Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of heating a substrate in a manner suitable for accurate temperature measurement.SOLUTION: A heating portion 18 heats a substrate 11 by irradiating the substrate 11 with light from the LEDs of a light source portion 34. The LEDs output light of a single wavelength having a peak wavelength in a wavelength range that is not transmitted through the substrate 11. A radiation thermometer provided in an LED unit 37 detects light in a wavelength range that does not include the wavelength of the light output by the LEDs to measure the temperature of the substrate 11. A light emission control portion 35 increases or decreases the intensity of the light output by each LED on the basis of the temperature of the substrate 11 measured by the radiation thermometer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] In general, in the semiconductor device manufacturing process, a resist film, which is a photosensitive resin, is widely used as a mask for etching or ion implantation to form a circuit pattern on a substrate. For example, after etching or ion implantation is performed using the resist film formed on the processing surface of a silicon substrate (silicon wafer) as a mask, the resist film is removed from the processing surface of the silicon substrate. The SPM cleaning method is known as a method for removing resist films. In the SPM cleaning method, a silicon substrate is immersed in a mixture of sulfuric acid and hydrogen peroxide, and the resist film is dissolved and removed by the persulfuric acid (Caro's acid, peroxomonosulfuric acid) generated by the sulfuric acid / hydrogen peroxide mixture. Usually, the generation of persulfuric acid is promoted by heating the sulfuric acid / hydrogen peroxide mixture to 100°C or more.

[0003] Also, a substrate processing apparatus is known that removes a resist film by irradiating a silicon substrate held on a rotating table with infrared light from an infrared lamp and spraying a sulfuric acid / hydrogen peroxide solution onto the processing surface of the silicon substrate while heating the silicon substrate (see, for example, Patent Document 1). For example, a tungsten lamp is used as the infrared lamp. The temperature of the silicon substrate during heating is measured using a radiation thermometer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2011 / 074521 Summary of the Invention [Problem to be solved by the invention]

[0005] Incidentally, the light output from an infrared lamp has a wide range of wavelength components including near infrared (wavelength range of approximately 0.7 to 2.5 μm), mid infrared (wavelength range of approximately 2.5 to 4 μm), and far infrared (wavelength of approximately 4 μm or more). Meanwhile, a radiation thermometer obtains the temperature of a substrate by detecting light in the wavelength range from near infrared to far infrared emitted from a substrate such as a silicon substrate. For this reason, if a portion of the light output from an infrared lamp is reflected inside the substrate processing apparatus and enters the radiation thermometer as disturbance light, there is a problem that an error occurs in the measured substrate temperature.

[0006] The present invention has been made in consideration of the above circumstances, and has an object to provide a substrate processing apparatus capable of heating a substrate in a manner suitable for accurate temperature measurement. [Means for solving the problem]

[0007] The substrate processing apparatus of the present invention comprises a turntable arranged to be freely rotatable about a vertical axis and rotated when processing the processing surface of the substrate, a substrate holding section provided on the turntable for holding the substrate horizontally with its processing surface facing downward and away from the upper surface of the turntable and rotating integrally with the turntable, a processing liquid supply section arranged between the substrate held on the turntable and the turntable for spraying a processing fluid to supply it to the processing surface, and a heating section arranged above the substrate held on the turntable and including a plurality of light-emitting diodes for irradiating light onto the substrate while the processing fluid is being supplied to the processing surface, and for heating the substrate by light from the plurality of light-emitting diodes. Effect of the Invention

[0008] According to the present invention, a light-emitting diode is used as a light source for heating the substrate, so that the temperature of the substrate can be measured by detecting light in a wavelength range that does not include the wavelength of the light output by the light-emitting diode, thereby enabling the temperature of the substrate to be accurately measured without being affected by the light from the light-emitting diode. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view showing a configuration of a substrate processing apparatus. [Diagram 2] FIG. 4 is an explanatory diagram showing an example of an arrangement of light-emitting diodes and radiation thermometers in a heating section. [Diagram 3] 1 is a graph showing the spectral transmittance of a silicon substrate. [Figure 4] 10 is an explanatory diagram showing another example of an arrangement of light-emitting diodes and radiation thermometers in the heating section. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] In FIG. 1, the substrate processing apparatus 10 removes a resist (photoresist, photosensitive resin) film (not shown) formed on the substrate 11. In this example, the substrate processing apparatus 10 removes the resist film using a mixture of sulfuric acid and hydrogen peroxide. In this example, the substrate 11 is a single crystal silicon substrate (silicon wafer). One surface of the substrate 11 is a processing surface S1 to be processed. That is, the processing surface S1 is a substrate surface (a surface of a silicon wafer) on which a circuit composed of semiconductor elements or the like is formed, and the substrate processing apparatus 10 removes a resist film formed when forming the circuit on this processing surface S1. The substrate 11 is not limited to a silicon substrate, and may be various substrates such as a compound semiconductor substrate (e.g., a III-V group semiconductor substrate such as InP or GaAs) or a SiC substrate.

