Use of a metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate as a patterning agent
Patent Information
- Application Number
- EP2023761778
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-09-22
- Filing Date
- 2023-08-18
- Publication Date
- 2025-07-30
AI Technical Summary
Conventional chemically amplified resists are transparent at EUV wavelengths, leading to reduced sensitivity and line edge roughness in semiconductor chip production, necessitating the development of novel resists with high EUV absorbance and durability as etch masks.
The use of metal and/or metalloid-comprising ketoacidoximates as patterning agents in photolithography and electron beam lithography, which exhibit high EUV absorbance and sensitivity, serving as durable etch masks and enabling direct patterning of functional materials.
The metal and metalloid-comprising ketoacidoximates demonstrate improved sensitivity and low line edge roughness, achieving high-resolution patterning and serving as effective etch masks in semiconductor production, compatible with both EUV and electron beam lithographies.
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Figure 1.1
Abstract
Description
[0001] Use of a metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate as a patterning agent
[0002] The present invention relates to the use of specific chemical compounds as patterning agents in the photolithography and / or electron beam patterning . It can be used in the field of semiconductor chip production, particularly but not limited to EUV wavelengths , and direct patterning of functional materials for applications such as masks in semiconductor industry, sensors , photonics or catalysis .
[0003] Photolithography has been the bedrock of fabricating devices in micro- and nanometer regime in the semiconductor industry . It uses a resist, usually a photosensitive polymeric material , for imaging and pattern transfer to a substrate either via the process of plasma etching or by lift-off after metal (oxide) deposition . The pursuit of ever-shrinking critical dimensions from micrometers to a few tens of nanometers presently has been made possible by adopting increasingly shorter wavelength imaging radiation ( 193 nm since early 2000s ) coupled with some technological ingenuity in the last decade such as immersion lithography and multiple exposure patterning . Achievement of higher resolution from a simpler direct photo-exposure comes at a large increase in capital cost as it needs shorter wavelength imaging radiation and a suitable resist to take its advantage .
[0004] In recent years , EUV technology ( 13 . 5 nm wavelength) has emerged as the strong alternative to ArF immersion lithography for high volume manufacturing . To take the advantage of the EUV light source , which suffers from limited power, requires development of novel resist materials that possess high sensitivity at this wavelength, capable of high resolution, exhibit low line edge roughness (LER) , and at the same time preserving the pattern fidelity and uniformity . Chemically amplified resists (CAR) , which are primarily organic, have served very well in 248 nm and 193 nm lithography but are very transparent in EUV wavelength .
[0005] This represents a maj or problem as it leads to the reduction of sensitivity of these resists . On other hand, incorporation of certain metals in thin resists lead to high EUV absorbance resulting in improved sensitivity, mitigation of photon-shot- noise effects , and at the same time serve as a durable etch mask .
[0006] For these reasons , new resists containing atoms that show increased absorbance at the EUV wavelength have been put forth as a substitute for CARs .
[0007] The graph in Figure 13 provides theoretically calculated EUV absorption cross-section of various elements . The data here provide guidelines for the choice of elements in EUV resists that would increase the absorption of radiation . Typically, elements with higher EUV absorption cross-section are preferred .
[0008] It is therefore the obj ective of the present invention to provide a patterning agent, such as a photo-resist, that has high EUV absorbance resulting in improved sensitivity, high patterning resolution and low line edge roughness , and at the same time serve as a durable etch mask in semiconductor chip production . It would desirable when the same patterning agent could also serve as an electron beam-sensitive resist in electron beam lithography for di rect patterning of functional materials , such as high-refractive index nanopatterns for photonic applications or high-absorbance materials for EUV photomasks .
[0009] This obj ective is achieved according to the present invention by the use of a metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate as a patterning agent in photolithography and electron beam lithography with applications in the field of semiconductor chip production, and direct patterning of functional materials for mask production, sensors , photonics or catalysis .
[0010] Surprisingly, metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate show exactly the desired properties in terms of high EUV absorbance or electron beam sensitivity that results in the desired sensitivity .
