Quantum cascade laser emitting in the mid-infrared

Abstract

The invention relates to a quantum cascade laser emitting a polarized TM optical mode with a wavelength between 3 and 15 µm, comprising an amplifying medium and a main waveguide. The latter includes a coupling section in contact with the amplifying medium, comprising a diffraction grating (DFB). The coupling section has a width greater than or equal to a minimum width from which an antisymmetric supermode propagating in a laser guidance structure comprising the amplifying medium and the main waveguide has a confinement factor in an active region of the amplifying medium strictly greater than those of the optical modes capable of being guided by the guidance structure. The main waveguide comprises a core based on atoms from column IVA of the periodic table of elements and a confinement subshell of SiN or a chalcogenide. (See Figure 1A for the abstract.)

Description

Title of the invention: Quantum cascade laser emitting in the mid-infrared. Technical field

[0001] The field of the invention is that of quantum cascade lasers emitting in the mid-infrared, for example in the wavelength range between 3 pm and 15 pm. The invention relates, for example, to a gas sensor comprising such a quantum cascade laser. PREVIOUS STATE OF THE ART

[0002] Quantum cascade lasers are commonly used in gas detection systems, for example, a non-dispersive infrared gas sensor or a photoacoustic spectrometer. Each quantum cascade laser typically emits a light flux at a wavelength absorbed by the gas to be detected. The wavelength range of interest for this application is the mid-infrared from 3 pm to 15 pm, and more particularly the wavelength range from 4 pm to 15 pm.

[0003] Distributed Feedback (DFB) quantum cascade lasers exist. A DFB quantum cascade laser generally comprises an amplifying medium made of III-V materials. The amplifying medium has an active region composed of alternating quantum wells and barriers, for example, InGaAs for the wells and AlInAs for the barriers. The amplifying medium has geometric dimensions and refractive indices that allow the guiding of a laser optical mode at an emission wavelength along an optical axis of the amplifying medium. In operation, the energy difference between two conduction bands of two adjacent wells in the active region is such that an electron emits a photon at the emission wavelength when passing from one well to the other, thereby exciting the laser optical mode. The quantum wells extend parallel to a plane containing the optical axis.The photon is polarized perpendicularly to the quantum wells; consequently, the same is true of the laser optical mode.

[0004] In a cutting plane perpendicular to the quantum wells, the laser mode is guided by a lower confinement layer and an upper confinement layer arranged on either side of the active region. The lower and upper confinement layers each have a refractive index lower than a minimum refractive index of the active region. They are made of a doped semiconductor material for They transport electrons to or from the active region. Consequently, they have a dual function and are generally made of N-doped InP.

[0005] A grating satisfying the Bragg condition at the emission wavelength is structured in or on the amplifying medium so as to diffract the laser optical mode, causing it to travel back and forth within the amplifying medium. A laser beam is emitted from a lateral face of the amplifying medium orthogonal to the quantum wells and the optical axis. It has a dimension greater than or equal to the emission wavelength at the lateral face. The amplifying medium can have transverse dimensions on the order of twice the emission wavelength. The length of the amplifying medium along the optical axis is sufficient to obtain the desired laser beam power.

[0006] For specific applications, such as gas detection, it is often necessary to optically couple one or more quantum cascade lasers to an integrated photonic circuit providing optical functions. For a photoacoustic spectrometer, for example, it may be necessary to multiplex the laser beams emitted at different emission wavelengths by several quantum cascade lasers at the inlet of a chamber containing a gas to be analyzed. Multiplexing can be performed using an array of waveguides (AWG).

[0007] A conventional integrated photonic circuit comprises silicon waveguides encapsulated in silicon oxide layers. However, silicon oxide transmits little or no light in the wavelength range of interest. Therefore, it is not possible to optically couple a quantum cascade laser emitting a laser beam in the mid-infrared to a conventional photonic circuit.

[0008] It is known to couple a quantum cascade laser to a photonic circuit by means of an edge coupler of the photonic circuit, that is, by one side face of the edge coupler and a photonic chip comprising the photonic circuit. The edge coupler includes a waveguide optically coupled to other waveguides and / or optical components of the photonic circuit. All waveguides of the photonic circuit are made of one or more identical materials. Since the laser beam emitted in the wavelength range of interest is large, it is necessary to use waveguides having a low refractive index contrast between their core and their confinement layers. All waveguides of the photonic circuit generally have a germanium core and one or more silicon-germanium confinement layers. These materials are not standard in the field of integrated photonics.Furthermore, the low refractive index contrast means that the waveguides are large and only slightly curved. The photonic chip is therefore quite large. When it is part of a... In the gas sensor, the chamber containing the gases to be analyzed is sized in proportion to the size of the waveguides. It is therefore also quite large.

[0009] There is therefore a need to optically couple quantum cascade lasers emitting in the range of wavelengths of interest to a photonic chip comprising waveguides with higher refractive index contrast and transparent to wavelengths in the mid-infrared.

[0010] In the field of data communications between chips, known as "datacom," and in the field of telecommunications, known as "telecom," it is known to optically couple an amplifying medium made of III-V materials to a conventional photonic circuit by evanescent coupling with a silicon main waveguide of the photonic circuit. The main waveguide includes a grating in a coupling section of the main waveguide, capable of providing distributed feedback in the amplifying medium at an emission wavelength within a range of photoluminescence wavelengths of the amplifying medium. The main waveguide further includes a modal transition section ensuring adiabatic coupling of the laser mode to a propagation section of the main waveguide. The propagation section is not adjacent to the amplifying medium. It is optically coupled to one or more components of the photonic circuit.The photonic circuit is part of a photonic chip. The assembly comprising the amplifier medium and the main waveguide are elements of a hybrid laser integrated into the photonic chip; that is, the hybrid laser is an integral part of the photonic chip.

