Method for producing an optoelectronic component, and optoelectronic component

Abstract

The invention relates to a method for producing an optoelectronic component comprising steps for forming a grid having connecting pieces of an electrically conductive material on a rear side of a transparent substrate, wherein cells of the grid are formed between the connecting pieces, for arranging a wavelength-converting material in at least one cell of the grid, for arranging optoelectronic semiconductor chips over the cells of the grid, wherein each optoelectronic semiconductor chip has a front side and a rear side, wherein the front sides of the optoelectronic semiconductor chips are orientated towards the rear side of the substrate, wherein the optoelectronic semiconductor chips are electrically conductively connected to the grid, for arranging a filler material on the rear side of the substrate, wherein the optoelectronic semiconductor chips are embedded in the filler material in such a way that the rear sides of the optoelectronic semiconductor chips are not covered by the filler material, and for arranging a driver chip over the rear sides of the optoelectronic semiconductor chips, wherein the optoelectronic semiconductor chips are electrically conductively connected to the driver chip.

Description

[0001] METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

[0002] AND OPTOELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention relates to a method for producing an optoelectronic component and to an optoelectronic component.

[0005] This patent application claims priority from German patent application 10 2023 111 267 . 8 , the disclosure of which is hereby incorporated by reference .

[0006] Pixelated optoelectronic components are known in the art and are used, for example, as headlights in motor vehicles. For such components, a high contrast ratio between adjacent pixels is desirable.

[0007] One object of the present invention is to provide a method for producing an optoelectronic component. A further object of the present invention is to provide an optoelectronic component. These objects are achieved by a method for producing an optoelectronic component and by an optoelectronic component having the features of the independent claims. Various developments are specified in the dependent claims.

[0008] A method for producing an optoelectronic component comprises steps for forming a grid with webs made of an electrically conductive material on a rear side of a transparent substrate, wherein cells of the grid are formed between the webs, for arranging a wavelength-converting material in at least one cell of the grid, for arranging optoelectronic semiconductor chips over the cells of the grid, wherein each optoelectronic semiconductor chip has a front side and a rear side, wherein the front sides of the optoelectronic semiconductor chips are oriented towards the rear side of the substrate, wherein the optoelectronic semiconductor chips are electrically conductively connected to the grid, for arranging a filling material on the rear side of the substrate, wherein the optoelectronic semiconductor chips are embedded in the filling material in such a way,that the back sides of the optoelectronic semiconductor chips are not covered by the filling material, and for arranging a driver chip over the back sides of the optoelectronic semiconductor chips, wherein the optoelectronic semiconductor chips are electrically conductively connected to the driver chip.

[0009] In this process, the optoelectronic component is built upside down on the substrate serving as the active outer side. The grating on the back of the substrate, provided for electrically contacting the optoelectronic semiconductor chips, can advantageously also optically separate the pixels of the optoelectronic component obtained by the process, which can result in an increased contrast ratio. In addition, the grating serves to accommodate the wavelength-converting material, whereby the optoelectronic component obtained by the process can offer integrated wavelength conversion.A further advantage of the process and the optoelectronic component obtained by the process is that the optoelectronic semiconductor chips are electrically contacted from both their front and back sides, which can simplify the wiring and improve thermal coupling of the optoelectronic semiconductor chips. The process can be performed at the wafer level, which can advantageously result in low manufacturing costs.

[0010] In one embodiment of the method, before arranging the fill material, a further step is carried out to provide a via structure on the back of the substrate that is electrically conductively connected to the grid. The via structure is embedded in the fill material in such a way that a back of the via structure is not covered by the fill material. Subsequently, the via structure is electrically conductively connected to the driver chip. As a result, the via structure establishes an electrically conductive connection between the driver chip and the grid arranged on the back of the substrate, and thus also an electrically conductive connection between the driver chip and the electrical contacts of the optoelectronic semiconductor chips arranged on the front sides of the optoelectronic semiconductor chips.

[0011] In one embodiment of the method, no wavelength-converting material is arranged in at least one cell of the grating. This offers the advantage that the different cells, and thus the different pixels of the optoelectronic component obtained by the method, can be designed differently.

[0012] In one embodiment of the method, the filler material is also arranged in cells in which no wavelength-converting material is arranged. This advantageously avoids a cavity between the front side of an optoelectronic semiconductor chip and the back side of the substrate, thereby preventing disadvantageous jumps in the refractive index in this region.