[0011] Particularly, EUV lithography uses a shorter wavelength ( 13 . 5 nm) radiation that necessitates development of novel photoresists sensitive to this wavelength . Since at this wavelength, conventional carbon-based resists are fairly transparent, novel resists that contain heavier elements that highly absorb EUV radiation are needed . It is logical to incorporate in resists metals such as tin with high absorption cross-section at EUV wavelength (Figure 1 ) to improve their sensitivity . However, the exposure of the resist happens via the secondary electrons generated in the resist volume during the EUV exposure . How effective these electrons are in breaking bonds in the resist also matters . Therefore, in the present invention, instead of focusing on metals containing high EUV absorption cross-section, the efficacy of secondary electrons has been considered in exposure of resist using empirical means . For example , nickel and zinc have similar EUV absorption cross-sections . However, one presently preferred resist containing zinc needs a much lower dose for exposure than the nickel resist with the same ligand environment, suggesting that the interaction between secondary electrons play a maj or role in the irradiation process .
[0012] Typically, a divalent metal or metalloid or metal-compound comprising ketoacidoximate can have one of the following structural forms :
[0013] wherein :
[0014] Ri and R2stand for hydrogen (H) , organic groups , such as aliphatic C3to Ci0, aromatic, cyclic, polymerizable, such as acrylate, methacrylate , vinyl , etc . , or a combination of these; and
[0015] M stands for a central metal or metalloid atom, which can be monovalent, divalent, trivalent, tetravalent, pentavalent or higher, that is attached to the ketoacidoximate group in monodentate, bidentate, or tridentate fashion, and / or for a central metal atom being attached to other groups such as oxide, hydroxide , etc . , or M stands for a central metal atom being attached to a further group R3which is a carboxylate such as acetate, etc . , a glycinate, a xanthate, an alkyl , an aryl , or the like .
[0016] Preferably, the metal atom selected from a group comprising zinc, indium, aluminium, nickel , magnesium, and tin .
[0017] Further preferred embodiments of the present invention are listed in the depending claims 2 to 15 .
[0018] Preferred embodiments of the present invention are described hereinafter in more detail with reference to the attached drawings which depict in :
[0019] Figure 1 Dose-to-gel curves of zinc ( I I ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; ( c) Sensitivity values of the resist obtained with various developers ; Figure 2 EUV lithography of (a) half pitch 22 nm (325 mJ / cm2), (b) half-pitch 18 nm (297 mJ / cm2), and (c) half pitch 16 nm (290 mJ / cm2) lines using zinc (II) methoxyimino propionate resist;
[0020] Figure 3 Electron beam lithography of 5 nm wide lines patterned using zinc (II) methoxyimino propionate resist;
[0021] Figure 4 Dose-to-gel curves of indium (III) hydroxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
[0022] Figure 5 EUV lithography of (a) half pitch 22 nm (222 mJ / cm2), (b) half-pitch 18 nm (223 mJ / cm2), and (c) half pitch 16 nm (199 mJ / cm2) lines using indium(III) hydroxyimino propionate resist;
[0023] Figure 6 Dose-to-gel curves of indium (III) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
[0024] Figure 7 EUV lithography of (a) half pitch 22 nm (193 mJ / cm2), (b) half-pitch 18 nm (194 mJ / cm2) , and (c) half pitch 16 nm (173 mJ / cm2) lines using indium(III) methoxyimino propionate resist;
[0025] Figure 8 Dose-to-gel curves of aluminium ( III ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
[0026] Figure 9 EUV lithography of (a) half pitch 50 nm (64 mJ / cm2), and (b) half-pitch 35 nm (51 mJ / cm2) using aluminium ( III ) methoxyimino propionate resist; Figure 10 Dose-to-gel curves of nickel (II) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
[0027] Figure 11 Dose-to-gel curves of magnesium ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
[0028] Figure 12 Dose-to-gel curves of tin (II) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam; (c) Sensitivity values of the resist obtained with various developers;
[0029] Figure 13 Atomic absorption cross section oaat EUV (A = 13.5 nm) of elements with atomic number Z from 1 to 86;
[0030] Figure 14 EUVL Dose-to-Gel Curves for a Zn (MIP) 2.2H2O Resist;
[0031] Figure 15 EUV patterning results for Zn(MIP)2.2 H2O Resist without underlayer;
[0032] Figure 16 EUV patterning results for Zn(MIP)2(Anhydrous) without underlayer;
[0033] Figure 17 EUV patterning results for Zn(MIP)2(Anhydrous) with underlayer SHT101;
[0034] Figure 18 EUV patterning results for Zn(MIP)2(Anhydrous) with underlayer SHT101 and post-exposure bake at 80 °C and 60 sec;
[0035] Figure 19 EUV patterning results for Zn(MIP)2(Anhydrous) with underlayer PRE102 and post-exposure bake at 90 °C and 60 sec; Figure 20 EUV patterning results for Zn (MIP) 2 . 2 H2O Resist without underlayer and with developer Anisole ; and
[0036] Figure 21 EUV patterning results for Zn (MIP)2(Anhydrous ) without underlayer and with developer Anisole .
