STORAGE SYSTEM WITH A SENSOR ELEMENT FOR STORING ROTATION OR POSITION INFORMATION

Description

FIELD OF TECHNOLOGY

[0001] The invention relates to a storage system with a sensor element for storing rotation or position information, for example for an angle or length measuring device according to claim 1.

[0002] Angle measuring devices are used, for example, as rotary encoders to determine the angular position of two machine parts that rotate relative to each other. So-called multi-turn angle measuring devices are often used for this purpose, allowing absolute position determination over many revolutions.

[0003] In addition, length measuring devices are known in which a linear displacement of two machine parts that can be moved relative to each other is measured. Especially for length measuring devices with a comparatively long measuring length, several linear scales or identical scales are often arranged in a row. With such length measuring devices, absolute position determination should be possible, if possible, over the entire measuring length.

[0004] Such measuring devices or instruments for electric drives are often used to determine the relative movement or position of corresponding machine parts. In this case, the generated position values ​​are fed to subsequent electronics for controlling the drives via a corresponding interface arrangement.

[0005] For many applications of position measuring devices, especially angle measuring or length measuring devices, it is important to store at least the number of revolutions or rough positions in a non-volatile manner. STATE OF THE ART

[0006] EP 1 740 909 B1 describes a sensor element for a revolution counter in which domain walls are formed, the sensor element having a special spiral shape.

[0007] From the patent specification US 4,157,591 a storage device is known in which information can be stored in domain conductor structures using a rotating magnetic field.

[0008] US Patent Application Publication No. 2010 / 0301842 A1 discloses a revolution counter comprising domain wall conductors. These have loops with tapered protrusions directed toward the loop interior. SUMMARY OF THE INVENTION

[0009] The invention is based on the object of creating a storage system which comprises a domain wall conductor and which enables an operating behavior which is robust against external influences and which can be produced comparatively economically.

[0010] This object is achieved according to the invention by the features of claim 1.

[0011] Accordingly, the invention comprises a memory system having a sensor element for, in particular, the active storage of rotational or positional information. The sensor element comprises a domain wall conductor arranged on a substrate, wherein the domain wall conductor extends without intersections. The domain wall conductor, or its extension, further comprises a first region with a positive curvature and a second region with a negative curvature. Furthermore, the memory system comprises a component, for example, a drum with an angle scale or a length scale. The component comprises a magnet arrangement, wherein the component and thus also the magnet arrangement are movable in a first direction relative to the domain wall conductor. This causes a displacement of magnetic domains or domain walls.The memory system also includes a support magnet that is immovably arranged relative to the sensor element, wherein the support magnet is arranged such that the sensor element is located between the magnet arrangement and the support magnet. The magnet arrangement comprises a second magnet and a third magnet, wherein the magnetic pole of the second magnet is spaced apart from the magnetic pole of the third magnet in the first direction. The domain wall conductor has an extension in the first direction that is smaller than the distance between the magnetic poles of the second and third magnets.

[0012] Advantageously, the support magnet is arranged such that a connecting line between its north pole and its south pole is oriented in a second direction, wherein the second direction is oriented such that it has a component orthogonal to the first direction. In particular, the connecting line runs in a plane or in a surface parallel to the substrate.

[0013] The term active storage refers to storage for which the sensor element in question does not require any auxiliary electrical energy.

[0014] Both the magnets of the magnet arrangement and the support magnet are designed in particular as permanent magnets.

[0015] In the context of the present invention, domain wall conductors are, in particular, conductor tracks or nanowires made of a magnetizable material. Information can be stored in the form of oppositely magnetized regions (domains) in the domain wall conductors. The domains are separated by so-called domain walls, which can be shifted by magnetic fields, changing the positions of the domains. To determine their position, readout elements are arranged, past which the domains or domain walls are shifted. From a functional perspective, domain wall conductors can therefore also be considered a type of shift register.

[0016] Advantageously, the domain wall conductor is designed to be continuous and continuous. Furthermore, the domain wall conductor can also be designed to be continuous.

[0017] The domain wall conductor's course forms a continuous curve and exhibits neither a jump nor a peak, kink, or any other discontinuity. The term "continuous course" therefore refers to a domain wall conductor's course that is uniform and without abrupt changes in direction. Mathematically expressed, the domain wall conductor's course is continuous over its entire length and, in particular, differentiable, so that a unique tangent can be generated at every point along the domain wall conductor's course. In particular, the domain wall conductor only exhibits radii of curvature that are greater than 0.005 mm, in particular greater than 0.02 mm, and advantageously greater than 0.03 mm, along its course.

