Sensor

Abstract

To provide a sensor capable of improving performances.SOLUTION: A sensor includes a sensor part and a circuit part. The sensor part includes: a first element part containing a first resistive element and a first conductive member; and a second element part containing a second resistive element. The circuit part includes a detection part and a control part. The circuit part can perform a first operation. In the first operation, the control part can control first electric power on the basis of a second signal corresponding to second resistance of the second resistive element. In the first operation, the control part can supply the first electric power to the first conductive member to increase a first temperature of the first element part. In the first operation, the detection part can output a detection value corresponding to a difference between a first signal corresponding to first resistance of the first resistive element in a first state where the first temperature is increased and the second signal.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE The present invention relates to a sensor. [Background technology]

[0002] For example, there are sensors using MEMS (Micro Electro Mechanical Systems) elements, etc. It is desirable to improve the characteristics of sensors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-188341 A Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide a sensor that allows for improved performance. [Means for solving the problem]

[0005] According to an embodiment, a sensor includes a sensor unit and a circuit unit. The sensor unit includes a first element unit including a first resistive element and a first conductive member, and a second element unit including a second resistive element. The circuit unit includes a detection unit and a control unit. The circuit unit is capable of performing a first operation. The control unit is capable of controlling a first power based on a second signal corresponding to a second resistance of the second resistive element in the first operation. The control unit is capable of supplying the first power to the first conductive member in the first operation to increase a first temperature of the first element unit. The detection unit is capable of outputting a detection value corresponding to a difference between a first signal corresponding to the first resistance of the first resistive element in a first state in which the first temperature has increased and the second signal in the first operation. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a block diagram illustrating a sensor according to the first embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Diagram 3] FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 4] FIG. 4 is a schematic plan view illustrating the sensor according to the first embodiment. [Diagram 5] 5(a) to 5(e) are schematic views illustrating the operation of the sensor according to the first embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 7] FIG. 7 is a block diagram illustrating a sensor according to the second embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the second embodiment. As shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a block diagram illustrating a sensor according to the first embodiment. As shown in FIG. 1, a sensor 110 according to the embodiment includes a sensor section 10S and a circuit section .

[0009] The sensor unit 10S includes a first element unit 11E and a second element unit 12E. The first element unit 11E includes a first resistance element 11 and a first conductive member 21. The second element unit 12E includes a second resistance element 12. As described below, the second element unit 12E may include a second conductive member 22. The first element unit 11E is included in the first detection element 10A. The second element unit 12E is included in the second detection element 10B.

[0010] The circuit section 70 includes a detection section 71 and a control section 72. The circuit section 70 is capable of performing a first operation. In the first operation, the control section 72 is capable of controlling the first power PW1 based on a second signal Sr2 corresponding to the second resistance of the second resistive element 12. In the first operation, the control section 72 is capable of supplying the controlled first power PW1 to the first conductive member 21 to increase the first temperature of the first element section 11E. In the first operation, the detection section 71 is capable of outputting a detection value Vout corresponding to the difference between the first signal Sr1 corresponding to the first resistance of the first resistive element 11 in a first state in which the first temperature has increased and the second signal and Sr2. The first power PW1 may be a voltage value.

[0011] The first conductive member 21 is heated by the first power PW1. The first conductive member 21 is, for example, a heater. The heat of the first conductive member 21 increases the temperature of the first element portion 11E. As a result, the temperature of the first resistor element 11 increases.

[0012] The temperature state of the first resistor element 11 corresponds to the state of the detection object around the sensor portion 10S (e.g., the first element portion 11E). The detection object is, for example, a gas. The gas is, for example, hydrogen or carbon dioxide. The thermal conduction characteristics (heat dissipation) change depending on the type and concentration of the gas. Due to the change in heat dissipation, the temperature state of the first resistor element 11 corresponds to the state of the detection object. By detecting the temperature of the first resistor element 11, the state of the detection object (such as the type and concentration of gas) can be detected. The sensor 110 is, for example, a thermal conduction type gas sensor.