[0037] In the following, a number of methods for making metal- and metalloid-containing compounds for lithographic patterning of substrates , such as Extreme Ultraviolet (EUV) and Electron Beam Lithographies , are explained in more detail . In general , the compound family of the ketoacidoximates can be used in these applications in terms of a photoresist, an electron beam resist, a precursor for metal or metal oxide patterning .
[0038] Since metal / metalloid ketoacidoximates are known in the art, one would have expected them to be commercially available, but they aren' t so far . Thus , they have to be synthesized in the laboratory . The first step involves condensation of an a-keto acid with an amine to give a-oximino acid . a-KETO ACID AMINE a-OXIMINO ACID
[0039] The a-oximino acid is then reacted with a metal / metalloid salt (e . g . , nitrate or chloride) in the presence of a suitable base to given metal / metalloid ketoacidoximate as shown below . The reaction can be carried out in either organic or an aqueous medium .
[0040] Synthesized metal / metalloid ketoacidoximates are found to be sensitive to energetic electrons ( 0 . 5 to 300 kV) , extreme ultraviolet (EUV) radiation ( 92 eV, 13 . 5 nm) and other types of energetic radiation below 250 nm wavelength . Such sensitivity to electrons and EUV radiation (among others ) have made them patternable and henceforth they will be called "metal ( loid) -containing patterning agents" or simply "patterning agents" .
[0041] Since the condensation involves a-keto acid and an amine to give a-oximino acid, the organic groups attached to amine (Ri) and a-keto acid (R2) can be individually and independently modified . These groups can be hydrogen (H) , aliphatic (Ci-Cio) , aromatic, cyclic, polymerizable (acrylate, methacrylate, vinyl , etc . ) , or a combination of these . First, we provide representative examples of modification of organic groups attached to amine (Ri, light grey) are presented which keeping group in R2(dark grey) as H .
[0042] GLYOXYLIC ACID METHOXYLAMINE GLYOXYLIC ACID METHYL OXIME
[0043] GLYOXYLIC ACID BENZYL HYDROXYLAMINE GLYOXYLIC ACID BENZYL OXIME Next, some representative examples of modification organic groups attached to a-keto acid <R2) are provided which keeping group in R fixed .
[0044] PYRUVIC ACID AMINE PYRUVIC ACID OXIME
[0045] PHENYLGLYOXYLIC ACID AMINE PHENYLGLYOXYLIC ACID OXIME
[0046] Further flexibility can also be obtained by adding a halogen group to a-keto acid . Representative examples of pyruvic acid are given below .
[0047] CHLORO-PYRUVIC ACID IODO-PYRUVIC ACID From the above representative examples , one can see that there are at least 20 possible ways in which the organic environment around a central metal atom can be modified . Such a versatility in synthesis of an a-oximino acid and finally its metal or metalloid salt from it provides tailorability of the patterning agents ' s sensitivity ( for example in terms of a photoresist) to energetic electrons and photons , solubility in organic solvents , and film formability on a silicon substrate . At least 40 patterning agents resists of different metals and metalloids were synthesized using the above-mentioned procedure, out of which 30% were spin-coatable and patternable using electrons and photons . Following are the representative examples of the resists that were prepared by synthetic procedure described above which were found to be patternable .
