INTEGRATED CIRCUIT COMPRISING A NON-VOLATILE MEMORY AND ASSOCIATED MANUFACTURING METHOD

Abstract

INTEGRATED CIRCUIT COMPRISING A NON-VOLATILE MEMORY AND ASSOCIATED MANUFACTURING METHOD One aspect of the invention relates to an integrated circuit (1) comprising: a copper via (42); and a non-volatile memory (5), electrically connected to the copper via (42), the integrated circuit is remarkable in that it comprises a copper diffusion barrier (6), based on Ta, Ti or Co, extending as a counter layer on the copper via, the non-volatile memory being connected to the via via the diffusion barrier. Figure to be published with the abstract: Figure 1B

Description

Title of the invention: INTEGRATED CIRCUIT COMPRISING A NON-VOLATILE MEMORY AND ASSOCIATED MANUFACTURING METHOD TECHNICAL FIELD OF THE INVENTION

[0001] The technical field of the invention relates to integrated circuits comprising non-volatile memories and more particularly implementing a phase change material, called PCM memory for "Phase Change Material" in English. The technical field relates, for example, to integrated circuits that can be implemented in the automotive field. TECHNOLOGICAL BACKGROUND OF THE INVENTION

[0002] A non-volatile memory implementing a phase change material (called “PCM” for “Phase Change Material” in English) can be characterized by its resistance, which can take at least two distinct values. Each resistance value corresponds to a distinct state that the memory can take, thus making it possible to store binary information. A high resistance value corresponds to a state called “RESET”, generally associated with a low state or “0”. A low resistance value corresponds to a state called “SET”, generally associated with a high state or “1”.

[0003] Programming the memory from one state to another, or from one resistance value to another, can be carried out following the steps called “RESET” programming or “SET” programming.

[0004] The “RESET” programming is based on the melting of all or part of the volume of the phase change material (for example a chalcogenide) which is reached by an electrical pulse with a sufficiently high current. The current is sized to allow a melting temperature of the PCM material to be reached by Joule effect. Sudden cooling, obtained by a rapid reduction of the applied current, allows the melted part of the PCM material to be left in an amorphous state. This amorphous arrangement has a high resistance, corresponding to the RESET state.

[0005] “SET” programming is based on obtaining a crystalline state of the PCM material. This operation consists of applying an electrical pulse which produces, by Joule effect, a partial or total melting of the PCM material. A gradual reduction of the applied current makes it possible to recrystallize the PCM material. This crystalline state, having a lower resistance, corresponds to the SET state.

[0006] Information retention can be characterized by the duration of maintenance of the RESET state as a function of time and temperature. Specifications in terms of information retention can be strict for embedded applications. For example, a standard called "JEDEC", applied to automobiles, imposes a stability of the RESET state of two years at a temperature of 150°C.

[0007] The document [“Optimization Metrics for Phase Change Memory (PCM) Cell Architectures”, M. Boniardi & al., IEDM14 IEEE 2014] discloses a non-volatile memory comprising a layer of PCM material and a heater connected in series. The heater is notably of the “WALL” type, i.e. having a fin shape, extending perpendicular to the plane of the layers. Thus, the contact between the PCM layer and the heater is of small dimension, making it possible to achieve high current densities at the contact point. The temperatures accessible with this type of heater make it possible to improve the programming efficiency of the PCM layer. The document also discloses that the PCM layer / heater assembly is connected in series between two metal electrodes, in this case tungsten.The application of an electric potential to the terminals of the tungsten electrodes causes the circulation of an electric current which, by Joule effect in the resistive heater, causes localized heating of the PCM layer.

[0008] The document [“High Density Embedded PCM in 28 nm FDSOI Tecnology for Automotive Micro-Controller Applications”, F. Arnaud & al., IEDM20 IEEE 2020] discloses a non-volatile memory integrated in an integrated circuit, comprising a PCM layer shared between several heating elements, called WALL-type “heaters”. Each heating element is connected in series with an electrode, distinct for each heating element, and the PCM layer. This arrangement of the memories makes it possible to bring them closer to the “end-of-line functional block” of the integrated circuit, also called “Secondary Manufacturing Level” or “BEOL” for “Back-end of Line” in English, by arranging them under a first routing level.In this way, non-volatile memories can be separated from the "start-of-line functional block" of the integrated circuit, also called "Primary Manufacturing Level" or "FEOL" for "Front-end of Line" in English, in which logic circuits, for example of the "CMOS" type (for "Complementary Metal Oxide Semiconductor") are integrated.

[0009] The electrical connection between the different levels of the integrated circuit, i.e. between the logic circuits of the FEOL and the memories of the different levels of the BEOL, is achieved by means of routing levels comprising copper vias, crossing the different levels of the circuit. The integration of PCM layers in the vicinity of copper vias is however problematic. Indeed, copper is an element which can degrade PCM layers. In addition, copper diffusion can be assisted by temperature. For example, memory manufacturing or current flow in heating elements assists copper diffusion and can cause degradation of PCM layers. There is therefore a need to integrate a PCM layer at the BEOL level while avoiding the pitfalls associated with copper diffusion.

[0010] In this regard, the document [“18 nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Application”, D. Min & al., IEDM21 IEEE 2021] also discloses a non-volatile memory integrated in an integrated circuit, comprising a PCM layer shared between several WALL-type heating elements. Each heating element is, here, connected in series between a tungsten contact called a buffer layer or “plug” in English and the PCM layer.

[0011] However, the formation of the buffer layer involves several manufacturing steps. In addition, its significant thickness poses integration problems in the BEOL where the thickness between the different levels, within an integrated circuit, can be constrained. Summary of the invention

[0012] There is a need to provide an integrated circuit aimed at solving, at least partially, the aforementioned problems. For this, the invention provides a means of blocking the diffusion of copper between a routing level and a memory which may be impacted by the diffusion of copper, having a small thickness and the manufacture of which is simple.

[0013] The invention relates more particularly to an integrated circuit comprising: • a substrate having a flat surface; • at least one via or line, made of copper, extending into the substrate and opening onto the flat surface of the substrate, exposing a surface called the “contact surface”; • at least one non-volatile memory comprising: • a first electrode, called a “heating element”; • a second electrode, called the “upper electrode”; and • a first active layer between the heating element and the upper electrode, electrically connected to the upper electrode and to the heating element, the integrated circuit being remarkable in that it comprises at least one copper diffusion barrier based on tantalum or titanium or cobalt or their alloys, said at least one diffusion barrier extending in the form of a layer against at least a part of the contact surface of said at least one via or of said at least a line, the heating element of said at least one non-volatile memory being in contact with the first active layer of said at least one non-volatile memory and in contact with said at least one diffusion barrier.

