Apparatus for manufacturing semiconductor device

Abstract

To provide an apparatus for manufacturing a semiconductor device.SOLUTION: An apparatus for manufacturing a semiconductor device including a base material 101 and a film applied on the base material by a chemical vapour deposition (CVD) process includes: a process chamber 2 having the base material arranged along a first reference axis Z of the process chamber and an orientation where the base material exists in a plane parallel and orthogonal to the first reference axis; a heating system for heating the process chamber at a predetermined internal temperature; a delivery unit 4 for delivering process gas to the process chamber; and an exhaust gas extraction unit 6 for extracting process exhaust gas from the process chamber.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] TECHNICAL FIELD OF THEINVENTION The present invention relates to an apparatus for manufacturing semiconductor devices of the type that includes a substrate and a film applied onto the substrate by a chemical vapor deposition (CVD) process. [Background technology]

[0002] This type of apparatus includes a process chamber in which multiple substrates are disposed and in which process gases supplied to the process chamber undergo a CVD process to form films on the multiple substrates.

[0003] One aspect of the manufacturing process performed by such an apparatus may be that the CVD process leads to the formation of substantially identical films (e.g., having substantially the same thickness) on all substrates placed within the process chamber.

[0004] This can be accomplished if uniform conditions, such as temperature, gas flow rates, and pressure, can be established within a process chamber at all locations occupied by multiple substrates.

[0005] JP 2014123616, JP 5783859, and JP 2550024 disclose certain prior art devices. Summary of the Invention

[0006] Summary of the Invention The invention proposes an apparatus for manufacturing semiconductor devices

[0007] The present invention generally relates to an apparatus as set forth in claim 1.

[0008] The invention also relates to a method according to claim 20.

[0009] The claims form an integral part of the teachings provided herein.

[0010] BRIEF DESCRIPTION OF THE DRAWINGS AND A DETAILED DESCRIPTION OF ONE OR MORE EMBODIMENTS OF THE PRESENT DISCLOSURE Further characteristics and advantages of the present invention will become apparent from the following description, given by way of non-limiting example only, with reference to the accompanying drawings, in which: [Brief description of the drawings]

[0011] [Figure 1] 1 shows a preferred embodiment of the device described herein. [Diagram 2] 2 shows the inner housing of the device of FIG. 1; [Diagram 3] 2 shows the device of FIG. 1 cut in different parts to show its inner regions; [Figure 4] 2 shows a case for the device of FIG. 1; [Diagram 5] 5 shows the case of FIG. 4 partially disassembled. [Figure 6] 2 shows a substrate linear formation on which a film is deposited by a CVD process implemented in the apparatus of FIG. 1. [Figure 7] 2 shows a delivery unit of the device of FIG. 1 in an assembled state. [Figure 7A] 2 shows a delivery unit of the device of FIG. 1 in a disassembled state. [Figure 7B] FIG. 8 is a side view of the dispensing unit of FIG. [Figure 7C] 7C shows a cross section of the delivery unit in plane II shown in FIG. 7B. [Figure 8] 2 shows an exhaust gas extraction unit of the device of FIG. 1 in an assembled state. [Figure 8A] 2 shows an exhaust gas extraction unit of the device of FIG. 1 in an exploded state. [Figure 8B] FIG. 9 is a side view of the exhaust gas extraction unit of FIG. 8. [Figure 8C] 8C shows a cross section of the exhaust gas extraction unit in the plane II-II shown in FIG. 8B. [Figure 9] FIG. 2 is a schematic diagram of the apparatus of FIG. 1. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] In the following description, various specific details are illustrated for the purpose of providing a deeper understanding of the embodiments. The embodiments may be realized without one or more of the specific details, or with other methods, components, or materials, etc. In other instances, known structures, materials, or operations are not shown or described in detail to avoid obscuring various aspects of the embodiments.

[0013] References used herein are used merely for convenience and therefore do not define the scope of protection or the scope of the embodiments.

[0014] As mentioned above, the apparatus described herein is for manufacturing semiconductor devices of the type that include a substrate and a film applied (e.g., deposited) on the substrate by a chemical vapor deposition (CVD) process or a low pressure chemical vapor deposition (LPCVD) process. For example, the deposited film may include or consist of silicon carbide.

[0015] Referring to Figures 1 to 8, an apparatus, generally designated by reference numeral 10, comprises: a process chamber 2 in which a substrate 101 (e.g., a silicon or graphite wafer) undergoing a CVD process is placed; a delivery unit 4 for delivering process gas to the process chamber; and an exhaust gas extraction unit 6 for extracting process exhaust gases from the process chamber.

[0016] In one or more preferred embodiments, for example in the illustrated embodiment (see Figures 4-6), the apparatus 10 comprises a case 8 that surrounds the process chamber 2 and has an inlet 8A that receives process gas exhausted by the delivery unit 4, and an outlet 8B that directs process exhaust gas towards the exhaust gas extraction unit 6.

[0017] In one or more preferred embodiments, for example in the illustrated embodiment, the case 8 comprises an inlet section 8C, a central section 8D, and an outlet section 8E, arranged successively along the reference axis Y.

[0018] The central section 8D surrounds the process chamber 2. Meanwhile, the inlet section 8C includes an inlet 8A and the outlet section 8E includes an outlet 8B, both of which are in fluid communication with the process chamber 2 surrounded by the central section 8D.