[0013] In one embodiment of the method, optoelectronic semiconductor chips of different types are arranged over the cells of the grid. This advantageously makes it possible to form pixels of the optoelectronic component obtainable by the method with different properties.

[0014] In one embodiment of the method, after the filling material has been arranged on the back side of the substrate, a further step is carried out to remove a portion of the filling material in order to expose the back sides of the optoelectronic semiconductor chips. This makes it possible to initially arrange the filling material such that the back sides of the optoelectronic semiconductor chips are covered by the filling material. The back sides of the optoelectronic semiconductor chips are then exposed again by removing a portion of the filling material. This advantageously makes the method particularly easy to carry out.

[0015] In one embodiment of the method, prior to arranging the optoelectronic semiconductor chips, a further step is performed for arranging an electrically conductive connecting material on the webs of the grid. The optoelectronic semiconductor chips are then electrically conductively connected to the grid via the connecting material. This advantageously enables particularly simple production of electrically conductive connections between the optoelectronic semiconductor chips and the grid.

[0016] In one embodiment of the method, the grating is formed with a thickness between 2 pm and 20 pm. This advantageously makes the cells of the grating suitable for accommodating wavelength-converting material. Furthermore, the grating enables optical separation of the individual pixels of the optoelectronic component obtained by the method.

[0017] In one embodiment of the method, in addition to the grating, further similar gratings are formed on the back of the substrate. The above process steps are also carried out for each additional grating. The driver chip is provided with further similar driver chips in a wafer composite. The optoelectronic semiconductor chips assigned to one of the further gratings are electrically conductively connected to one of the further driver chips. At the end of processing, the optoelectronic component and further similar optoelectronic components are separated. Advantageously, the method thus enables parallel production of a large number of similar optoelectronic components at wafer level. This makes it possible to carry out the method particularly cost-effectively.

[0018] An optoelectronic component comprises a transparent substrate with a back side. A grid with webs made of an electrically conductive material is formed on the back side of the substrate. Cells of the grid are formed between the webs. A wavelength-converting material is arranged in at least one cell of the grid. Optoelectronic semiconductor chips are arranged above the cells of the grid, each optoelectronic semiconductor chip having a front side and a back side. The front sides of the optoelectronic semiconductor chips are oriented towards the back side of the substrate. The optoelectronic semiconductor chips are electrically conductively connected to the grid. A fill material is arranged on the back side of the substrate. The optoelectronic semiconductor chips are embedded in the fill material in such a way that the back sides of the optoelectronic semiconductor chips are not covered by the fill material.A driver chip is arranged above the backs of the optoelectronic semiconductor chips. The optoelectronic semiconductor chips are electrically connected to the driver chip.

[0019] The grating on the back of the substrate provided for electrically contacting the optoelectronic semiconductor chips can advantageously also optically separate the pixels of the optoelectronic component realized by the optoelectronic semiconductor chips, which can result in an increased contrast ratio. In addition, the grating serves to accommodate the wavelength-converting material, whereby the optoelectronic component offers integrated wavelength conversion. A further advantage of this optoelectronic component is that the optoelectronic semiconductor chips are electrically contacted from both their front and back sides, which can simplify wiring and improve thermal coupling of the optoelectronic semiconductor chips.

[0020] In one embodiment of the optoelectronic component, it comprises more than 50,000 optoelectronic semiconductor chips, in particular more than 100,000 optoelectronic semiconductor chips. This enables the optoelectronic component to generate images with high resolution.

[0021] In one embodiment of the optoelectronic component, at least one of the optoelectronic semiconductor chips is designed as a light-emitting diode chip, as a VCSEL chip, or as a detector chip. It is also possible for the optoelectronic component to comprise optoelectronic semiconductor chips of different types, each of which can be designed as light-emitting diode chips, as VCSEL chips, or as detector chips. This advantageously enables a high degree of flexibility in the design of the optoelectronic component.

[0022] In one embodiment of the optoelectronic component, the filler material is a spin-on glass. Advantageously, the filler material can then be applied easily and cost-effectively and exhibits favorable mechanical and dielectric properties.

[0023] In one embodiment of the optoelectronic component, the filler material is reflective or absorbent. This advantageously allows crosstalk between adjacent optoelectronic semiconductor chips to be particularly effectively reduced.