[0014] By flat surface is meant a surface extending in a plane (for example a horizontal plane).

[0015] By via is meant a conductive track extending in the substrate, for example in a direction perpendicular to the surface of the substrate. By line is meant a conductive track extending in the substrate, for example in a direction parallel to the surface of the substrate.

[0016] By "active layer" is meant a layer whose resistance can vary, reversibly or irreversibly, following the flow of a current or the application of a heat treatment. Preferably, the first active layer can change resistance between at least two distinct values, in a bistable manner, making it possible to store information.

[0017] By non-volatile memory, we preferably mean a phase change memory.

[0018] By "parallel" and "perpendicular" we mean respectively parallel to within 20°, or even parallel to within 10°, and perpendicular to within 20°, or even perpendicular to within 10°.

[0019] By “based on an element” is preferably meant comprising at least 50% of this element.

[0020] Each barrier layer prevents the diffusion of copper to the memory and / or to the heating element during the manufacture of the integrated circuit or during its use. This layer replaces the use of a tungsten buffer layer.

[0021] The diffusion barrier makes it possible to manufacture the non-volatile memory at the BEOL of the integrated circuit and therefore to distance the latter from the logic circuits of the FEOL of the integrated circuit. This arrangement makes it possible to prevent the non-volatile memories from being able to disrupt the operation of the logic circuits of the FEOL.

[0022] In addition, Ta, Ti, Co-based materials are sufficiently effective to block copper diffusion while allowing a diffusion barrier to be produced in the form of a layer having a small thickness. Thus, unlike a tungsten buffer layer, which has a significant thickness, the diffusion barriers according to the invention make it possible to significantly reduce the total height of each non-volatile memory. Ta, Ti or Co-based barriers offer easier integration of non-volatile memories. They offer the possibility of using the resulting integrated circuit at a higher frequency. Indeed, the height between the different levels of the BEOL can be constrained by the height of the non-volatile memories. Reducing the height of the memories makes it possible to reduce the thickness between the different levels of the BEOL. The length of the copper vias connecting these levels can then also be reduced. This reduces the resistance of each via and the capacitive coupling between the vias, allowing the circuit to be used at higher frequencies.

[0023] The diffusion barriers can be implemented at different levels of the integrated circuit, for example closest to the FEOL.

[0024] Advantageously, for each non-volatile memory, each heating element comprises a portion, called a “fin”, extending perpendicular to the surface of the substrate and comprising a first end, in contact with the first active layer of said non-volatile memory, and a second end, in contact with said at least one diffusion barrier.

[0025] Advantageously, each diffusion barrier extends against the entire contact surface of a via or of said at least one copper line. Thus, the blocking of diffusion is improved. This also makes it possible to avoid the need for a complementary solution to reduce the diffusion of copper from a portion of the contact surface of each via or line which would not be covered by the diffusion barrier. According to a development, each diffusion barrier extends beyond said contact surface by also extending onto the flat surface of the substrate.

[0026] Advantageously, each heating element comprises a material from among: TiN, TiC, TiSiN, TiSiCN, TiWN, TaN and TaCN.

[0027] Advantageously, the first active layer of each volatile memory comprises a chalcogenide material. Thus the first layer is programmable.

[0028] According to one embodiment, the integrated circuit comprises: • a plurality of non-volatile memories; and • a plurality of diffusion barriers, distant from each other; • a plurality of copper vias or copper lines, each via or line extending into the substrate and opening onto the surface of the substrate exposing a contact surface, said contact surfaces being arranged in a matrix, each diffusion barrier extending as a layer against at least a portion of the contact surface of one of the vias or one of the lines, the heating element of each non-volatile memory being connected to one of the diffusion barriers.

[0029] Advantageously, the first active layers of the different non-volatile memories are laterally isolated from each other. By "laterally isolated" is meant that the first active layers are without direct contact.

[0030] According to an alternative embodiment, the same first active layer is continuous and common to at least two non-volatile memories, said same first active layer being in contact with each heating element of said at least two non-volatile memories. The first active layers can thus be shared. between several non-volatile memories. This makes it possible, for example, to reduce the number of operations to create the first active layers, in particular the number of engravings.

[0031] According to one embodiment, the integrated circuit comprises a selection element associated with said at least one non-volatile memory. It allows addressing of each memory. This configuration makes it possible to have a selector in the BEOL, with each memory. This arrangement makes it possible to dispense with the use of a logic component, for example a CMOS transistor of the FEOL as a selector. This arrangement thus makes it possible to dispense with the technology implemented in the FEOL and makes each memory portable.

[0032] Advantageously, the selection element is an ovonic threshold switch called “OTS”, preferably comprising an alloy based on Ge, Sb, Se, As, Si, Te, S or Al, which can be doped, such as alloys of GeSbSe, GeSe, AsSeSiGe, AsSe, SbSe, SiSe, AsTe, SiGeSe or AlTe.

[0033] Advantageously, the integrated circuit is free of tungsten between said at least one via or said at least one line and the heating element of said at least one non-volatile memory.

[0034] The invention also relates to a method of manufacturing an integrated circuit comprising the steps of: • provide : • a substrate having a flat surface; and • at least one via or at least one line, made of copper, extending into the substrate and opening onto the flat surface of the substrate, exposing a surface called the “contact surface”, • forming at least one copper diffusion barrier based on tantalum or titanium or cobalt or their alloys, such that said at least one diffusion barrier extends in the form of a layer against at least part of the contact surface of said at least one via or of said at least one line; • form at least one non-volatile memory comprising: • a first electrode, called a “heating element”, being in contact with said at least one diffusion barrier; • a second electrode, called the “upper electrode”; and • a first active layer between the heating element and the upper electrode, electrically connected to the upper electrode and in contact with the heating element.

[0035] The formation of a buffer, for example in tungsten, requires five additional steps, including in particular a chemical-physical polishing step. The formation of diffusion barriers requires at most two steps (e.g., deposition of a layer and its delimitation). The number and complexity of the steps are reduced.

[0036] According to one embodiment, the fabrication of each diffusion barrier comprises the step of growing said diffusion barrier by selective deposition of tantalum or titanium or cobalt or their alloys on the contact surface of a copper via or a copper line.

[0037] Thus, growth by selective deposition makes it possible to localize the growth of diffusion barriers at the level of the contact surface of the vias or copper lines.

