and output terminals 130B and 242.

[0079] Output terminal 130A is connected to power amplifier 50 via output terminal 241. Output terminal 130A is a connection for supplying the power supply voltage, selected from voltages V1 to V4, to power amplifier 50. Output terminal 130A and output terminal 241 can be a single output terminal.

[0080] Input terminals 131A to 134A are each connected to nodes N4 to N1 of the switching capacitor circuit 20. Input terminals 131A to 134A are connections for receiving the respective voltages V4 to V1 from the switching capacitor circuit 20.

[0081] Switch S51A is connected between input terminal 131A and output terminal 130A. Specifically, switch S51A comprises one terminal connected to input terminal 131A and one terminal connected to output terminal 130A. In this configuration, switch S51A can connect and disconnect input terminal 131A and output terminal 130A by turning the switch on and off based on a control signal S3A. Switch S52A is connected between input terminal 132A and output terminal 130A. Specifically, switch S52A comprises one terminal connected to input terminal 132A and one terminal connected to output terminal 130A.In this connection structure, switch S52 can connect and disconnect input terminal 132A and output terminal 130A by turning them on and off based on control signal S3A. Switch S53A is connected between input terminal 133A and output terminal 130A. Specifically, switch S53A includes one terminal connected to input terminal 133A and one terminal connected to output terminal 130A. In this connection structure, switch S53A can connect and disconnect input terminal 133A and output terminal 130A by turning them on and off based on control signal S3A. Switch S54A is connected between input terminal 134A and output terminal 130A.Specifically, switch S54A comprises one terminal connected to input terminal 134A and one terminal connected to output terminal 130A. In this configuration, switch S54A can connect and disconnect input terminal 134A and output terminal 130A based on control signal S3A. Switches S51A to S54A are controlled to be exclusively switched on. That is, only one of the switches S51A to S54A is switched on, while the rest are switched off. Thus, the supply modulator 30A can output a voltage selected from voltages V1 to V4.

[0082] The structure of the 30A power supply modulator, which is in Fig. Figure 4 is an example and is not limiting. Specifically, the switches S51A to S54A can have any structure, as long as at least one of the four input terminals 131A to 134A can be selectively connected to the output terminal 130A. For example, the supply modulator 30A can further include a switch that is connected between a section containing switches S51A to S53A and a section containing switch S54A and the output terminal 130A. For example, the supply modulator 30A can further include a switch that is connected between a section containing switches S51A and S52A and a section containing switches S53A and S54A and the output terminal 130A.

[0083] When voltages with two discrete voltage levels are supplied from the switching capacitor circuit 20, the supply modulator 30A includes at least two of the switches S51A to S54A.

[0084] The structure of the power supply modulator 30B is not described, as input terminals 131A to 134A of the power supply modulator 30A are replaced by input terminals 131B to 134B, and switches S51A to S54A of the power supply modulator 30A are replaced by switches S51B to S54B. Output terminal 130B is connected to the power amplifier 60 via output terminal 242. Output terminal 130B is a connection for supplying the power supply voltage, selected from voltages V1 to V4, to the power amplifier 60. Output terminal 130B and output terminal 242 can be a single output terminal. 1.2.3 Circuit structure of the pre-regulator circuit 10

[0085] Next, the circuit structure of the pre-regulator circuit 10 is described. The pre-regulator circuit 10 comprises an input terminal 110, an output terminal 111, inductor connection terminals 115 and 116, switches S61, S62, S71 and S72, a power inductor L71 and a capacitor C61.

[0086] Input terminal 110 is an input terminal for the DC voltage. Output terminal 111 is an output terminal for the voltage V4. That is, output terminal 111 is a terminal for supplying the voltage V4 to the switching capacitor circuit 20. Output terminal 111 is connected to node N4 of the switching capacitor circuit 20. Output terminal 111 can be connected to any of nodes N3 to N1 of the switching capacitor circuit 20. Inductor connection terminal 115 is connected to one end of the power inductor L71. Inductor connection terminal 116 is connected to the other end of the power inductor L71.

[0087] Switch S71 is connected between input terminal 110 and one end of power inductor L71 and can switch a connection and disconnection between input terminal 110 and one end of power inductor L71 by turning it on and off based on a control signal S1. Switch S71 is also connected between one end of power inductor L71 and ground and can again switch a connection and disconnection between one end of power inductor L71 and ground by turning it on and off based on a control signal S1.

[0088] Switch S61 is connected between the other end of power inductor L71 and output terminal 111 and can switch a connection and disconnection between the other end of power inductor L71 and output terminal 111 by turning it on and off based on the control signal. Switch S62 is connected between the other end of power inductor L71 and ground and can switch a connection and disconnection between the other end of power inductor L71 and ground by turning it on and off based on the control signal S1.

[0089] One of the two electrodes of capacitor C61 is connected to switch S61 and output terminal 111. The other electrode of capacitor C61 is connected to ground. Capacitor C61 acts as a smoothing capacitor.

[0090] The pre-regulator circuit 10 with the above structure can supply charges to the switching capacitor circuit 20 via the output terminal 111.

[0091] When the input voltage is converted into a set voltage, the pre-regulator circuit 10 includes at least the switches S71 and S72 and the power inductor L71. 1.2.4 Circuit structure of the digital control circuit 40

[0092] Next, the circuit structure of the digital control circuit 40 is described. The digital control circuit 40 comprises a first controller 41 and a second controller 42.

[0093] The first controller 41 can generate the control signals S1 and S2 by processing a serial data signal (DATA) supplied by the BBIC 300 via a control signal port 264, based on a clock signal (CLK) supplied by the BBIC 300 via a control signal port 263. The serial data signal is a data signal transmitted bit by bit on a single signal cable or line.

[0094] The control signal S1 is a signal for controlling the opening and closing of switches S61, S62, S71 and S72, which are contained in the pre-regulator circuit 10. The control signal S2 is a signal for controlling the opening and closing of switches S11 to S14, S21 to S24, S31 to S34 and S41 to S44, which are contained in the switching capacitor circuit 20.

[0095] A signal cable different from the one used for the serial data signal is used for the clock signal so that the first controller 41 can process the serial data signal, but this is not a restriction. For example, the clock signal can be transmitted on the same signal cable as the one used for the serial data signal.

[0096] In this embodiment, the single serial data signal is used to control the pre-regulator circuit 10 and the switching capacitor circuit 20, however, a plurality of serial data signals can be used.

[0097] The second controller 42 can generate the control signals S3A and S3B by processing the same digital control logic / line (DCL) signals (DCL1, DCL2) supplied by the BBIC 300 via control signal terminals 261 and 262. The DCL signals are an example of parallel data signals. Parallel data signals are data signals that are transmitted simultaneously in parallel over a plurality of signal cables or lines.

[0098] The DCL signal (DCL1) is an example of a first parallel data signal and is generated by the BBIC 300 based on a first envelope signal of a first high-frequency signal when the Digital ET mode is applied to the power amplifier 50. The DCL signal (DCL2) is an example of a second parallel data signal and is generated by the BBIC 300 based on a second envelope signal of a second high-frequency signal when the Digital ET mode is applied to the power amplifier 60.

[0099] Control signal S3A controls the opening and closing of switches S51A to S54A, which are contained in the supply modulator 30A, when the Digital ET mode is applied to the power amplifier 50. Control signal S3B controls the opening and closing of switches S51B to S54B, which are contained in the supply modulator 30B, when the Digital ET mode is applied to the power amplifier 60.

[0100] Thus, the 30A power supply modulator selects at least one of the majority of discrete voltages according to the DCL signal (DCL1). The 30B power supply modulator selects at least one of the majority of discrete voltages according to the DCL signal (DCL2).

[0101] The DCL signals (DCL1, DCL2), for example, are each a combination of at least two 1-bit signals. The voltages V1 to V4 are each represented by two 1-bit signals. For example, V1, V2, V3, and V4 are represented by "00", "01", "10", and "11", respectively. The voltage levels can be represented using Gray code.

[0102] The power supply modulators 30A and 30B can supply power amplifiers 50 and 60 individually by controlling them based on the different DCL signals (DCL1 and DCL2). This allows for optimization of the power supply voltages to power amplifiers 50 and 60, thereby optimizing their distortion characteristics. When power amplifiers 50 and 60 are operated using MIMO (Multiple-Input-Multiple-Output), the parameters of DPD (Digital Pre-Distortion) circuits, located upstream of power amplifiers 50 and 60, can be individually adjusted, thus improving communication throughput.

[0103] The 30A and 30B power supply modulators can be controlled based on the same DCL signal (e.g., DCL1). In this case, the same reference signal is transmitted by the 200V and 200H antennas, thus maintaining optimal communication conditions. This improves communication coverage. 1.3 High-frequency signal transmission methods

[0104] Next, a high-frequency signal transmission method to be carried out by the communication device 9 with the above structure will be described with reference to Fig. 5 described. Fig. Figure 5 is a flowchart illustrating the high-frequency signal transmission method according to this embodiment.

[0105] First, the switching capacitor circuit 20 generates a plurality of discrete voltages based on an input voltage (set voltage obtained by converting the input voltage) from the pre-regulator circuit 10 (S10).

[0106] Next, the supply modulator 30A selectively supplies at least one of the majority of discrete voltages generated by the switching capacitor circuit 20 to the power amplifier 50, based on the first envelope signal of the first high-frequency signal (S20).

[0107] The supply modulator 30B selectively supplies at least one of the majority of discrete voltages generated by the switching capacitor circuit 20 to the power amplifier 60 based on the second envelope signal of the second high-frequency signal (S30).

[0108] Next, the power amplifier 50 amplifies the first high-frequency signal. The amplified first high-frequency signal is fed into the antenna 200V, and the antenna 200V radiates a vertically polarized signal (S40).

[0109] The power amplifier 60 amplifies the second high-frequency signal. The amplified second high-frequency signal is fed into the antenna 200H, and the antenna 200H radiates a horizontally polarized signal (S50).

[0110] This method allows the first high-frequency signal to be output to the vertical polarization antenna and the second high-frequency signal to be output to the horizontal polarization antenna to be amplified in ET mode. At this point, the majority of discrete voltages (power supply voltages V) are ET1 and V ET2The signals supplied to the power amplifier 50, which amplifies the first high-frequency signal, and the power amplifier 60, which amplifies the second high-frequency signal, are generated by the same switching capacitor circuit 20. This means the follower circuit can be miniaturized. Thus, a small-format high-frequency circuit 1, including the power amplification system, can be provided in ET mode.

[0111] The timing control for selectively supplying at least one of the plurality of discrete voltages to the power amplifier 50 based on the envelope signal of the first high-frequency signal 20 is desirablely the same as the timing control for selectively supplying at least one of the plurality of discrete voltages to the power amplifier 60 based on the envelope signal of the second high-frequency signal (S30).

[0112] With this setting, the power supply voltage V ET1, which is to be supplied to the power amplifier 50, and the power supply voltage V ET2 The signal supplied to the power amplifier 60 is output by different supply modulators. Therefore, the vertically polarized signal and the horizontally polarized signal can be emitted with high efficiency and high accuracy. 1.4 Assembly example of a high-frequency module 1A according to example 1

[0113] Next, a high-frequency module 1A will be used according to Example 1 with reference to Fig. 6A and Fig. 6B is described as an assembly example of the high-frequency circuit 1 with the structure above.

[0114] Fig. 6A is a top view of the high-frequency module 1A according to Example 1. Fig. Figure 6B is a cross-sectional view of the high-frequency module 1A according to Example 1. Fig. Figure 6A is a diagram illustrating a main surface 90a of a module laminate 90, viewed from the positive side of the z-axis. Fig. 6B illustrates a cross-section along the VIB-VIB line in Fig. 6A is recorded.

[0115] In Fig. 6A and Fig. Figure 6B is an illustration of a portion of the wires (or cables) connecting a plurality of circuit components arranged on module laminate 90, omitted. Fig. 6A and Fig. Figure 6B is an illustration of a shielding electrode layer covering the surface of a resin component 91, omitted. The resin component 91 and the shielding electrode layer can be omitted. Fig. 6A hatched blocks represent any circuit components that are not essential to the present invention.

