Manufacturing method and associated apparatus

Abstract

Ceramic apparatus (10) with an integrally-formed conductive ceramic portion / s (12) and an integrally-formed non-conductive ceramic portion / s (14). The apparatus (10) is a 3D apparatus that has one or more of a: chamber; a void; hollow; an internal surface; an internal conduit; an internal portion; and / or a housing. The conductive portion (12) can define an integrally-formed pathway, such as for the transmission of a signal (e.g. a power and / or a communication signal).

Description

[0001] MANUFACTURING METHOD AND ASSOCIATED APPARATUS

[0002] TECHNICAL FIELD

[0003] This disclosure concerns a manufacturing method, associated apparatus such as produced thereby; and operations or processes performed with said apparatus. In particular, but not exclusively, this disclosure concerns the manufacture of apparatus with integral portions of different properties, such as integral conductive and non- conductive portions.

[0004] BACKGROUND

[0005] Processes such as (ad)(de)sorption or batch processes currently often require a downtime or changeovertime between sequential processes or batches. For example, regeneration of sorbents or replacement of catalysts can require downtime of reactors or other apparatus for performing such or similar processes. Often different stages of processes, including downtime or regeneration, can involve temperature changes within the apparatus. Some temperature changes may be desirable, such as for regeneration, whereas other temperature changes may be less desirable such as loss of operating temperatures for safety reasons and / or due to opening or access to an interior of the process apparatus.

[0006] For example, processes, such as in bioreactors, are used for sorption processes, such as for the removal of CO2 from fluids. Heating elements can be incorporated into such reactors to transfer heat into the substances within the reactor. Sometimes the heating elements can be incorporated within an interior of the apparatus, or sometimes the heating elements are mounted on an exterior of the reactor for transferring heat through reactor walls into an internal chamber.

[0007] Such heating elements can be controllable, such as conventional electric heating elements. However, some processes incorporate non-electric heating, such as some sorption processes or distillation processes, or other chemical or industrial processing operations. Often such processes utilise convection, with flows or chambers being vertically arranged to seek efficiencies with heat transfer.

[0008] The temperatures involved in such industrial processes, can be extremely high, often in excess of 300°C or more. Where elevated temperatures, and often associated pressures, are involved, materials are selected for stability when heated. For example, particular metal alloys or ceramics are often employed to withstand the environmental conditions within industrial processing apparatus. Any devices associated with the apparatus, such as heating elements or sensors, also has to be capable of withstanding the environmental conditions. The apparatus is typically manufactured to be sealed, using pressure vessels or the like. Accordingly, any devices are typically mounted or assembled to the vessel after it has been formed.

[0009] It may be an object of one or more aspects, examples, embodiments, or claims of the present disclosure to at least mitigate or ameliorate one or more problems associated with the prior art, such as those described herein or elsewhere.

[0010] SUMMARY

[0011] According to a first aspect there is provided an apparatus. The apparatus may comprise an additive manufactured apparatus. According to a further aspect, there is provided a method of manufacturing an apparatus. The method may comprise additive manufacturing, such as 3D printing. The apparatus may comprise a reactor. Additionally, or alternatively the apparatus may comprise a heating and / or cooling apparatus. The apparatus may be configured for performing an industrial process. The apparatus may be for performing a catalytic and / or industrial process. In at least some examples, the apparatus comprises a reactor for performing a chemical reaction, such as selected from one or more of: sorption, adsorption, absorption, desorption, catalysis, exothermic reaction, endothermic reaction. The apparatus may comprise a ceramic apparatus. The apparatus may comprise an additive manufactured, such as 3D-printed, apparatus. In at least some examples, the apparatus comprises a 3D- printed ceramic reactor. The apparatus may comprise at least a portion of the reactor system as described in Applicant’s earlier International PCT patent application WO2019135678, the contents of which are incorporated by reference herein.

[0012] The apparatus may comprise an integrally-formed conductive portion / s and an integrally-formed non-conductive portion / s. The conductive portion / s may be configured for the transformation of energy to heat. The conductive portion / s may be sufficiently conductive for the transmission of electricity, such as a passage of current therethrough or therealong. The non-conductive portion / s may be sufficiently non- conductive so as to inhibit electrical passage therethrough or therealong. The non- conductive portion / s may function as an insulator / s. The non-conductive portion / s may comprise a sufficiently low conductance to act as an insulator for the conductive portion / s. The non-conductive portion / s may comprise an insulative portion / s. The apparatus may comprise an integrally-formed magnetic portion / s and an integrally-formed non-magnetic portion / s. The magnetic portion / s may comprise features similar to that of the conductive portion / s described above and elsewhere in this disclosure. The non-magnetic portion / s may comprise features similar to that of the non-conductive portion / s described above and elsewhere in this disclosure. In at least some examples, the conductive portion / s may comprise magnetic portion / s. The non-conductive portion / s may comprise non-magnetic portion / s.

[0013] The apparatus may comprise an integrally-formed pathway. The pathway may be at least one of the conductive portions. The pathway may be a transmission pathway. The pathway may comprise a transmission line. The pathway may be for the transmission of a signal. The signal may comprise a power and / or a communication signal. The signal may comprise an electrical signal. The pathway may be for transmitting / transporting energy to / from and / or within / around the apparatus. For example, the pathway may be for transmitting energy into a portion of the apparatus during at least a portion of the process. The apparatus may comprise one or more cooling elements, such as a cooling channel. The cooling element may be for the passage of a cooling fluid or coolant in or within the apparatus. The cooling element may be arranged with the pathway. For example, the cooling channel may be collinear with the pathway. Accordingly, the apparatus may comprise a conductive pathway for heating and a cooling channel for cooling. The heating and cooling may be for or of a same portion / s of the apparatus. For example, the pathway may be for transmitting energy for heating into or around a portion of the apparatus during a first phase; and the cooling element may be for cooling the portion during a second phase (or vice versa: e.g. cooling in the first phase, heating in the second phase). Additionally, or alternatively, the pathway and the cooling element may be for heating and cooling different respective portions of the apparatus.

[0014] In contrast to existing apparatuses, the present apparatus structure may be formed simultaneously with the pathway. The pathway may be formed simultaneously with the apparatus structure. Accordingly, the pathway may be entirely integrated within the apparatus. The method may comprise forming the pathway simultaneously with the adjacent apparatus structure. In at least some examples, the adjacent apparatus structure may at least partially surround the pathway / s. The adjacent apparatus structure may comprise the non-conductive portion / s. The pathway / s may be surrounded by adjacent apparatus structure along at least a portion of its length. In at least some examples, the pathway / s may be encapsulated within the surrounding adjacent apparatus structure. The pathway / s may be in contact with the adjacent apparatus structure, such as direct contact. The pathway may be completed upon formation of the apparatus by additive manufacturing. The pathway may be complete upon formation of the adjacent apparatus structure, together with the adjacent apparatus structure.

[0015] The first and second materials may be sequentially, such as consecutively formed. Accordingly, the first and second portions (e.g. adjacent apparatus structure and pathway / s) may be formed sequentially. For example, the method may comprise forming at least a portion of the apparatus structure initially. Then the at least a portion may be processed, such as fired, sintered, hardened or the like. The method may comprise providing the first material as a substrate. The method may comprise subsequently applying the second material to the first material. The method may comprise post-forming processing of the second material, such as firing, sintering, hardening or the like. The post-forming processing of the second material may be different from that of the first material prior to the application of the second material. For example, the first material may be sintered under different from conditions from the sintering of the combination of first and second materials after the second material has been applied to the sintered first material. The first and second materials may be sequentially applied in a plurality of iterative steps, optionally with a post-forming processing in between. Accordingly, the method may comprise assembling individual parts into an overall structure, such that geometrically highly complex overall structures are achieved.

[0016] The method may comprise forming the pathway simultaneously with the apparatus structure. In at least some examples, the method comprises additive manufacturing the pathway contemporaneously with the adjacent or surrounding apparatus (portion / s). The method may comprise formation by additive manufacturing, such as with the material for the pathway being supplied contemporaneously with the material for the apparatus structure. The method may comprise forming the pathway relative to the adjacent apparatus structure by varying a property of the material supplied during additive manufacturing. In at least some examples, the method comprises the additive manufacture using a plurality of constituents. The method may comprise varying the constituents during additive manufacture, such as varying a relative ratio of the constituents to provide differentiation between the pathway and the adjacent apparatus structure. The pathway may comprise a solid-state pathway. The pathway may be integrally- formed with the immediately adjacent (e.g. surrounding) portion / s of apparatus. The pathway may be simultaneously formed with the immediately adjacent (e.g. surrounding) portion / s of apparatus. In particular, the material of the pathway may be contemporaneously additively formed in the apparatus with the immediately adjacent (e.g. surrounding) portion / s of apparatus. The pathway may be comprised of a compatible material to the immediately adjacent (e.g. surrounding) portion / s of apparatus.

[0017] The pathway may be solid. The pathway may be massive. The pathway may be continuous. The pathway may be non-hollow. The pathway may be solid-state at ambient temperature, such as around 20C. Optionally, the pathway may be solid-state at operating temperature. The operating temperature may be the ambient temperature. Additionally, or alternatively, the operating temperature may comprise an elevated temperature, such as 50°C or more; 80°C or more; or more than 100°C. In at least some examples, the pathway is solid-state at temperatures in excess of 300°C; including up to 600°C or 800°C or above. The pathway may be solid-state over a similar temperature range to the apparatus, such as the apparatus structure adjacent or housing the pathway. The pathway may be solid state for the entire operating parameter window of the apparatus, including all possible temperatures and pressures. The pathway may be solid at temperatures of 0°C and below. The pathway may be configured to raise the temperature of the apparatus. For example, the pathway may be configured to heat the apparatus, such as when an electrical current in supplied to the pathway. The pathway may be configured to heat the apparatus to operating temperature / s.

[0018] The pathway may be comprised of a similar material / s to the adjacent apparatus structure. The apparatus may be comprised of a first material. The apparatus structure may be comprised of the first material. The apparatus structure may comprise a housing. The pathway may be comprised of a second material. The second material may be different from the first material. The second material may share one or more material properties with the first material.

[0019] In at least some examples, the pathway comprises a mixture of constituent materials. The mixture may comprise at least similar constituent materials as the immediately adjacent (e.g. surrounding) portion / s of apparatus. The ratios of the constituent materials in the pathway may be different to the ratios of the constituent materials in the immediately adjacent (e.g. surrounding) portion / s of apparatus. The constituent materials may comprise two components. The constituent materials may comprise three components, three or more components. The first and second materials may be comprised of the same constituent materials. In at least some examples, one of the first and second materials may comprise an additional component, relative to the other of the first and second materials.