[0038] According to an implementation variant, the manufacture of the diffusion barrier comprises the steps of: • deposit a layer based on tantalum or titanium or cobalt or their alloys, called a “barrier material layer”, on the flat surface of the substrate and the contact surface of said at least one via or said at least one copper line; • etch the barrier material layer through at least one etching mask, stopping on the substrate, so as to form at least one diffusion barrier.

[0039] Advantageously, to form a plurality of diffusion barriers, the etching of the barrier material layer is carried out so as to form diffusion barriers separated from each other.

[0040] Advantageously, the etching of the layer of barrier material through said at least one mask is carried out so that each diffusion barrier extends in the form of a layer against at least a portion of the contact surface of said at least one via or of said at least one line.

[0041] Advantageously, the formation of each non-volatile memory comprises the steps of: • forming, before the step of etching the barrier material layer, a first dielectric layer extending over the barrier material layer, leaving at least a portion of the barrier material layer free, said first dielectric layer comprising at least one flank extending perpendicular to the flat surface of the substrate, directly above the contact surface of said at least one via or of said at least one line; • depositing a resistive layer in a conformal manner on the first dielectric layer and on said at least one free portion of the barrier material layer; • etch the resistive layer anisotropically, perpendicular to the flat surface of the substrate, with a stop on the barrier material layer, so as to leave a portion of the resistive layer, called a “fin”, extending perpendicular to the flat surface of the substrate, from the barrier material layer, against the side of the first dielectric layer and directly above the contact surface of said at least one via or of said at least one line; • etching the barrier material layer anisotropically through a first etching mask, stopping on the substrate, the first etching mask comprising the first dielectric layer and the fin; • etching the fin and the barrier material layer anisotropically through a second etching mask, stopping on the substrate, so as to delimit each diffusion barrier from the barrier material layer, at the level of a part of the contact surface of said at least one via or of said at least one line, and so as to delimit each first electrode, called “heating element”, from the fin, in the extension of a diffusion barrier.

[0042] The conformal deposition of the resistive layer on the first dielectric layer makes it possible to form a resistive layer having portions parallel to the substrate and a portion perpendicular to the substrate. The parallel portions of the resistive layer are removed by etching. The perpendicular portion of the resistive layer is retained because it has a thickness, measured perpendicular to the substrate, which is much greater than the parallel portions. This perpendicular portion thus forms the fin.

[0043] The first etching mask and the fin extending against the flank of the first dielectric layer then form a first etching mask protecting a portion of the barrier material layer from etching. Thus, the fin is at least in contact with the portion of the barrier material layer that it protects from etching.

[0044] Etching through the second mask makes it possible to delimit each diffusion barrier and each heating element in the extension of a via or a line.

[0045] Advantageously, the formation of each non-volatile memory comprises the steps of: • depositing, before etching the fin and the barrier material layer through the second etching mask, a first active layer extending parallel to the flat surface of the substrate and in contact with each fin; • etch the first active layer through the second etching mask so as to delimit the first active layer in the extension of a heating element and a diffusion barrier.

[0046] Each non-volatile memory thus comprises a first active layer aligned with a heating element. The coupling between the first active layer and the element heating is therefore controlled and identical for different non-volatile memories. This alignment also makes it possible to eliminate spatial drift due to several etching steps carried out at different levels. In addition, the non-volatile memory is also aligned with a diffusion barrier, ensuring effective protection of the first active layer against copper.

[0047] Advantageously, when the method forms two volatile memories, the second etching mask is configured so that the first active layers of the two non-volatile memories form a single layer.

[0048] The first two active layers form, for example, an island or a line.

[0049] Advantageously, the formation of each non-volatile memory comprises: • depositing, before etching the first active layer through the second etching mask, a first metal layer on the first active layer; • etch the first metal layer through the second etching mask so as to delimit each upper electrode, in the extension of a heating element and a diffusion barrier.

[0050] Advantageously, the method also comprises the step of forming a selection element associated with each non-volatile memory, in contact with the upper electrode of each non-volatile memory. BRIEF DESCRIPTION OF THE FIGURES

[0051] The invention and its various applications will be better understood upon reading the following description and examining the accompanying figures. The figures are presented for information purposes only and in no way limit the invention.

[0052] [Fig.lA], [Fig.lB], [Fig.2] and [Fig.3] show first, second and third embodiments of an integrated circuit according to the invention. [Fig.lB] corresponds to an enlargement of [Fig.lA].

[0053] [Fig.4], [Fig.5], [Fig.6], [Fig.7], [Fig.8], [Fig.9], [Fig.10], [Fig.ll], [Fig.12], [Fig.13], [Fig.14], [Fig.15], [Fig.16], [Fig.17] and [Fig.18] present a first implementation of a manufacturing method according to the invention, making it possible to obtain the integrated circuit of [Fig.1A] and [Fig.1B].

[0054] [Fig.19], [Fig.20], [Fig.21] and [Fig.22] show a second implementation of the manufacturing method according to the invention, making it possible to obtain the integrated circuit of [Fig.3].

[0055] [Fig.23], [Fig.24] and [Fig.25] show a third implementation of the manufacturing method according to the invention, making it possible to obtain the integrated circuit of [Fig.2].

[0056] Unless otherwise specified, the same element appearing in different figures has a single reference. DETAILED DESCRIPTION

[0057] Figures 1A and 1B show an integrated circuit 1 according to a first embodiment of the invention. [Fig. 1B] corresponds to an enlargement of [Fig. 1A] represented by a dotted rectangle. The circuit 1 comprises two functional blocks 2, 3, also called functional levels, which are the FEOL 2 (also simply called “front-end” or “FEND”) and the BEOL 3 (also simply called “back-end” in English). This type of integrated circuit arrangement or architecture is known to those skilled in the art.

[0058] The integrated circuit 1 comprises at least one non-volatile memory 5, 5'. In the embodiment of FIGS. 1A and 1B, it comprises two groups of two non-volatile memories 5, 5'. The memories 5, 5' are arranged in the back-end 3 of the circuit 1.

[0059] They are electrically connected to the front-end 2 of the circuit 1 via at least one copper routing level 4, in this case a plurality of levels 4 in this embodiment. Thus, the memories 5, 5' can be connected to logic components of the front-end 2 playing for example the role of selector of the different memories 5, 5'.

[0060] Alternatively, the memories could also be located directly on the front-end 2 (in a level that can be called the "metal level") and directly in contact with the logic components of the front-end 2.

