A hybrid liquid / air cooling system for TCP windows.

Abstract

A dielectric window assembly for a substrate processing system includes a dielectric window, a Faraday shield adjacent to the dielectric window, embedded within the dielectric window, or recessed in an upper surface of the dielectric window, and a cooling channel disposed within the Faraday shield, the cooling channel configured to flow a coolant across the Faraday shield.

Description

[Technical field]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 147,802, filed February 10, 2021. The above application is hereby incorporated by reference in its entirety.

[0002] The present disclosure relates to a gas distribution apparatus for a substrate processing system. [Background technology]

[0003] The background description provided herein is intended to provide a general overview of the contents of the present disclosure. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be regarded as prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] In the manufacture of substrates, such as semiconductor wafers, etching and deposition processes may be performed in a processing chamber. The substrate is placed on a substrate support, such as an electrostatic chuck (ESC) or a pedestal, in the processing chamber. Process gases are introduced through a gas distribution system and a plasma is generated in the processing chamber. Summary of the Invention

[0005] A dielectric window assembly for a substrate processing system includes a dielectric window, a Faraday shield adjacent to the dielectric window, embedded within the dielectric window, or recessed in an upper surface of the dielectric window, and a cooling channel disposed within the Faraday shield, the cooling channel configured to flow a coolant across the Faraday shield.

[0006] In other features, the Faraday shield is adjacent to the dielectric window. The dielectric window includes a recess defined in an upper surface of the dielectric window, and the Faraday shield is disposed within the recess. The upper surface of the Faraday shield is coplanar with the upper surface of the dielectric window. The upper surface of the Faraday shield is non-coplanar with the upper surface of the dielectric window.

[0007] In other features, the Faraday shield is embedded within the dielectric window. The dielectric window comprises a bottom plate, a top plate, and a cavity defined between the bottom plate and the top plate. The Faraday shield is disposed within the cavity between the bottom plate and the top plate. The cooling channel comprises a copper tube. The dielectric window is generally planar. The dielectric window is dome-shaped and includes a generally planar interior region and a curved exterior region.

[0008] In other features, the gas distribution assembly includes a dielectric window assembly and a gas plate disposed below the dielectric window, the plenum being defined between the dielectric window and the gas plate. The cooling channel includes a plurality of rings and at least one connecting rod providing fluid communication between each of the plurality of rings.

[0009] In other features, the system includes a dielectric window assembly and a liquid cooling system in fluid communication with the cooling channels, the liquid cooling system configured to supply a coolant to the cooling channels via a supply conduit, and an air cooling system configured to circulate air around an exterior region of the dielectric window.

[0010] The system includes a dielectric window assembly for a substrate processing chamber. The dielectric window assembly includes a dielectric window having an interior region and an exterior region, and a Faraday shield disposed at the interior region of the dielectric window and adjacent to the dielectric window, embedded within the dielectric window, or disposed in a recess in a top surface of the dielectric window. A cooling channel disposed within the Faraday shield is configured to flow a coolant across the Faraday shield. An air cooling system is configured to circulate air around the exterior region of the dielectric window.

[0011] In other features, the dielectric window is dome-shaped with an interior region that is generally flat and an exterior region that is curved. The system further comprises a gas plate disposed below the dielectric window, defining a plenum between the dielectric window and the gas plate. The cooling channel comprises a plurality of rings and at least one connecting rod that provides fluid communication between each of the plurality of rings. The system further comprises a liquid cooling system in fluid communication with the cooling channel. The liquid cooling system is configured to supply a coolant to the cooling channel via a supply tube.

[0012] A dielectric window assembly for a substrate processing system includes a dielectric window and at least one cooling channel disposed within the dielectric window, the at least one cooling channel configured to flow a coolant across the dielectric window.

