Light emitting display apparatus

The light emitting display apparatus enhances light extraction efficiency and reduces power consumption by incorporating a protruding structure and connection electrode design, addressing the issue of low luminance and high power consumption.

GB2627054BActive Publication Date: 2025-05-21LG DISPLAY CO LTD
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Patent Information

Application Number
GB2023018682
Authority / Receiving Office
GB · GB
Patent Type
Patents
Current Assignee / Owner
Priority Date
2022-12-15
Filing Date
2023-12-06
Publication Date
2025-05-21
Estimated Expiration
2043-12-06

AI Technical Summary

Technical Problem

Light emitting display apparatuses suffer from low light extraction efficiency due to total reflection at interfaces, leading to reduced luminance and increased power consumption.

Method used

The apparatus includes a light extraction unit with a protruding structure and a connection electrode design that enhances light extraction efficiency by altering the light path and includes a welding contact portion for connecting adjacent pixels to compensate for defective transistors.

Benefits of technology

Improves light extraction efficiency, reduces power consumption, and increases the aperture ratio while maintaining high luminance and enabling effective repair of defective transistors.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

A light emitting display apparatus comprising a first anode electrode AE1 provided in a subpixel of a first pixel P1, a second anode electrode AE2 provided in a subpixel of a second pixel P2 disposed
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of the Korean Patent Application No. 10-2022-0176200 filed on December 15, 2022, which is hereby incorporated by reference as if fully set forth herein. BACKGROUND Technical Field

[0002] The present disclosure relates to a light emitting display apparatus. Description of the Related art

[0003] A light emitting display apparatus has a high response speed and a low power consumption. In addition, unlike a liquid crystal display apparatus, the light emitting display apparatus is a self-luminous apparatus which does not require a separate light source, whereby the light emitting display apparatus has no problem related with a viewing angle. Thus, the light emitting display apparatus has been attracted as a next generation display apparatus.

[0004] The light emitting display apparatus displays an image through a light emission of a light emitting element including a light emitting layer interposed between two electrodes.

[0005] However, in the light emitting display apparatus, a light extraction efficiency is lowered as some of the light emitted from the light emitting element layer is not discharged to the outside due to a total reflection on the interface between the light emitting element layer and electrode and / or interface between a substrate and an air layer. Accordingly, a luminance is reduced due to the low light extraction efficiency, and a power consumption is increased in the light emitting display apparatus. SUMMARY

[0006] The present disclosure has been made in view of the above problems, and it is an object of the present disclosure to provide a light emitting display apparatus capable of improving a light extraction efficiency of light emitted from a light emitting element.

[0007] It is another object of the present disclosure to provide a light emitting display apparatus capable of improving an aperture ratio.

[0008] It is a further object of the present disclosure to provide a light emitting display apparatus capable of recognizing a welding portion.

[0009] In accordance with an aspect of the present disclosure, the above and other objects may be accomplished by the provision of a light emitting display apparatus comprising a first anode electrode provided in a subpixel of a first pixel, a second anode electrode provided in a subpixel of a second pixel disposed adjacent to the first pixel, a first driving transistor for supplying power to the first pixel, a second driving transistor for supplying power to the second pixel, a welding contact portion for electrically connecting the second anode electrode to the first driving transistor, and a connection electrode including a connection electrode portion overlapped with the welding contact portion, a first protruding portion protruding from the connection electrode portion in a first direction, and a second protruding portion protruding from the connection electrode portion in a second direction. The second driving transistor may be in an error state. For example, the second driving transistor may be a non-functioning driving transistor. For example, the error state may be a state in which the second driving transistor does not operate],

[0010] In accordance with another aspect of the present disclosure, there is provided a light emitting display apparatus comprising a substrate having a subpixel including an emission area and a circuit area, a light emitting element provided in the emission area on the substrate and configured to include an anode electrode, a light emitting layer, and a cathode electrode, a driving transistor provided in the circuit area on the substrate, a first connection electrode electrically connected to the driving transistor, a second connection electrode provided on a layer different from the first connection electrode and electrically connected to the driving transistor, and an organic insulating layer disposed on the first connection electrode and the second connection electrode and configured to include a first driving contact hole overlapped with at least a portion of the first connection electrode and a first welding contact hole overlapped with at least a portion of the second connection electrode, wherein the second connection electrode includes a connection electrode portion overlapped with the first welding contact hole, a first protruding portion protruding from the connection electrode portion in a first direction, and a second protruding portion protruding from the connection electrode portion in a second direction.

[0011] In addition to the effects of the present disclosure as mentioned above, additional advantages and features of the present disclosure will be clearly understood by those skilled in the art from the above description of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other objects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0013] FIG. 1 is a plan view schematically illustrating a light emitting display apparatus according to one embodiment of the present disclosure;

[0014] FIG. 2 is a plan view schematically illustrating a pixel included in a display area;

[0015] FIG. 3 is a cross-sectional view along l-l’ of an emission area of FIG. 2;

[0016] FIG. 4 is a plan view illustrating some of a light extraction unit shown in FIG. 3;

[0017] FIG. 5A is a plan view illustrating a driving transistor and contact portions provided in a circuit area of FIG. 2;

[0018] FIGS. 5B to 5D are an example plan view illustrating some of the components shown in FIG. 5A.

[0019] FIG. 6 is a cross-sectional view along Il-Il’ of a driving transistor of FIG. 5A;

[0020] FIG. 7 is a plan view illustrating an opening area of holes provided in a driving contact portion and a welding contact portion shown in FIG. 5A;

[0021]

[0022] FIG. 8 is a cross-sectional view along Ill-Ill’ of the driving contact portion and welding contact portion of FIG. 5A; FIG. 9 is a cross-sectional view along IV-IV’ of the driving contact portion of FIG. 5A;

[0023] FIG. 10 is a cross-sectional view along V-V’ of the welding contact portion of FIG. 5A;

[0024] FIG. 11 is a cross-sectional view illustrating an example of irradiating a welding point with laser;

[0025] FIG. 12 is a plan view illustrating an example of a shape of a second connection electrode;

[0026] FIG. 13A is a diagram illustrating a rotation structure of a light extraction unit for each pixel;

[0027] 13A; and FIG. 13B is an enlarged view of a light extraction unit in the pixel of the first row and (j)th column shown in FIG.

[0028] FIG. 13C is an enlarged view of a light extraction unit in the pixel of the (i)th row and (j)th column shown in FIG. 13A. DETAILED DESCRIPTION OF THE DISCLOSURE

[0029] Advantages and features of the present disclosure, and implementation methods thereof will be clarified through following embodiments described with reference to the accompanying drawings. The present disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0030] A shape, a size, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), a ratio, an angle, and a number of elements disclosed in the drawings for describing embodiments of the present disclosure are merely an example, and thus, the present disclosure is not limited to the illustrated details.

[0031] A dimension including size and a thickness of each component illustrated in the drawing are illustrated for convenience of description, and the present disclosure is not limited to the size and the thickness of the component illustrated, but it is to be noted that the relative dimensions including the relative size, location, and thickness of the components illustrated in various drawings submitted herewith are part of the present disclosure.

[0032] Like reference numerals refer to like elements throughout the specification. In the following description, when the detailed description of the relevant known function or configuration is determined to unnecessarily obscure the important point of the present disclosure, the detailed description will be omitted. In a case where ‘comprise,’ ‘have,’ and ‘include’ described in the present specification are used, another part may be added unless only-’ is used. The terms of a singular form may include plural forms unless referred to the contrary.

[0033] In construing an element, the element is construed as including an error range although there is no explicit description.

[0034] In describing a position relationship, for example, when the position relationship is described as ‘upon-,’ ‘above-,’ 'below-,, and 'next to-,’ one or more portions may be arranged between two other portions unless "just”, “immediate(ly),” “direct(ly),” or “close(ly)," are used. For example, when a structure is described as being positioned “on,” “over,” “under,” “above,” “below,” “beneath,” “near,” “close to,” “adjacent to,” “beside,” or “next to” another structure, this description should be construed as including a case in which the structures contact each other as well as a case in which one or more additional structures are disposed or interposed therebetween. Furthermore, the terms “front,” “rear,” “back,” “left,” “right,” “top,” “bottom,” “downward,” “upward,” “upper,” “lower," “up," “down,” “column,” “row," “vertical,” “horizontal,” and the like refer to an arbitrary frame of reference.

[0035] In describing a temporal relationship, when the temporal order is described as “after,” “subsequent,” “next,” “before,” “preceding,” “prior to,” or the like a case which is not consecutive or not sequential may be included, unless a more limiting term, such as “just,” “immediate(ly),” or “direct(ly)” is used.

[0036] It will be understood that, although the terms “first," “second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.

[0037] In describing elements of the present disclosure, the terms “first,” “second,” etc., may be used. These terms are intended to identify the corresponding elements from the other elements, and basis, order, or number of the corresponding elements are not limited by these terms. The expression that an element is “connected” or “coupled” to another element should be understood that the element may directly be connected or coupled to another element but may directly be connected or coupled to another element unless specially mentioned, or a third element may be interposed between the corresponding elements.

[0038] For the expression that an element or a layer is “connected,” “coupled,” “attached,” or “adhered” to another element or layer the element or layer can not only be directly connected, coupled, attached, or adhered to another element or layer, but also be indirectly connected, coupled, attached, or adhered to another element or layer with one or more intervening elements or layers disposed or interposed between the elements or layers, unless otherwise specified.

[0039] For the expression that an element or layer “contacts," “overlaps,” or the like with another element or layer, the element or layer can not only directly contact, overlap, or the like with another element or layer, but also indirectly contact, overlap, or the like with another element or layer with one or more intervening elements or layers disposed or interposed between the elements or layers, unless otherwise specified. The expression “overlap” may refer to an overlap when the device is viewed in a direction which is perpendicular to the plane of the device.

[0040] Features of various embodiments of the present disclosure may be partially or overall coupled to or combined with each other, and may be variously inter-operated with each other and driven technically as those skilled in the art can sufficiently understand. The embodiments of the present disclosure may be carried out independently from each other, or may be carried out together in co-dependent relationship.

[0041] FIG. 1 is a plan view schematically illustrating a light emitting display apparatus according to one embodiment of the present disclosure.

[0042] Referring to FIG. 1, the light emitting display apparatus according to one embodiment of the present disclosure includes a first substrate 100, a plurality of pixels P and a second substrate 300.

[0043] The first substrate 100 is a thin film transistor array substrate, and may include glass or a plastic material. The light emitting display apparatus may include a display area DA and a non-display area NDA, and the first substrate 100 may be divided into the display area DA and the non-display area NDA.

[0044] The display area DA is an area in which a plurality of pixels P are provided to display an image, and may correspond to the other area except for an edge area of the first substrate 100.

[0045] A plurality of pixels P may be provided in the display area DA, and may be defined as a unit area in which light is actually emitted. Each of the plurality of pixels P may include a plurality of subpixels SP. For example, each of the plurality of pixels P may include a red subpixel that emits red light, a green subpixel that emits green light, and a blue subpixel that emits blue light, but is not necessarily limited thereto. For another example, each of the plurality of pixels P may include a white subpixel that emits white light. Sizes of the plurality of subpixels included in each of the plurality of pixels P may be the same as or different from each other.

[0046] The non-display area NDA is an area in which an image is not displayed, and may correspond to an area excluding the display area DA. The non-display area NDA is an edge area of the first substrate 100 surrounding the display area DA, may have a relatively very narrow width, and may be defined as a bezel area. The non-display area NDA may be provided with a peripheral circuit 120 that includes a line and a circuit to drive the plurality of pixels P provided in the display area DA.

[0047] The peripheral circuit 120 may include a gate driving circuit connected to the plurality of pixels P. The gate driving circuit may be integrated in the non-display area NDA at one side or both sides of the first substrate 100 and connected to the plurality of pixels P in accordance with a manufacturing process of a thin film transistor. The gate driving circuit may be formed by a gate driver in panel (GIP) method, a gate driver in active area (GIA) method or a tape automated bonding (TAB) method.

[0048] The second substrate 300 may protect a pixel array provided on the first substrate 100. The second substrate 300 may be defined as an opposing substrate, an encapsulation substrate or a color filter array substrate, and may be bonded to the first substrate 100 through an adhesive member (or a transparent adhesive). The second substrate 300 may include a transparent glass material or a transparent plastic material, but is not limited thereto. The second substrate 300 may be omitted if necessary.

[0049] FIG. 2 is a plan view schematically illustrating a pixel included in a display area, FIG. 3 is a cross-sectional view along l-l’ of an emission area of FIG. 2, and FIG. 4 is a plan view illustrating some of a light extraction unit shown in FIG. 3.

[0050] Referring to FIGS. 1 and 2, the light emitting display apparatus according to one embodiment of the present disclosure includes a plurality of pixels Pina display area DA, and each of the plurality of pixels P may include a plurality of subpixels SP. In one embodiment, each of the plurality of pixels P may include four subpixels SP1 to SP4. For example, each of the plurality of pixels P may include a first subpixel SP1 emitting red light, a second subpixel SP2 emitting green light, a third subpixel SP3 emitting blue light and a fourth subpixel SP4 emitting white light, but is not limited thereto.