[0061] In the illustrated example, each routing level 4 of figures 1A and 1B comprises a substrate 41 and several vias 42. The substrate 41 has two planar surfaces 410, 411, opposite one another, called “upper surface” and “lower surface”. They extend in this case in a plane {X; Y}. Each via 42 of a routing level 4 passes through the substrate 41 from one side to the other, joining the lower surface 411 of the substrate 41 to the upper surface 410 of the substrate 4L. More particularly, the vias 42 open out from each planar surface 410, 411, exposing a surface 420 called “contact surface”. Each contact surface 420 of the vias 42 is for example parallel and aligned with the flat surfaces 410, 411 of the substrate 4L. By “aligned”, we mean aligned to within 2 nm, preferably less.

[0062] Alternatively, the routing level 4 may comprise lines extending into the substrate 41 and exposing at least one surface equivalent to the contact surface 420 of the vias 42. To simplify the description, only embodiments having vias 42 will be presented.

[0063] The contact surfaces 420 make it possible to make electrical contact with different elements such as a via 42 or a line of an adjacent routing level 4, a heating element 52 of a memory 5 or even a logic component of the front-end 2.

[0064] The memories 5, 5' illustrated in Figures 1A and 1B comprise a first active layer 51 for storing information. An active layer 51 makes it possible, thanks to an internal change, induced by the circulation of a current or a thermal treatment, to show a difference in electrical resistance sufficiently large to be measurable and usable for storing information.

[0065] In the particular case of the invention, the first active layer 51 preferably comprises a phase change material for which a heat treatment comprising more or less brief cooling makes it possible to freeze a particular crystalline state. The active layer comprises a chalcogenide material. This is for example a GexSbyTez alloy (with x + y + z = 100%) such as GeiSb2Te4, GeTe, Sb2Te3. The GexSbyTez alloy may also comprise other elements of interest such as, for example: N, C, O, Si, Se, Bi, In or even As.

[0066] The subject of the invention is relevant for a phase change material because these materials are sensitive to the diffusion of copper. The subject of the invention can also be extended to other active materials which can be disturbed or degraded by the presence of copper. These are for example: • so-called “conductive bridge” materials (used in a CBRAM for “Conductive Bridge RAM” in English), implementing the formation / dissolution of a conductive filament in a solid electrolyte following diffusion of ions from an active electrode; • a so-called “reversible oxide breakdown” material (used in an OxRAM for “Oxide RAM” in English), implementing the reversible breakdown of a dielectric material as a function of an electrical voltage applied to this material; or • a magnetic material (used in an MRAM for “Magnetic RAM” in English), implementing a magnetization reversal depending on the circulation of a current within it.

[0067] In the embodiment of figures 1A and 1B, each memory 5, 5' comprises a first electrode 52, called "lower electrode", or "heating element" or "heater" or even "conductive finger", electrically connected to the first active layer 51. Each memory 5, 5' also comprises a second electrode 53, called "upper electrode", also electrically connected to the first active layer 51. The first active layer 51 is connected in series between the heating element 52 and the upper electrode 53.

[0068] In this embodiment, each heating element 52 is of the “WALL” type. The principle of a heating element of this type and the connection mode with an active layer is described in the document [“Optimization Metrics for Phase Change Memory (PCM) Cell Architectures”, M. Boniardi & al., IEDM14, IEEE 2014].

[0069] A heating element 52 of the “WALL” type is remarkable in that it comprises at least a first portion 521, called a “fin”, extending perpendicular to the flat surface 410 of the substrate 41 (in other words in a direction Z).

[0070] The manufacture of a WALL type heating element 52 may frequently involve the presence of a second portion 522, called the “heating element foot” or simply “foot”, consecutive to the fin 521 and extending parallel to the flat surface 410 of the substrate 41 (in other words in the plane {X; Y}). The foot 522 is preferably absent, in order to be able to bring the memories 5, 5' closer together and increase the information storage density per unit area.

[0071] Each heating element 52 can be made from a resistive material among: TiN, TiC, TiSiN, TiSiCN, TiWN, TaN and TaCN.

[0072] The first active layer 51 is connected to one of the ends 5211 of the fin 521. This small-sized contact improves the efficiency of the heat treatment that can be applied to the first active layer 51. It allows the programming of this layer 51 to be carried out with reduced energy consumption.

[0073] The foot 522 of the heating element 52 is electrically connected, on the one hand, to a contact surface of a via 42 of a routing level 4 (but not directly in contact with this surface 420) and on the other hand to a second end 5212 of the fin 521.

[0074] The vias 42 of the routing levels 4 of figures 1A and 1B are made of copper. The circuit 1 is remarkable in that it comprises a plurality of copper diffusion barriers 6. Each barrier 6 extends in the form of a thin layer, against the contact surface 420 of a copper via 42. Thus, the diffusion of copper towards the non-volatile memories 5, 5' is blocked.

[0075] Unlike a tungsten buffer, as implemented in the prior art, each diffusion barrier 6 is made from tantalum or titanium or cobalt or their alloys. Said alloys are for example: TaN / Ta, TiN, TiC, TiSiN, TiSiCN, TaN or even TaCN. Said alloys can also comprise tungsten, such as TiWN. Barriers based on tantalum or titanium or cobalt or their material alloys offer a good blocking capacity for the diffusion of copper atoms even with a limited thickness. It is therefore possible to form diffusion barriers 6 in the form of very thin layers, much thinner than a tungsten buffer according to the prior art. In addition, tungsten buffers can have a significant roughness, which may require chemical and / or mechanical polishing.The diffusion barriers 6, for their part, may have a thickness, measured perpendicular to the upper surface 410 of the substrate, of between 0.5 nm and 20 nm. For example, a TaN / Ta barrier 6 may have a thickness of 13 nm.

[0076] Some materials require the formation of several layers in order to form an effective barrier 6. For example, for TaN / Ta, the deposition of a layer of TaN on the copper makes it possible to grow a layer of Ta in a suitable crystalline phase.

[0077] The diffusion barriers 6 are preferably made only of TaN / Ta or TiN or TiC or TiSiN or TiSiCN or TaN or TaCN or Co, or even Ta or Ti. They can also be made of TiWN. In this way, the blocking of the diffusion of copper is improved and the thickness of the barriers 6 can be further reduced. More preferably, the diffusion barriers 6 are made only of TaN / Ta, TiN, TiC, TiSiN, TiSiCN, TaN or TaCN or even TiWN. These materials show the best blocking capacities and therefore make it possible to manufacture the thinnest layers.