[0020] The pathway may comprise at least some same or similar characteristics to the immediately adjacent (e.g. surrounding) portion / s of apparatus. For example, the pathway and the immediately adjacent (e.g. surrounding) portion / s of apparatus may comprise a similar, comparable or at least compatible, thermal property, such as a coefficient of thermal expansion (CTE). The pathway may comprise a same or a similar chemical property to the immediately adjacent (e.g. surrounding) portion / s of apparatus. The pathway may comprise a similar bond to the immediately adjacent (e.g. surrounding) portion / s of apparatus as within the pathway and / or within the immediately adjacent (e.g. surrounding) portion / s of apparatus.

[0021] The material of the apparatus may comprise a ceramic material, such an oxide and / or non-oxide ceramic. The oxide may comprise a metal oxide. For example, the apparatus may be formed from at least one metal oxide, such as alumina having oxides of at least one of zirconium, barium, lanthanum, magnesium and cerium. The first material may comprise ceramic. Optionally, the second material may comprise a ceramic. The first and second materials may comprise similar ceramics. The first and second materials may comprise additional component materials. The additional component materials may be similar in the first and second materials. The ratios of the ceramic and / or component material / s in the first material may be different from the ratios of the ceramic and / or component material / s in the second material.

[0022] The first and / or second materials may comprise three-phase non-oxide ceramic composites. At least one of the composite constituents may comprise Si3N4. At least one of the composite constituents may comprise SiC. At least one of the composite constituents may comprise at least one of Nb, Mo, W, Zr. In at least some examples, the first and / or second materials may comprise non-oxide ceramic composites comprising of, or consisting of, SisN4, SiC & MoSi2. The three-phase mixture of SisN4, SiC & MoSi2 may enable a variation in electrical resistivity by variation of the ratios of the respective constituent components. The range of electrical resistivity may be selectively variable between 10'3Qcm and 1012Qcm. The method may comprise varying the ratios of constituent composite components to achieve a desired resistivity. The electrical resistivity of the first material may comprise a resistivity in the range of 108Qcm to 1018Qcm. In at least some examples, the electrical resistivity of the first material may comprise a resistivity in the range of 109Qcm to 1015Qcm. In at least some examples, the electrical resistivity of the first material may comprise a resistivity in the range of 1O10Qcm to 1013Qcm. In at least some examples, the electrical resistivity of the first material may comprise a resistivity in the range of 1O10Qcm to 1012Qcm; optionally in the range of 1011Qcm to 1012Qcm; 1012Qcm to 1013Qcm. The electrical resistivity of the second material may comprise a resistivity in the range of 10'8Qcm to 10'2Qcm. In at least some examples, the electrical resistivity of the second material may comprise a resistivity in the range of 10'8Qcm to 10'3Qcm. In at least some examples, the electrical resistivity of the second material may comprise a resistivity in the range of 10'6Qcm to 10'2Qcm. In at least some examples, the electrical resistivity of the second material may comprise a resistivity in the range of 10'4Qcm to 10'2Qcm; optionally in the range of 10'3Qcm to 10'1Qcm; 10'3Qcm to 10’2Qcm. It will be appreciated that the resisitivity of each of the first and second materials may be tailored by adjusting the respective ratios of constituents to predetermined ratios.

[0023] The method may comprise post-formation processing. For example, the method may comprise firing, sintering or hardening the formed first and / or second materials. The method may comprise sintering, such as of the entire apparatus. For example, subsequent to formation (e.g. by 3D printing), the apparatus may be exposed to elevated temperature (e.g. in excess of 1000°C) for a period of time (e.g. 12-24 hours). The method may comprise preparing the first material for supply from a nozzle. For example, the method may comprise mixing a correct proportion / s of constituents, optionally with a binder, to provide respective mixtures for the first and second materials.

[0024] The composites of the first and / or second materials may be co-sintered. For example, the first and second materials may be sintered together, simultaneously, following contemporaneous deposition by additive manufacturing. The first and / or second materials may be co-sintered. The first and second materials may be co-sintered. The first and / or second materials may be co-sintered. to provide excellent thermal, electrical and / or mechanical properties. The first and / or second materials may be co-sintered to provide apparatus portions that are stable at elevated temperatures, such as in excess of 800°C, more than 1000°C; and even up to 1450°C (e.g. in air). The first and / or second materials may be suitable for use in corrosive atmospheres (e.g. acidic liquids, hot steam, oxygen). The first and / or second materials may be configured for Hazardous Areas. The first and / or second materials may have low specific weight.

[0025] The apparatus may comprise, or consist, of three-phase composite non-oxide ceramics. In at least some examples, the apparatus is formed from Si3N4-MoSi2-SiC. The first material may comprise Si3N4-MoSi2-SiC in a first ratio; and the second material may comprise Si3N4-MoSi2-SiC in a second ratio. The second ratio may provide a greater electrical conductivity (e.g. after sintering) than the first ratio. The first ratio may provide an electrical insulator (e.g. after sintering). The second ratio may provide an electrical conductor (e.g. after sintering). The first material may comprise a lower ratio of a conductive phase (e.g. the proportion of the conductive phases, such as MoSi2 / SiC) than the second material. The first material may comprise 50wt.-% or more of SisN4. The electrically conductive mixture of Si3N4-MoSi2-SiC may comprise an SisN4 amount of 25wt.-% or less. The insulating mixture may comprise an SisN4 amount of 50wt.-% or more. For example, the first material may comprise 60% wt SisN4 and 40% wt SiC / MoSi2. The second material may comprise 25% wt Sisl^ and 75% wt SiC / MoSi2. In at least some examples, the mixture of Si3N4-MoSi2-SiC additionally comprises a binder.

[0026] The first material may comprise an electrical resistivity of about 1012Qcm. The second material may comprise an electrical resistivity of about 10'3Qcm. The second material may comprise a greater conductivity than the first material. The second material may comprise a conductivity of about 104Ohm'1cm'1.

[0027] The first and / or second material may comprise a filament / s. The filament / s may be dispersed or distributed through the second material. In at least some examples, the filaments are only present in the second material and not in the first material. In alternative embodiments, the filaments are present in both the first and second materials. The filaments may be present in a higher concentration in the second material relative to the first material. The filaments may comprise conductive filaments, such as electrical and / or thermally conductive filaments. The filaments may comprise carbon filaments, or carbon-based filaments. The filaments may comprise cellulose and / or cellulose-like filaments. The filament / s may comprise graphitised carbon or graphene. The filament / s may comprise graphitised carbon or graphene after sintering, such as following sintering of cellulose and / or cellulose-like filaments. Additionally, or alternatively, the filament / s may comprise copper or copper-based filaments. In at least some examples, the second material comprises filaments distributed in a ceramic. The filaments may be additive manufactured, such as deposited (e.g. 3D printed) from a nozzle (e.g. whereby filaments are present in mixture supplied to and from nozzle). The filaments may be premixed with other substance / s for deposition from a same nozzle. For example, the filaments may be present in a ceramic prior to supply to a deposition nozzle.

[0028] In at least some examples the first / second material / s comprise at least one of ZrC>2 or AI2O3. The first and / or second material / s may comprise carbon nanofibers (CNF). The first and second materials may be comprised of AhCh / ZrCh + CNF. In at least some examples, there may be provided a ceramic matrix nanocomposite (CMC) material consisting of zirconia (or alumina) matrix with a homogeneous percolating 3D network of a few-layered-graphene (FLG) like sheets. The method may comprise a postformation processing to provide the FLG. The method may comprise the formation of the first and / or second materials by additive manufacturing, using a mixture of ceramic / s and natural cellulose nanofibers (CNF). The method may comprise postprocessing, such as spark plasma sintering (SPS), to transform the CNF to FLG.

[0029] In at least some examples, the second material comprises a metallic material. The second material may comprise a conductive metal (thermal and / or electrical). For example, the second material may comprise copper. The second material may comprise an alloy, such as a bronze alloy. The second material may comprise tin. In at least some examples, the second material comprises an additive manufactured conductive pathway.

[0030] The method may comprise additive forming using supply of at least two material constituents. The method may comprise additive forming by contemporaneous supply of the first material from a first nozzle and of the second material from a second nozzle. The first and second nozzles may be comprised in a same (multi-nozzle) printhead. The nozzles may be operated simultaneously and / or sequentially. The method may comprise additive forming using supply of at least two material constituents from a formation or deposition head. The method may comprise additive forming using a multi-nozzle 3D printing system. The method may comprise forming the apparatus structure contemporaneously with the integral pathway / s using a multi-nozzle 3D printing head. The multi-nozzle 3D printing head may comprise at least two nozzles. Each nozzle may be for supply of a respective material constituent. The method may comprise supplying material simultaneously from each nozzle such that each material constituent is contemporaneously supplied to provide the apparatus material as a mixture of the constituent materials. In contrast, to methods whereby supply from each nozzle is alternated, the method here may comprise simultaneous supply of at least two material constituents. Likewise, in contrast to methods employing two nozzles whereby one nozzle may be for supplying a (temporary) support material for the actual final component material, the present method comprises suppling material constituents from at least two nozzles whereby each constituent material forms part of the finalised apparatus. For example, none of the materials supplied comprises a temporary material, such as for removal in a post-formation process (e.g. similar to lost-wax type removal processes).

[0031] In at least some examples, the method comprises additive manufacture of the first and second materials by deposition of the constituent materials from the multi-nozzles by varying the relative amounts of constituent material deposited from each respective nozzle. For example, where both the first and second materials are composed, or composed essentially, of SiaN4, MoSi2 and SiC, the differing properties of the first and second materials may be achieved by varying the respective amounts of at least one of SisN4, MoSi2 or SiC. There may be three nozzles provided, one for each of SiaN4, MoSi2 and SiC: a first nozzle supplying a desired amount of SiaN4, a second nozzle supplying a desired amount of MoSi2, and a third nozzle supplying a desired amount of SiC. The supply from each nozzle may be controlled during formation to determine the deposition of the first or second material as appropriate. Alternatively, the mixtures of SisN4, MoSi2 and SiC for forming each of the first and the second materials may be premixed, each respective mixture being supplied to the respective nozzle (e.g. first mixture with first ratio to first nozzle and second mixture with second ratio to second nozzle).

[0032] In at least some examples, the apparatus may undergo a post-formation process. For example, after formation the apparatus may be subjected to a treatment process, such as a heat-treatment, firing, curing, sintering, or the like. The post-formation may comprise a manufacturing step prior to use of the apparatus. The method may comprise post-formation processing of the pathway and / or adjacent apparatus structure.

[0033] The provision of the first or second material may be effectively digital. For example, the formation may be of either the first or second material. Accordingly, there may be a distinct transition between the first and second materials. There may be a boundary between the first and second materials. The boundary may comprise a sharp boundary. Alternatively, there may be provided a gradual transition, such as by a gradual variation in the provided ratio from the first ratio to the second ratio (or vice versa). Accordingly, there may be a gradual transition between the first and second materials. There may effectively be no boundary; or at least no sharp boundary.

