Monolithic anisotropic substrate support

Abstract

The substrate support includes a monolithic anisotropic body having a first layer, a second layer, and an intermediate layer. The first layer is formed of a first material and has an RF electrode and a clamp electrode disposed therein. The second layer is formed of either the first material or a second material and has a heating element disposed therein. The intermediate layer is formed of a material different from the first and second layers, such that the thermal energy conductivity of the intermediate layer differs from that of at least one of the first material and the second material, and / or the electrical energy conductivity of the intermediate layer differs from that of at least one of the first material and the second material. The intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the intermediate layer.

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 62 / 923,912, filed October 21, 2019, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to an electrostatic chuck for a substrate processing system. [Background technology]

[0003] The discussion of the background art provided herein is intended to present the contents of the present disclosure generally, and the inventions of the presently listed inventors are not admitted expressly or impliedly as prior art to the present disclosure, to the extent that they are described in this Background section, or in aspects of the description that are not prior art at the time of filing.

[0004] Monolithic A substrate support (e.g., Monolithic Pedestal or Monolithic The electrostatic chuck may comprise a bulk ceramic body in which an electrostatic clamp, a radio frequency (RF) electrode, and one or more heating elements are disposed. Monolithic The substrate support can suffer from localized hot spots that alter the speed of processes being performed on the substrate. Two causes of hot spots are poor diffusion of thermal energy and non-reproducible placement of the heating elements within the ceramic body.

[0005] Thicker ceramic bodies are typically able to spread thermal energy more evenly than thinner ceramic bodies. However, increasing the thickness of the ceramic body increases the amount of material used, increasing material and manufacturing costs. Increasing the thickness can also adversely affect the repeatability of placement of internal components (e.g., electrodes and heating elements), which can in turn adversely affect throughput in the manufacture of substrate supports. For example, raw material powders can change during manufacture, causing changes in placement of internal components. The amount of change and / or the likelihood of change occurring increases with increasing ceramic body thickness. Ceramic substrate supports are also susceptible to mechanical failure due to thermal stresses. Summary of the Invention

[0006] High frequency electrodes, clamp electrodes, heating elements, and Monolithic Anisotropic (Anisotropic body with a monolithic structure) A substrate support is provided comprising: Monolithic The anisotropic body includes a first layer, a second layer, and a first intermediate layer. The first layer is formed from a first material, and a high-frequency electrode and a clamp electrode are disposed therein. The second layer is formed from a first material or a second material, and a heating element is disposed therein. The first intermediate layer is formed from a material different from the first layer and the second layer such that the thermal energy conductivity of the first intermediate layer is different from that of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from that of at least one of the first material and the second material. The first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer.

[0007] In other features, the first intermediate layer is formed of a material different from the first layer and the second layer such that a thermal energy conductivity of the first intermediate layer differs from a thermal energy conductivity of at least one of the first material and the second material, and such that an electrical energy conductivity of the first intermediate layer differs from an electrical conductivity of at least one of the first material and the second material.

[0008] In other features, the first intermediate layer is formed of a material different from the first layer and the second layer such that a thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material, and / or an electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of the first material and the second material.

[0009] In other features, the first intermediate layer has a coefficient of thermal expansion different from a coefficient of thermal expansion of at least one of the first material and the second material.

[0010] In other features, the first intermediate layer has an inner portion and an outer portion, the inner portion is formed of a different material than the first layer and the second layer, and the outer portion is formed of the first material or the second material.

[0011] In other features, the substrate support further comprises a metal layer disposed between the first intermediate layer and the second layer, hi other features, the metal layer is implemented as a metal screen or metal mesh.

[0012] In other features, the second layer is formed of the first material.In other features, the first intermediate layer includes an inner portion covered by the cover layer and an outer portion surrounding the inner portion.

[0013] In other features, the first intermediate layer comprises: Monolithic The anisotropic first layer, the second layer, and the first intermediate layer have at least one of a density, a porosity per unit area, or a number of cracks per unit area that are different from each other.

[0014] In other features, the first intermediate layer comprises: Monolithic The first layer, the second layer, and the first intermediate layer are consolidated prior to consolidation to form an anisotropic body.

[0015] In other features, the substrate support further comprises a second intermediate layer disposed below the second layer and formed of a material different from the first layer and the second layer, such that a thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and an electrical energy conductivity of the second intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0016] In other features, the second intermediate layer has an inner portion and an outer portion, the inner portion is formed of a different material than the first layer and the second layer, and the outer portion is formed of the first material or the second material.

[0017] In other features, the substrate support further comprises a first metal layer disposed between the first intermediate layer and the second layer, and a second metal layer disposed between the second layer and the second intermediate layer.

[0018] In other features, the first intermediate layer comprises a first inner portion covered by the first coating layer and a first outer portion surrounding the first inner portion, and the second intermediate layer comprises a second inner portion covered by the second coating layer and a second outer portion surrounding the second inner portion.

[0019] In other features, the first intermediate layer comprises a first solid structure and the second intermediate layer comprises a second solid structure. The first solid structure and the second solid structure comprise: Monolithic The anisotropic first layer, the second layer, the remainder of the first intermediate layer, and the remainder of the second intermediate layer have at least one of a density, a porosity per unit area, or a number of cracks per unit area that are different from each other.

[0020] In other features, the first intermediate layer comprises a first solid structure and the second intermediate layer comprises a second solid structure, Monolithic The first layer, the second layer, the first intermediate layer, and the second intermediate layer are consolidated prior to consolidation to form an anisotropic body.

[0021] In another feature, Monolithic The anisotropic body is shaped similarly to the heating element and includes a hollow interior region that constrains the heating element. Monolithic The anisotropic body is Monolithic A fastener is provided to limit movement of the heating element relative to the anisotropic body. In other features, the first intermediate layer comprises at least one of a ring and a void.

[0022] In other features, the first intermediate layer comprises voids filled with an insulating gas or a conductive fluid. Monolithic The anisotropic body includes a vertically extending beam, the beam being formed of a different material than the first layer and the second layer.

[0023] In another feature, a method of forming a substrate support is provided that includes placing a first material and a first object in a first mold to form an initial preform, sintering the initial preform to provide a first initial internal structure, placing the first initial internal structure, a second material, and a second object in a second mold to form a final preform, and sintering the final preform to provide the substrate support. The first object and the second object include a heating element, a clamping electrode, and a radio frequency electrode.

[0024] In other features, the method further comprises applying pressure to the initial preform before and / or during sintering of the initial preform. In other features, the method further comprises not applying pressure to the initial preform before and / or during sintering of the initial preform. In other features, the method further comprises applying pressure to the final preform before and / or during sintering of the final preform.

[0025] In other features, the method further comprises applying no pressure to the final preform before and / or during sintering of the final preform. In other features, the method further comprises forming an internal structure comprising an initial internal structure. Forming the final preform comprises placing the internal structure in a second mold.

[0026] In other features, the method further includes concentrically disposing the first initial internal structure and at least one of a third material and a third object in a third mold to form an intermediate preform, and sintering the intermediate preform to form the intermediate internal structure. Forming the final preform includes disposing the intermediate internal structure in a second mold.

[0027] In other features, the method further includes processing the initial internal structure prior to forming the final preform and placing the initial internal structure in the second mold. In other features, the substrate support has a green sheet structure. In other features, forming the initial preform includes forming a laminate.

[0028] In other features, a radio frequency electrode, a clamp electrode, a heating element, and Monolithic A substrate support comprising an anisotropic body is provided. Monolithic The anisotropic body includes one or more first layers formed of a first material and having a high-frequency electrode and a clamp electrode, one or more second layers formed of the first material or a second material and having a heating element, and a first intermediate layer. The first intermediate layer is disposed between the one or more first layers and the one or more second layers and is formed of a material different from the one or more first layers and the one or more second layers such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0029] In other features, the first intermediate layer is formed of a material different from the one or more first layers and the one or more second layers, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and such that the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of at least one of the first material and the second material.

[0030] In other features, the first intermediate layer is formed of a material different from the one or more first layers and the one or more second layers such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material, and / or the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of the first material and the second material.

[0031] In other features, the first intermediate layer has a coefficient of thermal expansion different from a coefficient of thermal expansion of at least one of the first material and the second material.

