A useful method for detecting and / or quantifying any noble metal on the surface of an indium phosphide (InP) substrate.

Abstract

A useful method for detecting and / or quantifying any noble metal on the surface of an indium phosphide (InP) substrate. The invention relates to a useful method for detecting and / or quantifying any noble metal on the surface of an indium phosphide (InP) substrate, comprising at least the following steps: a) contacting the InP of said substrate with an iodine solution further comprising at least one non-iodine oxidizing agent other than hydrogen peroxide for dissolving said noble metal, if present, in said solution; b) recovering said solution carried out in a); c) where applicable, repeating a) and b) with an iodine solution free of noble metal; and d) analyzing the solution recovered in b), and where applicable in c), by inductively coupled plasma mass spectrometry. Figure for the abstract: None

Description

Title of the invention: A useful method for detecting and / or quantifying any noble metal on the surface of an indium phosphide (InP) substrate. Technical field

[0001] The present invention relates to the characterization of noble metals, contaminants likely to be present on the surface of substrates formed of an indium phosphide type material. Previous technique

[0002] The production of a microelectronic device involves a sequence of numerous steps and is subject to the appearance of defects or imperfections. These defects include, in particular, the uncontrolled and unwanted presence of contaminants, especially metallic ones. These contaminants are in particular noble metals such as gold Au, silver Ag, ruthenium Ru, rhodium Rh, palladium Pd, osmium Os, iridium Ir and platinum Pt.

[0003] For obvious reasons, it is important to be able to significantly minimize this type of contamination in microelectronic devices and therefore to have effective control tools in this regard.

[0004] Generally, the characterization of such metallic contamination is carried out on silicon substrate surfaces by total X-ray reflection fluorescence (TXRF) spectrometry and by vapor phase decomposition coupled with inductively coupled plasma mass spectrometry (ICP-MS or VPD-ICP-MS). These techniques provide very good limits of detection (LLDs) ranging from 10⁸ to 10¹¹ atoms per square centimeter for most standard and precious metal contaminants.

[0005] TXRF technology also allows the detection and / or quantification of most metallic contaminants on indium phosphide substrate surfaces. However, LLDs remain less effective than those obtained on silicon substrates. This is due to the interference of numerous indium lines from the InP substrate with metallic contaminant lines, between 2 and 5 keV, and an increase in spectral background noise. Interference is particularly noticeable during the characterization of silver, whose analyzed lines are around 3 keV, as this element is not quantifiable below 10¹⁴ at / cm².

[0006] Furthermore, VPD-ICP-MS analysis is not possible on indium phosphide substrate surfaces since ITnP is hydrophilic: the collection of contamination by a drop of acid is not possible, and furthermore, the VPD equipment would be contaminated with indium.

[0007] An alternative to VPD-ICP-MS analysis is liquid-phase decomposition coupled with ICP-MS, or LPD-ICPMS (Liquid Phase Decomposition-Inductively coupled Plasma Mass Spectroscopy), the effectiveness of which has only been validated for collecting standard elements, and therefore elements other than a noble metal, from an InP substrate surface. A 1 mol% HNO3 solution, in particular, achieved a collection rate of such standard elements exceeding 90%. This same solution was tested for analyzing noble elements, but in this case, the collection rate was close to 0%.

[0008] Consequently, to the inventors' knowledge, there is currently no effective and secure method for controlling the possible presence of noble metals such as silver Ag, or even for quantifying them, on indium phosphide InP substrates.

