ELECTRONIC COMPONENT

Description

[0001] An electronic component is specified.

[0002] For example, the electronic component can be designed as a power module with integrated functional structures. A power module is known, for example, from DE 10 2007 036045.

[0003] Efforts are being made to produce electronic components, particularly power modules, so-called "System Power Packages," that offer higher power density and greater mechanical and, in particular, thermomechanical resilience while miniaturizing. The trend, for example, in applications involving power semiconductors and LEDs (light-emitting diodes), is toward higher operating temperatures, namely from approximately 125°C to 175°C or more.

[0004] A glass and / or epoxy resin-based laminate technology for the production of so-called power PCBs (PCBs: "printed circuit boards") allows the integration of thermally conductive structures and passive and active components via a so-called "embedding process." However, one limitation is the inability to realize very small thermal resistances.

[0005] LTCC technology (LTCC: "low temperature cofired ceramics") based on glass ceramics is also very limited in the realization of thermally conductive paths due to the low thermal conductivity of glass ceramics.

[0006] AlN-based technologies, on the other hand, which can exhibit good thermal conductivities, are currently limited to surface-mounted components, for example wire-bonded or soldered components using SMD technology (SMD: "surfacemount device").

[0007] TSV (through-silicon via) technology enables a very high degree of integration. Due to its reduced strength (less than 200 MPa), this technology is limited for MEMS (microelectromechanical system) applications, but not for power modules with high thermomechanical stress profiles.

[0008] At least one object of certain embodiments is to provide an electronic component.

[0009] This object is achieved by a subject matter according to the independent patent claim. Advantageous embodiments and developments of the subject matter are characterized in the dependent claims and will further emerge from the following description and the drawings. Even though some embodiments are shown and described below, it is to be understood that the invention is not defined by the embodiments, but rather by the appended claims. Accordingly, the features from the claims are not to be regarded as optional, even if they are described here in the description in conjunction with words such as "can" or "preferably" or similar formulations.

[0010] According to at least one embodiment, an electronic component comprises at least one semiconductor chip. The semiconductor chip can, for example, comprise a transistor or be a transistor, for example an IGBT ("insulated-gate bipolar transistor") or a MOSFET ("metal oxide semiconductor field-effect transistor"). Furthermore, the semiconductor chip can also comprise another semiconductor component, in particular a power semiconductor component, and / or an optoelectronic semiconductor chip, such as a light-emitting diode chip, or be such a component. The semiconductor chip can, for example, be based on SiC, GaAs, or GaN, i.e., be a SiC, GaAs, or GaN chip.

[0011] Furthermore, the electronic component has a first carrier. A carrier can also be referred to here and below as a substrate, substrate carrier, or structural ceramic. The electronic component can also be referred to as a system package.

[0012] The first carrier has a cavity in which the semiconductor chip is arranged. The semiconductor chip is arranged partially countersunk in the cavity in the first carrier. In other words, the cavity has a depth that is less than the thickness of the semiconductor chip, so that the semiconductor chip partially protrudes from the cavity. Furthermore, the first carrier can have a flat surface that completely surrounds the cavity. Furthermore, the electronic component has a second carrier, wherein the second carrier is arranged on the first carrier and covers the semiconductor chip in the cavity. In particular, the semiconductor chip can thereby be hermetically enclosed in the cavity. The second carrier has a cavity in which the protruding part of the semiconductor chip is arranged. In this case, the cavity of the first carrier and the cavity of the second carrier or of the cooling element can particularly preferably be designed symmetrically.