[0034] The pathway may comprise a conductive material. The pathway may comprise an electrically conductive material. The pathway may comprise an electrical pathway. The pathway may comprise an electrical pathway for the transmission of an electrical signal. The electrical signal may comprise an electrical communication signal, such as a control or a feedback signal.

[0035] The conductor may be for transmitting an electrical current. The electrical signal may be AC. Alternatively, the electrical signal may be DC. The pathway may be connected or connectable to a power supply. The power supply may be external to the apparatus. Alternatively, the power supply may be within the apparatus. The power supply may be an electric power supply, such as mains or battery supply.

[0036] The electrical transmission may be for power. The electrical signal may comprise a power signal.

[0037] In at least some examples, the pathway may comprise a semiconductive pathway.

[0038] The conductive material may be for varying a thermal property of the apparatus. The electrical transmission may be for temperature variation, such as heating. The electrical transmission may be for temperature control. The transmission may comprise a direct thermal transmission, such as via conduction along the transmission line. Additionally or alternatively, the transmission may comprise an indirect thermal transmission, such as whereby heat is induced by / from an electrical signal transmitted through / along the transmission line.

[0039] The pathway may be configured for heating. The pathway may be configured to controllably heat the apparatus. The pathway may be configured to heat selected or selectable portion / s of the apparatus. The pathway / s may be configured to vary the temperature in the apparatus. The pathway / s may be configured to vary the heat in the apparatus, such as by providing different heating in different portions of the apparatus. The heating may be for or associated with a phase change, such as melting / liquefying and / or boiling or vaporising. In at least some examples, the heating may be for gluing or soldering / welding or otherwise bonding or fusing (e.g. elements or components together). In at least some examples, the heating may be for hardening and / or drying.

[0040] The pathway / s may be configured for cooling. The pathway may be configured to controllably cool the apparatus. The pathway may be configured to cool selected or selectable portion / s of the apparatus. The pathway / s may be configured to vary the temperature in the apparatus.

[0041] The pathway may comprise an electrical resistor. The pathway may be configured to generate, radiate or emit heat in response to receipt of or passage therethrough of the electrical signal.

[0042] The electrical transmission may be for the induction of heat. The electrical pathway may be for conversion of received energy into thermal energy. For example, the electrical pathway may comprise an inductive element. The apparatus may be configured to be heated by induction, such as via an induction coil. The induction coil may be external to the apparatus. In alternative embodiments, the induction coil may be internal to the apparatus.

[0043] The pathway / s may be continuous. For example, the pathway may define a continuous link from a start end to a terminal end. In at least some examples, the pathway may comprise a discontinuous pathway. The apparatus may comprise one or more internal portions of transmissive material, such as defined by the second material. The transmissive material may comprise conductive material. The internal portion / s may be unconnected. The internal portion / s may be for the provision of inducing heat in the apparatus. For example, the internal portion / s may be receptive to electromagnetic energy for conversion, such as to induce heat in the apparatus. The internal portion / s may be non-linear. The internal portion / s may comprise a pocket / s of the second material, contemporaneously formed by additive manufacturing integrally with the surrounding apparatus structure.

[0044] The apparatus may comprise respective portions of the first and second materials according to an optimum distribution, such as defined, established and / or verified by modelling and / or simulation. For example, the apparatus may comprise a distribution of a conductive or magnetic portion / s for heating at locations within or throughout the apparatus where heating is desired or most desired. The apparatus may be configured to provide a distributed energy supply, such as for heating. The apparatus may be configured to provide an adaptive energy supply, such as adapting throughout the course of an operation or procedure performed by, in or with the apparatus. The supply may be controllable. The proliferation of the respective portion / s in, through or throughout the apparatus may enable a targeted and / or controllable energy supply.

[0045] The apparatus may comprise a plurality of pathways of similar type. For example, the apparatus may comprise a plurality of electrical pathways for transmitting multiple electrical signals. The electrical signals may be of a similar type or for a similar purpose, such as for transmitting a plurality of feedback signals from a plurality of devices, such as sensors, positioned at a plurality of locations within or throughout the apparatus. In at least some examples, the apparatus comprises one or more sensors for monitoring a property / ies within the apparatus (e.g. temperature / s and / or pressure / s) and one or more controllable elements (e.g. heating elements) for controlling or at least influencing the property / ies in response to the monitoring.

[0046] Additionally, or alternatively, the apparatus may comprise a plurality of pathways of different types. For example, the apparatus may comprise a first electrical pathway for the transmission of a feedback or control signal and a second electrical pathway for the transmission of power.

[0047] Integrally forming the pathway with the adjacent apparatus structure may provide an inherent seal between the pathway and the adjacent apparatus structure. Integrally forming the pathway with the adjacent apparatus structure may reduce a possibility of migration or leakage in the direction of the pathway, such as along the pathway as such or any channel otherwise associable with a pathway (e.g. annuli, microannuli, etc. otherwise present if the pathway was not so integrally formed as herein described).

[0048] Integrally forming the pathway with the adjacent apparatus structure may at least reduce or even eliminate boundary effects between the pathway and the adjacent apparatus structure. In examples whereby the first and second materials share common attributes, such as being formed from at least some constituents common to both materials, the CTE may be sufficiently similar so as to minimise possible effects associated with temperature change, particularly rapid temperature change. The pathway may comprise a longitudinal pathway. The pathway may comprise a longitudinal pathway extending along a central longitudinal axis. The pathway may comprise a linear pathway, or at least one or more linear portion / s. Additionally or alternatively, the pathway may comprise one or more curved portions. The pathway may comprise one or more helical portion / s. The pathway may comprise one or more loop / s. The pathway may define a circuit, such as with a start end and a finish end. The start end may be external to the apparatus, such as on an external surface. The finish end may be external to the apparatus, such as on an external surface. Accordingly, the start and finish ends may both be connected to further apparatus (e.g. for supply of electricity). Alternatively, at least one of the start and finish ends may be internally located within the apparatus. For example, the pathway may have a terminal end within the apparatus. The terminal end may be surrounded by the adjacent apparatus structure. For example, the terminal end may be entirely enclosed or encapsulated. Alternatively, the terminal end may be unenclosed by the adjacent apparatus structure. For example, the terminal end may be exposed within an internal or interior portion of the apparatus, such as at, on or from an internal surface of the apparatus. The terminal end may be exposed at or protrude or extend from the internal surface, such as into an internal conduit, chamber or void within the apparatus. The internal conduit, chamber or void may be hollow. The internal conduit, chamber or void may be at least partially filled. In at least some examples, the internal conduit, chamber or void is / are defined by the integrally-formed ceramic conductive portion / s and the integrally-formed ceramic non-conductive portion / s. The internal conduit, chamber or void may be at least partially filled with another material, such as a non-ceramic.

[0049] The pathways may comprise parallel pathways. Additionally, or alternatively, the pathways may comprise series / sequential pathways. The pathways may comprise branch pathways. The pathways may comprise a branch / es. The pathway may comprise a loop / s.

[0050] The pathway / s may comprise a cross-sectional profile. The cross-sectional profile may remain constant along at least a portion / s of the longitudinal length / s of the pathway / s. Additionally, or alternatively, the cross-sectional profile may vary along the longitudinal length / s of the pathway / s. For example, the cross-sectional profile may vary in area and / or shape along the length of the pathway / s. The cross-sectional profile may vary along the length to vary an associated characteristic of the pathway. For example, the resistivity or conductivity of the pathway may vary with cross-sectional profile area and / or shape. Accordingly, the conductance of the pathway may be varied along its length. The cross-sectional profile may be varied to provide increased conductance or resistance at desired section / s of the pathway. For example, heat transferred or dissipated from the pathway (e.g. associated with the pathway functioning as an electrical resistor and / or heating element) may be increased at desired section / s by variation of the cross-sectional profile. The cross-sectional profile may be formed, optionally varied, as part of the additive manufacturing process. The cross-sectional profile may comprise a circular shape along at least a portion / s of the pathway. Additionally, or alternatively, the cross-sectional profile may comprise a polygonal shape, such as rectangular, along at least a portion / s of the pathway. The cross- sectional profile may be relatively flat along at least a portion / s of the pathway. For example, the pathway may comprise a greater x dimension than a y dimension, the x and y dimensions being perpendicular to each other, and to the longitudinal axis of the pathway (z dimension). The relatively flat portion may provide an increased transmissibility associated with the pathway, such as for increased heating in a preferred direction / s relative to the pathway.

[0051] The pathway may be embedded within the apparatus structure. The second material may be enclosed by the first material, at least when viewed in one or more crosssections. The second material may be embedded in the first material such that the second material is spaced or distanced from a surface of the first material, such as a wall surface of the first material. The second material may be separated by a thickness of the first material from a wall or surface of the apparatus. For example, the second material may be embedded within the first material, with the first material defining at least one wall such that the second material is separated from the at least one wall by a thickness of the first material. The thickness may comprise at least 1 pm; and in some examples at least 10pm or at least 100pm. The thickness of the first material may separate the second material from an internal and / or external wall of the apparatus. The separation may prevent direct contact between the pathway / second material and an internal portion of the apparatus, along at least a portion of the pathway / second material. Accordingly, the pathway / second material may be separated from a substance, such as a fluid, within the apparatus. The apparatus may be configured such that energy, such as heat, is indirectly transferred or transmitted. For example, the internal portion of the apparatus (which may comprise a chamber, conduit and / or fluid) may be heated by heat transferred or generated in or by the pathway / second material, said heat being transferred through the thickness of first material separating the pathway / second material from the internal portion. In at least some examples, the pathway / second material may be in direct contact with an internal portion / s of the apparatus, along at least a portion of the pathway / second material. For example, the pathway / second material may be embedded within the first material an initial length of the pathway / second material, such that the pathway / second material is entirely enclosed by the first material, isolated from direct contact with the interior of the apparatus along that first portion. In at least some examples, the pathway / second material may be in direct contact with the interior of the apparatus (e.g. where there is no thickness of first material separating the pathway / second material). Accordingly, the pathway / second material may be brought into direct contact with an interior portion of the apparatus along the second portion of its length, such as to directly contact a substance (or device) in the interior of the apparatus. The pathway / second material may be used to directly transfer energy (e.g. heat) to the internal portion of the apparatus, at least along a portion of the pathway / second material.

[0052] The pathway may be located internally within an internal wall of the apparatus. The pathway may be enclosed by adjacent portion / s of the apparatus, such as wall or housing portions of the apparatus. Additionally or alternatively, the pathway may be located on a wall of the apparatus, such as on or upon a surface or wall (e.g. internal) of the apparatus.

