Surface light-emitting element and manufacturing method for surface light-emitting element

Abstract

To provide a surface light-emitting element, in which a light-emitting element unit has a constriction layer, capable of improving a degree of freedom of selecting a material of a layer of the light-emitting element unit other than the constriction layer.SOLUTION: A surface light-emitting element 10 is provided comprising a light-emitting element part LE including: a first structure including a first semiconductor structure SS1; a second structure laminated with the first structure and including a second semiconductor structure SS2; and a light-emitting layer 103 disposed between the first and second structures. The first structure and / or the second structure is provided therein with a constriction layer 104 that constricts, from between current and light, at least the current. The constriction layer has a second region 104a2 surrounding a first region 104a1 and having a higher resistance than the first region. The constriction layer has formed therein a first hole CH1 that surrounds the second region and where a solid layer or a gas layer is provided, a second hole where the first region is provided, or a third hole where the second region is provided.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device and a method for manufacturing the surface light emitting device. [Background technology]

[0002] 2. Description of the Related Art Conventionally, surface-emitting devices capable of obtaining surface-emitting output, such as surface-emitting lasers and light-emitting diodes, have been known.

[0003] Among conventional surface light emitting devices, there are some whose light emitting device section has a constriction layer that confines at least the current out of the current and the light (see, for example, Patent Documents 1 to 4). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 4-363082 [Patent Document 2] JP 2003-332684 A [Patent Document 3] JP 2004-207500 A [Patent Document 4] JP 2020-21879 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in conventional surface light emitting devices, there is room for improvement in terms of increasing the degree of freedom in the selection of materials for layers other than the constriction layer of the light emitting device portion.

[0006] Therefore, the main objective of the present technology is to provide a surface-emitting element having a light-emitting element portion having a constriction layer, which can improve the freedom of material selection for layers other than the constriction layer of the light-emitting element portion. [Means for solving the problem]

[0007] The present technology includes a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked with the first structure; a light-emitting layer disposed between the first and second structures; A light-emitting element portion including: a constriction layer that confines at least a current among a current and a light is provided in the first structure and / or the second structure; the narrowing layer has a second region surrounding the first region, the second region having a higher resistance than the first region; The narrowing layer includes: A first hole surrounding the second region, the first hole being provided with a solid or gas layer; or A second hole in which the first region is provided, or The surface light emitting device has a third hole formed therein in which the second region is provided. The second region may have a lower refractive index than the first region. The second region may include an insulating region. The narrowing layer may further include a third region at least partially surrounding the second region and having a higher resistance than the first region. The third region may include an ion-implanted region. The first hole or the second hole may be formed in the narrowing layer. The first region may include a compound semiconductor containing Al, and the second region may include an oxide containing Al. The first hole may be formed in the constriction layer, and a part of the second semiconductor structure or a part of the light emitting layer as the solid layer may enter the first hole. The second hole may be formed in the narrowing layer, and a part of the second semiconductor structure or a part of the light emitting layer may enter the second hole as the first region. The third hole may be formed in the narrowing layer. The first region may include a compound semiconductor. The second region may include a solid layer and / or a gas layer. The narrowing layer may have different conductivity types on the inner periphery side and the outer periphery side of the hole. The second semiconductor structure may have different conductivity types on a side corresponding to an inner periphery of the hole and a side corresponding to an outer periphery of the hole. At least one of the first and second semiconductor structures may include a semiconductor multilayer reflector in which high refractive index layers and low refractive index layers are alternately stacked. The low refractive index layer may be made of a compound semiconductor containing Al, and the Al composition of the compound semiconductor may be 0.8 or more. The semiconductor multilayer reflector may not have an oxidized region on the side. The light emitting element components may be provided in a plurality and aligned in an in-plane direction. The present technology includes a step of stacking at least a first semiconductor structure and a compound semiconductor layer on a substrate in this order; forming holes in the compound semiconductor layer; forming a differential resistance structure in the compound semiconductor layer, in which a low resistance region having a relatively low resistance is surrounded by a high resistance region having a relatively high resistance; disposing at least a second semiconductor structure on the compound semiconductor layer on which the different resistance structure is formed; The present invention provides a method for manufacturing a surface light emitting device, comprising the steps of: In the step of forming the different resistance structure, the compound semiconductor layer may be oxidized from a side surface of the compound semiconductor layer exposed to the hole. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Diagram 2] 1 is a plan view of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Diagram 3] 1 is a flowchart for explaining an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 4] 4A to 4C are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 1 of an embodiment of the present technology. [Diagram 5]5A and 5B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 6] 1A to 1C are cross-sectional views of steps in an example of a manufacturing method for a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 7] 11 is a cross-sectional view of a surface light emitting device according to Example 2 of an embodiment of the present technology. [Figure 8] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 3 of an embodiment of the present technology. [Figure 9] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 4 of an embodiment of the present technology. [Figure 10] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 5 of an embodiment of the present technology. [Figure 11] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 6 of an embodiment of the present technology. [Figure 12] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 7 of an embodiment of the present technology. [Figure 13] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 8 of an embodiment of the present technology. [Figure 14] FIG. 13 is a bottom view of a surface light emitting device according to Example 8 of an embodiment of the present technology. [Figure 15] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 9 of an embodiment of the present technology. [Figure 16] FIG. 13 is a plan view of a surface light emitting device according to Example 9 of an embodiment of the present technology. [Figure 17] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 9.5 of an embodiment of the present technology. [Figure 18] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 19] FIG. 15 is a plan view of a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 20] 13 is a flowchart for explaining an example of a manufacturing method of a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 21]21A and 21B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 22] 22A and 22B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 23] 23A and 23B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 24] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 11 of an embodiment of the present technology. [Diagram 25] FIG. 15 is a cross-sectional view of a surface light emitting device according to Example 12 of an embodiment of the present technology. [Figure 26] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. [Figure 27] FIG. 23 is a plan view of a surface light emitting device according to Example 13 of an embodiment of the present technology. [Figure 28] 13 is a flowchart for explaining an example of a manufacturing method of a surface light emitting device according to Example 13 of an embodiment of the present technology. [Figure 29] 29A and 29B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 13 of an embodiment of the present technology. [Diagram 30] 30A and 30B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 13 of an embodiment of the present technology. [Diagram 31] 31A and 31B are cross-sectional views of each step of an example of a manufacturing method for a surface light emitting device according to Example 13 of an embodiment of the present technology. [Diagram 32] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. [Diagram 33] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. [Diagram 34] FIG. 21 is a plan view of a surface light emitting device according to Example 15 of an embodiment of the present technology. [Diagram 35] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 16 of an embodiment of the present technology. [Diagram 36] FIG. 21 is a plan view of a surface light emitting device according to Example 16 of an embodiment of the present technology. [Figure 37] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 17 of an embodiment of the present technology. [Figure 38] FIG. 21 is a plan view of a surface light emitting device according to Example 17 of an embodiment of the present technology. [Figure 39] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 18 of an embodiment of the present technology. [Diagram 40] FIG. 13 is a cross-sectional view of a surface light emitting device according to a modified example of Example 5 of an embodiment of the present technology. [Diagram 41] FIG. 23 is a cross-sectional view of a surface light emitting device according to a modified example of Example 10 of an embodiment of the present technology. [Diagram 42] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 19 of an embodiment of the present technology. [Diagram 43] FIG. 21 is a plan view of a surface light emitting device according to Example 19 of an embodiment of the present technology. [Diagram 44] FIG. 23 is a cross-sectional view of a surface light emitting device according to Example 20 of an embodiment of the present technology. [Diagram 45] FIG. 23 is a plan view of a surface light emitting device according to Example 20 of an embodiment of the present technology. [Diagram 46] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 20.5 of an embodiment of the present technology. [Figure 47] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 20.6 of an embodiment of the present technology. [Figure 48] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 21 of an embodiment of the present technology. [Figure 49] FIG. 22 is a cross-sectional view of a surface light emitting device according to Example 22 of an embodiment of the present technology. [Figure 50] FIG. 23 is a cross-sectional view of a surface light emitting device according to Example 23 of an embodiment of the present technology. [Figure 51] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 24 of an embodiment of the present technology. [Figure 52] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 25 of an embodiment of the present technology. [Diagram 53] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 26 of an embodiment of the present technology. [Figure 54] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 27 of an embodiment of the present technology. [Figure 55] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 28 of an embodiment of the present technology. [Figure 56] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 29 of an embodiment of the present technology. [Figure 57] FIG. 30 is a cross-sectional view of a surface light emitting device according to Example 30 of an embodiment of the present technology. [Figure 58] FIG. 21 is a cross-sectional view of a surface light emitting device according to Example 31 of an embodiment of the present technology. [Figure 59] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 32 of an embodiment of the present technology. [Figure 60] FIG. 11 is a cross-sectional view of a surface light emitting device according to Example 33 of an embodiment of the present technology. [Figure 61] 61A and 61B are cross-sectional views of each process of a method for manufacturing a surface light emitting device according to a comparative example. [Figure 62] 62A and 62B are cross-sectional views of each process of a method for manufacturing a surface light emitting device according to a comparative example. [Figure 63] 5A to 5C are cross-sectional views of each process of a method for manufacturing a surface light emitting device according to a comparative example. [Figure 64] 1 is a diagram showing an example of application of a surface light emitting device according to Example 1 of an embodiment of the present technology to a distance measuring device. [Figure 65] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 66] FIG. 2 is an explanatory diagram showing an example of an installation position of a distance measuring device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] A preferred embodiment of the present technology will be described in detail below with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals to avoid repeated description. The embodiment described below shows a representative embodiment of the present technology, and the scope of the present technology is not narrowly interpreted by this. Even if it is described in this specification that the surface light emitting device and the method for manufacturing the surface light emitting device according to the present technology have multiple effects, the surface light emitting device and the method for manufacturing the surface light emitting device according to the present technology only need to have at least one effect. The effects described in this specification are merely examples and are not limited, and other effects may also be present.

