Light detection device, and method for manufacturing the same

Abstract

To provide a light detection device which facilitates the patterning of organic layers and is improved in quality, and a method for manufacturing the light detection device.SOLUTION: A light detection device 1 includes: lower structure 100 which is located in a detection region and a frame region surrounding the detection region; a plurality of pixel electrodes 210 which are installed on the lower structure 100 in the detection region and arranged in an array; an organic photoelectric conversion layer 220 which is provided on the a plurality of pixel electrodes 210 and formed continuously over the detection region and a part of the frame region; an upper electrode 230 which is positioned above the organic photoelectric conversion layer 220; and a transparent conductive protective layer 190 which is installed on the lower structure 100 in at least a part of the frame region, and at least a part of which is located beneath the peripheral part of the organic photoelectric conversion layer 220 formed within the frame region.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a light detection device and a method for manufacturing a light detection device. [Background technology]

[0002] 2. Description of the Related Art In recent years, a detection device in which organic photoelectric conversion elements (OPDs) are arranged on a substrate has become known. Such a detection device is used as a biosensor for detecting biometric information such as fingerprints and veins.

[0003] In a detection device using an OPD, a thin film transistor, an OPD layer, and the like are formed on a substrate. The OPD layer is formed by disposing an organic layer having a plurality of layers including an organic light receiving layer between an upper electrode and a lower electrode. Here, for example, as disclosed in Patent Document 1, an organic layer may be commonly provided on a plurality of lower electrodes. In this case, it is considered that the organic layer is provided over the entire substrate, and then patterned so that the organic layer remains only on the plurality of lower electrodes. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-68793 Summary of the Invention [Problem to be solved by the invention]

[0005] However, when patterning the organic layer, if the etching conditions are too weak, residues are generated, which can lead to moisture intrusion. On the other hand, if the etching conditions are too strong to prevent residues from being generated, the underlying structure is damaged, which can lead to electrical conduction problems.

[0006] The present invention has been made in view of the above problems, and one of its objects is to provide a photodetector that facilitates patterning of an organic layer and has improved quality, and a method for manufacturing the same. [Means for solving the problem]

[0007] (1) The photodetection device of the present invention includes a lower structure provided in a detection region and a frame region surrounding the detection region, a plurality of pixel electrodes arranged in an array on the lower structure in the detection region, an organic photoelectric conversion layer provided on the plurality of pixel electrodes and continuously formed in the detection region and a portion of the frame region, an upper electrode provided on the organic photoelectric conversion layer, and a transparent conductive protective layer provided on the lower structure in at least a portion of the frame region, at least a portion of which is disposed under a portion of a peripheral portion of the organic photoelectric conversion layer that is formed within the frame region.

[0008] (2) In the photodetector described in (1) above, the transparent conductive protective layer may be arranged to surround the detection region, and the entire peripheral portion of the organic photoelectric conversion layer may be disposed within the frame region.

[0009] (3) The photodetector according to (1) or (2) above may further include a sealing structure including a first inorganic layer provided above the upper electrode in the detection region and the frame region, a resin layer provided on the first inorganic layer, and a second inorganic layer provided on the resin layer, and in a planar view, the transparent conductive protective layer may be disposed inside the second inorganic layer.

[0010] (4) In the photodetector device described in any one of (1) to (3) above, a common wiring connection portion electrically connected to a common wiring is provided on a surface of the lower structure in the frame region, a portion of the transparent conductive protective layer covers at least a portion of the common wiring connection portion, and a portion of the transparent conductive protective layer covering the common wiring connection portion may be electrically connected to the upper electrode.

[0011] (5) In the photodetector according to any one of (1) to (4) above, the pixel electrodes and the transparent conductive protection layer may be made of the same material.

[0012] (6) In the photodetector described in any one of (1) to (5) above, the transparent conductive protective layer may be made of an indium-based oxide.

[0013] (7) In the photodetector device described in any one of (1) to (6) above, the transparent conductive protective layer may be made of indium tin oxide (ITO).

