Switch

Abstract

Switch This description concerns a control device (Driv131, Driv132) for a switch (130) comprising: - a first control circuit (Driv131) of said switch (130) referenced to a first terminal (N110) adapted to receive an alternating potential, formed on a first substrate, and comprising a first diode whose cathode is connected to said first substrate; - a second control circuit (Driv132) referenced to a second terminal (GND100) adapted to receive a reference potential, formed on a second substrate, and comprising a second diode whose cathode is connected to said second substrate; wherein the anode of said first diode is connected to said second control circuit (Driv132), and the anode of said second diode is connected to said first control circuit (Driv131). Figure for the abbreviation: Fig. 1

Description

Title of the invention: Switch technical field

[0001] This description relates generally to electronic systems and devices, and to the power supply of these systems and devices using an alternating voltage. This description relates in particular to a switch adapted to control the power supply of a load by an alternating voltage. Previous technique

[0002] The use of alternating voltage to power an electrotechnical or electronic device, called a load, is very common. Indeed, the domestic power grid supplies alternating voltage.

[0003] There are control switches adapted to control the supply of an alternating voltage to a load. More precisely, such a switch is connected in series with the load and allows it to be connected to or disconnected from a power supply providing an alternating voltage.

[0004] It would be desirable to be able to improve, at least in part, certain aspects of known control switches. Summary of the invention

[0005] There is a need for electronic devices and systems that are reliably powered by alternating voltage.

[0006] There is a need for switches adapted to reliably control the supply of alternating voltages to electronic systems and devices.

[0007] There is a particular need for bidirectional voltage and current switches to reliably control the power supply of an electronic device by an alternating voltage.

[0008] An embodiment overcomes all or part of the disadvantages of known electronic devices and systems powered by an alternating voltage.

[0009] One embodiment, in particular, overcomes all or part of the disadvantages of known switches adapted to control the supply by an alternating voltage of an electronic system or device.

[0010] One embodiment provides a bidirectional voltage and current switch.

[0011] One embodiment provides a bidirectional switch comprising two thyristors arranged in antiparallel, each controlled by its own control circuit.

[0012] One embodiment provides an electronic control device for a switch comprising: - a first terminal adapted to receive an alternative potential; - a second terminal adapted to receive a reference potential; - a first control circuit for said switch referenced to said first terminal, formed on a first substrate, and comprising a first diode whose cathode region is connected to said first substrate; - a second control circuit for said second thyristor referenced to said second terminal formed on a second substrate different from the first substrate, and comprising a second diode whose cathode region is connected to said second substrate; in which an anode region of said first diode is connected to said second driver circuit, and an anode region of said second diode is connected to said first driver circuit.

[0013] According to one embodiment, said first control circuit includes a first control transistor for said switch, and said anode region of said second diode is connected to a drain terminal of said first transistor.

[0014] According to one embodiment, said second control circuit includes a second control transistor for said switch, and said anode region of said first diode is connected to a drain terminal of said second transistor.

[0015] According to one embodiment, said first and second transistors are MOS type transistors.

[0016] According to one embodiment, said first and second diodes are parasitic diodes of third MOS-type transistors.

[0017] According to one embodiment, said first and second diodes are substrate diodes of third transistors.

[0018] According to one embodiment, said first and second diodes are intrinsic diodes of said third transistors whose source terminals are connected to their substrate terminals.

[0019] According to one embodiment, said first and second diodes are diodes laterally isolated by deep insulation trenches.

[0020] According to one embodiment, said first control circuit includes a power supply circuit connected to said first terminal.

[0021] Another embodiment provides a switch comprising: - a control system described previously; - a first thyristor whose cathode is connected to said first terminal, and whose anode is connected to said second terminal, and adapted to be driven by said first control circuit; and - a second thyristor whose anode is connected to said first terminal, and whose cathode is connected to said second terminal and adapted to be driven by said second control circuit.

[0022] According to one embodiment, said first transistor includes a source terminal connected to the gate of said first thyristor.

[0023] According to one embodiment, said second transistor includes a source terminal connected to the gate of said second thyristor.

[0024] Another embodiment provides for an electronic device comprising a load adapted to receive an alternating voltage and a switch described above, in which a third terminal of said load is connected to said first terminal.

[0025] Another embodiment provides for an electronic system comprising a device described above and a power supply adapted to provide an alternating voltage.