[0078] According to an alternative embodiment, each diffusion barrier 6 may comprise cobalt Co. Indeed, the latter may be bonded to tungsten or phosphorus to improve its qualities as a barrier to copper. Alternatively, each diffusion barrier is made only of Co. Cobalt also offers a good blocking capacity for the diffusion of copper atoms even with a limited thickness. The advantage of materials such as cobalt lies in the manufacture of the diffusion barriers 6 which can be facilitated. Indeed, the copper contact surfaces 420 of the vias 42 (or lines) make it possible to carry out a selective deposition relative to the substrate and thus obtain a growth of layers at the level of said contact surfaces 420. The diffusion barriers 6 thus obtained are aligned on the contact surfaces 420, without a particular etching or delimitation step being necessary.

[0079] Other materials, based on tantalum or titanium, can also allow the growth of barriers 6 without etching or particular delimitation provided that these materials can be deposited on the copper selectively relative to the substrate (for example relative to the dielectric making up the substrate).

[0080] Blocking of copper diffusion is optimal when the diffusion barriers 6 extend over the entirety of the contact surfaces 420. For example, each diffusion barrier 6 can extend over the entirety of the contact surface 420 and beyond, for example extending over the upper surface 410 of the substrate 4L. The diffusion barriers 6 thus form effective barriers.

[0081] Alternatively, the diffusion barriers 6 may cover only a portion of each contact surface 420 while still providing sufficient blocking of copper diffusion. Indeed, the diffusion of copper depends on the temperature considered and the lifetime of the integrated circuit 1.

[0082] In addition, when the diffusion barriers 6 cover only a portion of each contact surface 420, passivation of the remaining portions of the contact surfaces 420 can be carried out. In this way, the oxide film forming on the remaining surfaces 420 complete the diffusion barriers 6. A layer of SiN can for example be deposited to achieve this passivation and complete the barriers 6.

[0083] Each diffusion barrier 6 provides a copper-free surface, on which a non-volatile memory 5, 5' can be connected. It therefore also ensures the electrical transport between a via 42 and a memory 5, 5'. For this, when the circuit 1 comprises several diffusion barriers 6, they are advantageously separated in order to avoid the creation of a short circuit between two vias 42 or two distinct memories 5, 5'.

[0084] In the embodiment of figures 1A and 1B, each non-volatile memory 5, 5' is connected to a diffusion barrier 6 via its heating element 52. In particular, the foot 522 of each heating element 52 extends over a diffusion barrier 6. The foot 522 can make it possible to further reduce the diffusion of copper by forming an excess thickness on the diffusion barrier 6.

[0085] Each memory 5, 5' may have a first active layer 51, distinct from the first active layers 51 of the other memories. In the embodiment of Figures 1A and 1B, the memories 5, 5' are arranged in groups of two. They are particularly special in that each group of memories 5, 5' has a common first active layer 51. Thus, each first active layer 51 of Figures 1A and 1B is in electrical contact with two heating elements 52.

[0086] Each memory 5, 5' has an upper electrode 53 extending over the first active layer 51. This upper electrode makes it possible, with the heating element 52, to carry out the circulation of an electric current in the first active layer 51, to carry out the heat treatment of the first active layer 51.

[0087] In the embodiment of Figures 1A and 1B, the memories 5, 5' have, two by two, a common first active layer 51 and a common upper electrode 53, extending over the common first active layer 51. The phase change that can give rise to the storage of information is located mainly on the electrical path between the point of contact with a heating element 52 and the upper electrode 53. A sufficient distance between these two electrical paths allows independent operation of the memories 5, 5' sharing the same first active layer 51.

[0088] Alternatively, two separate upper electrodes 53 may extend over the same first active layer 51 in order to improve the separation of the electrical paths.

[0089] The memories 5, 5' of figures 1A and 1B are electrically connected to a conductive track 7 extending parallel to the upper surface 410 of the substrate 41 and having protuberances connecting each upper electrode 53.

[0090] [Fig.2] shows a second embodiment of an integrated circuit 1 according to the invention. This figure shows the integrated circuit 1 from a perspective allowing the distribution of the diffusion barriers 6 to be observed, arranged according to a matrix of columns (extending in the Y direction) and rows (extending in the X direction). Each diffusion barrier 6 extends, in the form of a thin layer, over a via 42. It can be deduced that the vias 42 of the underlying routing level 4 are also arranged according to this same matrix of columns and rows. In the case where the routing level 4 comprises rows rather than vias, the rows may extend into the substrate in the X direction.

[0091] The non-volatile memories 5, 5' of [Fig. 2] are also arranged according to the matrix of columns and rows, each memory being located in the extension of a heating element 52. Unlike the embodiment of Figures 1A and 1B, where the neighboring memories 5, 5' of the same row share the same first active layer 51, all the memories 5, 5' of [Fig. 2] arranged according to the same column (i.e. in the Y direction) share the same first active layer 51. In the embodiment of Figures 1A and 1B, it is said that the memories 5, 5' form, two by two, "memory islands", while in the embodiment of [Fig. 2], it is said that the memories 5, 5' form, according to each column, "memory columns" (or "memory rows" if they are arranged according to the X direction).

[0092] [Fig. 3] shows a third embodiment of a circuit 1 according to the invention. Unlike the embodiments of FIGS. 1A, 1B and 2, the first active layers 51 of each memory 5, 5' are distinct from each other. In the same way, the upper electrodes 53 of each memory 5, 5' are distinct from each other.

[0093] The circuit 1 also comprises a plurality of second active layers 54 extending parallel to the upper surface 410 of the substrate 41, electrically connected to the first active layers 51 by extending against each upper electrode 53. This second active layer 54 plays for example the role of selection element, also called “memory selector”. It can behave like an ovonic threshold switch, called “OTS” for “Ovonic Threshold Switching” in English. For this, each second active layer 54 comprises for example an alloy based on Ge, Sb, Se, As, Si, Te, S or Al, which can be doped, such as the alloys of GeSbSe, GeSe, AsSeSiGe, AsSe, SbSe, SiSe, AsTe, SiGeSe or AlTe. The second active layer 54 may comprise any type of material allowing it to operate, according to different internal mechanisms, as a memory selector.

[0094] The upper electrode 53 between the two active layers 51, 54 of a memory 5, 5' makes it possible to improve the electrical contact between these two layers 51, 54 to make their behavior reproducible and identical from memory to memory.

[0095] In [Fig.3], each conductive track 7 is connected to the memories 5, 5' of a same column extending against the second active layers 54 of each memory 5, 5'.

