Substrate processing method and substrate processing apparatus

Abstract

To provide a technique capable of restraining brush wear.SOLUTION: A substrate processing method includes a holding step S1 and a removing step S2. The holding step S1 holds a substrate having a main surface on which an uneven defect exists. The removing step S2 slides a first brush over a processing area including the uneven defect on the main surface of the substrate with avoiding a non-processing area including no uneven defect on the main surface of the substrate while a processing liquid is supplied to the main surface of the substrate, thereby removing at least a part of the uneven defect.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Conventionally, substrate processing apparatuses that perform physical cleaning on a substrate have been disclosed (for example, Patent Document 1). In Patent Document 1, the substrate processing apparatus includes a spin chuck, a cleaning liquid supply nozzle, and a cleaning brush. The spin chuck rotates the substrate while holding the substrate in a horizontal position. The cleaning liquid supply nozzle ejects cleaning liquid toward the main surface of the substrate. The cleaning brush is movably provided, and moves relative to the main surface of the substrate while in contact with the main surface of the substrate. This allows the cleaning brush to scrub and clean the main surface of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2003-059885 A Summary of the Invention [Problem to be solved by the invention]

[0004] If the cleaning brush moves from the center of the main surface of the substrate to the edge of the substrate, the entire main surface of the substrate can be cleaned. However, the object to be removed on the main surface of the substrate is not necessarily present on the entire main surface of the substrate, and may be present only in a partial area of ​​the main surface. In such a case, if the cleaning brush cleans the entire main surface of the substrate, unnecessary wear of the cleaning brush may occur.

[0005] Therefore, an object of the present disclosure is to provide a technique capable of suppressing brush wear. [Means for solving the problem]

[0006] A first aspect is a substrate processing method comprising a holding step of holding a substrate having a main surface on which unevenness defects are present, and a removal step of supplying a processing liquid to the main surface of the substrate while sliding a first brush against a processing area of ​​the main surface which contains the unevenness defects, while avoiding a non-processing area of ​​the main surface of the substrate which does not contain the unevenness defects, to remove at least a portion of the unevenness defects.

[0007] A second aspect is a substrate processing method according to the first aspect, wherein the unevenness defect includes an adhesion material that has adhered to the main surface due to contact between the substrate and a member that supports or holds the substrate before the holding step, and in the removing step, the first brush containing an abrasive polishes the processing area to remove at least a portion of the adhesion material.

[0008] A third aspect is a substrate processing method according to the second aspect, further comprising, after the removal step, a scrubbing step in which the processing liquid is supplied to the main surface of the substrate while a second brush not containing an abrasive is scrubbed against the processing area and the non-processing area of ​​the substrate to remove at least a portion of particles on the processing area and the non-processing area generated by the removal step.

[0009] A fourth aspect is a substrate processing method according to the second or third aspect, wherein the removal step includes a rough polishing step in which the processing liquid is supplied to the main surface of the substrate while the first brush, a first abrasive brush containing an abrasive, is slid against the processing area, avoiding the non-processing area, and after the rough polishing step, a fine polishing step in which the processing liquid is supplied to the main surface of the substrate while a second abrasive brush containing an abrasive finer than the abrasive of the first abrasive brush is slid against the processing area, avoiding the non-processing area.

[0010] A fifth aspect is a substrate processing method according to any one of the first to fourth aspects, further comprising, prior to the removal step, a setting step of setting the processing area based on positional relationship information relating to the position of the unevenness defect on the main surface of the substrate.

[0011] A sixth aspect is the substrate processing method according to the fifth aspect, wherein the position related information is received from an external source.

[0012] A seventh aspect is the substrate processing method according to the fifth aspect, wherein a sensor detects the unevenness defect and generates the position related information.

[0013] An eighth aspect is a substrate processing apparatus comprising a substrate holding unit for holding a substrate having a main surface on which uneven defects are present, an ejection unit including a nozzle for ejecting a processing liquid toward the main surface of the substrate held by the substrate holding unit, a first brush, a first brush movement drive unit for moving the first brush, and a control unit for controlling the substrate holding unit, the ejection unit, and the first brush movement drive unit to supply the processing liquid to the main surface of the substrate while avoiding non-processing areas of the main surface of the substrate that do not include the uneven defects and sliding the first brush against processing areas of the main surface that include the uneven defects, thereby removing at least a portion of the uneven defects.

[0014] A ninth aspect is a substrate processing apparatus according to the eighth aspect, further comprising a second brush and a second brush movement drive unit that moves the second brush, wherein the first brush is an abrasive brush containing an abrasive, and the second brush is a non-abrasive brush that does not contain an abrasive.

[0015] A tenth aspect is a substrate processing apparatus according to the ninth aspect, wherein the first brush is a first abrasive brush containing an abrasive, and the substrate processing apparatus further includes a second abrasive brush containing a finer abrasive than the abrasive of the first abrasive brush, and an abrasive brush movement drive unit that moves the second abrasive brush.

[0016] An eleventh aspect is the substrate processing apparatus according to any one of the eighth to tenth aspects, further comprising a sensor for detecting the unevenness defect on the main surface of the substrate. Effect of the Invention

[0017] According to the first and eighth aspects, the first brush is not brought into contact with the non-treatment area, so that wear of the first brush can be suppressed.

[0018] According to the second aspect, even if any deposits are attached to the main surface of the substrate, the deposits can be appropriately removed. Moreover, since the first brush does not polish the non-processing area, generation of particles can be suppressed.

[0019] According to the third aspect, in the scrubbing step, at least a part of the particles generated in the removing step is removed, so that the number of particles remaining on the main surface of the substrate can be further reduced.

[0020] According to the fourth aspect, in the rough polishing step, the first polishing brush containing a coarse abrasive polishes the processing area. Therefore, uneven defects can be effectively removed. Meanwhile, deeper scratches can be formed on the main surface of the substrate. At the contours of the deep scratches, the main surface of the substrate rises, so that convex portions can be formed at the contours.

[0021] In the fine polishing step, the second polishing brush containing fine abrasive polishes the processing area, thereby removing at least a portion of the protrusions generated in the rough polishing step, and making the main surface of the substrate flatter.

[0022] According to the fifth and sixth aspects, usability can be improved.

[0023] According to the seventh aspect, the positions of uneven defects on the main surface of the substrate can be obtained with high accuracy.

[0024] According to the ninth aspect, at least a part of the particles generated on the main surface of the substrate by polishing with the first brush can be removed by using the second brush.

[0025] According to the tenth aspect, at least a part of the unevenness defects on the main surface of the substrate can be effectively removed by polishing using the coarse first polishing brush. Meanwhile, deeper scratches are generated on the main surface of the substrate. At the contour of the deep scratch, the main surface of the substrate rises, so that a convex portion is formed on the contour. At least a part of this convex portion can be removed using the fine second polishing brush, so that the main surface of the substrate can be further flattened.

[0026] According to the eleventh aspect, the position of the unevenness defect can be acquired with high accuracy. [Brief description of the drawings]

[0027] [Figure 1] 1 is a vertical sectional view roughly illustrating an example of the configuration of a processing unit belonging to a substrate processing apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a plan view illustrating an example of the configuration of a processing unit according to the first embodiment. [Diagram 3] FIG. 2 is a cross-sectional view showing an example of a configuration of a portion of a substrate. [Figure 4] 4 is a plan view that illustrates a schematic example of a second main surface of the substrate. FIG. [Diagram 5] FIG. 2 is a diagram illustrating an example of a processing region and a non-processing region. [Figure 6] FIG. 2 is a block diagram illustrating an example of the configuration of a control unit. [Figure 7] 5 is a flowchart showing an example of the operation of the processing unit according to the first embodiment. [Figure 8] 10A and 10B are diagrams illustrating an example of a processing unit in a removal process. [Figure 9] FIG. 11 is a vertical cross-sectional view illustrating an example of the configuration of a processing unit according to a second embodiment. [Figure 10] FIG. 11 is a plan view illustrating an example of the configuration of a processing unit according to a second embodiment. [Figure 11] 10 is a flowchart showing an example of the operation of a processing unit according to a second embodiment. [Figure 12]FIG. 4 is a diagram illustrating an example of a time-dependent change in the state of a processing unit in a scrubber process. [Figure 13] FIG. 11 is a vertical cross-sectional view illustrating an example of the configuration of a processing unit according to a third embodiment. [Figure 14] 13 is a flowchart showing a specific example of a removal process according to the third embodiment. [Figure 15] FIG. 2 is a cross-sectional view showing an example of a configuration of a portion of a substrate. [Figure 16] 13 is a flowchart showing an example of an operation for setting a processing region. [Figure 17] FIG. 13 is a vertical cross-sectional view illustrating an example of the configuration of a processing unit according to a fifth embodiment. [Figure 18] 1 is a diagram illustrating an example of a configuration of a substrate processing system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Hereinafter, the embodiments will be described in detail with reference to the drawings. In the drawings, the dimensions and numbers of each part are exaggerated or simplified as necessary for the purpose of easy understanding. Parts having similar configurations and functions are given the same reference numerals, and duplicated explanations will be omitted in the following description.

[0029] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0030] Furthermore, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0031] When an expression indicating a relative or absolute positional relationship (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) is used, the expression not only strictly indicates the positional relationship, but also indicates a state in which the relative positional relationship is displaced with respect to angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) is used, the expression not only strictly indicates a quantitatively equal state, but also indicates a state in which a difference exists within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) is used, the expression not only strictly indicates the shape geometrically, but also indicates a shape having, for example, unevenness or chamfering within a range in which a similar effect is obtained, unless otherwise specified. When an expression "comprises," "has," "includes," "includes," or "has" a component is used, the expression is not an exclusive expression that excludes the presence of other components. When the phrase "at least one of A, B, and C" is used, the phrase includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0032] First Embodiment Fig. 1 is a vertical sectional view showing an example of the configuration of a processing unit 1 belonging to the substrate processing apparatus according to the first embodiment. Fig. 2 is a plan view showing an example of the configuration of a processing unit 1 according to the first embodiment. The substrate processing apparatus does not need to include only one processing unit 1, and may include, for example, a plurality of processing units 1 and a transport robot that transfers substrates W to and from each of the plurality of processing units 1.