[0026] Another embodiment provides a method for controlling a load supplied by a power supply adapted to provide an alternating voltage, in which said load is connected to said power supply by a switch, said switch comprising: - a first terminal adapted to receive an alternative potential; - a second terminal adapted to receive a reference potential; - a first thyristor whose cathode is connected to said first terminal, and whose anode is connected to said second terminal; - a first control circuit for said switch referenced to said first terminal, formed on a first substrate, and comprising a first diode whose cathode region is connected to said first substrate; - a second control circuit for said second thyristor referenced to said second terminal formed on a second substrate different from the first substrate, and comprising a second diode whose cathode region is connected to said second substrate; in which an anode region of said first diode is connected to said second driver circuit, and an anode region of said second diode is connected to said first driver circuit. Brief description of the drawings

[0027] These features and advantages, as well as others, will be described in detail in the following description of particular embodiments, given by way of non-limiting example, in relation to the accompanying figures, among which:

[0028] [Fig.1] represents an electronic system comprising a switch according to one embodiment;

[0029] Figure 2 represents, in more detail, an electronic system comprising a switch according to one embodiment; and

[0030] Figure 3 shows a cross-sectional view of part of a MOS transistor; and

[0031] Fig. 4 represents a cross-sectional view of a diode. Description of the implementation methods

[0032] Similar elements have been designated by the same reference numerals in the different figures. In particular, structural and / or functional elements common to the different embodiments may have the same reference numerals and may have identical structural, dimensional and material properties.

[0033] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been represented and are detailed.

[0034] Unless otherwise specified, when referring to two elements connected together, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") together, this means that these two elements can be connected or linked through one or more other elements.

[0035] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "superior", "inferior", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0036] Unless otherwise specified, the expressions "approximately", "roughly", and "in the order of" mean within 10%, preferably within 5%.

[0037] The embodiments described below relate to the supply of an alternating voltage, such as a voltage supplied by the household network, also known as the mains, to electronic systems and devices. The embodiments covered by this description relate more particularly to a switch adapted to control the power supply of an electromechanical or electronic device. The switch in question is a bidirectional voltage and current switch comprising two thyristors arranged in antiparallel, each controlled by its own driver circuit. The general diagram of such a switch is described with reference to [Fig. 1], and a particular example of this switch is described with reference to [Fig. 2]. Unlike other switches on the market, this switch has the advantage of not exhibiting the problem of uncontrolled conduction when the sign of the alternating current changes.To achieve this, the control circuits adapted to operate the switch use diodes cleverly arranged to protect against reverse polarity. This is described in detail with reference to Figures 2 and 3.

[0038] Furthermore, the embodiments described below are particularly suitable for use in the field of industrial electronic devices such as ovens industrial (bakery oven, oven intended for large-scale baking), industrial motors, in particular their starting circuits which can draw high currents, static relays as switches adapted to high voltages, for example voltages of around 400 V and high currents, for example currents greater than 1 A and up to a few tens of amps.

[0039] Moreover, more generally, the embodiments described above are particularly suitable for use in any type of industrial market where powering electronic devices with alternating voltages is required. More specifically, such a switch can be intended for industrial applications, for example in the field of green energy, infrastructure electrification, the Internet of Things (IoT), and smart homes, where electricity and energy consumption is a key factor.

[0040] Fig. 1 represents an embodiment of an electronic system 100.

[0041] In one embodiment, the electronic system 100 includes a load 110 representing the part of the electronic system 110 that is intended to be powered by a power supply 120. In one example, the load 110 is an electrotechnical device. The system 100 further includes an embodiment of a switch 130 adapted to control the current and voltage supply to the load 110 by the power supply 120.

[0042] According to one embodiment, the 120 power supply is an alternating voltage source adapted to provide an alternating VAC120 voltage to power the electronic device 110.

[0043] To form the system 100, these different elements are assembled as follows. A first terminal of the power supply 120 is connected, preferably connected, to a first terminal of the load 110. A second terminal of the power supply 120 is connected, preferably connected, to a GND100 node forming a reference node of the system 100 and providing a reference potential, for example, ground. A second terminal of the load 110 is connected, preferably connected, to a NI node 10. A first terminal of the switch 130 is connected, preferably connected, to the NI node 10, and a second terminal of the switch 130 is connected, preferably connected, to the reference node GND100.

[0044] According to one embodiment, the switch 130 is a bidirectional voltage and current switch. The switch 130 comprises two thyristors T131 and T132 and their driver circuits Drivl31 and Drivl32. The thyristors T131 and T132 are connected in antiparallel between nodes NI 10 and GND100. More specifically, one cathode terminal of thyristor T131 is connected, preferably connected, to node NI 10, and one anode terminal of thyristor T132 is connected, preferably connected, to node NI 10. GND100. One cathode terminal of thyristor T132 is connected, preferably connected, to node GND100, and one anode terminal of thyristor T132 is connected, preferably connected, to node NI 10.

