Method of repairing an electronic component and electronic component

Abstract

A method of repairing an electronic component (1) comprising electronic semiconductor chips (11) arranged on contact pads (12) connected to conductive paths (2) comprises the following method steps: A conductive paste (14) is arranged next to an area of at least one defective electronic semiconductor chip (12) of the electronic component (1). The conductive paste (14) is structured such that at least one further contact pad (15) connected to at least one conductive path (2) is created. A further electronic semiconductor chip (19) is arranged above the at least one further contact pad (15) and electrically connected to the further contact pad (15).

Description

[0001] METHOD OF REPAIRING AN ELECTRONIC COMPONENT

[0002] AND ELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention refers to a method of repairing an electronic component and an electronic component .

[0005] This patent application claims the priority of the German patent application DE 10 2023 117 215 . 8 , the disclosure content of which is hereby incorporated by reference .

[0006] From the state-of-the-art optoelectronic components are known which comprise a transparent carrier with optoelectronic semiconductor chips arranged on the transparent carrier . Some of the optoelectronic semiconductor chips may become mal functioning with time . For this reason, methods of repairing optoelectronic components are required .

[0007] It is an obj ective of the present invention to provide a method of repairing an electronic component and to provide an electronic component . This obj ective is solved by a method of repairing an electronic component and an electronic component with the features of the independent claims , respectively .

[0008] Advantageous embodiments are speci fied in the dependent claims .

[0009] A method of repairing an electronic component comprises the following method steps : The electronic component is provided, wherein the electronic component comprises a carrier with electronic semiconductor chips arranged at a top side of the carrier . Conductive paths and contact pads connected to the conductive paths are arranged on the top side of the carrier . The electronic semiconductor chips are arranged at least partially above the contact pads and are connected electrically to the contact pads . A conductive paste is arranged at the top side of the carrier next to an area of at least one de- fective electronic semiconductor chip of the electronic component . The conductive paste is structured such that at least one further contact pad connected to at least one conductive path is created . A further electronic semiconductor chip is arranged above the at least one further contact pad and electrically connected to the further contact pad .

[0010] Advantageously, the electronic component is repaired by creating the further contact pad which represents a redundant contact pad next to the area of the at least one defective electronic semiconductor chip and arranging the further electronic semiconductor chip above the further contact pad . In contrast to the defective or mal functioning electronic semiconductor chip, the further semiconductor chip is a functioning or defect- free electronic semiconductor chip .

[0011] Thus , redundant contact pads are created only at positions which need to be repaired . Therefore , there is no need to prepare alternative / redundant further contact pads for all potential positions of electronic semiconductor chips which would require signi ficantly larger conductive areas .

[0012] In an embodiment , the carrier is transparent . The carrier may e . g . , be a transparent and flexible foil . In this case , the method comprises the advantage that the repair process on defective electronic semiconductor chips can be performed without af fecting a transparency of the carrier as only single redundant contact pads can be created instead of creating them for all possible positions of electronic semiconductor chips . A high transparency of the carrier can be maintained due to a very small additional conducting area .

[0013] In an embodiment , the electronic semiconductor chips are designed as optoelectronic semiconductor chips and designed to emit electromagnetic radiation . Before arranging the conductive paste , the optoelectronic semiconductor chips are checked for their functionality by operating the electronic component and identi fying defective optoelectronic semicon- ductor chips which are incapable of an emission of electromagnetic radiation.

[0014] In this case, the electronic component can also be denoted as an optoelectronic component. Advantageously, the identification of defective optoelectronic semiconductor chips is very easy. The optoelectronic semiconductor chips e.g., can be designed as light emitting diodes (LEDs) . The optoelectronic component can be designed as a display comprising pixels, wherein each pixel comprises at least one optoelectronic semiconductor chip, e.g., as an RGB-display. The method advantageously allows to repair single pixels of the display.

