Power semiconductor module

Abstract

Power semiconductor module, including: a conductive carrier (102) comprising a first island (106a), an assembly island (104) and a termination island (106b) which are electrically insulated from each other, one or more power semiconductor dies (108a, 108b, 108c), each comprising a first side mounted on the mounting island (104) and a second side (110) opposite the first side, a bond wire (114) that loops from the first island (106a) to a contact pad (112) on the second side (110) of a first (108a) of one or more power semiconductor dies (108a, 108b, 108c) and terminates on the termination island (106b), and wherein the terminal island (106b) is positioned on an outer edge of the conductive support (102).

Description

TECHNICAL AREA

[0001] The present disclosure relates to a power semiconductor module, in particular a power semiconductor module with a termination island at an edge of a conductive support for terminating bond wires. BACKGROUND

[0002] Power semiconductor modules often feature one or more power semiconductor dies mounted on a conductive substrate. This substrate has multiple islands that provide specific routing structures. For example, some of the islands can be used for gate routing, with each gate island of the conductive substrate connected to a gate contact pad on the power semiconductor die, for instance, by a bond wire. The bond wire can be connected using known techniques such as ball bonding or wedge bonding. Typically, the bond wire is terminated on the gate island of the conductive substrate. When the bond wire is terminated, an additional surface area on the gate island is required to ensure reliable bond cutting. This increases the size of the gate island.The gate island can be positioned between the power semiconductor dies, allowing multiple gate contact pads of the power semiconductor dies to be connected on the same gate island. The gate island between the power semiconductor chips can obstruct load current routing between the power semiconductor chips, potentially affecting the operation and reliability of the power semiconductor module. Furthermore, some of the power semiconductor chips may be forced to position themselves near the edge of the conductive substrate, where they are more susceptible to delamination.

[0003] This present disclosure describes a power semiconductor module that can overcome the above-mentioned and other problems. SUMMARY

[0004] The present disclosure relates to a power semiconductor module comprising: a conductive support comprising a first island, a mounting island, and a termination island, which are electrically separated from one another; one or more power semiconductor dies, each comprising a first side mounted on the mounting island and a second side opposite the first side; a bond wire looping from the first island to a contact pad on the second side of the first of the one or more power semiconductor dies and terminating on a termination island. The termination island is positioned at an outer edge of the conductive support.

[0005] The present disclosure relates to a power semiconductor module comprising: a conductive carrier comprising a first island, a mounting island, and a termination island, which are electrically separated from one another; one or more power semiconductor dies, each comprising a first side mounted on the mounting island and a second side opposite the first side; a bond wire looping from the first island to a contact pad on the second side of the first of the one or more power semiconductor dies and terminating on a termination island. The bond wire forms a first bond on the first island, an intermediate bond on the contact pad of the first of the one or more power semiconductor dies, and a final bond on the second island, wherein a width of the first island measured parallel to the first bond is less than a width of the termination island measured parallel to the final bond.

[0006] The expert will recognize additional features and advantages upon reading the following detailed description and upon examining the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present disclosure is illustrated by way of example and without limitation in the figures of the accompanying drawings, in which the same reference symbols refer to similar or identical elements. The elements of the drawings are not necessarily to scale relative to one another. The features of the various illustrated examples may be combined, provided they are not mutually exclusive. Fig. Figure 1 illustrates an example of a power semiconductor module with a conductive substrate and a bond wire. The bond wire terminates on a termination island of the conductive substrate, which is positioned at an outer edge of the conductive substrate. Fig. Figure 2 illustrates another example of a power semiconductor module with non-parallel bonds on the islands of a conductive support. Fig. Figure 3 illustrates another example of a power semiconductor module with a bond wire connecting a gate contact pad of two power semiconductor dies and terminating on a termination island of a conductive support positioned on an outer edge of the conductive support. Fig. Figure 4 illustrates another example of a power semiconductor module. A gate contact pad of each of the power semiconductor dies is connected in parallel. Fig. Figure 5 illustrates another example of a power semiconductor module with a capacitor connected between a mounting island and a termination island of a conductive support. DETAILED DESCRIPTION