[0011] An example of a laser integrated into a photonic chip, particularly advantageous for datacom or telecom applications, is described in document EP3793045 AL. In this document, the amplifying medium comprises a stack of quantum wells interposed between a P-doped upper confinement layer and an N-doped lower confinement layer. The amplifying medium is bonded to a substrate extending along a principal plane. The quantum wells extend parallel to the principal plane. An optical waveguide includes a coupling section facing the amplifying medium, a propagation section not facing the amplifying medium, and a modal transition section extending from the coupling section to the propagation section. The waveguide extends parallel to the principal plane. A silicon oxide bonding layer separates the amplifying medium from the coupling section.The coupling section includes a diffraction grating.

[0012] During operation, an electron recombines with a hole in a quantum well to emit a photon polarized parallel to the quantum wells and the principal plane. The waveguide is dimensioned relative to the amplifying medium such that the polarized photon excites an antisymmetric, or odd, supermode of the structure composed of the amplifying medium and the coupling section. Given the polarization of the photon, the antisymmetric supermode is of the electrically transverse (ET) type. The modal transition section gradually narrows from the coupling section to the propagation section to ensure a modal conversion between the antisymmetric supermode and an optical mode propagating in the propagation section. The optical mode therefore has the same polarization as the antisymmetric supermode, that is, an electrically transverse (ET) polarization. Description of the invention

[0013] The invention aims to remedy at least in part the drawbacks of the prior art, and more particularly to propose an integrated quantum cascade laser, the laser emitting a polarized optical mode of the magnetic transverse type (TM) at a wavelength X between 3 pm and 15 pm.

[0014] To this end, the object of the invention is a quantum cascade laser for emitting a magnetic transverse polarized optical mode at a wavelength X between 3 pm and 15 pm, comprising a semiconductor amplifying medium having an active region, and a main waveguide extending parallel to the active region. The main waveguide has a coupling section in contact with the amplifying medium, comprising a diffraction grating configured to generate distributed feedback in the amplifying medium at the wavelength X, and a propagation section separate from the amplifying medium, suitable for guiding the optical mode.The quantum cascade laser is such that the coupling section has a width W greater than or equal to a minimum width Wmin, from which an antisymmetric supermode propagating in a laser guidance structure comprising the amplifying medium and the main waveguide has a confinement factor in the active region strictly greater than the confinement factors in the active region of the optical modes capable of being guided by the guidance structure. The quantum cascade laser is such that the main waveguide has a core made of a material based on atoms from column IV A of the periodic table of elements and a confinement sublayer of silicon nitride or a chalcogenide, on one side of the main waveguide opposite the amplifying medium.

[0015] Some preferred but not limiting aspects of this quantum cascade laser are as follows.

[0016] The main waveguide may further include a modal transition section in contact with the amplifying medium, extending from the coupling section to the propagation section. The modal transition section may gradually narrow from the coupling section to the propagation section so as to ensure a modal conversion between the antisymmetric supermode and the optical mode.

[0017] The amplifying medium may include a lower semiconductor portion in contact with the main waveguide and an upper semiconductor portion, both N-doped. The active region may be intercalated between the lower and upper semiconductor portions.

[0018] The active region and the upper semiconductor portion can each and together have a right parallelepiped shape.

[0019] The diffraction grating may include teeth, each of depth hr, the width W and the depth hr being such that the diffraction grating has a coupling force Kr between 5 cm 1 and 100 cm4, preferably between 10 cm 1 and 28 cm4.

[0020] The diffraction grating may include teeth, each of depth hr, the depth hr being greater than a minimum depth hrmin allowing to contain a variation of a coupling force Kr of the diffraction grating as a function of hr within an acceptable range of variation determined to ensure compliance with a specification of the quantum cascade laser.

[0021] A gas sensor may include a photonic chip, a chamber optically coupled to the photonic chip, the photonic chip being able to include a quantum cascade laser according to any of the preceding characteristics, integrated into the photonic chip.

[0022] The quantum cascade laser can be an element of an array of several quantum cascade lasers according to any one of the preceding characteristics, each quantum cascade laser of the array being able to be configured to emit an optical mode at a wavelength Xi different from the wavelengths of the optical modes emitted by the other quantum cascade lasers of the array.

[0023] The photonic chip may include a wavelength multiplexer and a structured layer. Each propagation section of a quantum cascade laser in the array may be optically connected to a separate input of the multiplexer. The multiplexer may include an output waveguide optically coupled to each of the multiplexer inputs and to the chamber. The structured layer may include the multiplexer, the output waveguide, and each of the main waveguides of the quantum cascade lasers in the array.

[0024] The structured layer may further include at least a part of the chamber.

[0025] The chamber can be a Helmholtz differential resonance photoacoustic cell. Brief description of the drawings

[0026] Other aspects, objects, advantages and features of the invention will become clearer upon reading the following detailed description of preferred embodiments of this, given by way of non-limiting example, and made with reference to the attached drawings on which:

[0027] [Fig.1A] is a schematic top view of a quantum cascade laser according to the invention;

[0028] [Fig.1B] is a schematic longitudinal cross-sectional view of the laser;

[0029] [Fig.1C] is a schematic cross-sectional view of the laser;

[0030] [Fig.2] is a schematic top view of a gas sensor implementing a quantum cascade laser array according to the invention;

[0031] [Fig.3] is a graph showing evolutions of effective refractive indices of magnetic transverse (TM) type modes guided in respective waveguides, as a function of the width of the waveguides;

[0032] [Fig.4] is a graph showing evolutions of the confinement of laser supermodes, as a function of the width of a main laser waveguide;

[0033] [Fig.5] is a graph showing evolutions of the coupling strength of laser supermodes with a laser diffraction grating, as a function of the width of the main waveguide;

[0034] [Fig.6] is a graph showing evolutions of the coupling strength of an antisymmetric supermode of the laser with the diffraction grating, as a function of a tooth depth of the diffraction grating.