[0009] The present invention is specifically designed to meet this expectation. Description of the invention

[0010] The invention thus relates to a useful method for detecting and / or quantifying any noble metal on the surface of an indium phosphide (InP) substrate, comprising at least the following steps: a) bringing the indium phosphide InP of said substrate into contact with an iodine solution further comprising at least one non-iodine oxidizing agent other than hydrogen peroxide to dissolve said noble metal, if present, in said solution; b) the recovery of said solution having been carried out in step a); c) where appropriate, the repetition of steps a) and b) with an iodine solution free of noble metal and further comprising at least one non-iodinated oxidizing agent other than hydrogen peroxide; and d) analysis by inductively coupled plasma mass spectrometry (ICPMS) of the solution recovered in b), and where applicable in c). Summary of the invention

[0011] Thus, the inventors have found that it is possible to efficiently collect noble metals on the surface of an indium phosphide (InP) type material by chemical means, and more particularly using an iodine solution according to the invention.

[0012] Admittedly, it is already known to treat InP surfaces with oxidizing solutions, but essentially for the purpose of chemically etching InP and therefore for a very different objective from that envisaged according to the invention. Furthermore, the oxidizing solutions used for this purpose are different from those of the invention. Thus, publication [1] describes the chemical etching of InP using HC1:CH3COOH:H solutions. 2O2. An undesirable and dangerous release of phosphine is also observed under the recommended conditions (Notten PHL 1984. This Journal, 131, 2641). For its part, publication [2] describes the chemical etching of InP with iodic acid (HIO3) solutions of varying concentrations.

[0013] As can be seen from the examples below, the process according to the invention advantageously allows for a collection rate exceeding 93% for a short collection time, without the release of phosphine. The process according to the invention therefore allows for the reliable and risk-free qualification, and even quantification, of such contaminants.

[0014] According to another aspect of it, the present invention relates to a method for cleaning an indium phosphide substrate contaminated by at least one noble metal, comprising the repeated or non-repeated contact of the indium phosphide InP of said substrate with an iodine solution free of noble metal and further comprising at least one non-iodine oxidizing agent other than hydrogen peroxide under conditions conducive to the dissolution of said noble metal, if present, in said solution. Detailed description

[0015] As can be seen from the above, the process according to the invention comprises at least one collection step and, subsequently, an analysis step.

[0016] In particular, this first step is a liquid chemical collection step, also known as LPD.

[0017] More specifically, it is based on bringing the indium phosphide of the substrate to be characterized into contact with a specific iodine solution.

[0018] The inventors have indeed discovered that an iodine solution supplemented with a non-iodine oxidizing agent different from hydrogen peroxide proves to be particularly effective in ensuring the collection of almost all of the noble metals present on the surface of such a material, and this in a reduced time. Iodine solution

[0019] For the purposes of the invention, an iodine solution is a solution comprising at least diiodine and / or at least an alkali metal iodide.

[0020] Advantageously, the alkali metal iodide is at least potassium iodide.

[0021] In particular, the iodine solution comprises a diiodine content ranging from 0.001% to 15%, preferably from 0.01% to 10%, more preferably from 0.05% to 5%.

[0022] In particular, the iodine solution comprises an alkali metal iodide content ranging from 0.001% to 15%, preferably from 0.01% to 12%, more preferably from 0.05% to 10%.

[0023] By way of illustration and not limitation of such an iodine solution, one may in particular be cited that containing from 0.001% to 15% in diiodine and from 0.001% to 15% in potassium iodide.

[0024] In the context of the present invention, this iodine solution further comprises at least one non-iodine oxidizing agent other than hydrogen peroxide.

[0025] Advantageously, this non-iodized oxidizing agent according to the invention is selected from potassium iodate KIO3, iodic acid HIO3, nitric acid HNO3, and mixtures thereof, preferably comprising at least nitric acid HNO3.

[0026] According to a preferred embodiment, this iodine solution contains at least nitric acid.

[0027] As can be seen from the examples below, the presence of the latter, which alone is ineffective in dissolving noble metals, proves capable of significantly stimulating the effectiveness of an iodine solution.

[0028] Preferably, the iodine solution comprises a content of non-iodinated oxidizing agent other than hydrogen peroxide, preferably nitric acid HNO3, ranging from 0.001% to 10%, preferably from 0.01% to 5%, more preferably from 0.05% to 2.5%.