[0045] The Drivl31 control circuit is intended to drive the T131 thyristor. To this end, the Drivl31 control circuit includes an output terminal connected, preferably connected, to a gate terminal of the T131 thyristor. The Drivl31 control circuit is referenced by node NI 10 and is powered by a potential supplied by a NUL node.

[0046] The Drivl32 driver circuit is intended to drive the T132 thyristor. To this end, the Drivl32 driver circuit includes an output terminal connected, preferably connected, to a gate terminal of the T132 thyristor. The Drivl32 driver circuit is powered by a VDD100 node providing a DC supply voltage, and is referenced to the GND100 reference node.

[0047] In one embodiment, the Drivl31 and Drivl32 driver circuits are both integrated on two different chips with different substrates, each substrate being referenced to a different reference potential. More specifically, the substrate of the Drivl31 driver circuit is referenced to node NI 11, which provides an alternating potential, and the substrate of the Drivl32 driver circuit is referenced to node GND100. In one embodiment, the two chips in which the Drivl31 and Drivl32 driver circuits are integrated are then assembled in a single package to form a single circuit that can be called a driver device. In another variant, the two chips of the Drivl31 and Drivl32 driver circuits, as well as the two chips of the T131 and T132 thyristors, can be assembled in a single package forming the switch 130.

[0048] The system 100, and in particular the switch 130 of the device 110, has an improvement enabling it to avoid problems of unwanted conduction at the time of the change of sign of the alternating current in the load 110. Such problems are known in certain switches, such as triacs. This improvement is described in detail with reference to [Fig. 1].

[0049] A method for controlling the power supply to a load within the system 100 is as follows. When the load 110 is operating and needs to be powered, the switch 130 is made conductive. To achieve this, the control circuits Drivl31 and Drivl32 send a control current pulse to the thyristors T131 and T132. The thyristors T131 and T132 remain conductive as long as a current flows through them. When the load 110 is not operating and does not need to be powered, the switch 130 is made non-conductive. To achieve this, the thyristors T131 and T132 are made non-conductive by not sending them any control current pulse.

[0050] Thus, the embodiments described here relate to a system of the type of system 100, a switch of the type of switch 130, and a control device comprising control circuits of the type of control circuits Drivl31 and Drivl32. The embodiments described here also relate to a method for controlling the supply of a load.

[0051] Fig. 2 represents an embodiment of an electronic system 200 comprising a load 210 adapted to be powered by an electrical supply 220 and whose supply is adapted to be controlled by an embodiment of a switch 230.

[0052] According to one embodiment, the load 210 is of the type of the load 110 described in relation to [Fig. 1]. Similarly, the power supply 220 is of the type of the power supply 120 described in relation to [Fig. 1], and provides an alternating supply voltage VAC220. Finally, the switch 230 is of the type of the switch 130 described in relation to [Fig. 1].

[0053] The switch 230 includes a first terminal connected, preferably connected, to a node N201 which is itself connected, preferably connected, to a terminal of the load 210. The switch 230 further includes a second terminal which is connected, preferably connected, to a reference node GND200 of the system 200.

[0054] According to one embodiment, like switch 130, switch 230 is a bidirectional voltage and current switch. Switch 230 comprises two thyristors T231 and T232 and their driver circuits Driv231 and Driv232. Thyristors T231 and T232 are connected in antiparallel between nodes N201 and GND200. More specifically, one cathode terminal of thyristor T231 is connected, preferably connected, to node N201, and one anode terminal of thyristor T231 is connected, preferably connected, to node GND200. One cathode terminal of thyristor T232 is connected, preferably connected, to node GND200, and one anode terminal of thyristor T232 is connected, preferably connected, to node N201.

[0055] In one embodiment, the Driv231 and Driv232 driver circuits are both integrated on two different chips with different substrates, each substrate being referenced to a different reference potential. More specifically, the substrate of the Driv231 driver circuit is referenced to node N201, which provides an alternating potential, and the substrate of the Driv232 driver circuit is referenced to node GND200. In another embodiment, the two chips in which the Driv231 and Driv232 driver circuits are integrated are then assembled in a single package to form a single circuit that can be called a driver device. In a variant, the two chips of the Driv231 and Driv232 driver circuits, as well as the two chips of the T231 and T232 thyristors, can be assembled in a single package forming the switch 230.

[0056] The Driv231 control circuit is intended to drive the T231 thyristor. To this end, the Driv231 control circuit includes an output terminal connected, preferably connected, to a gate terminal of the T231 thyristor. The Driv231 control circuit is powered by node N204 and is referenced to node N201.

[0057] The Driv231 control circuit comprises: - a GD231 circuit for controlling the gate of the thyristor T231; - an LS231 level shifter circuit; and - a Supp231 power supply circuit.