[0008] The examples described herein provide a power semiconductor module comprising a power semiconductor die and a conductive substrate. The conductive substrate has several islands that are electrically isolated from one another. The power semiconductor die, with a contact pad, is mounted on a mounting island of the conductive substrate. A bond wire connects the contact pad of the power semiconductor die to the conductive substrate. The bond wire forms different bonds: a first bond on a first island of the conductive substrate, a second bond on the contact pad of the power semiconductor die, and a destination bond on a termination island of the conductive substrate. The termination island is positioned at an outer edge of the conductive substrate. The first island has a smaller width, measured parallel to the first bond, compared to the width of the termination island, measured parallel to the destination bond.This allows the bond wire to be safely terminated without damaging the conductive substrate and the power semiconductor dies mounted on it.

[0009] Fig. Figure 1 illustrates an example of a power semiconductor module 100. The power semiconductor module 100 has a conductive support 102 with a plurality of islands, e.g., but not limited to, a mounting island 104, a first island 106a, and a destination island 106b, which are electrically separated from each other. The conductive support 102 is an electrically and / or thermally conductive support. In one example, the conductive support 104 can be a conductor frame. In another example, the conductive support 102 can form part of, e.g., but not limited to, a directly copper-bonded substrate (DCB) or a brazed active metal substrate (AMB), etc.

[0010] The power semiconductor module 100 further comprises a power semiconductor die 108a with a front face 110 and a back face opposite the front face 110. The back face of the power semiconductor die 108a may have a first load contact pad. The front face 110 of the semiconductor die 108a may have a second load contact pad 111 and a gate contact pad 112. The back face of the power semiconductor die 108a may be electrically and mechanically connected to the mounting island 104, e.g., but not limited to, soldering, sintering, or a conductive adhesive. Thus, the first load contact pad is electrically connected to the mounting island 104. The second load contact pad 111 may be connected to another island 106c of the conductive carrier 102 by an electrical connector 113. The electrical connector 113 may be, e.g., B., but not limited to a bonding tape or clamp or one or more bonding wires.

[0011] Optionally, the first load contact pad, the second load contact pad 111, and the gate contact pad 112 can be located on the front side 110; that is, the power semiconductor die 108a can be a lateral power semiconductor die. In this case, the rear side of the power semiconductor die 108a is mechanically connected to the mounting island 104. The first load contact pad can be connected to the mounting island 104 or to another island via a further electrical connector.

[0012] Furthermore, a bond wire 114 connects the conductive carrier 102 and the gate contact pad 112, as shown in Fig. Figure 1 shows the bond wire 114 looping from the first island 106a to the gate contact pad 112 and terminating on the termination island 106b. The termination island 106b is positioned at an outer edge of the conductive carrier 102; that is, a lateral side of the termination island 106b is located at the outer edge of the conductive carrier 102. The bond wire 114 forms a start bond 116a on the first island 106a, a stab bond 116b on the gate contact pad 112, and a destination bond 116t on the termination island 106b. The bonds 116a, 116b, and 116t can be formed by a wire bonding method, such as wedge bonding. Wedge bonding uses a wedge-shaped tool to deform the bond wire by pressing it onto the island 106a or 106b or the gate contact pad 112. Heat, pressure, and / or ultrasonic energy is then applied to a bonding area to form a solid-state bond between the bond wire and the island 106a or 106b or the gate contact pad 112.

