Semiconductor device and vehicle

Abstract

To provide a semiconductor device and a vehicle capable of promoting thermal dissipation.SOLUTION: A semiconductor device A1 includes: a heat exchange base material 1; a semiconductor element mounted on the heat exchange base material 1; and a sealing resin 7 covering a part of the heat exchange base material 1 and the semiconductor element. The heat exchange base material 1 includes an outer shell portion 1a and a space portion 1c sealed by the outer shell portion 1a, and a covered portion 11 covered with the sealing resin 7 and an exposed portion 12 exposed from the sealing resin 7, each including a working fluid 15 sealed with the space portion 1c. As the working fluid 15 moves between the covered portion 11 and the exposed portion 12, heat absorbed in the covered portion 11 is dissipated from the exposed portion 12.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and a vehicle. [Background technology]

[0002] A conventional semiconductor device is disclosed in Patent Document 1. The semiconductor device described in Patent Document 1 includes a semiconductor element and a sealing resin. The sealing resin covers the semiconductor element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Republished Publication No. 2020 / 105476

[0004] [overview] It is preferable that heat generated in a semiconductor element be quickly dissipated to the outside.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device and a vehicle that are capable of promoting heat dissipation.

[0006] A semiconductor device provided by a first aspect of the present disclosure comprises a heat exchange substrate, a semiconductor element mounted on the heat exchange substrate, and a sealing resin covering a portion of the heat exchange substrate and the semiconductor element, wherein the heat exchange substrate includes an outer shell portion, a space portion sealed by the outer shell portion, and a working fluid sealed in the space portion, and has a covering portion covered by the sealing resin and an exposed portion exposed from the sealing resin, and the working fluid moves between the covering portion and the exposed portion, thereby releasing heat absorbed in the covering portion from the exposed portion.

[0007] A vehicle provided by a second aspect of the present disclosure includes a drive source and the semiconductor device provided by the first aspect of the present disclosure, the semiconductor device being electrically connected to the drive source.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Diagram 3] FIG. 3 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a partial bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Diagram 5] FIG. 5 is a front view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 10] FIG. 10 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 11] FIG. 11 is a circuit diagram showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 12] FIG. 12 is a configuration diagram showing a vehicle on which the semiconductor device according to the first embodiment of the present disclosure is mounted. [Figure 13] FIG. 13 is a plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 14] FIG. 14 is a partial plan view showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 15] FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG.

[0010] [Detailed Description] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used merely for identification purposes and are not intended to impose any ordering on their objects.

[0012] In this disclosure, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B in contact with a certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B". Furthermore, unless otherwise specified, "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in this disclosure, "a surface A faces (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] First Embodiment 1 to 11 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a heat exchanger substrate 1, a semiconductor element, and a sealing resin 7. The semiconductor device A1 of this embodiment includes a plurality of semiconductor elements. The plurality of semiconductor elements may include one or more first semiconductor elements 4 and one or more second semiconductor elements 5. In this example, the semiconductor device A1 includes a plurality of first semiconductor elements 4 and a plurality of second semiconductor elements 5, but the number of each of the first semiconductor elements 4 and the second semiconductor elements 5 is not limited in any way. The semiconductor device A1 may also include a positive terminal 81, a negative terminal 82, an output terminal 83, a first gate terminal 84, and a second gate terminal 85. As in the illustrated example, the semiconductor device A1 may also include one or more control terminals 86 and one or more control terminals 87.

[0014] In these figures, the thickness direction of the present disclosure is defined as the thickness direction z. The first side of the thickness direction z is referred to as the z1 side, and the second side opposite the first side of the z direction is referred to as the z2 side. A direction perpendicular to the thickness direction z is defined as the first direction x. The first side of the first direction x is referred to as the x1 side, and the second side opposite the x1 side is referred to as the x2 side. A direction perpendicular to the thickness direction z and the first direction x is defined as the second direction y. The first side of the second direction y is referred to as the y1 side, and the second side opposite the y1 side is referred to as the y2 side.

[0015] There is no limitation on the specific use of the semiconductor device A1. In the semiconductor device A1, the first semiconductor element 4 constitutes an upper arm circuit, and the second semiconductor element 5 constitutes a lower arm circuit, thereby forming a half-bridge circuit. The semiconductor device A1 constitutes, for example, an inverter for converting DC power into AC power and supplying power to a drive source such as a motor. The semiconductor device A1 of this embodiment will be described taking the case where it has one half-bridge circuit as an example, but it may also be configured to have, for example, three half-bridge circuits and supply power to a so-called three-phase AC motor.

