Probe apparatus and probe control device

Abstract

A probe apparatus and a probe control device are provided, the probe apparatus comprising a functional layer (10), a plurality of probes (20), and at least one signal processing unit (30), the plurality of probes (20) are provided on one side of the functional layer (10), and at least one signal processing unit (30) is provided on the other side of the functional layer (10), each signal processing unit (30) corresponds to at least one probe (20), each probe (20) corresponds to and is electrically connected to one signal processing unit (30), the signal processing unit (30) generates a probe control signal according to a control parameter input by a user, transmits the probe control signal to the corresponding probe (20), the probe (20) performs operation processing on the operated surface according to the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit (30). A three-dimensional probe apparatus including the signal processing unit (30) and the probe (20) is formed.

Description

[Technical field]

[0001] <CROSS REFERENCE TO RELATED APPLICATIONS> This application claims priority to a Chinese patent application filed on December 20, 2021, application number 2021115637690, with the invention title "Probe Apparatus and Probe Control Device," the entire text of which is incorporated herein by reference.

[0002] The present application relates to the field of control, in particular to probe apparatus and probe control devices. [Background technology]

[0003] In the chip industry, the miniaturization of chip devices has always been an important research direction, the production of chips at the 5-nanometer technology node has already been realized, and the research and development of chips at the 3-nanometer technology node has already been successful, but the measurement technology of the chip industry is far behind. Not only are there a lack of inspection means, but the surface measurement speed to reach the nano level is often very slow, which cannot meet the level of online inspection and even random inspection in the chip industry.

[0004] Conventional optical ellipsometer detection technology can detect the three-dimensional structure of the wafer surface with a vertical resolution of less than one nanometer, and is fast enough to be used for online detection; however, the horizontal resolution is still limited to the submicron level, which cannot meet the measurement resolution requirements.

[0005] Scanning probe microscopes (SPMs) can measure three-dimensional structures at the sub-nanometer level, especially several nanometers to several tens of nanometers, with vertical and lateral resolution. However, their measurement speed is very slow, and it is estimated that it takes at least 30 days to completely measure one die on a wafer (DIE). One of the main reasons for the slow measurement speed is that the probe is only a few nanometers to several tens of nanometers away from the surface, allowing it to measure three-dimensional morphology at the nanometer level. In order to avoid the probe colliding with the three-dimensional structure of the measured surface and affecting the measurement accuracy, the probe needs to proceed at an extremely slow speed during measurement.

[0006] Probe techniques can be used to measure physical quantities such as the conductivity of a surface, the photoresist residue on a surface, the distribution of different components on a surface, etc.

[0007] The probes' needle tips are particularly thin, with a radius of curvature of just 2 nanometres, and some contain just a single atom at their tips.

[0008] Applying a very small voltage to the probe, for example 50V, can produce a very high electric field strength at the tip of the probe.

[0009] At this time, the electrons at the needle tip are easily pulled out, forming the electric field emission at the probe tip. The electrons emitted from the electric field formed at the probe needle tip can be used to expose the photoresist, forming electron beam lithography, also called scanning probe lithography (SPL scanning probe lithography). The advantage of scanning probe lithography is that the lithography line is very thin and very suitable for exposing fine line structures at the single nanometer level. The reason for this is that in addition to the very small probe tip emitting electrons to form a single nanometer scale electron beam spot, the energy of the emitted electrons is very low, making it difficult to form electron beam lithography, which is a major problem, namely the proximity effect. Since the proximity effect is eliminated, the problem of the spread of the exposed section after electron beam exposure is eliminated, and the probe electron beam size directly determines the exposed area of ​​the photoresist, forming a single nanometer scale lithography line width.

[0010] However, the problem with probe needle tip electron beam lithography is that the probe needle tip needs to be moved point by point and electron beam exposure needs to be performed for each dot. Because the moving speed of the needle tip is much slower than the electron beam scanning speed of the conventional electron beam lithography machine, the lithography speed of the needle tip is very low and it is not possible to complete large-area lithography in a limited time.

[0011] The three-dimensional morphology measurement, conductivity measurement, and electron emission of the probe can be called the manipulation of the target surface by the probe. Nowadays, the installation of multi-probe arrays allows multiple probes to perform measurement and lithography operations simultaneously, thereby increasing the speed.

[0012] However, increasing the operation speed of the probe array requires the probes to measure quickly, which not only requires accelerating measurements using multiple probes, but also raises the problem of transmitting large amounts of measured signals so that they can be processed in parallel, i.e., the problem of how to extract multi-probe signals with a limited number of lead wires, and the problem of processing signals from a large number of parallel probes in parallel.

[0013] One method of processing multi-lead parallel signals is to multiplex a huge number of leads through a data bus, thereby greatly reducing the number of leads. However, when the number of probes is large, the method of multiplexing alone will result in a significant decrease in signal processing time, which will slow down the signal processing speed and cannot meet the demand for processing speed.

[0014] As can be seen from the above, regardless of the sample surface measurement using parallel probe arrays, electron field emission and induced ion injection, high speed is required, and how to integrate multiple probe arrays and subsequent signal units in parallel to form parallel measurement and signal processing is the key to increasing the measurement speed. Therefore, the inventors have proposed the technical solution of this application to solve the above technical problems. Summary of the Invention

[0015] The object of the present application is to provide a probe apparatus and a probe control device which form a three-dimensional probe apparatus including a signal processing unit and a probe, reduce the wiring between the signal processing unit and the probe, integrate multiple probes and the signal processing unit on different sides of the same functional layer, reduce the effect of heat radiated from the signal processing unit on the probe, and reduce loss of accuracy.

[0016] In order to achieve the above-mentioned object, the present application provides a probe device comprising a functional layer, a plurality of probes, and at least one signal processing unit, wherein the plurality of probes are provided on one side of the functional layer and the at least one signal processing unit is provided on the other side of the functional layer, each of the signal processing units corresponds to at least one of the probes, each of the probes corresponds to and is electrically connected to one of the signal processing units, the signal processing unit generates a probe control signal in accordance with a control parameter input by a user, and transmits the probe control signal to the corresponding probe, the probe performs operation processing on an operated surface in accordance with the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit.

[0017] The present application further relates to a non-contact fixed functional layer, a plurality of probes, and a plurality of signal processing units, the plurality of functional layers including one probe layer and M data processing layers stacked in order from bottom to top, the plurality of probes being provided on a surface of the probe layer away from the data processing layer, a plurality of signal processing units being provided on each of the data processing layers, M being an integer of 1 or more, each of the signal processing units in a first data processing layer corresponding to at least one of the probes, each of the probes corresponding to and electrically connected to one of the signal processing units located on the first data processing layer, and the signal processing unit in the Nth data processing layer among the M data processing layers being at least one in front of the N-1th data processing layer. The signal processing unit in the Nth data processing layer corresponds to and is electrically connected to one of the signal processing units in the N+1th data processing layer, where 1≦N≦M and N is an integer, and the probe device receives control parameters input by the signal processing unit in at least one of the data processing layers to generate probe control signals for each of the probes, and the probe device transmits each of the probe control signals to the corresponding probe via the signal processing unit in the first data processing layer, and the probe performs operation processing on the operated surface according to the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit.

[0018] The present application further provides a probe control device including the above-mentioned probe apparatus and a probe control system connected to the probe apparatus.

[0019] In an embodiment of the present application, a probe device includes a functional layer, a plurality of probes, and at least one signal processing unit, the plurality of probes are provided on one side of the functional layer, and the at least one signal processing unit is provided on the other side of the functional layer, each of the signal processing units corresponds to at least one of the probes, and each of the probes corresponds to and is electrically connected to one of the signal processing units, and the signal processing unit generates a probe control signal according to a control parameter input by a user, and transmits the probe control signal to the corresponding probe, and the probe performs operation processing on the operated surface according to the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit, thereby forming a three-dimensional probe device including the signal processing unit and the probe, reducing the wiring between the signal processing unit and the probe, and integrating the plurality of probes and the signal processing unit on different sides of the same functional layer, thereby reducing the impact of heat radiated from the signal processing unit on the probe, and reducing accuracy loss.

[0020] In one embodiment, M≧2, when the signal processing unit in the first data processing layer receives a probe data signal sent by a corresponding probe, it sends each of the probe data signals to the signal processing unit in the Mth data processing layer, and after the signal processing unit in the Mth data processing layer receives the probe data signals of each of the probes, it processes each of the probe data signals to obtain a data processing result of the operated surface.