[0013] When the bond wire 114 is terminated or cut on the termination island 106, a small end or stub 115 of the bond wire 114 remains attached to the target bond 116t to ensure a secure and reliable termination of the target bond 116t. This prevents damage to the target bond 116t, the conductive support 102, or the power semiconductor die 108a. The thicker bond wire may require a longer end or stub 115 compared to the thinner bond wire. The end or stub 115 extends along a length of the target bond 116t and may be approximately 0.1 to 1.0 mm long, depending on the thickness of the bond wire 114. However, the starting bond 116a does not require such an end or stub. Therefore, the starting bond 116a can be formed on a smaller island compared to the target bond 116t.Consequently, the width W1 of the first island 106a is smaller than the width W2 of the final island 106b. The width W1 of the first island 106a is measured parallel to a length of the starting bond 116a, and the width W2 of the final island 106b is measured parallel to a length of the final bond 116t. The lengths of the starting bond 116a and the final bond 116t are parallel to a side of their respective islands 106a and 106b. The width W1 of the first island 106a is the width of the side of the first island 106a facing the length of the starting bond 116a. Similarly, the width W2 of the final island 106b is the width of the side of the final island 106b facing the length of the final bond 116a. The lengths of the starting bond 116a and the closing bond 116t are parallel to each other, and thus the width W1 of the first island 106a is parallel to the width W2 of the closing island 106b.

[0014] The length of the starting bond 116a implies a maximum length of the starting bond 116a, and the length of the destination bond 116t implies a maximum length of the destination bond 116t. Due to the large width W2, sufficient space remains on the termination island 106b to ensure a secure and reliable termination of the bond wire 114. Furthermore, the spur or end 115 does not protrude onto the other islands 106 of the conductive carrier 110, thus reducing the risk of short-circuiting the islands of the conductive carrier 110. By reducing the width of the starting island 106a, space on the conductive carrier 102 away from the outer edge can be used efficiently, e.g., but not limited to, mounting the power semiconductor dies and / or routing the load current, etc.

[0015] Optionally, the width W1 of the first island 106a can be twice as small as the width W2 of the end island 106b. The width W1 of the first island 106a can be less than 2 mm, in particular less than 1.6 mm.

[0016] Optionally, the thickness of the bond wire 114 can be selected depending on the current requirements of the power semiconductor module 100. For example, the thickness of the bond wire 114 can be up to 300 µm, particularly 125 µm. The bond wire 114 can be made of a metal, e.g., but not limited to, copper, aluminum, or an alloy thereof.

[0017] Fig. Figure 2 shows another example of the power semiconductor module 200. The power semiconductor module 200 can have some or all of the features of the power semiconductor module 100. Fig. 1 and is described only in terms of differences. The width W1 of the first island 106a is orthogonal to the width W2 of the termination island 106b. The bond wire 114 can be pressed onto the termination island 106b to establish an initial contact. Then, the bond wire 114 is moved at an angle with respect to its extension between the gate contact pad 112 and the termination island 106b. After moving the bond wire 114 onto the termination island 106b, the target bond 116t is formed. As a in Fig. In example 2, the bond wire 114 is moved at an angle of 90°. Thus, the widths W1 and W2 of the first island 106a and the final island 106b, respectively, are orthogonal to each other.

[0018] Optionally, the lengths of bonds 116a, 116b may face adjacent sides of the respective islands 106a, 106b, instead of opposite sides of the respective islands 106a, 106b, as in Fig. 1 and Fig. 2 shown. In this case, the width of island 106a, 106b refers to the distance between opposite points on the respective islands 106a, 106b, with an imaginary line connecting the opposite ends of the respective islands 106a, 106b passing through the lengths of the respective bonds 116a, 116b.

[0019] Fig. Figure 3 illustrates another example of a 300-series power semiconductor module. The 300-series power semiconductor module can have some or all of the features of any of the 100-series or 200-series power semiconductor modules. Fig. 1 and Fig. 2. Therefore, the power semiconductor module 300 is described only in terms of its differences. The power semiconductor module 300 has an additional power semiconductor die 108b. The first island 106a is positioned between the power semiconductor dies 108a and 108b. The bond wire 114 connects the power semiconductor dies 108a and 108b to the conductive carrier 110. The bond wire 114 connects the gate contact pad 112 of the power semiconductor dies 108a and 108b in parallel. The bond wire 114 can loop through the power semiconductor dies 108a and 108b and the islands 106a and 106b. In this case, the bond 116a can be a stub bond 116a instead of the start bond. The bond wire 114 can form a start bond 116c on the gate contact pad 112 of the power semiconductor die 108b, followed by the stub bonds 116a, 116b on the island 106a and the gate contact pad 112 of the power semiconductor die 108a respectively, and then forms the destination bond 116t on the termination island 106b.By terminating the bond wire 114 on the termination island 106b, the gate contact pad 112 of the power semiconductor dies 108a, 108b can be connected without having to terminate the bond wire 114 between the power semiconductor dies 108a, 108b or using two separate bond wires to connect the gate control pads 112 of the power semiconductor dies 108a, 108b. This increases the efficiency of wire bonding in the power semiconductor module 300.