[0019] The central section 8D is configured to receive a plurality of substrates 101 arranged in a linear configuration 101′ along a reference axis Z perpendicular to the reference axis Y and according to an orientation in which the substrates 101 lie in a parallel plane perpendicular to the reference axis Z.

[0020] In one or more preferred embodiments, for example in the illustrated embodiment, reference axis Z is vertical, while reference axis Y is horizontal.

[0021] In an alternative embodiment, reference axis Z is horizontal and reference axis Y is vertical. In a further alternative embodiment, both reference axes Z and Y are horizontal.

[0022] The substrates 101 are preferably loaded onto a rack 7 (or any other equivalent frame) that is configured to hold and support the substrates according to the linear configuration 101' described above.

[0023] In the illustrated example, the rack 7 has two opposing disk-shaped ends 7A connected to each other by three longitudinal posts 7B positioned on the peripheral edges of the two ends 7A at a constant round trip angular distance of 120°.

[0024] Posts 7B each have a longitudinal series of internally projecting pins (not shown) that are capable of supporting substrate 101 on parallel lying planes according to an arrangement of linear configuration 101'.

[0025] Preferably, rack 7 is fitted with a rotation mechanism (not shown) for preparing rack 7 and the substrates 101 carried by it during the CVD process, and rotates about an axis of rotation parallel to reference axis Z.

[0026] The case 8 is configured to establish a pressure differential between the inlet 8A and the outlet 8B, generating a gas flow across the case 8 from the inlet 8A to the outlet 8B. In particular, the generated gas flow travels serially along the reference axis Y through the inlet section 8C, the central section 8D, and the outlet section 8E, where in the central section 8D the gas flow passes across the substrate linear configuration 101′ and flows over all of the substrates 101.

[0027] In one or more preferred embodiments, for example in the illustrated embodiment, the case 8 has a cross-sectional flow area, dimension H along the reference axis Z, that is uniform and constant throughout the inlet section, central section, and outlet sections 8C, 8D, 8E.

[0028] On the other hand, in one or more preferred embodiments, for example in the illustrated embodiment, the cross-sectional flow area of ​​the case 8 has a dimension L that is enlarged in the central section 8D relative to the inlet and outlet sections 8C, 8E in a direction perpendicular to the reference axis Z, and as a result of this feature, the gas flow velocity in the central section 8D is lower than in the inlet and outlet sections 8C, 8E.

[0029] The case 8 is preferably made of a material that is thermally conductive and resistant to high temperatures, note that "high temperatures" means temperatures above 1000° C. and up to 1400° C., which represents the range of temperatures typically required in a process chamber during a CVD process. Preferably, the case 8 is made of graphite.

[0030] In view of the above, the case 8 is configured as a molded duct that surrounds the process chamber 2 and creates a fluid dynamic system that controls the supply of process gases to the process chamber 2 and the removal of process exhaust gases from the same.

[0031] In one or more preferred embodiments, for example in the illustrated embodiment, the inlet section 8C includes a series of fins 8F extending in a linear configuration parallel to a reference axis Z and facing the inlet 8A, with each fin 8F lying perpendicular to the reference axis Z, and all fins 8F evenly spaced and positioned along axis Z to uniformly distribute and guide the gas flow entering the case inlet 8A to a plurality of positions corresponding to the positions of the substrate 101 in the linear configuration 101'. Preferably, the fins 8F are made of graphite.

[0032] From a construction point of view, the case 8 can be realized in different ways according to the needs of a particular application.

[0033] In one or more preferred embodiments, for example, in the illustrated embodiment, the case 8 comprises a pair of opposing walls 81, both extending generally along a reference axis Y, and a pair of end closures 82 attached to edges 81' of the pair of walls 81 that face each other along a reference axis Z.

[0034] With reference to the reference axis Y, each of the pair of opposing walls 81 has a flat portion 81C at an upstream end, a flat portion 81E at a downstream end, and a central concave (e.g., cylindrical) portion 81D having a convex surface facing the outside of the case 8.

[0035] Similarly, with reference to reference axis Y, each of the pair of end closures 82 has an upstream end flat portion 82C, a downstream end flat portion 82E, and a central flat portion 82D.

[0036] The pair of walls 81 and the pair of end closures 82 are assembled together to form the case 8 in the following manner, among others: The flat portions 81C at the upstream ends of the pair of opposing walls 81 and the flat portions 82C at the upstream ends of the pair of end closures 82 together form an inlet section 8C of the case 8; - a central portion 81D of the pair of opposing walls 81 and a central portion 82D of the pair of end closures 82 together form a central section 8D of the case 8; the flat portions 81E at the downstream ends of the pair of opposing walls 81 and the flat portions 82E at the downstream ends of the pair of end closures 82 together form the outlet section 8E of the case 8;

[0037] Furthermore, the apparatus 10 includes a heating system for heating the process chamber 2 to a predetermined internal temperature, which is typically within the above-mentioned range of 1000° C. to 1400° C.

[0038] In one or more preferred embodiments, for example in the illustrated embodiment (see FIG. 3), the heating system comprises a plurality of heaters 3 positioned outside the case 8 and generating thermal radiation for heating the case 8.