[0013] In the embodiment, a difference between a first signal Sr1 corresponding to the first resistance of the first resistor element 11 and a second signal Sr2 is detected. This makes it possible to detect the detection target with higher accuracy. The second resistor element 12 is, for example, a reference element.

[0014] In this way, the first signal Sr1 changes in response to the detection target around the sensor unit 10S. On the other hand, the second signal Sr2 does not change in response to the detection target. The rate of change of the second signal Sr2 in response to the detection target is lower than the rate of change of the first signal Sr1 in response to the detection target.

[0015] In this example, a signal obtained from the first resistor element 11 is converted to a voltage by a first resistance voltage conversion circuit 71a (RVC). The voltage obtained by the conversion corresponds to a first signal Sr1. A signal obtained from the second resistor element 12 is converted to a voltage by a second resistance voltage conversion circuit 71b. The voltage obtained by the conversion corresponds to a second signal Sr2. These signals are input to a differential circuit 71D. A detection value Vout corresponding to the difference is output from the differential circuit 71D.

[0016] In the above-mentioned detection operation, a reference example in which the first power PW1 is constant can be considered. In this reference example, if the environmental temperature of the sensor unit 10S changes, for example, when a constant first power PW1 is supplied to the first conductive member 21 (heater), the temperature of the first conductive member 21 may not be the desired temperature. This may result in insufficient improvement in the accuracy of the detection result.

[0017] In the embodiment, the first power PW1 is controlled based on the detection result of the temperature of the sensor unit 10S. As shown in FIG. 1, in the case of the sensor 110, a second signal Sr2 corresponding to the second resistance of the second resistive element 12 is supplied to the control unit 72. The control unit 72 controls the first power PW1 based on the second signal Sr2. The second resistance of the second resistive element 12 depends on the environmental temperature of the sensor unit 10S. By controlling the first power PW1 using the second signal Sr2 corresponding to the second resistance of the second resistive element 12, the temperature of the first conductive member 21 can be brought to a target state with high accuracy. This makes it possible to detect the detection target with high accuracy. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0018] 1, in this example, the control unit 72 includes a driver circuit 72D and a processing circuit 73C. The driver circuit 72D can supply a first power PW1 to the first conductive member 21. The driver circuit 72D can apply a voltage corresponding to the first power PW1 to the first conductive member 21. The processing circuit 73C can control the driver circuit 72D based on the second signal Sr2 to control the first power PW1 (or voltage).

[0019] For example, the driver circuit 72D may include a circuit that generates a standard voltage. The processing circuit 73C may generate a correction voltage according to the second signal Sr2. The first power PW1 (voltage) may be controlled by adding the standard voltage and the correction voltage.

[0020] As shown in FIG. 1, in one example, the processing circuit 73C includes a processing unit 73R and a memory 73M. The memory 73M can store a relationship between a change in the second signal Sr2 and a control value for the first power PW1. For example, the memory 73M can store a table related to these relationships. For example, the memory 73M can store a function related to these relationships. The processing unit 73R can control the driver circuit 72D based on the above relationship stored in the memory 73M and the second signal Sr2 supplied to the control unit 72 (for example, the processing circuit 73C). For example, a control signal Sc1 is supplied from the processing unit 73R to the driver circuit 72D.

[0021] The second signal Sr2 obtained from the second resistor element 12 changes according to a second temperature around the sensor unit 10S. The second resistor element 12 functions as a temperature sensor. The first power PW1 changes according to the second temperature (for example, the environmental temperature).

[0022] An example of the sensor unit 10S will be described below. FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. 3 and 4 are schematic plan views illustrating the sensor according to the first embodiment. FIG. 2 is a cross-sectional view taken along line A1-A2 in FIG.