[0015] If the electronic semiconductor chips are not designed to emit electromagnetic radiation or not even designed as optoelectronic semiconductor chips, the identification of defective electronic semiconductor chips may e.g., be performed by proving whether proper signals and / or signals at all can be read out from the electronic semiconductor chips and identifying improper signals and / or non-present signals.

[0016] In an embodiment, the at least one defective semiconductor chip is removed. At least one unequipped contact pad remains and the conductive paste is arranged next to the unequipped contact pad. The conductive paste may be arranged prior or after the removing of the at least one defective electronic semiconductor chip. Advantageously, defective electronic semiconductor chips which may damage the electronic component during operation are removed.

[0017] In an embodiment, the at least one defective semiconductor chip is removed by applying a shear force to the defective semiconductor chip. Typically, electronic semiconductor chips are mounted to a carrier by means of soldering with a conductive solder material. If the carrier is transparent e.g., a flexible foil, it tends to have a relatively low melting point compared to the melting point of the solder material. Thus, melting of the solder material in order to remove the defective semiconductor chip may not be possible . I f the defective semiconductor chip is removed by applying a shear force to the defective electronic semiconductor chip no high temperatures a required and the transparent carrier advantageously is not damaged thermally . However, the carrier does not necessarily have to be transparent in order to remove defective electronic semiconductor chips by applying a shear force to them .

[0018] In an embodiment , a solder material arranged between the top surface of the carrier and the at least one defective electronic semiconductor chip is illuminated by a pulsed laser during the removing of the at least one defective electronic semiconductor chip . Advantageously, the pulsed laser is used to generate heat for a short time period and only locally, whereby a sensitive carrier, such as a transparent foil , may be protected from thermal damages during removing of the defective electronic semiconductor chips . Any other suitable light source can be used instead of a laser to melt the solder material .

[0019] In an embodiment , arranging the conductive paste is performed by means of dispensing or j et printing . Advantageously, arranging the conductive paste is performed contactless which means without any equipment necessary for the arrangement of the conductive paste getting in contact with parts of the electronic component . This touchless process can be performed without damaging defect- free areas and electronic semiconductor chips of the electronic component .

[0020] In an embodiment , structuring of the conductive paste is performed by means of photolithography . Advantageously, structuring the conductive paste is also performed by a touchless method without the possibility of damaging the electronic component mechanically .

[0021] In an embodiment , the at least one further contact pad is created by illuminating parts of the conductive paste by a laser in areas of the further contact pad to be created and removing unexposed parts of the conductive paste . In another embodiment , the at least one further contact pad may be created by illuminating parts of the conductive paste by a laser in areas outside of the further contact pad to be created and removing exposed parts of the conductive paste . Again, other suitable light sources than a laser may be used .

[0022] In an embodiment , arranging of the further electronic semiconductor chip is performed such that a further solder material is arranged on the at least one further contact pad, the further electronic semiconductor chip is arranged on the further solder material and the further solder material is illuminated by a pulsed laser or another suitable light source .

[0023] Advantageously, a heat necessary to melt the further solder material is only generated in the area of the further solder material , thereby omitting thermal damages to the carrier which is especially advantageous i f the carrier is transparent and e . g . , designed as a foil . That means the method is applicable for temperature sensitive carriers / substrates .

[0024] In an embodiment , arranging of the further electronic semiconductor chip is performed such that a further solder material is arranged on the at least one further contact pad and the further electronic semiconductor chip is arranged on the solder material . The further solder material comprises a lower melting point than the carrier . In this embodiment , the carrier may advantageously be protected from thermal damages by using appropriate materials for the carrier and the further solder material .

[0025] An electronic component comprises a carrier with a top side and electronic semiconductor chips arranged at the top side of the carrier . Conductive paths and contact pads connected to the conductive paths are arranged at the top side of the carrier . The electronic semiconductor chips are arranged at least partially above the contact pads and are connected electrically to the contact pads . At least one further contact pad is arranged on the top side of the carrier and next to an area of at least one defective electronic semiconductor chip and connected to at least one conductive path . A further electronic semiconductor chip is arranged at least partially above the further contact pad and is electrically connected to the further contact pad .