[0011] The substrate processing apparatus 10 includes a housing 12, a turntable 14, a loading mechanism 15, a processing liquid supply unit 16, a heating unit 18, a discharge unit 19, etc., and each unit is generally controlled by a control unit (not shown). The housing 12 is cylindrical with a bottom, and has a circular upper opening 12a at its top. The upper opening 12a is formed with a diameter larger than that of the substrate 11. The substrate 11 is inserted into and removed from the housing 12 through this upper opening 12a. As will be described later, in this example, the upper opening 12a serves as an intake port for taking in outside air into the housing 12.

[0012] The rotating table 14 is disk-shaped and disposed within the housing 12. The housing 12 also accommodates the substrate 11. The rotating table 14 is fixed to the upper end of a drive shaft 21. The drive shaft 21 is coaxial with the rotating table 14. The drive shaft 21 penetrates the bottom surface 12b of the housing 12 in the thickness direction (vertical direction). The drive shaft 21 has a through hole 21a formed therein that penetrates in the vertical direction, and the rotating table 14 has a through hole 14a formed in the center thereof that is connected to the through hole 21a.

[0013] The turntable 14 is rotated by the drive mechanism 23 and moves in the vertical direction. The turntable 14 is rotatable around a vertical rotation axis (vertical axis) Z together with the drive shaft 21, and rotates with its upper surface kept horizontal. The turntable 14 is also rotatable together with the drive shaft 21 in the vertical direction, and moves between an elevated position where the upper portion of the substrate holder 25 (described later) protrudes from the upper opening 12a, and a lowered position where the turntable 14 moves downward from the elevated position and receives the substrate 11 in the housing 12 for processing. When the substrate 11 is transferred between the loading mechanism 15 and the substrate holder 25, the turntable 14 is in the elevated position.

[0014] The drive mechanism 23 is composed of a motor that serves as a power source for rotating the drive shaft 21 and moving it vertically, and gears that rotate the drive shaft 21 and move it vertically with the driving force of the motor. The drive mechanism 23 rotates the turntable 14 by rotating the drive shaft 21, and moves the turntable 14 between a raised position and a lowered position by moving the drive shaft 21 vertically. The rotation speed of the turntable 14 is adjusted by increasing or decreasing the speed of the motor of the drive mechanism 23.

[0015] A substrate holding section 25 for holding the substrate 11 is provided on the upper surface of the turntable 14. The substrate holding section 25 is composed of a plurality of chuck pins 25a provided on the periphery of the turntable 14 and a plurality of support pins (not shown) provided adjacent to each of the chuck pins 25a, and these chuck pins 25a and support pins rotate integrally with the turntable 14. The plurality of chuck pins 25a and support pins are arranged at predetermined intervals in the circumferential direction of the turntable 14. Although only two chuck pins 25a are illustrated in FIG. 1, in reality, for example, six chuck pins 25a and six support pins are provided.

[0016] The support pins of the substrate holding unit 25 are adjusted so that their heights from the upper surface of the rotary table 14 are the same. When the substrate 11 is held on the rotary table 14, the peripheral portion of the substrate 11 is placed on the upper ends of the support pins by the loading mechanism 15, and in this state, the chuck pins 25a move toward the center of the rotary table 14. As a result, the chuck pins 25a clamp the substrate 11 and hold the substrate 11 parallel, i.e., horizontal, with a predetermined gap between them and the upper surface of the rotary table 14. In this way, the substrate 11 is held by the substrate holding unit 25 and fixed coaxially with the rotary table 14. The fixed substrate 11 rotates integrally with the rotary table 14. When the substrate 11 is transferred to the loading mechanism 15, the chuck pins 25a move toward the outer periphery of the rotary table 14 and release the substrate 11 from its holding. Note that the above-mentioned configuration of the substrate holding unit 25 is an example, and is not limited thereto.

[0017] As described above, the loading mechanism 15 transfers the substrate 11 to the substrate holding part 25. The loading mechanism 15 is composed of a plurality of transport arms, a substrate inverting part, etc. The substrate 11 is stored in a storage cassette (not shown) with the processing surface S1 facing upward. The substrate 11 to be processed is taken out of the storage cassette by the transport arm and transported to the substrate inverting part, where it is inverted upside down so that the processing surface S1 faces downward, and then moved by another transport arm from the substrate inverting part to a position supported by the substrate holding part 25. Therefore, in this example, the loading mechanism 15 is a setting mechanism that sets the substrate 11 in the substrate holding part 25 with the processing surface S1 facing downward.