[0021] In one embodiment, M≧2, when the signal processing unit in the first data processing layer receives a probe data signal transmitted by a corresponding one of the probes, processes the probe data signal of the corresponding one of the probes to obtain corresponding data processing results of the corresponding one of the probes, and transmits the data processing results of each of the probes to the signal processing unit in the Mth data processing layer; when the signal processing unit in the Mth data processing layer receives the data processing results of each of the probes, it obtains a data processing result of the operated surface based on the data processing results of each of the probes.

[0022] In one embodiment, the probe data signal of each said probe is stored in a corresponding said signal processing unit in the first said data processing layer or in a corresponding said signal processing unit in the Mth said data processing layer.

[0023] In one embodiment, a plurality of through holes are provided in the functional layer, an insulating layer is provided on the inner walls of the through holes, a conductive material is provided in the through holes, each of the signal processing units corresponds to at least one of the through holes, each of the through holes corresponds to one of the signal processing units, the signal processing units are electrically connected to a target probe via the conductive material in the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

[0024] In one embodiment, a plurality of through holes are provided in the functional layer, an insulating layer is provided on the inner wall of the through holes, each of the signal processing units corresponds to at least one of the through holes, each of the through holes corresponds to one of the signal processing units, the signal processing units are electrically connected to a target probe via a lead wire passing through the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

[0025] In one embodiment, the probe comprises a needle head, a cantilever, and a needle tip, and in each of the probes, the needle tip is disposed at the tip portion of the needle head, the needle head is fixed to one end of the cantilever, one end of the cantilever remote from the needle head includes a control input terminal and a signal output terminal, the signal processing unit includes a control output terminal and a signal input terminal, the control input terminal of the cantilever is connected to the control output terminal of the corresponding signal processing unit, and the signal output terminal of the cantilever is connected to the signal input terminal of the corresponding signal processing unit, and the probe controls the needle tip according to the probe control signal received from the control input terminal to perform operation processing on the operated surface, and transmits the obtained probe data signal to the signal input terminal of the connected signal processing unit.

[0026] In one embodiment, the functional layer is a silicon wafer, a piece of glass, a piece of quartz, a wafer, or a printed circuit board.

[0027] In one embodiment, a heat dissipation layer is provided between two adjacent functional layers.

[0028] In one embodiment, the heat dissipation layer is a semiconductor cooling layer.

[0029] In one embodiment, a plurality of through holes are provided in each of the data processing layers, an insulating layer is provided on the inner wall of the through holes, a conductive substance is provided in the through holes, and in each of the data processing layers, each signal processing unit corresponds to at least one of the through holes, each of the through holes corresponds to one of the signal processing units. When 1≤N<M, for each signal processing unit in the Nth data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target signal processing unit in the (N + 1)th data processing layer by the conductive substance in the corresponding through hole, and the target signal processing unit is a signal processing unit corresponding to the signal processing unit in the (N + 1)th data processing layer. When N = 1, for each signal processing unit in the first data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target probe in the probe layer by the conductive substance in the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

[0030] In one embodiment, a plurality of through holes are provided in the functional layer, an insulating layer is provided on the inner wall of the through holes, and in each of the data processing layers, each signal processing unit corresponds to at least one of the through holes, each of the through holes corresponds to one of the signal processing units. When 1≤N<M, for each signal processing unit in the Nth data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target signal processing unit in the (N + 1)th data processing layer by a lead wire passing through the corresponding through hole, and the target signal processing unit is a signal processing unit corresponding to the signal processing unit in the (N + 1)th data processing layer. When N = 1, for each signal processing unit in the first data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target probe in the probe layer by a lead wire passing through the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

[0031] In one embodiment, a plurality of alignment marks are provided on the probe layer, a plurality of the alignment holes are provided on each of the data processing layers, the alignment holes correspond one-to-one to the alignment marks, and the positions of the alignment holes in each of the data processing layers and the corresponding alignment marks on the probe layer correspond in vertical space, thereby providing spatial alignment between the probe layer and each of the data processing layers.

[0032] In one embodiment, the facing surfaces between two adjacent functional layers are provided with a plurality of pairs of matching protrusions and recesses, and the positions of the matching protrusions and recesses of each pair correspond to each other in vertical space, thereby spatially aligning the probe layer and the data processing layer.

[0033] In one embodiment, the probe comprises a needle head, a cantilever and a needle tip, and in each of the probes, the needle tip is disposed at the tip portion of the needle head, the needle head is fixed to one end of the cantilever, one end of the cantilever remote from the needle head includes a control input end and a signal output end, each of the signal processing units includes a signal receiving end, a signal transmitting end, a control output end and a signal input end, the control input end of the cantilever is connected to the control output end of the corresponding signal processing unit in the first data processing layer, and the signal output end of the cantilever is connected to the control output end of the corresponding signal processing unit in the first data processing layer. a signal input end of a unit connected to the signal processing unit in the Nth data processing layer among the M data processing layers, a signal sending end of the signal processing unit is connected to a signal input end of a corresponding signal processing unit in the N+1th data processing layer, and a signal receiving end of the signal processing unit is connected to a control output end of the corresponding signal processing unit in the N+1th data processing layer, and the probe controls the tip according to the probe control signal received from the control input end to perform operation processing on the operated surface, and transmits the obtained probe data signal to the signal input end of the connected signal processing unit. The signal processing unit transmits the received probe data signal to the corresponding signal processing unit in a target function layer, and the target function layer is the data processing layer one level above the data processing layer in which the signal processing unit is located.

[0034] In one embodiment, the functional layer is a silicon wafer, a piece of glass, a piece of quartz, a wafer, or a printed circuit board.

[0035] In one embodiment, each of the probes has a corresponding address, and the corresponding addresses of any two of the probes are different. [Brief description of the drawings]

[0036] [Figure 1-2] 1 is a schematic diagram of a probe device according to a first embodiment of the present application. [Diagram 3-4]2 is a schematic diagram showing an electrical connection between a signal processing unit and a probe in the probe apparatus according to the first embodiment of the present application. FIG. [Figure 5-6] 3 is a schematic diagram showing a signal processing unit and a probe in a probe device according to a first embodiment of the present application, the signal processing unit and the probe being electrically connected via a through hole in a functional layer. FIG. [Figure 7] 1 is a schematic diagram of a probe layout on a probe layer of a probe device according to a first embodiment of the present application. [Figure 8-12] FIG. 4 is a schematic diagram of a probe device according to a second embodiment of the present application. [Figure 13] FIG. 11 is a schematic diagram in which signal processing units between two adjacent data processing layers according to a second embodiment of the present application are connected by a bus. [Figure 14-15] 13 is a schematic diagram showing a second embodiment of the present invention in which a positioning hole is provided in a data processing layer and a positioning mark is provided in a probe layer. FIG. [Figure 16-18] FIG. 11 is a schematic diagram showing a probe device according to a second embodiment of the present application, in which a plurality of pairs of matching convex and concave portions are provided on opposing surfaces of two adjacent functional layers. [Figure 19] FIG. 11 is a schematic diagram showing a probe device according to a second embodiment of the present application, in which signal processing units between two adjacent data processing layers are electrically connected via through holes in the data processing layers. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0037] In the following, in order to better understand the objectives, features and advantages of the present application, each embodiment of the present invention will be described in detail in conjunction with the drawings. It should be understood that the embodiments shown in the drawings are not intended to limit the protection scope of the present invention, but merely to describe the essential spirit of the technical solution of the present invention. In the following description, for the purpose of describing each disclosed embodiment, some specific details will be described in order to fully understand each disclosed embodiment. However, those skilled in the art should recognize that the embodiment may be implemented without one or more of these specific details. In other cases, well-known devices, configurations and techniques related to the present application may not be shown or described in detail to avoid unnecessarily obscuring the description of the embodiment.

[0038] Unless otherwise required by context, throughout the specification and claims, the word "comprises" and variations thereof, such as "including" and "having," are to be understood in their open and inclusive sense, i.e., to be interpreted as "including, but not limited to."

[0039] References throughout the specification to "one embodiment" or "one embodiment" mean that a particular feature, structure, or characteristic described in the embodiment is included in at least one embodiment. Thus, the appearances of "in one embodiment" or "in one embodiment" in various places throughout the specification are not necessarily all referring to the same embodiment. Also, the particular features, structures, or characteristics may be combined in any manner in one or more embodiments.

[0040] As used in this specification and the appended claims, the singular forms "a," "an," and "an" include plural referents unless the context clearly dictates otherwise. The term "or" is generally used in its sense including "and / or" unless the context clearly dictates otherwise.