[0026] In an embodiment , the carrier is transparent and comprises a plastic or glass . In another embodiment , the electronic semiconductor chips are designed as optoelectronic semiconductor chips and arranged in a regular matrix . In another embodiment , the electronic component is designed as a display .

[0027] The above-described properties , features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of the exemplary embodiments which are explained in greater detail in association with the drawings . Here in schematic illustration in each case :

[0028] Fig . 1 : an electronic component in a top view;

[0029] Fig . 2 : an electronic component with a defective electronic semiconductor chip in a top view;

[0030] Fig . 3 : the electronic component without the defective electronic semiconductor chip in a top view;

[0031] Fig . 4 : the electronic component with a conductive paste arranged next to the contact pads of the defective electronic semiconductor chip in a top view;

[0032] Fig . 5 : the electronic component of Fig . 4 with illuminated parts of the conductive paste in a top view; Fig. 6: the electronic component of Fig. 5 where unexposed parts of the conductive paste have been removed in a top view; and

[0033] Fig. 7: the repaired electronic component comprising an intact further electronic semiconductor chip.

[0034] Fig. 1 schematically shows a part of an electronic component 1 in a top view. The electronic component 1 comprises a carrier. The carrier is not shown in Fig. 1. The carrier extends in the drawing plane and comprises a top side. Only elements arranged at the top side of the carrier are shown in Fig. 1.

[0035] In the exemplary embodiment of the electronic component 1 the carrier comprises a transparent material and is at least partially transparent for electromagnetic radiation, particularly transparent for visible light. The carrier is designed as a flexible foil comprising a plastic, e.g., Polyethylene Terephthalate (PET) or Polycarbonate (PC) . PET comprises a melting point of 260°C and can be stable up to 160°C. In contrast, PC comprises a glass transition temperature of 148°C and may be stable up to 135°C.

[0036] Instead of a plastic, the carrier can comprise a glass. In this case, the carrier is transparent but not flexible. However, the carrier does not necessarily have to be transparent. Alternatively, the carrier may comprise another material. For example, the carrier may comprise silicon.

[0037] The electronic component 1 comprises conductive paths 2 arranged on the top side of the carrier. In Fig. 1 only a part of the electronic component 1 is shown comprising a first conductive path 3 and multiple second conductive paths 4. The second conductive paths 4 are parallel to the first conductive path 3. However, the part of the electronic component 1 shown in Fig. 1 only represent one row of conductive paths 2 partially. The electronic component 1 can comprise multiple first and second conductive paths 3 , 4 . The electronic component 1 can also comprise another arrangement of conductive paths 2 which can be signi ficantly more complex than the arrangement of conductive paths shown in Fig . 1 .

[0038] Furthermore , electrical contact pads 5 are arranged on the top side of the carrier . The contact pads 5 are connected to the conductive paths 2 . In the exemplary embodiment of Fig . 1 , the electronic component 1 comprises first contact pads 6 and second contact pads 7 . Each first contact pad 6 is connected to the first conductive path 3 via a first interconnective path 8 , 9 . The interconnective paths 8 are also arranged on the top side of the carrier . Each second contact pad 7 is connected to a second conductive path 4 via a second interconnective path 10 , respectively . The interconnective paths 8 exemplarily extend perpendicular to the conductive paths 2 .

[0039] The contact pads 5 , 6 , 7 , the conductive paths 2 , 3 , 4 and the interconnective paths 8 , 9 , 10 are arranged laterally next to each other on the top side of the carrier . The conductive paths 2 , the contact pads 5 and the interconnective paths 8 comprise copper and a thin film of copper ( I ) nitride arranged on top of the copper . Copper ( I ) nitride is a compound which is stable in air and at room temperature and prevents oxidation of the copper . The conductive paths 2 , the contact pads 5 and the interconnective paths 8 may also comprise another metallic and electrically conductive material . This material does not necessarily have to be coated with a thin film .

