Movable disk with openings for etching control

Abstract

The processing chamber includes a grid and a first disk. The grid includes a plurality of holes and is disposed in the processing chamber. The grid divides the processing chamber into a first chamber in which a plasma is generated and a second chamber in which a pedestal is configured to support a substrate. The first disk is disposed in the second chamber. The first disk is movable between the grid and the substrate when the substrate is supported on the pedestal.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 63 / 191,036, filed May 20, 2021. The entire disclosures of the above-referenced applications are incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates generally to substrate processing systems, and more particularly to a movable disk having apertures for etch control in a substrate processing system. [Background technology]

[0003] The Background Art provided herein is provided to present the contents of the present disclosure generally, and the inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure to the extent that they are described in this Background Art section and in a descriptive manner that is not prior art at the time of filing.

[0004] Substrate processing tools typically include multiple stations for performing deposition, etching, and other processes on substrates, such as semiconductor wafers. Examples of processes that can be performed on a substrate include, but are not limited to, chemical vapor deposition (CVD) processes, chemically enhanced plasma deposition (CEPVD) processes, plasma enhanced chemical vapor deposition (PECVD) processes, sputtering physical vapor deposition (PVD) processes, atomic layer deposition (ALD), and plasma enhanced ALD (PEALD). Further examples of processes that can be performed on a substrate include, but are not limited to, etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) processes and cleaning processes.

[0005] During processing, the substrate is placed in the station on a substrate support, such as a pedestal. During deposition, a gas mixture including one or more precursors is introduced into the station, and a plasma may be generated to activate a chemical reaction if necessary. During etching, a gas mixture including an etching gas is introduced into the station, and a plasma may be generated to activate a chemical reaction if necessary. A computer-controlled robot typically transports the substrates from one station to another in the order in which the substrates are processed. Summary of the Invention

[0006] The processing chamber includes a grid and a first disk. The grid includes a plurality of holes and is disposed within the processing chamber. The grid divides the processing chamber into a first chamber in which a plasma is generated and a second chamber in which a pedestal is configured to support a substrate. The first disk is disposed within the second chamber. The first disk is movable between the grid and the substrate when the substrate is supported on the pedestal.

[0007] In another feature, the first disk is movable parallel to the grid.

[0008] In another feature, the first disk blocks ions from the plasma from reaching the substrate.

[0009] In another feature, the first disk includes at least one or more apertures.

[0010] In another feature, the first disk includes an adjustable aperture.

[0011] In another feature, the first disk includes an adjustable aperture and a second aperture of a fixed size.

[0012] In another feature, the first disk is made of a material selected from the group consisting of diamond-like carbon (C), tantalum (Ta), molybdenum (Mo), aluminum (Al), alumina (Al2O3), chromium (Cr), beryllium (Be), tantalum carbide (TaC), and lead zirconate titanate (PZT) ceramic.

[0013] In another feature, the first disk has a smaller diameter than the substrate.

[0014] In another feature, the processing chamber further comprises a second disk disposed in the second chamber, the second disk movable parallel to the grid between the grid and the substrate.

[0015] In another feature, the first disc and the second disc are coplanar.

[0016] In another feature, the first disc and the second disc have the same shape.

[0017] In another feature, the first disc and the second disc have different shapes.

[0018] In another feature, at least one of the first disc and the second disc includes one or more apertures.

[0019] In another feature, at least one of the first disc and the second disc includes an adjustable aperture.

[0020] In another feature, the first disc and / or the second disc includes an adjustable aperture and the first disc and / or the second disc includes a second aperture of a fixed size.

[0021] In another feature, a system includes a process chamber, an actuator for moving the first disk, and a controller for controlling the actuator.

[0022] In another feature, the system includes a process chamber, a voltage source for supplying a voltage to the grid, an actuator for moving the first disk, and a controller for controlling the voltage supplied to the grid and for controlling the actuator.

[0023] In another feature, a system includes a process chamber in which a first disk includes an adjustable aperture, an actuator for moving the first disk and adjusting the adjustable aperture, and a controller for controlling the actuator.

[0024] In another feature, a system includes a processing chamber, a first actuator and a second actuator for moving the first disk and the second disk, respectively, and a controller for controlling the first actuator and the second actuator.

[0025] In another feature, a system includes a processing chamber, where at least one of a first disk and a second disk includes an adjustable opening, a first actuator and a second actuator for moving the first disk and the second disk, respectively, and adjusting the adjustable opening, and a controller for controlling the first actuator and the second actuator.

[0026] In another feature, a system includes a processing chamber, a first actuator for moving the first disk, a second actuator for rotating the pedestal, and a controller for controlling the first actuator and the second actuator.

[0027] In another feature, a system includes a processing chamber in which a first disk includes an adjustable opening, a first actuator for moving the first disk and adjusting the adjustable opening, a second actuator for rotating the pedestal, and a controller for controlling the first actuator and the second actuator.

[0028] In another feature, the system includes a processing chamber, a first actuator and a second actuator for moving the first disk and the second disk, respectively, a third actuator for at least one of rotating and tilting the pedestal, and a controller for controlling the first actuator, the second actuator, and the third actuator.

[0029] In another feature, the system includes a processing chamber, where at least one of the first disk and the second disk includes an adjustable opening, a first actuator and a second actuator for moving the first disk and the second disk, respectively, and adjusting the adjustable opening, a third actuator for at least one of rotating and tilting the base, and a controller for controlling the first actuator, the second actuator, and the third actuator.

[0030] Further areas of applicability of the present disclosure will be apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the disclosure. [Brief description of the drawings]

[0031] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0032] [Figure 1A] 1 illustrates an example of a substrate processing system that includes a processing chamber that generates an inductively coupled plasma (ICP) to process a substrate.

