Substrate chuck, lithography device, and article manufacturing method

Abstract

To provide a technique advantageous for improving the accuracy of correcting the shape of a substrate.SOLUTION: A substrate chuck is provided which adsorbs a substrate on a substrate holding surface to hold the substrate. A first pressure space and a second pressure space partitioned by a partition wall from the first pressure space and adjacent to the first pressure space are formed below a top plate that constitutes the substrate holding surface. A negative pressure or a positive pressure is applied individually to the first pressure space and the second pressure space, and thereby an area of the substrate holding surface above the first pressure space and the second pressure space is displaced. The first pressure space is formed below a portion of the substrate holding surface for supporting a substrate end.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to a substrate chuck, a lithographic apparatus, and a method for manufacturing an article. [Background technology]

[0002] Photolithography is known as a method for manufacturing articles such as semiconductor devices and MEMS. In photolithography, a pattern formed on a mold is transferred to a region (shot region) on a substrate. In this transfer, it is important to match the position and shape of the pattern and the shot region. Cited Document 1 discloses that a partition wall is formed on the substrate holding surface of a substrate chuck near the outer periphery of the substrate, which tends to be particularly distorted, and the pressure in the space partitioned by the partition wall is individually controlled to correct the distorted shape of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-92178 A Summary of the Invention [Problem to be solved by the invention]

[0004] As semiconductor devices become more highly integrated, circuit patterns are becoming more multi-layered. In multi-layered substrates, accumulation of film distortions and the like that occur during film formation can cause warping of various shapes. According to the technology disclosed in Patent Document 1, it is possible to correct steeply distorted shapes near the outer periphery of the substrate. However, the technology disclosed in Patent Document 1 is not suitable for correcting gradual distorted shapes.

[0005] The present invention has been made in consideration of the above problems with the conventional technology, and provides a technology that is advantageous for achieving high-precision correction of the shape of a substrate. [Means for solving the problem]

[0006] According to one aspect of the present invention, there is provided a substrate chuck that adsorbs and holds a substrate on a substrate holding surface, the substrate chuck comprising: a first pressure space and a second pressure space adjacent to the first pressure space and separated from the first pressure space by a partition wall formed below a top plate that constitutes the substrate holding surface; and a substrate chuck configured to displace regions of the substrate holding surface above the first pressure space and the second pressure space by separately applying negative pressure or positive pressure to the first pressure space and the second pressure space, the substrate chuck being characterized in that the first pressure space is formed below a portion of the substrate holding surface that supports an edge of the substrate. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique that is advantageous for achieving high-precision correction of the shape of a substrate. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing the configuration of an imprint apparatus. [Diagram 2] FIG. 4 is a diagram showing the configuration of a substrate chuck. [Diagram 3] 4 is a cross-sectional view of the substrate chuck in the vicinity of the outer periphery of the substrate. [Figure 4] 5A and 5B are diagrams for explaining shape correction of the outer periphery of a substrate. [Diagram 5] 5A and 5B are diagrams for explaining shape correction of the outer periphery of a substrate. [Figure 6] FIG. 13 is a diagram showing a modified example of the pressure space. [Figure 7] 5A to 5C are diagrams for explaining shape correction of the outer periphery of a substrate in the first embodiment. [Figure 8] 13A to 13C are diagrams for explaining shape correction of the outer periphery of a substrate in the second embodiment. [Figure 9] 13A to 13C are diagrams for explaining shape correction of the outer periphery of a substrate in the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] First Embodiment The present disclosure relates to a lithography apparatus for forming a pattern or a film on a substrate. Lithography apparatuses include imprint apparatuses, film forming apparatuses (flattening apparatuses), exposure apparatuses, and the like. The imprint apparatus is an apparatus for forming a pattern on a substrate by curing an imprint material supplied on the substrate while a mold (original) is in contact with the imprint material. The film forming apparatus is an apparatus for forming a flat film on a substrate by curing a curable composition supplied on the substrate while a flat template is in contact with the curable composition. The exposure apparatus is an apparatus for transferring a pattern of an original onto a substrate via a projection optical system. For example, the exposure apparatus exposes a photoresist applied on a substrate through an original (reticle) which is an exposure mask, thereby forming a latent image corresponding to the pattern of the original in the photoresist. In the following, in order to provide a concrete example, an example in which the lithography apparatus is configured as an imprint apparatus will be described.

