SEMICONDUCTOR COMPONENT AND VEHICLE

Abstract

A semiconductor device comprising a semiconductor element and a first terminal positioned on a first side in a first direction of the semiconductor element and electrically connected to it. A first channel is provided between the semiconductor element and the first terminal in the first direction. The semiconductor element is in contact with this first channel. In one example, the semiconductor device additionally includes a first conductive element that is electrically connected to both the semiconductor element and the first terminal. The first conductive element is contained within the first channel.

Description

TECHNICAL AREA

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device. BACKGROUND

[0002] Patent document 1 discloses an example of a semiconductor module equipped with a semiconductor device and a cooling unit. The cooling unit comprises a housing with a hollow interior and a heat sink. The housing has an opening leading into the hollow interior. The heat sink is attached to the housing to cover the opening. A section of the heat sink extends into the hollow interior. The semiconductor device is bonded to the section of the heat sink that lies outside the hollow interior. Coolant (such as cooling water) flowing through the hollow interior comes into contact with the heat sink. The heat sink thus efficiently cools the semiconductor device.

[0003] However, according to patent document 1, the semiconductor module is not configured in such a way as to provide sufficient cooling for the semiconductor device, given the size of the cooling unit. State of the art document Patent document

[0004] Patent document 1: WO 2017 / 094370 A1 SUMMARY OF THE INVENTION: Problem to be solved by the invention

[0005] One objective of the present disclosure is to provide an improved semiconductor device compared to conventional ones. In view of the circumstances described above, a particular objective of the present disclosure is to provide a semiconductor device with improved cooling efficiency. Means of solving the problem

[0006] A semiconductor device according to a first aspect of the present disclosure comprises a semiconductor element and a first terminal, which is positioned on a first side in a first direction of the semiconductor element and is electrically connected to the semiconductor element. In the first direction, a first channel is provided between the semiconductor element and the first terminal. The semiconductor element is in contact with the first channel.

[0007] A vehicle according to a second aspect of the present disclosure comprises a power source and a semiconductor device. The semiconductor device is electrically connected to the power source. The semiconductor device comprises the semiconductor device according to the first aspect of the present disclosure and additionally comprises a second terminal and a signal terminal. The semiconductor element of the semiconductor device comprises a first electrode, a second electrode, and a gate electrode. The first conductive element of the semiconductor device is electrically connected to the first electrode. The second terminal is electrically connected to the second electrode. The signal terminal is electrically connected to the gate electrode. Advantages of the invention

[0008] The configuration described above improves the cooling efficiency of the semiconductor device.

[0009] Further features and advantages of the present disclosure will become clearer from the detailed description below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a top view of a semiconductor device according to a first embodiment of the present disclosure. Fig. 2 is a top view, which Fig. 1 corresponds to the case being depicted as transparent. Fig. 3 is a top view, which the Fig. 2 corresponds and in which the first connection is also shown transparently. Fig. 4 is a bottom view of the in Fig. 1 semiconductor device shown. Fig. 5 is a view from the right side of the in Fig. 1 semiconductor device shown. Fig. 6 is a view from the left side of the in Fig. 1 semiconductor device shown. Fig. 7 is a sectional view along line VII-VII in Fig. 3. Fig. 8 is a sectional view along line VIII-VIII in Fig. 3. Fig. Figure 9 is a sectional view along line IX-IX in Fig. 3. Fig. 10 is a partially enlarged view of Fig. 7. Fig. 11 is a partially enlarged view of Fig. 8. Fig. Figure 12 is a sectional view to illustrate the effects of the in Fig. 1 semiconductor device shown. Fig. 13 is a sectional view of a semiconductor device according to a second embodiment of the present disclosure, along a line corresponding to the one shown in Fig. The cut shown in section 7 corresponds to this. Fig. 14 is a sectional view of the in Fig. 13 semiconductor device shown, along a line corresponding to the one in Fig. The section shown in section 8 corresponds to this. Fig. 15 is a partially enlarged view of Fig. 13. Fig. 16 is a sectional view of a semiconductor device according to a third embodiment of the present disclosure, along a line corresponding to the one shown in Fig. The cut shown in section 7 corresponds to this. Fig. 17 is a sectional view of the in Fig. 16 semiconductor device shown, along a line corresponding to the one shown in Fig. The section shown in section 8 corresponds to this. Fig. 18 is a partially enlarged view of Fig. 16. Fig. Figure 19 is a top view of a semiconductor device according to a fourth embodiment of the present disclosure. Fig. 20 is a bottom view of the in Fig. 19 semiconductor components shown. Fig. 21 is a sectional view along line XXI-XXI in Fig. 19. Fig. 22 is a sectional view along line XXII-XXII in Fig. 19. Fig. Figure 23 is a top view of a semiconductor device according to a fifth embodiment of the present disclosure, in which the housing is shown to be transparent. Fig. 24 is a sectional view along line XXIV-XXIV in Fig. 23. Fig. 25 is a sectional view along line XXV-XXV in Fig. 23. Fig. 26 is a sectional view along line XXVI-XXVI in Fig. 23. Fig. 27 is a partially enlarged view of Fig. 24. Fig. 28 is a partially enlarged view of Fig. 25. Fig. 29 is a schematic view of a vehicle equipped with the in Fig. is equipped with the semiconductor component shown in section 23. FORM OF EXECUTION OF THE INVENTION

[0010] With reference to the attached drawings, embodiments of the present disclosure are described below. First embodiment:

[0011] In relation to Fig. References 1 to 11 below describe a semiconductor device A10 according to a first embodiment of the present disclosure. The semiconductor device A10 is typically used in a power conversion circuit, such as an inverter. The semiconductor device A10 has a first terminal 11, a second terminal 12, a first signal terminal 14, a second signal terminal 15, a plurality of first semiconductor elements 21, a plurality of first conductive elements 31, a plurality of second conductive elements 32, a plurality of third conductive elements 33, a plurality of fourth conductive elements 34, and a housing 50. For clarity, Figure 1 shows Fig. 2 the case 50 as transparent. In Fig. Figure 2 shows the outline of housing 50 in phantom lines (dash-colon lines). For better clarity, it shows Fig. 3 the first connection 11 and the housing 50 as transparent. In Fig. 3 The outlines of the first connection 11 and the housing 50 are shown in phantom lines (dash-colon lines).