[0040] The electronic component 1 furthermore comprises electronic semiconductor chips 11 arranged at the top side of the carrier . The electronic semiconductor chips 11 are arranged at least partially above the contact pads 5 and are connected electrically to the contact pads 5 . In the embodiment of the electronic component 1 , each electronic semiconductor chip 11 is arranged partially above a first contact pad 6 and par- tially arranged above a second contact pad 8 , respectively and electrically connected to the first and the second contact pad 6 , 7 . Deviating from the example of Fig . 1 , each electronic semiconductor chip 11 can be arranged only above one contact pad 5 . Alternatively, more than two contact pads may be intended for each electronic semiconductor chip 11 .

[0041] Exemplarily, the electronic semiconductor chips 11 are designed as optoelectronic semiconductor chips 11 , in particular as light emitting diodes ( LEDs ) which are designed to emit electromagnetic radiation . In this case , the electronic component 1 can be denoted as an optoelectronic component 1 . The optoelectronic semiconductor chips 11 comprise a mounting face and an emission face . The optoelectronic semiconductor chips 11 are mounted with their mounting faces towards the top side of the carrier while the emission face faces away from the top side of the carrier .

[0042] The optoelectronic component 1 can be designed as a display . In this case , the optoelectronic component 1 comprises multiple columns and rows of pixels . Each pixel comprises at least one optoelectronic semiconductor chip 11 . In other words , the optoelectronic semiconductor chips 11 are arranged in a regular matrix .

[0043] In another embodiment , the optoelectronic semiconductor chips 11 are designed as photo diodes . In this case , the optoelectronic semiconductor chips 11 are designed to detect electromagnetic radiation . In another embodiment , the optoelectronic semiconductor chips 11 are designed as laser diodes . In this case , the optoelectronic component 1 comprises a laser-array . The laser diodes may be designed as surface emitters or as edge emitters . It is also possible that the optoelectronic component 1 comprises optoelectronic semiconductor chips 11 , wherein a part of the optoelectronic semiconductor chips 11 is designed as photo diodes and another part of the optoelectronic semiconductor chips 11 is designed as LEDs or laser diodes . However, the electronic semiconductor chips 11 don' t have to be designed as optoelectronic semiconductor chips 11 . Alternatively, pure electronic semiconductor chips 11 may be provided which are not capable of generating or detecting light .

[0044] In the following description, only the optoelectronic component 1 comprising optoelectronic semiconductor chips 11 is considered to describe a method of repairing the optoelectronic component 1 . However, the method can also be applied to an electronic component 1 without optoelectronic semiconductor chips 11 but pure electronic semiconductor chips 11 .

[0045] Fig . 2 to 7 schematically show method steps of a method of repairing the optoelectronic component 1 of Fig . 1 . In each case , a top view is shown while the carrier is not shown, respectively . The reference numerals of Fig . 1 are maintained in the following description .

[0046] In a first method step, the optoelectronic component 1 according to Fig . 1 is provided . The optoelectronic semiconductor chips 11 are subj ect to aging processes or can be damaged mechanically . I f an optoelectronic semiconductor chip 11 or multiple optoelectronic semiconductor chips 11 are defective , they can ' t be j ust exchanged using their prior position and contact pads 5 because these could be damaged as well whereby an electrical connection between the optoelectronic semiconductor chips 11 and the contact pads 5 can' t be ensured .