[0011] FIG. 1 is a schematic diagram of an imprint apparatus 1 in an embodiment. In this specification and the drawings, directions are shown in an XYZ coordinate system with the horizontal plane as the XY plane. In general, a substrate 5, which is an exposed substrate, is placed on a substrate stage 6 so that its surface is parallel to the horizontal plane (XY plane). Therefore, in the following, directions perpendicular to each other in a plane along the surface of the substrate 5 are referred to as the X-axis and Y-axis, and a direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis. In the following, directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are referred to as the X-direction, Y-direction, and Z-direction, respectively, and the rotation direction around the X-axis, the rotation direction around the Y-axis, and the rotation direction around the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

[0012] First, an overview of an imprinting apparatus according to an embodiment will be described. The imprinting apparatus is an apparatus that brings an imprinting material supplied onto a substrate into contact with a mold and applies energy for curing to the imprinting material, thereby forming a pattern of a cured material to which the concave-convex pattern of the mold has been transferred.

[0013] As the imprint material, a curable composition (sometimes called an uncured resin) that is cured by applying energy for curing is used. As the energy for curing, electromagnetic waves, heat, etc. can be used. The electromagnetic waves can be, for example, light having a wavelength selected from the range of 10 nm to 1 mm, such as infrared rays, visible light, and ultraviolet rays. The curable composition can be a composition that is cured by irradiation with light or by heating. Among these, a photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, and a polymer component. The imprint material can be arranged on the substrate in the form of droplets, or in the form of islands or films formed by connecting a plurality of droplets, by an imprint material supply device (supply unit 8 in FIG. 1). The viscosity of the imprint material (at 25° C.) may be, for example, 1 mPa·s or more and 100 mPa·s or less. Examples of materials that may be used for the substrate include glass, ceramics, metals, semiconductors, and resins. If necessary, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate may be, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

[0014] The imprint apparatus 1 may include an irradiation unit 2 that irradiates light, a mold holding unit 4 that holds a mold 3, a substrate chuck 7 that holds a substrate 5, and a substrate stage 6 that moves while mounting the substrate chuck 7. The imprint apparatus 1 may further include a supply unit 8 that supplies an imprint material, an alignment optical system 9, and a control unit 14.

[0015] The light emitted from the irradiation unit 2 is reflected by the optical component 10, passes through the mold 3, and reaches the imprint material on the substrate 5. The optical component 10 may include an optical element for adjusting the light emitted from the irradiation unit 2 to light appropriate for the imprint process.

[0016] The outer periphery of the mold 3 can be rectangular. The mold 3 has a pattern portion 3a formed three-dimensionally on the surface facing the substrate 5. The material of the mold 3 is a material that can transmit ultraviolet light, such as quartz glass.

[0017] The mold holding unit 4 is fixed to a bridge base plate 13 supported by a base plate 11 via a support 12. The substrate stage 6 is fixed to the base plate 11. The mold holding unit 4 may include a mold holding mechanism 41 that holds the mold 3 by vacuum suction or electrostatic force, and a mold moving mechanism 42 that moves the mold holding mechanism 41 in the Z direction. The mold holding mechanism 41 and the mold moving mechanism 42 have an opening in the center (inside) so that the light from the irradiation unit 2 is irradiated onto the imprint material on the substrate 5. The mold moving mechanism 42 may include an actuator such as a voice coil motor or an air cylinder. The mold moving mechanism 42 moves the mold holding mechanism 41 (mold 3) in the Z direction to bring the mold 3 into contact with the imprint material on the substrate or to separate the mold 3 from the imprint material on the substrate. The mold moving mechanism 42 may be configured to have a function of adjusting the position of the mold holding mechanism 41 not only in the Z direction but also in the X direction or Y direction. Furthermore, the mold moving mechanism 42 may be configured to have a function for adjusting the position of the mold holding mechanism 41 in the θZ direction and a tilt function for adjusting the inclination of the mold holding mechanism 41 (i.e., the position in the θX and θY directions).