[0013] In other features, the at least one cooling channel includes a plurality of cooling channels. The cooling channel comprises a disk-shaped cavity defined in a body of the dielectric window. The dielectric window is made of ceramic, and the cooling channel is defined in the ceramic. At least one pillar is disposed in the cooling channel. The at least one pillar extends from a lower surface of the cooling channel to an upper surface of the cooling channel.

[0014] In other features, the system includes a dielectric window assembly, a liquid cooling system in fluid communication with the at least one cooling channel and configured to supply a coolant to the at least one cooling channel via a supply tube, and an air cooling system configured to circulate air around an exterior area of ​​the dielectric window.

[0015] Other areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0016] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0017] [Figure 1] FIG. 1 is a functional block diagram of a substrate processing system including a gas distribution apparatus according to the present disclosure.

[0018] [Figure 2A] FIG. 2A illustrates an exemplary dielectric window with a Faraday shield in accordance with the present disclosure. [Figure 2B] FIG. 2B illustrates an exemplary dielectric window with a Faraday shield in accordance with the present disclosure. [Figure 2C] FIG. 2C illustrates an exemplary dielectric window with a Faraday shield in accordance with the present disclosure.

[0019] [Figure 3A] FIG. 3A illustrates an exemplary domed dielectric window with a Faraday shield in accordance with the present disclosure.

[0020] [Figure 3B] FIG. 3B illustrates an exemplary cooling channel of the dielectric window of FIG. 3A.

[0021] [Figure 3C] FIG. 3C is an isometric view of the dielectric window of FIG. 3A.

[0022] [Figure 3D] FIG. 3D illustrates an example of a dielectric window with cooling channels defined within the material of the dielectric window.

[0023] [Figure 4A] FIG. 4A illustrates an exemplary cooling channel configuration according to the present disclosure. [Figure 4B] FIG. 4B is a diagram illustrating an exemplary cooling channel configuration according to the present disclosure. [Figure 4C] FIG. 4C illustrates an exemplary cooling channel configuration according to the present disclosure.

[0024] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The substrate processing system may include a gas distribution apparatus (e.g., a showerhead) disposed on a lid or top surface of the processing chamber. In a processing chamber configured for performing transformer coupled plasma (TCP) processing, the gas distribution apparatus may correspond to a gas distribution assembly including a gas plate (e.g., a showerhead plate) disposed opposite the interior of the processing chamber and a dielectric window disposed on top of the gas plate. The dielectric window may be substantially flat or, in some examples, may be dome-shaped. A plenum may be defined between the gas plate and the dielectric window. A process gas is supplied to the processing chamber through the gas distribution apparatus, and a plasma is generated inside the processing chamber. For example, an RF signal is transmitted from a TCP coil through the dielectric window to the interior of the processing chamber. The RF signal transmitted from the TCP coil heats the dielectric window.

[0026] In some examples, the temperature of the gas distribution assembly may be controlled to minimize mechanical stress, maintain process uniformity, etc. For example, a plenum may be placed above the dielectric window such that air circulates through the plenum to cool the dielectric window. In some systems, a relatively high airflow (e.g., 200 cubic feet per minute (CFM) or more per process chamber) may be required to adequately cool the dielectric window, resulting in undesirable noise levels. Additionally, as the power of the RF signal increases, the temperature and mechanical stress also increase, and high airflow may not provide sufficient cooling.

[0027] The gas distribution assembly according to the present disclosure implements a temperature control system that improves cooling of the dielectric window, improves temperature distribution, and reduces system noise and mechanical stress caused by high temperatures. For example, the dielectric window includes a Faraday shield adjacent to or embedded within the dielectric window. At least one of the Faraday shield and the dielectric window may include cooling channels configured to flow a cooling fluid (e.g., water).