[0018] The crossing-free course of the domain wall conductor is to be understood in particular as meaning that the domain wall conductor does not cross itself in its course but is also not guided crossing one above the other in different layers.

[0019] The curvature is understood to mean the change in direction along the course of the domain wall conductor on the particularly flat substrate.

[0020] For a straight line, the curvature is zero because the direction of the line does not change. If the curvature is not zero, the curvature of the domain wall conductor can be defined with a sign with respect to the orientation of the normal bundle of the line curve. The curvature is positive if it curves in the direction of the unit normal vector field and negative if it curves in the opposite direction. For example, the first region with the positive curvature can be called a convex region, while the second region with the negative curvature can be called a concave region. Mathematically speaking, the domain wall conductor's path therefore has at least one inflection point.

[0021] Advantageously, the sensor element comprises a particularly planar substrate and the domain wall conductor is designed as a conductor track on the substrate.

[0022] In a further embodiment of the invention, the width of the domain wall conductor is less than 1000 nm, in particular less than 500 nm, advantageously less than 300 nm.

[0023] The thickness or layer thickness of the domain wall conductor is advantageously less than 200 nm, in particular less than 150 nm, in particular less than 60 nm.

[0024] Advantageously, the substrate comprises a glass layer and / or a silicon layer. In particular, if the substrate comprises a silicon layer, the sensor element can be constructed as part of a CMOS chip.

[0025] According to an advantageous variant, the sensor element further comprises readout elements, by means of which the local magnetization state of the domain wall conductor can be determined (at the respective position of the readout elements). Thus, a respective magnetization state of the domain wall conductor can be determined by the readout elements. The readout elements are arranged in a fixed position relative to the domain wall conductor.

[0026] In a further embodiment of the invention, the domain wall conductor is arranged in a layer between at least one of the readout elements and the substrate. Alternatively or additionally, at least one of the readout elements is arranged in a layer between the substrate and the domain wall conductor.

[0027] The readout elements are advantageously designed as GMR or TMR sensors.

[0028] The sensor element may have a plurality of domain wall conductors. In this case, the plurality of domain wall conductors may have different numbers of first regions or different numbers of second regions. For example, the sensor element may have a first domain wall conductor and a second domain wall conductor, wherein the first domain wall conductor has a first number of first regions and the second domain wall conductor has a second number of first regions.

[0029] Advantageously, the different numbers, i.e., the number of first regions of the first domain wall conductor and the number of first regions of the second domain wall conductor, are coprime. As is well known, the term coprime means that for the numbers in question (natural numbers), no natural number other than one exists that divides both numbers.

[0030] Advantageously, the sensor element and the support magnet are arranged in a common housing.

[0031] Advantageously, the magnetic field generated by the magnet arrangement is asymmetrical with respect to an axis running parallel to the first direction. This consideration applies to any imaginary axis running parallel to the first direction.

[0032] In a further embodiment of the invention, the magnetic field generated by the magnet arrangement is advantageously configured symmetrically with respect to an axis that runs parallel to a second direction. The second direction is oriented orthogonally to the first direction.

[0033] The axis that runs parallel to the first direction and the axis that runs parallel to a second direction lie in particular in a plane that is oriented parallel to the substrate.

[0034] According to the invention, the magnet arrangement of the storage system is designed as a magnet array which has magnets whose poles are arranged offset from one another in the first direction.

[0035] Advantageously, the domain wall conductor is axially symmetrical. In particular, the axis of symmetry in question can run parallel to the second direction or in the second direction.

[0036] The domain wall conductor has an extension in the first direction, and two magnetic poles have a center-to-center distance, with the extension being smaller than the center-to-center distance. This refers, in particular, to the maximum extension of the domain wall conductor in the first direction. The center-to-center distance can, in particular, be the distance between the effective centers of the magnets. For example, in the case of cylindrical bar magnets, the center-to-center distance can be viewed as the distance between the longitudinal axes of the cylindrical bar magnets.

[0037] The memory system is designed to have at least two domain walls, although designs with four or more domain walls can also be used.