[0032] In other features, the first intermediate layer has an inner portion and an outer portion, the inner portion being formed of a material different from the one or more first layers and the one or more second layers, and the outer portion being formed of the first material or the second material.

[0033] In other features, the substrate support further comprises a metal layer disposed between the first intermediate layer and the one or more second layers. In other features, the metal layer is implemented as a metal screen or metal mesh. In other features, the one or more second layers are formed of the first material.

[0034] In other features, the first intermediate layer includes an inner portion covered by the first coating layer and an outer portion surrounding the inner portion. Monolithic The one or more first layers, the one or more second layers, and the first intermediate layer are consolidated prior to consolidation to form an anisotropic body.

[0035] In other features, the substrate support further comprises a second intermediate layer disposed below the one or more second layers and formed of a material different from the one or more first layers and the one or more second layers, such that a thermal energy conductivity of the second intermediate layer is different from a thermal energy conductivity of at least one of the first material and the second material, and / or an electrical energy conductivity of the second intermediate layer is different from an electrical conductivity of the first material and / or the second material.

[0036] In other features, the second intermediate layer comprises an inner portion and an outer portion, the inner portion being formed of a material different from the one or more first layers and the one or more second layers, and the outer portion being formed of the first material or the second material.

[0037] In other features, the substrate support further comprises a first metal layer disposed between the first intermediate layer and the one or more second layers, and a second metal layer disposed between the one or more second layers and the second intermediate layer.

[0038] In other features, the first intermediate layer comprises a first inner portion covered by the first coating layer and a first outer portion surrounding the first inner portion, and the second intermediate layer comprises a second inner portion covered by the second coating layer and a second outer portion surrounding the second inner portion.

[0039] In other features, the first intermediate layer comprises a first solid structure and the second intermediate layer comprises: Monolithic The one or more first layers, the one or more second layers, the first intermediate layer, and the second solid structure are consolidated prior to consolidation of the second intermediate layer to form an anisotropic body. Monolithic The anisotropic body is shaped similarly to the heating element and includes a hollow interior region that constrains the heating element. Monolithic The anisotropic body is Monolithic A fastener is provided to limit movement of the heating element relative to the anisotropic body.

[0040] In other features, the first intermediate layer comprises at least one of a ring and a void.In other features, the first intermediate layer comprises a void filled with an insulating gas or a conductive fluid.

[0041] In another feature, Monolithic The anisotropic body comprises a vertical beam, the beam being formed of a different material than the one or more first layers and the one or more second layers.

[0042] In other features, a radio frequency electrode, a clamp electrode, a heating element, and Monolithic A substrate support comprising an anisotropic body is provided. Monolithic The anisotropic body includes one or more first layers formed of a first material and having a high-frequency electrode and a clamp electrode, one or more second layers formed of the first material or a second material and having a heating element, and an intermediate layer. The intermediate layer is formed of a material different from the one or more first layers and the one or more second layers such that the thermal energy conductivity of the intermediate layer is different from the thermal energy conductivity of at least one of the first material and the second material, and the electrical energy conductivity of the intermediate layer is different from the electrical conductivity of at least one of the first material and the second material. The one or more second layers are disposed between the one or more first layers and the intermediate layer.

[0043] In other features, the intermediate layer is formed of a material different from the one or more first layers and the one or more second layers such that a thermal energy conductivity of the intermediate layer differs from a thermal energy conductivity of at least one of the first material and the second material, and such that an electrical energy conductivity of the intermediate layer differs from an electrical conductivity of at least one of the first material and the second material.

[0044] In other features, the intermediate layer is formed of a material different from the one or more first layers and the one or more second layers such that a thermal energy conductivity of the intermediate layer differs from a thermal energy conductivity of the first material and the second material, and / or an electrical energy conductivity of the intermediate layer differs from an electrical conductivity of the first material and the second material.

[0045] In other features, the intermediate layer has a coefficient of thermal expansion different from the coefficient of thermal expansion of the first material and / or the second material. In other features, the intermediate layer has an inner portion and an outer portion. The inner portion is formed of a material different from the one or more first layers and the one or more second layers. The outer portion is formed of the first material or the second material.

[0046] In other features, the substrate support further comprises a metal layer disposed between the intermediate layer and the one or more first layers or the one or more second layers. In other features, the metal layer is implemented as a metal screen or metal mesh. In other features, the one or more second layers are formed of the material. In other features, the intermediate layer comprises an inner portion covered by the cover layer and an outer portion surrounding the inner portion.

[0047] In other features, the intermediate layer comprises: Monolithic The one or more first layers, the one or more second layers, and the intermediate layer are consolidated prior to consolidation to form an anisotropic body. Monolithic The anisotropic body is shaped similarly to the heating element and includes a hollow interior region that constrains the heating element. Monolithic The anisotropic body is Monolithic A fastener is provided to limit movement of the heating element relative to the anisotropic body. In other features, the intermediate layer comprises at least one of a ring and a void. In other features, the intermediate layer comprises a void filled with an insulating gas or a conductive fluid.

[0048] In another feature, Monolithic The anisotropic body includes a vertically extending beam, the beam being formed of a material different from the one or more first layers and the one or more second layers.

[0049] In another feature, a method of forming a substrate support is provided that includes arranging a first material and one or more first objects in a first mold to form an initial preform, sintering the initial preform to provide a first initial internal structure, and performing a second preform operation including arranging a first initial internal structure, a second material, and one or more second objects in a second mold to form a final preform, and sintering the final preform to provide the substrate support. The one or more first objects and the one or more second objects include a heating element, a clamping electrode, and a radio frequency electrode.

[0050] In other features, the method further comprises applying pressure to the initial preform before and / or during sintering of the initial preform. In other features, the method further comprises not applying pressure to the initial preform before and / or during sintering of the initial preform. In other features, the method further comprises applying pressure to the final preform before and / or during sintering of the final preform. In other features, the method further comprises not applying pressure to the final preform before and / or during sintering of the final preform.

[0051] In other features, the method further includes forming an internal structure comprising an initial internal structure. The second preform operation includes placing the internal structure in a second mold.

[0052] In other features, the method further includes consolidating the first initial internal structure and at least one of a third material and one or more third objects in a third mold to form an intermediate preform, and sintering the intermediate preform to form the intermediate internal structure. The second preform operation includes placing the intermediate internal structure in the second mold.

[0053] In other features, the method further includes processing the initial internal structure before performing the second pre-form operation to place the initial internal structure in the second mold. In other features, the substrate support has a green sheet structure. In other features, the first pre-form operation includes forming a laminate.

[0054] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0055] The present disclosure will become better understood from the detailed description and the accompanying drawings, in which:

[0056] [Figure 1] FIG. 1 is a functional block diagram of an exemplary substrate processing system including a monolithic anisotropic substrate support having a layered and / or stratified structure, in accordance with an example of the present disclosure.

[0057] [Diagram 2] 2A-2C are cross-sectional side views of another exemplary monolithic anisotropic substrate support having a layered and / or stratified structure including a metal layer, according to examples of the present disclosure.

[0058] [Diagram 3] 2A-2C are cross-sectional side views of another exemplary monolithic anisotropic substrate support having a layered and / or stratified structure including a cover layer, according to examples of the present disclosure.

[0059] [Figure 4] FIG. 2 is a cross-sectional side view of an exemplary alternative monolithic anisotropic substrate support having a layered and / or layered structure to provide a constrained structure, according to an example of the present disclosure.

[0060] [Diagram 5]FIG. 13 is a cross-sectional side view of another exemplary monolithic anisotropic substrate support having a layered and / or layered structure, providing a constrained structure, and including fasteners, according to an example of the present disclosure.

[0061] [Figure 6] 1A is a cross-sectional side view of an exemplary alternative monolithic anisotropic substrate support having a layered and / or layered structure including a ring, according to an example of the present disclosure.

[0062] [Figure 7] 1A is a cross-sectional side view of an exemplary alternative monolithic anisotropic substrate support having a layered and / or layered structure including beams, according to an example of the present disclosure.

[0063] [Figure 8] FIG. 2 is a cross-sectional side view of an exemplary alternative monolithic anisotropic substrate support having a layered and / or layered structure including plates and ceramic substrates having different thermal expansion coefficients, according to an example of the present disclosure.