[0041] In the following description, many directional terms are used to clearly indicate the configuration and operation of the present invention, but terms such as "front," "rear," "left," "right," "outside," "inside," "outward facing," "inward facing," "up," and "down" should be understood as terms of convenience rather than limitations.

[0042] The first embodiment of the present invention relates to a probe device for performing manipulation processing of a manipulated wafer surface, including measurement of physical and chemical quantities of the manipulated wafer surface, scanning probe lithography (SPL), electron generation, photon generation, and ion implantation into the manipulated surface by introducing ions using a probe. Here, the physical and chemical quantities include, but are not limited to, electrical information, mechanical information, magnetic information, optical information, acoustic information, material components, and the like, for example, three-dimensional shape measurement, surface roughness measurement, surface conductivity measurement, surface material component measurement, surface temperature measurement, surface hardness measurement, surface elasticity measurement, surface emitted light measurement, surface luminescence measurement, surface Raman signal measurement, and the like. In scanning probe lithography, when a voltage (e.g., 50V) is applied to the probe and an electric field of high electric field strength is formed at the tip of the probe, electrons at the tip of the needle are easily extracted, and an electric field emission is formed at the tip of the probe. The electrons emitted from the electric field formed at the tip of the probe are used to expose a photoresist to light to form electron beam lithography, and the electrons emitted from the probe can generate secondary electrons on the surface to be operated.

[0043] 1, the probe device includes a functional layer 10, a plurality of probes 20, and a plurality of signal processing units 30. Here, the signal processing unit 30 may have the functions of data processing and data storage.

[0044] A plurality of probes 20 are provided on one side of the functional layer 10, and at least one signal processing unit 30 is provided on the other side of the functional layer 10, and each signal processing unit 30 corresponds to at least one probe 10, and each probe 10 corresponds to and is electrically connected to one signal processing unit 30. Specifically, a plurality of probes 20 and a plurality of signal processing units 30 are provided on both sides of the functional layer 10, and each signal processing unit 30 corresponds to one or more probes 20, and each probe 20 corresponds to only one signal processing unit 30, and each probe 20 is electrically connected to the corresponding signal processing unit 30. Here, each signal processing unit 30 may correspond to the same number of probes 20 and be electrically connected to the corresponding probes 20, or each signal processing unit 30 may correspond to a different number of probes 20 and be electrically connected to the corresponding probes 20. As shown in Figure 2, one signal processing unit 30 is electrically connected to one corresponding probe 20, and the other signal processing unit 30 is electrically connected to four probes 20. In the figure, the functional layer 10 is a transparent layer, the actual functional layer 10 is an opaque layer, and the signal processing unit 30 and the probes 20 are located on the upper and lower surfaces of the functional layer 10, respectively.

[0045] The signal processing unit generates a probe control signal according to the control parameters input by the user and transmits the probe control signal to the corresponding probe; specifically, each signal processing unit 30 located on the same surface of the functional layer 10 is electrically connected to a probe control system to which the user inputs the control parameters, and transmits the control parameters input by the user to each signal processing unit 30. Upon receiving the control parameters, the signal processing unit 30 generates a probe control signal for each corresponding probe 20 and transmits each probe control signal to each corresponding probe 20, thereby controlling each electrically connected probe 20 to perform a corresponding process on the operated surface of the wafer.

[0046] The probe 20 performs operation processing on the operated surface according to the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit. For each probe 20, the probe 20 sets the operation parameters of the probe 20, such as operation mode, operation range, etc., in the probe control signal received by the probe 20 and transmitted from the corresponding signal processing unit 30, and the probe 20 performs operation processing on the operated surface according to the probe control signal to obtain a probe data signal and transmit it to the signal processing unit 30, and the signal processing unit 30 digitizes, decodes and processes the received probe data signal to obtain data of each pixel of the operated surface, and transmits the data of each pixel to the probe control system, so that the probe control system can generate a complete image of the operated surface of the current wafer. Here, the probe data signal of the probe 20 includes, but is not limited to, a probe longitudinal force signal, a spatial probe position signal, a probe velocity data, a probe vibration frequency data, a probe temperature data, a probe coding or address data, etc.

[0047] In this embodiment, the functional layer 10 may be a support sheet that has been subjected to micro- or nano-processing and has a certain degree of mechanical strength, and the functional layer 10 may be any of a silicon wafer, a glass wafer, a quartz wafer, a wafer, and a printed circuit board.

[0048] In this embodiment and the subsequent embodiments, the number of probes and the arrangement method are only shown roughly, and the number of probes and the arrangement method may be set according to the processing requirements of the operated surface. For example, multiple probes may be arranged in a row or in an array, multiple probes may be arranged on a two-dimensional plane, or a non-coplanar three-dimensional structure may be formed.

[0049] This embodiment provides a probe device comprising a functional layer, a plurality of probes, and at least one signal processing unit, wherein a plurality of probes are provided on one side of the functional layer, and at least one signal processing unit is provided on the other side of the functional layer, each signal processing unit corresponds to at least one probe, and each probe corresponds to and is electrically connected to one signal processing unit, and the signal processing unit generates a probe control signal according to the control parameters input by the user, and transmits the probe control signal to the corresponding probe, and the probe performs operation processing on the operated surface according to the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit, thereby forming a three-dimensional probe device including the signal processing unit and the probe, reducing the wiring between the signal processing unit and the probe, and integrating the plurality of probes and the signal processing unit on different sides of the same functional layer, thereby reducing the impact of heat dissipated from the signal processing unit on the probe, and reducing accuracy loss.

[0050] 3, in one example, the probe 20 includes a needle head 201, a cantilever 202, and a needle tip 203, and in each probe 20, the needle tip 203 is disposed at the tip of the needle head 201, and the needle head 201 is fixed to one end of the cantilever 202, and the end of the cantilever 202 remote from the needle head 201 includes a control input end 204 and a signal output end 205, and the signal processing unit 30 includes a control output end 301 and a signal input end 302, and the control input end 204 of the cantilever 202 is connected to the control output end 301 of the corresponding signal processing unit 30, and the signal output end 205 of the cantilever 202 is connected to the signal input end 302 of the corresponding signal processing unit 30. In addition, the signal processing unit 30 further includes a signal sending end 303 and a signal receiving end 304 respectively connected to the probe control system. In addition, the signal processing unit 30 is provided with an operation information receiving end connected to a probe control system, and the probe control system transmits operation parameters of an operation table where the probe device is located to the signal processing unit 30 through the operation information receiving end, and the signal processing unit 30 determines information such as the position, angle, and speed of the wafer based on the operation parameters, and generates a probe control signal for each probe 20 so as to perform corresponding processing on the operated surface of the wafer by combining the control parameters input by the user to control the probe 20. In addition, in FIG. 3, the connection method between the signal processing unit 30 and one corresponding probe 20 is only shown in outline. Also, referring to FIG. 4, when the signal processing unit 30 corresponds to multiple probes 20, the signal processing unit 30 and the multiple probes 20 are connected by a bus, that is, the control output end 301 of the signal processing unit 30 is connected to one bus, and the control input ends 204 of the multiple probes 20 are respectively connected to the bus, and the signal input end 302 of the signal processing unit 30 is connected to another bus, and the signal output ends 205 of the multiple probes 20 are respectively connected to the bus.

[0051] The probe 20 controls the tip 203 in accordance with a probe control signal received from a control input terminal 204 to perform operation processing on the operated surface, and transmits the obtained probe data signal to a signal input terminal 301 of the connected signal processing unit.

[0052] Specifically, taking any signal processing unit 30 as an example, the signal processing unit 30 receives control parameters from the probe control system through the signal receiving end 304, generates probe control signals for each corresponding probe 20 according to the control parameters, and transmits each probe control signal to the corresponding probe 20 through the control output end 301 to control each electrically connected probe 20 to perform corresponding processing on the wafer operated surface; after receiving the corresponding probe control signal through the control input end 204, the probe 20 controls the tip 203 according to the probe control signal to perform operation processing on the operated surface, and performs operation processing on the operated surface according to the working parameters of the probe 20 set in the probe control signal to obtain a probe data signal, and transmits the probe data signal to the corresponding signal processing unit 30 through the signal output end 205; the signal processing unit 30 may directly transmit the received probe data signal to the probe control system through the signal transmitting end 303, or may pre-process the probe data signal and then transmit the processed probe data signal to the probe control system.