[0028] Referring now to FIG. 1, an example of a substrate processing system 100 according to certain embodiments of the present disclosure is shown. The substrate processing system 100 includes a coil driver circuit 112. As shown, the coil driver circuit 112 includes an RF power source 114 and a tuning circuit 116. The tuning circuit 116 may be directly connected to one or more inductive transformer coupled plasma (TCP) coils 118. Alternatively, the tuning circuit 116 may be connected to one or more coils 118 by an optional inversion circuit 120. The tuning circuit 116 tunes the output of the RF power source 114 to a desired frequency and / or a desired phase, matches the impedance of the coils 118, and splits the power between the TCP coils 118. The inversion circuit 120 is used to selectively switch the polarity of the current through one or more TCP coils 118. In some examples, the coil driver circuit 112 implements a transformer coupled capacitively tuned (TCCT) matching network to drive the TCP coils 118.

[0029] The gas distribution device or assembly 122 includes a showerhead (e.g., gas plate) 124 and a dielectric window 126. Although illustrated as generally flat, in some examples, the dielectric window 126 may be dome-shaped. For example, a plenum may be defined between the gas plate 124 and the dielectric window 126. The gas plate 124 is disposed between the dielectric window 126 and the processing chamber 128. In some embodiments, the dielectric window 126 includes a ceramic. In some embodiments, the gas plate 124 is made of a ceramic or other dielectric material.

[0030] The processing chamber 128 further includes a substrate support (or pedestal) 132. The substrate support 132 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. In operation, process gas is supplied to the processing chamber 128 through the gas plate 124 (e.g., a plurality of holes through the gas plate) to generate a plasma 140 inside the processing chamber 128. For example, an RF signal is transmitted from the TCP coil through the dielectric window 126 to the interior of the processing chamber 128. The RF signal excites gas molecules in the processing chamber 128 to generate the plasma 140. The plasma 140 etches the exposed surface of the substrate 134. An RF power supply 150 and a bias matching circuit 152 may be used to bias the substrate support 132 and control ion energy during operation.

[0031] A gas delivery system 154 may be used to supply process gas mixtures to the processing chamber 128. The gas delivery system 154 may include process and inert gas sources 156 (e.g., including deposition gases, etching gases, carrier gases, inert gases, etc.), gas metering systems 158-1 and 158-2 (e.g., mass flow controllers (MFCs)), such as valves and flow ratio controllers, and respective manifolds 160-1 and 160-2. For example, the gas metering system 158-1 and manifold 160-2 may be arranged to supply an etching gas mixture to the processing chamber 128 during etching, and the gas metering system 158-2 and manifold 160-2 may be arranged to supply a deposition gas mixture to the processing chamber 128 during deposition. For example, the etching and deposition gas mixtures may be supplied to the plenum of the gas plate 124 through the coil 118 and through respective passages of the dielectric window 126. A heater / cooler 162 may be used to heat / cool the substrate support 132 to a predetermined temperature. An exhaust system 164 includes a valve 166 and a pump 168 to remove reactants from the process chamber 128 by purging or evacuation.

[0032] A controller 170 may be used to control the etching process. The controller 170 monitors system parameters and controls the delivery of gas mixtures, plasma ignition, plasma maintenance and extinguishing, reactant removal, and the like. Additionally, the controller 170 may control various aspects of the coil driver circuit 112, the RF power supply 150, the bias matching circuit 52, and the like. In some embodiments, the substrate support 132 is temperature adjustable. In certain embodiments, the temperature controller 172 may be connected to a number of heating elements 174, such as thermal control elements (TCEs), disposed on the substrate support 132. The temperature controller 172 may be used to control the number of heating elements 174 to control the temperature of the substrate support 132 and the substrate 134.

[0033] A dielectric window 126 according to the present disclosure may include a Faraday shield (not shown in FIG. 1 ) adjacent to or embedded within the dielectric window 126. As described in more detail below, at least one of the Faraday shield and the dielectric window 126 may include cooling channels configured to flow a cooling fluid.