[0053] The apparatus may be configured to improve a process speed. The apparatus may be configured to increase a process speed, such as relative to a comparable process without the integral pathway. The apparatus may be configured to improve a speed of one or more of: (ad / ab / de)sorption; reaction / s; mechanical processing; chemical processing. The process speed may be improved by providing a targeted and / or controlled heating. The heating may be more targeted and / or controllable than previously possible, such as previously without such integral portion / s as defined herein.

[0054] In at least some examples, the pathway may be connected, or at least configured to be connected to, a device / s. The electrical transmission pathway may be for connection to a device. The device may comprise a powered or powering device. The device may comprise an end device. The device may be positioned at an end portion (e.g. terminal end) of the pathway. Additionally, or alternatively, the device may be positioned at an intermediate portion of the pathway. The device / s may be located at a portion of the pathway where the pathway is exposed, such as internally exposed within the apparatus. Additionally, or alternatively, the device may be located within an unexposed portion of the apparatus, such as embedded or surrounded by material of the apparatus (e.g. additively-formed around the device).

[0055] The device may provide an output. The device may comprise a device for providing an input to the pathway / s. The output from the device may be transmitted via the pathway / s. In at least some examples, the output from the device may be transmitted from the device via the pathway / s through the apparatus, such as from an internal portion of the apparatus to an external portion of the apparatus. The device may comprise one or more sensor / s, such as a temperature or pressure sensor / s. The sensor / s may be for measuring or monitoring one or more of: flow rate, viscosity, conductivity, density. The device may comprise a powered device, such as powered via the pathway / s. The device may comprise a passive device. For example, the device may comprise an unpowered device. The device may comprise a thermocouple. The device may be located internally within the apparatus. For example, the device may be located within a chamber or conduit of the apparatus. The device may be enclosed within the apparatus.

[0056] The device may be powered and / or controlled via a signal / s transmitted via the pathway / s. The device may convert a power signal received from the pathway / s. The device may convert the power signal to one or more of: a mechanical output; a thermal output; an electromagnetic output. The device may comprise a rotary device, such as a motor. In at least some examples, the device comprises a pump; valve; or stirrer.

[0057] Example apparatuses comprise a plurality of devices. In at least some examples, a plurality of devices is distributed in / through the apparatus. The devices may be of a similar type, such as a plurality of sensors distributed in / through the apparatus. The plurality of sensors may provide information on a property (e.g. pressure and / or temperature and / or flow rate) in different portions of the apparatus. Accordingly, information on a property distributed in / through the apparatus may be obtained. Additionally, or alternatively, the apparatus may comprise a plurality of devices of different types. For examples, the apparatus may comprise a heat sensor / s and also a heating device (e.g. an electrical heating element as a device).

[0058] The device may be assembled to the additively formed apparatus. In at least some examples, the device may be fitted to the apparatus after the additive manufacture of the apparatus including the pathway. For example, the method may comprise additively manufacturing the apparatus with the integrally-formed pathway to provide a chamber, surface or opening to or in which the device can be connected. The method may comprise connecting the device to the pathway. The method may comprise mechanically and / or electrically connecting the device to the pathway. The method may comprise connecting the device to the pathway in a post-additive manufacturing step (e.g. a step subsequent to the additive manufacturing of the apparatus with pathway). The method may comprise connecting the device to the pathway in a step subsequent to a post-formation process (e.g. after the additive-manufactured apparatus has been sintered or the like).

[0059] The apparatus may comprise a conduit and / or chamber for processing. For example, the apparatus may be for processing one or more substances. The device / s may be mounted in or adjacent the chamber or conduit. Alternatively, in at least some examples, the device / s may be mounted within the apparatus structure, such as within a wall of a housing. The device / s may be embedded within the apparatus structure.

[0060] In at least some examples, there is provided a controllable reactor with integrally- formed electrically-conductive elements for controlling the reactor temperature. The reactor may be configured to change temperature, such as rapidly change temperature.

[0061] The apparatus may be configured to control a rate of a process. The apparatus may be configured to adaptively control a rate of a process. The apparatus may be configured to improve the rate of a process. The apparatus may be configured to increase the rate of a process. The apparatus may be configured to decrease the rate of a process. The apparatus may be configured to increase a rate of (ad)sorption, such as of CO2 (ad)sorption.

[0062] The pathway may be for supplying an electrical current for electrolysis. At least one pathway may comprise or be connected to an electrode. In at least some examples, the electrode is a terminal portion of the pathway, formed as an integral portion of the pathway. In other examples, the electrode is connected to the pathway. For example, the pathway may terminate at a surface, such as of an internal chamber, with the electrode connected to the termination of the pathway.

[0063] The pathway may comprise an optical pathway. The pathway may comprise an optical line for transmission of an optical signal, such as an optical communication and / or power signal. The pathway may comprise a lined pathway. The lining may comprise the second material. In other examples, the adjacent apparatus structure may comprise the first material, the pathway may comprise the second material and the lining or liner between the pathway and the adjacent apparatus structure may comprise a third material.

[0064] In at least some examples, there may be a boundary between the pathway and the adjacent apparatus structure.

[0065] In at least some examples, the pathway may comprise a pathway for transmission or transportation of material. For example, the pathway may comprise a hollow portion, such as a lumen, conduit, passageway or the like. The material to be transmitted or transported may comprise one or more of: a fluid; a liquid; a gas; a solid (e.g. in particulate form; and / or conveyed in a carrier fluid). The hollow portion may be comprised with the solid-state pathway. For example, the pathway may comprise a solid-state pathway for transmission (e.g. of an electrical signal) and a collinear portion for the transmission or transportation of a material. The collinear portion may comprise a hollow portion. In at least some examples, the pathway may comprise a lumen of the pathway material, such as the second material. Accordingly, the pathway may effectively comprise a lined pathway.

[0066] According to a further aspect, there is provided a method of performing a process. The method may comprise a chemical process, such as involving a chemical reaction / s. The process may comprise a (ad / de / ab)sorption process. Additionally, or alternatively, the process may comprise a catalytic process. Additionally or alternatively, the process may comprise a thermal process. The process may comprise performing at least a portion of the process in an apparatus as described herein, such as with an integrated heating or conductive pathway / s or element / s. The apparatus of any other aspect, example, embodiment or claim may be for performing the process. The apparatus of any other aspect, example, embodiment or claim may be configured for performing the process.

[0067] The method may comprise temperature control. The method may comprise targeted temperature control. The method may comprise controlling different portions of the apparatus to locally control the temperature within those portions of the apparatus. The method may comprise heating. The method may comprise a rapid heating. For example, the method may comprise heating from a temperature of 20°C to 400°C in 10 seconds. The process may comprise one or more of a (ad / ab / de)sorption process. For example, the process may comprise a carbon capture process. The method may comprise capturing CO2, such as from air or any CCh-rich process stream. The method may comprise directing a CCh-containing fluid through the apparatus. For example, the apparatus may comprise a column. The column may comprise (e.g. effectively filled with) a material, such as a solvent. The solvent may comprise one or more liquid alkalines or amines (e.g. monoethanolamine, MEA). In a first column, the CO2 molecules may be chemically absorbed in the solvent. The treated gas may leave the column, the treated gas containing much less CO2. In a second column, the solvent may be regenerated with hot steam, detaching the CO2 from the solvent. The method may comprise an alkaline or amine scrubbing process. The method may comprise a wet scrubbing process. Alternatively, the method may comprise a dry scrubbing process. The method may comprise a direct air capture.

[0068] The method may comprise directing a CO2 .containing fluid (e.g. a gas or air) through a solid (ad)sorbent. The (ad)sorbent may comprise a solid (ad)sorbent. The (ad)sorbent may comprise a supported amine-functionalized sorbent or metallic organic framework, MOF). The apparatus may comprise monolithic structure, where the CO2 is adsorbed from the fluid (e.g. gas stream or air). In a next process step, steam or other sweep gas may be used to collect the CO2 and regenerate the adsorbent. The (ad)sorbent may be comprised in the apparatus as described herein, such as in any aspect, example, claim or embodiment. The (ad)sorbent may be located in the apparatus. The apparatus may comprise one or more chambers and / or channels for receipt of the (ad)sorbent. The (ad)sorbent may be added to the apparatus following formation of the apparatus (e.g. by pumping, pouring or placing in the apparatus). The (ad)sorbent may be added to the apparatus following additive manufacturing (and optionally after sintering where appropriate).

[0069] The method may comprise optimisation of the locations and amounts of heatable material. The method may comprise very fast volumetric heating of the (ad)sorbent. The method may comprise an optimal temperature profile over the apparatus, such as in vertical and / or radial directions. The method may comprise avoiding the use of steam. The method may comprise a non-steam regeneration of (ad)sorbent. The method may comprise a spatial heating control. The spatial heating control may provide an optimal regeneration condition over the height and / or diameter of the reactor. The method may comprise increasing the heating rate at the outer part / s of the sorbent (e.g. close to the reactor wall). The method may comprise counteracting heat losses. The method may comprise providing a (more) uniform temperature profile (e.g. lateral temperature profile).

[0070] The method may comprise temperature control. The apparatus may comprise a plurality of sensors and / or heating element / s distributed within or throughout the apparatus such that temperatures within different portion / s of the apparatus can be controlled and optionally varied. The temperature / s may be controlled automatically. The temperature / s may be controlled in response to a signal or feedback from the sensor / s. The temperature may be controlled over a period of time, such as during or throughout (ad)sorption and / or regeneration of (ad)sorbent. For example, the apparatus may comprise integrated temperature sensors (e.g. thermocouples). The temperature sensors may enable accurate and localized process control (at least compared to previous bed reactors). The temperature sensors may enable temporal heating control, such as to allow adjustment of the local heating rate / s based on a position of the heating fronts (e.g. in order to minimize the overall heating duty cycle and thus optimize overall energy efficiency). The method may comprise optimisation of a trade-off between electrical heating and convective heating. The method may comprise heating specifically the first part of the (ad)sorbent bed, while the second part is heated by the fluid itself flowing through the apparatus. The method may comprise localised heating, such as directly from the pathway / s (e.g. functioning as electrical heating elements as such) and / or via device / s connected to the pathway / s.

[0071] The process may comprise a distillation process. The apparatus may comprise a plurality of sensors and / or heating element / s. The apparatus may comprise a plurality of sensors and / or heating element / s distributed within or throughout the apparatus such that temperatures within different portion / s of the apparatus can be controlled and optionally varied. The temperature / s may be controlled automatically. The temperature / s may be controlled in response to a signal or feedback from the sensor / s. The temperature may be controlled over a period of time, such as during or throughout a distillation process. The distillation process may be continuous or batch. Additionally, or alternatively, the apparatus may comprise one or more fluid control devices, such as one or more valves or pumps.