[0038] The storage system can be used in conjunction with an angle measuring device, where, in particular, the number of revolutions is stored. Alternatively, the storage system or the sensor element can be used in conjunction with a linear scale. The scale can, in particular, comprise a first scale part and a second scale part. The first scale part and the second scale part can be arranged in a row, for example, along the first direction, so that a comparatively long measuring length can be achieved. In practice, more than just two scale parts can be arranged in a row. Magnet arrangements are then provided, offset from one another along the first direction. The sensor element makes it possible to store corresponding position information, so that it can be determined which of the scale parts is currently being scanned.

[0039] Advantageous embodiments of the invention can be found in the dependent claims.

[0040] Further details and advantages of the sensor according to the invention will become apparent from the following description of exemplary embodiments with reference to the accompanying figures. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The Figure 1 shows a top view of a sensor element, Figure 2 shows a detailed view of a domain wall conductor, Figure 3 shows a magnet of a magnet arrangement, Figure 4 shows a top view of the magnet arrangement according to a first exemplary embodiment, Figure 5 shows a side view of a component with the magnet arrangement, Figure 6 shows a top view of the component and the sensor element, Figure 7 shows a schematic view of the domain wall conductor, a support magnet, and the magnet arrangement in a first relative position to one another, Figure 8 shows a schematic view of the domain wall conductor, the support magnet, and the magnet arrangement in a second relative position to one another, Figure 9 shows a schematic view of the domain wall conductor, the support magnet, and the magnet arrangement in a third relative position to one another, Figure 10 shows a schematic view of the domain wall conductor, the support magnet, and the magnet arrangement in a fourth relative position to one another, Figure 11 shows a schematic view of the domain wall conductor,of the support magnet and the magnet arrangement in a fifth relative position to one another, Figure 12 shows a schematic view of the domain wall conductor, the support magnet and the magnet arrangement in a sixth relative position to one another, Figure 13 shows a schematic view of the domain wall conductor, the support magnet and the magnet arrangement in a seventh relative position to one another, Figure 14 shows a schematic view of the domain wall conductor, the support magnet and the magnet arrangement in an eighth relative position to one another, Figure 15 shows a schematic view of the domain wall conductor, the support magnet and the magnet arrangement in a ninth relative position to one another, Figure 16 shows a schematic view of the sensor element with a further domain wall conductor and the magnet arrangement according to a second exemplary embodiment. DESCRIPTION OF THE EMBODIMENTS

[0042] In the Figure 1A sensor element 1 is shown, which comprises a domain wall conductor 1.1 and a substrate 1.2, wherein the domain wall conductor 1.1 is applied to the substrate 1.2 in the form of a conductor track. In the presented embodiment, the substrate 1.2 has a mechanically supporting glass layer, wherein the substrate 1.2 is flat. Alternatively, the substrate 1.2 can have a silicon layer, in which case the sensor element 1 can be configured as part of a CMOS chip.

[0043] The domain wall conductor 1.1 comprises a soft magnetic material, for example a Ni-Fe alloy. The domain wall conductor 1.1 comprises a first section 1.11, in which the domain wall conductor 1.1 runs in comparatively tight loops, and a second section 1.12, in which the domain wall conductor 1.1 runs in an arc with a relatively large radius. The first section 1.11 and the second section 1.12 are directly adjacent to one another, so that the course of the domain wall conductor 1.1 is designed to be continuous. The domain wall conductor 1.1 is designed symmetrically with respect to an axis C, which is oriented perpendicular to a first direction x and parallel to a second direction y. The domain wall conductor 1.1 has a width X1 in the first direction x.

[0044] In the Figure 2a section of the domain wall conductor 1.1 is shown. It can be clearly seen that the domain wall conductor 1.1 has a first region A with a positive curvature and a second region B with a negative curvature. In other words: if one were to follow the course of the domain wall conductor 1.1, one would encounter a section with a right-hand curvature as well as a section with a left-hand curvature. In the course of the first section 1.11, a first region A with a positive curvature is followed by a second region B with a negative curvature and then again by a first region A, and so on. In the exemplary embodiment presented, there are regions with a straight course of the domain wall conductor 1.1 between the first regions A and the second regions B. In the second section 1.12, the sign of the curvature does not change.In the presented embodiment, the curvature or the radius of curvature is constant there.

[0045] In a layer structure on the substrate 1.2, in the vicinity of the domain wall conductor 1.1, according to the Figure 1 Readout elements 3, which can be, for example, GMR sensors or TMR sensors, with the aid of which the magnetization state of the adjacent domain wall conductor 1.1 can be determined.