[0018] The mold holding unit 4 may further include a mold deformation mechanism 43. The mold deformation mechanism 43 corrects the shape of the mold 3 (pattern portion 3a) by applying an external force or displacement to the side surface of the mold 3. The mold deformation mechanism 43 includes, for example, a plurality of actuators, and is configured to apply pressure to a plurality of points on each side surface of the mold 3.

[0019] The substrate stage 6 may include a substrate chuck 7, a stage driver 61 for driving the substrate chuck 7, and a base plate 62 on which the substrate chuck 7 and the stage driver 61 are mounted. The substrate 5 and the mold 3 may be aligned in the X and Y directions by the substrate stage 6 when the mold 3 and the imprint material on the substrate 5 are brought into contact with each other. The substrate chuck 7 adsorbs and holds the substrate 5 on the substrate holding surface by, for example, vacuum adsorption or electrostatic action. The stage driver 61 mechanically holds the substrate chuck 7 and drives the substrate chuck 7 in the X and Y directions. For example, a linear motor may be used for the stage driver 61. The stage driver 61 may be composed of a plurality of drive systems including a coarse drive system and a fine drive system. The stage driver 61 may have a drive function for driving the substrate 5 in the Z direction, a position adjustment function for adjusting the position of the substrate 5 in the θZ direction, and a tilt function for adjusting the inclination of the substrate 5 (i.e., the position in the θX and θY directions).

[0020] For example, an encoder system including a scale provided on the substrate stage 6 and a head (optical device) provided on the stage driving unit 61 may be used to measure the position of the substrate stage 6, but is not limited to this. For example, for example, an interferometer system including a laser interferometer and a reflecting mirror provided on the stage driving unit 61 may be used to measure the position of the substrate stage 6.

[0021] The supply unit 8 supplies the imprint material onto the substrate 5. The imprint material supplied from the supply unit 8 onto the substrate 5 can be appropriately selected depending on various conditions in the manufacturing process of a semiconductor device. The position and amount of the imprint material discharged from the discharge port of the supply unit 8 can be appropriately determined in consideration of the thickness and density of the pattern formed in the imprint material on the substrate. In order to allow the imprint material supplied onto the substrate to sufficiently fill the pattern formed in the mold 3, a certain period of time may be allowed to pass while the mold 3 and the imprint material are in contact with each other.

[0022] The alignment optical system 9 measures the positional deviation in the X and Y directions between the alignment mark formed on the substrate 5 and the alignment mark formed on the mold 3. Based on the measured positional deviation, the position of the substrate stage 6 can be adjusted.

[0023] The imprint apparatus 1 may further include a height measuring device (not shown) that measures the distance to the upper surface of the substrate 5. The height measuring device may be an external device to the imprint apparatus 1. In that case, data measured by the height measuring device may be transmitted to the imprint apparatus 1 and stored in the memory of the control unit 14.

[0024] The control unit 14 is configured by, for example, a computer including a CPU, a memory, etc. The control unit 14 comprehensively controls the operation of the imprint apparatus 1 in accordance with a program stored in the memory.

[0025] The configuration of the substrate chuck 7 in the first embodiment will be described with reference to Fig. 2. Fig. 2(a) is a plan view showing the substrate holding surface of the substrate chuck 7, Fig. 2(b) is a side view of the substrate chuck 7, and Fig. 2(c) is a cross-sectional view taken along the line α-α' shown in Fig. 2(b).

[0026] 2(a), a plurality of substrate holding pins 7a for supporting a substrate are arranged on the substrate holding surface of the substrate chuck 7. A partition wall 7b that defines a vacuum suction region between the substrate 5 and the substrate chuck 7 is formed on the substrate holding surface of the substrate chuck 7 at a position corresponding to the outermost periphery of the substrate 5. In the embodiment, the upper surface of the partition wall 7b serves as a portion that supports the edge (lower surface) of the substrate.

[0027] 2(c), a ring-shaped pressure space 7c is formed inside the substrate chuck 7. A flow path 7d is connected to the pressure space 7c so as to communicate with the pressure space 7c. The width of the pressure space 7c is determined by the difference between an outer diameter 7g and an inner diameter 7e.