[0035] DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

[0036] In the figures and throughout the description, the same reference numerals represent identical or similar elements. Furthermore, the various elements are not drawn to scale in order to enhance the clarity of the figures. Moreover, the different embodiments and variants are not mutually exclusive and may be combined. Unless otherwise indicated, the terms "approximately," "about," and "in the order of" mean within 10%, and preferably within 5%. Furthermore, the terms "between ... and ..." and equivalents mean that the limits are inclusive, unless otherwise stated.

[0037] The invention relates to a quantum cascade laser emitting a magnetic transverse polarized optical mode at a wavelength X within the range of wavelengths of interest. It comprises a semiconductor amplifying medium in contact with a primary waveguide of the laser. The primary waveguide has a coupling section comprising a diffraction grating, in contact with the amplifying medium. It has a propagation section that is not in contact with the amplifying medium and a modal transition section interposed between the coupling section and the propagation section.

[0038] The coupling section and the amplifying medium have dimensions enabling the guiding of a supermode at wavelength X in a guiding structure comprising The amplifying medium and the coupling section. A diffraction grating step satisfies the Bragg condition for the X wavelength. It is arranged relative to the amplifying medium in such a way as to create an optical cavity through a distributed feedback phenomenon. Thus, the amplifying medium is not separated from the coupling section by a bonding layer, and the quantum cascade laser is an integrated DFB laser, without an absorbing layer in its optical cavity.

[0039] The coupling section also has a width greater than a minimum width identified by the inventors, above which the supermode is an antisymmetric supermode. This ensures a good side mode suppression ratio (or SMSR).

[0040] In the description, "symmetric supermode" and "antisymmetric supermode" are given their common technical meanings. For the sake of clarity, however, it is specified that an antisymmetric supermode, also sometimes called an odd supermode, is a particular optical mode propagating along an optical axis in a waveguide structure comprising two parallel waveguides, such that, in any plane orthogonal to the optical axis, the electric field of the optical mode in one of the waveguides is phase-shifted by ir with respect to the electric field of the optical mode in the other waveguide.A symmetric supermode, also sometimes called an even supermode, is a particular optical mode propagating along an optical axis in a waveguide structure comprising two parallel waveguides, such that, in any plane orthogonal to the optical axis, the electric field of the optical mode in one of the waveguides is in phase with the electric field of the optical mode in the other waveguide.

[0041] The Side Mode Suppression Ratio (SMSR) of a distributed feedback (DFB) laser is a measure of the laser's ability to suppress side modes relative to the main mode of laser emission. It is equal to the ratio of the main mode intensity to the intensity of the stronger side mode. It is generally expressed in decibels (dB).

[0042] Throughout this description, a waveguide is a single-mode or multi-mode waveguide capable of confining light, as opposed to optical waveguides in which light propagates by total internal reflection. Without further specification, a waveguide can be of any type. For example, it can be a ribbon, edge, or planar waveguide. A waveguide has a core and, optionally, one or more confinement layers surrounding the core so as to be in physical contact with it. A contrast or variation in refractive indices between the core and the confinement layer(s), a gas, or a vacuum, allows the light to be confined. Waveguides are identified by their cores in the figures. Similarly, without further specification, a refractive index of a waveguide is a refractive index of the waveguide core; a distance separating two waveguides is the distance separating the cores of the respective waveguides; the material of a waveguide is the material of the waveguide core; when a waveguide extends in a direction, it is understood that the waveguide core extends in that direction; when a waveguide is in contact with a layer, it is understood that the waveguide core is in contact with the layer.

[0043] For the purposes of this description, a layer is defined as an area consisting of one or more sublayers of a material whose thickness along a z-axis is less than, for example, ten times or even twenty times, its longitudinal dimensions of width and length in an xy plane perpendicular to the z-axis. A layer may be structured. When it consists of several sublayers, the sublayers may be made of different materials. The sublayer(s) extend in planes substantially parallel to the xy plane. When a layer is made of a particular type of material, it may comprise several sublayers, all of the same type of material.

[0044] Throughout this description, two optical components are said to be optically coupled when an optical mode can propagate at least partially through both optical components, possibly via intermediate optical components. The coupling can be achieved in various ways, for example, via direct coupling, a diffraction grating, adiabatic coupling, evanescent coupling, directional coupling, etc.

[0045] Specific embodiments will be described relating to an integrated quantum cascade laser of the DFB type. However, these embodiments can be adapted to other types of integrated lasers, such as, for example, a quantum cascade laser of the DBR (or Distributed Bragg Reflector) type.

[0046] Figures IA, IB and IC are views of a quantum cascade laser 1 according to the invention. [Fig. 1A] is a top view showing the section plane AA of [Fig. 1B], and the section plane BB of [Fig. 1C].

[0047] The quantum cascade laser 1 is configured to emit a polarized optical mode at a wavelength X. It comprises a substrate 100, a main waveguide 120 and an amplifying medium 130. The substrate 100 has a substantially flat top face.