[0010] The explanation will be given in the following order: 0. Introduction 1. Surface light emitting device according to Example 1 of an embodiment of the present technology 2. Surface light emitting device according to Example 2 of an embodiment of the present technology 3. Surface light emitting device according to Example 3 of an embodiment of the present technology 4. Surface light emitting device according to Example 4 of an embodiment of the present technology 5. Surface light emitting device according to Example 5 of an embodiment of the present technology 6. Surface light emitting device according to Example 6 of an embodiment of the present technology 7. Surface light emitting device according to Example 7 of an embodiment of the present technology 8. Surface light emitting device according to Example 8 of an embodiment of the present technology 9. Surface light emitting device according to Example 9 of an embodiment of the present technology 9.5. Surface light emitting device according to Example 9.5 of an embodiment of the present technology 10. Surface light emitting device according to Example 10 of an embodiment of the present technology 11. Surface light emitting device according to Example 11 of an embodiment of the present technology 12. Surface light emitting device according to Example 12 of an embodiment of the present technology 13. Surface light emitting device according to Example 13 of an embodiment of the present technology 14. Surface light emitting device according to Example 14 of an embodiment of the present technology 15. Surface light emitting device according to Example 15 of an embodiment of the present technology 16. Surface light emitting device according to Example 16 of an embodiment of the present technology 17. Surface light emitting device according to Example 17 of an embodiment of the present technology 18. Surface light emitting device according to Example 18 of an embodiment of the present technology 19. Surface light emitting device according to a modified example of Example 5 of an embodiment of the present technology 20. Surface light emitting device according to a modified example of Example 10 of an embodiment of the present technology 21. Surface light emitting device according to Example 19 of an embodiment of the present technology 22. Surface light emitting device according to Example 20 of an embodiment of the present technology 23. Surface light emitting device according to Example 20.5 of an embodiment of the present technology 24. Surface light emitting device according to Example 20.6 of an embodiment of the present technology 25. Surface light emitting device according to Example 21 of an embodiment of the present technology 26. Surface light emitting device according to Example 22 of an embodiment of the present technology 27. Surface light emitting device according to Example 23 of an embodiment of the present technology 28. Surface light emitting device according to Example 24 of an embodiment of the present technology 29. Surface light emitting device according to Example 25 of an embodiment of the present technology 30. Surface light emitting device according to Example 26 of an embodiment of the present technology 31. Surface light emitting device according to Example 27 of an embodiment of the present technology 32. Surface light emitting device according to Example 28 of an embodiment of the present technology 33. Surface light emitting device according to Example 29 of an embodiment of the present technology 34. Surface light emitting device according to Example 30 of an embodiment of the present technology 35. Surface light emitting device according to Example 31 of an embodiment of the present technology 36. Surface light emitting device according to Example 32 of an embodiment of the present technology 37. Surface light emitting device according to Example 33 of an embodiment of the present technology 38. Other variations of this technology 39. Application examples to electronic devices 40. Example of application of surface light emitting element to distance measuring device 41. Example of distance measuring device mounted on a moving object

[0011] <0. Introduction>

[0012] Among conventional surface-emitting elements (e.g., surface-emitting lasers, light-emitting diodes, etc.), there are some that have a constriction layer (e.g., a constriction layer having an oxidized constriction layer) in the light-emitting element portion, which constricts at least the current of the current and the light. For example, an oxidized layer used to generate an oxidized constriction layer is made of a material that is easily oxidized, such as AlAs. AlAs has a low refractive index. Therefore, it is easy to form a DBR (Distributed Bragg Reflector) with high reflectance using a small number of layers by using a pair with a large refractive index difference, such as a low refractive index layer made of AlAs and a high refractive index layer made of GaAs.

[0013] However, for example, if the DBR is made of a material (such as AlAs) with the same composition as the layer to be oxidized, the DBR material (such as AlAs) will also be unintentionally oxidized during the oxidation process, so in conventional technology, the DBR is formed using an alloy material such as AlGaAs that has a higher refractive index than AlAs but is less susceptible to oxidation. In other words, in conventional technology, there was room for improvement in terms of increasing the freedom of material selection for layers other than the constriction layer of the light emitting element section.

[0014] Therefore, after extensive research, the inventors succeeded in developing a surface-emitting device in which the light-emitting element portion includes a constriction layer having an oxidized constriction layer, and which can prevent unintentional oxidation of layers other than the constriction layer of the light-emitting element portion even if a material that is easily oxidized is used in the layers other than the constriction layer.

[0015] The inventors further investigated surface-emitting devices in which the constriction layer does not have an oxidized constriction layer, and as a result, invented a surface-emitting device related to the present technology as a surface-emitting device in which the light-emitting element portion has a constriction layer and which can improve the freedom of material selection for layers other than the constriction layer of the light-emitting element portion.

[0016] Hereinafter, some examples of an embodiment of a surface light emitting device according to the present technology will be described in detail with reference to the drawings. In the following, in the cross-sectional views of FIG. 1 and the like, the upper side will be referred to as "upper" and the lower side as "lower" as appropriate.

[0017] <1. Surface light emitting device according to Example 1 of one embodiment of the present technology> Fig. 1 is a cross-sectional view of a surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (top view) of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 2.

[0018] <Configuration of surface-emitting element> (Overall composition) A surface light emitting device 10 according to Example 1 of an embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Fig. 1 and Fig. 2. The surface light emitting device 10 is, for example, a surface emission type VCSEL. The surface light emitting device 10 is, for example, a VCSEL with a mesa-less structure.

[0019] The surface light emitting element 10 is driven by, for example, a driver (drive circuit). The driver includes, for example, a power supply and a transistor that controls the on / off of the power supply to the surface light emitting element 10.

[0020] The surface light emitting device 10 includes, as an example, a light emitting element portion LE including a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 stacked with the first structure ST1 and including a second semiconductor structure SS2, and a light emitting layer 103 disposed between the first and second structures ST1 and ST2. As an example, a constriction layer 104 that constricts current and light is provided in the second structure ST2.

[0021] Here, the shape of the light-emitting element unit LE in a plan view is circular (see FIG. 2), but is not limited to this and may be other shapes such as elliptical or polygonal.

[0022] As an example, the first structure ST1 further includes a substrate 101 arranged on the side opposite to the light emitting layer 103 side of the first semiconductor structure SS1. The surface light emitting element 10 emits laser light to the side opposite to the light emitting layer 103 side of the second structure ST2 (the front surface side (upper surface side) of the substrate 101). Hereinafter, the direction in which the first and second structures ST1 and ST2 are stacked (the up-down direction) is also referred to as the "stacking direction".

[0023] The first semiconductor structure SS1 includes a first semiconductor multilayer film reflector 102, for example.

[0024] The second semiconductor structure SS2 includes, for example, a second semiconductor multilayer reflector 105. For example, the second semiconductor multilayer reflector 105 has a different conductivity type from the first semiconductor multilayer reflector .

[0025] As an example, the constriction layer 104 is disposed between the light emitting layer 103 and the second semiconductor multilayer film reflector 105. The constriction layer 104 defines a light emitting region LA of the light emitting layer 103. The light emitting region LA is a region in the light emitting layer 103 into which a current is injected (current injection region) and which emits light.

[0026] That is, in the surface light emitting element 10, as an example, a first semiconductor multilayer reflector 102, a light emitting layer 103, a narrowing layer 104, and a second semiconductor multilayer reflector 105 are laminated in this order on a substrate 101. The positional relationship between the light emitting layer 103 and the narrowing layer 104 may be reversed.

[0027] In the surface-emitting device 10, the light-emitting layer 103 has a double heterostructure sandwiched in the stacking direction between first and second semiconductor multilayer film reflectors 102 and 105 of different conductivity types, and holes and electrons can be radiatively recombined in the light-emitting layer 103.

[0028] In the surface light emitting device 10, a resonator is formed including a light emitting layer 103 and first and second semiconductor multilayer film reflectors 102 and 105 that sandwich the light emitting layer 103 in the stacking direction.