[0028] 3 is a cross-sectional view of the substrate chuck 7 near the outer periphery of the substrate 5. The substrate chuck 7 is fixed to the substrate stage driving unit 61 by vacuum suction. To achieve fixation by vacuum suction, an adsorption space 7j is formed on the lower surface of the substrate chuck 7. A flow path 61a communicating with the adsorption space 7j is disposed in the substrate stage 61. The flow path 61a, and flow paths 61b and 7d described below are connected to the pressure control unit 16. Fixation of the substrate chuck 7 and the substrate stage 61 by vacuum suction is achieved by exhausting air through the flow path 61a and applying negative pressure to the adsorption space 7j.

[0029] In one example, the substrate chuck 7 holds the substrate 5 by a vacuum suction method. When the substrate 5 is placed on the substrate chuck 7, the substrate 5 is supported by a plurality of substrate holding pins 7a, and a suction space 7i, which is a closed space formed by the substrate holding surface, the substrate 5, and the partition wall 7b, is formed. When exhaust is performed through a flow path 61b communicating with the suction space 7i, the suction space 7i becomes negative pressure. As a result, the substrate 5 is held by the substrate chuck 7. Note that the substrate chuck 7 may be an electrostatic chuck that holds the substrate 5 by electrostatic action instead of using such a vacuum suction method.

[0030] With reference to FIG. 4 and FIG. 5, the shape correction of the outer periphery of the substrate in the first embodiment will be described. FIG. 4 and FIG. 5 are cross-sectional views of the substrate chuck 7 near the outer periphery of the substrate 5, similar to FIG. 3. When negative pressure or positive pressure is applied to the ring-shaped pressure space 7c through the flow path 7d, the substrate holding surface above the pressure space 7c is deformed. FIG. 4 shows a state in which negative pressure is applied to the pressure space 7c through the flow path 7d and the substrate holding surface above the pressure space 7c is deformed into a concave shape. FIG. 5 shows a state in which positive pressure is applied to the pressure space 7c through the flow path 7d and the substrate holding surface above the pressure space 7c is deformed into a convex shape. Since the substrate 5 held by the substrate chuck 7 follows the shape of the substrate holding surface, the substrate 5 is also deformed according to the deformation of the substrate holding surface. This makes it possible to correct the distortion of the outer periphery of the substrate 5. The value of the pressure applied to the pressure space 7c can be determined based on the amount of distortion of the substrate 5 measured using the alignment optical system 9, a height measuring device, or an external measuring device.

[0031] The pressure space 7c is formed below the portion of the substrate holding surface that supports the substrate edge (i.e., the partition wall 7b). The structural features of the pressure space 7c will be described. In one example, the pressure space 7c is defined by an inner peripheral wall 7c1 arranged closer to the center of the substrate chuck than the partition wall 7b, and an outer peripheral wall 7c2 arranged closer to the outer periphery of the substrate chuck than the partition wall 7b. In this case, the relationship between the inner diameter 7e and the outer diameter 7g of the pressure space 7c and the radius 5a of the substrate 5 must satisfy the following formula.

[0032] Inner diameter 7e<Radius 5a<Outer diameter 7g...(Formula 1) If the relationship of formula 1 is not satisfied, for example, if the inner diameter 7e>radius 5a, the outer periphery of the substrate 5 cannot be deformed even if the substrate holding surface above the pressure space 7c is deformed. Even if the inner diameter 7e=radius 5a, the amount of deformation of the edge 5b of the substrate 5 is 0 even if the substrate holding surface above the pressure space 7c is deformed. In general, the amount of distortion of a substrate tends to increase from the center to the edge. Therefore, the edge 5b of the substrate 5 needs to be deformable. To achieve this, the relationship of formula 1 needs to be satisfied.

[0033] Furthermore, it is preferable that the relationship between the inner diameter 7e and outer diameter 7g of the pressure space 7c, and the radius 5a of the substrate 5 satisfies the following formulas 2 and 3.

