Laminated structure and method for manufacturing the same, electronic device, electronic equipment, and system

Abstract

To provide a laminate structure having excellent crystallinity, semiconductor devices, and a manufacturing method that can obtain them industrially advantageously.SOLUTION: In the steps of providing a compound element-supplying sacrificial layer containing a compound element on a crystal substrate and forming an insulating layer using the compound element of the compound element-supplying sacrificial layer, a laminated structure is manufactured in which the insulating layer incorporates the compound element in the compound element-supplying sacrificial layer provided on the crystal substrate, and the resulting laminated structure is used to manufacture semiconductor devices.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a multilayer structure, a semiconductor device, and a method for manufacturing the same. [Background technology]

[0002] Conventionally, to prevent IC malfunctions and damage caused by lateral and vertical parasitic elements that occurred in PN isolation, the SOI (Silicon On Insulator) technology, which uses an SiO2 film to isolate each element, has been known. In recent years, methods for forming multiple semiconductor elements with different breakdown voltages on a single semiconductor substrate have also been considered, and in particular, their application to wide-bandgap semiconductors (such as SiC and GaN) is being investigated (Patent Document 1).

[0003] Furthermore, attempts have been made to form devices on flexible substrates such as plastics using SOI technology. For example, as disclosed in Patent Document 2, there is a method in which a completed SOI substrate is used to partially open up the SOI layer, exposing the BOX (Buried Oxide) layer, and then HF etching is performed. The HF penetrates laterally, etching the BOX and forming pillars. After pillar formation, the SOI layer is attached to PET (polyethylene terephthalate) or the like, peeled off from the substrate along the pillars, and the SOI layer is formed on top of the PET or the like, thereby transferring the SOI layer on which the device has been fabricated onto the flexible substrate.

[0004] However, none of the SOI technologies were entirely satisfactory in terms of the crystallinity of the semiconductor film formed on the insulating film, the crystallinity of the insulating film, or the insulating properties. Further improvements in crystallinity and semiconductor properties were eagerly awaited. In addition, the process of peeling and transferring the SOI layer was complicated and difficult, so there was a strong demand for a new SOI technology that would allow for easy peeling and transfer. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2021-5718 [Patent Document 2] Japanese Patent Publication No. 2014-179580 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] The present invention aims to provide a laminated structure having excellent crystallinity, a semiconductor device, and a manufacturing method that can produce these in an industrially advantageous manner. [Means for solving the problem]

[0007] As a result of diligent research to achieve the above objectives, the present inventors have discovered various findings regarding a method for manufacturing a laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystalline substrate. These findings include the step of providing a compound element-supplied sacrificial layer containing compound elements on the crystalline substrate, and the step of forming the insulating layer using the compound elements of the compound element-supplied sacrificial layer, which allows for the easy acquisition of a laminated structure containing an insulating film with excellent crystallinity, and that forming a conductive film or semiconductor film on the insulating film results in excellent crystallinity, excellent electrode characteristics and semiconductor properties, and is useful for peeling and transfer. The inventors have found that such a laminated structure and its manufacturing method can solve the above-mentioned conventional problems all at once. Furthermore, after obtaining the above findings, the inventors conducted further studies and completed the present invention.

[0008] In other words, the present invention relates to the following invention. [1] A method for manufacturing a laminated structure comprising a crystalline substrate on which an insulating layer containing a crystalline compound is laminated, the method comprising the steps of providing a compound element supply sacrificial layer containing a compound element on the crystalline substrate, and forming the insulating layer using the compound element of the compound element supply sacrificial layer. [2] The manufacturing method according to [1], wherein after using the compound element, a compound element gas is introduced to form the insulating layer in the presence of the compound element gas. [3] The manufacturing method according to [1] or [2], wherein the lamination is carried out by vapor deposition or sputtering. [4] The manufacturing method according to any one of [1] to [3], wherein the compound element supply sacrificial layer is an oxide film provided on the crystal substrate. [5] A laminated structure comprising an insulating layer laminated on a crystalline substrate, wherein the insulating layer incorporates compound elements from a compound element supply sacrificial layer containing compound elements provided on the crystalline substrate. [6] The laminated structure according to [5], wherein the crystalline substrate is a crystalline Si substrate. [7] The laminated structure according to [5] or [6], wherein the compound element supply layer comprises a compound film. [8] The laminated structure according to [7], wherein the thickness of the compound film is greater than 1 nm and less than 100 nm. [9] The laminated structure according to any one of [5] to [8], wherein the insulating layer is an epitaxial film containing a crystalline compound.

[10] A laminated structure comprising an insulating layer containing a crystalline compound on a crystalline substrate, and a crystalline conductive film or semiconductor film further laminated on the insulating layer, wherein the insulating layer incorporates compound elements from a compound element supply sacrificial layer containing compound elements provided on the crystalline substrate.

[11] The laminated structure according to [5], comprising an SOI substrate in which a semiconductor film is laminated on the insulating layer.

[12] The laminated structure according to [5], comprising an electrode substrate on which a crystalline conductive film is laminated on the insulating layer.