[0064] [Figure 9] 1A-1C are cross-sectional side views of exemplary alternative monolithic anisotropic substrate supports having layered and / or stratified structures including voids, according to examples of the present disclosure.

[0065] [Figure 10] 1 illustrates an example of a substrate support manufacturing system including a substrate support controller, according to an example of the present disclosure.

[0066] [Figure 11] A method of forming a substrate support according to an example of the present disclosure.

[0067] In the drawings, reference characters may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0068] Ceramic substrate supports formed by "hot pressing" suffer from limited capacity. During hot pressing, materials (e.g., powders) and other elements (such as electrodes and heating elements) are placed in a mold to provide a preform. The temperature of the preform and the pressure applied to the preform are increased to sinter the preform and provide a solid unitary object (or substrate support). During hot pressing, the material creeps and fuses into a solid. The resulting structure of the ceramic substrate support is constrained by the mass of the preform, which is limited by the capacity of the mold and the density of the preform before sintering.

[0069] Ceramic electrostatic chucks with integrated heating elements suffer from electrical energy losses from electronic conductivity between the heating element and the clamping and RF electrodes (collectively, "electrodes"). A short circuit between the electrodes and the heating element often results in a large amount of clamping voltage and / or power being dissipated. The electrical losses limit the clamping voltage that can be applied and may require a power supply to provide a higher output current level at a particular voltage than would otherwise be required.

[0070] The examples described herein have multiple layers. Monolithic An anisotropic substrate support is included. Monolithic The anisotropic substrate support is a conventional Monolithic The layers are formed to provide improved thermal energy dissipation over the substrate support. Examples include layers formed of different materials having different electrical and / or thermal conductivities. The layers are formed by sintering preforms, which may include electrical components, voids, channels, powders, structural elements (e.g., plates, rings, beams, voids, etc.), pre-sintered and / or pre-pressed bodies, and / or other items. The preforms may be sintered by heat pressing as described above.

[0071] Examples provide improved thermal energy spreading throughout the substrate support. The resulting layers of the substrate support comprise different materials and / or structures to provide improved thermal energy spreading within a given overall thickness of the substrate support. Examples also prevent electrical dissipation between conductive elements of the substrate support.

[0072] FIG 1 illustrates a substrate processing system 100 with a substrate support shown as ESC 101. ESC 101 may be configured the same as or similar to any substrate support disclosed herein, including the substrate supports shown in FIGS. 2-9. Although FIG 1 illustrates a capacitively coupled plasma (CCP) system, the embodiments disclosed herein may also include a transformer coupled plasma (TCP) system, an inductively coupled plasma (ICP) system, and / or a Monolithic The present embodiment is applicable to other systems and plasma sources that include a substrate support. The present embodiment is applicable to plasma-enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, atomic layer deposition (ALD) processes, and / or other processes where the substrate temperature is 450° C. or higher. The ESC101 is Monolithic The body 102 may be made of different materials and / or different ceramic compositions. The body 102 may include, for example, aluminum nitride (AlN3), aluminum oxide (Al2O3), and / or aluminum oxynitride (AlON).

[0073] The substrate processing system 100 includes a process chamber 104. The ESC 101 is surrounded by the process chamber 104. The process chamber 104 also surrounds other components such as the upper electrode 105 and contains the RF plasma. During operation, a substrate 107 is placed on the ESC 101 and is electrostatically clamped thereto. By way of example only, the upper electrode 105 may include a showerhead 109 for introducing and distributing gases. The showerhead 109 may include a stem portion 111 having one end connected to a top surface of the process chamber 104. The showerhead 109 is generally cylindrical and flares radially outward from the other end of the stem portion 111 away from the top surface of the process chamber 104. The substrate-facing surface of the showerhead 109 includes holes through which process or purge gases flow. Alternatively, the upper electrode 105 may include a conductive plate and gases may be introduced in another manner.

[0074] The ESC 101 may include a temperature control element (TCE), also referred to as a heating element. By way of example, FIG. 1 illustrates the ESC 101 with a heating element 110. The heating element 110 receives electrical power and heats the ESC 101. In one embodiment, the ESC 101 includes one or more gas passages 115 for flowing a backside gas to the backside of the substrate 107.

[0075] The RF generation system 120 generates and outputs an RF voltage to the upper electrode 105 and one or more lower electrodes 116 in the ESC 101. Either the upper electrode 105 or the ESC 101 may be DC grounded, AC grounded, or at floating potential. By way of example only, the RF generation system 120 may include one or more RF generators 122 (e.g., capacitively coupled plasma RF power generators, bias RF power generators, and / or other RF power generators) that generate RF voltages that are supplied to the upper electrode 105 and / or the ESC 101 by one or more matching distribution networks 124. Electrodes that receive RF signals, RF voltages, and / or RF power are referred to as RF electrodes. By way of example, a plasma RF generator 123, a bias RF generator 125, a plasma RF matching network 127, and a bias RF matching network 129 are shown. The plasma RF generator 123 may be a high power RF generator that generates, for example, 6-10 kilowatts (kW) or more of power. The bias RF matching network supplies power to the RF electrodes, such as RF electrode 116 .

[0076] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more precursors and gas mixtures thereof. The gas sources 132 may also supply an etching gas, a carrier gas, and / or a purge gas. Vaporized precursors may be used. The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controllers 136). An output of the manifold 140 is supplied to the process chamber 104. By way of example only, an output of the manifold 140 is supplied to a showerhead 109.

[0077] The substrate processing system 100 further includes a heating system 141 having a temperature controller 142 that may be connected to the heating element 110. The temperature controller 142 controls a power supply 144 that provides power to the heating element 110. Although the temperature controller 142 is shown separate from the system controller 160, it may be implemented as part of the system controller 160. The ESC 101 may include multiple temperature controlled zones, each having a temperature sensor and a heating element. The temperature controller 142 may monitor the temperature indicated by the temperature sensor and adjust the current, voltage, and / or power to the heating element to adjust the temperature to a target temperature. The power supply 144 may provide power, including a high voltage, to the clamping electrode 131 to electrostatically clamp the substrate 107 to the ESC 101. The clamping electrode receives the power to electrostatically clamp the substrate 107 to the ESC 101. The power supply 144 may be controlled by the system controller 160.

[0078] The substrate processing system 100 further includes a cooling system 150 having a backside vacuum controller 152. The backside vacuum controller 152 may receive gas from the manifold 140 and supply the gas to the channels 115 and / or pump 158. This enhances thermal energy transfer between the substrate support 101 and the substrate 107. A backside gas may be provided to enhance substrate peripheral purging and vacuum tracking of the substrate position. The channels 115 may be fed by one or more inlets. In one embodiment, multiple inlets are provided for enhanced cooling. By way of example, the backside gas may include helium.

[0079] The temperature controller 142 may control the temperature of the heating element by controlling its operation, and therefore the temperature of the substrate (e.g., substrate 107). The temperature controller 142 controls the current supplied to the heating element based on sensed parameters from a temperature sensor 143 in the process chamber 104. The backside vacuum controller 152 controls the flow of backside gas (e.g., helium) to the gas passage 115 for cooling the substrate 107 by controlling the flow from one or more gas sources 132 to the gas passage 115. The backside vacuum controller 152 controls the pressure and flow rate of the gas supplied to the passage 115 based on sensed parameters from the temperature sensor 143. In one embodiment, the temperature controller 142 and the backside vacuum controller 152 are implemented as an integrated single controller.

[0080] The temperature sensor 143 may include a resistive temperature device, a thermocouple, a digital temperature sensor, and / or other suitable temperature sensor. During the deposition process, the substrate 107 may be heated in the presence of a high-power plasma. The flow of gas through the passage 115 may reduce the temperature of the substrate 107.

[0081] Valves 156 and pumps 158 may be used to evacuate reactants from the process chamber 104. A system controller 160 may control the components of the substrate processing system 100, including controlling the supplied RF power levels, pressure and flow rates of supplied gases, RF matching, etc. The system controller 160 controls the states of the valves 156 and pumps 158. A robot 164 may be used to supply and remove substrates to and from the ESC 101. For example, the robot 164 may transfer substrates between the ESC 101 and a load lock 166. The robot 164 may be controlled by the system controller 160. The system controller 160 may control the operation of the load lock 166.

