Power semiconductor module with first and second contact elements

Abstract

Power semiconductor module (1) with a substrate (2) having a normal direction (N) and a circuit arrangement (20) in half-bridge topology, with a housing (3) having a cover surface (30) and with a first DC load connection (4), a second DC load connection (5) and an AC load connection (6), wherein each load connection is formed by at least three contact elements extending from the substrate (2) in a normal direction (N) through associated first and second recesses of the cover surface (30) and protruding therefrom, wherein the first recesses (400) associated with the first contact elements (44) of the first DC load connection (4) are arranged on within a closed surface and the second recesses (500) associated with the second contact elements (55) of the second DC load connection (5) are arranged outside this closed surface.

Description

[0001] The invention describes a power semiconductor module with a substrate having a normal direction and a circuit arrangement in a half-bridge topology, with a housing having a cover surface and with a first DC load connection, a second DC load connection and an AC load connection, wherein each load connection is formed by first and second contact elements, wherein the contact elements are arranged inside and outside a closed surface, respectively.

[0002] DE 196 30 173 A1 discloses a power module consisting of semiconductor components and passive electronic components, described in which, with pressure contact of all load and control connections to a customer-specific printed circuit board or similar external connecting elements, simple assembly and non-destructive disassembly on a cooling device by means of screws is possible. For this purpose, the housing of the module is provided with pressure contact springs, which exhibit favorable relaxation behavior, for all electrical connections and for uniform pressure distribution.

[0003] DE 10 2016 119 631 A1 discloses a power semiconductor module with a pressure inlet body, with a circuit carrier which is formed with a first conductor track, a power semiconductor component arranged thereon and an internal connection device, with a housing which is formed with a guide device arranged therein and a connection element.

[0004] The connecting element is designed as a bolt with a first and a second end section and an intermediate section, wherein the first end section rests on the circuit carrier and is electrically connected to it, and wherein the second end section protrudes from the housing through a recess, and wherein the connecting element is arranged in the associated guide device. The pressure inlet element comprises a first, rigid sub-body and a second, elastic sub-body, the second sub-body projecting from the first sub-body towards the housing.

[0005] In light of the aforementioned circumstances, the invention aims to create a power semiconductor module whose DC load connections are designed and arranged in an improved manner.

[0006] This problem is solved according to the invention by a power semiconductor module with a substrate having a normal direction and a circuit arrangement in a half-bridge topology, with a housing having a cover surface and with a first DC load connection, a second DC load connection and an AC load connection, wherein each load connection is formed by at least three contact elements which extend from the substrate in a normal direction through associated first and second recesses of the cover surface and protrude there, wherein the first recesses associated with the first contact elements of the first DC load connection are arranged on within a closed surface and the second recesses associated with the second contact elements of the second DC load connection are arranged outside this closed surface.

[0007] It is preferred if the closed surface is circular or elliptical.

[0008] It can be advantageous if the second recesses are arranged in an annular area and the first recesses are arranged within an inner boundary of this annular area.

[0009] It can also be advantageous if the first power semiconductor components are arranged on a first conductor track connected to the first DC load connection in a first circle.

[0010] It can also be advantageous if second power semiconductor devices are arranged on a third conductor track connected to the AC load terminal in a second circuit.

[0011] It may also be preferred if the first circle is completely enclosed within the second circle.

[0012] It may also be preferable if the first and second power semiconductor components are designed as power transistors.

[0013] Of course, unless explicitly or per se excluded or contrary to the idea of ​​the invention, the features or groups of features mentioned in the singular, for example the contact elements, can be present multiple times in the power semiconductor module according to the invention.

[0014] It is understood that the various embodiments of the invention can be implemented individually or in any combination to achieve improvements. In particular, the features mentioned and explained above and below can be used not only in the combinations specified, but also in other combinations or individually, without departing from the scope of the present invention.

[0015] Further explanations of the invention, advantageous details and features, will become apparent from the following description of the invention contained in the Fig. 1 to 14 schematically illustrated embodiments of the invention, or of respective parts thereof. Fig. 1 and Fig. Figure 2 shows a generic power semiconductor module according to the state of the art in various sectional views. Fig. Figure 3 shows a first embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 4 shows a first embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 5 shows a second embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 6 shows a second embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 7 shows a third embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 8 shows a third embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 9 shows a fourth embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 10 shows a fourth embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 11 shows a fifth embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 12 shows a fifth embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 13 shows a sixth embodiment of a power semiconductor module according to the invention in a schematic top view. Fig. Figure 14 shows a sixth embodiment of a power semiconductor module according to the invention in a schematic top view.