[0034] 2A, a dielectric window assembly including an exemplary dielectric window 200 according to the present disclosure is shown. The dielectric window 200 includes a Faraday shield 204. For example, the Faraday shield 204 may be made of copper. A showerhead or gas plate 208 is supported on a sidewall 212 of a processing chamber (e.g., processing chamber 128 of FIG. 1), and the dielectric window 200 is disposed on the gas plate 208. In this example, the dielectric window 200 includes a bottom plate 216 and a top plate 220 disposed on the bottom plate 216. A cavity 224 is defined between the bottom plate 216 and the top plate 220. The Faraday shield 204 is disposed in the cavity 224. Thus, the Faraday shield 204 is embedded within the dielectric window 200 between the bottom plate 216 and the top plate 220. In some examples, a thermal grease or gel may be placed in the cavity 224 between the Faraday shield 204 and the surface of the dielectric window 200 .

[0035] Conversely, as shown in FIG. 2B, the top surface 228 of the dielectric window 200 may include a recess 232, and the Faraday shield 204 may be disposed in the recess 232. For example, the Faraday shield 204 may be secured to the dielectric window 200 using fasteners such as ceramic screws, thermal adhesive, or the like. In one example, the Faraday shield 204 is secured to the dielectric window 200 by screws, and thermal grease or gel is interposed between the Faraday shield 204 and the dielectric window 200. (As shown in FIG. 2B) The top surface 236 of the Faraday shield 204 may be slightly above or below (i.e., vertically offset from) the top surface 228 of the dielectric window 200. In another example, the top surface 236 of the Faraday shield 204 may be at the same height (i.e., coplanar) as the top surface 228 of the dielectric window 200.

[0036] 2C, the Faraday shield 204 is disposed on the dielectric window 200 (i.e., on the top surface 228 of the dielectric window 200). For example, the Faraday shield 204 may be secured to the dielectric window 200 using fasteners such as ceramic screws, thermal adhesive, or the like. In one example, the Faraday shield 204 is secured to the dielectric window 200 by screws, and thermal grease or gel is disposed between the Faraday shield 204 and the dielectric window 200.

[0037] Although shown as generally flat in Figures 2A, 2B, and 2C, the exemplary dielectric window 300 with the Faraday shield 304 may be dome-shaped, as shown in Figure 3A. For example, the Faraday shield 304 may be made of copper. A showerhead or gas plate 308 is supported on a sidewall 312 of a processing chamber (e.g., processing chamber 128 of Figure 1), and the dielectric window 300 is disposed on the gas plate 308. The dielectric window 300 defines a plenum 316 between the dielectric window 300 and the gas plate 308. Any of the exemplary arrangements of the Faraday shield 204 of Figures 2A, 2B, and 2C may be implemented with a dome-shaped dielectric window 300.

[0038] 3A , the top surface 320 of the dielectric window 300 includes a recess 324, and the Faraday shield 304 is disposed within the recess 324. For example, the dielectric window 300 includes a generally flat interior region 328 and a curved or arcuate exterior region 332. The recess 324 is defined within the flat interior region 328.

[0039] The Faraday shield 304 may be secured to the dielectric window 300 using fasteners such as ceramic screws, thermal adhesive, or the like. In one example, the Faraday shield 304 is secured to the dielectric window 300 by screws, with thermal grease or gel interposed between the Faraday shield 304 and the dielectric window 300. The top surface 336 of the Faraday shield 304 may be slightly above or below (i.e., vertically offset from) the top surface 320 of the dielectric window 300. In another example, the top surface 336 of the Faraday shield 304 may be flush with (i.e., coplanar with) the top surface 320 of the dielectric window 300.

[0040] The Faraday shield 304 includes cooling channels 340 configured to flow a cooling liquid (e.g., a coolant such as water) to control the temperature of the dielectric window 300. A liquid cooling system 344 (e.g., a liquid storage tank in fluid communication with the cooling channels 340 via associated valves, flow controllers, etc.) supplies the coolant to the cooling channels 340 via one or more supply tubes 348. For example, the coolant flows from the liquid cooling system 344 to the cooling channels 340 via one tube 348 and from the cooling channels 340 back to the liquid cooling system 344 via another tube 348. The supply tubes 348 may be made of the same material as the cooling channels 340 (e.g., aluminum) or may be made of a different material.