[0082] The valves, gas pumps, power sources, RF generators, etc. described herein may be referred to as actuators. The heating elements, gas flow paths, etc. described herein may be referred to as temperature adjustment elements.

[0083] In the example shown, Esc 101 is, Monolithic It is a multi-layered and / or layered structure having an anisotropic body 102 . Monolithic The anisotropic body 102 is a solid that can be operated at high temperatures. Monolithic It is a structural body and does not need to be cooled to a temperature below ambient temperature. MonolithicThe anisotropic body 102 comprises five material layers as shown, with two intermediate material layers 170 disposed between three material layers 172. The five layers 170 and 172 are arranged in a stack. A first (radially outer) portion 174 of the layer 170 may be integrally molded with the layer 172. In one embodiment, a second (inner disk-shaped) portion 176 of the layer 170 is formed of a different material than the layer 172, while the first portion 174 is formed of the same material as the layer 172. The first portion 174 may be ring-shaped and surround the second portion 176. The portion 176 may be used to (i) separate the heating element 110 from the electrodes 116 and 131 in the region below the substrate 107, (ii) provide improved thermal energy diffusion, and (iii) dissipate power and / or prevent shorting of power from the electrodes 116 and 131 to the heating element 110. This provides more uniform heating across the substrate 107, prevents power dissipation, and allows for the use of a smaller power supply.

[0084] By way of example, layer 172, first portion 174, and second portion 176 may be formed of one or more ceramic compositions, such as aluminum nitride (AlN3), aluminum oxide (Al2O3), and / or aluminum oxynitride (AlON). Layer 172, first portion 174, and second portion 176 may have different compositions and / or may be formed of different materials. Second portion 176 may have better or worse thermal energy diffusion properties than layer 172 and portion 174 within a given total thickness of the corresponding substrate support.

[0085] By way of example, to increase the thermal conductivity of second portion 176 relative to layer 172 and first portion 174, second portion 176 may include calcium oxide (CaO), yttrium oxide (YO), cerium oxide (CeO), yttrium fluoride (YF), and / or combinations thereof. Thermal conductivity may be increased by reducing the oxygen content during sintering of, for example, AlN. The oxygen content may be reduced using a nitrogen reducing atmosphere containing (i) YO, and (ii) carbon. As another example, when layers 170 and 172 are formed of AlN3, second portion 176 may be partially oxidized and / or one or more materials (e.g., aluminum oxide (Al2O3), silicon carbide (SiC), silicon mononitride (SiN), and / or aluminum carbide (Al4C3)) may be decomposed in second portion 176 to reduce the thermal conductivity of second portion 176 relative to layer 172 and first portion 174.

[0086] Layer 172 and portions 174 and 176 may be formed to include additives with different properties to affect the thermal and / or electrical conductivity of the corresponding layer and / or portion. Layer 172 and portions 174 and 176 may be formed of AlN3, and portion 176 may have a different additive than layer 170 and portion 174. Forming layer 172 and portions 174 and 176 from similar materials ensures that layers 170 and 172 respond similarly to changes in temperature and power supplied to heating element 110. As a result, there is a reduced likelihood of cracking of the substrate support due to changes in temperature and power supplied to heating element 110. Layer 172 and portions 174 and 176 may be formed to include (i) a glass additive for transient liquid phase sintering, (ii) magnesium oxide (MgO), and / or (iii) other additives.

[0087] In one embodiment, portion 176 is formed before the materials to form layer 172 and portion 174 are incorporated. The materials used to form portion 176 are sintered to form a disc-shaped plate and then other materials are incorporated together to form layer 172 and portion 174 as a preform. The preform is then sintered to form the final solid object.

[0088] In the illustrated example, the electrodes 116 and 131 are disposed on the top layer of the layer 172. The heating element 110 is disposed on the second (or middle) layer of the layer 172. In one embodiment, the heating element 110 is circular and / or disk-shaped. The heating element 110 may include a top electrode 175 and a bottom electrode 177 that are connected to each other along their periphery. In one embodiment, the top electrode 175 and the bottom electrode 177 are circular, disk-shaped, and / or perforated. Although one heating element 110 is shown, any number of heating elements may be included in the ESC 101. The heating elements may have different sizes and shapes to provide corresponding heating patterns and be distributed to each heating zone of the ESC 101. One layer of the layer 170 is disposed between the electrodes 116 and 131 and the heating element 110. Another layer of the layer 170 is disposed below the heating element 110.

[0089] Layers 172 and 174 may be formed of a material with high thermal energy conductivity. In one embodiment, portion 176 has a lower thermal energy conductivity than layer 172 and portion 174. As yet another example, portion 176 may be formed of a material that has a higher electrical resistivity than the surrounding ceramic material. This is done to prevent short circuits between the electrodes and the heating element, preventing power loss to conserve energy and allow for the use of a smaller power supply.

[0090] In another embodiment, portion 176 is formed of pure AlN3 and acts as a separation layer, having a greater resistivity than the surrounding less pure AlN3 layer. The surrounding AlN3 layer comprises, at least in part, a material different from portion 176. In another embodiment, portion 176 is formed of AION, which has a greater resistivity than the surrounding material of layer 172 and portion 174 formed of AlN3. In the described embodiment, AlN3 has a lower thermal energy conductivity than portion 176 formed of AION. AION has a different thermal expansion coefficient than AlN3.

[0091] Portion 176 may be sintered to a theoretical density ratio to improve adhesion during heat pressing. Sintered portion 176 may be machined to a predetermined geometric shape and then surface treated and / or coated to improve adhesion to surrounding materials (e.g., materials used to form layer 172 and portion 174). A preform may be formed to include (i) machined portion 176, (ii) other internal structures (e.g., RF electrodes, clamping electrodes, heating elements, etc.), and (iii) materials (e.g., powders) for forming layer 172 and portion 174. The machined portion and internal structures may be embedded in a powder compact (materials used to form layer 172 and portion 174). The powder compact may have a higher thermal energy conductivity than portion 176.

[0092] In one embodiment, the thermal energy conductivity of layer 172 is the same from the center to the periphery. For the same embodiment, the thermal energy conductivity of portion 176 is the same from the center to the periphery. However, the thermal energy conductivity of layer 172 is different from the thermal energy conductivity of portion 176.

[0093] As mentioned above, the preform formed to ultimately form the substrate support may be formed in multiple layers. This may be achieved by providing a green sheet structure that is hot pressed so that the powder and any internal plates and / or other structural elements bond as the structure sinters to or near the theoretical density value of the corresponding ceramic material. The theoretical density is a parameter that indicates and / or is used to evaluate the porosity of the ceramic material after sintering. When forming the green sheet structure, the powder may be close packed or loosely packed. Portions of the green sheet structure may be consolidated (e.g., pre-sintered, bonded, joined, and / or integrated to form a single solid structure) prior to final consolidation of the entire green sheet structure.

[0094] Sintering may be performed any number of times to ensure proper placement of the internal components. Ceramic plates, wiring, electrodes, and / or other structural and circuit components may be added, for example with the ceramic powder, during each sintering step performed. Sintering some layers and / or structural elements before forming the substrate support preform allows for more dense packing of the hot press die. This allows for more accurate placement of the circuit components and minimizes movement during the final sintering step. An example of such a method is described below in connection with FIG. 11.

[0095] In one embodiment, an upper portion of portion 176 has a lower electrical conductivity and a lower portion of portion 176 has a higher electrical conductivity.

[0096] Although each of the ESCs in FIGS. 1-9 is shown having certain features and not others, each ESC may be modified to include any of the features disclosed herein and in FIGS. 1-9.

[0097] FIG. 2 illustrates a multi-layered and / or layered structure, including layer 202, which may be similar to layer 172 of FIG. Monolithic An anisotropic substrate support 200 is shown. MonolithicThe anisotropic substrate support 200 further comprises a layer 204 having an inner portion 205, which may be similar to the layer 170 of FIG. 202 , and / or is formed of and / or includes a material different from the portion of layer 204 that surrounds portion 205. Monolithic The anisotropic substrate support 200 may comprise electrodes 116 and 131 and heating element 110, and / or other electrodes and heating elements. Monolithic The anisotropic substrate support 200 further comprises metal layers 210 and 212. The metal layers 210 and 212 in effect provide a Faraday cage to prevent backside discharge between the electrodes 116 and 131 and the substrate 214. The metal layer 210 may electrically shield the top surface of the substrate support 200 from the heating element 110. The metal layer 212 may electrically shield the bottom surface of the substrate support 200 from the heating element 110.