[0048] A three-dimensional orthogonal direct coordinate system (X, Y, Z) is defined here and for the remainder of the description, where the X and Y axes form a plane parallel to the upper face of the substrate 100, the X axis being oriented in the cutting plane AA, and where the Z axis is oriented substantially orthogonally to the upper face of the substrate 100, from the upper face towards the amplifying medium 130. In the remainder of the description, the terms "vertical" and "vertically" are understood to refer to an orientation substantially parallel to the Z axis, and the terms "horizontal" and "horizontally" as referring to an orientation substantially parallel to the (X, Y) plane. Furthermore, the terms "lower" and "upper" are understood as referring to an increasing positioning as one moves away from the substrate 100 along the +Z direction. The term "lateral" refers to an orientation substantially parallel to the Z axis.

[0049] The substrate 100 can be made from a wafer of a semiconductor material, possibly after undergoing a cutting and / or thinning step. In this example, the substrate 100 is made of silicon.

[0050] A lower encapsulation layer 110 is in contact with the upper face of the substrate 100. On one side opposite the substrate 100, it has a substantially flat upper face parallel to the upper face of the substrate 100. The main waveguide 120 extends along a first axis on the upper face of the lower encapsulation layer 110, in contact with a confinement sublayer of the lower encapsulation layer 110. Here, the first axis is straight and parallel to X. In this example, the cutting plane BB is a plane of symmetry of the main waveguide 120.

[0051] The confinement sublayer is made of a material transparent at wavelength X. For example, it is made of a dielectric material. The lower encapsulation layer 110 may or may not include additional sublayers. If included, the additional sublayers may be of any nature. In this example, the confinement sublayer is made of silicon nitride (SiN) or an amorphous chalcogenide. Here, the lower encapsulation layer 110 includes an additional sublayer in contact with the confinement sublayer and the substrate 100, made of silicon oxide.

[0052] The main waveguide 120 is made of a material transparent at wavelength X, for example, a semiconductor material whose band gap energy is greater than the photon energy at wavelength X. The semiconductor material may be based on atoms from group IV A of the periodic table of elements, that is, it comprises at least 90% atoms from group IV A, preferably at least 99%. It may, for example, be silicon, silicon-germanium, or germanium. The main waveguide 120 is here part of a structured silicon layer 115, which is the conventional material used in silicon photonics in the field of data communications or telecommunications. It has a thickness measured parallel to the Z-axis, preferably constant, of between 0.5 pm and 5 pm, for example, 2.6 pm. In this example, the main waveguide 120 is an edge waveguide.Here, the edge is at least partly delimited laterally, in a plane parallel to the (X, Y) plane by two long cavities 155. .

[0053] The amplifying medium 130 is opposite the elongated cavities 155. The elongated cavities 155 extend parallel to the (X, Y) plane, preferably beyond two lateral faces of the amplifying medium 130, opposite and perpendicular to the X axis. It is in contact with support surfaces 115.1 of the structured layer 115, located on either side of the main waveguide 120. The elongated cavities 155 extend into the structured layer 115 from the support surfaces 115.1, over a substantially constant depth hc. They have a width Wc measured parallel to the (X, Y) plane and perpendicular to the first axis. They are filled with a material transparent at wavelength X, with a refractive index strictly lower than a refractive index of the main waveguide 120. In this example, they are filled with air.

[0054] The main waveguide 120 comprises a coupling section 120.1, a modal transition section 120.2, and a propagation section 120.3. The coupling section 120.1 has a substantially flat upper face parallel to the (X, Y) plane. It is in contact with the amplifying medium 130 over its entire upper face. It has two opposite sides parallel to the first axis, here substantially orthogonal to the (X, Y) plane. The upper face of the coupling section 120.1 joins the sides together. The coupling section 120.1 has a width W measured parallel to the Y-axis. The widths W and Wc, as well as the respective materials of the main waveguide 120 and the elongated cavities 155, allow the light to be confined to the wavelength X. Here, the width W is the width of the edge of the main waveguide 120 at the coupling section 120.1. It is equal to the distance separating the two opposite sides.In this example, the width W is approximately constant and equal to the distance separating the long cavities 155.

[0055] The propagation section 120.3 has dimensions that allow the propagation of the polarized optical mode. It is separated from the amplifying medium 130, that is to say, the amplifying medium 130 does not cover at least part of the propagation section 120.3, and is therefore not in contact with it at the level of this part.

[0056] The modal transition section 120.2 extends parallel to the (X, Y) plane from the coupling section 120.1 to the propagation section 120.3. In a plane parallel to the (X, Y) plane, the modal transition section 120.2 gradually narrows from the coupling section 120.1 to the propagation section 120.3. Preferably, it has a horizontal width equal to W at a proximal position in contact with the coupling section 120.1. It is at least partially opposite the amplifying medium 130. The propagation section 120.3 and the modal transition section 120.2 preferably have identical horizontal widths at a distal position of the modal transition section 120.2 in contact with the propagation section 120.3.

[0057] The amplifying medium 130 extends along a second axis parallel to the first axis and to the (X, Y) plane. The first and second axes define a plane coplanar with the cutting plane AA. In this example, the cutting plane AA is a plane of symmetry of the main waveguide 120 and the amplifying medium 130. In this example, the cutting plane BB is a plane of symmetry of the amplifying medium 130.

[0058] The amplifying medium 130 comprises a lower semiconductor portion 132, an upper semiconductor portion 137, and an active region 135 interposed between the lower and upper semiconductor portions 132, 137. The active region 135 contains quantum wells extending parallel to the (X, Y) plane. The lower and upper semiconductor portions 132, 137 are N-type doped. They are made of a crystalline semiconductor material, in this example indium phosphide (InP). Here, the active region 135 and the upper semiconductor portion 137 each have, substantially, together, a right parallelepiped shape. They have a width Wa measured parallel to the Y-axis.