[13] A semiconductor device comprising a stacked structure, wherein the stacked structure is a stacked structure according to any one of [5] to

[12] above.

[14] The semiconductor device described in [9], including a lateral device.

[15] A method for manufacturing a semiconductor device using a laminated structure, characterized in that the laminated structure is a laminated structure according to any one of [5] to

[12] above.

[16] A system including a semiconductor device, wherein the semiconductor device is the semiconductor device described in

[13] or

[14] .

[17] The laminated structure according to [9], having between the crystalline substrate and the epitaxial film an amorphous thin film containing the constituent metal of the crystalline substrate and / or compound elements of the crystalline compound and / or one or more embedded layers containing the constituent metal and compound elements embedded in a part of the crystalline substrate.

[18] The laminated structure according to

[17] , having an amorphous thin film containing the constituent metal of the epitaxial film and the compound element between the crystal substrate and the epitaxial film, and / or one or more embedded layers containing the constituent metal of the epitaxial film and the compound element embedded in a part of the crystal substrate.

[19] The laminated structure according to

[17] , having between the crystal substrate and the epitaxial film an amorphous thin film containing the constituent metal of the epitaxial film and / or the constituent metal of the crystal substrate and the compound element, and one or more embedded layers embedded in a part of the crystal substrate and containing the constituent metal and the compound element.

[20] The laminated structure according to any one of

[17] to

[19] , wherein the constituent metal includes Hf.

[21] The laminated structure according to any one of

[17] to

[20] , wherein the thickness of the amorphous thin film is 1 nm to 10 nm.

[22] The laminated structure according to any one of

[17] to

[21] , wherein the shape of the embedded layer has a substantially inverted triangular cross-sectional shape.

[23] An electronic device, electronic device or system comprising a laminated structure, wherein the laminated structure is a laminated structure according to any one of

[17] to

[22] above. [Effects of the Invention]

[0009] The laminated structure and the semiconductor device of the present invention have excellent crystallinity, and according to the manufacturing method of the present invention, the laminated structure and the semiconductor device can be obtained industrially advantageously.

Brief Description of the Drawings

[0010] [Figure 1] It is a diagram schematically showing an example of a preferred embodiment of the laminated structure of the present invention. [Figure 2] It is a diagram schematically showing an SOI island formation process in peeling / transfer, which is an example of a preferred application example of the laminated structure of the present invention. [Figure 3] It is a diagram schematically showing an HF etching process in peeling / transfer, which is an example of a preferred application example of the laminated structure of the present invention. [Figure 4] It is a diagram schematically showing an attaching process to a flexible substrate in peeling / transfer, which is an example of a preferred application example of the laminated structure of the present invention. [Figure 5] It is a diagram schematically showing a peeling process in peeling / transfer, which is an example of a preferred application example of the laminated structure of the present invention. [Figure 6] It is a diagram schematically showing an example of an oxide film formation process in a preferred manufacturing method of the laminated structure of the present invention. [Figure 7] It is a diagram schematically showing an example of an insulating film formation process in a preferred manufacturing method of the laminated structure of the present invention. [Figure 8] It shows a cross-sectional STEM image observed in the example. [Figure 9] It shows a STEM image observed in the example. [Figure 10] It shows a STEM image observed in the example. [Figure 11] It is a diagram schematically showing a preferred example of an insulated gate bipolar transistor (IGBT) obtained in the present invention. [Figure 12] It is a diagram schematically showing an example of a preferred manufacturing process of the insulated gate bipolar transistor (IGBT) of FIG. 11. [Figure 13]This diagram schematically shows a suitable example of a power supply system. [Figure 14] This figure schematically shows a preferred example of a system device. [Figure 15] This diagram schematically shows a suitable example of a power supply circuit diagram for a power supply unit. [Figure 16] This figure shows the XPS measurement results in the example. [Figure 17] This figure shows the XPS measurement results in the example. [Figure 18] This figure schematically shows a film deposition apparatus preferably used in the examples. [Figure 19] The cross-sectional STEM images measured in the example are shown. [Figure 20] The STEM images measured in the example are shown. [Figure 21] The STEM image of the embedded layer measured in the example is shown. [Modes for carrying out the invention]

[0011] The present invention relates to a method for manufacturing a laminated structure, comprising laminating an insulating layer containing a crystalline compound on a crystalline substrate, and is characterized by comprising the steps of providing a compound element-supplied sacrificial layer containing compound elements on the crystalline substrate, and forming the insulating layer using the compound elements of the compound element-supplied sacrificial layer. The crystalline compound is not particularly limited and may be a known crystalline compound, but in the present invention, it is preferable that the crystalline compound is a metal compound, and the metal of the metal compound may also be a known metal. Examples of the metal include metals of block D of the periodic table. The metal compound may also be a known compound. Examples of compounds in the crystalline compound include oxides, nitrides, oxynitrides, sulfides, oxysulfides, borides, oxyborides, carbides, oxycarbides, bocarbides, bonitrides, borosulfides, carbonitrides, carbonusulfides, or carbonoborides. However, in the present invention, oxides or nitrides are preferred because they can provide superior stress relaxation and warping reduction in heteroepitaxial growth as a buffer layer, and further improve electrical properties (especially the interface between the conductive layer and the insulating layer). Furthermore, the crystalline compound is preferably a crystalline oxide, the compound film is preferably an oxide film, and the compound element is preferably oxygen. In the present invention, the crystalline compound is preferably a crystalline nitride, the compound film is preferably a nitride film, and the compound element is preferably nitrogen. By the above manufacturing method, a laminated structure in which an insulating layer is laminated on a crystalline substrate, wherein the insulating layer incorporates oxygen atoms from an oxygen-supplying sacrificial layer containing oxygen provided on the crystalline substrate, can be easily obtained, and such a laminated structure is also included in the present invention.