[0033] The processing unit 1 is a single-wafer processing apparatus that processes the substrates W one by one. The substrates W are, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for organic electroluminescence (EL), substrates for flat panel displays (FPD), substrates for optical displays, substrates for magnetic disks, substrates for optical disks, substrates for magneto-optical disks, substrates for photomasks, and substrates for solar cells. The substrate W has a thin, flat plate shape with a first main surface Wa and a second main surface Wb. The second main surface Wb is the surface opposite to the first main surface Wa. In the following, the substrate W is assumed to be a semiconductor wafer. The substrate W has, for example, a disk shape. The diameter of the substrate W is, for example, about 300 mm, and the thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less.

[0034] A pattern during the manufacture of a semiconductor device may be formed on the first main surface Wa of the substrate W. In the example of FIG. 1, as described in detail later, the substrate W is held in a position in which the first main surface Wa faces vertically downward. Before being carried into the processing unit 1, the substrate W undergoes some processing of the manufacturing process for manufacturing a semiconductor device. That is, before being carried into the processing unit 1, the substrate W is transported to various pre-processing devices (not shown) by a transport robot (not shown). Each pre-processing device performs various processing on the first main surface Wa of the substrate W while supporting or holding the substrate W in a position in which the first main surface Wa of the substrate W faces vertically upward. For example, the pre-processing device forms various thin films (e.g., resist films) on the first main surface Wa of the substrate W.

[0035] On the other hand, such a process may cause various deposits to adhere to the second main surface Wb of the substrate W. FIG. 3 is a cross-sectional view showing an example of a configuration of a portion of the substrate W, and FIG. 4 is a plan view showing an example of the second main surface Wb of the substrate W. In the example of FIG. 3, deposits Ad are attached to the second main surface Wb of the substrate W. The deposits Ad may include foreign matter Ad1 and a film Ad2. The foreign matter Ad1 may include, for example, particles. The film Ad2 may also be formed on the second main surface Wb in the film formation process on the first main surface Wa of the substrate W. In the example of FIG. 3, the film Ad2 is formed on the second main surface Wb of the substrate W, covering at least a portion of the foreign matter Ad1. For this reason, the deposits Ad can also be said to be deposits adhered to the second main surface Wb of the substrate W. The deposits Ad are adhered to the second main surface Wb of the substrate W, so that the second main surface Wb of the substrate W has an uneven shape. The maximum value of the height of the protrusions caused by the deposits Ad on the second main surface Wb of the substrate W may be, for example, on the order of nm.

[0036] As shown in Fig. 4(a), the adhesions Ad may adhere to the peripheral edge of the substrate W. In the example of Fig. 4(a), the adhesions Ad are formed at three locations on the peripheral edge of the substrate W. These adhesions Ad may be caused, for example, by the three locations on the peripheral edge of the substrate W coming into contact with a support member in a pre-treatment device. For example, the pre-treatment device may be a batch-type device that processes a plurality of substrates W collectively, and the support member may be a member that supports the plurality of substrates W aligned vertically.

[0037] Alternatively, the deposits Ad may be formed at three equally spaced locations on a virtual circle VC on the second main surface Wb of the substrate W, as shown in Fig. 4(b). The virtual circle VC is concentric with the substrate W, and the diameter of the virtual circle VC is, for example, approximately half the diameter of the substrate W. These deposits Ad may be caused, for example, by the three locations on the virtual circle VC of the substrate W coming into contact with a support member in a pretreatment device. For example, the pretreatment device may be a single-wafer type device that processes substrates W one by one, and the support member may be three support pins that come into contact with the second main surface Wb of the substrate W.

[0038] Alternatively, the adhesions Ad may be dispersed and adhered over the entire surface of the second main surface Wb of the substrate W, as shown in Fig. 4(c). In the example of Fig. 4(c), the adhesions Ad are formed in a matrix. These adhesions Ad may be generated, for example, when a matrix of a plurality of points on the second main surface Wb of the substrate W comes into contact with a holding member in a pretreatment device. For example, the pretreatment device may be a single-wafer type device that processes the substrates W one by one, and the holding member may be a chuck member that electrostatically or suction-type adheres to the second main surface Wb of the substrate W.

[0039] As described above, the deposit Ad may be generated in the pretreatment device due to contact with a member that supports or holds the substrate W. If an uneven shape is formed on the second main surface Wb of the substrate W due to the deposit Ad, a defocus may occur in the exposure device. Specifically, in the exposure device, for example, the substrate W is held by a chuck member such as an electrostatic chuck or a suction chuck in a position in which the first main surface Wa faces vertically upward. That is, the chuck member abuts against the second main surface Wb of the substrate W. Therefore, the substrate W is deflected due to the unevenness of the second main surface Wb of the substrate W, and an uneven shape is also formed on the first main surface Wa of the substrate W. Therefore, an unacceptable degree of defocus may occur on the first main surface Wa of the substrate W.

[0040] The uneven shape of the second main surface Wb of the substrate W does not necessarily have to be formed by the adhering matter Ad. The uneven shape may also be caused by scratches caused by contact between the second main surface Wb of the substrate W and a member in a pretreatment device. That is, when a scratch occurs on the second main surface Wb of the substrate W, a depression occurs on the second main surface Wb and the contour of the depression may rise. Therefore, unevenness may be formed on the second main surface Wb of the substrate W. In the following, a defect that causes an uneven shape on the second main surface Wb of the substrate W is also called an uneven defect. The uneven defect includes, for example, at least one of the adhering matter Ad and scratches. The uneven defect may also include a defect called a boat mark that occurs at a contact point between the substrate W and a member that supports or holds the substrate W.

[0041] In this embodiment, the processing unit 1 performs a removal process to remove at least a portion (e.g., most of) the unevenness defects on the second main surface Wb of the substrate W to make the second main surface Wb of the substrate W flatter. The following mainly describes a case where an attachment Ad is adhered to the second main surface Wb of the substrate W. Here, the portion of the attachment Ad to be removed is a convex portion having a height that causes an unacceptable focus deviation in the exposure apparatus.

[0042] As shown in FIGS. 1 and 2, the processing unit 1 includes a substrate holding part 2, a discharge part 3, a first brush 41, a first brush movement drive part 61, and a control part 9.

[0043] The substrate holding unit 2 holds the substrate W in a horizontal position while rotating the substrate W around a rotation axis Q1. The horizontal position here means that the thickness direction of the substrate W is along the vertical direction. Here, the substrate holding unit 2 holds the substrate W in a position in which the first main surface Wa faces vertically downward (i.e., the second main surface Wb faces vertically upward). The rotation axis Q1 is an axis that passes through the center of the substrate W and is along the vertical direction. The substrate holding unit 2 may also be called a spin chuck.

[0044] In the example of FIG. 1, the substrate holding unit 2 includes a spin base 21, chuck pins 22, and a rotation drive unit 23. The spin base 21 has a plate-like shape (for example, a disk shape) and is provided with its thickness direction aligned along the vertical direction. A plurality of chuck pins 22 are provided on the upper surface of the spin base 21. The plurality of chuck pins 22 are provided at equal intervals along the circumferential direction about the rotation axis Q1. The plurality of chuck pins 22 are provided so as to be displaceable between a holding position and a release position, which will be described next. The holding position is a position where the chuck pins 22 abut against the periphery of the substrate W. The plurality of chuck pins 22 hold the substrate W by stopping at the respective holding positions. In FIG. 1 and FIG. 2, the chuck pins 22 stopped at the holding position are shown. The release position is a position where each chuck pin 22 is separated from the substrate W. The plurality of chuck pins 22 stop at the respective release positions, whereby the holding of the substrate W by the plurality of chuck pins 22 is released. The substrate holding unit 2 also includes a pin driving unit (not shown) that displaces the chuck pins 22. The pin driving unit includes a driving source such as a motor and an air cylinder, and is controlled by the control unit 9.

[0045] The rotation drive unit 23 includes a shaft 231 and a motor 232. The upper end of the shaft 231 is connected to the lower surface of the spin base 21, and the shaft 231 extends from the lower surface of the spin base 21 along a rotation axis Q1. The motor 232 is controlled by the control unit 9 to rotate the shaft 231 about the rotation axis Q1. As a result, the spin base 21, the chuck pins 22, and the substrate W rotate together about the rotation axis Q1.

[0046] It should be noted that the substrate holding portion 2 does not necessarily have to have the chuck pin 22. For example, the substrate holding portion 2 may hold the substrate W by a chuck method such as a vacuum chuck, an electrostatic chuck, or a Bernoulli chuck.

[0047] The discharge unit 3 discharges the processing liquid toward the second main surface Wb of the substrate W held by the substrate holding unit 2. The processing liquid is a liquid used for processing the substrate W, and a specific example will be described later. The discharge unit 3 includes a nozzle 31. The nozzle 31 is provided vertically above the substrate W held by the substrate holding unit 2. In the example of FIG. 1 and FIG. 2, the nozzle 31 is provided radially outward from the substrate W held by the substrate holding unit 2. The nozzle 31 has a discharge port 3a at its tip, and discharges the processing liquid from the discharge port 3a. As shown in FIG. 1, the nozzle 31 may discharge the processing liquid toward the rotation axis Q1 side and in a vertically downward oblique direction. The processing liquid discharged from the nozzle 31 may land on the second main surface Wb of the substrate W. The processing liquid that has landed on the second main surface Wb of the substrate W flows radially outward due to centrifugal force accompanying the rotation of the substrate W, and is scattered outward from the periphery of the substrate W.