[0033] [Figure 1B] 1 illustrates an example of a substrate processing system that includes a process chamber that generates a capacitively coupled plasma (CCP) to process a substrate.

[0034] [Figure 2A]1A and 1B for accelerating ions from a plasma during substrate processing. [Figure 2B] 1A and 1B for accelerating ions from a plasma during substrate processing.

[0035] [Diagram 3] 1C is an example of a disk that can be moved between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to change the etch profile of the substrate.

[0036] [Figure 4] 1C is an example of a disk having an aperture that can be moved between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to modify the etch profile of the substrate.

[0037] [Figure 5A] FIG. 1C is an example of a disk that can be moved radially between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to adjust the etch rate of the substrate. [Figure 5B] 1C is an example of a disk that can be moved radially between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to adjust the etch rate of the substrate.

[0038] [Figure 6A] 1C is another example of a disk that is radially movable between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to adjust the etch rate of the substrate. [Figure 6B] 1C is another example of a disk that is radially movable between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to adjust the etch rate of the substrate.

[0039] [Figure 7]An example of a disk including an opening that is movable between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B to etch different regions of the same substrate under different process conditions.

[0040] [Figure 8] An example of a system including two disks that are movable between the plasma and the patterned substrate in the processing chamber of FIG. 1A or FIG. 1B to etch features of the substrate.

[0041] [Figure 9] Examples of disks comprising openings and mechanisms for adjusting the openings that can be used in the processing chamber of FIG. 1A or FIG. 1B, as shown in FIGS. 3 - 8.

[0042] [Figure 10] Another example of a disk having an adjustable opening that can be used in the processing chamber of FIG. 1A or FIG. 1B, as shown in FIGS. 3 - 8.

[0043] [Figure 11A] An example of a system for moving a disk between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B and adjusting the size of the opening of the disk to perform various operations shown in FIGS. 3 - 8. [Figure 11B] An example of a system for moving a disk between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B and adjusting the size of the opening of the disk to perform various operations shown in FIGS. 3 - 8. [Figure 11C] An example of a system for moving a disk between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B and adjusting the size of the opening of the disk to perform various operations shown in FIGS. 3 - 8. [Figure 11D] An example of a system for moving a disk between the plasma and the substrate in the processing chamber of FIG. 1A or FIG. 1B and adjusting the size of the opening of the disk to perform various operations shown in FIGS. 3 - 8.

[0044] In the drawings, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0045] In a substrate processing system, various methods are used to control the etching process. For example, a processing chamber in which the etching process is performed on a substrate may include a first chamber in which a plasma is generated and a second chamber in which the substrate is placed on a pedestal. A grid (e.g., a disk or plate with holes) may be placed between the first and second chambers to accelerate ions from the plasma to the substrate. To achieve etching uniformity at the substrate, control is usually applied from the plasma side. For example, an electromagnetic (EM) field may be applied to the plasma using one or more electromagnets. However, when the EM field is applied or changed, not only does the ion distribution change, but also some other plasma parameters change at the same time. The same plasma conditions cannot be maintained at two different EM field settings. Furthermore, when an electromagnet located in the center of the processing chamber is used to adjust the etching uniformity, the plasma density may change only in the center region of the substrate and not at the edge of the substrate. Furthermore, the EM field changes the ion divergence, plasma potential, and grid focus. Alternatively, etching can be controlled by adjusting the grid voltage, modifying ion scattering by controlling the flow / pressure in the process chamber, etc. However, these techniques introduce difficulties in recipe tuning and chamber matching since one or more plasma parameters are changed at the same time.

[0046] Unlike the above mentioned methods of controlling etching from the plasma side, the present disclosure provides a system to control etching without disturbing the plasma. The present disclosure provides an independent adjustment knob for center to edge etching profile adjustment. The system can adjust the etching profile to any desired shape without affecting the plasma characteristics. The adjustment knob can adjust the ion flux to the substrate without changing the plasma parameters. As will be explained in more detail below, the etching profile can be adjusted to any desired shape by introducing a disk between the plasma and the substrate (particularly between the grid and the substrate) to block some ions from reaching the substrate. The disk can be moved across (i.e., laterally or parallel) the substrate and / or the substrate can be rotated. Apertures can be added to the disk so that etching occurs only at certain locations on the substrate. Instead of using different substrates to complete the recipe, many different process conditions can be performed on the same substrate by aligning the apertures at different positions on the substrate. Multiple disks, with and without apertures, can be used in combination. These and other features of the present disclosure are explained in more detail below.

[0047] The present disclosure is organized as follows. First, an example of a substrate processing system that can use one or more disks is shown and described with reference to Figures 1A and 1B. An example of a grid used in the processing chamber of Figures 1A and 1B is shown and described with reference to Figures 2A and 2B. An example of a disk with or without apertures is shown and described with reference to Figures 3 and 4. An example of adjusting an etch rate using a disk is shown and described with reference to Figures 5A-6B. An example of a disk with one or more apertures that can be used to etch portions of the same substrate under different process conditions is shown and described with reference to Figure 7. An example of a system including multiple disks used to etch features of a patterned substrate is shown and described with reference to Figure 8. An example of a disk with variable apertures is shown and described with reference to Figures 9 and 10. An example of a system for laterally moving a disk and adjusting the size of the holes in the disk is shown and described with reference to Figures 11A-11D.

[0048] 1A illustrates a substrate processing system 100 according to the present disclosure. The substrate processing system 100 includes a processing chamber 102. The processing chamber 102 generates an inductively coupled plasma (ICP) as described below. The processing chamber 102 includes a pedestal 104. The pedestal 104 includes a base 106 and a stem 108. The stem 108 extends vertically downward from a central region of the base 106. During processing, a substrate 110 is disposed on the base 106. A suitable clamping system (e.g., a vacuum clamp) (not shown) is used to secure the substrate 110 to the base 106 of the pedestal 104 during processing.