[0041] In one example, the cooling channels 340 comprise aluminum tubing embedded within the Faraday shield 304. In another example, the cooling channels 340 are channels engraved or machined directly into the material of the Faraday shield 304. In this example, the coolant is in direct contact with the material of the Faraday shield 304. In examples where the cooling channels 340 are formed directly within the dielectric window 300, the coolant is in direct contact with the material (e.g., ceramic) of the dielectric window 300.

[0042] A controller 352 (e.g., controller 170, temperature controller 172, etc.) may be configured to control components of the liquid cooling system 344 to supply coolant to the cooling channels 340. For example, the controller 352 receives temperature measurements from one or more temperature sensors 356 on or embedded in the dielectric window 300, Faraday shield 304, etc., and controls the flow of coolant based on the temperature measurements. In other examples, the controller 352 is configured to calculate or predict the temperature of the dielectric window 300.

[0043] The optional air cooling system 360 is configured to circulate air around the exterior region 332 of the dielectric window 300 to provide additional cooling. In other words, the cooling channels 340 may be provided only in the flat interior region 328 of the dielectric window 300, but not in the curved exterior region 332. For example, the curved exterior region 332 may be subject to increased mechanical stress due to temperature fluctuations. Furthermore, structural modifications of the dielectric window 300 in the curved exterior region 332 (e.g., modifications related to portions of the Faraday shield 304, cooling channels 340, etc.) may weaken the dielectric window 300. Thus, by providing the Faraday shield 304 and cooling channels 340 only in the interior region 328 and cooling the exterior region 332 with air, the structural integrity of the dielectric window 300 in the exterior region 332 is maximized.

[0044] The cooling channels 340 may be configured to optimize temperature control of the dielectric window 300. For example, features of the cooling channels 340 that may be configured include, but are not limited to, the diameter of the cooling channels 340, the number of cooling channels 340, the shape of the cooling channels 340 (e.g., cross-section, layout, or pattern, etc.), the fractal pattern of the cooling channels, etc. For example, the pattern of the cooling channels 340 may be configured to achieve uniform residence time of the coolant across different zones of the cooling channels 340. Other parameters that may be configured to optimize temperature control include, but are not limited to, the flow rate of the coolant through the cooling channels 340, the height (i.e., thickness) of the Faraday shield 304, etc. In some examples, the cooling channels 340 may be directly embedded or defined (e.g., engraved) in the dielectric window 300. In some examples where the cooling channels 340 are provided in the dielectric window 300, the Faraday shield 304 may be omitted.

[0045] An example of a cooling channel 340 and supply tubes 348 is shown in more detail in Figures 3B and 3C. In this example, the cooling channel 340 comprises one or more rings (e.g., concentric rings) 364. A plurality of connecting rods (e.g., tubes) 368 provide fluid communication between the rings 364. As shown, the cooling channel 340 comprises two rings 364 (e.g., an inner ring and an outer ring) and eight connecting rods 368. In other examples, the cooling channel 340 may comprise fewer (i.e., one) or more (i.e., three or more) rings 364 and fewer or more connecting rods 368.

[0046] Further optimization of temperature control may be achieved by varying parameters of the rings 364 and connecting rods 368. For example, the number of rings 364 and / or connecting rods 368 may be varied. Other parameters that may be varied include, but are not limited to, the radius of each of the rings 364 and the cross-sectional diameter of the rings 364 and / or connecting rods 368. The cross-sectional diameter of each of the rings 364 may be the same or different.