[0051] Each of the first to fourth subpixels SP1 to SP4 may include a light emission area EA and a circuit area CA. The light emission area EA may be sometimes referred to as an emission area. The light emission area EA may be disposed at one side (or an upper side) of a subpixel area, and the circuit area CA may be disposed at the other side (or a lower side) of the subpixel area. For example, the circuit area CA may be disposed below the light emission area EA based on a second direction (e.g., Y-axis direction). The light emission areas EA of the first to fourth subpixels SP1 to SP4 may have the same size, but are not limited thereto. The light emission areas EA of the first to fourth subpixels SP1 to SP4 may have a different size (or area).

[0052] The circuit area CA may be spatially separated from the light emission area EA in the subpixel area, but is not limited thereto. For example, at least a portion of the circuit area CA may overlap the light emission area EA in the subpixel area, or may be disposed below the light emission area EA. The light emission area EA may be an opening area, a light emission area, a transmissive area or a transmissive portion. The circuit area CA may be a non-emission area NEA or a non-opening area.

[0053] Each of the first to fourth subpixels SP1 to SP4 according to one embodiment may further include a transparent area that is disposed near at least one of the light emission area EA or the circuit area CA and transmits external light. In this case, the light emitting display apparatus may implement a transparent light emitting display apparatus due to light transmission of the transparent portion.

[0054] Each of the first to fourth subpixels SP1 to SP4 may include a light extraction unit 140 (e.g., light extraction part) and a light emitting element 150 in the light emission area EA as shown in FIG. 3.

[0055] Referring to FIG. 3, an overcoat layer 130 may be provided over the first substrate 100 provided with a pixel circuit layer 110. The overcoat layer 130 may be provided over the first substrate 100 to cover the pixel circuit layer 110. The overcoat layer 130 maybe provided in the other area of the non-display area NDA except for the pad area and the entire display area DA. For example, the overcoat layer 130 may include an extension portion (or an enlarged portion) extended or enlarged toward the other non-display area except for the pad area from the display area DA. Therefore, the overcoat layer 130 may have a relatively wider size than the display area DA.

[0056] The overcoat layer 130 may be formed to have a relatively thick thickness to provide a flat surface on the pixel circuit layer 110 (e.g., to provide a planarization function). For example, the overcoat layer 130 may include an organic insulating layer, for example, an organic material such as photo acryl, benzocyclobutene, polyimide and fluorine resin.

[0057] The light extraction unit 140 may be provided over an upper surface of the overcoat layer 130 to overlap the light emission area EA of the subpixel SP. The light extraction unit 140 can also be referred to as a light extraction part and is configured to direct more light outside of the device. The light extraction unit 140 may be provided over the overcoat layer 130 to have a curved (or uneven) shape, thereby changing a propagation path of light emitted from the light emitting element 150 to increase light extraction efficiency. For example, the light extraction unit 140 may be a non-flat portion, an uneven pattern portion, a micro lens portion, or a light scattering pattern portion.

[0058] The light extraction unit 140 may include a plurality of concave portions 141 and a convex portion 143 disposed near each of the plurality of concave portions 141, which can form a honeycomb pattern in apian view, but embodiments are not limited thereto. The plurality of concave portions 141 may be formed or configured to be concave from the upper surface of the overcoat layer 130. The convex portion 143 may be disposed between the plurality of concave portions 141. The convex portion 143 may be formed to surround each of the plurality of concave portions 141.

[0059] An upper portion of the convex portion 143 may include a pointed tip structure to increase light extraction efficiency, but is not limited thereto. For example, the upper portion of the convex portion 143 may have a convex curved shape. For example, the upper portion of the convex portion 143 may include a convex cross-sectional dome or bell structure, but is not limited thereto.

[0060] The convex portion 143 may include an inclined portion having a curved shape between a bottom portion and an upper portion (or a top portion). The inclined portion of the convex portion 143 may form or configure the concave portion 141. For example, the inclined portion of the convex portion 143 may be an inclined surface or a curved surface. The inclined portion of the convex portion 143 according to one embodiment may have a cross-sectional structure of a Gaussian curve. In this case, the inclined portion of the convex portion 143 may have a tangent slope that gradually increases from the bottom portion to the upper portion and is gradually reduced.

[0061] Referring to FIG. 4, each of the plurality of concave portions 141 according to one embodiment of the present disclosure may be disposed in parallel to have a predetermined interval along a first direction (e.g., X-axis direction), and may be alternately disposed along the second direction (e.g., Y-axis direction). Therefore, the light extraction unit 140 (e.g., light extraction part) may include a larger number of concave portions 141 per unit area, thereby increasing external extraction efficiency of light emitted from the light emitting element 150.

[0062] According to one embodiment, a central portion C of each of the plurality of concave portions 141 disposed along the first direction (e.g., X-axis direction) may be positioned or aligned in a first straight line SL1 parallel with the first direction (e.g., X-axis direction). The central portion C of each of the plurality of concave portions 141 disposed along the second direction (e.g., Y-axis direction) may be positioned or aligned in a second straight line SL2 parallel with the second direction (e.g., Y-axis direction).

[0063] According to another embodiment, the plurality of concave portions 141 may be disposed in a lattice shape. Each of the plurality of concave portions 141 disposed in an even-numbered horizontal line parallel with the first direction (e.g., X-axis direction) may be disposed between the plurality of concave portions 141 disposed in adjacent odd-numbered horizontal lines along the second direction (e.g., Y-axis direction). Therefore, the plurality of concave portions 141 may be positioned or aligned in a zigzag line ZL having a zigzag shape along the first direction (e.g., X-axis direction).

[0064] According to one embodiment, the central portion C of each of three adjacent concave portions 141 may form a triangular shape TS. In addition, the central portion C of each of six concave portions 141 disposed near one concave portion 141 or surrounding one concave portion 141 may form a six-angular shape HS in a plan view (e.g., a hexagon shape). For example, each of the plurality of concave portions 141 may be disposed or arranged in a honeycomb structure or a circle structure, but embodiments are not limited thereto.

[0065] According to one embodiment of the present disclosure, when the plurality of concave portions 141 are disposed in a honeycomb structure, diagonal center lines DCL1 and DCL2 passing through the central portion C of concave portions 141 disposed along diagonal directions DD1 and DD2 between the first direction (e.g., X-axis direction) and the second direction (e.g., Y-axis direction) may be inclined from each of the first straight line SL1 and the second straight line SL2. For example, a first angle 1 between the diagonal center lines DCL1 and DCL2 and the first straight line SL1 may be 30°, and a second angle ¢) 2 between the diagonal center lines DCL1 and DCL2 and the second straight line SL2 may be 60°.

[0066] According to one embodiment of the present disclosure, pitches (or interval L1) between the concave portions 141 respectively disposed in the plurality of subpixels SP constituting one pixel P may be the same as or different from each other. The pitch L1 between the concave portions 141 may be a distance (or interval) between the central portions C of two adjacent concave portions 141.

[0067] In one embodiment, the pitches L1 among the concave portions 141 respectively disposed in the red subpixel, the green subpixel, the blue subpixel and the white subpixel may be the same as or different from one another. For example, the pitch L1 between the concave portions 141 disposed in the green subpixel may be different from that between the concave portions 141 disposed in the blue subpixel.

[0068] In another embodiment, the concave portions 141 respectively disposed in the red subpixel, the green subpixel, the blue subpixel and the white subpixel may have the same number and / or density or different numbers and / or densities from one another. For example, the number and / or density of the concave portions 141 disposed in each of the white subpixel and the green subpixel maybe different from the number and / or density of the concave portions 141 disposed in each of the red subpixel and the blue subpixel.

[0069] The convex portion 143 may be configured to individually surround each of the plurality of concave portions 141. Therefore, the light extraction unit 140 may include a plurality of concave portions 141 surrounded by the convex portion 143. The convex portion 143 surrounding one concave portion 141 may have a hexagonal shape (or a honeycomb shape) in a plan view, but the embodiment of the present disclosure is not limited thereto.

[0070] Referring back to FIG. 3, the light emitting element 150 may be disposed over the light extraction unit 140 (e g., light extraction part) that overlaps with the light emission area EA. The light emitting element 150 may be configured to emit light toward the first substrate 100 in accordance with a bottom emission method, but the embodiment of the present disclosure is not limited thereto. The light emitting element 150 according to one embodiment may include an anode electrode AE, a light emitting layer EL and a cathode electrode GE.

[0071] The anode electrode AE may be provided over the overcoat layer 130 and electrically connected to a source electrode (or a drain electrode) of a driving thin film transistor. The anode electrode AE may be extended from the light emission area EA to the circuit area GA. One end of the anode electrode AE may be electrically connected to the source electrode (or the drain electrode) of the driving thin film transistor through a driving contact hole in the circuit area GA.

[0072] Since the anode electrode AE is directly in contact with the light extraction unit 140, the anode electrode AE may have a shape that follows the shape of the light extraction unit 140. Since the anode electrode AE is provided (or deposited) over the overcoat layer 130 to have a relatively thin thickness, the anode electrode AE may have a surface shape that conforms to a surface morphology of the light extraction unit 140 that includes the convex portion 143 and the plurality of concave portions 141. For example, the anode electrode AE may have the same cross-sectional structure as that of the light extraction unit 140 as the anode electrode AE is formed in a conformal shape, which follows the surface shape (or morphology) of the light extraction unit 140, by a deposition process of a transparent conductive material.

[0073] The light emitting layer EL may be provided over the anode electrode AE and may be directly in contact with the anode electrode AE. The light emitting layer EL may be formed (or deposited) on the anode electrode AE so as to have a relatively thick thickness as compared with the anode electrode AE, thereby having a surface shape different from that of each of the plurality of concave portions 141 and the convex portion 143 or that of the anode electrode AE. For example, the light emitting layer EL may be formed in a non-conformal shape, which does not follow the surface shape (or morphology) of the anode electrode AE, by a deposition process and thus may have a cross-sectional structure different from that of the anode electrode AE.

[0074] The light emitting layer EL according to one embodiment may have a thickness that is gradually increased toward the bottom surface of the convex portion 143 or the concave portion 141. For example, the light emitting layer EL may be formed on the top of the convex portion 143 to have a first thickness, may be formed on the bottom surface of the concave portion 141 to have a second thickness thicker than the first thickness, and may be formed on the inclined surface (or the curved portion) of the convex portion 143 to have a third thickness thinner than the first thickness. Each of the first to third thicknesses may correspond to a shortest distance between the anode electrode AE and the cathode electrode CE.

[0075] The light emitting layer EL according to one embodiment may include two or more organic light emitting layers for emitting white light. For example, the light emitting layer EL may include first and second organic light emitting layers for emitting white light by mixing first light with second light. For example, the first organic light emitting layer may include one of a blue organic light emitting layer, a green organic light emitting layer, a red organic light emitting layer, a yellow organic light emitting layer and a yellow-green organic light emitting layer to emit the first light. For example, the second organic light emitting layer may include an organic light emitting layer for emitting the second light for implementing white light by mixture with the first light of the blue organic light emitting layer, the green organic light emitting layer, the red organic light emitting layer, the yellow organic light emitting layer and the yellow-green organic light emitting layer. The light emitting layer EL according to another embodiment may include any one of the blue organic light emitting layer, the green organic light emitting layer and the red organic light emitting layer. Additionally, the light emitting layer EL may include a charge generation layer interposed between the first organic light emitting layer and the second organic light emitting layer.

[0076] The cathode electrode CE may be provided over the light emitting layer EL and may be directly in contact with the light emitting layer EL. The cathode electrode CE may be formed (or deposited) on the light emitting layer EL to have a relatively thin thickness as compared with the light emitting layer EL. The cathode electrode CE may be formed (or deposited) on the light emitting layer EL to have a relatively thin thickness, thereby having a surface shape that conforms to that of the light emitting layer EL. For example, the cathode electrode CE may be formed in a conformal shape that conforms to the surface shape (or morphology) of the light emitting layer EL by a deposition process to have a cross-sectional structure the same as that of the light emitting layer EL and different from that of the light extraction unit 140.

[0077] The cathode electrode CE according to one embodiment may include a metal material having high reflectance to reflect incident light, which is emitted from the light emitting layer EL, toward the first substrate 100. For example, the cathode electrode CE may include a single layered structure or multi-layered structure made of any one material selected from aluminum (Al), silver (Ag), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca) and barium (Ba), or two or more alloy materials. The cathode electrode CE may include an opaque conductive material having high reflectance.

[0078] The light emitting element 150 may emit light by a current supplied by the pixel circuit. The concave portion 141 or the convex portion 143 of the light extraction unit 140 (e.g., light extraction part) increases external extraction efficiency of the light emitted from the light emitting layer EL by changing a path of the light emitted from the light emitting layer EL to a light emitting surface (or light extraction surface). For example, the convex portion 143 may prevent or minimize degradation of light extraction efficiency due to light trapped in the light emitting element 150 by repeating total reflection between the anode electrode AE and the cathode electrode CE of the light emitting element 150 without moving the light emitted from the light emitting element 150 to the light emitting surface. Therefore, the light emitting display apparatus according to one embodiment of the present disclosure may improve light extraction efficiency of the light emitted from the light emitting element 150.