[0023] 2, the sensor unit 10S further includes a base 41. The first element unit 11E and the second element unit 12E are fixed to the base 41. By providing these element units on one base 41, when no power is supplied to the first conductive member 21, the temperatures of these element units become substantially the same. This enables detection with higher accuracy in detection using the second resistance element 12 as a reference.

[0024] The first power PW1 is controlled based on a second signal Sr2 corresponding to the second resistance of the second resistor element 12. The second element portion 12E including the second resistor element 12 is spatially close to the first element portion 11E. The first power PW1 is controlled with good spatial responsiveness. In the embodiment, the heat capacity of the first element portion 11E is small. The temperature of the first element portion 11E can be changed in a short time. The first power PW1 can be controlled with high temporal responsiveness.

[0025] 2, the base 41 may include a semiconductor substrate 41s and an insulating layer 41i. The semiconductor substrate 41s may be, for example, a silicon substrate. The insulating layer 41i is provided on the semiconductor substrate 41s. A part of the semiconductor substrate 41s may include a transistor or the like. At least a part of the circuit unit 70 may be formed by the part of the semiconductor substrate 41s.

[0026] As shown in FIG. 2, the sensor unit 10S includes a first holding portion 31aS and a second holding portion 32aS. The first holding portion 31aS and the second holding portion 32aS are fixed to a base 41. The first holding portion 31aS holds the first element portion 11E. A first gap g1 is provided between the base 41 and the first element portion 11E. The second holding portion 32aS holds the second element portion 12E. A second gap g2 is provided between the base 41 and the second element portion 12E. By providing these gaps, external influences via, for example, the base 41 are suppressed. Higher accuracy is easily obtained.

[0027] The first holding portion 31aS is included in the first detection element 10A. The second holding portion 32aS is included in the second detection element 10B. In this example, the first detection element 10A includes a first connection portion 31aC. The first connection portion 31aC connects the first element portion 11E to the first holding portion 31aS. The second detection element 10B includes a second connection portion 32aC. The second connection portion 32aC connects the second element portion 12E to the second holding portion 32aS. These connection portions may have, for example, a meandering structure. Low thermal conductivity is obtained by these connection portions. For example, the first element portion 11E can be efficiently heated.

[0028] The first element portion 11E includes a first insulating member 18A. At least a portion of the first insulating member 18A is provided between the first conductive member 21 and the first resistor element 11.

[0029] In this example, the second element portion 12E includes a second conductive member 22. For example, the configuration of the second element portion 12E is the same as the configuration of the first element portion 11E. For example, the thermal characteristics (heat capacity, etc.) of the second element portion 12E are substantially the same as the thermal characteristics (heat capacity, etc.) of the first element portion 11E. Correction with higher accuracy is possible. Power does not need to be supplied to the second conductive member 22. The second element portion 12E includes a second insulating member 18B. At least a portion of the second insulating member 18B is provided between the second conductive member 22 and the second resistor element 12.

[0030] In this example, the sensor unit 10S includes a first opposing holding portion 31bS and a second opposing holding portion 32bS. The first opposing holding portion 31bS and the second opposing holding portion 32bS are fixed to a base 41. The first opposing holding portion 31bS holds the first element unit 11E. The second opposing holding portion 32bS holds the second element unit 12E. The element unit is held more stably.

[0031] In this example, the first detection element 10A includes a first opposing connection portion 31bC. The first opposing connection portion 31bC connects the first element portion 11E to the first opposing holding portion 31bS. The second detection element 10B includes a second opposing connection portion 32bC. The second opposing connection portion 32bC connects the second element portion 12E to the second opposing holding portion 32bS.

[0032] 3, the first detection element 10A may include a first other holding portion 31cS, a first other connecting portion 31cC, a first other facing holding portion 31dS, and a first other facing connecting portion 31dC. The first other holding portion 31cS and the first other facing holding portion 31dS are fixed to a base 41. The first other connecting portion 31cC connects the first element portion 11E to the first other holding portion 31cS. The first other facing connecting portion 31dC connects the first element portion 11E to the first other facing holding portion 31dS.