[0029] As an example, a circular (e.g., ring-shaped) anode electrode 106 (p-side electrode) is provided on the surface (top surface) opposite the light-emitting layer 103 side of the second semiconductor structure SS2 (more specifically, the second semiconductor multilayer film reflector 105) so as to surround the light-emitting region LA of the light-emitting layer 103 in a planar view.

[0030] As an example, on the rear surface (lower surface) of the substrate 101, a solid cathode electrode 107 (n-side electrode) is provided.

[0031] As one example, the surface light emitting element 10 is mounted on a mounting board (eg, a drive board having a driver, a wiring board connected to the driver, etc.) with the junction up.

[0032] (substrate) The substrate 101 is, for example, a GaAs substrate (eg, an n-GaAs substrate).

[0033] (First semiconductor multilayer mirror) The first semiconductor multilayer reflector 102 (semiconductor DBR) is, for example, a semiconductor multilayer reflector doped with n-type impurities, which has low light absorption, high reflectance, and electrical conductivity. The multilayer reflector is also called a distributed Bragg reflector (DBR). The first semiconductor multilayer reflector 102 has a structure in which high-refractive index layers and low-refractive index layers having different refractive indices are alternately stacked with an optical thickness of ¼ of the emission wavelength. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The Al composition of the compound semiconductor is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The Al composition of the compound semiconductor is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. The Al composition of the low refractive index layer is 0.8 or more, and the Al composition of the high refractive index layer is 0.2 or less, so that the refractive index difference between the pair of low refractive index layer and high refractive index layer in the first semiconductor multilayer film reflector 102 can be sufficiently large, and high reflectance can be achieved with a small number of pairs. Examples of the n-type impurity (n-type dopant) include Si, Se, Ge, etc. The first semiconductor multilayer film reflector 102 is set to have a slightly higher reflectance than the second semiconductor multilayer film reflector 105.

[0034] It is preferable that the first semiconductor multilayer reflector 102 does not have an oxidized region on the side.

[0035] (Light Emitting Layer) The light emitting layer 103 is made of, for example, a compound semiconductor having a smaller band gap energy than the first and second semiconductor structures SS1 and SS2. The light emitting layer 103 is made of, for example, a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The light emitting layer 103 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The light emitting layer 103 is also called an "active layer." The light emitting layer 103 is preferably disposed at or near the antinode of a standing wave generated in the resonator.

[0036] (Second semiconductor multilayer mirror) The second semiconductor multilayer reflector 105 (semiconductor DBR) is, for example, a semiconductor multilayer reflector doped with p-type impurities, which has low light absorption, high reflectance, and electrical conductivity. The multilayer reflector is also called a distributed Bragg reflector (DBR). The second semiconductor multilayer reflector 105 has a structure in which high-refractive index layers and low-refractive index layers having different refractive indices are alternately stacked with an optical thickness of ¼ of the emission wavelength. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The Al composition of the compound semiconductor is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The Al composition of the compound semiconductor is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. By having the Al composition of the low refractive index layer be 0.8 or more and the Al composition of the high refractive index layer be 0.2 or less, the refractive index difference between the pair of low refractive index layer and high refractive index layer in the second semiconductor multilayer film reflector 105 can be made sufficiently large, and high reflectance can be achieved with a small number of pairs. Examples of the p-type impurity (p-type dopant) include Zn, Mg, Be, C, etc. There are.

[0037] The second semiconductor multilayer film reflector 105 preferably does not have an oxidized region on the side.

[0038] (anode electrode) The anode electrode 106 may be, for example, Au / Pt / Ti, etc. The anode electrode 106 is connected to the anode side of the driver.

[0039] (cathode electrode) The cathode electrode 107 may be, for example, Au / Ni / AuGe, etc. The cathode electrode 107 is connected to the cathode side of a driver.

[0040] (stenosis layer) The constriction layer 104 has, for example, a laminated structure (e.g., a three-layer structure) in which a plurality of layers (e.g., three) including the oxidized constriction layer 104a are laminated. More specifically, the constriction layer 104 includes, in addition to the oxidized constriction layer 104a (middle layer), a first layer 104b (lowest layer) arranged on the light emitting layer 103 side (lower side) of the oxidized constriction layer 104a, and a second layer 104c (uppermost layer) arranged on the opposite side (upper side) of the oxidized constriction layer 104a from the light emitting layer 103 side. The oxidized constriction layer 104a is preferably arranged at or near a node of a standing wave generated in the resonator.

[0041] The first and second layers 104b and 104c include, for example, a compound semiconductor (e.g., AlGaAs, GaAs, etc.) The Al composition of the compound semiconductor is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less.

[0042] The oxidized constriction layer 104a has, for example, a first region 104a1 which is a non-oxidized region, and a second region 104a2 which is an oxidized region (insulating region) surrounding the first region 104a1. Furthermore, the oxidized constriction layer 104a has, for example, a third region 104a3 which surrounds the second region 104a2.

[0043] The first region 104a1 corresponds to the light emitting region LA and functions as a current / light passing region. The first region 104a1 includes, for example, a compound semiconductor containing Al (e.g., AlGaAs, GaAs, etc.). The Al composition of the compound semiconductor is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less.

[0044] The second region 104a2 is, for example, a region that is circular (for example, ring-shaped) in plan view and surrounds the first region 104a1. The second region 104a2 has a higher resistance than the first region 104a1 and functions as a current confinement region. The second region 104a2 has a lower refractive index than the first region 104a1 and also functions as a light confinement region (light confinement region). The second region 104a2 is, for example, an oxide containing Al (for example, Al x O y etc.)

[0045] The third region 104a3 is, for example, a region that is circular (for example, ring-shaped) in plan view and surrounds the second region 104a2. The third region 104a3 has a higher resistance and a lower refractive index than the first region 104a1. The third region 104a3 includes, for example, an insulating region (oxidized region). More specifically, the third region 104a3 is, for example, an oxide containing Al (for example, Al x O y etc.)

[0046] In the narrowing layer 104, for example, a first hole CH1 is formed surrounding the second region 104a2, in which a solid layer is provided. In one example, the first hole CH1 is circular in plan view. The first hole CH1 may be continuous around the entire circumference, may have an interrupted portion, or may have a discontinuous portion. In one example, the first hole CH1 is a through hole penetrating the narrowing layer 104 in the stacking direction.

[0047] The first hole CH1 separates the second and third regions 104a2, 104a3. In other words, the first hole CH1 is the boundary between the second and third regions 104a2, 104a3. The first and second regions 104a1, 104a2 are provided on the inner periphery side of the first hole CH1, and the third region 104a3 is provided on the outer periphery side of the first hole CH1. The second and third regions 104a2, 104a3 all run around the first hole CH1. The outer periphery end of the second region 104a2 coincides with the inner periphery end of the first hole CH1. The inner periphery end of the third region 104a3 coincides with the outer periphery end of the first hole CH1.

[0048] A part of the second semiconductor structure SS2 (more specifically, a circular portion which is part 105a of second semiconductor multilayer film reflector 105) serving as the solid layer fits into first hole CH1. This causes a circular convex portion (part 105a) protruding from second semiconductor multilayer film reflector 105 to bite into narrowing layer 104, thereby suppressing damage such as peeling between second semiconductor multilayer film reflector 105 and narrowing layer 104.

[0049] <Operation of surface light emitting element> The operation of the surface light emitting device 10 will be described below. When a power supply voltage of the driver is applied to the surface light emitting device 10, a current from the anode side of the driver passes through the anode electrode 106 and the second semiconductor multilayer film reflector 105 in this order, is constricted by the constriction layer 104, and is injected into the light emitting region LA of the light emitting layer 103. At this time, the light emitting region LA emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 102 and 105 while being constricted by the constriction layer 104 and amplified by the light emitting layer 103, and when an oscillation condition is satisfied, it is emitted as a laser beam toward the front surface side of the substrate 101. The current injected into the light emitting region LA flows out to the cathode side of the driver through the first semiconductor multilayer film reflector 102, the substrate 101, and the cathode electrode 107 in this order.

[0050] <Manufacturing method of surface light emitting device> An example of a method for manufacturing the surface light emitting device 10 will be described below with reference to the flow chart of Fig. 3. The overall flow is as follows: first, a semiconductor manufacturing method using a semiconductor manufacturing apparatus is used to simultaneously produce a plurality of surface light emitting devices 10 on a single wafer (hereinafter, for convenience, referred to as "substrate 101"), which is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0051] In the first step S1, a first stack is generated (see FIG. 4A). Specifically, a first semiconductor multilayer reflector 102 (e.g., GaAs / AlAs DBR), a light emitting layer 103, and an oxidized layer 104S are stacked in this order on a substrate 101 as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition) to generate a first stack. The oxidized layer 104S is a layer that will be the material of the narrowing layer 104, and has a stacked structure in which, for example, three compound semiconductor layers 104aS, 104bS, and 104cS are stacked. The compound semiconductor layer 104aS is an intermediate layer (e.g., an AlAs layer) that will be the material of the oxidized narrowing layer 104a. The compound semiconductor layer 104bS is the bottom layer (e.g., a GaAs layer) that will be the material of the first layer 104b. The compound semiconductor layer 104cS is the uppermost layer (e.g., a GaAs layer) that will be the material of the second layer 104c. When the first stack is produced, the compound semiconductor raw materials include, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH3) gas, the donor impurity raw material includes, for example, disilane (Si2H6), and the acceptor impurity raw material includes, for example, carbon tetrabromide (CBr4).