[0059] The active region 135 partially covers the lower semiconductor portion 132. Preferably, the lower semiconductor portion 132 completely covers the part of the elongated cavities 155 facing the amplifying medium 130. A lower electrode 140 is in contact with an upper surface of the lower semiconductor portion 132, which is not covered by the active region 135. Here, the lower electrode 140 surrounds the active region 135 and the upper semiconductor portion 137. It is electrically isolated from the active region 135 and the upper semiconductor portion 137 by an insulating coating 145 interposed between, on one side, the lower electrode 140 and, on the other, the active region 135 and the upper semiconductor portion 137. The insulating coating 145 is advantageously a passivation layer for the active region 135 and / or the upper semiconductor portion. 137.

[0060] An upper electrode 150 is in contact with an upper face of the upper semiconductor portion 137. The lower electrode 140 and the insulating coating 145 are flush with the upper face of the upper semiconductor portion 137. The lower and upper electrodes 140, 150 are made of an electrically conductive material, for example, metal.

[0061] The active region 135 is preferably an alternation of quantum wells and barriers, for example between 20 and 50 wells interspersed between two barriers. The wells may be made of InGaAs in combination with barriers made of AlInAs, or of AlAsSb. Alternatively, the wells may be made of InAs with barriers made of AlSb, and preferably, a lower semiconductor portion 132 and / or an upper semiconductor portion 137 made of InAs or GaAs. In all cases, two or more wells (barriers) may be made in the same semiconductor alloy but have different atomic concentrations of an element of the alloy. different. The active region 135, for example, has a length along the X-axis between 0.5 mm and 3 mm. It has, for example, a height measured along the Z-axis between 1.2 pm and 3 pm. It preferably has a width less than or equal to 4X. Preferably, the width is greater than or equal to X.

[0062] The lower semiconductor portion 132 has a thickness sufficiently small to allow evanescent coupling and sufficiently large for good mechanical strength in line with the long cavities 155. It can be between >710 and X / 5, for example equal to 350 nm when the wavelength X is equal to 4.5 pm.

[0063] The upper semiconductor portion 137 has sufficient thickness so that, in operation, a cavity mode of the quantum cascade laser 1, amplified by the amplifying medium 130, does not interact with the upper electrode 150. For example, it has a thickness between X / 4 and X.

[0064] The coupling section 120.1 includes a diffraction grating 125. The diffraction grating 125 is a periodic grating satisfying the Bragg condition at wavelength X. It may include a phase jump in a central region of the diffraction grating 125, for example equal to ir or ji / 2. The diffraction grating 125 is configured to generate distributed feedback in the amplifying medium 130, i.e., a mode or supermode at wavelength X guided by the amplifying medium 130, interacting with the diffraction grating 125, partially makes round trips along a length of the amplifying medium 130 defining an optical cavity of the quantum cascade laser 1.

[0065] In this example, the diffraction grating 125 comprises a series of teeth extending perpendicularly to the first axis, preferably over the entire width W of the coupling section 120.1. Each tooth is substantially in the shape of a right parallelepiped. They extend into the coupling section 120.1 from its upper face to a depth hr, which may be equal to hc. In [Fig. 1C], a lower edge of a tooth is shown in dashed lines.

[0066] The width W of the coupling section 120.1 is greater than or equal to a minimum width Wmin from which an antisymmetric supermode propagating in a guiding structure comprising the amplifying medium 130 and the main waveguide 120, has a confinement factor in the active region 135 strictly greater than the confinement factors in the active region 135 of the optical modes capable of being guided by the guiding structure.

[0067] In operation, the energy difference between the conduction bands of two adjacent quantum wells is equal to the energy of a photon at wavelength X. Thus, an incident photon from the antisymmetric supermode induces the passage of an electron between the two quantum wells. An additional photon is then emitted by a stimulated emission phenomenon. The additional incident photons have the same energy, the same phase and the same polarization direction, perpendicular to the quantum wells.

[0068] The antisymmetric supermode is guided by the guiding structure. It is progressively diffracted by the diffraction grating 125 so as to make round trips along a length of the guiding structure defining the optical cavity. The modal transition section 120.2 gradually narrows from the coupling section 120.1 to the propagation section 120.3 so as to transfer some of the energy of the antisymmetric supermode to the polarized guided mode, guided by the propagation section 120.3. Thus, the modal transition section 120.2 has a modal conversion function between the antisymmetric supermode and the polarized guided mode. Here, the modal transition section 120.2 participates in the adiabatic coupling between the antisymmetric supermode and the polarized optical mode. The polarized guided mode has its polarization oriented in the same direction as that of the antisymmetric supermode, therefore it is a magnetic transverse (TM) type optical mode.

[0069] Reducing the thickness of the lower semiconductor portion 132 makes it possible to reduce the distance between the proximal and distal positions of the modal transition section 120.2, and thus obtain a more compact quantum cascade laser 1. Increasing the thickness of the lower semiconductor portion 132 makes it possible to decrease its electrical resistance and reduce heating of the quantum cascade laser 1.

[0070] Fig. 2 is a schematic view of a gas sensor 10 comprising a photonic chip and a chamber 220 containing a gas to be analyzed.

[0071] The photonic chip integrates a matrix 200 of at least one quantum cascade laser 1 such as that described in connection with Figures IA, IB, and IC, and a photonic circuit. In [Fig. 2], the matrix 200 contains an integer number n greater than or equal to 3 of quantum cascade lasers li. Here, only the first, second, and nth quantum cascade lasers 1.1, 1.2, ln are shown. In this example, each quantum cascade laser li emits an optical mode TM at a wavelength X; different from the wavelengths of the optical modes emitted by the other quantum cascade lasers.