[0053] In one embodiment, referring to Figures 5 and 6, a plurality of through holes 101 are provided in the functional layer 10, an insulating layer is provided on the inner wall of the through holes 101, a conductive material (e.g., copper, silver, or other conductive material) is provided in the through holes 101, each signal processing unit 30 corresponds to at least one through hole 101 (the figure shows an example in which each signal processing unit 30 corresponds to one through hole 101), each through hole 101 corresponds to one signal processing unit 30, the signal processing unit 30 is electrically connected to a target probe via the conductive material in the corresponding through hole, and the target probe is a probe 20 corresponding to the signal processing unit 30. Specifically, a plurality of through holes 101 are provided in the functional layer 10, the number of the through holes 101 is equal to or greater than the number of the signal processing units 30, each signal processing unit 30 corresponds to only one signal processing unit 30, each through hole 101 is filled with a conductive material, and a conductive channel electrically connecting both sides of the functional layer 10 is formed in the through hole 101. For example, the signal processing unit 30 corresponds to one through hole 101, and the control output terminal 301 and the signal input terminal 302 of the signal processing unit 30 are , they may be electrically connected to the conductive channel of the through hole 101 via wiring on the surface of the functional layer 10 on which they are located, or may be directly soldered to the conductive channel of the through hole 101, and each probe 20 corresponding to the signal processing unit 30 may be electrically connected to the conductive channel of the through hole 101 via wiring on the surface of the functional layer 10 on which it is located, thereby realizing an electrical connection between the signal processing unit 30 and each corresponding probe 20, and a conductive channel is formed by filling the through hole 101 with a conductive material to facilitate the connection.

[0054] In another embodiment, a plurality of through holes 101 are provided on the functional layer 10, an insulating layer is provided on the inner wall of the through holes 101, each signal processing unit 30 corresponds to at least one through hole 101, each through hole 101 corresponds to one signal processing unit 30, and the signal processing unit 30 is electrically connected to a target probe, which is a probe 20 corresponding to the signal processing unit 30, by a lead wire passing through the corresponding through hole 101. Specifically, the functional layer 10 is provided with a plurality of through holes 101, the number of the through holes 101 is greater than the number of the signal processing units 30, and each signal processing unit 30 may correspond to one or more through holes 101, and each through hole 101 corresponds to only one signal processing unit 30, and for each signal processing unit 30, the signal processing unit 30 corresponds to one through hole 101. For example, two connection points are formed on the surface of the functional layer 10 where the control output terminal 301 and the signal input terminal 302 of the signal processing unit 30 are located, and then two conductive lead wires are used to connect to the two connection points, and then the conductive lead wires pass through the through holes 101 and are connected to the control input terminal 204 and the signal output terminal 205 of the probe 20 located on the other surface of the functional layer 10, thereby realizing electrical connection between the signal processing unit 30 and each corresponding probe 20. Here, in this embodiment, reference may be made to Figures 5 and 6, and the main difference is that the through holes 101 in Figure 6 are not filled with a conductive material.

[0055] In one embodiment, each probe has a corresponding address, and the addresses corresponding to any two probes are different. Referring to FIG. 7, a plurality of probes 20 are arranged on the probe layer 11, and the address of each probe 20 is represented by its position coordinates. For example, the addresses of the nine probes 20 in the first row are (X1, Y4), (X1, Y5), (X1, Y6), (X1, Y7), (X1, Y8), (X1, Y9), (X1, Y10), (X1, Y11), and (X1, Y12) from bottom to top, where the values ​​of X and Y in the address of each probe 20 may be one byte or multiple bytes, so that each probe 20 can be individually identified. Note that FIG. 7 only shows a schematic diagram of how the probes 20 are arranged on the probe layer 11.

[0056] A second embodiment of the present invention relates to a probe device for performing manipulation processing of a manipulated wafer surface, including measurement of physical and chemical quantities of the manipulated wafer surface, scanning probe lithography (SPL), electron generation, photon generation, and ion injection into the manipulated surface by ion introduction using a probe. Here, the physical and chemical quantities include, but are not limited to, electrical information, mechanical information, magnetic information, optical information, acoustic information, material components, and the like, for example, three-dimensional shape measurement, surface roughness measurement, surface conductivity measurement, surface material component measurement, surface temperature measurement, surface hardness measurement, surface elasticity measurement, surface emitted light measurement, surface luminescence measurement, surface Raman signal measurement, and the like. In scanning probe lithography, when a voltage (e.g., 50V) is applied to the probe and an electric field of high electric field strength is formed at the tip of the probe, electrons at the tip of the needle are easily extracted, and an electric field emission is formed at the tip of the probe. The electrons emitted from the electric field formed at the tip of the probe are used to expose a photoresist to light to form electron beam lithography, and the electrons emitted from the probe can generate secondary electrons on the surface to be operated.

[0057] 8 to 11, the probe device includes a plurality of non-contact fixed functional layers, a plurality of probes 20, and a plurality of signal processing units 30. Here, the signal processing unit 30 may have the functions of data processing and data storage. Here, the fixing method between two adjacent functional layers is, for example, by drilling a hole in one functional layer and providing a screw seat of a preset height in the other functional layer, so that the screw is fastened to the screw seat through the hole in the functional layer, thereby realizing the fixing between the two functional layers, and leaving a gap of a preset height between the two functional layers for attaching the signal processing unit 30.

[0058] The multiple functional layers include one probe layer 11 and M data processing layers 12 stacked in order from bottom to top, and the multiple probes 20 are installed on the surface of the probe layer 11 away from the data processing layer 12, i.e., the multiple probe 20 pins are installed on the lower surface of the probe layer 11, and the multiple signal processing units 30 are installed on each data processing layer 12, where M is an integer of 1 or more. Here, the functional layer in the probe device may be a support sheet that employs micro-nano processing and has a certain mechanical strength, and the functional layer may be any of a silicon wafer, a glass piece, a quartz piece, or a printed circuit board. In addition, in each data processing layer 12, the signal processing unit 30 may be provided on the upper or lower surface of the data processing layer 12, or may be provided on both the upper and lower surfaces of the data processing layer 12, and in this embodiment and the following embodiments, the signal processing unit 30 may be provided on the upper surface of the data processing layer 12.

[0059] Each signal processing unit 30 in the first data processing layer 12 corresponds to at least one probe 20, and each probe 20 corresponds to and is electrically connected to one signal processing unit 30 located in the first data processing layer 12. That is, in the probe device, each signal processing 30 in the data processing layer 12 (first data processing layer 12) adjacent to the probe layer 11 corresponds to at least one probe 20 in the probe layer 11, and each probe 20 in the probe layer 11 corresponds to only one signal processing unit 30 in the first data processing layer 12, and each probe 20 is electrically connected to the corresponding signal processing unit 30.

[0060] A signal processing unit 30 in the Nth data processing layer 12 among the M data processing layers 12 corresponds to at least one signal processing unit 30 in the N-1th data processing layer 12, and a signal processing unit 30 in the Nth data processing layer 12 corresponds to and is electrically connected to one signal processing unit 30 in the N+1th data processing layer 12, where 1≦N≦M and N is an integer.

[0061] As can be seen from the above, the multiple signal processing units 30 in the probe device are respectively arranged on M data processing layers 12, and when M=1, as shown in Figures 8 and 9, the probe device forms a two-layer structure including one data processing layer 12 on which the multiple signal processing units 30 are arranged, and one probe layer 11 on which the multiple probes 20 are arranged.

[0062] When M>1, as shown in Figures 10 and 11, the probe device forms a multi-layer structure including, from bottom to top, one probe layer 11 and M data processing layers 12, in which the probe layer 11 is provided with a plurality of probes 20, and the data processing layers 12 are each provided with a plurality of signal processing units 30.

[0063] Here, the number of signal processing units 30 arranged in each data processing layer 12 is equal to or greater than the number of signal processing units 30 arranged in the adjacent next data processing layer 12, forming a multi-stage signal processing structure in which the number of signal processing units 30 increases sequentially from top to bottom. Taking the Nth data processing layer 12 other than the first data processing layer 12 among the M data processing layers 12 as an example, each signal processing unit 30 in the Nth data processing layer 12 corresponds to one or more signal processing units 30 in the N-1th data processing layer 12, and each signal processing unit 30 in the Nth data processing layer 12 corresponds to only one signal processing unit 30 in the N+1th data processing layer 12, and each signal processing unit 30 in the Nth data processing layer 12 is electrically connected to the signal processing unit 30 in the corresponding N+1th data processing layer 12, and at the same time, each signal processing unit 30 in the Nth data processing layer 12 is electrically connected to each signal processing unit 30 in the corresponding N-1th data processing layer 12.