[0012] For the sake of simplicity, in the description of the semiconductor device A10, the direction perpendicular to the first mounting surface 121A of the second terminal 12, which is described later, is referred to as the "first direction z", a direction perpendicular to the first direction z as the "second direction x", and the direction perpendicular to both the first direction z and the second direction x as the "third direction y".

[0013] As in the Fig. As shown in Figures 7 to 9, the housing 50 supports / carries the first terminal 11, the second terminal 12, the first signal terminal 14, and the second signal terminal 15. The housing 50 can be made of an insulating material, including resin. Alternatively, the housing 50 can be made of a conductive material, including metal, such as aluminum (Al).

[0014] As in the Fig. 1, Fig. 4, Fig. 5 and Fig. As shown in Figure 6, the housing 50 has a top surface 51, a bottom surface 52, a first side surface 531, a second side surface 532, a third side surface 533, and a fourth side surface 534. The top surface 51 points in a first direction z. The bottom surface 52 points away from the top surface 51 in the first direction z. The first side surface 531 and the second side surface 532 point away from each other in the second direction x. The third side surface 533 and the fourth side surface 534 point away from each other in the third direction y.

[0015] As in the Fig. As shown in Figures 7 to 9, the housing 50 has a cavity 54. The cavity 54 is in contact with the ambient air. Alternatively, as shown in Fig. As shown in Figure 12, the cavity 54 is normally filled with a coolant 60. The cavity 54 has a first channel 541 and a second channel 542. The first channel 541 is located between the plurality of first semiconductor elements 21 and the first terminal 11 in the first direction z. The second channel 542 is located between the plurality of first semiconductor elements 21 and the second terminal 12 in the first direction z. Note that the Fig. The coolant 60 shown in Figure 12 must be an insulator. In the present disclosure, the coolant 60 can have any composition, as long as the coolant 60 is an insulator.

[0016] As in Fig. 1, Fig. 4, Fig. 5 and Fig. As shown in Figure 6, the housing 50 has an inlet 55 and an outlet 56. The inlet 55 is formed on the third side surface 533 and opens into the cavity 54. The outlet 56 is formed on the fourth side surface 534 and opens into the cavity 54. The in Fig. The coolant 60 shown in Figure 12 enters the housing 50 through the inlet 55 and flows into the cavity 54. The coolant 60 then exits the cavity 54 through the outlet 56. As shown in Figure 12, the coolant 60 enters the housing 50 through the inlet 55 and flows into the cavity 54. The coolant 60 then exits the cavity 54 through the outlet 56. Fig. As shown in Figure 3, the inlet 55 and the outlet 56 are positioned opposite each other in the third direction y with respect to the first conductive elements 31.

[0017] As in the Fig. As shown in Figures 7 to 9, the first terminal 11 is positioned on the first side in the first direction z of the first semiconductor elements 21. In semiconductor device A10, the first terminal 11 is positioned between the plurality of first semiconductor elements 21 and the top surface 51 of the housing 50 in the first direction z. The first terminal 11 is a metal plate containing, for example, copper (Cu). The first terminal 11 has a first base 111 and a first extension 112. The first base 111 lies in the cavity 54 of the housing 50 and is in contact with the first channel 541. The first base 111 has a ribbon-like shape that extends in the second direction x. The first extension 112 is connected to the end of the first base 111 on a first side in the second direction x. The first extension 112 is supported by the housing 50.The first extension 112 has a section that protrudes outwards from the second side surface 532 of the housing 50.

[0018] As in the Fig. As shown in Figures 7 to 9, the second terminal 12 is positioned relative to the first terminal 11 with respect to the plurality of first semiconductor elements 21 in the first direction z. In semiconductor device A10, the second terminal 12 is positioned between the plurality of first semiconductor elements 21 and the bottom 52 of the housing 50 in the first direction z. The second terminal 12 is a metal plate containing, for example, copper. The second terminal 12 has a second base 121 and a second extension 122. The second base 121 lies in the cavity 54 of the housing 50 and is in contact with the second channel 542. The second base 121 has a ribbon-like shape extending in the second direction x. The second base 121 has a first mounting surface 121A that faces the same side as the top 51 of the housing 50 in the first direction z.The second extension 122 is electrically connected to the end of the second base 121 on the first side in the second direction x. The second extension 122 is supported by the housing 50. The second extension 122 has a section that projects outwards from the first side surface 531 of the housing 50.

[0019] As in the Fig. As shown in Figures 7 to 9, the first semiconductor elements 21 are positioned between the first base 111 of the first terminal 11 and the second base 121 of the second terminal 12 in the first direction z. The plurality of first semiconductor elements 21 is located in the cavity 54 of the housing 50. Each first semiconductor element 21 is in contact with both the first channel 541 and the second channel 542. Viewed in the first direction z, the first semiconductor elements 21 overlap the first mounting surface 121A of the second base 121. All first semiconductor elements 21 are identical. In one example, the first semiconductor elements 21 are MOSFETs (metal-oxide-semiconductor field-effect transistors). In other examples, the first semiconductor elements may be 21 field-effect transistors, including MISFETs (metal-insulator-semiconductor field-effect transistors), or bipolar transistors, including IGBTs (isolated gate bipolar transistors).In the description of semiconductor device A10 below, it is assumed that the first semiconductor elements 21 are n-channel, vertical MOSFETs. The first semiconductor elements 21 have a composite semiconductor substrate. The composite semiconductor substrate contains silicon carbide (SiC). The first semiconductor elements 21 are oriented in the second x-direction.

[0020] As in Fig. 3 and Fig. As shown in Figure 11, each first semiconductor element 21 has a first electrode 211, a second electrode 212 and a first gate electrode 213.

[0021] As in Fig. As shown in Figure 11, the first electrode 211 is located on the side facing the first base 111 of the first terminal 11 in the first direction z. The first electrode 211 is electrically connected to the first terminal 11. The first electrode 211 carries the current corresponding to the power after conversion by the first semiconductor element 21. That is, the first electrode 211 corresponds to the "source" of the first semiconductor element 21. The first electrode 211 is in contact with the first channel 541.