[0116] As in Fig. As illustrated in Figure 6A, the high-frequency module 1A comprises the module laminate 90, an integrated circuit 80A, and RFICs 3A and 3B.

[0117] The module laminate 90 has main surfaces 90a (first main surface) and 90b (second main surface) facing each other. A mass plane, etc., is formed in the module laminate 90 and on the main surface 90a. Fig. 6A the module laminate 90 has a rectangular shape in a top view, however the shape of the module laminate 90 is not limited to this.

[0118] Examples of Module Laminate 90 include an LTCC (Low Temperature Co-Fired Ceramics) or HTCC (High Temperature Co-Fired Ceramics) board with a laminated structure of multiple dielectric layers, a board with embedded components, a board including a redistribution layer (RBL), and a printed circuit board. Module Laminate 90 is not limited to these.

[0119] The resin component 91 is arranged on the main surface 90a, covers a part of the majority of circuit components and the main surface 90a, and has a function in that it ensures the reliability with respect to mechanical strength, moisture resistance, etc. of the majority of circuit components.

[0120] The integrated circuit 80A is an example of a first integrated circuit and is one of the integrated circuits that form the follower circuit 2. The integrated circuit 80A is arranged on the main surface 90a of the module laminate 90 and comprises a PR switch section 10S, an SC switch section 20S, SM switch sections 30AS and 30BS, a digital control section 40S, and the output terminals 241 and 242. The PR switch section 10S includes switches S61, S62, S71, and S72 of the pre-regulator circuit 10 of the high-frequency circuit 1. The SC switch section 20S includes switches S11 to S14, S21 to S24, S31 to S34, and S41 to S44 of the switching capacitor circuit 20 of the high-frequency circuit 1. The SM switch section 30AS includes switches S51A to S54A of the supply modulator 30A of the high-frequency circuit 1. The SM switch section 30BS includes the switches S51B to S54B of the supply modulator 30B of the high-frequency circuit 1.The digital control section 40S comprises the digital control circuit 40 of the high-frequency circuit 1.

[0121] Output terminal 241 is an example of a first output terminal and is connected to power amplifier 50. Output terminal 242 is an example of a second output terminal and is connected to power amplifier 60.

[0122] The integrated circuit 80A includes at least one switch contained in the switching capacitor circuit 20, at least one switch contained in the supply modulator 30A, and at least one switch contained in the supply modulator 30B, and does not necessarily have to include the PR switch section 10S and the digital control section 40S.

[0123] In Fig. In a top view of the module laminate 90, the integrated circuit 80A has a rectangular shape, but the shape of the integrated circuit 80A is not limited to this.

[0124] The 80A integrated circuit, for example, consists of CMOS (Complementary Metal Oxide Semiconductor) and can be manufactured in particular using a silicon-on-insulator (SOL) process. The 80A integrated circuit is not limited to CMOS.

[0125] The high-frequency module 1A further includes the capacitor C61 (not illustrated) and the power inductor L71 (not illustrated) contained in the pre-regulator circuit 10, and the capacitors C11 to C16 and the capacitors C10 to C40 contained in the switching capacitor circuit 20.

[0126] Capacitor C61, power inductor L71, capacitors C11 to C16, and capacitors C10 to C40 are arranged on the main surface 90a. Power inductor L71 can be located outside the high-frequency module 1A.

[0127] Capacitor C61, capacitors C11 to C16, and capacitors C10 to C40 are mounted as chip capacitors. A chip capacitor is a surface-mount device (SMD) that forms a capacitor. The mounting of most of the capacitors is not limited to chip capacitors. For example, some or all of the capacitors may be contained within an integrated passive device (IPD) or within the integrated circuit 80A.

[0128] The integrated circuit 80A, the capacitor C61, the power inductor L71, the capacitors C11 to C16 and / or the capacitors C10 to C40 can be arranged within the module laminate 90 or on the main surface facing the main surface 90a.

[0129] The RFIC 3A is an example of a second integrated circuit and has the same circuit structure as the RFIC 3A of the high-frequency circuit 1. The RFIC 3A is located on the main surface 90a of the module laminate 90. The RFIC 3A may include the power amplifier 50 and the phase-shifting circuit 52, but does not necessarily have to include the low-noise amplifier 51, the phase-shifting circuit 53, and the switch 54.

[0130] The RFIC 3B is an example of a third integrated circuit and has the same circuit structure as the RFIC 3B of the high-frequency circuit 1. The RFIC 3B is located on the main surface 90a of the module laminate 90. The RFIC 3B may include the power amplifier 60 and the phase-shifting circuit 62, but does not necessarily have to include the low-noise amplifier 61, the phase-shifting circuit 63, and the switch 64.

[0131] RFICs 3A and 3B are each made of, for example, GaAS, SiGe, and / or GaN. RFICs 3A and 3B can each be made of Si or CMOS and can be fabricated, in particular, via a SOI process.

[0132] The high-frequency module 1A can contain the integrated circuit 80A and does not necessarily have to contain the RFICs 3A and 3B. For example, the integrated circuit 80A can be located on the module laminate 90, and the RFICs 3A and 3B can be located on a board that differs from the module laminate 90.

[0133] A plurality of external connection terminals 150 are arranged on the main surface 90b. These plurality of external connection terminals 150 are electrically connected to the electrical components arranged on the main surface 90a via through conductors, etc., inserted between them in the module laminate 90. The plurality of external connection terminals 150 can be contact electrodes or planar electrodes, but are not limited to these. For example, the plurality of external connection terminals 150 can be solder electrodes.

[0134] With the above structure of the high-frequency module 1A, the majority of discrete voltages to be supplied to the power amplifiers 50 and 60 are generated by the same switching capacitor circuit 20. The switches of the follower circuit 2 are integrated into the integrated circuit 80A. Thus, the high-frequency module 1A, which contains the follower circuit 2, can be miniaturized.

[0135] In the high-frequency module 1A according to this example, the integrated circuit 80A is arranged to be adjacent to RFIC 3A and is arranged to be adjacent to RFIC 3B.

[0136] Since the integrated circuit 80A is arranged to be adjacent to RFICs 3A and 3B, the high-frequency module 1A can be smaller. As shown in Fig. As illustrated in Figure 6B, wire 401, which connects the output terminal 241 of integrated circuit 80A and the input terminal 501 of RFIC 3A, can be shortened (or shortened). Although not shown in Figure 6B, wire 401, which connects the output terminal 242 of integrated circuit 80A and the input terminal 502 of RFIC 3B, can also be shortened. This will suppress ringing in the power supply voltages fed to power amplifiers 50 and 60, etc., from the follower circuit 2, thus improving stability. Therefore, the efficiency of the follower circuit 2 can be improved. 1.5 Assembly example of a high-frequency module 1B according to example 2

[0137] Next, a high-frequency module 1B will be used according to Example 2 with reference to Fig. 7A to 7C are described as an assembly example of the high-frequency circuit 1.

[0138] Fig. 7A and Fig. Figure 7B shows top views of the high-frequency module 1B according to Example 2. Fig. 7C is a cross-sectional view of the high-frequency module 1B according to Example 2. Fig. 7A is a diagram illustrating the main surface 90a of the module laminate 90, viewed from the positive side of the z-axis. Fig. 7B is a transparent diagram of the main surface 90b of the modulus laminate 90, viewed from the positive side of the z-axis. Fig. 7C illustrates a cross-section along the VIIC-VIIC line in Fig. 7A and Fig. 7B is recorded.

[0139] In Fig. 7A to 7C is an illustration of a portion of the wires connecting the majority of circuit components arranged on module laminate 90, omitted. Fig. Figures 7A to 7C illustrate shielding electrode layers covering the surfaces of resin components 91 and 92, omitted. The resin components 91 and 92 and the shielding electrode layers can be omitted. Fig. 7B represents hatched blocks representing any circuit components that are not essential to the present invention.

[0140] As in Fig. 7A and Fig. As illustrated in Figure 7B, the high-frequency module 1B comprises the module laminate 90, the integrated circuit 80A, and the RFICs 3A and 3B. The high-frequency module 1B according to this example differs from the high-frequency module 1A according to Example 1 in that the integrated circuit 80A and the RFICs 3A and 3B are arranged separately on both main surfaces of the module laminate 90. With regard to the high-frequency module 1B according to this example, the structure, which is identical to that of the high-frequency module 1A according to Example 1, will not be described here; instead, the main focus will be on describing the different structures.

[0141] The module laminate 90 has the main surfaces 90a (first main surface) and 90b (second main surface) facing each other.

[0142] RFICs 3A and 3B are located on the main surface 90a. Integrated circuit 80A is located on the main surface 90b.

[0143] The majority of external connection terminals 150 are arranged on the main surface 90b. The majority of external connection terminals 150 are electrically connected to the electronic components arranged on the main surface 90a and to the electronic components arranged on the main surface 90b by means of through conductors, etc., located between them in the module laminate 90. The majority of external connection terminals 150 can be contact electrodes or planar electrodes, but are not limited to these. For example, the majority of external connection terminals 150 can be solder electrodes.

[0144] In a top view of the main surfaces 90a and 90b, the first gain transistor of the power amplifier 50 overlaps the integrated circuit 80A at least partially, and the second gain transistor of the power amplifier 60 overlaps the integrated circuit 80A at least partially.

[0145] Since the integrated circuit 80A and the RFICs 3A and 3B are arranged separately on both main surfaces of the module laminate 90, the high-frequency module 1B can be miniaturized. As shown in Fig. As illustrated in Figure 7C, wire 402, which connects the output pin 241 of integrated circuit 80A and the input pin 501 of RFIC 3A, can be shortened. Although not shown in the illustration, wire connecting the output pin 242 of integrated circuit 80A and the input pin 502 of RFIC 3B can also be shortened. This will suppress ringing in the power supply voltages fed to power amplifiers 50 and 60, etc., from the follower circuit 2, thus improving stability. Therefore, the efficiency of the follower circuit 2 can be improved. 1.6 Effects etc.

[0146] As described above, the high-frequency circuit 1 according to this embodiment comprises the power amplifier 50, which is connected to the antenna 200V, the power amplifier 60, which is connected to the antenna 200H, the switching capacitor circuit 20, which is configured to generate the plurality of discrete voltages based on the input voltage, the supply modulator 30A, which is configured to selectively output at least one of the plurality of discrete voltages to the power amplifier 50, and the supply modulator 30B, which is configured to selectively output at least one of the plurality of discrete voltages to the power amplifier 60.

[0147] In the above embodiment, the majority of discrete voltages to be supplied to the power amplifiers 50 and 60 are generated by the same switching capacitor circuit 20. Thus, the follower circuit 2 can be miniaturized, providing a small-format high-frequency circuit 1 including the power amplification system in ET mode.

[0148] For example, in the high-frequency circuit 1, the supply modulator 30A is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal (DCL1), and the supply modulator 30B is configured to select at least one of the plurality of discrete voltages according to the second parallel data signal (DCL2), which differs from the first parallel data signal.

[0149] In the above configuration, the power supply voltages to power amplifiers 50 and 60 can be optimized. Therefore, the distortion characteristics of power amplifiers 50 and 60 can be optimized. If power amplifiers 50 and 60 are operated using MIMO (Multiple-Input-Multiple-Output), the parameters of the DPD circuits located upstream of power amplifiers 50 and 60 can be individually adjusted. Therefore, the communication throughput can be improved.

[0150] In the high-frequency circuit 1, for example, the supply modulator 30A is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal (DCL1), and the supply modulator 30B is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal (DCL1).

[0151] In the above configuration, the same reference signal is transmitted by antennas 200V and 200H, thus maintaining optimal communication conditions. This improves communication coverage.

[0152] The high-frequency module 1A according to Example 1 (and the high-frequency module 1B according to Example 2) comprises the module laminate 90 and the integrated circuit 80A, which is arranged on the module laminate 90. The integrated circuit 80A comprises at least one switch contained in the switching capacitor circuit 20, at least one switch contained in the power supply modulator 30A, and at least one switch contained in the power supply modulator 30B. The switching capacitor circuit 20 is configured to generate a plurality of discrete voltages based on the input voltage and to output the plurality of generated discrete voltages to the power supply modulators 30A and 30B. The output terminal 241 of the power supply modulator 30A, which is contained in the integrated circuit 80A, is connected to the power amplifier 50, which is connected to the 200V antenna.The output terminal 242 of the supply modulator 30B, which is contained in the integrated circuit 80A, is connected to the power amplifier 60, which is connected to the antenna 200H.