[0016] Fig. 1 and Fig. Figure 2 shows a generic power semiconductor module 1 according to the state of the art in various sectional views, a three-dimensional view in Fig. 1 and a two-dimensional in Fig. 2. Each illustration shows a power semiconductor module 1 with a substrate 2 having a normal direction N that coincides with the z-direction. A circuit arrangement 20 in a standard two- or multi-level half-bridge topology is formed on the substrate 2. In this configuration, a plurality of three half-bridge topologies are formed on the substrate 2. The substrate 2 may additionally have a standard metallic base plate (not shown). Also shown is a housing 3, which is cup-shaped. The housing 3, formed in one piece without limitations of generality, covers the substrate 2 and has a cover surface 30 opposite and parallel to the substrate 2.

[0017] The power semiconductor module 1 further comprises DC load terminals 4, 5, AC load terminals 6, and auxiliary contact elements 90, all designed as identical spring contact elements. These spring contact elements are electrically connected to the substrate 2, more precisely to conductor tracks of the substrate 2, and extend in the normal direction N through associated recesses 400, 500 of the cover surface 30, protruding there for external contact. Of course, alternative contact elements, in particular solder contact elements, preferably pin-shaped, or conventional press-pin contact elements, can be provided.

[0018] Fig. Figure 3 shows a first embodiment of a power semiconductor module according to the invention in a schematic top view. In principle, in this and the following embodiments according to the invention, the substrate 2, the housing 3, and the contact elements are identical to those of the Fig. 1 and Fig. 2. However, the recesses of the housing 3 are not explicitly shown. A cross-shaped first conductor 24 is applied centrally to the substrate 2 of the circuit arrangement 20. Several first power semiconductor devices 14 are arranged on this first conductor 24. The first conductor 24 is at least partially surrounded by a third conductor 26. At the edges of the substrate 2, adjacent to the third conductor 26, further second conductors 25 are arranged. Several second power semiconductor devices 15 are arranged on the third conductor 26. Within an imaginary first circle 34, the first contact elements 44 of the first DC load terminal 4 are arranged in the first recesses 400, which are not explicitly shown in this figure.Outside the imaginary second circle 35, the second recesses 500, associated with the second contact elements 55 of the second DC load connection 5, are arranged on a second conductor track 26, which are not explicitly shown in this figure. Third contact elements 66, which serve as AC voltage connections, are arranged on the third conductor track 26.

[0019] The Fig. Figure 4 shows a first embodiment of a power semiconductor module according to the invention in a schematic top view as in Fig. 3. A plurality of first contact elements 44 are arranged on the first conductor track 24. In the present embodiment according to the invention, the first contact elements 44 are arranged centrally on the first conductor track 24 between the first power semiconductor devices 14. A plurality of second contact elements 55 are arranged on preferably four individual second conductor tracks 25, here one second contact element 55 on each section of the second conductor track 25. In the present embodiment according to the invention, the third contact elements 66 are arranged symmetrically between the second power semiconductor devices 15 on the third conductor track 26. The first and second power semiconductor devices 14, 15 are conductively and metallurgically connected to the corresponding first, second and / or third conductor track by means of bond connections shown schematically.

[0020] Fig. Figure 5 shows a second embodiment of a power semiconductor module according to the invention in a schematic top view. Groupings of second contact elements 55 are arranged outside the second circle 35 in a closed circular area on second conductor tracks 25. Here, a grouping of the second contact elements 55 preferably comprises six individual second contact elements 55, this number being freely selectable. The first contact elements 44 form a separate grouping on the first conductor track 24. The first contact elements 44 are connected in Fig. 6 discussed in more detail.

[0021] Fig. Figure 6 shows a second embodiment of a power semiconductor module according to the invention in a schematic top view. As in Fig. As described in section 5, the second contact elements 55 are arranged in groups. The first contact elements 44 are located in a group within a closed circular area of ​​the first circle 34 on the first conductor track 24. In the present embodiment, there are nine individual first contact elements 44 arranged in a 3x3 configuration within the first circle 34, the number of which can be freely chosen. The individual first contact elements 44 can be arranged symmetrically or asymmetrically within the imaginary first circle 34.

