Organic compound and light-emitting device

Abstract

To provide a novel organic compound excellent in convenience, usefulness or reliability.SOLUTION: The compound is represented by general formula (G2), where X represents a sulfur atom or an oxygen atom; R1, R2, R6-R9, R20-R26, R30-R34, R40-R43, R103-R105, R135, and R136 each independently represent hydrogen (including deuterium), an alkyl group, a cycloalkyl group, an aryl group, a dibenzothiophenyl group, or a dibenzofuranyl group; and n represents an integer of 1-4.SELECTED DRAWING: None

Description

[Technical field]

[0001] An embodiment of the present invention relates to an organic compound, a light-emitting device, a light-receiving device, a light-receiving and light-emitting device, a light-emitting device, a light-receiving and light-emitting device, a display device, an electronic device, a lighting device, and an electronic device. Note that an embodiment of the present invention is not limited to the above technical field. The technical field of an embodiment of the invention disclosed in the present specification and the like relates to an object, a method, or a manufacturing method. Alternatively, an embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of an embodiment of the present invention disclosed in the present specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, an imaging device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0002] Organic EL devices (organic EL elements), which are typified by light-emitting devices, light-receiving devices, and light-receiving / light-emitting devices that utilize electroluminescence (organic electroluminescence) using organic compounds, are being put into practical use.

[0003] For example, the basic structure of a light-emitting device is a pair of electrodes sandwiching an organic compound layer (EL layer) containing a light-emitting material. By applying a voltage to this device, carriers are injected, and the recombination energy of the carriers is utilized to emit light from the light-emitting material.

[0004] The basic structure of a light-receiving device is a pair of electrodes sandwiching an organic compound layer (active layer) containing a light-emitting material between them. This device absorbs light energy and generates carriers, which can obtain electrons from the photoelectric conversion material.

[0005] For example, a functional panel is known in which pixels provided in a display region include a light-emitting element (light-emitting device) and a photoelectric conversion element (light-receiving device) (Patent Document 1).

[0006] Thus, displays and lighting devices using organic EL devices are suitable for use in a variety of electronic devices, and research and development is ongoing to develop organic EL devices with better efficiency and life span.

[0007] The characteristics of organic EL devices have improved remarkably, but they are still insufficient to meet high demands for all characteristics, including efficiency and durability. In particular, to solve problems such as burn-in, which are unique to EL, it is better to minimize the decrease in efficiency due to degradation.

[0008] Degradation is largely dependent on the luminescent center substance and the materials around it, so there has been active development of organic compound materials with good properties. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] WO2020 / 152556 Summary of the Invention [Problem to be solved by the invention]

[0010] An object of one embodiment of the present invention is to provide a novel organic compound. Another object of one embodiment of the present invention is to provide an organic compound having a stable excited state. Another object of one embodiment of the present invention is to provide an organic compound that can be used as a hole-transporting material. Another object of one embodiment of the present invention is to provide an organic compound that is easy to synthesize. Another object of one embodiment of the present invention is to provide a light-emitting device having a long driving lifetime. Another object of one embodiment of the present invention is to provide a light-emitting device in which a voltage change during driving is small. Another object of one embodiment of the present invention is to provide a novel light-emitting device. Another object of one embodiment of the present invention is to reduce the manufacturing cost of a light-emitting device. Another object of one embodiment of the present invention is to provide a light-emitting device, electronic device, or lighting device with low power consumption.

[0011] Another object of one embodiment of the present invention is to provide an organic compound having a selectively deuterated partial structure, to perform molecular design that can reduce the complexity of a synthetic route, the need for high temperature and high pressure in the synthesis, and to synthesize an organic compound molecularly designed in such a manner.

[0012] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0013] One embodiment of the present invention is an organic compound represented by general formula (G2).

[0014] [ka]

[0015] In the general formula (G2), X represents a sulfur atom or an oxygen atom, and R1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, a substituted or unsubstituted dibenzothiophenyl group, or a substituted or unsubstituted dibenzofuranyl group; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R 40 ~R 43 may be the same or different.

[0016] One embodiment of the present invention is an organic compound represented by general formula (G3).

[0017] [ka]

[0018] In the general formula (G3), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0019] One embodiment of the present invention is an organic compound represented by general formula (G4).

[0020] [ka]

[0021] In the general formula (G4), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0022] One embodiment of the present invention is an organic compound represented by general formula (G5).

[0023] [ka]

[0024] In the general formula (G5), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0025] One embodiment of the present invention is an organic compound represented by general formula (G6).

[0026] [ka]

[0027] In the general formula (G6), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , and R 40 ~R 43 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 34 , R 135 , and R 136 represents hydrogen (including deuterium), n represents an integer of 1 to 4, and when n is 2 or more, a plurality of R 40 ~R 43 may be the same or different.

[0028] One embodiment of the present invention is an organic compound represented by general formula (G7).

[0029] [ka]

[0030] In the general formula (G7), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 40 ~R 43 , and R 103 ~R 105 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 34 , R 135 , and R 136 represents hydrogen (including deuterium), n represents an integer of 1 to 4, and when n is 2 or more, a plurality of R 40 ~R 43 may be the same or different.

[0031] One embodiment of the present invention is an organic compound represented by general formula (G8).

[0032] [ka]

[0033] In the general formula (G8), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 36 , R 40 ~R 43 , and R 104~R 106 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0034] One embodiment of the present invention is an organic compound represented by general formula (G9).

[0035] [ka]

[0036] In the general formula (G9), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0037] One embodiment of the present invention is an organic compound represented by general formula (G10).

[0038] [ka]

[0039] In the general formula (G10), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0040] One embodiment of the present invention is an organic compound represented by general formula (G11).

[0041] [ka]

[0042] In the general formula (G11), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 and R 40 ~R 43 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0043] Another embodiment of the present invention is a light-emitting device using any of the above organic compounds. Also, another embodiment of the present invention is a light-receiving device using any of the above organic compounds.

[0044] Another embodiment of the present invention is a light-emitting device that includes a first electrode, a second electrode, and an organic compound layer sandwiched between the first electrode and the second electrode, the organic compound layer including an organic compound represented by General Formula (G1).

[0045] [ka]

[0046] In the general formula (G1), X represents a sulfur atom or an oxygen atom, and R 1 ~R 9 , R 20 ~R 26 , R 30 ~R 36 , and R 40 ~R 43 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0047] Another embodiment of the present invention is a light-emitting device including the light-emitting device having any of the above structures and a transistor or a substrate.

[0048] Another embodiment of the present invention is an electronic device including a light-emitting device having any of the above structures and a detection unit, an input unit, or a communication unit.

[0049] Another embodiment of the present invention is a lighting device including a light-emitting device having any of the above structures and a housing. Effect of the Invention

[0050] According to one embodiment of the present invention, a novel organic compound can be provided. According to another embodiment of the present invention, an organic compound that is easy to synthesize can be provided. According to another embodiment of the present invention, a novel light-emitting device can be provided. According to another embodiment of the present invention, a light-emitting device having a long operating lifetime can be provided. According to another embodiment of the present invention, a light-emitting device with a small voltage change during operation can be provided. According to another embodiment of the present invention, the manufacturing cost of the light-emitting device can be reduced. According to another embodiment of the present invention, a light-emitting device, electronic device, or lighting device with low power consumption can be provided.

[0051] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract effects other than these from the description in the specification, drawings, claims, etc. [Brief description of the drawings]

[0052] [Figure 1] 1A to 1E are diagrams illustrating the configuration of a light-emitting device. [Diagram 2] 2(A) and 2(B) are a top view and a cross-sectional view of a light emitting device. [Diagram 3] 3(A) to 3(D) are diagrams showing a light emitting device. [Figure 4] 4A to 4E are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Diagram 5] 5A to 5E are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 6] 6A to 6C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 7] 7A to 7C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 8]8A to 8C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 9] 9A to 9C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 10] 10A to 10C are cross-sectional views showing an example of a method for manufacturing a light-emitting device. [Figure 11] 11A to 11G are top views showing configuration examples of pixels. [Figure 12] 12A to 12I are top views showing configuration examples of pixels. [Figure 13] 13A and 13B are perspective views showing a configuration example of a display module. [Figure 14] 14(A) and 14(B) are cross-sectional views showing configuration examples of a light emitting device. [Figure 15] FIG. 15 is a perspective view showing a configuration example of a light emitting device. [Figure 16] Fig. 16A is a cross-sectional view showing a configuration example of a light-emitting device, Fig. 16B and Fig. 16C are cross-sectional views showing configuration examples of a transistor. [Figure 17] FIG. 17 is a cross-sectional view showing an example of the configuration of a light emitting device. [Figure 18] 18A to 18D are cross-sectional views showing configuration examples of a light emitting device. [Figure 19] 19A to 19D are diagrams illustrating examples of electronic devices. [Figure 20] 20A to 20F are diagrams illustrating examples of electronic devices. [Figure 21] 21A to 21G are diagrams illustrating examples of electronic devices. [Figure 22] FIG. 22 shows the 1H NMR spectrum of the organometallic complex prepared in the example. [Figure 23] FIG. 23 is a diagram illustrating the absorption spectrum and emission spectrum of the organometallic complex prepared in the example in a toluene solution. [Figure 24]FIG. 24 is a diagram for explaining the device structure of the sample according to the example. [Diagram 25] FIG. 25 is a diagram showing the luminance-current density characteristics of the sample according to the example. [Figure 26] FIG. 26 is a diagram showing the luminance-voltage characteristics of the sample according to the example. [Figure 27] FIG. 27 is a diagram showing the current density-voltage characteristics of the sample according to the example. [Figure 28] FIG. 28 is a diagram showing the external quantum efficiency-current density characteristics of the sample according to the example. [Figure 29] FIG. 29 is a diagram showing an electroluminescence spectrum of a sample according to an example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0053] (Embodiment 1) In this embodiment, an organic compound and a thin film which are one embodiment of the present invention will be described.

[0054] The organic compound in this embodiment is an arylamine derivative having the following structure: The arylamine derivative has sufficient hole transporting properties and a wide energy gap at the same time, and is a substance that can be very suitably used as a material for a light-receiving and light-emitting device.

[0055] <Example 1 of organic compounds> One embodiment of the present invention is an organic compound represented by general formula (G2).

[0056] [ka]

[0057] In the general formula (G2), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, a substituted or unsubstituted dibenzothiophenyl group, or a substituted or unsubstituted dibenzofuranyl group; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R 40 ~R 43 may be the same or different.

[0058] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0059] In addition, when X is an oxygen atom, the organic compound represented by the general formula (G2) has a smaller refractive index than when X is a sulfur atom. In other words, when used in a light-emitting device, the light extraction efficiency is increased, which is preferable. In addition, when X is an oxygen atom, sublimability is improved, and high purification by sublimation purification is possible, which is preferable. Therefore, when a film is formed by a vapor deposition process, a highly pure film can be obtained, and therefore a light-emitting device, a light-receiving device, and a light-receiving / light-emitting device with good reliability can be obtained. In addition, the organic compound of the present invention can be suitably used in a vapor deposition process.

[0060] In addition, in the organic compound represented by the general formula (G2), R 20 ~R 26 Naphthyl to which R is attached 40 ~R 43When the phenylene to which is bonded does not have a substituent, it becomes easy to highly purify the organic compound. In addition, since the steric hindrance is also small, the HOMO orbital is stabilized, and it becomes possible to obtain a highly reliable light-emitting device, light-receiving device, and light-receiving / light-emitting device. In addition, by substituting a naphthyl group at the end of the n-unit phenylene, the structural change between the ground state and the excited state is reduced. Therefore, the excited state becomes stable, the reliability of the device using the organic compound represented by general formula (G2) is improved, and high carrier mobility can be realized.

[0061] In addition, in the organic compound represented by the general formula (G2), a fluorenyl group, a dibenzofuranyl group or a dibenzothiophenyl group, and a naphthyl group are bonded to the central N atom, so that a skeleton consisting of two or more rings is arranged at the end of the molecular structure. By adopting this molecular structure, the change in the molecular structure between the ground state and the excited state is small, and the excited state is stable, so that when the organic compound of the present invention is used, a light-emitting device, a light-receiving device, and a light-receiving / emitting device with high reliability can be provided. In addition, by bonding a phenylene group to the amine, reliability is improved and carrier transportability is increased. By adopting this molecular structure, even if the three ends of the amine have a bulky skeleton consisting of two or more rings, an aniline skeleton with high hole transportability is included, so that the organic compound has high hole transportability. Therefore, when the organic compound of the present invention is used, a light-emitting device, a light-receiving device, and a light-receiving / emitting device with low driving voltage and low power consumption can be provided.

[0062] In addition, in the general formula (G2), by having a fluorenyl-4-amine skeleton in the molecular structure, it is possible to suppress the HOMO from becoming higher than necessary. Specifically, an organic compound having a HOMO level value lower than -5.4 eV can be provided. When the organic compound of the present invention is used in a layer adjacent to the light-emitting layer in a light-emitting device, the hole injection property to the light-emitting layer is improved by lowering the HOMO level value to -5.4 eV, and a light-emitting device with a low driving voltage can be provided. In addition, when the organic compound of the present invention is used in a carrier transport layer between the active layer and the electrode of a light-receiving device, the dark current is reduced, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used as a common hole transport layer for the light-emitting device and the light-receiving device, it is preferable because it is possible to provide a light-receiving device that combines a light-emitting device with a low driving voltage and a light-receiving device with a high sensitivity. In addition, since the two benzene rings of the fluorene skeleton are bonded at the ortho position to the amino group, the change in molecular structure between the ground state and the excited state is small, and the excited state is stable. Therefore, when the organic compound of the present invention is used in various devices, devices with high reliability can be provided.

[0063] By having a dibenzothiophene-4-amine skeleton or a dibenzofuran-4-amine skeleton, a highly reliable light-emitting device, a light-receiving device, or a light-receiving / light-emitting device can be provided. This is because by substituting the highly reactive hydrogen (or deuterium) bonded to the carbon adjacent to oxygen or sulfur with an amino group, the change in the molecular structure between the ground state and the excited state is reduced, and the excited state is stabilized, so that the organic compound itself is less likely to deteriorate, and the reliability of each device is improved. In addition, the dibenzothiophene-4-amine skeleton or the dibenzofuran-4-amine skeleton has a lower HOMO level value compared to a molecular structure in which an amine is bonded to the 2nd or 3rd position of dibenzothiophene or dibenzofuran. Therefore, when the organic compound of the present invention is used in a layer adjacent to the light-emitting layer, the hole injection property into the light-emitting layer is improved, and a light-emitting device with a low driving voltage can be provided. In addition, the dark current of the light-receiving device is reduced, and a light-receiving device with high sensitivity can be provided. Furthermore, when the layer is used as a hole transport layer common to both a light emitting device and a light receiving device, it is possible to provide a light receiving / emitting device that functions as both a light emitting device with a low driving voltage and a light receiving device with high sensitivity.

[0064] Having a dibenzothiophene-1-amine skeleton or a dibenzofuran-1-amine skeleton, it is possible to provide a highly reliable light-emitting device, a light-receiving device, or a light-receiving / light-emitting device. This is because the amino group is bonded to the ortho position of the biphenyl skeleton contained in the dibenzothiophene skeleton or the dibenzofuran skeleton, which makes the substitution position very bulky, so that the structural change between the ground state and the excited state is small, and the organic compound itself is less likely to deteriorate, which is thought to improve the reliability of the device.

[0065] In the above general formula (G2), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R105 , R 135 , or R 136 In the case of an alkyl group having 1 to 6 carbon atoms, for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, etc. can be used.

[0066] In addition, in the above general formula (G2), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , or R 136 In the case of a cycloalkyl group having 3 to 10 carbon atoms, for example, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a 1-methylcyclohexyl group, a cycloheptyl group, an adamantyl group, a bicyclo[2,2,2]octyl group, a norbornanyl group, etc. can be used.

[0067] In addition, in the above general formula (G2), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , or R 136In the case of an aryl group having 10 to 30 carbon atoms, for example, a naphthyl group, an anthracenyl group, a fluorenyl group, a dibenzothiophenyl group, a dibenzofuranyl group, a diphenylfluorenyl group, a spirobifluorenyl group, a pyrenyl group, a phenanthrenyl group, a triphenylenyl group, a perylenyl group, a tetracenyl group, a chrysenyl group, etc. can be used.

[0068] Specifically, for example, R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , or R 136 are represented by the following structural formulae (1-1) to (1-33): When the following structural formulae (1-21) to (1-33) are substituted, one of the carbons is a bond.

[0069] [ka]

[0070] Also, R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , or R 136 When has a substituent, the substituent is an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0071] <Organic compound example 2> One embodiment of the present invention is an organic compound represented by general formula (G3).

[0072] [ka]

[0073] In the general formula (G3), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0074] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0075] In the above general formula (G3), R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 is the R mentioned in <Example 1 of Organic Compound> m(m is an integer) may be taken into consideration.

[0076] In addition, in the general formula (G3), by having a spirobi[fluorene]-4-amine skeleton in the molecular structure, it is possible to suppress the HOMO from becoming higher than necessary. Specifically, an organic compound having a HOMO level value lower than -5.4 eV can be provided. When the organic compound of the present invention is used in a layer adjacent to the light-emitting layer by making the HOMO level value lower than -5.4 eV, the hole injection property into the light-emitting layer is improved, and a light-emitting device with a low driving voltage can be provided. In addition, when the organic compound of the present invention is used in a carrier transport layer between the active layer and the electrode of a light-receiving device, the dark current of the light-receiving device is reduced, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used as a common hole transport layer for the light-emitting device and the light-receiving device, it is preferable because it is possible to provide a light-receiving and light-emitting device that combines a light-emitting device with a low driving voltage and a light-receiving device with high sensitivity.

[0077] In addition, since the compound has a spirobi[fluorene] skeleton, it is possible to provide an organic compound having high heat resistance. Since devices using the organic compound of the present invention have excellent heat resistance, they can be suitably used as devices that are used under high temperatures, such as in-vehicle devices.

[0078] <Organic Compound Example 3> One embodiment of the present invention is an organic compound represented by general formula (G4).

[0079] [ka]

[0080] In the general formula (G4), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135, and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0081] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0082] In the above general formula (G4), R 1 , R 2 , R 6 ~R 9 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 is R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0083] In addition, in the general formula (G4), since the naphthyl group has a structure without a substituent, the terminal is a naphthyl group. This improves sublimability and facilitates high purification of the organic compound. In addition, since the steric hindrance is reduced, the HOMO orbital is stabilized, making it possible to obtain a highly reliable light-emitting device, light-receiving device, and light-receiving / emitting device. In addition, since the naphthyl group is substituted at the terminal of the n-unit phenylene, the structural change between the ground state and the excited state is reduced, so that the excited state is stabilized, and the reliability of the organic compound represented by the general formula (G4) is improved, and high carrier mobility can be realized.