[0153] In the above embodiment, the majority of discrete voltages supplied to the power amplifiers 50 and 60 are generated by the same switching capacitor circuit 20. The switches of the follower circuit 2 are integrated into the integrated circuit 80A. Thus, the high-frequency module 1A (and 1B), including the follower circuit 2, can be miniaturized.

[0154] For example, the high-frequency module 1A (and the high-frequency module 1B) further comprises the RFICs 3A and 3B, which are arranged on the module laminate 90. RFIC 3A comprises the power amplifier 50 and the phase-shifting circuit 52, which is connected to the input end of the power amplifier 50. RFIC 3B comprises the power amplifier 60 and the phase-shifting circuit 62, which is connected to the input end of the power amplifier 60.

[0155] In the above embodiment, the integrated circuit 80A and the RFICs 3A and 3B are arranged on the single module laminate 90. Thus, the high-frequency module 1A (and 1B), including the power amplifiers 50 and 60, can be miniaturized.

[0156] In the high-frequency module 1A, for example, the integrated circuit 80A and the RFICs 3A and 3B are arranged on the main surface 90a of the module laminate 90. The integrated circuit 80A is arranged to be adjacent to RFIC 3A, and is arranged to be adjacent to RFIC 3B.

[0157] In the above embodiment, integrated circuit 80A is positioned adjacent to RFICs 3A and 3B. Therefore, the RF module 1A can be reduced in size. Wire 401, which connects output pin 241 of integrated circuit 80A and input pin 501 of RFIC 3A, can be shortened. The wire connecting output pin 242 of integrated circuit 80A and input pin 502 of RFIC 3B can also be shortened. This suppresses ringing in the power supply voltages fed to power amplifiers 50 and 60, etc., from the follower circuit 2, thus achieving stability. Consequently, the efficiency of follower circuit 2 can be improved.

[0158] For example, in the high-frequency module 1B, the module laminate 90 has main surfaces 90a and 90b facing each other. RFICs 3A and 3B are located on main surface 90a. Integrated circuit 80A is located on main surface 90b. In a top view of main surfaces 90a and 90b, the gain transistor of power amplifier 50 overlaps at least partially the integrated circuit 80A, and the gain transistor of power amplifier 60 overlaps at least partially the integrated circuit 80A.

[0159] In the above embodiment, the integrated circuit 80A and the RFICs 3A and 3B are arranged separately on both main surfaces of the module laminate 90. Therefore, the RF module 1B can be reduced in size. The wire 402, which connects the output terminal 241 of the integrated circuit 80A and the input terminal 501 of the RFIC 3A, can be shortened. The wire connecting the output terminal 242 of the integrated circuit 80A and the input terminal 502 of the RFIC 3B can also be shortened. This suppresses ringing in the power supply voltages fed to the power amplifiers 50 and 60, etc., from the follower circuit 2, thus achieving stability. Therefore, the efficiency of the follower circuit 2 can be improved.

[0160] The high-frequency signal transmission method according to this embodiment comprises generating the plurality of discrete voltages based on the input voltage, selectively supplying at least one of the plurality of discrete voltages to the power amplifier 50 based on the envelope signal of the first high-frequency signal, selectively supplying at least one of the plurality of discrete voltages to the power amplifier 60 based on the envelope signal of the second high-frequency signal, amplifying the first high-frequency signal by the power amplifier 50 and radiating the vertically polarized signal, and amplifying the second high-frequency signal by the power amplifier 60 and radiating the horizontally polarized signal.

[0161] In the above embodiment, the first high-frequency signal, to be output to antenna 200V, and the second high-frequency signal, to be output to antenna 200H, can be amplified in ET mode. At this stage, the majority of the discrete voltages supplied to power amplifier 50, which amplifies the first high-frequency signal, and power amplifier 60, which amplifies the second high-frequency signal, are generated by the same switching capacitor circuit 20. This means that the follower circuit 2 can be miniaturized. Thus, a compact high-frequency circuit 1, including the power amplification system, can be implemented in ET mode.

[0162] For example, in the high-frequency signal transmission method, the timing control for selectively supplying at least one of the plurality of discrete voltages to the power amplifier 50 based on the envelope signal of the first high-frequency signal is the same as the timing control for selectively supplying at least one of the plurality of discrete voltages to the power amplifier 60 based on the envelope signal of the second high-frequency signal.

[0163] In the above embodiment, the power supply voltage to be supplied to power amplifier 50 and the power supply voltage to be supplied to power amplifier 60 are output by different supply modulators. Therefore, the vertically polarized signal and the horizontally polarized signal can be emitted with high efficiency and high accuracy. Second embodiment

[0164] The high-frequency circuit 1 according to the first embodiment has a structure in which the high-frequency signals are output to the vertical polarization antenna and the horizontal polarization antenna in one high-frequency band. A high-frequency circuit 6 according to this embodiment has a structure in which the high-frequency signals are output to vertical polarization antennas and horizontal polarization antennas in two high-frequency bands. 2.1 Circuit structure of a high-frequency circuit 6

[0165] Fig. Figure 8 is a circuit diagram of the high-frequency circuit 6 according to the second embodiment. As in Fig. As illustrated in Figure 8, the high-frequency circuit 6 comprises a tracker circuit 4 and an RFIC 5.

[0166] RFIC 5 is an example of a signal processing circuit and includes phase-shift circuits 52a, 52b, 53a, 53b, 62a, 62b, 63a, and 63b; power amplifiers 50a, 50b, 60a, and 60b; low-noise amplifiers 51a, 51b, 61a, and 61b; switches 54a, 54b, 64a, and 64b; and input terminals 511, 512, 513, and 514. RFIC 5 is configured to output signals in a first high-frequency band to antennas 201V and 201H, and output signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band to antennas 202V and 202H.

[0167] The RFIC 5 can contain a first RFIC containing the phase shift circuit 52a and the power amplifier 50a, a second RFIC containing the phase shift circuit 62a and the power amplifier 60a, a third RFIC containing the phase shift circuit 52b and the power amplifier 50b, and a fourth RFIC containing the phase shift circuit 62b and the power amplifier 60b.

[0168] Phase shift circuit 52a is connected to an input end of power amplifier 50a and adjusts the phase of a transmitted signal in the first high-frequency band. Phase shift circuit 53a adjusts the phase of a received signal in the first high-frequency band, which is output by low-noise amplifier 51a. Phase shift circuit 62a is connected to an input end of power amplifier 60a and adjusts the phase of a transmitted signal in the first high-frequency band. Phase shift circuit 63a adjusts the phase of a received signal in the first high-frequency band, which is output by low-noise amplifier 61a.

[0169] Phase shift circuit 52b is connected to an input end of power amplifier 50b and adjusts the phase of a transmitted signal in the second high-frequency band. Phase shift circuit 53b adjusts the phase of a received signal in the second high-frequency band, which is output by low-noise amplifier 51b. Phase shift circuit 62b is connected to an input end of power amplifier 60b and adjusts the phase of a transmitted signal in the second high-frequency band. Phase shift circuit 63b adjusts the phase of a received signal in the second high-frequency band, which is output by low-noise amplifier 61b.

[0170] The power amplifier 50a, an example of the first power amplifier, is connected to the antenna 201V via the switch 54a and amplifies the transmitted signal in the first high-frequency band output by the phase-shifting circuit 52a. The low-noise amplifier 51a amplifies the received signal in the first high-frequency band output by the antenna 201V. The power amplifier 50a includes the first gain transistor. The first gain transistor is arranged in series along a path connecting the phase-shifting circuit 52a and the switch 54a.

[0171] Power amplifier 60a, an example of the second power amplifier, is connected to antenna 201H via switch 64a and amplifies the transmitted signal in the first high-frequency band output by phase-shifting circuit 62a. Low-noise amplifier 61a amplifies the received signal in the first high-frequency band output by antenna 201H. Power amplifier 60a includes the second gain transistor. This second gain transistor is arranged in series along a path connecting phase-shifting circuit 62a and switch 64a.

[0172] Power amplifier 50b, an example of a third power amplifier, is connected to antenna 202V via switch 54b and amplifies the transmitted signal in the second high-frequency band output by phase-shifting circuit 52b. Low-noise amplifier 51b amplifies the received signal in the second high-frequency band output by antenna 202V. Power amplifier 50b includes a third gain transistor. This third gain transistor is arranged in series along a path connecting phase-shifting circuit 52b and switch 54b.

[0173] Power amplifier 60b, an example of a fourth power amplifier, is connected to antenna 202H via switch 64b and amplifies the transmitted signal in the second high-frequency band output by phase-shifting circuit 62b. Low-noise amplifier 61b amplifies the received signal in the second high-frequency band output by antenna 202H. Power amplifier 60b includes a fourth gain transistor. This fourth gain transistor is arranged in series along a path connecting phase-shifting circuit 62b and switch 64b.

[0174] Switch 54a connects the antenna 201V to an output of the power amplifier 50a and the antenna 201V to an input of the low-noise amplifier 51a. Switch 64a connects the antenna 201H to an output of the power amplifier 60a and the antenna 201H to an input of the low-noise amplifier 61a.

[0175] Switch 54b connects the antenna 202V to an output of the power amplifier 50b and the antenna 202V to an input of the low-noise amplifier 51b. Switch 64b connects the antenna 202H to an output of the power amplifier 60b and the antenna 202H to an input of the low-noise amplifier 61b.

[0176] The input terminal 511 is a terminal that is connected to the power amplifier 50a and supplies the power supply voltage V ET1 receives the signal supplied by the follower circuit 4. Input terminal 512 is connected to the power amplifier 60a and supplies the power supply voltage V. ET2 receives the signal supplied by the follower circuit 4. Input terminal 513 is connected to the power amplifier 50b and provides a power supply voltage V. ET3 receives the signal supplied by the follower circuit 4. Input terminal 514 is connected to the power amplifier 60b and provides a power supply voltage V. ET4 receives the signal supplied by the follower circuit 4.

[0177] The first and second high-frequency bands are each either a millimeter wave band or a sub-terahertz band. For example, the first high-frequency band is a 28 GHz band and the second high-frequency band is a 39 GHz band.

[0178] The follower circuit 4 generates supply voltages for the power amplifiers 50a and 60a, which amplify signals in the first high-frequency band, generates supply voltages for the power amplifiers 50b and 60b, which amplify signals in the second high-frequency band, and comprises at least one integrated circuit. Specifically, the follower circuit 4 supplies variable voltages to the power amplifiers in Digital ET mode or SPT mode based on envelope signals supplied by the BBIC.

[0179] Antenna 201V is an example of the first vertical polarization antenna. It vertically polarizes the transmitted signal in the first high-frequency band, output by the high-frequency circuit 6, and radiates the same signal. Antenna 201V outputs a received vertically polarized signal in the first high-frequency band to the high-frequency circuit 6. Antenna 201H is an example of the first horizontal polarization antenna. It horizontally polarizes the transmitted signal in the first high-frequency band, output by the high-frequency circuit 6, and radiates the same signal. Antenna 201H outputs a received horizontally polarized signal in the first high-frequency band to the high-frequency circuit 6.

[0180] Antenna 202V is an example of a second vertical polarization antenna. It vertically polarizes the transmitted signal in the second high-frequency band, output by the high-frequency circuit 6, and radiates the same signal. Antenna 202V outputs a received vertically polarized signal in the second high-frequency band to the high-frequency circuit 6. Antenna 202H is an example of a second horizontal polarization antenna. It horizontally polarizes the transmitted signal in the second high-frequency band, output by the high-frequency circuit 6, and radiates the same signal. Antenna 202H outputs a received horizontally polarized signal in the second high-frequency band to the high-frequency circuit 6. 2.2 Circuit structure of the follower circuit 4

[0181] The follower circuit 4 includes a pre-regulator circuit 10, a switching capacitor circuit 20, supply modulators 31, 32, 33 and 34, a digital control circuit (not illustrated) and output connections 251, 252, 253 and 254.