[0079] The light emitting display apparatus according to one embodiment of the present disclosure may further include a bank 170. The bank 170 may be provided over the overcoat layer 130. The bank 170 may include an organic material such as a benzocyclobutene (BCB)-based resin, an acryl-based resin or a polyimide resin.

[0080] The bank 170 may be provided over the overcoat layer 130 to at least partially cover an edge of the anode electrode AE extended onto the circuit area CA. The light emission area EA defined by the bank 170 may have a size smaller than that of the light extraction unit 140 in a plan view.

[0081] The light emitting layer EL of the light emitting element 150 may be provided over the anode electrode AE, the bank 170 and a step difference portion between the anode electrode AE and the bank 170. In this case, when the light emitting layer EL is formed in the step difference portion between the anode electrode AE and the bank layer 170 to have a relatively thin thickness, the cathode electrode CE may be in electrical contact (or short) with the anode electrode AE. To solve this problem, an end (or outermost bank line) of the bank 170 adjacent to the light emission area EA maybe disposed to cover an edge portion of the light extraction unit 140. Therefore, an electrical contact (or short) between the anode electrode AE and the cathode electrode CE may be prevented from occurring due to an end of the bank 170 disposed in the step difference portion between the anode electrode AE and the bank 170.

[0082] The light emitting display apparatus according to one embodiment of the present disclosure may further include a color filter 180.

[0083] The color filter 180 may be disposed between the first substrate 100 and the overcoat layer 130 to at least partially overlap at least one light emission area EA. The color filter 180 according to one embodiment may be disposed below the overcoat layer 130 and at least partially overlap the light emission area EA.

[0084] The color filter 180 may have a size larger than that of the light emission area EA. For example, the color filter 180 may have a size larger than that of the light emission area EA and smaller than that of the light extraction unit 140 (e g., light extraction part), but is not limited thereto. The color filter 180 may have a size larger than that of the light extraction unit 140. For example, when the color filter 180 has a size larger than that of the light extraction unit 140, light leakage, in which internal light moves toward the subpixel SP adjacent thereto, may be reduced or minimized.

[0085] The color filter 180 according to one embodiment may include a color filter that transmits only a wavelength of a color, which is set in the subpixel SP among light emitted (or extracted) from the light emitting element 150 to the first substrate 100. For example, the color filter 180 may transmit a red, green or blue wavelength. When one pixel P includes first to fourth subpixels SP adjacent to one another, a color filter provided in the first subpixel may include a red color filter, a color filter provided in the second subpixel may include a green color filter, and a color filter provided in the third subpixel may include a blue color filter. The fourth subpixel may not include a color filter, or may include a transparent material for compensation of a step difference, thereby emitting white light.

[0086] The light emitting display apparatus according to one embodiment of the present disclosure may further include an encapsulation layer 200.

[0087] The encapsulation layer 200 may be provided over the first substrate 100 to cover the light emitting element 150. The encapsulation layer 200 may be provided over the first substrate 100 to cover the cathode electrode AE. The encapsulation layer 200 may serve to protect the thin film transistor and the light emitting layer EL from external impact and prevent oxygen and / or moisture or particles from being permeated into the cathode electrode CE and the light emitting layer EL.

[0088] The encapsulation layer 200 according to one embodiment may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. The organic encapsulation layer may be expressed as a particle cover layer.

[0089] The encapsulation layer 200 according to another embodiment may be changed to a filler fully surrounding the display area, and in this case, the second substrate 300 may be bonded to the first substrate 100 via a filler. The filler may include a getter material that absorbs oxygen and / or moisture.

[0090] The second substrate 300 may be coupled to the encapsulation layer 200. The second substrate 300 may include a plastic material, a glass material or a metal material. For example, when the encapsulation layer 200 includes a plurality of inorganic encapsulation layers, the second substrate 300 may be omitted.

[0091] Optionally, when the encapsulation layer 200 is changed to the filler, the second substrate 300 may be coupled to the filler, and in this case, the second substrate 300 may be made of a plastic material, a glass material or a metal material.

[0092] Referring back to FIG. 2, the first to fourth subpixels SP1 to SP4 may be disposed to be adjacent to one another along the first direction (e g., X-axis direction). Two data lines DL extended along the second direction (e.g., Y-axis direction) may be disposed between the first subpixel SP1 and the second subpixel SP2 and between the third subpixel SP3 and the fourth subpixel SP4 in parallel with each other. A pixel power line VDDL extended along the second direction (e.g., Y-axis direction) may be disposed at one side of the first subpixel SP1 or the fourth subpixel SP4. A reference line RL extended along the second direction (e.g., Y-axis direction) may be disposed between the second subpixel SP2 and the third subpixel SP3. The reference line RL may be used as a sensing line for sensing a characteristic change of the driving thin film transistor disposed in the circuit area CA and / or a characteristic change of the light emitting element from the outside during a sensing driving mode of the pixel P. A gate line GL extended along the first direction X may be disposed below the circuit area CA of each of the first to fourth subpixels SP1 to SP4.

[0093] Each of the first to fourth subpixels SP1 to SP4 may include a pixel circuit in the circuit area CA. The pixel circuit may be connected to the gate line GL, the data line DL and the pixel power line VDDL, which are provided to be adjacent to the circuit area CA. The pixel circuit controls a current flowing in the light emitting element 150 in accordance with a data signal from the data line DL in response to a scan pulse from the gate line GL based on a pixel power source supplied from the pixel power line VDDL. The pixel circuit may include at least one transistor and a capacitor.

[0094] The at least one transistor may include a driving transistor and switching transistors. The switching transistor may be switched in accordance with the scan pulse supplied to the gate line GL to charge a data voltage, which is supplied from the data line DL, in the capacitor.

[0095] The driving transistor may be switched in accordance with a voltage supplied from the switching transistor or the data voltage charged in the capacitor to generate a data current from the power source supplied from the pixel power line VDDL and supply the data current to the light emitting element 150 of the first to fourth subpixels SP1 to SP4.

[0096] In the light emitting display apparatus according to one embodiment of the present disclosure, in addition to at least one transistor and the capacitor, contact portions for electrically connecting the light emitting element 150 with the driving transistor may be further disposed in the circuit area CA. A size of the circuit area CA may be increased in accordance with positions of the driving transistor and the contact portions, whereby the size of the light emission area EA may be reduced.

[0097] The light emitting display apparatus according to one embodiment of the present disclosure may include a driving transistor and contact portions, which are capable of minimizing the size of the circuit area CA. Hereinafter, the driving transistor and the plurality of contact portions, which are provided in the circuit area CA, will be described in detail with reference to FIGS. 5 to 12.

[0098] FIG. 5A is a plan view illustrating a driving transistor and contact portions provided in a circuit area of FIG. 2, FIGS. 5B to 5D are an example plan view illustrating some of the components shown in FIG. 5A, and FIG. 6 is a cross-sectional view along Il-Il’ of a driving transistor of FIG. 5A. FIG. 7 is a plan view illustrating an opening area of holes provided in a driving contact portion and a welding contact portion shown in FIG. 5A, FIG. 8 is a cross-sectional view along Ill-Ill’ of the driving contact portion and welding contact portion of FIG. 5A, FIG. 9 is a cross-sectional view along IV-IV’ of the driving contact portion FIG. 5A, and FIG. 10 is a cross-sectional view along V-V of the welding contact portion of FIG. 5A. FIG. 11 is a cross-sectional view illustrating an example of irradiating a welding point with laser (e.g., a laser beam).

[0099] For convenience of description, the first substrate 100, the pixel circuit layer 110, the overcoat layer 130 and anode electrodes AE1 and AE2 are only shown in FIGS. 6 and 8 to 11, but the present disclosure is not limited thereto. It is not excluded that at least one of the light emitting layer EL, the cathode electrode CE, the encapsulation layer 200 or the second substrate 300 is stacked in the circuit area GA.

[00100] Referring to FIGS. 2 and 5, each of the first to fourth subpixels SP1 to SP4 may include a driving transistor DTR disposed in the circuit area CA. The driving transistor DTR is provided in the pixel circuit layer 110, and may include an active layer ACT and a gate electrode GE.

[00101] A light shieldIng layer LS may be provided over the first substrate 100. The light shielding layer LS may minimize or prevent a change in a threshold voltage of the driving transistor DTR due to external light. The light shielding layer LS may include a conductive material, for example, a single layer or multi-layer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloy. In this case, a buffer layer 112 may be provided between the light shielding layer LS and the active layer ACT. The buffer layer 112 may be an inorganic insulating layer, and may include a silicon oxide layer (SIOx), a silicon nitride layer (SiNx) or a multi-layer thereof.

[00102] The active layer ACT may be provided over the buffer layer 112. The active layer ACT may include a first active layer ACT 1 and a second active layer ACT2. The first active layer ACT 1 may be a semiconductor layer, and may include a semiconductor material based on any one of amorphous silicon, polycrystalline silicon, oxide and an organic material. For example, the first active layer ACT 1 may include indium gallium zinc oxide (IGZO).

[00103] The second active layer ACT2 may be provided over the first active layer ACT 1. The second active layer ACT2 may be a conductive layer, and may include any one of metals, such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta) and titanium (Ti), or their alloy. For example, the second active layer ACT2 may include molybdenum titanium (MoTi).

[00104] The second active layer ACT2 may be provided in an area other than a channel area CH of the driving transistor DTR on the first active layer ACT 1. That is, only the first active layer ACT 1 may be provided in the channel area CH of the driving transistor DTR. The active layer ACT may have a structure in which the first active layer ACT1 and the second active layer ACT2 are stacked in a source area S and a drain area D of the driving transistor DTR. The second active layer ACT2 provided in the source area S of the driving transistor DTR corresponds to the source electrode of the driving transistor DTR, and the second active layer ACT2 provided in the drain area D of the driving transistor DTR may correspond to the drain electrode of the driving transistor DTR.

[00105] A gate insulating layer 114 may be provided over the active layer ACT. The gate insulating layer 114 maybe formed on only the active layer ACT (e.g., or only under the gate electrode GE), or may be formed the entire surface of the first substrate 100 or the buffer layer 112, which includes the active layer ACT. The gate insulating layer 114 may include an inorganic insulating layer, for example, a silicon oxide layer (SIOx), a silicon nitride layer (SiNx) or a multi-layer thereof.

[00106] The gate electrode GE may be provided over the gate insulating layer 114 to at least partially overlap the channel area CH of the driving transistor DTR. The gate electrode GE may include a single layer or multi-layer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloy.

[00107] A passivation layer 118 may be provided to cover the pixel circuit that includes the driving transistor DTR. The passivation layer 118 may be an inorganic insulating layer, and may include, for example, a silicon oxide layer (SIOx), a silicon nitride layer (SiNx) or a multi-layer thereof.

[00108] An overcoat layer 130 may be provided over the pixel circuit layer 110, in which the driving transistor DTR is formed, to planarize a step difference caused by the driving transistor DTR.

[00109] In each of the first to fourth subpixels SP1 to SP4, two contact portions for electrically connecting the light emitting element 150 with the driving transistor DTR may be disposed in the circuit area CA. The contact portions may include a driving contact portion DCT and a welding contact portion WCT.

[00110] The driving contact portion DCT corresponds to a contact portion for electrically connecting the light emitting element 150 disposed in the light emission area EA of a specific subpixel with the driving transistor DTR disposed in the circuit area CA of a specific subpixel.

[00111] In detail, the plurality of pixels P may include a first pixel P1 and a second pixel P2, which are disposed to be adjacent to each other. The second pixel P2 may be disposed to be adjacent to the first pixel P1 in the second direction (e.g., Y-axis direction). Each of the first pixel P1 and the second pixel P2 may include a plurality of subpixels, for example, first to fourth subpixels SP1 to SP4 arranged in the first direction (e.g., X-axis direction). Each of the first to fourth subpixels SP1 to SP4 may include a light emission area EA and a circuit area CA.

[00112] The driving contact portion DCT may electrically connect the light emitting element 150 disposed in the light emission area EA of a subpixel SP1-1 provided in the first pixel P1 with the driving transistor DTR disposed in the circuit area CA of the subpixel SP1-1 provided in the first pixel P1. In this case, the subpixel SP1-1 provided in the first pixel P1 may be one of the first to fourth subpixels SP1 to SP4 provided in the first pixel P1.

[00113] The driving contact portion DCT may include at least one insulating layer that includes a first connection electrode CP1 (e.g., CP1 -1, CP1-2, CP1-3) and a driving contact hole.

[00114] The first connection electrode CP1 may be electrically connected to the driving transistor DTR. The first connection electrode CP1 may include a first electrode pattern CP1-1 and a second electrode pattern CP1-2. For example, as shown in FIG. 5A, the second electrode pattern CP1-2 and the third electrode pattern CP1-3 can protrude or extend from the first electrode pattern CP1-1. Also, the second electrode pattern CP1-2 and the third electrode pattern CP1-3 can be disposed on opposite sides of the welding contact portion WCT.