[0096] Figures 4 to 18 show a first mode of implementation of a method for manufacturing an integrated circuit 1 according to the invention.

[0097] [Fig.4] shows a step of providing a copper routing level 4. The routing level 4 comprises a substrate 41 and a plurality of copper vias 42. The substrate 41 has a planar surface 410. Each via 42 passes through the substrate 41 from one side to the other and opens onto the planar surface 410 of the substrate 41, exposing a contact surface 420. A physicochemical planarization, called “CMP” for “Chemical and Physical Planarization” in English, can allow an upgrade of the planar surface 410 of the substrate 41 and the contact surfaces 420.

[0098] The vias 42 of the routing level are arranged according to a matrix of columns (along the Y direction) and rows (along the X direction).

[0099] Figures 5 to 18 show several steps for forming a diffusion barrier 6 on each via 42. They also show, together with the formation of the diffusion barriers 6, the formation of the memories 5, 5'.

[0100] [Fig. 5] shows a step of depositing a layer 61 of tantalum or titanium or cobalt or their alloys. These are, for example, so-called “ceramic” materials (such as TaN / Ta, TiN, TiC, TiSiN, TiSiCN, TiWN, TaN or TaCN alloys) or metallic materials (for example based on Co). For the remainder of the description, an implementation will be described where a so-called “barrier” material is deposited, referring to any of the materials based on tantalum or titanium or cobalt or their alloys. The barrier material is deposited in the form of a layer 61, called a “barrier material layer”.

[0101] The deposited barrier material layer 61 covers the substrate 41 and the contact surfaces 420 of the vias 42. Certain materials, such as TaN, may require the preliminary deposition of a layer of TaN on the substrate 41 and the vias 42, to allow the deposition of a homogeneous layer of Ta in a suitable crystalline phase.

[0102] Figures 6 to 18 show the steps for forming the heating elements 52 in parallel with the formation of the diffusion barriers 6. In particular, Figures 6 to 10 show the formation of a resistive layer 520, intended to form at least one heating element 52 comprising a fin 521 extending perpendicular to the layer 61 of barrier material and in line with several vias 42 aligned in a column. According to this manufacturing method, the heating element 52 also has a foot 522, extending against the layer 61 of barrier material, also in line with the same vias 42 aligned along the column.

[0103] For this, [Fig.6] shows a step of depositing a first layer 81 of dielectric material, on the layer of barrier material 61. The first dielectric layer 81 comprises for example a sub-layer of SiN, extending against the layer of barrier material 61, and a sub-layer of SiO2 extending on the layer of SiN.

[0104] Figures 7 and 8 show a step of photolithography and etching of the first dielectric layer 81. The first dielectric layer 81 is etched through a temporary etching mask 82, stopping on the barrier material layer 61, so as to form flanks 810 in the first dielectric layer 81. Each flank 810 is arranged directly above at least one via 42. In this case, in the example illustrated, the first dielectric layer 81 comprises four flanks 810, each of them extending along a column of vias 42 and directly above these vias 42. The first dielectric layer 81 also reveals the barrier material layer 61. This etching can be carried out using a fluorinated plasma.

[0105] [Fig.9] shows a step of conformal deposition of a layer 520 of resistive material on the first dielectric layer 81, including the sides 810 of the latter, and the exposed parts of the layer of barrier material 61. The resistive layer 520 is for example made from TiN, TiC, TiSiN, TiSiCN, TiWN, TaN or TaCN.

[0106] [Fig.9] also shows the conformal deposition of a second dielectric layer 83, for example made of SiN, on the resistive layer 520. The thickness of the second dielectric layer 83 makes it possible to control the extent of the foot 522 of the heating element 52 in the X direction. The absence of the second dielectric layer 83 makes it possible to avoid the appearance of the foot 522. However, its presence makes it possible to protect the integrity of the fin 521 during the etching of the resistive layer 520.

[0107] [Fig. 10] shows a step of anisotropic etching of the second dielectric layer 83 and of the resistive layer 520. This etching is oriented perpendicular to the flat surface 410 of the substrate 41 (in other words along -Z) with a stop on the layer 62 of barrier material. It can be carried out by means of a fluorinated and chlorinated plasma. It delimits in particular the fins 521 of the resistive layer 520, extending against the flank 810 of the first dielectric layer 81, and the feet 522 of the resistive layer 520, protected from the anisotropic etching by a part of the second dielectric layer 83 having a significant height (the height being measured along the Z direction).

[0108] The portions 521, 522 of the resistive layer thus extend directly above the vias 42 arranged in a column.

[0109] [Fig. 11] shows an anisotropic etching of the barrier material layer 61 with a stop on the substrate 41. This etching is carried out using the first dielectric layer 81, the remaining parts of the second dielectric layer 83 and the fins 521 of the resistive layer 520 as an etching mask. This etching makes it possible to delimit first strips 62 of barrier material in the barrier material layer 61. Each strip 62 extends against the contact surfaces 420 of vias 42 extending against two neighboring columns.

[0110] The etchings of the second dielectric layer 83, of the resistive layer 520 and of the barrier material layer 61 can be carried out sequentially in the same step. The etching of the barrier material layer 61 can also be carried out using a fluorinated and chlorinated plasma.

[0111] [Fig. 12] shows a conformal deposition of a third dielectric layer 84, for example in SiN, on all of the elements. This third dielectric layer 84 makes it possible to passivate the feet 522 of the resistive layer 520 (if they are present), intended to form the feet of the heating elements 52 of the memories 5.

[0112] [Fig. 13] shows an anisotropic etching, for example by means of a fluorinated plasma, of the third dielectric layer 84 with a stop on the substrate 4L. This etching removes the portions of the third dielectric layer 84 extending on the substrate 41 and joining two neighboring feet 522 of the resistive layer 520. On the other hand, it leaves portions extending perpendicular to the plane, against the remaining parts of the second dielectric layer 83 (themselves extending against the fins 521 of the resistive layer 520).

[0113] [Fig. 14] shows a step of filling the cavities exposing the substrate 4L. The filling is for example carried out by the deposition of a fourth dielectric material 85, for example in SiO2, covering all of the elements.

[0114] [Fig. 15] shows a CMP planarization step allowing to expose a part of each fin 521 on which the first active layers 51 will be connected.