[0049] The actuator 112 is connected to the stem 108 of the pedestal 104. The actuator 112 has two or more degrees of freedom. The actuator 112 can move the pedestal 104 vertically along an axis perpendicular to the plane of the substrate 110. The actuator 112 can also rotate the pedestal 104 about the axis. Additionally, the actuator can tilt the pedestal 104 relative to the axis.

[0050] The process chamber 102 includes a gas injector 120 that injects one or more gases into the process chamber 102. The gas injector 120 receives one or more gases from a gas supply system 124. The gas supply system 124 includes one or more gas sources 130-1, 130-2, ..., and 130-N (collectively, gas sources 130), where N is a positive integer. The gas sources 130 are connected to a manifold 136 by valves 132-1, 132-2, ..., and 132-N (collectively, valves 132) and mass flow controllers 134-1, 134-2, ..., 134-N (collectively, mass flow controllers 134). The manifold 136 is connected to the gas injector 120.

[0051] The coil 140 is disposed around the top of the processing chamber 102. An RF generating system 142 provides RF power to the coil 140. The RF generating system 142 includes an RF generator 144 and a matching network 146. The RF generator 144 generates RF power. The matching network 146 matches the impedance of the RF generator 144 to the impedance of the coil 140. The matching network 146 outputs the RF power to the coil 140. A first end of the coil 140 is connected to the RF generating system 142 (i.e., the matching network 146). A second end of the coil 140 is grounded. The RF power from the coil 140 ignites one or more gases injected by the gas injector 120 into the top region of the processing chamber 102 to generate a plasma 148.

[0052] The grid 150 is disposed in the process chamber 102 between the gas injector 120 and the pedestal 104. The grid 150 essentially separates (i.e., divides) the process chamber 102 into an upper chamber 160 and a lower chamber 162. Generally, the upper chamber 160 and the lower chamber 162 may be referred to as a first chamber 160 and a second chamber 162, respectively. A plasma 148 is generated in the upper chamber 160 as described above. The pedestal 104 and the substrate 110 are located in the lower chamber 162. The grid 150 separates the pedestal 104 and the substrate 110 from the plasma 148 in the upper chamber 160. The plasma 148 is not generated in the lower chamber 162.

[0053] For example, the grid 150 may include a single plate having holes 152-1, 152-2, ..., and 152-N (collectively, holes 152), where N is an integer greater than 1. Alternatively, as shown and described with reference to Figures 2A and 2B, the grid 150 may include a plurality of parallel plates having holes aligned with each other. The grid 150 is attached to the sidewall of the processing chamber 102 using a plurality of mounting brackets 151-1 and 151-2 (collectively, mounting brackets 151) and corresponding fasteners 153-1 and 153-2 (collectively, fasteners 153). The mounting brackets 151 are electrically insulating. The mounting brackets 151 electrically insulate the grid 150 from the sidewall of the processing chamber 102.

[0054] The grid 150 is biased by a voltage source 154 to control the flow of ions from the plasma 148 to the substrate 110. The biasing of the grid 150 is shown and described in further detail with reference to Figures 2A and 2B. Briefly, the voltage source 154 supplies one or more voltages to a first end of the grid 150. A second end of the grid 150 is grounded. By controlling the voltage supplied to the grid 150 by the voltage source 154, ions from the plasma 148 can be accelerated to a selected energy level. Once accelerated to the selected energy level, the ions pass through holes 152 in the grid 150 to the substrate 110 in the lower chamber 162.

[0055] A disk 170 attached to rods 172 can be moved laterally between the grid 150 and the substrate 110 using an actuator 174. Examples of actuators 174 are shown and described in more detail with reference to Figures 11A-11D. The disk 170 can modify the flow of ions from the plasma 148 to the substrate 110 in a number of ways. For example, the disk 170 can be solid (i.e., without apertures). In some examples, the disk 170 can include an aperture 176. Various examples of disks 170 with and without apertures 176 are shown and described in more detail with reference to Figures 3-11D.

[0056] Simply put, the disk 170 can selectively prevent some ions that pass through the grid 150 into the lower chamber 162 from reaching the substrate 110 and altering the etch profile of the substrate 110. In some examples, the apertures 176 can allow some ions that pass through the grid 150 to continue onto selected regions of the substrate 110. Thus, the etch profile of the substrate 110 can be controlled by selectively managing which ions are allowed to reach the substrate 110.

[0057] The disk 170 may be made of a low sputter material. Non-limiting examples of such materials include diamond-like carbon (DLC) and heavy metals (i.e., metals with relatively high atomic numbers that do not generate secondary electron emissions when collided with ions from the plasma 148) such as tantalum (Ta) and molybdenum (Mo). In general, the disk 170 may be made of materials including, but not limited to, DLC, Ta, Mo, aluminum (Al), alumina (Al2O3), chromium (Cr), beryllium (Be), tantalum carbide (TaC), and lead zirconate titanate (PZT) ceramics.

[0058] As shown and described in detail with reference to FIGS. 3-11D, in some examples, the disk 170 may be relatively small in size (e.g., diameter) compared to the substrate 110. In other examples, the disk 170 may be relatively large in size compared to the substrate 110 (e.g., slightly smaller in diameter than the substrate 110). In some examples, the disk 170 may include one or more apertures. In other examples, one or more disks (with or without apertures) controlled by respective actuators may be disposed between the grid 150 and the substrate 110. Examples of actuators are shown and described in detail with reference to FIGS. 11A-11D. In some examples, the disk 170 may move and the substrate 110 may rotate. In other examples, the disk 170 may move and the substrate 110 may be stationary and / or tilted. These features are described in more detail with reference to FIGS. 3-11D.