[00115] In one embodiment, the first electrode pattern CP1-1 and the second electrode pattern CP1-2 of the first connection electrode CP1 may be provided as one layer. The first electrode pattern CP1-1 and the second electrode pattern CP1-2 of the first connection electrode CP1 may be provided on the same layer as the gate electrode GE of the driving transistor DTR. The light shielding layer LS may be provided below the first connection electrode CP1 to shield external light incident on the first connection electrode CP1. In addition, a circuit pattern COP (see, e.g., FIGS. 8 and 9) maybe provided between the first connection electrode CP1 and the light shielding layer LS, and may be provided on the same layer as the active layer ACT of the driving transistor DTR, but is not limited thereto.

[00116] The first electrode pattern CP1-1 of the first connection electrode CP1 may be provided to overlap the driving contact hole. The first electrode pattern CP1-1 of the first connection electrode CP1 may be exposed in an area overlapped with the driving contact hole. The first electrode pattern CP1-1 of the first connection electrode CP1 may be electrically connected to the light emitting element 150 of the subpixel SP1-1 provided in the first pixel P1, especially the first anode electrode AE1 through the driving contact hole (e.g., see FIG. 3,5, 8 and 9).

[00117] Referring to FIGS. 7, 8 and 9, at least one insulating layer, which includes a driving contact hole, may be provided over the first electrode pattern CP1-1 of the first connection electrode CP1. The at least one insulating layer may include at least one of an organic insulating layer or an inorganic insulating layer. For example, the organic insulating layer may include the overcoat layer 130, and the inorganic insulating layer may include the passivation layer 118.

[00118] The overcoat layer 130 is provided over the first connection electrode CP1. The overcoat layer 130 may include afirst driving contact hole DH1 (e.g., FIG. 8) that overlaps with atleasta portion of the first connection electrode CP1, especially the first electrode pattern CP1-1. The first driving contact hole DH1 may include a first opening area OA1 passing through the overcoat layer 130, a first inclined area SA1 forming a first inclined surface S1 on the overcoat layer 130 and a second inclined area SA2 forming a second inclined surface S2 on the overcoat layer 130. The first opening area OA1 of the overcoat layer 130 is formed through a photo process that uses a full-tone photo mask. The first inclined area SA1 and the second inclined area SA2 of the overcoat layer 130 may be formed through a photo process that uses a half-tone photo mask.

[00119] The first driving contact hole DH1 of the overcoat layer 130 may include a first inclined surface S1 provided on a first side directed toward the welding contact portion WCT and a second side facing the first side, and a second inclined surface S2 provided on a third side directed toward the light emission area EA of the subpixel SP1-1 provided in the first pixel P1 and a fourth side facing the third side. The first inclined surface S1 and the second inclined surface S2, which are formed in the first driving contact hole DH1 of the overcoat layer 130 according to one embodiment of the present disclosure, may have their respective inclinations different from each other.

[00120] In one embodiment, a first inclination 01 of the first inclined surface S1 may be greater than a second inclination 02 of the second inclined surface S2. The inclination of each of the first inclined surface S1 and the second inclined surface S2 may be determined depending on a width of a half-tone photo mask. As shown in FIG. 7, the first inclined surface S1 may be formed using a half-tone photo mask having a third width W3, and the second inclined surface S2 may be formed using a half-tone photo mask having a fourth width W4 greater than the third width W3. The first inclined surface S1 may be formed to have a steep inclination by using a half-tone photo mask having a small width. On the other hand, the second inclined surface S2 may be formed to have a gentle inclination by using a half-tone photo mask having a large width.

[00121] The passivation layer 118 may be provided between the overcoat layer 130 and the first connection electrode CP1. The passivation layer 118 may include a second driving contact hole DH2 that at least partially overlaps with the first driving contact hole DH1 of the overcoat layer 130. For example, the first driving contact hole DH1 can be larger than the second driving contact hole DH2, and the first and second driving contact holes DH1, DH2 can overlap with each other. The second driving contact hole DH2 of the passivation layer 118 may include a third opening area OA3 that exposes the first electrode pattern CP1-1 of the first connection electrode CP1 by passing through the passivation layer 118. The third opening area OA3 of the passivation layer 118 may be formed through a wet etching process.

[00122] The third opening area OA3 of the passivation layer 118 may be disposed in the first opening area OA1 of the overcoat layer 130, and may have a size smaller than thatof the first opening area OA1. For example, the first opening area OA1 of the overcoat layer 130 may have a rectangular shape having a first width W1 as shown in FIG. 7, and the third opening area OA3 of the passivation layer 118 may have a rectangular shape having a second width W2 smaller than the first width W1 (e.g., W1>W2), but the present disclosure is not limited thereto. The first opening area OA1 of the overcoat layer 130 and the third opening area OA3 of the passivation layer 118 may be formed in one of various shapes such as a circular shape, an oval shape and a polygonal shape. The first driving contact hole DH1 of the overcoat layer 130 may expose the second driving contact hole DH2 of the passivation layer 118 and a portion of an upper surface of the passivation layer 118.

[00123] The first electrode pattern CP1-1 of the first connection electrode CP1 may be electrically connected to the first anode electrode AE1 of the subpixel SP1-1 provided in the first pixel P1 through the driving contact hole DCT that includes the first driving contact hole DH1 of the overcoat layer 130 and the second driving contact hole DH2 of the passivation layer 118.

[00124] The subpixel SP1-1 provided in the first pixel P1 may include the light emitting element 150 that includes the first anode electrode AE1. The first anode electrode AE1 may include a first light emitting portion AE1-1 disposed in the light emission area EA of the subpixel SP1-1 provided in the first pixel P1 and a first connection portion AE1-2 disposed in the circuit area CA of the subpixel SP1-1 provided in the first pixel P1 (e.g., see FIG. 5A).

[00125] The first connection portion AE1-2 may be protruded from the first light emitting portion AE1-1 and extended in a direction of the circuit area CA. The first connection portion AE1-2 may have one end provided to overlap with the driving contact hole. In detail, the first connection portion AE1-2 may be provided in the driving contact hole that includes the first driving contact hole DH1 of the overcoat layer 130 and the second driving contact hole DH2 of the passivation layer 118. The first connection portion AE1-2 maybe in contact with the first electrode pattern CP1-1 of the first connection electrode CP1 in the driving contact hole (see, e.g., DH1 or DH2). Therefore, the first anode electrode AE1 may be electrically connected to the first connection electrode CP1.

[00126] Meanwhile, as shown in FIG. 5A, the second electrode pattern CP1-2 of the first connection electrode CP1 may be protruded from the first electrode pattern CP1-1 and extended to an area overlapped with the driving transistor DTR. The second electrode pattern CP1-2 of the first connection electrode CP1 may be provided between the welding contact portion WCT and the light emission area EA provided in the subpixel SP1-1 of the first pixel P1. That is, the second electrode pattern CP1-2 of the first connection electrode CP1 may be provided between the welding contact portion WCT and the first light emitting portion AE1-1 of the first anode electrode AE1 provided in the subpixel SP1-1 of the first pixel P1.

[00127] The second electrode pattern CP1-2 of the first connection electrode CP1 may be electrically connected to the second active layer ACT2 disposed in the source area S or the drain area D through a first contact hole CH1 passing through the gate insulating layer 114 as shown in FIG. 6. As a result, the first anode electrode AE1 may be electrically connected to the driving transistor DTR through the first connection electrode CP1. Therefore, the first anode electrode AE1 may be supplied with a pixel power source from the driving transistor DTR.

[00128] Referring back to FIG. 5A, the welding contact portion WCT corresponds to a contact portion for electrically connecting the light emitting element 150 disposed in the light emission area EA of an adjacent subpixel disposed to be adjacent to a specific subpixel with the driving transistor DTR disposed in the circuit area CA of a specific subpixel.

[00129] In detail, the welding contact portion WCT may electrically connect the light emitting element 150 disposed in the light emission area EA of the adjacent subpixel SP1-2 provided in the second pixel P2 with the driving transistor DTR disposed in the circuit area CA of the subpixel SP1-1 provided in the first pixel P1. In this case, the adjacent subpixel SP1-2 provided in the second pixel P2 may be one of the first to fourth subpixels SP1 to SP4 provided in the second pixel P2, and may emit light of the same color as that of the subpixel SP1-1 provided in the first pixel P1.

[00130] In the light emitting display apparatus according to one embodiment of the present disclosure, when a defect occurs in the driving transistor of the adjacent subpixel SP1-2 provided in the second pixel P2, the driving transistor DTR of the subpixel SP1-1 provided in the first pixel P1 may be electrically connected with the light emitting element 150 of the adjacent subpixel SP1-2 through the welding contact portion WCT. Therefore, in the light emitting display apparatus according to one embodiment of the present disclosure, in spite of the defect of the driving transistor, the light emitting element 150 of the adjacent subpixel SP1-2 may operate normally. For example, the welding contact portion WCT can provide a type of fail-over option for allowing the subpixel to be driven by the driving transistor of an adjacent subpixel if its own driving transistor turns out to be defective (e.g., two subpixels of the same color in adjacent rows can be tied together, see FIGS. 1 and 2).

[00131] The welding contact portion WCT may electrically separate the driving transistor DTR of the subpixel SP1-1 provided in the first pixel P1 from the light emitting element 150 of the adjacent subpixel SP1-2 when the driving transistor of the adjacent subpixel SP1-2 provided in the second pixel P2 is normal. On the other hand, when a defect does occurs in the driving transistor of the adjacent subpixel SP1-2 provided in the second pixel P2, the welding contact portion WCT may electrically connect the light emitting element 150 of the adjacent subpixel SP1-2 with the driving transistor DTR of the subpixel SP1-1 provided in the first pixel P1 through laser irradiation.

[00132] The welding contact portion WCT may include at least one insulating layer that includes a second connection electrode CP2 and a welding contact hole.

[00133] Referring to FIGS. 7, 8 and 10, the second connection electrode CP2 may be electrically connected to the driving transistor DTR of the subpixel SP1-1 provided in the first pixel P1. The second connection electrode CP2 may be provided on a different layer from the first connection electrode CP1. In one embodiment, the second connection electrode CP2 may be provided on the same layer as the light shielding layer LS. The second connection electrode CP2 may be extended from the light shielding layer LS and formed as one layer, but is not limited thereto. The second connection electrode CP2 may be formed as one pattern spaced apart from the light shielding layer LS.

[00134] The second connection electrode CP2 may be provided to overlap the welding contact hole. The second connection electrode CP2 maybe spaced apart from the light emitting element 150 of the adjacent subpixel SP1-2 provided in the second pixel P2, especially the second anode electrode AE2 with an insulating layer, for example, the buffer layer 112 interposed therebetween in an area overlapped with the welding contact hole. The second connection electrode CP2 may be electrically separated from the second anode electrode AE2 of the adjacent subpixel SP1-2.

[00135] At least one insulating layer that includes the welding contact hole may be provided over the second connection electrode CP2. The at least one insulating layer may include at least one of an organic insulating layer or an inorganic insulating layer. For example, the organic insulating layer may include the overcoat layer 130, and the inorganic insulating layer may include the passivation layer 118.

[00136] The overcoat layer 130 may include a first welding contact hole WH1 provided on the second connection electrode CP2 and overlapped with at least a portion of the second connection electrode CP2. The first welding contact hole WH1 of the overcoat layer 130 may include a second opening area OA2 passing through the overcoat layer 130, a third inclined area SA3 forming a third inclined surface S3 on the overcoat layer 130 and a fourth inclined area SA4 forming a fourth inclined surface S4 on the overcoat layer 130. The second opening area OA2 of the overcoat layer 130 may be formed through a photo process that uses a full-tone photo mask, and the third inclined area SA3 and the fourth inclined area SA4 of the overcoat layer 130 may be formed through a photo process that uses a half-tone photo mask.

[00137] The first welding contact hole WH1 of the overcoat layer 130 may include a third inclined surface S3 provided on a first side directed toward the driving contact portion DCT and a second side facing the first side, and a fourth inclined surface S4 provided on a third side directed toward the light emission area EA of the subpixel SP1-1 provided in the first pixel P1 and a fourth side facing the third side. The third inclined surface S3 and the fourth inclined surface S4, which are formed in the first welding contact hole WH1 of the overcoat layer 130 according to one embodiment of the present disclosure, may have their respective inclinations different from each other.

[00138] In one embodiment, a third inclination 03 of the third inclined surface S3 may be greater than a fourth inclination 04 of the fourth inclined surface S4. The inclination of each of the third inclined surface S3 and the fourth inclined surface S4 may be determined depending on a width of a half-tone photo mask. As shown in FIG. 7, the third inclined surface S3 may be formed using a half-tone photo mask having a third width W3, and the fourth inclined surface S4 may be formed using a half-tone photo mask having a fourth width W4 greater than the third width W3 (e g., W4>W3). The third inclined surface S3 may be formed to have a steep inclination by using a half-tone photo mask having a small width. On the other hand, the fourth inclined surface S4 may be formed to have a gentle inclination by using a half-tone photo mask having a large width.