[0048] 1 and 2, the nozzle 31 is used for both the chemical liquid and the rinsing liquid as the processing liquid. The chemical liquid is a liquid used in a removal process described below, and the rinsing liquid is a liquid for pushing the chemical liquid away from the second main surface Wb of the substrate W. Specific examples of the chemical liquid and the rinsing liquid will be described later.

[0049] In the example of FIG. 1 and FIG. 2, the discharge unit 3 further includes a supply pipe 32, a supply pipe 32a, a supply pipe 32b, a supply valve 33a, and a supply valve 33b. The nozzle 31 is connected to the downstream end of the supply pipe 32, and the upstream end of the supply pipe 32 is connected to the downstream end of the supply pipe 32a and the downstream end of the supply pipe 32b. The upstream end of the supply pipe 32a is connected to a chemical supply source. The chemical supply source has a tank (not shown) for storing the chemical, and supplies the chemical to the upstream end of the supply pipe 32a. As the chemical, for example, a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, and hydrogen peroxide water can be applied. Specifically, as the chemical, a mixture (SC1) of ammonia and hydrogen peroxide water, and TMAH (tetramethylammonium hydroxide: tetramethylammonium hydroxide) can be used.

[0050] Supply pipe 32a is provided with supply valve 33a, flow rate adjustment valve 34a, and flow meter 35a. Supply valve 33a switches supply pipe 32a between open and closed states. Flow rate adjustment valve 34a adjusts the flow rate of the chemical solution flowing through supply pipe 32a. Supply valve 33a and flow rate adjustment valve 34a are controlled by controller 9. Flow meter 35a measures the flow rate of the chemical solution flowing through supply pipe 32a, and outputs an electrical signal indicating the measurement result to controller 9. Flow meter 35a is, for example, an ultrasonic flow meter. Controller 9 may control flow rate adjustment valve 34a based on the flow rate measured by flow meter 35a.

[0051] The upstream end of the supply pipe 32b is connected to a rinse liquid supply source. The rinse liquid supply source has a tank (not shown) for storing the rinse liquid, and supplies the rinse liquid to the upstream end of the supply pipe 32b. As the rinse liquid, pure water, carbonated water, electrolytic ion water, hydrogen water, magnetic water, or ammonia water with a diluted concentration (for example, about 1 ppm) can be used.

[0052] Supply pipe 32b is provided with supply valve 33b, flow rate adjustment valve 34b, and flow meter 35b. Supply valve 33b switches supply pipe 32b between open and closed states. Flow rate adjustment valve 34b adjusts the flow rate of the rinsing liquid flowing through supply pipe 32b. Supply valve 33b and flow rate adjustment valve 34b are controlled by controller 9. Flow meter 35b measures the flow rate of the rinsing liquid flowing through supply pipe 32b, and outputs an electrical signal indicating the measurement result to controller 9. Flow meter 35b is, for example, an ultrasonic flow meter. Controller 9 may control flow rate adjustment valve 34b based on the flow rate measured by flow meter 35b.

[0053] The first brush 41 is used in a removal process described below. Specifically, the first brush 41 moves relative to the second main surface Wb of the substrate W in a state in which a chemical liquid, which is an example of a processing liquid, is supplied to the second main surface Wb of the substrate W and the first brush 41 is in contact with the second main surface Wb of the substrate W. In other words, the first brush 41 slides against the second main surface Wb of the substrate W. This allows the first brush 41 to scrub and clean the second main surface Wb of the substrate W.

[0054] The first brush 41 is an abrasive brush having a sponge-like base made of resin such as polyvinyl alcohol and an abrasive material contained in the base. The abrasive material includes a plurality of abrasive grains. The material of the abrasive grains is not particularly limited, and any material having a hardness sufficient to polish the second main surface Wb of the substrate W can be used.

[0055] The first brush 41 has, for example, a cylindrical shape with a central axis along the vertical direction. At least the lower surface 41a of the first brush 41 contains an abrasive, and the abrasive is exposed at least on the lower surface 41a. The lower surface 41a of the first brush 41 is, for example, a substantially flat surface parallel to a horizontal plane, and has a circular shape in a plan view. The plan view here refers to a view in which the line of sight is along the vertical direction. The diameter of the lower surface 41a of the first brush 41 is smaller than the radius of the substrate W. The diameter of the lower surface 41a may be, for example, a quarter or less, a fifth or less, or a tenth or less of the diameter of the substrate W.

[0056] 1, the processing unit 1 is provided with a first brush holding part 51. The first brush holding part 51 holds the first brush 41. The first brush holding part 51 is provided vertically above the lower surface 41a of the first brush 41, and can hold an upper end portion of the first brush 41. The first brush holding part 51 has, for example, a cylindrical side surface, and in the example of FIG. 1, the diameter of the side surface is larger than the diameter of the first brush 41.

[0057] In the example of FIG. 1 and FIG. 2, the processing unit 1 is provided with an arm 71. The arm 71 extends in the horizontal direction. A first brush driving unit 711 is provided inside the arm 71. The first brush driving unit 711 is controlled by the control unit 9. The first brush driving unit 711 may include a rotation driving unit that rotates the first brush 41 around a rotation axis Q21. The rotation axis Q21 is, for example, an axis that passes through the center of the first brush 41 and is along the vertical direction. The first brush driving unit 711 includes a shaft 712 and a motor (not shown). The shaft 712 extends along the rotation axis Q21 and protrudes vertically downward from the lower surface of the arm 71. The lower end of the shaft 712 is connected to the upper surface of the first brush holding unit 51. The motor rotates the shaft 712 around the rotation axis Q21. As a result, the first brush holder 51 connected to the shaft 712 and the first brush 41 held by the first brush holder 51 rotate together about the rotation axis Q21.

[0058] In addition, the first brush driving unit 711 may be provided with a braking driving unit (not shown) that stops the rotation of the shaft 712, and may be provided with a pressing driving unit (not shown) that presses the first brush 41 against the second main surface Wb of the substrate W with a controllable pressing force.

[0059] 1 and 2, the first brush movement drive unit 61 moves the arm 71, the first brush holding unit 51, and the first brush 41 together. The first brush movement drive unit 61 is controlled by the control unit 9.

[0060] The first brush movement drive unit 61 moves the first brush 41 along, for example, the vertical direction and the horizontal direction. In the example of FIG. 1, the first brush movement drive unit 61 includes a vertical drive unit 611 and a horizontal drive unit 612. The vertical drive unit 611 moves the first brush 41 along the vertical direction. The vertical drive unit 611 can also be said to be an elevation drive unit. The vertical drive unit 611 includes, for example, a drive source such as a motor (not shown) and a power transmission unit (not shown) that converts the rotational force from the drive source into a vertical force. The horizontal drive unit 612 moves the first brush 41 along the horizontal direction. The horizontal drive unit 612 includes, for example, a drive source such as a motor (not shown) and a power transmission unit (not shown) that converts the rotational force from the drive source into a horizontal force. These power transmission units include, for example, a ball screw mechanism or a cam mechanism.

[0061] The first brush movement drive unit 61 moves the first brush 41 between a processing position where the first brush 41 abuts against the second main surface Wb of the substrate W and a first waiting position. The first waiting position is, for example, a position radially outward from the substrate W held by the substrate holding unit 2. The example of FIG. 2 shows the first brush 41 positioned at the first waiting position. The first brush movement drive unit 61 can also move the first brush 41 along the second main surface Wb of the substrate W in a state where the first brush 41 abuts against the second main surface Wb of the substrate W.

[0062] The first brush movement drive unit 61 moves the first brush 41 to the processing position while the nozzle 31 is supplying the chemical liquid to the second main surface Wb of the substrate W while rotating. This allows the lower surface 41a of the first brush 41 to slide against at least a part of the second main surface Wb of the substrate W. Here, the first brush 41 is an abrasive brush, and therefore at least a part of the second main surface Wb of the substrate W is polished to remove at least a part of the deposits Ad.

[0063] As described above, the position of the adhesion Ad on the second main surface Wb of the substrate W depends on each pre-treatment device for the substrate W before it is carried into the processing unit 1. Specifically, the position of the adhesion Ad depends on the contact position between the substrate W and a member that supports or holds the substrate W in each pre-treatment device. For this reason, if the structure of the pre-treatment device is known, the position of the adhesion Ad can be known in advance. Note that the substrate W may pass through a plurality of pre-treatment devices before it is carried into the processing unit 1. In this case, the adhesion Ad in each pre-treatment device may be piled up and adhere to the second main surface Wb of the substrate W. Even in this case, if the structure of the plurality of pre-treatment devices is known, the position of the adhesion Ad can be known in advance.

[0064] Therefore, in this embodiment, the first brush movement drive unit 61 brings the first brush 41 into contact with a processing region R1 including the adhesion Ad on the second main surface Wb of the substrate W. On the other hand, the first brush movement drive unit 61 does not bring the first brush 41 into contact with a non-processing region R2 other than the processing region R1 and not including the adhesion Ad. This processing region R1 can be set in advance.

[0065] Fig. 5 is a diagram illustrating an example of a processing region R1 and a non-processing region R2. As illustrated in Fig. 5, the second main surface Wb of the substrate W is divided into two regions, a processing region R1 and a non-processing region R2. In Fig. 5, the processing region R1 is indicated by hatching with oblique lines.

[0066] In the example of FIG. 5(a), the deposit Ad is located on the peripheral edge of the substrate W, and the processing region R1 is a circular ring region that includes the peripheral edge of the substrate W and is concentric with the substrate W. The outer diameter of the processing region R1 may be the same as the diameter of the substrate W. The inner diameter of the processing region R1 is set so that the processing region R1 includes all of the multiple deposits Ad. Also, in the example of FIG. 5(a), the non-processing region R2 is a circular region located inside the processing region R1.

