Manufacturing method for semiconductor device and semiconductor device

Abstract

To simplify a manufacturing process, enhance the bonding strength between a semiconductor element and a metal frame, and improve the thermal conductivity of the semiconductor element in a semiconductor device in which the metal frame is bonded to a rear surface of the semiconductor element.SOLUTION: A manufacturing method for a semiconductor device that divides a single semiconductor wafer 10 into multiple semiconductor elements comprises: a surface processing step of performing processing according to each semiconductor element on the surface of the semiconductor wafer 10; a metal frame bonding step of bonding a metal frame 3 to the entire rear surface of the semiconductor wafer 10 via a bonding film 4; and a dicing step of dicing the semiconductor wafer 10 along with the metal frame 3 to separate it according to the semiconductor element. The bonding film 4 is bonded to the metal frame 3 through a eutectic reaction and includes indium, tin, silver, copper, and dopant from group 13 elements or group 15 elements.SELECTED DRAWING: Figure 4

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