[0022] As in Fig. As shown in Figure 11, the second electrode 212 is located on the side facing the second base 121 of the second terminal 12 in the first direction z. The second electrode 212 is electrically connected to the second terminal 12. The second electrode 212 carries the current corresponding to the power before conversion by the first semiconductor element 21. That is, the second electrode 212 corresponds to the "drain" of the first semiconductor element 21. The second electrode 212 is in contact with the second channel 542.

[0023] As in Fig. As shown in Figure 11, the first gate electrode 213 is located on the same side as the first electrode 211 in the first z-direction. The first gate electrode 213 is electrically connected to the first signal terminal 14. The first gate electrode 213 receives a gate voltage that drives the first semiconductor element 21. As shown in Fig. As shown in Figure 3, the first gate electrode 213, viewed in the first direction z, has a smaller area than the first electrode 211.

[0024] Each first conductive element 31 is electrically connected to the first electrode 211 of one of the first semiconductor elements 21 and to the first terminal 11. As shown in the Fig. As shown in Figures 7 to 9, the first conductive elements 31 are positioned between the plurality of first semiconductor elements 21 and the first base 111 of the first terminal 11 in the first direction z. The first conductive elements 31 are contained in the first channel 541. The first conductive elements 31 may, for example, contain metal pieces containing copper. Each first conductive element 31 may have a cylindrical shape. As shown in the Fig. 10 and Fig. As shown in Figure 11, each first conductive element 31 is electrically connected at its end on the first side in the first direction z to the first electrode 211 of one of the first semiconductor elements 21 via a bond layer 29. The bond layer 29 can be formed from solder. In other examples, the bond layer 29 can be formed from a sintered metal containing silver (Ag). Each first conductive element 31 is electrically connected at its end on a second side in the first direction z to the first base 111 of the first terminal 11 via a bond layer 29. Each first conductive element 31 has a dimension L1 in the first direction z, where dimension L1 is larger than a dimension of the first conductive element 31 in a direction perpendicular to the first direction z.

[0025] Every second conductive element 32 is electrically connected to the second electrode 212 of one of the first semiconductor elements 21 and to the second terminal 12. As in Fig. As shown in Figures 7 to 9, the second conductive elements 32 are positioned between the plurality of first semiconductor elements 21 and the second base 121 of the second terminal 12 in the first direction z. The second conductive elements 32 are contained in the second channel 542. The second conductive elements 32 are, for example, metal pieces containing copper. Each second conductive element 32 can have a cylindrical shape. As shown in Fig. 10 and Fig. As shown in Figure 11, every second conductive element 32 is electrically connected at its end on the first side in the first direction z to the second electrode 212 of one of the first semiconductor elements 21 via a bond layer 29. Every second conductive element 32 is electrically connected at its end on the second side in the first direction z to the first mounting surface 121A of the second base 121 via a bond layer 29. Every second conductive element 32 has a dimension L2 in the first direction z, where dimension L2 is larger than a dimension of the second conductive element 32 in a direction perpendicular to the first direction z.

[0026] As in Fig. As shown in Figure 2, the first signal terminal 14 is positioned on a first side in the third direction y from the first terminal 11. The first signal terminal 14 is supported by the housing 50. The first signal terminal 14 is electrically connected to the first gate electrode 213 of each first semiconductor element 21. The first signal terminal 14 receives a gate voltage that controls the first semiconductor elements 21. The first signal terminal 14 is, for example, a metal conductor containing copper. As shown in Fig. As shown in Figure 3, the first signal terminal 14 has an inner section 141 and an outer section 142. The inner section 141 is located in the housing 50. The inner section 141 has a section that lies in the cavity 54 of the housing 50. The inner section 141 has a section that extends in the second direction x. The outer section 142 is connected to the inner section 141. As shown in Figure 3, the first signal terminal 14 has an inner section 141 and an outer section 142. Fig. 6 and Fig. As shown in Figure 8, the outer section 142 protrudes outwards from the third side surface 533 of the housing 50.

[0027] Every third conductive element 33 is electrically connected to the first gate electrode 213 of one of the first semiconductor elements 21 and to the first signal terminal 14. As in Fig. As shown in Figure 3, every third conductive element 33 extends in the third direction y. Every third conductive element 33 has a section that is contained within the first channel 541. The third conductive elements 33 are metal conductors containing, for example, copper. At its end on a first side in the third direction y, every third conductive element 33 is electrically connected via a bond layer 29 to the first gate electrode 213 of one of the first semiconductor elements 21. At its end on a second side in the third direction y, every third conductive element 33 is electrically connected to the inner section 141 of the first signal terminal 14.

[0028] As in Fig. As shown in Figure 2, the second signal terminal 15 is positioned on the same side as the first signal terminal 14, opposite the first terminal 11 in the third direction y. The second signal terminal 15 is supported by the housing 50. The second signal terminal 15 is electrically connected to the first electrode 211 of each first semiconductor element 21. The second signal terminal 15 accepts a voltage equal to the voltage applied to the first electrode 211 of each first semiconductor element 21. The second signal terminal 15 is, for example, a metal conductor containing copper. As shown in Figure 2, the second signal terminal 15 is a metal conductor containing copper. Fig. As shown in Figure 3, the second signal terminal 15 has an inner section 151 and an outer section 152. The inner section 151 lies within the housing 50. The inner section 151 has a section that lies within the cavity 54 of the housing 50. The inner section 151 has a section that extends in the second direction x. As shown in Figure 3, the inner section 151 has a section that extends in the second direction x. Fig. 8 and Fig. As shown in Figure 9, the inner section 151 is positioned closer to the top 51 of the housing 50 than the inner section 141 of the first signal terminal 14. The outer section 152 is connected to the inner section 151. As shown in Fig. 6 and Fig. As shown in Figure 9, the outer section 152 protrudes outwards from the third side surface 533 of the housing 50.