[0039] The radiantly heated case 8 constitutes a "hot wall" that, as it rotates, heats the process chamber 2 and the substrate contained therein to a predetermined internal temperature.

[0040] In one or more preferred embodiments, for example in the illustrated embodiment, the heater 3 extends longitudinally parallel to and along a reference axis Z for a length substantially equal to the dimension of the case 8 (i.e., its height in the illustrated example).

[0041] In one or more preferred embodiments, for example in the illustrated embodiment, the heating system comprises two series 3A, 3B of radiant heaters 3 arranged outside the case and facing and running along a pair of opposing walls 81, and in particular in one or more preferred embodiments, for example in the illustrated embodiment, each series of heaters 3 follows a line M that coincides with the contour of the respective facing wall 81 along a reference axis Y. Preferably, the heaters 3 of each series are evenly spaced from each other.

[0042] In one or more embodiments, for example in the illustrated embodiment, each series 3A or 3B extends from the beginning of the upstream end portion 81C of the respective wall 81 to approximately the end of its central portion 81D.

[0043] The heater 3 is therefore arranged to mainly and predominantly heat the inlet and central sections 8C, 8D of the case 8.

[0044] Preferably, the heating system is configured to heat the inlet section 8C to a higher temperature than the central section 8D.

[0045] For this purpose, in one or more preferred embodiments, for example in the illustrated embodiment, each series of heaters 3 has an additional heater 3' in the region of the inlet section 8D, which is located behind the line M (i.e. further away from the case 8 than the line M), preferably in an intermediate position between one heater 3 and the next heater in the series.

[0046] In this way, the heating system can determine a more rapid increase in the temperature of the process gas flowing through the inlet section 8C of the case 8.

[0047] Both the delivery unit 4 and the exhaust gas extraction unit 6 are disposed outside the case 8 and are fluidly connected to the case 8 (described in more detail below), such that the process gas discharged by the delivery unit 4 can reach the inlet 8A of the case 8, and the process exhaust gas flowing out of the case 8 via the outlet 8B can reach the extraction unit 6.

[0048] In one or more preferred embodiments, for example in the illustrated embodiment (see FIGS. 1-3), the device 10 comprises a fixed base 12 that supports the case 8, the delivery unit 4, and the exhaust gas extraction unit 6.

[0049] The base 12 comprises a plate 12A, for example made of steel, having a first seat 12B for receiving the delivery unit 4 and a second seat 12C for receiving the exhaust gas extraction unit 6.

[0050] Insulation block 12D is disposed on plate 12A between first sheet 12B and second sheet 12C and is configured to be separate from plate 12A and to receive case 8 thereon. Insulation block 12D is preferably made of foam, and even more preferably made of graphite foam.

[0051] In one or more preferred embodiments, for example in the illustrated embodiment (see Figures 7, 7A, 7B, and 7C), the delivery unit 4 is provided with an inner cooling pipe 44 (see Figure 7C) for cooling the process gas before it is discharged by the delivery unit. The cooling pipe 44 is connected to a system for thermal conditioning and circulating a cooling medium (e.g. water) through the cooling pipe 44.

[0052] The cooling action exerted by the cooling medium circulating through the cooling tubes 44 has the function of maintaining the temperature of the process gas below a certain threshold until it reaches the case 8, in order to avoid premature activation of the reaction of the process gas. This prevents the process gas from being consumed prematurely and therefore wasted, and also the risk of clogging of the delivery unit 4 by particles generated as a result of the reaction of the process gas.

[0053] In one or more preferred embodiments, for example in the illustrated embodiment (see Figures 7, 7A, 7B, and 7C), the delivery unit 4 comprises a delivery pylon 42 having a connection portion 41 provided at its lower end.

[0054] The connecting portion 41 is received in the seat 12B of the plate 12A and is provided with an outer flange 41A for fixing the delivery unit to the plate 12A, for example by means of screws.

[0055] Further, the delivery pylon 42 is fixed to the insulating block 12D of the base 12 and is received within the space between a pair of opposing posts 11 (see Figures 2 and 3) extending parallel to the reference axis Z, and the delivery pylon 42 is fixed to the two posts 11, for example by screws.

[0056] The connection part 41 has an inlet 41C through which the process gas enters the delivery unit 4, and an inlet 41D and an outlet 41E which form part of a cooling pipe 44 provided within the delivery unit 4.

[0057] Inlet 41C is fluidly connected to a supply of process gas, while inlet 41D and outlet 41E are connected to the system described above for thermal regulation and circulation of cooling medium.

[0058] Referring to Figures 3, 7, 7A, 7B and 7C, the delivery pylon 42 has a closed housing 42B that starts from the connection portion 41, extends parallel to the reference axis Z and is in internal fluid communication with the latter's inlet 41C.

[0059] The housing 42B is bounded by a baffle plate 42A and has one side oriented towards the inlet 8A of the case 8.

[0060] The baffle plate 42A has a number of orifices 42' through which the process gas supplied to the delivery unit 4 via the inlet duct 41C exits the delivery unit towards the inlet 8A of the case 8.

[0061] The above-mentioned plurality of orifices 42' are formed in the baffle plate 42A over substantially the entire extension area thereof.