[0182] The pre-regulator circuit 10 has a circuit structure similar to that of the pre-regulator circuit 10 according to the first embodiment. The switching capacitor circuit 20 has a circuit structure similar to that of the switching capacitor circuit 20 according to the first embodiment.

[0183] Supply modulator 31 is an example of the first supply modulator and is configured to select at least one of the plurality of discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 50a. Supply modulator 32 is an example of the second supply modulator and is configured to select at least one of the plurality of discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 60a.

[0184] Supply modulator 33 is an example of a third supply modulator and is configured to select at least one of the plurality of discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 50b. Supply modulator 34 is an example of a fourth supply modulator and is configured to select at least one of the plurality of discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 60b.

[0185] The supply modulators 31 to 34 each have a circuit structure similar to that of the supply modulator 30A according to the first embodiment.

[0186] The digital control circuit can control the pre-regulator circuit 10, the switching capacitor circuit 20 and the supply modulators 31 to 34 on the basis of digital control signals from the BBIC.

[0187] The follower circuit 4 does not necessarily have to be part of the pre-regulator circuit 10 and the digital control circuit.

[0188] With the above structure, the follower circuit 4 can supply the power amplifier 50a with the power supply voltage V. ET1 from the supply modulator 31, supply the power supply voltage V to the power amplifier 60a ET2 from the supply modulator 32, supply the power supply voltage V to the power amplifier 50b ET3 from the supply modulator 33 and supply the power supply voltage V to the power amplifier 60b ET4 from the supply modulator 34.

[0189] With the above structure of the high-frequency circuit 6, the majority of discrete voltages to be supplied to the power amplifiers 50a, 50b, 60a and 60b are generated by the same switching capacitor circuit 20. Thus, the follower circuit 4 can be miniaturized, resulting in a small-format high-frequency circuit 6 including the power amplification system in ET mode.

[0190] Supply modulator 31 can select at least one of the plurality of discrete voltages according to a DCL signal (DCL1: first parallel data signal). Supply modulator 32 can select at least one of the plurality of discrete voltages according to a DCL signal (DCL2: second parallel data signal). Supply modulator 33 can select at least one of the plurality of discrete voltages according to a DCL signal (DCL3: third parallel data signal). Supply modulator 34 can select at least one of the plurality of discrete voltages according to a DCL signal (DCL4: fourth parallel data signal).

[0191] This means that the supply modulators 31 to 34 can individually supply power supply voltages to the power amplifiers 50a, 50b, 60a, and 60b by controlling them based on the different DCL signals (DCL1 to DCL4). Thus, the power supply voltages to the power amplifiers 50a, 50b, 60a, and 60b can be optimized. Therefore, the distortion characteristics of the power amplifiers 50a, 50b, 60a, and 60b can be optimized. If the power amplifiers 50a, 50b, 60a, and 60b are operated using MIMO, the parameters of DPD circuits located upstream of the power amplifiers 50a, 50b, 60a, and 60b can be individually adjusted. Therefore, the communication throughput can be improved.

[0192] Supply modulators 31 and 32 can be controlled based on the same DCL signal (e.g., DCL1), and supply modulators 33 and 34 can be controlled based on the same DCL signal (e.g., DCL3). In this case, the same reference signal is transmitted by antennas 201V and 201H, and the same reference signal is transmitted by antennas 202V and 202H. Therefore, optimal communication conditions can be maintained, thus improving communication coverage. 2.3 Assembly example of a high-frequency module 1C according to example 3

[0193] Next, a high-frequency module 1C will be used according to Example 3 with reference to Fig. 9 is described as an assembly example of the high-frequency circuit 6.

[0194] Fig. Figure 9 is a cross-sectional view of the high-frequency module 1C according to Example 3. Fig. Figure 9 is an illustration of a portion of the wires connecting a plurality of circuit components arranged on the module laminate 90, omitted. Fig. Figure 9 is an illustration of a shielding electrode layer covering the surface of the resin component 91, omitted. The resin component 91 and the shielding electrode layer can be omitted.

[0195] As in Fig. As illustrated in Figure 9, the high-frequency module 1C comprises the module laminate 90, an integrated circuit 80C, and an RFIC 5. The high-frequency module 1C according to this example differs from the high-frequency module 1A according to Example 1 only with regard to the structures of the integrated circuit 80C and the RFIC 5. Therefore, the following description of the high-frequency module 1C according to this example does not describe the same structure as that of the high-frequency module 1A according to Example 1; instead, the main focus is on describing different structures.

[0196] The integrated circuit 80C is an example of the first integrated circuit and is one selected from the integrated circuits that form the follower circuit 4. The integrated circuit 80C is arranged on the main surface 90a of the module laminate 90 and comprises the PR switch section 10S, the SC switch section 20S, SM switch sections 31S, 32S, 33S, and 34S, a digital control section, and the output terminals 251 to 254. The PR switch section 10S includes switches S61, S62, S71, and S72 of the pre-regulator circuit 10 of the high-frequency circuit 6. The SC switch section 20S includes switches S11 to S14, S21 to S24, S31 to S34, and S41 to S44 of the switching capacitor circuit 20 of the high-frequency circuit 6. The SM switch section 31S includes the switches of the supply modulator 31 of the high-frequency circuit 6. The SM switch section 32S includes the switches of the supply modulator 32 of the high-frequency circuit 6.The SM switch section 33S comprises the switches of the supply modulator 33 of the high-frequency circuit 6. The SM switch section 34S comprises the switches of the supply modulator 34 of the high-frequency circuit 6. The digital control section comprises the digital control circuit of the high-frequency circuit 6.

[0197] Output terminal 251 is an example of the first output terminal and is connected to power amplifier 50a. Output terminal 252 is an example of the second output terminal and is connected to power amplifier 60a. Output terminal 253 is an example of a third output terminal and is connected to power amplifier 50b. Output terminal 254 is an example of a fourth output terminal and is connected to power amplifier 60b.

[0198] The integrated circuit 80C includes at least one switch contained in the switching capacitor circuit 20 and at least one switch contained in each of the supply modulators 31 to 34, and does not necessarily have to include the PR switch section 10S and the digital control section.

[0199] The 80C integrated circuit, for example, consists of a CMOS component and can be manufactured using a SOI process. The 80C integrated circuit is not limited to CMOS.

[0200] Although an illustration in Fig. With the omission of 9, the high-frequency module 1C further comprises the capacitor C61 and the power inductor L71, which are included in the pre-regulator circuit 10, and the capacitors C11 to C16 and the capacitors C10 to C40, which are included in the switching capacitor circuit 20.

[0201] Capacitor C61, power inductor L71, capacitors C11 to C16, and capacitors C10 to C40 are arranged on the main surface 90a. Power inductor L71 can be located outside the high-frequency module 1C.

[0202] The integrated circuit 80C, the capacitor C61, the power inductor L71, the capacitors C11 to C16 and / or the capacitors C10 to C40 can be arranged within the module laminate 90 or on the main surface facing the main surface 90a.

[0203] RFIC 5 is an example of a fourth integrated circuit and has the same circuit structure as RFIC 5 of the high-frequency circuit 6. RFIC 5 is located on the main surface 90a of the module laminate 90. RFIC 5 does not necessarily include the low-noise amplifiers 51a, 51b, 61a and 61b, the phase-shifting circuits 53a, 53b, 63a and 63b, and the switches 54a, 54b, 64a and 64b.

[0204] The RFIC 5, for example, consists of GaAs, SiGe, and / or GaN. The RFIC 5 can be made of Si or CMOS and can be manufactured, in particular, using a SOI process.

[0205] With the above structure of the high-frequency module 1C, the majority of discrete voltages to be supplied to the power amplifiers 50a, 50b, 60a and 60b are generated by the same switching capacitor circuit 20. The switches of the follower circuit 4 are integrated into the integrated circuit 80C. Thus, the high-frequency module 1C, including the follower circuit 4, can be miniaturized.

[0206] In the high-frequency module 1C according to this example, the integrated circuit 80C is arranged to be adjacent to the RFIC 5.

[0207] Since the integrated circuit 80C is arranged to be adjacent to the RFIC 5, the high-frequency module 1C can be miniaturized. As shown in Fig. As illustrated in Figure 9, wire 404, connecting output pin 251 of integrated circuit 80C and input pin 511 of RFIC 5, can be shortened, and wire 403, connecting output pin 253 of integrated circuit 80C and input pin 513 of RFIC 5, can also be shortened. Although not shown in Figure 9, wire 404, connecting output pin 252 of integrated circuit 80C and input pin 512 of RFIC 5, and wire 403, connecting output pin 254 of integrated circuit 80C and input pin 514 of RFIC 5, can also be shortened. This will suppress ringing in the power supply voltages fed to power amplifiers 50a, 50b, 60a, and 60b, etc., from the follower circuit 4, thus achieving stability. Therefore, the efficiency of the follower circuit 4 can be improved.

[0208] Wire 403 can be shorter than wire 404. Therefore, it is possible, for example, to prevent ringing of the power supply voltage V. ET3 , which is to be supplied to the power amplifier 50b, which amplifies the high-frequency signal in the second high-frequency band on the higher-frequency side relative to the first high-frequency band, to suppress. 2.4 Assembly example of the high-frequency module 1D according to example 4

[0209] Next, a high-frequency module 1D will be used according to Example 4 with reference to Fig. 10 is described as an assembly example of the high-frequency circuit 6.

[0210] Fig. Figure 10 is a cross-sectional view of the 1D high-frequency module according to Example 4. Fig. Figure 10 is an illustration of a portion of the wires connecting the majority of circuit components arranged on module laminate 90, omitted. Fig. Figure 10 is an illustration of shielding electrode layers covering the surfaces of the resin components 91 and 92, omitted. The resin components 91 and 92 and the shielding electrode layers can be omitted.

[0211] As in Fig. As illustrated in Figure 10, the high-frequency module 1D comprises the module laminate 90, the integrated circuit 80C, and the RFIC 5. The high-frequency module 1D according to this example differs from the high-frequency module 1C according to Example 3 in that the integrated circuit 80C and the RFIC 5 are arranged separately on both main surfaces of the module laminate 90. Therefore, the following description of the high-frequency module 1D according to this example does not describe the same structure as that of the high-frequency module 1C according to Example 3; rather, the main focus is on describing different structures.

[0212] The module laminate 90 has the main surfaces 90a (first main surface) and 90b (second main surface) facing each other.

[0213] The RFIC 5 is located on the main surface 90a. The integrated circuit 80C is located on the main surface 90b.

[0214] In a top view of the main surfaces 90a and 90b, the first gain transistor of the power amplifier 50a overlaps the integrated circuit 80C at least partially, the second gain transistor of the power amplifier 60a overlaps the integrated circuit 80C at least partially, the third gain transistor of the power amplifier 50b overlaps the integrated circuit 80C at least partially, and the fourth gain transistor of the power amplifier 60b overlaps the integrated circuit 80C at least partially.

[0215] Since the integrated circuit 80C and the RFIC 5 are arranged separately on both main surfaces of the module laminate 90, the high-frequency module 1D can be miniaturized. As shown in Fig. As illustrated in Figure 10, wire 405, which connects the output terminal 251 of the integrated circuit 80C and the input terminal 511 of the RFIC 5, can be shortened, and wire 406, which connects the output terminal 253 of the integrated circuit 80C and the input terminal 513 of the RFIC 5, can be shortened. Although not shown in Figure 10, wire 405, which connects the output terminal 252 of the integrated circuit 80C and the input terminal 512 of the RFIC 5, can be shortened, and wire 406, which connects the output terminal 254 of the integrated circuit 80C and the input terminal 514 of the RFIC 5, can also be shortened. This will suppress ringing in the power supply voltages fed to the power amplifiers 50a, 50b, 60a, and 60b, etc., from the follower circuit 4, thus achieving stability. Therefore, the efficiency of the follower circuit 4 can be improved. 2.5 Circuit structure of the high-frequency circuit 7 according to modification 1

[0216] Next, the circuit structure of a high-frequency circuit 7 according to modification 1 of this embodiment is described.