[0018] The processing liquid supply unit 16 supplies, as processing liquids, to the processing surface S1, SPM for removing a resist film formed on the processing surface S1 and pure water for cleaning (pure water rinsing) the processing surface S1. The processing liquid supply unit 16 has a supply unit 26, a nozzle unit 27, and supply pipes 28a to 28c. The nozzle unit 27 has a nozzle head 27a for spraying SPM and a nozzle head 27b for spraying pure water, and is disposed in the through hole 14a of the turntable 14. That is, the nozzle heads 27a and 27b are disposed in the center of the turntable 14 and exposed to the upper side of the turntable 14. The nozzle unit 27 moves vertically together with the turntable 14, but is separated from the turntable 14 and fixed with respect to the rotation direction.

[0019] In this example, nozzle head 27a is, for example, dome-shaped with multiple ejection holes, and mixes the supplied SPM and nitrogen (N2) gas into its hollow interior and ejects the mixture from each of the ejection holes toward processing surface S1. Nozzle head 27b is made up of multiple nozzles that eject the supplied pure water, and ejects the pure water from each nozzle toward processing surface S1. The ejection direction, ejection amount, etc. of nozzle heads 27a and 27b are adjusted so that the SPM and pure water are uniformly supplied to substrate 11 rotating together with turntable 14.

[0020] Supply pipes 28a-28c are each passed through through hole 21a of drive shaft 21, and one end of each is connected to nozzle portion 27. The other end of each of supply pipes 28a-28c is connected to supply unit 26. Supply unit 26 supplies SPM to nozzle head 27a via supply pipe 28a and nitrogen gas via supply pipe 28b, and supplies pure water to nozzle head 27b via supply pipe 28c. The supply of SPM and nitrogen gas and the supply of pure water are selectively performed, and the supply of pure water is performed after removing the resist film with SPM. In this example, SPM is the processing fluid.

[0021] The heating unit 18 heats the substrate 11 by irradiating the substrate 11 with light, and has a light source unit 34 disposed above the housing 12, and a light emission control unit 35. The light source unit 34 is composed of a housing 36, an LED unit 37 housed in a bottom opening 36a of the housing 36, a transparent protective plate 38 closing the bottom opening 36a, and the like.

[0022] The LED unit 37 includes a plurality of LEDs (light-emitting diodes) 37a (see FIG. 2), and emits light from each LED 37a downward through a protective plate 38. The light emission control unit 35 increases or decreases the intensity of light output from each LED 37a based on the temperature of the substrate 11 measured by a radiation thermometer 37b (see FIG. 2) provided on the LED unit 37. This keeps the substrate 11 at a target temperature.

[0023] The light source unit 34 is disposed directly above the upper opening 12a, and is moved vertically by a moving mechanism 39 between a heating position where the light source unit 34 is close to the upper opening 12a and heats the substrate 11, and a retracted position where the light source unit 34 moves upward from the heating position and allows the substrate 11 to be inserted and removed from the upper opening 12a. The light source unit 34 at the heating position forms a small gap with the periphery of the upper opening 12a. In this example, the light source unit 34 is moved vertically to the heating position and the retracted position, but the light source unit 34 may also be moved horizontally from directly above the upper opening 12a to the retracted position so as not to interfere with the insertion and removal of the substrate 11.

[0024] When removing the resist film from the substrate 11, the light source unit 34 is placed in the heating position. In this heating position, the light source unit 34 irradiates the rear surface S2 (the surface opposite to the processing surface S1, the rear surface of the silicon wafer) of the substrate 11 directly below it with light from the LED 37a through the upper opening 12a to heat the substrate 11. Heating the substrate 11 promotes the oxidative decomposition of the resist film by the sulfuric acid / hydrogen peroxide mixture.

[0025] A guide tube 41 is provided in the housing 12. The guide tube 41 in this example is a tube with a tapered shape in which the diameter of the upper part gradually decreases toward the top. The guide tube 41 is fixed to the housing 12, for example, and its axis is adjusted to coincide with the center of rotation of the turntable 14. The lower end of the guide tube 41 reaches the bottom surface 12b of the housing 12. The turntable 14 in the lowered position is disposed in an opening 41a at the upper part of the guide tube 41. The inner diameter of the opening 41a is slightly larger than the outer diameter of the turntable 14, and the gap between the turntable 14 and the guide tube 41 is made small. The guide tube 41 forms an exhaust route between the housing 12 and the guide tube 41. The provision of the guide tube 41 prevents particles from being stirred up by the rotation of the turntable 14, suppresses adhesion of particles to the substrate 11, and prevents the processing liquid and its vapor from flowing into the mechanism such as the drive shaft 21.