[0067] In the example of Fig. 5(b), the deposit Ad is located on a virtual circle VC of the substrate W, and the processing region R1 is an annular region that includes the virtual circle VC and is concentric with the substrate W. The outer and inner diameters of the processing region R1 are smaller than the diameter of the substrate W. The outer and inner diameters of the processing region R1 are set so that the processing region R1 includes all of the multiple deposits Ad. Also, in the example of Fig. 5(b), the non-processing region R2 includes an annular region outside the processing region R1 and a circular region inside the processing region R1.

[0068] In the example of FIG. 5(c), the deposits Ad are distributed over most of the second main surface Wb of the substrate W, so the processing region R1 is a circular region concentric with the substrate W. The diameter of the processing region R1 may be slightly smaller than the diameter of the substrate W. In the example of FIG. 5(c), the processing region R1 is slightly smaller than the diameter of the substrate W. The diameter of the processing region R1 is set so that the processing region R1 includes all of the multiple deposits Ad. In the example of FIG. 5(c), the non-processing region R2 is an annular region outside the processing region R1. Note that in the example of FIG. 5(c), the deposits Ad are distributed over most of the second main surface Wb of the substrate W, so the processing region R1 may be set over the entire surface of the second main surface Wb of the substrate W. In other words, the diameter of the processing region R1 may be the same as the diameter of the substrate W.

[0069] The control unit 9 controls the above-mentioned various components of the processing unit 1. FIG. 6 is a block diagram showing an example of the configuration of the control unit 9. The control unit 9 is an electronic circuit, and has, for example, a data processing unit 91 and a storage unit 92. In the specific example of FIG. 6, the data processing unit 91 and the storage unit 92 are connected to each other via a bus. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit 92 may have a non-transient storage unit (for example, a ROM (Read Only Memory)) 921 and a temporary storage unit (for example, a RAM (Random Access Memory)) 922. The non-transient storage unit 921 may store, for example, a program that specifies the processing to be executed by the control unit 9. The data processing unit 91 executes this program, so that the control unit 9 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 9 may be executed by hardware such as a dedicated logic circuit.

[0070] 6, the control unit 9 may be electrically connected to a user interface 96. The user interface 96 includes, for example, a display (not shown) such as a liquid crystal display, and input devices (not shown) such as a keyboard and a mouse. The user can check the contents displayed on the display, and can also input various information into the input device.

[0071] As shown in Fig. 6, the control unit 9 may be electrically connected to a communication circuit 98. The communication circuit 98 is a so-called communication interface, and communicates with an external device by wire or wirelessly. The external device may be, for example, a preprocessing device or a management device that centrally manages a plurality of processing devices. The control unit 9 can transmit and receive information to and from the external device through the communication circuit 98.

[0072] As shown in FIG. 6, the control unit 9 may be electrically connected to a storage unit 97. The storage unit 97 is a non-transient storage unit, and may be, for example, a memory or a hard disk. In the example of FIG. 6, data D1 is stored in the storage unit 97. The data D1 includes data indicating a processing region R1 of the second main surface Wb of the substrate W. In addition, for example, the data D1 includes a recipe indicating a processing procedure for the substrate W, and the recipe includes data indicating a movement range of the first brush 41 on the second main surface Wb of the substrate W in the removal process. As will be clear from the following description, this movement range corresponds to the processing region R1. Such a recipe may be generated by a user's input to the user interface 96. The control unit 9 reads out the data D1 (recipe) from the storage unit 97, and controls the processing unit 1 based on the data D1. This allows the processing unit 1 to perform the substrate processing described below.

[0073] <An example of substrate processing> Next, an example of processing of the substrate W by the processing unit 1 will be described. Fig. 7 is a flow chart showing an example of the operation of the processing unit 1 according to the first embodiment. The control unit 9 causes the processing unit 1 to execute processes from step S1 to step S5 according to a preset processing procedure (recipe).

[0074] First, the transfer robot transfers the substrate W to the processing unit 1. Then, the substrate holding part 2 holds the substrate W received from the transfer robot (step S1: holding step). As a specific example, the substrate holding part 2 displaces the multiple chuck pins 22 from their respective release positions to their holding positions. As a result, the multiple chuck pins 22 hold the substrate W. The substrate holding part 2 continues to hold the substrate W until the processing of the substrate W is completed.

[0075] Next, the processing unit 1 performs a removal process on the substrate W (step S2: removal step). That is, the processing unit 1 supplies a chemical solution to the second main surface Wb of the substrate W while sliding the first brush 41 against the processing region R1, avoiding the non-processing region R2. Specifically, the substrate holder 2 rotates the substrate W around the rotation axis Q1, the control unit 9 opens the supply valve 33a, and the first brush movement driver 61 brings the first brush 41 into contact with the processing region R1 of the substrate W. Information indicating the processing region R1 is included in the data D1.

[0076] FIG. 8 is a diagram showing an example of the state of the processing unit 1 in the removal process. In the example of FIG. 8, the chemical liquid discharged toward the second main surface Wb of the substrate W is shown as a sandy area. The chemical liquid lands on the second main surface Wb of the substrate W. The chemical liquid that lands on the second main surface Wb of the substrate W spreads around the landing position, flows radially outward due to centrifugal force caused by the rotation of the substrate W, and splashes outward from the periphery of the substrate W. As a result, the chemical liquid is supplied to the entire surface of the second main surface Wb of the substrate W. Note that the chemical liquid on the second main surface Wb of the substrate W is not shown in FIG. 8.

[0077] Figure 8(a) shows an example of an adhesion Ad adhered to the peripheral portion of the second main surface Wb of the substrate W, Figure 8(b) shows an example of an adhesion Ad adhered to a virtual circle VC of the second main surface Wb of the substrate W, and Figure 8(c) shows an example of an adhesion Ad dispersed over the entire second main surface Wb of the substrate W.

[0078] In the example of FIG. 8(a), the first brush movement drive unit 61 brings the first brush 41 into contact with the second main surface Wb of the substrate W at the contact position Pb11. In the example of FIG. 8(a), the lower surface 41a of the first brush 41 located at the contact position Pb11 is in contact with the entire radial area of ​​the processing region R1. The first brush movement drive unit 61 stops the first brush 41 at the contact position Pb11 for a predetermined removal processing time. In the removal processing, the substrate W rotates about the rotation axis Q1, so that the first brush 41 can relatively revolve around the rotation axis Q1 in the processing region R1. Therefore, the processing unit 1 can slide against the first brush 41 on the entire surface of the processing region R1 in the removal processing.

[0079] On the other hand, although different from the example of FIG. 8(a), there are also cases where the radial width of the processing region R1 is wider than the diameter of the lower surface 41a of the first brush 41. In this case, the first brush movement drive unit 61 moves the first brush 41 along the radial direction in the removal process. The movement direction of the first brush 41 is, for example, from the radial inside to the radial outside. The movement speed of the first brush 41 is preset to a speed at which the first brush 41 can abut against the entire processing region R1. This allows the processing unit 1 to slide the first brush 41 over the entire processing region R1 in the removal process.

[0080] In the example of FIG. 8(b), the first brush movement drive unit 61 brings the first brush 41 into contact with the second main surface Wb of the substrate W at a contact position Pb12. The contact position Pb12 is, for example, a position on a virtual circle VC. In the example of FIG. 8(b), the lower surface 41a of the first brush 41 located at the contact position Pb12 contacts the entire radial area of ​​the processing region R1, so that in the removal process, the first brush movement drive unit 61 stops the first brush 41 at the contact position Pb12 for a predetermined removal process time. Since the substrate W rotates around the rotation axis Q1, the first brush 41 can slide against the entire processing region R1.

[0081] On the other hand, when the radial width of the processing area R1 is wider than the diameter of the lower surface 41a of the first brush 41, the first brush movement drive unit 61 moves the first brush 41 along the radial direction, causing the first brush 41 to slide over the entire processing area R1.

[0082] In the example of FIG. 8(c), the first brush movement drive unit 61 moves the first brush 41 from the central position Pb13 to the peripheral position Pb14 along the second main surface Wb of the substrate W while the first brush 41 is in contact with the second main surface Wb of the substrate W. The central position Pb13 is, for example, a position where the center of the lower surface 41a of the first brush 41 faces the center of the substrate W. The peripheral position Pb14 is a position radially outward from the central position Pb13, and as a more specific example, a position where the radially outer end of the lower surface 41a of the first brush 41 coincides with the peripheral edge of the substrate W or is radially outward from the peripheral edge of the substrate W. In the example of FIG. 8(c), the processing region R1 is set over the entire second main surface Wb of the substrate W, and the first brush 41 slides over the entire processing region R1 by moving from the central position Pb13 to the peripheral position Pb14 during the rotation of the substrate W.

[0083] As described above, in a state where the chemical liquid is supplied to the second main surface Wb of the substrate W, the lower surface 41a of the first brush 41 comes into contact with the processing region R1 of the second main surface Wb of the substrate W during rotation. This allows the processing region R1 of the lower surface 41a of the first brush 41 to be rubbed. Here, since the first brush 41 is an abrasive brush, it is possible to polish the processing region R1. In this case, step S2 can also be said to be a polishing process. This allows the processing unit 1 to polish the adhering matter Ad in the processing region R1 and remove at least a part of it from the second main surface Wb of the substrate W, even if the adhering matter Ad is fixed to the substrate W. That is, the processing unit 1 removes at least a part of the unevenness defects to make the second main surface Wb of the substrate W flatter. In other words, the processing unit 1 reduces the height of the convex parts of the second main surface Wb of the substrate W.