[0046] If a magnetic field moving relative to the domain wall conductor 1.1 acts appropriately on the domain wall conductor 1.1, the domain walls W1, W2 are displaced within the domain wall conductor 1.1 or along the domain wall conductor 1.1. To form a suitable magnetic field, a magnet arrangement 1.3 ( Figure 4 ), which in the presented embodiment is designed as a magnet array consisting of several (permanent) magnets 1.31 to 1.33.

[0047] A first magnet 1.31 of the magnet arrangement 1.3 is arranged such that the magnetization is parallel to the second direction y, or the north pole of the first magnet 1.31 is offset from its south pole with respect to the second direction y. A second magnet 1.32 of the magnet arrangement 1.3 is arranged offset from the first magnet 1.31 in the first direction x at a distance of ½ x2. A third magnet 1.33 is placed opposite and offset from the first magnet 1.31 in the first direction x. In the presented embodiment, the second magnet 1.32 and the third magnet 1.33 are identically designed. Accordingly, the magnets 1.32, 1.33 are designed as cylindrical bodies, wherein the magnetic poles are arranged along the longest axis of symmetry in the sense of a bar magnet. By way of example for the second magnet 1.32 and the third magnet 1.33, Figure 3 the second magnet 1.32 is shown.

[0048] The domain wall conductor 1.1 has according to the Figure 1 in the first direction x has an extension X1. The distance X2 between the centers of the first magnet 1.31 and the second magnet 1.32 is dimensioned such that the extension X1 is smaller than the distance X2, X1 <X2 (bezogen auf den Mittenabstand der ersten und des zweiten Magneten 1.31, 1.32).

[0049] The magnet arrangement 1.3 is typically fixed to a component 2 or to a measuring standard. According to the exemplary embodiment, the component 2 has a substantially annular drum 2.1 (see Figures 5, 6). The magnet arrangement 1.3, consisting of the first, second, and third magnets 1.31, 1.32, 1.33, is mounted on its outer circumference. In the second direction y, i.e., offset axially therefrom, in the presented exemplary embodiment, a fine scale 2.12 is applied circumferentially to the drum 2.1. Alternatively, the magnet arrangement 1.3 can also be arranged on the inner circumference of a drum or a hollow shaft. In addition to the second magnet 1.32 and the third magnet 1.33, further magnets can be placed to homogenize the overall magnetic field.This measure reduces the susceptibility of the storage system to external magnetic fields and allows larger distance tolerances between component 2 and sensor element 1.

[0050] According to the Figure 6 The sensor element 1, i.e. the domain wall conductor 1.1 with the substrate 1.2, is located within a housing 1.5 with a radial air gap opposite the drum 2.1, in particular the magnet arrangement 1.3. In the presented embodiment, the housing 1.5 is stationary, while the component 2 with the magnet arrangement 1.3 is rotatably mounted, so that the magnet arrangement 1.3 moves relative to the sensor element 1 when the component 2 rotates in the first direction x (or opposite). The scale 2.12 can be decoded, for example, by an optical scanner, which is also housed in the housing 1.5.

[0051] Furthermore, a supporting magnet 1.6 is located in the housing 1.5, which is immovably arranged relative to the sensor element 1. The sensor element 1 is arranged directly opposite the movable magnet arrangement 1.3, and the supporting magnet 1.6 is arranged behind the sensor element 1, so that the sensor element 1 is arranged between the magnet arrangement 1.3 and the supporting magnet 1.6. The first magnet 1.31 is magnetized such that the connecting line between its north pole and its south pole is oriented parallel to the second direction y or parallel to the axis C. The supporting magnet 1.6 is arranged such that its magnetization is oriented antiparallel to the magnetization of the first magnet 1.31. Accordingly, the connecting line between the north pole and the south pole of the supporting magnet 1.6 also runs parallel to the second direction y, but the pole orientations are opposite (in the figures, the north pole of the first magnet 1.31 is at the top and the north pole of the supporting magnet 1.6 is at the bottom).

[0052] In the Figure 7 The principle diagram shows the magnet arrangement 1.3 and the domain wall conductor 1.1 with the supporting magnet 1.6 behind it in a first position relative to each other. The magnetic field is represented by a plurality of arrows. In the first position, the domain walls W1, W2 are in the positions according to the Figure 7 , where (as shown by the symbols) the first domain wall W1 is a so-called head-to-head domain wall and the second domain wall W2 is a so-called tail-to-tail domain wall.