[0014] (8) A method for manufacturing a photodetector according to the present invention includes the steps of: forming a lower structure in a detection region and a frame region surrounding the detection region; forming a plurality of pixel electrodes in an array on the lower structure in the detection region; forming a transparent conductive protective layer on the lower structure in at least a portion of the frame region so as to be adjacent to the detection region; continuously forming an organic photoelectric conversion layer in the detection region and the frame region; etching the organic photoelectric conversion layer using a mask covering the detection region and a portion of the region in the frame region where the transparent conductive protective layer is formed; and forming an upper electrode on the etched organic photoelectric conversion layer. [Brief description of the drawings]

[0015] [Figure 1] 2 is a block diagram showing an outline of a substrate configuration of the photodetector according to the present embodiment. FIG. [Diagram 2] 1 is a block diagram showing an outline of a circuit configuration of a photodetector according to an embodiment of the present invention. [Diagram 3] FIG. 1 is a plan view of a light detection device according to an embodiment of the present invention. [Figure 4] 4 is a cross-sectional view of the photodetector corresponding to the line IV-IV in FIG. 3. [Diagram 5] 4 is a cross-sectional view of the photodetector corresponding to the VV section line in FIG. 3. [Figure 6A] 5A to 5C are cross-sectional views showing a method for manufacturing the photodetector according to the embodiment. [Figure 6B] FIG. 6B is a cross-sectional view showing a step following FIG. 6A. [Figure 6C] FIG. 6C is a cross-sectional view showing a step following FIG. 6B. [Figure 6D] FIG. 6D is a cross-sectional view showing a step following FIG. 6C. [Figure 7] FIG. 11 is a plan view of a modified example of the light detection device according to the embodiment. [Figure 8] 8 is a cross-sectional view of the photodetector corresponding to the line VIII-VIII in FIG. 7. [Figure 9] 9 is a cross-sectional view of the photodetector corresponding to the line IX-IX in FIG. 7. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and the present invention should not be interpreted as being limited to the description of the embodiments exemplified below.

[0017] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those explained in the previous drawings may be given the same reference numerals, and duplicate explanations may be omitted.

[0018] Furthermore, in the embodiments, when specifying the positional relationship between a certain component and another component, "above" and "below" do not only mean being located directly above or directly below a certain component, but also include cases where there is another component interposed between them, unless otherwise specified.

[0019] Fig. 1 is a block diagram showing an outline of the substrate configuration of the photodetector according to the present embodiment. As shown in Fig. 1, the photodetector 1 includes a substrate 110, a sensor unit 10, a gate line driving circuit 20, a signal line selection circuit 21, a detection circuit 24, a control circuit 26, and a power supply circuit 28.

[0020] A control board 600 is electrically connected to the board 110 via a flexible printed circuit board 500. The flexible printed circuit board 500 is provided with a detection circuit 24. The control board 600 is provided with a control circuit 26 and a power supply circuit 28. The control circuit 26 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 26 supplies control signals to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21 to control the detection operation of the sensor unit 10. The power supply circuit 28 supplies a power supply voltage to the sensor unit 10, the gate line driving circuit 20, and the signal line selection circuit 21.

[0021] The light detection device 1 has a detection area DA and a frame area PA. The detection area DA is an area in which the sensor unit 10 is provided. The frame area PA is an area outside the detection area DA, and is an area in which the sensor unit 10 is not provided. In other words, the frame area PA is an area between an end of the detection area DA and an end of the substrate 110. The substrate 110 has a terminal portion 450 in an area on the lower side of the frame area PA. The substrate 110 and the flexible printed circuit board 500 are electrically connected via the terminal portion 450.

[0022] The sensor unit 10 includes a plurality of pixels PX and receives light from a detection object. The plurality of pixels PX are arranged in a matrix in the detection area DA. The plurality of pixels PX include a light detection sensor that is a photodiode, and output an electric signal according to the light irradiated thereto. Each pixel PX outputs an electric signal according to the light irradiated thereto as a detection signal Vdet to the signal line selection circuit 21. The light detection device 1 may detect information about a living body, such as a blood vessel image of a finger or a palm, a pulse wave, a pulse, and blood oxygen saturation, based on the detection signal Vdet from each pixel PX. In addition, each pixel PX performs detection according to a gate drive signal Vgcl supplied from a gate line drive circuit 20.

[0023] The gate line driving circuit 20 and the signal line selection circuit 21 are provided in the frame region PA. Specifically, as shown in Fig. 1, the gate line driving circuit 20 is provided in a region of the frame region PA extending in the extension direction of the signal lines SGL. The signal line selection circuit 21 is provided in a region of the frame region PA extending in the extension direction of the gate lines GCL, and is provided in a region on the lower side of the substrate 110.