[0217] Fig. Figure 11 is a circuit diagram of the high-frequency circuit 7 according to modification 1 of the second embodiment. The high-frequency circuit 7 comprises the tracker circuit 4 and RFICs 5A and 5B. The high-frequency circuit 7 according to this modification differs from the high-frequency circuit 6 according to the second embodiment in that the RFIC 5 is subdivided into RFICs 5A and 5B. With regard to the high-frequency circuit 7 according to this modification, the following description does not refer to the same structure as that of the high-frequency circuit 6 according to the second embodiment, but rather focuses on the main differences between the two.

[0218] The RFIC 5A is an example of a fifth integrated circuit, comprising the phase-shifting circuits 52a, 53a, 62a and 63a, the power amplifiers 50a and 60a, the low-noise amplifiers 51a and 61a, the switches 54a and 64a and the input terminals 511 and 512, and is configured to output signals in the first high-frequency band to the antennas 201V and 201H.

[0219] The RFIC 5B is an example of a sixth integrated circuit, comprising the phase-shift circuits 52b, 53b, 62b and 63b, the power amplifiers 50b and 60b, the low-noise amplifiers 51b and 61b, the switches 54b and 64b, and the input terminals 513 and 514, and is configured to output signals in the second high-frequency band on the higher-frequency side relative to the first high-frequency band to the antennas 202V and 202H.

[0220] With the above structure of the high-frequency circuit 7, the majority of discrete voltages to be supplied to the power amplifiers 50a, 50b, 60a and 60b are generated by the same switching capacitor circuit 20. Thus, the follower circuit 4 can be miniaturized, resulting in a compact high-frequency circuit 7 including the power amplification system in ET mode. 2.6 Assembly example of a high-frequency module 1E according to example 5

[0221] Next, a high-frequency module 1E will be used according to Example 5 with reference to Fig. 12 is described as an assembly example of the high-frequency circuit 7.

[0222] Fig. Figure 12 is a cross-sectional view of the high-frequency module 1E according to Example 5. Fig. Figure 12 is an illustration of a portion of the wires connecting a plurality of circuit components arranged on module laminate 90, omitted. Fig. Figure 12 is an illustration of a shielding electrode layer covering the surface of the resin component 91, omitted. The resin component 91 and the shielding electrode layer can be omitted.

[0223] As in Fig. As illustrated in Figure 12, the high-frequency module 1E comprises the module laminate 90, an integrated circuit 80E, and RFICs 5A and 5B. The high-frequency module 1E according to this example differs from the high-frequency module 1C according to Example 3 with respect to the structure in which the integrated circuit 80E is arranged between RFICs 5A and 5B. Therefore, the following description of the high-frequency module 1E according to this example does not describe the same structure as that of the high-frequency module 1C according to Example 3, but rather focuses on the main differences between the two.

[0224] The 80E integrated circuit is an example of the first integrated circuit and is one of the integrated circuits that form the follower circuit 4. The integrated circuit 80E is arranged on the main surface 90a of the module laminate 90 and comprises the PR switch section 10S, the SC switch section 20S, the SM switch sections 31S, 32S, 33S, and 34S, a digital control section, and the output terminals 251 to 254. The PR switch section 10S includes switches S61, S62, S71, and S72 of the pre-regulator circuit 10 of the high-frequency circuit 7. The SC switch section 20S includes switches S11 to S14, S21 to S24, S31 to S34, and S41 to S44 of the switching capacitor circuit 20 of the high-frequency circuit 7. The SM switch section 31S includes the switches of the supply modulator 31 of the high-frequency circuit 7. The SM switch section 32S includes the switches of the Supply modulator 32 of the high-frequency circuit 7.The SM switch section 33S comprises the switches of the supply modulator 33 of the high-frequency circuit 7. The SM switch section 34S comprises the switches of the supply modulator 34 of the high-frequency circuit 7. The digital control section comprises the digital control circuit of the high-frequency circuit 7.

[0225] Output terminal 251 is an example of the first output terminal and is connected to power amplifier 50a. Output terminal 252 is an example of the second output terminal and is connected to power amplifier 60a. Output terminal 253 is an example of the third output terminal and is connected to power amplifier 50b. Output terminal 254 is an example of the fourth output terminal and is connected to power amplifier 60b.

[0226] The integrated circuit 80E includes at least one switch contained in the switching capacitor circuit 20 and at least one switch contained in each of the supply modulators 31 to 34, and does not necessarily have to include the PR switch section 10S and the digital control section.

[0227] The 80E integrated circuit, for example, consists of a CMOS component and can be manufactured using a SOI process. The 80E integrated circuit is not limited to CMOS.

[0228] Although an illustration in Fig. If 12 is omitted, the high-frequency module 1E further comprises the capacitor C61 and the power inductor L71, which are included in the pre-regulator circuit 10, and the capacitors C11 to C16 and the capacitors C10 to C40, which are included in the switching capacitor circuit 20.

[0229] Capacitor C61, power inductor L71, capacitors C11 to C16, and capacitors C10 to C40 are arranged on the main surface 90a. Power inductor L71 can be located outside the high-frequency module 1E.

[0230] The integrated circuit 80E, the capacitor C61, the power inductor L71, the capacitors C11 to C16 and / or the capacitors C10 to C40 can be arranged within the module laminate 90 or on the main surface facing the main surface 90a.

[0231] The RFIC 5A is an example of the fifth integrated circuit and has the same circuit structure as the RFIC 5A of the high-frequency circuit 7. The RFIC 5A is located on the main surface 90a of the module laminate 90. The RFIC 5A does not necessarily include the low-noise amplifiers 51a and 61a, the phase-shifting circuits 53a and 63a, and the switches 54a and 64a.

[0232] The RFIC 5B is an example of the sixth integrated circuit and has the same circuit structure as the RFIC 5B of the high-frequency circuit 7. The RFIC 5B is located on the main surface 90a of the module laminate 90. The RFIC 5B does not necessarily include the low-noise amplifiers 51b and 61b, the phase-shifting circuits 53b and 63b, and the switches 54b and 64b.

[0233] RFICs 5A and 5B are each made of materials such as GaAs, SiGe, and / or GaN. RFICs 5A and 5B can each be made of Si or CMOS and can be manufactured, in particular, using a SOI process.

[0234] As in Fig. As illustrated in Figure 12, in a top view of the main surface 90a, the integrated circuit 80E is arranged between the RFIC 5A and the RFIC 5B, and the integrated circuit 80E is arranged to be adjacent to the RFIC 5A and is arranged to be adjacent to the RFIC 5B.

[0235] Since the integrated circuit 80E is arranged to be adjacent to the RFIC 5A, and the integrated circuit 80E is arranged to be adjacent to the RFIC 5B, the high-frequency module 1E can be miniaturized. As shown in Fig. As illustrated in Figure 12, wire 407, which connects the output terminal 251 of the integrated circuit 80E and the input terminal 511 of the RFIC 5A, can be shortened, and wire 408, which connects the output terminal 253 of the integrated circuit 80E and the input terminal 513 of the RFIC 5B, can be shortened. Although not shown in Figure 12, wire 407, which connects the output terminal 252 of the integrated circuit 80E and the input terminal 512 of the RFIC 5A, can be shortened, and wire 408, which connects the output terminal 254 of the integrated circuit 80E and the input terminal 514 of the RFIC 5B, can be shortened. This will suppress ringing in the power supply voltages fed to the power amplifiers 50a, 50b, 60a, and 60b, etc., from the follower circuit 4, thus achieving stability. Therefore, the efficiency of the follower circuit 4 can be improved. 2.7 Assembly example of a high-frequency module 1F according to example 6

[0236] Next, a high-frequency module 1F will be used according to Example 6 with reference to Fig. 13 is described as an assembly example of the high-frequency circuit 7.

[0237] Fig. Figure 13 is a cross-sectional view of the high-frequency module 1F according to Example 6. Fig. Figure 13 is an illustration of a portion of the wires connecting the majority of circuit components arranged on module laminate 90, omitted. Fig. Figure 13 is an illustration of shielding electrode layers covering the surfaces of the resin components 91 and 92, omitted. The resin components 91 and 92 and the shielding electrode layers can be omitted.

[0238] As in Fig. As illustrated in Figure 13, the high-frequency module 1F comprises the module laminate 90, an integrated circuit 80F, and the RFICs 5A and 5B. The high-frequency module 1F according to this example differs from the high-frequency module 1E according to Example 5 in that the integrated circuit 80F and the RFICs 5A and 5B are arranged separately on both main surfaces of the module laminate 90. Therefore, the structure of the high-frequency module 1F according to this example is not the same as that of the high-frequency module 1E according to Example 5; rather, the main focus is on describing different structures.

[0239] The module laminate 90 has the main surfaces 90a (first main surface) and 90b (second main surfaces) facing each other.

[0240] RFICs 5A and 5B are located on the main surface 90a. Integrated circuit 80F is located on the main surface 90b.

[0241] In a top view of the main surfaces 90a and 90b, the first gain transistor of the power amplifier 50a overlaps the integrated circuit 80F at least partially, the second gain transistor of the power amplifier 60a overlaps the integrated circuit 80F at least partially, the third gain transistor of the power amplifier 50b overlaps the integrated circuit 80F at least partially, and the fourth gain transistor of the power amplifier 60b overlaps the integrated circuit 80F at least partially.

[0242] Since the integrated circuit 80F and the RFICs 5A and 5B are arranged separately on both main surfaces of the module laminate 90, the high-frequency module 1F can be reduced in size. As shown in Fig. As illustrated in Figure 13, wire 409, which connects the output terminal 251 of the 80F integrated circuit and the input terminal 511 of the RFIC 5A, can be shortened, and wire 410, which connects the output terminal 253 of the 80F integrated circuit and the input terminal 513 of the RFIC 5B, can be shortened. Although not illustrated, wire 410, which connects the output terminal 252 of the 80F integrated circuit and the input terminal 512 of the RFIC 5A, and wire 410, which connects the output terminal 254 of the 80F integrated circuit and the input terminal 514 of the RFIC 5B, can be shortened. This will suppress ringing in the power supply voltages fed to the power amplifiers 50a, 50b, 60a, and 60b, etc., from the follower circuit 4, thus achieving stability. Therefore, the efficiency of the follower circuit 4 can be improved. 2.8 Circuit structure of a high-frequency circuit 7A according to modification 2

[0243] Next, the circuit structure of a high-frequency circuit 7A according to modification 2 of this embodiment will be described.

[0244] Fig.Figure 14 is a circuit diagram of the high-frequency circuit 7A according to modification 2 of the second embodiment. The high-frequency circuit 7A comprises a tracker circuit 4A, the RFIC 5, and a PAIC 8. The high-frequency circuit 7A according to this modification differs from the high-frequency circuit 6 according to the second embodiment with regard to the addition of the PAIC 8 and the circuit structure of the tracker circuit 4A. Therefore, the following description of the high-frequency circuit 7A according to this modification does not describe the same structure as that of the high-frequency circuit 6 according to the second embodiment, but rather focuses on the main differences between the two.

[0245] The PAIC 8 is an example of a power amplifier circuit and comprises a power amplifier 70, a low-noise amplifier 71, and a switch 74. The PAIC 8 amplifies a high-frequency signal in a frequency band belonging to a sub-6 band (6 GHz or less), outputs the amplified high-frequency signal in the sub-6 band to an antenna 203, and amplifies a high-frequency signal in the sub-6 band (6 GHz or less) received by the antenna 203.

[0246] The frequency band in the sub-6 band is a frequency band that has been predefined by a standards organization (e.g. 3GPP (registered trademark) or IEEE) for communication systems built using the RAT.

[0247] Power amplifier 70, an example of a fifth power amplifier, is connected to antenna 203 via switch 74 and amplifies the high-frequency signal in the sub-6 band. Low-noise amplifier 71 amplifies the high-frequency signal in the sub-6 band output by antenna 203.

[0248] Switch 74 switches the connection between antenna 203 and an output end of the power amplifier 70 and the connection between antenna 203 and an input end of the low-noise amplifier 71.