[0013] The first carrier and / or the second carrier may have one or more of the following features: 1. An electrically conductive or electrically insulating ceramic material, in particular selected from AlN, BN, Al 2 O 3 , SiC, SiN, ZnO, BeO. 2. A metallic layer, particularly preferably comprising a material selected from Cu, Ag, W, Mo, Ti, Au, Ni, Zn and mixtures and alloys thereof, on at least one surface, in particular on at least one surface facing or facing away from the semiconductor chip, the other carrier or a cooling element. In particular, at least one of the carriers can have a ceramic material arranged between two metallic layers. 3. At least one electrical and / or thermal via and / or at least one internal electrode and / or conductor track, for example comprising a material selected from Cu, Ag, W, Mo, Ti, Au, Ni, Zn, preferably Ag and / or Cu and particularly preferably W, and mixtures and alloys with one or more of the materials mentioned.Electrical vias, internal electrodes, and conductor tracks can be used to form interconnection structures and interconnection levels in at least one of the carriers. Together with a suitable ceramic material, at least part of a carrier can also have electrical functionality, for example in the form of a varistor, a PTC element, and / or an NTC element. Thermal vias can be present to improve heat dissipation. Furthermore, the first and / or second carrier can be constructed using multilayer technology. In particular, the respective carrier can be manufactured using LTCC or HTCC technology. 4. At least one functional component. The at least one functional component can have or be a passive or active electronic or electrical element.In particular, the at least one functional component may comprise one or more of the following elements: a PTC element, an NTC element, a varistor, an arrester, a multilayer component, an inductance, a capacitor, an ohmic resistor.

[0014] The at least one functional component can be embodied in the form of a discrete component integrated into the first or second carrier. Alternatively, the at least one functional component can be formed by a partial region of the first and / or second carrier. In this case, the first or second carrier can comprise a ceramic material and internal electrode layers in said partial region, which form the functional component.

[0015] In the case of a discrete component, the at least one functional component can preferably be arranged in a cavity in the first or second carrier, alone or with at least one or more further functional components, in particular completely or partially recessed. The cavity can be adjacent to an upper side of the carrier or else be formed in the interior of the carrier. In particular, the at least one functional component and also the semiconductor chip can be interconnected by means of vias, internal electrodes and conductor tracks formed in the respective carrier. In particular, several identical or different functional components can be integrated in the first and / or second carrier.The one or more components can particularly preferably be hermetically encapsulated by being arranged in one or more cavities, for example by a cavity in the interior of a carrier or by a cavity on an upper side of a carrier which is covered and closed by another carrier, a metallic layer and / or a cooling element.

[0016] Furthermore, a cooling element can be arranged on a surface of the first and / or second carrier. The cooling element can particularly preferably be arranged on an upper side of the respective carrier facing away from the semiconductor chip. Furthermore, a cooling element can also be arranged on each carrier, which can be, for example, a heat spreader, an air cooler, and / or a water cooler. The cooling element can, for example, comprise a heat sink, preferably with or made of metal, which has cooling ribs, cooling fins, or other surface-enlarging structures on an outer side.

[0017] Furthermore, a connecting layer can be arranged at least between the first and second carriers and / or at least between a carrier and a cooling element. The connecting layer can comprise one or more of the following materials: Glass; metal, in particular one or more selected from micro-silver (µAg), for example for a sintered layer, Ag, Au, for example for a joining technology based on thermosonic bonding, AuSn, for example for a joining technology based on thermocompression bonding, SnAgCu, Cu-Si 3 N 4 -Cu, for example for soldered connections; ceramic, for example Si 3 N 4 or, preferably, AlN; thermally conductive adhesive, for example epoxy resin filled with Si 3 N 4 and / or AlN.

[0018] Furthermore, it may also be possible for the second carrier to have a printed circuit board (PCB) or to be designed as a printed circuit board.

[0019] The electronic component described here allows the integration of functional active and passive structures or components in a thermal substrate while simultaneously ensuring thermal and / or electrical connection of the structures or components, for example, through thermally and / or electrically conductive vias, to / in the substrate, as well as ensuring external contact options, particularly thermal and / or electrical, of the overall system created in this way. Furthermore, the electronic component can enable miniaturization with higher power density and higher mechanical, particularly thermomechanical, resilience, as well as operation at temperatures of up to 175°C and above.

[0020] The electronic component can also enable a good adaptation of the thermomechanical expansion between the functional components and the structural ceramic and the cooling system. Furthermore, simplified manufacturing can be achieved by using as few different connection or joining methods as possible for the system package, as well as by extensive use of so-called co-firing processes such as HTCC ("high-temperature co-fired ceramics") or LTCC ("low-temperature co-fired ceramics"), particularly for the production of the carriers and their electrical and / or thermal vias, conductor tracks, and internal electrodes in monolayer or multilayer structures.