[0084] When the processing region R1 of the substrate W has been sufficiently polished, the first brush movement drive unit 61 raises the first brush 41 and moves the first brush 41 to the first standby position, while the control unit 9 closes the supply valve 33a. The removal processing time is set in advance to a time sufficient for polishing the processing region R1 to be sufficiently performed. When the first brush movement drive unit 61 moves the first brush 41 along the radial direction, the first brush movement drive unit 61 may move the first brush 41 during the removal processing time. To explain with reference to FIG. 8(c), the first brush movement drive unit 61 may move the first brush 41 from the central position Pb13 to the peripheral position Pb14 during the removal processing time.

[0085] Next, the processing unit 1 supplies a rinsing liquid to the second main surface Wb of the substrate W (step S3: rinsing step). Specifically, the control unit 9 opens the supply valve 33b. This causes the rinsing liquid to be discharged from the nozzle 31 toward the second main surface Wb of the substrate W during rotation. The rinsing liquid that has landed at the center of the second main surface Wb of the substrate W flows radially outward due to the centrifugal force associated with the rotation of the substrate W, and is scattered from the periphery of the substrate W. At this time, the rinsing liquid pushes the chemical liquid on the second main surface Wb of the substrate W radially outward. This causes the processing liquid on the second main surface Wb of the substrate W to be replaced from the chemical liquid to the rinsing liquid.

[0086] When the chemical liquid has been sufficiently replaced with the rinsing liquid, the control unit 9 closes the supply valve 33b. As a specific example, the control unit 9 measures the elapsed time from the start of the discharge of the rinsing liquid, and switches the supply valve 33b from the open state to the closed state when the elapsed time is equal to or longer than a predetermined rinsing time. The rinsing time is set in advance to a time that allows the chemical liquid to be sufficiently replaced with the rinsing liquid.

[0087] Next, the processing unit 1 dries the substrate W (step S4: drying process). More specifically, the substrate holding part 2 increases the rotation speed of the substrate W (so-called spin dry). When the substrate W is sufficiently dry, the substrate holding part 2 stops the rotation of the substrate W. As a specific example, the control part 9 measures the elapsed time from when the discharge of the rinsing liquid is stopped, and determines whether the measured time is equal to or longer than a predetermined drying time. The drying time is preset to a time that allows the substrate W to be sufficiently dried. When the elapsed time is equal to or longer than the drying time, the substrate holding part 2 stops the rotation of the substrate W.

[0088] Next, the substrate holder 2 releases the hold on the substrate W (step S5: holding release step). Then, the transport robot carries the processed substrate W out of the processing unit 1.

[0089] As described above, the processing unit 1 can remove at least a part of the deposits Ad on the second main surface Wb of the substrate W, and can make the second main surface Wb of the substrate W flatter. Moreover, in the above example, the first brush 41 abuts against the processing region R1 but does not abut against the non-processing region R2. This makes it possible to suppress unnecessary wear of the first brush 41 and extend the life of the first brush 41. In addition, the power consumption of the processing unit 1 can be reduced. Furthermore, since the time spent by the first brush 41 to process the non-processing region R2 is not required, the removal processing time can also be shortened.

[0090] In the above example, since the first brush 41 is a polishing brush, even if the adhering matter Ad is fixed to the substrate W, at least a part of the adhering matter Ad can be removed by polishing. Therefore, the processing unit 1 can appropriately planarize the second main surface Wb of the substrate W. On the other hand, the adhering matter Ad removed from the second main surface Wb of the substrate W by polishing with the first brush 41 flows on the second main surface Wb of the substrate W as particles together with the chemical solution. That is, the processing region R1 polished by the first brush 41 can function as a particle generation source. If the amount of particles generated increases, the possibility that the particles will re-adhere to the second main surface Wb of the substrate W increases. However, in this embodiment, the first brush 41 abuts on the processing region R1 but does not abut on the non-processing region R2. Therefore, the amount of particles generated can be reduced compared to when the first brush 41 abuts on the entire surface of the second main surface Wb of the substrate W. Therefore, the possibility that particles will remain on the second main surface Wb of the substrate W can be reduced.

[0091] <Chemical solution> If an alkaline chemical such as SC1 is used as the chemical, the zeta potential of the second main surface Wb of the substrate W can be made negative. In addition, the zeta potential of the deposits Ad (particles) removed from the second main surface Wb of the substrate W can also be made negative. Therefore, the particles that have once left the second main surface Wb are electrically repelled by the second main surface Wb of the substrate W. This reduces the possibility that the particles will reattach to the second main surface Wb of the substrate W.

[0092] <Second embodiment> Fig. 9 is a vertical cross-sectional view showing an example of the configuration of a processing unit 1A according to the second embodiment, and Fig. 10 is a plan view showing an example of the configuration of a processing unit 1A according to the second embodiment. The processing unit 1A differs from the processing unit 1 in the presence or absence of a second brush 42 and a second brush movement drive unit 62. In the second embodiment, the first brush 41 is an abrasive brush.

[0093] The second brush 42 is a softer brush than the first brush 41 and is a non-abrasive brush that does not contain an abrasive. For example, the second brush 42 is a sponge-like brush made of a resin such as polyvinyl alcohol. The second brush 42 has, for example, a cylindrical shape having a central axis along the vertical direction. The lower surface 42a of the second brush 42 is a substantially flat surface parallel to the horizontal plane and has a circular shape in a plan view. The diameter of the lower surface 42a of the second brush 42 is smaller than the radius of the substrate W. The diameter of the lower surface 42a may be, for example, one-quarter or less, one-fifth or less, or one-tenth or less of the diameter of the substrate W. The lower surface 42a of the second brush 42 abuts against the second main surface Wb of the substrate W, as described later.

[0094] 9, the processing unit 1A is provided with a second brush holding part 52. The second brush holding part 52 holds the second brush 42. An example of the configuration of the second brush holding part 52 is similar to that of the first brush holding part 51.

[0095] In the example of FIG. 9 and FIG. 10, the processing unit 1A is provided with an arm 72. The arm 72 extends in the horizontal direction. A second brush driving unit 721 is provided inside the arm 72. The second brush driving unit 721 is controlled by the control unit 9. The second brush driving unit 721 may include a rotation driving unit that rotates the second brush 42 around a rotation axis Q22. The rotation axis Q22 is, for example, an axis that passes through the center of the second brush 42 and is along the vertical direction. The second brush driving unit 721 includes a shaft 722 and a motor (not shown). The shaft 722 extends along the rotation axis Q22 and protrudes vertically downward from the lower surface of the arm 72. The lower end of the shaft 722 is connected to the upper surface of the second brush holding unit 52. The motor rotates the shaft 722 around the rotation axis Q22. As a result, the second brush holder 52 connected to the shaft 722 and the second brush 42 held by the second brush holder 52 rotate together about the rotation axis Q22.

[0096] In addition, the second brush driving unit 721 may be provided with a braking driving unit (not shown) that stops the rotation of the shaft 722, and may be provided with a pressing driving unit (not shown) that presses the second brush 42 against the second main surface Wb of the substrate W with a controllable pressing force.

[0097] The second brush movement drive unit 62 moves the second brush 42. In the example of Fig. 9 and Fig. 10, the second brush movement drive unit 62 moves the arm 72, the second brush holding unit 52 and the second brush 42 as a unit. The second brush movement drive unit 62 moves the second brush 42, for example, along each of the vertical direction and the horizontal direction. An example of the configuration of the second brush movement drive unit 62 is similar to that of the first brush movement drive unit 61.

[0098] The second brush movement drive unit 62 moves the second brush 42 between a processing position where the second brush 42 abuts against the second main surface Wb of the substrate W and a second waiting position. The second waiting position is, for example, a position radially outward from the substrate W held by the substrate holding unit 2. In the example of FIG. 10, the second brush 42 is shown positioned at the second waiting position. In the example of FIG. 10, the second waiting position is a position on the opposite side of the first waiting position of the first brush 41 with respect to the center of the substrate W in a plan view. In other words, the substrate holding unit 2 is provided between the first waiting position and the second waiting position in a plan view. In addition, the second brush movement drive unit 62 can also move the second brush 42 along the second main surface Wb of the substrate W in a state where the second brush 42 abuts against the second main surface Wb of the substrate W.

[0099] Next, an example of processing of the substrate W by the processing unit 1A will be described. Fig. 11 is a flow chart showing an example of the operation of the processing unit 1A according to the second embodiment. The control unit 9 causes the processing unit 1A to execute processes from step S11 to step S16 according to a preset processing procedure (recipe).

[0100] First, the transport robot transports the substrate W to the processing unit 1. Then, similar to step S1, the substrate holder 2 holds the substrate W received from the transport robot (step S11: holding step). Next, similar to step S2, the processing unit 1A performs a removal process on the substrate W (step S12: removing step). As a result, the first brush 41 polishes the processing region R1 while avoiding the non-processing region R2.

[0101] Next, the processing unit 1A performs a scrubbing process on the substrate W (step S13: scrubbing step). That is, the processing unit 1A slides the second brush 42 against the processing region R1 and the non-processing region R2 of the substrate W while supplying a chemical solution to the second main surface Wb of the substrate W. Specifically, the substrate holder 2 rotates the substrate W around the rotation axis Q1, and the nozzle 31 ejects the chemical solution toward the second main surface Wb of the substrate W while the second brush movement driver 62 moves the second brush 42 to the processing position.

[0102] Fig. 12 is a diagram showing an example of a time change in the state of the processing unit 1A during scrubber processing. In the example of Fig. 12, first, the second brush movement drive unit 62 lowers the second brush 42 from directly above the central position Pb21 of the substrate W, and brings the lower surface 42a of the second brush 42 into contact with the second main surface Wb of the substrate W. The central position Pb21 is set in advance, for example, and as a more specific example, is a position where the center of the lower surface 42a of the second brush 42 faces the center of the substrate W. The central position Pb21 is also included in, for example, the data D1 (recipe).