[0033] 3, the second detection element 10B may include a second other holding portion 32cS, a second other connecting portion 32cC, a second other facing holding portion 32dS, and a second other facing connecting portion 32dC. The second other holding portion 32cS and the second other facing holding portion 32dS are fixed to a base 41. The second other connecting portion 32cC connects the second element portion 12E to the second other holding portion 32cS. The second other facing connecting portion 32dC connects the second element portion 12E to the second other facing holding portion 32dS.

[0034] In this example, the first resistor element 11 is electrically connected to the outside (for example, the circuit section 70) via the first connection portion 31aC and the first opposing connection portion 31bC. The first conductive member 21 is electrically connected to the outside (for example, the circuit section 70) via the first other connection portion 31cC and the first other opposing connection portion 31dC.

[0035] In this example, the second resistor element 12 is electrically connected to the outside (for example, the circuit unit 70) via the second connection portion 32aC and the second opposing connection portion 32bC. The second conductive member 22 does not need to be electrically connected to the outside (for example, the circuit unit 70).

[0036] FIG. 4 illustrates a pattern shape of a layer including the first resistor element 11 and the second resistor element 12. As shown in FIG. 4, a first film 15a and a second film 15b may be provided. The first resistor element 11 is provided between the first film 15a and the second film 15b. The material of these films may be the same as the material of the first resistor element 11. A third film 15c and a fourth film 15d may be provided. The second resistor element 12 is provided between the third film 15c and the fourth film 15d. The material of these films may be the same as the material of the second resistor element 12. This film, for example, suppresses deformation of the first element portion 11E and the second element portion 12E.

[0037] 5(a) to 5(e) are schematic views illustrating the operation of the sensor according to the first embodiment. These figures are time charts illustrating the first operation. The horizontal axis of these figures is time tm. The vertical axis of FIG. 5(a) is the value PW1(t) of the first power PW1. The vertical axis of FIG. 5(b) is the value Sr1(t) of the first signal Sr1. The vertical axis of FIG. 5(c) is the value Sr2(t) of the second signal Sr2. The vertical axis of FIG. 5(d) is the value Vout(t) of the detection value Vout. The vertical axis of FIG. 5(e) is the value Sc1(t) of the control signal Sc1.

[0038] As shown in FIG. 5(a), for example, a pulse of the first power PW1 is repeatedly output. The pulse may be repeatedly output in a first period T1. One pulse corresponds to one first operation. As shown in FIG. 5(b), the first signal Sr1 varies in response to the pulse of the first power PW1. Meanwhile, as shown in FIG. 5(c), for example, the second signal Sr2 varies in response to a change in the ambient temperature. Based on the first signal Sr1 and the second signal Sr2, a detection value Vout corresponding to the difference between these signals is calculated. The detection value Vout corresponds to, for example, the detection result of the detection target. The detection value Vout may be an analog value or a digital value. The detection value Vout is output during one first period T1.

[0039] As shown in FIG. 5(e), a control signal Sc1 is output. The control signal Sc1 is based on, for example, the second signal Sr2. The control signal Sc1 may be an analog signal or a digital signal. The next pulse of the first power PW1 is controlled based on the control signal Sc1. Such an operation may be performed repeatedly.

[0040] In this way, the circuit section 70 may be capable of repeatedly performing the first operation. The repetition has a first period T1. For example, the first period T1 includes a first period Tp1 and a second period Tp2 following the first period Tp1. In this example, in the first period Tp1, the control section 72 supplies the first power PW1 to the first conductive member 21, and the detection section 71 outputs the detection value Vout. The control section 72 controls the first power PW1 based on the second signal Sr2 in the second period Tp2. For example, the first period Tp1 may be shorter than the second period Tp2. By making the first period Tp1 long, for example, the time for detecting the detection target can be sufficiently long, and it is easy to obtain a highly accurate detection result. By making the second period Tp2 short, the first period T1 can be shortened. A detection operation can be performed with high frequency.