[0012] The oxygen-supplying sacrificial layer may be a sacrificial layer containing oxygen, in which part or all of the layer disappears or is destroyed when oxygen atoms are incorporated. In the present invention, it is preferable that the oxide film is an oxygen-supplying sacrificial layer in which oxygen atoms are incorporated during the crystal growth of the epitaxial layer and the oxide film itself disappears. Furthermore, in the present invention, it is preferable that the oxygen-supplying sacrificial layer is an oxide film provided on the crystal substrate.

[0013] Figure 1 shows a preferred example of the laminated structure, in which a first epitaxial layer 3 is laminated on a crystalline substrate 1 as the insulating film using an oxide film, and a second epitaxial layer 4 is further laminated on the first epitaxial layer 3 as a conductive film or semiconductor film. In this specification, the terms "film" and "layer" may be interchanged depending on the case or situation. Furthermore, although an example of an oxide is given as a preferred example of the laminated structure, the present invention is not limited to these preferred examples, and the present invention can be suitably applied to various compounds such as nitrides.

[0014] The laminated structure of the present invention can be easily manufactured by forming an oxide film 2 on a crystalline substrate 1, as shown in Figure 6, and then using the oxygen in the oxide film 2 to form an insulating film (first epitaxial layer) 3 made of crystalline oxide on the crystalline substrate 1, as shown in Figure 7. In the present invention, the laminated structure may have the oxide film 2 on the crystalline substrate 1, but the oxide film 2 may disappear when all the oxygen in the oxide film 2 is incorporated during the formation of the insulating film 3. The following describes each of these in more detail, but the present invention is not limited to these specific examples.

[0015] The crystalline substrate (hereinafter also simply referred to as "substrate") is not particularly limited as long as it does not hinder the objectives of the present invention, and may be a known crystalline substrate. It may be an organic compound or an inorganic compound. In the present invention, it is preferable that the crystalline substrate contains an inorganic compound. In the present invention, it is preferable that the substrate has crystals on part or all of its surface, more preferably that it is a crystalline substrate having crystals on all or part of the main surface on the crystal growth side, and most preferably that it is a crystalline substrate having crystals on all of the main surface on the crystal growth side. The crystal is not particularly limited as long as it does not hinder the objectives of the present invention, and the crystal structure is not particularly limited, but it is preferable that it is a cubic, tetragonal, trigonal, hexagonal, orthorhombic, or monoclinic crystal, and more preferably that it is a crystal oriented to (100) or (200). The crystalline substrate may also have an off-angle, and examples of the off-angle include an off-angle of 0.2° to 12.0°. Here, "off-angle" refers to the angle between the substrate surface and the crystal growth surface. The substrate shape is not particularly limited as long as it is plate-shaped and serves as a support for the insulating film. It may be an insulating substrate or a semiconductor substrate, but in the present invention, the substrate is preferably a Si substrate, more preferably a crystalline Si substrate, and most preferably a crystalline Si substrate oriented to (100). Examples of the substrate material include, in addition to a Si substrate, one or more metals belonging to groups 3 to 15 of the periodic table or oxides of these metals. The shape of the substrate is not particularly limited and may be substantially circular (e.g., circular, elliptical, etc.) or polygonal (e.g., triangular, square, rectangular, pentagonal, hexagonal, heptagonal, octagonal, nonagonal, etc.), and various shapes can be suitably used. Furthermore, in the present invention, a large-area substrate can be used, and by using such a large-area substrate, the area of ​​the insulating film can be increased.