[0103] Then, the second brush movement drive unit 62 moves the second brush 42 from the central position Pb21 to the peripheral position Pb22 along the second main surface Wb of the substrate W while the second brush 42 is in contact with the second main surface Wb of the substrate W during rotation. The peripheral position Pb22 is set in advance, for example, and is a position radially outward from the central position Pb21. As a more specific example, the peripheral position Pb22 may be a position where a radially outer end of the lower surface 42a of the second brush 42 coincides with the peripheral edge of the substrate W, or is radially outward from the peripheral edge of the substrate W. The peripheral position Pb22 is also included in, for example, the data D1 (recipe).

[0104] The second brush movement drive unit 62 moves the second brush 42 from the central position Pb21 to the peripheral position Pb22 in a preset scrubber processing time. This scrubber processing time is also included in the data D1 (recipe).

[0105] The second brush driving unit 721 may rotate the second brush 42 about the rotation axis Q22 at least during movement of the second brush 42 from the central position Pb21 to the peripheral position Pb22. Furthermore, the second brush driving unit 721 may press the second brush 42 toward the second main surface Wb of the substrate W with a preset pressing force. The value of the pressing force is also included in the data D1 (recipe).

[0106] When the second brush 42 reaches the peripheral position Pb22, the second brush driver 721 stops the rotation of the second brush 42, and the second brush movement driver 62 raises the second brush 42. Then, the second brush movement driver 62 moves the second brush 42 to the second standby position. In addition, the control unit 9 closes the supply valve 33a to stop the discharge of the chemical solution from the nozzle 31.

[0107] As described above, in a state where the chemical liquid is supplied to the second main surface Wb of the substrate W, the lower surface 42a of the second brush 42 comes into contact with the second main surface Wb of the substrate W during rotation. This allows the lower surface 42a of the second brush 42 to scrub the second main surface Wb of the substrate W. Since the second brush 42 comes into contact with the entire surface of the second main surface Wb of the substrate W, the entire surface of the second main surface Wb of the substrate W can be cleaned. This allows at least a portion of the particles on the second main surface Wb of the substrate W to be removed. The particles referred to here include the deposits Ad that are not fixed to the second main surface Wb of the substrate W and are attached to the second main surface Wb. In other words, the particles referred to here include the deposits Ad that are separated from the second main surface Wb of the substrate W by polishing with the first brush 41.

[0108] Next, the processing unit 1A supplies a rinsing liquid to the second main surface Wb of the substrate W (step S14: rinsing step) similar to step S3, and then dries the substrate W (step S15: drying step) similar to step S4. Next, the substrate holder 2 releases its hold on the substrate W (step S16: holding release step) similar to step S5. Then, the transport robot unloads the processed substrate W from the processing unit 1A.

[0109] As described above, in the second embodiment, the processing unit 1A also performs the removal process, and therefore at least a part of the deposit Ad adhered to the processing region R1 can be removed. On the other hand, the deposit Ad separated from the second main surface Wb of the substrate W flows as particles on the second main surface Wb of the substrate W together with the chemical solution. Therefore, there is a slight possibility that the particles may re-adhere to the second main surface Wb of the substrate W. The particles may re-adhere not only to the processing region R1 but also to the non-processing region R2.

[0110] In the second embodiment, the processing unit 1A performs a scrubbing process using the second brush 42 after the removal process. Since the second brush 42 is a non-abrasive brush, the second main surface Wb of the substrate W is not polished, and no particles associated with polishing are generated. The second brush 42 scrubs and cleans the entire surface of the second main surface Wb of the substrate W. Therefore, even if particles generated in the removal process reattach to the processing region R1 and the non-processing region R2 of the second main surface Wb of the substrate W, at least a part (e.g., most of) the particles can be removed in the scrubbing process. Therefore, the number of particles remaining on the second main surface Wb of the substrate W can be further reduced.

[0111] <Third embodiment> FIG. 13 is a vertical cross-sectional view showing an example of the configuration of a processing unit 1B according to the third embodiment. The processing unit 1B differs from the processing unit 1 in the presence or absence of a second polishing brush 41B and a polishing brush movement drive unit 61B. In the third embodiment, the first brush 41 is a polishing brush. Therefore, in the third embodiment, the first brush 41 is also called the first polishing brush 41A. In the following, the reference numerals of the components related to the first polishing brush 41A may be added with "A". For example, the first brush movement drive unit 61 is also called the first brush movement drive unit 61A.

[0112] The second polishing brush 41B is a polishing brush having a sponge-like base made of resin such as polyvinyl alcohol and an abrasive contained in the base. The abrasive contains a plurality of abrasive grains. The material of the abrasive grains is not particularly limited, and any material having a hardness sufficient to polish the second main surface Wb of the substrate W can be used. The abrasive grain size of the second polishing brush 41B is higher than that of the first polishing brush 41A. In other words, the grain size (e.g., average grain size) of the abrasive contained in the second polishing brush 41B is smaller than the grain size (e.g., average grain size) of the abrasive contained in the first polishing brush 41A. In further other words, the second polishing brush 41B contains a finer abrasive than that of the first polishing brush 41A.

[0113] The second polishing brush 41B has, for example, a cylindrical shape with a central axis along the vertical direction. The lower surface 41Ba of the second polishing brush 41B is a substantially flat surface parallel to a horizontal plane and has a circular shape in a plan view. At least the lower surface 41Ba of the second polishing brush 41B contains an abrasive, and the abrasive is exposed at least on the lower surface 41Ba. The lower surface 41Ba of the second polishing brush 41B abuts against the second main surface Wb of the substrate W as described below.

[0114] 13, the processing unit 1B is provided with a second abrasive brush holder 51B. The second abrasive brush holder 51B holds a second abrasive brush 41B. An example of the configuration of the second abrasive brush holder 51B is similar to that of the first brush holder 51A.

[0115] In the example of FIG. 13, the processing unit 1B is provided with an arm 71B. The arm 71B extends in the horizontal direction. A second abrasive brush driving unit 711B is provided inside the arm 71B. The second abrasive brush driving unit 711B is controlled by the control unit 9. The second abrasive brush driving unit 711B may include a rotation driving unit that rotates the second abrasive brush 41B around a rotation axis Q21B. The rotation axis Q21B is, for example, an axis that passes through the center of the second abrasive brush 41B and is along the vertical direction. The second abrasive brush driving unit 711B includes a shaft 712B and a motor (not shown). The shaft 712B extends along the rotation axis Q21B and protrudes vertically downward from the lower surface of the arm 71B. The lower end of the shaft 712B is connected to the upper surface of the second abrasive brush holding unit 51B. The motor rotates the shaft 712B around the rotation axis Q21B. As a result, the second abrasive brush holder 51B connected to the shaft 712B and the second abrasive brush 41B held by the second abrasive brush holder 51B rotate together about the rotation axis Q21B.

[0116] In addition, the second abrasive brush driving unit 711B may be provided with a braking driving unit (not shown) that stops the rotation of the shaft 712B, and may be provided with a pressing driving unit (not shown) that presses the second abrasive brush 41B against the second main surface Wb of the substrate W with a controllable pressing force.

[0117] The abrasive brush movement drive unit 61B moves the second abrasive brush 41B. In the example of Fig. 13, the abrasive brush movement drive unit 61B moves the arm 71B, the second abrasive brush holder 51B, and the second abrasive brush 41B together. The abrasive brush movement drive unit 61B moves the second abrasive brush 41B, for example, along both the vertical direction and the horizontal direction. An example of the configuration of the abrasive brush movement drive unit 61B is similar to that of the first brush movement drive unit 61A.

[0118] The polishing brush movement drive unit 61B moves the second polishing brush 41B between a processing position where the second polishing brush 41B contacts the second main surface Wb of the substrate W and a third standby position. The third standby position is, for example, a position radially outward of the substrate W held by the substrate holding unit 2. The example of FIG. 13 shows the second polishing brush 41B positioned at the third standby position.

[0119] Next, an example of processing of the substrate W by the processing unit 1B will be described. The example of processing by the processing unit 1B is the same as the flowchart shown in FIG. 7. However, an example of a specific operation of the removal processing (step S2) is different. FIG. 14 is a flowchart showing a specific example of the removal processing according to the third embodiment. In the example of FIG. 14, the processing unit 1B performs a polishing process on the second main surface Wb of the substrate W using the first polishing brush 41A (step S21: rough polishing step). That is, the processing unit 1B slides the first polishing brush 41A against the processing region R1 while avoiding the non-processing region R2, while supplying a chemical solution to the second main surface Wb of the substrate W. Specifically, the substrate holder 2 rotates the substrate W around the rotation axis Q1, and the nozzle 31 discharges the chemical solution toward the second main surface Wb of the substrate W, while the first brush movement drive unit 61 moves the first polishing brush 41A to a processing position. The chemical solution is discharged by the control unit 9 opening the supply valve 33a. The first brush movement drive unit 61A brings the first abrasive brush 41A into contact with the treatment region R1 and does not bring the first abrasive brush 41A into contact with the non-treatment region R2. That is, step S21 is substantially the same as step S2 in the first embodiment.

[0120] Since the grain size of the abrasive of the first polishing brush 41A is large, the processing unit 1B can polish the processing region R1 of the substrate W with a larger polishing amount. Therefore, the processing unit 1B can more efficiently remove the large deposit Ad. On the other hand, the polishing by the first polishing brush 41A causes relatively deep abrasions (hereinafter, referred to as scratches) in the processing region R1 of the substrate W. FIG. 15 is a cross-sectional view showing an example of a configuration of a part of the substrate W. In FIG. 15, a scratch SC is generated on the second main surface Wb of the substrate W. In the scratch SC, a recess is generated on the second main surface Wb, and the second main surface Wb rises at the outline of the recess. In other words, a convex portion is formed on the second main surface Wb of the substrate W at the outline of the scratch SC. Although the height of the convex portion is smaller than the maximum height of the deposit Ad, the convex portion may cause the focus deviation of the exposure apparatus.