[0029] By way of illustration and not limitation of an iodine solution according to the invention, one may in particular be cited that containing from 0.001 to 15% in diiodine, from 0.001% to 15% in potassium iodide and from 0.001% to 10% in nitric acid.

[0030] As can be seen from the examples below, such a solution proves to be particularly optimal for ensuring an efficient collection rate of noble metals, if present, and therefore for guaranteeing good reliability of the claimed characterization method.

[0031] The duration of contact of the surface of the substrate with the iodine solution is generally less than or equal to 15 minutes, preferably varies from 30 seconds to 10 minutes, more preferably from 1 to 5 minutes, better it is 5 minutes.

[0032] According to one embodiment, the contacting step is repeated one or more times with an iodine solution free of noble metal. In other words, an iodine solution according to the present invention, having already been used in step a), is not used for a second collection. A rinsing and / or drying step may optionally be carried out between the contacting steps.

[0033] According to one embodiment, rinsing is carried out with deionized water.

[0034] The second step of the process of the invention is based on the implementation of an analysis by inductively coupled plasma mass spectrometry (ICP-MS) of the solution(s) recovered after at least one contact with the surface to be characterized in contaminating noble metals.

[0035] The invention will now be described by means of the following examples, given of course by way of illustration and not limitation of the invention. Materials and methods

[0036] New indium phosphide wafers of diameter 100 mm are intentionally contaminated by spin-drying in order to simulate surface contamination of the metals Ag, Au and Pt.

[0037] The intentional contamination concentrations are between 10¹² and 10¹³ at / cm² and are calculated using contamination charts. These deposited Au and Pt concentrations are monitored by TXRF, which is possible because there is no interference between the spectral lines of these metals and the In lines. Finally, the wafers are left to dry for 24 hours.

[0038] A portable PH3 phosphine detector of the DRAEGER X-AM5100 or DRAEGER 7000 type was used to detect and / or control phosphine releases during the collection step. Example 1

[0039] Treatment of an InP substrate according to the invention and outside the invention

[0040] Two iodine solutions are prepared from diiodine and potassium iodide: - iodine solution 1: I2 content of 2.6% and Kl content less than 10%; - iodine solution 2: I2 content of 0.26% and Kl content less than 1%.

[0041] Nitric acid HNO3 is added to iodine solution 1 at a concentration of 2%, nitric acid HNO3 is added to iodine solution 2 at a concentration of 0.1%.

[0042] A third comparative iodine solution is prepared from diiodine (content of 2.6%) and potassium iodide (content less than 10%).

[0043] These three solutions are tested on a new indium phosphide wafer contaminated with Ag, Au and Pt as detailed above.

[0044] Each solution is brought into contact with a new indium phosphide strip for 5 minutes, then a portion of this solution is withdrawn. The indium phosphide strip is rinsed with deionized water and then dried. This procedure is then repeated twice, each time with a new batch of the initially considered iodine solution.

[0045] Three successive LPDs are therefore performed on each InP wafer in order to calculate the collection rate, defined according to the following equation:

[0046] C1 / (C1+C2+C3) xlOO

[0047] with Cl the concentration measured via ICP-MS for collection by LPD number 1, C2 the concentration measured via ICP-MS for collection by LPD number 2, C3 the concentration measured via ICP-MS for collection by LPD number 3.

[0048] The solutions obtained at the collection are analyzed by ICP-MS (ICPMS 7900 Agilent).

[0049] Table 1 below shows the collection rates obtained. It also specifies results obtained with a comparative collection solution containing only nitric acid.