[0034] Inner diameter 7e≦radius 5a-(substrate thickness 5c×1.5) Formula 2 Outer diameter 7g ≧ radius 5a + (substrate thickness 5c × 1.5) Formula 3 This is based on the required amount of distortion correction of the substrate 5. The amount of distortion of the outer periphery of the substrate 5 is often on the order of several nm to several μm, and in most cases, it is desired to cause a deformation of at least 1 nm or more. In one example, since the substrate 5 is held by vacuum suction, the suction pressure of the substrate 5 becomes a force that makes the substrate 5 conform to the substrate chuck 7 (a force that deforms the substrate 5). Here, even if the substrate chuck 7 can be deformed by 1 nm or more, if the substrate 5 cannot be deformed by 1 nm or more due to the suction pressure, it is impossible to make the substrate 5 conform to the substrate chuck 7.

[0035] Here, the conditions required to deform the outer periphery of the substrate by 1 nm are roughly calculated. The deformation of the outer periphery of the substrate follows the deformation of the pressure space 7c. The pressure space 7c is deformed by the negative pressure applied through the flow path 7d. Therefore, the substrate holding surface above the pressure space 7c can be simplified to a beam to which a uniformly distributed load is applied by negative pressure to the fixed ends A and A' (see FIG. 4). Then, the substrate 5 can also be simplified to a beam fixed at both ends to which a uniformly distributed load is applied by the chucking pressure. Therefore, the conditions required to deform the outer periphery of the substrate by 1 nm can be determined as conditions under which the maximum deflection amount that can be caused by the chucking pressure is 1 nm or more. The deformation amount of the substrate 5 can be roughly calculated by focusing on the pressure space width 7h, which corresponds to the length of the beam. The material of the substrate 5 is silicon, and the diameter of the substrate 5 is 300 mm (12 inches). The parameters are defined as follows.

[0036] Uniformly distributed load due to suction pressure of substrate 5: w [N / mm 2 ], Beam length: l [mm], Young's modulus (longitudinal elastic modulus) E [N / mm 2 ], Moment of inertia: I [mm 4 ] At this time, the maximum deformation (maximum deflection) σ is expressed by the following formula.

[0037] σ=wl 4 / (384EI) ···Equation 4 For example, the chucking pressure of the substrate 5 is −100 kPa=−100 N / mm 2 (gauge pressure), the thickness 5c of the substrate 5 is 0.775 mm according to the SEMI standard, and the Young's modulus of the substrate 5 is 190 GPa = 190000 Nmm 2 In addition, regarding the second moment of area I of the rectangular cross section, if the long side b is the circumference of the substrate 5 (2 × substrate radius 5a × pi π) and the short side h is the thickness 5c of the substrate 5, the second moment of area I is expressed as follows: I=bh 3 / 12=36.6mm 4 When the width 7h of the pressure space 7c, which corresponds to the length of the beam, is three times the substrate thickness 5c, the maximum deflection σ is calculated as follows from equation 4:

[0038] σ≒1.10nm...Equation 5 At this time, the deformation amount of the end 5b of the substrate 5 is the largest when the end 5b of the substrate 5 is at the center position of the width 7h of the pressure space 7c (position of width 7h÷2). Therefore, if the width 7h of the pressure space c is three times or more the thickness 5c of the substrate 5, the outer periphery of the substrate can be deformed by 1 nm or more. In other words, if the inner diameter 7e of the pressure space 7c is 1.5 times or more smaller than the radius 5c of the substrate 5 and the outer diameter 7g of the pressure space 7c is 1.5 times or more larger than the radius 5c of the substrate 5, the outer periphery of the substrate can be deformed by 1 nm or more. Therefore, in this embodiment, it is preferable to satisfy the above-mentioned formulas 2 and 3.

[0039] FIG. 6 shows a modified example of the pressure space 7c. As shown in FIG. 6, the cross-sectional area of ​​the wall surface 7k on the substrate holding surface side of the pressure space 7c may vary along the substrate radial direction. This configuration makes it possible to locally change the deformation of the substrate holding surface when pressure is applied to the pressure space 7c. For example, as shown in FIG. 6, by partially increasing the cross-sectional area of ​​the wall surface 7k on the substrate holding surface side, the amount of deformation of the increased cross-sectional area portion can be reduced. Conversely, by partially decreasing the cross-sectional area of ​​the wall surface 7k on the substrate holding surface side, the amount of deformation of the reduced cross-sectional area portion can be increased.