[0020] Fig. Figure 4 illustrates another example of a 400-series power semiconductor module. The 400-series power semiconductor module can have some or all of the features of any of the 100-series power semiconductor modules. Fig. 1. Therefore, the power semiconductor module 400 is described only in terms of its differences. The power semiconductor module 400 has power semiconductor dies 108a and 108c connected in parallel. The second contact pad 111 of the power semiconductor die 108c is connected to the island 108c by further electrical connectors 113. The gate contact pad 112 of the power semiconductor die 108c is connected to another island 106d of the conductive carrier 102. A bond wire 408 connects the island 106d, the gate contact pad 112 of the power semiconductor die 108, to another termination island 106e. The bond wire 408 forms a start bond 116d, a tap bond 116e, and a further destination bond 416t on the island 116d, the gate contact pad 112 of the semiconductor die 108c, and the termination island 106e, respectively. Optionally, the termination island 106e can also be positioned at the outer edge of the conductive carrier 102.Island 106d can have a width W3 measured with respect to the starting bond 116d analogous to the width W1 of island 106a measured with respect to the starting bond 116a, as in . Fig. 1 discussed. Similarly, the closing island 106e has a width W4 measured with respect to the target bond 416t analogous to the width W2 measured with respect to the target bond 116t of the closing island 106b, as in Fig. 1 and Fig. 2 discussed. The width W3 is smaller than the width w4.

[0021] The islands 106a and 106d can be short-circuited so that the gate contact pads 112 of the power semiconductor dies 108a and 108c can be switched on and off synchronously. The islands 106a and 106d can be connected by a connecting wire 406. The connecting wire 406 can form another start bond 116f on island 106a and another destination bond 418t on island 106d. The start bond 116d is formed at or near a first end 411 of island 106d, and the destination bond 418t is formed at or near a second end 413 of island 106d opposite the first end 411. The width W3 of island 106d is the width of island 106d at the first end 411. The width of island 106d at the second end 413 is greater than the width of island 106d at the first end 411. The conductive carrier 102 may have another island 106g connected to island 106d. Another connecting wire 410 connects islands 106d and 106g.A control terminal 416 can be mounted on the island 416. This allows the gate control pads 112 of the power semiconductor dies 108a and 108c to be switched on or off synchronously. This enables the power semiconductor dies 108a and 108c to have a uniform switching rate.

[0022] In one example, the connecting wire 406 can be thicker than the bonding wire 114, 408. For instance, the bonding wire 114, 408 can have a thickness in the range of 125 µm to 300 µm, and the connecting wire 406, 410 can have a thickness of 350 µm or 400 µm or more.

[0023] Optionally, islands 106a and 106d can be located within island 106c. Island 106c is configured to carry a load current to the power semiconductor dies 106a and 106c. By optimizing the widths of islands 106a and 106d, the cross-sectional area for the load current flow can be optimized.