[0249] The PAIC 8 can be an integrated circuit. The PAIC 8 includes the power amplifier 70 and does not necessarily have to include the low-noise amplifier 71 and the switch 74.

[0250] Antenna 203 is an example of a first antenna and radiates the transmit signal in the sub-6 band, which is output by the high-frequency circuit 7A. Antenna 203 outputs a received signal in the sub-6 band to the high-frequency circuit 7A.

[0251] The follower circuit 4A generates supply voltages for power amplifiers 50a and 60a, which amplify signals in the first high-frequency band; generates supply voltages for power amplifiers 50b and 60b, which amplify signals in the second high-frequency band; generates a supply voltage for power amplifier 70, which amplifies signals in the sub-6-band; and contains at least one integrated circuit. Specifically, the follower circuit 4A supplies variable voltages to the power amplifiers in digital ET mode or SPT mode based on envelope signals supplied by the BBIC.

[0252] The follower circuit 4A includes a pre-regulator circuit 10, a switching capacitor circuit 20, supply modulators 31, 32, 33, 34, and 35, a digital control circuit (not illustrated), and output terminals 251, 252, 253, and 254.

[0253] The pre-regulator circuit 10 has a circuit structure similar to that of the pre-regulator circuit 10 according to the second embodiment. The switching capacitor circuit 20 has a circuit structure similar to that of the switching capacitor circuit 20 according to the second embodiment.

[0254] Power supply modulator 31 is an example of the first power supply modulator and has a circuit structure similar to that of power supply modulator 31 according to the second embodiment. Power supply modulator 32 is an example of the second power supply modulator and has a circuit structure similar to that of power supply modulator 32 according to the second embodiment. Power supply modulator 33 is an example of the third power supply modulator and has a circuit structure similar to that of power supply modulator 33 according to the second embodiment. Power supply modulator 34 is an example of the fourth power supply modulator and has a circuit structure similar to that of power supply modulator 34 according to the second embodiment. The digital control circuit has a circuit structure similar to that of the digital control circuit according to the second embodiment.

[0255] The supply modulator 35 is an example of a fifth supply modulator and is configured to select at least one of the plurality of discrete voltages generated by the switching capacitor circuit 20 and output it to the power amplifier 70.

[0256] With the above structure of the high-frequency circuit 7A, the majority of discrete voltages to be supplied to the power amplifiers 50a, 50b, 60a, 60b and 70 are generated by the same switching capacitor circuit 20. Thus, the follower circuit 4A can be miniaturized, resulting in a compact high-frequency circuit 7A including the power amplification system in ET mode. 2.9 Effects etc.

[0257] As described above, the high-frequency circuit 6 according to this embodiment comprises the power amplifier 50a, which is connected to the antenna 201V, the power amplifier 60a, which is connected to the antenna 201H, the power amplifier 50b, which is connected to the antenna 202V, the power amplifier 60b, which is connected to the antenna 202H, the switching capacitor circuit 20, which is configured to generate the plurality of discrete voltages based on the input voltage, the supply modulator 31, which is configured to selectively output at least one of the plurality of discrete voltages to the power amplifier 50a, the supply modulator 32, which is configured to selectively output at least one of the plurality of discrete voltages to the power amplifier 60a, and the supply modulator 33, which is configured toThe power amplifier 50b is configured to selectively output at least one of the majority of discrete voltages to the power amplifier 50b, and the supply modulator 34 is configured to selectively output at least one of the majority of discrete voltages to the power amplifier 60b. The power amplifiers 50a and 60a are configured to amplify the high-frequency signals in the first high-frequency band. The power amplifiers 50b and 60b are configured to amplify the high-frequency signals in the second high-frequency band on the higher-frequency side relative to the first high-frequency band.

[0258] In the above embodiment, the majority of discrete voltages to be supplied to the power amplifiers 50a, 50b, 60a and 60b are generated by the same switching capacitor circuit 20. Thus, the follower circuit 4 can be miniaturized, providing a small-format high-frequency circuit 6 including the power amplification system in ET mode.

[0259] For example, in the high-frequency circuit 6, the supply modulator 31 is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal. The supply modulator 32 is configured to select at least one of the plurality of discrete voltages according to the second parallel data signal, which differs from the first parallel data signal. The supply modulator 33 is configured to select at least one of the plurality of discrete voltages according to the third parallel data signal, which differs from the first and second parallel data signals. The supply modulator 34 is configured to select at least one of the plurality of discrete voltages according to the fourth parallel data signal, which differs from the first, second, and third parallel data signals.

[0260] In the above configuration, the power supply voltages to the power amplifiers 50a, 50b, 60a, and 60b can be optimized. Therefore, the distortion characteristics of the power amplifiers 50a, 50b, 60a, and 60b can be optimized. If the power amplifiers 50a, 50b, 60a, and 60b are operated using MIMO, the parameters of the DPD circuits located upstream of the power amplifiers 50a, 50b, 60a, and 60b can be individually adjusted. Therefore, the communication throughput can be improved.

[0261] In the high-frequency circuit 6, for example, the supply modulator 31 is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal. The supply modulator 32 is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal. The supply modulator 33 is configured to select at least one of the plurality of discrete voltages according to the third parallel data signal, which differs from the first parallel data signal. The supply modulator 34 is configured to select at least one of the plurality of discrete voltages according to the third parallel data signal.

[0262] In the above configuration, the same reference signal is transmitted by antennas 201V and 201H, and the same reference signal is transmitted by antennas 202V and 202H. Therefore, optimal communication conditions can be maintained. This allows for improved communication coverage.

[0263] For example, the high-frequency circuit 7A according to modification 2 of the second embodiment further comprises the power amplifier 70, which is connected to the antenna 203, and the supply modulator 35, which is configured to selectively output at least one of the plurality of discrete voltages to the power amplifier 70. The power amplifier 70 is configured to amplify the high-frequency signal in the sub-6-band. The first high-frequency band and the second high-frequency band are, respectively, the millimeter-wave band and the sub-terahertz band.

[0264] In the above embodiment, the majority of discrete voltages to be supplied to the power amplifiers 50a, 50b, 60a, 60b and 70 are generated by the same switching capacitor circuit 20. Thus, the follower circuit 4A can be miniaturized, providing a small-format high-frequency circuit 7A including the power amplification system in ET mode.

[0265] The high-frequency module 1C according to Example 3 (and the high-frequency module 1D according to Example 4) comprises the module laminate 90, the integrated circuit 80C arranged on the module laminate 90, and the RFIC 5. The RFIC 5 comprises the power amplifier 50a connected to antenna 201V, the power amplifier 60a connected to antenna 201H, the power amplifier 50b connected to antenna 202V, and the power amplifier 60b connected to antenna 202H. The integrated circuit 80C comprises at least one switch included in the switching capacitor circuit 20 and at least one switch included in each of the supply modulators 31 to 34. The switching capacitor circuit 20 is configured to generate the majority of discrete voltages based on the input voltage and to output the majority of generated discrete voltages to the supply modulators 31 to 34.Output 251 of supply modulator 31, contained in integrated circuit 80C, is connected to power amplifier 50a. Output 252 of supply modulator 32, contained in integrated circuit 80C, is connected to power amplifier 60a. Output 253 of supply modulator 33, contained in integrated circuit 80C, is connected to power amplifier 50b. Output 254 of supply modulator 34, contained in integrated circuit 80C, is connected to power amplifier 60b. Power amplifiers 50a and 60a are configured to amplify the high-frequency signals in the first high-frequency band. Power amplifiers 50b and 60b are configured to amplify the high-frequency signals in the second high-frequency band on the higher-frequency side relative to the first high-frequency band.

[0266] In the above embodiment, the majority of discrete voltages supplied to the power amplifiers 50a, 50b, 60a, and 60b are generated by the same switching capacitor circuit 20. The switches of the follower circuit 4 are integrated into the integrated circuit 80C. Thus, the high-frequency module 1C, including the follower circuit 4, can be miniaturized.

[0267] For example, in the high-frequency module 1C, the integrated circuit 80C and the RFIC 5 are arranged on the main surface 90a, and the integrated circuit 80C is arranged to be adjacent to the RFIC 5.

[0268] In the above embodiment, the integrated circuit 80C is arranged to be adjacent to the RFIC 5. Therefore, the RF module 1C can be reduced in size. Wire 404, which connects the output terminal 251 of the integrated circuit 80C and the input terminal 511 of the RFIC 5, can be shortened. Wire 403, which connects the output terminal 253 of the integrated circuit 80C and the input terminal 513 of the RFIC 5, can be shortened. Wire 252, which connects the output terminal 252 of the integrated circuit 80C and the input terminal 512 of the RFIC 5, can be shortened. Wire 254, which connects the output terminal 254 of the integrated circuit 80C and the input terminal 514 of the RFIC 5, can be shortened. Thus, ringing of the power supply voltages, which are to be supplied to the power amplifiers 50a, 50b, 60a and 60b etc. from the follower circuit 4, can be suppressed in order to achieve stability.Therefore, the efficiency of the follower circuit 4 can be improved.

[0269] For example, in the high-frequency module 1D, the module laminate 90 has main surfaces 90a and 90b facing each other. The RFIC 5 is located on main surface 90a. The integrated circuit 80C is located on main surface 90b. In a top view of main surfaces 90a and 90b, the gain transistor of power amplifier 50a overlaps at least partially the integrated circuit 80C, the gain transistor of power amplifier 60a overlaps at least partially the integrated circuit 80C, the gain transistor of power amplifier 50b overlaps at least partially the integrated circuit 80C, and the gain transistor of power amplifier 60b overlaps at least partially the integrated circuit 80C.

[0270] In the above embodiment, the integrated circuit 80C and the RFIC 5 are arranged separately on both main surfaces of the module laminate 90. Therefore, the high-frequency module 1D can be reduced in size. The wire 405, which connects the output terminal 251 of the integrated circuit 80C and the input terminal 511 of the RFIC 5, can be shortened. The wire 406, which connects the output terminal 253 of the integrated circuit 80C and the input terminal 513 of the RFIC 5, can be shortened. The wire connecting the output terminal 252 of the integrated circuit 80C and the input terminal 512 of the RFIC 5 can be shortened. The wire connecting the output terminal 254 of the integrated circuit 80C and the input terminal 514 of the RFIC 5 can be shortened. Thus, ringing of the power supply voltages, which are to be supplied to the power amplifiers 50a, 50b, 60a and 60b from the follower circuit 4, etc., can be suppressed in order to achieve stability.Therefore, the efficiency of the follower circuit 4 can be improved.

[0271] The high-frequency module 1E according to Example 5 (and the high-frequency module 1F according to Example 6) further comprises RFICs 5A and 5B, which are arranged on the module laminate 90. RFIC 5A comprises power amplifiers 50a and 60a. RFIC 5B comprises power amplifier 50b, which is connected to antenna 202V, and power amplifier 60b, which is connected to antenna 202H. The integrated circuit 80E further comprises at least one switch included in the supply modulator 33 and at least one switch included in the supply modulator 34. The switching capacitor circuit 20 is configured to output the plurality of discrete voltages to the supply modulators 31 to 34. The output terminal 253 of the supply modulator 33, which is included in the integrated circuit 80E, is connected to the power amplifier 50b.The output terminal 254 of the supply modulator 34, which is contained in the integrated circuit 80E, is connected to the power amplifier 60b. The power amplifiers 50a and 60a are configured to amplify the high-frequency signals in the first frequency band. The power amplifiers 50b and 60b are configured to amplify the high-frequency signals in the second high-frequency band on the higher-frequency side relative to the first high-frequency band.

[0272] In the above embodiment, the integrated circuit 80E and the RFICs 5A and 5B are arranged on the single module laminate 90. Therefore, the high-frequency module 1E (and 1F), including the power amplifiers 50a, 50b, 60a and 60b, can be miniaturized.

[0273] For example, in the high-frequency module 1E, the integrated circuit 80E and the RFICs 5A and 5B are arranged on the main surface 90a of the module laminate 90. In a top view of the main surface 90a, the integrated circuit 80E is located between the RFIC 5A and the RFIC 5B, and the integrated circuit 80E is arranged to be adjacent to the RFIC 5A and to be adjacent to the RFIC 5B.