[0115] The advantage of partially etching the third dielectric layer 84, as illustrated in [Fig. 13], is to remove the surface dielectric material, which facilitates the CMP planarization of [Fig. 15]. Indeed, it is simpler to planarize an oxide such as SiO2 rather than a dielectric such as SiN. We then obtain a CMP planarization of the oxide which is selective and with a stop on SiN which is controllable and reproducible in the sense of an industrializable process.

[0116] [Fig. 16] shows a step of depositing the first active layer 51 against the fins 521 and against the dielectric layers 81, 83, 84, 85 deposited previously. The first active layer 51 extends parallel to the upper surface 410 of the substrate 4L

[0117] [Fig. 16] also shows a step of depositing a first metal layer 53, intended to form the upper electrodes, on the first active layer 51.

[0118] [Fig. 17] shows a step of depositing a second etching mask 86 on the first active layer 51 and the first metal layer 53. The second etching mask 86 has islands aligned with the rows and columns of vias 42, i.e. in the X and Y directions. Each island is arranged and oriented so as to delimit, after etching, the diffusion barriers 6 and the memories 5, 5'.

[0119] For example, each island is arranged and oriented so as to completely cover, by projection along Z, two neighboring vias 46 of the same row. On the other hand, each of the islands only completely covers, by projection along Z, a single via 46 of the same column. In this way, the islands expose portions of the resistive layer 520 and the strips 62 of barrier material to etching.

[0120] The islands of the mask 86 are also distant from each other. In this case, the islands of the same line (aligned along X) have a separation perpendicular to each strip 62 of barrier material, exposing other portions of the latter to etching.

[0121] [Fig. 18] shows the result of an anisotropic etching step of: • the first active layer 51; • the first metal layer 53; • the resistive layer 520; and • 62 strips of barrier material, carried out through the second etching mask 86 and in particular through its islands, with a stop on the substrate 4L The resulting circuit corresponds to circuit 1 illustrated by figures IA and IB.

[0122] The arrangement of the islands of the second mask 86 makes it possible to form, after etching, the non-volatile memories 5, 5' as illustrated by FIGS. 1A and 1B. Each island of the second etching mask 86, covering two vias 42 of the same row, makes it possible to form memories 5, 5' of the same row whose first active layers 51 and upper electrodes 53 are common.

[0123] Etching through the second etching mask 86 also makes it possible to section the resistive layer 520 to delimit the heating elements 52 in the extension of each first active layer 51.

[0124] The combination of the etchings through the first mask (illustrated in [Fig. 10], comprising the first and second dielectric layers 81, 83 and the resistive layer 520) with the second mask 86 makes it possible to delimit each heating element 52 and each diffusion barrier 6 in the extension of one another.

[0125] Figures 19 to 22 show additional steps that can be implemented from cell 1 obtained by the step of [Fig. 18]. These steps complementary ones allow to manufacture a selector, for example in OTS, for each 5.5” memory and connect each selector to a conductive track 7. They allow in particular to obtain circuit 1 of [Fig.3].

[0126] [Fig. 19] shows the formation of a second active layer 54 on each upper electrode 53. The second active layer 54 is for example deposited, during the step of [Fig. 16], on the first metal layer 53. Thus the etching of [Fig. 17] makes it possible to obtain a plurality of memories 5, 5' with a first active layer 51, for example responsible for storing information, and a second active layer 54, intended to form a selection element (also called "selector") of the first active layer 51. The materials indicated previously can be used to produce this second active layer 54. In order to facilitate the connection of the memories 5, 5' to the conductive tracks 7, a second metal layer 55 can also be deposited on the second active layer 54.

[0127] [Fig.20] shows the encapsulation of the memories 5, 5' comprising the conformal deposition of a fifth dielectric layer 87 against the sides of each memory 5, 5' and the filling of the cavities left by the encapsulation with a sixth dielectric layer 88, for example in SiO2. The top of the memories 5, 5' is released by means of a CMP planarization step with stopping on the top of the memories 5, 5', i.e. the second metal layer 55.

[0128] [Fig.21] shows the deposition of a third metal layer 71 making it possible to produce the conductive tracks 7.

[0129] [Fig.22] shows a step of etching the third metal layer 71 and the different layers 51, 52, 53, 54, 55 of the memories 5, 5'. The etching is carried out through a third etching mask aligned on the columns of vias 42, with a stop on the substrate 4L. This etching separates the memories 5, 5' from each other (i.e. the first and second layers 51, 54 are distinct), each being connected to a conductive track 7.

[0130] A first variant of implementation of the method consists in replacing the deposition and the etchings aimed at forming the diffusion barriers 6 by a step of growth of said barriers 6. The growth of the barriers comprises for example a step of selective deposition with respect to the substrate 4L. The materials used to carry out the selective deposition therefore comprise any type of material based on Ta, or Ti or Co and allowing selective deposition. These are for example so-called “ceramic” materials as presented previously (for example TaN / Ta, TiN, TiC, TiSiN, TiSiCN, TiWN, TaN or even TaCN) or metallic materials, such as titanium or tantalum or cobalt. The selective deposition of a compatible material with respect to the substrate 41 thus makes it possible to carry out the growth of the barriers from each contact surface 420 of the vias 42, opening onto the substrate 4L. It is therefore no longer necessary to use an etching step to delimit and align the barriers 6 with the vias 42.

[0131] Figures 23 to 25 show a variant implementation of the manufacturing method, in particular figures 16 to 18. This variant makes it possible to obtain the circuit of [Fig.2].

[0132] Before depositing the first active layer 51 and the first metal layer 53, this variant proposes to etch the stack of [Fig. 15] through an etching mask, with a stop on the substrate 41. The result of the etching is illustrated by [Fig.23]. It makes it possible to delimit each heating element 52 and each diffusion barrier 6 in the extension of one another. The etching mask used to carry out the etching is similar to the second etching mask 86 illustrated in [Fig. 17], notably comprising islands.

[0133] [Fig.24] shows the result of a step of depositing a seventh dielectric layer 89, for example in SiN, and of a CMP planarization with stop at the top of the heating elements 52.

[0134] [Fig.25] shows the circuit 1 obtained after the deposition of a first active layer on the stack of [Fig.24] and the etching of the latter so as to form lines of first active layer 51, extending against the heating elements 52 of the same line.