[0024] In one embodiment of the optoelectronic component, the driver chip is a silicon chip. Advantageously, the driver chip can then integrate various electronic functionalities. In one embodiment of the optoelectronic component, the substrate comprises glass. Advantageously, light generated by the optoelectronic component can then be emitted through the substrate.

[0025] In one embodiment of the optoelectronic component, a front side of the substrate has a structure. For example, such a structure can provide optical functionality. For example, the front side of the substrate can be designed as a microlens array.

[0026] The above-described properties, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understandable in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings. In each case, a schematic representation shows

[0027] Fig. 1 shows a substrate with a grating arranged on its back side;

[0028] Fig. 2 is a plan view of the grid;

[0029] Fig. 3 shows the grating with wavelength converting material arranged in cells of the grating;

[0030] Fig. 4 shows the grid with a connecting material arranged thereon;

[0031] Fig. 5 shows optoelectronic semiconductor chips arranged above the cells of the grid;

[0032] Fig. 6 shows a filling material arranged on the back of the substrate, into which the optoelectronic semiconductor chips have been embedded; and Fig. 7 shows an optoelectronic component obtained by further processing steps.

[0033] Fig. 1 shows a schematic sectional side view of a substrate 100 with a front side 101 and a rear side 102 opposite the front side 101. The substrate 100 can also be referred to as a carrier. The substrate 100 comprises a transparent material, for example, glass. The substrate 100 can be formed, for example, as a glass wafer.

[0034] In a direction perpendicular to the front side 101 and the back side 102, the substrate 100 can have, for example, a thickness between 50 pm and 500 pm, in particular, for example, a thickness between 50 pm and 150 pm.

[0035] A grid 200 with webs 210 made of an electrically conductive material is formed on the rear side 102 of the substrate 100. The electrically conductive material may comprise copper, for example. The webs 210 of the grid 200 have a thickness 205 in the direction perpendicular to the rear side 102 of the substrate 100, which thickness may, for example, be between 2 pm and 20 pm.

[0036] Fig. 2 shows a schematic perspective view of a part of the grid 200 formed on the back side 102 of the substrate 100. Cells 220 of the grid 200 are formed between the webs 210. In the example shown, the cells 220 have an approximately square shape. However, the cells 220 could also have a different rectangular shape or a non-rectangular shape. In the example shown in Figs. 1 and 2, all the webs 210 of the grid 200 are connected to one another in a continuous manner and each completely and tightly enclose the cells 220. However, the grid 200 could also have a plurality of separate sections, each comprising a number of webs. For example, the grid 200 could be divided row by row or column into separate sections, each of which is electrically isolated from one another.In this case, it is possible that the webs 210 do not completely and tightly enclose the cells 220 of the grid 200. Instead, neighboring cells 220 could, for example, be open to one another.

[0037] Fig. 3 shows a schematic sectional side view of the substrate 100 with the grating 200 arranged on its rear side 102 in a processing stage chronologically subsequent to the illustration in Figs. 1 and 2. A wavelength-converting material 250 has been arranged in the cells 220 of the grating 200. It is expedient if the wavelength-converting material 250 completely fills the cells 220, but is limited to the cells 220 and does not cover the intermediate webs 210. The introduction of the wavelength-converting material 250 into the cells 220 of the grating 200 can be carried out, for example, by a spraying process (spray coating) or by doctor blade coating. Optionally, a masking or a stencil can be used.

[0038] In the example shown, all cells 220 of the grating 200 have been filled with the wavelength-converting material 250. However, it is possible to selectively not fill individual cells 220 of the grating 200 with wavelength-converting material 250. These cells 220 remain empty. It is also possible to fill different cells 220 with different wavelength-converting material 250.

[0039] The wavelength-converting material 250 is designed to at least partially convert light having a wavelength from a first wavelength range into light having a wavelength from another wavelength range. For example, the wavelength-converting material 250 can be designed to convert light having a wavelength from the blue or ultraviolet spectral range into light having a wavelength from the yellow or orange spectral range.