[0047] On the other hand, providing redundant contact pads for all possible positions of optoelectronic semiconductor chips 11 to enable an arrangement of defective- free optoelectronic semiconductor chips 11 above the redundant contact pads comprises the problem, that a transparency of the carrier would be influenced as a signi ficantly larger conductive area of contact pads 5 and interconnective paths 8 would be required . By using the method of repairing the optoelectronic component 1 these problems can be overcome . Fig . 2 shows the optoelectronic component 1 after the optoelectronic semiconductor chips 11 have been checked for their functionality within an optional method step . This can be done by operating the optoelectronic component 1 and identifying defective optoelectronic semiconductor chips 11 which are incapable of an emission of electromagnetic radiation . However, the knowledge about defective optoelectronic semiconductor chips 11 and their positions e . g . , might be present and this optional method step of checking for the functionality of the optoelectronic semiconductor chips 11 can be omitted . Fig . 2 exemplarily shows that only one defective optoelectronic semiconductor chip 12 is not capable of emitting light anymore but the optoelectronic component 1 may also comprise multiple defective optoelectronic semiconductor chips 12 .

[0048] Fig . 3 shows the optoelectronic component 1 after the at least one defective optoelectronic semiconductor chip 11 has been removed . Thus , at least one unequipped contact pad 13 remains . In the exemplary embodiment of the optoelectronic component 1 in total two unequipped contact pads 13 remain as the defective optoelectronic semiconductor chip 12 was arranged above two contact pads 5 .

[0049] The removing may be performed by applying a shear force to the defective semiconductor chip 12 . The optoelectronic semiconductor chips 11 are fastened to the contact pads 5 e . g . , by means of a solder material which is not shown in the drawings . The solder material is arranged between the contact pads 5 and the optoelectronic semiconductor chips 11 . One possibility to remove a defective optoelectronic semiconductor chip 12 can consist in the approach of melting the solder material . As the carrier is designed as a foil comprising a plastic this could damage the carrier, depending on the melting point of the solder . By applying the shear force in order to remove the defective optoelectronic semiconductor chip 12 thermal damages to the carrier can be omitted . Optionally, the solder material arranged between the contact pad 5 and the at least one defective optoelectronic semiconductor chip 12 is illuminated by a pulsed laser during the removing of the defective optoelectronic semiconductor chip 12 . Within this step heat can be generated locally and only in areas of the solder material to be molten, whereby the defective optoelectronic semiconductor chip 12 can be removed more easily and without thermally damaging the carrier . Other methods to remove the defective optoelectronic semiconductor chip 12 can also be used . The removing of the defective optoelectronic semiconductor chip 12 can also be omitted .

[0050] Fig . 4 shows the optoelectronic component 1 after arranging a conductive paste 14 at the top side of the carrier and next to the unequipped contact pad 13 . In case the defective optoelectronic semiconductor chip 12 has not been removed, the conductive paste 14 is arranged next to an area of the at least one defective electronic semiconductor chip 12 . Generally, the conductive paste 14 is arranged laterally next to at least one contact pad 5 on the top side of the carrier in order to create a redundant structure . In the exemplary embodiment of Fig . 4 , the conductive paste 14 has been arranged laterally next to two contact pads 5 .

[0051] The conductive paste 14 can be arranged by dispensing or j et printing . Thus , the conductive paste is arranged contactless / touchless , whereby defective- free optoelectronic semiconductor chips 11 are protected from mechanical damages . The conductive paste 14 is designed as a photoresist in one embodiment . It is structureable by means of photolithography . In this case , it can also be denoted as a sinter paste which can be photonically sintered . The conductive paste 14 can also comprise other properties and can be structureable by any other convenient method . However, photolithography provides the possibility to structure the conductive paste 14 touchless and without damaging the intact optoelectronic semiconductor chips 11 . Fig . 5 shows the optoelectronic component 1 after structuring the conductive paste 14 by photolithography . Any other suitable method could be used instead of photolithography, preferably touchless methods . The conductive paste 14 has been structured such that at least one further contact pad 15 has been created . In the exemplary embodiment of the method in total two further contact pads 15 have been created because every semiconductor chip 11 has to be connected electrically with two contact pads 5 .

