SEMI-CONDUCTOR ARRANGEMENT

DE602023014810T2Active Publication Date: 2026-04-08SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2023-10-24
Publication Date
2026-04-08

AI Technical Summary

Technical Problem

Semiconductor elements are vulnerable to damage from electrostatic discharge (ESD) currents introduced through pads, despite the presence of ESD protection circuits, as these currents can bypass the protection circuits and flow through semiconductor elements.

Method used

A gate-off circuit is connected to the gates of semiconductor elements, redirecting ESD-induced currents to an ESD protection circuit, preventing damage by blocking current paths through the semiconductor elements.

Benefits of technology

The gate-off circuit effectively diverts ESD currents away from semiconductor elements, protecting them from damage by ensuring currents flow through the designated ESD protection pathways.

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