[0029] Every fourth conductive element 34 is electrically connected to the first electrode 211 of one of the first semiconductor elements 21 and to the second signal terminal 15. As in Fig. As shown in Figure 3, every fourth conductive element 34 extends in the first direction z when viewed in the third direction y. As in Fig. As shown in Figure 9, every fourth conductive element 34 spans the inner section 141 of the first signal terminal 14. Every fourth conductive element 34 has a section that is contained within the first channel 541. The fourth conductive elements 34 are, for example, metal conductors containing copper. At its end on the first side, every fourth conductive element 34 is electrically connected in the third direction y to the first electrode 211 of one of the first semiconductor elements 21. At its end on the second side, every fourth conductive element 34 is electrically connected in the third direction y to the inner section 151 of the second signal terminal 15.

[0030] The following description explains the effects of the semiconductor device A10.

[0031] The semiconductor device A10 comprises a first semiconductor element 21 and a first terminal 11. The first terminal 11 is positioned on a first side in a first direction z of the first semiconductor element 21 and is electrically connected to the first terminal 11. A first channel 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first semiconductor element 21 is in contact with the first channel 541. In this configuration, the coolant 60, which enters the cavity 54 of the housing 50, flows through the first channel 541, as shown in Fig. Figure 12 shows that this ensures the coolant 60 comes into direct contact with the first semiconductor element 21, allowing the semiconductor device A10 to achieve higher cooling efficiency than conventional configurations. This means that this configuration of the semiconductor device A10 can further improve cooling efficiency.

[0032] The semiconductor device A10 also features a first conductive element 31, which is electrically connected to the first semiconductor element 21 and the first terminal 11. The first conductive element 31 is located in the first channel 541. This configuration ensures that the coolant 60 comes into direct contact with the first conductive element 31. This allows the heat conducted from the first semiconductor element 21 to the first conductive element 31 to be efficiently dissipated to the environment.

[0033] The first electrode 211 of the first semiconductor element 21 is in contact with the first channel 541. This configuration ensures that the coolant 60 comes into direct contact with the first electrode 211. This allows the heat from the first semiconductor element 21 to be efficiently dissipated to the environment.

[0034] The first conductive element 31 has a dimension L1 in the first direction z, where the dimension L1 is larger than a dimension of the first conductive element 31 in a direction perpendicular to the first direction z. This configuration reduces the energy loss of the coolant 60 as it flows through the first channel 541, despite the abrupt constriction caused by the first conductive element 31.

[0035] The semiconductor device A10 also has a second terminal 12 and a second conductive element 32. A second channel 542 is provided between the first semiconductor element 21 and the second terminal 12 in the first direction z. The second conductive element 32 lies in the second channel 542. The first semiconductor element 21 is in contact with the second channel 542. In this configuration, the coolant 60, which enters the cavity 54 of the housing 50, flows through the first channel 541 and also through the second channel 542, as shown in Fig. 12 shown. This ensures that a larger quantity of coolant 60 comes into direct contact with the first semiconductor element 21, so that the semiconductor device A10 achieves a higher cooling efficiency than conventional configurations.

[0036] The second electrode 212 of the first semiconductor element 21 is in contact with the second channel 542. This configuration ensures that the coolant 60 comes into direct contact with the second electrode 212. This allows the heat from the first semiconductor element 21 to be dissipated more efficiently to the environment.

[0037] The second conductive element 32 has a dimension L2 in the first direction z, where dimension L2 is larger than a dimension of the second conductive element 32 in a direction perpendicular to the first direction z. This configuration reduces the energy loss of the coolant 60 as it flows through the second channel 542, despite the abrupt constriction caused by the second conductive element 32.

[0038] The semiconductor device A10 also has a housing 50 that supports the first terminal 11 and the second terminal 12. The housing 50 has an inlet 55 and an outlet 56. The inlet 55 and the outlet 56 are positioned opposite each other in a direction perpendicular to the first direction z with respect to the first conductive elements 31. This configuration facilitates the flow of the coolant 60 in direct contact with the first conductive element 31. Second embodiment:

[0039] In relation to Fig. Figures 13 to 15 below describe a semiconductor device A20 according to a second embodiment of the present disclosure. In these figures, elements that are identical or similar to those of the semiconductor device A10 are identified by the same reference numerals, and overlapping descriptions are omitted. The Fig. Section 13 shown corresponds to the section of the semiconductor device A10, which is located in Fig. 7 is shown. The one in Fig. Section 14 shown corresponds to the section of the semiconductor device A10, which is located in Fig. 8 is shown.

[0040] In contrast to the semiconductor device A10, the semiconductor device A20 does not have any second conductive elements 32.

[0041] As in Fig. As shown in Figures 13 to 15, the second electrode 212 of each first semiconductor element 21 is electrically connected via a bond layer 29 to the first mounting surface 121A of the second base 121 of the second terminal 12.

[0042] The following description explains the effects of the semiconductor device A20.

[0043] The semiconductor device A20 comprises a first semiconductor element 21 and a first terminal 11. The first terminal 11 is positioned on a first side in a first direction z of the first semiconductor element 21 and is electrically connected to the first terminal 11. A first channel 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first semiconductor element 21 is in contact with the first channel 541. This configuration of the semiconductor device A20 can further improve cooling efficiency. Additionally, the semiconductor device A20 has a configuration common to the semiconductor device A10, thus achieving the same effects as with the semiconductor device A10.

[0044] In semiconductor device A20, the second electrode 212 of the first semiconductor element 21 is electrically connected to the second terminal 12. This configuration of semiconductor device A20 eliminates the need for the second conductive elements 32. This results in a shorter conductive path between the second electrode 212 and the second terminal 12, thereby reducing the parasitic inductance in semiconductor device A20. Third embodiment:

[0045] With reference to the Fig. Figures 16 to 18 below describe a semiconductor device A30 according to a third embodiment of the present disclosure. In these figures, elements that are identical or similar to those of the semiconductor device A10 are provided with the same reference numerals, and overlapping descriptions are omitted. The Fig. Section 16 shown corresponds to the section of the semiconductor device A10, which is located in Fig. 7 is shown. The one in Fig. Section 17 shown corresponds to the section of the semiconductor device A10, which is located in Fig. 8 is shown.

