Method and system for optimizing source, mask and wavefront based on diffraction pattern to reduce m3d fading

EP4767120A1Pending Publication Date: 2026-07-01ASML NETHERLANDS BV
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Patent Information

Application Number
EP2024751475
Authority / Receiving Office
EP · EP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-03-20
Filing Date
2024-07-31
Publication Date
2026-07-01

AI Technical Summary

Technical Problem

Conventional techniques fail to effectively reduce mask 3D fading effects in lithography, which lead to imaging contrast loss due to phase modulation caused by oblique incident radiation and 3D features on the mask.

Method used

A method that involves determining a diffraction pattern of a target pattern, partitioning it into zeroth and first order diffraction zones, and determining a wavefront target based on these zones and a desired phase shift between the zeroth and first order diffractions. This wavefront target is then optimized and co-optimized with source or mask parameters to reduce M3D fading.

Benefits of technology

The method significantly reduces mask 3D induced contrast loss by optimizing the wavefront target and adjusting source or mask parameters, thereby improving imaging performance and reducing manufacturing costs.

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Abstract

Described is a method and system for reducing a mask three-dimensional (M3D) induced contrast loss in a lithography process. A diffraction pattern of a target pattern is determined based on a zeroth and first order diffraction of the target pattern. The diffraction pattern is discretized and partitioned into zeroth order and first order diffraction zones to create partitioned zones. A wavefront target is determined based on the partitioned zones and a desired phase shift between the zeroth order diffraction and the first order diffraction.
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