[0058] The GD231 gate control circuit for thyristor T231 is a circuit that provides a control current pulse to the gate of thyristor T231. In other words, an output of the GD231 circuit corresponds to the output of the Driv231 driver circuit.

[0059] The GD231 circuit includes a metal-oxide-semiconductor field-effect transistor (MOSFET) M231-1. In one example, the M231-1 is an N-channel MOS transistor. In a variant accessible to those skilled in the art, the M231-1 may be a P-channel MOS transistor. One source terminal of the M231-1 is connected to the gate of the thyristor T231, for example, via a resistor R231-1. One drain terminal of the M231-1 is connected to the reference node GND200. A parasitic diode of the M231-1 is shown in [Fig. 2].This parasitic diode is an intrinsic diode D231-1, also called a body diode, whose anode is connected, preferably connected, to the source terminal of transistor M231-1 and whose cathode is connected, preferably connected, to the drain terminal of transistor M231-1. In one embodiment, the GD231 circuit further includes a diode D231-2 formed in and on the substrate on which the Driv231 circuit is formed. In one embodiment, one cathode terminal of diode D231-2 is connected, preferably connected, to node N201, and one anode terminal of diode D231-2 is connected, preferably connected, to a terminal of the Driv232 driver circuit, for example, the drain terminal of transistor M232-1 described below. The role of diode D231-2 is described in more detail below. According to one embodiment, the D231-2 diode has its P-type doped casing connected, preferably connected, to the substrate of the Driv231 driver circuit.

[0060] According to a first preferred embodiment, diode D231-2 is a parasitic diode of a MOS transistor not shown in [Fig. 2], for example an intrinsic diode, also called a body diode, or a substrate diode. An example of the structure of a MOS transistor and its parasitic diodes is described in relation to [Fig. 3].

[0061] According to a second embodiment, the diode D231-2 is a substrate diode like that described in relation to [Fig.4].

[0062] The GD231 circuit further comprises a second transistor M231-2, a current source CS231-1, and a Zener diode DZ231-1. Transistor M231-2 connects node N201 to a node N202, which is itself connected, preferably connected, to the gate terminal of transistor M231-1. More specifically, a source terminal of transistor M231-2 is connected, preferably connected, to node N201, and a drain terminal of transistor M231-2 is connected, preferably connected, to node N202. A gate terminal of transistor M231-2 is adapted to receive a voltage from the level-shifting circuit LS231. One output of the CS231-1 power source is connected, preferably connected, to node N202, and one reference terminal of the CS231-1 power source is connected, preferably connected, to node N204.The anode of the DZ231-1 Zener diode is connected, preferably connected, to node N201, and the cathode of the DZ231-1 Zener diode is connected, preferably connected, to node N202.

[0063] The LS231 level shifter circuit shifts the control signals of the Driv232 circuit, referenced to node GND200 and powered by the potential present at node VDD200, to the Driv231 circuit, referenced to node N201 and powered by the Supp231 power supply circuit. The LS231 circuit comprises a voltage shifter circuit LS231-1 and four NMOS transistors M231-3, M231-4, M231-5 and M231-6.

[0064] According to one example, the voltage shifter circuit LS231-1 is powered by the potential of node N204, and is referenced to node N201. An inverting output of the L231-1 circuit is connected, preferably connected, to the gate of transistor M231-3 of the GD231 circuit.

[0065] By way of example, transistors M231-3 and M231-6 are low-voltage transistors arranged to form a low-voltage current mirror circuit. Transistors M231-4 and M231-5 are high-voltage transistors arranged to form a cascode configuration to protect the low-voltage current mirror from high voltages. More specifically, a source terminal of transistor M231-3 is connected, preferably connected, to node N201, and a drain terminal of transistor M231-3 is connected, preferably connected, to the source terminal of transistor M231-4. A drain terminal of transistor M231-4 is connected, preferably connected, to the gate terminals of transistors M231-4 and M231-5 and to the drain terminal of transistor M231-5.One source terminal of transistor M231-6 is connected, preferably connected, to node N201, and one drain terminal of transistor M231-6 is connected, preferably connected, to the gate terminals of transistors M231-3 and M231-6 and to the source terminal of transistor M231-5.

[0066] The intrinsic diodes of transistors M231-3, M231-4, M231-5, and M231-6 are all shown, and the substrate diodes of transistors M231-4 and M231-5 are also shown. More specifically, transistor M231-4 includes a substrate diode D231-3 and an intrinsic diode D231-4. Similarly, transistor M231-5 includes an intrinsic diode D231-5 and an intrinsic diode D231-6.

[0067] The LS231 circuit further includes a resistor R231-2 connecting the drain terminal of transistor M231-4 to the Driv232 driver circuit.