[0052] The further contact pads 15 are connected to the conductive paths 2 by further interconnective paths 16 . One further contact pad 15 is connected to the first conductive path 3 via a further interconnective path 16 . Another further contact pad 15 is connected to a second conductive path 4 via another further interconnective path 16 . The connection of the further contact pads 15 to the conductive paths 2 electrically corresponds to a connection of the unequipped contact pads 13 to the conductive paths 2 . The interconnective paths 16 are also created by photolithography of the conductive paste 14 . The at least one further contact pad 15 and the at least one further interconnective path 16 are arranged laterally next to each other and laterally next to the contact pads 5 , 6 , 7 , the conductive paths 2 , 3 , 4 and the interconnective paths 8 , 9 , 10 on the top side of the carrier .

[0053] As an example , Fig . 5 shows that the further contact pads 15 have been created by illuminating parts of the conductive paste 14 by a laser or any other suitable light source in areas of the further contact pads 15 and the further interconnective paths 16 to be created . Thus , the conductive paste 14 is sintered in the illuminated areas .

[0054] Fig . 6 shows the optoelectronic component 1 after removing the unexposed parts of the conductive paste 14 that means after removing parts of the conductive paste 14 which have not been illuminated . In this case , the conductive paste 14 is designed as a negative photoresist because the unexposed parts are removed to create the further contact pads 15 and the further interconnective paths 16 connecting the further contact pads 15 to the conductive pathways 2 . In another embedment a conductive paste 14 may be used which is designed as a positive photoresist which means that illuminated parts are removed while unexposed parts remain as the further contact pads 15 and the further interconnective paths 16 .

[0055] The remaining further contact pads 15 and further interconnective paths 16 represent a redundant structure 17 in the sense that it is redundant to the unequipped contact pads 13 and their interconnective paths 8 . By creating this redundant structure 17 a transparency of the carrier is influenced only locally . In contrast , providing redundant structures for all possible positions of optoelectronic semiconductor chips 11 would decrease the transparency signi ficantly .

[0056] Fig . 7 shows the repaired optoelectronic component 18 after arranging a further electronic semiconductor 19 chip above the further contact pads 15 . In contrast to the defective optoelectronic semiconductor chip 12 , the further electronic semiconductor chip 19 is defect- free .

[0057] Arranging of the further electronic semiconductor chip 19 may be performed such that a further solder material is arranged on the at least one further contact pad, the further electronic semiconductor chip is arranged on the solder material and the solder material is illuminated by a pulsed laser . A heat necessary in order to melt the further solder material is thus only deposited in the area of the further solder material , thus protecting the carrier from thermal damages .

[0058] The further solder material may comprise a lower melting point than the carrier, whereby the carrier can be protected from thermal damages . E . g . , the further solder material can comprise a melting point of 138 ° C which is compatible with PET and PC carriers . The invention has been illustrated and described in detail with the aid of the preferred exemplary embodiments . Nevertheless , the invention is not restricted to the examples dis- closed . Rather, other variants may be derived therefrom by a person skilled in the art without departing from the protective scope of the invention .