[00139] The passivation layer 118 may be provided between the overcoat layer 130 and the second connection electrode CP2. The passivation layer 118 may include a second welding contact hole WH2 that at least partially overlaps the first welding contact hole WH1 of the overcoat layer 130. The second welding contact hole WH2 of the passivation layer 118 may include a fourth opening area OA4 that passes through the passivation layer 118. The fourth opening area OA4 of the passivation layer 118 may be formed through a wet etching process. Also, the first welding contact hole WH1 can be larger than the second welding contact hole WH2, and the first welding contact hole WH1 can be located over the second welding contact hole WH2.

[00140] The fourth opening area OA4 of the passivation layer 118 may be disposed in the second opening area OA2 of the overcoat layer 130, and may have a size smaller than that of the second opening area OA2 (e.g., OA4<OA2). For example, the second opening area OA2 of the overcoat layer 130 may have a rectangular shape having a first width W1 as shown in FIG. 7, and the fourth opening area OA4 of the passivation layer 118 may have a rectangular shape having a second width W2 smaller than the first width W1 (e.g., W2<W1), but the present disclosure is not limited thereto. The second opening area OA2 of the overcoat layer 130 and the fourth opening area OA4 of the passivation layer 118 may be formed in one of various shapes such as a circular shape, an oval shape and a polygonal shape. The first welding contact hole WH1 of the overcoat layer 130 may expose the second welding contact hole WH2 of the passivation layer 118 and a portion of the upper surface of the passivation layer 118.

[00141] When a defect occurs in a driving transistor of an adjacent subpixel SP1-2 provided in a second pixel P2, a welding contact hole including a second welding contact hole WH2 of the passivation layer 118 may correspond to a welding point WP for a laser irradiation to electrically connect a second connection electrode CP2 and a second anode electrode AE2 of the adjacent subpixel SP1-2.

[00142] When the driving transistor of the adjacent subpixel SP1-2 provided in the second pixel P2 is operating as normal (e.g., non-defective), then the second connection electrode CP2 may be electrically separated from the second anode electrode AE2 of the adjacent subpixel SP1-2 with the buffer layer 112 interposed therebetween in the welding contact hole that includes the first welding contact hole WH1 of the overcoat layer 130 and the second welding contact hole WH2 of the passivation layer 118, as shown in FIGS. 8 and 10.

[00143] On the other hand, when a defect occurs in the driving transistor of the adjacent subpixel SP1-2 provided in the second pixel P2, the second connection electrode CP2 may be electrically connected to the second anode electrode AE2 of the adjacent subpixel SP1-2, which has been electrically separated therefrom, by irradiating laser to the welding contact hole as shown in FIG. 11. For example, in this way, the two adjacent subpixels can be tied together and driven by the same driving transistor, and the presence of a dead subpixel can be avoided.

[00144] In detail, the adjacent subpixel SP1-2 provided in the second pixel P2 may include the light emitting element 150 that includes the second anode electrode AE2. The second anode electrode AE2 may include a second light emitting portion AE2-1 disposed in the light emission area EA of the adjacent subpixel SP1-2 provided in the second pixel P2 and a second connection portion AE2-2 disposed in the circuit area GA of the subpixel SP1-1 provided in the first pixel P1.

[00145] The second connection portion AE2-2 may be protruded from the second light emitting portion AE2-1 and extended in the direction of the circuit area CA of the subpixel SP1-1 provided in the first pixel P1. The second connection portion AE2-2 may be provided to have one end overlapped with the welding contact hole. The second connection portion AE2-2 of the second anode electrode AE2 may be provided in the welding contact hole that includes the first welding contact hole WH1 of the overcoat layer 130 and the second welding contact hole WH2 of the passivation layer 118, and may be electrically separated from the second connection electrode CP2 with the buffer layer 112 interposed therebetween in the welding contact hole.

[00146] When a defect is observed in the driving transistor of the adjacent subpixel SP1-2 provided in the second pixel P2 through a defect inspection, laser may be irradiated to the welding contact hole, particularly, the welding point WP corresponding to the second welding contact hole WH2 of the passivation layer 118. Herein, the welding point WP may be specified by using the shape of the second connection electrode CP2.

[00147] As shown in FIG. 12, the second connection electrode CP2 may include a connection electrode portion CP2-1, a first protruding portion CP2-2, and a second protruding portion CP2-3. In FIG. 12, the second connection electrode CP2 is integrally formed with a light shielding layer LS, but not limited thereto. The second connection electrode CP2 may be a metal pattern overlapped with a welding contact portion WCT, and the second connection electrode CP2 may be changed in its position. The second connection electrode CP2 may be a metal pattern provided on a layer different from that of the light shielding layer LS, and the second connection electrode CP2 may be a metal pattern spaced apart from the light shielding layer LS even though the second connection electrode CP2 is provided on the same layer as the light shielding layer LS.

[00148] The connection electrode portion CP2-1 of the second connection electrode CP2 may be overlapped with the welding contact portion WCT. Particularly, when laser is irradiated by a welding process, the connection electrode portion CP2-1 is overlapped with the welding point WP corresponding to the second welding contact hole WH2 of the passivation layer 118, the connection electrode portion CP2-1 may be electrically connected to a second connection portion AE2-2 of the second anode electrode AE2.

[00149] The first protruding portion CP2-2 of the second connection electrode CP2 may protrude in a first direction (for example, X-axis direction) from the connection electrode portion CP2-1. The first protruding portion CP2-2 may be overlapped with the welding contact portion WCT in the first direction (for example, X-axis direction) on a plane. The welding contact portion WCT may be disposed on a first line L1 provided to pass through the center of the first protruding portion CP2-2 and to be parallel to the first direction (for example, X-axis direction). Furthermore, the welding point WP corresponding to the second welding contact hole WH2 of the passivation layer 118 maybe disposed on the first line L1 provided to passthrough the center of the first protruding portion CP2-2 and to be parallel to the first direction (for example, X-axis direction).

[00150] The second protruding portion CP2-3 of the second connection electrode CP2 may protrude in a second direction (for example, Y-axis direction) from the connection electrode portion CP2-1. The second protruding portion CP2-3 may be overlapped with the welding contact portion WCT in the second direction (for example, Y-axis direction) on a plane. The welding contact portion WCT may be disposed on a second line L2 provided to pass through the center of the second protruding portion CP2-3 and to be parallel to the second direction (for example, Y-axis direction). Furthermore, the welding point WP corresponding to the second welding contact hole WH2 of the passivation layer 118 may be disposed on the second line L2 provided to pass through the center of the second protruding portion CP2-3 and to be parallel to the second direction (for example, Y-axis direction).

[00151] As a result, the welding point WP may be disposed in the region in which the first line L1 passing through the center of the first protruding portion CP2-2 and parallel to the first direction (for example, X-axis direction) and the second line L2 passing through the center of the second protruding portion CP2-3 and parallel to the second direction (for example, Y-axis direction) are perpendicular to each other.

[00152] The pattern shape of the second connection electrode CP2 may be recognized on a rear surface of a first substrate 100. Accordingly, the welding point WP may be specified as the region in which the first protruding portion CP2-2 and the second protruding portion CP2-3 of the second connection electrode CP2 are identified through the rear surface of the first substrate 100, and the first line L1 passing through the center of the first protruding portion CP2-2 and parallel to the first direction (for example, X-axis direction) and the second line L2 passing through the center of the second protruding portion CP2-3 and parallel to the second direction (for example, Y-axis direction) are perpendicular to each other.

[00153] When laser is irradiated to the specified welding point WP, the second connection portion AE2-2 of the second anode electrode AE2 may be in contact with the second connection electrode CP2 in the welding contact hole as shown in FIG. 11. Accordingly, the second anode electrode AE2 may be electrically connected to the second connection electrode CP2.

[00154] The light emitting display apparatus according to one embodiment of the present disclosure may increase a repair success rate by specifying the welding point WP through the use of first protruding portion CP2-2 and second protruding portion CP2- 3 of the second connection electrode CP2. Accordingly, the light emitting display apparatus according to one embodiment of the present disclosure may improve a product yield.

[00155] On the other hand, at least one of the first protruding portion CP2-2 and the second protruding portion CP2-3 of the second connection electrode CP2 may be equal to or smaller in width than the second welding contact hole WH2 of the passivation layer 118. Specifically, a width W5 in a direction perpendicular to a protrusion direction of the first protruding portion CP2-2 of the second connection electrode CP2 may be equal to or less than a width of the second welding contact hole WH2 of the passivation layer 118. Alternatively, as shown in FIG. 12, a width W6 in a direction perpendicular to a protrusion direction of the second protruding portion CP2-3 may be equal to or less than the width of the second welding contact hole WH2 of the passivation layer 118.

[00156] In the light emitting display apparatus according to one embodiment of the present disclosure, the width of at least one of the first protruding portion CP2-2 and the second protruding portion CP2-3 of the second connection electrode CP2 is equal to or smaller than the width ofthe second welding contact hole WH2 of the passivation layer 118 so that it is possible to accurately specify the welding point WP.

[00157] According to one embodiment of the present disclosure, the second connection electrode CP2 may further include a concave portion CP2-4. The concave portion CP2-4 may be disposed adjacent to at least one of the first protruding portion CP2-2 and the second protruding portion CP2-3. Specifically, as shown in FIG. 12, the second connection electrode CP2 may include the concave portion CP2-4 which is disposed adjacent to one side of the first protruding portion CP2-2 and is concavely provided in a direction opposite to the protrusion direction of the first protruding portion CP2-2. Alternatively, the second connection electrode CP2 may include the concave portion CP2-4 which is disposed adjacent to one side of the second protruding portion CP2-3 and is concavely provided in a direction opposite to the protrusion direction ofthe second protruding portion CP2-3.

[00158] In the light emitting display apparatus according to one embodiment of the present disclosure, the concave portion CP2-4 is disposed adjacent to at least one of the first protruding portion CP2-2 and the second protruding portion CP2-3 on the second connection electrode CP2 so that the first protruding portion CP2-2 or the second protruding portion CP2-3 may be more easily recognized on the rear surface of the first substrate 100.

[00159] The second connection electrode CP2 may be electrically connected to the driving transistor DTR through the first connection electrode CP1. In one embodiment of the present disclosure, the first connection electrode CP1 may further include a third electrode pattern CP1-3. A first electrode pattern CP1-1, a second electrode pattern CP1-2, and the third electrode pattern CP1-3 of the first connection electrode CP1 may be provided as one layer.

[00160] As shown in FIG. 5A, the third electrode pattern CP1-3 of the first connection electrode CP1 protrudes from the first electrode pattern CP1-1 and extends to a lower region of the welding contact portion WCT. The third electrode pattern CP1-3 of the first connection electrode CPI may be provided between the welding contact portion WCT and the light emission area EA provided in the adjacent subpixel SP1-2 of the second pixel P2. That is, the third electrode pattern CPI-3 of the first connection electrode CP1 may be provided between the welding contact portion WCT and the second light emission portion AE2-1 of the second anode electrode AE2 provided in the adjacent subpixel SP1-2 of the second pixel P2.

[00161] The third electrode pattern CP1-3 of the first connection electrode CPI may be electrically connected to the second connection electrode CP2 through a second contact hole CH2 passing through a buffer layer 112 as shown in FIG. 10. Meanwhile, as shown in FIG. 6, the second electrode pattern CP1-2 of the first connection electrode CP1 may be electrically connected to a second active layer ACT2 disposed in a source region S or a drain region D through a first contact hole CH1 passing through a gate insulating layer 114. As a result, the second anode electrode AE2 may be electrically connected to the driving transistor DTR through the first connection electrode CP1 and the second connection electrode CP2. Accordingly, the second anode electrode AE2 may be supplied with pixel power from the driving transistor DTR provided in the subpixel SP1-1 of the first pixel P1.

[00162] In one or more example embodiments such as those illustrated in FIGS. 5,6, and 8, The first welding contact hole WH1 may be overlapped with at least a portion of the second connection electrode CP2. The second welding contact hole WH2 may be overlapped with the first welding contact hole WH1. The first welding contact hole WH1 may be in the overcoat layer 130. The second welding contact hole WH2 may be in the passivation layer 118. The first electrode pattern CP1-1 may be overlapped with the first driving contact hole DH1. The second electrode pattern CP1-2 may protrude from the first electrode pattern CP1-1 and may be provided above the first welding contact hole WH1. For example, the second electrode pattern CP1-2 may be disposed on the same layer as the first electrode pattern CP1-1 (e.g., on the same layer as the gate electrode GE of the driving transistor DTR), and thus the second electrode pattern CP1-2 may be provided above a bottom portion of the first welding contact hole WH1 (see, e.g., FIGS. 6 and 8). The third electrode pattern CP1-3 may protrude from the first electrode pattern CP1-1 and may be provided under the first welding contact hole WH1. multiple pixels (see, e.g., P of FIG. 1; P1 and P2 of FIG. 5A), and each pixel may include multiple subpixels (see, e.g., SP of FIG. 1; SP1 to SP4 in FIG. 2; SP1-1 and SP1-2 of FIG. 5A). In an example embodiment, a driving transistor (see, e.g., DTR of FIGS. 5 and 6) may be provided in each subpixel of the multiple pixels. In an example embodiment, a light emitting element (see, e.g., 150 of FIG. 3) may be provided in each subpixel of the multiple pixels. In an example embodiment, a light emitting element (see, e.g., 150 of FIG. 3) of each subpixel of the multiple pixels may include an anode electrode (see, e.g., AE of FIGS. 2 and 3; AE1 or AE2 of FIG. 5A, a light emitting layer (see, e.g., EL of FIG. 3), and a cathode electrode (see, e.g., CE of FIG. 3).