[0062] Baffle plate 42A has dimensions along reference axis Z and directions perpendicular thereto that are approximately equal to the corresponding dimensions of inlet 8A.

[0063] In one or more preferred embodiments, for example, in the illustrated embodiment, delivery pylon 42 further comprises an inner baffle plate 42A' adjacent and parallel to baffle plate 42A.

[0064] Inner baffle plate 42A' preferably has a greater width (along a direction perpendicular to reference axis Z) than baffle plate 42A and has a plurality of orifices positioned according to an offset arrangement relative to the orifices of baffle plate 42A.

[0065] The side of the housing 42B facing the baffle plate 42A is closed by a cover 42C, and to prevent leakage of process gases, a first seal 42D is mounted between the cover 42C and the inner baffle plate 42A', a second seal 42E is mounted between the inner baffle plate 42A' and the baffle plate 42A, and a third seal 42F is mounted between the baffle plate 42A and a perimetral edge 42G of the housing 42B.

[0066] In one or more preferred embodiments, for example, in the illustrated embodiment (see Figures 7, 7A, 7B, and 7C), baffle plate 42A is positioned on the same side of housing 42B as baffle plate 42A and is offset inwardly relative to end portion 42H of housing 42B that surrounds baffle plate 42A.

[0067] End portion 42H projects beyond baffle plate 42A in a direction towards case 8 to form a central conduit section 42I which is traversed by process gas flowing out from the inside of housing 42B through baffle plate 42A.

[0068] In one or more preferred embodiments, for example in the illustrated embodiment (see Figures 7, 7A, 7B, and 7C), the cooling tubes 44 are realized as cavities made in the walls of the housing 42B and the walls of the connecting portion 41.

[0069] In one or more preferred embodiments, for example in the illustrated embodiment (see Figures 7, 7A, 7B, and 7C), the cooling tubes 44 are made in the end portion 42H of the housing 42B and are arranged to surround the conduit section 42I, running along a trajectory contained in a plane parallel to the baffle plate 42A, running along the contour of the latter, specifically its two vertical segments and its upper horizontal segment.

[0070] It can therefore be noted that such an arrangement of the cooling tubes 44 allows the cooling medium to exert its cooling effect even when the process gas flow is already in contact with the heated case 8 and also with the delivery unit 4. In this way, the cooling effect exerted by the cooling medium demonstrates maximum effectiveness in maintaining the temperature of the process gas below a given threshold value and also protects the delivery unit 4 from the high temperatures of the heated case 8.

[0071] Similar to the delivery unit 4, in one or more preferred embodiments, for example in the illustrated embodiment (see FIGS. 3, 8, 8A, 8B, and 8C), the exhaust gas extraction unit 6 is provided with a cooling pipe 64 for cooling the process exhaust gas received from the case 8. The cooling pipe 64 is connected to a system for thermal conditioning a cooling medium (e.g., water) and circulating it through the cooling pipe 44.

[0072] The cooling action provided by the cooling medium circulating through the cooling tubes 64 serves to reduce the temperature of the exhaust gas below a certain threshold in order to prevent process gas residues that may remain in the exhaust gas from initiating process reactions and generating particles that may lead to clogging of the extraction unit.

[0073] In one or more preferred embodiments, for example in the illustrated embodiments (see Figures 3, 8, 8A, 8B, and 8C), the exhaust gas extraction unit 6 comprises an extraction pylon 62 having a connecting portion 61 at its lower end.

[0074] The connecting part 61 is received in the seat 12C of the plate 12A and is provided with an outer flange 61A for fixing the brewing unit 6 to the plate 12A, for example by means of screws.

[0075] On the other hand, the extraction pylon 62 is fixed to the insulating block 12D of the base 12 and is received in the space between a pair of opposing posts 13 (see Figures 2 and 3) extending parallel to the reference axis Z, and the extraction pylon 62 is fixed to the two posts 13, for example by screws.

[0076] The connecting part 61 has an outlet pipe 61C, through which the exhaust gases sucked in by the extraction pylon 62 leave the extraction unit 6, and also has an inlet 61D and an outlet 61E forming part of a cooling pipe 64 provided in the extraction unit 6. The inlet 61D and the outlet 61E are connected to the above-mentioned system for thermal conditioning and circulation of the cooling medium.

[0077] In one or more preferred embodiments, for example in the illustrated embodiment, the extraction pylon 62 has a closed housing 62B extending parallel to the reference axis Z and in internal fluid communication with the outlet duct 62C of the connection portion 61.

[0078] In one or more preferred embodiments, for example in the illustrated embodiment, the housing 62B is bounded by a baffle plate 62A and has one side oriented toward the outlet 8B of the case 8.

[0079] The baffle plate 62A has a single row of orifices 62' extending parallel to the reference axis Z, through which the process exhaust gas coming from the outlet 8B is drawn into the extraction unit 6.

[0080] Preferably, the baffle plate 62A extends parallel to the reference axis Z for a length along the reference axis Z approximately equal to the dimension of the outlet 8B.