[0121] Therefore, in the third embodiment, following step S21, the processing unit 1B performs a polishing process on the second main surface Wb of the substrate W using the second polishing brush 41B (step S22: fine polishing step). That is, while supplying a chemical solution to the second main surface Wb of the substrate W, the processing unit 1B slides the second polishing brush 41B against the processing region R1 while avoiding the non-processing region R2. Specifically, while the substrate holder 2 rotates the substrate W around the rotation axis Q1 and the nozzle 31 ejects the chemical solution toward the second main surface Wb of the substrate W, the polishing brush movement drive unit 61B moves the second polishing brush 41B to the processing position. The polishing brush movement drive unit 61B brings the second polishing brush 41B into contact with the processing region R1. Here, the polishing brush movement drive unit 61B does not bring the second polishing brush 41B into contact with the non-processing region R2.

[0122] Since the grain size of the abrasive of the second polishing brush 41B is smaller than that of the first polishing brush 41A, the second polishing brush 41B can polish the processing region R1 of the substrate W with a smaller polishing amount. Therefore, the processing unit 1B can remove at least a part of the convex portion of the outline of the scratch SC generated in step S21, and make the second main surface Wb of the substrate W flatter.

[0123] <Fourth embodiment> An example of the configuration of the processing unit 1 according to the fourth embodiment is similar to any one of the first to third embodiments. In the fourth embodiment, data D1 indicating the processing region R1 will be described. Table 1 shows an example of the configuration of the data D1 according to the fourth embodiment.

[0124] [Table 1]

[0125] As shown in Table 1, the data D1 is data indicating the correspondence between the positional relation information PD and the processing region R1. The positional relation information PD is data regarding the position of an uneven defect (e.g., an attachment Ad) on the second main surface Wb of the substrate W. The positional relation information PD may be coordinate data indicating the position of an uneven defect on the second main surface Wb of the substrate W. In Table 1, when the positional relation information PD is data Pda, the processing region R1 is associated with the region R1a. For example, the data Pda is data indicating the position of the attachment Ad in FIG. 4(a), and the region R1a is data indicating the processing region R1 in FIG. 5(a). Similarly, the processing region R1 corresponding to the data Pdb indicating the position of the attachment Ad in FIG. 4(b) is associated with the region R1b which is the processing region R1 in FIG. 5(b), and the processing region R1 corresponding to the data Pdc indicating the position of the attachment Ad in FIG. 4(c) is associated with the region R1c which is the processing region R1 in FIG. 5(c).

[0126] As described above, since the position of the uneven defect depends on the pre-processing device, the position related information PD may be identification information of the pre-processing device. If the substrate W passes through multiple pre-processing devices, the position related information PD may include multiple pieces of identification information. Alternatively, if the processing content of each pre-processing device is specific to the pre-processing device, the position related information PD may be information indicating the processing content in the pre-processing device. If the substrate W passes through multiple pre-processing devices, the position related information PD may include multiple processing contents.

[0127] 16 is a flow chart showing an example of an operation for setting the processing region R1. This operation is executed at least before the removal process (step S2 or step S12). The control unit 9 receives positional relation information PD about the substrate W from, for example, a pretreatment device or a management device through the communication circuit 98 (step S31: positional relation information acquisition step).

[0128] Next, the control unit 9 sets the processing region R1 based on the positional relation information PD (step S32: setting step). Specifically, the control unit 9 reads the data D1 from the storage unit 97, identifies the region corresponding to the positional relation information PD acquired in step S31 based on the data D1, and sets the region as the processing region R1.

[0129] Then, in the removal process, the control unit 9 brings the first brush 41 into contact with the processing region R1 set in step S32.

[0130] As described above, in the fourth embodiment, even if the position of the attachment Ad of the substrate W loaded into the processing unit 1 changes, the positional relation information PD indicating the position is input to the control unit 9. Therefore, the control unit 9 can appropriately determine the processing region R1 based on the positional relation information PD, and the processing unit 1 can appropriately abut the first brush 41 against the processing region R1 including the attachment Ad in the removal process. Therefore, the processing unit 1 can appropriately remove at least a part of the attachment Ad. Moreover, the control unit 9 automatically sets the processing region R1 based on the positional relation information PD. Therefore, the user does not need to set the processing region R1 for each substrate W, and the usability of the processing unit 1 can be improved.

[0131] <Fifth embodiment> 17 is a vertical cross-sectional view showing an example of the configuration of a processing unit 1C according to the fifth embodiment. The processing unit 1C differs from the processing unit 1 in the presence or absence of a sensor 8.

[0132] The sensor 8 detects uneven defects (e.g., deposits Ad) on the second main surface Wb of the substrate W and measures the position of the uneven defect. In the example of FIG. 17, the sensor 8 includes a light source 81 and a light receiving unit 82. In the example of FIG. 17, the light source 81 has an elongated shape extending along a radial direction about the rotation axis Q1. The light source 81 emits measurement light toward the second main surface Wb of the substrate W. Note that in the example of FIG. 17, the arm 71, the first brush holding unit 51, and the first brush 41 are located between the sensor 8 and the substrate W, but during measurement by the sensor 8, these are moved to a position (e.g., a first standby position) other than the area directly above the substrate W. Therefore, the measurement light is irradiated onto the second main surface Wb of the substrate W held by the substrate holding unit 2. Specifically, the measurement light is irradiated onto the second main surface Wb of the substrate W in a band-shaped area extending in the radial direction. This area may include an area from the center of the substrate W to the periphery of the substrate W.

[0133] In the example of FIG. 17, the light receiving unit 82 has an elongated shape extending along the radial direction of the substrate W. That is, in the example of FIG. 17, the sensor 8 is a so-called line sensor. The light receiving unit 82 receives light reflected by the second main surface Wb of the substrate W, and outputs a signal according to the intensity of the reflected light to, for example, the control unit 9. The intensity of the reflected light reflected by the second main surface Wb of the substrate W varies depending on the attachment Ad on the second main surface Wb of the substrate W. For example, since the light is scattered by the attachment Ad, the intensity distribution of the reflected light takes a distribution according to the distribution of the attachment Ad on the second main surface Wb of the substrate W. Therefore, the control unit 9 detects the position of each attachment Ad based on the signal (intensity distribution of the reflected light) from the light receiving unit 82. In this case, it can be said that a part of the function of the control unit 9 belongs to the sensor 8. As a specific example, the sensor 8 (control unit 9) determines the position of each attachment Ad on the second main surface Wb of the substrate W.

[0134] With the light source 81 of the sensor 8 emitting the measurement light, the substrate holding unit 2 rotates the substrate W, whereby the light source 81 of the sensor 8 emits the measurement light onto the entire surface of the second main surface Wb of the substrate W. This allows the sensor 8 to scan the entire surface of the second main surface Wb of the substrate W. Therefore, the control unit 9 can obtain the position of the attachment Ad on the entire surface of the second main surface Wb of the substrate W.

[0135] As shown in FIG. 17, the processing unit 1C may be provided with a sensor movement drive unit 83 that moves the sensor 8 between a measurement position and a sensor standby position. The measurement position is a position where the sensor 8 detects an attachment Ad on the second main surface Wb of the substrate W, and is, for example, a position where the sensor 8 faces the second main surface Wb of the substrate W held by the substrate holder 2 in the vertical direction. The measurement position is, for example, a position where the longitudinal direction of the sensor 8 is along the radial direction. The sensor standby position is a position where the sensor 8 does not detect an attachment Ad on the second main surface Wb of the substrate W, and is, for example, a position radially outward from the substrate W. The sensor movement drive unit 83 may include, for example, a drive source such as a motor and a power transmission unit such as a ball screw mechanism.

[0136] The sensor 8 does not necessarily have to be a long line sensor. For example, the radial length of the light source 81 and the light receiving unit 82 of the sensor 8 may be sufficiently smaller than the radius of the substrate W. In other words, the sensor 8 may be a point sensor. In this case, the sensor movement driving unit 83 may move the sensor 8 back and forth horizontally between the center and the periphery of the substrate W during measurement. This allows the sensor 8 to scan the entire main surface of the substrate W.

[0137] 16, but specific examples of steps S31 and S32 differ from those in the fourth embodiment. This operation is performed between steps S1 and S2 in the first embodiment, or between steps S11 and S12 in the second embodiment. That is, this operation is performed while the substrate holding part 2 holds the substrate W and before the removal process is performed.

[0138] The sensor 8 measures the position of the attachment Ad (Step S31: Position-related information acquisition step). Specifically, first, the sensor movement driving unit 83 moves the sensor 8 to the measurement position. Then, while the substrate holder 2 rotates the substrate W around the rotation axis Q1, the light source 81 of the sensor 8 emits measurement light toward the second main surface Wb of the substrate W. The light receiving unit 82 of the sensor 8 receives the measurement light reflected by the second main surface Wb of the substrate W, so that the reflected light from the entire surface of the second main surface Wb of the substrate W can be obtained. The sensor 8 (specifically, the control unit 9) calculates the position of the attachment Ad on the second main surface Wb of the substrate W based on the intensity distribution of the reflected light. The sensor 8 generates data indicating the position of the attachment Ad as position-related information PD. Then, the sensor movement driving unit 83 moves the sensor 8 to the standby position.