[0021] Furthermore, the electronic component can enable the use of the substrate ceramic to implement passive functions, for example in particular a capacitor and / or arrester functionality, and in the case of a ZnO-based carrier in particular also a varistor functionality, through a suitable configuration of internal electrodes and possible cavity designs in the design of the substrate geometry, in particular also the substrate internal geometry, and possible further passive functionalities, in particular for example functionalities of a varistor and / or of PTC and / or NTC components (PTC: "positive temperature coefficient", PTC thermistor; NTC: "negative temperature coefficient", NTC thermistor), through a suitable choice of the substrate ceramic or parts of the substrate ceramic.

[0022] In particular, the electronic component described here may have one or more of the following features: Structure of the first carrier and / or the second carrier as a thermal substrate, in particular as a multilayer substrate, with one or more cavities and one or more integrated functional components. Direct thermal connection of the functional components to the cooling system, in particular one or more cooling elements. Hermetic encapsulation of the functional components. Symmetrical structure to compensate for thermomechanical stress, in particular through the use of the first carrier in combination with the second carrier and / or through the arrangement of two cooling elements on different sides of the first carrier or on different sides of the combination of both carriers. The improved thermal conductivity can be exploited through a symmetrical connection of the semiconductor chip.

[0023] The technology described herein enables the construction of an electronic component, in particular a compact power module such as an IGBT module or a power MOSFET module, with one or more of the following advantageous properties compared to the prior art: Greater mechanical robustness; higher power density; lower thermal resistance; improved adaptation of thermal expansion differences between components and thermal structural ceramics; better connection to cooling systems; simplified manufacturing process.

[0024] Further advantages, advantageous embodiments and further developments emerge from the exemplary embodiments described below in conjunction with the figures.

[0025] They show: Figure 1 shows a schematic representation of an electronic component according to one embodiment, Figure 2 shows a schematic representation of an electronic component according to a further embodiment and Figure 3 shows a schematic representation of an electronic component according to a further embodiment.

[0026] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be provided with the same reference numerals. The illustrated elements and their relative sizes are not to be considered to scale; rather, individual elements, such as layers, components, structural elements, and regions, may be exaggerated for clarity and / or clarity.

[0027] In Figure 1 an embodiment of an electronic component 100 is shown.

[0028] The electronic component 100 has a first and a second carrier 1, 1' in the form of thermally conductive substrates, each having a ceramic body with a thermally conductive ceramic material, for example AlN, in particular multilayer AlN, BN, Al 2 O 3 , SiC, SiN, ZnO and / or BeO. On the upper sides of the ceramic bodies, the carriers 1, 1' have metallic layers 6, for example a material selected from Cu, Ag, W, Mo, Ti, Au, Ni, Zn and mixtures and alloys thereof. In particular, the carriers 1, 1' can each be designed in the form of a sandwich structure, as shown, in which the ceramic body is arranged between the metallic layers 6.

[0029] The carriers 1, 1' are particularly formed using multilayer technology, in particular LTCC or HTCC, and have integrated internal electrodes and conductor tracks 9 as well as electrical and thermal vias 8. The conductor tracks and the electrical connection vias form interconnection structures and interconnection levels in the carriers 1, 1', while the thermal vias provide an integrated connection to a cooling system. For this purpose, cooling elements 2 are applied to the outer sides of the laminate made up of the first and second carriers 1, 1'. These cooling elements are designed purely as an example as air coolers with heat sinks with integrated cooling fins. Heat spreaders and / or water coolers are also possible. The thermal vias 8 of the second carrier 1' enable effective heat dissipation from the semiconductor chip 3 described below to the cooling element 2 arranged on the second carrier 1'.

[0030] The carriers 1, 1' have cavities 5 in the ceramic material and / or in a metallic layer 6 for integrating the semiconductor chip 3 and functional components 4. In the exemplary embodiment shown, the first carrier 1 has a cavity 5 in a metallic layer 6 and the ceramic material, in which the semiconductor chip 3, for example a transistor chip, such as an IGBT or a MOSFET, another power semiconductor component, or a light-emitting diode chip, is recessed and electrically and thermally connected via the interconnection structure described above. Active or passive functional components 4 are arranged in further similar cavities 5. The cavities 5 can particularly preferably be designed to fit precisely with respect to the semiconductor chip 3 or the components 4.