[0059] A pump 180 is connected to the processing chamber 102 via a valve 182. The pump 180 and valve 182 may control the pressure in the processing chamber 102 during processing and evacuate reactants from the processing chamber 102. A system controller 190 may control the components of the substrate processing system 100 described above.

[0060] 1B illustrates a substrate processing system 200 according to the present disclosure. The substrate processing system 200 includes a processing chamber 202. The processing chamber 202 generates a capacitively coupled plasma (CCP) as described below. Several components of the substrate processing system 200 are similar to components of the substrate processing system 100 previously shown and described with reference to FIG. 1A. These similar components of the substrate processing system 200 are designated with the same reference numbers used in the substrate processing system 100. These components will not be described again for the sake of brevity.

[0061] The processing chamber 202 includes a gas distribution apparatus 204, such as a showerhead, for introducing and distributing process gases into the processing chamber 202. The showerhead 204 may include a stem with one end connected to a top plate of the processing chamber 202. The base of the showerhead 204 is generally cylindrical and flares radially outward from an opposite end of the stem away from the top plate of the processing chamber 202. A substrate-facing surface or faceplate of the base of the showerhead 204 includes a plurality of holes (not shown) through which process gases flow. A manifold 136 of the gas distribution system 124 is connected to the showerhead 204.

[0062] The showerhead 204 and the pedestal 104 are used as upper and lower electrodes, respectively, to generate plasma. For example, RF power from the RF generating system 142 is applied to the showerhead 204 and the pedestal 104 is grounded. For example, the pedestal 104 may be DC grounded or AC grounded, or may be floating. Alternatively, RF power from the RF generating system 142 is applied to the pedestal 104 and the showerhead 204 is grounded. For example, the showerhead 204 may be DC grounded or AC grounded, or may be floating.

[0063] The grid 150 is disposed in the processing chamber 202 between the showerhead 204 and the pedestal 104. The grid 150 essentially separates the processing chamber 202 into an upper chamber 160 and a lower chamber 162. A plasma 148 is generated in the upper chamber 160 by applying RF power to the showerhead 204 or the pedestal 104 as described above. The remaining components of the substrate processing system 200 have been described with reference to FIG. 1A and will not be described again for the sake of brevity.

[0064] Figures 2A and 2B show an example of a grid 150 used in the processing chambers 102 and 202 shown in Figures 1A and 1B. Figure 2A shows a schematic of the arrangement of multiple plates of the grid 150 and the power supplied to the plates of the grid 150 by a voltage source 154. Figure 2B shows a cross-sectional side view of the plates of the grid 150 attached to a frame 220 to form the grid 150 (also referred to as a grid assembly 150 or a grid system 150).

[0065] In FIG. 2A, for example, grid 150 includes three plates 150-1, 150-2, and 150-3 arranged parallel to each other. For simplicity of illustration, frame 200 is omitted in FIG. 2A and shown instead in FIG. 2B. Plate 150-1 faces plasma 148. Plate 150-3 faces substrate 110. For example, distance d1 between plates 150-1 and 150-2 is smaller than distance d2 between plates 150-2 and 150-3. For example, the ratio of d1:d2 may be about 1:2. Holes 152 in plates 150-1, 150-2, and 150-3 are aligned with each other.

[0066] 2B shows a cross-sectional view of grid 150 attached to a frame 220. For example, plates 150-1, 150-2, and 150-3 are attached to a frame 220 made of an electrically insulating material to form a grid assembly (or grid system) 150. Frame 220, including plates 150-1, 150-2, and 150-3, is attached to the sidewalls of processing chambers 102 and 202 using mounting brackets 151 and fasteners 153, as shown in FIGS. 1A and 1B.

[0067] 2A , for example, voltage source 154 applies a positive DC voltage +V1 to plate 150-1 to accelerate ions from plasma 148. For example, +V1 may have a maximum value of about +2000 V. Voltage source 154 applies a negative DC voltage −V2 to plate 150-2 to focus ions. For example, −V2 may have a maximum value of about −1000 V. Plate 150-3 is grounded to prevent electric fields formed around plates 150-1 and 150-2 from interfering with the processing of substrate 110.

[0068] 3-11D, various configurations and arrangements of disk 170 are shown and described. These configurations and arrangements of disk 170 may be employed in the process chambers 102 and 202 shown in FIGS. 1A and 1B. Throughout this disclosure, disk 170 and opening 176 are shown and described as being circular in shape. However, disk 170 and opening 176 may have other shapes. For example, disk and opening 176 may be polygonal.

[0069] 3 shows an example of a disk 170. For example, the disk 170 is relatively small in size compared to the substrate 110. For example, the diameter of the disk 170 is less than half the diameter of the substrate 110. The disk 170 can move between the grid 150 and the substrate 110 parallel to the grid 150 and the substrate 110. The substrate 110 can also be rotated by rotating the pedestal 104 while the disk 170 moves. The etching of the substrate 110 can be more selectively controlled since the entire surface of the substrate 110 can be selectively covered by moving the disk 170 radially across the substrate 110, controlling the speed of the disk 170, and / or controlling the rotation of the substrate 110.

[0070] For example, disk 170 can be moved and / or substrate 110 can be rotated to selectively block some ions from passing through grid 150 from substrate 110, thereby preventing ions from reaching certain areas of substrate 110 at certain times during the etching process. Blocking ions using disk 170 reduces the etch rate in areas of substrate 110 that are covered (obstructed) by disk 170 and thus not bombarded by ions due to the obstruction of ions by disk 170. Different etch profiles can be achieved on substrate 110 using disk 170, as described in more detail below with reference to Figures 5-8.

[0071] Typically, the etching process is controlled by varying the gas flows, the accelerating voltage of the grid 150, etc., which may disturb the plasma 148. Controlling the etching process with the disk 170, on the other hand, does not disturb the plasma 148, since the parameters related to the plasma are not changed to control the etching process.