[0081] In one or more preferred embodiments, for example in the illustrated embodiment, both the extraction pylon 62 and the outlet tube 61C have an inner liner 63 (see FIG. 8A) made of a material resistant to high temperatures, with which the process exhaust gases come into contact, and which is intended to protect the other parts of the extraction pylon 62 and the other parts of the vessel body 61B from the high temperatures of the exhaust gases. Preferably, the inner liner is made of graphite. The liner 63, contained in the housing 62B, has a respective row of holes 63' that are aligned with the row of orifices 62' in the baffle plate 62A.

[0082] In one or more preferred embodiments, for example in the illustrated embodiment (see Figures 8A and 8C), the cooling tubes 64 are realized as cavities made in the wall of the housing 62B and are arranged to surround the baffle plate 62A, are contained in a plane parallel to the baffle plate 42A and run along a trajectory that follows the contour of the latter, in particular its two vertical segments and an upper horizontal segment.

[0083] In view of the above, it can be noted that such an arrangement of the cooling tubes 64 allows the cooling action of the cooling medium to be concentrated in the area of ​​the extraction unit 6 exposed to the heated case 8. In this way, the exhaust gases are cooled as soon as they enter the extraction unit 6, the latter being effectively protected from the high temperatures of the heated case 8.

[0084] In one or more preferred embodiments, for example in the illustrated embodiment (see FIG. 3 ), the apparatus 10 further comprises intermediate duct sections 15, 16 positioned between the inlet 8A of the case 8 and the delivery pylon 42, and between the outlet 8B of the case 8 and the extraction pylon 62, respectively, and fluidly connecting the delivery pylon 42 to the inlet 8A and the extraction pylon 62 to the outlet 8B, respectively.

[0085] In this way, the duct sections 15, 16 spatially separate the two pylons 42, 62 from the case 8 and therefore create a corresponding transition area, whereby a temperature gradient is established in the gas flow, and the two pylons 42, 62 are then exposed to a cooler gas flow. Both of the two sections 15, 16 are preferably made of a material resistant to high temperatures, for example graphite.

[0086] In one or more preferred embodiments, for example, in the illustrated embodiment (see FIGS. 1-3), device 10 includes a housing structure 14 that is movable along a reference axis Z relative to base 12 between a first position (shown in FIG. 1 ) in which housing structure 14 and base are coupled together and separate case 8 from the outside, and a second position (shown in FIG. 3 ) in which housing structure 14 is detached from base 12 and case 8 is accessible from the outside.

[0087] With reference to FIG. 1, the apparatus 10 includes a drive system for moving the housing structure 14 between the first and second positions described above.

[0088] The drive system may comprise any conventional means adapted to achieve the indicated movements of the housing structure 14 .

[0089] In the illustrated embodiment, the device 10 comprises two pairs of drive units 20 arranged on two opposite sides of and supporting the housing structure 14. Each drive unit 20 comprises a pair of guides 22 parallel to a reference axis Z and a slider 24 to which the housing structure 14 is connected. Furthermore, each drive unit 20 comprises a shaft 26 parallel to the reference axis Z, which is driven in rotation by a motor 27 and which engages with an internal threaded bore of the slider 24 such that the rotation of the shaft 26 determines a corresponding movement of the slider along the reference axis Z.

[0090] In operation, the four drive units 20 are synchronized to together drive the movement of the housing structure 14 along the reference axis Z.

[0091] In one or more preferred embodiments, for example, in the illustrated embodiment (see FIGS. 2 and 3), the housing structure 14 includes an inner housing 141 made of a thermal insulating material. Preferably, the inner housing 141 is made of foam, and more preferably, of graphite foam.

[0092] In one or more preferred embodiments, for example in the illustrated embodiment, inner housing 141 comprises a lateral wall 141A extending about a reference axis Z and a cover 141B disposed on top of lateral wall 141A.

[0093] The lateral wall 141A includes two opposing openings 141C, 141D running parallel to the reference axis Z.

[0094] In the above-mentioned first position of the housing structure 14, the inner housing 141 is placed with its lateral wall 141A on the block 12D of the base 12 to receive therein the case 8 and the intermediate ducts 15, 16. At the same time, the openings 141C, 141D receive respectively the post 11 with its associated pylon 42 and the post 13 with its associated pylon 62 by shape coupling such that each opening is closed to the outside by the respective post and pylon.

[0095] In one or more preferred embodiments, for example, in the illustrated embodiment (see FIG. 3), the housing structure 14 also includes an outer housing 142 that surrounds and carries the inner housing 141. Preferably, the outer housing is made of steel.

[0096] The outer housing 142 comprises a closed lateral wall 142A extending about a reference axis Z and a cover 142B placed on top of the closed lateral wall 142. The lateral wall 142A surrounds the lateral wall 141A of the inner housing 141 at a distance so as to create an empty space between the two housings.

[0097] In the above-described first position of the housing structure 14, the outer housing 142 is placed with its lateral wall 142A resting on the plate 12A of the base 12 and receiving the portions of the posts 11, 13 and the pylons 42, 62 protruding from the inner housing 141 within its internal space surrounding the inner housing 141.

[0098] The outer housing 142 is configured to sealingly close to the outside the interior space which it bounds together with the base 12. As described below, during operation, the outer housing 142 is intended to contain a controlled atmosphere of inert gas filling both the inside of the inner housing 141 and the interior space provided between the outer housing 142 and the inner housing 141.