[0016] The heat exchange substrate 1 is for dissipating heat generated from the first semiconductor element 4 and the second semiconductor element 5 to the outside, and an example of such a substrate is sometimes called a heat pipe. As shown in Figs. 6 to 10, the heat exchange substrate 1 includes an outer shell portion 1a, a porous portion 1b, a space portion 1c, and a working fluid 15.

[0017] The outer shell 1a includes a metal, such as Cu (copper), Ni (nickel), Fe (iron), or an alloy thereof. The outer shell 1a is a portion including the outer surface of the heat exchange substrate 1. The space 1c is a space sealed by the outer shell 1a. The porous portion 1b is interposed between the outer shell 1a and the space 1c, and is a porous portion. The material of the porous portion 1b may be the same as that of the outer shell 1a. The working fluid 15 is sealed in the space 1c, and various volatile liquids are appropriately selected.

[0018] 1 to 8, the heat exchange substrate 1 has a covered portion 11 and an exposed portion 12. The covered portion 11 is a portion covered with the sealing resin 7. The exposed portion 12 is a portion protruding from the sealing resin 7. The heat exchange substrate 1 releases heat absorbed in the covered portion 11 from the exposed portion 12.

[0019] There is no limitation on the shape and size of the covering portion 11 and the exposed portion 12. In this embodiment, the covering portion 11 has a main surface 111 and a back surface 112. The main surface 111 is a surface facing the z1 side in the thickness direction z. The back surface 112 is a surface facing the z2 side in the thickness direction z.

[0020] Each of the first semiconductor element 4 and the second semiconductor element 5 is made of a semiconductor material mainly made of SiC (silicon carbide). The semiconductor material is not limited to SiC, and may be Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride). In the present embodiment, the first semiconductor element 4 and the second semiconductor element 5 are MOSFETs. The first semiconductor element 4 and the second semiconductor element 5 are not limited to MOSFETs, and may be field effect transistors including MISFETs (Metal-Insulator-Semiconductor FETs), bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors), IC chips such as LSIs, diodes, and capacitors. In the present embodiment, the first semiconductor element 4 and the second semiconductor element 5 are both the same element and are n-channel MOSFETs. The first semiconductor element 4 and the second semiconductor element 5 are rectangular when viewed in the z direction (hereinafter also referred to as "planar view"), but are not limited thereto.

[0021] 9, the first semiconductor element 4 has a first electrode 41, a second electrode 42, and a third electrode 43. The first electrode 41 is disposed on the z1 side in the thickness direction z, and in this embodiment, it is a drain electrode. The second electrode 42 is disposed on the z2 side in the thickness direction z, and in this embodiment, it is a source electrode. The bonding material 59 is disposed on the z2 side in the thickness direction z, and in this embodiment, it is a gate electrode.

[0022] In this embodiment, the second electrode 42 is conductively joined to the main surface 111. The specific form of this conductive joining is not limited in any way. In the illustrated example, the second electrode 42 is conductively joined to the main surface 111 via an intermediate member 45.

[0023] The intermediate member 45 includes, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. The joining form between the intermediate member 45 and the main surface 111 is not limited in any way. This conductive joining may be realized, for example, via a conductive joining material (not shown), may be realized by a technique such as welding, may be realized by solid-phase diffusion bonding, or the intermediate member 45 and the covering portion 11 may be integrally formed.

[0024] There is no limitation on the form of conductive bonding between the second electrode 42 and the intermediate member 45. In the illustrated example, the second electrode 42 and the intermediate member 45 are conductively bonded via a bonding material 49. The bonding material 49 may be, for example, solder, Ag (silver) paste, a metal sintered material, or the like.

[0025] In this embodiment, the multiple first semiconductor elements 4 are arranged along the second direction y, but the arrangement of the multiple first semiconductor elements 4 is not limited in any way.

[0026] 10, the second semiconductor element 5 has a fourth electrode 51, a fifth electrode 52, and a sixth electrode 53. The fourth electrode 51 is disposed on the z1 side in the thickness direction z, and in this embodiment, it is a drain electrode. The fifth electrode 52 is disposed on the z2 side in the thickness direction z, and in this embodiment, it is a source electrode. The bonding material 59 is disposed on the z2 side in the thickness direction z, and in this embodiment, it is a gate electrode.

[0027] In this embodiment, the fourth electrode 51 is conductively joined to the rear surface 112. The specific aspect of this conductive joining is not limited in any way. In the illustrated example, the fourth electrode 51 is conductively joined to the rear surface 112 via a joining material 59. The joining material 59 may be, for example, solder, Ag (silver) paste, a metal sintered material, or the like.