[0041] FIG. 6 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. As shown in Fig. 6, the sensor 111 according to the embodiment also includes a sensor unit 10S and a circuit unit 70 (see Fig. 1). The sensor unit 10S includes a first element unit 11E and a second element unit 12E. The first element unit 11E includes a first resistive element 11 and a first conductive member 21. The second element unit 12E includes a second resistive element 12. The circuit unit 70 includes a detection unit 71 and a control unit 72 (see Fig. 1).

[0042] In sensor 111, first element portion 11E has a MEMS structure. Second element portion 12E is fixed to base 41, and no gap is provided between base 41 and second element portion 12E.

[0043] In the sensor 111, the circuit unit 70 can also perform the first operation (see FIG. 1) described with respect to the sensor 110. For example, in the first operation, the control unit 72 can control the first power PW1 based on the second signal Sr2 corresponding to the second resistance of the second resistive element 12. In the first operation, the control unit 72 can supply the controlled first power PW1 to the first conductive member 21 to increase the first temperature of the first element unit 11E. In the first operation, the detection unit 71 can output the first signal Sr1 corresponding to the first resistance of the first resistive element 11 in the first state in which the first temperature has increased, and a detection value Vout corresponding to the difference between the second signal Sr1 and Sr2. In the sensor 111, the detection target can also be detected with high accuracy. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0044] Second embodiment FIG. 7 is a block diagram illustrating a sensor according to the second embodiment. 7, a sensor 120 according to the embodiment includes a sensor unit 10S and a circuit unit 70. In the sensor 120, the sensor unit 10S includes a temperature sensor 13. Except for this, the configuration of the sensor 120 may be similar to the configuration of the sensor 110.

[0045] In the sensor 120, the sensor unit 10S includes a first element unit 11E, a second element unit 12E, and a temperature sensor 13. The first element unit 11E includes a first resistance element 11 and a first conductive member 21. The second element unit 12E includes a second resistance element 12. The second element unit 12E may include a second conductive member 22.

[0046] In the sensor 120, the circuit section 70 includes a detection section 71 and a control section 72. The circuit section 70 is capable of performing a first operation. In the first operation, the control section 72 is capable of controlling the first power PW1 based on the detection signal Sr3 of the temperature sensor 13. In the first operation, the control section 72 is capable of supplying the controlled first power PW1 to the first conductive member 21 to increase the first temperature of the first element section 11E. In the first operation, the detection section 71 is capable of outputting a detection value Vout corresponding to the difference between a first signal Sr1 corresponding to the first resistance of the first resistive element 11 in a first state in which the first temperature has increased, and a second signal Sr2 corresponding to the second resistance of the second resistive element 12.

[0047] In the sensor 120, the first power PW1 is controlled using the detection signal Sr3 of the temperature sensor 13. This allows the temperature of the first conductive member 21 to be brought to a target state with high accuracy. This allows the detection target to be detected with high accuracy. According to the embodiment, a sensor capable of improving characteristics can be provided.

[0048] The control unit 72 may include a driver circuit 72D and a processing circuit 73C. The driver circuit 72D can supply a first power PW1 to the first conductive member 21. The processing circuit 73C can control the driver circuit 72D based on the detection signal Sr3 to control the first power PW1. For example, a control signal Sc1 is supplied from the processing unit 73R to the driver circuit 72D.

[0049] For example, the processing circuit 73C may include a processing unit 73R and a memory 73M. The memory 73M can store a relationship between a change in the detection signal Sr3 and a control value related to the first power PW1. The processing unit 73R can control the driver circuit 72D based on the relationship stored in the memory 73M and the detection signal Sr3 supplied to the control unit 72 (e.g., the processing circuit 73C).

[0050] In the sensor 120, the detection signal Sr3 changes in response to the second temperature around the sensor unit 10S. For example, the first power PW1 changes in response to the second temperature.