[0024] Fig. Figure 5 illustrates another example of a 500-series power semiconductor module. The 500-series power semiconductor module can have some or all of the features of any of the 400-series power semiconductor modules. Fig.4. Therefore, the power semiconductor module 500 is described only in terms of its differences. The power semiconductor module 500 can include a capacitor 506 connected between the island 106b and the mounting island 104. The capacitor 508 is connected to the mounting island 104 via a first terminal 506a and to the termination island 106b via a second terminal 506b. Optionally, another capacitor 508 can be connected to the mounting island 104 via a first terminal 508a and to the termination island 106b via a second terminal 508b. The terminals 506a, 506b, 508a, 508b of the capacitors 506, 508 can be soldered, sintered, or welded to the conductive carrier 102. The capacitor 506, 508 can slow down the voltage transition in the respective power semiconductor die 108a, 108c when the power semiconductor dies 108a, 108c are switched on or off.When the power semiconductor dies 108a and 108c are switched on, a gate load current can flow between the gate contact pad 112 and the second contact pad of each power semiconductor die 108a and 108c. A path for a first gate load current for power semiconductor die 108a can include the islands 106g and 106a, the connecting wire 502, and the bond wire 114. A path for a second gate load current for power semiconductor die 108c can include the islands 106g and 106d, the connecting wires 406 and 502, and the bond wire 408. The first gate current path differs from the second gate current path. The capacitor 506, 508 can slow down the voltage transition of the respective power semiconductor dies 108a, 108c and thus reduce the voltage overshoot and undershoot during the switching transition.

[0025] In one example, the islands 106b, 106e can also be short-circuited, e.g., they can be connected by a portion of the conductive carrier 102 that is separated from the mounting island 102, or by an additional connecting wire. A terminal can be mounted on one of the islands 106b, 106e, thus providing an alternative path for the gate load current of the power semiconductor dies 106a, 106c. This reduces the stray inductance in the power semiconductor module 100 and thus increases the switching frequency of the power semiconductor module 100.

[0026] Further examples: Example 1: Power semiconductor module comprising: a conductive carrier comprising a first island, a mounting island, and a termination island, electrically isolated from each other; one or more power semiconductor dies, each comprising a first side mounted on the mounting island and a second side opposite the first side; a bond wire looping from the first island to a contact pad on the second side of the first of the one or more power semiconductor dies, terminating on a termination island. The termination island is positioned at an outer edge of the conductive carrier. Example 2: Power semiconductor module according to Example 1, wherein the bond wire forms a first bond on the first island, an intermediate bond on the contact pad of the first of one or more power semiconductor dies and a final bond on the second island, and wherein a width of the first island measured parallel to the first bond is less than a width of the final island measured parallel to the final bond. Example 3: Power semiconductor module according to Example 1 or 2, wherein the bond wire has a thickness of up to 300 µm, in particular 125 µm. Example 4: Power semiconductor module according to one of Examples 1 to 3, wherein the width of the first island is up to 1.5 times smaller than the width of the second island, in particular 1.5 times smaller than the width of the second island. Example 5: Power semiconductor module according to one of Examples 1 to 4, wherein the width of the first island is less than 2 mm, in particular 1.6 mm. Example 6: Power semiconductor module according to one of examples 1 to 5, wherein the first bond and the target bond do not extend in parallel. Example 7: Power semiconductor module according to one of Examples 1 to 6, further comprising a capacitor which is connected to the mounting island at a first terminal and to the termination island at a second terminal. Example 8: Power semiconductor module according to one of Examples 1 to 7, wherein the bond wire further connects the first island and the contact pad of a second of the one or more power semiconductor dies, and wherein the bond wire forms a third bond on the contact pad of a second of the one or more power semiconductor dies. Example 9: Power semiconductor module according to any one of Examples 1 to 8, further comprising: the conductive support, further comprising a third island and a second termination island, a second bond wire connecting a third island, a contact pad on a second side of a third of the one or the multiple power semiconductor dies and the second termination island of the plurality of islands, wherein the second bond wire forms a fourth bond on the third island and a fifth bond on the contact pad of a third of the one or the multiple power semiconductor dies and a second target bond on the second termination island, wherein a width (w3) of the third island measured parallel to the third bond is less than a width (w4) of the second termination island measured parallel to the second target bond and wherein the second termination island is positioned at the outer edge of the conductive support. Example 10: Power semiconductor module according to Example 9, wherein the second termination island is located on an outer surface of the conductive carrier. Example 11: Power semiconductor module according to Example 9 or 10, wherein the termination island and the second termination island are short-circuited. Example 12: Power semiconductor module comprising: a conductive carrier comprising a first island, a mounting island, and a termination island, electrically isolated from each other; one or more power semiconductor dies, each comprising a first side mounted on the mounting island and a second side opposite the first side; a bond wire looping from the first island to a contact pad on the second side of the first of the one or more power semiconductor dies and terminating on a termination island. The bond wire forms a first bond on the first island, an intermediate bond on the contact pad of the first of the one or more power semiconductor dies, and a final bond on the second island, wherein a width of the first island measured parallel to the first bond is less than a width of the termination island measured parallel to the final bond.