[0024] Fig. 2 is a block diagram showing an outline of the circuit configuration of the photodetector according to this embodiment. As shown in Fig. 2, the photodetector 1 has an output control unit 30 and a detection unit 40. A part or all of the functions of the detection control unit 30 are included in a control circuit 26. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 24 are included in the control circuit 26.

[0025] The detection control unit 30 is a circuit that supplies control signals to the gate line driving circuit 20, the signal line selection circuit 21, and the detection unit 40, respectively, and controls their operations. The detection control unit 30 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST, to the gate line driving circuit 20. The detection control unit 30 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 21. The gate line driving circuit 20 is a circuit that drives the gate lines GCL based on the various control signals. The gate line driving circuit 20 sequentially or simultaneously selects a plurality of gate lines GCL, and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 20 selects the pixels PX connected to the gate lines GCL. The signal line selection circuit 21 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL. The signal line selection circuit 21 is, for example, a multiplexer. The signal line selection circuit 21 connects the selected signal line SGL to the detection circuit 24 based on the selection signal ASW supplied from the detection control unit 30. As a result, the signal line selection circuit 21 outputs the detection signal Vdet of the pixel PX to the detection unit 40.

[0026] The detection unit 40 includes a detection circuit 24, a signal processing unit 44, a storage unit 45, a coordinate extraction unit 46, and a detection timing control unit 47. Based on a control signal supplied from the detection control unit 30, the detection timing control unit 47 controls the detection circuit 24, the signal processing unit 44, and the coordinate extraction unit 46 to operate in synchronization with each other.

[0027] The detection circuit 24 is, for example, an analog front-end circuit (AFE). The detection circuit 24 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal. The signal processor 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 24. When a detection target such as a finger or palm comes into contact with or close to the detection surface, the signal processor 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 24. In addition, the signal processor 44 can detect information about a living body such as a blood vessel image, pulse wave, pulse, and blood oxygen saturation of the finger or palm based on the signal from the detection circuit 24. The memory unit 45 temporarily stores the signal calculated by the signal processor 44. The memory unit 45 may be, for example, a RAM (Random Access Memory), a register circuit, or the like. The coordinate extraction unit 46 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger, palm, etc. when the contact or proximity of the finger, palm, etc. is detected by the signal processing unit 44. The coordinate extraction unit 46 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger, palm, etc. The coordinate extraction unit 46 combines the detection signals Vdet output from each pixel PX of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger, palm, etc. Note that the coordinate extraction unit 46 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0028] Next, the substrate 110 will be described in detail with reference to Figs. 3 and 4. Fig. 3 is a plan view of the substrate 110 of the light detection device 1, showing the periphery of the main films. Fig. 4 is a cross-sectional view corresponding to the IV-IV cutting line in Fig. 3. Fig. 4 shows the vicinity of the edge of the detection region DA and the entire frame region PA. Also, in Fig. 4, hatching of some layers has been omitted to make the cross-sectional structure easier to see (the same applies to Figs. 5, 6, 8, and 9 described below).

[0029] In Fig. 3, the two-dot chain line indicates the boundary between the detection area DA and the frame area PA. The area inside the two-dot chain line is the detection area DA, and the area outside the two-dot chain line is the frame area PA. The substrate 110 has a terminal section 450 that connects the flexible printed circuit board 500 and the substrate 110, and a common wiring connection section 400 for supplying a voltage to the upper electrode 230 described later, in the frame area PA. The substrate 110 has the same layer structure on the left side, upper side, and right side, so a cross-sectional view corresponding to the IV-IV cutting line in Fig. 3 will be described as an example.

[0030] As shown in FIG. 4, the photodetector 1 has a lower structure 100 including a thin film transistor TFT, an OPD layer 200 provided on the lower structure 100, and a sealing structure 300 provided on the OPD layer 200.

[0031] The lower structure 100 has a substrate 110 and a barrier inorganic layer 120 provided on the substrate 110. The substrate 110 may have a two-layer structure, for example, a glass substrate and a resin substrate provided thereon. The resin substrate may be made of, for example, polyimide. However, the present invention is not limited to this, and the substrate 110 may not have a glass substrate and may be made of only a flexible resin substrate. The barrier inorganic layer 120 may have a laminated structure made of multiple layers. The lower structure 100 may have an additional layer 125 in accordance with the location where the thin film transistor TFT is to be formed.