[0072] The substrate 100, the lower encapsulation layer 110 and the structured layer 115 of a quantum cascade laser li of the matrix 200 are common to all quantum cascade lasers li, and extend throughout the entire photonic chip, so that they are elements of the photonic chip which it is not necessary to distinguish.

[0073] The photonic chip includes a wavelength multiplexer 210, implemented, in part or in whole, in the structured layer 115; that is to say, the structured layer 115 includes part or all of the multiplexer 210. Each propagation section 120.3 of a quantum cascade laser li is optically connected to a separate input of the 210 multiplexer. The 210 multiplexer here is an Arrayed Waveguide Grating (AWG).

[0074] The multiplexer 210 has an output waveguide 230 optically coupled to each of the inputs of the multiplexer 210 and, consequently, to each of the quantum cascade lasers 1. The output waveguide 230 is also optically coupled to the chamber 220. Thus, all the optical modes TM emitted by the quantum cascade lasers li of the matrix 200 are combined in the output waveguide 230 and propagate to the chamber.

[0075] The gas sensor 10 further comprises means for detecting and / or measuring the absorption of photons by the gas at one or more X wavelengths; and / or an acoustic wave generated by the absorption by the gas of one or more optical modes TM emitted by the quantum cascade laser array 200 1. Thus, gas detection or gas concentration measurement can be performed. The gas sensor 10 can, for example, be a non-dispersive infrared gas sensor or a photoacoustic spectrometer, for example, such as chamber 220, which is a Helmholtz differential resonance photoacoustic cell.

[0076] In this example, the structured layer 115 is made of silicon. The lower encapsulation layer 110 has a confinement sublayer of silicon nitride (SiN) or a chalcogenide. Thus, the waveguides of the photonic chip exhibit a strong contrast in refractive indices, and therefore, consequently, reduced dimensions and possibly small radii of curvature. The photonic chip of the gas sensor is therefore compact. The structured layer 115 and / or at least one quantum cascade laser 1 of the matrix 200 can also be encapsulated on an opposite side from the lower encapsulation layer 110 by an upper encapsulation layer, for example, of silicon nitride or a chalcogenide in the amorphous phase.

[0077] Preferably, the main waveguides 120 of the quantum cascade lasers li all have the same height, equal to a common guide height. Advantageously, the waveguide array (AWG) 210 and the output waveguide 230 have heights equal to the common guide height. Thus, the photonic chip is easier to fabricate.

[0078] The quantum cascade laser array 200 is integrated into the photonic chip, thus the gas sensor 10 is compact. Preferably, the chamber 220 includes a portion of the structured layer 115, so as to be integrated into the photonic chip. This further reduces the dimensions of the gas sensor. For example, it can have a footprint smaller than a rectangle with sides of 0.75 cm by 2 cm.

[0079] Now, a parametric study that can be used for the optimization of a quantum cascade laser 1 or a matrix 200 of quantum cascade lasers li according to the invention, will be described in connection with figures 3 to 6.

[0080] A first step in determining a thickness ht of the structured layer 115, measured parallel to the Z axis, will first be described.

[0081] Initially, the width Wa of the active region 135 and the upper semiconductor portion 137 is fixed to a value compatible with the propagation of an optical mode in the amplifying medium 130 at the desired emission wavelength X. Here, X is equal to 4.5 pm and Wa is fixed at 10 pm.

[0082] In a second step, an aspect ratio of the main waveguide 120 is fixed. In this specific study, the main waveguide 120 is an edge waveguide. It has a base and an edge. The edge is a portion of the main waveguide 120 raised relative to the base. It is delimited by the elongated cavities 155. The thickness ht is equal to the sum of the thicknesses of the base and the edge.

[0083] The elongated cavities 155 are intended here to collect reaction products generated by direct bonding of the amplifying medium 130 to the main waveguide 120. They are filled with air. The height hc is fixed at 2 / 3 of the total thickness ht of the structured layer 115.

[0084] Throughout this study, the main waveguide 120 is made of silicon. The lower encapsulation layer 110 is made of silicon nitride (SiN).

[0085] The effective index of a first fundamental optical mode TM of the coupling section 120.1 is then determined, in the absence of the amplifying medium 130, for several thicknesses of the structured layer 115 and several widths W of the edge of the coupling section 120.1. The value of the minimum thickness ht^n of the structured layer 115 is identified, beyond which the effective index of the first fundamental optical mode TM is greater than or equal to the effective index of a second fundamental optical mode TM guided by the amplifying medium 130 in the absence of the main waveguide 120, for a width W less than or equal to a maximum width Wmax attainable by the edge. Wmax is equal to 2*Wa.

[0086] For the following stages of the study, a thickness ht of the structured layer 115 strictly greater than htmin, preferably greater than l,Lhtmin, or even greater than l,2.htmin. Here, htmin is approximately equal to 2pm, and a structured layer 115 with a thickness ht of 2.6pm is chosen.

[0087] A second step of determining a target width Wo of the coupling section 120.1 will now be described.