[0051] For example, the first signal Sr1 corresponding to the first resistor element 11 changes in response to the detection target (e.g., the state of the detection target gas) around the sensor unit 10S. The second signal Sr2 does not change in response to the detection target. Alternatively, the rate of change of the second signal Sr2 in response to the detection target is lower than the rate of change of the first signal Sr1 in response to the detection target.

[0052] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the second embodiment. As shown in FIG. 8, in the sensor 120, the sensor unit 10S further includes a base 41. The first element unit 11E, the second element unit 12E and the temperature sensor 13 are fixed to the base 41. This enables control with high spatial responsiveness. As the temperature sensor 13, any element can be used.

[0053] For example, the sensor unit 10S includes a first holding portion 31aS fixed to the base 41, and a second holding portion 32aS fixed to the base 41. The first holding portion 31aS holds the first element portion 11E. A first gap g1 is provided between the base 41 and the first element portion 11E. The second holding portion 32aS holds the second element portion 12E. A second gap g2 is provided between the base 41 and the second element portion 12E. The first conductive member 21 can be heated efficiently. External thermal influences via the base 41, etc. can be suppressed. Higher accuracy of detection becomes possible.

[0054] The embodiment may include the following configurations (technical solutions). (Configuration 1) a sensor unit including a first element portion including a first resistor element and a first conductive member, and a second element portion including a second resistor element; a circuit section including a detection section and a control section; Equipped with The circuitry is capable of performing a first operation; the control unit is capable of controlling, in the first operation, a first power based on a second signal corresponding to a second resistance of the second resistive element; the control unit, in the first operation, is capable of supplying the first power to the first conductive member to increase a first temperature of the first element unit; The sensor, wherein the detection unit is capable of outputting, in the first operation, a detection value corresponding to a difference between a first signal corresponding to a first resistance of the first resistive element in a first state in which the first temperature has risen, and the second signal. (Configuration 2) The sensor portion further includes a base, The sensor of configuration 1, wherein the first element portion and the second resistive element are fixed to the substrate. (Configuration 3) The sensor unit includes: A first holding portion fixed to the base body; A second holding portion fixed to the base; Further comprising: the first holding portion holds the first element portion, a first gap is provided between the base and the first element portion, the second holding portion holds the second element portion, The sensor according to configuration 2, wherein a second gap is provided between the base and the second element portion. (Configuration 4) The control unit includes a driver circuit and a processing circuit. the driver circuit is capable of supplying the first power to the first conductive member; The sensor according to any one of configurations 1 to 3, wherein the processing circuit is capable of controlling the driver circuit based on the second signal to control the first power. (Configuration 5) The processing circuit includes a processing unit and a memory. the memory is capable of storing a relationship between a change in the second signal and a control value related to the first power; The sensor of configuration 4, wherein the processing unit is capable of controlling the driver circuit based on the relationship stored in the memory and the second signal provided to the control unit. (Configuration 6) the second signal changes in response to a second temperature around the sensor portion; The sensor according to any one of configurations 1 to 5, wherein the first power varies depending on the second temperature. (Configuration 7) the first signal changes in response to a detection target around the sensor unit; The sensor according to any one of configurations 1 to 6, wherein the second signal does not change depending on the object to be detected, or a rate of change of the second signal depending on the object to be detected is lower than a rate of change of the first signal depending on the object to be detected. (Configuration 8) The circuit unit is capable of repeatedly performing the first operation, The repetition has a first period, the first period includes a first period and a second period following the first period, In the first period, the control unit supplies the first power to the first conductive member, and the detection unit outputs the detection value; the control unit controls the first power based on the second signal in the second period; The sensor according to any one of configurations 1 to 7, wherein the first period is shorter than the second period. (Configuration 9) a sensor unit including a first element unit including a first resistor element and a first conductive member, a second element unit including a second resistor element, and a temperature sensor; a circuit section including a detection section and a control section; Equipped with The circuitry is capable of performing a first operation; the control unit is capable of controlling a first power based on a detection signal of the temperature sensor in the first operation; the control unit, in the first operation, is capable of supplying the first power to the first conductive member to increase a first temperature of the first element unit; The sensor, wherein the detection unit is capable of outputting, in the first operation, a detection value corresponding to a difference between a first signal corresponding to a first resistance of the first resistive element in a first state in which the first temperature has risen, and a second signal corresponding to a second resistance of the second resistive element. (Configuration 10) The sensor portion further includes a base, The sensor of configuration 9, wherein the first element portion, the second element portion, and the temperature sensor are fixed to the base. (Configuration 11) The sensor unit includes: A first holding portion fixed to the base body; A second holding portion fixed to the base; Further comprising: the first holding portion holds the first element portion, a first gap is provided between the base and the first element portion, the second holding portion holds the second element portion, 11. The sensor of claim 10, wherein a second gap is provided between the base and the second element portion. (Configuration 12) The control unit includes a driver circuit and a processing circuit. the driver circuit is capable of supplying the first power to the first conductive member; 12. The sensor according to any one of configurations 9 to 11, wherein the processing circuit is capable of controlling the driver circuit based on the detection signal to control the first power. (Configuration 13) The processing circuit includes a processing unit and a memory. the memory is capable of storing a relationship between a change in the detection signal and a control value related to the first power; 13. The sensor of claim 12, wherein the processing unit is capable of controlling the driver circuit based on the relationship stored in the memory and the detection signal provided to the control unit. (Configuration 14) the detection signal changes in response to a second temperature around the sensor portion; 14. The sensor according to any one of configurations 9 to 13, wherein the first power varies depending on the second temperature. (Configuration 15) the first signal changes in response to a detection target around the sensor unit; The sensor of any one of configurations 9 to 14, wherein the second signal does not change depending on the object to be detected, or the rate of change of the second signal depending on the object to be detected is lower than the rate of change of the first signal depending on the object to be detected.