[0098] The metal layers 210 and 212 are shown in a particular location relative to the other layers 202 and 204 and the heating element 110, but may be in other locations. The metal layers 210 and 212 may be merged to help spread heat. The metal layers 210 and 212 may have a relatively uniform temperature while spreading thermal energy. In one embodiment, the layers 210 and 212 are formed of a material having high thermal conductivity. The layers 210 and 212 help prevent hot spots on the substrate support 200 and the substrate 214 disposed thereon.

[0099] In one embodiment, the metal layers 210 and 212 are implemented as disk-shaped metal screens or metal meshes. The metal layers 210 and 212 may be formed using metal screen printing and / or may include stacking of multiple metal layers resulting in a composite structure. The metal layers 210 and 212 may be implemented as perforated plates. In the illustrated example, the metal layer 210 is disposed between the heating element 110 and the top layer of the layer 204. The metal layer 212 is disposed between the heating element and the bottom layer of the layer 204. The portions of the substrate support 200 surrounding the layers 210 and 212 may be formed of the same or similar material as the layer 202 and / or the portions of the substrate support 200 surrounding the layer 204. The bottom layer of the layer 204 and the metal layer 212 may include openings for the passage of conductors 220 that provide and receive power to and from the heating element 110.

[0100] FIG. 3 illustrates a multi-layered and / or layered structure, including layer 302, which may be similar to layer 172 of FIG. Monolithic An anisotropic substrate support 300 is shown. Monolithic The anisotropic substrate support 300 further comprises a layer 304, which may be similar to layer 170 of Figure 1. An inner portion 305 of layer 304 is formed of and / or includes a different material than layer 302 and / or the portion of layer 304 surrounding portion 305. Monolithic The anisotropic substrate support 300 may comprise electrodes 116 and 131 and heating element 110, and / or other electrodes and heating elements. In the illustrated example, inner portions 305 of layer 304 are coated with additives and / or modified by chemical surface treatments that locally change the thermal conductivity of the surrounding (or coating) material. Portions 305 have an outer coating layer 310. Portions 305 may be disposed within outer coating layer 310. Outer coating layers 310 each encase portions 305.

[0101] In one embodiment, the portion 305 is implemented as a plate formed of a material with high thermal energy conductivity. The plate may be formed of a ceramic material. In another embodiment, the plate has solids selected to react with or dissolve into the surrounding ceramic material during sintering. The coating layer 310 is formed of a material selected to increase or decrease the concentration of atoms in solid solution in the ceramic, thereby modifying the local thermal conductivity of the plate to provide a layered structure. In one embodiment, the coating on the portion 305 reacts with the surrounding ceramic during sintering to form a reaction layer with unique properties. This triples the number of layers per plate. The bottom of the portion 305 and the corresponding outer coating layer 310 may include openings for the passage of conductors 320 that provide and receive electrical current to and from the heating element 110.

[0102] In addition to and / or in place of portions 205 and 305 of FIGS. 2-3, sheets of solid material may be used to constrain the relative positions of substrate support components (e.g., RF electrodes, clamp electrodes, heating elements, etc.) to improve repeatable placement of the components during manufacture of the corresponding substrate support. The sheets may be configured similarly to portions 205 and 305. In one embodiment, the sheets extend around the periphery of the substrate support, unlike the example portions 205 and 305 of the figures. The substrate supports disclosed herein may have any number of layers and sheets of solid material.

[0103] 2-3, pre-sinter plates 205 and 305 may be positioned adjacent planes of the heater circuit, each plane including portions of one or more heating elements. This adjacent positioning may be provided to reduce the effect of initial concentration variations in the final location of the heating elements after sintering.

[0104] One or more layers of ceramic material having a high electrical resistivity at the operating temperature (e.g., 111 ohmmeter (Ωm) at 650° C.) may be disposed between the clamping electrode 131 and the heating element 110. The operating temperature may be higher than the surrounding ceramic bulk material (e.g., 19 Ωm at 650° C.). By way of example, one or more of the plates 205 and 305 may be formed of a ceramic material having a high electrical resistivity. This prevents electrical loss from the clamping electrode 131 and / or the RF electrode 116 to the heating element 110.

[0105] FIG. 4 shows a layered and / or layered structure providing a constrained morphology. Monolithic An anisotropic substrate support 400 is shown. The substrate support 400 comprises a base 402 shaped to receive the heating element 110. The substrate 402 may be formed of a ceramic material and include grooves and / or other recesses, channels, recessed areas, etc. shaped to mate with and / or retain one or more heating elements. In the illustrated example, the ceramic plate 402 has a hollow interior region 404 shaped to match the shape of the heating element 110. The heating element 110 is disposed in the hollow interior region 404 and is constrained by the base 402. In one embodiment, the base 402 is shaped to receive the heating element 110 in the design form of the heating element. In another embodiment, the heating element is secured to the ceramic base by an adhesive material.

[0106] FIG. 5 illustrates a cross-sectional view of a cross-section of a stencil-coated ... Monolithic5 shows an anisotropic substrate support 500. Any number of fasteners may be provided. The substrate support 500 is similar to the substrate support 400 of FIG. 4, except that the substrate support 500 includes fasteners 502. The fasteners 502 may be implemented as tabs as shown, or as hooks, blocks, guides, etc., that limit movement of at least a portion of the heating element 110 and / or other heating elements relative to a base 504. The base 504 may be formed of ceramic and has a hollow interior region 506 shaped to match the shape of the heating element 110. The fasteners 502 may have different shapes and sizes. Different types of fasteners may be provided, and the fasteners may inhibit and / or limit movement of at least a respective portion of the heating element 110 relative to the base 504.

[0107] In another embodiment, the heating element 110 is secured to the base 504 by an adhesive. In another embodiment, a sinterable preform of material may be secured to the base 504 prior to placement in the mold, may be used as a fastener, and may be molded to constrain the position of at least a portion of the heating element 110.

[0108] To minimize susceptibility to thermal stress, structural elements (e.g., plates, rings, or beams) may be provided on the substrate support. Examples including rings, beams, and plates are shown in FIGS. 6-8, respectively. The structural elements may be provided to counteract tensile stresses in selected portions of the substrate support (at and near the top surface of the substrate support). The structural elements may be provided to create tension and / or internal tensile stresses. For example, the structural elements may have a greater thermal expansion than the surrounding material, resulting in tension between the structural elements and the surrounding material when the structural elements expand. Also, when the corresponding substrate support cools, the structural elements may contract more than the surrounding material, causing the surrounding material to compress. In one embodiment, the structural elements have the same or similar thermal energy conduction properties as the surrounding material, but a different coefficient of expansion than the surrounding material.

[0109] FIG. 6 illustrates a layered and / or layered structure comprising rings 602 and 603. Monolithic 6 shows an anisotropic substrate support 600. The thickness, inner and outer diameters, and / or material composition of the rings 602 and 603 may be set to provide a suitable amount of local thermal conductivity and / or tensile stress. In the illustrated example, the rings 602 and 603 may extend horizontally and / or parallel to the bottom surface of the substrate support 600. The first ring 602 is disposed between the bottom of the base 604 of the substrate support 600 and the heating element 110. The second ring 603 is disposed between the heating element 110 and the RF electrode 116. In one embodiment, the rings 602 and 603 are formed of a ceramic material having a thermal expansion coefficient greater than that of the base 604. The base 604 may be formed of a ceramic material having a different composition than the ceramic material of the rings 602 and 603. Rings 602 and 603 may be configured to apply an internal tensile stress, which may be caused, for example, by thermal contraction of rings 602 and 603 radially inward. This contraction is represented by arrows 606.