[0040] In the above example, the pressure space 7c is deformed by supplying and discharging air to and from the pressure space 7c, but this is not limiting. The pressure space 7c may be deformed by using a fluid other than gas.

[0041] In the above example, one pressure space is formed under the portion of the substrate holding surface that supports the substrate edge (i.e., partition wall 7b). In the following, an example in which a plurality of pressure spaces are formed will be described.

[0042] FIG. 7 is a cross-sectional view of the substrate chuck 7 near the outer periphery of the substrate 5. In FIG. 7, a plurality of pressure spaces adjacent to each other are formed under the top plate T constituting the substrate holding surface of the substrate chuck 7. As described above, the pressure space 7c (hereinafter referred to as the "first pressure space") is formed at a position that satisfies the formula 1. Furthermore, a ring-shaped second pressure space 7c' is formed on the inner periphery side of the first pressure space 7c. The first pressure space 7c and the second pressure space 7c' are separated by a partition that constitutes the inner periphery wall 7c1. A flow path 7d' that communicates with the second pressure space 7c' is disposed in the substrate chuck 7. The flow path 7d' is connected to the pressure control unit 16. The flow path 7d' is a system separate from the flow path 7d. Therefore, the first pressure space 7c and the second pressure space 7c' can be independently pressure-controlled. The pressure control unit 16 can control the pressure of each pressure space upon receiving a command from the control unit 14. The control unit 14 and the pressure control unit 16 can be configured separately. However, the control unit 14 and the pressure control unit 16 may be understood as an integrated configuration. The control unit 14 controls the pressure inside each pressure space of the substrate chuck via the pressure control unit 16 based on the shape information of the substrate. This makes it possible to deform the outer periphery of the substrate fixed by the substrate chuck on the substrate stage.

[0043] The substrate chuck 7 is configured to displace the regions above the first pressure space 7c and the second pressure space 7c' of the substrate holding surface by applying a negative pressure or a positive pressure to the first pressure space 7c and the second pressure space 7c' separately. This configuration makes it possible to correct more complicated distortions. For example, applying a negative pressure to the first pressure space 7c and a positive pressure to the second pressure space 7c' makes it possible to correct distortions of uneven shapes. In addition, in order to accommodate various uneven shapes, it is also possible to apply a positive pressure to the first pressure space 7c and a negative pressure to the second pressure space 7c', or to apply a negative pressure or a positive pressure to both the first pressure space 7c and the second pressure space 7c'.

[0044] In the example of Fig. 7, two pressure spaces independent of each other are formed, but in order to correct more complicated distortions, an additional pressure space may be formed. Also, the embodiment shown in Fig. 6 may be applied to the second pressure space 7c' in Fig. 7.

[0045] <Second embodiment> FIG. 8 is a cross-sectional view of the substrate chuck 7 near the outer periphery of the substrate 5 in the second embodiment. As in the first embodiment (FIG. 7), the first pressure space 7c is configured to satisfy formula 1. In the second embodiment, a ring-shaped second pressure space 7c' is formed below the first pressure space 7c. In one example, the inner peripheral wall of the second pressure space 7c' is formed closer to the center of the substrate chuck than the inner peripheral wall of the first pressure space 7c. For example, in FIG. 8, the inner diameter 7e' of the second pressure space 7c' is smaller than the inner diameter 7e of the first pressure space 7c.

[0046] A flow path 7d" communicating with the second pressure space 7c' is arranged in the substrate chuck 7. The flow path 7d" is connected to a pressure control unit 16. The flow path 7d" is a separate system from the flow path 7d. Therefore, the pressures of the first pressure space 7c and the second pressure space 7c' can be controlled independently. In the example of FIG. 8, the first pressure space 7c and the second pressure space 7c' are deformed simultaneously, but one of them may be deformed at a time depending on the required amount of distortion correction.

[0047] According to this configuration, for example, when the origin of the distorted shape of the outer periphery of the substrate occurs inside the region that can be corrected by the first pressure space 7c, it becomes possible to correct the region that is difficult to correct only by the first pressure space 7c by deforming the second pressure space 7c'. Therefore, according to this embodiment, the distortion correction effect can be further improved.