[0084] <Organic Compound Example 4> One embodiment of the present invention is an organic compound represented by general formula (G5).

[0085] [ka]

[0086] In the general formula (G5), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0087] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0088] In the above general formula (G5), R 6 ~R 17 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 is the R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0089] In addition, in the general formula (G5), since the naphthyl group has a structure without a substituent, the terminal is a naphthyl group. This improves the sublimability of the organic compound, and facilitates high purification. In addition, the HOMO orbital is stabilized by reducing steric hindrance, so that it is possible to obtain a highly reliable light-emitting device, light-receiving device, and light-receiving / emitting device. In addition, by substituting a naphthyl group at the terminal of n consecutive phenylenes, the structural change between the ground state and the excited state is reduced, so that the excited state is stabilized, improving the reliability of the organic compound represented by the general formula (G5) and realizing high carrier mobility.

[0090] In addition, in the general formula (G5), by having a spirobi[fluorene]-4-amine skeleton in the molecular structure, the value of the HOMO level can be suppressed from becoming higher than necessary. Specifically, an organic compound having a HOMO level value lower than -5.4 eV can be provided. When the organic compound of the present invention is used in a layer adjacent to the light-emitting layer by making the HOMO level value lower than -5.4 eV, the hole injection property into the light-emitting layer is improved, and a light-emitting device with a low driving voltage can be provided. In addition, when the organic compound of the present invention is used in a carrier transport layer between the active layer and the electrode of a light-receiving device, the dark current of the light-receiving device is reduced, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used as a common hole transport layer for the light-emitting device and the light-receiving device, it is preferable because it is possible to provide a light-receiving and light-emitting device that combines a light-emitting device with a low driving voltage and a light-receiving device with high sensitivity.

[0091] In addition, since the compound has a spirobi[fluorene] skeleton, it is possible to provide an organic compound having high heat resistance. Since devices using the organic compound of the present invention have excellent heat resistance, they can be suitably used as devices that are used under high temperatures, such as in-vehicle devices.

[0092] <Organic Compound Example 5> One embodiment of the present invention is an organic compound represented by general formula (G6).

[0093] [ka]

[0094] In the general formula (G6), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , and R 40 ~R 43 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 34 , R 135 , and R 136 represents hydrogen (including deuterium), n represents an integer of 1 to 4, and when n is 2 or more, a plurality of R 40 ~R 43 may be the same or different.

[0095] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0096] In the above general formula (G6), R 1 , R 2 , R 34 , R 40 ~R 43 , R 135 , and R 136 is R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0097] In general formula (G6), all of the benzene rings of the fluorenyl group, dibenzofuranyl group or dibenzothiophenyl group, and naphthyl group have a structure that does not have a substituent. This molecular structure can enhance hole transport properties, making it possible to provide a device with a low driving voltage. As a result, a device with low power consumption can be provided. In addition, since the molecular structure does not become too large, a material with good sublimation properties and suitable for the deposition process can be provided.

[0098] <Example 6 of organic compounds> One embodiment of the present invention is an organic compound represented by general formula (G7).

[0099] [ka]

[0100] In the general formula (G7), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 40 ~R 43 , and R 103 ~R 105 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 34 , R 135 , and R 136 represents hydrogen (including deuterium), n represents an integer of 1 to 4, and when n is 2 or more, a plurality of R 40 ~R 43 may be the same or different.

[0101] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0102] In the above general formula (G7), R 6 ~R 17 , R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 is the R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0103] In general formula (G7), all of the benzene rings of the dibenzofuranyl group, dibenzothiophenyl group, and naphthyl group have a structure that does not have a substituent. By making the skeleton located at the end have a molecular structure that does not have a substituent in this way, it is possible to improve the hole transport property and provide a device with a low driving voltage. As a result, it is possible to provide a device with low power consumption. In addition, since the molecular structure does not become too large, it is possible to provide a material that has good sublimation properties and is suitable for the deposition process.

[0104] <Organic Compound Example 7> One embodiment of the present invention is an organic compound represented by general formula (G8).

[0105] [ka]

[0106] In the general formula (G8), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0107] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0108] In the above general formula (G8), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106 is the R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0109] In addition, by having a fluorenyl-1-amine skeleton in the molecular structure, it is possible to suppress the HOMO from becoming higher than necessary. Specifically, an organic compound having a HOMO level value lower than -5.4 eV can be provided. When the organic compound of the present invention is used in a layer adjacent to the light-emitting layer by making the HOMO level value lower than -5.4 eV, hole injection into the light-emitting layer is improved, and a light-emitting device with a low driving voltage can be provided. In addition, when the organic compound of the present invention is used in a carrier transport layer between the active layer and the electrode of a light-receiving device, the dark current of the light-receiving device is reduced, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used as a common hole transport layer for the light-emitting device and the light-receiving device, it is preferable because a light-receiving device that combines a light-emitting device with a low driving voltage and a light-receiving device with high sensitivity can be provided. In addition, by making the structure in which an amino group is substituted at the 1-position of fluorene, R 1 or R 2 Or both are arranged close to the amino group. As a result, it is possible to suppress the change in molecular structure between the excited state and the ground state. Therefore, the deterioration of the organic compound itself can be suppressed, and when such an organic compound is used, a highly reliable device can be obtained.

[0110] <Example 8 of organic compounds> One embodiment of the present invention is an organic compound represented by general formula (G9).

[0111] [ka]

[0112] In the general formula (G9), X represents a sulfur atom or an oxygen atom, and R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0113] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0114] In the above general formula (G9), R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106 is the R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0115] In addition, by having a spirobi[fluorene]-1-amine skeleton in the molecular structure, an organic compound exhibiting high heat resistance can be obtained. In addition, it is possible to suppress the value of the HOMO level from becoming higher than necessary. Specifically, an organic compound having a HOMO level value lower than -5.4 eV can be provided. Since the HOMO level value is lower than -5.4 eV, when the organic compound of the present invention is used in a layer adjacent to the light-emitting layer, the hole injection property into the light-emitting layer is improved, and a light-emitting device with a low driving voltage can be provided. In addition, when the organic compound of the present invention is used in a carrier transport layer between the active layer and the electrode of a light-receiving device, the dark current of the light-receiving device is reduced, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used as a common hole transport layer for the light-emitting device and the light-receiving device, it is preferable because a light-receiving device that combines a light-emitting device with a low driving voltage and a light-receiving device with a high sensitivity can be provided.

[0116] <Example 9 of organic compounds> One embodiment of the present invention is an organic compound represented by general formula (G10).

[0117] [ka]

[0118] In the general formula (G10), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 ~R 9 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43may be the same or different.

[0119] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0120] In the above general formula (G10), R 1 , R 2 , R 6 ~R 9 , R 30 ~R 36 , R 40 ~R 43 , and R 104 ~R 106 is R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0121] In addition, in the general formula (G10), since the naphthyl group has a structure without a substituent, the terminal is a naphthyl group. Therefore, the organic compound has high sublimability and can be easily purified. In addition, since the steric hindrance is reduced, the HOMO orbital is stabilized, and it is possible to obtain a highly reliable light-emitting device, light-receiving device, and light-receiving / emitting device. In addition, since the naphthyl group is substituted at the terminal of n consecutive phenylenes, the structural change between the ground state and the excited state is reduced, so that even when the excitons are diffused, the excited state of the organic compound of the present invention is stabilized, and the reliability of the device using the organic compound represented by the general formula (G10) is improved. In addition, a layer containing an organic compound represented by the general formula (G10) can achieve high carrier mobility, and a device containing an organic compound represented by the general formula (G10) consumes low power.

[0122] <Example 10 of organic compounds> One embodiment of the present invention is an organic compound represented by general formula (G11).

[0123] [ka]

[0124] In the general formula (G11), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 and R 40 ~R 43 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0125] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0126] In the above general formula (G11), R 1 , R 2 and R 40 ~R 43 is the R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0127] In general formula (G11), all of the benzene rings of the fluorenyl group, dibenzofuranyl group or dibenzothiophenyl group, and naphthyl group have a structure that does not have a substituent. By using such a molecular structure, it is possible to improve the hole transport property and provide a device with a low driving voltage. As a result, it is possible to provide a device with low power consumption. In addition, since the molecular structure is not too large, it is possible to provide a material that has good sublimation properties and is suitable for the deposition process.

[0128] For example, the organic compound according to one embodiment of the present invention can be suitably used in a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, or a capping layer in a light-emitting device. In particular, the organic compound according to the present invention can be suitably used in a hole transport layer in a light-emitting device. When used in a hole transport layer, a light-receiving device may be provided on the same plane as the light-emitting device, and the organic compound according to the present application can be suitably used as a transport layer common to the light-emitting device and the light-receiving device.

[0129] A structure in which the organic compound of one embodiment of the present invention is used for a light-emitting layer, a hole-transport layer, an electron-transport layer, or a capping layer of a light-emitting device or for a light-receiving device will be described in detail in Embodiment 2.

[0130] <Example> Next, specific examples of the organic compounds which have the structures represented by any of the above general formulas (G2) to (G11) and which are embodiments of the present invention will be described below.

[0131] The organic compounds represented by the following structural formulas (100) to (248) are examples of the organic compounds represented by the above general formulas (G2) to (G11) in which X is substituted with oxygen.

[0132] [ka]

[0133] [ka]

[0134] [ka]

[0135] [ka]

[0136] [ka]

[0137] [ka]

[0138] [ka]

[0139] [ka]

[0140] [ka]

[0141] [ka]

[0142] [ka]

[0143] [ka]

[0144] The organic compounds represented by the following structural formulas (300) to (449) are examples of the organic compounds represented by the above general formulas (G2) to (G11) in which X is substituted with sulfur.

[0145] [ka]

[0146] [ka]

[0147]

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[0148]

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[0149]

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[0150]

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[0151]

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[0153]

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[0154]

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[0155]

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[0156]

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[0157] The organic compounds represented by the structural formulas (100) to (248) and the structural formulas (300) to (449) are examples of the organic compounds represented by the general formulas (G2) to (G11); however, the organic compounds of one embodiment of the present invention are not limited thereto.

[0158] <Method of synthesizing organic compounds> A method for synthesizing an organic compound represented by the general formula (G2) or the general formula (G3) described above in <Example 1 of Organic Compound> will be described. In the details of the general formula (G2) or the general formula (G3), m (m is an integer) and all the substituents and partial structures can be referred to the description in <Example 1 of Organic Compound>.

[0159] <<Synthesis Example 1 of Organic Compound Represented by General Formula (G2)>> An example of a synthesis example of an organic compound represented by the general formula (G2) shown below will be shown below.

[0160] [ka]

[0161] The compound of general formula (G2) can be synthesized as shown in the following synthesis scheme (s-1) and synthesis scheme (s-2).

[0162] That is, according to the synthesis scheme (s-1), a fluorenyl-4-amine compound (organic compound 1) and a naphthalene compound (organic compound 2) are cross-coupled to obtain a fluorenyl-4-amine compound (organic compound 3). Next, according to the synthesis scheme (s-2), a fluorenyl-4-amine compound (organic compound 3) and a dibenzofuran compound or a dibenzothiophene compound (organic compound 4) are cross-coupled to obtain the target organic compound represented by the general formula (G2).

[0163] [ka]

[0164] [ka]

[0165] In the synthetic scheme (s-1) and the synthetic scheme (s-2), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , R 136 , X and n are omitted since they are the same as those shown above.

[0166] In addition, in the synthetic schemes (s-1) and (s-2), Q 1 and Q 2 each independently represents a chlorine atom, a bromine atom, an iodine atom, or a triflate group.

[0167] In the synthesis schemes (s-1) and (s-2), when the Buchwald-Hartwig reaction using a palladium catalyst is performed, palladium compounds such as bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, tetrakis(triphenylphosphine)palladium(0), and allylpalladium(II) chloride (dimer) are used as the palladium catalyst. As the ligand of the palladium catalyst, tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(orthotolyl)phosphine, and (S)-(6,6'-dimethoxybiphenyl-2,2'-diyl)bis(diisopropylphosphine) (abbreviation: cBRIDP) can be used. In addition, in the reaction, an organic base such as sodium tert-butoxide, an inorganic base such as potassium carbonate, cesium carbonate, or sodium carbonate can be used as a base. In the reaction, toluene, xylene, benzene, tetrahydrofuran, dioxane, and the like can be used as a solvent. The reagents that can be used in the reaction are not limited to the above-mentioned reagents. In addition, a compound in which an organotin group is bonded to the amino group of organic compound 1 can be used instead of organic compound 1 or organic compound 3.

[0168] In addition, in the synthesis scheme (s-1) and the synthesis scheme (s-2), the Ullmann reaction can be carried out using copper or a copper compound. In this reaction, copper or a copper compound can be used. Examples of the base used include inorganic bases such as potassium carbonate. Examples of solvents that can be used in this reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone (DMPU), toluene, xylene, benzene, and the like. In the Ullmann reaction, it is preferable to use DMPU or xylene, which have high boiling points, because a reaction temperature of 100°C or higher allows the target product to be obtained in a shorter time and with a higher yield. In addition, a reaction temperature of 150°C or higher is even more preferable, so it is more preferable to use DMPU. Reagents that can be used in this reaction are not limited to the above-mentioned reagents.

[0169] <<Synthesis example of organic compound 3>> The following describes a synthesis example of organic compound 3 that is different from the above.

[0170] [Synthesis Example 1 of Organic Compound 3] The synthesis of organic compound 3 can also be carried out by cross-coupling an aryl compound (organic compound 5) with an amine compound having a naphthalene skeleton (organic compound 6) as shown in the following synthesis scheme (s-3).

[0171] [ka]

[0172] In the synthetic scheme (s-3), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 40 ~R 43 , R 103 ~R 105 , and n are omitted since they are the same as those shown above.

[0173] In the synthetic scheme (s-3), Q3 represents a chlorine, bromine, iodine, or triflate group. In addition, the synthetic scheme (s-3) can use the same reaction conditions as those in the synthetic schemes (s-1) and (s-2).

[0174] [Synthesis Example 2 of Organic Compound 3] The organic compound 3 can also be synthesized by cross-coupling an arylamine compound (organic compound 7) with a naphthylboron compound or naphthylboronic acid (organic compound 8) as shown in the following synthesis scheme (s-4-1). When n is 2 or more, a synthesis method in which multiple phenylene groups are cross-coupled with each other may be used.

[0175] [ka]

[0176] In the synthetic scheme (s-4-1), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 40 ~R 43 , R 103 ~R 105 , and n are omitted because they are the same as those shown above. 150 ~R 151 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms; R 150 and R 151 may be bonded to each other to form a ring, and in that case, examples of the boron compound include pinacolborane compounds.

[0177] In addition, in the synthetic scheme (s-4-1), Q 4 represents a chlorine, bromine, iodine, or triflate group.

[0178] In the synthesis scheme (s-4-1), for example, palladium(II) acetate, tetrakis(triphenylphosphine)palladium(0), bis(triphenylphosphine)palladium(II) dichloride, or the like can be used as the palladium catalyst.

[0179] Furthermore, for example, tri(ortho-tolyl)phosphine, triphenylphosphine, tricyclohexylphosphine, or the like can be used as a ligand for the palladium catalyst.

[0180] Additionally, an organic base such as sodium tert-butoxide or an inorganic base such as potassium carbonate or sodium carbonate can be used as the base.

[0181] In addition, a mixed solvent of toluene and water, a mixed solvent of xylene and water, a mixed solvent of benzene and water, a mixed solvent of ethers such as ethylene glycol dimethyl ether, or 1,4-dioxane and water can be used as the reaction solvent. If the boronic acid or boron compound has high solubility in the aqueous phase, the reaction rate will be faster and the yield will be increased, so it is preferable to add water. On the other hand, when an ether is used as the solvent, it is expected that a high yield can be obtained without adding water.

[0182] In addition, a mixed solvent of toluene, water, and an alcohol such as ethanol, a mixed solvent of xylene, water, and an alcohol such as ethanol, a mixed solvent of benzene, water, and an alcohol such as ethanol, etc. can be used as the reaction solvent. In particular, a mixed solvent of toluene and water, a mixed solvent of toluene, water, and ethanol, and a mixed solvent of an ether such as ethylene glycol dimethyl ether and water are preferable.

[0183] [Synthesis Example 3 of Organic Compound 3] The synthesis method of organic compound 3 shown in the above scheme (s-4-1) can also be carried out according to the following scheme (s-4-2). Specifically, organic compound 3 can be obtained by cross-coupling an organoboron compound of an arylamine compound or a boronic acid of an arylamine compound (organic compound 9) with a halogenated naphthyl compound or naphthyl triflate (organic compound 10).

[0184] [ka]

[0185] In the synthetic scheme (s-4-2), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 40 ~R 43 , R 103 ~R 105 , and n are omitted because they are the same as those shown above. 152 ~R 153 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms; R 152 and R 153 may be bonded to each other to form a ring, and in that case, examples of the boron compound include pinacolborane compounds.

[0186] In the synthetic scheme (s-4-2), Q 5 represents a chlorine, bromine, iodine, or triflate group. In the synthetic scheme (s-4-2), the same reaction conditions as in the synthetic scheme (s-4-1) can be used.

[0187] Alternatively, instead of the organoboron compound or boronic acid, a cross-coupling reaction may be carried out between an organoaluminum compound, an organozirconium compound, an organozinc compound, an organotin compound, or the like and a halide or a compound having a triflate group.

[0188] <<Synthesis Example 2 of Organic Compound Represented by General Formula (G2)>> Moreover, the synthesis of the general formula (G2) can also be carried out according to the following synthesis scheme (s-5) and synthesis scheme (s-6).

[0189] That is, a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 11) can be obtained by cross-coupling a fluorenyl-4-amine compound (organic compound 1) with a dibenzofuran compound or a dibenzothiophene compound (organic compound 4) according to the synthesis scheme (s-5). Next, a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 11) with a naphthalene compound (organic compound 2) can be cross-coupled according to the synthesis scheme (s-6) to obtain the target organic compound represented by the general formula (G2).

[0190] [ka]

[0191] [ka]

[0192] In the synthetic scheme (s-5) and the synthetic scheme (s-6), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 103 ~R 105 , R 135 , R 136 , X and n are omitted since they are the same as those shown above.

[0193] In addition, in the synthetic schemes (s-5) and (s-6), Q 1 and Q 2each independently represents a chlorine atom, a bromine atom, an iodine atom, or a triflate group.

[0194] In the synthetic schemes (s-5) and (s-6), when the Buchwald-Hartwig reaction using a palladium catalyst or the Ullmann reaction using copper or copper oxide is performed, the same reaction conditions as those in the synthetic schemes (s-1) and (s-2) can be used.