[0048] Zinc methoxyimino propionate Nickel methoxyimino propionate
[0049] Magnesium methoxyimino propionate Tin methoxyimino propionate
[0050] Aluminium methoxyimino propionate
[0051] Although the above-mentioned representative examples show a central metal atom that is attached to the ketoacidoximate group, it is also possible to have the central atom attached to other groups as well such as oxide, hydroxide, or any group R3such as carboxylate (acetate , etc . ) , glycinate, xanthate, alkyl , aryl , etc . The central metal atom could be monovalent, divalent and above .
[0052]
[0053] Adducts with Lewis bases bonded to central metal atoms are also possible.
[0054] The present invention also provides for a process for patterning a semiconductor surface by coating the surface with the patterning agent and the irradiating of the coated surface with a predefined photon irradiation pattern or electron beam pattern. In this process, appropriate amounts of patterning agents, here photoresists, were dissolved in a solvent, for example 2 -methoxyethanol, to give concentrations between 0.0125 gm / ml to 0.1 gm / ml. For film thicknesses below 50 nm, concentrations in the range of 0.0125 gm / ml to 0.025 gm / ml are found to be suitable. These solved resists were spin-coated on pre-cleaned semiconductor substrates, for example silicon substrates, at an appropriate spin-speed, for example a spinspeed of 1800 rpm. They were then exposed to photon radiation, for example EUV radiation, through a mask at a photon source or to electrons, for example 100 kV electrons, inside an electron beam writer. The photon radiation can be generated for example in a synchrotron, for example at the Swiss Light Source (SLS) in Villigen PSI, Switzerland (visit for more details on the SLS at www.psi.ch) .
[0055] For studying the sensitivity of resists to plot dose-to-gel curves, they were exposed at various doses using EUV or electrons. These resists were developed with various organic solvents such as methanol, ethanol, iso-propanol, 2- methoxyethanol, l-methoxy-2-propanol, 1-butoxyethanol, 3- methoxy-l-butanol, 2-methoxyethyl acetate, and l-methoxy-2- propyl acetate. They were rinsed using the same solvent in which they were developed. For dose-to-gel curves, 10 seconds of development, immediately followed by 5 second rinse, and then blow-drying using nitrogen. The resists showed a negative tone behavior after exposure.
[0056] For EUV patterning, the resists were exposed through a grating mask. On the other hand, predefined patterns were used for electron beam lithography.
[0057] Figure 1 shows dose-to-gel curves of zinc (II) methoxyimino propionate resists exposed to (a) EUV and (b) electron beam. Figure 1 (c) shows the sensitivity values of the resist obtained with various developers .
[0058] Figure 2 shows EUV lithography of (a) half pitch 22 nm (325 mJ / cm2) , (b) half-pitch 18 nm (297 mJ / cm2) , and (c) half pitch 16 nm (290 mJ / cm2) lines using zinc (II) methoxyimino propionate resist .
[0059] Figure 3 shows an electron beam lithography of 5 nm wide lines patterned using zinc (II) methoxyimino propionate resist.
[0060] Figure 4 now shows the dose-to-gel curves of indium (III) hydroxyimino propionate resist exposed to (a) EUV and (b) electron beam. Figure 4 (c) shows the sensitivity values of the resist obtained with various developers. Figure 5 shows the EUV lithography of (a) half pitch 22 nm (222 mJ / cm2) , (b) halfpitch 18 nm (223 mJ / cm2) , and (c) half pitch 16 nm (199 mJ / cm2) lines using indium (III) hydroxyimino propionate resist. Features here are slightly smaller than the designed half pitch due to underdosing.