[0032] The thin film transistor TFT has a semiconductor layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134. A gate insulating layer 140 is provided between the semiconductor layer 131 and the gate electrode 132. A silicon oxide layer is preferably used as the gate insulating layer 140. An interlayer insulating layer 150 is formed on the gate electrode 132. The interlayer insulating layer 150 is preferably structured such that a silicon nitride layer and a silicon oxide layer are stacked.

[0033] A planarization layer 160 is formed on the interlayer insulating layer 150. The planarization layer 160 may be made of a resin such as photosensitive acrylic having an excellent surface planarity. The planarization layer 160 may be removed in a portion that electrically connects the OPD layer 200 and the lower structure 100. Furthermore, inside the planarization layer 160, a lead-out wiring 162 may be disposed.

[0034] As shown in FIG. 4, the planarization layer 160 includes a central planarization portion 160a, an inner bank portion 160b, and an outer bank portion 160c. The planarization layer 160 is partially removed in the frame region PA to form the inner bank portion 160b and the outer bank portion 160c. The inner bank portion 160b and the outer bank portion 160c form a double bank structure in a plan view. The inner bank portion 160b and the outer bank portion 160c are formed to block the resin material constituting the sealing structure 300 and prevent it from leaking out beyond the frame region PA. The central planarization portion 160a is continuously formed in the detection region DA and the portion of the frame region PA adjacent to the detection region DA, that is, the inner peripheral portion. "Continuously" means continuing without interruption, and the central planarization portion 160a is continuously formed without interruption from the detection region DA to the inner peripheral portion of the frame region PA.

[0035] An insulating layer 170 may be provided on the planarization layer 160. Furthermore, an inorganic insulating layer 180 made of an inorganic material may be provided on the insulating layer 170 in the detection area DA. Such an inorganic insulating layer 180 may be called a rib, a partition wall, a bank, or the like. The inorganic insulating layer 180 is an inorganic insulating layer formed of, for example, silicon nitride. The inorganic insulating layer 180 may also be provided on the pixel electrode 210 so as to expose the pixel electrode 210 included in the OPD layer 200. In a cross-sectional view, the inorganic insulating layer 180 is located inside an end of an organic photoelectric conversion layer 220 described later.

[0036] The transparent conductive protective layer 190 is formed on the insulating layer 170 in the frame region PA. The transparent conductive protective layer 190 includes a first transparent conductive protective layer 190a, a second transparent conductive protective layer 190b, and a third transparent conductive protective layer 190c. The first transparent conductive protective layer 190a is formed so as to cover the peripheral edge of the central flattened portion 160a. The first transparent conductive protective layer 190a also covers the inner peripheral edge of the frame region PA over the entire periphery (see FIG. 3). The second transparent conductive protective layer 190b is formed so as to cover the inner bank portion 160b. The third transparent conductive protective layer 190c is formed so as to cover the outer bank portion 160c. By forming the transparent conductive protective layer 190 in this manner, the lead-out wiring 162 formed inside the flattened layer 160 can be protected. The transparent conductive protective layer 190 may be formed of an indium-based oxide. Among the indium-based oxides, it may be formed of indium tin oxide (ITO).

[0037] 1 is formed. The OPD layer 200 is composed of a pixel electrode 210 provided on the insulating layer 170, an organic photoelectric conversion layer 220 that covers the pixel electrodes 210 and reaches the frame region PA, and an upper electrode 230 provided on the organic photoelectric conversion layer 220.

[0038] The pixel electrodes 210 are provided corresponding to each pixel PX, and are electrically connected to the drain electrodes 134 of the lower structure 100. The organic photoelectric conversion layer 220 is a layer that functions as a photoelectric conversion layer. The organic photoelectric conversion layer 220 is continuously formed in the detection area DA and the inner periphery of the frame area PA. The organic photoelectric conversion layer 220 is also formed on the first transparent conductive protective layer 190a in the inner periphery of the frame area PA. The upper electrode 230 is a common electrode provided across each pixel PX.

[0039] The sealing structure 300 has a first inorganic layer 310 provided on the upper electrode 230, a resin layer 320 which is a resin layer provided on the first inorganic layer 310, and a second inorganic layer 330 provided on the resin layer 320. The resin layer 320 is preferably made of a material with high transmittance and low moisture permeability.