[0072] FIG. 4 shows an example of a disk 170 that includes an aperture 176. The description of FIG. 4 is similar to that of FIG. 3, except that the disk 170 is not entirely solid or transparent to ions. Instead, only the solid portion of the disk 170 blocks the ions, and the aperture 176 in the disk 170 allows the ions to pass through to the substrate 110. The aperture 176 provides further control to the etching process and allows for further shaping of the etching profile in the substrate 110. Using the solid portion of the disk 170 to block the ions reduces the etch rate in the corresponding areas of the substrate 110 that are covered (blocked) by the solid portion of the disk 170. Conversely, allowing the ions to pass through the aperture 176 increases the etch rate in the corresponding areas of the substrate 110.

[0073] The aperture 176 is shown in the center of the disk 170 by way of example only. The aperture 176 can instead be located elsewhere on the disk 170. Additionally, the size of the aperture 176 (i.e., the opening of the aperture 176, or the amount of opening of the aperture 176) can be controlled (varied) as described in more detail below with reference to FIGS. 11A-11D. Additionally, although not shown, the disk 170 can include multiple apertures 176. The multiple apertures 176 can have different geometries (e.g., shapes and sizes). The multiple apertures 176 can be arranged in any manner on the disk 170 depending on the requirements of the etching process to be performed on the substrate 110. Additionally, in some examples, the disk 170 can include one adjustable aperture and at least one aperture having a fixed size.

[0074] 5A-6B show examples of etch rate adjustments of the substrate 110 that can be achieved by moving the disk 170 between the grid 150 and the substrate 110 in different ways. FIG 5A shows an example of etch rate adjustments of the substrate 110 that can be achieved by moving the disk 170 between the grid 150 and the substrate 110. For example, the disk 170 can be moved radially outwardly from above the center of the substrate 110 in small increments as follows during an etching process performed on the substrate 110 in a processing chamber (e.g., element 102 or 202 shown in FIGS. 1A and 1B):

[0075] By way of example only, during the etching process, the disk 170 is initially held in a first position above the center of the substrate 110 for about 10% of the total process time. Alternatively, any other percentage of the total process time may be used. Then, while the etching process continues, the disk 170 moves radially outward a first predetermined distance from above the center of the substrate 110 to a second position. By way of example only, the first predetermined distance may be about one-quarter of the radius of the substrate 110. Alternatively, the first predetermined distance may be any other percentage of the radius of the substrate 110. By way of example only, the disk 170 is held in the second position for about 20% (or any other percentage) of the total process time.

[0076] Then, while the etching process continues, the disk 170 moves radially outward a second predetermined distance from the second position to a third position. By way of example only, the second predetermined distance may be about one-quarter (or any other percentage) of the radius of the substrate 110. By way of example only, the disk 170 is held in the third position for about 30% (or any other percentage) of the total process time.

[0077] Then, while the etching process continues, the disk 170 moves radially outward a third predetermined distance from the third position to a fourth position. By way of example only, the third predetermined distance may be about one-quarter (or any other percentage) of the radius of the substrate 110. By way of example only, the disk 170 is held in the fourth position for about 40% (or any other percentage) of the total process time.

[0078] Also, throughout the etching process, the substrate 110 may be rotated while the disk 170 moves as described above. The above-described movement of the disk 170 results in the linear center-to-edge etch rate adjustment shown in Figure 5B. Alternatively, the disk 170 may be moved in any other manner (direction, speed of movement, number of steps, distance per step, duration per step, etc.) to achieve any other etch rate adjustment, depending on the process.

[0079] Additionally, although not shown in FIG. 5A, the disks 170 may include apertures 176. In some examples, the size of the apertures 176 may vary (e.g., as shown and described in more detail below with reference to FIGS. 9-11D). In other examples, one or more disks 170 with or without one or more apertures 176 (of variable or fixed size) may be moved in different ways (e.g., as shown and described in more detail below with reference to FIG. 8) to achieve complex etch profiles on the substrate 110.

[0080] 6A illustrates another example of etch rate adjustment of the substrate 110 that can be achieved by moving the disk 170 between the grid 150 and the substrate 110. For example, the disk 170 can be moved radially outward and inward (i.e., back and forth) in small increments from above the center of the substrate 110 in a stepwise manner as follows during an etching process performed on the substrate 110 in a processing chamber (element 102 or 202 shown in FIGS. 1A and 1B ):

[0081] By way of example only, during the etching process, the disk 170 is initially held in a first position above the center of the substrate 110 for approximately 25% (or any other percentage) of the total process time. Then, while the etching process continues, the disk 170 moves radially outward a first predetermined distance from above the center of the substrate 110 to a second position. By way of example only, the first predetermined distance may be a fraction of the radius of the substrate 110. For example, the disk 170 is held in the second position for a predetermined percentage of the total process time.

[0082] Then, while the etching process continues, the disk 170 moves radially inward (i.e., toward the center of the substrate 110) a second predetermined distance from the second position to a third position. For example, the second predetermined distance may be a fraction of the radius of the substrate 110. For example, the disk 170 is held in the third position for a predetermined percentage of the total process time.

[0083] Then, while the etching process continues, the disk 170 moves radially outward a third predetermined distance from the third position to a fourth position. For example, the third predetermined distance may be a fraction of the radius of the substrate 110. For example, the disk 170 is held in the fourth position for a predetermined percentage of the total process time.

[0084] Then, while the etching process continues, the disk 170 moves radially inward a fourth predetermined distance from the fourth position to a fifth position. For example, the fourth predetermined distance may be a fraction of the radius of the substrate 110. For example, the disk 170 is held in the fourth position for a predetermined percentage of the total process time.