[0064] The probe device receives control parameters input by a user through the signal processing unit 30 in at least one data processing layer 12, and generates a probe control signal for each probe. Specifically, among the M data processing layers 12 stacked from bottom to top, each signal processing unit 30 in any one or more data processing layers 12 is connected to a probe control system that inputs the control parameters and transmits the input control parameters to the signal processing unit 30 in the connected data processing layer 12, and each signal processing unit 30 generates a probe control signal for each corresponding probe 20 upon receiving the control parameters.

[0065] The probe device transmits each probe control signal to the corresponding probe 20 by the signal processing unit 30 in the first data processing layer 12. Specifically, in the probe device, a correspondence between each signal processing unit 30 and the probe 20 is preset, so that each signal processing unit 30 can receive and process only the probe control signal of the corresponding probe 20.

[0066] Taking the case where the probe control signals are generated only in the Mth data processing layer 12 as an example, in the Mth data processing layer 12, each signal processing unit 30 generates a probe control signal for the corresponding probe 20, and then transmits the generated probe control signal to the corresponding signal processing unit 30 in the next data processing layer 12, and each signal processing unit 30 in the second data processing layer 12 receives the probe control signal for the corresponding probe 20, and then transmits each probe control signal to the corresponding signal processing unit 30 in the next data processing layer 12, and this process proceeds sequentially until each probe control signal is transmitted to the corresponding signal processing unit 30 in the first data processing layer 12, and the signal processing unit 30 in the first data processing layer 12 transmits each probe control signal to the corresponding probe 20 so as to control each electrically connected probe 20 to perform corresponding processing on the wafer operated surface.

[0067] The probe 20 performs operation processing on the operated surface according to the received probe control signal, and transmits the obtained probe data signal to the corresponding signal processing unit. Specifically, for each probe 20, each probe 20 receives the probe control signal transmitted from the corresponding signal processing unit 30, and sets operation parameters such as operation mode and operation range in the probe control signal. The probe 20 performs operation processing on the operated surface according to the probe control signal to obtain a probe data signal, and transmits the probe data signal to the corresponding signal processing unit 30 in the first data processing layer 12. The signal processing units 30 in the M data processing layers 12 may perform operations such as digitization, decoding, processing, etc. on the probe data signal to obtain data of each pixel of the wafer operated surface, and transmit the data of each pixel to the probe control system, so that the probe control system may generate a complete image of the wafer operated surface. Here, the probe data signal of the probe 20 includes, but is not limited to, a probe longitudinal force signal, a probe spatial position signal, a probe velocity data, a probe vibration frequency data, a probe temperature data, a probe coding or address data, etc.

[0068] In this embodiment, a three-dimensional probe device including a signal processing unit and a probe is presented, and the wiring between the signal processing unit and the probe is reduced. When the number of probes is large, the connection lines required to connect the probe device to the outside can be reduced, and the data processing layer for providing the signal processing unit can be provided in multiple stages, so that the connection between the probe device and the external probe control system can be easily performed. At the same time, the probe and the signal processing unit are integrated into different functional layers, so that the influence of the heat radiated from the signal processing unit on the probe can be reduced, and the accuracy loss can be reduced.

[0069] In one example, M≧2, when the signal processing unit of the first data processing layer 12 receives the probe data signal transmitted from the corresponding probe 20, it transmits each probe data signal to the signal processing unit 30 of the Mth data processing layer 12, and the signal processing unit 30 of the Mth data processing layer 12 receives the probe data signal of each probe 20, and processes each probe data signal to obtain the data processing result of the operated surface. That is, the probe device is provided with a plurality of data processing layers 12, and the signal processing unit 30 of the lowest data processing layer 12 receives the probe data signal transmitted from the corresponding probe 20, and transmits the probe data signal of the probe 20 to the signal processing unit 30 of the Mth data processing layer 12 through the signal processing unit 30 of the data processing layer 12 between the Mth data processing layer 12, and the signal processing unit 30 of the Mth data processing layer 12 processes the probe data signal of each corresponding probe 20, including digitization, decoding and other operations, and then transmits each pixel data of the wafer processed surface obtained to the probe control system, and the probe control system generates a complete image of the wafer processed surface this time.

[0070] Here, the probe data signal of each probe 20 is stored in a corresponding signal processing unit 30 in the first data processing layer 12 or in a corresponding signal processing unit 30 in the Mth data processing layer 12 .

[0071] That is, the original probe data signals collected by each probe 20 in the probe layer 11 are stored in the corresponding signal processing unit 30 in the adjacent data processing layer 12, and when the probe data signals are processed by the signal processing unit 30 in the topmost data processing layer 12 (the Mth data processing layer 12), only the topmost data processing layer 12 (the Mth data processing layer 12) needs to be connected to the probe control system by a connection line, and the probe data signal processing with a large amount of calculation is arranged in the topmost data processing layer 12, and there is at least one data processing layer 12 between the topmost data processing layer 12 and the probe layer 11, so that the influence of heat generation of the signal processing unit 30 on the probe 20 in the probe layer 11 can be further reduced. Alternatively, the original probe data signals collected by each probe 20 in the probe layer 11 are stored in the signal processing unit 30 in the topmost data processing layer 12 (the Mth data processing layer 12), which makes it easier to install a memory in the topmost data processing layer 12, and reduces the difficulty of arranging the memory.

[0072] In one example, M≧2, when the signal processing unit 30 in the first data processing layer 12 among the M data processing layers 12 receives a probe data signal transmitted from a corresponding probe 20, it processes the probe data signal of the corresponding probe 20 to obtain a data processing result of the corresponding probe, and transmits the data processing result of each probe 20 to the signal processing unit 30 in the Mth data processing layer 12, and when the signal processing unit 30 in the Mth data processing layer 12 receives the data processing result of each probe 20, it obtains a data processing result of the operated surface based on the data processing result of each probe 20. That is, when the first data processing layer 12 among the M data processing layers 12 receives the original probe data signals collected by the corresponding probes 20, it processes the received probe data signals of each probe 20 to obtain data processing results for each probe 20, and transmits only the data processing results of each corresponding probe 20 to the signal processing unit 30 in the topmost data processing layer 12 (the Mth data processing layer 12), and the signal processing unit 30 in the topmost data processing layer 12 (the Mth data processing layer 12) transmits the data processing results of each probe 20 to the probe control system, so that the topmost data processing layer 12 only needs to store the data processing results of the processed probes 20, thereby reducing the data storage requirements for the signal processing unit 30 in the topmost data processing layer 12.

[0073] In one example, a heat dissipation layer is provided between two adjacent functional layers, that is, the heat dissipation layer is made of a material with a high heat dissipation rate in order to reduce the heat exchange between the functional layers, and the heat dissipation layer may be a semiconductor cooling layer, and the semiconductor cooling layer can actively perform heat dissipation by cooling after turning on the power, so that the influence of the heat dissipated from the signal processing unit on the probe can be further reduced, and the temperature of the probe device can be further reduced, and the semiconductor cooling layer does not require a refrigerant, and there is no vibration or noise during operation, and there is no influence on the probe. Here, a heat dissipation layer is provided between at least the first data processing layer 12 of the M data processing layers 12 and the probe layer 11, that is, a heat dissipation layer is provided between the probe layer 11 and the adjacent data processing layer 12, and it is also possible that a heat dissipation layer is provided between the adjacent data processing layers 12 or not. As shown in FIG. 12, FIG. 12 is a schematic diagram in which a heat dissipation layer 40 is provided only between the probe layer 11 and the adjacent data processing layer 12.

[0074] In one example, referring to FIG. 3 , the probe 20 comprises a needle head 201, a cantilever 202, and a needle tip 203, and in each probe 20, the needle tip 203 is disposed at the tip of the needle head 201, the needle head 201 is fixed to one end of the cantilever 202, and the end of the cantilever 202 away from the needle head 201 comprises a control input end 204 and a signal output end 205.

[0075] The signal processing unit 30 has a control output end 301, a signal input end 302, a signal transmitting end 303 and a signal receiving end 304, and the control input end 204 of the cantilever 202 of the probe 20 is connected to the control output end 301 of the corresponding signal processing unit 30 in the first data processing layer 12 (i.e., the data processing layer 12 adjacent to the probe layer 11), and the signal output end 205 of the cantilever 202 of the probe 20 is connected to the signal input end 302 of the corresponding signal processing unit 30 in the first data processing layer 12.