[0072] According to a further aspect, there is provided a method of manufacturing the apparatus for the process / es described herein. The apparatus may comprise an industrial processing apparatus. For example, the apparatus may comprise a chemical processing apparatus. The apparatus may comprise a reactor. The method may comprise the additive manufacture of the apparatus. The method may comprise manufacturing the reactor with an integrated transmission line. The method may comprise manufacturing the reactor with an integrated transmission line. The method may comprise manufacturing the reactor with an integrated conductor. The conductor may comprise an electrical and / or thermal conductor. The method may comprise assembling a plurality of parts. The method may comprise assembling a plurality of additively-manufactured parts. The additively-manufactured parts may each comprise an integral pathway / s. The method may comprise assembling the plurality of parts such that the pathway / s of a first part aligns and / or connects with a pathway of a second part. The method may comprise connecting a pathway of a first part to a pathway of a second part. The method may comprise assembling the plurality of parts such that a signal can be passed from the first module to the second module, along the respective pathways. Additionally, or alternatively, the pathway / s of a / each part may be independently connected, such as via a face or surface of the part non- adjacent another part of the assembly. The parts may each comprise a module, such that the assembly may be a modular assembly composed of the plurality of parts. The method may comprise connecting a plurality of additively-manufactured modules. The modules may comprise stackable modules.

[0073] The plurality of additively-manufactured parts may comprise at least two housing portions of the apparatus. For example, the method may comprise assembling two portions or halves of housing to form a complete apparatus housing. The method may comprise enclosing the apparatus by assembling the housing portions (e.g. by effectively placing a lid on a base).

[0074] According to an aspect, there is provided a method of using the apparatus according to an aspect, claim, embodiment or example of this disclosure.

[0075] The steps of the method may be in any order.

[0076] According to an aspect of, there is provided a system configured to perform a method according to an aspect, claim, embodiment or example of this disclosure.

[0077] According to an aspect, there is provided a controller arranged to perform a method according to an aspect, claim, embodiment or example of this disclosure. For example, there may be provided a controller configured to perform the method of manufacture of any aspect, claim, embodiment or example of this disclosure.

[0078] According to an aspect, there is provided a system comprising a controller according to an aspect, claim, embodiment or example of this disclosure, or a system arranged to perform a method according to an aspect, claim, embodiment or example of this disclosure.

[0079] According to an aspect, there is provided computer software which, when executed by a processing means, is arranged to perform a method according to any aspect, claim, embodiment or example of this disclosure. The computer software may be stored on a computer readable medium. The computer software may be tangibly stored on a computer readable medium. The computer readable medium may be non-transitory.

[0080] Any controller or controllers described herein may suitably comprise a control unit or computational device having one or more electronic processors. Thus, the system may comprise a single control unit or electronic controller or alternatively different functions of the controller may be embodied in, or hosted in, different control units or controllers. As used herein the term “controller” or “control unit” will be understood to include both a single control unit or controller and a plurality of control units or controllers collectively operating to provide any stated control functionality. To configure a controller, a suitable set of instructions may be provided which, when executed, cause said control unit or computational device to implement the control techniques specified herein. The set of instructions may suitably be embedded in said one or more electronic processors. Alternatively, the set of instructions may be provided as software saved on one or more memory associated with said controller to be executed on said computational device. A first controller may be implemented in software run on one or more processors. One or more other controllers may be implemented in software run on one or more processors, optionally the same one or more processors as the first controller. Other suitable arrangements may also be used.

[0081] Within the scope of this disclosure it is expressly intended that the various aspects, embodiments, examples and alternatives set out in the preceding paragraphs, in the claims and / or in the following description and drawings, and in particular the individual features thereof, may be taken independently or in any combination. That is, all embodiments and / or features of any embodiment can be combined in any way and / or combination, unless such features are incompatible. The applicant reserves the right to change any originally filed claim or file any new claim accordingly, including the right to amend any originally filed claim to depend from and / or incorporate any feature of any other claim although not originally claimed in that manner.

[0082] BRIEF DESCRIPTION OF THE DRAWINGS

[0083] An embodiment of the present disclosure will now be described by way of example only and with reference to the accompanying drawings, in which:

[0084] Figure 1 shows an example of a method according to the present disclosure;

[0085] Figure 2 shows an example of a section of an apparatus according to the present disclosure;

[0086] Figure 3 shows an example of a section of an apparatus according to the present disclosure;

[0087] Figure 4 shows an example of a section of an apparatus according to the present disclosure;

[0088] Figure 5 shows an example of a section of an apparatus according to the present disclosure;

[0089] Figure 6 shows an example of a section of an apparatus according to the present disclosure;

[0090] Figure 7 shows an example of a section of an apparatus according to the present disclosure;

[0091] Figure 8 shows an example of a section of an apparatus according to the present disclosure;

[0092] Figure 9 shows an example of a section of an apparatus according to the present disclosure;

[0093] Figure 10 shows a series of examples of sections of an apparatus according to the present disclosure;

[0094] Figure 11 shows an example of a section of an apparatus according to the present disclosure;

[0095] Figure 12 shows an example of a section of an apparatus according to the present disclosure;

[0096] Figure 13 shows an example of a section of an apparatus according to the present disclosure;

[0097] Figure 14 shows an example of a manufacturing apparatus and method according to the present disclosure;

[0098] Figure 15 shows an example of a process performed with an apparatus according to the present disclosure; and Figure 16 shows an example of a process performed with an apparatus according to the present disclosure.

[0099] DETAILED DESCRIPTION

[0100] Referring firstly to Figure 1 , there is shown a method 2 of manufacturing an apparatus. The method 2 here comprises a first step 4 of forming an apparatus structure. This step 4 involves the formation of one or more integral pathway / s as a part 4b of the single formation step 4 here. Accordingly, a result of this step 4 is the completed formation of the apparatus 6. Optionally, after formation of the apparatus 6, the apparatus may be finalised in a subsequent step 8, such as with a post-formation process. For example, the formed apparatus may be fired, sintered or treated following formation.

[0101] In at least some examples, the method 2 comprises a method of 3D printing.

[0102] Referring now to Figure 2, there is shown an apparatus 10 formed according to the method of Figure 1 . Here, the apparatus 10 comprises an integrally-formed conductive portion 12 and an integrally-formed non-conductive portion 16. The conductive portion 12 is configured for the transformation of energy to heat. The conductive portion 12 is sufficiently conductive for the transmission of electricity, such as a passage of current therethrough or therealong. The non-conductive portion 16 is sufficiently non- conductive so as to inhibit electrical passage therethrough or therealong. The non- conductive portion 16 functions as an insulator. The non-conductive portion 16 comprises a sufficiently low conductance to act as an insulator for the conductive portion 12. The non-conductive portion 16 here comprises an insulative portion.

[0103] It will be appreciated that in at least some embodiments, the apparatus 10 comprises an integrally-formed magnetic portion / s and an integrally-formed non-magnetic portion / s. The magnetic portion / s comprises features similar to that of the conductive portion / s 12 described above and elsewhere in this disclosure. The non-magnetic portion / s comprises features similar to that of the non-conductive portion / s 16 described above and elsewhere in this disclosure. In at least some examples, the conductive portion / s 12 comprises magnetic portion / s; and the non-conductive portion / s 16 comprises non-magnetic portion / s.

[0104] The apparatus 10 shown in Figure 2 comprises an integrally-formed pathway 12. The pathway 12 here is at least one conductive portion of the apparatus 10. The pathway 12 here is a transmission pathway defining a transmission line for the transmission of a signal (e.g. a power and / or a communication signal). Here, in use, the signal comprises an electrical signal such that the pathway 12 is for transmitting / transporting energy to and within the apparatus 10. For example, the pathway 12 here is used for transmitting energy into a portion of the apparatus 10 during at least a portion of a process. The pathway 12 here comprises a longitudinal pathway, extending linearly along a central longitudinal axis 14.

[0105] In contrast to previous apparatuses, the present apparatus 10 structure is formed simultaneously with the pathway 12 - and the pathway 12 is formed simultaneously with the apparatus structure. Accordingly, the pathway 12 is entirely integrated within the apparatus 10. As explained with reference to Figure 1 , the method comprises forming the pathway 12 simultaneously with the adjacent apparatus structure, defined by a first material 16. Here, the adjacent apparatus structure 16 (formed of a second material) surrounds the pathway 12; and the adjacent apparatus structure comprises the non-conductive portion 16. The pathway 12 is encapsulated within the surrounding adjacent apparatus structure 16, with the pathway 12 being in direct contact with the adjacent apparatus structure 16. As illustrated in Figure 1 , the pathway 12 is completed upon formation of the apparatus 10 by additive manufacturing, the pathway 12 being complete upon formation of the adjacent apparatus structure 16, together with the adjacent apparatus structure 16. The pathway 12 is comprised of a broadly similar material to the adjacent apparatus 10 structure: the second material 12 shares one or more material properties with the first material 16.

[0106] Here, the pathway 12 comprises a mixture of constituent materials - and the mixture comprises at least similar constituent materials as the immediately adjacent (e.g. surrounding) portion / s of apparatus formed by the first material 16. Here, the first and second materials 16, 12 is comprised of the same constituent materials. The ratios of the constituent materials in the pathway 12 is different to the ratios of the constituent materials in the immediately adjacent (e.g. surrounding) portions of apparatus of the first material 16.

[0107] The pathway 12 comprises at least some same or similar characteristics to the immediately adjacent (e.g. surrounding) portion / s 16 of apparatus 10 of the first material 16. For example, the pathway 12 and the immediately adjacent (e.g. surrounding) portion / s 16 of apparatus 10 comprises a similar, comparable or at least compatible, thermal property, such as a coefficient of thermal expansion (CTE). The pathway 12 comprises a same or a similar chemical property to the immediately adjacent (e.g. surrounding) portion / s of apparatus. The pathway 12 comprises a similar bond to the immediately adjacent (e.g. surrounding) portion / s 16 of apparatus 10 as within the pathway 12 and within the immediately adjacent (e.g. surrounding) portion / s of apparatus 16.