[0053] The magnetic field generated by the magnet arrangement 1.3 is oriented with respect to an axis Ax ( Figures 4 and 7), which runs parallel to the first direction x, is asymmetrically designed. In contrast, the magnetic field 1.3 generated by the magnet arrangement is symmetrical with respect to an axis Ay, which runs parallel to a second direction. The second direction is oriented orthogonally to the first direction.

[0054] If the magnet arrangement 1.3 now moves in the first direction x according to the arrow in the Figure 7 When the magnet assembly 1.3 is moved relative to the domain wall conductor 1.1 (and thus also relative to the substrate 1.2 and the support magnet 1.6), a quasi-rotating magnetic field acts on the domain wall conductor 1.1. As a result, the positions of the domain walls W1, W2 shift. The displacement field is generated by moving the magnet assembly 1.3 past the domain wall conductor 1.1, with the magnetic field of the magnet assembly 1.3 being superimposed by the magnetic field of the support magnet 1.6.

[0055] In the Figure 8The domain wall conductor 1.1 is shown in a further position, where the magnetic field is shifted in the first direction x compared to the first position. Accordingly, the domain walls W1, W2 have changed their positions.

[0056] Analogously, as a result of a further displacement of the magnet arrangement 1.3 relative to the domain wall conductor 1.1 along the first direction x ( Figures 9 , 10, 11 ) the positions of the domain walls W1, W2 are further shifted. The positions of the domain walls W1, W2 according to the Figure 11 contain, for example, the information that the drum 2.1 or the component 2 is arranged in a different direction than the arrangement of the Figure 7has been moved so far that the magnet arrangement 1.3 has completely passed the domain wall conductor 1.1, which is the case, for example, after completing a first rotation. In particular, the magnetic fields of the first and second magnets 1.32, 1.33 cause the domain walls W1, W2 to be displaced beyond the second section 1.12, in which the domain wall conductor 1.1 extends in an arc with a relatively large radius.

[0057] Upon further movement or rotation of the component 2 in the same direction, the positions of the domain walls W1, W2 initially no longer change because the domain wall conductor 1.1 is always under the influence of the magnetic field of the support magnet 1.6, wherein the support magnet 1.6 is arranged immovably relative to the sensor element 1.

[0058] In the presented embodiment, the drum 2.1 or the component 2 should continue to rotate in the same direction (first direction x), accordingly, in the Figures 12 to 15 Depending on the positioning of the magnet arrangement 1.3 relative to the domain wall conductor 1.1 or to the sensor element 1, different positions of the domain walls W1, W2 are shown.

[0059] After each passage of the magnet arrangement 1.3 past the sensor element 1 or after each rotation of the component 2, the domain wall W1 has moved further to an adjacent first region A of the domain wall conductor 1.1. Accordingly, after each rotation, the domain wall W2 has moved further from a second region B to an adjacent second region B of the domain wall conductor 1.1 or it is located in the second section 1.12, in which the domain wall conductor 1.1 runs in an arc with a relatively large radius. If the starting point is on the arc with the relatively large radius, the domain wall W2 is moved into an arc in the second region B. In an arrangement according to the Figure 1 Accordingly, five consecutive passes or revolutions in one direction would be countable.

[0060] The magnetization directions within sections of the domain wall conductor 1.1 and thus the rough positions of the domain walls W1, W2 can be detected by the readout elements 3. This allows revolutions to be counted or the revolution information to be stored in an angle measuring device, even when no auxiliary power is available. This is important, for example, if a shaft is moved by a weight during a power failure. The domain walls W1, W2 are also shifted depending on the direction of rotation, so that the sensor element 1 can be reliably used in applications that allow both directions of rotation.

[0061] For the storage system to function, it is important that the domain wall conductor 1.1 is subjected to a magnetic field as the magnet arrangement 1.3 moves past along the first direction x, the direction of which changes depending on the x-position. In particular, rotating magnetic field lines or magnetic field directions are present here. Magnetic field lines on one side of the axis Ay ( Figure 7 ) have an opposite sense of rotation compared to magnetic field lines on the other side of one axis Ay. In particular, the magnetic field lines that cover areas A during the crossing and the magnetic field lines that cover areas B during the crossing have an opposite sense of rotation.