[0052] In the next step S2, a first hole CH1 is formed in the first laminate (see FIG. 4B). Specifically, a resist pattern having a circular opening corresponding to the first hole CH1 is first formed on the first laminate by photolithography. Next, the first laminate is etched by dry etching or wet etching using the resist pattern as a mask. The etching depth here is set to, for example, until the light emitting layer 103 is exposed. After that, the resist pattern is removed.

[0053] In the next step S3, the narrowing layer 104 is formed (see FIG. 4C). Specifically, the first hole CH1 formed in the first stack is exposed to a high-temperature water vapor atmosphere, and the compound semiconductor layer 104aS (e.g., an AlAs layer) serving as an intermediate layer of the oxidized layer 104S is selectively oxidized by a predetermined distance from the inner and outer circumferential surfaces of the first hole CH1 (two opposing side surfaces of the compound semiconductor layer 104aS exposed to the first hole CH1). As a result, a second region 104a2 surrounding the first region 104a1 is formed on the inner circumferential side of the first hole CH1, and a third region 104a3 surrounding the second region 104a2 is formed on the outer circumferential side of the first hole CH1. Note that in the oxidation process of step S3, the first semiconductor multilayer film reflector 102 is not exposed to a high-temperature water vapor atmosphere, so that oxidation of the side portions of the first semiconductor multilayer film reflector 102 can be suppressed. Moreover, since the compound semiconductor layer 104bS, which is the material of the first layer 104b adjacent to the light emitting layer 103, is not oxidized and stress generation can be suppressed, it is possible to suppress damage to the light emitting layer 103. Furthermore, since the compound semiconductor layer 104cS, which is the material of the second layer 104c, is not oxidized, it is possible to suppress the occurrence of lattice defects in the second layer 104c.

[0054] In the next step S4, the second semiconductor structure SS2 is regrown (see FIG. 5A). Specifically, the second semiconductor multilayer reflector 105 (e.g., GaAs / AlAs DBR) is regrown on the upper surface of the first stack (the upper surface of the second layer 104c of the narrowing layer 104) to generate the second stack. Here, the second semiconductor multilayer reflector 105 containing a compound semiconductor (e.g., AlAs, GaAs) lattice-matched to GaAs is crystal-grown on the second layer 104c containing GaAs. At this time, a part 105a of the second semiconductor multilayer reflector 105 is formed in the first hole CH1. Note that the second semiconductor multilayer reflector 105 is formed after the narrowing layer 104 is formed (after the oxidation step), so that the side of the second semiconductor multilayer reflector 105 is not oxidized.

[0055] In the next step S5, the anode electrode 106 is formed on the second laminate (see FIG. 5B). Specifically, the anode electrode 106 is formed on the second semiconductor multilayer film reflector 105 so as to surround the light emitting region, for example, by a lift-off method. At this time, for example, deposition, sputtering, etc. are used to form a film of the electrode material.

[0056] In the final step S6, the cathode electrode 107 is formed on the second laminate (see FIG. 6). Specifically, the cathode electrode 107 is formed in a solid manner on the back surface of the substrate 101. At this time, for example, deposition, sputtering, or the like is used to form a film of the electrode material.

[0057] A method for manufacturing a surface-emitting device (VCSEL) according to a comparative example will be briefly described below with reference to FIGS. 61A to 63. FIG.

[0058] (Step 1) A stack is generated by stacking DBR1, active layer AL, oxidized layer BOL, and DBR2 in this order on substrate S (see FIG. 61A). The low refractive index layers of DBR1 and DBR2 contain compound semiconductors (e.g., AlGaAs, AlAs, etc.) with a high Al composition (e.g., 0.8 or more).

[0059] (Step 2) A mesa M is formed in the laminate by photolithography and etching (see FIG. 61B). (Step 3) The mesa M is exposed to a high-temperature water vapor atmosphere, and the side of the mesa M is selectively oxidized to form a constriction layer CL including an oxidized constriction layer (see FIG. 62A). At this time, an oxide OX is formed on each side of DBR1 and DBR2 (more specifically, on the side of the low refractive index layer). In this case, stress is generated in DBR1 and DBR2, making them more susceptible to breakage during mounting or operation. (Step 4) Anode electrode AE ​​is formed in a ring shape on the top of mesa M by lift-off method (see FIG. 62B). (Step 5) A cathode electrode CE is formed in a solid shape on the rear surface (lower surface) of the substrate S (see FIG. 63).

[0060] <Effects of surface light emitting device and method for manufacturing surface light emitting device> The effect of the surface light emitting device 10 will be described below. The surface light emitting device 10 includes a light emitting element portion LE including a first structure ST1 including a first semiconductor structure SS1 having a first semiconductor multilayer film reflector 102, a second structure ST2 including a second semiconductor structure SS2 having a second semiconductor multilayer film reflector 105 stacked with the first structure ST1, and a light emitting layer 103 disposed between the first and second structures ST1 and ST2. A constriction layer 104 for constricting current and light is provided in the first and second structures ST2. The constriction layer 104 includes a first region 104a1 and a second region 104a2 surrounding the first region 104a1, the second region 104a2 having a higher resistance than the first region 104a1. A first hole CH1 is formed in the constriction layer 104, surrounding the second region 104a2, in which a solid layer is provided.

[0061] In the surface light emitting element 10, since the first hole CH1 surrounding the second region 104a2 is formed in the narrowing layer 104, for example, the first hole CH1 can be exposed to a high-temperature water vapor atmosphere to form an oxidized region as the second region 104a2. At this time, since it is not necessary to expose the layers other than the narrowing layer 104 of the light emitting element portion LE (for example, the first and second semiconductor multilayer film reflectors 102, 105) to the high-temperature water vapor atmosphere, not only a material that is difficult to oxidize but also a material that is easily oxidized can be used for the layers other than the narrowing layer 104 of the light emitting element portion LE.

[0062] In other words, according to the surface-emitting element 10, it is possible to provide a surface-emitting element (e.g., a surface-emitting laser) in which the light-emitting element portion has a constriction layer and which can improve the freedom of material selection for layers other than the constriction layer of the light-emitting element portion.

[0063] Specifically, in the surface-emitting device 10, not only a material with a low Al composition that is difficult to oxidize (e.g., a compound semiconductor with an Al composition of 0.2 or less) but also a material with a high Al composition that is easily oxidized (e.g., a compound semiconductor with an Al composition of 0.8 or more) can be used for each of the first and second semiconductor structures SS1 and SS2. That is, the composition selectivity of the first and second semiconductor multilayer film reflectors 102 and 105 is improved. This means that it is possible to increase the difference in Al composition between each pair of the first and second semiconductor multilayer film reflectors 102 and 105 to increase the refractive index difference. This makes it possible to achieve a high reflectance or a desired reflectance with a small number of pairs.

[0064] The first and second semiconductor multilayer film reflectors 102 and 105 do not have oxidized regions on their sides, which makes it possible to prevent stress from being generated in the first and second semiconductor multilayer film reflectors 102 and 105, and therefore to prevent damage during mounting or operation.

[0065] Since the surface light emitting device 10 has a flat mesares structure, it is possible to prevent damage during the mounting process and deformation during the mesa pattern formation process, compared to a surface light emitting device having a mesa structure.

[0066] The second region 104a2 has a lower refractive index than the first region 104a1, which ensures that the light is constricted.

[0067] The second region 104a2 includes an insulating region (for example, an oxide region), which can reliably confine the current.

[0068] The narrowing layer 104 further includes a third region 104a3 at least partly surrounding the second region 104a2 and having a higher resistance than the first region 104a1, thereby making it possible to suppress current leakage.

[0069] The first region 104a1 includes a compound semiconductor containing Al, and the second region 104a2 includes an oxide containing Al, thereby forming the oxidized constriction layer 104a.

[0070] A part 105a of the second semiconductor multilayer film reflector 105 as a solid layer is inserted into the first hole CH1. This makes it possible to suppress peeling between the narrowing layer 104 and the second semiconductor multilayer film reflector 105.

[0071] A manufacturing method for the surface-emitting device 10 includes the steps of stacking, in this order, on a substrate 101, at least a first semiconductor structure SS1 including a first semiconductor multilayer reflector 102 and an oxidized layer 104S including an Al-containing compound semiconductor layer 104aS; forming a circumferential first hole CH1 in the oxidized layer 104S; forming second and third regions 104a2, 104a3, which are circumferential high-resistance regions along the first hole CH1, in the oxidized layer 104S; and stacking at least a second semiconductor structure SS2 including a second semiconductor multilayer reflector 105 on the constriction layer 104, which is the oxidized layer 104S in which the second and third regions 104a2, 104a3 are formed.