[0085] In some examples, the predetermined distances between each of the above-mentioned steps of movement of the disk 170 may be equal. In other examples, the predetermined distances may be selected to produce a desired etch profile in the substrate 110. In some examples, the predetermined percentages of the total process time between each of the above-mentioned steps of movement of the disk 170 may be equal. In other examples, the predetermined percentages of the total process time may be selected to produce a desired etch profile in the substrate 110.

[0086] Also, throughout the etching process, the substrate 110 may be rotated while the disk 170 moves as described above. The movement of the disk 170 described above results in the W-shaped velocity modulation shown in Figure 6B. Alternatively, the disk 170 may be moved in any other manner (e.g., using any other movement sequence and duration, and / or by changing the direction, movement speed, number of steps, distance per step, duration per step, etc.) to achieve any other etch rate modulation, depending on the process.

[0087] Additionally, although not shown in FIG. 6A, the disks 170 may include apertures 176. In some examples, the size of the apertures 176 may vary (e.g., as shown and described in more detail below with reference to FIGS. 9-11D). In other examples, one or more disks 170 with or without one or more apertures 176 (of variable or fixed size) may be moved in different ways (e.g., as shown and described in more detail below with reference to FIG. 8) to achieve complex etch profiles on the substrate 110.

[0088] 7 illustrates another example of a disk 170 including an aperture 176. For example, the disk 170 is relatively larger in size than the disk 170 illustrated in FIGS. 5A-6B. For example, the diameter of the disk 170 may be slightly smaller than the diameter of the substrate 110. For example, the diameter of the disk 170 may be greater than half the diameter of the substrate 110 but smaller than the diameter of the substrate 110. The disk 170 may move between the grid 150 and the substrate 110 parallel to the grid 150 and the substrate 110.

[0089] The disk 170 can be moved to different positions. At each position, a different etching process can be performed on the substrate 110. Or, at each position, the same etching process can be performed under different conditions (e.g., different process time, different acceleration voltage of the grid 150, etc.). Thus, different regions of the substrate 110 can be etched using different etching processes or process conditions. This feature is useful for trying different recipes on the same substrate 110 or for fine-tuning a recipe. This feature can also be used to create complex etching profiles on the substrate 110.

[0090] For example, when the disk 170 is in a first position, a first region of the substrate 110 is etched using a first process or first process conditions. The disk 170 then moves to a second position and the substrate 110 is etched using a second process or second process conditions of the same process. The disk 170 then moves to a third position and the substrate 110 is etched using a third process or third process conditions of the same process. Although not shown, in some examples, the disk 170 may include multiple apertures 176, and the size of one or more of the apertures 176 may be variable (as shown and described with reference to FIGS. 9-11D). In some examples, the substrate 110 may rotate.

[0091] 8 shows an example of a system using two disks 170-1 and 170-2 between the grid 150 and the substrate 110 during the etching process. The two disks 170-1 and 170-2 are attached to respective rods 172-1 and 172-2. The two disks 170-1 and 170-2 can be moved in the same manner as disk 170, as described above, using respective actuators. An example of an actuator for moving one disk is shown and described below with reference to FIGS. 11A-11D.

[0092] For example, the two disks 170-1 and 170-2 can move in the same direction or in opposite directions between the grid 150 and the substrate 110. By way of example only, the two disks 170-1 and 170-2 are shown to be disposed in the same plane. Alternatively, the two disks 170-1 and 170-2 may be disposed in different planes parallel to the grid 150. Furthermore, although not shown in FIG. 8, at least one of the two disks 170-1 and 170-2 may include one or more apertures 176 as described above. At least one of the two disks 170-1 and 170-2 may include an adjustable aperture. At least one of the two disks 170-1 and 170-2 may include one adjustable aperture and at least one aperture having a fixed size. Furthermore, the two disks 170-1 and 170-2 and their respective apertures may have the same geometry (e.g., size and shape) or different geometries.

[0093] By way of example only, substrate 110 may be patterned to include multiple features, such as pillars 250-1 and 250-2. By way of example only, substrate 110 is shown in a tilted position. However, the teachings of FIG. 8 apply equally to substrates that include other features, and to substrates that are not tilted during the etching process (i.e., substrates that are held parallel to the two disks 170-1 and 170-2).

[0094] For example, because the substrate 110 is tilted relative to the two disks 170-1 and 170-2, the pillar 252-2 is closer to the grid 150 than the pillar 252-1. As a result, the pillar 252-2 receives more ions than the pillar 252-1. Thus, the ion density of the pillar 252-2 is higher than the ion density of the pillar 252-1.

[0095] Each of the pillars 250-1 and 250-2 has two sides. A first side faces toward the center of the substrate 110 and a second side faces toward the outer diameter (OD) of the substrate 110. The first sides of the pillars 250-1 and 250-2 that face toward the center of the substrate 110 are indicated as 256-1 and 258-1, respectively. The second sides of the pillars 250-1 and 250-2 that face toward the OD of the substrate 110 are indicated as 256-2 and 258-2, respectively.

[0096] Because the substrate 110 is tilted, the second side 258-2 of the pillar 252-2 that faces the OD of the substrate 110 receives more ions than the first side 256-1 of the pillar 252-2 that faces the center of the substrate 110. As a result, the second side 258-2 of the pillar 252-2 that faces the OD of the substrate 110 is etched more (i.e., at a higher etch rate) than the first side 256-1 of the pillar 252-2 that faces the center of the substrate 110.

[0097] In general, various etch profiles of the substrate 110 can be achieved by using one or more disks 170 with or without one or more apertures 176, moving the disks 170, adjusting the apertures 176, and holding the substrate 110 in a stationary, rotated, or tilted position. Examples of adjustable apertures and systems for moving the disks 170 and varying the size of the apertures 176 are described in more detail below with reference to Figures 9-11D.