[0108] In this embodiment here, the apparatus 10 comprises of three-phase composite nonoxide ceramics: Si3N4-MoSi2-SiC. The three-phase mixture of SisN4, SiC & MoSi2 enables a variation in electrical resistivity by variation of the ratios of the respective constituent components. The range of electrical resistivity is selectively variable between 10'3Qcm and 1012Qcm. The method comprises varying the ratios of constituent composite components to achieve a desired resistivity. The first material 16 comprises Si3N4-MoSi2-SiC in a first ratio; and the second material 12 comprises Si3N4-MoSi2-SiC in a second ratio. The second ratio provides a greater electrical conductivity (e.g. after sintering) than the first ratio. The first ratio provides an electrical insulator (e.g. after sintering). The second ratio provides an electrical conductor (e.g. after sintering). The first material 16 comprises a lower ratio of a conductive phase (e.g. the proportion of the conductive phases, such as MoSi2 / SiC) than the second material 12. The first material 16 comprises 50wt.% or more of SisN4. The electrically conductive mixture of Si3N4-MoSi2-SiC comprises an SisN4 amount of 25wt.% or less (in the second material 12). The insulating mixture comprises an SisN4 amount of 50wt.% or more. For example, the first material 16 here comprises 60% wt Sisl^ and 40% wt SiC / MoSi2.The second material 12 comprises 25% wt SisN4 and 75% wt SiC / MoSi2. The first material 16 comprises an electrical resistivity of about 1012Qcm. The second material 12 comprises an electrical resistivity of about 10'3Qcm. The second material 12 comprises a greater conductivity than the first material. In at least some embodiments, the second material 12, in use (e.g. after sintering) comprises a conductivity of about 104Q'1cm'1.

[0109] Reference is now made to Figure 3, in which is shown an example of a section of an apparatus 110. The apparatus 110 of Figure 3 is generally similar to that 10 shown in Figure 2, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 110 comprises a pathway 112 of a second material, integrally formed within an adjacent apparatus structure 116 of a first material.

[0110] Here, the pathway 112 comprises a circular cross-sectional profile, which remains constant along at least a portion of the longitudinal length of the pathway 112. It will be appreciated that in other embodiments, the cross-sectional profile varies along the longitudinal length of the pathway 112, such as in area and / or shape along the length of the pathway 112, so as to vary an associated characteristic of the pathway 12 (e.g. the resistivity or conductivity of the pathway 12). The pathway 112 is embedded within the apparatus structure 116, with the second material 112 being enclosed by the first material 116, at least when viewed in one or more cross-sections (e.g. the view of Figure 3). Accordingly, the second material 112 is spaced or distanced from a surface of the first material 116, such as a wall surface of the first material 116. The second material 112 is separated by a thickness “x” of the first material 116 from a wall or surface of the apparatus 110 as shown in Figure 3. Here, the second material 112 is embedded within the first material 116, with the first material 116 here defining at least one wall such that the second material 112 is separated from the at least one wall by a thickness of the first material 116, with the thickness “x” here being around 100pm. Accordingly, the pathway / second material 112 is separated here from a substance, such as a fluid, within the apparatus 110. The apparatus 110 is configured such that energy, such as heat, is indirectly transferred or transmitted to the internal portion of the apparatus 110 (which comprises a chamber, conduit and / or fluid) from or by the pathway / second material 112, said heat being transferred through the thickness “x” of the first material 116 separating the pathway / second material 112 from the internal portion.

[0111] Reference is now made to Figure 4, in which is shown an example of a section of an apparatus 210. The apparatus 210 of Figure 4 is generally similar to that 110 shown in Figure 3, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 210 comprises a pathway 212 of a second material, integrally formed within an adjacent apparatus structure 216 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0112] Here, the pathway 212 is located internally within an internal wall of the apparatus 210. The pathway 212 is enclosed by adjacent portions of the apparatus 210, such as wall or housing portions of the apparatus 210. As shown here, the separation “x” of the pathway / second material 212 from a surface 217 varies along the length of the pathway / second material 212. Here, the axis 214 is not linear along its entire length, with the pathway 212 following a 3-dimensional route through the apparatus. Accordingly, energy transferred by the pathway 212, such as electrical or heat energy can be brought to targeted portions of the apparatus 210 as desired - such as by reducing the separation “x” to increase localised heating of a fluid within or contacting the apparatus structure 216 at the reduced thickness “x”.

[0113] Reference is now made to Figure 5, in which is shown an example of a section of an apparatus 310. The apparatus 310 of Figure 5 is generally similar to that 210 shown in Figure 4, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 310 comprises a pathway 312 of a second material, integrally formed within an adjacent apparatus structure 316 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0114] In Figure 4, the provision of the first or second material is effectively digital, with the formation consisting of either the first or second material such that there is a distinct transition between the first and second materials 216, 212, defining a sharp boundary between the first and second materials 216, 212. In contrast, as shown in Figure 5, there is provided a gradual transition, such as by a gradual variation in the provided ratio from the first ratio to the second ratio (or vice) such that there is a gradual transition 318 between the first and second materials 316, 312. Accordingly, there is effectively no boundary; or at least no sharp boundary.

[0115] It will be appreciated that the pathway 312 and the adjacent apparatus structure 316 can be composed of the same first and second materials as the preceding examples. In at least some embodiments, the first and / or second material 316, 312 comprises a ceramic material, such an oxide and / or non-oxide ceramic. Here, the oxide comprises a metal oxide, such that the apparatus 310 is formed from at least one metal oxide, such as alumina having oxides of at least one of zirconium, barium, lanthanum, magnesium and cerium. Here, both the first material 316 and the second material 312 comprises a ceramic and additional component materials. The additional component materials is similar in the first and second materials 316, 312. The ratios of the ceramic and component materials in the first material 316 is different from the ratios of the ceramic and component materials in the second material 312.

[0116] Reference is now made to Figure 6, in which is shown an example of a section of an apparatus 410. The apparatus 410 of Figure 6 is generally similar to that 310 shown in Figure 5, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 410 comprises a pathway 412 of a second material, integrally formed within an adjacent apparatus structure 416 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness. Here the pathway 412 comprises a pathway for transmission or transportation of material. The pathway comprises a hollow portion 420, in the form of a lumen, or conduit. The material to be transmitted or transported comprises one or more of: a fluid; a liquid; a gas; a solid (e.g. in particulate form; and / or conveyed in a carrier fluid). Here, the hollow portion 420 is comprised with the solid-state pathway 412, with the pathway 412 comprising a solid-state pathway for transmission (e.g. of an electrical signal) and a collinear portion 420 for the transmission or transportation of a material. The collinear portion comprises a hollow portion. In at least some examples, the pathway comprises a lumen of the pathway material, such as the second material 412. Accordingly, the pathway 412 effectively comprises a lined pathway.

[0117] The pathway 412 here is configured for cooling, such as to controllably cool the apparatus 410. The pathway 412 comprises a cooling channel 420, for the passage of a cooling fluid or coolant in or within the apparatus 410, collinear with the pathway 412. It will be appreciated that in some examples, the channel 420 can be defined as a hollow channel within the first material 416, without requiring a lumen of the second material 412.

[0118] Reference is now made to Figure 7, in which is shown an example of a section of an apparatus 510. The apparatus 510 of Figure 7 is generally similar to that 410 shown in Figure 6, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 510 comprises a pathway 512 of a second material, integrally formed within an adjacent apparatus structure 516 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0119] Here the cross-sectional profile comprises a rectangular shape along at least a portion of the pathway 512. The cross-sectional profile is relatively flat along at least a portion of the pathway 512, with the pathway 512 comprising a greater width dimension than height / thickness dimension. In at least some uses, the relatively flat portion provides an increased transmissibility associated with the pathway 512, such as for increased heating in a preferred direction relative to the pathway 512 (e.g. in an upwards direction as viewed in Figure 7, towards a nearby)face of the apparatus 510).

[0120] It will be appreciated that the pathway 512 and the adjacent apparatus structure 516 can be composed of the same first and second materials 516, 512 as the preceding examples. However, in at least some embodiments, the first and / or second material comprises a filament / s, such as dispersed or distributed through the second material 512. In at least some embodiments, the filaments are only present in the second material 512 and not in the first material 516. In alternative embodiments, the filaments are present in both the first and second materials 516, 512 - with the filaments present in a higher concentration in the second material 512 relative to the first material 516. The filaments comprises conductive filaments, such as electrical and / or thermally conductive filaments. For example, the filaments comprises carbon filaments, or carbon-based filaments. The filaments comprises cellulose and / or cellulose-like filaments. The filament / s comprises graphitised carbon or graphene. The filament / s comprises graphitised carbon or graphene after sintering, such as following sintering of cellulose and / or cellulose-like filaments. Additionally, or alternatively, the filament / s comprises copper or copper-based filaments. In at least some examples, the second material comprises filaments distributed in a ceramic. The filaments is additive manufactured, such as deposited (e.g. 3D printed) from a nozzle (e.g. whereby filaments are present in mixture / s supplied to and from nozzle). The filaments are premixed with other substance / s for deposition from a same nozzle. For example, the filaments are present in a ceramic prior to supply to a deposition nozzle.

[0121] Here, the first and second materials 516, 512 can comprise at least one of ZrC>2 or AI2O3. The first and / or second material / s 516, 512 can comprise carbon nanofibers (CNF) such that the first and second materials are comprised of AhCh / ZrCh + optionally CNF (e.g. in the second material 512). In at least some examples, there is provided a ceramic matrix nanocomposite (CMC) material consisting of zirconia (or alumina) matrix with a homogeneous percolating 3D network of a few-layered-graphene (FLG) like sheets. In such embodiments, the method comprises a post-formation processing to provide the FLG. The method comprises the formation of the first and second materials 516, 512 by additive manufacturing, using a mixture of ceramic / s and natural cellulose nanofibers (CNF), followed by post-processing, such as spark plasma sintering (SPS), to transform the CNF to FLG.

[0122] Reference is now made to Figure 8, in which is shown an example of a section of an apparatus 610. The apparatus 610 of Figure 8 is generally similar to that 510 shown in Figure 7, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 610 comprises a pathway 612 of a second material, integrally formed within an adjacent apparatus structure 616 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness. Here, the pathway 612 is located on a wall 617 of the apparatus, the wall 617 here being of the first material 616 and defining a surface (e.g. internal) of the apparatus 610. Accordingly, the pathway / second material 612 here is in direct contact with an internal portion of the apparatus 610, along at least a portion of the pathway / second material 612. The pathway / second material is in direct contact with the interior of the apparatus: there is no thickness (e.g. reference “x” in Figure 7) of first material 616 separating the pathway / second material 612. Accordingly, the pathway / second material 612 can be used to directly transfer energy (e.g. heat) to the internal portion of the apparatus 610 - without requiring passage or transmittal through the first material 616.

[0123] Again, the apparatus 610 may be composed of the same first and second materials 616, 612 as other examples herein, such of Figure 2 or Figure 7. In at least some example embodiments, the second material 612 comprises a conductive metal (e.g. thermal and electrical), such as copper or a bronze or tin alloy - whereby the second material 612 can still comprise an additive manufactured conductive pathway 612.