[0047] As shown, the rings 364 are in fluid communication with each other via connecting rods 368. Thus, the same supply tubes 348 supply coolant to each ring 364. In other examples, different sets of supply tubes 348 may supply coolant to different rings 364. For example, one set of supply tubes 348 may be in fluid communication with one ring 364 (e.g., the outer ring) and another set of supply tubes 348 is in fluid communication with another ring 364 (e.g., the inner ring). In this manner, the flow of coolant to the different rings 364 may be individually controlled. Thus, the temperature of each of the different radial zones of the dielectric window 300 may be individually controlled.

[0048] As described above, in some examples, one or more cooling channels 340 may be embedded or defined directly within the dielectric window 300 (e.g., engraved or machined, such as by an additive manufacturing process), and the Faraday shield 304 may be omitted or not. As shown in the cross-sectional view of FIG. 3D, a single disk-shaped cooling channel or cavity 372 is defined directly within the material (e.g., ceramic) of the dielectric window 300. In other examples, two or more cooling channels 372 may be defined within the dielectric window 300. For example, the cooling channel 372 may comprise two or more concentric, annular cavities or channels that may or may not be in fluid communication with one another. Although illustrated as generally flat, in some examples, the dielectric window 300 of this example may be dome-shaped, as shown in FIGS. 3A and 3C.

[0049] 3A-3C, cooling channels 372 are configured to flow a coolant or coolant to control the temperature of dielectric window 300. A liquid cooling system 344 supplies the coolant to cooling channels 340 via one or more supply tubes 348. In this example, because cooling channels 372 are defined directly within dielectric window 300 (e.g., within the ceramic body of the dielectric window), supply tubes 348 may be made of a different material than cooling channels 372 (e.g., aluminum).

[0050] Because the cooling channels 372 are formed directly within the dielectric window 300, the coolant is in direct contact with the material of the dielectric window 300 (e.g., the ceramic body of the dielectric window 300). Thus, heat transfer contact between the dielectric window 300 and the coolant within the cooling channels 372 is maximized.

[0051] The dielectric window 300 may include one or more pillars or islands 376 disposed within the cooling channels 372. In one example, the pillars 376 are made of the same material (e.g., ceramic) as the dielectric window 300. The pillars 376 may be integrally formed with the dielectric window 300 or may be formed separately and inserted / attached to the dielectric window 300 within the cooling channels 372 (e.g., after the formation of the cooling channels 372). The pillars 376 extend from a lower surface 380 of the cooling channels 372 to an upper surface 384 of the cooling channels 732 (i.e., to the back side of the upper surface 320 of the dielectric window 300). In this manner, the pillars 376 provide mechanical support to the upper surface 384 of the dielectric window 300. Although illustrated as cylindrical, in other examples, the pillars 376 may be of a different shape.

[0052] 4A, 4B, and 4C, exemplary configurations of cooling channels 400 according to the present disclosure are shown. The cooling channels 400 are configured to provide uniform residence time of the cooling fluid across different zones and minimize temperature gradients in the dielectric window. The pattern / layout of the cooling channels 400 may incorporate fractal designs to achieve uniform residence time. In a first configuration shown in FIG. 4A, the cooling channels 400 are arranged in multiple rings 404 (e.g., an inner ring, a middle ring, and an outer ring). The rings 404 are in fluid communication with each other via connecting rods 408. As shown, the spacing of the rings 404 is uniform, but in other examples, the spacing of the rings 404 may not be uniform.

[0053] 4B , the cooling channel 400 comprises one or more rings 412 fluidly connected by a number of radial connecting rods 416. As shown, the connecting rods 416 are arranged in spokes to define a number of azimuthal zones 420. The zones 420 may be of uniform size (as shown) or may not be uniform. The one or more zones 420 may include an arrangement of internal connecting rods 424 that fluidly connect adjacent connecting rods 416 to each other and to corresponding sections of the ring 412.