[0274] In the above configuration, the 80E integrated circuit is configured to connect adjacent to the 5A RFIC, and the 80E integrated circuit is configured to connect adjacent to the 5B RFIC. Therefore, the 1E RF module can be reduced in size. Wire 407, which connects output pin 251 of the 80E integrated circuit to input pin 511 of the 5A RFIC, can be shortened. Wire 408, which connects output pin 253 of the 80E integrated circuit to input pin 513 of the 5B RFIC, can be shortened, as can the wire connecting output pin 252 of the 80E integrated circuit to input pin 512 of the 5A RFIC. Wire connecting output pin 254 of the 80E integrated circuit to input pin 514 of the 5B RFIC, can be shortened. Thus, a ringing of the power supply voltages, which supply the power amplifiers 50a, 50b, 60a and 60b etc., can be avoided.Signals to be supplied by the follower circuit 4 are suppressed to achieve stability. Therefore, the efficiency of the follower circuit 4 can be improved.

[0275] In the high-frequency module 1F, for example, the module laminate 90 has main surfaces 90a and 90b facing each other. RFICs 5A and 5B are located on main surface 90a. Integrated circuit 80F is located on main surface 90b. In a top view of main surfaces 90a and 90b, the gain transistor of power amplifier 50a overlaps at least partially with integrated circuit 80F. The gain transistor of power amplifier 60a overlaps at least partially with integrated circuit 80F. The gain transistor of power amplifier 50b overlaps at least partially with integrated circuit 80F, and the gain transistor of power amplifier 60b overlaps at least partially with integrated circuit 80F.

[0276] In the above embodiment, the 80F integrated circuit and the 5A and 5B RFICs are arranged separately on both main surfaces of the 90 module laminate. Therefore, the 1F frequency module can be reduced in size. Wire 409, which connects the output terminal 251 of the 80F integrated circuit and the input terminal 511 of the 5A RFIC, can be shortened. Wire 410, which connects the output terminal 253 of the 80F integrated circuit and the input terminal 513 of the 5B RFIC, can be shortened. Wire 252, which connects the output terminal 252 of the 80F integrated circuit and the input terminal 512 of the 5A RFIC, can be shortened. Wire 254, which connects the output terminal 254 of the 80F integrated circuit and the input terminal 514 of the 5B RFIC, can be shortened. Thus, a ringing of the power supply voltages, which supply the power amplifiers 50a, 50b, 60a and 60b etc., can be avoided.Signals to be supplied by the follower circuit 4 are suppressed to achieve stability. Therefore, the efficiency of the follower circuit 4 can be improved.

[0277] For example, in the high-frequency modules 1C to 1F, the first high-frequency band and the second high-frequency band are the millimeter wave band and the sub-terahertz band, respectively.

[0278] In the above design, it is possible to provide small format high-frequency modules 1C to 1F that can amplify the high-frequency signals in the millimeter wave band or the sub-terahertz band in ET mode. Other examples of implementation

[0279] Although the high-frequency circuit, the high-frequency module, and the high-frequency signal transmission method according to the present invention have been described above based on the exemplary embodiments, the high-frequency circuit, the high-frequency module, and the high-frequency signal transmission method according to the present invention are not limited to the above exemplary embodiments. The present invention encompasses other exemplary embodiments, which are implemented by combining any components in the above exemplary embodiments, different modifications with respect to the above exemplary embodiments, which are apparent to those skilled in the art, without departing from the essence of the present invention, and different devices, including the high-frequency circuit and the high-frequency module.

[0280] For example, in the circuit structures of the high-frequency circuits and the high-frequency modules according to the above embodiments, any other circuit element or any other wire can be inserted between the circuit elements disclosed in the drawings or the paths connecting the signal paths.

[0281] The features of the high-frequency circuit, the high-frequency module, and the high-frequency signal transmission method, which have been described above on the basis of embodiments, examples, and modifications, are shown below.

[0282] <1> A high-frequency circuit that includes the following features: a first power amplifier connected to a first vertical polarization antenna; a second power amplifier connected to a first horizontal polarization antenna; a switching capacitor circuit configured to generate a plurality of discrete voltages based on an input voltage; a first supply modulator configured to selectively output at least one of the majority of discrete voltages to the first power amplifier; and a second supply modulator configured to selectively output at least one of the majority of discrete voltages to the second power amplifier.

[0283] <2> The high-frequency circuit according to <1> , where: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; and the second supply modulator is configured to select at least one of the plurality of discrete voltages according to a second parallel data signal that differs from the first parallel data signal.

[0284] <3> The high-frequency circuit according to <1> , where: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; and the second supply modulator is configured to select at least one of the majority of discrete voltages according to the first parallel data signal.

[0285] <4> The high-frequency circuit according to one of <1> until <3> , which further includes the following features: a third power amplifier connected to a second vertical polarization antenna; a fourth power amplifier connected to a second horizontal polarization antenna; a third supply modulator configured to selectively output at least one of the plurality of discrete voltages to the third power amplifier; and a fourth supply modulator configured to selectively output at least one of the plurality of discrete voltages to the fourth power amplifier, wherein: the first power amplifier and the second power amplifier are configured to amplify high-frequency signals in a first high-frequency band; and The third and fourth power amplifiers are configured to amplify high-frequency signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band.

[0286] <5> The high-frequency circuit according to <4> , where: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; the second supply modulator is configured to select at least one of the plurality of discrete voltages according to a second parallel data signal that differs from the first parallel data signal; the third supply modulator is configured to select at least one of the plurality of discrete voltages according to a third parallel data signal that differs from the first parallel data signal and the second parallel data signal; and The fourth supply modulator is configured to select at least one of the plurality of discrete voltages according to a fourth parallel data signal that differs from the first parallel data signal, the second parallel data signal, and the third parallel data signal.

[0287] <6> The high-frequency circuit according to <4> , where: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; the second supply modulator is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal; the third supply modulator is configured to select at least one of the plurality of discrete voltages according to a third parallel data signal that differs from the first parallel data signal; and The fourth supply modulator is configured to select at least one of the majority of discrete voltages according to the third parallel data signal.

[0288] <7> The high-frequency circuit according to <4> , which further includes the following features: a fifth power amplifier connected to a first antenna; and a fifth supply modulator configured to selectively output at least one of the plurality of discrete voltages to the fifth power amplifier, wherein: the fifth power amplifier is configured to amplify a high-frequency signal in a sub-6 band; and The first high-frequency band and the second high-frequency band are each a millimeter wave band or a sub-terahertz band.

[0289] <8> A high-frequency module that includes the following features: a modular laminate; and a first integrated circuit arranged on the module laminate, wherein: the first integrated circuit comprises at least one switch included in a switching capacitor circuit, at least one switch included in a first supply modulator, and at least one switch included in a second supply modulator; The switching capacitor circuit is configured to generate a plurality of discrete voltages based on an input voltage, and to output the plurality of generated discrete voltages to the first supply modulator and the second supply modulator; a first output terminal of the first supply modulator contained in the first integrated circuit is connected to a first power amplifier, which is connected to a first vertical polarization antenna; and a second output terminal of the second supply modulator, which is contained in the first integrated circuit, is connected to a second power amplifier, which is connected to a first horizontal polarization antenna.

[0290] <9> The high-frequency module according to <8> , further comprising a second integrated circuit and a third integrated circuit arranged on the module laminate, wherein: The second integrated circuit includes the following: the first power amplifier; a first phase-shifting circuit connected to one input end of the first power amplifier; and The third integrated circuit comprises the following: the second power amplifier; and a second phase shift circuit connected to one input end of the second power amplifier.

[0291] <10> The high-frequency module according to <9> , where: the first integrated circuit, the second integrated circuit, and the third integrated circuit are arranged on a first main surface of the module laminate; and the first integrated circuit is arranged to be adjacent to the second integrated circuit, and is arranged to be adjacent to the third integrated circuit.

[0292] <11> The high-frequency module according to <9> , where: the modular laminate has a first main surface and a second main surface facing each other; the second integrated circuit and the third integrated circuit are arranged on the first main surface; the first integrated circuit is arranged on the second main surface; and In a top view of the first main surface and the second main surface, a gain transistor of the first power amplifier at least partially overlaps the first integrated circuit, and a gain transistor of the second power amplifier at least partially overlaps the first integrated circuit.

[0293] <12> The high-frequency module according to <8> , further comprising a fourth integrated circuit arranged on the module laminate, wherein: The fourth integrated circuit comprises the following: the first power amplifier; the second power amplifier; a third power amplifier connected to a second vertical polarization antenna; and a fourth power amplifier connected to a second horizontal polarization antenna; the first integrated circuit further comprises at least one switch contained in a third supply modulator and at least one switch contained in a fourth supply modulator; the switching capacitor circuit is configured to output the majority of discrete voltages to the first supply modulator, the second supply modulator, the third supply modulator, and the fourth supply modulator; a third output terminal of the third supply modulator, which is contained in the first integrated circuit, is connected to the third power amplifier; a fourth output terminal of the fourth supply modulator, which is included in the first integrated circuit, is connected to the fourth power amplifier; the first power amplifier and the second power amplifier are configured to amplify high-frequency signals in a first high-frequency band; and The third and fourth power amplifiers are configured to amplify high-frequency signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band.

[0294] <13> The high-frequency module according to <12> , where: the first integrated circuit and the fourth integrated circuit are arranged on a first main surface of the module laminate; and the first integrated circuit is arranged to be adjacent to the fourth integrated circuit.

[0295] <14> The high-frequency module according to <12> , where: the modular laminate has a first main surface and a second main surface facing each other; the fourth integrated circuit is located on the first main surface; the first integrated circuit is arranged on the second main surface; and in a top view of the first main surface and the second main surface, a gain transistor of the first power amplifier at least partially overlaps the first integrated circuit, a gain transistor of the second power amplifier at least partially overlaps the first integrated circuit, a gain transistor of the third power amplifier at least partially overlaps the first integrated circuit, and a gain transistor of the fourth power amplifier at least partially overlaps the first integrated circuit.

[0296] <15> The high-frequency module according to <8> , further comprising a fifth integrated circuit and a sixth integrated circuit arranged on the module laminate, wherein: the fifth integrated circuit comprises the first power amplifier and the second power amplifier; The sixth integrated circuit includes the following: a third power amplifier connected to a second vertical polarization antenna; and a fourth power amplifier connected to a second horizontal polarization antenna; the first integrated circuit further comprises at least one switch contained in a third supply modulator and at least one switch contained in a fourth supply modulator; the switching capacitor circuit is configured to output the majority of discrete voltages to the first supply modulator, the second supply modulator, the third supply modulator, and the fourth supply modulator; a third output terminal of the third supply modulator, which is contained in the first integrated circuit, is connected to the third power amplifier; a fourth output terminal of the fourth supply modulator, which is included in the first integrated circuit, is connected to the fourth power amplifier; the first power amplifier and the second power amplifier are configured to amplify high-frequency signals in a first high-frequency band; and The third and fourth power amplifiers are configured to amplify high-frequency signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band.

[0297] <16> The high-frequency module according to <15> , where: the first integrated circuit, the fifth integrated circuit, and the sixth integrated circuit are arranged on a first main surface of the module laminate; and in a top view of the first main surface, the first integrated circuit is arranged between the fifth integrated circuit and the sixth integrated circuit, and the first integrated circuit is arranged to be adjacent to the fifth integrated circuit, and is arranged to be adjacent to the sixth integrated circuit.

[0298] <17> The high-frequency module according to <15> , where: the modular laminate has a first main surface and a second main surface facing each other; the fifth integrated circuit and the sixth integrated circuit are arranged on the first main surface; the first integrated circuit is arranged on the second main surface; and in a top view of the first main surface and the second main surface, a gain transistor of the first power amplifier at least partially overlaps the first integrated circuit, a gain transistor of the second power amplifier at least partially overlaps the first integrated circuit, a gain transistor of the third power amplifier at least partially overlaps the first integrated circuit, and a gain transistor of the fourth power amplifier at least partially overlaps the first integrated circuit.

[0299] <18> The high-frequency module according to one of <12> until <17> , where the first high-frequency band and the second high-frequency band are each a millimeter wave band or a sub-terahertz band.