[0195] <<Synthesis example of organic compound 11>> The synthesis of organic compound 11 can also be carried out by cross-coupling an aryl compound (organic compound 5) with a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 12) as shown in the following synthesis scheme (s-7).

[0196] [ka]

[0197] In the synthetic scheme (s-7), R 1 , R 2 , R 6 ~R 9 , R 30 ~R 34 , R 103 ~R 105 , R 135 , R 136 , and X are omitted since they are the same as those shown above.

[0198] In the synthetic scheme (s-7), Q 3 represents a chlorine, bromine, iodine, or triflate group. In the synthetic scheme (s-7), the same reaction conditions as those in the synthetic scheme (s-1) and the synthetic scheme (s-2) can be used.

[0199] <<Synthesis Example 3 of Organic Compound Represented by General Formula (G2)>> The synthesis of the organic compound represented by the general formula (G2) can also be carried out according to the following synthesis scheme (s-8) and synthesis scheme (s-9). That is, according to the synthesis scheme (s-8), a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 12) is cross-coupled with a naphthalene compound (organic compound 2) to obtain a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 13). Next, according to the synthesis scheme (s-9), a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 13) is cross-coupled with an aryl compound (organic compound 5) to obtain the target compound represented by the general formula (G2).

[0200] [ka]

[0201] [ka]

[0202] In the synthetic scheme (s-8) and the synthetic scheme (s-9), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 103 ~R 105 , R 135 , R 136 , X and n are omitted since they are the same as those shown above.

[0203] In addition, in the synthetic schemes (s-8) and (s-9), Q 1 and Q 3 each independently represents a chlorine atom, a bromine atom, an iodine atom, or a triflate group.

[0204] In the synthetic schemes (s-8) and (s-9), when the Buchwald-Hartwig reaction using a palladium catalyst or the Ullmann reaction using copper or copper oxide is performed, the same reaction conditions as those in the synthetic schemes (s-1) and (s-2) can be used.

[0205] <<Synthesis example of organic compound 13>> The following describes a synthesis example of organic compound 13 that is different from the above.

[0206] [Synthesis Example 1 of Organic Compound 13] The synthesis of organic compound 13 can also be carried out by cross-coupling a dibenzofuran compound or a dibenzothiophene compound (organic compound 4) with an amine compound having a naphthalene skeleton (organic compound 6) as shown in the following synthesis scheme (s-10).

[0207] [ka]

[0208] In the synthetic scheme (s-10), R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 135 , R 136 , X and n are omitted since they are the same as those shown above.

[0209] In the synthetic scheme (s-10), Q 2 represents a chlorine, bromine, iodine, or triflate group. In the synthetic scheme (s-10), the same reaction conditions as those in the synthetic scheme (s-1) and the synthetic scheme (s-2) can be used.

[0210] [Synthesis Example 2 of Organic Compound 13] In addition, when n≧1, the synthesis of organic compound 13 can also be carried out by cross-coupling a dibenzofuranylamine compound or a dibenzothiophenylamine compound (organic compound 14) with a naphthylboron compound or a naphthylboronic acid (organic compound 8) as shown in the following synthesis scheme (s-11-1).

[0211] [ka]

[0212] In the synthetic scheme (s-11-1), R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 135 , R 136 , X and n are omitted since they are the same as those shown above.

[0213] In the synthetic scheme (s-11-1), Q 6 represents a chlorine, bromine, iodine, or triflate group. In the synthetic scheme (s-11-1), the same reaction conditions as in the synthetic scheme (s-4-1) can be used.

[0214] [Synthesis Example 3 of Organic Compound 13] The synthesis method of organic compound 13 shown in the above scheme (s-11-1) can also be carried out according to the following scheme (s-11-2). That is, organic compound 13 may be obtained by cross-coupling an organoboron compound of a dibenzofuranylamine compound or an organoboron compound of a dibenzothiophenylamine compound, or a boronic acid of a dibenzofuranylamine compound or a boronic acid of a dibenzothiophenylamine compound (organic compound 15) with a halide of a naphthalene compound or a triflate-substituted naphthalene compound (organic compound 10).

[0215] [ka]

[0216] In the synthetic scheme (s-11-2), R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 135 , R 136 , X and n are omitted because they are the same as those shown above. 154 ~R 155 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms; R 154 and R 155 may be bonded to each other to form a ring, and in that case, examples of the boron compound include pinacolborane.

[0217] In the synthetic scheme (s-11-2), Q 5 represents a chlorine, bromine, iodine, or triflate group. In the synthetic scheme (s-11-2), the same reaction conditions as in the synthetic scheme (s-4-1) can be used.

[0218] Further, a cross-coupling reaction may be carried out using an organoaluminum, organozirconium, organozinc or organotin compound, etc., instead of an organoboron compound or boronic acid.

[0219] <<Synthesis Example 4 of Organic Compound Represented by General Formula (G2)>> In addition, when n≧1, the synthesis of the organic compound represented by the general formula (G2) can also be carried out according to the following synthesis schemes (s-12-1) and (s-12-2). That is, the target organic compound represented by the general formula (G2) can be obtained by cross-coupling an arylamine compound (organic compound 16) with a naphthyl boron compound or naphthyl boronic acid (organic compound 8) according to the synthesis scheme (s-12-1). In addition, the target organic compound represented by the general formula (G2) can be obtained by cross-coupling an organoboron compound of an arylamine compound or a boronic acid of an arylamine compound (organic compound 17) with a halide or triflate-substituted naphthalene compound (organic compound 10) according to the synthesis scheme (s-12-2).

[0220] [ka]

[0221] [ka]

[0222] In the synthetic scheme (s-12-1) and the synthetic scheme (s-12-2), R 1 , R 2 , R 6 ~R 9 , R 20 ~R 26 , R 30 ~R 34 , R 103 ~R 105 , R 135 , R 136 , R 150 ~R 151 , X and n are omitted because they are the same as those shown above. 156 ~R 157 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms; R 156 and R 157may be bonded to each other to form a ring, and in that case, examples of the boron compound include pinacolborane compounds.

[0223] In the synthetic scheme (s-12-1) and the synthetic scheme (s-12-2), Q 5 and Q 7 represents a chlorine, bromine, iodine, or triflate group. In the synthetic schemes (s-12-1) and (s-12-2), the same reaction conditions as in the synthetic scheme (s-4-1) can be used.

[0224] Alternatively, a cross-coupling reaction may be carried out using an organoaluminum, organozirconium, organozinc or organotin compound, instead of an organoboron compound or boronic acid.

[0225] <<Synthesis Example 1 of Organic Compound Represented by General Formula (G3)>> A synthesis example of an organic compound represented by the following general formula (G3) is shown below.

[0226] [ka]

[0227] The synthesis of the general formula (G3) can be carried out using the following synthesis scheme (s-13) and synthesis scheme (s-14).

[0228] [ka]

[0229] [ka]

[0230] In the synthetic scheme (s-13) and the synthetic scheme (s-14), R 6 ~R 17 , R 20 ~R 26 , R30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 , Q 1 , Q 2 , X and n are omitted since they are the same as those shown above.

[0231] In the synthetic schemes (s-13) and (s-15), the same reaction conditions as those in the synthetic schemes (s-1) and (s-2) can be used.

[0232] <<Synthesis example of organic compound 19>> The following describes a synthesis example of organic compound 19, which is different from the above.

[0233] [Synthesis Example 1 of Organic Compound 19] The organic compound 19 can be synthesized according to the following synthesis scheme (s-15).

[0234] [ka]

[0235] [Synthesis Example 2 of Organic Compound 19] The organic compound 19 can be synthesized according to the following synthesis scheme (s-16-1).

[0236] [ka]

[0237] [Synthesis Example 3 of Organic Compound 19] The organic compound 19 can be synthesized according to the following synthesis scheme (s-16-2).

[0238] [ka]

[0239] <<Synthesis Example 2 of Organic Compound Represented by General Formula (G3)>> The organic compound represented by the general formula (G3) can also be synthesized according to the following synthesis schemes (s-17) and (s-18).

[0240] [ka]

[0241] [ka]

[0242] <<Synthesis example of organic compound 22>> The following describes a synthesis example of organic compound 22 that is different from the above.

[0243] [Synthesis Example 1 of Organic Compound 22] The organic compound 22 can be synthesized according to the following synthesis scheme (s-19).

[0244] [ka]

[0245] <<Synthesis Example 3 of Organic Compound Represented by General Formula (G3)>> The organic compound represented by the general formula (G3) can be synthesized using the following synthesis scheme (s-20).

[0246] [ka]

[0247] <<Synthesis Example 4 of Organic Compound Represented by General Formula (G3)>> The organic compound represented by the general formula (G3) can be synthesized by using the following synthesis scheme (s-21-1).

[0248] [ka]

[0249] <<Synthesis Example 5 of Organic Compound Represented by General Formula (G3)>> The organic compound represented by the general formula (G3) can be synthesized by using the following synthesis scheme (s-21-2).

[0250] [ka]

[0251] In addition, in the synthetic schemes (s-13) to (s-15), the synthetic schemes (s-16-1) to (s-16-2), the synthetic schemes (s-17) to (s-19), the synthetic scheme (s-20), and the synthetic schemes (s-21-1) to (s-21-2), R 6 ~R 17 , R 20 ~R 26 , R 30 ~R 34 , R 40 ~R 43 , R 103 ~R 105 , R 135 , and R 136 , Q 1 ~Q 2 , Q 5 , X and n are omitted because they are the same as those shown above. 158 ~R 159 and R 160 ~R 161 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms; R 156 and R 157 and R 160 and R 161 may be bonded to each other to form a ring, and in that case, examples of the boron compound include pinacolborane compounds.

[0252] In the synthetic schemes (s-15), (s-16-1), (s-19), (s-20), and (s-21-1), Q 8 , Q 9 and Q 10 represents a chlorine, bromine, iodine, or triflate group.

[0253] Further, a cross-coupling reaction may be carried out using an organoaluminum compound, an organozirconium compound, an organozinc compound, an organotin compound, or the like, instead of the organoboron compound or the boronic acid compound.

[0254] In the synthetic schemes (s-13) to (s-15), (s-16-1), (s-16-2), (s-17) to (s-20), (s-21-1), and (s-21-2), the same reaction conditions as those in the synthetic schemes (s-1) to (s-3), (s-4-1) to (s-4-2), (s-5) to (s-7), (s-8) to (s-10), (s-11-1) to (s-11-2), and (s-12-1) to (s-12-2) can be used.

[0255] The synthesis method of the organic compound represented by general formula (G3) is not limited to the above-mentioned synthesis schemes (s-13) to (s-15), synthesis scheme (s-16-1), synthesis scheme (s-16-2), synthesis scheme (s-17) to (s-19), synthesis scheme (s-20), and synthesis scheme (s-21-1) and synthesis scheme (s-21-2).

[0256] The above is a description of the synthesis method for the general formula (G3). The synthesis method for the general formula (G3) is not limited to these, and any reaction or reagent other than those described can be applied.

[0257] <<Examples of intermediates>> Specific examples of intermediates produced in the synthesis examples of the organic compound represented by the above general formula (G2) are shown below.

[0258] [Specific examples of organic compound 3 and organic compound 19] Next, specific examples of organic compounds that can be used as the above organic compound 3 and organic compound 19 are shown below.

[0259] [ka]

[0260] [ka]

[0261] [Specific examples of organic compound 11 and organic compound 22] Next, specific examples of organic compounds that can be used as the organic compound 11 and the organic compound 22 are shown below.

[0262] [ka]

[0263] [ka]

[0264] [ka]

[0265] [ka]

[0266] [Specific examples of organic compound 13] Next, specific examples of organic compounds that can be used as the organic compound 13 are shown below.

[0267] [ka]

[0268] [ka]

[0269] [ka]

[0270] [ka]

[0271] [ka]

[0272] [ka]

[0273] The synthesis method of the organic compound represented by the general formula (G2) is not limited to the above-mentioned synthesis schemes (s-1) to (s-3), synthesis schemes (s-4-1) to (s-4-2), synthesis schemes (s-5) to (s-7), synthesis schemes (s-8) to (s-10), synthesis schemes (s-11-1) to (s-11-2), and synthesis schemes (s-12-1) to (s-12-2).

[0274] The above is a description of the synthesis method for the general formula (G2). The synthesis method for the general formula (G2) is not limited to these, and any reaction or reagent other than those described can be applied.

[0275] (Embodiment 2) In this embodiment mode, a structure of a light-emitting device using the organic compound described in Embodiment Mode 1 will be described with reference to FIGS.

[0276] <Basic structure of light-emitting devices> The basic structure of a light-emitting device will be described. Figure 1(A) shows a light-emitting device having a structure (single structure) in which an organic compound (EL) layer including a light-emitting layer is disposed between a pair of electrodes. Specifically, the device has a structure in which an organic compound layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0277] 1B shows a light-emitting device having a stacked structure (tandem structure) in which a plurality of organic compound layers (103a, 103b) serving as EL layers (two layers in FIG. 1B) are disposed between a pair of electrodes, and a charge generation layer 106 is disposed between the organic compound layer 103a and the organic compound layer 103b. A light-emitting device having a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0278] The charge generation layer 106 has a function of injecting electrons into one organic compound layer (one of the organic compound layer 103a and the organic compound layer 103b) and injecting holes into the other organic compound layer (the other of the organic compound layer 103b and the organic compound layer 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Therefore, in FIG. 1B, when a voltage is applied to the first electrode 101 so that the potential of the first electrode 101 is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a and holes are injected into the organic compound layer 103b.

[0279] From the viewpoint of light extraction efficiency, the charge generation layer 106 is preferably transparent to visible light (specifically, the visible light transmittance of the charge generation layer 106 is 40% or more). The charge generation layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102.

[0280] FIG. 1C shows a stacked structure of an organic compound layer 103 of a light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are stacked in this order over the first electrode 101. Note that the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having different light emission colors are stacked. For example, a light-emitting layer containing a red light-emitting substance, a light-emitting layer containing a green light-emitting substance, and a light-emitting layer containing a blue light-emitting substance are stacked, or a layer having a carrier transport material is interposed between the light-emitting layers. Alternatively, a light-emitting layer containing a yellow light-emitting substance and a light-emitting layer containing a blue light-emitting substance may be combined. However, the stacked structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having the same light-emitting color are stacked. For example, a first light-emitting layer containing a blue light-emitting material and a second light-emitting layer containing a blue light-emitting material are stacked, or a layer having a carrier transporting material is interposed between the first light-emitting layer and the second light-emitting layer. In the case of a structure in which a plurality of light-emitting layers having the same light-emitting color are stacked, reliability may be improved more than that of a single layer structure. In addition, even in the case of a tandem structure having a plurality of EL layers as shown in FIG. 1B, each EL layer is stacked in order from the anode side as described above. In addition, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the organic compound layer 103 is stacked in the reverse order. Specifically, the structure is such that 111 on the first electrode 101, which is a cathode, is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0281] The light-emitting layer 113 included in the organic compound layers (103, 103a, 103b) that are EL layers each contains a light-emitting substance and a combination of multiple substances, and can be configured to obtain fluorescent or phosphorescent light of a desired light emission color. The light-emitting layer 113 may also have a stacked structure with different light-emitting colors. In this case, different materials may be used for the light-emitting substance and other substances used in each stacked light-emitting layer. A structure in which different light-emitting colors are obtained from each of the multiple organic compound layers (103a, 103b) shown in Figure 1 (B) may also be used. In this case, different materials may be used for the light-emitting substance and other substances used in each light-emitting layer.

[0282] In addition, in a light-emitting device according to one embodiment of the present invention, for example, the first electrode 101 shown in FIG. 1C is a reflective electrode, the second electrode 102 is a semi-transmissive and semi-reflective electrode, and a micro-optical resonator (microcavity) structure is formed, whereby light emission from the light-emitting layer 113 included in the organic compound layer 103 is resonated between both electrodes, and the light emitted from the second electrode 102 can be strengthened. Therefore, it is easy to realize high definition. In addition, the light emission intensity in the front direction of a specific wavelength can be strengthened, and therefore low power consumption can be achieved.

[0283] In addition, when the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a conductive material having reflectivity and a conductive material having light transmission (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to mλ / 2 (where m is an integer of 1 or more) or its vicinity, for the wavelength λ of light obtained from the light-emitting layer 113.

[0284] In order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained to (2m'+1)λ / 4 (where m' is an integer of 1 or more) or close thereto. Note that the light-emitting region referred to here refers to a recombination region of holes and electrons in the light-emitting layer 113.

[0285] By carrying out such optical adjustment, it is possible to narrow the spectrum of the specific monochromatic light obtained from the light-emitting layer 113, and to obtain light emission with excellent color purity.

[0286] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be strictly said to be the total thickness from the reflection area in the first electrode 101 to the reflection area in the second electrode 102. However, since it is difficult to strictly determine the reflection area in the first electrode 101 and the second electrode 102, it is assumed that the above-mentioned effect can be sufficiently obtained by assuming any position of the first electrode 101 and the second electrode 102 as the reflection area. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can be strictly said to be the optical distance between the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer from which the desired light is obtained. However, since it is difficult to strictly determine the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer from which the desired light is obtained, it is assumed that the above-mentioned effect can be sufficiently obtained by assuming any position of the first electrode 101 as the reflection area and any position of the light-emitting layer from which the desired light is obtained as the light-emitting area.

[0287] The light-emitting device shown in Figure 1(D) has a tandem structure. The tandem structure can be used to produce a light-emitting device capable of emitting high-luminance light. In addition, the tandem structure can reduce the current required to obtain the same luminance compared to a single structure, and therefore can improve reliability. In addition, power consumption can be reduced.

[0288] The light-emitting device shown in FIG. 1E is an example of the light-emitting device with the tandem structure shown in FIG. 1B, and has a structure in which three organic compound layers (103a, 103b, 103c) are stacked with charge generating layers (106a, 106b) sandwiched therebetween, as shown in the figure. The three organic compound layers (103a, 103b, 103c) each have a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of the light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be red, green, or yellow, and the light-emitting layer 113c can be blue, but it is also possible to make the light-emitting layer 113a red, the light-emitting layer 113b blue, green, or yellow, and the light-emitting layer 113c red.

[0289] In the light-emitting device according to one embodiment of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is an electrode having translucency (such as a transparent electrode or a semi-transparent / semi-reflective electrode). When the electrode having translucency is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. When the electrode is a semi-transparent / semi-reflective electrode, the visible light reflectance of the semi-transparent / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, these electrodes have a resistivity of 1×10 -2 It is preferable to set it to Ωcm or less.

