METAL SUBSTRATE STRUCTURE AND METHOD FOR PRODUCING A METAL SUBSTRATE STRUCTURE FOR A SEMICONDUCTOR POWER MODULE AND SEMICONDUCTOR POWER MODULE
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- HITACHI ENERGY LTD
- Filing Date
- 2021-03-10
- Publication Date
- 2026-05-06
AI Technical Summary
Conventional insulated metal substrates face challenges in providing stable functionality and reliability, particularly in high voltage applications, due to mechanical and thermo-mechanical stress leading to voids, cracks, delamination, and dielectric breakdown at the edges of circuit metallization.
A metal substrate structure with a stress relief structure, featuring recesses, protrusions, and structured edges, is integrated into the metal top layer to absorb and dissipate mechanical and thermo-mechanical stress, enhancing adhesion between the metal and dielectric layers, thereby preventing voids and cracks.
The stress relief structure improves mechanical stability, reduces the risk of partial discharge and dielectric breakdown, and extends the module life, enabling reliable operation in high voltage applications while maintaining heat dissipation characteristics.