[0055] According to the embodiment, a sensor capable of improving characteristics can be provided.

[0056] The above describes the embodiment of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the sensor, such as the base, sensor unit, and control unit, are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from the known range.

[0057] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0058] In addition, all sensors that can be implemented by a person skilled in the art by appropriately modifying the design based on the sensor described above as an embodiment of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention.

[0059] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0060] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0061] 10A, 10B: first and second detection elements, 10S: sensor portion, 11, 12: first and second resistance elements, 11E, 12E: first and second element portions, 13: temperature sensor, 15a-15d: first to fourth films, 18A, 18B: first and second insulating members, 21, 22: first and second conductive members, 31aC, 32aC: first and second connection portions, 31aS, 32aS: first and second holding portions, 31bC, 32bC: first and second opposing connection portions, 31bS, 32bS: first and second opposing holding portions, 31cC, 32cC: first and second other connection portions, 31cS, 32cS: first and second other holding portions, 31dC, 32dC: first and second other opposing connection parts, 31dS, 32dS: first and second other opposing holding parts, 41: base, 41i: insulating layer, 41s: semiconductor substrate, 70: circuit part, 71: detection part, 71D: differential circuit, 71a, 71b: first and second resistance voltage conversion circuits, 72: control part, 72D: driver circuit, 73C: processing circuit, 73M: memory, 73R: processing part, 110, 111, 120: sensor, PW1: first power, Sc1: control signal, Sr1, Sr2: first and second signals, Sr3: detection signal, T1: period, Vout: detection value, g1, g2: first and second gaps

Claims

1. a sensor unit including a first element unit including a first resistor element and a first conductive member, and a second element unit including a second resistor element; a circuit section including a detection section and a control section; Equipped with The circuitry is capable of performing a first operation; the control unit is capable of controlling, in the first operation, a first power based on a second signal corresponding to a second resistance of the second resistive element; the control unit, in the first operation, is capable of supplying the first power to the first conductive member to increase a first temperature of the first element unit; The sensor, wherein the detection unit is capable of outputting a detection value corresponding to a difference between a first signal corresponding to a first resistance of the first resistive element in a first state in which the first temperature has risen and the second signal, in the first operation.