[0046] The semiconductor device A30 differs from the semiconductor device A10 in the configurations of the first conductive elements 31 and the second conductive elements 32.

[0047] As in the Fig. As shown in Figures 16 to 18, every second conductive element 32 has a dimension L2 in the first direction z, and the dimension L2 is larger than the dimension L1 of every first conductive element 31 in the first direction z. As shown in Fig. As shown in Figure 18, each first conductive element 31 has a first peripheral surface 31A that points in a direction perpendicular to the first direction z. Each second conductive element 32 has a second peripheral surface 32A that points in a direction perpendicular to the first direction z. The second peripheral surface 32A has a larger area than the first peripheral surface 31A.

[0048] The following description explains the effects of the semiconductor device A30.

[0049] The semiconductor device A30 comprises a first semiconductor element 21 and a first terminal 11. The first terminal 11 is positioned on a first side in a first direction z of the first semiconductor element 21 and is electrically connected to the first terminal 11. A first channel 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first semiconductor element 21 is in contact with the first channel 541. This configuration of the semiconductor device A30 can further improve cooling efficiency. Additionally, the semiconductor device A30 shares a configuration with the semiconductor device A10, thereby achieving the same effects as with the semiconductor device A10.

[0050] In the semiconductor device A30, each first conductive element 31 has a first peripheral surface 31A pointing in a direction perpendicular to the first direction z. Each second conductive element 32 has a second peripheral surface 32A pointing in a direction perpendicular to the first direction z. This configuration ensures, as in Fig. Figure 12 shows that the second conductive element 32 has a larger contact area with the coolant 60 than the first conductive element 31 when the coolant 60 flows into the cavity 54 of the housing 50. This causes the first semiconductor element 21 to dissipate heat from the second electrode surface 212 more easily to the environment than heat from the first electrode surface 211. Fourth embodiment:

[0051] With reference to the Fig. Figures 19 to 22 below describe a semiconductor device A40 according to a fourth embodiment of the present disclosure. In these figures, elements that are identical or similar to those of the semiconductor device A10 are identified by the same reference numerals, and overlapping descriptions are omitted.

[0052] The semiconductor device A40 differs from the semiconductor device A10 in the configurations of the first terminal 11 and the second terminal 12.

[0053] As in the Fig. 19, Fig. 21 and Fig. As shown in Figure 22, the first terminal 11 has a first base 111, which is exposed to the outside at the top 51 of the housing 50. Unlike the semiconductor device A10, the first terminal 11 does not have a first extension 112.

[0054] As in the Fig. As shown in Figures 20 to 22, the second terminal 12 has a second base 121, which is exposed on the underside 52 of the housing 50. Unlike the semiconductor device A10, the second terminal 12 does not have a second extension 122.

[0055] The following description explains the effects of the semiconductor device A40.

[0056] The semiconductor device A40 comprises a first semiconductor element 21 and a first terminal 11. The first terminal 11 is positioned on a first side in a first direction z of the first semiconductor element 21 and is electrically connected to the first terminal 11. A first channel 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first semiconductor element 21 is in contact with the first channel 541. This configuration of the semiconductor device A40 can further improve cooling efficiency. Additionally, the semiconductor device A40 has a configuration common to the semiconductor device A10, thereby achieving the same effects as with the semiconductor device A10.

[0057] In the semiconductor device A40, the first terminal 11 is exposed on the top 51 of the housing 50. The second terminal 12 is exposed on the bottom 52 of the housing 50. According to this configuration, the semiconductor device A40 can have a reduced dimension in the first direction z. Fifth embodiment:

[0058] With reference to the Fig. Figures 23 to 28 below describe a semiconductor device A50 according to a fifth embodiment of the present disclosure. In these figures, elements that are identical or similar to those of the semiconductor device A10 are identified by the same reference numerals, and overlapping descriptions are omitted. Note that the Fig. 23 the case 50 is shown as transparent for better understanding. The Fig. Figure 23 shows the outline of the housing 50 in phantom lines.

[0059] The semiconductor device A50 has the components and elements of the semiconductor device A10 and additionally includes a third terminal 13, a third signal terminal 16, a fourth signal terminal 17, a plurality of second semiconductor elements 22, a plurality of fifth conductive elements 35, a plurality of sixth conductive elements 36, a plurality of seventh conductive elements 37 and a plurality of eighth conductive elements 38.

[0060] In the semiconductor device A50, a half-bridge circuit is formed by the first semiconductor elements 21 and the second semiconductor elements 22. The semiconductor device A50 converts the direct current (DC) power supplied to the second terminal 12 and the third terminal 13 into alternating current (AC) power via the first semiconductor elements 21 and the second semiconductor elements 22. The second terminal 12 is a positive (P) terminal, while the third terminal 13 is a negative (N) terminal. The AC power generated by the conversion is output from the first terminal 11 and supplied to a load, such as a motor.

[0061] As in the Fig. As shown in Figures 25 to 27, the cavity 54 has a third channel 543 and a fourth channel 544, in addition to the first channel 541 and the second channel 542. The third channel 543 is located between the plurality of second semiconductor elements 22 and the third terminal 13 in the first z-direction. The fourth channel 544 is located between the plurality of second semiconductor elements 22 and the first terminal 11 in the first z-direction. The first base 111 of the first terminal 11 is in contact with both the first channel 541 and the fourth channel 544.

[0062] As in Fig. As shown in Figure 24, the third terminal 13 is positioned opposite the second terminal 12 with respect to the first terminal 11 in the first direction z. In the semiconductor device A50, the third terminal 13 is positioned between the plurality of second semiconductor elements 22 and the top 51 of the package 50 in the first direction z. The third terminal 13 is, for example, a metal plate containing copper. The third terminal 13 has a third base 131 and a third extension 132. The third base 131 lies in the cavity 54 of the package 50. The third base 131 is in contact with the third channel 543. The third base 131 has a ribbon-like shape that extends in the second direction x. The third extension 132 is electrically connected to the end of the third base 131 on the first side in the second direction x. The third extension 132 is supported by the package 50.The third extension 132 has a section that projects outwards from the first side face 531 of the housing 50. Viewed in the first direction z, the third extension 132 overlaps the second extension 122 of the second terminal 12.