[0076] In the Nth data processing layer 12 among the M data processing layers 12, the signal transmitting end 303 of the signal processing unit 30 is connected to the signal input end 302 of the corresponding signal processing unit 30 in the N+1th data processing layer 12, and the signal receiving end 304 of the signal processing unit 30 is connected to the control output end 301 of the corresponding signal processing unit 30 in the N+1th data processing layer 12.

[0077] The probe 20 controls the tip 203 in accordance with a probe control signal received from a control input terminal 204 to perform operation processing on the operated surface, and transmits the obtained probe data signal to a signal input terminal 302 of the connected signal processing unit 30.

[0078] The signal processing unit 30 transmits the received probe data signal to a corresponding signal processing unit 30 in a target functional layer, which is the data processing layer 12 one level above the data processing layer 12 in which the signal processing unit is located.

[0079] Specifically, in the probe apparatus, the signal transmitting end 303 and the signal receiving end 304 of each signal processing unit 30 located on the Mth data processing layer 12 are respectively connected to the probe control system, the signal processing unit 30 receives control parameters from the probe control system via the signal receiving end 304, and generates a probe control signal for each corresponding probe 20 based on the control parameters, and the signal processing unit 30 is also provided with an operation information receiving end connected to the probe control system, and the probe control system transmits operation parameters of the operation table where the probe apparatus is located to the signal processing unit 30 via the operation information receiving end, so that the signal processing unit 30 identifies information such as the position, angle, speed, etc. of the wafer based on the operation parameters, and generates a probe control signal for each probe 20 by combining the control parameters input by the user.

[0080] After each signal processing unit 30 in the data processing layer 12 generates a probe control signal for each probe 20, the probe control signal is sent to the corresponding probe 20 via the signal processing unit 30 in the data processing layer 12 of the Mth stage. After receiving the corresponding probe control signal via the control input terminal 204, the probe 20 controls the tip 203 according to the probe control signal to perform operation processing on the operated surface, and performs operation processing on the operated surface according to the operation parameters of the probe 20 set in the probe control signal to obtain a probe data signal, and sends the probe data signal to the corresponding signal processing unit 30 in the adjacent data processing layer 12. The signal processing unit 30 in the adjacent data processing layer 12 performs operations such as digitization, decoding, processing, etc. on the probe data signal to obtain data of each pixel of the wafer operated surface, and sends the data of each pixel to the probe control system, and the probe control system generates a complete image of the operated surface of the wafer this time.

[0081] In addition, when one signal processing unit 30 in the Nth data processing layer 12 corresponds to multiple signal processing units 30 in the N-1th data processing layer 12, the one signal processing unit 30 in the Nth data processing layer 12 may be connected to the corresponding multiple signal processing units 30 in the N-1th data processing layer 12 via a bus, see Fig. 13. Similarly, when one signal processing unit 30 in the first data processing layer 12 corresponds to multiple probes 20 in the probe layer 11, the one signal processing unit 30 in the first data processing layer 12 may be connected to the multiple probes 20 in the probe layer 11 via a bus, see Fig. 4 for details and will not be described here.

[0082] In one example, a plurality of positioning marks are provided on the probe layer, and a plurality of positioning holes are provided on each data processing layer, the positioning holes correspond one-to-one to the positioning marks, and the positions of the positioning holes in each data processing layer correspond to the positions of the corresponding positioning marks in the probe layer in vertical space, so that the positioning holes and the positioning marks can be optically aligned during operation of the probe device, and alignment between each data processing layer and the probe layer can be realized, thereby maintaining stable electrical connections between adjacent data processing layers and stable electrical connections between the data processing layers and the probe layers.

[0083] 14, M=1, that is, the probe device forms a two-layer structure consisting of one data processing layer 12 and one probe layer 11, in which the probe layer 11 is provided with three positioning marks 111, and the data processing layer 12 is provided with three positioning holes 121, the positioning holes 121 correspond one-to-one to the positioning marks 111, and the positions of the positioning marks 111 corresponding to each positioning hole 121 correspond to the vertical space, and the size of the positioning holes 121 in the data processing layer 12 is 1:100 mm, the size of the positioning marks 111 in the probe layer 11 is 1:100 mm, and the size of the positioning holes 121 in the data processing layer 12 is 1:100 mm. By making the size of the positioning holes 121 larger than that of the positioning marks 111 in the probe layer 11, each positioning hole 121 can be aligned vertically with the corresponding positioning mark 111. Referring to the positioning plan view in FIG. 14, vertical spatial alignment between the probe layer 11 and the data processing layer 12 can be realized, thereby enabling each data processing unit 30 in the data processing layer 12 to be aligned vertically with the corresponding probe 20 in the probe layer 11 and electrically connected. Here, the positioning marks 111 may be, for example, a cross marker (which is exemplified in FIG. 14), a triangular marker, etc.

[0084] Referring to FIG. 15 , M>1, that is, the probe device forms a multi-layer structure including one probe layer 11 and M data processing layers 12 stacked in order from bottom to top, in which the probe layer 11 is provided with three positioning marks 111, each data processing layer 12 is provided with three positioning holes 121, the positioning holes 121 in each data processing layer 12 correspond one-to-one to the positioning marks 111 of the probe layer 11, and in each data processing layer 12, the positions of the positioning marks 111 corresponding to each positioning hole 121 correspond to the vertical space. The size of the positioning holes 121 of the first data processing layer 12 is larger than the size of the positioning marks 111 of the probe layer 11. In the M data processing layers 12, the diameters of the positioning holes 121 increase from bottom to top, so that the positioning holes 121 of the M data processing layers 12 and the corresponding positioning marks 111 of the probe layer 11 can be aligned in the vertical space. Refer to the alignment plan view of FIG. 15, that is, the M data processing layers 12 and the probe layer 11 are aligned in the vertical space, so that between two adjacent data processing layers 12, the upper data processing layer 12 has a larger diameter than the upper data processing layer 12. Each data processing unit 30 in the first data processing layer 12 can be aligned in vertical space and electrically connected to a corresponding data processing unit 30 in the underlying data processing layer 12, and between the first data processing layer 12 and the probe layer 11, each data processing unit 30 in the data processing layer 12 can be aligned in vertical space and electrically connected to a corresponding probe 20 in the probe layer 11, thereby achieving vertical spatial alignment and electrical connection between the functional layers, and here the positioning mark 111 may be, for example, a cross marker (which is given as an example in Figure 15), a triangular marker, etc.

[0085] In one example, a plurality of pairs of matching convex portions and concave portions are provided on opposing surfaces between two adjacent functional layers, and the positions of the matching convex portions and the positions of the concave portions of each pair correspond in vertical space, so that the two adjacent functional layers can be fixed after the matching convex portions and concave portions are attached to each other in correspondence with each other, without the need for additional fixing means for fixing the two functional layers, and a certain gap is provided between the two functional layers for attaching various components, where the two adjacent functional layers include a probe layer and a first data processing layer, and two adjacent data processing layers, i.e., a plurality of pairs of matching convex portions and concave portions are provided on opposing surfaces between the probe layer and the first data processing layer, and a plurality of pairs of matching convex portions and concave portions are provided on opposing surfaces between two adjacent data processing layers, and the plurality of convex portions and concave portions may be installed on surfaces that are positioned based on the stability of attachment between the functional layers. For example, the concave portion is a spherical concave portion, the convex portion is a spherical convex portion, the end of the spherical convex portion that contacts the spherical concave portion is a sphere that matches the shape and size of the spherical concave portion, and when attached to the spherical convex portion and the spherical concave portion, a portion of the spherical convex portion fits into the spherical concave portion. For example, if the concave portion is a conical concave portion, the shape of the convex portion is a conical protrusion that matches the conical concave portion.

[0086] The matching convex and concave portions of each pair are provided on opposing surfaces between two adjacent functional layers. Taking any two adjacent functional layers as an example, a convex portion may be provided on the upper surface of the lower functional layer and a concave portion may be provided on the lower surface of the upper functional layer, or a concave portion may be provided on the upper surface of the lower functional layer and a convex portion may be provided on the lower surface of the upper functional layer. Below, we will explain the case where a concave portion is provided on the upper surface of the lower functional layer and a convex portion is provided on the lower surface of the upper functional layer as an example.