[0016] Furthermore, in the present invention, it is preferable that the crystal substrate has a flat surface, but it is also preferable that the crystal substrate has an uneven shape on part or all of its surface, as this improves the quality of crystal growth of the insulating film. The crystal substrate having the uneven shape only needs to have an uneven portion consisting of recesses or protrusions on part or all of its surface, and the uneven portion is not particularly limited as long as it consists of protrusions or recesses, and may be an uneven portion consisting of protrusions, an uneven portion consisting of recesses, or an uneven portion consisting of both protrusions and recesses. In addition, the uneven portion may be formed from regular protrusions or recesses, or from irregular protrusions or recesses. In the present invention, it is preferable that the uneven portion is formed periodically, and more preferably that it is patterned periodically and regularly. The shape of the uneven portion is not particularly limited, and examples include stripe-like, dot-like, mesh-like, or random-like, but in the present invention, dot-like or stripe-like is preferred, and dot-like is more preferred. Furthermore, if the uneven surfaces are patterned periodically and regularly, it is preferable that the pattern shape of the uneven surfaces be a polygonal shape such as a triangle, quadrilateral (e.g., square, rectangle, or trapezoid), pentagon or hexagon, circular, or elliptical. When the uneven surfaces are formed in a dot shape, it is preferable that the lattice shape of the dots be a grid shape such as a square grid, rhombic grid, triangular grid, or hexagonal grid, and more preferably a triangular grid. The cross-sectional shape of the recesses or protrusions of the uneven surfaces is not particularly limited, but examples include a U-shape, inverted U-shape, wave shape, or a polygonal shape such as a triangle, quadrilateral (e.g., square, rectangle, or trapezoid), pentagon or hexagon. The thickness of the crystal substrate is not particularly limited, but is preferably 50 to 2000 μm, and more preferably 100 to 1000 μm.

[0017] The oxide film is not particularly limited as long as it is an oxide film that can incorporate oxygen atoms into the insulating film as the oxygen supply sacrificial layer, and usually contains an oxidizing material. The oxidizing material is not particularly limited as long as it does not hinder the objective of the present invention, and may be a known oxidizing material. Examples of the oxidizing material include oxides of metals or metalloids. In the present invention, it is preferable that the oxide film contains an oxidizing material of the crystal substrate, and examples of such oxide films include the thermal oxide film of the crystal substrate and the native oxide film. Furthermore, in the present invention, the oxide film may be a sacrificial layer in which part or all of the film disappears or is destroyed when oxygen atoms are incorporated, and in the present invention, it is preferable that the oxide film is an oxygen supply sacrificial layer in which oxygen atoms are incorporated during the crystal growth of the epitaxial layer and the oxide film itself disappears. Furthermore, the oxide film may be patterned, for example, it may be patterned in the shape of stripes, dots, mesh, or random shapes. The thickness of the oxide film is not particularly limited, but is preferably greater than 1 nm and less than 100 nm.

[0018] The insulating film (first epitaxial layer) is not particularly limited as long as it includes an insulator and further includes an epitaxial film in which oxygen atoms from the oxide film are incorporated. Note that "an epitaxial film in which oxygen atoms from the oxide film are incorporated" means that during the crystal growth of the epitaxial film, oxygen atoms from the oxide film were absorbed by the epitaxial film. The epitaxial film is not particularly limited as long as it includes an insulator and is an epitaxial film grown by incorporating oxygen atoms from the oxide film; however, in the present invention, it is preferable that it includes a crystalline oxide, and more preferably a metal oxide. Suitable metal oxides include, for example, oxides of one or more metals belonging to block d of the periodic table, or silicon oxide. Furthermore, in the present invention, it is preferable that the insulating film includes a neutron absorber. The neutron absorber may be a known neutron absorber, and in the present invention, by using such a neutron absorber to incorporate oxygen from the oxide film, adhesion, crystallinity, and the properties of the functional film can be improved. Suitable examples of the neutron-absorbing material include, for example, hafnium (Hf). The insulating film may be composed of one or more epitaxial films.

[0019] In the present invention, it is preferable that a second epitaxial layer, made of a conductive film or a semiconductor film, is laminated on the insulating film, either directly or via another layer. By laminating in this manner, the first epitaxial layer can be regularly transformed at the interface between the first epitaxial layer and the second epitaxial layer so that its lattice constant is substantially the same as that of the second epitaxial layer. As an example of the manner of the regular transformation, for example, a transformation in which the shape is changed to a peak-and-valley structure is a suitable example. In the present invention, it is preferable that the angles between adjacent vertices and bases of the peak-and-valley structure are different, and it is more preferable that the angles are within the range of 30° to 45°. Here, the first epitaxial layer usually has a first crystal plane and a second crystal plane, but since the transformation may cause a difference in lattice constants between the first crystal plane and the second crystal plane, it is preferable that the difference in lattice constants between the first crystal plane and the second crystal plane be within the range of 0.1% to 20%. In the present invention, since the lattice constant of the first crystal plane can be substantially the same as that of the second epitaxial layer, it is easy to achieve a lattice constant difference between the first epitaxial layer and the second epitaxial layer within the range of 0.1% to 20%.

[0020] In the present invention, when a conductive film is laminated on the insulating film, and the conductive film is made of a single crystal film of a conductive metal, a large-area defect-free film can be easily obtained, and not only the function as an electrode but also the properties of the device and the like can be improved. The conductive metal is not particularly limited as long as it does not hinder the objective of the present invention, and examples include gold, silver, platinum, palladium, silver-palladium, copper, nickel, or alloys thereof, but in the present invention, it is preferable to include platinum. In the present invention, according to the above manufacturing method, preferably 100 nm 2 A defect-free single-crystal film can be obtained as an electrode over the above area, more preferably 1000 nm. 2A defect-free single-crystal film can be easily obtained over the above area. Furthermore, a single-crystal film with a thickness of preferably 100 nm or more can be easily obtained as an electrode. When the conductive film, which consists of a single-crystal film of a conductive metal, is laminated on the insulating film, the laminated structure can be suitably used as an electrode substrate in which a crystalline conductive film is laminated on the insulating film.

