Optoelectronic device comprising a pinched photodiode

Abstract

Electronic Device This description relates to an optoelectronic device comprising a pixel, the pixel comprising a pinched photodiode and a bipolar transfer transistor, the photodiode and the bipolar transistor being formed in and on the same first semiconductor substrate (16) made of a III-V material, the same first doped semiconductor layer (26) constituting the emitter of the bipolar transistor and the anode of the photodiode. Figure for the abstract: Fig. 1

Claims

7. Device according to claim 5 or 6, wherein the pixel comprises a wall (86) extending into the passivation region (82), so as to surround the second region, the wall (86) being configured to be polarized.

8. Device according to any one of claims 1 to 7, wherein the pixel comprises a sixth layer (70) of NiOx located between the first layer (26, 66) and a contact pad (32).

9. Device according to any one of claims 1 to 8, wherein the device comprises a pixel control circuit, the bipolar transistor being a transfer transistor of said control circuit.

10. Device according to claim 9, wherein the device comprises a second semiconductor substrate on and in which transistors of the pixel control circuit are formed, the first and second substrates being fixed to each other by molecular bonding.

11. Method of manufacturing an optoelectronic device comprising a pixel, the pixel comprising a pinched photodiode and a bipolar transfer transistor, the method comprising the formation in and on the same first semiconductor substrate (16) in a III-V material of the photodiode and the bipolar transistor, the same first doped semiconductor layer (26, 66) constituting the emitter of the bipolar transistor and the anode of the photodiode.

12. The method according to claim 11 applied to the manufacture of a device according to any one of claims 1 to 9.

13. A method for controlling the device according to any one of claims 1 to 10, the method comprising a storage mode, in which the first layer (26, 66) receives a negative voltage and a reading mode, in which the first layer (26, 66) receives a positive voltage. [Fig. 1] [Fig. 2] Fig 3 A [Fig. 3B] -24' 20 -18 —16 Fig 3B [Fig. 3C] 62 days ( —28' —26 ' -24' n I -22' -20 -18 -16 [Fig. 3D] in Fig 3D [Fig. 3E] [Fig. 4] Fig 4 [Fig. 5] 68 32 70.. ( 32 30 28 26 ' ! —24 •--77 —20 -18 -16 g / [Fig. 8] 16 [Fig. 9] Fig 8