[0290] In the above-described light-emitting device according to one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%. -2 It is preferable to set it to Ωcm or less.

[0291] <Specific structure of light-emitting device> Next, a specific structure of a light-emitting device according to one embodiment of the present invention will be described. In addition, a tandem structure will be described here with reference to FIG. 1(D). The single-structure light-emitting devices shown in FIG. 1(A) and FIG. 1(C) also have the same EL layer structure. When the light-emitting device shown in FIG. 1(D) has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive and semi-reflective electrode. Therefore, a single or multiple desired electrode materials can be used to form a single layer or a stacked layer. The second electrode 102 is formed by selecting an appropriate material after forming the organic compound layer 103b.

[0292] <First Electrode and Second Electrode> As the material for forming the first electrode 101 and the second electrode 102, the following materials can be used in appropriate combination as long as the above-mentioned functions of both electrodes are satisfied. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used appropriately. Specific examples include In-Sn oxide (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide, and In-W-Zn oxide. In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these in appropriate combinations, can also be used. Other examples that can be used include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)) that are not listed above, rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing appropriate combinations of these, as well as graphene.

[0293] 1(D), when the first electrode 101 is an anode, the hole injection layer 111a and the hole transport layer 112a of the organic compound layer 103a are successively laminated by a vacuum deposition method on the first electrode 101. After the organic compound layer 103a and the charge generation layer 106 are formed, the hole injection layer 111b and the hole transport layer 112b of the organic compound layer 103b are similarly successively laminated on the charge generation layer 106.

[0294] <Hole injection layer> The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101, which is an anode, and the charge generation layer (106, 106a, 106b) to the organic compound layer (103, 103a, 103b), and is a layer that contains an organic acceptor material and a material with high hole injection properties.

[0295] An organic acceptor material is a material that can generate holes in an organic compound by separating charges between the organic acceptor material and another organic compound whose LUMO level and HOMO level are close to each other.

[0296] The values ​​of the HOMO level and the LUMO level used in this specification can be determined by electrochemical measurements. Representative examples of electrochemical measurements include cyclic voltammetry (CV) measurements and differential pulse voltammetry (DPV) measurements.

[0297] In cyclic voltammetry (CV) measurements, the HOMO and LUMO levels (E) are determined by measuring the oxidation peak potential (E pa ), and reduction peak potential (E pc In the measurement, the HOMO level is obtained from potential scanning in the positive direction, and the LUMO level is obtained from potential scanning in the negative direction. The scan speed in the measurement is 0.1 V / s.

[0298] The specific procedure for calculating the HOMO and LUMO levels is described below. The oxidation peak potential (E pa ), and reduction peak potential (E pc ) to obtain the standard redox potential (E o )(=(E pa +E pc ) / 2) and calculate the potential energy (E x ) to obtain the values ​​of the HOMO and LUMO levels (E) (=E x -E o ) can be calculated respectively.

[0299] The above shows the case where a reversible redox wave is obtained. However, when an irreversible redox wave is obtained, the oxidation peak potential (E pa The reduction peak potential (E pc ) and the standard redox potential (E o ) to one decimal place. In addition, the reduction peak potential (E pc ) plus a certain value (0.1 eV) is taken as the oxidation peak potential (E pa ) and the standard redox potential (E o ) to one decimal place.

[0300] As the organic acceptor material, compounds having an electron-withdrawing group (a halogen group or a cyano group), such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives, can be used. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used. Among organic acceptor materials, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are particularly suitable because they have high acceptability and stable film quality against heat. In addition, radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group) [3] are also preferred because they have very high electron-accepting properties, and specifically, α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc. can be used.

[0301] As a material with high hole injection properties, an oxide of a metal belonging to Groups 4 to 8 in the periodic table (such as transition metal oxides, such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide) can be used. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among the above, molybdenum oxide is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle. In addition, phthalocyanine-based compounds such as phthalocyanine (abbreviation: HPc) or copper phthalocyanine (abbreviation: CuPc) can be used.

[0302] In addition to the above materials, the following low molecular weight compounds are also available: 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-tris[N Aromatic amine compounds such as -(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1) can be used.

[0303] Also, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD), etc. can be used. Alternatively, polymer compounds to which an acid has been added, such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS) and polyaniline / (polystyrenesulfonic acid) (PAni / PSS), etc. can also be used.

[0304] As the material with high hole injection properties, a mixed material containing a hole transport material and the above-mentioned organic acceptor material (electron accepting material) can also be used. In this case, electrons are extracted from the hole transport material by the organic acceptor material, generating holes in the hole injection layer 111, and the holes are injected into the light emitting layer 113 via the hole transport layer 112. The hole injection layer 111 may be formed as a single layer made of a mixed material containing a hole transport material and an organic acceptor material (electron accepting material), or may be formed by laminating the hole transport material and the organic acceptor material (electron accepting material) in separate layers.

[0305] In addition, the hole transport material has a hole mobility of 1×10 at a square root of the electric field strength [V / cm] of 600. -6 cm 2 A substance having a hole mobility of / Vs or more is preferable. Note that other substances can be used as long as they have a higher hole transporting property than an electron transporting property.

[0306] For example, an organic compound represented by the following general formula (G1) can be used as a material having a hole transporting property.

[0307] [ka]

[0308] In the general formula (G1), X represents a sulfur atom or an oxygen atom, and R 1 ~R 9 , R 20 ~R 26 , R 30 ~R 36 , and R 40 ~R 43 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, multiple R 40 ~R 43 may be the same or different.

[0309] Also, R m (m is an integer) has a substituent, the substituent and R m (m is an integer) do not bond to each other to form a ring.

[0310] In the above general formula (G1), R 1 ~R 9 , R 20 ~R 26 , R 30 ~R 36 , and R 40 ~R 43 is the R mentioned in <Example 1 of Organic Compound> m (m is an integer) may be taken into consideration.

[0311] As a material having a hole-transport property, any of the organic compounds represented by General Formula (G2) to General Formula (G11), which are one embodiment of the present invention, can be used.

[0312] As the hole transporting material, a material having a high hole transporting property such as a compound having a π-electron-rich heteroaromatic ring (for example, a carbazole derivative, a furan derivative, or a thiophene derivative) and an aromatic amine (an organic compound having an aromatic amine skeleton) is preferable. The compound of the first embodiment has a hole transporting property, and therefore can also be used as the hole transporting material.

[0313] Examples of the carbazole derivative (organic compound having a carbazole ring) include bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) and aromatic amines having a carbazolyl group.

[0314] Specific examples of the bicarbazole derivative (e.g., 3,3'-bicarbazole derivative) include 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP).

[0315] Specific examples of the aromatic amine having a carbazolyl group include 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBiF), and Name: PCBBiF), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]bis(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluorene -4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluorene )-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluoren)-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-Dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 3-[N-(9-phenyl 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), N-(9,9-spirobi[9H-fluoren]-2-yl)-N,9-diphenylcarbazol-3-amine (abbreviation: PCASF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4- (Carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02), etc.,

[0316] In addition to the above, examples of the carbazole derivative include 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), and 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA).

[0317] Specific examples of the furan derivatives (organic compounds having a furan ring) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0318] Specific examples of the thiophene derivative (organic compound having a thiophene ring) include organic compounds having a thiophene ring, such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0319] Specific examples of the aromatic amine include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP ... Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9H-fluoren]-2-yl) -N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenyla amino]triphenylamine (abbreviation: m-MTDATA), N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2- d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4', 4''-Diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-( 7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-Dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), N,N-bis(9,9-dimethyl-9H-fluorene-2- N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, and the like can be mentioned.

[0320] Other examples of the hole transport material that can be used include polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD), etc. Alternatively, polymer compounds to which an acid has been added, such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS) and polyaniline / (polystyrenesulfonic acid) (PAni / PSS), etc., can also be used.

[0321] However, the hole transporting material is not limited to the above, and one or a combination of various known materials may be used as the hole transporting material.

[0322] The hole injection layers (111, 111a, 111b) can be formed using various known film formation methods, for example, a vacuum deposition method.

[0323] <Hole transport layer> The hole transport layers (112, 112a, 112b) are layers that transport holes injected from the first electrode 101 by the hole injection layers (111, 111a, 111b) to the light emitting layers (113, 113a, 113b). The hole transport layers (112, 112a, 112b) are layers that contain a hole transport material. Therefore, the hole transport materials that can be used for the hole injection layers (111, 111a, 111b) can be used for the hole transport layers (112, 112a, 112b).

[0324] In the light-emitting device according to one embodiment of the present invention, the light-emitting layer (113, 113a, 113b) can be formed using the same organic compound as that of the hole-transport layer (112, 112a, 112b). It is more preferable to use the same organic compound for the hole-transport layer (112, 112a, 112b) and the light-emitting layer (113, 113a, 113b) because holes can be efficiently transported from the hole-transport layer (112, 112a, 112b) to the light-emitting layer (113, 113a, 113b).

[0325] <Light-emitting layer> The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting substance. As the light-emitting substance that can be used for the light-emitting layers (113, 113a, 113b), a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red can be appropriately used. When the light-emitting layer has multiple light-emitting layers, a structure that emits different light colors (for example, white light emission obtained by combining light-emitting colors that are complementary to each other) can be obtained by using different light-emitting substances for each light-emitting layer. Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances may be used.

[0326] Furthermore, the light-emitting layers (113, 113a, 113b) may contain one or more types of organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0327] In addition, when a plurality of host materials are used in the light-emitting layer (113, 113a, 113b), it is preferable to use a substance having a larger energy gap than the existing guest material and the first host material as the second host material to be added. In addition, it is preferable that the lowest singlet excitation energy level (S1 level) of the second host material is higher than the S1 level of the first host material, and the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the guest material. In addition, it is preferable that the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the first host material. With such a configuration, an exciplex can be formed by two types of host materials. In addition, in order to efficiently form an exciplex, it is particularly preferable to combine a compound that easily receives holes (hole transporting material) and a compound that easily receives electrons (electron transporting material). In addition, with this configuration, high efficiency, low voltage, and long life can be simultaneously achieved.

[0328] As the organic compound used as the host material (including the first host material and the second host material), as long as it satisfies the conditions as a host material used in the light-emitting layer, examples of the organic compound include a hole transporting material that can be used in the hole transporting layer (112, 112a, 112b) described above, or an electron transporting material that can be used in the electron transporting layer (114, 114a, 114b) described below, and may be an exciplex consisting of multiple types of organic compounds (the first host material and the second host material described above). Note that an exciplex (also called an exciplex) that forms an excited state with multiple types of organic compounds has an extremely small difference between the S1 level and the T1 level, and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy. In addition, as a combination of multiple types of organic compounds that form an exciplex, for example, one of them has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. As a combination for forming an exciplex, one of the materials may be a phosphorescent material such as an iridium, rhodium, or platinum-based organometallic complex or metal complex. The organic compound described in the first embodiment has an electron transporting property and can be effectively used as a first host material. In addition, the organic compound has a hole transporting property and can be effectively used as a second host material.

[0329] There are no particular limitations on the light-emitting substances that can be used in the light-emitting layers (113, 113a, 113b), and light-emitting substances that convert singlet excitation energy into light emission in the visible light range, or light-emitting substances that convert triplet excitation energy into light emission in the visible light range can be used.

[0330] <Light-emitting material that converts singlet excitation energy into light> Examples of luminescent materials that can be used in the luminescent layers (113, 113a, 113b) and convert singlet excitation energy into luminescence include the following fluorescent materials (fluorescent luminescent materials). For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives are listed. Pyrene derivatives are particularly preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N, N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc.

[0331] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)phenyl N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'- (9-Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), and the like can be used.

[0332] In addition, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[ 4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), Rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinit (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhA FD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), 1,6BnfAPrn-0 3, N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, 1,6BnfAPrn-03, etc. can be used.

[0333] <Light-emitting material that converts triplet excitation energy into light> Next, examples of luminescent substances that can be used in the light-emitting layer 113 and that convert triplet excitation energy into luminescence include substances that emit phosphorescence (phosphorescent luminescent substances) and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0334] A phosphorescent material is a compound that exhibits phosphorescence but does not exhibit fluorescence in a temperature range from low temperature (e.g., 77 K) to room temperature (i.e., 77 K to 313 K). The phosphorescent material preferably has a metal element with a large spin-orbit interaction, and examples of the phosphorescent material include an organometallic complex, a metal complex (platinum complex), and a rare earth metal complex. Specifically, a transition metal element is preferable, and it is particularly preferable to have a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)). Among these, it is preferable to have iridium, since it can increase the transition probability related to the direct transition between the singlet ground state and the triplet excited state.

[0335] <Phosphorescent material (450nm to 570nm: blue or green)> Examples of phosphorescent substances that exhibit blue or green light and have an emission spectrum with a peak wavelength of 450 nm or more and 570 nm or less include the following substances.

[0336] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato] Organometallic complexes with a 4H-triazole ring, such as iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1- Organometallic complexes containing a 1H-triazole ring, such as methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(II I) (abbreviation: [Ir(dmpimpt-Me)3]), organometallic complexes with an imidazole ring, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) picolinate (abbreviation: FIrpic), and bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2']iridium(III) picolinate (abbreviation: FIrpic). 2’}Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’] Examples include organometallic complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviation: FIr(acac)).

[0337] <Phosphorescent material (495nm to 590nm: green or yellow)> Examples of phosphorescent substances that exhibit green or yellow light and have an emission spectrum with a peak wavelength of 495 nm or more and 590 nm or less include the following substances.

[0338] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm Organometallic iridium compounds having a pyrimidine ring, such as (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]). iridium complexes with pyrazine rings, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinate)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinate)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]); tris(2-phenylpyrazinate-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’)iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl -κN)phenyl-κC], [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) Iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC] Organometallic iridium complexes with a pyridine ring, such as [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), and bis(2,4-diphenyl-1,3-oxazolato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(bt)2(acac)]), as well as rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0339] <Phosphorescent material (570nm to 750nm: yellow or red)> Examples of phosphorescent substances that exhibit yellow or red light and have an emission spectrum with a peak wavelength of 570 nm or more and 750 nm or less include the following substances.

[0340] For example, pyrimidinate such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and (dipivaloylmethanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]). Organometallic complexes containing an imidine ring, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κN)phenyl-κC) 2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis(2-methyl-3-phenylquinoxalinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ Organometallic complexes with pyrazine rings such as (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC] (2,4-pentanedionato-κ 2These include organometallic complexes with pyridine rings such as (O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: [PtOEP]), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0341] ≪TADF material≫ The following materials can be used as TADF materials. TADF materials are materials in which the difference between the S1 level and the T1 level is small (preferably 0.2 eV or less), the triplet excited state can be upconverted to the singlet excited state by a small amount of thermal energy (reverse intersystem crossing), and the material efficiently emits light (fluorescence) from the singlet excited state. Conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited energy level and the singlet excited energy level of 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. The delayed fluorescence in TADF materials refers to light emission that has a spectrum similar to that of normal fluorescence, but has a significantly long lifespan. The lifespan is 1×10 -6 seconds or 1×10 -3 More than seconds.

[0342] Note that the TADF material can also be used as an electron transporting material, a hole transporting material, or a host material.

[0343] Examples of TADF materials include fullerene and its derivatives, acridine derivatives such as proflavine, eosin, etc. Also included are metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviation: SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)), etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0344] [ka]

[0345] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxy) 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9, 9-Dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Heteroaromatic compounds having a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound, such as 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), may also be used.

[0346] In addition, a substance in which a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound are directly bonded is particularly preferable because the donor property of the π-electron rich heteroaromatic compound and the acceptor property of the π-electron deficient heteroaromatic compound are both strong, and the energy difference between the singlet excited state and the triplet excited state is small. In addition, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used as the TADF material. Such a TADF material has a short emission lifetime (excitation lifetime), so that the efficiency decrease in the high brightness region of the light-emitting device can be suppressed.

[0347] [ka]

[0348] In addition to the above, examples of materials capable of converting triplet excitation energy into luminescence include nanostructures of transition metal compounds having a perovskite structure. In particular, nanostructures of metal halide perovskites are preferred. As the nanostructures, nanoparticles and nanorods are preferred.

[0349] In the light-emitting layers (113, 113a, 113b, 113c), one or more substances having an energy gap larger than the energy gap of the light-emitting substance (guest material) may be selected and used as the organic compound (host material, etc.) used in combination with the above-mentioned light-emitting substance (guest material).

[0350] <Fluorescent host material> When the light-emitting substance used in the light-emitting layers (113, 113a, 113b, 113c) is a fluorescent light-emitting substance, it is preferable to use, as the organic compound (host material) to be combined, an organic compound having a high energy level in a singlet excited state and a low energy level in a triplet excited state, or an organic compound having a high fluorescence quantum yield. Therefore, as long as the organic compound satisfies such conditions, the hole-transporting material (described above) and the electron-transporting material (described below) shown in this embodiment mode can be used. In addition, the organic compounds described in embodiment 1 can be used.

[0351] Although some of the examples overlap with those described above, examples of the organic compound (host material) from the viewpoint of a preferable combination with a light-emitting substance (fluorescent light-emitting substance) include condensed polycyclic aromatic compounds such as anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives.

[0352] Specific examples of organic compounds (host materials) that are preferably used in combination with fluorescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenylanthracene (abbreviation: N,N-diphenylanthracene), and N,N-diphenylanthracene (abbreviation: N,N-diphenylanthracene). N-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA) , 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl] Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9 -(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl]a anthracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtB ImPBPhA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl-2-yl)tetracene, etc.

[0353] <Phosphorescent host material> Furthermore, when the light-emitting substance used in the light-emitting layers (113, 113a, 113b, 113c) is a phosphorescent light-emitting substance, an organic compound having a higher triplet excitation energy (energy difference between the ground state and the triplet excited state) than the triplet excitation energy of the light-emitting substance may be selected as the organic compound (host material) to be combined. Note that when multiple organic compounds (for example, a first host material and a second host material (or assist material)) are used in combination with the light-emitting substance to form an exciplex, it is preferable to mix these multiple organic compounds with the phosphorescent light-emitting substance. The organic compounds described in embodiment 1 can be used.

[0354] With this structure, it is possible to efficiently obtain light emission using ExTET (Exciplex-Triplet Energy Transfer), which is an energy transfer from an exciplex to a light-emitting substance. As a combination of multiple organic compounds, it is preferable to use one that easily forms an exciplex, and it is particularly preferable to combine a compound that easily receives holes (hole transport material) with a compound that easily receives electrons (electron transport material).

[0355] Although some of the organic compounds (host materials, assist materials) may be used in combination with the light-emitting substance (phosphorescent light-emitting substance), examples of the organic compounds include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (benzoin), and the like. midazole ring), quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), phlodiazine derivatives (organic compounds having a phlodiazine ring), zinc- and aluminum-based metal complexes, and the like.