[0061] Figure 6 shows the dose-to-gel curves of indium (III) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam. Figure 6(c) shows the sensitivity values of the resist obtained with various developers. indicates data from poor development characteristics. 'N / A' indicates that data could not be acquired due to excessive scum on the surface . Figure 7 shows the EUV lithography of (a) half pitch 22 nm ( 193 mJ / cm2) , (b) half-pitch 18 nm ( 194 mJ / cm2) , and ( c) half pitch 16 nm ( 173 mJ / cm2) lines using indium ( III ) methoxyimino propionate resist . Features here are slightly smaller than the designed half pitch due to underdosing .
[0062] Figure 8 shows the dose-to-gel curves of aluminium ( III ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam . Figure 8 ( c) shows the sensitivity values of the resist obtained with various developers . MeOH = methanol ; 1M2P = l-methoxy-2-propanol ; 3M1B = 3-methoxy-l-butanol ; 2-MEA = 2- methoxyethyl acetate . Figure 9 shows the EUV lithography of (a) half pitch 50 nm ( 64 mJ / cm2) , and (b) half-pitch 35 nm (51 mJ / cm2) using aluminium ( III ) methoxyimino propionate resist . The resist shows excessive scum between the lines at lower pitches .
[0063] Figure 10 shows the dose-to-gel curves of nickel ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam . Figure 10 ( c) shows the sensitivity values of the resist obtained with various developers . 'N / A' indicates that data could not be acquired due to no feature seen on the surface .
[0064] Figure 11 shows the dose-to-gel curves of magnesium ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam . Figure 11 ( c) shows the sensitivity values of the resist obtained with various developers . 'N / A' indicates that data could not be acquired due to no development at all .
[0065] Figure 12 shows the dose-to-gel curves of tin ( II ) methoxyimino propionate resist exposed to (a) EUV and (b) electron beam . Figure 12 ( c) shows the sensitivity values of the resist obtained with various developers . indicates data from poor development characteristics . 'N / A' indicates that data could not be acquired due to excessive scum on the surface . Maj or advantages of the metal / metal compound Ketoacidoximate resist system include
[0066] ■ Features a novel molecular resist system with low molecular mass (<500 daltons ) , which become critical for sub-10 nm patterns .
[0067] ■ Tailorable organic environment ( in at least 15 possible ways ) around the central metal ( loid) atom yet keeping the mass close to 500 daltons
[0068] ■ Compatible with both EUV and electron beam lithographies
[0069] ■ Incorporates a universal scheme for patterning metal / metalloid-containing functional resists
[0070] ■ Possibility of incorporating metal atoms , such as aluminium that pose no risk of contamination in the semiconductor manufacturing fabs .
[0071] ■ Possibility of doping with heavy elements , such as cesium, for further improvement of the EUV or e-beam absorption to increase the sensitivity .
[0072] ■ High sensitivities to EUV and electron beam exposure
[0073] ■ Resists are sub-5 nm lithography capable and possibly angstrom-scale lithography as well using an electron beam
[0074] Figure 13 provides theoretically calculated EUV absorption cross-section of various elements . The data here provide guidelines for the choice of elements in EUV resists .
[0075] Typically, elements with higher EUV absorption cross-section are preferred . In detail , Figure 13 shows the atomic absorption cross section oaat EUV (A = 13 . 5 nm) of elements with atomic number Z from 1 to 86 .
[0076] Figure 14 shows EUVL Dose-to-Gel curves for a Zn (MIP) 2 . 2H2O Resist . In the following, EUV patterning results are presented with the Zn (MIP) 2 . 2H2O resist or the Zn (MIP) 2 (Anhydrous ) resist .
[0077] Figure 15 illustrates the EUV patterning results for Zn (MIP) 2 . 2 H2O Resist without underlayer . Figure 16 depicts the EUV patterning results for Zn(MIP)2 (Anhydrous) also without an underlayer.
[0078] Figure 17 illustrates the EUV patterning results for Zn(MIP)2 (Anhydrous) with an underlayer SHT101 while Figure 18 represents the EUV patterning results for Zn (MIP) 2 (Anhydrous) with underlayer SHT101 and and post-exposure bake at 80 °C and 60 sec.