[0087] Referring to Figure 16, two adjacent functional layers (components in the functional layers are not shown) are respectively referred to as the first functional layer 1001 and the second functional layer 1002, and three recesses 10021 are provided on the upper surface of the first functional layer 1001, and three convex portions 10011 are provided on the lower surface of the second functional layer 1002, and the three convex portions 10011 correspond one-to-one to the three recesses 10021, matching in shape and size, and the positions of the matching convex portions 10011 and concave portions 10021 in each pair correspond in vertical space, so that the first functional layer 1001 and the second functional layer 1002 can be positioned and fixed by combining and attaching the matching convex portions 10011 and concave portions 10021.

[0088] Referring to FIG. 17, M=1, that is, the probe device forms a two-layer structure including one data processing layer 12 and one probe layer 11, in this case, three recesses 10021 are provided on the upper surface of the probe layer 11, and three protrusions 10011 are provided on the lower surface of the data processing layer 12, the three protrusions 10011 correspond one-to-one to the three recesses 10021, and their shapes and sizes match, and the positions of the matching protrusions 10011 and the recesses 10021 of each pair correspond in the vertical space, and the positioning and fixing of the probe layer 11 and the data processing layer 12 can be realized by combining and attaching each of the matching protrusions 10011 and the recesses 10021 of each pair, thereby realizing that each data processing unit 30 on the data processing layer 12 is vertically aligned and electrically connected to the corresponding probe 20 on the probe layer 11.

[0089] 18, M>1, that is, the probe device forms a multi-layer structure including one probe layer 11 and M data processing layers 12 stacked in order from bottom to top, in this case, between the probe layer 11 and the first data processing layer 12, three recesses 10021 are provided on the upper surface of the probe layer 11, and three protrusions 10011 are provided on the lower surface of the data processing layer 12, the three protrusions 10011 correspond one-to-one to the three recesses 10021, and their shapes and sizes match, and the positions of the matching protrusions 10011 and the recesses 10021 of each pair correspond in vertical space, and the matching protrusions 10011 and the recesses 10021 of each pair are respectively combined and attached to realize the positioning and fixing of the probe layer 11 and the first data processing layer 12, thereby realizing that each data processing unit 30 in the first data processing layer 12 is vertically aligned and electrically connected to the corresponding probe 20 of the probe layer 11.

[0090] Between two adjacent data processing layers 12, three recesses 10021 are provided on the upper surface of the lower data processing layer 12, and three convex portions 10011 are provided on the lower surface of the upper data processing layer 12, the three convex portions 10011 correspond one-to-one to the three recesses 10021 and their shapes and sizes match, the positions of the matching convex portions 10011 and the positions of the recesses 10021 of each pair correspond in vertical space, and by combining and attaching each pair of matching convex portions 10011 and recesses 10021, positioning and fixing between the two adjacent data processing layers 12 can be realized, so that each data processing unit 30 in the upper data processing layer 12 can be vertically aligned and electrically connected to the corresponding data processing unit 30 in the lower data processing layer 12.

[0091] In addition, Figure 18 shows an example of alignment in vertical space between the convex portion 10011 and the concave portion 10021 in all functional layers (including the lobe layer 11 and the data processing layer 12). However, this is not limited to this, and the positions in vertical space of each pair of matching convex portion 10011 and concave portion 10021 may be set after ensuring alignment in vertical space between each pair of matching convex portion 10011 and concave portion 10021.

[0092] In one embodiment, a plurality of through holes are provided in each data processing layer, an insulating layer is provided on the inner wall of the through hole, a conductive substance is provided in the through hole, each signal processing unit in each data processing layer corresponds to at least one through hole, each through hole corresponds to one signal processing unit, when 1≤N<M, for each signal processing unit in the Nth data processing layer among the M data processing layers, the signal processing unit is electrically connected to the target signal processing unit in the (N + 1)th data processing layer through the conductive substance in the corresponding through hole, and the target signal processing unit is the signal processing unit corresponding to the signal processing unit in the (N + 1)th data processing layer; when N = M, for each signal processing unit in the Nth data processing layer among the M data processing layers, the signal processing unit is electrically connected to the target probe in the probe layer through the conductive substance in the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.That is, in this embodiment, an electrical connection method between two adjacent functional layers is provided. Referring to FIG. 19 , between two adjacent data processing layers 12, a plurality of through holes 101 are provided in the data processing layer 12 located in the upper layer, an insulating layer is provided on the inner wall of the through holes 101, a conductive material (e.g., copper, silver, or other conductive material) is provided in the through holes 101, each signal processing unit 30 corresponds to at least one through hole 101, each through hole 101 corresponds to one signal processing unit 30, each signal processing unit 30 in the upper data processing layer 12 corresponds to at least one signal processing unit 30 in the lower data processing layer 12, and each signal processing unit 30 in the lower data processing layer 12 is connected to only one signal processing unit 30 in the upper data processing layer 12. Correspondingly, each through hole 101 is filled with a conductive material, which corresponds to the formation of a conductive channel in the through hole 101, and the conductive channel forms an electrical connection between both sides of the data processing layer 12, and two conductive contacts are formed on both sides of the data processing layer 12. Taking one signal processing unit 30 in the upper data processing layer 12 as an example, the signal processing unit 30 may be electrically connected via wiring or directly welded to the conductive contact on the upper surface, and the corresponding signal processing unit 30 in the lower data processing layer 12 may be welded to the conductive welding point formed on the lower surface of the corresponding through hole 101 in the upper data processing layer 12 through a conductive lead, thereby realizing the electrical connection between the corresponding signal processing units 30 in the two data processing layers 12. The manner of electrical connection between the signal processing unit 30 and the corresponding probe 20 between the data processing layer 12 and the probe layer 11 is the same as above, and will not be described here.

[0093] In another embodiment, a plurality of through holes are provided in the functional layer, an insulating layer is provided on the inner wall of the through holes, each signal processing unit in each data processing layer corresponds to at least one through hole, each through hole corresponds to one signal processing unit, when 1 ≤ N < M, for each signal processing unit in the Nth data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target signal processing unit in the (N + 1)th data processing layer through a lead wire passing through the corresponding through hole, the target signal processing unit is a signal processing unit corresponding to the signal processing unit in the (N + 1)th data processing layer, when N = 1, for each signal processing unit in the Nth data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target probe in the probe layer through a lead wire passing through the corresponding through hole, and the target probe is a probe corresponding to the signal processing unit. That is, in this embodiment, an electrical connection method between two adjacent functional layers is provided. Between two adjacent data processing layers 12, a plurality of through holes 101 are provided in the upper data processing layer 12, an insulating layer is provided on the inner wall of the through holes 101, each signal processing unit 30 corresponds to at least one through hole 101, each through hole 101 corresponds to one signal processing unit 30, each signal processing unit 30 in the upper data processing layer 12 corresponds to at least one signal processing unit 30 in the lower data processing layer 12, each signal processing unit 30 in the lower data processing layer 12 corresponds to only one signal processing unit 30 in the upper data processing layer 12. Taking one signal processing unit 30 in the upper data processing layer 12 as an example, the signal processing unit 30 enables electrical connection between the corresponding signal processing units 30 in the two data processing layers 12 by a conductive lead wire directly connected to the corresponding signal processing unit 30 in the lower data processing layer 12 passing through the corresponding through hole 101. The electrical connection mode between the signal processing unit 30 and the corresponding probe 20 between the probe layer 11 and the data processing layer 12 is the same as above and is omitted here.

[0094] In one embodiment, each probe has a corresponding address, and the corresponding addresses of any two probes are different. Referring to FIG. 7, a plurality of probes 20 are arranged on the probe layer 11, and the address of each probe 20 is represented by its position coordinates. For example, the addresses of the nine probes 20 in the first row are (X1, Y4), (X1, Y5), (X1, Y6), (X1, Y7), (X1, Y8), (X1, Y9), (X1, Y10), (X1, Y11), and (X1, Y12) from bottom to top, where the X and Y values ​​of the address of each probe 20 may be one byte or multiple bytes, so that each probe 20 can be identified. Note that FIG. 7 only shows a schematic diagram of how the probes 20 are arranged on the probe layer 11.

[0095] A third embodiment of the present application relates to a probe control device comprising the probe apparatus of the first or second embodiment and a probe control system connected to the probe apparatus, the probe control system being, for example, a computer main unit, a laptop computer, etc.

[0096] Although preferred embodiments of the present invention have been described in detail above, it should be understood that aspects of the embodiments can be modified, if necessary, to provide additional embodiments using aspects, features, and concepts of various patents, applications, and publications.

[0097] These and other changes can be made to the embodiments in light of the above detailed description.