[0124] Reference is now made to Figure 9, in which is shown an example of a section of an apparatus 710. The apparatus 710 of Figure 9 is generally similar to that 610 shown in Figure 8, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 710 comprises a pathway 712 of a second material, integrally formed within an adjacent apparatus structure 716 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0125] Here the pathway 712 comprises curved portions, with the pathway 712 defining a helical loop. Accordingly, the pathway 712 defines a circuit, with a start end 722 and a finish end 724. Here, the start end 722 and the finish end 724 are external to the apparatus 710, on an external surface. It will be appreciated that the start and finish ends 722, 724 are both connected to further apparatus for supply of electricity. The pathway 712 here is continuous, defining a continuous link from the start end 722 to the terminal end 724 The conductive material 712 is for varying a thermal property of the apparatus 710, with the electrical transmission being for temperature variation, by heating for temperature control. The transmission comprises a direct thermal transmission, such as via conduction along the transmission line. Here, the pathway 12 is configured for heating, to controllably heat the apparatus 710. The pathway 712 comprises an electrical resistor, configured to generate, radiate or emit heat in response to receipt of or passage therethrough of the electrical current. Reference is now made to Figure 10, in which is shown an example of a section of an apparatus 810. The apparatus 810 of Figure 10 is generally similar to that 710 shown in Figure 9, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 810 comprises a pathway 812 of a second material, integrally formed within an adjacent apparatus structure 816 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness. Figure 10a shows a schematic view of the apparatus 810, with the apparatus structure 816 formed of the first material shown after formation and post-formation processing. Figure 10b shows a first version of the apparatus 810 whereby a single pathway 812 is depicted, with the second material 816 shown illustratively semi-transparent purely for the purposes of indicating the 3dimensional course of the pathway 812 within the internal apparatus 810. Here it can be seen that the pathway 812 in Figure 10b follows a path along internal walls of the apparatus 810 whereby the pathway’s position varies radially and longitudinally such that the heat transferred from the pathway 812, functioning as an electrical heating resistor, is distributed internally throughout the apparatus 810. It will be appreciated that the two terminal ends of the pathway 812 can be connected to power supply terminals (e.g. outside the apparatus 810).

[0126] Figure 10c shows a similar depiction as Figure 10b, with a total of three separate pathways 812a, 812b, 812c. It will be appreciated that the three separate pathways 812a, 812b and 812c can each be electrically connected - such as in series, parallel or in entirely separate circuits. It will also be appreciated that the multiple pathways 812a, 812b, 812c can be controllably connected so as to vary the electrical input to each of the pathways 812a, 812b, 812c. Accordingly, different portions, regions of zones of the apparatus 810 (such as top, middle or bottom respectively as shown in Figure 10c) can be individually, independently heated. Here, each pathway 812a, 812b, 812c is configured to heat selected or selectable portion / s of the apparatus 810. Each pathway 812a, 812b, 812c is configured to vary the temperature in the apparatus 810, such as by providing different heating in different portions of the apparatus 810.

[0127] Figure 10d shows a further variation, with similar multiple pathways 812a, 812b, 812c as Figure 10c - along with additional pathways 812d, 812e and 812f. Here the additional pathways 812d, 812e and 812f are terminal pathways 812d, 812e and 812f, with respective ends terminating within the internal apparatus 810. At each end there is mounted a respective end device 830a, 830b, 830c. Here the end devices 830a, 830b, 830c are each temperature sensors (e.g. thermocouples) for monitoring temperature in respective zones or regions of the apparatus (e.g. top, middle and bottom as shown in Figure 10d). Respective signals from each of the end devices 830a, 830b, 830c is transmitted along the respective additional pathway 812d, 812e and 812f. Accordingly, information regarding temperature (distributions) within the apparatus 810 can be relayed (e.g. to a controller / control unit). Thereafter the received signals can be monitored and processed (e.g. automatically), such that the heating from the respective heating pathways 812a, 812b, 812c can be controlled (e.g. automatically) to specifically tailor the temperature within different regions or zones of the apparatus 810.

[0128] Reference is now made to Figure 11 , in which is shown an example of a section of an apparatus 910. The apparatus 910 of Figure 11 is generally similar to that 810 shown in Figure 10, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 910 comprises a pathway 912 of a second material, integrally formed within an adjacent apparatus structure 916 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0129] Here, the transmission comprises an indirect thermal transmission, such as whereby heat is induced by an electrical signal received in the pathways 912 formed of the second material 912. Here, the pathways 912 are discontinuous; and the electrical transmission is for the induction of heat. The electrical pathway 912 is for conversion of received energy into thermal energy, with each pathway 912 comprising an inductive element and the apparatus 910 being configured to be heated by induction. The apparatus 910 effectively comprises multiple internal portions of transmissive material, defined by the second material 912. As with other embodiments, the apparatus 910 comprises respective portions of the first and second materials 912, 916 according to an optimum distribution, such as defined, established and / or verified by modelling and / or simulation. The apparatus 910 comprises a distribution of conductive portions 912 for heating at locations within and throughout the apparatus 910 where heating is most desired such that the apparatus 910 is configured to provide a distributed energy supply for heating. The apparatus 910 is configured to provide an adaptive energy supply, adapting throughout the course of an operation or procedure performed by, in or with the apparatus 910. The proliferation of the respective portions 912 in and throughout the apparatus 910 enables a targeted and controllable energy supply. Reference is now made to Figure 12, in which is shown an example of a section of an apparatus 1010. The apparatus 1010 of Figure 12 is generally similar to that 910 shown in Figure 11 , with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 1010 comprises a pathway 1012 of a second material, integrally formed within an adjacent apparatus structure 1016 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0130] Here, the apparatus 1010 comprises an industrial processing apparatus, such as reactor for performing a chemical processing apparatus. Here, the method comprises assembling a plurality of parts 1040a, 1040b. The additively-manufactured parts 1040a, 104b each comprise an integral pathway 1012a, 1012b. The method comprises assembling the plurality of parts 1040a, 1040b such that the pathway 1012a of the first part 1040a aligns and connects with the pathway 1012b of the second part 1040b, such that a signal can be passed from the first module 1040a to the second module 1040b, along the respective pathway 1012a, 1012b. Here, the pathway 1012a, 1012b of each part is also independently connected, such as via a face or surface of the part non-adjacent another part of the assembly (e.g. to respective terminals of a power supply, not shown). Here, as shown in Figure 12, the plurality of additively- manufactured parts 1040a, 1040b comprises at least two housing portions of the apparatus 1010; and the manufacturing method comprises assembling two portions or halves of housing 1040a, 1040b to form a complete apparatus 1010 housing. The method comprises enclosing the apparatus 1010 by assembling the housing portions 1040a, 1040b (e.g. by effectively placing a lid 1040b on a base 1040a).

[0131] Reference is now made to Figure 13, in which is shown an example of a section of an apparatus 1110. The apparatus 1110 of Figure 13 is generally similar to that 1010 shown in Figure 12, with like reference numerals depicting like features, incremented by 100. Accordingly, the apparatus 1110 comprises a pathway 1112 of a second material, integrally formed within an adjacent apparatus structure 1116 of a first material. Not all definitions of all referenced features are repeated in the interests of conciseness.

[0132] Here, the parts 1140a, 1140b each comprise a module, such that the assembly is a modular assembly composed of the plurality of parts 1140a, 1140b. Here, the modules 1140a, 1140b comprise a plurality of stackable additively-manufactured modules. It will be appreciated that further modules (not shown) can be added as required. Referring now to figure 14, there is shown an example of a manufacturing apparatus 50 and method according to the present disclosure. It will be appreciated that the manufacturing apparatus 50 may be for the manufacture of any of the apparatuses in the other figures. Here, the method comprises additive forming using supply of at least two material constituents. The method comprises additive forming by contemporaneous supply of the first material 16 from a first nozzle 60 and of the second material 12 from a second nozzle 62. The first and second nozzles 60, 62 are comprised in a same (multi-nozzle) printhead 64. The nozzles 60, 62 can be operated sequentially (or simultaneously in some examples). The method comprises additive forming using supply of at least two material constituents 12, 16 from a formation or deposition head 64. The method comprises additive forming using a multi-nozzle 3D printing system 58. The method comprises forming the apparatus structure 16 contemporaneously with the integral pathway 12 using a multi-nozzle 3D printing head 64. The method comprises supplying material alternately from each nozzle 60, 62 such that each material constituent is alternately supplied to provide the apparatus materials 12, 16. In contrast to methods employing two nozzles whereby one nozzle is for supplying a (temporary) support material for the actual final component material, the present method comprises suppling material constituents 12, 16 from at least two nozzles 60, 62 whereby each constituent material 12, 16 forms part of the finalised apparatus 10. For example, none of the materials 12, 16 supplied comprises a temporary material, such as for removal in a post-formation process (e.g. similar to lost-wax type removal processes). The supply from each nozzle 60, 62 is controlled during formation to determine the deposition of the first or second material 12, 16 as appropriate. The mixtures of SiaN4, MoSi2 and SiC for forming each of the first and the second materials 12, 16 is premixed, each respective mixture being supplied to the respective nozzle 60, 62 (e.g. first mixture with first ratio to first nozzle 60 and second mixture with second ratio to second nozzle 62).

[0133] In at least some examples, the apparatus 10 undergoes a post-formation process. For example, after formation the apparatus 10 is subjected to a treatment process, such as a heat-treatment, firing, curing, sintering, or the like. The post-formation comprises a manufacturing step prior to use of the apparatus 10. The method comprises postformation processing of the pathway 12 and adjacent apparatus structure 16. As such, the method comprises post-formation processing. Here, the method comprises sintering, such as of the entire apparatus 10. For example, subsequent to formation (e.g. by 3D printing as shown in Figure 14), the apparatus 10 is exposed to elevated temperature (e.g. in excess of 1000°C) for a period of time (e.g. 12-24 hours). In at least some examples, the composites of the first and second materials 12, 16 are cosintered, simultaneously, following contemporaneous deposition by additive manufacturing. The first and second materials are co-sintered to provide excellent thermal, electrical and mechanical properties, such as to provide apparatus portions that are stable at elevated temperatures, such as in excess of 800°C, more than 1000°C; and even up to 1450°C (e.g. in air). The first and second materials 12, 16 are suitable for use in corrosive atmospheres (e.g. acidic liquids, hot steam, oxygen). The first and second materials 12, 16 are configured for Hazardous Areas. The first and second materials 12, 16 can have low specific weight.

[0134] Figure 15 shows an example of a process performed with an apparatus 1210 according to the present disclosure, such as similar to, or comprising, portions of apparatus shown in other figures. The process here comprises a distillation process, with the apparatus 1210 comprising a plurality of sensors and heating elements (e.g. similar to those shown in Figure 10) distributed within and throughout the apparatus 1210 such that temperatures within different portions of the apparatus 1210 can be automatically controlled and varied. In particular, the temperatures in respective zones is controlled in response to a signal or feedback from the sensors. The temperature is controlled over a period of time, such as during or throughout a distillation process. The distillation process can be continuous or batch. As well as internal devices at the end of (or intermediate on) pathways to monitor temperatures (and optionally pressures and flow rates), example apparatuses 1210 comprise devices connected to pathways in the form of one or more fluid control devices, such as one or more valves or pumps. Accordingly, the flow of fluid / s within or in / out of the apparatus 1210 can be selectively controlled - typically in response to a monitored parameter (via the sensors).