[0068] The Supp231 power supply circuit is adapted to provide a supply voltage from the potential supplied by node N201. For this purpose, the Supp231 power supply circuit comprises a Ref231 circuit providing a reference potential, a hysteresis voltage comparator circuit LS231-2, a high-voltage NMOS transistor M231-7, and a supply capacitor C231-1. One terminal of capacitor C231-1 is connected, preferably connected, to node N201, and a second terminal of capacitor C231-1 is connected, preferably connected, to the reference node N201. The charge level of capacitor C231-1 defines the conduction and non-conduction phases of transistor M231-7. The operation of the Supp231 power supply circuit is accessible to those skilled in the art.

[0069] Circuit Ref231 is powered by the potential of node N204 and referenced to node N201, and provides a reference potential, for example, a reference potential different from the potential provided by node GND200. Circuit Ref231 provides this reference potential to a first input of the LS231-2 hysteresis voltage comparator circuit. A second (-) input of the LS231-2 hysteresis voltage comparator circuit is connected, preferably connected to node N204. The hysteresis voltage comparator circuit is referenced to node N201 and drives the gate of transistor M231-7. One source terminal of transistor M231-7 is connected, preferably connected, to node N204, and one drain terminal of transistor M231-7 is connected to the anode of thyristor T231. Parasitic diodes of transistor M231-7 are shown in [Fig.2].Specifically, an intrinsic diode D231-7 connecting the source and drain terminals of transistor M231-7 is shown, and a substrate diode D231-8 connecting the drain terminal to node N201 and the substrate of the DRIV231 circuit is shown. Additionally, another parasitic substrate diode D231-9 appears between the drain terminal of transistor M231-7 and node GND200, which is itself connected to the substrate of the DRIV232 circuit.

[0070] The Driv232 driver circuit is intended to drive the T232 thyristor. To this end, the Driv232 driver circuit includes an output terminal connected, preferably, to a gate terminal of the T232 thyristor. The Driv232 driver circuit is powered by a VDD100 node providing a DC supply voltage, and is referenced to the GND100 reference node.

[0071] The Driv232 control circuit comprises: - a GD232 circuit for controlling the gate of the T232 thyristor; - a VR232 control circuit for the LS231 level shifter circuit; and - an MCU230 control circuit.

[0072] The GD232 thyristor T232 gate control circuit is a circuit that provides a control current pulse to the gate of the thyristor T232. In other words, an output of the GD232 circuit corresponds to the output of the Driv232 driver circuit.

[0073] The GD232 circuit includes an NMOS transistor M232-1. According to a variant within the grasp of those skilled in the art, the M232-1 transistor may be a PMOS transistor. One source terminal of the M232-1 transistor is connected to the gate of the T232 thyristor, for example, via a resistor R232-1. One drain terminal of the M232-1 transistor is connected to node N201. A parasitic diode of the M232-1 transistor is shown in [Fig. 2]. This parasitic diode is an intrinsic diode D232-1, the anode of which is connected, preferably connected, to the source terminal of the M232-1 transistor and the cathode of which is connected, preferably connected, to the drain terminal of the M232-1 transistor. According to one embodiment, the GD232 circuit further includes a D232-2 diode formed in and on the substrate on which the Driv232 circuit is formed.In one embodiment, a cathode terminal of diode D232-2 is connected, preferably connected, to a terminal of the Driv231 driver circuit, more specifically, to the drain terminal of transistor M231-1, and an anode terminal of diode D232-2 is connected, preferably connected, to node GND200. The role of diode D232-2 is described in more detail below. In one embodiment, diode D232-2 has its P-type doped casing connected, preferably connected, to the substrate of the Driv232 driver circuit.

[0074] According to a first preferred embodiment, diode D232-2 is a parasitic diode of a MOS transistor not shown in [Fig. 2], for example an intrinsic diode, also called a body diode, or a substrate diode. An example of the structure of a MOS transistor and its parasitic diodes is described in relation to [Fig. 3].

[0075] According to a second embodiment, the diode D232-2 is a substrate diode like that described in relation to [Fig.4].

[0076] The GD232 circuit further comprises a second transistor M232-2, a current source CS232-1, and a Zener diode DZ232-1. Transistor M232-2 connects node GND200 to node N205, which is itself connected, preferably connected, to the gate terminal of transistor M232-1. More specifically, a source terminal of transistor M232-2 is connected, preferably connected, to node GND200, and a drain terminal of transistor M232-2 is connected, preferably connected, to node N205. A gate terminal of transistor M232-2 is adapted to receive the control potential from node N205. N207. One output of the CS232-1 current source is connected, preferably connected, to node N205, and one supply terminal of the CS232-1 current source is connected, preferably connected, to a VDD200 node receiving a supply potential. The anode of the DZ232-1 Zener diode is connected, preferably connected, to node GND200, and the cathode of the DZ232-1 Zener diode is connected, preferably connected, to node N205.