[0040] Fig. 4 shows a schematic sectional side view of a processing stage subsequent to the illustration in Fig. 3. An electrically conductive connecting material 270 has been arranged on the webs 210 of the grid 200. The connecting material 270 can be a solder, for example, and can comprise indium or a tin-indium alloy, for example. The connecting material 270 can be applied, for example, by chemical vapor deposition (CVD) or by a cathode sputtering process and can have a layer thickness of between 200 nm and 400 nm, for example. It is expedient if the connecting material 270 essentially completely covers the webs 210.

[0041] Fig. 5 shows a schematic sectional side view of a processing stage following the illustration in Fig. 4. Optoelectronic semiconductor chips 300 have been arranged above the cells 220 of the grid 200 on the back side 102 of the substrate 100. Each of the optoelectronic semiconductor chips 300 has a front side 301 and a back side 302 opposite the front side 301. The optoelectronic semiconductor chips 300 have been arranged such that their front sides 301 are oriented towards the back side 102 of the substrate 100.

[0042] The optoelectronic semiconductor chips 300 have been electrically conductively connected to the grid 200 at their front sides 301 via the connecting material 270. If all sections of the grid 200 are electrically conductively connected to one another, the front sides 301 of all optoelectronic semiconductor chips 300 are also electrically conductively connected to one another. If the grid 200 has a plurality of sections that are electrically insulated from one another, the front sides 301 of all optoelectronic semiconductor chips 300 connected to a common section of the grid 200 are electrically conductively connected to one another.

[0043] It is expedient if an optoelectronic semiconductor chip 300 is arranged above each cell 220 of the grid 200. However, it is also possible for individual cells 220 of the grid 200 to remain free.

[0044] All optoelectronic semiconductor chips 300 can be of the same type, i.e., have a similar design. However, it is also possible to arrange optoelectronic semiconductor chips 300 of different types above the cells 220 of the grid 200. At least some of the optoelectronic semiconductor chips 300 can be designed, for example, as light-emitting diode chips (LED chips). At least some optoelectronic semiconductor chips 300 can be designed as vertically emitting laser chips (VCSEL chips). Optoelectronic semiconductor chips 300 designed as light-emitting diode chips or as laser chips are provided to emit light on their front sides 301.If wavelength-converting material 250 is arranged in the cell 220 of the grating 200 assigned to such an optoelectronic semiconductor chip 300, the wavelength-converting material 250 can partially or completely convert the light emitted by the optoelectronic semiconductor chip 300 into light of a different wavelength. If no wavelength-converting material 250 is arranged in the assigned cell 220 of the grating 200, the light emitted by the optoelectronic semiconductor chip 300 remains unconverted.

[0045] All optoelectronic semiconductor chips 300 designed as light-emitting diode chips or as laser chips can be designed identically and provided for emitting light from the same wavelength range. However, it is also possible for the optoelectronic semiconductor chips 300 to comprise semiconductor chips provided for emitting light from different wavelength ranges. For example, it is conceivable that optoelectronic semiconductor chips 300, which are provided for emitting light with blue, red and green light colors, are arranged above adjacent cells 220 of the grid 200. A set of such cells 220 and optoelectronic semiconductor chips 300 can then be combined to form a logical image point (pixel).

[0046] At least some optoelectronic semiconductor chips 300 can also be designed as detector chips, for example, as photodiodes or phototransistors. In this case, it is expedient not to fill the associated cells 220 of the grating 200 with wavelength-converting material 250.

[0047] The front sides 301 of the optoelectronic semiconductor chips

[0048] 300 each have a size that is matched to the size of the associated cell 220 of the grid 200. It is expedient if the front sides 301 of the optoelectronic semiconductor chips 300 are each slightly larger than the associated cells 220 of the grid 200, so that the connecting material 270 arranged on the webs 210 surrounding the respective cell 220 can electrically contact the respective optoelectronic semiconductor chip 300. The front sides

[0049] 301 of the optoelectronic semiconductor chips 300 can, for example, have edge lengths in the range between 10 pm and 50 pm. It is conceivable that different optoelectronic semiconductor chips 300 arranged above the cells 220 of the grid 200 can have different sizes. In this case, different cells 220 of the grid 200 can also have different sizes.