[0072] In the manufacturing method of the surface light emitting device 10, the first hole CH1 is formed in a circular shape in the oxidized layer 104S, and the first hole CH1 can be exposed to a high-temperature water vapor atmosphere to form an oxidized region as the second region 104a2. At this time, since it is not necessary to expose layers other than the narrowing layer 104 of the surface light emitting device 10 (for example, the first and second semiconductor multilayer film reflectors 102, 105) to the high-temperature water vapor atmosphere, not only a material that is difficult to oxidize but also a material that is easily oxidized can be used for the layers other than the narrowing layer 104 of the surface light emitting device 10.

[0073] That is, according to the method for manufacturing the surface light emitting device 10, a surface light emitting device having the constriction layer 104 and capable of improving the degree of freedom in selecting materials for layers other than the constriction layer 104 can be manufactured.

[0074] <2. Surface light emitting device according to Example 2 of one embodiment of the present technology> FIG. 7 is a cross-sectional view of a surface light emitting device 20 according to Example 2 of an embodiment of the present technology.

[0075] As shown in FIG. 7, the surface light emitting device 20 has a configuration generally similar to that of the surface light emitting device 10 of Example 1, except that the positional relationship between the light emitting layer 103 and the constriction layer 104 is reversed.

[0076] In the surface light emitting device 20, the narrowing layer 104 is provided in the first structure ST1. In the surface light emitting device 20, a circumferential portion which is a part 103a of the light emitting layer 103 laminated on the narrowing layer 104 enters the first hole CH1.

[0077] According to the surface light emitting device 20, the same effects as those of the surface light emitting device 10 according to the first embodiment are achieved.

[0078] <3. Surface light emitting device according to Example 3 of one embodiment of the present technology> FIG. 8 is a cross-sectional view of a surface light emitting device 30 according to Example 3 of an embodiment of the present technology.

[0079] As shown in FIG. 8, the surface light emitting device 30 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that the narrowing layer 104 does not have the first layer 104b.

[0080] In the surface light emitting device 30, the constriction layer 104 has a two-layer structure composed of an oxidized constriction layer 104a and a second layer 104c laminated on the oxidized constriction layer 104a. A first hole CH2, which is a circular through hole, is formed in the two-layer structure.

[0081] According to the surface light emitting device 30, it is possible to obtain substantially the same effects as the surface light emitting device 10 of Example 1, and since the number of layers of the confinement layer 104 is small, it is possible to obtain light emitting characteristics with reduced noise and less variation.

[0082] <4. Surface-emitting device according to Example 4 of one embodiment of the present technology> FIG. 9 is a cross-sectional view of a surface light emitting device 40 according to Example 4 of an embodiment of the present technology.

[0083] As shown in FIG. 9, the surface light emitting device 40 has a configuration generally similar to that of the surface light emitting device 10 of Example 1, except that the circular first hole CH3 formed in the constriction layer 104 is not a through hole.

[0084] The first hole CH3 has its bottom facing the upper surface of the first layer 104b of the confinement layer 104, and opens to the upper surface of the second layer 104c.

[0085] According to the surface-emitting device 40, it is possible to obtain effects roughly similar to those of the surface-emitting device 10 of Example 1, and since the light-emitting layer 103 is not exposed to the first hole CH3, the light-emitting layer 103 is not exposed to a high-temperature water vapor atmosphere during the oxidation process.

[0086] <5. Surface-emitting device according to Example 5 of one embodiment of the present technology> FIG. 10 is a cross-sectional view of a surface light emitting device 50 according to Example 5 of an embodiment of the present technology.

[0087] The surface light emitting device 50 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that an air layer is provided in the first hole CH1 formed in the narrowing layer 104, as shown in FIG.

[0088] In the surface light emitting device 50, the narrowing layer 104 in which the first hole CH1 is formed is bonded to the second semiconductor multilayer reflector 105. In Fig. 10, the symbol BI indicates the bonding interface between the narrowing layer 104 and the second semiconductor multilayer reflector 105. The narrowing layer 104 and the second semiconductor multilayer reflector 105 are bonded by, for example, semiconductor direct bonding (room temperature bonding).

[0089] In the surface-emitting element 50, the lower opening of the first hole CH1 is covered with the light-emitting layer 103, and the upper opening of the first hole CH1 is covered with the second semiconductor multilayer film reflector 105, thereby forming a circular air gap AG that serves as a gas layer.

[0090] According to the surface light emitting device 50, it is possible to obtain substantially the same effects as the surface light emitting device 10 according to the first embodiment, and since the first hole CH1 is insulated, it is possible to suppress current leakage.

[0091] <6. Surface-emitting device according to Example 6 of one embodiment of the present technology> FIG. 11 is a cross-sectional view of a surface light emitting device 60 according to Example 6 of an embodiment of the present technology.

[0092] As shown in FIG. 11, the surface light emitting device 60 has a configuration generally similar to that of the surface light emitting device 50 according to the fifth embodiment, except that the narrowing layer 104 is a single layer.

[0093] In the surface light emitting device 60, the constriction layer 104 has a first region 104A as a non-oxidized region, a second region 104B as an oxidized region surrounding the first region 104A, and a third region 104C as an oxidized region surrounding the second region 104B.

[0094] The first region 104A includes a compound semiconductor containing Al. The Al composition of the compound semiconductor is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0095] Each of the second and third regions 104B and 104C is made of an oxide containing Al (e.g., Al x O y ).

[0096] Here, a first hole CH4, which is a through hole penetrating the single-layer narrowing layer 104 in the stacking direction (vertical direction), is formed.

[0097] The surface light emitting device 60 has the same effects as the surface light emitting device 50 according to the fifth embodiment, and since the narrowing layer 104 is a single layer, it is possible to obtain light emitting characteristics with suppressed noise and minimal variation.

[0098] <7. Surface-emitting device according to Example 7 of one embodiment of the present technology> FIG. 12 is a cross-sectional view of a surface light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0099] The surface light emitting device 70 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that it is a back-emission type that emits light to the back side of the substrate 101, as shown in FIG.

[0100] The surface light emitting device 70 has substantially the same configuration as the surface light emitting device 10 according to Example 1 turned upside down. In the surface light emitting device 70, the anode electrode 106 is provided in a solid shape on the second semiconductor multilayer film reflector 105, and the cathode electrode 107 is provided in a circumferential shape (e.g., in a ring shape) on the back surface (emission surface) of the substrate 101 so as to surround the light emitting region of the light emitting layer 103 in a plan view. Here, the reflectance of the second semiconductor multilayer film reflector 105 is set to be slightly higher than the reflectance of the first semiconductor multilayer film reflector 102.

[0101] According to the surface light emitting device 70, it is possible to realize a back-emitting surface emitting laser that exhibits the same effects as the surface light emitting device 10 according to Example 1. Furthermore, since the surface light emitting device 70 has no oxide on the sides of the first and second semiconductor multilayer film reflectors 102 and 105, stress generation is suppressed, and therefore, there is an advantage that damage is suppressed even when the surface light emitting device 70 is mounted on a mounting board with the junction down.

[0102] <8. Surface-emitting device according to Example 8 of one embodiment of the present technology> Fig. 13 is a cross-sectional view of a surface light emitting device 80 according to Example 8 of an embodiment of the present technology. Fig. 14 is a bottom view (underside view) of the surface light emitting device 80 according to Example 8 of an embodiment of the present technology. Fig. 13 is a cross-sectional view taken along line 13-13 in Fig. 14.

[0103] 13 and 14, the surface light emitting device 80 has a configuration generally similar to that of the surface light emitting device 70 according to Example 7, except that the substrate 101 has an overhanging portion 101a extending to one side in the plane, and a cathode electrode 107 is provided on the surface (lower surface) of the overhanging portion 101a on the light emitting layer 103 side. Here, a lateral current path is formed in the substrate 101.

[0104] The surface light emitting device 80 has the same effects as the surface light emitting device 70 according to the seventh embodiment, and since the cathode electrode 107 is not provided on the emission surface, the optical effects (such as vignetting) caused by the cathode electrode 107 can be suppressed.

[0105] <9. Surface-emitting device according to Example 9 of one embodiment of the present technology> Fig. 15 is a cross-sectional view of a surface light emitting device 90 according to Example 9 of an embodiment of the present technology. Fig. 16 is a plan view of a surface light emitting device 90 according to Example 9 of an embodiment of the present technology. Fig. 15 is a cross-sectional view taken along line 15-15 in Fig. 16.

[0106] As shown in FIGS. 15 and 16, the surface light emitting device 90 has the same configuration as the surface light emitting device 10 according to the first embodiment, except that it has an intra-cavity structure in which the cathode electrode 107 is disposed within the resonator.