[0063] As in the Fig. As shown in Figures 24 to 26, the second semiconductor elements 22 are positioned between the first base 111 of the first terminal 11 and the third base 131 of the third terminal 13 in the first z-direction. The plurality of second semiconductor elements 22 is located in the cavity 54 of the housing 50. Each second semiconductor element 22 is in contact with both the third channel 543 and the fourth channel 544. Viewed in the first z-direction, each second semiconductor element 22 overlaps the second mounting surface 111A of the first base 111. The second mounting surface 111A faces the same direction as the first mounting surface 121A of the second base 121 of the second terminal 12 in the first z-direction. The second semiconductor elements 22 are identical to the first semiconductor elements 21. Therefore, the second semiconductor elements 22 are n-channel, vertical MOSFETs. The second semiconductor elements 22 are oriented in the second x-direction.

[0064] As in Fig. As shown in Figure 28, every second semiconductor element 22 has a third electrode 221, a fourth electrode 222 and a second gate electrode 223.

[0065] As in Fig. As shown in Figure 28, the third electrode 221 is located on the side facing the third base 131 of the third terminal 13 in the first direction z. The third electrode 221 is electrically connected to the third terminal 13. The third electrode 221 carries the current corresponding to the power after conversion by the second semiconductor element 22. That is, the third electrode 221 corresponds to the "source" of the second semiconductor element 22. The third electrode 221 is in contact with the third channel 543.

[0066] As in Fig. As shown in Figure 28, the fourth electrode 222 is located on the side facing the first base 111 of the first terminal 11 in the first direction z. The fourth electrode 222 is electrically connected to the first terminal 11. The fourth electrode 222 carries the current corresponding to the power before conversion by the second semiconductor element 22. That is, the fourth electrode 222 corresponds to the "drain" of the second semiconductor element 22. The fourth electrode 222 is in contact with the fourth channel 544.

[0067] As in Fig. As shown in Figure 28, the second gate electrode 223 is located on the same side as the third electrode 221 in the first direction z. The second gate electrode 223 is electrically connected to the third signal terminal 16. The second gate electrode 223 accepts a gate voltage that controls the second semiconductor element 22. Viewed in the first direction z, the second gate electrode 223 has a smaller area than the third electrode 221.

[0068] Every fifth conductive element 35 is electrically connected to the third electrode 221 of one of the second semiconductor elements 22 and to the third terminal 13. As in Fig. As shown in Figures 24 to 26, the fifth conductive elements 35 are positioned between the plurality of second semiconductor elements 22 and the third base 131 of the third terminal 13 in the first direction z. The fifth conductive elements 35 lie in the third channel 543. The fifth conductive elements 35 are, for example, metal pieces containing copper. Each fifth conductive element 35 can have a cylindrical shape. Each fifth conductive element 35 is electrically connected at its end on the first side in the first direction z to the third electrode 221 of the corresponding second semiconductor element 22. Each fifth conductive element 35 is electrically connected at its end on the second side in the first direction z to the third base 131 of the third terminal 13. As shown in Fig. 27 and Fig. As shown in Figure 28, every fifth conductive element 35 has a dimension L3 in the first direction z, wherein the dimension L3 is larger than a dimension of the fifth conductive element 35 in a direction perpendicular to the first direction z.

[0069] Every sixth conductive element 36 is electrically connected to the fourth electrode 222 of one of the second semiconductor elements 22 and to the first terminal 11. As in Fig. As shown in Figures 24 to 26, the sixth conductive elements 36 are positioned between the plurality of second semiconductor elements 22 and the first base 111 of the first terminal 11 in the first direction z. The sixth conductive elements 36 are located in the fourth channel 544. The sixth conductive elements 36 are, for example, metal pieces containing copper. Each sixth conductive element 36 can have a cylindrical shape. Each sixth conductive element 36 is electrically connected at its end on the first side in the first direction z to the fourth electrode 222 of the corresponding second semiconductor element 22. Each sixth conductive element 36 is electrically connected at its end on the second side in the first direction z to the second mounting surface 111A of the first base 111. As shown in Fig. 27 and Fig. As shown in Figure 28, every sixth conductive element 36 has a dimension L4 in the first direction z, wherein the dimension L4 is larger than a dimension of the sixth conductive element 36 in a direction perpendicular to the first direction z.

[0070] As in Fig. As shown in Figure 23, the third signal terminal 16 is positioned on the first side in the third direction y from the third terminal 13. Viewed in the first direction z, the third signal terminal 16 overlaps the first signal terminal 14. The third signal terminal 16 is supported by the housing 50. The third signal terminal 16 is electrically connected to the second gate electrode 223 of each second semiconductor element 22. The third signal terminal 16 accepts a gate voltage that controls the second semiconductor elements 22. The third signal terminal 16 is, for example, a metal conductor containing copper. As shown in Fig. As shown in Figure 23, the third signal terminal 16 has an inner section 161 and an outer section 162. The inner section 161 is located in the housing 50. The inner section 161 has a section that lies in the cavity 54 of the housing 50. The inner section 161 has a section that extends in the second direction x. The outer section 162 is connected to the inner section 161. As shown in Fig. As shown in Figure 25, the outer section 162 protrudes outwards from the third side surface 533 of the housing 50.

[0071] Every seventh conductive element 37 is electrically connected to the second gate electrode 223 of one of the second semiconductor elements 22 and to the fourth signal terminal 17. As shown in Fig. As shown in Figure 23, each seventh conductive element 37 extends in the third direction y. Each seventh conductive element 37 has a section that lies in the third channel 543. The seventh conductive elements 37 are, for example, metal conductors containing copper. Each seventh conductive element 37 is electrically connected at its end on the first side in the third direction y to the second gate electrode 223 of one of the second semiconductor elements 22 via a bond layer 29. Each seventh conductive element 37 is electrically connected at its end on the second side in the third direction y to the inner section 161 of the third signal terminal 16.