[0099] In one or more preferred embodiments, for example, in the illustrated embodiment, the above-mentioned heater 3 of the heating system is mounted on the cover 142B of the outer housing 142 so as to move together with the housing structure 14 when the housing structure 14 moves from the first position to the second position and vice versa.

[0100] In particular, the heaters 3 are suspended from the cover 142B, extend parallel to the reference axis Z and extend to the inside of the inner housing 141 passing through an opening 141D made on the cover 141B of the inner housing 141, the heaters 3 being mutually arranged according to the above-mentioned two series 3A, 3B and in the above-mentioned relative positions to be found with respect to the opposing walls 81 of the case 8 when the housing structure 14 is in its first position.

[0101] In one or more preferred embodiments, for example in the illustrated embodiment (see FIG. 3), a temperature probe 5 is also mounted on the cover 142B of the outer housing 142, which protrudes into the inside of the inner housing 141 through a corresponding opening 141E made on the cover 141B.

[0102] 9, as mentioned above, the delivery unit 4 is fluidly connected to the supply unit 7 via its inlet 41C for supplying process gas to the delivery unit 4.

[0103] Preferably, the supply unit 7 is configured to supply a predetermined flow rate of process gas to the delivery unit 4, for example the supply unit 7 may include a flow sensor to adjust the flow rate of process gas that the supply unit 7 supplies to the delivery unit 4.

[0104] On the one hand, the extraction unit 6 is fluidly connected via its outlet duct 61C to a pump 70 through the interposition of a pressure control valve 72, for example through the interposition of a throttle valve. The pump 70 is in turn fluidly connected to a system for treating the process exhaust gas. The pump 70 and the pressure control valve 72 together form, in operation, a pressure reduction or vacuum generator which tends to determine a certain minimum pressure in the apparatus. For example, the minimum pressure may be in the range of 10 to 600 mbar.

[0105] In one or more preferred embodiments, the apparatus 10 also includes means for generating a controlled atmosphere 80 inside the housing structure 14 .

[0106] In particular, in one or more preferred embodiments, for example in the illustrated embodiment (see FIG. 3), the plate 12A has at least an inlet 74 that is fluidly connected to the inside of the outer housing 142 and, more specifically, to the internal space provided between the outer housing 142 and the inner housing 141.

[0107] The inlet 74 is connected to a supply unit 78 that supplies the inert gas to the interior of the housing structure 14 via the inlet 74 to form and maintain a controlled atmosphere 80 of the inert gas inside the housing structure 14. The supply unit 78 may include a pressurized tank containing the inert gas associated with a flow control valve for controlling the flow rate of the inert gas supplied by the pressurized tank.

[0108] The inert gas may be, for example, a noble gas such as helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe). Preferably, the noble gas may be argon gas, as it is relatively abundant in the atmosphere. Alternatively, the inert gas may be nitrogen. The inert gas may be provided in a pressurized tank of the supply unit 78.

[0109] Further, the plate 12A is provided with at least an outlet 76 for extracting a controlled atmosphere of inert gas from the housing structure 14, which is in fluid communication with the inside of the housing structure 14 and, more specifically, with the internal space provided between the outer housing 142 and the inner housing 141.

[0110] In one or more preferred embodiments, for example in the illustrated embodiment, the outlet 76 is fluidly connected to the outlet duct 61C of the extraction unit 6, specifically via a pipe fitting 61F provided on the same outlet duct 61C.

[0111] In one or more preferred embodiments, for example in the illustrated embodiment, the outlet 76 is positioned opposite the inlet 74 relative to the inner housing 141; for example, as shown in Figures 3 and 9, the inlet 74 can be positioned adjacent to the delivery unit 4 while the outlet 76 can be positioned adjacent to the extraction unit 6.

[0112] The inert gas flowing into the housing structure 14 via the inlet 74 fills the interior space between the outer housing 142 and the inner housing 141, as well as the interior space of the inner housing 141 around the case 8, where the inner housing 141 is not hermetically closed.

[0113] This means that, in operation, the inner spaces of the two housings 141 and 142 both contain a controlled atmosphere 80 and are at the same pressure.

[0114] In view of the above, it can now be noted that the pump 70 operates in cooperation with the throttle valve 72 to establish a predetermined minimum pressure downstream of the brewing unit 6, and that substantially the same pressure is also established with respect to the controlled atmosphere within the housing structure 14 due to the fluid communication between the area within the housing structure 14 and the area downstream of the brewing unit 6.

[0115] Conversely, along the flow path through the delivery unit 4, the case 8 and the extraction unit 6, the process gas maintains a higher pressure due to a pressure differential that tends to determine the flow of the process gas along the same flow path and up to the above-mentioned region downstream of the extraction unit 6.

[0116] This means that any eventual gas leakage can only occur from the process gas flow path to the controlled atmosphere 80 and not vice versa.

[0117] Any gas that escapes into the controlled atmosphere 80 is then removed along with the inert gas via outlet 76 .

[0118] In this regard, it is important to note that both the high temperatures and the large temperature ranges to which the case 8 and the inner housing 141 are exposed make it technically very difficult to provide a leak-proof hermetic closure for these two structures. In the solution described here, this problem is avoided in either case by the controlled atmosphere 80 created within the housing structure 14, which acts to contain possible gas leaks and purge them via the outlet 76.