[0107] In the surface light emitting element 90, the substrate 101 has an overhanging portion 101a extending inward and outward, and the first semiconductor multilayer film reflector 102 has an overhanging portion 102a extending inward and outward. A cathode electrode 107 is provided on the surface (upper surface) of the overhanging portion 102a of the first semiconductor multilayer film reflector 102 facing the light emitting layer 103. Here, a lateral current path is formed in the first semiconductor multilayer film reflector 102.

[0108] According to the surface light emitting device 90, the same effects as those of the surface light emitting device 10 according to the first embodiment can be achieved, and the series resistance can be sufficiently reduced, and therefore, the power consumption can be sufficiently reduced.

[0109] <9.5. Surface-emitting device according to Example 9.5 of one embodiment of the present technology> FIG. 17 is a cross-sectional view of a surface light emitting device 95 according to Example 9.5 of an embodiment of the present technology.

[0110] The surface light emitting device 95 has a configuration generally similar to that of the surface light emitting device 90 of Example 9, except that the cathode electrode 107 is provided on the surface (upper surface) of the substrate 101 facing the light emitting layer 103, as shown in FIG.

[0111] In the surface light emitting element 95, only the substrate 101 has an overhanging portion 101a that extends outward in the plane, and a cathode electrode 107 is provided on the surface (upper surface) of the overhanging portion 101a on the side of the light emitting layer 103. Here, a lateral current path is formed in the substrate 101.

[0112] According to the surface light emitting device 95, the same effects as those of the surface light emitting device 10 according to the first embodiment can be achieved, and the series resistance can be reduced, leading to lower power consumption.

[0113] <10. Surface light emitting device according to Example 10 of one embodiment of the present technology> <Configuration of surface-emitting element> Fig. 18 is a cross-sectional view of a surface light emitting device 100 according to Example 10 of an embodiment of the present technology. Fig. 19 is a plan view of a surface light emitting device 100 according to Example 10 of an embodiment of the present technology. Fig. 18 is a cross-sectional view taken along line 18-18 in Fig. 19.

[0114] In the surface light emitting device 100, as shown in FIGS. 18 and 19, the constriction layer 104 does not have the first and third regions 101a1 and 101a3.

[0115] In the surface light emitting device 100, a second hole H1 (through hole) is formed in the narrowing layer 104, in place of the first hole CH1, in which a first region 105b (a region corresponding to a light emitting region) which is a part of the second semiconductor multilayer film reflector 105 is provided. That is, the first region 105b which is a part of the second semiconductor multilayer film reflector 105 is inserted into the second hole H1. Thus, in the surface light emitting device 100, the second semiconductor multilayer film reflector 105 has the first region 105b. Here, the first hole H1 is circular in plan view, but may be other shapes in plan view, such as an elliptical shape in plan view or a polygonal shape in plan view. The second hole H1 can also be said to be a hole surrounded by the second region 104a2.

[0116] <Manufacturing method of surface light emitting device> An example of a method for manufacturing the surface light emitting device 100 will be described below with reference to the flowchart in Fig. 20. The overall flow is as follows: first, a semiconductor manufacturing method using a semiconductor manufacturing apparatus is used to simultaneously produce a plurality of surface light emitting devices 100 on a single wafer (hereinafter, for convenience, referred to as "substrate 101") that is the base material of the substrate 101. Next, the series of the surface light emitting devices 100 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0117] In the first step S11, a first stack is generated (see FIG. 21A). Specifically, a first semiconductor multilayer reflector 102 (e.g., GaAs / AlAs DBR), a light emitting layer 103, and an oxidized layer 104S are stacked in this order on a substrate 101 as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition) to generate a first stack. The oxidized layer 104S is a layer that will be the material of the narrowing layer 104, and has a stacked structure in which, for example, three compound semiconductor layers 104aS, 104bS, and 104cS are stacked. The compound semiconductor layer 104aS is an intermediate layer (e.g., an AlAs layer) that will be the material of the oxidized narrowing layer 104a. The compound semiconductor layer 104bS is the bottom layer (e.g., a GaAs layer) that will be the material of the first layer 104b. The compound semiconductor layer 104cS is the uppermost layer (e.g., a GaAs layer) that will be the material of the second layer 104c. When the first stack is produced, the compound semiconductor raw materials include, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH3) gas, the donor impurity raw material includes, for example, disilane (Si2H6), and the acceptor impurity raw material includes, for example, carbon tetrabromide (CBr4).

[0118] In the next step S12, the second holes H1 are formed in the first laminate (see FIG. 21B). Specifically, a resist pattern having openings corresponding to the second holes H1 is first formed on the first laminate by photolithography. Next, the first laminate is etched by dry etching or wet etching using the resist pattern as a mask. The etching depth here is set to, for example, until the light emitting layer 103 is exposed. After that, the resist pattern is removed.

[0119] In the next step S13, the narrowing layer 104 is formed (see FIG. 22A). Specifically, the second hole H1 formed in the first laminate is exposed to a high-temperature water vapor atmosphere, and the compound semiconductor layer 104aS (e.g., an AlAs layer) as an intermediate layer of the oxidized layer 104S is selectively oxidized at a predetermined distance from the outer circumferential surface of the second hole H1 (the side surface of the compound semiconductor layer 104aS exposed to the second hole H1). As a result, the second region 104a2 is formed on the outer circumferential side of the second hole H1. Note that, in the oxidation process of step S13, the first semiconductor multilayer film reflector 102 is not exposed to a high-temperature water vapor atmosphere, so that the side portion of the first semiconductor multilayer film reflector 102 can be prevented from being oxidized. In addition, the compound semiconductor layer 104bS, which is the material of the first layer 104b adjacent to the light emitting layer 103, among the materials of the narrowing layer 104, is not oxidized, so that the generation of stress can be prevented, so that the light emitting layer 103 can be prevented from being damaged. Furthermore, since the compound semiconductor layer 104cS, which is the material of the second layer 104c, is not oxidized, the occurrence of lattice defects in the second layer 104c can be suppressed.

[0120] In the next step S14, the second semiconductor structure SS2 is regrown (see FIG. 22B). Specifically, the second semiconductor multilayer reflector 105 (e.g., GaAs / AlAs DBR) is regrown on the upper surface of the first stack (the upper surface of the second layer 104c of the narrowing layer 104) to generate the second stack. Here, the second semiconductor multilayer reflector 105 containing a compound semiconductor (e.g., AlAs, GaAs) lattice-matched to GaAs is crystal-grown on the second layer 104c containing GaAs. At this time, the first region 105b, which is a part of the second semiconductor multilayer reflector 105, is formed in the second hole H1. Note that the second semiconductor multilayer reflector 105 is formed after the narrowing layer 104 is formed (after the oxidation step), so that the side of the second semiconductor multilayer reflector 105 is not oxidized.

[0121] In the next step S15, the anode electrode 106 is formed on the second laminate (see FIG. 23A). Specifically, the anode electrode 106 is formed on the second semiconductor multilayer film reflector 105 by, for example, a lift-off method so as to surround the light emitting region of the light emitting layer 103. At this time, for example, deposition, sputtering, etc. are used to form a film of the electrode material.

[0122] In the final step S16, the cathode electrode 107 is formed on the second laminate (see FIG. 23B). Specifically, the cathode electrode 107 is formed in a solid manner on the back surface of the substrate 101. At this time, for example, deposition, sputtering, or the like is used to form a film of the electrode material.

[0123] <Effects of surface-emitting elements> The surface light emitting device 100 provides substantially the same effects as the surface light emitting device 10 according to Example 1. Note that a configuration similar to that of the surface light emitting device 100 can also be applied to a rear emission type device.

[0124] <11. Surface light emitting device according to Example 11 of an embodiment of the present technology> FIG. 24 is a cross-sectional view of a surface light emitting device 110 according to an eleventh example of an embodiment of the present technology.

[0125] As shown in FIG. 24, the surface light emitting device 110 has a configuration generally similar to that of the surface light emitting device 100 according to the tenth embodiment, except that the second hole H2 formed in the narrowing layer 104 is not a through hole.

[0126] The second hole H2 has its bottom facing the upper surface of the first layer 104b of the narrowing layer 104, and opens to the upper surface of the second layer 104c.

[0127] According to the surface-emitting device 110, it is possible to obtain effects roughly similar to those of the surface-emitting device 10 of Example 1, and since the light-emitting layer 103 is not exposed to the second hole H2, the light-emitting layer 103 is not exposed to a high-temperature water vapor atmosphere during the oxidation process.

[0128] <12. Surface light emitting device according to Example 12 of an embodiment of the present technology> FIG. 25 is a cross-sectional view of a surface light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0129] The surface-emitting device 120 has a configuration generally similar to that of the surface-emitting device 100 of Example 10, except that, as shown in FIG. 25, a compound semiconductor layer 115 is provided as a first region in a second hole H1, which is a through hole formed in the constriction layer 104.

[0130] The compound semiconductor layer 115 is an Al-containing compound semiconductor layer. The Al composition of the compound semiconductor layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less.

[0131] According to the surface-emitting device 120, it is possible to obtain effects generally similar to those of the surface-emitting device 10 of Example 1, and since the first region is composed of a single compound semiconductor layer 115, it is possible to obtain light-emitting characteristics with less noise and reduced variation.