[0135] Figure 16 shows an example of a process performed with an apparatus 1310 according to the present disclosure. Here, the process comprises a (ad / de / ab)sorption process and a regeneration process, the process here being a thermal process. The process comprises performing at least a portion of the process in an apparatus 1310 with portions described previously herein, such as with an integrated heating or conductive pathway 1312. The method comprises temperature control. The method comprises targeted temperature control. The method comprises controlling different portions of the apparatus 1310 to locally control the temperature within those portions of the apparatus 1310. The method comprises a rapid heating, such as heating from a temperature of 20°C to 400°C in 10 seconds. Here, the process comprises a carbon capture process, capturing CO2 (e.g. from air or any CCh-rich process stream). The method comprises directing a CCh-containing fluid through the apparatus 1310, the apparatus here comprising a column. Here, the method comprises a dry scrubbing process. The method comprises a direct air capture. The column is effectively filled with a sorbent 1390. The method comprises directing a CO2 .containing fluid (e.g. a gas or air) through the solid (ad)sorbent 1390. For example, the (ad)sorbent 1390 comprises a supported amine-functionalized sorbent 1390 or metallic organic framework (MOF). Here, the apparatus 1310 comprises a monolithic structure, where the CO2 is adsorbed from the fluid (e.g. gas stream or air). In a next process step (e.g. subsequently, within the same apparatus 1310 as shown), steam or other sweep gas can be used to collect the CO2 and regenerate the adsorbent 1390. The apparatus 1310 comprises one or more chambers for receipt of the (ad)sorbent 1390. The (ad)sorbent 1390 is added to the apparatus 1310 following formation of the apparatus 1310 (e.g. by pumping, pouring or placing in the apparatus). The (ad)sorbent 1390 is added to the apparatus 1310 following additive manufacturing (and optionally after sintering where appropriate).

[0136] The method comprises optimisation of the locations and amounts of heatable material. The method comprises very fast volumetric heating of the (ad)sorbent 1390. The method comprises an optimal temperature profile over the apparatus 1310, here in vertical and radial directions. The method comprises avoiding the use of steam. In at least some examples, the method comprises a non-steam regeneration of (ad)sorbent 1390 1390. The method comprises a spatial heating control. The spatial heating control provides an optimal regeneration condition over the height and / or diameter of the reactor. The method comprises increasing the heating rate at the outer part / s of the sorbent 1390 (e.g. close to the reactor wall). The method comprises counteracting heat losses. The method comprises providing a (more) uniform temperature profile (e.g. lateral temperature profile).

[0137] The method comprises temperature control. The apparatus 1310 comprises a plurality of sensors and / or heating element / s distributed within or throughout the apparatus 1310 such that temperatures within different portion / s of the apparatus 1310 can be controlled and optionally varied. The temperatures are controlled automatically in response to a signal or feedback from the sensors. The temperature is controlled over a period of time, such as during or throughout (ad)sorption and / or regeneration of (ad)sorbent 1390. For example, the apparatus 1310 comprises integrated temperature sensors (e.g. thermocouples, which enable accurate and localized process control (at least compared to previous bed reactors). The temperature sensors enable temporal heating control, such as to allow adjustment of the local heating rate / s based on a position of the heating fronts (e.g. in order to minimize the overall heating duty cycle and thus optimize overall energy efficiency). The method comprises optimisation of a trade-off between electrical heating and convective heating. The method comprises heating specifically the first part of the (ad)sorbent 1390 bed, while the second part is heated by the fluid itself flowing through the apparatus 1310. The method comprises localised heating, such as directly from the pathway 1312 (e.g. functioning as electrical heating elements as such) and optionally via heating devices connected to the pathway 1312.

[0138] It should be understood that the embodiments described herein are merely exemplary and that various modifications may be made thereto without departing from the scope of the invention. For example, where the pathways are shown terminating at an external surface of the adjacent apparatus structure, in other examples, the pathways may be protrude from the apparatus.

[0139] It will be appreciated that embodiments of the present invention can be realised in the form of hardware, software or a combination of hardware and software. Any such software may be stored in the form of volatile or non-volatile storage such as, for example, a storage device like a ROM, whether erasable or rewritable or not, or in the form of memory such as, for example, RAM, memory chips, device or integrated circuits or on an optically or magnetically readable medium such as, for example, a CD, DVD, magnetic disk or magnetic tape. It will be appreciated that the storage devices and storage media are embodiments of machine-readable storage that are suitable for storing a program or programs that, when executed, implement embodiments of the present invention. Accordingly, embodiments provide a program comprising code for implementing a system or method as disclosed in any aspect, example, claim or embodiment of this disclosure, and a machine-readable storage storing such a program. Still further, embodiments of the present disclosure may be conveyed electronically via any medium such as a communication signal carried over a wired or wireless connection and embodiments suitably encompass the same.

[0140] All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and / or all of the steps of any method or process so disclosed, may be combined in any combination, except combinations where at least some of such features and / or steps are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Thus, unless expressly stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.

[0141] The invention is not restricted to the details of any foregoing embodiments. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification (including any accompanying claims, abstract and drawings), or to any novel one, or any novel combination, of the steps of any method or process so disclosed. The claims should not be construed to cover merely the foregoing embodiments, but also any embodiments which fall within the scope of the claims, including with equivalence as appropriate.

Claims

CLAIMS1. A ceramic apparatus, comprising an integrally-formed conductive ceramic portion / s and an integrally-formed non-conductive ceramic portion / s.

2. The ceramic apparatus of claim 1 , wherein the ceramic apparatus comprises a 3D apparatus comprising one or more of a: chamber; a void; hollow; an internal surface; an internal conduit; an internal portion; and / or a housing.

3. The ceramic apparatus of claim 1 or 2, wherein, the conductive portion is sufficiently conductive for the transmission of electrical current therethrough or therealong; and the non-conductive portion is sufficiently non-conductive so as to inhibit electrical current passage therethrough or therealong.

4. The ceramic apparatus of any preceding claim, wherein, the ceramic apparatus comprises a heating apparatus and the conductive portion / s is / are configured for the transformation of energy to heat.

5. The ceramic apparatus of any preceding claim, wherein the ceramic apparatus is formed with additive manufacturing.

6. The ceramic apparatus of any preceding claim, wherein the ceramic apparatus comprises an integrally-formed pathway defined by the conductive portion.

7. The ceramic apparatus of claim 6, wherein the pathway is a transmission pathway for the transmission of a signal.

8. The ceramic apparatus of claim 7, wherein the signal comprises a power and / or a communication signal.

9. The ceramic apparatus of any of claims 6 to 8, wherein the apparatus’ structure is formed simultaneously with the pathway, the pathway being entirely integrated within the apparatus, the adjacent apparatus structure at least partially surrounding the pathway, the adjacent apparatus structure comprising the non-conductive portion.

10. The ceramic apparatus of any of claims 6 to 9, wherein the pathway comprises a solid-state pathway, integrally-formed with the immediately adjacent portion of apparatus, the material of the pathway being contemporaneously additively formed in the apparatus with the immediately adjacent portion of apparatus, with the pathway being comprised of a compatible material to the immediately adjacent portion of apparatus.

11. The ceramic apparatus of any of claims 6 to 10, wherein the pathway is continuous, non-hollow, solid-state at an operating temperature, the operating temperature comprising an elevated temperature of more than 50°C; and the pathway is configured to heat the apparatus to the operating temperature whenan electrical current is supplied to the pathway, the pathway comprising an electrical resistor configured to generate, radiate and / or emit heat in response to receipt of or passage therethrough of an electrical signal. The ceramic apparatus of any of claims 6 to 11 , wherein the apparatus comprises a plurality of pathways for transmitting a plurality of feedback signals from a plurality of devices positioned at a plurality of locations within or throughout the apparatus. The ceramic apparatus of claim 12, wherein the apparatus comprises one or more sensors for monitoring a property / ies within the apparatus; and one or more controllable elements for controlling or at least influencing the property / ies in response to the monitoring. The ceramic apparatus of claim 13, wherein the sensor comprises a sensor for monitoring temperature / s and / or pressure / s; and the one or more controllable elements comprises a heating element. The ceramic apparatus of any of claims 6 to 14, wherein the pathway comprises a start end and a finish end, at least one end being external to the apparatus and connected to further apparatus for supply of electricity; and one of the start and finish ends is internally located within the apparatus, such that the pathway has a terminal end within the apparatus. The ceramic apparatus of any of claims 6 to 15, wherein the pathway comprises a cross-sectional profile that varies in area and / or shape along a length of the pathway. The ceramic apparatus of any preceding claim, wherein the integrally-formed non-conductive ceramic portion is comprised of a first material; and the integrally-formed conductive ceramic portion is comprised of a second material, wherein each of the materials of the integrally-formed non-conductive and conductive ceramic portions are formed from similar constituents, with the ratios of the constituents being different in the respective conductive and non- conductive portions. The ceramic apparatus of claim 17, wherein the constituents of both the first and second materials comprise at least three components, such that both the first and second materials comprise three-phase non-oxide ceramic composites. The ceramic apparatus of claim 17 or 18, wherein the first and second materials are both non-oxide ceramic composites comprising of, SiaN4, SiC & MoSi2 components, with a variation in electrical resistivity between the respectiveconductive and non-conductive portions being associated with a variation of the ratios of the respective constituent components. The ceramic apparatus of claim 19, wherein the first material comprises SiaN4 -SiC-MoSi2 in a first ratio; and the second material comprises SiaN4 -SiC-MoSi2 in a second ratio, the second ratio providing a greater electrical conductivity after sintering than the first ratio. The ceramic apparatus of claim 20, wherein the first material comprises an electrical resistivity in a range of 108Qcm to 1018Qcm; and the second material comprises an electrical resistivity in a range of 10'8Qcm to 10'2Qcm. The ceramic apparatus of any of claims 17 to 21 , wherein the second material is embedded in the first material such that the second material is spaced from a surface of the first material, the second material being separated by a thickness of the first material from the surface, the thickness comprising at least 1 pm. The ceramic apparatus of any preceding claim, wherein the apparatus is configured to adaptively control a rate of a process. The ceramic apparatus of any preceding claim, wherein the apparatus comprises one or more cooling elements, the cooling element being arranged with the pathway, the pathway being for transmitting energy for heating into or around the apparatus; and the cooling element is for cooling the apparatus. The ceramic apparatus of any preceding claim, wherein the apparatus comprises a controllable reactor with integrally-formed electrically-conductive elements for controlling the reactor temperature.

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