[0356] Among the organic compounds, specific examples of the aromatic amine and carbazole derivative, which are organic compounds having a high hole-transporting property, are the same as the specific examples of the hole-transporting material described above, and any of these are preferable as the host material.

[0357] Among the above organic compounds, specific examples of the dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds with high hole transport properties, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, 2,8-dipheny Examples of the dibenzothiophene include 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and 4-[3-(triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), all of which are preferable as the host material.

[0358] Other examples of preferred host materials include metal complexes having oxazole- or thiazole-based ligands, such as bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviation: ZnBTZ).

[0359] Specific examples of the organic compounds having high electron transport properties among the above organic compounds include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, and phenanthroline derivatives. Examples of the organic compounds having high electron transport properties include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4- (5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5 organic compounds containing heteroaromatic rings with polyazole rings, such as 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2,2'-biphenyl-4,4'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), Organic compounds containing heteroaromatic rings with pyridine rings such as 2-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDB q-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), etc., all of which are preferred as host materials.

[0360] Among the above organic compounds, specific examples of organic compounds having high electron transport properties, such as pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furodiazine derivatives, include 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), and 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II). 4,6mCzP2Pm), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (mPCCzPTzn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (35DCzPPy), 1,3 ,5-Tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d ]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 12PCCzPnfpr), 9-[(3'-9- phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho[ 1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9- [3-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9, 9'-Spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-furan Examples of suitable organic compounds include organic compounds containing heteroaromatic rings having a diazine ring, such as phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), all of which are suitable as host materials.

[0361] Among the above organic compounds, specific examples of metal complexes, which are organic compounds with high electron transport properties, include zinc- or aluminum-based metal complexes such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq), as well as metal complexes having a quinoline ring or a benzoquinoline ring, all of which are preferable as the host material.

[0362] Other preferred host materials include polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy).

[0363] Furthermore, bipolar organic compounds having high hole transport properties and high electron transport properties, such as 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[ Organic compounds having a diazine ring, such as 2,1-b]carbazole (abbreviation: mINc(II)PTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as the host material.

[0364] <Electron transport layer> The electron transport layers (114, 114a, 114b) are layers that transport electrons injected from the second electrode 102 and the charge generation layers (106, 106a, 106b) by the electron injection layers (115, 115a, 115b) described later to the light-emitting layers (113, 113a, 113b). Note that in the light-emitting device according to one embodiment of the present invention, the electron transport layer has a stacked structure, which can improve heat resistance. In addition, the electron transport material used in the electron transport layers (114, 114a, 114b) has an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. -6 cm 2A substance having an electron mobility of 100 / Vs or more is preferable. Note that other substances can be used as long as they have a higher electron transporting property than holes. The electron transporting layer (114, 114a, 114b) can function as a single layer, but may have a stacked structure of two or more layers. Note that the above mixed materials have heat resistance, so that the effect of a thermal process on device characteristics can be suppressed by performing a photolithography process on an electron transporting layer using the mixed materials.

[0365] ≪Electron transport material≫ As the electron transporting material that can be used for the electron transport layer (114, 114a, 114b), an organic compound with high electron transporting properties can be used, for example, a heteroaromatic compound can be used. The heteroaromatic compound is a cyclic compound containing at least two different elements in a ring. The ring structure includes a three-membered ring, a four-membered ring, a five-membered ring, a six-membered ring, etc., and a five-membered ring or a six-membered ring is particularly preferred, and the element contained is preferably a heteroaromatic compound containing one or more of nitrogen, oxygen, or sulfur in addition to carbon. In particular, a heteroaromatic compound containing nitrogen (nitrogen-containing heteroaromatic compound) is preferred, and it is preferable to use a material with high electron transporting properties (electron transporting material) such as a nitrogen-containing heteroaromatic compound or a π-electron-deficient heteroaromatic compound containing the same. The compound of the first embodiment has electron transporting properties, and can be used as an electron transporting material.

[0366] The electron transport material may be a material different from the material used in the light-emitting layer. Not all of the excitons generated by the recombination of carriers in the light-emitting layer can contribute to light emission, and they may diffuse to layers adjacent to or in the vicinity of the light-emitting layer. In order to avoid this phenomenon, it is preferable that the energy level (lowest singlet excitation level or lowest triplet excitation level) of the material used in the layer adjacent to or in the vicinity of the light-emitting layer is higher than that of the material used in the light-emitting layer. Therefore, by using a material different from the material used in the light-emitting layer as the electron transport material, a highly efficient device can be obtained.

[0367] A heteroaromatic compound is an organic compound that contains at least one heteroaromatic ring.

[0368] The heteroaromatic ring has any one of a pyridine ring, a diazine ring, a triazine ring, a polyazole ring, an oxazole ring, a thiazole ring, etc. The heteroaromatic ring having a diazine ring includes a heteroaromatic ring having a pyrimidine ring, a pyrazine ring, a pyridazine ring, etc. The heteroaromatic ring having a polyazole ring includes a heteroaromatic ring having an imidazole ring, a triazole ring, or an oxadiazole ring.

[0369] The heteroaromatic ring also includes a condensed heteroaromatic ring having a condensed ring structure, such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a phlodiazine ring, or a benzimidazole ring.

[0370] Incidentally, among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a five-membered ring structure include heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, and heteroaromatic compounds having a benzimidazole ring.

[0371] Furthermore, for example, among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a 6-membered ring structure include heteroaromatic compounds having a heteroaromatic ring such as a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, and a pyridazine ring), a triazine ring, and a polyazole ring. Included in the heteroaromatic compounds having a structure in which pyridine rings are linked are heteroaromatic compounds having a bipyridine structure and heteroaromatic compounds having a terpyridine structure.

[0372] Further, examples of heteroaromatic compounds having a fused ring structure partially including the above-mentioned 6-membered ring structure include heteroaromatic compounds having a fused heteroaromatic ring such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a phlodiazine ring (including a structure in which an aromatic ring is fused to the furan ring of a phlodiazine ring), and a benzimidazole ring.

[0373] Specific examples of the heteroaromatic compound having a five-membered ring structure (polyazole ring (including imidazole ring, triazole ring, and oxadiazole ring), oxazole ring, thiazole ring, benzimidazole ring, etc.) include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-furan (abbreviation: FUJI ...1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4 phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), and the like.

[0374] Specific examples of the heteroaromatic compound having a 6-membered ring structure (including a heteroaromatic ring having a pyridine ring, a diazine ring, a triazine ring, etc.) include heteroaromatic compounds having a pyridine ring such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB); ,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (PCDBfTzn), 2-(biphenyl-3 heteroaromatic compounds containing heteroaromatic rings having a triazine ring, such as 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), mFBPTzn, 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2P Pm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP-4mDBtPBfpm, 9mDBtBPN fpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl and heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm). The aromatic compounds containing a heteroaromatic ring include heteroaromatic compounds having a condensed heteroaromatic ring.

[0375] Other examples include 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), and 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), and the like.

[0376] Specific examples of the heteroaromatic compound having a fused ring structure partially including a 6-membered ring structure (heteroaromatic compound having a fused ring structure) include bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline), 2,2'-biphenyl-4,4'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviation: PPhen2BP), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBT) PDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h] quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2mpPCBPDBq, and other heteroaromatic compounds having a quinoxaline ring are included.

[0377] In addition to the heteroaromatic compounds described above, the electron transport layer (114, 114a, 114b) may include the following metal complexes: metal complexes having a quinoline ring or a benzoquinoline ring, such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3), Almq3, 8-quinolinolato-lithium (abbreviation: Liq), BeBq2, bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq), and metal complexes having an oxazole ring or a thiazole ring, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0378] In addition, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used as electron transport materials.

[0379] In addition, the electron transport layer (114, 114a, 114b) may be not only a single layer, but also a laminate structure of two or more layers made of the above-mentioned substances.

[0380] <Electron injection layer> The electron injection layers (115, 115a, 115b) are layers containing a substance with high electron injection properties. The electron injection layers (115, 115a, 115b) are layers for increasing the efficiency of electron injection from the second electrode 102, and it is preferable to use a material having a small difference (0.5 eV or less) between the work function value of the material used for the second electrode 102 and the LUMO level value of the material used for the electron injection layers (115, 115a, 115b). Therefore, the electron injection layer 115 may contain any of the following: lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-quinolinolato-lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x ), alkaline metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Rare earth metals or rare earth metal compounds such as erbium fluoride (ErF3) and ytterbium (Yb) can be used. The electron injection layer (115, 115a, 115b) may be formed by mixing a plurality of the above materials, or may be formed by stacking a plurality of the above materials. The electron injection layer (115, 115a, 115b) may be formed by using an electride. Examples of the electride include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. The substances constituting the above-mentioned electron transport layer (114, 114a, 114b) can also be used.

[0381] In addition, a mixed material obtained by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer (115, 115a, 115b). Such a mixed material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that is excellent in transporting the generated electrons, and specifically, for example, the above-mentioned electron transport material (metal complex, heteroaromatic compound, etc.) used for the electron transport layer (114, 114a, 114b) can be used. The electron donor may be any substance that exhibits electron donating properties to the organic compound. Specifically, alkali metals, alkaline earth metals, and rare earth metals are preferred, and examples of the electron donor include lithium, cesium, magnesium, calcium, erbium, and ytterbium. In addition, alkali metal oxides and alkaline earth metal oxides are preferred, and examples of the oxide include lithium oxide, calcium oxide, and barium oxide. In addition, a Lewis base such as magnesium oxide can also be used. In addition, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used. Moreover, a plurality of these materials may be laminated.

[0382] Alternatively, the electron injection layer (115, 115a, 115b) may be made of a mixed material made of an organic compound and a metal. The organic compound used here preferably has a LUMO (Lowest Unoccupied Molecular Orbital) level of -3.6 eV or more and -2.3 eV or less. In addition, a material having an unshared electron pair is preferable.

[0383] Therefore, as the organic compound used in the above mixed material, a mixed material obtained by mixing a heteroaromatic compound with a metal, which is described above as being usable in the electron transport layer, may be used. As the heteroaromatic compound, a material having an unshared electron pair, such as a heteroaromatic compound having a 5-membered ring structure (imidazole ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, benzimidazole ring, etc.), a heteroaromatic compound having a 6-membered ring structure (pyridine ring, diazine ring (including pyrimidine ring, pyrazine ring, pyridazine ring, etc.), triazine ring, bipyridine ring, terpyridine ring, etc.), or a heteroaromatic compound having a condensed ring structure (quinoline ring, benzoquinoline ring, quinoxaline ring, dibenzoquinoxaline ring, phenanthroline ring, etc.) that partially includes a 6-membered ring structure, is preferable. Specific materials have been described above, so a description thereof will be omitted here.

[0384] As the metal used in the above mixed material, it is preferable to use a transition metal belonging to Group 5, Group 7, Group 9 or Group 11 in the periodic table and a material belonging to Group 13, such as Ag, Cu, Al or In. In this case, the organic compound forms a half occupied molecular orbital (SOMO) with the transition metal.

[0385] For example, when the light obtained from the light-emitting layer 113b is amplified, the optical distance between the second electrode 102 and the light-emitting layer 113b is preferably less than ¼ of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, the thickness can be adjusted by changing the thickness of the electron-transporting layer 114b or the electron-injecting layer 115b.

[0386] In addition, as in the light-emitting device shown in Figure 1 (D), by providing a charge generation layer 106 between two organic compound layers (103a and 103b) that are EL layers, a structure (also called a tandem structure) in which multiple EL layers are stacked between a pair of electrodes can be formed.

[0387] <Charge generation layer> The charge generation layer 106 has a function of injecting electrons into the organic compound layer 103a and injecting holes into the organic compound layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be a structure in which an electron acceptor is added to a hole transporting material (also called a P-type layer), or a structure in which an electron donor is added to an electron transporting material (also called an electron injection buffer layer). In addition, both of these structures may be stacked. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 using the above-mentioned material, it is possible to suppress an increase in driving voltage when an EL layer is stacked.

[0388] In the case where the charge generation layer 106 has a structure (P-type layer) in which an electron acceptor is added to a hole transporting material that is an organic compound, the material shown in this embodiment mode can be used as the hole transporting material. Examples of the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ) and chloranil. Examples of the oxide of a metal that belongs to Groups 4 to 8 of the periodic table can also be used. Specific examples of the oxide include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Note that the above-mentioned acceptor material may also be used. In addition, a mixed film obtained by mixing materials constituting the P-type layer may be used, or single films containing each material may be stacked.

[0389] In the charge generation layer 106, when an electron donor is added to an electron transporting material (electron injection buffer layer), the material shown in this embodiment can be used as the electron transporting material. In addition, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table, and an oxide or carbonate thereof can be used as the electron donor. Specifically, it is preferable to use lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, or the like. In addition, an organic compound such as tetrathianaphthacene may be used as the electron donor.

[0390] In the case where an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transport properties, and has a function of preventing interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer and the LUMO level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer is -5.0 eV or more, preferably -5.0 eV or more and -3.0 eV or less. Note that, as the substance having electron transport properties used in the electron relay layer, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0391] Although FIG. 1D shows a structure in which the organic compound layer 103 has two stacked layers, a stacked structure of three or more EL layers may be used by providing a charge generating layer between different EL layers.

[0392] <Cap layer> Although not shown in FIGS. 1A to 1E, a capping layer may be provided on the second electrode 102 of the light-emitting device. For example, a material with a high refractive index can be used for the capping layer. By providing the capping layer on the second electrode 102, the extraction efficiency of light emitted from the second electrode 102 can be improved.

[0393] Specific examples of materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), and the like. In addition, the organic compounds described in the first embodiment can be used.

[0394] <Substrate> The light-emitting device shown in this embodiment mode can be formed on various substrates. The type of substrate is not limited to a specific one. Examples of the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, a paper containing a fibrous material, or a base film.

[0395] Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, soda lime glass, etc. Examples of flexible substrates, laminated films, base films, etc. include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic resins, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, epoxy resins, inorganic deposition films, and papers.

[0396] In addition, a gas phase method such as a vapor deposition method, a spin coating method, and a liquid phase method such as an inkjet method can be used to manufacture the light-emitting device shown in this embodiment. When a vapor deposition method is used, a physical vapor deposition method (PVD method) such as a sputtering method, an ion plating method, an ion beam deposition method, a molecular beam deposition method, and a vacuum deposition method, a chemical vapor deposition method (CVD: Chemical Vapor Deposition method), and the like can be used. In particular, layers having various functions included in the EL layer of the light-emitting device (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115) can be formed by a vapor deposition method (vacuum deposition method, etc.), a coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, and the like), a printing method (inkjet method, screen (screen printing) method, offset (lithographic printing) method, flexo (relief printing) method, gravure method, microcontact method, and the like), and the like.

[0397] In addition, when applying a film formation method such as the coating method or printing method, it is possible to use a high molecular compound (oligomer, dendrimer, polymer, etc.), a medium molecular compound (a compound in the intermediate range between a low molecular weight and a high molecular weight: a molecular weight of 400 to 4000), an inorganic compound (quantum dot material, etc.), etc. In addition, as the quantum dot material, it is possible to use a colloidal quantum dot material, an alloy type quantum dot material, a core-shell type quantum dot material, a core type quantum dot material, etc.

[0398] The layers constituting the organic compound layer 103 of the light-emitting device shown in this embodiment (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115) are not limited to the materials shown in this embodiment, and other materials can be used in combination as long as they fulfill the functions of each layer.

[0399] In this specification and the like, the terms "layer" and "film" can be used interchangeably as appropriate.

[0400] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0401] (Embodiment 3) 2A and 2B, a light-emitting device is formed by forming a plurality of the light-emitting devices described in the above embodiment 2 over an insulating layer 175. In this embodiment, a light-emitting device according to one embodiment of the present invention will be described in detail.

[0402] The light emitting device 1000 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0403] In this specification and the like, for example, matters common to the subpixels 110R, 110G, and 110B may be described as subpixel 110. Furthermore, for components distinguished by alphabets, matters common to the corresponding structures may be described using symbols without the alphabets.

[0404] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel section 177. In the present embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but the present invention is not limited to this configuration. That is, combinations of sub-pixels of other colors may be used. For example, the number of sub-pixels is not limited to three, and may be four or more. Examples of the four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), sub-pixels of four colors, R, G, B, and yellow (Y), and sub-pixels of R, G, B, and infrared light (IR).

[0405] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0406] 2A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may be arranged side by side in the Y direction, and subpixels of the same color may be arranged side by side in the X direction.

[0407] A connection portion 140 and a region 141 may be provided outside the pixel portion 177. For example, the region 141 may be provided between the pixel portion 177 and the connection portion 140. The region 141 is provided with an organic compound layer 103. In addition, the connection portion 140 is provided with a conductive layer 151C.

[0408] 2A shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0409] Fig. 2(B) is an example of a cross-sectional view between dashed dotted lines A1-A2 in Fig. 2(A). As shown in Fig. 2(B), the light-emitting device 1000 has an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 may be provided on a substrate (not shown). An opening reaching the conductive layer 172 is provided in the insulating layer 175, the insulating layer 174, and the insulating layer 173, and a plug 176 is provided to fill the opening.

[0410] In the pixel section 177, a light emitting device 130 (one of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B) is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided so as to cover the light emitting device 130. The substrate 120 is bonded onto the protective layer 131 by a resin layer 122. An inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 may be provided between adjacent light emitting devices 130.

[0411] 2B shows multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected to one another when the light-emitting device 1000 is viewed from above. In other words, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are insulating layers having openings over the first electrodes.

[0412] In FIG. 2B, the light emitting device 130 includes a light emitting device 130R, a light emitting device 130G, and a light emitting device 130B. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B emit light of different colors. For example, the light emitting device 130R can emit red light, the light emitting device 130G can emit green light, and the light emitting device 130B can emit blue light. The light emitting device 130R, the light emitting device 130G, or the light emitting device 130B may emit other visible light or infrared light.

[0413] The organic compound layer 103 has at least a light-emitting layer, and may have other functional layers (such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer). The organic compound layer 103 and the common layer 104 may be combined to form a functional layer (such as a hole injection layer, a hole transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, an electron transport layer, and an electron injection layer) that is included in an EL layer that emits light.

[0414] The light-emitting device of one embodiment of the present invention can be, for example, a top-emission type that emits light in a direction opposite to a substrate on which the light-emitting device is formed. Note that the light-emitting device of one embodiment of the present invention may be a bottom-emission type.

[0415] The light-emitting device 130R has the configuration as shown in the embodiment 2. It has a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer 104.