[0062] According to a second embodiment according to Figure 16A sensor element 1' can comprise a plurality of domain wall conductors 1.1, 1.1' in order to increase the number of countable revolutions, wherein the domain wall conductors 1.1, 1.1' each have, for example, a first domain wall W1, W1' and a second domain wall W2, W2'. In this case, it is advantageous if the plurality of domain wall conductors 1.1, 1.1' have different numbers of first sections 1.11, 1.11', in particular have different numbers of first regions A or have different numbers of second regions B. When using a plurality of domain wall conductors 1.1, 1.1', it is advantageous if the numbers of first regions A of the respective domain wall conductors 1.1, 1.1' are coprime. The plurality of domain wall conductors 1.1, 1.1' can be arranged offset from one another in the first direction x or nested within one another. In the Figure 16the domain wall conductors 1.1, 1.1' are designed such that they have four and five first regions A, wherein in the Figure 16 For the sake of clarity, domain wall conductors 1.1, 1.1' are shown with comparatively small numbers of first regions A. In practice, it is advisable to use domain wall conductors with more than just four first regions A. For example, four domain wall conductors can be used with 7, 9, 11, 13 first regions A, so that 9009 (7 x 9 x 11 x 13) turns would be countable.

Claims

1. Storage system comprising - a sensor element (1; 1') for storing rotation or position information, which sensor element comprises a domain wall conductor (1.1; 1.1') arranged on a substrate (1.2), wherein the course of the domain wall conductor (1.1; 1.1') is of a configuration without crossings and the domain wall conductor (1.1; 1.1') has a first region (A) with a positive curvature and a second region (B) with a negative curvature, - a component (2) which comprises a magnet arrangement (1.3) and can be moved in a first direction (x) relative to the domain wall conductor (1.1; 1.1'), wherein the magnet arrangement (1.3) is configured as a magnet array having magnets (1.31, 1.32, 1.33), namely a first magnet (1.31), a second magnet (1.32) and a third magnet (1.33), the poles of which are arranged with an offset with respect to one another in the first direction (x), wherein the first magnet (1.31) is arranged between the second magnet (1.32) and the third magnet (1.33) based on the first direction (x), - a supporting magnet (1.6) which is arranged immovably relative to the sensor element (1; 1'), wherein the sensor element (1; 1') is arranged between the magnet arrangement (1.3) and the supporting magnet (1.6), wherein the domain wall conductor (1.1; 1.1') has an extent (X1) in the first direction (x), wherein the magnet pole of the second magnet (1.32) is arranged at a distance (X2) from the magnet pole of the third magnet (1.32) in the first direction (x), wherein the extent (X1) is shorter than the distance (X2).

2. Storage system according to Claim 1, wherein the supporting magnet (1.6) is arranged such that a connecting line between its north pole and its south pole is oriented in a second direction (y), wherein this has a component orthogonal to the first direction (x).

3. Storage system according to one of the preceding claims, wherein the magnet arrangement (1.3) has a first magnet (1.31; 1.31"), wherein the supporting magnet (1.6) is arranged such that its magnetization is oriented anti-parallel to the magnetization of the first magnet (1.31; 1.31").

4. Storage system according to one of the preceding claims, wherein the course of the domain wall conductor (1.1; 1.1') is of a closed circumferential configuration.

5. Storage system according to one of the preceding claims, wherein the course of the domain wall conductor (1.1; 1.1') is of a continuous configuration.

6. Storage system according to one of the preceding claims, wherein the domain wall conductor (1.1; 1.1') is configured as a conductor track on the substrate (1.2).

7. Storage system according to one of the preceding claims, wherein the width (D) of the domain wall conductor (1.1; 1.1') is less than 1000 nm.

8. Storage system according to one of the preceding claims, wherein the substrate (1.2) has a glass layer and / or a silicon layer.

9. Storage system according to one of the preceding claims, wherein the storage system with a sensor element (1; 1') also has read-out elements (3) which can be used to determine the local magnetization state of the domain wall conductor (1.1; 1.1').

10. Storage system according to Claim 9, wherein the read-out elements (3) are configured as GMR or TMR sensors.

11. Storage system according to one of the preceding claims, wherein the sensor element (1') has a plurality of domain wall conductors (1.1; 1.1') having different numbers of first regions (A) or different numbers of second regions (B).

12. Storage system according to Claim 11, wherein the different numbers of first regions (A) are co-prime.

13. Storage system according to one of the preceding claims, wherein the sensor element (1; 1') and the supporting magnet (1.6) are arranged in a common housing (1.5).