[0072] As in Fig. As shown in Figure 23, the fourth signal terminal 17 is positioned on the same side as the third signal terminal 16 in the third direction y with respect to the third terminal 13. Viewed in the first direction z, the fourth signal terminal 17 overlaps the second signal terminal 15. The fourth signal terminal 17 is supported by the housing 50. The fourth signal terminal 17 is electrically connected to the third electrode 221 of every second semiconductor element 22. The fourth signal terminal 17 accepts a voltage equal to the voltage applied to the third electrode 221 of every second semiconductor element 22. The fourth signal terminal 17 is, for example, a metal conductor containing copper. As shown in Figure 23, the fourth signal terminal 17 is a metal conductor containing copper. Fig. As shown in Figure 23, the fourth signal terminal 17 has an inner section 171 and an outer section 172. The inner section 171 is located in the housing 50. The inner section 171 has a section that lies in the cavity 54 of the housing 50. The inner section 171 has a section that extends in the second direction x. As shown in Fig. 25 and Fig. As shown in Figure 26, the inner section 171 is positioned closer to the top 51 of the housing 50 than the inner section 161 of the third signal terminal 16. The outer section 172 is connected to the inner section 171. As shown in Fig. As shown in Figure 26, the outer section 172 protrudes outwards from the third side surface 533 of the housing 50.

[0073] Every eighth conductive element 38 is electrically connected to the third electrode 221 of one of the second semiconductor elements 22 and to the fourth signal terminal 17. As in Fig. As shown in Figure 23, every eighth conductive element 38 extends in the first direction z when viewed in the third direction y. As in Fig. As shown in Figure 26, every eighth conductive element 38 spans the inner section 161 of the third signal terminal 16. Every eighth conductive element 38 has a section that lies in the third channel 543. The eighth conductive elements 38 are, for example, metal conductors containing copper. At one end of every eighth conductive element 38, in the third direction y, it is electrically connected to the third electrode 221 of the corresponding second semiconductor element 22. At the other end of every eighth conductive element 38, in the first direction z, it is electrically connected to the inner section 171 of the fourth signal terminal 17.

[0074] With reference to Fig. Section 29 below describes a vehicle B equipped with the semiconductor device A50. In one example, vehicle B is an electric vehicle (EV).

[0075] As in Fig. As shown in Figure 29, vehicle B has an on-board charger 81, a storage battery 82, and a drive system 83. The on-board charger 81 receives power wirelessly from an external power supply (not shown). Alternatively, the on-board charger 81 can receive power via a wired connection. The on-board charger 81 has a step-up DC-DC converter. The converter increases the voltage supplied to the on-board charger 81 and delivers the resulting power to the storage battery 82. The voltage is increased, for example, to 600 V.

[0076] The drive system 83 propels the vehicle B. The drive system 83 comprises an inverter 831 and a power source 832. The semiconductor device A50 forms part of the inverter 831. The power stored on the storage battery 82 is supplied to the inverter 831. The storage battery 82 supplies DC power to the inverter 831. Unlike the one in Fig.In the power supply system shown in Figure 29, an additional step-up DC-DC converter can be provided between the storage battery 82 and the inverter 831. The inverter 831 converts the DC power into AC power. The inverter 831, including the semiconductor device A50, is electrically connected to the drive source 832. The drive source 832 has an AC motor and a gearbox. When AC power is supplied from the inverter 831 to the drive source 832, the AC motor rotates and transmits its rotation to the gearbox. The gearbox reduces the speed transmitted by the AC motor as needed and drives the axle of the vehicle B. This causes the vehicle B to move. While the vehicle B is moving, the speed of the AC motor must be adjusted based on relevant information, such as the position of the accelerator pedal.The inverter 831 of the semiconductor device A50 is used to adjust the frequency of the AC power in order to match the speed of the AC motor as required.

[0077] The following description explains the effects of the semiconductor device A50.

[0078] The semiconductor device A50 comprises a first semiconductor element 21 and a first terminal 11. The first terminal 11 is positioned on a first side in a first direction z of the first semiconductor element 21 and is electrically connected to the first terminal 11. A first channel 541 is provided between the first semiconductor element 21 and the first terminal 11 in the first direction z. The first semiconductor element 21 is in contact with the first channel 541. This configuration of the semiconductor device A50 can further improve cooling efficiency. Additionally, the semiconductor device A50 has a configuration common to the semiconductor device A10, thereby achieving the same effects as with the semiconductor device A10.

[0079] The present disclosure is not limited to the embodiments described above. Various design modifications may be freely made to the specific structure of the components according to the present disclosure.

[0080] The present disclosure includes embodiments which are described in the following variants. Option 1

[0081] A semiconductor device comprising: a semiconductor element; and a first terminal which is positioned on a first side in a first direction from the semiconductor element and is electrically connected to the semiconductor element, wherein a first channel is provided between the semiconductor element and the first terminal in the first direction, and the semiconductor element is in contact with the first channel. Option 2

[0082] The semiconductor device according to variant 1, further comprising: a first conductive element which is electrically connected to the semiconductor element and the first terminal, where the first conductive element is contained in the first channel. Variant 3

[0083] The semiconductor device according to variant 2, wherein the semiconductor device has a first electrode facing the first channel, and the first conductive element is electrically connected to the first electrode and the first terminal. Variant 4

[0084] The semiconductor device according to variant 3, wherein the first electrode is in contact with the first channel. Variant 5

[0085] The semiconductor device according to variant 4, wherein the first conductive element comprises a first element and a second element spaced apart from each other in a direction perpendicular to the first direction. Variant 6

[0086] The semiconductor device according to variant 5, wherein a dimension of the first conductive element in the first direction is larger than a dimension of the first conductive element in a direction perpendicular to the first direction. Variant 7

[0087] The semiconductor device according to variant 3, further comprising: a second terminal which is positioned on one side opposite the first terminal with respect to the semiconductor device in the first direction, wherein the semiconductor element has a second electrode facing the second terminal, and the second electrode is electrically connected to the second terminal. Variant 8

[0088] The semiconductor device according to variant 7, further comprising: a second conductive element which is electrically connected to each of the second electrode and the second terminal, wherein a second channel is provided between the semiconductor element and the second terminal in the first direction and contains the second conductive element, and the semiconductor element is in contact with the second channel. Variant 9