[0077] The VR232 control circuit of the LS231 level shifter circuit allows the generation of two complementary control signals from the control signal provided by the MCU230 control circuit. The VR232 circuit includes two power logic inverters formed by transistors M232-5, M232-6, and the two transistors M232-3 and M232-4, and a Schmitt flip-flop LS232-1, also known as the "Schmitt Trigger" LS232-1, to interpret the control signals provided by the MCU230 control circuit.

[0078] According to one example, transistors M232-3, M232-4, M232-5, and M232-6 are arranged to form two cascaded inverters used to control the LS231 level shifter circuit. More specifically, a source terminal of transistor M232-3 is connected, preferably connected, to node VDD200, and a drain terminal of transistor M232-3 is connected, preferably connected, to the drain terminal of transistor M232-4. A source terminal of transistor M232-4 is connected, preferably connected, to reference node GND200. A source terminal of transistor M232-6 is connected, preferably connected, to node VDD200, and a drain terminal of transistor M232-6 is connected, preferably connected, to the drain terminal of transistor M232-5. One source terminal of transistor M232-5 is connected, preferably connected, to the reference node GND200. The gate terminals of transistors M232-3 and M232-4 are connected, preferably connected, to each other and to a node N207.This node N207 is, moreover, connected, preferably connected, to the midpoint between transistors M232-5 and M232-6. The gate terminals of transistors M232-5 and M232-6 are connected, preferably connected, to each other and to an output terminal of the voltage shifter circuit LS232-1. The intrinsic diodes of transistors M232-3, M232-4, M232-5, and M232-6 are all shown.

[0079] The VR232 control circuit further includes Zener diodes DZ232-2 and DZ232-3 for protecting the Driv232 driver circuit against electrostatic discharge. For this purpose, one cathode terminal of diode DZ232 is connected, preferably connected, to a node N206 corresponding to the midpoint between transistors M232-3 and M232-4. This node N206 is also connected, preferably connected, to a second terminal of resistor R232-1 of circuit LS231. One anode terminal of diode DZ232-2 is connected, preferably connected, to the reference node GND200. One cathode terminal of diode DZ232-3 is connected, from preferably connected to node N207. One anode terminal of diode DZ232-3 is connected, preferably connected to reference node GND200.

[0080] An input terminal of the LS232-1 voltage shifter circuit is connected, preferably connected, to an output of the MCU230 control circuit.

[0081] The VR232 control circuit further includes a resistor R232-2 connecting node N207 to the LS231 circuit of the Driv231 driver circuit. More specifically, a first terminal of resistor R232-2 is connected, preferably connected, to node N207, and a second terminal of resistor R232-2 is connected, preferably connected, to the drain terminal of transistor M231-5.

[0082] The MCU230 control circuit is adapted to provide a control voltage to the M232-1 transistor, which converts it into a control pulse for the T232 thyristor. In practice, the MCU230 control circuit can be a controller, a microcontroller, a processor, and / or a microprocessor.

[0083] The MCU230 control circuit may further include a power supply capacitor C232-1. A first terminal of capacitor C232-1 is connected, preferably connected, to node VDD200, and a second terminal of capacitor C232-1 is connected, preferably connected, to reference node GND200.

[0084] One advantage of the Driv231 and Driv232 driver circuits is their greater resistance to reverse bias. Diodes D231-1 and D231-2 protect the Driv231 and Driv232 driver circuits against reverse polarity. More specifically, diode D231-2, which is formed in and on the substrate of the Driv231 driver circuit, protects the Driv232 driver circuit, and in particular its transistor M232-1, against reverse polarity. Similarly, diode D232-2, which is formed in and on the substrate of the Driv232 driver circuit, protects the Driv231 driver circuit, and in particular its transistor M231-1, against reverse polarity. Put another way, each Driv231, Driv232 driver circuit is protected against reverse polarities by a diode whose casing P is connected, preferably connected, to the substrate of the other Driv232, Driv231 driver circuit.Furthermore, the use of D231-2, D231-9 and D232-2 substrate diodes integrated into the Driv231 and Driv232 driver circuit chips avoids the need for non-integrated discrete diodes.

[0085] A method for controlling the power supply to load 210 within system 200 is as follows. When load 210 is operating and needs to be powered, switch 230 is made conductive. To achieve this, the control circuits Driv231 and Driv232 send a control current pulse to thyristors T231 and T232. Thyristors T231 and T232 remain conductive as long as a current flows through them. When load 210 is not operating and does not need to be powered, switch 230 is made non-conductive. To achieve this, thyristors T231 and T232s are made non-conductive by not sending them any control current pulses.