[0026] The discharge unit 19 is composed of the upper opening 12a as the above-mentioned inlet, a discharge port 44 formed on the bottom surface 12b of the housing 12, a suction device 45, etc. As the suction device 45, for example, a pump is used and is connected to the discharge port 44. The discharge unit 19 drives the suction device 45 to perform suction from the discharge port 44, thereby generating a pressure difference that makes the pressure at the discharge port 44 smaller than the pressure between the substrate 11 and the turntable 14 and the upper opening 12a. As a result, an airflow is formed from the upper opening 12a through between the housing 12 and the guide tube 41 toward the discharge port 44, and various gases flowing out from between the substrate 11 and the turntable 14, processing liquid and its droplets, and foreign matter such as particles generated by processing are efficiently guided to the discharge port 44 and discharged to the outside of the housing 12, and the foreign matter is prevented from leaking out of the housing 12 from the upper opening 12a. The discharge port 44 is provided with a gas-liquid separation mechanism that separates gas and liquid and discharges them. Incidentally, the mist in the gas discharged from the exhaust port 44 and the gas produced by vaporizing the treatment liquid are collected by a demister or the like.

[0027] A water supply pipe 47 is provided near the upper opening 12a outside the housing 12. This water supply pipe 47 supplies pure water discharged from its tip to the back surface S2 of the substrate 11 held on the turntable 14 inside the housing 12, thereby cleaning the back surface S2.

[0028] 2, a plurality of LEDs 37a are arranged in the LED unit 37. In the LED unit 37, the plurality of LEDs 37a are distributed and arranged on a disk-shaped base plate 37c facing the substrate 11, i.e., directly above the substrate 11, and having approximately the same size as the substrate 11. That is, the plurality of LEDs 37a are distributed and arranged in a facing area having approximately the same size as the substrate 11. This allows the substrate 11 to be heated uniformly. The number of LEDs 37a is not limited.

[0029] In this example, the base plate 37c is divided into four regions D1 to D4 from the center to the outside, and the light emission control unit 35 controls the LEDs 37a by dividing them into four groups according to the regions D1 to D4. That is, the LEDs 37a are divided into the region D1 in the center of the base plate 37c, the region D2 outside the region D1, the region D3 outside the region D2, and the region D4 on the outermost periphery. Each of the regions D1 to D4 is provided with one radiation thermometer 37b. The radiation thermometers 37b are arranged to be shifted from each other in the radial direction of the base plate 37c. Therefore, when the light source unit 34 is in the heating position and the LED unit 37 faces the substrate 11, the radiation thermometers 37b are arranged to face different positions in the radial direction of the substrate 11.

[0030] In this example, the temperature measurement unit is made up of four radiation thermometers 37b. The radiation thermometer 37b constituting the temperature measurement unit may be one or more, and the number may be determined arbitrarily depending on the mode of control.

[0031] The light emission control unit 35 adjusts the intensity of light output from each of the LEDs 37a arranged in the same area as the radiation thermometer 37b based on the temperature measurement result of the substrate 11 by the radiation thermometer 37b, thereby controlling heating so that the target temperature is uniformly achieved from the center to the outer periphery of the substrate 11.

[0032] By using the LED 37a as a light source for heating the substrate 11, the life of the light source unit 34 is longer than that of an infrared lamp such as a tungsten lamp. As a result, the frequency of maintenance of the light source unit 34 can be reduced, and the operating rate of the device can be improved. In addition, the light output by the LED 37a does not have a wide wavelength range as an infrared lamp does, and has a limited wavelength range. For this reason, the radiation thermometer 37b can be easily configured to detect light of a wavelength or wavelength range different from the light from the LED 37a, that is, to measure the temperature of the substrate 11 by preventing the radiation thermometer 37b from receiving the light from the LED 37a. This makes it possible to accurately measure the temperature of the substrate 11 without being affected by the light from the LED 37a.

[0033] The LED 37a preferably outputs light of a single wavelength, and preferably outputs light of a wavelength range that is not transmitted through the substrate 11. The single-wavelength light output by the LED 37a does not need to have a strictly single wavelength, and may be light that has some spread around a single wavelength (peak wavelength), as is generally called a single wavelength. Note that light includes visible light as well as electromagnetic waves such as infrared rays and ultraviolet rays that have longer wavelengths than visible light.

[0034] By using the LED 37a that outputs light of a single wavelength, it is possible to more easily measure the temperature of the substrate 11 without the radiation thermometer 37b receiving light from the LED 37a. In addition, by using the LED 37a that outputs light in a wavelength range that is not transmitted through the substrate 11, it is possible to prevent the light from the LED 37a from transmitting through the substrate 11 and heating, deterioration, and deformation of the turntable 14 and the like, and by preventing heating of the turntable 14, the temperature measurement by the radiation thermometer 37b is not affected by the heat of the turntable 14, and the temperature of the substrate 11 can be measured more accurately. The wavelength range that is not transmitted through the substrate 11 may be any wavelength range that can be considered to have a relatively low transmittance or a relatively sufficiently low transmittance based on the transmission characteristics (spectral transmittance) of the substrate 11, and is preferably a wavelength range that can be considered to have a transmittance of "0" or "0".