2. The sensor portion further includes a base, The sensor according to claim 1 , wherein the first element portion and the second resistive element are fixed to the base body.

3. The sensor unit includes: A first holding portion fixed to the base body; A second holding portion fixed to the base body; Further comprising: the first holding portion holds the first element portion, a first gap is provided between the base and the first element portion, the second holding portion holds the second element portion, The sensor according to claim 2 , further comprising a second gap provided between the base and the second element portion.

4. The control unit includes a driver circuit and a processing circuit. the driver circuit is capable of supplying the first power to the first conductive member; The sensor of claim 1 , wherein the processing circuit is capable of controlling the driver circuit to control the first power based on the second signal.

5. The processing circuit includes a processing unit and a memory. the memory is capable of storing a relationship between a change in the second signal and a control value related to the first power; The sensor of claim 4 , wherein the processor is capable of controlling the driver circuit based on the relationship stored in the memory and the second signal provided to the controller.

6. the second signal varies in response to a second temperature around the sensor portion; The sensor of claim 1 , wherein the first power varies in response to the second temperature.

7. the first signal changes in response to a detection target around the sensor unit, The sensor according to claim 1 , wherein the second signal does not change in response to the detection target, or a rate of change of the second signal in response to the detection target is lower than a rate of change of the first signal in response to the detection target.

8. The circuit unit is capable of repeatedly performing the first operation, The repetition has a first period, the first period includes a first period and a second period following the first period, In the first period, the control unit supplies the first power to the first conductive member, and the detection unit outputs the detection value; the control unit controls the first power based on the second signal in the second period; The sensor of claim 1 , wherein the first period of time is less than the second period of time.

9. a sensor unit including a first element unit including a first resistor element and a first conductive member, a second element unit including a second resistor element, and a temperature sensor; a circuit section including a detection section and a control section; Equipped with The circuitry is capable of performing a first operation; the control unit is capable of controlling a first power based on a detection signal of the temperature sensor in the first operation; the control unit, in the first operation, is capable of supplying the first power to the first conductive member to increase a first temperature of the first element unit; The sensor, wherein the detection unit is capable of outputting a detection value corresponding to the difference between a first signal corresponding to a first resistance of the first resistive element in a first state in which the first temperature has risen and a second signal corresponding to a second resistance of the second resistive element in the first operation.

10. The sensor portion further includes a base, The sensor according to claim 9 , wherein the first element portion, the second element portion, and the temperature sensor are fixed to the base.

11. The sensor unit includes: A first holding portion fixed to the base body; A second holding portion fixed to the base body; Further comprising: the first holding portion holds the first element portion, a first gap is provided between the base and the first element portion, the second holding portion holds the second element portion, The sensor according to claim 10 , wherein a second gap is provided between the base and the second element portion.

12. The control unit includes a driver circuit and a processing circuit. the driver circuit is capable of supplying the first power to the first conductive member; The sensor according to any one of claims 9 to 11, wherein the processing circuit is capable of controlling the driver circuit based on the detection signal to control the first power.

13. The processing circuit includes a processing unit and a memory. the memory is capable of storing a relationship between a change in the detection signal and a control value related to the first power; The sensor of claim 12 , wherein the processing unit is capable of controlling the driver circuit based on the relationship stored in the memory and the detection signal provided to the control unit.

14. the detection signal changes in response to a second temperature around the sensor portion; The sensor of claim 9 , wherein the first power varies in response to the second temperature.

15. the first signal changes in response to a detection target around the sensor unit, The sensor according to claim 9 , wherein the second signal does not change in response to the detection target, or a rate of change of the second signal in response to the detection target is lower than a rate of change of the first signal in response to the detection target.

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