[0031] By arranging the second carrier 1' above the cavities 5 of the first carrier 1, the elements arranged in the cavities can be hermetically encapsulated. The second carrier 1' has a cavity 5 in a metallic layer 6, in which a functional component 4 is also arranged and electrically and thermally connected. By arranging one of the cooling elements 2 above it, this cavity can also be hermetically sealed. The cavities 5 can, as indicated in the case of the cavity 5 for the semiconductor chip 3, be filled with a potting compound 10 in the form of a thermally conductive filler material, for example a thermally conductive plastic material. Furthermore, the potting material can also comprise or be a finely ground ceramic powder, for example AlN, or a matrix material such as glass or plastic with an embedded ceramic powder, for example AlN.The functional components 4 can be the same or different and can be selected, for example, from PTC elements, NTC elements, varistors, arresters, multilayer components, inductors, capacitors, ohmic resistors.

[0032] Connecting layers 7 are arranged between the supports 1, 1' and between each of the supports 1, 1' and the cooling element 2 arranged thereon. The connecting layers 7 can all be of the same or different construction and can be made of, for example, glass, metal, or a ceramic material, such as Si 3 N 4 , AlN, Ag, Au, AuSn, and / or SnAgCu. Furthermore, a thermally conductive adhesive is also possible. Advantageous connecting technologies can be, for example, the following: Ceramic-glass-ceramic; ceramic-metal-ceramic, in particular silver sintering with µAg, thermosonic bonding with Au, thermocompression bonding with AuSn, Au, soldering with AuSn, SnAgCu, Cu-Si 3 N 4 -Cu.

[0033] In Figure 2A further exemplary embodiment of an electronic component 100 is shown, which, in addition to the semiconductor chip 3, which can be designed as a power semiconductor and / or as a flip-chip, has a plurality of functional components 4-1, ..., 4-9 formed in cavities in the first and second carrier 1, 1' or by partial regions of the first or second carrier 1, 1', wherein for the sake of clarity, the cavities are not provided with reference numerals. The number, connection method and interconnection of the shown functional components 4-1, ..., 4-9 are to be understood purely as examples and can be different from the Figure 2 shown embodiment.

[0034] The Figure 2 The electronic component 100 shown in FIG. 1 has no cooling elements in comparison to the previous embodiment. Alternatively, cooling elements such as those used in connection with Figure 1described. The first and second carriers 1, 1' are each manufactured using multilayer technology and form ceramic substrates with a substrate ceramic, for example a ceramic material mentioned in connection with the previous embodiment.

[0035] The functional components 4-1, ..., 4-9 can be the same or different and, for example, be selected from active or passive components such as PTC elements, NTC elements, varistors, arresters, multilayer components. In particular, in the exemplary embodiment shown, the components 4-1, ..., 4-5 are passive components. In the exemplary embodiment shown, the components 4-1 and 4-4 are both SMD-mounted (SMD standard), with component 4-4 being arranged in an electrically non-conductive potting 10. The components 4-2 and 4-5 are both laterally SMD-mounted, with component 4-5 also being arranged in an electrically non-conductive potting 10. The component 4-3 is vertically SMD-mounted. The component 4-6 is designed as an arrester.Component 4-7 is designed as a multilayer component with the substrate ceramic formed by a partial region of the second carrier 1', while component 4-8 is designed as a multilayer component with a functional ceramic integrated into the carrier 1'. Component 4-9 is a passive component designed as a flip-chip.

[0036] In addition to the components shown, functional components such as resistors, inductors and / or capacitors can be realized via pastes in the embodiments shown.

[0037] As an alternative to the embodiments shown, the Figure 1 The upper cooling element shown can also be arranged directly on the first carrier and thus directly on the cavities in the first carrier, so that the electronic component then has only one carrier. Furthermore, the upper half, i.e. in Figure 1 the second carrier and the cooling element arranged on it, may also not be present, so that the electronic component then takes up half the structure of the Figure 1 shown embodiment. Furthermore, the second carrier can also be designed as a PCB.