[0021] The semiconductor film is not particularly limited as long as it contains a semiconductor, and may be a known semiconductor film, but in the present invention, it is preferable that it contains a cubic semiconductor. Examples of the cubic semiconductor include c-BN, c-AlN, c-GaN, c-InN, c-SiC, GaAs, AlAs, InAs, GaP, AlP, InP, or mixed crystal semiconductors thereof. The thickness of the conductive film and the semiconductor film are not particularly limited, but are preferably 10 nm to 1000 μm, and more preferably 10 nm to 100 μm.

[0022] The aforementioned laminated structure can be easily obtained in a method for manufacturing a laminated structure in which an insulating film is laminated on a crystalline substrate via at least an oxide film, by forming the insulating film using oxygen atoms in the oxide film at a temperature of 350°C to 700°C. Within the range of 350°C to 700°C, oxygen atoms in the oxide film can be easily incorporated into the insulating film to promote crystal growth.

[0023] In the present invention, it is preferable to deposit the insulating film using oxygen gas after using oxygen atoms in the oxide film to form the laminate. Furthermore, by forming the film in this manner, a laminated structure can be easily obtained in which an epitaxial film containing a crystalline compound is laminated on a crystalline substrate, and between the crystalline substrate and the epitaxial film, an amorphous thin film containing the constituent metal of the epitaxial film and / or the compound elements of the crystalline compound and / or one or more embedded layers containing the constituent metal and the compound elements are embedded in a part of the crystalline substrate. Furthermore, in the present invention, it is preferable that between the crystalline substrate and the epitaxial film, an amorphous thin film containing the constituent metal of the epitaxial film and the compound elements of the crystalline compound and / or an embedded layer containing the constituent metal and the compound elements is embedded in a part of the crystalline substrate and / or one or more embedded layers containing the constituent metal and the compound elements of the epitaxial film, as this results in better crystallinity of the epitaxial film, etc. Furthermore, in the present invention, it is preferable that the structure has an amorphous thin film between the crystal substrate and the epitaxial film, which contains the constituent metal of the epitaxial film and / or the compound elements of the crystalline compound, and an embedded layer which is embedded in a part of the crystal substrate in one or more layers and contains the constituent metal and the compound elements, as this can further improve the functionality of the epitaxial film. Furthermore, in the present invention, it is preferable that the constituent metal contains Hf, as this promotes stress relaxation and enables multi-stage stress relaxation. Furthermore, in the present invention, it is preferable that the thickness of the amorphous thin film is 1 nm to 10 nm, as this can further improve the crystallinity of the epitaxial film, and such an amorphous thin film with a preferred thickness can be easily obtained by the preferred manufacturing method of the present invention. Furthermore, in the present invention, it is preferable that the shape of the embedded layer has a substantially inverted triangular cross-sectional shape, as this can further improve the functionality of the epitaxial film. This can be easily obtained by appropriately adjusting the thickness of the oxide film and the timing of the introduction of the oxygen gas.

[0024] In the lamination process described above, the means for forming the insulating film is usually preferred, and the means for forming the film may be any known means. In the present invention, it is preferable that the means for forming the film is vapor deposition or sputtering.

[0025] The laminated structure obtained as described above can be used in a semiconductor device as is, or after further processing as desired, according to conventional methods. When using the laminated structure in a semiconductor device, it may be used as is, or other layers (for example, an insulating layer, a semi-insulating layer, a conductive layer, a semiconductor layer, a buffer layer, or other intermediate layers) may be formed on it before use. In the present invention, it is preferable to use the laminated structure as an SOI substrate in which a semiconductor film is laminated on the insulating film.

[0026] The semiconductor device is not particularly limited as long as it does not hinder the objectives of the present invention, and may be a known semiconductor device. It may be a vertical device or a horizontal device, but in the present invention, it is preferable that the semiconductor device is a horizontal device. Examples of the semiconductor device include diodes or transistors (e.g., MOSFETs or JFETs), but insulated gate type semiconductor devices (e.g., MOSFETs or IGBTs) or semiconductor devices having a Schottky gate (e.g., MESFETs) are preferred, MOSFETs and / or IGBTs are more preferred, and horizontal MOSFETs and / or horizontal IGBTs are most preferred.