[0098] Figures 9 and 10 show examples of disks with adjustable apertures. Figure 9 details an example disk with a mechanism used to adjust the aperture size of the disk. The mechanism used to adjust the aperture size may be similar to the mechanism used to adjust the aperture of a camera. Figure 10 shows a schematic of another example disk with an adjustable aperture without showing the associated mechanism for adjusting the aperture size.

[0099] 9, an example of a disk 170 having apertures is shown. For example, disk 170 includes an inner ring 300, an outer ring 302, and a number of adjustable blades attached to the inner ring 300 and the outer ring 302 as described below. The inner ring 300 is fixed. The outer ring 302 is rotatable relative to the inner ring 300.

[0100] For example, the first plurality of blades 310-1, 310-2, ..., and 310-5 (collectively, first blades 310) are coupled to the inner ring 300 by respective first pivot assemblies 312-1, 312-2, ..., and 312-5. The first blades 310 are also coupled to the outer ring 302 by respective second pivot assemblies 316-1, 316-2, ..., and 316-5. The second plurality of blades 314-1, 314-2, ..., and 314-5 (collectively, second blades 314) are coupled to the outer ring 302 by respective pivot assemblies (not shown).

[0101] When the outer ring 302 rotates relative to the fixed inner ring 300 (e.g., using the system shown in Figs. 11A-11D), the first blades 310 and the second blades 314 move radially inward or outward, changing the size of the apertures formed by the first blades 310 and the second blades 314. The shape of the apertures becomes more circular as the number of blades increases. Fig. 10 shows another example of a disk 170 with an adjustable aperture 176. Many other types and arrangements of blades may be used to provide the adjustable aperture 176 in the disk 170.

[0102] 11A-11D show an example of a system 350 that can move the disk 170 and adjust the size of the aperture 176 in the disk 170. For example, the system 350 can move along a first axis that is parallel to the rods 172 and also parallel to the grid 150 and the substrate 110, as follows: The system 350 can also increase or decrease the size of the aperture 176 along a second axis that is perpendicular to the first axis, as follows:

[0103] The system 350 includes two motors. A first motor 352 is shown in FIG. 11A and a second motor 354 is shown in FIG. 11C. For example, the first motor 352 and the second motor 354 may be stepper motors. The first motor 352 moves the rod 172 and the disk 170 linearly along a first axis, as described in more detail below. The second motor 354 rotates the rod 172 about the first axis to adjust the size of the aperture 176, as described in more detail below.

[0104] When disks 170 do not include apertures 176, second motor 354 can be omitted. When more than one disk 170 is used, the movement of each disk 170 is controlled by a respective first motor 352, and the size of aperture 176 in each disk 170 (if aperture 176 is included in disk 170) is controlled by a respective second motor 354.

[0105] 11A, for example, rod 172 is cylindrical. Rod 172 includes two sets of teeth. A first set of teeth 360 are disposed on a first half of the surface area of ​​rod 172. The first half of the surface area of ​​rod 172 includes the top half of rod 172 that faces grid 150. Teeth 360 are disposed along the length of rod 172. Teeth 360 are arcuate. Teeth 360 and grooves 361 between them span the circumferential direction of the top half of rod 172.

[0106] Figure 11B shows a longitudinal cross-section of rod 172 taken along line AA shown in Figure 11A. Figure 11B shows the arrangement of teeth 360 and grooves 361 on rod 172. First motor 352 includes a gear 362 attached to its shaft 364. Gear 362 mates with teeth 360 of rod 172 at a first end of rod 172 and moves rod 172 along a first axis parallel to the length of rod 172.

[0107] 11C, rod 172 includes a second set of teeth 370. Teeth 370 are disposed on a second half of the surface area of ​​rod 172. The second half of the surface area of ​​rod 172 includes the bottom half of rod 172 that faces substrate 110. Teeth 370 and grooves 372 between them span the longitudinal axis of the bottom half of rod 172.

[0108] Figure 11D shows a cross-sectional view of rod 172 taken along line BB shown in Figure 11C. Figure 11D shows the arrangement of teeth 370 and grooves 372 on rod 172. Second motor 354 includes a gear 382 attached to its shaft 384. Gear 382 mates with teeth 370 at a first end of rod 172 to rotate rod 172 about a first axis.

[0109] A second end of the rod 172 includes a bracket 390 that extends along the length of the rod 172. The bracket 390 is attached to a fixed inner ring 300 of the disk 170. A rotatable outer ring 302 of the disk 170 includes a third set of teeth 394 on a portion of an upper surface of the outer ring 302. The teeth 370 of the rod 172 mate with the teeth 394 on the upper surface of the outer ring 302. When the second motor 354 rotates the gear 382, ​​the rod 172 rotates about the first axis. The rotation of the rod 172 rotates the outer ring 302. The rotation of the outer ring 302 moves the first blade 310 and the second blade 314, which in turn adjusts the size of the aperture 176.

[0110] While the rod 172 rotates about the first axis, the gear 362 of the first motor 352 remains engaged with the teeth 360. While the first motor 352 moves the rod 172 along the first axis, the gear 382 of the second motor 354 remains engaged with the teeth 370, which remain engaged with the teeth 394. Thus, the rod 172 can move bidirectionally along the first axis independent of the state of the aperture 176 (i.e., without changing the size of the aperture 176). The rod 172 can also rotate about the first axis (i.e., the size of the aperture 176 can be changed) independent of the linear position of the rod 172 along the first axis.

[0111] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in various forms. Thus, while the disclosure includes specific examples, other variations will become apparent upon review of the drawings, specification, and claims below, and the true scope of the disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of those features described with respect to the embodiments of the disclosure can be implemented in other embodiments and / or can be implemented in combination with features of other embodiments (even if the combination is not specified). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the disclosure.