[0028] In the present embodiment, the multiple second semiconductor elements 5 are arranged along the second direction y, but the arrangement of the multiple second semiconductor elements 5 is not limited in any way.

[0029] 1 to 10, the sealing resin 7 covers a covering portion 11 that is a part of the heat exchanger substrate 1, the plurality of first semiconductor elements 4, and the plurality of second semiconductor elements 5. In this embodiment, the sealing resin 7 also covers a portion of each of the positive electrode terminal 81, the negative electrode terminal 82, the output terminal 83, the first gate terminal 84, the second gate terminal 85, the plurality of control terminals 86, and the plurality of control terminals 87.

[0030] The material of the sealing resin 7 is insulating and includes, for example, epoxy resin. The shape of the sealing resin 7 is not limited in any way, and in the illustrated example, the sealing resin 7 has a first resin surface 71, a second resin surface 72, a third resin surface 73, a fourth resin surface 74, a fifth resin surface 75, and a sixth resin surface 76.

[0031] The resin first surface 71 is a surface facing the z1 side in the thickness direction z. The resin second surface 72 is a surface facing the z2 side in the thickness direction z. The resin third surface 73 is a surface facing the x1 side in the first direction x. The resin fourth surface 74 is a surface facing the x2 side in the first direction x. The resin fifth surface 75 is a surface facing the y1 side in the second direction y. The resin sixth surface 76 is a surface facing the y2 side in the second direction y.

[0032] 2, 4, 6, and 9, the positive electrode terminal 81 is electrically connected to the first electrode 41. In this embodiment, the positive electrode terminal 81 has a terminal portion 811, a plurality of connection portions 812, and a relay portion 813.

[0033] The terminal portion 811 is a portion protruding from the sealing resin 7. In the illustrated example, the terminal portion 811 protrudes from the third resin surface 73 of the sealing resin 7 toward the x1 side in the first direction x. The terminal portion 811 is used when the semiconductor device A1 is mounted on a vehicle B1 (to be described later) or the like.

[0034] The connection portion 812 is a portion electrically connected to the first electrode 41, and is covered with the sealing resin 7. In the present embodiment, the positive electrode terminal 81 has a plurality of connection portions 812, the number of which is the same as the number of the plurality of first semiconductor elements 4. The connection portion 812 in the present embodiment is conductively joined to the first electrode 41 via the bonding material 49.

[0035] The relay portion 813 is a portion interposed between the terminal portion 811 and the multiple connection portions 812. The relay portion 813 is covered with the sealing resin 7. The relay portion 813 is spaced from the main surface 111 on the z1 side in the thickness direction z.

[0036] 1, 3, 8, and 10, the negative electrode terminal 82 is electrically connected to the fifth electrode 52. In the present embodiment, the negative electrode terminal 82 has a terminal portion 821, a plurality of connection portions 822, and a relay portion 823.

[0037] The terminal portion 821 is a portion protruding from the sealing resin 7. In the illustrated example, the terminal portion 821 protrudes from the third resin surface 73 of the sealing resin 7 toward the x1 side in the first direction x. The terminal portion 821 is located on the y1 side in the second direction y with respect to the terminal portion 811. The terminal portion 821 is used when the semiconductor device A1 is mounted on a vehicle B1 (to be described later) or the like.

[0038] The connection portion 822 is a portion electrically connected to the fifth electrode 52, and is covered with the sealing resin 7. In the present embodiment, the negative electrode terminal 82 has a plurality of connection portions 822, the number of which is the same as the number of the second semiconductor elements 5. The connection portion 822 in the present embodiment is conductively joined to the fifth electrode 52 via a bonding material 59.

[0039] The relay portion 823 is a portion interposed between the terminal portion 821 and the multiple connection portions 822. The relay portion 823 is covered with the sealing resin 7. The relay portion 823 is spaced from the rear surface 112 on the z2 side in the thickness direction z.

[0040] 1 to 5 and 7, the output terminals 83 are electrically connected to the heat exchanger substrate 1. In this embodiment, the semiconductor device A1 has two output terminals 83. Each output terminal 83 has a terminal portion 831 and a connection portion 832.

[0041] The terminal portion 831 is a portion protruding from the sealing resin 7. In the illustrated example, the terminal portion 831 protrudes from the third resin surface 73 of the sealing resin 7 toward the x1 side in the first direction x. The terminal portion 831 is located between the terminal portion 811 and the terminal portion 821 in the second direction y. The terminal portion 831 is used when the semiconductor device A1 is mounted on a vehicle B1 (to be described later) or the like.