[0038] In the Figure 1 and 2 Embodiments of the electronic component are shown in which the semiconductor chip is arranged completely submerged in a cavity in the carrier. Such embodiments are not part of the claimed invention.

[0039] In Figure 3A further exemplary embodiment of an electronic component 100 is shown, in which the semiconductor chip 3 is arranged partially recessed in a cavity 5 in the first carrier 1. The cavity 5 has a depth that is less than the thickness of the semiconductor chip 3, so that the semiconductor chip 3 partially protrudes from the cavity 5. A second carrier 1' is arranged above it, which has a corresponding cavity 5 in which the protruding part of the semiconductor chip 3 is arranged. Particularly preferably, the cavity 5 of the first carrier 1 and the cavity 5 of the second carrier 1' can be designed symmetrically, so that, figuratively speaking, only half the space is provided in each of the carriers 1, 1'. Furthermore, it is also possible for the first carrier 1 and the second carrier 1' to be symmetrical with regard to their overall structure. List of reference symbols

[0040] 1 first carrier 1 second carrier 2 cooling element 3 semiconductor chip 4, 4-1, ..., 4-9 functional component 5 cavity 6 metallic layer 7 interconnect layer 8 via 9 conductor track 10 encapsulation 100 electronic component

Claims

1. Electronic component, comprising at least a first carrier, a second carrier and at least one semiconductor chip, wherein the first carrier comprises a cavity in which the semiconductor chip is arranged, and wherein the first carrier is constructed using multilayer technology comprising a ceramic body, wherein on the first carrier a second carrier is arranged, which covers the semiconductor chip in the cavity of the first carrier and which comprises a printed circuit board and / or is constructed using multilayer technology comprising a ceramic body, wherein the second carrier comprises a cavity, characterized in that the semiconductor chip is arranged partially countersunk in the cavity in the first carrier and has a portion which protrudes from the cavity of the first carrier and which is arranged in the cavity of the second carrier.

2. Component according to the preceding claim, wherein the cavity of the first carrier and the cavity of the second carrier are embodied symmetrically.

3. Component according to Claim 1 or 2, wherein the first and second carriers are symmetrical.

4. Component according to any of the preceding claims, wherein the first carrier and / or the second carrier comprise(s) one or more of the following features: - an electrically conducting or electrically insulating ceramic material, in particular selected from AlN, BN, Al2O3, SiC, SiN, ZnO, BeO; - a metallic layer, particularly preferably comprising a material selected from Cu and / or Ag, W, Mo, Ti, Au, Ni, Zn and mixtures and alloys thereof, on at least one surface, in particular on at least one surface facing towards or away from the other carrier; - at least one electrical and / or thermal via and / or at least one internal electrode and / or conductor track; - at least one functional component.

5. Component according to any of the preceding claims, wherein the first and / or second carrier comprise(s) thermal vias which provide an integrated thermal link to a cooling system.

6. Component according to any of the preceding claims, wherein a cooling element is arranged on a surface of the first and / or second carrier.

7. Component according to the preceding claim, wherein the cooling element is embodied as an air cooler with a heat sink with integrated cooling fins, as a heat spreader and / or as a water cooler.

8. Component according to any of the preceding claims, wherein a bonding layer is arranged at least between the first and second carriers and / or at least between one of the carriers and a cooling element.

9. Component according to the preceding claim, wherein the bonding layer comprises one or more of the following materials: - glass, - metal, in particular one or more selected from micro-silver, Ag, Au, AuSn, SnAgCu, Cu-Si3N4-Cu, - ceramic, for example Si3N4 and / or AlN - thermal conductive adhesive, for example epoxy resin filled with Si3N4 and / or AlN.

10. Component according to Claim 4 or any of Claims 5 to 9 referring back to Claim 4, wherein the at least one functional component comprises one or more of the following elements: - a PTC element, - an NTC element, - a varistor, - an arrester, - a multilayer component, - an inductor, - a capacitor, - an ohmic resistor.

11. Component according to Claim 4 or any of Claims 5 to 10 referring back to Claim 4, wherein the at least one functional component in the form of a discrete component part is arranged in a cavity.

12. Component according to Claim 4 or any of Claims 5 to 10 referring back to Claim 4, wherein the at least one functional component is formed by a sub-region of the first and / or second carrier.