[0086] Fig. 3 is a cross-sectional view illustrating a practical example of the realization of a T300 N-channel MOS transistor, or NMOS transistor, and illustrating, in particular, the positioning of its parasitic diodes.

[0087] As stated previously, [Fig. 3] illustrates an NMOS-type transistor T300 comprising parasitic diodes, and in particular an intrinsic diode BD300 and a substrate diode SD300. Like any MOS-type transistor, the M300 transistor comprises a source terminal S300, a drain terminal D300, a gate terminal G300 and a substrate terminal Sub300.

[0088] The transistor T300 is formed in and on a P-type doped substrate 301. An N-type doped box, for example obtained by an epitaxial process, extends over a large upper portion of the substrate 301. The PN junction formed by the substrate 301 and the box 302 forms the substrate diode SD300 of the transistor T300. More specifically, the anode region of the SD300 diode is formed by the substrate 301, and the cathode region of the SD300 diode is formed by the box 302.

[0089] An N-type doped cavity 303, designed to receive high voltages, is formed within the cavity 302. This cavity 303 forms the drain region of the transistor T300. A P-type doped cavity 304 is formed on a portion of the cavity 303 and extends over a portion of the surface of the cavity 303. The cavity 304 forms the channel region of the transistor T300. The PN junction formed by the cavities 303 and 304 forms the intrinsic diode BD300 of the transistor T300. More specifically, the anode region of the diode BD300 is formed by the substrate 304, and the cathode region of the diode BD300 is formed by the cavity 303.

[0090] An N-type doped cavity 305 is formed within the cavity 304. This cavity 305 forms the source region of the transistor T300. A heavily N-type doped source contact resumption region 306 is formed within the cavity 305. Similarly, a heavily P-type doped source contact resumption region 307 is formed within the cavity 304.

[0091] A gate stack 308 is formed on the channel region 304 and on a portion of the drain region 303 of the transistor T300. And a gate contact is formed on this stack 308. A heavily doped N-type drain contact re-establishment region 309 is formed in the box 304.

[0092] All these contact resumption regions are delimited by an electrically insulating layer 311. In addition, the transistor T300 can be laterally isolated by electrically insulating trenches 310, or by capacitive insulating trenches which can also serve as substrate contact resumption.

[0093] As described previously in relation to [Fig. 2], diodes D231-2 and D232-2 can be formed by parasitic diodes of a MOS transistor. These diodes can therefore be formed, for example, by a substrate diode of the SD300 type. According to another example, these diodes can be formed by an intrinsic diode of the BD300 type, but in this case the source terminal of the transistor to which the intrinsic diode belongs is connected, preferably connected, to its substrate terminal.

[0094] Figure 4 is a cross-sectional view illustrating a practical example of the realization of a diode D400.

[0095] The diode D400 is formed in and on a P-type doped substrate 401(N). An N-type doped box 402(N), for example obtained by an epitaxial process, extends over a large upper portion of the substrate 401. The PN junction formed by the substrate 401 and the box 402 forms the diode D400. More specifically, the anode region of the diode D400 is formed by the substrate 401, and the cathode region of the diode D400 is formed by the box 402.

[0096] A contact re-establishment can be formed as follows. An N-type doped layer 403(N) is formed on the upper surface of layer 402, and a heavily N-type doped layer 404(N+) is formed on a portion of the surface of layer 403 to create the contact re-establishment. In one example, layer 404 is connected, preferably via a K400 node forming the cathode terminal of diode D400. The remainder of the surface of layer 403 is, for example, covered with an electrically insulating layer 406.

[0097] According to one example, the diode D400 is laterally delimited by a circular electrically insulating trench 310, or by a circular capacitive insulating trench that can also serve as a substrate contact interface. According to one example, the insulating trench 405 comprises an insulating core, or a core made of a heavily doped P-type material, in contact with the substrate 401, and, for example, an electrically insulating surround.

[0098] Details of the materials used and the doping levels of the structures shown in relation to Figures 3 and 4 are not described and are within the understanding of a person skilled in the art. Likewise, all the steps of a manufacturing process for such a transistor or diode are within the understanding of a person skilled in the art.

[0099] Various embodiments and variations have been described. A person skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will become apparent to a person skilled in the art.

[0100] Finally, the practical implementation of the embodiments and variants described is within the reach of a person skilled in the art, based on the functional indications given above.