[0042] The connection portion 832 is conductively joined to the coating portion 11. A terminal portion 831 of one output terminal 83 is conductively joined to the main surface 111. A terminal portion 831 of the other output terminal 83 is conductively joined to the back surface 112. The conductive joining between the connection portion 832 and the coating portion 11 may be realized, for example, via a conductive joining material not shown, or may be realized by a technique such as welding, or may be realized by solid-state diffusion bonding, or the output terminal 83 and the coating portion 11 may be formed integrally.

[0043] The semiconductor device A1 may be configured to include only one of the output terminals 83, or may be configured to include three or more output terminals 83.

[0044] 2, 4, 6, and 9, the first gate terminal 84 is electrically connected to the third electrode 43. In the present embodiment, the first gate terminal 84 has a terminal portion 841, a plurality of connection portions 842, and a relay portion 843.

[0045] The terminal portion 841 is a portion protruding from the sealing resin 7. In the illustrated example, the terminal portion 841 protrudes from the fourth resin surface 74 of the sealing resin 7 toward the x2 side in the first direction x. The terminal portion 841 has a portion extending from the fourth resin surface 74 toward the x2 side in the first direction x, and a portion extending from the portion toward the z2 side in the thickness direction z. In the illustrated example, the terminal portion 841 is located on the y2 side in the second direction y with respect to the exposed portion 12. The terminal portion 841 is used when the semiconductor device A1 is mounted on a vehicle B1, which will be described later, or the like.

[0046] The connection portion 842 is a portion electrically connected to the third electrode 43, and is covered with the sealing resin 7. In the present embodiment, the first gate terminal 84 has a plurality of connection portions 842, the number of which is the same as the number of the plurality of first semiconductor elements 4. The connection portion 842 in the present embodiment is conductively joined to the third electrode 43 via a bonding material 49.

[0047] Moreover, in this embodiment, the semiconductor device A1 has an insulating member 89. The insulating member 89 is made of an insulating material, for example, resin. The insulating member 89 is interposed between the first gate terminal 84 and the main surface 111, and insulates the first gate terminal 84 from the heat exchanger substrate 1. It is preferable that the size in the thickness direction z of the intermediate member 45 is equal to or larger than the sum of the size in the thickness direction z of the connection portion 842 and the size in the thickness direction z of the insulating member 89.

[0048] The relay portion 843 is a portion interposed between the terminal portion 841 and the multiple connection portions 842. The relay portion 843 is covered with the sealing resin 7. The relay portion 843 is spaced from the main surface 111 on the z1 side in the thickness direction z.

[0049] Furthermore, the semiconductor device A1 may include one or more control terminals 86. Examples of the one or more control terminals 86 include a source sense terminal that is electrically connected to the second electrode 42, a temperature detection terminal that is electrically connected to a thermistor or thermocouple (not shown), and the like.

[0050] 1, 3, 8, and 10, the second gate terminal 85 is electrically connected to the sixth electrode 53. In this embodiment, the second gate terminal 85 has a terminal portion 851, a plurality of connection portions 852, and a relay portion 853.

[0051] The terminal portion 851 is a portion protruding from the sealing resin 7. In the illustrated example, the terminal portion 851 protrudes from the fourth resin surface 74 of the sealing resin 7 toward the x2 side in the first direction x. The terminal portion 851 has a portion extending from the fourth resin surface 74 toward the x2 side in the first direction x, and a portion extending from the portion toward the z2 side in the thickness direction z. In the illustrated example, the terminal portion 851 is located on the y1 side in the second direction y with respect to the exposed portion 12. The terminal portion 851 is used when the semiconductor device A1 is mounted on a vehicle B1, which will be described later, or the like.

[0052] The connection portion 852 is a portion electrically connected to the sixth electrode 53, and is covered with the sealing resin 7. In the present embodiment, the second gate terminal 85 has a plurality of connection portions 852, the number of which is the same as the number of the second semiconductor elements 5. The connection portion 852 in the present embodiment is conductively joined to the sixth electrode 53 via a bonding material 59.

[0053] The relay portion 853 is a portion interposed between the terminal portion 851 and the multiple connection portions 852. The relay portion 853 is covered with the sealing resin 7. The relay portion 853 is spaced from the rear surface 112 on the z2 side in the thickness direction z.

[0054] Furthermore, the semiconductor device A1 may include one or more control terminals 87. Examples of the one or more control terminals 87 include a source sense terminal that is electrically connected to the fifth electrode 52, and a temperature detection terminal that is electrically connected to a thermistor or thermocouple (not shown).