[0040] Ends of the first inorganic layer 310, the resin layer 320, and the second inorganic layer 330 are located in the frame region PA. In particular, the end of the second inorganic layer 330 is located near the edge of the substrate 110 (see FIG. 3). The second inorganic layer 330 is in contact with the first inorganic layer 310 in the frame region PA. In this way, in the sealing structure 300, the multiple layers made of inorganic materials prevent moisture from entering the organic photoelectric conversion layer 220 from the outside.

[0041] Next, a description will be given with reference to Fig. 5, which is a cross-sectional view of the photodetector corresponding to the VV section line in Fig. 3. Layers having similar functions to those described with reference to Fig. 4 are given the same reference numerals, and detailed description thereof will be omitted. Below, a description will be mainly given of configurations that differ from the configuration described with reference to Fig. 4.

[0042] The common wiring connection part 400 is provided on the interlayer insulating layer 150 in the frame area PA, and is connected to the common wiring 410. The common wiring 410 supplies a common voltage to the upper electrode 230 via the common wiring connection part 400. Therefore, it is necessary that the common wiring connection part 400 and the upper electrode 230 are electrically connected. The wiring 420 is provided on the gate insulating layer 140.

[0043] Unlike FIG. 4, the third transparent conductive protective layer 190c is formed continuously to cover not only the outer bank portion 160c but also the common wiring connection portion 400. The upper electrode 230 is formed continuously from the detection area DA to the common wiring connection portion 400 in the frame area PA (see FIG. 3). Since the third transparent conductive protective layer 190c has conductivity, even if it exists between the common wiring connection portion 400 and the upper electrode 230, it can electrically connect the upper electrode 230 and the common wiring connection portion 400. With this configuration, even if the common wiring connection portion 400 and the upper electrode 230 are not in direct contact with each other, a common voltage can be supplied to the upper electrode 230. Note that the upper electrode 230 is electrically connected to the common wiring connection portion 400 as long as it is in contact with the third transparent conductive protective layer 190c located at the outermost periphery, so it does not have to be formed on the common wiring connection portion 400.

[0044] Returning to FIG. 3, the main layers when the substrate 110 is viewed in plan will be described. In FIG. 3, the area with the dot pattern represents the transparent conductive protective layer 190. The transparent conductive protective layer 190 is formed so that three films in a rectangular frame shape surround the detection area DA, and from the inside, they are the first transparent conductive protective layer 190a, the second transparent conductive protective layer 190b, and the third transparent conductive protective layer 190c. The transparent conductive protective layer 190 is disposed inside the second inorganic layer 330. It is preferable that all of the transparent conductive protective layer 190 is disposed inside the second inorganic layer 330. The inner periphery of the first transparent conductive protective layer 190a and the inner periphery of the frame area PA are aligned, and the first transparent conductive protective layer 190a is formed so as to surround the detection area DA.

[0045] The common wiring connection part 400 is located in the lower side area of ​​the substrate 110. The third transparent conductive protective layer 190c is a film formed in a rectangular frame-shaped area. The width of the film varies on each of the four sides. In particular, the width of the lower side is wider than the other three sides because the lower side is formed to cover the common wiring connection part 400.

[0046] The organic photoelectric conversion layer 220 is formed within a rectangular region indicated by a dashed line, and covers the inner periphery of the detection region DA and the frame region PA. The peripheral portion of the organic photoelectric conversion layer 220 is disposed inside the first transparent conductive protective layer 190a in a plan view. The upper electrode 230 is formed within a region indicated by a dashed dotted line, and covers the inner periphery of the detection region DA and the frame region PA. The peripheral portion of the upper electrode 230 is located further outside the peripheral portion of the organic photoelectric conversion layer 220, and the upper electrode 230 completely covers the organic photoelectric conversion layer 220. In addition, the peripheral portion of the upper electrode 230 is disposed inside the first transparent conductive protective layer 190a in a plan view.

[0047] The second inorganic layer 330 is formed within the region indicated by the solid line. In plan view, the transparent conductive protection layer 190, the organic photoelectric conversion layer 220, and the upper electrode 230 are disposed inside the second inorganic layer 330.