[0050] It is expedient to arrange the optoelectronic semiconductor chips 300 by means of a parallel method above the cells 220 of the grid 200. In this case, several or all of the optoelectronic semiconductor chips 300 are arranged simultaneously above the cells 220 of the grid 200 on the rear side 102 of the substrate 100 in a common processing step. In a further processing step, one or more via structures 230 are provided on the rear side 102 of the substrate 100. The via structures 230 are electrically conductively connected to the grid 200. If the grid 200 has a plurality of electrically separated sections, at least one via structure 230 is provided per section of the grid 200. However, it may be expedient to provide a plurality of through-contact structures 230 for an electrically connected section of the grid 200, which are distributed, for example, over different regions of the grid 200.

[0051] In the example shown, the via structures 230 are arranged on the webs 210 of the grid 200 and are thus electrically conductively connected to the webs 210 of the grid 200. However, other arrangements are also possible.

[0052] The via structures 230 extend from the grid 200 in a direction perpendicular to the rear side 102 of the substrate 100. Each via structure 230 has a rear side 232 facing away from the grid 200, which is expediently arranged in a common plane with the rear sides 302 of the optoelectronic semiconductor chips 300.

[0053] The via structures 230 can, for example, be placed as prefabricated elements on the grid 200 and electrically connected thereto. It is also possible to produce the via structures 230 directly on the backside 102 of the substrate 100, or on the webs 210 of the grid 200, for example, by a galvanic process.

[0054] Fig. 6 shows a schematic sectional side view of a processing stage chronologically subsequent to the illustration in Fig. 5. A filler material 400 has been arranged on the rear side 102 of the substrate 100. The optoelectronic semiconductor chips 300 have been embedded in the filler material 400 in such a way that the rear sides 302 of the optoelectronic semiconductor chips 300 are not covered by the filler material 400. Side surfaces 303 extending between the front sides 301 and the rear sides 302 of the optoelectronic semiconductor chips 300 have, however, been covered by the filler material 400. The via structures 230 have also been embedded in the filler material 400, wherein the rear sides 232 of the via structures 230 are also not covered by the filler material 400.

[0055] The filler material 400 is a dielectric material. The filler material 400 may, for example, comprise a glass. For example, the filler material 400 may be a spin-on glass. The filler material 400 may be transparent or optionally reflective or absorbent, for example, by admixing reflective or absorbent particles.

[0056] The fill material 400 may have been arranged on the back side 102 of the substrate 100 such that the back sides 302 of the optoelectronic semiconductor chips 300 and the back sides 232 of the through-contact structures 230 were initially covered by the fill material 400. In this case, a portion of the fill material 400 may subsequently have been removed to expose the back sides 302 of the optoelectronic semiconductor chips 300 and the back sides 232 of the through-contact structures 230. This may have been achieved, for example, by planarization, for example, by an etching process.

[0057] It is possible for the filler material 400 to have also been arranged in cells 220 of the grating 200 in which no wavelength-converting material 250 had previously been arranged. If, during the preceding processing steps, a distance remained between the front sides 301 of the optoelectronic semiconductor chips 300 arranged above the cells 220 and the wavelength-converting material 250 arranged in the cells 220, the filler material 400 can also fill this space. Fig. 7 shows a schematic sectional side view of a processing stage which follows the illustration in Fig. 6. A driver chip 500 has been arranged above the back sides 302 of the optoelectronic semiconductor chips 300, above the back sides 232 of the through-contact structures 230 and above the filler material 400.A front side 501 of the driver chip is oriented toward the back sides 302 of the optoelectronic semiconductor chips 300 and the back sides 232 of the through-contact structures 230. The back sides 302 of the optoelectronic semiconductor chips 300 and the back sides 232 of the through-contact structures 230 are electrically conductively connected to contact surfaces provided on the front side 501 of the driver chip 500.

[0058] The driver chip 500 can, for example, be embodied as a silicon chip. However, the driver chip 500 can also be based on a different semiconductor system, for example on a II IV semiconductor system. The driver chip 500 has electrical circuits for controlling the optoelectronic semiconductor chips 300 and can have further electronic functionalities. The optoelectronic semiconductor chips 300 are controlled via the electrically conductive connections between the rear sides 302 of the optoelectronic semiconductor chips 300 and the electrical contacts on the front side 501 of the driver chip 500, as well as via the contacts mediated via the connecting material 270, the grid 200, and the via structures 230 between the front sides 301 of the optoelectronic semiconductor chips 300 and the associated electrical contact areas on the front side 501 of the driver chip 500.