[00164] The light emitting display apparatus according to one embodiment of the present disclosure includes a light extraction unit 140 (e.g., light extraction part), thereby improving a light extraction efficiency of light emitted from a light emitting element layer. Accordingly, the light emitting display apparatus according to one embodiment of the present disclosure may have high luminous efficiency even with low power, thereby reducing power consumption.

[00165] In the light emitting display apparatus according to one embodiment of the present disclosure, the driving contact portion DCT and the welding contact portion WCT may be arranged to be adjacent in the first direction (for example, X-axis direction). Specifically, in the light emitting display apparatus according to one embodiment of the present disclosure, the driving contact portion DCT and the welding contact portion WCT may be adjacently arranged on the first line parallel to the first direction (for example, X-axis direction) in a circuit area CA provided in one subpixel area. At least a portion of each of the driving contact portion DCT and the welding contact portion WCT may be overlapped with the first line. Herein, the first line may be a line parallel to the second line in which first to fourth subpixels SP1 to SP4 provided in one pixel P are arranged. That is, the driving contact portion DCT and the welding contact portion WCT may be disposed in the same direction as the direction in which the first to fourth subpixels SP1 to SP4 provided in one pixel P are arranged.

[00166] In the light emitting display apparatus according to one embodiment of the present disclosure, the driving contact portion DCT and the welding contact portion WCT are disposed adjacent to each other in the first direction (for example, X-axis direction) so that it is possible to reduce the size of the circuit area CA. The length of the first direction (for example, X-axis direction) of the circuit area CA is determined by the length of the first direction (for example, X-axis direction) of the light emission area EA, whereby it is impossible to arbitrarily reduce the length of the first direction of the circuit area CA. In addition, when the length of the first direction (for example, X-axis direction) of the circuit area CA is reduced, the length of the first direction (for example, X-axis direction) of the light emission area EA is also reduced, thereby reducing the area of the light emission area EA. Accordingly, it is not preferable to reduce the area of the circuit area CA by reducing the length of the first direction (for example, X-axis direction) of the circuit area CA.

[00167] Meanwhile, the length of the second direction (for example, Y-axis direction) of the circuit area CA may have a reverse relationship with the length of the second direction (for example, Y-axis direction) of the light emission area EA. When the length of the second direction (for example, Y-axis direction) of the circuit area CA is reduced, the length of the second direction (for example, Y-axis direction) of the light emission area EA may be increased. In the light emitting display apparatus according to one embodiment of the present disclosure, the driving contact portion DCT and the welding contact portion WCT are disposed adjacent to each other in the first direction (for example, X-axis direction) so that it is possible to reduce the length of the second direction (for example, Y-axis direction) of the circuit area CA. Accordingly, the light emitting display apparatus according to one embodiment of the present disclosure may increase the length of the second direction (for example, Y-axis direction) of the light emission area EA, and thus may increase the area of the light emission area EA.

[00168] In the light emitting display apparatus according to one embodiment of the present disclosure, inclined surfaces formed in a first driving contact hole DH1 of the driving contact portion DCT and a first welding contact hole WH1 of the welding contact portion WCT may have different slopes.

[00169] In detail, the first driving contact hole DH1 of the driving contact portion DCT passing through an overcoat layer 130 may be provided with a first inclined surface S1 provided on a first side facing the welding contact portion WCT and a second side facing the first side, and may be provided with a second inclined surface S2 provided on a third side facing the light emission area EA of the subpixel SP1-1 provided in the first pixel P1 and a fourth side facing the third side. In the light emitting display apparatus according to one embodiment of the present disclosure, a first inclination 01 of the first inclined surface S1 formed in the first driving contact hole DH1 may be formed to be larger than a second inclination 02 of the second inclined surface S2.

[00170] The first welding contact hole WH1 of the welding contact portion WCT passing through the overcoat layer 130 may be provided with a third inclined surface S3 provided on a first side facing the driving contact portion DCT and a second side facing the first side, and may be provided with a fourth inclined surface S4 provided on a third side facing the light emission area EA of the subpixel SP1-1 of the first pixel P1 and a fourth side facing the third side. In the light emitting display apparatus according to one embodiment of the present disclosure, a third inclination 03 of the third inclined surface S3 formed in the first welding contact hole WH1 may be formed to be larger than a fourth inclination 04 of the fourth inclined surface S4.

[00171] That is, the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT may be formed such that an inclined surface formed between the driving contact portion DCT and the welding contact portion WCT has a high degree of inclination. Accordingly, in the light emitting display apparatus according to one embodiment of the present disclosure, the driving contact portion DCT and the welding contact portion WCT are arranged in the first direction (for example, X-axis direction), whereby it is possible to increase the size of the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT.

[00172] The first driving contact hole DH1 of the driving contact portion DCT formed on the overcoat layer 130 and the first welding contact hole WH1 of the welding contact portion WCT formed on the overcoat layer 130 may increase in size as necessary during a manufacturing process. Particularly, it is possible to increase the size in each of a first opening area OA1 of the first driving contact hole DH1 of the driving contact portion DCT and a second opening area OA2 of the first welding contact hole WH1 of the welding contact portion WCT. When the size of each of the first opening area OA1 of the first driving contact hole DH1 of the driving contact portion DCT and the second opening area OA2 of the first welding contact hole WH1 of the welding contact portion WCT increases, a distance between the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT may be reduced. When a minimum interval is not secured between a half tone mask for forming the inclined surface of the first driving contact hole DH1 of the driving contact portion DCT and a half tone mask for forming the inclined surface of the first welding contact hole WH1 of the welding contact portion WCT, the inclined surface may not be formed in a desired shape between the first driving contact hole DH1 and the first welding contact hole WH1. Thus, it is difficult to stably form the anode electrode in each of the first driving contact hole DH1 and the first welding contact hole WH1.

[00173] In order to stably form the anode electrode, when the minimum interval is secured between the halftone mask for forming the inclined surface of the first driving contact hole DH1 of the driving contact portion DCT and the half tone mask for forming the inclined surface of the first welding contact hole WH1 of the welding contact portion WCT, the length of the first direction (for example, X-axis direction) of the region in which the driving contact portion DCT and the welding contact portion WCT are formed may be increased. As the light emitting display apparatus has a high resolution, the length of the first direction (for example, X-axis direction) of the light emission area EA and the circuit area CA decreases, whereby the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT are not disposed in a line in the first direction (for example, X-axis direction), but disposed in a line in the second direction (for example, Y-axis direction). In this case, the area of the light emission area EA may be reduced by the increase in area of the circuit area CA.

[00174] In the light emitting display apparatus according to one embodiment of the present disclosure, when the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WOT are formed, the inclined surface between the driving contact portion DCT and the welding contact portion WCT has a high degree of inclination so that it is possible to secure the minimum distance between the half tone mask for forming the first inclined surface S1 of the first driving contact hole DH1 of the driving contact portion DCT and the half tone mask for forming the third inclined surface S3 of the first welding contact hole WH1 of the welding contact portion WCT. Accordingly, the inclined surface may be formed in a desired shape between the first driving contact hole DH1 and the first welding contact hole WH1. Accordingly, the anode electrodeformed in each of the first driving contact hole DH1 and the first welding contact hole WH1 may be stably formed. Furthermore, since there is no need to increase the length of the first direction (for example, X-axis direction) of the area in which the driving contact portion DCT and the welding contact portion WCT are formed, the driving contact portion DCT and the welding contact portion WCT may be arranged adjacent to each other in the first direction (for example, X-axis direction) even in a high-resolution light emitting display apparatus.

[00175] Meanwhile, the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT may be formed such that its inclined surface with the light emission area EA having the light extraction unit 140 has a low degree of inclination. Accordingly, in the light emitting display apparatus according to one embodiment of the present disclosure, it is possible to stably form the light extraction unit 140 disposed adjacent to the circuit area CA. That is, in the light emitting display apparatus according to one embodiment of the present disclosure, it is possible to prevent the light extraction efficiency from being reduced by the deformation in shape of the light extraction unit 140 disposed adjacent to the circuit area CA.

[00176] In the light emitting display apparatus according to one embodiment of the present disclosure, the second anode electrode AE2 may be formed to cover the third inclined surface S3 in the first welding contact hole WH1 of the welding contact portion WCT. Accordingly, the light emitting display apparatus according to one embodiment of the present disclosure may preventan etchant from penetrating into the area between the third inclined surface S3 of the overcoat layer 130 and the passivation layer 118 for the process of forming the second anode electrode AE2.

[00177] The overcoat layer 130 formed between the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT may be provided with an edge region of the first connection electrode CP1 as shown in FIG. 8. When the second anode electrode AE2 does not cover the third inclined surface S3 in the first welding contact hole WH1 of the welding contact portion WCT, the etchant may be easily permeated into the passivation layer 118 for the process of forming the second anode electrode AE2. In this case, if a seam exists in the passivation layer 118, the etchant may be permeated into the first connection electrode CP1 through the seam of the passivation layer 118, to thereby damage the first connection electrode CP1.

[00178] In the light emitting display apparatus according to one embodiment of the present disclosure, the third inclined surface S3 of the overcoat layer 130 is configured to have a high degree of inclination in the first welding contact hole WH1 of the welding contact portion WCT and the second anode electrode AE2 is configured to cover the third inclined surface S3 of the overcoat layer 130 so that it is possible to effectively prevent the etchant from penetrating into the area between the third inclined surface S3 of the overcoat layer 130 and the passivation layer 118. Furthermore, in case of the light emitting display apparatus according to one embodiment of the present disclosure, even though the seam exists in the passivation layer 118, it is possible to prevent the etchant from permeating into the first connection electrode CP1 through the seam of the passivation layer 118. As a result, it is possible to prevent the first connection electrode CP1 from being damaged.

[00179] In the light emitting display apparatus according to one embodiment of the present disclosure, the first connection electrode CP1 may be not overlapped with the third inclined surface S3 of the overcoat layer 130. Therefore, the light emitting display apparatus according to one embodiment of the present disclosure may minimize an occurrence of the seam in the passivation layer 118.

[00180] According as the area of the first connection electrode CP1 provided under the overcoat layer 130 formed between the first driving contact hole DH1 of the driving contact portion DCT and the first welding contact hole WH1 of the welding contact portion WCT is reduced, it is possible to reduce a step height of the passivation layer 118 in the boundary region between the third inclined surface S3 of the overcoat layer 130 and the passivation layer 118. Accordingly, a possibility of the occurrence of the seam in the boundary region between the passivation layer 118 and the third inclined surface S3 of the overcoat layer 130 may be reduced. Even if the seam occurs in the passivation layer 118, the distance between the first connection electrode CP1 and the seam of the passivation layer 118 is distant so that the etchant does not easily penetrate.

[00181] In addition, the first connection electrode CP1 is located at the sufficient distance away from the third inclined surface S3 of the overcoat layer 130 in the light emitting display apparatus according to one embodiment of the present disclosure. Thus, even if an error occurs for the process of forming the first driving contact hole DH1 of the driving contact portion DOT and the first welding contact hole WH1 of the welding contact portion WCT, it is possible to secure the proper separation distance from the boundary region between the third inclined surface S3 of the overcoat layer 130 and the passivation layer 118. Accordingly, the light emitting display apparatus according to one embodiment of the present disclosure may minimize damage to the first connection electrode CP1 caused by to the etchant.

[00182] The light emitting display apparatus according to one embodiment of the present disclosure may include a second contact hole CH2 for electrically connecting the second connection electrode CP2 to the first connection electrode CP1 with the welding contact portion WCT interposed therebetween, and a first contact hole CH1 for electrically connecting the first connection electrode CP1 to the driving transistor DTR. Accordingly, the light emitting display apparatus according to one embodiment of the present disclosure may minimize the area of the circuit area CA in the structure in which the driving contact portion DCT and the welding contact portion WCT are arranged in the first direction (for example, X-axis direction), and may greatly increase the area of the light emission area EA.

[00183] Meanwhile, the light emitting display apparatus according to one embodiment of the present disclosure may have a light extraction structure in which a rainbow pattern (or rainbow stain pattern) and a circular ring pattern of a radiation shape, which appear when external light is reflected in the light extraction unit 140, may be minimized. Hereinafter, the light extraction structure for minimizing a rainbow pattern will be described with reference to FIGS. 13A to 13C.

[00184] FIG. 13A is a diagram illustrating a rotation structure of a light extraction unitforeach pixel, FIG. 13B is an enlarged view of a light extraction unit in the pixel of the first row and (j)th column shown in FIG. 13A, and FIG. 13C is an enlarged view of a light extraction unit in the pixel of the (i)th row and (j)th column shown in FIG. 13A.