[0139] Next, the control unit 9 sets the processing region R1 based on the position of the adhesion Ad measured by the sensor 8 (i.e., the position related information PD) (step S32: setting process). For example, the control unit 9 sets an annular or circular region including all the adhesions Ad as the processing region R1. As a specific example, the control unit 9 may set the processing region R1 based on the innermost position of the adhesion Ad closest to the center of the substrate W and the outermost position of the adhesion Ad furthest from the center of the substrate W.

[0140] As described above, in the fifth embodiment, the sensor 8 detects the position of a concave-convex defect (e.g., an attachment Ad), and the control unit 9 sets the processing region R1 based on the detected position. This allows the control unit 9 to set a more appropriate processing region R1 with higher accuracy. In addition, the user does not need to set a processing region R1 for each substrate W, improving the usability of the processing unit 1.

[0141] <External device> The sensor 8 may be provided outside the substrate processing apparatus. Fig. 18 is a diagram illustrating an example of a configuration of a substrate processing system 1000. In the example of Fig. 18, the substrate processing system 1000 includes a substrate processing apparatus 100, a carrier transport apparatus 400, and a measuring apparatus 500.

[0142] The substrate processing apparatus 100 includes a load port 111, a first transfer section 112, a plurality of processing units 1, and a second transfer section 122. A carrier C storing a plurality of substrates W is loaded into the load port 111. The first transfer section 112 and the second transfer section 122 are transfer robots. The first transfer section 112 transfers the substrate W between the load port 111 and the second transfer section 122. The second transfer section 122 transfers the substrate W between the first transfer section 112 and the processing units 1. Note that instead of the processing unit 1, a processing unit 1A, a processing unit 1B, or a processing unit 1C may be provided.

[0143] 18, the measuring apparatus 500 includes a load port 501, a transport unit 502, a measurement unit 503, and a control unit 504. The load port 501 is similar to the load port 111, and a carrier C storing a plurality of substrates W is placed on the load port 501. The transport unit 502 is a transport robot, and transports the substrates W between the carrier C placed on the load port 501 and the measurement unit 503.

[0144] The measurement unit 503 includes a substrate holding unit 2C and a sensor 8. The substrate holding unit 2C holds the substrate W carried in by the transport unit 502 in a horizontal position. The substrate holding unit 2C may rotate the substrate W about a rotation axis Q1. An example of the configuration of the substrate holding unit 2C is similar to that of the substrate holding unit 2. The sensor 8 detects the position of an unevenness defect on the second main surface Wb of the substrate W held by the substrate holding unit 2C.

[0145] The control unit 504 controls the measuring device 500. Specifically, the control unit 504 controls the transport unit 502, the substrate holding unit 2C, and the sensor 8. The control unit 504 generates measurement result data (i.e., positional relation information PD) by associating the positions of the unevenness defects detected by the sensor 8 with the substrate W in the carrier C, and transmits the measurement result data to the control unit 9 through a communication circuit (not shown).

[0146] The carrier transport device 400 transports the carrier C to the measuring device 500 , and also removes the carrier C storing the multiple substrates W that have been measured by the measuring device 500 from the measuring device 500 , and transports the carrier C to the substrate processing device 100 .

[0147] The control unit 9 determines the processing region R1 for each substrate W based on the measurement result data (that is, the position related information PD) received from the outside (the measuring device 500).

[0148] According to this example, the sensor 8 is provided outside the processing unit 1 to which the chemical solution is supplied. This reduces the possibility that the sensor 8 is exposed to the chemical solution atmosphere. This allows the sensor 8 to be applied with low chemical solution resistance, making it possible to apply a cheaper sensor 8.

[0149] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is merely an example in all respects, and this disclosure is not limited thereto. In addition, the above-mentioned various modified examples can be combined and applied as long as they are not mutually inconsistent. It is understood that many modified examples not exemplified can be envisioned without departing from the scope of this disclosure.

[0150] In the above example, the processing unit 1 polished the processing region R1 of the substrate W using the first brush 41 containing an abrasive. However, the processing unit 1 may supply a processing liquid containing an abrasive to the second main surface Wb of the substrate W and bring the first brush 41, which does not contain an abrasive, into contact only with the processing region R1. Even in this case, the processing unit 1 can polish the processing region R1. Furthermore, since the first brush 41 does not contact the non-processing region R2, wear of the first brush 41 can also be suppressed. However, in this embodiment, since the processing liquid containing an abrasive is also supplied to the non-processing region R2 of the substrate W, there is a risk of an increase in the amount of particles generated.

[0151] In contrast, if the processing unit 1 brings the first brush 41 containing an abrasive into contact with the processing region R1 while supplying a processing liquid (e.g., a chemical liquid) that does not contain an abrasive to the second main surface Wb of the substrate W, it is possible to prevent generation of particles in the non-processing region R2. Therefore, the number of particles remaining on the second main surface Wb of the substrate W can be more effectively reduced.

[0152] In the above example, uneven defects such as deposits Ad, scratches, and boat marks are formed in the processing region R1 of the second main surface Wb. For this reason, the processing unit 1 polishes the processing region R1. However, this is not necessarily limited to this. For example, when particles are attached in the processing region R1 of the second main surface Wb of the substrate W and particles are not attached in the non-processing region R2, the processing unit 1 may clean only the processing region R1 using a processing liquid that does not contain an abrasive and a first brush 41 that does not contain an abrasive. This also allows the processing unit 1 to remove at least a part of the particles in the processing region R1. In addition, since the contact of the first brush 41 with the non-processing region R2 is avoided, wear of the first brush 41 can be suppressed.

[0153] In the above example, the first brush 41 (first polishing brush 41A), the second brush 42, and the second polishing brush 41B move radially outward along the second main surface Wb of the substrate W, but they may move multiple times. For example, after the first brush 41 moves from a first position on the radial inside to a second position on the radial outside, the first brush movement drive unit 61 raises the first brush 41 and moves the first brush 41 to the first position again. Then, the first brush movement drive unit 61 moves the first brush 41 from the first position to the second position again. [Explanation of symbols]

[0154] 2 Board holding part 3 Discharge part 31 Nozzle 41 First Brush 41A First Abrasive Brush 41B No. 2 Abrasive Brush 42 2nd Brush 61 First brush movement drive unit 61B Abrasive brush movement drive unit 62 Second brush movement drive unit 8 Sensors 9. Control Unit S1, S11 Holding process (step) S2, S12 Removal process (step) S13 Scrubber process (step) S31 Rough polishing process (step) S32 Fine grinding process (step) R1 Processing Area R2 Untreated area W substrate Wb main surface (second main surface)

Claims

1. a holding step of holding a substrate having a main surface on which unevenness defects exist; a removing step of removing at least a part of the unevenness defect by sliding a first brush against a treatment area of ​​the main surface of the substrate, the treatment area including the unevenness defect, while avoiding a non-treatment area of ​​the main surface of the substrate that does not include the unevenness defect, while supplying a treatment liquid to the main surface of the substrate; A substrate processing method comprising:

2. 2. The substrate processing method according to claim 1, The unevenness defect includes a deposit that is adhered to the main surface due to contact between the substrate and a member that supports or holds the substrate before the holding step, A substrate processing method, wherein in the removing step, the first brush including an abrasive polishes the processing area to remove at least a portion of the deposit.

3. 3. The substrate processing method according to claim 2, further comprising the steps of: The substrate processing method further includes a scrubbing step in which, after the removing step, a second brush not containing an abrasive is scrubbed against the processing area and the non-processing area of ​​the substrate while the processing liquid is supplied to the main surface of the substrate, thereby removing at least a portion of particles on the processing area and the non-processing area generated by the removing step.

4. 4. The substrate processing method according to claim 2, further comprising the steps of: The removing step includes: a rough polishing step of supplying the treatment liquid to the main surface of the substrate while sliding a first polishing brush containing an abrasive, which is the first brush, against the treatment area while avoiding the non-treatment area; a fine polishing step in which, after the rough polishing step, a second polishing brush containing abrasives finer than the abrasives of the first polishing brush is slid over the treatment area while avoiding the non-treatment area, while supplying the treatment liquid to the main surface of the substrate; A method for processing a substrate, comprising:

5. 4. A substrate processing method according to claim 1, further comprising the steps of: The substrate processing method further comprises, before the removing step, a setting step of setting the processing region based on position-related information relating to positions of the unevenness defects on the main surface of the substrate.

6. 6. The substrate processing method according to claim 5, A method of processing a substrate, comprising receiving the position related information from an external source.

7. 6. The substrate processing method according to claim 5, A method of processing a substrate, the method comprising: detecting the unevenness defects using a sensor to generate the position-related information.

8. a substrate holder for holding a substrate having a main surface on which uneven defects exist; a discharge unit including a nozzle that discharges a treatment liquid toward the main surface of the substrate held by the substrate holding unit; A first brush; A first brush movement drive unit that moves the first brush; a control unit that controls the substrate holding unit, the discharge unit, and the first brush movement drive unit to supply the processing liquid to the main surface of the substrate, while sliding the first brush against a processing region of the main surface that includes the unevenness defect, while avoiding a non-processing region of the main surface of the substrate that does not include the unevenness defect, thereby removing at least a portion of the unevenness defect; The substrate processing apparatus includes:

9. The substrate processing apparatus according to claim 8, A second brush; a second brush movement drive unit that moves the second brush; Further equipped with The first brush is an abrasive brush containing an abrasive material, The substrate processing apparatus, wherein the second brush is a non-abrasive brush that does not contain an abrasive material.

10. The substrate processing apparatus according to claim 9, The first brush is a first abrasive brush containing an abrasive material, The substrate processing apparatus includes: a second abrasive brush containing a finer abrasive than the abrasive of the first abrasive brush; a polishing brush movement drive unit that moves the second polishing brush; The substrate processing apparatus further comprises:

11. 11. The substrate processing apparatus according to claim 8, The substrate processing apparatus further comprises a sensor for detecting the unevenness defect on the main surface of the substrate.

Images