[0416] The common layer 104 is not necessarily required. By providing the common layer 104, damage to the organic compound layer 103R in a later process can be reduced. When the common layer 104 is provided, the common layer 104 may function as an electron injection layer. When the common layer 104 functions as an electron injection layer, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in the first embodiment.

[0417] Here, the light-emitting device 130 has the structure shown in embodiment 2. It has a first electrode (pixel electrode) composed of a conductive layer 151 and a conductive layer 152, an organic compound layer 103 on the first electrode, a common layer 104 on the organic compound layer 103, and a second electrode (common electrode) 102 on the common layer 104.

[0418] One of the pixel electrode and the common electrode of the light-emitting device functions as an anode and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0419] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent in an island shape, either for each light-emitting color or for each color of light emitted. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, it is possible to suppress leakage current between adjacent light-emitting devices 130 even in a high-definition light-emitting device. This makes it possible to prevent crosstalk and realize a light-emitting device with extremely high contrast. In particular, it is possible to realize a light-emitting device with high current efficiency at low luminance.

[0420] The organic compound layer 103 may be provided so as to cover the upper surface and side surface of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the light-emitting device 1000 compared to a configuration in which the end of the organic compound layer 103 is located inside the end of the pixel electrode. In addition, by covering the side surface of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, the pixel electrode and the second electrode 102 can be prevented from coming into contact with each other, so that a short circuit of the light-emitting device 130 can be prevented. In addition, the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the end of the organic compound layer 103 can be increased. Furthermore, since the end of the organic compound layer 103 may be damaged by processing, the reliability of the light-emitting device 130 can be improved by using an area away from the end of the organic compound layer 103 as the light-emitting region.

[0421] In the light-emitting device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device may have a stacked structure. For example, in the example shown in FIG. 2B, the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152.

[0422] For example, when the light-emitting device 1000 is a top-emission type, it is preferable that the pixel electrode of the light-emitting device 130 has a conductive layer 151 having a high reflectance to visible light and a conductive layer 152 having a visible light transmittance and a large work function. The higher the reflectance of the pixel electrode to visible light, the higher the extraction efficiency of the light emitted by the organic compound layer 103 can be. In addition, when the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Therefore, by forming the pixel electrode of the light-emitting device 130 into a laminated structure of the conductive layer 151 having a high reflectance to visible light and the conductive layer 152 having a high work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0423] Specifically, the reflectance of the conductive layer 151 to visible light is preferably, for example, 40% to 100%, and more preferably, 70% to 100%. When the conductive layer 152 is an electrode having transparency to visible light, it is preferable that the transmittance of the conductive layer 152 to visible light is, for example, 40% or more.

[0424] In addition, when a film formed after forming a pixel electrode having a laminated structure is removed by a wet etching method or the like, the chemical solution used for etching may permeate the structure. If the impregnated chemical solution comes into contact with the pixel electrode, galvanic corrosion or the like may occur between the multiple layers that make up the pixel electrode, and the pixel electrode may be altered.

[0425] Therefore, it is preferable to form the conductive layer 152 so as to cover the upper surface and side surfaces of the conductive layer 151. By covering the conductive layer 151 with the conductive layer 152, the impregnated chemical solution does not come into contact with the conductive layer 151, and the occurrence of galvanic corrosion in the pixel electrode can be suppressed. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield rate, and therefore the light-emitting device can be made low-cost. Furthermore, the occurrence of defects in the light-emitting device 1000 can be suppressed, and therefore the light-emitting device 1000 can be made highly reliable.

[0426] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing appropriate combinations of these metals can also be used.

[0427] The conductive layer 152 can be made of an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0428] The conductive layer 151 and the conductive layer 152 may have a stacked structure of a plurality of layers having different materials. In this case, the conductive layer 151 may have a layer using a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may have a layer using a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing the same material as the material used for the layer of the conductive layer 152 in contact with the conductive layer 151.

[0429] Note that the conductive layer 151 preferably has a tapered end. Specifically, the conductive layer 151 preferably has a tapered end with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered end. By making the end of the conductive layer 152 tapered, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0430] In the case where the conductive layer 151 or the conductive layer 152 has a layered structure, at least one side surface of the conductive layer 151 or the conductive layer 152 preferably has a tapered shape. In the layered structure constituting each conductive layer, each layer may have a different tapered shape.

[0431] FIG. 3A shows a case where the conductive layer 151 has a stacked structure of multiple layers containing different materials. As shown in FIG. 3A, the conductive layer 151 has a structure including a conductive layer 151_1, a conductive layer 151_2 on the conductive layer 151_1, and a conductive layer 151_3 on the conductive layer 151_2. That is, the conductive layer 151 shown in FIG. 3A has a three-layer stacked structure. In this way, when the conductive layer 151 has a stacked structure of multiple layers, the reflectance of at least one of the layers constituting the conductive layer 151 to visible light may be made higher than the reflectance of the conductive layer 152 to visible light.

[0432] 3A, the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3. The conductive layer 151_1 and the conductive layer 151_3 are preferably made of a material that is less likely to change in quality than the conductive layer 151_2. For example, the conductive layer 151_1 can be made of a material that is less likely to cause migration due to contact with the insulating layer 175 than the conductive layer 151_2. The conductive layer 151_3 can be made of a material that is less likely to oxidize than the conductive layer 151_2 and has an oxide with a lower electrical resistivity than the oxide of the material used for the conductive layer 151_2.

[0433] As described above, by sandwiching the conductive layer 151_2 between the conductive layer 151_1 and the conductive layer 151_3, the range of material selection for the conductive layer 151_2 can be expanded. As a result, for example, the conductive layer 151_2 can be a layer having a higher reflectance to visible light than at least one of the conductive layer 151_1 and the conductive layer 151_3. For example, aluminum can be used for the conductive layer 151_2. Note that an alloy containing aluminum may be used for the conductive layer 151_2. Furthermore, titanium, which is a material that has a lower reflectance to visible light than aluminum but is less likely to cause migration than aluminum even when in contact with the insulating layer 175, can be used for the conductive layer 151_1. Furthermore, titanium, which is a material that has a lower reflectance to visible light than aluminum but is less likely to oxidize than aluminum and has an oxide electrical resistivity lower than that of aluminum oxide, can be used for the conductive layer 151_3.

[0434] Alternatively, silver or an alloy containing silver may be used as the conductive layer 151_3. Silver has a characteristic that the reflectance of silver to visible light is higher than that of titanium. Furthermore, silver is less likely to oxidize than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide. As described above, when silver or an alloy containing silver is used as the conductive layer 151_3, the reflectance of the conductive layer 151 to visible light can be suitably increased, while the increase in the electrical resistance of the pixel electrode due to the oxidation of the conductive layer 151_2 can be suppressed. Here, as the alloy containing silver, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC) can be applied. Note that when silver or an alloy containing silver is used as the conductive layer 151_3 and aluminum is used as the conductive layer 151_2, the reflectance of the conductive layer 151_3 to visible light can be made higher than the reflectance of the conductive layer 151_2 to visible light. Here, silver or an alloy containing silver may be used as the conductive layer 151_2. Alternatively, the conductive layer 151_1 may be made of silver or an alloy containing silver.

[0435] On the other hand, a film using titanium has better processability by etching than a film using silver. Therefore, by using titanium for the conductive layer 151_3, the conductive layer 151_3 can be easily formed. Note that a film using aluminum also has better processability by etching than a film using silver.

[0436] As described above, the characteristics of the light-emitting device can be improved by forming the conductive layer 151 with a stacked structure of a plurality of layers. For example, the light-emitting device 1000 can have high light extraction efficiency and high reliability.

[0437] Here, when a microcavity structure is applied to the light-emitting device 130, the light extraction efficiency of the light-emitting device 1000 can be suitably improved by using silver or an alloy containing silver, which is a material with high reflectivity for visible light, as the conductive layer 151_3.

[0438] 3A, depending on the material selection or processing method of the conductive layer 151, the side surface of the conductive layer 151_2 may be located inside the side surfaces of the conductive layer 151_1 and the conductive layer 151_3 to form a protruding portion, which may reduce the coverage of the conductive layer 152 with respect to the conductive layer 151, and may cause a step discontinuity in the conductive layer 152.

[0439] Therefore, it is preferable to provide an insulating layer 156 as shown in Fig. 3A. Fig. 3A shows an example in which the insulating layer 156 is provided over the conductive layer 151_1 so as to have a region overlapping with a side surface of the conductive layer 151_2. This can prevent the conductive layer 152 from being broken or thinned due to the protrusion, thereby suppressing poor connection or an increase in driving voltage.

[0440] 3A illustrates a structure in which the side surface of the conductive layer 151_2 is entirely covered with the insulating layer 156, but the side surface of the conductive layer 151_2 may not be partially covered with the insulating layer 156. Similarly, in pixel electrodes having structures to be described later, the side surface of the conductive layer 151_2 may not be partially covered with the insulating layer 156.

[0441] 3A, the insulating layer 156 preferably has a curved surface. This can suppress the occurrence of step discontinuities in the conductive layer 152 covering the insulating layer 156, compared to when the side surface of the insulating layer 156 is vertical (parallel to the Z direction). Even when the insulating layer 156 has a tapered shape on the side surface, specifically a tapered shape with a taper angle of less than 90°, it can suppress the occurrence of step discontinuities in the conductive layer 152 covering the insulating layer 156, compared to when the side surface of the insulating layer 156 is vertical. As described above, the light emitting device 1000 can be manufactured by a method with a high yield rate. Furthermore, the occurrence of defects can be suppressed, and the light emitting device 1000 can be a highly reliable light emitting device.

[0442] Note that one embodiment of the present invention is not limited to this. For example, other structures of the first electrode 101 are shown in FIG.

[0443] FIG. 3B shows a configuration in which the insulating layer 156 covers not only the side surface of the conductive layer 151_2 but also the side surfaces of the conductive layers 151_1, 151_2, and 151_3 in the first electrode 101 of FIG. 3A.

[0444] FIG. 3C shows a structure in which the insulating layer 156 is not provided in the first electrode 101 of FIG.

[0445] FIG. 3D shows a structure in which the conductive layer 151 does not have a layered structure and the conductive layer 152 has a layered structure in the first electrode 101 in FIG. 3A.

[0446] The conductive layer 152_1 has higher adhesion to the conductive layer 152_2 than the insulating layer 175, for example. For the conductive layer 152_1, an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon can be preferably used. As described above, peeling of the conductive layer 152_2 can be suppressed. In addition, the conductive layer 152_2 can be configured not to be in contact with the insulating layer 175.

[0447] The conductive layer 152_2 has a higher reflectance to visible light (for example, reflectance to light having a predetermined wavelength in the range of 400 nm to less than 750 nm) than the conductive layer 151, the conductive layer 152_1, and the conductive layer 152_3. The reflectance of the conductive layer 152_2 to visible light can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. For example, silver or an alloy containing silver can be used as the conductive layer 152_2. For example, an alloy containing silver can be an alloy of silver, palladium, and copper (APC). As described above, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency. Note that a metal other than silver may be used as the conductive layer 152_2.

[0448] When the conductive layer 151 and the conductive layer 152 function as an anode, the conductive layer 152_3 is preferably a layer having a high work function. The conductive layer 152_3 is, for example, a layer having a higher work function than the conductive layer 152_2. The conductive layer 152_3 can be formed using, for example, a material similar to that which can be used for the conductive layer 152_1. For example, the conductive layer 152_1 and the conductive layer 152_3 can be formed using the same material.

[0449] Note that in the case where the conductive layer 151 and the conductive layer 152 function as cathodes, the conductive layer 152_3 preferably has a low work function, for example, a layer having a work function smaller than that of the conductive layer 152_2.

[0450] In addition, the conductive layer 152_3 is preferably a layer having a high transmittance for visible light (for example, transmittance for light having a predetermined wavelength in the range of 400 nm or more and less than 750 nm). For example, the transmittance for visible light of the conductive layer 152_3 is preferably higher than the transmittance for visible light of the conductive layer 151 and the conductive layer 152_2. For example, the transmittance for visible light of the conductive layer 152_3 can be 60% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less. As a result, the amount of light absorbed by the conductive layer 152_3 out of the light emitted by the organic compound layer 103 can be reduced. In addition, as described above, the conductive layer 152_2 under the conductive layer 152_3 can be a layer having a high reflectance for visible light. Therefore, the light-emitting device 1000 can be a light-emitting device having high light extraction efficiency.

[0451] Next, an example of a method for manufacturing the light emitting device 1000 having the structure shown in FIG. 2 will be described with reference to FIGS.

[0452] [Production method example 1] The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the light-emitting device can be formed by using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, a pulsed laser deposition (PLD) method, an ALD method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. Another thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0453] Furthermore, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the light-emitting device can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, the doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0454] In particular, for the production of light-emitting devices, vacuum processes such as deposition methods and solution processes such as spin coating and inkjet methods can be used. Examples of deposition methods include physical deposition methods (PVD methods) such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical deposition methods (CVD methods). In particular, functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) included in the organic compound layer can be formed by deposition methods (vacuum deposition methods, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet methods, screen (screen printing) methods, offset (lithographic printing) methods, flexo (letterpress printing) methods, gravure methods, microcontact methods, etc.), etc.

[0455] Furthermore, when processing the thin film constituting the light emitting device, it can be processed using, for example, a photolithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0456] There are two typical photolithography methods. One is a method in which a resist mask is formed on the thin film to be processed, the thin film is processed by, for example, etching, and the resist mask is then removed. The other is a method in which a photosensitive thin film is formed, and then exposed and developed to process the thin film into the desired shape.

[0457] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0458] 4(A), an insulating layer 171 is formed on a substrate (not shown). Then, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Then, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0459] The substrate may be a substrate having at least a heat resistance sufficient to withstand a subsequent heat treatment. When an insulating substrate is used, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate, made of silicon or silicon carbide, or the like may be used.

[0460] 4A, an opening reaching the conductive layer 172 is formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Then, a plug 176 is formed to fill the opening.

[0461] 4A, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, a sputtering method or a vacuum deposition method. The conductive film 151f can be made of, for example, a metal material.

[0462] 4A, for example, a resist mask 191 is formed over the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0463] 4B, the conductive film 151f in a region that does not overlap with the resist mask 191 is removed by, for example, an etching method, specifically, a dry etching method. When the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by a wet etching method. As a result, the conductive layer 151 is formed. When part of the conductive film 151f is removed by a dry etching method, for example, a recess (also referred to as a countersink) may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0464] 4(C), the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0465] 4(D), an insulating film 156f, which will later become the insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layers 151R, 151G, 151B, and 151C, and on the insulating layer 175. The insulating film 156f can be formed by, for example, a CVD method, an ALD method, a sputtering method, or a vacuum deposition method.

[0466] The insulating film 156f can be made of an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating film 156f. For example, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film containing silicon can be used for the insulating film 156f. For example, silicon oxynitride can be used for the insulating film 156f.

[0467] 4(E), the insulating film 156f is processed to form the insulating layers 156R, 156G, 156B, and 156C. For example, the insulating layer 156 can be formed by uniformly etching the upper surface of the insulating film 156f. Such uniform etching and planarization is also called an etch-back process. The insulating layer 156 may be formed by photolithography.

[0468] 5(A), a conductive film 152f which will later become the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175. Specifically, the conductive film 152f is formed so as to cover, for example, the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C.

[0469] The conductive film 152f can be formed by, for example, a sputtering method or a vacuum evaporation method. The conductive film 152f can be formed by, for example, an ALD method. The conductive film 152f can be formed using, for example, a conductive oxide. Alternatively, the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide on the film. For example, the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the film.

[0470] 5B, the conductive film 152f is processed by, for example, photolithography to form the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. Note that the conductive film 152f may also be removed by dry etching. In this manner, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0471] Subsequently, it is preferable to perform hydrophobization treatment on the conductive layer 152. The hydrophobization treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be increased, and film peeling can be suppressed. Note that the hydrophobization treatment is not necessarily performed.

[0472] 5C, an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the insulating layer 175. Then, as shown in FIG.

[0473] In the present invention, the organic compound film 103Bf has a plurality of organic compound layers each having at least one light-emitting layer. Specifically, the structure of the light-emitting device 130 described in the second embodiment can be referred to. Alternatively, the organic compound film 103Bf may have a structure in which a plurality of organic compound layers each having at least one light-emitting layer are laminated with an intermediate layer interposed therebetween.

[0474] As shown in Fig. 5(C), the organic compound film 103Bf is not formed on the conductive layer 152C. For example, by using a mask for defining a deposition area (also called an area mask or a rough metal mask, to distinguish it from a fine metal mask), the organic compound film 103Bf can be deposited only in a desired area. By employing a deposition process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured by a relatively simple process.

[0475] The organic compound film 103Bf can be formed by, for example, a deposition method, specifically, a vacuum deposition method. Alternatively, the organic compound film 103Bf may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0476] Subsequently, as shown in FIG. 5(D), a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are formed in this order on the organic compound film 103Bf.

[0477] The sacrificial film 158Bf and the mask film 159Bf may be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, the sacrificial film 158Bf and the mask film 159Bf may be formed by the above-mentioned wet film formation method.

[0478] The sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Bf. The substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200° C. or less, preferably 150° C. or less, more preferably 120° C. or less, more preferably 100° C. or less, and further preferably 80° C. or less.

[0479] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of the sacrificial film 158Bf and the mask film 159Bf, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0480] By providing a sacrificial film on the organic compound film 103Bf, damage to the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, and the reliability of the light-emitting device can be improved.

[0481] The sacrificial film 158Bf is made of a film having high resistance to the processing conditions of the organic compound film 103Bf, specifically, a film having a high etching selectivity with respect to the organic compound film 103Bf. The mask film 159Bf is made of a film having a high etching selectivity with respect to the sacrificial film 158Bf.

[0482] The sacrificial film 158Bf and the mask film 159Bf are preferably made of a film that can be removed by a wet etching method. By using the wet etching method, damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to the case of using the dry etching method.

[0483] When using the wet etching method, it is particularly preferable to use an acidic chemical solution, such as a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more kinds of acids (also called mixed acid).

[0484] The sacrificial film 158Bf and the mask film 159Bf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0485] In addition, by using a film containing a material having a light-shielding property against ultraviolet rays for the sacrificial film 158Bf and the mask film 159Bf, it is possible to prevent the organic compound layer from being irradiated with ultraviolet rays in, for example, an exposure process. By preventing the organic compound layer from being damaged by ultraviolet rays, it is possible to improve the reliability of the light-emitting device.

[0486] The same effect can be obtained when a film containing a material having a light blocking property against ultraviolet rays is used as the material of the inorganic insulating film 125f described later.

[0487] The sacrificial film 158Bf and the mask film 159Bf may be made of, for example, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing the metal material. In particular, it is preferable to use a low melting point material such as aluminum or silver.