[0089] The semiconductor device according to variant 8, wherein the second electrode is in contact with the second channel. Variant 10

[0090] The semiconductor device according to variant 9, wherein a dimension of the second conductive element in the first direction is larger than a dimension of the second conductive element in a direction perpendicular to the first direction. Variant 11

[0091] The semiconductor device according to variant 8, wherein the first conductive element has a first peripheral surface that points in a direction perpendicular to the first direction, the second conductive element has a second peripheral surface that points in a direction perpendicular to the first direction, and an area of ​​the second peripheral surface is larger than an area of ​​the first peripheral surface. Variant 12

[0092] The semiconductor device according to variant 7, wherein the second electrode is electrically connected to the second terminal. Variant 13

[0093] The semiconductor component according to one of variants 7 to 12, further comprising: a signal connection, wherein the semiconductor element has a gate electrode which is positioned on the same side as the first electrode in the first direction, and The signal connection is electrically connected to the gate electrode. Variant 14

[0094] The semiconductor device according to variant 13, further comprising: a third conductive element which is electrically connected to the gate electrode and the signal terminal, where a section of the third conductive element is contained in the first channel. Variant 15

[0095] The semiconductor device according to variant 13, further comprising: a housing that supports the first terminal, the second terminal and the signal terminal, wherein the housing has a cavity containing the first channel, and the semiconductor element is contained in the cavity. Variant 16

[0096] The semiconductor device according to variant 15, wherein the housing has an inlet and an outlet, each of which leads into the cavity, and The inlet and outlet are positioned opposite each other in a direction perpendicular to the first direction with respect to the first conductive element. Variant 17

[0097] A vehicle, exhibiting: a power source; and the semiconductor component according to variant 13, where the semiconductor component is electrically connected to the drive source. REFERENCE MARK A10 to A50 Semiconductor component Vehicle B 11 first connection 111A second mounting surface 12 second connection 121A first mounting surface 13 third connection 132 third extension 141 inner section 15 second signal connection 152 outer section 161 inner section 17 fourth signal connection 172 outer section 211 first electrode 213 first gate electrode 221 third electrode 223 second gate electrode 111 first base 112 first extension 121 second base 122 second extension 131 third base 14 first signal connection 142 outer section 151 inner section 16 third signal connection 162 outer section 171 inner section 21 first semiconductor element 212 second electrode 22 second semiconductor element 222 fourth electrode 29 Bond layer 31 first conductive element 32 second conductive element 33 third conductive element 35 fifth conductive element 37 seventh conductive element 31A: first peripheral surface 32A second peripheral surface 34 fourth conductive element 36 sixth conductive element 38 eighth conductive element 50 cases 52 Underside 54 cavity 55 Admission 51 Top 531 to 534 first to fourth side surface 541 to 544 first to fourth channel 56 Outlet 60 Coolant 82 Storage battery 81 On-board charger 83 Drive system 831 Inverters 832 Drive source z first direction y third direction x second direction QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] WO 2017 / 094370 A1

[0004]

Claims

[1] Semiconductor device comprising: a semiconductor element; and a first terminal which is positioned on a first side in a first direction from the semiconductor element and is electrically connected to the semiconductor element, wherein a first channel is provided between the semiconductor element and the first terminal in the first direction, and the semiconductor element is in contact with the first channel. [2] Semiconductor device according to claim 1, further comprising: a first conductive element which is electrically connected to the semiconductor element and the first terminal, wherein the first conductive element is contained in the first channel. [3] Semiconductor device according to claim 2, wherein the semiconductor element has a first electrode facing the first channel and the first conductive element is electrically connected to the first electrode and the first terminal. [4] Semiconductor device according to claim 3, wherein the first electrode is in contact with the first channel. [5] Semiconductor device according to claim 4, wherein the first conductive element comprises a first element and a second element spaced apart from each other in a direction perpendicular to the first direction. [6] Semiconductor device according to claim 5, wherein a dimension of the first conductive element in the first direction is larger than a dimension of the first conductive element in a direction perpendicular to the first direction. [7] Semiconductor device according to claim 3, further comprising: a second terminal which is positioned on one side opposite the first terminal with respect to the semiconductor device in the first direction, wherein the semiconductor element has a second electrode facing the second terminal, and the second electrode is electrically connected to the second terminal. [8] Semiconductor device according to claim 7, further comprising: a second conductive element which is electrically connected to both the second electrode and the second terminal, wherein a second channel is provided between the semiconductor element and the second terminal in the first direction and contains the second conductive element, and the semiconductor element is in contact with the second channel. [9] Semiconductor device according to claim 8, wherein the second electrode is in contact with the second channel. [10] Semiconductor device according to claim 9, wherein a dimension of the second conductive element in the first direction is larger than a dimension of the second conductive element in a direction perpendicular to the first direction. [11] Semiconductor device according to claim 8, wherein the first conductive element has a first peripheral surface which points in a direction perpendicular to the first direction, the second conductive element has a second peripheral surface that points in a direction perpendicular to the first direction, and an area of ​​the second peripheral surface is larger than an area of ​​the first peripheral surface. [12] Semiconductor device according to claim 7, wherein the second electrode is electrically connected to the second terminal. [13] Semiconductor device according to any one of claims 7 to 12, further comprising: a signal terminal, wherein the semiconductor device has a gate electrode positioned on the same side as the first electrode in the first direction, and the signal terminal is electrically connected to the gate electrode. [14] Semiconductor device according to claim 13, further comprising: a third conductive element which is electrically connected to the gate electrode and the signal terminal, wherein a section of the third conductive element is contained in the first channel. [15] Semiconductor device according to claim 13, further comprising: a housing supporting the first terminal, the second terminal and the signal terminal, wherein the housing has a cavity containing the first channel, and the semiconductor element is contained in the cavity. [16] Semiconductor device according to claim 15, wherein the housing has an inlet and an outlet, each of which leads into the cavity, and The inlet and outlet are positioned opposite each other in a direction perpendicular to the first direction with respect to the first conductive element. [17] vehicle, comprising: a power source; and the semiconductor device according to claim 13, where the semiconductor component is electrically connected to the drive source.

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