[0022] Fig. Figure 7 shows a third embodiment of a power semiconductor module according to the invention in a schematic top view. A cross-shaped first conductor track 24 is applied centrally to the substrate 2 of the circuit arrangement 20.

[0023] Several first power semiconductor devices 14 are arranged on this first conductor track 24. The first conductor track 24 is at least partially surrounded by a third conductor track 26. Several second power semiconductor devices 15 are arranged on the third conductor track 26. In contrast to the Fig. 3 and Fig. In the embodiment described in Figure 4, the third conductor track 26 is more pronounced towards the edges of the substrate 2. Within an imaginary first circle 34, the first contact elements (44) of the first DC load terminal (4) are arranged in the first recesses (400), which are not explicitly shown in this figure. Outside the imaginary second circle 35, the second recesses (500) of the second contact elements (55) of the second DC load terminal (5) are arranged, which are also not explicitly shown in this figure.

[0024] Fig. Figure 8 shows a third embodiment of a power semiconductor module according to the invention in a schematic top view. A plurality of first contact elements 44 are arranged on the first conductor track 24. In the present embodiment according to the invention, the first contact elements 44 are arranged centrally on the first conductor track 24 between the first power semiconductor components 14. In the present embodiment according to the invention, the second contact elements 55 are each arranged on a second conductor track 25 at the corners of the substrate 2 of the circuit arrangement 20. A plurality of third contact elements 66 are arranged on a third conductor track 26. A grouping of the third contact elements 66 is arranged in a straight line in the x-direction parallel to an edge of the substrate 2 on a third conductor track 26.The number of second contact elements 55 in the corners and the number of third contact elements 66 in the grouping parallel to an edge of the substrate 2 are freely selectable; thus, a grouping of, for example, three of the second contact elements 55 can also be implemented in the corner areas. The first and second power semiconductor devices 14, 15 are conductively and metallurgically connected to the corresponding first, second, and / or third conductor track by means of schematically depicted bond connections.

[0025] Fig. Figure 9 shows a fourth embodiment of a power semiconductor module according to the invention in a schematic top view. A cross-shaped first conductor 24 is applied centrally to the substrate 2 of the circuit arrangement 20. The first conductor 24 is at least partially surrounded by a third conductor 26. The third conductor 26 is more pronounced towards the edges of the substrate 2. Groups of second contact elements 55 are arranged outside the second circle 35 in a closed circular area on the second conductor 25. Here, a group of the second contact elements 55 preferably comprises four or six individual second contact elements 55, whereby this number can be freely selected.

[0026] Fig. Figure 10 also shows a fourth embodiment of a power semiconductor module according to the invention in a schematic top view. As in Fig. As described in Figure 9, the second contact elements 55 are arranged in groups. The first contact elements 44 are located in a group within a closed circular area of ​​the first circle 34 on the first conductor track 24. In the present embodiment, there are nine individual first contact elements 44 arranged in a 3x3 configuration within the first circle 34, the number of which can be freely chosen. The individual first contact elements 44 can be arranged symmetrically or asymmetrically within the imaginary first circle 34.

[0027] Fig. Figure 11 shows a fifth embodiment of a power semiconductor module according to the invention in a schematic top view. A cross-shaped first conductor 24 is applied centrally to the substrate 2 of the circuit arrangement 20. Several first power semiconductor devices 14 are arranged on this first conductor 24. The first power semiconductor devices 14 are located at least partially within a first circle 34. The first conductor 24 is surrounded at least partially by a third conductor 26. Several second power semiconductor devices 15 are arranged on the third conductor 26. The third conductor 26 is more pronounced towards the edges of the substrate 2. The second power semiconductor devices 15 are located at least partially within a second circle 35.Outside the imaginary second circle 35, the second recesses 500, which are assigned to the second contact elements 55 of the second DC load connection 5, are arranged on the second conductor track 25 and are not explicitly shown in this figure.