[0059] In the processing state shown in Fig. 7, the arrangement shown forms an optoelectronic component 10, the production of which can be completed. The front side 101 of the substrate 100 forms a front side of the optoelectronic component 10. A back side 502 of the driver chip 500, opposite the front side 501 of the driver chip 500, forms a back side of the optoelectronic component 10. The optoelectronic component 10 is designed to emit light generated by the optoelectronic semiconductor chips 300 at the front side 101 of the substrate 100. It may be possible to control the optoelectronic semiconductor chips 300 separately from one another in order to generate a two-dimensional light pattern composed of individual image points (pixels) with a predefinable and changeable shape. The optoelectronic component 10 can, for example, have more than 10 000 , more than 50 , 000 or even more than 100 .000 optoelectronic semiconductor chips 300, which can be arranged, for example, in a rectangular matrix arrangement.

[0060] The grid 200 electrically contacting the optoelectronic semiconductor chips 300 on the back side 102 of the substrate

[0061] 100 advantageously simultaneously forms a diaphragm that optically shields optoelectronic semiconductor chips 300 arranged above adjacent cells 220 of the grid 200 from one another. This makes it possible to achieve a high contrast ratio between adjacent pixels of the optoelectronic component 10.

[0062] The substrate 100 may have one or more integrated optical functionalities. For example, the front side 101 of the substrate 100 may have a structuring that has a light-shaping effect. For example, the front side

[0063] 101 of the substrate 100 can be designed as a microlens array, wherein, for example, a microlens is arranged over each cell 220 of the grating 200. It is expedient to apply the structuring of the front side 101 of the substrate 100 before the processing step shown in Fig. 1 for forming the grating 200 on the back side 102 of the substrate 100 is carried out.

[0064] The manufacturing method described above can be carried out at wafer level in such a way that a plurality of identical optoelectronic components 10 are manufactured simultaneously in common processing steps. For this purpose, the substrate 100 is provided with a sufficient size, for example as a glass wafer. A plurality of identical gratings 200 are formed next to one another on the rear side 102 of the substrate 100, for example in a matrix arrangement. The process steps described above are then carried out simultaneously and in the same way for each of the gratings 200. The filling material 400 is arranged over the rear side 102 of the entire substrate 100 in such a way that the optoelectronic semiconductor chips 300 of all optoelectronic components 10 obtainable by the method are embedded in the filling material 400 simultaneously.The driver chip 500 is provided together with other similar driver chips 500 in a wafer assembly 510 and connected to the arrangement such that the optoelectronic semiconductor chips 300 assigned to a grid 200 are each electrically conductively connected to one of the driver chips 500. At the end of the processing, a step for singulating the optoelectronic components 10 takes place, wherein the substrate 100 and the wafer assembly 510 are divided such that each optoelectronic component 10 comprises a section of the substrate 100 with one of the grids 200 and one of the driver chips 500.

[0065] The invention has been illustrated and described in more detail using preferred embodiments. However, the invention is not limited to the disclosed examples. Other variations may be devised by those skilled in the art.

[0066] LIST OF REFERENCE SYMBOLS optoelectronic component substrate front side back side grid thickness ridge cell through-contact structure back side wavelength-converting material connecting material optoelectronic semiconductor chip front side back side surface filling material driver chip front side back side wafer composite

Claims

PATENT CLAIMS 1. A method for producing an optoelectronic component (10) comprising the following steps: - forming a grid (200) with webs (210) made of an electrically conductive material on a rear side (102) of a transparent substrate (100), wherein cells (220) of the grid (200) are formed between the webs (210); - arranging a wavelength-converting material (250) in at least one cell (220) of the grating (200); - arranging optoelectronic semiconductor chips (300) over the cells (220) of the grid (200), each optoelectronic semiconductor chip (300) having a front side (301) and a back side (302), the front sides (301) of the optoelectronic semiconductor chips (300) being oriented towards the back side (102) of the substrate (100), the optoelectronic semiconductor chips (300) being electrically conductively connected to the grid (200); - Arranging a filling material (400) on the back side (102) of the substrate (100), wherein the optoelectronic semiconductor chips (300) are embedded in the filling material (400) in such a way that the back sides (302) of the optoelectronic semiconductor chips (300) are not covered by the filling material (400); - Arranging a driver chip (500) over the backs (302) of the optoelectronic semiconductor chips (300), wherein the optoelectronic semiconductor chips (300) are electrically conductively connected to the driver chip (500).