[00185] In the light emitting display apparatus, when external light is incident on the light extraction unit 140 in a nondriven or off state, reflective light may be generated by the convex portion 143 of the light extraction unit 140, and may be emitted to the outside through the light emitting surface in accordance with a birefringent effect of a thin film. The reflective light may generate a rainbow pattern (or a rainbow stain pattern) which is spread in a radial shape while having a rainbow color due to dispersion characteristics of light according to a difference in refractive angles for each wavelength due to material characteristics of the light emitting element 150 and a refractive index difference for each layer. For example, the reflective light may generate a radial-shaped rainbow pattern and a radial-shaped circular ring pattern in accordance with destructive interference and / or constructive interference of light, thereby reducing black visibility characteristics.

[00186] In the light emitting display apparatus according to one embodiment of the present disclosure, the light extraction unit 140 maybe configured to rotate (or horizontally rotate) at a preset angle based on a random reference point in order to reduce or minimize occurrence of a radial-shaped rainbow pattern and a radial-shaped circular ring pattern due to destructive interference and / or constructive interference of the reflective light in each of the plurality of pixels P. For example, the light extraction unit 140 disposed in one or more of the plurality of pixels P may be configured by being rotated at a rotational angle O 3 greater than 0° and smaller than 60° based on a random reference point in a corresponding pixel area in a unit of one pixel P. In this case, the rotational angle ¢) 3 may be an angle between a first tilt line TL1 and a first straight line SL1 of the concave portions 141 or an angle between a second tilt line TL2 and a second straight line SL2 of the concave portions 141. For example, the rotational angle of the light extraction unit 140 disposed in each of the plurality of pixels P may be set irregularly or randomly along one or more of the first direction (e.g., X-axis direction), the second direction (e.g., Y-axis direction) and a diagonal direction within the range of the rotational angle 3 greater than 0° and smaller than 60°. For example, the random reference point may be a random position within the light emission area EA of each of the first to fourth subpixels SP1 to SP4 of the pixel P or may be a central portion C of any one of the plurality of concave portions 141.

[00187] Referring to FIG. 13A, the light emitting display apparatus according to one embodiment of the present disclosure may include a plurality of pixel blocks PB. The display area DA may be divided or blocked into a plurality of pixel blocks PB. Each of the plurality of pixel blocks PB may include a plurality of pixel groups PG[1,1] to PG[i,j], For example, each of the plurality of pixel blocks PB may include |xj number (or i number of rows and j number of columns) of pixel groups PG[1,1] to PG[i,j],

[00188] The plurality of pixels P disposed in the display area DA may be grouped into a plurality of pixel groups PG[1,1] to PG[i,j], For example, each of the plurality of pixel groups PG[1,1 ] to PG[i,j] may be configured as one pixel P.

[00189] According to one embodiment of the present disclosure, one or more of the light extraction units 140 disposed in the respective pixels P of the plurality of pixel groups PG[1,1] to PG[i,j] may be configured by being rotated at a preset angle based on a random reference point in a corresponding pixel P. For example, in each of the plurality of pixel groups PG[1,1] to PG[i,j], the light extraction unit 140 disposed in each of the plurality of subpixels SP included in the pixel P may be configured to be rotated ata preset angle based on the central portion of any one concave portion 141 in the corresponding subpixel.

[00190] The rotational angles of the light extraction units 140 respectively disposed in the plurality of subpixels SP included in the pixel P of each of the plurality of pixel groups PG[1,1] to PG[i,j] may be the same as each other. For example, the rotational angles of the light extraction units 140 respectively disposed in the plurality of subpixels SP constituting one pixel P may be the same as each other. The rotational angles of the light extraction units 140 respectively disposed in the plurality of subpixels SP constituting one pixel P may be a rotational angle for each pixel. For example, the rotational angle for each pixel of the light extraction unit 140 may refer to a rotational angle of the light extraction unit 140 equally set in each of the plurality of subpixels SP constituting one pixel P.

[00191] For example, the rotational angles for each pixel of the light extraction units 140 disposed in adjacent pixel groups among the pixel groups PG[1,1] to PG[i,j] may be different from each other. For example, the rotational angles for each pixel of the light extraction units 140 respectively disposed in the pixel groups PG[1,1] to PG[i,j] maybe different from each other in 1° or 3° or more. For example, the rotational angles for each pixel of the light extraction units 140 disposed in one or more non-adjacent pixel groups among the pixel groups PG[1,1 ] to PG[i,j] may be 0° or the same as each other, and the rotational angles for each pixel of the light extraction units 140 disposed in the other pixels may be set irregularly or randomly within the range of 0° to 60°. For example, when the rotational angles for each pixel between adjacent light extraction units 140 have a difference of 3° or more, occurrence of a radial-shaped circular ring pattern together with a radiation-shaped rainbow pattern may be effectively suppressed or minimized.

[00192] According to one embodiment of the present disclosure, in each of the plurality of pixel blocks PB, the rotational angles for each pixel block of the light extraction units 140 respectively disposed in the jxj number of pixel groups PG[1,1] to PG[i,j] may be set differently or randomly in a unit of pixel block. For example, the rotational angles for each pixel block of the light extraction units 140 disposed in pixel blocks, which are directly adjacent to each other along any one of the first direction, the second direction and the diagonal direction, among the plurality of pixel blocks PB may have asymmetry, non-regularity or randomness. For example, the rotational angles for each pixel block of the light extraction units 140 disposed in pixel blocks, which are directly adjacent to each other along one of the first direction, the second direction and the diagonal direction, among the plurality of pixel blocks PB may be different from each other as a whole. For example, some of the rotational angles for each pixel block of the light direction and the diagonal direction, among the plurality of pixel blocks PB may be 0° or the same as each other.

[00193] For example, as shown in FIGS. 13B and 130, the rotational angle ¢3 of the light extraction unit 140 disposed in the pixel group PG[1J] of 1 xj (or first row and (j)th column) may be different from the rotational angle ¢3 of the light extraction unit 140 disposed in the pixel group PG[2,j] of 2*j (or second row and (j)th column). For example, the rotational angle ¢3 of the light extraction unit 140 disposed in the pixel group PG[1 j] of 1 xj (or first row and (j)th column) may have a difference of 1° or 3° or more with the rotational angle O 3 of the light extraction unit 140 disposed in the pixel group PG[2,j] of 2*j (or second row and (j)th column). For example, the rotational angle ¢3 of the light extraction unit 140 disposed in the pixel group PG[1,j] of 1xj (or first row and (j)th column) shown in FIG. 13B may be 5°. The rotational angle ¢3 of the light extraction unit 140 disposed in the pixel group PG[2,j] of 2xj (or second row and (j)th column) shown in FIG. 13C may be 15°.

[00194] Therefore, in the light emitting display apparatus according to one embodiment of the present disclosure, the rotational angles for each pixel block of the light extraction units 140 respectively disposed in the plurality of pixel blocks PB may be set differently or randomly. Also, in the light emitting display apparatus according to one embodiment of the present disclosure, the rotational angles for each pixel of the light extraction units 140 respectively disposed in the plurality of pixel groups PG[1,1] to PG[i,j] included in each of the plurality of pixel blocks PB may be set differently or randomly. Furthermore, in the light emitting display apparatus according to one embodiment of the present disclosure, the rotational angles for each subpixel of the light extraction units 140 respectively disposed in the plurality of subpixels included in each of the plurality of pixel groups PG[1,1 ] to PG[i,j] may be set differently or randomly.

[00195] Therefore, in the light emitting display apparatus according to one embodiment of the present disclosure, a diffraction pattern of reflective light generated by reflection in the light extraction units 140 respectively disposed in the plurality of pixels P is changed in a unit of pixel. Therefore, the diffraction pattern of reflective light generated by the light extraction unit 140 of each of the plurality of pixels P may be offset or minimized, or occurrence of a radial-shaped rainbow pattern and a radial circular ring pattern of the reflective light may be suppressed or minimized due to non-regularity or randomness of the diffraction pattern of the reflective light. In the light emitting display apparatus according to one embodiment of the present disclosure, degradation of black visibility characteristics caused by reflection of external light in a non-driving or off state may be reduced, whereby real black may be realized.

[00196] The light emitting display apparatus according to the present disclosure may be applied to all of electronic devices. For example, the light emitting display apparatus according to the present disclosure maybe applied to a mobile device, a video phone, a smart watch, a watch phone, a wearable device, a foldable device, a rollable device, a bendable device, a flexible device, a curved device, an electronic diary, an electronic book, a portable multimedia player (PMP), a personal digital assistant (PDA), an MP3 player, a mobile medical device, a desktop PC, a laptop PC, a netbook computer, a workstation, a navigator, a vehicle navigator, a vehicle display device, a television, a wall paper display device, a signage device, a game device, a laptop computer, a monitor, a camera, a camcorder, home appliances, etc.

[00197] The present disclosure may have high luminous efficiency even with low power by improving the light extraction efficiency of light emitted from a light emitting element layer. Accordingly, the present disclosure can reduce power consumption.

[00198] In addition, according to the present disclosure, a first protruding portion and a second protruding portion are formed in a metal pattern provided under a welding contact portion, and a welding point can be accurately specified by using the first protruding portion and the second protruding portion. Accordingly, the present disclosure can increase the success rate of repair and improve product yield.

[00199] Also, the present disclosure can arrange a driving contact unit and a welding contact unit adjacent to each other in a direction parallel to a direction in which subpixels provided in one pixel are arranged. Accordingly, the area of the circuit area can be reduced, and as a result, the area of the light emitting area can be increased.

[00200] In addition, the present disclosure can secure a minimum interval between a halftone mask for forming an inclined surface of a driving contact hole and a half tone mask for forming an inclined surface of a welding contact hole by forming an inclined surface formed between a driving contact portion and a welding contact portion to have a high degree of inclination when a driving contact hole and a welding contact hole are formed. Accordingly, an inclined surface can be formed in a desired shape between the driving contact hole and the welding contact hole, and an anode electrode formed in each of the driving contact hole and the welding contact hole can be stably formed.

[00201] Also, the present disclosure does not need to increase the horizontal length of an area in which the driving contact portion and the welding contact portion are formed, thereby arranging the driving contact portion and the welding contact portion adjacently in the horizontal direction even in a high-resolution light emitting display apparatus.

[00202] In addition, according to the present disclosure, a light extraction unit disposed adjacent to a circuit area can be stably formed by forming an inclined surface formed between a driving contact hole and a light emitting area having a light extraction unit to have a low slope when forming a driving contact hole and a welding contact hole. Accordingly, the present disclosure can prevent the light extraction efficiency from being reduced while the shape of the light extraction unit disposed adjacent to the circuit region is deformed.

[00203] In addition, in the present disclosure, the anode electrode is formed to cover the inclined surface of the overcoat layer in the welding contact hole, thereby preventing the etchant from penetrating between the inclined surface of the overcoat layer and the passivation layer when the anode electrode is formed. Accordingly, even if there is a seam in the passivation layer, the etchant does not penetrate the first connection electrode through the shim of the passivation layer, and as a result, damage to the first connection electrode can be prevented.