[0035] The substrate 11 in this example, i.e., a single crystal silicon wafer, has a high transmittance for light (infrared rays) with a wavelength of 1.1 μm or more, as shown in the spectral transmittance in FIG. 3. For this reason, it is preferable to use an LED 37a that outputs light of less than 1.1 μm for the substrate 11 (silicon wafer). This suppresses the transmission of light from the LED 37a through the substrate 11, thereby preventing heating, deterioration, deformation, etc. of the turntable 14, etc. By preventing the heating of the turntable 14, etc., it becomes possible to measure the temperature of the substrate 11 more accurately. Note that the substrate 11 (silicon wafer) transmits light from a wavelength of approximately 1 μm, and the transmittance is almost saturated at a wavelength of 1.1 μm, so it is more preferable to use an LED 37a that outputs light with a wavelength of 1 μm or less.

[0036] The LED 37a may be, for example, a blue LED, i.e., a white diode having a structure in which an active layer that generates blue light and a yellow phosphor are combined, and the light outputted from the LED 37a has a predetermined wavelength range. In this case, it is preferable that the entire wavelength range of the light outputted from the LED 37a falls within the wavelength range that is not transmitted through the substrate 11. It is more preferable that the LED 37a outputting light of a single wavelength having a peak wavelength within the wavelength range that is not transmitted through the substrate 11 has the peak wavelength and its surrounding wavelengths within the wavelength range that is not transmitted through the substrate 11. Furthermore, the LED 37a may be configured to output light of the above-mentioned wavelength or wavelength range by an optical filter such as a high-pass filter, low-pass filter, or band-pass filter that selectively transmits or reflects a specific wavelength or wavelength range.

[0037] From the viewpoint of high external quantum efficiency and efficient heating of the substrate 11, the LED 37a preferably has a peak wavelength of light outputted therefrom within the range of 0.35 μm to 0.70 μm, more preferably within the range of 0.37 μm to 0.65 μm, and more preferably within the range of 0.40 μm to 0.50 μm or 0.60 μm to 0.65 μm. For the same reason, the LED 37a is preferably one whose active layer is made of a III-V group nitride compound semiconductor in which the group V element is N (nitrogen), such as a GaN, AlGaN, InGaN, or AlInGaN semiconductor, and an AlGaInP semiconductor.

[0038] In this example, the LED 37a used is one that outputs single-wavelength light having a peak wavelength in a wavelength range that is not transmitted through the substrate 11 (single-wavelength light whose wavelength range is included in the wavelength range of light that is output within the wavelength range that is not transmitted through the substrate 11). More specifically, in this example, the LED 37a outputs single-wavelength light having a peak wavelength in the range of 0.40 μm or more and 0.50 μm or less.

[0039] The radiation thermometer 37b measures the intensity of light emitted from the substrate 11 to measure the temperature of the substrate 11. The radiation thermometer 37b receives (detects) light in a wavelength range that does not include the wavelength of the light output by the LED 37a. This allows the temperature of the substrate 11 to be accurately measured without being affected by the light output by the LED 37a. In other words, even if the light from the LED 37a enters the radiation thermometer 37b as disturbance light, the temperature of the substrate 11 is accurately measured by the radiation thermometer 37b without being affected by the light.

[0040] The structure of the radiation thermometer 37b is not limited. For example, a monochromatic radiation thermometer that obtains temperature from light (infrared rays) of a single wavelength (narrow wavelength range) and emissivity, a partial radiation thermometer that obtains temperature from light of a relatively wide wavelength range and emissivity, a two-color radiation thermometer that obtains temperature from the ratio of radiance using two measurement wavelengths, etc. can be used. In addition, the radiation thermometer 37b may have a structure in which an optical filter such as a high-pass filter, a low-pass filter, or a band-pass filter is provided in front of the light receiving element (light receiving surface) of the radiation thermometer 37b, which cuts the light output by the LED 37a and transmits light for the radiation thermometer 37b to measure the temperature. Even if the radiation thermometer 37b does not have sensitivity in the specifications, it may have a slight sensitivity to the light from the LED 37a, so providing the radiation thermometer 37b with an optical filter that cuts the light from the LED 37a is useful for accurately measuring the temperature of the substrate 11.

[0041] As described above, the heating unit 18 heats the substrate 11 with light from the LED 37a, and since the wavelength range of the light is limited, it is easy to configure the radiation thermometer 37b to measure the temperature of the substrate 11 with light in a wavelength range that does not include the light from the LED 37a, and this is made even easier by using the LED 37a with a single wavelength.

[0042] Next, the operation of the above configuration will be described. The procedure of the process described below is an example, and is not limited to the procedure of the process. The suction device 45 is constantly driven, and the inside of the housing 12 is in a state of being suctioned. The light source unit 34 is moved to a retreated position. The rotary table 14 is raised, and the tips of the support pins of the substrate holding unit 25 protrude upward from the upper opening 12a of the housing 12. In this state, the loading mechanism 15 places the peripheral portion of the substrate 11, with the processing surface S1 facing downward, on each of the support pins. After the holding of the substrate 11 by the loading mechanism 15 is released, the substrate 11 is clamped by each of the chuck pins 25a. As a result, the substrate 11 is fixed on the rotary table 14 with its processing surface S1 facing downward.