[0027] Example 12 can be combined with any of the examples from 1 to 11.

[0028] In this description, terminology such as "top", "bottom", "left", "right", "above", "below", etc., is used with reference to the orientation of the described figure. Those skilled in the art will recognize that components can be oriented in many directions and that such terminology is purely illustrative.

[0029] The power semiconductor module described herein incorporates one or more semiconductor dies. In particular, one or more power semiconductor dies may be involved. A power semiconductor die monolithically integrates one or more semiconductor power modules. A power semiconductor die can, for example, be a transistor, such as a transistor of any of the types listed below.

[0030] More specifically, power semiconductor dies can be configured, for example, as power MISFETs (Metal Insulator Semiconductor Field Effect Transistors), power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), JFETs (Junction Gate Field Effect Transistors), HEMTs (High Electron Mobility Transistors), power bipolar transistors, or power diodes such as PIN diodes or Schottky diodes.

[0031] Power semiconductor dies can be made from specific semiconductor materials such as Si, SiC, SiGe, GaAs, GaN, AlGaN, InGaAs, InAlAs, etc., and may also contain inorganic and / or organic materials that are not semiconductors. Power semiconductor dies can be of different types and manufactured using different technologies.

[0032] The power semiconductor module described herein comprises a conductive support. The conductive support can form part of a structured metal sheet, such as a conductor frame. The conductive support can form a mounting island of the structured metal sheet (e.g., conductor frame). The structured metal sheet can, for example, further include at least one island that is electrically isolated from the mounting island. The structured metal sheet can be made of any metal or metal alloy, such as copper or a copper alloy. In other embodiments, the conductive support can be arranged on a ceramic sheet, such as a metal-bonded ceramic substrate. For example, the metal-bonded ceramic substrate can be a DCB ceramic substrate (direct copper-bonded ceramic substrate) or an AMB ceramic substrate (hard-soldered active metal substrate).

[0033] The power semiconductor module described herein comprises bond wires and connecting wires. The bond wires connect the gate contact pad of the power semiconductor die to the conductive substrate using a wire bonding technique, such as, but not limited to, ball bonding, wedge bonding, or stub bonding. The bond wire terminates and forms the termination bond on an island of the conductive substrate that is electrically isolated from the mounting island. The termination bond features a stub wire end to ensure reliable bond wire cutting.

[0034] Although specific examples have been illustrated and described herein, the person skilled in the art will recognize that a multitude of alternative and / or equivalent implementations can replace the specific examples shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific examples discussed herein. Therefore, it is intended that this invention is limited only by the claims and their equivalents.

[0035] It should be noted that the description and drawings merely illustrate the principles of the proposed power semiconductor module. A person skilled in the art will be able to implement various arrangements which, although not expressly described or shown herein, embody the principles of the invention and are contained within its spirit and scope. Furthermore, all examples and embodiments set forth in this document are expressly intended primarily for illustrative purposes only, to assist the reader in understanding the principles of the proposed power semiconductor module. Moreover, all statements herein that provide principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include equivalents thereof.