2. The method according to claim 1, wherein the following step is carried out before arranging the filling material (400): - providing a through-contact structure (230) electrically conductively connected to the grid (200) on the rear side (102) of the substrate (100), wherein the through-contact structure (230) is embedded in the filling material (400) such that a back (302) of the via structure is not covered by the filling material (400), wherein the via structure (230) is electrically conductively connected to the driver chip (500).

3. Method according to one of the preceding claims, wherein no wavelength-converting material (250) is arranged in at least one cell (220) of the grating (200).

4. The method according to claim 3, wherein the filling material (400) is also arranged in cells (220) in which no wavelength-converting material (250) is arranged.

5. Method according to one of the preceding claims, wherein optoelectronic semiconductor chips (300) of different types are arranged over the cells (220) of the grid (200).

6. The method according to any one of the preceding claims, wherein after arranging the filling material (400) on the back side (102) of the substrate (100), the following step is carried out: - removing a part of the filling material (400) to expose the back sides (302) of the optoelectronic semiconductor chips (300).

7. Method according to one of the preceding claims, wherein the following step is carried out before arranging the optoelectronic semiconductor chips (300): - Arranging an electrically conductive connecting material (270) on the webs (210) of the grid (200); wherein the optoelectronic semiconductor chips (300) are the connecting material (270) is electrically conductively connected to the grid (200).

8. Method according to one of the preceding claims, wherein the grating (200) is formed with a thickness (205) between 2 pm and 20 pm.

9. Method according to one of the preceding claims, wherein, in addition to the grid (200), similar further grids (200) are formed on the rear side (102) of the substrate (100), wherein the above process steps are also carried out for each further grid (200), wherein the driver chip (500) is provided with similar further driver chips (500) in a wafer assembly (510), wherein the optoelectronic semiconductor chips (300) assigned to one of the further grids (200) are electrically conductively connected to one of the further driver chips (500), wherein the method comprises the following further step: - Separating the optoelectronic component (10) and further similar optoelectronic components (10).

10. Optoelectronic component (10) with a transparent substrate (100) with a rear side (102), wherein a grid (200) with webs (210) made of an electrically conductive material is formed on the rear side (102) of the substrate (100), wherein cells (220) of the grid (200) are formed between the webs (210), wherein a wavelength-converting material (250) is arranged in at least one cell (220) of the grid (200), wherein optoelectronic semiconductor chips (300) are arranged above the cells (220) of the grid (200), wherein each optoelectronic semiconductor chip (300) has a front side (301) and a back side (302), wherein the front sides (301) of the optoelectronic semiconductor chips (300) are oriented towards the back side (102) of the substrate (100), wherein the optoelectronic semiconductor chips (300) are electrically conductively connected to the grid (200), wherein a filling material (400) is arranged on the back side (102) of the substrate (100), wherein the optoelectronic semiconductor chips (300) are embedded in the filling material (400) such that the back sides (302) of the optoelectronic semiconductor chips (300) are not covered by the filling material (400), wherein a driver chip (500) is arranged above the back sides (302) of the optoelectronic semiconductor chips (300), wherein the optoelectronic semiconductor chips (300) are electrically connected to the driver chip (500).

11. Optoelectronic component (10) according to claim 10, wherein the optoelectronic component (10) comprises more than 10,000 optoelectronic semiconductor chips (300), in particular more than 50,000 optoelectronic semiconductor chips (300), in particular more than 100,000 optoelectronic semiconductor chips (300).

12. Optoelectronic component (10) according to one of claims 10 and 11, wherein at least one of the optoelectronic semiconductor chips (300) is designed as a light-emitting diode chip, as a VCSEL chip or as a detector chip.

13. Optoelectronic component (10) according to one of claims 10 to 12, wherein the filling material (400) is a spin-on glass.

14. Optoelectronic component (10) according to one of claims 10 to 13, wherein the filling material (400) is reflective or absorbent.

15. Optoelectronic component (10) according to one of claims 10 to 14, wherein the driver chip (500) is a silicon chip.

16. Optoelectronic component (10) according to one of claims 10 to 15, wherein the substrate (100) comprises a glass.

17. Optoelectronic component (10) according to one of claims 10 to 16, wherein a front side (101) of the substrate (100) has a structuring.

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