[0050] [Tables 1] Solutions Collection Rate (%) Ag Au Pt Solution h at 2.6% + Kl [<10%] 4- HNO3 2% (invention) 99 99 99 Solution Ij at 0.26% Kl [<1%] -r HNO3 0.1¾ (invention) 98 97 94 Solution 12 at 2.6% + Kl [<10%] (comparative) 77 55 68 Solution HNO3 at 5% (comparative) <10 <10 <10

[0051] From these data, it appears that only collection solutions conforming to the invention prove effective, firstly, for all the noble metals present on the treated surface, and secondly, in terms of collection rates since these are greater than 94% for each of the noble metals.

[0052] It is also noted that nitric acid alone is ineffective, even at a higher concentration than the concentration of nitric acid in each of the solutions according to the invention.

[0053] As for the iodine solution not supplemented with nitric acid, it does not prove to be equally effective with regard to the 3 noble metals, and the collection rates obtained are much lower than those obtained with the collection solutions according to the invention.

[0054] It appears that the presence of nitric acid, which is very ineffective on its own, significantly stimulates the activity of the iodine solution. List of documents cited

[0055] [1] Flemish JR, Jones KA 1993. Selective Wet Etching of GalnP, GaAs and InP in Solutions of HCl, CH3COOH, and H2O2, J. Electrochem. Soc., 140, 844.

[0056] [2] Sundararaman CS, Mouton A., Currie JF 1990. Chemical Etching of InP. International Conference on Indium Phosphide and Related Materials, Denver, CO, USA, 224-227.

[0057] [3] Hiromu Ishii, Shouji Yagi, Tadashi Minotani, Yakov Royter, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, and Hakaru Kyuragi. 2001. Gold damascene interconnect technology for millimeter-wave photonics on Silicon, Micromachining and Microfabrication Process Technology VII, Proc. SPIE, Vol. 4557, 210-219.

Claims

Demands

1. A useful method for detecting and / or quantifying any noble metal on the surface of an indium phosphide (InP) substrate, comprising at least the following steps: a) contacting the indium phosphide InP of said substrate with an iodine solution further comprising at least one non-iodine oxidizing agent other than hydrogen peroxide for dissolving said noble metal, if present, in said solution; b) recovering said solution carried out in step a); c) where appropriate, repeating steps a) and b) with an iodine solution free of noble metal and further comprising at least one non-iodine oxidizing agent other than hydrogen peroxide; and d) analyzing the solution recovered in b) and where appropriate in c) by inductively coupled plasma mass spectrometry (ICPMS).

2. A method according to the preceding claim, wherein the iodine solution is a solution comprising at least diiodine and / or at least one alkali metal iodide.

3. A method according to the preceding claim, wherein the alkali metal iodide is at least potassium iodide.

4. A method according to any one of the preceding claims, wherein the iodine solution comprises a diiodine content from 0.001% to 15%, preferably from 0.01% to 10%, more preferably from 0.05% to 5%.

5. A process according to any one of the preceding claims, wherein the iodine solution comprises an alkali metal iodide content of 0.001% to 15%, preferably 0.01% to 12%, more preferably 0.05% to 10%.

6. A process according to any one of the preceding claims, wherein the non-iodized oxidizing agent, other than hydrogen peroxide, is selected from potassium iodate KIO3, iodic acid HIO3, nitric acid HNO3, and mixtures thereof, preferably comprising at least nitric acid HNO3.

7. A method according to any one of the preceding claims, wherein the iodine solution comprises a diiodine content of 0.001 to 15%, preferably 0.01 to 10%, more preferably 0.05 to 5%; an iodide content of potassium ranging from 0.001% to 15%, preferably from 0.01% to 12%, more preferably from 0.05% to 10%; a nitric acid (HNO3) content ranging from 0.001% to 10%, preferably from 0.01% to 5%, more preferably from 0.05% to 2.5%.

8. A method for cleaning an indium phosphide substrate contaminated by at least one noble metal, comprising contacting, repeatedly or not, the indium phosphide InP of said substrate with an iodine solution free of noble metal and further comprising at least one non-iodine oxidizing agent other than hydrogen peroxide for dissolving said noble metal, if present, in said solution.