[0027] Figure 11 shows a lateral IGBT, lateral NMOS, and lateral PMOS suitable for the present invention. In the lateral IGBT, lateral NMOS, and lateral PMOS of Figure 1, an insulating film 26a is formed on a crystal substrate 29, and each element is provided on the insulating film 26a. The lateral IGBT of Figure 11 consists of a gate electrode 21, an emitter electrode 22, a collector electrode 23, an insulating film 26, a p-type semiconductor 27, an n-type semiconductor 28, and n -It is equipped with a p-type semiconductor 28a. Furthermore, the NMOS in Figure 11 includes a gate electrode 21, a drain electrode 24, a source electrode 25, an insulating film 26, a p-type semiconductor 27, an n-type semiconductor 28 and n - It is equipped with a p-type semiconductor 28a. The PMOS in Figure 11 also includes a gate electrode 21, drain electrode 24, source electrode 25, insulating film 26, p-type semiconductor 27 and n - It is equipped with a type semiconductor 28a.

[0028] Figure 12 shows a suitable manufacturing process for the insulated-gate bipolar transistor (IGBT) shown in Figure 11. In the manufacturing process shown in Figure 12, an insulating film 26a is formed on the crystal substrate 29, and further, n - A laminated structure on which a type semiconductor (e.g., Si semiconductor) 28a is formed is used. In Figure 12(a), trenches are provided in the laminated structure using known means, and further, using known means, n - The surface of a type semiconductor (e.g., a Si semiconductor) 28a is oxidized. In Figure 12(b), the laminated structure of Figure 12(a) is treated with polysilicon 31 using known means to fill the trenches with polysilicon 31, and a polysilicon layer is further formed on the oxidized surface. In Figure 12(c), the laminated structure of Figure 12(b) is polished using known means to obtain the laminated structure of Figure 12(c). The obtained laminated structure is subjected to the manufacturing process of various devices using known means.

[0029] The lateral IGBTs, lateral NMOS, and lateral PMOS obtained in this way utilize trench isolation structures for element isolation, resulting in a small isolation area. Furthermore, it is possible to directly configure an inverter using a power supply rectified and smoothed from the commercial power supply. In addition, the high-voltage output section and the control circuit section can be configured on the same chip, enabling the realization of a superior power IC. In particular, because each device within the IC is completely isolated by dielectrics, the influence of parasitic elements can be eliminated, resulting in a highly reliable system.

[0030] In addition to the above-described matters, the semiconductor device of the present invention is further preferably used as a semiconductor device such as a power module, an inverter, or a converter by using known means, and further, for example, in a semiconductor system using a power supply device as a semiconductor device. The power supply device can be manufactured by connecting the semiconductor device to a wiring pattern or the like by using known means. An example of a power supply system is shown in FIG. 13. FIG. 13 shows a power supply system configured using a plurality of the power supply devices and a control circuit. As shown in FIG. 14, the power supply system can be used for a system device in combination with an electronic circuit. An example of a power circuit diagram of the power supply device is shown in FIG. 15. FIG. 15 shows a power circuit of a power supply device including a power circuit and a control circuit. After switching a DC voltage at a high frequency by an inverter (configured by MOSFETs A to D) and converting it to AC, insulation and voltage conversion are performed by a transformer, rectification is performed by rectifying MOSFETs (A to B'), and smoothing is performed by DCL (smoothing coils L1 and L2) and a capacitor to output a DC voltage. At this time, the output voltage is compared with a reference voltage by a voltage comparator, and the inverter and the rectifying MOSFET are controlled by a PWM control circuit so as to obtain a desired output voltage.

Example

[0031] (Example 1) The crystal growth surface side of the Si substrate (100) was processed by RIE, heated in the presence of oxygen to form a thermal oxide film, and then, without using oxygen, the metal of the evaporation source and the oxygen in the oxide film on the Si substrate were thermally reacted by an evaporation method to form an insulating film made of a crystalline oxide on the Si substrate. Then, oxygen was flowed, the temperature was lowered, and the pressure was increased to further form an insulating film by an evaporation method. The conditions of each evaporation method at the time of this film formation were as follows. Evaporation source: Hf, Zr Voltage: 3.5 to 4.75 V Pressure: 3×10 -2 ~6×10 -2 Pa Substrate temperature: 450 to 700 °C

[0032] Next, a platinum (Pt) metal film was formed on the insulating film as a conductive film by sputtering. The conditions for this process are shown below. Equipment: ULVAC QAM-4 sputtering system Pressure: 1.20 × 10 -1 Pa Target: Pt Power: 100W(DC) Thickness: 100nm Substrate temperature: 450~600℃

[0033] The obtained laminated structure was a laminated structure containing an insulating film with good crystallinity. A cross-sectional STEM image of the obtained laminated structure is shown in Figure 8. From Figure 8, it can be seen that a regular peak-and-valley structure is provided at the interface between the insulating film and the conductive film, and that the angles between adjacent vertices and bases of the peak-and-valley structure differ within the range of 30° to 45°. Furthermore, X-ray crystal lattice images of the conductive film are shown in Figures 9 and 10. From Figures 9 and 10, it can be seen that it is a defect-free, large-area conductive film with excellent crystallinity, and in particular, excellent electrode properties. In addition, the crystals of the crystalline substrate, the single-crystal film of crystalline metal oxide, and the conductive film of the laminated structure were measured using an X-ray diffractometer. The XPS measurement results are shown in Figure 16. As is clear from Figure 16, a (Hf,Zr)O2 film and a Pt single-crystal film with good crystallinity were formed on the Si crystalline substrate.