[0055] 11 is a circuit diagram showing a semiconductor device A1. As shown in the figure, a first semiconductor element 4 constitutes an upper arm circuit, and a second semiconductor element 5 constitutes a lower arm circuit. A positive terminal 81 and a negative terminal 82 are terminals to which DC power is input. An output terminal 83 is a terminal connected to a drive source or the like to which AC power is supplied. A control signal for controlling the first semiconductor element 4 is input to a first gate terminal 84. A control signal for controlling the second semiconductor element 5 is input to a second gate terminal 85.

[0056] Next, a vehicle B1 equipped with the semiconductor device A1 will be described with reference to Fig. 12. The vehicle B1 is, for example, an electric vehicle (EV).

[0057] As shown in Fig. 12, the vehicle B1 includes an on-board charger 91, a storage battery 92, and a drive system 93. Power is supplied to the on-board charger 91 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, the power supply means from the power supply facility to the on-board charger 91 may be wired. The on-board charger 91 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 91 is stepped up by the converter and then supplied to the storage battery 92. The stepped-up voltage is, for example, 600V.

[0058] The drive system 93 drives the vehicle B1. The drive system 93 has an inverter 931 and a drive source 932. The semiconductor device A1 constitutes a part of the inverter 931. The power stored in the storage battery 92 is supplied to the inverter 931. The power supplied from the storage battery 92 to the inverter 931 is DC power. In addition, unlike the power system shown in FIG. 12, a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931. The inverter 931 converts DC power into AC power. The inverter 931 including the semiconductor device A1 is electrically connected to the drive source 932.

[0059] The driving source 932 has an AC motor and a transmission. When the AC power converted by the inverter 931 is supplied to the driving source 932, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B1. This drives the vehicle B1. To drive the vehicle B1, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. The semiconductor device A1 in the inverter 931 is necessary to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0060] Next, the operation of the semiconductor device A1 and the vehicle B1 will be described.

[0061] 7, a heat sink Hs is attached to the exposed portion 12. The heat sink Hs is, for example, a component of a vehicle B1. In this embodiment, the heat exchanger substrate 1 is electrically connected to an output terminal 83. For this reason, an insulating member 19 is provided between the heat sink Hs and the exposed portion 12. The insulating member 19 is, for example, a resin, a ceramic, an insulating tape, or the like.

[0062] 7, in the heat exchange substrate 1, a part of the working fluid 15 sealed in the space 1c is absorbed into the porous portion 1b by, for example, capillary action. When the first semiconductor element 4 and the second semiconductor element 5 generate heat, the heat is transferred to the covering portion 11. This heat is transferred to the working fluid 15 absorbed in the porous portion 1b via the outer shell portion 1a. As a result, when the working fluid 15 evaporates, the heat from the first semiconductor element 4 and the second semiconductor element 5 is further absorbed by the absorption of latent heat.

[0063] The evaporated working liquid 15 gas moves to the exposed portion 12 through the space 1c. Meanwhile, when the working liquid 15 evaporates in the porous portion 1b of the covering portion 11, the working liquid 15 absorbed in the porous portion 1b of the exposed portion 12 moves to the porous portion 1b of the covering portion 11 by capillary action. The working liquid 15 gas that has moved to the exposed portion 12 is cooled by heat absorption by the heat sink Hs, etc., and condenses. At this time, heat is released from the working liquid 15 to the heat sink Hs due to the release of latent heat. Meanwhile, the working liquid 15 that has moved to the porous portion 1b of the covering portion 11 evaporates due to the heat from the first semiconductor element 4 and the second semiconductor element 5.

[0064] In this manner, the working fluid 15 sealed in the heat exchange substrate 1 continuously evaporates in the covered portion 11 and continuously condenses in the exposed portion 12. This causes absorption and release of latent heat, and the heat from the first semiconductor element 4 and the second semiconductor element 5 is released to the heat sink Hs. Therefore, according to this embodiment, it is possible to promote heat dissipation from the semiconductor device A1.

[0065] 1, the positive electrode terminal 81, the negative electrode terminal 82, and the output terminal 83 protrude in the x1 direction in the first direction x, and the exposed portion 12, the first gate terminal 84, and the second gate terminal 85 protrude in the x2 direction in the first direction x. None of the terminals protrude in the second direction y of the sealing resin 7. Therefore, when mounting a plurality of semiconductor devices A1 on a vehicle B1, etc., it is possible to arrange the plurality of semiconductor devices A1 in the second direction y.

[0066] The exposed portion 12 protrudes toward the x2 side in the first direction x further than the first gate terminal 84, the second gate terminal 85, etc. This makes it possible to suppress interference between the first gate terminal 84, the second gate terminal 85, etc. and the heat sink Hs, as shown in FIG.