[0048] Next, a method for manufacturing the substrate 110 of this embodiment will be described in detail with reference to the drawings. Figures 6A to 6D are diagrams showing the method for manufacturing the substrate 110 of the embodiment of the present invention. Cross-sectional views corresponding to the VV cutting line in Figure 3 are taken as examples.

[0049] 6A, the lower structure 100, the common wiring connection portion 400, the common wiring 410, and the wiring 420 are formed on the substrate 110. The lower structure 100 is formed by repeating a general photolithography process multiple times, and since various techniques are well known, detailed explanations thereof will be omitted in this specification.

[0050] Next, a plurality of pixel electrodes 210 are formed on the lower structure 100. Then, a transparent conductive protective layer 190 is formed on the lower structure 100 in the frame region PA. The planarization layer 160 and the common wiring connection portion 400 are covered with the transparent conductive protective layer. Furthermore, when the plurality of pixel electrodes 210 and the transparent conductive protective layer 190 are made of the same material, they may be formed simultaneously on the lower structure 100. This can reduce the number of manufacturing steps. Next, an inorganic insulating layer 180 is formed to serve as a separating wall between the plurality of pixel electrodes 210. This formation may also be performed by a general lithography method.

[0051] Next, as shown in FIG. 6B, the organic photoelectric conversion layer 220 is continuously formed in the detection area DA and the frame area PA. It may be formed by deposition, or it may be formed by coating on a solvent dispersion or coating with a slit coater. By this process, the organic photoelectric conversion layer 220 is formed on the transparent conductive protection layer 190 on the planarization layer 160 and the common wiring connection part 400.

[0052] Next, as shown in Fig. 6C, a mask 700 is formed to cover a part of the detection area DA and the area in which the transparent conductive protective layer is formed in the frame area PA. In the cross-sectional view, the end of the mask 700 is arranged in the area where the central flattened portion 160a of the inner peripheral edge of the frame area PA and the first transparent conductive protective layer 190a overlap. The mask 700 may also be formed by a general lithography method.

[0053] 6D, the organic photoelectric conversion layer 220 is etched using a mask 700. This process allows the organic photoelectric conversion layer 220 to be continuously formed on the inner periphery of the detection area DA and the frame area PA.

[0054] As described above, in this embodiment, by forming the transparent conductive protective layer 190 in the frame region PA before forming the organic photoelectric conversion layer 220, even if the etching conditions are strengthened, it is possible to protect the planarization layer 160 and the common wiring connection portion 400. Note that the organic photoelectric conversion layer 220 is in contact with the first transparent conductive protective layer 190a, which is easily permeable to moisture, but is not in contact with the second transparent conductive protective layer 190b and the third transparent conductive protective layer 190c, and is located inside the second inorganic layer 330, so that intrusion of moisture can be suppressed.

[0055] Further, with reference to Figs. 7 to 9, a substrate 110 according to another modified example of this embodiment will be described. Fig. 7 is a plan view of the substrate 110 of a modified example of the photodetector 1, showing the periphery of the main film. Fig. 8 is a cross-sectional view of the photodetector corresponding to the VIII-VIII section line in Fig. 7. Fig. 9 is a cross-sectional view of the photodetector corresponding to the IX-IX section line in Fig. 7. Figs. 8 and 9 show a portion corresponding to the cross-sectional views shown in Figs. 4 and 5. Note that layers having the same functions as those described with reference to Figs. 5 and 6 are designated by the same reference numerals, and detailed description thereof will be omitted. Below, a description will be mainly given of configurations different from those described with reference to Figs. 5 and 6.

[0056] The transparent conductive protective layer 190 is formed continuously from the inner periphery of the frame region PA to the outer bank portion 160c, as shown in Fig. 8. That is, the central flattened portion 160a, the inner bank portion 160b, and the outer bank portion 160c are covered by one transparent conductive protective layer 190. Also, the transparent conductive protective layer 190 is formed continuously from the inner periphery of the frame region PA to the common wiring connection portion 400, as shown in Fig. 9. That is, the central flattened portion 160a, the inner bank portion 160b, the outer bank portion 160c, and the common wiring connection portion 400 are covered by one transparent conductive protective layer 190.