[0119] Conversely, the outer housing 142, which must contain the controlled atmosphere 80, is exposed to lower temperatures than the case 8 and inner housing 141 and therefore can be easily provided with a hermetic closure.

[0120] In addition to solving the problem of gas leakage, the controlled atmosphere 80 also serves to protect the equipment components from premature degradation.

[0121] Obviously, provided that the principles of the invention are preserved, the details of construction and aspects of the embodiments may be varied to a considerable extent from those illustrated herein, purely by way of non-limiting example, without departing from the scope of the invention as defined in the appended claims. For example, the device 10 according to the preferred embodiment illustrated in the accompanying drawings may be installed according to different orientations, such that both the reference axis Y and the reference axis Z are horizontal, or such that the reference axis Y is vertical and the reference axis Z is horizontal. [Explanation of symbols]

[0122] 2. Process chamber 2A entrance 2B Exit 3. Radiant Heater 3A Series 3B Series 4 Delivery Units 5 Temperature Probes 6 Extraction Unit 7 Supply Unit 7A end 7B Post 8 Cases 8A entrance 8B Exit 8C Exit Section 8C Entrance Section 8D Center Section 8E Exit Section 8F Fin 10 equipment 11 Post 12 Base 12A Plate 12B First sheet 12C Second seat 12D Insulation Block 13 Post 14 Housing structure 15 Intermediate Duct Section 16 Intermediate Duct Section 20 Drive unit 22 Guide 24 Slider 26 Shaft 27 Motor 41 Connection part 41A Outer flange 41C Entrance 41D Entrance 41E Exit 42 Delivery Pylon 42A Baffle Plate 42B Housing 42C Cover 42D First Seal 42E Second Seal 42F Third Seal 42G Peripheral Edge 42H end part 42I Conduit Section 44 Cooling pipe 44 Inner cooling pipe 61 Connection part 61A Outer flange 61B Container body 61C outlet pipe 61D Entrance 61E Exit 61F Pipe Fittings 62 Extraction Pylon 62A Baffle Plate 62B Housing 62C Exit Duct 63 Inner liner 63' Hole 64 Cooling pipe 70 Pump 72 Pressure Control Valve 74 Entrance 76 Exit 78 Supply Unit 80 Atmosphere 81 Wall 81C upstream end part 81D Concave cylindrical part 81E part 82 End closure 82C part 82D central part 101 Base material 141 Inner housing 141A Side wall 141B Cover 141C opening 141D opening 141E opening 142 Outer housing 142A Side wall 142B Cover

Claims

1. An apparatus (10) for manufacturing semiconductor devices of the type comprising a substrate (101) and a film applied thereon by a chemical vapor deposition (CVD) process, comprising: a process chamber (2) for positioning a substrate (101)(101') along a first reference axis (Z), said substrate (101) lying in parallel planes substantially perpendicular to said first reference axis (Z); a heating system for heating said process chamber (2) to a predetermined internal temperature; a delivery unit (4) for delivering a process gas to said process chamber (2); an exhaust gas extraction unit (6) for extracting process exhaust gases from said process chamber (2), the apparatus comprises a case (8) enclosing the process chamber (2) and having an inlet (8A) for receiving the process gas discharged by the delivery unit (4) and an outlet (8B) for directing the process exhaust gas towards the exhaust gas extraction unit (6), the apparatus (10) being configured to establish a pressure difference between the inlet (8A) and the outlet (8B) which generates a gas flow across the case (8) from the inlet (8A) to the outlet (8B) and across the substrate (101′) arranged in the process chamber (2), a housing structure (14) adapted to surround said case (8) and separate it from the outside; an inlet (74) and an outlet (76) in fluid communication with the inside of said housing structure (14); a supply unit (78) for supplying an inert gas to the inside of said housing structure (14) via said inlet (74) and for creating a controlled atmosphere (80) of inert gas within said housing structure (14).

2. The cases (8) are arranged in series along a second reference axis. an inlet section (8C) including said inlet (8A), a central section (8D) surrounding said process chamber (2); - an outlet section (8E) including said outlet (2B).

3. 3. The apparatus according to claim 2, wherein the case (8) has a cross-sectional flow area which is enlarged in the central section (8D) relative to the inlet and outlet sections (8C, 8E) such that the velocity of the gas flow in the central section (8D) is lower than in the inlet and outlet sections (8C, 8E).

4. 4. The apparatus of claim 2 or 3, wherein the case (8) has a cross-sectional flow area whose dimension along the first reference axis (Z) is uniform and constant throughout the inlet section, the central section, and the outlet section (8C, 8D, 8E).

5. 5. The apparatus of claim 1, wherein the inlet section (8C) comprises a linear series of fins (8F) extending along the first reference axis (Z), the fins facing the inlet (8a) and evenly spaced along the first reference axis (Z) to evenly distribute the gas flow entering the case inlet (8A) to a plurality of positions corresponding to the position of the substrate (101) in a linear configuration (101').

6. 6. An apparatus as claimed in any one of claims 1 to 5, wherein the case (8) comprises a pair of opposing walls (81) generally extending together along the second reference axis (Y), and a pair of end closures (82) attached to edges of the pair of walls (81) that face each other along the first reference axis (Z).