[0043] After the substrate 11 is fixed, the turntable 14 is moved to a lowered position, and the drive mechanism 23 rotates the substrate 11 together with the turntable 14. After the turntable 14 starts to rotate, the light source 34 is moved to the heating position. The supply of sulfuric acid / hydrogen peroxide is started from the supply unit 26, and the light emission control unit 35 turns on the LEDs 37a of the light source 34. By turning on the LEDs 37a, the substrate 11 is heated from the rear surface S2 side to a predetermined temperature (for example, 240° C.).

[0044] As described above, the substrate 11 is held with the processing surface S1 facing downward, and the light from each LED 37a is incident on the back surface S2 on which no circuit pattern is formed. Therefore, unlike the case of holding the substrate 11 with the processing surface S1 facing upward and allowing light to be incident on the processing surface S1, there is no reflection or scattering due to the resist film, wiring, unevenness of the insulating film, tapered surfaces of the wiring and insulating film, etc. of the circuit pattern formed on the processing surface S1. Therefore, in the substrate processing apparatus 10, the substrate 11 is uniformly and efficiently heated by the light from the LED 37a without being affected by reflection or scattering due to the circuit pattern. In addition, since the substrate 11 is heated from its back surface S2 side, the heat is diffused inside the substrate 11 and transferred to the processing surface S1. As a result, the processing surface S1 is heated at a more uniform temperature.

[0045] Sulfuric acid / hydrogen peroxide mixture from supply unit 26 is supplied to nozzle head 27a through supply pipe 28a together with nitrogen gas from supply pipe 28b. As a result, Sulfuric acid / hydrogen peroxide mixture is sprayed from each nozzle hole of nozzle head 27a together with nitrogen gas toward processing surface S1 of substrate 11. Sulfuric acid / hydrogen peroxide mixture supplied to processing surface S1 from nozzle head 27a flows on processing surface S1 toward the outer periphery of substrate 11 while spreading in the circumferential direction due to the rotation of substrate 11. As a result, the entire surface of processing surface S1 is exposed to Sulfuric acid / hydrogen peroxide mixture sprayed from nozzle head 27a. When the resist film on processing surface S1 is exposed to Sulfuric acid / hydrogen peroxide mixture in this manner, that portion is oxidized and decomposed by Sulfuric acid / hydrogen peroxide mixture, and is gradually decomposed and removed. Since processing surface S1 faces downward, foreign matter such as particles generated on processing surface S1 is unlikely to remain on processing surface S1. Particles and the like separated from processing surface S1 fall onto turntable 14 together with the SPM, or are carried to the outside of substrate 11 together with the SPM and discharged through discharge port 44.

[0046] As described above, in the substrate processing apparatus 10, the substrate 11 is heated by the light from the LEDs 37a of the light source unit 34, which promotes the oxidative decomposition of the resist film by the sulfuric acid / hydrogen peroxide mixture. Moreover, the processing surface S1 is heated to a uniform temperature, so that the oxidative decomposition of the resist film progresses uniformly.

[0047] In the conventional configuration using infrared lamps, the substrate 11 has a high transmittance for most of the wavelength range of the light output from the infrared lamp, so the heating efficiency of the substrate 11 is low. In addition, in a configuration in which the substrate 11 is held with the processing surface S1 facing upward and light is irradiated from above, the sulfuric acid / hydrogen peroxide on the processing surface S1 is directly irradiated with light and heated, so that the sulfuric acid / hydrogen peroxide that does not contribute to the removal of the resist film is also heated, and the heating efficiency is also low. In contrast, in the substrate processing apparatus 10, the light from each LED 37a is directly irradiated to the back surface S2 and absorbed by the substrate 11, so that the substrate 11 is heated. Then, the sulfuric acid / hydrogen peroxide that comes into contact with the substrate 11 is heated. Therefore, the sulfuric acid / hydrogen peroxide that comes into contact with the processing surface S1 and contributes to the removal of the resist film is efficiently heated.

[0048] Furthermore, the light from the LEDs 37a has a wavelength that is not transmitted through the substrate 11, and therefore the light from the LEDs 37a does not transmit through the substrate 11 and is irradiated onto the turntable 14, thereby not heating the turntable 14. Furthermore, most of the light from the LEDs 37a contributes to heating the substrate 11, and therefore the substrate 11 can be heated efficiently.