[0098] Generally, in the claims, the terms used should not be considered as being limited to the specific embodiments disclosed in the description and claims, but should be understood to include all possible embodiments along with any equivalent scope to which these claims are entitled.

Claims

1. A functional layer, a plurality of probes, and at least one signal processing unit; the plurality of probes are provided on one surface of the functional layer, the at least one signal processing unit is provided on the other surface of the functional layer, each of the signal processing units corresponds to at least one of the probes, and each of the probes corresponds to and is electrically connected to one of the signal processing units; The signal processing unit generates a probe control signal according to a control parameter input by a user, and transmits the probe control signal to the corresponding probe; The probe performs operation processing on an operated surface in response to the received probe control signal, and transmits an obtained probe data signal to the corresponding signal processing unit.

2. 2. The probe device according to claim 1, characterized in that a plurality of through holes are provided in the functional layer, an insulating layer is provided on the inner walls of the through holes, a conductive material is provided in the through holes, each of the signal processing units corresponds to at least one of the through holes, each of the through holes corresponds to one of the signal processing units, the signal processing units are electrically connected to a target probe via the conductive material in the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

3. 2. The probe device according to claim 1, characterized in that a plurality of through holes are provided in the functional layer, an insulating layer is provided on the inner walls of the through holes, each of the signal processing units corresponds to at least one of the through holes, each of the through holes corresponds to one of the signal processing units, the signal processing units are electrically connected to a target probe via a lead wire passing through the corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

4. The probes each include a needle head, a cantilever, and a needle tip. In each of the probes, the needle tip is disposed at the tip of the needle head, the needle head is fixed to one end of the cantilever, one end of the cantilever remote from the needle head includes a control input end and a signal output end, the signal processing unit includes a control output end and a signal input end, the control input end of the cantilever is connected to the control output end of the corresponding signal processing unit, and the signal output end of the cantilever is connected to the signal input end of the corresponding signal processing unit, The probe device according to claim 1, characterized in that the probe controls the tip in accordance with the probe control signal received from the control input end to perform operation processing on the operated surface, and transmits an obtained probe data signal to the signal input end of the connected signal processing unit.

5. 5. The probe device according to claim 1, wherein the functional layer is any one of a silicon wafer, a piece of glass, a piece of quartz, a wafer, and a printed circuit board.

6. 2. The probe apparatus according to claim 1, wherein each of the probes has a corresponding address, and the corresponding addresses of any two of the probes are different.

7. a plurality of functional layers, a plurality of probes, and a plurality of signal processing units, which are fixed in a non-contact manner, the plurality of functional layers including one probe layer and M data processing layers, which are stacked in order from bottom to top, the plurality of probes being provided on a surface of the probe layer away from the data processing layer, the plurality of signal processing units being provided on each of the data processing layers, and M being an integer of 1 or more; Each of the signal processing units in the first data processing layer corresponds to at least one of the probes, and each of the probes corresponds to and is electrically connected to one of the signal processing units located on the first data processing layer; The signal processing unit in the N-th data processing layer among the M data processing layers corresponds to at least one of the signal processing units in the N-1-th data processing layer, and the signal processing unit in the N-th data processing layer corresponds to and is electrically connected to one of the signal processing units in the N+1-th data processing layer, where 1≦N≦M, and N is an integer; The probe device receives the control parameters input by the signal processing unit in at least one of the data processing layers and generates a probe control signal for each of the probes; The probe device transmits each of the probe control signals to the corresponding probes by the signal processing unit in the first data processing layer; The probe performs operation processing on an operated surface in response to the received probe control signal, and transmits an obtained probe data signal to the corresponding signal processing unit.

8. M≧2, and the signal processing unit in the first data processing layer sends each of the probe data signals to the signal processing unit in the Mth data processing layer when the signal processing unit in the first data processing layer receives a probe data signal sent by the corresponding probe; The probe device according to claim 7, characterized in that the signal processing unit in the M-th data processing layer receives the probe data signals of each of the probes, and then processes each of the probe data signals to obtain a data processing result of the operated surface.

9. M≧2, and the signal processing unit in the first data processing layer among the M data processing layers receives a probe data signal transmitted by a corresponding probe, processes the probe data signal of the corresponding probe to obtain a data processing result of the corresponding probe, and transmits the data processing result of each probe to the signal processing unit in the Mth data processing layer; The probe device according to claim 7, characterized in that, when the signal processing unit in the Mth data processing layer receives the data processing results of each of the probes, it obtains a data processing result of the operated surface based on the data processing results of each of the probes.

10. The probe apparatus according to claim 8, characterized in that the probe data signal of each of the probes is stored in a corresponding one of the signal processing units in the first data processing layer, or in a corresponding one of the signal processing units in the Mth data processing layer.

11. 8. The probe device according to claim 7, further comprising a heat dissipation layer provided between two adjacent functional layers.

12. 12. The probe apparatus according to claim 11, wherein the heat dissipation layer is a semiconductor cooling layer.

13. Each of the data processing layers is provided with a plurality of through holes, an insulating layer is provided on an inner wall of the through holes, and a conductive material is provided in the through holes; in each of the data processing layers, each of the signal processing units corresponds to at least one of the through holes, and each of the through holes corresponds to one of the signal processing units; when 1≦N<M, for each of the signal processing units in the N-th data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target signal processing unit in the N+1-th data processing layer by a conductive material in a corresponding through hole, the target signal processing unit being a signal processing unit corresponding to the signal processing unit in the N+1-th data processing layer; 8. The probe device of claim 7, wherein, when N=1, for each signal processing unit in a first data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target probe in the probe layer by a conductive material in a corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

14. A plurality of through holes are provided in the functional layer, and an insulating layer is provided on an inner wall of the through hole, and in each of the data processing layers, each of the signal processing units corresponds to at least one of the through holes, and each of the through holes corresponds to one of the signal processing units; when 1≦N<M, for each of the signal processing units in the N-th data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target signal processing unit in the N+1-th data processing layer by a lead wire passing through a corresponding through hole, the target signal processing unit being a signal processing unit corresponding to the signal processing unit in the N+1-th data processing layer; 8. The probe device according to claim 7, characterized in that, when N=1, for each signal processing unit in a first data processing layer among the M data processing layers, the signal processing unit is electrically connected to a target probe in the probe layer by a lead wire passing through a corresponding through hole, and the target probe is the probe corresponding to the signal processing unit.

15. The probe device according to claim 7, characterized in that a plurality of positioning marks are provided on the probe layer, a plurality of the positioning holes are provided on each of the data processing layers, the positioning holes correspond one-to-one to the positioning marks, and the positions of the positioning holes in each of the data processing layers and the corresponding positioning marks in the probe layer correspond in vertical space.

16. The probe device according to claim 7, characterized in that a plurality of pairs of matching convex portions and concave portions are provided on opposing surfaces between two adjacent functional layers, and the positions of the matching convex portions and concave portions of each pair correspond in vertical space.

17. The probes include a needle head, a cantilever, and a needle tip, and in each of the probes, the needle tip is disposed at the tip portion of the needle head, the needle head is fixed to one end of the cantilever, and one end of the cantilever remote from the needle head includes a control input end and a signal output end, each of the signal processing units includes a signal receiving end, a signal transmitting end, a control output end, and a signal input end, the control input end of the cantilever is connected to the control output end of the corresponding signal processing unit in the first data processing layer, and the signal output end of the cantilever is connected to the signal input end of the corresponding signal processing unit in the first data processing layer, In the N-th data processing layer among the M data processing layers, a signal transmitting end of the signal processing unit is connected to a signal input end of the corresponding signal processing unit in the N+1-th data processing layer, and a signal receiving end of the signal processing unit is connected to a control output end of the corresponding signal processing unit in the N+1-th data processing layer; The probe controls the tip according to the probe control signal received from the control input end to perform an operation process on the operated surface, and transmits the obtained probe data signal to the signal input end of the connected signal processing unit; The probe apparatus according to claim 7, characterized in that the signal processing unit transmits the received probe data signal to a corresponding signal processing unit in a target functional layer, the target functional layer being the data processing layer one level above the data processing layer in which the signal processing unit is located.

18. 18. The probe device according to claim 7, wherein the functional layer is any one of a silicon wafer, a piece of glass, a piece of quartz, a wafer, and a printed circuit board.

19. 8. The probe apparatus according to claim 7, wherein each of the probes has a corresponding address, and the corresponding addresses of any two of the probes are different.

20. 20. A probe control device comprising: a probe apparatus according to claim 1; and a probe control system connected to the probe apparatus.

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