[0054] 4C, the cooling channel 400 comprises one or more rings 428 bisected by one or more connecting rods 432. As shown, the connecting rods 432 extend in the Y direction in the XY plane and bisect the ring 428 into two zones 436 (e.g., left and right zones in the X direction). The connecting rods 432 supply coolant to respective cooling channel grids 440 in each zone 436.

[0055] The foregoing description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be embodied in various forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be limited to such examples, since other modifications will become apparent upon review of the drawings, specification, and claims that follow. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of these features described with respect to any embodiment of the present disclosure may be implemented in other embodiments and / or combined with any features of the other embodiments (even if such combination is not explicitly described). In other words, the described embodiments are not mutually exclusive, and it is within the scope of the present disclosure to substitute one or more embodiments for one another.

[0056] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Also, in the above disclosure, when a relationship between a first element and a second element is described, unless expressly described as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element. However, there may also be an indirect relationship in which one or more intervening elements (spatial or functional) exist between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted in the sense of a logic (A or B or C) using a non-exclusive logical OR, and not in the sense of "at least one of A, at least one of B, and at least one of C."

[0057] In some implementations, the controller is part of a system, and such a system may be part of the examples described above. Such a system may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operations before, during, and after processing of a semiconductor wafer or substrate. This electronics may be referred to as a "controller" and may control various components or subparts of the system or systems. The controller may be programmed to control any of the processes disclosed herein depending on the processing requirements and / or type of system. Such processes may include delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer loading and unloading from the tool, and wafer loading and unloading from other transport tools and / or load locks connected or interlocked with the particular system.

[0058] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers, that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0059] The controller, in some embodiments, may be part of a computer that is integrated or coupled with the system or otherwise networked to the system, or may be coupled to such a computer, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a fab host computer system. This allows remote access of wafer processing. The computer may allow remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, set processing steps following a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Thus, as discussed above, the controller may be distributed, for example, by having one or more individual controllers that are networked together and cooperate toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that couple to control the process on the chamber.

[0060] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0061] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material transport to and from tool locations and / or load ports within a semiconductor manufacturing factory.

Claims

1. 1. A dielectric window assembly for a substrate processing system, comprising: A dielectric window; A Faraday shield, a Faraday shield that is either (i) adjacent to the dielectric window, (ii) embedded within the dielectric window, or (iii) disposed in a recess in an upper surface of the dielectric window; a cooling channel disposed within the Faraday shield; The cooling channel is configured to flow a coolant across the Faraday shield.

2. 2. The dielectric window assembly of claim 1, The dielectric window assembly, wherein the Faraday shield is adjacent to the dielectric window.

3. 2. The dielectric window assembly of claim 1, A dielectric window assembly, wherein the dielectric window includes a recess defined in an upper surface of the dielectric window, and the Faraday shield is disposed in the recess.

4. 4. The dielectric window assembly of claim 3, A dielectric window assembly, wherein a top surface of the Faraday shield is coplanar with a top surface of the dielectric window.

5. 4. The dielectric window assembly of claim 3, A dielectric window assembly, wherein a top surface of the Faraday shield is not coplanar with a top surface of the dielectric window.

6. 2. The dielectric window assembly of claim 1, The dielectric window assembly, wherein the Faraday shield is embedded within the dielectric window.

7. 7. The dielectric window assembly of claim 6, The dielectric window is The bottom plate and The upper plate and a cavity defined between the bottom plate and the top plate; The Faraday shield is disposed within the cavity between the bottom plate and the top plate, a dielectric window assembly.

8. 2. The dielectric window assembly of claim 1, The dielectric window assembly, wherein the cooling channel comprises a copper tube.

9. 2. The dielectric window assembly of claim 1, A dielectric window assembly, wherein the dielectric window is substantially flat.

10. 2. The dielectric window assembly of claim 1, A dielectric window assembly, wherein the dielectric window is dome-shaped and includes a generally flat inner region and a curved outer region.