Claims

[1] Power semiconductor module comprising: a conductive carrier (102) comprising a first island (106a), an assembly island (104) and a termination island (106b) which are electrically insulated from each other, one or more power semiconductor dies (108a, 108b, 108c), each comprising a first side mounted on the mounting island (104) and a second side (110) opposite the first side, a bond wire (114) that loops from the first island (106a) to a contact pad (112) on the second side (110) of a first (108a) of one or more power semiconductor dies (108a, 108b, 108c) and terminates on the termination island (106b), and wherein the terminal island (106b) is positioned on an outer edge of the conductive support (102). [2] Power semiconductor module according to claim 1, wherein the bond wire (114) forms a first bond (116a) on the first island (106a), an intermediate bond (116b) on the contact pad (112) of the first (108a) of one or more power semiconductor dies (108a, 108b, 108c) and a final bond (116t) on the termination island (106b), and where a width (W1) of the first island (106a) measured parallel to the first bond (116a) is smaller than a width (W2) of the final island (106b) measured parallel to the target bond (116t). [3] Power semiconductor module according to claim 1 or 2, wherein the bond wire (114) has a thickness of up to 300 µm, in particular 125 µm. [4] Power semiconductor module according to one of claims 1 to 3, wherein the width of the first island (106a) is up to 1.5 times smaller than the width of the termination island (106b), in particular 1.3 times smaller than the width of the termination island (106b). [5] Power semiconductor module according to any one of claims 1 to 4, wherein the width (W1) of the first island (106a) is less than 2 mm, in particular 1.6 mm. [6] Power semiconductor module according to any one of claims 2 to 5, wherein the first bond (116a) and the target bond (116t) do not extend parallel. [7] Power semiconductor module according to any one of claims 1 to 6, further comprising a capacitor (506) which is connected to the mounting island (104) via a first terminal (506a) and to the termination island (106b) via a second terminal (506b). [8] Power semiconductor module according to any one of claims 1 to 7, wherein the bond wire (114) further connects the first island (106a) and the contact pad (112) of a second (108b) of one or more power semiconductor dies (108a, 108b, 108c) and wherein the bond wire (114) forms a third bond (116c) on the contact pad (112) of a second (108b) of one or more power semiconductor dies (108a, 108b, 108c). [9] Power semiconductor module according to any one of claims 1 to 8, further comprising: the conductive carrier (102), further comprising a third island (106d) and a second terminal island (116e), a second bond wire (408) connecting the third island (106d) and a contact pad (112) on a second side of a third (108c) of the one or more power semiconductor dies (108a, 108b, 108c) and the second termination island (106e) of the plurality of islands (106), wherein the second bond wire (408) forms a fourth bond (116d) on the third island (106d) and a fifth bond (116e) on the contact pad (112) of a third (108c) of the one or more power semiconductor dies (108a, 108b, 108c) and a second target bond (416t) on the second termination island (106e), where a width (w3) of the third island (106d) measured parallel to the third bond (116c) is smaller than a width (w4) of the second terminal island (106e) measured parallel to the second target bond (416t) and wherein the second termination island (106e) is positioned at the outer edge of the conductive carrier (102). [10] Power semiconductor module according to claim 9, wherein the second termination island (106e) is located on an outer edge of the conductive support (102). [11] Power semiconductor module according to claim 9 or 10, wherein the termination island (106b) and the second termination island (106e) are short-circuited. [12] Power semiconductor module comprising: a conductive carrier (102) comprising a first island (106a), an assembly island (104) and a termination island (106b) which are electrically insulated from each other, one or more power semiconductor dies, each comprising a first side mounted on the mounting island (104) and a second side (110) opposite the first side, a bond wire (114) that loops from the first island (106a) to a contact pad (112) on the second side (110) of a first (108a) of one or more power semiconductor dies and terminates on a termination island (106b), wherein the bond wire (114) forms a first bond (116a) on the first island (106a), an intermediate bond (116b) on the contact pad (112) of the first (108a) of one or more power semiconductor dies and a final bond (116t) on the termination island (106b), and where a width (W1) of the first island (106a) measured parallel to the first bond (116a) is smaller than a width (W2) of the final island (106b) measured parallel to the target bond (116t).

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