[0067] 9 and 10, the second electrode 42 of the first semiconductor element 4 and the fourth electrode 51 of the second semiconductor element 5 are conductively joined to the heat exchanger substrate 1. This allows heat from the first semiconductor element 4 and the second semiconductor element 5 to be transferred to the heat exchanger substrate 1 more quickly, which is preferable for promoting heat dissipation of the semiconductor device A1.

[0068] The first semiconductor element 4 is mounted on the main surface 111, and the second semiconductor element 5 is mounted on the back surface 112. This makes it possible to arrange the first semiconductor element 4 and the second semiconductor element 5 in a positional relationship in which they overlap each other when viewed in the thickness direction z. This makes it possible to miniaturize the semiconductor device A1.

[0069] 13 to 17 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-mentioned embodiment are given the same reference numerals as those in the above-mentioned embodiment. In addition, the configurations of the parts in each modified example and each embodiment can be appropriately combined with each other as long as no technical contradiction occurs.

[0070] <First Modification of First Embodiment> 13 shows a first modified example of the semiconductor device A1. The semiconductor device A11 of this modified example differs from the semiconductor device A1 in the configuration of the heat exchange substrate 1.

[0071] In this modification, the heat exchange substrate 1 has two exposed portions 12. One exposed portion 12 protrudes from a fifth resin surface 75 of the sealing resin 7 to the y1 side in the second direction y. The other exposed portion 12 protrudes from a sixth resin surface 76 of the sealing resin 7 to the y2 side in the second direction y.

[0072] This modification also promotes heat dissipation from the semiconductor device A11. Moreover, the exposed portion 12 protrudes in a direction different from any of the positive terminal 81, the negative terminal 82, the output terminal 83, the first gate terminal 84, and the second gate terminal 85. This has the advantage that, when the above-mentioned heat sink Hs is brought into contact with the exposed portion 12, it is easy to avoid interference between the heat sink Hs and any of the positive terminal 81, the negative terminal 82, the output terminal 83, the first gate terminal 84, and the second gate terminal 85. As can be understood from this modification, the specific configuration of the exposed portion 12 is not limited in any way.

[0073] <Second embodiment> 14 to 17 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment includes an insulating layer 61. In addition, the semiconductor device A2 uses an insulating substrate 6 having the insulating layer 61.

[0074] The insulating substrate 6 is interposed between the first and second semiconductor elements 4 and 5 and the heat exchange substrate 1, and insulates the first and second semiconductor elements 4 and 5 from the heat exchange substrate 1. For this reason, the heat exchange substrate 1 of this embodiment is not electrically connected to any of the positive electrode terminal 81, the negative electrode terminal 82, the output terminal 83, the first gate terminal 84, and the second gate terminal 85.

[0075] The insulating substrate 6 has an insulating layer 61, a first metal layer 62, and a second metal layer 63. The insulating layer 61 has insulating properties and is made of, for example, ceramic. The first metal layer 62 is laminated on the z2 side of the insulating layer 61 in the thickness direction z, and contains, for example, a metal such as copper (Cu) or an alloy. The second metal layer 63 is laminated on the z1 side of the insulating layer 61 in the thickness direction z, and contains, for example, a metal such as copper (Cu) or an alloy.

[0076] In this embodiment, the second metal layer 63 is bonded to the main surface 111. The method of bonding the second metal layer 63 to the main surface 111 is not limited in any way, and may be realized, for example, via a conductive bonding material (not shown), may be realized by a method such as welding, may be realized by solid-state diffusion bonding, or the second metal layer 63 and the covering portion 11 may be formed integrally.

[0077] In the present embodiment, the second electrode 42 and the fourth electrode 51 are electrically connected to the first metal layer 62. The second electrode 42 may be electrically connected to the first metal layer 62 via an intermediate member 45. The fourth electrode 51 may be electrically connected to the first metal layer 62 via a bonding material 59.

[0078] The output terminal 83 is conductively joined to the first metal layer 62. The method of joining the connection portion 832 and the first metal layer 62 is not limited in any way, and may be realized, for example, via a conductive joining material (not shown), may be realized by a method such as welding, may be realized by solid-state diffusion bonding, or the output terminal 83 and the first metal layer 62 may be formed integrally.