[0110] FIG. 7 illustrates a multi-layered and / or layered structure with beams 702. Monolithic 7 shows an anisotropic substrate support 700. Any number of beams may be provided. The length, width, horizontal cross-sectional area and shape, and / or material composition of the beams 702 may be configured to provide a suitable amount of local thermal conductivity and / or tensile stress. The beams 702 may extend perpendicularly and / or parallel to one another. In one embodiment, the beams 702 are positioned equidistant from one another and / or from a vertical centerline 704 of the substrate support 700. The beams 702 may be positioned symmetrically with respect to one or more planes that extend vertically through the centerline 704.

[0111] One or more structural members may be added where each structural element has a larger coefficient of thermal expansion (CTE) than the bulk ceramic material of the corresponding substrate support. The structural elements may comprise plates, rings, beams, etc., as shown in the figures provided. Tensile stress may be induced by the difference in (i) the manufacturing temperature at which the structural member assumes the corresponding final shape, and (ii) the use temperature of the bulk ceramic material.

[0112] In one embodiment, the resulting structure formed with structural members after sintering is heat treated at a temperature where the structural members (e.g., structural members having high CTE values) deform at a faster rate than the surrounding material, which may be referred to as creep deformation, which relieves a controlled amount of stress.

[0113] In another embodiment, different portions of the substrate support may be made to experience different creep rates, which may be done by heat treating, doping, and / or performing some other treatment on selected portions of the substrate support to control the final overall stress profile of the substrate support.

[0114] In yet another embodiment, the structural elements may be formed of a ceramic material, coated with additives, or modified by chemical surface treatments that locally alter the CTE of the surrounding material of the corresponding substrate support. In another embodiment, solids having selected sizes and shapes are added to the bulk ceramic material at one or more preselected locations and locally react with and / or dissolve into the bulk ceramic material during sintering. This alters the local CTE at each location and forms structural members in the bulk ceramic material (or bulk ceramic body) of the substrate support.

[0115] In one embodiment, a ceramic plate to be included in the substrate support preform is formed and sintered without applied pressure, and then other materials are added to form the preform. This may be done to reduce the height of the preform for a given final volume, allowing more preforms to fit into the interior volume of the mold.

[0116] To form such a preform, a ceramic body with an initial stress that is resistant to cracking may be formed and combined with other materials and internal components. This allows the materials of the structural elements of the substrate support to be consolidated (e.g., sintered, welded, bonded, and / or made into a single solid body) before forming a substrate support preform with the consolidated structural elements. This may be done to provide greater control over placement of the substrate support's internal structures during sintering and to increase the throughput of the system used to manufacture the substrate support. This differs from conventional hot pressed ceramic substrate supports, which are formed by sintering all of the ceramic powders used to form the corresponding structures at the same time.

[0117] FIG. 8 illustrates a laminated and / or layered structure comprising a plate 802 and a ceramic substrate 804 having different thermal expansion coefficients. Monolithic 8 shows an anisotropic substrate support 800. The substrate support 800 may comprise metal layers, screens, rings, beams, coating layers, voids, and / or other objects having different material compositions with unique properties (such as unique thermal expansion coefficients, electrical conductivity, and / or electrical resistivity) as described in connection with FIGS. 2-7 and 9. The example of FIG. 8 includes a plate 802, but may comprise any of the other described items. The thickness, diameter, and / or material composition of the plate 802 may be configured to provide a suitable amount of thermal conductivity, electrical conductivity, electrical resistivity, and / or local tensile stress.

[0118] FIG. 9 illustrates a multi-layered and / or layered structure that may include internal voids and / or flow paths in certain layers (example void 902 is shown). Monolithic9 shows an anisotropic substrate support 900. The internal voids and channels are arranged to vary the thermal conductivity. The void 902 may be at a different remote location within the substrate support 900. The channels may be referred to as voids. As some examples, the channels may be ring-shaped and / or spiral-shaped. The voids and channels may be empty spaces of any gas, liquid, and / or material. In one embodiment, one or more of the voids and channels are filled with a low-pressure insulating gas (such as sulfur hexafluoride (SF6), argon (Ar), krypton (Kr)) for conductivity reduction. In another embodiment, either or both of the voids and channels are filled with a conductive fluid. The conductive fluid may include high-pressure helium (He) or a metal (such as gallium (Ga), indium (In), and / or tin (Sn)). The conductive fluid may be included to enhance heat transfer (such as forced convection, natural convection, etc.). The size, shape, thickness, diameter, and / or internal material of the voids and channels may be designed to provide a suitable amount of thermal conductivity, electrical conductivity, electrical resistivity, and / or localized tensile stress.

[0119] 10 illustrates a substrate support manufacturing system 1000 including a computer 1002, a press controller 1004 that controls one or more presses (one press 1006 is shown), a processing controller 1008 that controls one or more processing tools (one processing tool 1010 is shown), and a sensor 1012. The computer 1002 may include a fabrication controller 1014, a memory 1016, and an interface 1018.

[0120] The fabrication controller 1014 may include a temperature controller 1020, a pressure controller 1022, a placement controller 1024, a die and press controller 1026, and / or other controllers 1028. Some operations of the controllers 1014, 1020, 1022, 1024, 1026, and 1028 are described below in connection with the method of FIG.

[0121] The memory 1016 may store, for example, parameters 1030, temperature data 1032, pressure data 1034, position data 1036, and / or other data 1038. The parameters 1030 and the data 1032, 1034, 1036, and 1038 may correspond to a model of the substrate support and / or may be stored as part of a table and include historical, predetermined, estimated, simulated, and / or measured values. The parameters 1030 may include parameters detected by the sensors 1012 and may include estimated, measured, and / or determined parameters used during the method of FIG. 11. The sensors 1012 may be located on the press 1006, the processing tool 1010, and / or elsewhere. The sensors 1012 may include temperature sensors, pressure sensors, position sensors, etc.

[0122] The temperature data 1032 may include, for example, the temperature of a die 1040 mounted on the press 1006. The pressure data may include the pressure applied to the die 1040. Although one press and one die are shown, the press controller may be connected to and / or control multiple presses and dies. The dies may comprise initial preforms, intermediate preforms, final preforms, and / or resulting substrate supports. The illustrated preforms are further described below in connection with FIG. 11.

[0123] The processing tool 1010 may include a computer numerically controlled (CNC) milling machine, a knurling machine, a molding machine, a casting machine, a three-dimensional (3D) printer, and / or other machines and / or devices suitable for producing and / or modifying the object and / or internal structure included in the preform. The processing controller 1008 may receive control signals, parameters, and / or data from the controllers 1014, 1020, 1022, 1024, 1026, and 1028 through an interface 1018. The controllers 1014, 1020, 1022, 1024, 1026, and 1028 control the operation of the press controller 1004 and the processing controller 1008 to produce the substrate support.

[0124] The substrate support disclosed herein may be formed using a number of methods, with an exemplary method being shown in Figure 11, which may include some of the manufacturing embodiments described above. Figure 11 illustrates a method for forming a substrate support. The following operations are described primarily with respect to the embodiment of Figures 1-10, but may be easily modified to apply to other embodiments of the present disclosure. These operations may be performed iteratively.

[0125] The method may begin at 1100. At 1102, materials (e.g., ceramic powder and / or other materials) and one or more objects (e.g., heating elements, electrodes, wires, plates, rings, beams, and / or other objects disclosed herein) are collectively placed into a press die to form an initial preform.

[0126] At 1104, pressure may be applied to the initial preform. This may be referred to as a first operation or a pre-consolidation operation. Operation 1104 may be performed prior to and / or during operation 1106. At 1106, the initial preform is sintered at a predetermined temperature. At 1107, a portion of the initial internal structure may be machined to remove material from the initial internal structure and / or to shape the initial internal structure.

[0127] At 1108, it is determined whether another internal structure is to be formed. Each iteration of the combination of operations 1102, 1104, and 1106 may include a different die and / or press.

[0128] At 1110, materials (e.g., ceramic powder and / or other materials), one or more initial internal structures, one or more intermediate internal structures, and / or one or more objects (e.g., heating elements, electrodes, wires, plates, rings, beams, and / or other objects disclosed herein) are collectively placed in a press die to form an intermediate preform. The initial internal structures may be formed during repetitions of operations 1102, 1104, 1106, and / or by other operations. The intermediate internal structures may be formed during repetitions of operations 1110, 1112, 1114, and / or by other operations.