Claims

Demands

1. Electronic control device (Drivl31, Drivl32; Driv231, Driv232) of a switch (130; 230) comprising: - a first terminal (NI 10; N201) adapted to receive an alternating potential; - a second terminal (GND100; GND200) adapted to receive a reference potential; - a first control circuit (Drivl31; Driv231) of said switch (130; 230) referenced to said first terminal (NI 10; N201), formed on a first substrate, and comprising a first diode (D231-2) whose cathode region is connected to said first substrate; - a second driver circuit (Drivl32; Driv232) referenced to said second terminal (GND100; GND200) formed on a second substrate different from the first substrate, and comprising a second diode (D232-2) whose cathode region is connected to said second substrate; in which an anode region of said first diode (D231-2) is connected to said second driver circuit (Drivl32;Driv232), and an anode region of said second diode (D232-2) is connected to said first driver circuit (Drivl31; Driv231).;

2. Device according to claim 1, wherein said first driver circuit (Drivl31; Driv231) comprises a first transistor (M231-1) for controlling said switch (130; 230), and said anode region of said second diode (D232-2) is connected to a drain terminal of said first transistor (M231-1).

3. Device according to claim 1 or 2, wherein said second driver circuit (Drivl32; Driv232) comprises a second transistor (M232-1) for controlling said switch (130; 230), and said anode region of said first diode (D231-2) is connected to a drain terminal of said second transistor (M232-1).

4. Device according to claims 2 and 3, wherein said first and second transistors (M231-1, M232-1) are MOS type transistors.

5. Device according to any one of claims 1 to 4, wherein said first and second diodes (D231-2, D232-2) are parasitic diodes of third MOS-type transistors.

6. Device according to claim 5, wherein said first and second diodes (D231-2, D232-2) are substrate diodes of third transistors.

7. Device according to claim 5, wherein said first and second diodes (D231-2, D232-2) are intrinsic diodes of said third transistors whose source terminals are connected to their substrate terminals.

8. Device according to any one of claims 1 to 3, wherein said first and second diodes (D231-2, D232-2) are diodes laterally isolated by deep insulation trenches.

9. Device according to any one of claims 1 to 8, wherein said first driver circuit (Driv231) comprises a power supply circuit connected to said first terminal (NI 10; N201).

10. Switch (130; 230) comprising: - a control device (Drivl31, Drivl32; Driv231, Driv232) according to any one of claims 1 to 9; - a first thyristor (T 131; T231) whose cathode is connected to said first terminal (NI 10; N201), and whose anode is connected to said second terminal (GND100; GND200) and adapted to be controlled by said first control circuit (Drivl31; Driv231); and - a second thyristor (T 132 ; T232) whose anode is connected to said first terminal (NI 10 ; N201), and whose cathode is connected to said second terminal (GND100 ; GND200) and adapted to be driven by said second driving circuit (Drivl32 ; Driv232).

11. Switch according to claim 10 in its connection with claim 2, wherein said first transistor (M231-1) comprises a source terminal connected to the gate of said first thyristor (T231).

12. Switch according to claim 10 or 11 in its connection to claim 3, wherein said second transistor (M232-1) comprises a source terminal connected to the gate of said second thyristor (T232).

13. Electronic device (110) comprising a load (111; 210) adapted to receive an alternating voltage and a switch (130; 230) according to any one of claims 10 to 12, wherein a third terminal of said load (111; 210) is connected to said first terminal (NI 10; N201).

14. Electronic system (100; 200) comprising a device (110) according to claim 13 and a power supply (120; 220) adapted to provide an alternating voltage.

15. Method of controlling a load (111; 210) supplied by a power supply (120; 220) adapted to provide an alternating voltage, wherein said load (111; 210) is connected to said power supply (120; 220) by a switch (111; 230), said switch (130; 230) comprising: - a first terminal (NI 10; N201) adapted to receive an alternating potential; - a second terminal (GND100; GND200) adapted to receive a reference potential; - a first thyristor (T 131; T231) whose cathode is connected to said first terminal (NI 10; N201), and whose anode is connected to said second terminal (GND100; GND200); - a first control circuit (Drivl31; Driv231) of said switch (130; 230) referenced to said first terminal (NI 10; N201), formed on a first substrate, and comprising a first diode (D231-2) whose cathode region is connected to said first substrate; - a second control circuit (Drivl32;Driv232) of said second thyristor (T 132 ; T232) referenced to said second terminal (GND100 ; GND200) formed on a second substrate different from the first substrate, and comprising a second diode (D232-2) whose cathode region is connected to said second substrate; in which an anode region of said first diode (D231-2) is connected to said second driver circuit (Drivl32 ; Driv232), and an anode region of said second diode (D232-2) is connected to said first driver circuit (Drivl31 ; Driv231).;

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