[0059] REFERENCE NUMERALS

[0060] 1 electronic / optoelectronic component

[0061] 2 conductive paths

[0062] 3 first conductive path

[0063] 4 second conductive paths

[0064] 5 contact pads

[0065] 6 first contact pads

[0066] 7 second contact pads

[0067] 8 interconnective paths

[0068] 9 first interconnective paths

[0069] 10 second interconnective paths

[0070] 11 electronic / optoelectronic semiconductor chip

[0071] 12 defective electronic / optoelectronic semiconductor chip

[0072] 13 unequipped contact pads

[0073] 14 conductive paste

[0074] 15 further contact pads

[0075] 16 further interconnective paths

[0076] 17 redundant structure

[0077] 18 repaired electronic / optoelectronic component

[0078] 19 further electronic / optoelectronic semiconductor chip

Claims

PATENT CLAIMS1. Method of repairing an electronic component (1) comprising the following method steps:- providing the electronic component (1) , wherein the electronic component (1) comprises a carrier with electronic semiconductor chips (11) arranged at a top side of the carrier, wherein conductive paths (2) and contact pads (5) connected to the conductive paths (2) are arranged on the top side of the carrier, wherein the electronic semiconductor chips (11) are arranged at least partially above the contact pads (5) and are connected electrically to the contact pads (5) ,- arranging a conductive paste (14) at the top side of the carrier next to an area of at least one defective electronic semiconductor chip (12) of the electronic component (1) ,- structuring the conductive paste (14) such that at least one further contact pad (15) connected to at least one conductive path (2) is created,- arranging a further electronic semiconductor chip (19) above the at least one further contact pad (15) and electrically connecting the further electronic semiconductor chip (19) to the further contact pad (15) .

2. The method according to claim 1, wherein the electronic semiconductor chips (11) are designed as optoelectronic semiconductor chips (11) and designed to emit electromagnetic radiation, wherein before arranging the conductive paste (14) the optoelectronic semiconductor chips are checked for their functionality by operating the electronic component (1) and identifying defective optoelectronic semiconductor chips (12) which are incapable of an emission of electromagnetic radiation.

3. The method according to claim 1 or 2, wherein the at least one defective semiconductor chip (12) is removed,wherein at least one unequipped contact pad (13) remains and the conductive paste (14) is arranged next to the unequipped contact pad ( 14 ) .

4. The method according to claim 3, wherein the at least one defective semiconductor chip (12) is removed by applying a shear force to the defective semiconductor chip (12) .

5. The method according to claim 4, wherein a solder material arranged between the top surface of the carrier and the at least one defective electronic semiconductor chip (12) is illuminated by a pulsed laser during the removing of the at least one defective electronic semiconductor chip (12) .

6. The method according to one of the previous claims, wherein the carrier is transparent.

7. The method according to one of the previous claims, wherein arranging the conductive paste (14) is performed by means of dispensing or jet printing.

8. The method according to one of the previous claims, wherein structuring of the conductive paste (14) is performed by means of photolithography.

9. The method according to claim 8, wherein the at least one further contact pad (15) is created by illuminating parts of the conductive paste (14) by a laser in areas of the further contact pad (15) to be created and removing unexposed parts of the conductive paste (14) .

10. The method according to one of the previous claims, wherein arranging of the further electronic semiconductor chip (19) is performed such that a further solder material is arranged on the at least one further contact pad (15) , the further electronic semiconductor chip (19) is arranged on thefurther solder material and the further solder material is illuminated by a pulsed laser.

11. The method according to one of the previous claims 1 to 9, wherein arranging of the further electronic semiconductor chip (19) is performed such that a further solder material is arranged on the at least one further contact pad (15) and the further electronic semiconductor chip (19) is arranged on the further solder material, wherein the further solder material comprises a lower melting point than the carrier.

12. Electronic component (18) comprising a carrier with a top side and electronic semiconductor chips (11) arranged at the top side of the carrier, wherein conductive paths (2) and contact pads (5) connected to the conductive paths (2) are arranged at the top side of the carrier, wherein the electronic semiconductor chips (11) are arranged at least partially above the contact pads (5) and are connected electrically to the contact pads (5) , wherein at least one further contact pad (15) is arranged on the top side of the carrier and next to an area of at least one defective electronic semiconductor chip (12) and connected to at least one conductive path (2) , wherein a further electronic semiconductor chip (19) is arranged at least partially above the further contact pad (15) and electrically connected to the further contact pad (15) .

13. The electronic component (18) according to claim 12, wherein the carrier is transparent and comprises a plastic or glass .

14. The electronic component (18) according to claim 12 or 13, wherein the electronic semiconductor chips (11) are designedas optoelectronic semiconductor chips and arranged in a regular matrix.

15. The electronic component (18) according to claim 14, wherein the electronic component (18) is designed as a display .

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