[0129] At 1112, pressure may be applied to the intermediate preform. This may be referred to as another pre-consolidation operation. Operation 1112 may be performed prior to and / or during operation 1114. At 1114, the intermediate preform is sintered at a predetermined temperature. At 1115, a portion of the intermediate internal structure may be processed to remove material from the intermediate internal structure and / or to shape the initial internal structure.

[0130] At 1116, it is determined whether another internal structure is to be formed. Each iteration of the combination of operations 1110, 1112, and 1114 may include a different die and / or press.

[0131] At 1118, materials (e.g., ceramic powders and / or other materials), one or more initial internal structures, one or more intermediate internal structures, and / or one or more objects (e.g., heating elements, electrodes, wires, plates, rings, beams, and / or other objects disclosed herein) are collectively placed in a press die to form a final preform. The initial internal structures may be formed during repetitions of operations 1102, 1104, 1106, and / or by other operations. The intermediate internal structures may be formed during repetitions of operations 1110, 1112, 1114, and / or by other operations. At 1120, pressure may be applied to the final preform. This may be referred to as a final consolidation operation. Operation 1120 may be performed prior to and / or during operation 1122. At 1122, the final preform is sintered at a predetermined temperature. The method may end at 1124.

[0132] One or more of the above operations may include performing heat treatments, doping, and / or some other treatment on selected portions of one or more of the initial and intermediate internal structures to control the final overall stress profile of the substrate support.

[0133] During the above operations, the structure is preformed by performing a pre-compaction operation followed by a final consolidation operation. The density (mass per unit area), porosity per unit area, and / or number of cracks per unit area of ​​each preformed structure is different from the rest of the final product. The expression "per unit area" refers to a preselected area or volume when the substrate support or a portion thereof is divided into equal sized units. For density, "per unit area" may refer to volume. For porosity and number of cracks, "per unit area" may refer to a two-dimensional area or volume. As an example, the first intermediate layer and the second intermediate layer may comprise respective solid structures that are pre-compacted. The first intermediate layer and the second intermediate layer may be disposed between other layers of the final product. The other layers and / or other parts of the intermediate layer after final consolidation have a different density, porosity, and / or number of cracks than the preformed structure. The preformed structure may have a higher density, lower porosity, and fewer cracks than the other layers and / or other parts of the final product. As an example, the density of the preformed structure may be 1% or more higher than the density of other layers and / or other portions of the final product. As another example, the density of the preformed structure may be 20% or more higher than the density of other layers and / or other portions of the final product.

[0134] The above operations are meant to be examples. These operations may be performed sequentially, synchronously, simultaneously, consecutively, during overlapping time periods, or in a different order depending on the application. Also, any of the operations may not be performed or may be omitted depending on the embodiment and / or sequence of events.

[0135] The above examples allow for a larger amount of ceramic material to be placed in the mold prior to sintering and / or reduce the thickness of the bulk ceramic body required to meet a given thermal uniformity specification. The substrate support structure is positioned to improve heat spreading and place the wafer closer to the heating element. This is done without sacrificing thermal uniformity, allowing thinner ceramic bodies to achieve the same or improved performance with less raw material and reduced mold space, resulting in heat pressing capabilities.

[0136] The foregoing is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the disclosure may be embodied in various forms. Thus, while the disclosure includes certain examples, other variations will become apparent upon review of the drawings, specification, and claims below, and the true scope of the disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of those features described in connection with an embodiment of the disclosure may be implemented in other embodiments and / or may be implemented in combination with features of other embodiments (even if the combination is not specified). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0137] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless specified as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but at the same time, it may be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning a logic using a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0138] In some embodiments, the controller is part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment with processing tools, chambers, processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control pre-, during, and post-processing operations of the semiconductor wafer or substrate. These electronics may be referred to as a "controller" that may control various components or sub-components of the system. The controller may be programmed to control any process disclosed herein, including supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position operation settings, wafer loading and unloading from the tool and other transport tools and / or load locks connected or coupled to the specific system, depending on the processing requirements and / or type of system.

[0139] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0140] In some embodiments, the controller may be part of or coupled to a computer integrated or coupled with the system, or otherwise networked or combined with the system. For example, the controller may be in the "cloud" that allows remote access of wafer processing, or may be all or part of a fab host computer system. The computer may allow remote access to the system to monitor the progress of a manufacturing operation, to study the history of past manufacturing operations, to study trends or performance metrics from multiple manufacturing operations, and to modify parameters of a current process, or to set up a processing step following a current process, or to start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to connect to or control. Thus, as discussed above, the controller may be distributed, for example, by including one or more separate controllers networked together and cooperating toward a common purpose, such as a process or control as described herein. An example of a controller distributed for such purposes would be one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and that cooperate to control a process in the chamber.

[0141] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0142] As described above, depending on the process steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory. The present invention can be realized, for example, in the following manner. Application example 1: A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or a second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical conductivity of the first material and / or the second material; an anisotropic body having a monolithic structure, wherein the first intermediate layer is disposed between the first layer and the second layer, or the second layer is disposed between the first layer and the first intermediate layer; A substrate support comprising: Application example 2: The substrate support according to Application Example 1, The first intermediate layer is formed of a material different from the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and A substrate support, wherein the electrical energy conductivity of the first intermediate layer differs from the electrical conductivity of the first material and / or the second material. Application example 3: The substrate support according to Application Example 1, The first intermediate layer is formed of a material different from the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material; and the electrical energy conductivity of the first intermediate layer differs from the electrical conductivity of the first material and the electrical conductivity of the second material. Application example 4: The substrate support according to Application Example 1, A substrate support, wherein the first intermediate layer has a coefficient of thermal expansion different from a coefficient of thermal expansion of at least one of the first material and the second material. Application example 5: The substrate support according to Application Example 1, the first intermediate layer having an inner portion and an outer portion; the inner portion is formed of a material different from the first layer and the second layer; The substrate support, wherein the outer portion is formed of the first material or the second material. Application example 6: The substrate support according to Application Example 1, further comprising: A substrate support comprising a metal layer disposed between the first intermediate layer and the second layer. Example 7: The substrate support according to Application Example 6, The substrate support, wherein the metal layer is implemented as a metal screen or metal mesh. Application example 8: The substrate support according to Application Example 1, The second layer is formed of the first material. Example 9: The substrate support according to Application Example 1, The first intermediate layer is an inner portion covered with a coating layer; an outer portion surrounding the inner portion; A substrate support comprising: Example 10: The substrate support according to Application Example 1, A substrate support, wherein the first intermediate layer includes a solid structure having at least one of density, porosity per unit area, and number of cracks per unit area different from the first layer, the second layer, and the first intermediate layer of the anisotropic body having the integral structure. Example 11: The substrate support according to Application Example 1, further comprising: a second intermediate layer disposed below the second layer and formed of a material different from the first and second layers, such that The thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and a second intermediate layer having an electrical energy conductivity different from the electrical conductivity of the first material and / or the second material. Application example 12: The substrate support according to application example 11, the second intermediate layer having an inner portion and an outer portion; the inner portion is formed of a material different from the first layer and the second layer; The substrate support, wherein the outer portion is formed of the first material or the second material. Application example 13: The substrate support according to Application Example 11, further comprising: a first metal layer disposed between the first intermediate layer and the second layer; a second metal layer disposed between the second layer and the second intermediate layer; A substrate support comprising: Example 14: The substrate support according to application example 11, The first intermediate layer is a first inner portion covered with a first covering layer; a first outer portion surrounding the first inner portion; The second intermediate layer is a second inner portion covered with a second coating layer; a second outer portion surrounding the second inner portion. Application example 15: The substrate support according to application example 11, the first intermediate layer comprises a first solid structure and the second intermediate layer comprises a second solid structure; A substrate support, wherein the first solid structure and the second solid structure have at least one of density, porosity per unit area, and number of cracks per unit area that are different from the first layer, the second layer, the remaining portion of the first intermediate layer, and the remaining portion of the second intermediate layer of the anisotropic body having the integral structure. Application example 16: The substrate support according to Application Example 1, The monolithic anisotropic body is shaped similarly to the heating element and includes a hollow interior region that constrains the heating element. Example 17: The substrate support according to Application Example 1, The monolithic anisotropic body includes a fastener for limiting movement of the heating element relative to the monolithic anisotropic body. Example 18: The substrate support according to Application Example 1, The substrate support, wherein the first intermediate layer comprises at least one of a ring and a void. Example 19: The substrate support according to Application Example 1, The first intermediate layer comprises a void filled with an insulating gas or a conductive fluid. Example 20: The substrate support according to Application Example 1, The monolithic anisotropic body has vertically extending beams, The beam is formed of a different material than the first layer and the second layer. Example 21: 1. A method of forming a substrate support, comprising: placing a first material and a first object in a first mold to form an initial preform; sintering the initial preform to provide a first initial internal structure; placing the first initial internal structure, a second material, and a second object in a second mold to form a final preform; and sintering the final preform to provide the substrate support. The method, wherein the first object and the second object include a heating element, a clamp electrode, and a radio frequency electrode. Example 22: The method according to Application Example 21, further comprising: The method includes applying pressure to the initial preform before and / or during sintering of the initial preform. Example 23: The method according to Application Example 21, further comprising: The method comprises applying no pressure to the initial preform prior to and / or during sintering of the initial preform. Application 24: The method according to Application Example 21, further comprising: The method comprising the step of applying pressure to the final preform prior to and / or during sintering of the final preform. Example 25: The method according to Application Example 21, further comprising: The method comprising the step of applying no pressure to the final preform prior to and / or during sintering of the final preform. Example 26: The method according to Application Example 21, further comprising: forming a plurality of internal structures including the initial internal structure; The method, wherein forming the final preform comprises placing the plurality of internal structures in the second mold. Example 27: The method according to Application Example 21, further comprising: arranging the first initial internal structure and at least one of a third material and a third object in a third mold to form an intermediate preform; and sintering the intermediate preform to form an intermediate internal structure. The method of claim 1, wherein forming the final preform comprises placing the intermediate internal structure in the second mold. Example 28: The method according to Application Example 21, further comprising: forming the final preform and machining the initial internal structure prior to placing the initial internal structure in the second mold. Example 29: The method according to Application Example 21, The method, wherein the substrate support comprises a greensheet structure. Example 30: The method according to Application Example 21, The method, wherein forming the initial preform comprises forming a stack of multiple layers.