[0034] (Example 2) Except for using nitrogen gas instead of oxygen gas, a platinum (Pt) metal film was formed as a conductive film on a single-crystal film of crystalline metal nitride in the same manner as in Example 1. The crystalline substrate of the laminated structure, the single-crystal film of crystalline metal nitride, and the conductive film were then measured using an X-ray diffractometer. Figure 17 shows the XPS measurement results. As is clear from Figure 17, a (Hf,Zr)N film and a Pt single-crystal film with good crystallinity were formed on the Si crystalline substrate. Furthermore, when measured using the four-terminal method, the obtained single-crystal film of crystalline metal nitride had good conductivity.

[0035] Figure 18 shows the deposition apparatus used in Example 1. The deposition apparatus in Figure 18 is equipped with at least a crucible containing metal sources 101a to 101b, grounds 102a to 102h, ICP electrodes 103a to 103b, cut filters 104a to 104b, DC power supplies 105a to 105b, RF power supplies 106a to 106b, lamps 107a to 107b, Ar source 108, reactive gas source 109, power supply 110, substrate holder 111, substrate 112, cut filter 113, ICP ring 114, vacuum chamber 115, and rotating shaft 116. Note that the ICP electrodes 103a to 103b in Figure 18 have a substantially concave or parabolic shape that curves toward the center of the substrate 112.

[0036] As shown in Figure 18, the substrate 112 is secured on the substrate holder 111. Then, the rotating shaft 116 is rotated using the power supply 110 and a rotating mechanism (not shown) to rotate the substrate 112. The substrate 112 is also heated by lamps 107a to 107b, and the inside of the vacuum chamber 115 is evacuated to create a vacuum or reduced pressure using a vacuum pump (not shown). After that, Ar gas is introduced into the vacuum chamber 115 from the Ar source 108, and the surface of the substrate 112 is cleaned by forming argon plasma on the substrate 112 using DC power supplies 105a to 105b, RF power supplies 106a to 106b, ICP electrodes 103a to 103b, cut filters 104a to 104b, and grounds 102a to 102h.

[0037] Ar gas is introduced into the vacuum chamber 115, and a reactive gas is also introduced using the reactive gas source 109. At this time, the lamp heaters, lamps 107a to 107b, are alternately turned on and off, which allows for the formation of a higher quality crystal growth film.

[0038] STEM analysis was performed on the laminated structure obtained in the same manner as in Example 1. The results are shown in Figures 19 to 21. From Figure 19, it can be seen that an embedded layer 1004 is formed between the crystalline substrate 1011 and the epitaxial layer 1001, and further, amorphous layers 1002 and 1003 are formed. From Figure 20, it can be seen that the first amorphous layer 1002 on the crystalline substrate 1011 contains Si from the crystalline substrate and Zr, which is a constituent metal of the epitaxial layer 1001. From Figure 21, it can be seen that the embedded layer 1004 has a roughly inverted triangular cross-sectional shape and is an oxide containing Hf and Si.

[0039] (Examples of application) One preferred application example of the obtained laminated structure, which is the example of peeling and transfer, will be described in more detail below with reference to the figures, but the present invention is not limited to these application examples. In the present invention, unless otherwise specified, an SOI substrate or an SOI semiconductor device can be manufactured from the laminated structure using known means.

[0040] Figure 1 shows a preferred example of the laminated structure of the present invention. In the laminated structure of Figure 1, an insulating film 3 is formed on a crystalline substrate 1, and a semiconductor layer is further formed on the insulating film 3 as a second epitaxial layer 4.

[0041] Figure 2 shows the laminated structure obtained in the SOI island formation step in the peeling and transfer process. In the SOI island formation step, the laminated structure shown in Figure 1 is used as the SOI substrate, and photolithography is performed to partially remove the semiconductor layer (second epitaxial layer) 4. In this way, the laminated structure shown in Figure 2 is obtained. In the laminated structure shown in Figure 2, the second epitaxial layer is separated into two islands, and the first island 4a and the second island 4b of the second epitaxial layer are formed on the insulating film 3.

[0042] Figure 3 shows the laminated structure obtained in the HF etching step in the peeling and transfer process. In the HF etching step, the BOX layer is etched with HF using the laminated structure shown in Figure 2, leaving pillar-like structures. In the laminated structure shown in Figure 3, the insulating film is in the shape of pillars, with the first pillar 3a and the second pillar 3b of the insulating film (first epitaxial layer) formed on the crystal substrate 1, respectively. Furthermore, in this invention, the adhesion between the crystal substrate and the insulating film is high, and stress relaxation such as normal transformation is observed at the interface between the insulating film and the second epitaxial layer, making it easy to peel off. For example, the HF etching step is not essential and can be omitted.

[0043] Figure 4 shows the laminated structure obtained in the attachment process to the flexible substrate during the peeling and transfer process. In the attachment process, the laminated structure shown in Figure 3 is used to tightly attach the SOI layer surface to a flexible substrate 5, such as PE (polyethylene).