[0079] Figure 19 shows the EUV patterning results for Zn(MIP)2 (Anhydrous) with a different underlayer PRE102 and and a postexposure bake at 90 °C and 60 sec.
[0080] Figure 20 depicts the EUV patterning results for Zn (MIP) 2.2 H2O Resist without underlayer and now with a different developer Anisole and Figure 21 shows the EUV patterning results for Zn(MIP)2 (Anhydrous) without underlayer and with the developer Anisole.
Claims
Patent claims1. The use of a metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate as a functional metal and / or metalloidcomprising ketoacidoximate as a patterning agent in EUV and electron beam lithography with applications in the field of semiconductor chip production, and direct patterning of functional materials for mask production, sensors, and photonics or catalysis.
2. The use according to claim 1, where the central metal or metalloid atom attached to the ketoacidoximate group is monovalent, divalent, trivalent, tetravalent, pentavalent or higher .
3. The use according to claim 1 or 2 wherein a composition of a divalent metal or metalloid compound comprising ketoacidoximate has one of the following structural forms:wherein :R1 and R2 stand for hydrogen (H) , organic groups, such as aliphatic Cl to CIO, aromatic, cyclic, polymerizable moieties such as acrylate, methacrylate, vinyl, epoxy, oxetane, etc., or a combination of these; andM stands for a central metal or metalloid atom with characteristics valencies as in claim 2 that is attached to the ketoacidoximate group in monodentate, bidentate, or tridentate fashion, and / or M stands for a central metal or metalloid atom being attached to other groups such as oxide, hydroxide, water, etc., or a central metal or metalloid atom being attached to a further group R3 which is a carboxylate such as acetate, a glycinate, a xanthate, an alkyl, an aryl, or polymerizable moieties such as acrylate, methacrylate, vinyl, epoxy, oxetane, etc. or a combination of these.
4. The use according to any of the preceding claims, wherein the metal is selected from a group comprising zinc, indium, aluminium, nickel, magnesium, and tin.
5. The use according to any of the preceding claims, wherein a metal content of up to 40% by weight of the total weight of the chemical composition.
6. The use according to any of the preceding claims, wherein a metal content of up to 6 atom% of the chemical composition.
7. The use according to any of the preceding claims, wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate is suitable for the production of a coating formulation by dissolving it in organic solvents and that is casted on substrates, or on underlayer coatings on substrates, and wherein the coating is capable of being patterned by irradiation directly or using a mask .
8. The use according to any of the preceding claims, wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate for forming a resist film by application of patterning agent onto a semiconductor substrate and baking the composition from about 50 °C to about 150 °C for 0.1 minutes to about 20 minutes.9 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate is patterned with or without the need of a photoinitiator or photoacid generator ( PAG) using electron beam or EUV lithography .10 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate wherein a patterning agent coated substrate is irradiated with radiation of light at a wavelength of 13 . 5 nm .11 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate wherein a patterning agent coated substrate is irradiated with electrons from 0 . 5 kV to 300 kV .12 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate whereby irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with unirradiated coating; and selectively developing the irradiated structure to remove a substantial portion of the unirradiated coating to form a patterned substrate .13 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate whereby heating the irradiated structure at a temperature from about 50 ° C to about 150 ° C for 0 . 1 minutes to about 20 minutes to form an annealed irradiated structure ; and selectively developing the annealed irradiated structure to remove a substantial portion of the unirradiated coating to form a patterned substrate .14 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate wherein the irradiated structure is insoluble in an organic base and nonirradiated coating soluble in an organic base such that the irradiated structure can be subj ected to negative tone imaging .15 . The use according to any of the preceding claims , wherein the metal and / or metalloid-comprising ketoacidoximate and / or a metal-compound-comprising ketoacidoximate is used as a resist for producing a semiconductor device comprising : a ) exposure of the resist to EUV or electrons ; b ) developing the resist film to form a resist pattern; c ) etching the resist underlayer film using the resist pattern; and d) fabricating the semiconductor substrate using the resist film thus patterned and the resist underlayer film thus patterned .