[0488] In addition, for the sacrificial film 158Bf and the mask film 159Bf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used.

[0489] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0490] In addition, it is preferable to use a semiconductor material such as silicon or germanium as the sacrificial film 158Bf and the mask film 159Bf because it has a high affinity with the semiconductor manufacturing process. An oxide or nitride of the above semiconductor material can be used. Alternatively, a nonmetallic material such as carbon or a compound thereof can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, aluminum, or alloys containing one or more of these can be used. Alternatively, an oxide containing the above metals such as titanium oxide or chromium oxide, or a nitride such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0491] Moreover, various inorganic insulating films can be used for the sacrificial film 158Bf and the mask film 159Bf. In particular, an oxide insulating film is preferable because it has a higher adhesion to the organic compound film 103Bf than a nitride insulating film. For example, an inorganic insulating material such as aluminum oxide, hafnium oxide, silicon oxide, etc. can be used for the sacrificial film 158Bf and the mask film 159Bf. For example, an aluminum oxide film can be formed as the sacrificial film 158Bf and the mask film 159Bf by using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlayer (particularly the organic compound layer).

[0492] In addition, an organic material may be used for one or both of the sacrificial film 158Bf and the mask film 159Bf. For example, a material that can be dissolved in a chemically stable solvent may be used as the organic material for at least the film located at the top of the organic compound film 103Bf. In particular, a material that can be dissolved in water or alcohol can be preferably used. When forming a film of such a material, it is preferable to apply the material by a wet film forming method in a state where the material is dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, by performing the heat treatment under a reduced pressure atmosphere, the solvent can be removed at a low temperature in a short time, which is preferable because it reduces thermal damage to the organic compound film 103Bf.

[0493] The sacrificial film 158Bf and the mask film 159Bf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0494] For example, the sacrificial film 158Bf may be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 159Bf may be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0495] 5(D), a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0496] The resist mask 190B may be made of either a positive resist material or a negative resist material.

[0497] The resist mask 190B is provided at a position overlapping with the conductive layer 152B. The resist mask 190B is preferably provided also at a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the light-emitting device. Note that the resist mask 190B does not necessarily have to be provided on the conductive layer 152C. Furthermore, the resist mask 190B is preferably provided so as to cover from an end of the organic compound film 103Bf to an end of the conductive layer 152C (the end on the organic compound film 103Bf side) as shown in the cross-sectional view between B1 and B2 in FIG. 5(C).

[0498] 5(E), a part of the mask film 159Bf is removed using the resist mask 190B to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B and the conductive layer 152C. Then, the resist mask 190B is removed. Then, a part of the sacrificial film 158Bf is removed using the mask layer 159B as a mask (also referred to as a hard mask) to form a sacrificial layer 158B.

[0499] The sacrificial film 158Bf and the mask film 159Bf can be processed by wet etching or dry etching, respectively. The sacrificial film 158Bf and the mask film 159Bf are preferably processed by wet etching.

[0500] By using the wet etching method, damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to the case of using the dry etching method. When using the wet etching method, it is preferable to use an acidic chemical solution. When using the wet etching method, it is preferable to use a chemical solution using, for example, a developer, a tetramethylammonium hydroxide solution (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, hydrofluoric acid, sulfuric acid, or a mixture of two or more of these acids (also called mixed acid).

[0501] In processing the mask film 159Bf, the organic compound film 103Bf is not exposed, so the range of processing methods to be selected is wider than in processing the sacrificial film 158Bf. Specifically, even if a gas containing oxygen is used as an etching gas in processing the mask film 159Bf, deterioration of the organic compound film 103Bf can be further suppressed.

[0502] In addition, when a dry etching method is used in processing the sacrificial film 158Bf, deterioration of the organic compound film 103Bf can be suppressed by not using a gas containing oxygen as an etching gas. When a dry etching method is used, it is preferable to use a gas containing a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as an etching gas.

[0503] The resist mask 190B can be removed in the same manner as the resist mask 191. At this time, since the sacrificial film 158Bf is located on the outermost surface and the organic compound film 103Bf is not exposed, damage to the organic compound film 103Bf can be suppressed in the process of removing the resist mask 190B. In addition, the range of options for removing the resist mask 190B can be expanded.

[0504] 5(E), the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a part of the organic compound film 103Bf to form the organic compound layer 103B.

[0505] 5E, a laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. Also, the conductive layer 152G and the conductive layer 152R are exposed.

[0506] The organic compound film 103Bf can be processed by dry etching or wet etching. For example, when processing by dry etching, an etching gas containing oxygen can be used. When the etching gas contains oxygen, the etching speed can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching speed. Therefore, damage to the organic compound film 103Bf can be suppressed. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0507] Alternatively, an etching gas that does not contain oxygen may be used, for example, by using an etching gas that does not contain oxygen, deterioration of the organic compound film 103Bf can be suppressed.

[0508] As described above, in one embodiment of the present invention, the resist mask 190B is formed over the mask film 159Bf, and part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. Then, part of the organic compound film 103Bf is removed using the mask layer 159B as a hard mask to form the organic compound layer 103B. Thus, it can be said that the organic compound layer 103B is formed by processing the organic compound film 103Bf by a photolithography method. Note that part of the organic compound film 103Bf may be removed using the resist mask 190B. Then, the resist mask 190B may be removed.

[0509] Here, the conductive layer 152G may be subjected to hydrophobic treatment as necessary. During processing of the organic compound film 103Bf, for example, the surface state of the conductive layer 152G may change to hydrophilic. For example, by subjecting the conductive layer 152G to hydrophobic treatment, for example, the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later process can be improved, and film peeling can be suppressed.

[0510] 6A, an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175. As shown in FIG.

[0511] The organic compound film 103Gf can be formed by the same method as that used for forming the organic compound film 103Bf, and can have the same structure as the organic compound film 103Bf.

[0512] 6B, a sacrificial film 158Gf that will later become the sacrificial layer 158G and a mask film 159Gf that will later become the mask layer 159G are sequentially formed on the organic compound film 103Gf and the mask layer 159B. Then, a resist mask 190G is formed. The material and the forming method of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Bf and the mask film 159Bf. The material and the forming method of the resist mask 190G are the same as those applicable to the resist mask 190B.

[0513] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0514] 6(C), a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The organic compound film 103Gf is then processed to form an organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as a hard mask to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0515] 6C, a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. Also, the mask layer 159B and the conductive layer 152R are exposed.

[0516] In addition, for example, a hydrophobic treatment may be performed on the conductive layer 152R.

[0517] 7A, an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175. Then, as shown in FIG.

[0518] The organic compound film 103Rf can be formed by the same method as that used for forming the organic compound film 103Gf, and can have the same configuration as the organic compound film 103Gf.

[0519] 7(B) and 7(C), a sacrificial layer 158R is formed from the sacrificial film 158Rf, a mask layer 159R is formed from the mask film 159Rf, or an organic compound layer 103R is formed from the organic compound film 103Rf using a resist mask 190R. The description of the organic compound layer 103G can be referred to for the methods of forming the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R.

[0520] It is preferable that the side surfaces of the organic compound layers 103B, 103G, and 103R are perpendicular or substantially perpendicular to the surface on which they are formed. For example, it is preferable that the angle between the surface on which they are formed and these side surfaces is 60 degrees or more and 90 degrees or less.

[0521] As described above, the distance between two adjacent ones of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R formed by photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between two adjacent opposing ends of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In this way, by narrowing the distance between the island-shaped organic compound layers, a light-emitting device having high definition and a large aperture ratio can be provided. In addition, the distance between the first electrodes between adjacent light-emitting devices can also be narrowed, and can be, for example, 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Note that the distance between the first electrodes between adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0522] Next, as shown in FIG. 8(A), the mask layers 159B, 159G, and 159R are removed.

[0523] In the present embodiment, the case where the mask layers 159B, 159G, and 159R are removed will be described as an example, but the mask layers 159B, 159G, and 159R do not have to be removed. For example, when the mask layers 159B, 159G, and 159R contain a material having a light blocking property against ultraviolet light as described above, the organic compound layer can be protected from light irradiation (including illumination light) by proceeding to the next step without removing the mask layers.

[0524] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R during the mask layer removal can be reduced compared to the case of using a dry etching method.

[0525] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0526] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, and water adsorbed on the surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. For example, a heat treatment can be performed in an inert atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0527] Next, as shown in FIG. 8(B), an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.

[0528] As described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has high affinity with the material (e.g., a photosensitive resin composition containing an acrylic resin) used for the insulating film that will become the insulating layer 127. In order to improve the affinity, a surface treatment may be performed on the upper surface of the inorganic insulating film 125f. Specifically, it is preferable to hydrophobize (or increase the hydrophobicity of) the surface of the inorganic insulating film 125f. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this manner, the insulating film 127f can be formed with good adhesion.

[0529] Subsequently, as shown in FIG. 8(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0530] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is preferably formed by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than the insulating film 127f.

[0531] The inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat-resistant temperature limits of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, respectively. By increasing the substrate temperature during film formation, the inorganic insulating film 125f can be a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even if it is thin.

[0532] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or more, 80°C or more, 100°C or more, or 120°C or more, and 200°C or less, 180°C or less, 160°C or less, 150°C or less, or 140°C or less.

[0533] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0534] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. By using the ALD method, damage during film formation can be reduced, and a film with high coverage can be formed, which is preferable. As the inorganic insulating film 125f, for example, an aluminum oxide film is preferably formed by the ALD method.

[0535] Alternatively, the inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling a highly reliable light emitting device to be manufactured with high productivity.

[0536] The insulating film 127f is preferably formed by using the above-mentioned wet film formation method. The insulating film 127f is preferably formed by using a photosensitive material, for example, by spin coating, and more specifically, is preferably formed by using a photosensitive resin composition containing an acrylic resin.

[0537] The insulating film 127f is preferably formed using a resin composition containing, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also called constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates an acid when irradiated with light and a compound that generates an acid when heated can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0538] Moreover, it is preferable to perform heat treatment (also referred to as pre-baking) after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. The substrate temperature during the heat treatment is preferably from 50° C. to 200° C., more preferably from 60° C. to 150° C., and further preferably from 70° C. to 120° C. This can remove the solvent contained in the insulating film 127f.

[0539] Next, exposure is performed to expose a part of the insulating film 127f to visible light or ultraviolet light. When a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is applied to a region where the insulating layer 127 is not to be formed in a later step. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is applied to the conductive layers 152B, 152G, 152R, and 152C. When a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is applied to a region where the insulating layer 127 is to be formed.

[0540] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment, the insulating layer 127 is processed so as to have a portion overlapping with the upper surface of the conductive layer 151.

[0541] Here, by providing a barrier insulating layer against oxygen (for example, an aluminum oxide film, etc.) as one or both of the sacrificial layer 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, it is possible to reduce the diffusion of oxygen into the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer becomes excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, when light (visible light or ultraviolet light) is irradiated to the organic compound layer in an atmosphere containing oxygen, oxygen may be bonded to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0542] 9(A), development is performed to remove the exposed region of the insulating film 127f, forming an insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and in a region surrounding the conductive layer 152C. When an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as the developer.

[0543] 9(B), an etching process is performed using the insulating layer 127a as a mask to remove a part of the inorganic insulating film 125f, and to reduce the thickness of the sacrificial layers 158B, 158G, and 158R. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. In the following, the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask may be referred to as a first etching process.

[0544] That is, in the first etching process, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R are not completely removed, and the etching process is stopped when the film thickness becomes thin. In this way, by leaving the corresponding sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R on the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is possible to prevent the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R from being damaged in the processing of the subsequent process.

[0545] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158B, 158G, and 158R, the inorganic insulating film 125f can be processed and the exposed sacrificial layer 158 can be thinned in one go by the first etching process, which is preferable.

[0546] By performing etching using insulating layer 127a with tapered side surfaces as a mask, the side surfaces of inorganic insulating layer 125 and the upper end portions of the side surfaces of sacrificial layers 158B, 158G, and 158R can be tapered relatively easily.

[0547] For example, when the first etching process is performed by dry etching, a chlorine-based gas can be used. As the chlorine-based gas, Cl2, BCl3, SiCl4, CCl4, etc. can be used alone or in a mixture of two or more gases. In addition, oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be appropriately added alone or in a mixture of two or more gases to the chlorine-based gas. By using dry etching, the thin film regions of the sacrificial layers 158B, 158G, and 158R can be formed with good in-plane uniformity.

[0548] Furthermore, for example, the first etching process can be performed by wet etching, which can reduce damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R compared to the case of using dry etching.

[0549] For wet etching, it is preferable to use an acidic chemical solution, such as a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more kinds of acids (also called mixed acid).

[0550] Alternatively, an alkaline solution may be used. For example, an alkaline solution, TMAH, may be used for wet etching of an aluminum oxide film. In this case, the wet etching may be performed by a paddle method.

[0551] Next, heat treatment (also referred to as post-bake) is performed. By performing heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered sides (see FIG. 9C). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. The substrate temperature of the heat treatment in this step is preferably higher than that of the heat treatment (pre-bake) after the formation of the insulating film 127f.

[0552] The heat treatment can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125, and can also improve the corrosion resistance of the insulating layer 127. In addition, the insulating layer 127a can be deformed so that the end portion of the inorganic insulating layer 125 is covered by the insulating layer 127.

[0553] In the first etching process, the sacrificial layers 158B, 158G, and 158R are not completely removed, and the sacrificial layers 158B, 158G, and 158R are left in a state where their thicknesses are reduced, thereby preventing the organic compound layers 103B, 103G, and 103R from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0554] 10(A), an etching process is performed using the insulating layer 127 as a mask to remove parts of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R. At this time, a part of the inorganic insulating layer 125 may also be removed. The etching process forms openings in the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, and the upper surfaces of the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, and the conductive layer 152C are exposed from the openings. In the following, the etching process using the insulating layer 127 as a mask to expose the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R may be referred to as a second etching process.

[0555] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to the case of using the dry etching method. The wet etching can be performed using an acidic chemical solution or an alkaline solution, as in the first etching process.

[0556] In addition, after exposing a part of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, a heat treatment may be further performed. The heat treatment can remove water contained in the organic compound layer and water adsorbed on the surface of the organic compound layer. The heat treatment may change the shape of the insulating layer 127. Specifically, the insulating layer 127 may extend to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, and the upper surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0557] Note that FIG. 10(A) shows an example in which a portion of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127, and the tapered portion formed by the second etching process is exposed (see FIG. 3(A)).

[0558] The insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may contact the upper surface of at least one of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0559] 10B, a common electrode 155 is formed over the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a sputtering method, a vacuum deposition method, or the like. Alternatively, the common electrode 155 may be formed by stacking a film formed by a deposition method and a film formed by a sputtering method.

[0560] 10C, the protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0561] Then, the substrate 120 is attached over the protective layer 131 by using the resin layer 122, so that a light-emitting device can be manufactured. As described above, in the method for manufacturing a light-emitting device according to one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of light-emitting devices and suppress the occurrence of defects.

[0562] As described above, in the method for manufacturing a light-emitting device according to one embodiment of the present invention, the island-shaped organic compound layer 103B, the island-shaped organic compound layer 103G, and the organic compound layer 103R are formed by forming a film on one surface and then processing it, instead of using a fine metal mask, so that the island-shaped layers can be formed with a uniform thickness. As a result, a high-definition light-emitting device or a light-emitting device with a high aperture ratio can be realized. Even if the definition or aperture ratio is high and the distance between the subpixels is extremely short, the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current can be prevented from occurring between the subpixels. As a result, crosstalk can be prevented, and a light-emitting device with extremely high contrast can be realized. Even if a light-emitting device has a tandem light-emitting device manufactured by a photolithography method, a light-emitting device with good characteristics can be provided.

[0563] (Embodiment 4) In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS. 11A to 11G and FIGS. 12A to 12I.

[0564] [Pixel layout] In this embodiment, a pixel layout different from that in Fig. 2 will be mainly described. There is no particular limitation on the arrangement of the sub-pixels, and various methods can be applied. Examples of the arrangement of the sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0565] The top shape of the sub-pixels shown in the drawings in this embodiment mode corresponds to the top shape of the light-emitting region.

[0566] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0567] Furthermore, the layout of the circuits constituting the subpixels is not limited to the range of the subpixels shown in the figures, and may be arranged outside of the subpixels.

[0568] An S-stripe arrangement is applied to the pixel 178 shown in Fig. 11(A) The pixel 178 shown in Fig. 11(A) is composed of three subpixels: a subpixel 110R, a subpixel 110G, and a subpixel 110B.

[0569] The pixel 178 shown in FIG. 11B has a sub-pixel 110R having a substantially trapezoidal or triangular top surface shape with rounded corners, a sub-pixel 110G having a substantially trapezoidal or triangular top surface shape with rounded corners, and a sub-pixel 110B having a substantially rectangular or hexagonal top surface shape with rounded corners. The sub-pixel 110R has a larger light-emitting area than the sub-pixel 110G. In this manner, the shape and size of each sub-pixel can be determined independently. For example, the more reliable the light-emitting device is, the smaller the size of the sub-pixel can be.

[0570] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 11(C). Fig. 11(C) shows an example in which the pixel 124a having the sub-pixel 110R and the sub-pixel 110G and the pixel 124b having the sub-pixel 110G and the sub-pixel 110B are arranged alternately.

[0571] The pixels 124a and 124b shown in Fig. 11(D) to Fig. 11(F) are arranged in a delta arrangement. The pixel 124a has two subpixels (subpixel 110R and subpixel 110G) in the upper row (first row) and one subpixel (subpixel 110B) in the lower row (second row). The pixel 124b has one subpixel (subpixel 110B) in the upper row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the lower row (second row).

[0572] Figure 11(D) is an example in which each sub-pixel has an approximately rectangular top surface shape with rounded corners, Figure 11(E) is an example in which each sub-pixel has a circular top surface shape, and Figure 11(F) is an example in which each sub-pixel has an approximately hexagonal top surface shape with rounded corners.

[0573] In Fig. 11(F), each subpixel is arranged inside a hexagonal region in which the subpixels are arranged closely together. When focusing on one subpixel, each subpixel is arranged so that it is surrounded by six subpixels. In addition, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110R, three subpixels 110G and three subpixels 110B are arranged alternately to surround subpixel 110R.

[0574] 11G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels arranged in a row (for example, subpixels 110R and 110G, or subpixels 110G and 110B) are misaligned.

[0575] 11(A) to 11(G), it is preferable that the subpixel 110R is the subpixel R that emits red light, the subpixel 110G is the subpixel G that emits green light, and the subpixel 110B is the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, the subpixel 110G may be the subpixel R that emits red light, and the subpixel 110R may be the subpixel G that emits green light.