[0048] In the example of Fig. 8, two pressure spaces independent of each other are formed, but in order to correct more complicated distortion, an additional pressure space may be formed. Also, the configuration of the second embodiment may be combined with the configuration of the first embodiment described above.

[0049] <Third embodiment> According to the configuration of the first embodiment (FIG. 7) described above, it is possible to form combinations of concave and convex deformations, convex and concave deformations, convex and convex deformations, and concave and concave deformations from the center to the outer periphery of the substrate. However, the configuration of the first embodiment does not allow the creation of a single continuous convex portion.

[0050] FIG. 9 is a cross-sectional view of the substrate chuck 7 near the outer periphery of the substrate 5 in the third embodiment. As in the first embodiment, the first pressure space 7c is configured to satisfy formula 1. In the third embodiment, a ring-shaped second pressure space 7c' is further formed on the inner periphery side of the first pressure space 7c. A flow path 7d' communicating with the second pressure space 7c' is arranged in the substrate chuck 7. The flow path 7d' is connected to a pressure control unit 16. In the third embodiment, a ring-shaped third pressure space 7c" separated from the first pressure space 7c and the second pressure space 7c' is formed below a region spanning the first pressure space 7c and the second pressure space 7c'.

[0051] As shown in FIG. 9, the inner peripheral wall of the third pressure space 7c" is formed closer to the outer periphery of the substrate chuck than the inner peripheral wall of the second pressure space 7c', and the outer peripheral wall of the third pressure space 7c" is formed closer to the center of the substrate chuck than the outer peripheral wall of the first pressure space 7c. Therefore, in this embodiment, the outer diameter of the third pressure space 7c" is smaller than the outer diameter 7g of the first pressure space 7c, and the inner diameter of the third pressure space 7c" is larger than the inner diameter 7e of the second pressure space 7c'.

[0052] A flow path 7d'' communicating with the third pressure space 7c'' is arranged within the substrate chuck 7. The flow path 7d'' is connected to a pressure control unit 16. The flow paths 7d, 7d', and 7d'' are separate systems. Therefore, the pressures of the first pressure space 7c, the second pressure space 7c', and the third pressure space 7c'' can be controlled independently.

[0053] According to this configuration, in addition to the effects obtained in the first and second embodiments, the following effect can be obtained. That is, by pressurizing only the third pressure space 7c'', it is possible to create a single convex portion that could not be created with the configuration of the second embodiment. Furthermore, by increasing the number of independently controllable pressure spaces to three, the degree of freedom in the concave-convex shape that can be formed is increased. As a result, the degree of freedom in distortion correction is improved.

[0054] <Embodiment of the article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The article manufacturing method according to the present embodiment includes a step of transferring a pattern of an original onto a substrate using the above-mentioned lithography apparatus (exposure apparatus, imprint apparatus, drawing apparatus, etc.) and a step of processing the substrate onto which the pattern has been transferred in the above step. Furthermore, the manufacturing method includes other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0055] The disclosure herein includes at least the following substrate chuck, lithographic apparatus, and method of manufacturing an article. (Item 1) A substrate chuck that adsorbs and holds a substrate on a substrate holding surface, Under the top plate constituting the substrate holding surface, A first pressure space; a second pressure space adjacent to the first pressure space, the second pressure space being separated by a partition wall; is formed, a negative pressure or a positive pressure is separately applied to the first pressure space and the second pressure space to displace regions of the substrate holding surface above the first pressure space and the second pressure space; the first pressure space is formed below a portion of the substrate holding surface that supports an edge of the substrate; A substrate chuck comprising: (Item 2) 2. The substrate chuck described in item 1, characterized in that the first pressure space is defined by an inner wall arranged closer to the center of the substrate chuck than the portion, and an outer wall arranged closer to the outer periphery of the substrate chuck than the portion. (Item 3) 3. The substrate chuck according to item 1 or 2, wherein the second pressure space is formed on the inner periphery side of the first pressure space. (Item 4) 3. The substrate chuck according to item 1 or 2, wherein the second pressure space is formed below the first pressure space. (Item 5) 5. The substrate chuck according to item 4, wherein an inner peripheral wall of the second pressure space is formed closer to the center of the substrate chuck than the inner peripheral wall of the first pressure space. (Item 6) 4. The substrate chuck according to item 3, further comprising a third pressure space separated from the first pressure space and the second pressure space and formed below the first pressure space and the second pressure space. (Item 7) 7. The substrate chuck described in item 6, characterized in that an inner wall of the third pressure space is formed closer to the outer periphery of the substrate chuck than an inner wall of the second pressure space, and an outer periphery wall of the third pressure space is formed closer to the center of the substrate chuck than an outer periphery wall of the first pressure space. (Item 8) A substrate chuck according to any one of items 1 to 7; a substrate stage that carries the substrate chuck and moves; a control unit that controls a pressure inside each pressure space of the substrate chuck based on shape information of the substrate, thereby deforming an outer periphery of the substrate fixed by the substrate chuck on the substrate stage; a control unit for controlling a shape of the substrate and a control portion for controlling the shape of the substrate. (Item 9) 9. The lithography apparatus according to item 8, wherein the lithography apparatus is configured as an imprint apparatus that forms a pattern in an imprint material on a substrate using the original mold. (Item 10) 9. The lithography apparatus according to item 8, wherein the lithography apparatus is configured as an exposure apparatus that transfers a pattern of the original onto the substrate via a projection optical system. (Item 11) forming a pattern on a substrate using a lithographic apparatus according to any one of items 8 to 10; processing the substrate on which the pattern is formed; and producing an article from the processed substrate.