[0132] <13. Surface light emitting device according to Example 13 of one embodiment of the present technology> <Configuration of surface-emitting element> Fig. 26 is a cross-sectional view of a surface light emitting device 130 according to Example 13 of an embodiment of the present technology. Fig. 27 is a plan view of a surface light emitting device 130 according to Example 13 of an embodiment of the present technology. Fig. 26 is a cross-sectional view taken along line 26-26 in Fig. 27.

[0133] The surface light emitting device 130 has a constriction layer 104 made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, GaAs, etc.), and has a first region 104A, a circular second region 104B surrounding the first region 104A, and a circular third region 104C surrounding the second region 104B. It is preferable that the outer peripheral edge of the third region 104C is exposed to the outside.

[0134] The second and third regions 104B, 104C each have a higher resistance than the first region 104A. The second and third regions 104B, 104C each include an ion-implanted region IIA (gray region in FIG. 26). The first region 104A is a non-ion-implanted region. The second and third regions 104B, 104C are separated by a first hole CH5, which is a circular through-hole formed in the constriction layer 104. The current confinement diameter is determined by the inner circumferential end (end on the inner circumferential side) of the second region 104B. Ion species in the ion-implanted region IIA include, for example, H+, B+, etc.

[0135] The confinement layer 104 and the second semiconductor multilayer reflector 105 are joined (at a joining interface BI). The first hole CH5 is closed by the light emitting layer 103 and the second semiconductor multilayer reflector 105 to form a circular air gap AG. The air gap AG functions as a light confinement region and an insulating region. The inner edge of the air gap AG defines the light confinement diameter. That is, in the surface light emitting element 130, the current confinement diameter and the light confinement diameter are different.

[0136] <Manufacturing method of surface light emitting device> An example of a method for manufacturing the surface light emitting device 130 will be described below with reference to the flowchart of Fig. 28. The overall flow is as follows: first, a semiconductor manufacturing method using a semiconductor manufacturing apparatus is used to simultaneously produce a plurality of surface light emitting devices 130 on a single wafer (hereinafter, for convenience, referred to as "substrate 101") that is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 130 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0137] In the first step S21, a first stack is generated (see FIG. 29A). Specifically, a first semiconductor multilayer reflector 102 (e.g., GaAs / AlAs DBR), a light emitting layer 103, and a compound semiconductor layer 104T are stacked in this order on a substrate 101 as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition) to generate the first stack. The compound semiconductor layer 104T is a layer (single layer) that will be the material of the narrowing layer 104. When generating the first stack, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn) and arsine (AsH3) gas are used as raw materials for the compound semiconductor, for example, disilane (Si2H6) is used as raw materials for the donor impurities, and for example, carbon tetrabromide (CBr4) is used as raw materials for the acceptor impurities.

[0138] In the next step S22, an ion implantation region IIA is formed (see FIG. 29B). Specifically, a resist is formed on the upper surface of the first stack (the upper surface of the compound semiconductor layer 104T) at a position corresponding to the first region 104A, and ions are implanted using the resist as a mask. The ion implantation depth at this time is set to, for example, until the bottom surface of the compound semiconductor layer 104T is reached. As a result, the ion implantation region IIA that defines the first region 104A is formed. After that, the resist is removed.

[0139] In the next step S23, a first hole CH5 is formed in the first laminate (see FIG. 30A). Specifically, first, a resist pattern having an opening corresponding to the first hole CH5 is formed on the first laminate by photolithography. Next, the first laminate is etched by dry etching or wet etching using the resist pattern as a mask. The etching depth here is set to, for example, until the light emitting layer 103 is exposed. As a result, the ion implantation region IIA is divided into second and third regions 104B and 104C by the first hole CH5. After that, the resist pattern is removed.

[0140] In the next step S24, a second semiconductor structure SS2 is bonded to the first stack (see FIG. 30B). Specifically, a second semiconductor multilayer reflector 105 (e.g., GaAs / AlAs DBR) is bonded, for example, by plasma bonding, to the top surface of the first stack in which the ion implantation region IIA and the first hole CH5 are formed (the top surface of the constriction layer 104) to generate a second stack.

[0141] In the next step S25, the anode electrode 106 is formed on the second laminate (see FIG. 31A). Specifically, the anode electrode 106 is formed in a circumferential shape on the second semiconductor multilayer film reflector 105 by, for example, a lift-off method so as to surround the light emitting region of the light emitting layer 103. At this time, for example, deposition, sputtering, etc. are used to form a film of the electrode material.

[0142] In the final step S26, the cathode electrode 107 is formed on the second laminate (see FIG. 31B). Specifically, the cathode electrode 107 is formed in a solid manner on the back surface of the substrate 101. At this time, for example, deposition, sputtering, or the like is used to form a film of the electrode material.

[0143] According to the surface light emitting device 130, the manufacturing process does not include an oxidation step, and thus the same effects as those of the surface light emitting device 10 according to the first embodiment can be achieved, and current leakage can be suppressed as much as possible.

[0144] <14. Surface light emitting device according to Example 14 of one embodiment of the present technology> FIG. 32 is a cross-sectional view of a surface light emitting device 140 according to Example 14 of an embodiment of the present technology.

[0145] The surface-emitting device 140 has a configuration similar to that of the surface-emitting device 130 of Example 13, except that, as shown in FIG. 32, the ion-implanted region IIA is provided across the constriction layer 104, the light-emitting layer 103, and the first semiconductor multilayer film reflector 102.

[0146] The surface light emitting device 140 has the same effects as the surface light emitting device 130 of Example 13, and can also perform current confinement over a wider range in the vertical direction, thereby improving the efficiency of current injection into the light emitting layer 103.

[0147] <15. Surface light emitting device according to Example 15 of an embodiment of the present technology> Fig. 33 is a cross-sectional view of a surface light emitting device 150 according to Example 15 of an embodiment of the present technology. Fig. 34 is a plan view of a surface light emitting device 150 according to Example 15 of an embodiment of the present technology. Fig. 33 is a cross-sectional view taken along line 33-33 in Fig. 34.

[0148] The surface-emitting device 150 has a similar configuration to the surface-emitting device 130 of Example 13, except that a circular third hole CH6 in which the second region 104B is provided is formed in the constriction layer 104, as shown in Figures 33 and 34.

[0149] In the surface light emitting device 150, the second region 104B surrounding the first region 104A is a circular air gap AG as a gas layer, and functions as a current / light confinement region. That is, in the surface light emitting device 150, the current confinement diameter and the light confinement diameter are the same. The circular third region 104C surrounding the second region 104B is an ion implantation region IIA, and functions as an insulating region (current leakage suppression region). It is preferable that the outer peripheral edge of the third region 104C is exposed to the outside.

[0150] The surface light emitting device 150 provides the same effects as the surface light emitting device 130 according to the thirteenth embodiment.

[0151] <16. Surface light emitting device according to Example 16 of an embodiment of the present technology> Fig. 35 is a cross-sectional view of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 36 is a plan view of a surface light emitting device 160 according to Example 16 of an embodiment of the present technology. Fig. 35 is a cross-sectional view taken along line 35-35 in Fig. 36.

[0152] As shown in Figures 35 and 36, the surface-emitting element 160 has a configuration generally similar to that of the surface-emitting element 140 of Example 14, except that the outer diameter of the circular third hole CH6 in which the second region 104B is provided is larger and that an ion-implanted region IIA as the third region 104C is not provided.

[0153] In the surface light emitting device 160, the second region 104B surrounding the first region 104A is a circumferential air gap AG as a gas layer, and functions as a current / light confinement region and an insulating region (current leakage suppression region).

[0154] The surface light emitting device 150 provides substantially the same effects as the surface light emitting device 130 according to the thirteenth embodiment.

[0155] <17. Surface light emitting device according to Example 17 of an embodiment of the present technology> Fig. 37 is a cross-sectional view of a surface light emitting device 170 according to Example 17 of an embodiment of the present technology. Fig. 38 is a plan view of a surface light emitting device 170 according to Example 17 of an embodiment of the present technology. Fig. 37 is a cross-sectional view taken along line 37-37 in Fig. 38.

[0156] As shown in FIGS. 37 and 38, in the surface light emitting element 170, a circular second hole H3 in which a first region 104A is provided is formed in the narrowing layer 104, and the first region 104A is surrounded by a circular second region 104B.

[0157] The first region 104A is made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, GaAs, etc.). The first region 104A is a non-ion-implanted region. The second region 104B is an ion-implanted region IIA (a gray region in FIG. 37) in which a compound semiconductor containing Al (e.g., AlGaAs, AlAs, GaAs, etc.) is ion-implanted.

[0158] The second region 104B has a higher resistance than the first region 104A. The current confinement diameter is determined by the inner circumferential end (the end on the inner circumferential side) of the second region 104B. Ion species in the ion implantation region IIA include, for example, H+, B+, and the like.

[0159] The narrowing layer 104 and the second semiconductor multilayer film reflector 105 are bonded together (bonding interface BI).

