Electronic device

Abstract

Electronic device The present description relates to an electronic device (10) comprising a substrate (12) and at least one first input / output pad (16a, 16b), each first pad (16a, 16b) being connected to the substrate (12) by an assembly (18), each assembly (18) comprising first (22) and second (20) wells, the first well (22) being located in the second well (20), the second well (20) being located in the substrate (12), the substrate (12) and the first well (22) of each assembly (18) being doped with a first conductivity type, the second well (20) of each assembly being doped with a second conductivity type opposite to the first conductivity type,each assembly (18) being configured so that the threshold voltage of the diode (32) formed by the first and second wells of the assembly (18) is lower than the threshold voltage of the diode (34) formed by the second well (20) and the substrate (12) when the first conductivity type is the P type, or higher than the threshold voltage of the diode (34) formed by the second well (20) and the substrate (12) when the first conductivity type is the N type. Figure for the abstract: Fig. 1,

Claims

[Claim 9] the first pads (16a, 16b) are connected to an electronic circuit (14). Device according to claim 8, in which the electronic circuit (14) comprises bipolar transistors. [Fig. 1]

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