[0112] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "interdigitated," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless expressly stated as "direct," the relationship may be a direct relationship in which there are no other intervening elements between the first element and the second element, but at the same time, it may be an indirect relationship in which there are one or more intervening elements (spatial or functional) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning a logic using a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0113] In some embodiments, the controller is part of a system that may be part of the examples above. Such systems may include processing tools, chambers, processing platforms, and / or semiconductor processing equipment with specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling pre-, during, and post-processing operations of semiconductor wafers or substrates. These electronics may be referred to as "controllers" and may control various components or sub-components of the system. Depending on the processing requirements and / or type of system, the controller may be programmed to control any process disclosed herein, including supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position operation settings, wafer loading and unloading from tools and other transport tools, and / or wafer loading and unloading from load locks connected or coupled to the specific system.

[0114] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0115] In some embodiments, the controller may be part of or connected to a computer that is integrated or connected to the system, or otherwise networked or combined with the system. For example, the controller may be in the "cloud" that allows remote access of wafer processing, or may be all or part of a fab host computer system. The computer may allow remote access to the system to monitor the progress of a manufacturing operation, to study the history of past manufacturing operations, to study trends or performance metrics from multiple manufacturing operations, to modify parameters of a current process, to set up a processing step following a current process, or to start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system over a network that may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to connect to or control. Thus, as noted above, the controller may be distributed, for example by including one or more separate controllers networked together and cooperating toward a common purpose, such as the processes and controls described herein. An example of a controller distributed for such purposes would be one or more integrated circuits of the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and in communication with one or more integrated circuits that cooperate to control the process in the chamber.

[0116] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0117] As noted above, depending on the processing steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. A processing chamber comprising: a grid including a plurality of holes disposed within the processing chamber, the grid dividing the processing chamber into a first chamber in which a plasma is generated and a second chamber in which a pedestal is configured to support a substrate; a first disk disposed in the second chamber, the first disk being laterally movable between the grid and the substrate when the substrate is supported by the pedestal; A processing chamber comprising:

2. 10. The process chamber of claim 1, The first disk is movable parallel to the grid.

3. 10. The process chamber of claim 1, The first disk blocks ions from the plasma from reaching the substrate.

4. 10. The process chamber of claim 1, The first disk includes at least one opening.

5. 10. The process chamber of claim 1, The first disk includes an adjustable opening.

6. 10. The process chamber of claim 1, The first disk includes an adjustable aperture and a fixed size aperture.

7. 10. The process chamber of claim 1, The first disk is made of diamond-like carbon (C), tantalum (Ta), molybdenum (Mo), aluminum (Al), alumina (Al 2 O 3 ), chromium (Cr), beryllium (Be), tantalum carbide (TaC), and lead zirconate titanate (PZT) ceramic.

8. 10. The process chamber of claim 1, The first disk has a diameter smaller than the substrate.

9. 10. The processing chamber of claim 1 further comprising: A processing chamber comprising a second disk disposed in the second chamber, the second disk being movable parallel to the grid between the grid and the substrate.

10. 10. The process chamber of claim 9, The first disk and the second disk are coplanar.

11. 10. The process chamber of claim 9, The first disk and the second disk have the same shape.

12. 10. The process chamber of claim 9, The first disk and the second disk have different shapes.

13. 10. The process chamber of claim 9, The processing chamber, wherein at least one of the first disk and the second disk includes one or more openings.

14. 10. The process chamber of claim 9, The processing chamber, wherein at least one of the first disk and the second disk includes an adjustable opening.

15. 10. The process chamber of claim 9, at least one of the first disk and the second disk includes an adjustable aperture; A processing chamber, wherein at least one of the first disk and the second disk includes an opening of a fixed size.

16. 1. A system comprising: The processing chamber of claim 1 ; an actuator for moving the first disk; A controller for controlling the actuator; A system comprising:

17. 1. A system comprising: The processing chamber of claim 1 ; a voltage source for supplying a voltage to the grid; an actuator for moving the first disk; a controller for controlling the voltage supplied to the grid and for controlling the actuator; A system comprising:

18. 1. A system comprising:

2. The processing chamber of claim 1, wherein the first disk includes an adjustable opening; and an actuator for moving the first disk to adjust the adjustable aperture; A controller for controlling the actuator; A system comprising:

19. 1. A system comprising: The processing chamber of claim 9 ; a first actuator and a second actuator for moving the first disk and the second disk, respectively; a controller for controlling the first actuator and the second actuator; A system comprising:

20. 1. A system comprising:

10. The processing chamber of claim 9, wherein at least one of the first disk and the second disk includes an adjustable aperture; and a first actuator and a second actuator for moving the first disk and the second disk, respectively, to adjust the adjustable aperture; a controller for controlling the first actuator and the second actuator; A system comprising:

21. 1. A system comprising: The processing chamber of claim 1 ; a first actuator for moving the first disk; a second actuator for rotating the base; a controller for controlling the first actuator and the second actuator; A system comprising:

22. 1. A system comprising:

2. The processing chamber of claim 1, wherein the first disk includes an adjustable opening; and a first actuator for moving the first disk and adjusting the adjustable aperture; a second actuator for rotating the base; a controller for controlling the first actuator and the second actuator; A system comprising:

23. 1. A system comprising: The processing chamber of claim 9 ; a first actuator and a second actuator for moving the first disk and the second disk, respectively; a third actuator for at least one of rotating the pedestal and tilting the pedestal; and a controller for controlling the first actuator, the second actuator, and the third actuator; A system comprising:

24. 1. A system comprising:

10. The processing chamber of claim 9, wherein at least one of the first disk and the second disk includes an adjustable aperture; and a first actuator and a second actuator for moving the first disk and the second disk, respectively, to adjust the adjustable aperture; a third actuator for at least one of rotating the pedestal and tilting the pedestal; and a controller for controlling the first actuator, the second actuator, and the third actuator; A system comprising:

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