7. Based on the second reference axis (Y), each of the pair of opposing walls (81) having an upstream flat portion (81C), a downstream flat portion (81E) and a central concave cylindrical portion (81D) having a convex side facing the outside of the case (8); Each of the pair of end closures (82) has an upstream end flat portion (82C), a downstream end flat portion (82E), and a central flat portion (82D); The pair of walls (81) and the pair of end closures (82) comprise: the upstream end flat portions (81C) of the pair of opposing walls (81) and the upstream end flat portions (82C) of the pair of end closures (82) together form an inlet section (8C) of the case (8) which includes the inlet (8A); the central portion (81D) of the pair of opposing walls (81) and the central portion (82D) of the pair of end closures (82) together form a central section (8D) of the case (8) surrounding the process chamber (2); 7. The apparatus of claim 6, wherein the downstream end flat portions (81E) of the pair of opposing walls (81) and the downstream end flat portions (82E) of the pair of end closures (82) are assembled together to together form an outlet section (8E) of the case (8) including the outlet (8B).

8. The device according to any one of the preceding claims, wherein the case (8) is made of a thermally conductive material, preferably graphite or silicon carbide, and the heating system is arranged to heat the case.

9. 9. The device according to claim 8, wherein the heating system comprises a heater (3) for generating thermal radiation for heating the case (8).

10. 10. The device according to claim 9, wherein the heating system comprises two series (3A, 3B) of radiant heaters (3) arranged on the outside of the case (8) facing and running along a pair of opposing walls (81) of the case (8), the pair of opposing walls (81) generally extending along the second reference axis (Y).

11. 11. The device according to claim 10, wherein each series (3A, 3B) of heaters (3) follows a line (M) along said second reference axis (Y) that coincides with the contour of said respective case wall (81).

12. 12. Apparatus according to claim 10 or 11, wherein the heating system is configured to heat the inlet section (8C) of the case (8) to a higher temperature than the central and outlet sections (8D, 8E) of the case (8).

13. 13. Apparatus according to any one of claims 1 to 12, wherein the delivery unit (4) comprises a baffle plate (42A) having a plurality of orifices through which the process gas is discharged, the baffle plate (42A) being set parallel to the inlet (8A) of the case and perpendicular to the second reference axis (Y).

14. 14. The device according to claim 1, wherein the exhaust gas extraction unit (6) comprises a baffle plate (62A) having a plurality of orifices through which the exhaust gas is extracted, the baffle plate (62A) being set parallel to the outlet (8B) of the case (8) and perpendicular to the second reference axis (Y).

15. 15. Apparatus according to any one of the preceding claims, wherein the delivery unit (4) comprises cooling pipes for cooling the process gas being delivered and / or the exhaust gas extraction unit (6) comprises cooling pipes for cooling the process exhaust gas being extracted.

16. an intermediate duct (15) fluidly connecting said delivery unit (4) to said inlet (8A) of said case (8) and at the same time spatially separating said former from said latter, and / or an intermediate duct (16) fluidly connecting said exhaust gas extraction unit (6) to said outlet (8B) of said case (8) and at the same time spatially separating said former from said latter; The apparatus according to any one of claims 1 to 15, comprising:

17. Apparatus according to any one of the preceding claims, wherein said first reference axis (Z) is vertical and said second reference axis (Y) is horizontal.

18. the apparatus further comprising a pressure reduction generator (70, 72) fluidly connected to the exhaust gas extraction unit (6) and to the outlet (76) and configured, in operation, to determine a predetermined minimum pressure in the controlled atmosphere (80) within the housing structure (14) that is below the pressure of the gas flow across the case (8). Apparatus according to any one of claims 1 to 17.

19. a base (12) supporting the case (8), the delivery unit (4) and the exhaust gas extraction unit (6), 19. The device of claim 18, wherein the housing structure (14) is movable along the first reference axis (Z) relative to the base (12) between a first position in which the housing structure (14) and the base (12) are coupled together and separate the case (8) from the outside, and a second position in which the housing structure (14) is detached from the base (12) and the case (8) is accessible from the outside.

20. A method for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied thereon by a chemical vapor deposition (CVD) process, comprising the steps of: - positioning the substrate (101) in a linear configuration (101') along a first reference axis (Z) of the process chamber (2) and according to an orientation in which said substrate (101) lies in a parallel plane perpendicular to said first reference axis (Z); heating said process chamber (2) to a predefined internal temperature by means of a heating system; - delivering a process gas to said process chamber (2) by means of a delivery unit (4), delivering the process gases to the process chamber (2) to undergo a CVD process to form films on the substrates (101) of the linear arrangement (101') and generating process exhaust gases; - extracting the process exhaust gases produced in the process chamber (2) by means of an exhaust gas extraction unit (6), The method comprises providing a case (8) surrounding the process chamber (2) and having an inlet (2A) for receiving the process gas discharged by the delivery unit (4) and an outlet (2B) for directing the process exhaust gas towards the exhaust gas extraction unit (6), and comprising: generating a gas flow across the case (8) from the inlet (2A) to the outlet (2B) and covering all of the substrates (101) arranged in the linear arrangement (101') by moving along a second reference axis (Y) transversely to the first reference axis (Z) and across the substrates linear arrangement (101') arranged in the process chamber (2).

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