[0576] In photolithography, the finer the pattern to be processed, the more the effect of light diffraction cannot be ignored, and therefore the fidelity is lost when the photomask pattern is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed. Therefore, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0577] Furthermore, in the manufacturing method of the light-emitting device according to one embodiment of the present invention, the organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the material of the organic compound layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape different from a desired shape during processing. As a result, the top surface shape of the organic compound layer may be a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape is formed, and the top surface shape of the organic compound layer may become circular.

[0578] In order to make the top surface shape of the organic compound layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that a design pattern and a transfer pattern coincide with each other. Specifically, in the OPC technique, a correction pattern is added to, for example, a figure corner portion on the mask pattern.

[0579] As shown in FIGS. 12A to 12I, a pixel can have four types of subpixels.

[0580] The pixels 178 shown in FIGS. 12(A) to 12(C) are arranged in a stripe.

[0581] Figure 12(A) is an example in which each subpixel has a rectangular top surface shape, Figure 12(B) is an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and Figure 12(C) is an example in which each subpixel has an elliptical top surface shape.

[0582] A matrix arrangement is applied to the pixels 178 shown in FIG. 12(D) to FIG. 12(F).

[0583] Figure 12(D) is an example where each sub-pixel has a square top surface shape, Figure 12(E) is an example where each sub-pixel has an approximately square top surface shape with rounded corners, and Figure 12(F) is an example where each sub-pixel has a circular top surface shape.

[0584] 12(G) and 12(H) show an example in which one pixel 178 is configured in two rows and three columns.

[0585] 12G has three subpixels (subpixel 110R, subpixel 110G, and subpixel 110B) in the top row (first row) and one subpixel (subpixel 110W) in the bottom row (second row). In other words, pixel 178 has subpixel 110R in the left column (first column), subpixel 110G in the center column (second column), subpixel 110B in the right column (third column), and subpixel 110W across these three columns.

[0586] The pixel 178 shown in FIG. 12(H) has three subpixels (subpixel 110R, subpixel 110G, and subpixel 110B) in the upper row (first row) and three subpixels 110W in the lower row (second row). In other words, the pixel 178 has the subpixels 110R and 110W in the left column (first column), the subpixels 110G and 110W in the center column (second column), and the subpixels 110B and 110W in the right column (third column). As shown in FIG. 12(H), by aligning the arrangement of the subpixels in the upper row and the lower row, it is possible to efficiently remove dust that may occur in the manufacturing process, for example. Therefore, a light emitting device with high display quality can be provided.

[0587] In the pixel 178 shown in FIGS. 12G and 12H, the subpixels 110R, 110G, and 110B are arranged in a striped layout, thereby improving the display quality.

[0588] FIG. 12(I) shows an example in which one pixel 178 is arranged in three rows and two columns.

[0589] 12(I) has subpixel 110R in the top row (first row), subpixel 110G in the center row (second row), subpixel 110B from the first row to the second row, and one subpixel (subpixel 110W) in the bottom row (third row). In other words, pixel 178 has subpixel 110R and subpixel 110G in the left column (first column), subpixel 110B in the right column (second column), and subpixel 110W across these two columns.

[0590] In the pixel 178 shown in FIG. 12(I), the layout of the subpixels 110R, 110G, and 110B is a so-called S-stripe arrangement, which can improve the display quality.

[0591] 12A to 12I is composed of four subpixels, namely, subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W. For example, subpixel 110R may be a subpixel that emits red light, subpixel 110G may be a subpixel that emits green light, subpixel 110B may be a subpixel that emits blue light, and subpixel 110W may be a subpixel that emits white light. At least one of subpixels 110R, subpixel 110G, subpixel 110B, and subpixel 110W may be a subpixel that emits cyan light, a subpixel that emits magenta light, a subpixel that emits yellow light, or a subpixel that emits near-infrared light.

[0592] As described above, in the light-emitting device of one embodiment of the present invention, various layouts can be applied to a pixel having a subpixel including a light-emitting device.

[0593] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate.

[0594] (Embodiment 5) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described.

[0595] The light emitting device of the present embodiment can be a high-definition light emitting device. Therefore, the light emitting device of the present embodiment can be used for the display unit of a wristwatch type, a bracelet type, or other information terminal (wearable device), and for the display unit of a wearable device that can be worn on the head, such as a head mounted display (HMD) or other VR device, and a glasses type AR device.

[0596] The light-emitting device of this embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, the light-emitting device of this embodiment can be used for the display portion of, for example, a television device, a desktop or notebook personal computer, a monitor for a computer, digital signage, a large game machine such as a pachinko machine, and other electronic devices having a relatively large screen, as well as a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, and an audio reproducing device.

[0597] [Display module] 13A shows a perspective view of a display module 280. The display module 280 has a light emitting device 100A and an FPC 290. Note that the light emitting device included in the display module 280 is not limited to the light emitting device 100A, and may be any of a light emitting device 100B and a light emitting device 100C described below.

[0598] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 described later can be viewed.

[0599] 13(B) shows a perspective view that typically illustrates the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are laminated on the substrate 291. A terminal portion 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 that is composed of a plurality of wirings.

[0600] The pixel section 284 has a plurality of pixels 284a arranged periodically. An enlarged view of one pixel 284a is shown on the right side of Fig. 13(B). The various configurations described in the above embodiments can be applied to the pixel 284a.

[0601] The pixel circuit section 283 has a plurality of pixel circuits 283a that are periodically arranged.

[0602] One pixel circuit 283a is a circuit that controls the driving of multiple devices included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitance for each light-emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active matrix type light-emitting device.

[0603] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0604] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. In addition, an IC may be mounted on the FPC 290.

[0605] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are laminated under the pixel section 284, so that the aperture ratio (effective display area ratio) of the display section 281 can be extremely high. For example, the aperture ratio of the display section 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, so that the resolution of the display section 281 can be extremely high. For example, it is preferable that the pixels 284a are arranged in the display section 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0606] Such a display module 280 is extremely high-definition and can be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display unit 281, so that even if the display unit is enlarged with a lens, pixels are not visible, and a highly immersive display can be performed. In addition, the display module 280 is not limited to this, and can be suitably used in electronic devices having a relatively small display unit. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0607] [Light-emitting device 100A] The light emitting device 100A shown in FIG. 14A includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240, and a transistor 310. The light emitting device 100A shown in FIG.

[0608] The substrate 301 corresponds to the substrate 291 in FIGS. 13A and 13B. The transistor 310 is a transistor having a channel formation region in the substrate 301. For example, a semiconductor substrate such as a single crystal silicon substrate can be used as the substrate 301. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0609] In addition, a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0610] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0611] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0612] The conductive layer 241 is provided over the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0613] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between the adjacent light emitting devices. For example, in FIG. 14(A), an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in the region.

[0614] An insulating layer 156R is provided to have a region overlapping with a side surface of the conductive layer 151R of the light emitting device 130R, an insulating layer 156G is provided to have a region overlapping with a side surface of the conductive layer 151G of the light emitting device 130G, and an insulating layer 156B is provided to have a region overlapping with a side surface of the conductive layer 151B of the light emitting device 130B. Further, a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided to cover the conductive layer 151B and the insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0615] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source or drain of the transistor 310 via the insulating layer 243, the insulating layer 255, the insulating layer 174, a plug 256 embedded in the insulating layer 175, the conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0616] Further, a protective layer 131 is provided on the light emitting devices 130R, 130G, and 130B. The substrate 120 is bonded onto the protective layer 131 by a resin layer 122. For details of the components from the light emitting devices 130 to the substrate 120, refer to the second embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 13(A).

[0617] Fig. 14(B) is a modified example of the light emitting device 100A shown in Fig. 14(A). The light emitting device shown in Fig. 14(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light emitting device 130 has an area overlapping one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. In the light emitting device shown in Fig. 14(B), the light emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0618] [Light-emitting device 100B] FIG. 15 shows a perspective view of light emitting device 100B, and FIG. 16(A) shows a cross-sectional view of light emitting device 100B.

[0619] Light emitting device 100B has a configuration in which substrate 352 and substrate 351 are bonded together. In Fig. 15, substrate 352 is indicated by a dashed line.

[0620] The light emitting device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, etc. Fig. 15 shows an example in which an IC 354 and an FPC 353 are mounted on the light emitting device 100B. Therefore, the configuration shown in Fig. 15 can also be called a display module having the light emitting device 100B, an IC (integrated circuit), and an FPC. Here, a light emitting device having a connector such as an FPC attached to a substrate, or a light emitting device having an IC mounted on the substrate, is called a display module.

[0621] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be provided along one side or multiple sides of the pixel portion 177. The connection portion 140 may be single or multiple. FIG. 15 shows an example in which the connection portion 140 is provided so as to surround the four sides of the pixel portion 177. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0622] The circuit 356 can be, for example, a scanning line driver circuit.

[0623] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0624] 15 shows an example in which an IC 354 is provided on a substrate 351 by a chip on glass (COG) method or a chip on film (COF) method. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354. Note that the light emitting device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method.

[0625] FIG. 16(A) shows an example of a cross section of a portion of a region including an FPC 353, a portion of a circuit 356, a portion of a pixel portion 177, a portion of a connection portion 140, and a portion of a region including an end portion of the light-emitting device 100B.

[0626] The light-emitting device 100B shown in Figure 16 (A) has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0627] The light emitting devices 130R, 130G, and 130B each have the layered structure shown in Fig. 6A, except that the configurations of the pixel electrodes are different. For details of the light emitting devices, refer to the above embodiment.

[0628] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B. Here, conductive layer 224R, conductive layer 151R, and conductive layer 152R may be collectively referred to as a pixel electrode of light-emitting device 130R, and conductive layer 151R and conductive layer 152R excluding conductive layer 224R may be referred to as a pixel electrode of light-emitting device 130R. Similarly, conductive layer 224G, conductive layer 151G, and conductive layer 152G may be collectively referred to as a pixel electrode of light-emitting device 130G, and conductive layer 151G and conductive layer 152G excluding conductive layer 224G may be collectively referred to as a pixel electrode of light-emitting device 130G. Also, conductive layer 224B, conductive layer 151B, and conductive layer 152B may be collectively referred to as a pixel electrode of light-emitting device 130B, and conductive layer 151B and conductive layer 152B excluding conductive layer 224B may be collectively referred to as a pixel electrode of light-emitting device 130B.

[0629] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with a side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0630] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0631] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. The layer 128 is embedded in the recesses.

[0632] The layer 128 has a function of planarizing the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, which are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, are provided on the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as light-emitting regions, and the aperture ratio of the pixel can be increased.

[0633] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be appropriately used for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and more preferably formed using an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 127 described above can be used for the layer 128.

[0634] A protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. The substrate 352 is provided with a light shielding layer 157. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light emitting device 130. In FIG. 16(A), the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, or the like), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light emitting device. The space may also be filled with a resin different from the adhesive layer 142 provided in a frame shape.

[0635] 16A shows an example in which the connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. Also, FIG. 16A shows an example in which an insulating layer 156C is provided so as to have an area overlapping with a side surface of the conductive layer 151C.

[0636] The light emitting device 100B is a top emission type. Light emitted by the light emitting device is emitted to the substrate 352 side. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0637] Both the transistor 201 and the transistor 205 are formed over a substrate 351. These transistors can be manufactured using the same material and through the same process.

[0638] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over a substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and functions as a planarizing layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0639] At least one of the insulating layers covering the transistor is preferably made of a material that is difficult for impurities such as water and hydrogen to diffuse into. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the light-emitting device.

[0640] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. A hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may also be used. Two or more of the above insulating films may also be stacked.

[0641] An organic insulating layer is suitable for the insulating layer 214 that functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. The insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably has a function as an etching protection layer. This can prevent a recess from being formed in the insulating layer 214 when the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, or the like is processed. Alternatively, a recess may be provided in the insulating layer 214 when the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, or the like is processed.

[0642] The transistor 201 and the transistor 205 each have a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate. Here, the same hatched pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0643] The structure of the transistor included in the light-emitting device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. In addition, either a top-gate type or a bottom-gate type transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0644] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0645] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in a part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0646] A semiconductor layer of the transistor preferably contains a metal oxide, that is, the light-emitting device of this embodiment preferably uses a transistor in which a channel formation region is formed using a metal oxide (hereinafter, referred to as an OS transistor).

[0647] Examples of oxide semiconductors having crystallinity include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0648] Alternatively, a transistor using silicon in a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in a semiconductor layer (hereinafter, also referred to as an LTPS transistor) may be used. An LTPS transistor has high field effect mobility and good frequency characteristics.

[0649] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, simplifying the external circuits mounted on the light-emitting device and reducing component and mounting costs.

[0650] An OS transistor has a much higher field-effect mobility than a transistor using amorphous silicon. In addition, the OS transistor has a significantly smaller source-drain leakage current in an off state (hereinafter also referred to as off current) and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. In addition, the use of an OS transistor can reduce the power consumption of a light-emitting device.

[0651] Furthermore, in order to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a drive transistor included in the pixel circuit. Since an OS transistor has a higher withstand voltage between the source and drain compared to a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the drive transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0652] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current in response to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely determined by changing the gate-source voltage, and the amount of current flowing to the light-emitting device can be controlled. This allows the pixel circuit to have a larger gradation.

[0653] Furthermore, in terms of the saturation characteristics of the current that flows when the transistor operates in the saturation region, the OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. For this reason, by using an OS transistor as a drive transistor, for example, a stable current can be passed through a light-emitting device even when the current-voltage characteristics of the light-emitting device vary. In other words, when the OS transistor operates in the saturation region, the source-drain current hardly changes even when the source-drain voltage is increased, so the light emission luminance of the light-emitting device can be stabilized.

[0654] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," and "suppression of variation in light-emitting devices," etc.

[0655] The semiconductor layer preferably contains, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0656] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0657] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2:3 or a composition thereabout, In:M:Zn=4:2:4.1 or a composition thereabout, In:M:Zn=5:1:3 or a composition thereabout, In:M:Zn=5:1:6 or a composition thereabout, In:M:Zn=5:1:7 or a composition thereabout, In:M:Zn=5:1:8 or a composition thereabout, In:M:Zn=6:1:6 or a composition thereabout, and In:M:Zn=5:2:5 or a composition thereabout. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0658] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, it includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. When describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, it includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. When describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, it includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0659] The transistors included in the circuit 356 and the transistors included in the pixel portion 177 may have the same structure or different structures. The transistors included in the circuit 356 may all have the same structure or may have two or more types. Similarly, the transistors included in the pixel portion 177 may all have the same structure or may have two or more types.

[0660] All the transistors in the pixel portion 177 may be OS transistors, all the transistors in the pixel portion 177 may be Si transistors, or some of the transistors in the pixel portion 177 may be OS transistors and the rest may be Si transistors.

[0661] For example, by using both an LTPS transistor and an OS transistor in the pixel portion 177, a light-emitting device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. Note that, for example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling the conduction / non-conduction of wiring, and to use an LTPS transistor as a transistor for controlling current.

[0662] For example, one of the transistors in the pixel section 177 functions as a transistor for controlling a current flowing through a light-emitting device, and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0663] On the other hand, the other one of the transistors in the pixel portion 177 functions as a switch for controlling selection / non-selection of the pixel, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor for the selection transistor. This allows the gradation of the ...

Claims

1. An organic compound represented by general formula (G2): 【Chemistry 1】 (In the general formula (G2), X represents a sulfur atom or an oxygen atom, and R １ , R ２ , R ６ ~R ９ , R ２０ ~R ２６ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０３ ~R １０５ , R １３５ , and R １３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, a substituted or unsubstituted dibenzothiophenyl group, or a substituted or unsubstituted dibenzofuranyl group; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

2. An organic compound represented by general formula (G3): 【Chemistry 2】 (In the general formula (G3), X represents a sulfur atom or an oxygen atom, and R ６ ~R １７ , R ２０ ~R ２６ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０３ ~R １０５ , R １３５ , and R １３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

3. An organic compound represented by general formula (G4): 【Chemistry 3】 (In the general formula (G4), X represents a sulfur atom or an oxygen atom, and R １ , R ２ , R ６ ~R ９ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０３ ~R １０５ , R １３５ , and R １３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

4. An organic compound represented by general formula (G5): 【Chemistry 4】 (In the general formula (G5), X represents a sulfur atom or an oxygen atom, and R ６ ~R １７ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０３ ~R １０５ , R １３５ , and R １３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

5. An organic compound represented by general formula (G6): 【Chemistry 5】 (In the general formula (G6), X represents a sulfur atom or an oxygen atom, and R １ , R ２ , and R ４０ ~R ４３ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R ３４ , R １３５ , and R １３６ represents hydrogen (including deuterium), n represents an integer of 1 to 4, and when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

6. An organic compound represented by general formula (G7): 【Chemistry 6】 (In the general formula (G7), X represents a sulfur atom or an oxygen atom, and R ６ ~R １７ , R ４０ ~R ４３ , and R １０３ ~R １０５ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R ３４ , R １３５ , and R １３６ represents hydrogen (including deuterium), n represents an integer of 1 to 4, and when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

7. An organic compound represented by general formula (G8): 【Chemistry 7】 (In the general formula (G8), X represents a sulfur atom or an oxygen atom, and R １ , R ２ , R ６ ~R ９ , R ２０ ~R ２６ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０４ ~R １０６ , R ３５ , and R ３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

8. An organic compound represented by general formula (G9): 【Chemistry 8】 (In the general formula (G9), X represents a sulfur atom or an oxygen atom, and R ６ ~R １７ , R ２０ ~R ２６ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０４ ~R １０６ , R ３５ , and R ３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

9. An organic compound represented by general formula (G10): 【Chemistry 9】 (In the general formula (G10), X represents a sulfur atom or an oxygen atom, and R １ , R ２ , R ６ ~R ９ , R ３０ ~R ３４ , R ４０ ~R ４３ , R １０４ ~R １０６ , R ３５ , and R ３６ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

10. An organic compound represented by general formula (G11): 【Chemistry 10】 (In the general formula (G11), X represents a sulfur atom or an oxygen atom, and R １ , R ２ and R ４０ ~R ４３ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

11. A light emitting device comprising an organic compound according to any one of claims 1 to 10.

12. A first electrode and a second electrode; an organic compound layer sandwiched between the first electrode and the second electrode; The organic compound layer comprises an organic compound represented by general formula (G1). 【Chemistry 11】 (In the general formula (G1), X represents a sulfur atom or an oxygen atom, and R １ ~R ９ , R ２０ ~R ２６ , R ３０ ~R ３６ , and R ４０ ~R ４３ each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; n represents an integer of 1 to 4; when n is 2 or more, a plurality of R ４０ ~R ４３ may be the same or different.)

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