[0088] Figure 3 shows the evolution of the effective indices of the first fundamental optical mode (C1 curve), the second fundamental optical mode (C0 curve), and Antisymmetric (C3 curve) and symmetric (C2 curve) supermodes, as a function of W in pm. For any thickness of the structured layer 115 strictly greater than ht > min, it was found that the CO and Cl curves bracket and intersect the C3 curve at a single W value equal to Wmin. This is shown in [Fig. 3] for a thickness ht of 2.6 pm. Thus, for any edge width W greater than or equal to Wmin, stimulated emission photons in the active region 135 can excite an antisymmetric mode that is guided by the guiding structure comprising the main waveguide 120 and the amplifying medium 130. Here, Wmin is equal to 2.3 pm. Stimulated emission excites the antisymmetric supermode, rather than the symmetric supermode, because the effective index of the antisymmetric supermode is closer to the effective index of the second fundamental optical mode than the effective index of the symmetric supermode.

[0089] This is confirmed by the simulation results in [Fig. 4]. This figure shows the confinement factor in the active region 135 of the symmetric supermode (CIO curve) and the antisymmetric supermode (Cil curve), as a function of W in pm. Note that the curves intersect at Wmin. The confinement factor of the antisymmetric supermode is strictly greater than that of the symmetric supermode for any edge width W strictly greater than Wmin. Thus, the antisymmetric supermode is preferentially amplified by stimulated emission and silences the symmetric supermode.

[0090] The confinement factor of a supermode in the active region 135 is equal to the ratio of the intensity of the part of the supermode located inside the active region 135 to the total intensity of the supermode.

[0091] In [Fig. 5], the coupling strength Kr of the diffraction grating 125 was calculated for the symmetric supermode (curve C20) and the antisymmetric supermode (curve C21), as a function of W in pm. Here, the teeth of the diffraction grating 125 extend perpendicularly to the X-axis over the entire width W of the coupling section 120.1. For this calculation, the depth hr is sufficiently large that the evanescent part of the antisymmetric supermode does not couple to the main waveguide 120 between two teeth of the diffraction grating 125. Here, hr is equal to hc.

[0092] The coupling strength Kr of a grating is a measure of the energy transfer per unit length from a propagating mode or supermode diffracted by the grating to a counter-propagating mode or supermode resulting from the diffraction. Kr is given by the formula: ... _ , where is equal to the difference in effective indices of the mode or supermode at the level of a lattice tooth and between two lattice teeth. Thus, Kr increases when W or hr increase.

[0093] In the context of the DFB type quantum cascade laser, Kr is related to the reflectivity Rr of the 125 diffraction grating by the relation Rr - tanh2 ( K,Lr ), where Lr is the half-length of the 125 diffraction grating measured parallel to the X-axis. A DFB type quantum cascade laser is considered to be sufficiently efficient or to have sufficient yield if Rr is between 0.65 and 0.8, which corresponds to a Kr.Lr product between 1 and 1.4.

[0094] It is considered that a half-length Lr of the diffraction grating 125 of between 0.5 mm and 1 mm allows for a sufficiently compact quantum cascade laser 1. For a half-length Lr of 0.5 mm, values ​​for W and hr will therefore preferably be chosen to obtain a coupling force Kr of between 20 cm₁ and 28 cm₂'. For a half-length Lr of 1 mm, values ​​for W and hr will preferably be chosen to obtain a coupling force Kr of between 10 cm₁ and 14 cm₁.

[0095] In the second step, the target width Wo of the coupling section 120.1 is determined from [Fig. 5] within the previously established range of values ​​[Wmin, Wmax], thus obtaining a predefined target coupling force Kr0. In the particular example of [Fig. 5], a value W between 3.2 pm (Kr = 10 cm1) and 4.8 pm (Kr = 28 cm1) yields a target coupling force Kr>0, enabling the creation of a compact and efficient quantum cascade laser 1.

[0096] A third step of determining a target tooth depth hr0 of the diffraction grating 125 will be described.

[0097] In [Fig. 6], the coupling force Kr (ordinate axis, in cm⁻¹) is plotted as a function of the depth hr of the teeth of the diffraction grating 125 (abscissa axis, in pm), for W equal to 5.75 pm (curve C30) and W equal to 7 pm (curve C31). Curves C30 and C31 are increasing. It was found that the coupling force Kr tends asymptotically towards a maximum value Kr>max as hr increases. More precisely, the increase in Kr remains within an acceptable range of variation beyond a minimum tooth depth hrmin, independent of the width W of the edge of the coupling section 120.1. The acceptable range of variation is determined to ensure compliance with a specification of a parameter of the quantum cascade laser 1. The specification may be a range of variation of the reflectivity of the diffraction grating 125 to be respected, for example equal to 2%.

[0098] The value of hrmin is then identified, and a target tooth depth hr>0 is determined to be strictly greater than hr>min. Preferably, the difference between hr>0 and hr>min is greater than a depth uncertainty experienced during an etching process used to form the diffraction grating 125, preferably twice greater than the uncertainty. The minimum tooth depth can depend on several factors, including the X wavelength and the thickness of the lower semiconductor portion 132.

[0099] In this example, hrmin is equal to 100 nm, allowing the increase in the coupling force Kren to be kept below 20% of its value for a tooth depth equal to hrmin; this is to ensure sufficient reflectivity of the diffraction grating 125. The target tooth depth hr>0 is for example chosen to be equal to 180 nm.

[0100] The inventors have verified that a variation in tooth depth hr has no significant influence on the results obtained in Figures 3 and 4, provided that hr is greater than hrmin. Thus, it is not necessary to adjust the value of the target width Wo established in the second step, since the coupling forces of [Fig. 5] were established for a tooth depth greater than or equal to hrmin.

[0101] In a fourth step, using conventional substeps from the integrated photonics industry, the quantum cascade laser is manufactured so as to produce a coupling section 120.1 of width Wo and a diffraction grating 125 comprising teeth of depth hr>0, up to manufacturing uncertainties.