[0079] This embodiment also promotes heat dissipation from the semiconductor device A2. The heat exchanger substrate 1 is not electrically connected to the first semiconductor element 4, the second semiconductor element 5, the positive electrode terminal 81, the negative electrode terminal 82, the output terminal 83, the first gate terminal 84, and the second gate terminal 85. Therefore, for example, as shown in FIG. 16, the exposed portion 12 and the heat sink Hs can be directly abutted against each other without using an insulating member or the like.

[0080] The semiconductor device and vehicle according to the present disclosure are not limited to the above-described embodiment. The specific configurations of the components of the semiconductor device and vehicle according to the present disclosure can be freely designed in various ways.

[0081] [Appendix 1] A heat exchange substrate; A semiconductor element mounted on the heat exchange substrate; a sealing resin that covers a portion of the heat exchange base material and the semiconductor element, The heat exchange substrate includes an outer shell portion, a space portion sealed by the outer shell portion, and a working fluid sealed in the space portion, and has a covering portion covered by the sealing resin and an exposed portion exposed from the sealing resin, and the working fluid moves between the covering portion and the exposed portion, thereby releasing heat absorbed in the covering portion from the exposed portion. [Appendix 2] A plurality of the semiconductor elements are provided, the plurality of semiconductor elements include a first semiconductor element and a second semiconductor element; the first semiconductor element constitutes an upper arm circuit, 2. The semiconductor device according to claim 1, wherein the second semiconductor element constitutes a lower arm circuit. [Appendix 3] the first semiconductor element has a first electrode and a second electrode arranged on opposite sides to each other in a thickness direction, and a third electrode to which a control signal for controlling a current flowing through the first electrode and the second electrode is input; The semiconductor device described in Appendix 2, wherein the second semiconductor element has a fourth electrode and a fifth electrode arranged opposite each other in the thickness direction, and a sixth electrode to which a control signal is input to control a current flowing through the fourth electrode and the fifth electrode. [Appendix 4] the first electrode is a drain electrode, the second electrode is a source electrode, the third electrode is a gate electrode, the fourth electrode is a drain electrode, the fifth electrode is a source electrode, The semiconductor device according to claim 3, wherein the sixth electrode is a gate electrode. [Appendix 5] The semiconductor device according to claim 4, wherein the second electrode and the fourth electrode are conductively joined to the heat exchanger substrate. [Appendix 6] the covering portion has a main surface and a back surface positioned opposite to each other in the thickness direction, The semiconductor device according to claim 5, wherein the second electrode and the fourth electrode are conductively joined to the main surface. [Appendix 7] The semiconductor device according to claim 4, further comprising an insulating layer interposed between the first semiconductor element and the heat exchange substrate, and between the second semiconductor element and the heat exchange substrate. [Appendix 8] an insulating substrate having the insulating layer and a first metal layer laminated on the insulating layer on the opposite side to the heat exchange substrate; The semiconductor device according to claim 7, wherein the second electrode and the fourth electrode are conductively joined to the first metal layer. [Appendix 9] 9. The semiconductor device according to claim 8, wherein the insulating substrate further includes a second metal layer interposed between the insulating layer and the heat exchanger substrate. [Appendix 10] 10. The semiconductor device according to claim 5, further comprising a positive electrode terminal that is electrically connected to the first electrode and has a portion that protrudes from the sealing resin. [Appendix 11] The semiconductor device according to claim 10, further comprising a negative electrode terminal in electrical communication with the fifth electrode and having a portion protruding from the sealing resin. [Appendix 12] 12. The semiconductor device according to claim 11, further comprising an output terminal that is electrically connected to the heat exchange substrate and has a portion that protrudes from the sealing resin. [Appendix 13] a first gate terminal that is electrically connected to the third electrode and has a portion that protrudes from the sealing resin; 13. The semiconductor device according to claim 12, further comprising: a second gate terminal in electrical communication with the sixth electrode and having a portion protruding from the sealing resin. [Appendix 14] 14. The semiconductor device according to claim 13, wherein the positive electrode terminal, the negative electrode terminal, the output terminal, the first gate terminal, and the second gate terminal protrude in different directions from the sealing resin. [Appendix 15] 15. The semiconductor device according to claim 14, wherein the first and second gate terminals and the exposed portion protrude in the same direction from the sealing resin. [Appendix 16] A driving source; A semiconductor device according to any one of claims 1 to 15, The semiconductor device is electrically connected to the drive source. [Explanation of symbols]