[0028] Fig. Figure 12 also shows a fifth embodiment of a power semiconductor module according to the invention in a schematic top view. A plurality of first contact elements 44 are arranged on the first conductor track 24. In the present embodiment according to the invention, the first contact elements 44 are arranged between edge regions of the first conductor track 24 and the first power semiconductor components 14. A plurality of third contact elements 66 are arranged on a third conductor track 25. In the present embodiment according to the invention, the second contact elements 55 are each arranged on a second conductor track 25 in the corners of the substrate 2 of the circuit arrangement 20. In addition, a grouping of the third contact elements 66 is arranged in a straight line in the x-direction parallel to an edge of the substrate 2 on a third conductor track 26.The number of second contact elements 55 in the corners and of third contact elements 66 in the grouping parallel to an edge of the substrate 2 is freely selectable; thus, a grouping of, for example, three of the second contact elements 55 can also be implemented in the corner areas. The first and second power semiconductor devices 14, 15 are conductively and metallurgically connected to the corresponding first, second, and / or third conductor track by means of schematically depicted bond connections.

[0029] Fig. Figure 13 shows a sixth embodiment of a power semiconductor module according to the invention in a schematic top view. Groupings of second contact elements 55 are arranged outside the second circle 35 in a closed circular area on second conductor tracks 25 in corner regions of the substrate 2. The groupings of the second contact elements 55 preferably comprise four individual second contact elements 55, although this number can be freely selected. The first contact elements 44 form separate groupings on the first conductor track 24. The first conductor track 2 is at least partially surrounded by a third conductor track 26. A connection is made to the first contact elements 44 in Fig. 14 discussed in more detail.

[0030] Fig. Figure 14 also shows a sixth embodiment of a power semiconductor module according to the invention in a schematic top view. As in Fig.As described in Figure 13, the second contact elements 55 are arranged in groups on the second conductor track 25 at the edges of the substrate 2. The first contact elements 44 are grouped within a closed circular area of ​​the first circle 34 on the first conductor track 24. In the present embodiment, there are two individual first contact elements 44 located in the end regions of the cross-shaped first conductor track 24, and the number of first contact elements 44 can be freely selected. The individual first contact elements 44 can be arranged symmetrically or asymmetrically within the imaginary first circle 34. Reference symbol list 1 Power semiconductor module 14 first power semiconductor devices 15 second power semiconductor devices 2 Substrat 20 Circuit arrangement 24 first conductor track 25 second conductor track 26 third conductor track 3 cases 30 Cover area 34 first circle 35 second circle 4 first DC load connection 44 first contact elements 45 second contact elements 400 first exceptions 5 second DC load connection 55 second contact elements 500 second exceptions 6 AC load connections 66 third contact elements 7 ring-shaped area N Normal direction X X-direction Y Y-direction QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 196 30 173 A1

[0002] DE 10 2016 119 631 A1

[0003]

Claims

[1] Power semiconductor module (1) with a substrate (2) having a normal direction (N) and a circuit arrangement (20) in half-bridge topology, with a housing (3) having a cover surface (30) and with a first DC load terminal (4), a second DC load terminal (5) and an AC load terminal (6), wherein each load terminal is formed by at least three contact elements extending from the substrate (2) in a normal direction (N) through associated first and second recesses of the cover surface (30) and protruding therefrom, wherein the first recesses (400) associated with the first contact elements (44) of the first DC load terminal (4) are arranged on within a closed surface and the second recesses (500) associated with the second contact elements (55) of the second DC load terminal (5) are arranged outside this closed surface. [2] Power semiconductor module according to claim 1, wherein the closed area is circular or elliptical. [3] Power semiconductor module according to one of the preceding claims, wherein the second recesses (500) are arranged in an annular area (7) and the first recesses (400) are arranged within an inner boundary of this annular area (7). [4] Power semiconductor module according to one of the preceding claims, wherein first power semiconductor components (14) are arranged on a first conductor track (24) connected to the first DC load terminal (4) in a first circuit (34). [5] Power semiconductor module according to one of the preceding claims, wherein second power semiconductor devices (15) are arranged on a second conductor track (25) connected to the AC load terminal (6) in a second circuit (35). [6] Power semiconductor module according to claims 4 and 5, wherein the first circuit (34) is arranged completely within the second circuit (35). [7] Power semiconductor module according to any one of claims 4 to 6, wherein the first and second power semiconductor devices (14, 15) are designed as power transistors.

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