[0102] One of the substeps includes the direct bonding of a stack of semiconductor layers comprising elements from columns III and V of the periodic table of elements, onto the structured layer 115. At least part of the stack is intended to be the amplifying medium 130 of the quantum cascade laser 1. The choice of exciting an antisymmetric supermode of the guiding structure makes it possible to obtain a width W of the coupling section 120.1 large enough so that the operation of the quantum cascade laser 1 is not impacted by an uncertainty in the alignment of the stack with respect to the structured layer 115, during this direct bonding substep.

[0103] The width W of the coupling section 120.1 is also sufficiently large to establish efficient heat transfer from the amplifying medium 130 to the main waveguide 120, when the quantum cascade laser 1 is in operation.

[0104] The inventors have found that the larger the width W of the coupling section 120.1, the less uncertainty in the value of W resulting from the fabrication of the quantum cascade laser 1 is likely to impact the coupling force Kr of the antisymmetric supermode with the diffraction grating 125. In all cases, a variation in the width W induces a smaller error in the coupling force Kr obtained with respect to the target coupling force Kr 0 with a guiding structure configured to guide an antisymmetric supermode, compared to a guiding structure configured to guide a symmetric supermode.

[0105] Finally, since the width W of the coupling section 120.1 is large and the antisymmetric supermode is of type TM, the latter is only weakly diffracted by the roughness of the flanks of the coupling section 120.1. This makes it possible to reduce intra-cavity losses of the quantum cascade laser 1.

[0106] Specific embodiments have just been described. Various variants and modifications will be apparent to those skilled in the art.

Claims

1.

2. Demands Quantum cascade laser (1) for emitting a magnetic transverse polarized optical mode at an X wavelength between 3 pm and 15 pm, comprising: • a semiconductor amplifying medium (130) comprising an active region (135), • a main waveguide (120) extending parallel to the active region (135) and comprising: • a coupling section (120.1) in contact with the amplifying medium (130), comprising a diffraction grating (125) configured to generate a distributed feedback in the amplifying medium (130) at the wavelength X, • a propagation section (120.3) separated from the amplifying medium (130), suitable for guiding the optical mode, the quantum cascade laser (1) being such that • the coupling section (120.1) has a width W greater than or equal to a minimum width Wmin from which an antisymmetric supermode propagating in a laser guiding structure comprising the amplifying medium (130) and the main waveguide (120), has a confinement factor in the active region (135) strictly greater than the confinement factors in the active region (135) of the optical modes capable of being guided by the guiding structure, • the main waveguide (120) has a core of a material based on atoms from column IV A of the periodic table of elements and a confinement sub-layer of silicon nitride or a chalcogenide, on one side of the main waveguide (120) opposite the amplifying medium (130). Quantum cascade laser (1) according to claim 1, wherein the main waveguide (120) further comprises a modal transition section (120.2) in contact with the amplifying medium (130), extending from the coupling section (120.1) to the section of propagation (120.3), gradually narrowing from the coupling section (120.1) to the propagation section (120.3) so as to ensure a modal conversion between the antisymmetric supermode and the optical mode.

3. Quantum cascade laser (1) according to claim 1 or 2, wherein the amplifying medium (130) comprises a lower semiconductor portion (132) in contact with the main waveguide (120) and an upper semiconductor portion (137), both N-doped, the active region (135) being intercalated between the lower and upper semiconductor portions (132, 137).

4. Quantum cascade laser (1) according to claim 3, wherein the active region (135) and the upper semiconductor portion (137) each and together have a right parallelepiped shape.

5. Quantum cascade laser (1) according to any one of the preceding claims, wherein the diffraction grating (125) has teeth, each of depth hr, the width W and the depth hr being such that the diffraction grating (125) has a coupling force Kr of between 5 cm' and 100 cm1, preferably of between 10 cm1 and 28 cm1.

6. Quantum cascade laser (1) according to any one of the preceding claims, wherein the diffraction grating (125) has teeth, each of depth hr, the depth hr being greater than a minimum depth hrmin enabling a variation of a coupling force Kr of the diffraction grating (125) as a function of hr to be contained within an acceptable range of variation determined to ensure compliance with a specification of the quantum cascade laser (1).

7. Gas sensor (10) comprising a photonic chip, a chamber (220) optically coupled to the photonic chip, the photonic chip comprising a quantum cascade laser (1) according to any one of the preceding claims, integrated into the photonic chip.

8. Gas sensor (10) according to claim 7, wherein the quantum cascade laser (1) is an element of an array (200) of several quantum cascade lasers (li) according to any one of claims 1 to 6, each quantum cascade laser (li) of the array (200) being configured to emit an optical mode at a wavelength X; different from the wavelengths of the modes

9.

10.

11. optics emitted by the other quantum cascade lasers (li) of the (200) matrix. Gas sensor (10) according to claim 8, wherein the photonic chip comprises a wavelength multiplexer (210) and a structured layer (115), and such that: • each propagation section (120.3) of a quantum cascade laser (li) of the matrix (200) is optically connected to a separate input of the multiplexer (210), • The multiplexer (210) includes an output waveguide (230) optically coupled to each of the inputs of the multiplexer (210), and to the chamber (220), • the structured layer (115) includes the multiplexer (210), the output waveguide (230) and each of the main waveguides (120) of the quantum cascade lasers (li) of the matrix m (200). Gas sensor according to claim 9, wherein the structured layer (115) further comprises at least a portion of the chamber (220). Gas sensor according to any one of claims 7 to 10, wherein the chamber (220) is a Helmholtz differential resonance photoacoustic cell.

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