[0082] A1, A11, A2: Semiconductor device B1: Vehicle 1: Heat exchange base material 1a: Outer shell 1b: Porous part 1c: Space part 4: First semiconductor element 5: Second semiconductor element 6: Insulating substrate 7: Sealing resin 11: Covering part 12:Exposed part 15: Hydraulic fluid 19: Insulating material 41: 1st electrode 42: 2nd electrode 43:Third electrode 45: Intermediate part 49: Bonding material 51: 4th electrode 52: 5th electrode 53: 6th electrode 59: Bonding material 61: Insulating layer 62: 1st metal layer 63: 2nd metal layer 71:Resin first side 72:Resin second side 73:Resin 3rd side 74:Resin 4th side 75:Resin 5th side 76:Resin 6th side 81: Positive terminal 82: Negative terminal 83: Output terminal 84: First gate terminal 85: Second gate terminal 86: Control terminal 87: Control terminal 89: Insulating materials 91: Vehicle charger 92: Battery 93: Drive system 111: Main surface 112: Back side 811:Terminal section 812: Connection 813: Relay section 821:Terminal section 822: Connection 823: Relay section 831:Terminal section 832: Connection 841:Terminal section 842: Connection 843: Relay section 851:Terminal section 852: Connection 853: Relay department 931: Inverter 932: Power source Hs: Heat sink x :1st direction y : second direction z: thickness direction

Claims

1. A heat exchange substrate; A semiconductor element mounted on the heat exchange substrate; a sealing resin that covers a portion of the heat exchange base material and the semiconductor element, The heat exchange substrate includes an outer shell portion, a space portion sealed by the outer shell portion, and a working fluid sealed in the space portion, and has a covering portion covered by the sealing resin and an exposed portion exposed from the sealing resin, and the working fluid moves between the covering portion and the exposed portion, thereby releasing heat absorbed in the covering portion from the exposed portion.

2. A plurality of the semiconductor elements are provided, the plurality of semiconductor elements include a first semiconductor element and a second semiconductor element; the first semiconductor element constitutes an upper arm circuit, The semiconductor device according to claim 1 , wherein the second semiconductor element constitutes a lower arm circuit.

3. the first semiconductor element has a first electrode and a second electrode arranged on opposite sides to each other in a thickness direction, and a third electrode to which a control signal for controlling a current flowing through the first electrode and the second electrode is input; 3. The semiconductor device according to claim 2, wherein the second semiconductor element has a fourth electrode and a fifth electrode arranged opposite each other in the thickness direction, and a sixth electrode to which a control signal is input to control a current flowing through the fourth electrode and the fifth electrode.

4. the first electrode is a drain electrode, the second electrode is a source electrode, the third electrode is a gate electrode, the fourth electrode is a drain electrode, the fifth electrode is a source electrode; The semiconductor device according to claim 3 , wherein said sixth electrode is a gate electrode.

5. The semiconductor device according to claim 4 , wherein the second electrode and the fourth electrode are conductively joined to the heat exchanger substrate.

6. the covering portion has a main surface and a back surface positioned opposite to each other in the thickness direction, The semiconductor device according to claim 5 , wherein the second electrode and the fourth electrode are conductively joined to the main surface.

7. The semiconductor device according to claim 4 , further comprising an insulating layer interposed between the first semiconductor element and the heat exchange substrate, and between the second semiconductor element and the heat exchange substrate.

8. an insulating substrate having the insulating layer and a first metal layer laminated on the insulating layer on the opposite side to the heat exchange substrate; The semiconductor device according to claim 7 , wherein the second electrode and the fourth electrode are conductively joined to the first metal layer.

9. The semiconductor device according to claim 8 , wherein the insulating substrate further comprises a second metal layer interposed between the insulating layer and the heat exchanger substrate.

10. 10. The semiconductor device according to claim 5, further comprising a positive electrode terminal electrically connected to said first electrode and having a portion protruding from said sealing resin.

11. The semiconductor device according to claim 10 , further comprising a negative electrode terminal that is electrically connected to the fifth electrode and has a portion that protrudes from the sealing resin.

12. The semiconductor device according to claim 11 , further comprising an output terminal that is electrically connected to the heat exchange substrate and has a portion that protrudes from the sealing resin.

13. a first gate terminal that is electrically connected to the third electrode and has a portion that protrudes from the sealing resin; The semiconductor device according to claim 12 , further comprising: a second gate terminal electrically connected to said sixth electrode and having a portion protruding from said sealing resin.

14. The semiconductor device according to claim 13 , wherein the positive electrode terminal, the negative electrode terminal, the output terminal, the first gate terminal, and the second gate terminal protrude in different directions from the sealing resin.

15. The semiconductor device according to claim 14 , wherein the first and second gate terminals and the exposed portion protrude in the same direction from the sealing resin.

16. A driving source; The semiconductor device according to claim 1, The semiconductor device is electrically connected to the drive source.

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