[0056] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0057] 1: imprint device, 2: irradiation unit, 3: mold, 4: mold holding unit, 5: substrate, 6: substrate stage, 7: substrate chuck, 7a: substrate holding pin, 7b: partition wall, 7c: pressure space, 16: pressure control unit

Claims

1. A substrate chuck that holds a substrate by suction on a substrate holding surface, Below the substrate holding surface: a first pressure space; a second pressure space adjacent to the first pressure space and separated from the first pressure space by a partition wall; is formed, a negative pressure or a positive pressure is applied to the first pressure space and the second pressure space separately, thereby displacing regions of the substrate holding surface above the first pressure space and the second pressure space; the first pressure space is formed below a portion of the substrate holding surface that supports an edge of the substrate; A substrate chuck characterized by:

2. 2. The substrate chuck according to claim 1, wherein the first pressure space is defined by an inner peripheral wall positioned closer to the center of the substrate chuck than the portion, and an outer peripheral wall positioned closer to the outer periphery of the substrate chuck than the portion.

3. 2. The substrate chuck according to claim 1, wherein the second pressure space is formed on the inner peripheral side of the first pressure space.

4. 2. The substrate chuck according to claim 1, wherein the second pressure space is formed below the first pressure space.

5. 5. The substrate chuck according to claim 4, wherein an inner peripheral wall of the second pressure space is formed closer to the center of the substrate chuck than the inner peripheral wall of the first pressure space.

6. 4. The substrate chuck according to claim 3, further comprising a third pressure space below the first pressure space and the second pressure space, the third pressure space being separated from the first pressure space and the second pressure space.

7. 7. The substrate chuck of claim 6, wherein an inner wall of the third pressure space is formed closer to the outer periphery of the substrate chuck than an inner wall of the second pressure space, and an outer wall of the third pressure space is formed closer to the center of the substrate chuck than an outer wall of the first pressure space.

8. The substrate chuck according to claim 1 ; a substrate stage that carries the substrate chuck and moves; a control unit that controls the pressure inside each pressure space of the substrate chuck based on shape information of the substrate, thereby deforming the outer periphery of the substrate fixed by the substrate chuck on the substrate stage; and transferring a pattern of an original onto the substrate whose shape is controlled by the control unit.

9. 9. The lithography apparatus according to claim 8, wherein the lithography apparatus is configured as an imprint apparatus that forms a pattern in an imprint material on a substrate using a mold that is the original.

10. 9. The lithography apparatus according to claim 8, wherein the lithography apparatus is configured as an exposure apparatus that transfers the pattern of the original onto the substrate via a projection optical system.

11. forming a pattern on a substrate using a lithographic apparatus according to any one of claims 8 to 10; processing the substrate on which the pattern is formed; and manufacturing an article from the processed substrate.

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