[0049] While the LEDs 37a are on, that is, while the substrate 11 is being heated, the light emission control unit 35 controls each LED 37a based on the measurement results of each radiation thermometer 37b. For this reason, for example, when the temperature of the substrate 11 measured by the radiation thermometer 37b arranged in the region D3 is higher than the target temperature, the light emission control unit 35 reduces the light emission intensity of each LED 37a arranged in the region D3. This reduces the temperature of the region of the substrate 11 corresponding to the region D3. Conversely, when the temperature of the substrate 11 measured by the radiation thermometer 37b arranged in the region D3 is lower than the target temperature, the light emission control unit 35 increases the light emission intensity of each LED 37a arranged in the region D3 to increase the temperature of the region of the substrate 11 corresponding to the region D3. In this way, the entire surface of the substrate 11 is made to have a uniform target temperature.

[0050] The radiation thermometer 37b measures the temperature of the substrate 11 with light in a wavelength range that does not include light from the LED 37a. Therefore, the temperature of the substrate 11 is accurately measured by each radiation thermometer 37b without being affected by light from the LED 37a reflected by the substrate 11, the inner surface of the housing 12, the guide tube 41, etc. Therefore, the temperature of the substrate 11 is controlled to a target temperature with higher accuracy. In addition, while the radiation thermometer 37b is measuring the temperature of the substrate 11, it is not necessary to turn off the LED 37a, and the heated state can be maintained by continuing to turn it on, so the temperature of the substrate 11 does not drop temporarily. In other words, the radiation thermometer 37b can continuously measure the temperature of the substrate 11, and the light emission control unit 35 can continuously control the light emission intensity of each LED 37a based on the temperature measurement. This allows the substrate 11 to be precisely controlled to a target temperature.

[0051] When a predetermined processing time has elapsed since the start of the supply of the sulfuric acid / hydrogen peroxide solution, the supply of the sulfuric acid / hydrogen peroxide solution from the supply unit 26 is stopped. The predetermined processing time is set in advance as a time required for completely removing the resist film. In addition, the LED 37a is turned off, and the light source unit 34 is moved to the retreat position.

[0052] After the light source unit 34 moves to the retreated position, pure water is supplied from the supply unit 26 to the nozzle head 27b via the supply pipe 28c. As a result, pure water is sprayed from the nozzle head 27b toward the processing surface S1 of the substrate 11, and the pure water flows toward the outer periphery of the substrate 11 while spreading in the circumferential direction on the processing surface S1 due to the rotation of the substrate 11. In addition, pure water is supplied from the water supply pipe 47 to the back surface S2 of the substrate 11. As a result, the pure water flows toward the outer periphery of the substrate 11 while spreading in the circumferential direction on the back surface S2 due to the rotation of the substrate 11. In this way, pure water is supplied to the entire surfaces of the processing surface S1 and the back surface S2, respectively, for cleaning. After a predetermined time has elapsed, the supply of pure water to the nozzle head 27b and the water supply pipe 47 is stopped.

[0053] During the above-mentioned processing with pure water, pure water is supplied to the upper surface of the turntable 14 from a table nozzle (not shown) provided in the nozzle unit 27. As a result, the upper surface of the turntable 14, like the substrate 11, is also cleaned with pure water by removing foreign matter such as particles attached thereto. The sulfuric acid / hydrogen peroxide solution and pure water scattered from the rotating substrate 11 and the turntable 14 collide with the inner wall of the housing 12. As a result, foreign matter such as particles attached to the inner wall of the housing 12 is removed and cleaned with pure water. In this way, the substrate processing apparatus 10 self-cleans the inside of the housing 12 while processing the substrate 11. The chuck pins 25a and the support pins are cleaned by supplying pure water from nozzles provided specifically for them every time a predetermined number of substrates are processed.

[0054] After washing with pure water, the rotation speed of the turntable 14 is increased, so that the pure water adhering to both sides of the substrate 11 is blown off by centrifugal force, and the substrate 11 is drained. At this time, the turntable 14 and the substrate holder 25 are also drained.

[0055] As described above, when the resist film is removed, the water is washed with pure water, and the water is drained, the sulfuric acid / hydrogen peroxide mixture and pure water that flow out from substrate 11 and turntable 14, and further the sulfuric acid / hydrogen peroxide mixture and pure water that adheres to the inner wall of housing 12 and flows down, are sucked and discharged from discharge port 44. Even if fine droplets or vapor of the sulfuric acid / hydrogen peroxide mixture and pure water are generated, the droplets and vapor are guided to discharge port 44 by the airflow from upper opening 12a. Therefore, the droplets and vapor of the sulfuric acid / hydrogen peroxide mixture and pure water do not leak out from upper opening 12a.

[0056] When the draining is completed, the rotation of the turntable 14 is stopped. The turntable 14 moves from the lowered position to the raised position, and the substrate 11 is released from the clamping by the chuck pins 25a. The substrate 11 is then transported by the loading mechanism 15 to another substrate processing apparatus, where it is washed in the SC-1 processing liquid and then with pure water, and then dried. The substrate 11 is then returned to the storage cassette by the loading mechanism 15.