[0044] Figure 5 shows the laminated structure obtained in the peeling step of the peeling and transfer process. In the peeling step, the SOI layer is peeled off and transferred to a flexible substrate. By doing so, the transfer success rate can be improved, which increases the yield in device manufacturing and enables high quality and cost reduction. [Industrial applicability]

[0045] The laminated structure of the present invention is suitably used as an SOI substrate and an SOI semiconductor device. [Explanation of symbols]

[0046] 1. Crystal substrate 2. Oxide film 3. Insulating film (first epitaxial layer) 3a First pillar of the first epitaxial layer 3b Second pillar of the first epitaxial layer 4. The second epitaxial layer 4a The first island of the second epitaxial layer 4b The second island of the second epitaxial layer 5 Flexible circuit board 13 Insulating Film 14 Conductive film 21 Terminal 22 Emitter electrode 23 Collector electrode 24 Drain electrodes 25 Source electrodes 26 Insulating film 26a Insulating film (epitaxial layer) 27 p-type semiconductor 28 n-type semiconductor 28a n - Semiconductor type 29 Crystal Substrate 30 Trench Isolation 31 Polysilicon 101a~101b Metal source 102a~102j Earth 103a~103b ICP electrode 104a~104b cut filter 105a~105b DC power supply 106a~106b RF power supply 107a~107b Lamp 108 Ar source 109 Reactive gas sources 110 Power supply 111 PCB holder 112 circuit boards 113 Cut Filter 114 ICP rings 115 Vacuum chamber 116 Rotation axis 1001 Epitaxial layer 1002 The first amorphous layer 1003 Second amorphous layer 1004 Embedding layer 1011 circuit board

Claims

1. A method for manufacturing a laminated structure in which an insulating layer containing a crystalline compound is stacked on a crystal substrate, the method comprising the steps of providing a compound element supply sacrificial layer containing a compound element on the crystal substrate, and forming the insulating layer using the compound element of the compound element supply sacrificial layer.

2. 2. The method for producing a laminated structure according to claim 1, wherein after using the compound element, a compound element gas is introduced to form the insulating layer in the presence of the compound element gas.

3. 2. The method for producing a laminated structure according to claim 1, wherein the lamination is carried out by vapor deposition or sputtering.

4. 4. The method for manufacturing a laminated structure according to claim 1, wherein the compound element supply sacrificial layer is an oxide film provided on the crystal substrate.

5. A laminated structure in which an insulating layer is laminated on a crystal substrate, characterized in that the insulating layer incorporates oxygen atoms in a compound element supply sacrificial layer containing a compound element provided on the crystal substrate.

6. 6. The laminated structure according to claim 5, wherein the crystalline substrate is a crystalline Si substrate.

7. The laminated structure according to claim 5 , wherein the compound element supply sacrificial layer includes a compound film.

8. 8. The laminate structure according to claim 7, wherein the compound film has a thickness of more than 1 nm and less than 100 nm.

9. 6. The laminated structure according to claim 5, wherein the insulating layer is an epitaxial film containing a crystalline compound.

10. A laminated structure in which an insulating layer containing a crystalline compound is laminated on a crystalline substrate, and a crystalline conductive film or semiconductor film is further laminated on the insulating layer, characterized in that the insulating layer incorporates a compound element in a compound element supply sacrificial layer containing a compound element provided on the crystalline substrate.

11. 6. The laminated structure according to claim 5, further comprising an SOI substrate having a semiconductor film laminated on the insulating layer.

12. 6. The laminated structure according to claim 5, further comprising an electrode substrate having a crystalline conductive film laminated on the insulating layer.

13. The laminated structure according to claim 9, further comprising: an amorphous thin film containing a constituent metal of the epitaxial film and / or the crystal substrate and a compound element of the crystalline compound, and / or one or more embedded layers embedded in a portion of the crystal substrate, the embedded layers containing the constituent metal and the compound element, between the crystal substrate and the epitaxial film.

14. The laminated structure according to claim 13, further comprising: an amorphous thin film between the crystal substrate and the epitaxial film, the amorphous thin film containing the constituent metal of the epitaxial film and the compound element; and / or one or more embedded layers embedded in a portion of the crystal substrate and containing the constituent metal of the epitaxial film and the compound element.

15. 14. The laminated structure according to claim 13, further comprising: an amorphous thin film between the crystal substrate and the epitaxial film, the amorphous thin film containing the constituent metal of the epitaxial film and / or the crystal substrate and the compound element; and one or more buried layers embedded in a portion of the crystal substrate and containing the constituent metal and the compound element.

16. The laminated structure according to any one of claims 13 to 15, wherein the constituent metals include Hf.

17. 16. The laminate structure according to claim 13, wherein the amorphous thin film has a thickness of 1 nm to 10 nm.

18. 16. The laminated structure according to claim 13, wherein the buried layer has a cross-sectional shape of a substantially inverted triangle.

19. An electronic device, an electronic equipment, or a system including a laminate structure, wherein the laminate structure is the laminate structure according to any one of claims 13 to 15.

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