[00204] Also, according to the present disclosure, since the first connection electrode does not overlap with the inclined surface of the overcoat layer formed in the welding contact hole, the occurrence of a seam in the passivation layer in the boundary region between the inclined surface of the overcoat layer and the passivation layer can be minimized. In addition, even if a seam occurs in the passivation layer, since the distance between the first connection electrode and the seam of the passivation layer is increased, the etching solution is not easily permeated into the first connection electrode, thereby minimizing damage to the first connection electrode due to the etchant. It will be apparent to those skilled in the art that various substitutions, modifications, and variations are possible within the scope of the present disclosure without departing from the spirit and scope of the present disclosure. Therefore, the scope of the present disclosure is represented by the following claims, and all changes or modifications derived from the meaning, range and equivalent concept of the claims should be interpreted as being included in the scope of the present disclosure. Also disclosed herein are a number of examples according to the following numbered clauses. Clause 1. A light emitting display apparatus comprising: a first anode electrode provided in a subpixel of a first pixel; a second anode electrode provided in a subpixel of a second pixel disposed adjacent to the first pixel; a first driving transistor for supplying power to the first pixel; a second driving transistor for supplying power to the second pixel; a welding contact portion for electrically connecting the second anode electrode to the first driving transistor when an error occurs in the second driving transistor; and a connection electrode including a connection electrode portion overlapped with the welding contact portion, a first protruding portion protruding from the connection electrode portion in a first direction, and a second protruding portion protruding from the connection electrode portion in a second direction. Clause 2. The light emitting display apparatus according to Clause 1, wherein the welding contact portion is disposed in a region in which a first line and a second line overlap each other, the first line passes through the center of the first protruding portion and parallels to the first direction, and the second line passes through the center of the second protruding portion and parallels to the second direction. Clause 3. The light emitting display apparatus according to Clause 1 or Clause 2, wherein the welding contact portion is disposed between the connection electrode and the second anode electrode. Clause 4. The light emitting display apparatus according to any preceding Clause, wherein the connection electrode is electrically connected to the first driving transistor. Clause 5. The light emitting display apparatus according to any preceding Clause, wherein the second anode electrode includes a second light emitting portion and a second connection portion, the second light emitting portion is provided in the emission area of the subpixel included in the second pixel, and the second connection portion is extending from the second light emitting portion and have one end overlapped with the welding contact portion. Clause 6. The light emitting display apparatus according to Clause 5, wherein the second connection portion is electrically separated from the connection electrode with a buffer layer interposed therebetween in the welding contact portion. Clause 7. The light emitting display apparatus according to Clause 5, wherein the second connection portion is electrically connected to the connection electrode while being in contact with the connection electrode in the welding contact portion when laser is irradiated to the welding contact portion. Clause 8. The light emitting display apparatus according to any preceding Clause, further comprising a light shielding layer disposed under the first driving transistor, wherein the connection electrode is disposed on the same layer as the light shielding layer. Clause 9. The light emitting display apparatus according to Clause 8, wherein the connection electrode is formed as one layer with the light shielding layer. Clause 10. The light emitting display apparatus according to any preceding Clause, further comprising: a passivation layer provided on the connection electrode; and an overcoat layer provided on the passivation layer, wherein the welding contact portion includes a first welding contact hole overlapped with at least a portion of the connection electrode in the overcoat layer and a second welding contact hole overlapped with the first welding contact hole in the passivation layer. Clause 11. The light emitting display apparatus according to Clause 10, wherein the second welding contact hole corresponds to a welding point for irradiating laser to electrically connect the second anode electrode and the second connection electrode. Clause 12. The light emitting display apparatus according to Clause 10 or Clause 11, wherein the second welding contact hole is disposed in a region in which a first line passing through the center of the first protruding portion and parallel to the first direction and a second line passing through the center of the second protruding portion and parallel to the second direction are perpendicular to each other. Clause 13. The light emitting display apparatus according to any of Clauses 10 to 12, wherein at least one of the first protruding portion and the second protruding portion has a width in a direction perpendicular to a protrusion direction, which is equal to or less than a width of the second welding contact hole. Clause 14. The light emitting display apparatus according to any preceding Clause, wherein the connection electrode further includes a concave portion disposed adjacent to at least one of the first protruding portion and the second protruding portion. Clause 15. The light emitting display apparatus according to any preceding Clause, wherein a subpixel included in the first pixel and a subpixel included in the second pixel emit light of the same color. a substrate having a subpixel including an emission area and a circuit area; a light emitting element provided in the emission area on the substrate and configured to include an anode electrode, a light emitting layer, and a cathode electrode; a driving transistor provided in the circuit area on the substrate; a first connection electrode electrically connected to the driving transistor; a second connection electrode provided on a layer different from the first connection electrode and electrically connected to the driving transistor; and an organic insulating layer disposed on the first connection electrode and the second connection electrode and configured to include a first driving contact hole overlapped with at least a portion of the first connection electrode and a first welding contact hole overlapped with at least a portion of the second connection electrode, wherein the second connection electrode includes a connection electrode portion overlapped with the first welding contact hole, a first protruding portion protruding from the connection electrode portion in a first direction, and a second protruding portion protruding from the connection electrode portion in a second direction. Clause 17. The light emitting display apparatus according to Clause 16, wherein the first welding contact hole is disposed in a region in which a first line and a second line overlap each other, the first line passes through the center of the first protruding portion and parallels to the first direction, and the second line passes through the center of the second protruding portion and parallels to the second direction. Clause 18. The light emitting display apparatus according to Clause 16 or Clause 17, further comprising an inorganic insulating layer disposed between the organic insulating layer and the first connection electrode and configured to include a second driving contact hole overlapped with the first driving contact hole and a second welding contact hole overlapped with the first welding contact hole. Clause 19. The light emitting display apparatus according to Clause 18, wherein the second welding contact hole is disposed in a region in which a first line and a second line overlap each other, the first line passes through the center of the first protruding portion and parallels to the first direction, and the second line passes through the center of the second protruding portion and parallels to the second direction. Clause 20. The light emitting display apparatus according to Clause 18, wherein the anode electrode of the light emitting element provided in the subpixel is disposed while being overlapped with the first driving contact hole and the second driving contact hole, and the anode electrode of the light emitting element provided in the adjacent subpixel disposed adjacent to the subpixel in the second direction is overlapped with the first welding contact hole and the second welding contact hole. Clause 21. The light emitting display apparatus according to Clause 20, wherein the anode electrode of the light emitting element provided in the subpixel is electrically connected to the first connection electrode while being in contact with the first connection electrode in the second driving contact hole, and the anode electrode of the light emitting element provided in the adjacent subpixel is spaced apart from the second connection electrode with a buffer layer therebetween in the second welding contact hole to be electrically separated from the second connection electrode. Clause 22. The light emitting display apparatus according to Clause 20, wherein the second welding contact hole corresponds to a welding point for irradiating laser to electrically connect the anode electrode of the light emitting element provided in the adjacent subpixel to the second connection electrode. Clause 23. The light emitting display apparatus according to any of Clauses 16 to 22, wherein the first driving contact hole and the first welding contact hole are disposed adjacent to each other in the first direction. Clause 24. The light emitting display apparatus according to any of Clause 16 to 23, wherein the first connection electrode is disposed on the same layer as a gate electrode of the driving transistor, and the second connection electrode is disposed on a layer between the substrate and the driving transistor. Clause 25. The light emitting display apparatus according to Clause 24, wherein the first connection electrode includes a first electrode pattern overlapped with the first driving contact hole, a second electrode pattern protruding from the first electrode pattern and provided above the first welding contact hole, and a third electrode pattern protruding from the first electrode pattern and provided under the first welding contact hole. Clause 26. The light emitting display apparatus according to Clause 25, wherein the first electrode pattern of the first connection electrode is electrically connected to the anode electrode of the light emitting element provided in the subpixel through the first driving contact hole, and the second electrode pattern of the first connection electrode is electrically connected to the driving transistor through a first contact hole. Clause 27. The light emitting display apparatus according to Clause 25, wherein the third electrode pattern of the first connection electrode is electrically connected to the second connection electrode through a second contact hole.

Claims

1. A light emitting display apparatus comprising:a first anode electrode provided in a subpixel of a first pixel;a second anode electrode provided in a subpixel of a second pixel disposed adjacent to the first pixel;a first driving transistor for supplying power to the first pixel;a second driving transistor for supplying power to the second pixel;a welding contact portion for electrically connecting the second anode electrode to the first driving transistor; anda connection electrode including a connection electrode portion overlapped with the welding contact portion, a first protruding portion protruding from the connection electrode portion in a first direction, and a second protruding portion protruding from the connection electrode portion in a second direction.

2. The light emitting display apparatus according to claim 1, wherein the welding contact portion is disposed in a region in which a first line and a second line overlap each other,the first line passes through a center of the first protruding portion and parallels to the first direction, andthe second line passes through a center of the second protruding portion and parallels to the second direction.

3. The light emitting display apparatus according to claim 1 or claim 2, wherein the welding contact portion is disposed between the connection electrode and the second anode electrode.

4. The light emitting display apparatus according to any preceding claim, wherein the connection electrode is electrically connected to the first driving transistor.

5. The light emitting display apparatus according to any preceding claim, wherein the second anode electrode includes a second light emitting portion and a second connection portion,the second light emitting portion is provided in an emission area of the subpixel included in the second pixel, andthe second connection portion extends from the second light emitting portion and one end of the second connectionportion overlaps with the welding contact portion.

6. The light emitting display apparatus according to claim 5, wherein the second connection portion is electrically separated from the connection electrode with a buffer layer interposed therebetween in the welding contact portion.

7. The light emitting display apparatus according to claim 5, wherein the second connection portion is electrically connected to the connection electrode while being in contact with the connection electrode in the welding contact portion.

8. The light emitting display apparatus according to any preceding claim, further comprising a light shielding layer disposed under the first driving transistor, wherein the connection electrode is disposed on a same layer as the light shielding layer.

9. The light emitting display apparatus according to claim 8, wherein the connection electrode is formed as one layer with the light shielding layer.

10. The light emitting display apparatus according to any preceding claim, further comprising:a passivation layer provided on the connection electrode; andan overcoat layer provided on the passivation layer,wherein the welding contact portion includes a first welding contact hole overlapped with at least a portion of the connection electrode in the overcoat layer and a second welding contact hole overlapped with the first welding contact hole in the passivation layer.

11. The light emitting display apparatus according to claim 10, wherein the second welding contact hole corresponds to a welding point for irradiating laser to electrically connect the second anode electrode and the connection electrode.

12. The light emitting display apparatus according to claim 10 or claim 11, wherein the second welding contacthole is disposed in a region in which a first line passing through the center of the first protruding portion and parallel to the first direction and a second line passing through the center of the second protruding portion and parallel to the second direction are perpendicular to each other.

13. The light emitting display apparatus according to any of claims 10 to 12, wherein at least one of the first protruding portion and the second protruding portion has a width in a direction perpendicular to a protrusion direction, which is equal to or less than a width of the second welding contact hole.

14. The light emitting display apparatus according to any preceding claim, wherein the connection electrode further includes a concave portion disposed adjacent to at least one of the first protruding portion and the second protruding portion.

15. The light emitting display apparatus according to any preceding claim, wherein a subpixel included in the first pixel and a subpixel included in the second pixel emit light of the same color.

16. A light emitting display apparatus comprising:a substrate having a subpixel including an emission area and a circuit area;a light emitting element provided in the emission area on the substrate and configured to include an anode electrode, a light emitting layer, and a cathode electrode;a driving transistor provided in the circuit area on the substrate;a first connection electrode electrically connected to the driving transistor;a second connection electrode provided on a layer different from the first connection electrode and electrically connected to the driving transistor; andan organic insulating layer disposed on the first connection electrode and the second connection electrode andconfigured to include a first driving contact hole overlapped with at least a portion of the first connection electrode and a first welding contact hole overlapped with at least a portion of the second connection electrode,wherein the second connection electrode includes a connection electrode portion overlapped with the first welding contact hole, a first protruding portion protruding from the connection electrode portion in a first direction, and a second protruding portion protruding from the connection electrode portion in a second direction.

17. The light emitting display apparatus according to claim 16, wherein the first welding contact hole is disposed in a region in which a first line and a second line overlap each other,the first line passes through a center of the first protruding portion and parallels to the first direction, and the second line passes through a center of the second protruding portion and parallels to the second direction.

18. The light emitting display apparatus according to claim 16 or claim 17, further comprising an inorganic insulating layer disposed between the organic insulating layer and the first connection electrode and configured to include a second driving contact hole overlapped with the first driving contact hole and a second welding contact hole overlapped with the first welding contact hole.

19. The light emitting display apparatus according to claim 18, wherein the second welding contact hole is disposed in a region in which a first line and a second line overlap each other,the first line passes through a center of the first protruding portion and parallels to the first direction, and the second line passes through a center of the second protruding portion and parallels to the second direction.

20. The light emitting display apparatus according to claim 18 or claim 19, wherein the anode electrode of the light emitting element provided in the subpixel is disposed while being overlapped with the first driving contact hole and the second driving contact hole, andan anode electrode of another light emitting element provided in an adjacent subpixel disposed adjacent to thesubpixel in the second direction is overlapped with the first welding contact hole and the second welding contact hole.

21. The light emitting display apparatus according to claim 20, wherein the anode electrode of the light emitting element provided in the subpixel is electrically connected to the first connection electrode while being in contact with the first connection electrode in the second driving contact hole, andthe anode electrode of the another light emitting element provided in the adjacent subpixel is spaced apart from the second connection electrode with a buffer layer in the second welding contact hole to be electrically separated from the second connection electrode;the buffer layer is disposed between the second connection electrode and the anode electrode of the another light emitting element; and / orwherein the second welding contact hole corresponds to a welding point for irradiating laser to electrically connect the anode electrode of the another light emitting element provided in the adjacent subpixel to the second connection electrode.

22. The light emitting display apparatus according to any of claims 16 to 21, wherein the first driving contact hole and the first welding contact hole are disposed adjacent to each other in the first direction.

23. The light emitting display apparatus according to any of claim 16 to 22, wherein the first connection electrode is disposed on a same layer as a gate electrode of the driving transistor, and the second connection electrode is disposed on a layer between the substrate and the driving transistor;optionally wherein the first connection electrode includes a first electrode pattern overlapped with the first driving contact hole, a second electrode pattern protruding from the first electrode pattern and provided above the first welding contact hole, and a third electrode pattern protruding from the first electrode pattern and provided under the first welding contact hole.

24. The light emitting display apparatus according to claim 23, wherein the first electrode pattern of the firstconnection electrode is electrically connected to the anode electrode of the light emitting element provided in the subpixel through the first driving contact hole, and the second electrode pattern of the first connection electrode is electrically connected to the driving transistor through a first contact hole.

25. The light emitting display apparatus according to claim 23 or claim 24, wherein the third electrode pattern of the first connection electrode is electrically connected to the second connection electrode through a second contact hole.

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