[0300] <19> A high-frequency signal transmission method that includes the following steps: Generating a plurality of discrete voltages based on an input voltage; selective supply of at least one of the majority of discrete voltages to a first power amplifier based on an envelope signal of a first high-frequency signal; selective supply of at least one of the majority of discrete voltages to a second power amplifier based on an envelope signal of a second high-frequency signal; Amplification of the first high-frequency signal by the first power amplifier and emission of a vertically polarized signal; and Amplification of the second high-frequency signal by the second power amplifier and emission of a horizontally polarized signal.

[0301] <20> The high-frequency signal transmission method according to <19> , wherein a timing control for selectively supplying at least one of the plurality of discrete voltages to the first power amplifier on the basis of the envelope signal of the first high-frequency signal is the same as a timing control for selectively supplying at least one of the plurality of discrete voltages to the second power amplifier on the basis of the envelope signal of the second high-frequency signal. Industrial applicability

[0302] The present invention is widely applicable to a communication device of a mobile phone, etc., as a high-frequency circuit or high-frequency module arranged on a front-end section, adapted for a millimeter wave band or a sub-terahertz band. Reference symbol list 1, 6, 7, 7A High-frequency circuit 1A, 1B, 1C, 1D, 1E, 1F High-frequency module 2, 4, 4A Follower circuit 3A, 3B, 5, 5A, 5B RFIC 8 PAIC 9 Communication device 10 Pre-regulator circuit 10S PR switch section 20 Switching capacitor circuit 20S SC switch section 30A, 30B, 31, 32, 33, 34, 35 Supply modulator 30AS, 30BS, 31S, 32S, 33S, 34S SM switch section 40 Digital control circuit 40S Digital Control Section 41 First control 42 Second control 50, 50a, 50b, 60, 60a, 60b, 70 power amplifiers 51, 51a, 51b, 61, 61a, 61b, 71 Low-noise amplifiers 52, 52a, 52b, 53, 53a, 53b, 62, 62a, 62b, 63, 63a, 63b Phase shift circuit 54, 54a, 54b, 64, 64a, 64b, 74 Switches 80A, 80C, 80E, 80F Integrated Circuit 90 modular laminate 90a, 90b Main surface 91, 92 resin component 110, 131A, 131B, 132A, 132B, 133A, 133B, 134A, 134B, 501, 502, 511, 512, 513, 514 Input connection 111, 130A, 130B, 241, 242, 251, 252, 253, 254 Output connection 150 External connection port 200H, 201H, 202H, 200V, 201V, 202V, 203 antenna 261, 262, 263, 264 Control signal connection 300 BBIC 401, 402, 403, 404, 405, 406, 407, 408, 409, 410 wire 410a, 410b, 420a, 420b mixers 510, 520 Local Oscillator QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 8829993

[0003]

Claims

[1] A high-frequency circuit which has the following features: a first power amplifier connected to a first vertical polarization antenna; a second power amplifier connected to a first horizontal polarization antenna; a switching capacitor circuit configured to generate a plurality of discrete voltages based on an input voltage; a first supply modulator configured to selectively output at least one of the majority of discrete voltages to the first power amplifier; and a second supply modulator configured to selectively output at least one of the majority of discrete voltages to the second power amplifier. [2] The high-frequency circuit according to claim 1, wherein: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; and the second supply modulator is configured to select at least one of the plurality of discrete voltages according to a second parallel data signal that differs from the first parallel data signal. [3] The high-frequency circuit according to claim 1, wherein: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; and the second supply modulator is configured to select at least one of the majority of discrete voltages according to the first parallel data signal. [4] The high-frequency circuit according to one of claims 1 to 3, which further comprises the following features: a third power amplifier connected to a second vertical polarization antenna; a fourth power amplifier connected to a second horizontal polarization antenna; a third supply modulator configured to selectively output at least one of the plurality of discrete voltages to the third power amplifier; and a fourth supply modulator configured to selectively output at least one of the plurality of discrete voltages to the fourth power amplifier, wherein: the first power amplifier and the second power amplifier are configured to amplify high-frequency signals in a first high-frequency band; and The third and fourth power amplifiers are configured to amplify high-frequency signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band. [5] The high-frequency circuit according to claim 4, wherein: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; the second supply modulator is configured to select at least one of the plurality of discrete voltages according to a second parallel data signal that differs from the first parallel data signal; the third supply modulator is configured to select at least one of the plurality of discrete voltages according to a third parallel data signal that differs from the first parallel data signal and the second parallel data signal; and the fourth supply modulator is configured to select at least one of the plurality of discrete voltages according to a fourth parallel data signal that differs from the first parallel data signal, the second parallel data signal, and the third parallel data signal. [6] The high-frequency circuit according to claim 4, wherein: the first supply modulator is configured to select at least one of the plurality of discrete voltages according to a first parallel data signal; the second supply modulator is configured to select at least one of the plurality of discrete voltages according to the first parallel data signal; the third supply modulator is configured to select at least one of the plurality of discrete voltages according to a third parallel data signal that differs from the first parallel data signal; and The fourth supply modulator is configured to select at least one of the majority of discrete voltages according to the third parallel data signal. [7] The high-frequency circuit according to claim 4, which further comprises the following features: a fifth power amplifier connected to a first antenna; and a fifth supply modulator configured to selectively output at least one of the plurality of discrete voltages to the fifth power amplifier, wherein: the fifth power amplifier is configured to amplify a high-frequency signal in a sub-6 band; and The first high-frequency band and the second high-frequency band are each a millimeter wave band or a sub-terahertz band. [8] A high-frequency module that has the following features: a modular laminate; and a first integrated circuit arranged on the module laminate, wherein: the first integrated circuit comprises at least one switch included in a switching capacitor circuit, at least one switch included in a first supply modulator, and at least one switch included in a second supply modulator; The switching capacitor circuit is configured to generate a plurality of discrete voltages based on an input voltage, and to output the plurality of generated discrete voltages to the first supply modulator and the second supply modulator; a first output terminal of the first supply modulator contained in the first integrated circuit is connected to a first power amplifier, which is connected to a first vertical polarization antenna; and a second output terminal of the second supply modulator, which is contained in the first integrated circuit, is connected to a second power amplifier, which is connected to a first horizontal polarization antenna. [9] The high-frequency module according to claim 8, further comprising a second integrated circuit and a third integrated circuit arranged on the module laminate, wherein: The second integrated circuit includes the following: the first power amplifier; a first phase-shifting circuit connected to one input end of the first power amplifier; and The third integrated circuit comprises the following: the second power amplifier; and a second phase shift circuit connected to one input end of the second power amplifier. [10] The high-frequency module according to claim 9, wherein: the first integrated circuit, the second integrated circuit, and the third integrated circuit are arranged on a first main surface of the module laminate; and the first integrated circuit is arranged to be adjacent to the second integrated circuit, and is arranged to be adjacent to the third integrated circuit. [11] The high-frequency module according to claim 9, wherein: the modular laminate has a first main surface and a second main surface facing each other; the second integrated circuit and the third integrated circuit are arranged on the first main surface; the first integrated circuit is arranged on the second main surface; and In a top view of the first main surface and the second main surface, a gain transistor of the first power amplifier at least partially overlaps the first integrated circuit, and a gain transistor of the second power amplifier at least partially overlaps the first integrated circuit. [12] The high-frequency module according to claim 8, further comprising a fourth integrated circuit arranged on the module laminate, wherein: The fourth integrated circuit comprises the following: the first power amplifier; the second power amplifier; a third power amplifier connected to a second vertical polarization antenna; and a fourth power amplifier connected to a second horizontal polarization antenna; the first integrated circuit further comprises at least one switch contained in a third supply modulator and at least one switch contained in a fourth supply modulator; the switching capacitor circuit is configured to output the majority of discrete voltages to the first supply modulator, the second supply modulator, the third supply modulator, and the fourth supply modulator; a third output terminal of the third supply modulator, which is contained in the first integrated circuit, is connected to the third power amplifier; a fourth output terminal of the fourth supply modulator, which is included in the first integrated circuit, is connected to the fourth power amplifier; the first power amplifier and the second power amplifier are configured to amplify high-frequency signals in a first high-frequency band; and The third and fourth power amplifiers are configured to amplify high-frequency signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band. [13] The high-frequency module according to claim 12, wherein: the first integrated circuit and the fourth integrated circuit are arranged on a first main surface of the module laminate; and the first integrated circuit is arranged to be adjacent to the fourth integrated circuit. [14] The high-frequency module according to claim 12, wherein: the modular laminate has a first main surface and a second main surface facing each other; the fourth integrated circuit is located on the first main surface; the first integrated circuit is arranged on the second main surface; and in a top view of the first main surface and the second main surface, A gain transistor of the first power amplifier at least partially overlaps the first integrated circuit; a gain transistor of the second power amplifier at least partially overlaps the first integrated circuit. A gain transistor of the third power amplifier at least partially overlaps the first integrated circuit, and a gain transistor of the fourth power amplifier at least partially overlaps the first integrated circuit. [15] The high-frequency module according to claim 8, further comprising a fifth integrated circuit and a sixth integrated circuit arranged on the module laminate, wherein: the fifth integrated circuit comprises the first power amplifier and the second power amplifier; The sixth integrated circuit includes the following: a third power amplifier connected to a second vertical polarization antenna; and a fourth power amplifier connected to a second horizontal polarization antenna; the first integrated circuit further comprises at least one switch contained in a third supply modulator and at least one switch contained in a fourth supply modulator; the switching capacitor circuit is configured to output the majority of discrete voltages to the first supply modulator, the second supply modulator, the third supply modulator, and the fourth supply modulator; a third output terminal of the third supply modulator, which is contained in the first integrated circuit, is connected to the third power amplifier; a fourth output terminal of the fourth supply modulator, which is included in the first integrated circuit, is connected to the fourth power amplifier; the first power amplifier and the second power amplifier are configured to amplify high-frequency signals in a first high-frequency band; and the third power amplifier and the fourth power amplifier are configured to amplify high-frequency signals in a second high-frequency band on a higher-frequency side relative to the first high-frequency band. [16] The high-frequency module according to claim 15, wherein: the first integrated circuit, the fifth integrated circuit, and the sixth integrated circuit are arranged on a first main surface of the module laminate; and in a top view of the first main surface, the first integrated circuit is arranged between the fifth integrated circuit and the sixth integrated circuit, and the first integrated circuit is arranged to be adjacent to the fifth integrated circuit, and is arranged to be adjacent to the sixth integrated circuit. [17] The high-frequency module according to claim 15, wherein: the modular laminate has a first main surface and a second main surface facing each other; the fifth integrated circuit and the sixth integrated circuit are arranged on the first main surface; the first integrated circuit is arranged on the second main surface; and in a top view of the first main surface and the second main surface, a gain transistor of the first power amplifier at least partially overlaps the first integrated circuit, a gain transistor of the second power amplifier at least partially overlaps the first integrated circuit, a gain transistor of the third power amplifier at least partially overlaps the first integrated circuit, and a gain transistor of the fourth power amplifier at least partially overlaps the first integrated circuit. [18] The high-frequency module according to any one of claims 12 to 17, wherein the first high-frequency band and the second high-frequency band are each a millimeter wave band or a sub-terahertz band. [19] A high-frequency signal transmission method comprising the following steps: Generating a plurality of discrete voltages based on an input voltage; selective supply of at least one of the majority of discrete voltages to a first power amplifier based on an envelope signal of a first high-frequency signal; selective supply of at least one of the majority of discrete voltages to a second power amplifier based on an envelope signal of a second high-frequency signal; Amplification of the first high-frequency signal by the first power amplifier and emission of a vertically polarized signal; and Amplification of the second high-frequency signal by the second power amplifier and emission of a horizontally polarized signal. [20] The high-frequency signal transmission method according to claim 19, wherein a timing control for selectively supplying at least one of the plurality of discrete voltages to the first power amplifier based on the envelope signal of the first high-frequency signal is the same as a timing control for selectively supplying at least one of the plurality of discrete voltages to the second power amplifier based on the envelope signal of the second high-frequency signal.

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