Claims

Claims

1. Integrated circuit (1) comprising: - a substrate (41) having a flat surface (410); - at least one via (42) or line, made of copper, extending in the substrate (41) and opening onto the flat surface (410) of the substrate (41) by exposing a surface (420) called the “contact surface”; and - at least one non-volatile memory (5, 5') comprising: - a first electrode (52), called the “heating element”; - a second electrode (53), called the “upper electrode”;and - a first active layer (51) between the heating element (52) and the upper electrode (53), electrically connected to the upper electrode (53) and to the heating element (52), the integrated circuit (1) being characterized in that it comprises at least one copper diffusion barrier (6) based on tantalum or titanium or cobalt or one of their alloys, said at least one diffusion barrier (6) extending in the form of a layer against at least a part of the contact surface (420) of said at least one via (42) or of said at least one line, the heating element (52) of said at least one non-volatile memory (5, 5') being in contact with the first active layer (51) of said at least one non-volatile memory (5, 5') and in contact with said at least one diffusion barrier (6).;

2. Integrated circuit (1) according to the preceding claim, in which, for each non-volatile memory (5, 5'), each heating element (52) comprises a portion (521), called a "fin", extending perpendicular to the surface (410) of the substrate (4) and comprising a first end (5211), in contact with the first active layer (51) of said non-volatile memory, and a second end (5212), in contact with said at least one diffusion barrier (6).

3. Integrated circuit (1) according to one of the preceding claims, wherein each diffusion barrier (6) extends against the entire contact surface (420) of said at least one via (42) or of said copper line.

4. Integrated circuit (1) according to one of the preceding claims, wherein each heating element (52) comprises a material from among: TiN, TiC, TiSiN, TiSiCN, TiWN, TaN and TaCN.

5. Integrated circuit (1) according to one of the preceding claims, in which the first active layer (51) of each volatile memory (5, 5') comprises a chalcogenide material.

6. Integrated circuit (1) according to one of the preceding claims, comprising: - a plurality of non-volatile memories (5, 5'); and - a plurality of diffusion barriers (6), spaced from each other; - a plurality of copper vias (42) or copper lines, each via or line extending in the substrate (41) and opening onto the surface (410) of the substrate (41) exposing a contact surface (420), said contact surfaces (420) being arranged in a matrix, each diffusion barrier (6) extending in the form of a layer against at least a portion of the contact surface (420) of one of the vias (42) or one of the lines, the heating element (52) of each non-volatile memory (5, 5') being connected to one of the diffusion barriers (6).

7. Integrated circuit (1) according to one of claims 1 to 6, in which the first active layers (51) of the different non-volatile memories (5, 5') are laterally isolated from each other.

8. Integrated circuit (1) according to one of claims 1 to 6, in which the same first active layer (51) is continuous and common to at least two non-volatile memories (5, 5'), said same first active layer (51) being in contact with each heating element (52) of said at least two non-volatile memories (5, 5').

9. Integrated circuit (1) according to one of the preceding claims, comprising a selection element (54) associated with said at least one non-volatile memory (5, 5'), the selection element (54) being an ovonic threshold switch called "OTS".

10. Integrated circuit (1) according to one of the preceding claims, devoid of tungsten between said at least one via (42) or said at least one line and the heating element (52) of said at least one non-volatile memory (5, 5').

11. A method of manufacturing an integrated circuit (1) comprising the steps of: - providing: - a substrate (41) having a planar surface (410); and - at least one via (42) or at least one line, made of copper, extending in the substrate (41) and opening onto the planar surface (410) of the substrate (41) by exposing a surface (420) called the "contact surface", - forming at least one diffusion barrier (6) of copper based on tantalum or titanium or cobalt or their alloys, so that said at least one diffusion barrier (6) extends in the form of a layer against at least a portion of the contact surface (420) of said at least one via (42) or of said at least one line; - forming at least one non-volatile memory (5, 5') comprising: - a first electrode (52), called a “heating element”, being in contact with said at least one diffusion barrier (6);- a second electrode (53), called the “upper electrode”; and - a first active layer (51) between the heating element (52) and the upper electrode (53), electrically connected to the upper electrode (53) and in contact with the heating element (52).;

12. A manufacturing method according to claim 11, wherein the manufacturing of each diffusion barrier (6) comprises a step of growing said diffusion barrier (6) by selective deposition of tantalum or titanium or cobalt or their alloys on the contact surface (420) of a copper via (42) or a copper line.

13. Manufacturing method according to claim 11, in which the manufacturing of the diffusion barrier (6) comprises the steps of: - depositing a layer (61) based on tantalum or titanium or cobalt or their alloys, called "barrier material layer", on the flat surface (410) of the substrate (4) and the surface

14. contact (420) of said at least one via (42) or of said at least one copper line; - etching the barrier material layer (61) through at least one etching mask (81, 521, 86), with a stop on the substrate (41), so as to form the at least one diffusion barrier (6). Manufacturing method according to the preceding claim, wherein the formation of each non-volatile memory (5, 5') comprises the steps of: - forming, before the step of etching the rear material layer (61), a first dielectric layer (81) extending over the barrier material layer (61), leaving at least a portion of the barrier layer (61) free, said first dielectric layer (81) comprising at least one flank (810) extending perpendicular to the flat surface (410) of the substrate (41), directly above the contact surface (420) of said at least one via (42) or of said at least one line; - depositing a resistive layer (520) in a conforming manner on the first dielectric layer (81) and on said at least one free portion of the barrier layer (61); - etching the resistive layer (520) anisotropically, perpendicular to the flat surface of the substrate (410), stopping on the barrier layer (61), so as to leave a portion (521) of the resistive layer (520), called a "fin", extending perpendicular to the flat surface (410) of the substrate (41), from the barrier layer (61), against the flank (810) of the first dielectric layer (81) and directly above the contact surface (420) of said at least one via (42) or of said at least one line; - etching the barrier material layer (61) anisotropically through a first etching mask (81, 521), stopping on the substrate (41), the first etching mask comprising the first dielectric layer (81) and the fin (521); - etch the fin (521) and the barrier material layer (61) anisotropically through a second etching mask (86), with a stop on the substrate (41), so as to delimit

15. iterate each diffusion barrier (6) from the barrier material layer (61), at a part of the contact surface (420) of said at least one via (42) or of said at least one line, and so as to delimit each first electrode (52), called “heating element”, from the fin (521), in the extension of a diffusion barrier (6). Manufacturing method according to the preceding claim, wherein the formation of each non-volatile memory (5, 5') comprises the steps of: - depositing, before etching the fin (521) and the barrier material layer (61) through the second etching mask (86), a first active layer (51) extending parallel to the flat surface (410) of the substrate (41) and in contact with each fin (521); - etching the first active layer (51) through the second etching mask (86) so as to delimit the first active layer (51) in the extension of a heating element (52) and a diffusion barrier (6).

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