Claims

1. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with A substrate support, wherein at least one of a material of the first intermediate layer and a material of the second layer has at least one of a different density and a different porosity than the first material of the first layer.

2. 2. The substrate support of claim 1, The first intermediate layer is formed of a material different from the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and A substrate support, wherein the electrical energy conductivity of the first intermediate layer differs from the electrical energy conductivity of the first material and / or the second material.

3. 2. The substrate support of claim 1, The first intermediate layer is formed of a material different from the first layer and the second layer, such that the thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and the second material; and the electrical energy conductivity of the first intermediate layer differs from the electrical energy conductivity of the first material and the electrical energy conductivity of the second material.

4. 2. The substrate support of claim 1, A substrate support, wherein the first intermediate layer has a coefficient of thermal expansion different from a coefficient of thermal expansion of the first material and / or the second material.

5. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with the first intermediate layer having an inner portion and an outer portion; the inner portion is formed of a material different from the first layer and the second layer; The substrate support, wherein the outer portion is formed of the first material or the second material.

6. 2. The substrate support of claim 1, further comprising: A substrate support comprising a metal layer disposed between the first intermediate layer and the second layer.

7. 7. A substrate support according to claim 6, The substrate support, wherein the metal layer is implemented as a metal screen or metal mesh.

8. 2. The substrate support of claim 1, The second layer is formed of the first material.

9. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with The first intermediate layer comprises: an inner portion covered with a coating layer; an outer portion surrounding the inner portion; A substrate support comprising:

10. 2. The substrate support of claim 1, A substrate support, wherein the first intermediate layer comprises a solid structure having at least one of a density, a porosity per unit area, and a number of cracks per unit area that are different from the first layer, the second layer, and the first intermediate layer of the anisotropic body.

11. 2. The substrate support of claim 1, further comprising: a second intermediate layer disposed below the second layer and formed of a material different from the first and second layers, such that the thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and a second intermediate layer, the electrical energy conductivity of which is different from the electrical energy conductivity of the first material and / or the second material; Substrate support.

12. 12. The substrate support of claim 11, the second intermediate layer having an inner portion and an outer portion; the inner portion is formed of a material different from the first layer and the second layer; The substrate support, wherein the outer portion is formed of the first material or the second material.

13. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; a second intermediate layer disposed below the second layer and formed of a material different from the first and second layers, such that the thermal energy conductivity of the second intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and a second intermediate layer, the electrical energy conductivity of which is different from the electrical energy conductivity of the first material and / or the second material; a first metal layer disposed between the first intermediate layer and the second layer; a second metal layer disposed between the second layer and the second intermediate layer; A substrate support comprising:

14. 12. The substrate support of claim 11, The first intermediate layer comprises: a first inner portion covered with a first coating layer; a first outer portion surrounding the first inner portion; The second intermediate layer is a second inner portion covered with a second coating layer; a second outer portion surrounding the second inner portion.

15. 12. The substrate support of claim 11, the first intermediate layer comprises a first solid structure, and the second intermediate layer comprises a second solid structure; A substrate support, wherein the first solid structure and the second solid structure have at least one of a density, a porosity per unit area, and a number of cracks per unit area that are different from the first layer, the second layer, a remainder of the first intermediate layer, and a remainder of the second intermediate layer of the anisotropic body.

16. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with The anisotropic body is shaped similarly to the heating element and includes a hollow interior region that constrains the heating element.

17. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with The anisotropic body includes a fastener for limiting movement of the heating element relative to the anisotropic body.

18. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with The first intermediate layer comprises at least one of a ring and a void.

19. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with The first intermediate layer comprises a void filled with an insulating gas or a conductive fluid.

20. A substrate support comprising: A high frequency electrode; A clamp electrode; A heating element; An anisotropic body having a monolithic structure, a first layer formed of a first material and having the radio frequency electrode and the clamp electrode disposed therein; a second layer formed of the first material or the second material and having the heating element disposed therein; and a first intermediate layer formed of a material different from the first layer and the second layer, such that The thermal energy conductivity of the first intermediate layer is different from the thermal energy conductivity of the first material and / or the second material; and the electrical energy conductivity of the first intermediate layer is different from the electrical energy conductivity of the first material and / or the second material; an anisotropic body, the first intermediate layer being disposed between the first layer and the second layer, or the second layer being disposed between the first layer and the first intermediate layer; Equipped with The anisotropic body has vertically extending beams, The beam is formed of a different material than the first layer and the second layer.

21. 1. A method of forming a substrate support, comprising: placing a first material and a first object in a first mold to form an initial preform; sintering the initial preform to provide an initial internal structure; placing the initial internal structure, a second material, and a second object in a second mold to form a final preform; and sintering the final preform to provide the substrate support. The method, wherein the first object and the second object include a heating element, a clamp electrode, and a radio frequency electrode.

22. 22. The method of claim 21 further comprising: The method includes applying pressure to the initial preform before and / or during sintering of the initial preform.

23. 22. The method of claim 21 further comprising: The method comprises applying no pressure to the initial preform prior to and / or during sintering of the initial preform.

24. 22. The method of claim 21 further comprising: The method comprising the step of applying pressure to the final preform prior to and / or during sintering of the final preform.

25. 22. The method of claim 21 further comprising: The method comprising the step of applying no pressure to the final preform prior to and / or during sintering of the final preform.

26. 22. The method of claim 21 further comprising: forming a plurality of internal structures including the initial internal structure; The method of claim 1, wherein forming the final preform comprises placing the plurality of internal structures in the second mold.

27. 22. The method of claim 21 further comprising: placing the initial internal structure and at least one of a third material and a third object together in a third mold to form an intermediate preform; and sintering the intermediate preform to form an intermediate internal structure. The method of claim 1, wherein forming the final preform comprises placing the intermediate internal structure in the second mold.

28. 22. The method of claim 21 further comprising: forming said final preform and machining said initial internal structure prior to placing said initial internal structure in said second mold.

29. 22. The method of claim 21, The method, wherein the substrate support comprises a greensheet structure.

30. 22. The method of claim 21, The method, wherein forming the initial preform comprises forming a stack of multiple layers.

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