[0057] In this manner, processing of one substrate 11 is completed, and then a similar procedure is performed to process a new substrate 11. Since the self-cleaning of the turntable 14 and the inside of the housing 12 has been completed as described above, processing of a new substrate 11 can be performed immediately.

[0058] The arrangement of the LEDs 37a and the radiation thermometers 37b in the LED unit 37 and the method of controlling the LEDs 37a are merely examples and are not limited to those described above. In the example shown in FIG. 4, the center of the base plate 37c, which is the facing region, is set as the center of the concentric circles, and a plurality of LEDs 37a are arranged on each of the concentric circles C1 to C6 having different diameters, and the radiation thermometers 37b are arranged on the concentric circles C1 to C6 from the center of the base plate 37c (facing region). In this example, the plurality of LEDs 37a on the same concentric circle are controlled based on the temperature measurement result of the substrate 11 by the radiation thermometer 37b on the same concentric circle. The LEDs 37a on the concentric circle C1 are controlled based on the temperature measurement result of the radiation thermometer 37b on the concentric circle C1 and the radiation thermometer 37b at the center of the base plate 37c. The method of controlling the LEDs 37a is not limited to those described above.

[0059] In the above example, the process of removing the resist film using sulfuric acid / hydrogen peroxide as the processing fluid is described, but the process using the processing fluid is not limited to this and may be, for example, etching. The processing fluid is not limited to sulfuric acid / hydrogen peroxide, and may be anything appropriate for the process. For example, the present invention can be applied to a process of etching a silicon nitride (SiN) film on a substrate (silicon substrate) using a phosphoric acid solution containing phosphoric acid, such as an aqueous phosphoric acid solution, as the processing fluid. In this case, the substrate is heated to, for example, about 160° C. by light from the LED unit of the heating section.

[0060] Furthermore, the processing fluid may be a liquid or a gas. For example, the present invention can be applied to the case where a resist film is removed using ozone gas as a processing fluid. Removal of a resist film using ozone gas is described, for example, in JP 2020-120010 A. In addition, the present invention can be applied to the case where a gas-liquid two-phase fluid obtained by mixing ozone gas and ozone water is flowed as a processing fluid onto the processing surface of a substrate to remove a resist film. Removal of a resist film using a gas-liquid two-phase fluid is described, for example, in JP 2020-120011 A.

[0061] In the above example, one guide tube is provided in the housing, but multiple guide tubes with different opening heights at the top may be provided with their axes aligned with the rotation center of the turntable, and the turntable may be raised and lowered so as to rotate within the openings formed at the top of each guide tube. With this configuration, multiple airflow paths are formed between the outermost guide tube and the housing, and between the guide tubes. This allows the height of the turntable to be changed depending on the type of gas or processing liquid to be supplied, thereby changing the path for the gas or processing liquid flowing out from between the turntable and the substrate, and discharging them separately outside the housing. This configuration is described in JP 2012-209559 A and JP 2007-180268 A. [Explanation of symbols]

[0062] 10 Substrate processing equipment 11 Substrate 14 Rotating Table 16 Processing liquid supply section 18 Heating section 35 Light emission control unit 37a LED 37b Radiation thermometer S1 Treatment surface S2 back

Claims

1. a rotary table that is rotatably disposed about a vertical axis and that is rotated when processing the processing surface of the substrate; a substrate holder that is provided on the turntable and that holds the substrate horizontally with the processing surface facing downward and separated from an upper surface of the turntable, and that rotates integrally with the turntable; a processing liquid supply unit disposed between the substrate held on the turntable and the turntable, the processing liquid supply unit spraying a processing fluid onto the processing surface; a heating section that is disposed above the substrate held on the rotating table, includes a plurality of light-emitting diodes that irradiate light onto the substrate while the processing fluid is being supplied to the processing surface, and heats the substrate with light from the plurality of light-emitting diodes; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , wherein the plurality of light emitting diodes output light within a wavelength range that is not transmitted through the substrate.

3. The substrate processing apparatus according to claim 1 , wherein the plurality of light emitting diodes output light of a single wavelength.

4. 2 . The substrate processing apparatus according to claim 1 , wherein the plurality of light emitting diodes output light of a single wavelength having a peak wavelength within a wavelength range that is not transmitted through the substrate.

5. the substrate is a silicon substrate, The substrate processing apparatus according to claim 4 , wherein the plurality of light emitting diodes output light having a peak wavelength of less than 1.1 μm.

6. a temperature measuring unit having one or more radiation thermometers for measuring a temperature of the substrate by detecting light having a wavelength different from that of the light output from the plurality of light emitting diodes; a light emission control unit that controls outputs of the plurality of light emitting diodes based on a measurement result of the temperature measurement unit; 6. The substrate processing apparatus according to claim 1, further comprising:

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