[0057] 7, in the substrate 110 in the modified example, the transparent conductive protective layer 190 is formed in an area with a dot pattern. The transparent conductive protective layer 190 is formed in a rectangular frame-shaped area formed so as to surround the frame area PA. In addition, the peripheries of the organic photoelectric conversion layer 220 and the upper electrode 230 are disposed inside the transparent conductive protective layer 190 in a plan view.

[0058] According to the configuration of this modification, the area at the same potential as the upper electrode 230 and the common wiring connection portion 400 becomes larger, which has the effect of stabilizing the structure.

[0059] The present invention is not limited to the above-described embodiment, and various modifications are possible. For example, the configurations described in the embodiments can be replaced with substantially the same configurations, configurations that provide the same effects, or configurations that can achieve the same purpose. [Explanation of symbols]

[0060] 1 Photodetector, 10 Sensor, 20 Gate line driving circuit, 21 Signal line selection circuit, 24 Detection circuit, 26 Control circuit, 28 Power supply circuit, 30 Detection control unit, 40 Detection unit, 42 Detection signal amplifier, 43 A / D conversion unit, 44 Signal processing unit, 45 Memory unit, 46 Coordinate extraction unit, 47 Detection timing control unit, 100 Lower structure, 110 Substrate, 120 Barrier inorganic layer, 125 Additional layer, 131 Semiconductor layer, 132 Gate electrode, 133 Source electrode, 134 Drain electrode, 140 Gate insulating layer, 150 Interlayer insulating layer, 160 Planarization layer, 160a Central planarization portion, 160b Inner bank portion, 160c Outer bank portion, 162 Lead wiring, 170 Insulating layer, 180 Inorganic insulating layer, 190 Transparent conductive protective layer, 190a First transparent conductive protective layer, 190b second transparent conductive protective layer, 190c third transparent conductive protective layer, 200 OPD layer, 210 pixel electrode, 220 organic photoelectric conversion layer, 230 upper electrode, 300 sealing structure, 310 first inorganic layer, 320 resin layer, 330 second inorganic layer, 400 common wiring connection portion, 410 common wiring, 420 wiring, 450 terminal portion, 500 flexible printed circuit board, 600 control board, 700 mask, DA detection area, PA frame area, PX pixel.

Claims

1. a lower structure provided in a detection region and a frame region surrounding the detection region; a plurality of pixel electrodes arranged in an array on the lower structure in the detection region; an organic photoelectric conversion layer provided on the plurality of pixel electrodes and formed continuously in the detection region and a part of the frame region; an upper electrode provided on the organic photoelectric conversion layer; a transparent conductive protective layer provided on the lower structure in at least a part of the frame region, at least a part of which is disposed under a part of a periphery of the organic photoelectric conversion layer that is formed within the frame region; A light detection device comprising:

2. the transparent conductive protective layer is provided so as to surround the detection region, the entire peripheral portion of the organic photoelectric conversion layer is disposed within the frame region; 2. The optical detection device according to claim 1.

3. a sealing structure including a first inorganic layer provided above the upper electrode in the detection region and the frame region, a resin layer provided on the first inorganic layer, and a second inorganic layer provided on the resin layer, In a plan view, the transparent conductive protection layer is disposed on the inner side of the second inorganic layer.

2. The optical detection device according to claim 1.

4. a common wiring connection portion electrically connected to a common wiring is provided on a surface of the lower structure in the frame region; a portion of the transparent conductive protection layer covers at least a portion of the common wiring connection portion; a portion of the transparent conductive protection layer covering the common wiring connection portion is electrically connected to the upper electrode; 2. The optical detection device according to claim 1.

5. The materials of the pixel electrodes and the transparent conductive protection layer are the same; The optical detection device according to any one of claims 1 to 4.

6. The transparent conductive protective layer is made of an indium-based oxide. The optical detection device according to any one of claims 1 to 4.

7. The transparent conductive protective layer is made of indium tin oxide (ITO). The optical detection device according to any one of claims 1 to 4.

8. forming a substructure in a detection region and a frame region surrounding the detection region; forming an array of pixel electrodes on the substructure in the detection region; forming a transparent conductive protection layer on the understructure in at least a portion of the frame area and adjacent to the detection area; Etching the organic photoelectric conversion layer using a mask that covers the detection region and a part of the region in the frame region where the transparent conductive protection layer is formed; forming an upper electrode on the etched organic photoelectric conversion layer; A method for manufacturing a light detection device comprising the steps of:

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