11. 11. A gas distribution assembly comprising the dielectric window assembly of claim 10, a gas plate disposed below the dielectric window; A gas distribution assembly, wherein a plenum is defined between the dielectric window and the gas plate.

12. 2. The dielectric window assembly of claim 1, The cooling channel comprises a plurality of rings and at least one connecting rod providing fluid communication between each of the plurality of rings.

13. 13. A system comprising the dielectric window assembly of claim 1, a liquid cooling system in fluid communication with the cooling channel; The liquid cooling system is configured to supply a coolant to the cooling channel via a supply pipe.

14. 14. The system of claim 13, The system further comprising an air cooling system configured to circulate air around an exterior area of ​​the dielectric window.

15. 1. A system comprising:

1. A dielectric window assembly for a substrate processing chamber, comprising: a dielectric window having an interior region and an exterior region; a Faraday shield disposed within the interior region of the dielectric window, the Faraday shield being either (i) adjacent to the dielectric window, (ii) embedded within the dielectric window, or (iii) disposed in a recess in an upper surface of the dielectric window; a cooling channel disposed within the Faraday shield and configured to flow a coolant across the Faraday shield; and an air cooling system configured to circulate air around the exterior area of ​​the dielectric window; A system comprising:

16. 16. The system of claim 15, The system, wherein the dielectric window is dome-shaped, the interior region is generally flat, and the exterior region is curved.

17. 16. The system of claim 15, The system further comprising a gas plate disposed below the dielectric window, a plenum being defined between the dielectric window and the gas plate.

18. 16. The system of claim 15, The system, wherein the cooling channel comprises a plurality of rings and at least one connecting rod providing fluid communication between each of the plurality of rings.

19. 16. The system of claim 15, The system further comprising a liquid cooling system in fluid communication with the cooling channel, the liquid cooling system configured to supply a coolant to the cooling channel via a supply conduit.

20. 1. A dielectric window assembly for a substrate processing system, comprising: A dielectric window; at least one cooling channel disposed within the dielectric window; The cooling channel is configured to flow a coolant across the dielectric window.

21. 21. The dielectric window assembly of claim 20, The at least one cooling channel comprises a plurality of cooling channels.

22. 21. The dielectric window assembly of claim 20, The dielectric window assembly, wherein the cooling channel comprises a disk-shaped cavity defined within a body of the dielectric window.

23. 23. The dielectric window assembly of claim 22, A dielectric window assembly, wherein the dielectric window is made of a ceramic and the cooling channels are defined within the ceramic.

24. 23. The dielectric window assembly of claim 22, The dielectric window assembly further comprising at least one pillar disposed within the cooling channel, the at least one pillar extending from a lower surface of the cooling channel to an upper surface of the cooling channel.

25. 1. A system comprising:

21. The dielectric window assembly of claim 20; a liquid cooling system in fluid communication with at least one of the cooling channels and configured to supply a coolant to the at least one cooling channel via a supply conduit; and an air cooling system configured to circulate air around an exterior area of ​​the dielectric window.

26. The dielectric window assembly of claim 1, the cooling channel comprises a plurality of rings connected via a plurality of supply tubes; The coolant flows through the plurality of rings and the plurality of supply tubes.

27. The dielectric window assembly of claim 1, the plurality of channels comprising a ring and a first plurality of connecting rods arranged in spokes defining a plurality of azimuthal zones.

28. The dielectric window assembly of claim 27, comprising: the plurality of azimuthal zones comprising the ring and a second plurality of connecting rods connected to the first plurality of connecting rods.

29. The dielectric window assembly of claim 1, the plurality of channels comprising a ring bisected by a first connecting rod; 30. The dielectric window assembly of claim 29, The connecting rod supplies coolant to a grid of cooling channels.

31. The dielectric window assembly of claim 20, a plurality of struts extending through the at least one cooling channel from a lower surface of the at least one cooling channel to an upper surface of the at least one cooling channel; The at least one cooling channel includes only a single cooling channel.

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