[0160] The surface light emitting device 170 exhibits the same effects as the surface light emitting device 10 according to the first embodiment, and has a high degree of freedom in selecting materials for the first region 104A and the second region 104B.

[0161] <18. Surface light emitting device according to Example 18 of an embodiment of the present technology> FIG. 39 is a cross-sectional view of a surface light emitting device 180 according to Example 18 of an embodiment of the present technology.

[0162] The surface-emitting device 180 has a configuration generally similar to that of the surface-emitting device 170 of Example 17, except that the constriction layer 104 further has a fourth region 104D located between the first and second regions 104A, 104B and the second semiconductor multilayer film reflector 105.

[0163] In the surface light emitting device 180, the first and fourth regions 104A and 104D form one compound semiconductor layer. The compound semiconductor layer includes, for example, AlGaAs, AlAs, GaAs, etc. The surface light emitting device 180 does not have a junction interface BI between the narrowing layer 104 and the second semiconductor multilayer film reflector 105.

[0164] The surface light emitting device 180 has the same effects as the surface light emitting device 170 of the seventeenth embodiment, and allows the second semiconductor multilayer film reflector 105 to be regrown on the constriction layer 104 during manufacturing.

[0165] <19. Surface light emitting device according to a modified example of Example 5 of an embodiment of the present technology> FIG. 40 is a cross-sectional view of a surface light emitting device 50-1 according to a modified example of Example 5 of an embodiment of the present technology.

[0166] The surface light emitting device 50-1 has the same configuration as the surface light emitting device 50 of Example 5, except that the outer peripheral end (end on the outer peripheral side) of the third region 104a3 of the confinement layer 104 is exposed to the outside.

[0167] In the surface light emitting device 50 of the fifth embodiment, oxidation is performed for a predetermined oxidation distance to obtain a desired oxidation constriction diameter, and as a result, the outermost portion of the third region 104a3 becomes a non-oxidized region (see FIG. 10). On the other hand, in the surface light emitting device 50-1, the oxidation distance is controlled so that the outermost portion of the third region 104a3 also becomes an oxidized region. Note that in the surface light emitting device 50-1, the diameter (width) of the element may be set to a length such that the outermost portion of the third region 104a3 also becomes an oxidized region according to the predetermined oxidation distance.

[0168] According to the surface light emitting device 50-1, the same effects as those of the surface light emitting device 50 according to the fifth embodiment can be achieved, and current leakage can be further suppressed.

[0169] <20. Surface light emitting device according to a modified example of Example 10 of an embodiment of the present technology> FIG. 41 is a cross-sectional view of a surface light emitting device 100-1 according to a modified example of Example 10 of an embodiment of the present technology.

[0170] The surface light emitting device 100-1 has a similar configuration to the surface light emitting device 100 of Example 10, except that the outer peripheral end (end on the outer peripheral side) of the second region 104a2 of the constriction layer 104 is exposed to the outside.

[0171] In the surface light emitting device 100 of Example 10, oxidation is performed for a predetermined oxidation distance to obtain a desired oxidation constriction diameter, and as a result, the outermost part of the second region 104a2 becomes a non-oxidized region (see FIG. 18). On the other hand, in the surface light emitting device 100-1, the oxidation distance is controlled so that the outermost part of the second region 104a2 also becomes an oxidized region. In the surface light emitting device 100-1, the diameter (width) of the element may be set to a length such that the outermost part of the second region 104a2 also becomes an oxidized region according to the predetermined oxidation distance.

[0172] According to the surface light emitting device 100-1, the same effects as those of the surface light emitting device 100 according to the tenth embodiment can be obtained, and current leakage can be further suppressed.

[0173] <21. Surface-emitting device according to Example 19 of an embodiment of the present technology> Fig. 42 is a cross-sectional view of a surface light emitting device 190 according to Example 19 of an embodiment of the present technology. Fig. 43 is a plan view of a surface light emitting device 190 according to Example 19 of an embodiment of the present technology. Fig. 42 is a cross-sectional view taken along line 42-42 in Fig. 43.

[0174] The surface light emitting device 190 has a configuration generally similar to that of the surface light emitting device 10 of Example 1, except that a plurality of light emitting device units LE (e.g., 12 units) are arranged in the in-plane direction as shown in Figures 42 and 43.

[0175] The surface light emitting element 190 has a light emitting element portion array LEA in which a plurality of light emitting element units LE are arranged two-dimensionally (for example, in a matrix array). Each light emitting element unit LE is of a surface emission type.

[0176] In the light-emitting element section array LEA, the first holes CH1 of two adjacent light-emitting element sections LE have an overlapping portion (shared portion).

[0177] In the surface light emitting element 190, a plurality of light emitting element sections LE share the first and second semiconductor multilayer film reflectors 102, 105. This allows a high degree of freedom in adjusting the pitch of the light emitting element sections LE. For example, the pitch of the light emitting element sections LE can be easily reduced.

[0178] In the surface light emitting device 190, the anode electrode 106 is provided in a frame shape on the second semiconductor multilayer film reflector 105 so as to surround the light emitting element section array LEA in a plan view, and the cathode electrode 107 is provided in a solid shape on the rear surface of the substrate 101. Since the second semiconductor multilayer film reflector 105 is shared by a plurality of light emitting element sections LE, it is possible to inject a current into each light emitting element section LE via the anode electrode 106. Furthermore, it is possible to lay out the light emitting element sections LE and the anode electrode 106 so as not to be close to each other, and it is possible to suppress optical effects (e.g., vignetting, etc.).

[0179] According to the surface light emitting device 190, it is possible to provide a surface light emitting device of a surface emission type capable of collectively driving a plurality of light emitting device units LE.

[0180] <22. Surface light emitting device according to Example 20 of one embodiment of the present technology> Fig. 44 is a cross-sectional view of a surface light emitting device 200 according to Example 20 of an embodiment of the present technology. Fig. 45 is a plan view of a surface light emitting device 200 according to Example 20 of an embodiment of the present technology. Fig. 44 is a cross-sectional view taken along line 44-44 in Fig. 45.

[0181] The surface light emitting device 200 has a configuration generally similar to that of the surface light emitting device 70 of Example 7, except that a plurality of light emitting device units LE (e.g., 12 units) are arranged in the in-plane direction as shown in Figures 44 and 45.

[0182] The surface light emitting device 200 has a light emitting device array LEA in which a plurality of light emitting device units LE are arranged two-dimensionally (for example, in a matrix array). Each light emitting device unit LE is of a rear emission type.

[0183] In the light-emitting element section array LEA, the first holes CH1 of two adjacent light-emitting element sections LE have an overlapping portion (shared portion).

[0184] In the surface light emitting element 200, a plurality of light emitting element sections LE share the first and second semiconductor multilayer film reflectors 102, 105. This allows a high degree of freedom in adjusting the pitch of the light emitting element sections LE. For example, the pitch of the light emitting element sections LE can be easily reduced.

[0185] In the surface light emitting element 200, the cathode electrode 107 is provided in a frame shape on the back surface (upper surface) of the substrate 101 so as to surround the light emitting element section array LEA in a plan view, and the anode electrode 106 is provided in a solid shape on the surface (lower surface) opposite to the light emitting layer 103 side of the second semiconductor multilayer film reflector 105. Since the substrate 101 is shared by a plurality of light emitting element sections LE, the current flowing in through the anode electrode 106 can be injected into each light emitting element section LE. Furthermore, the light emitting element sections LE and the cathode electrode 107 can be laid out so as not to be close to each other, and optical effects (e.g., vignetting, etc.) can be suppressed.

[0186] According to the surface light emitting device 200, it is possible to provide a rear emission type surface light emitting device capable of collectively driving a plurality of light emitting element units LE.

[0187] <23. Surface light emitting device according to Example 20.5 of one embodiment of the present technology> FIG. 46 is a cross-sectional view of a surface light emitting device 205 according to Example 20.5 of an embodiment of the present technology.

[0188] The surface-emitting element 205 has a configuration generally similar to that of the surface-emitting element 200 of Example 20, except that the conductivity type of the second semiconductor multilayer film reflector 105 is different between the area corresponding to the first region 104a1 of each light-emitting element portion LE and the surrounding area.

[0189] In the surface light emitting element 205, an anode electrode 106 is provided on the surface (lower surface) of the second semiconductor multilayer film reflector 105 opposite to the light emitting layer 103 side at a position corresponding to the first region 104a1 of each light emitting element unit LE. The regions between the corresponding anode electrodes 106 and the first regions 104a1 of the second semiconductor multilayer film reflector 105 are p-type regions, and the surrounding regions are n-type regions. This makes it possible to prevent a current flowing in through the anode electrode 106 in each light emitting element unit LE from flowing to an adjacent light emitting element unit LE.

[0190] According to the surface light emitting device 205, it is possible to provide a surface light emitting device of a rear emission type capable of independently driving a plurality of light emitting device units LE. Here, the rear emission type has been described as an example, but the same configuration as the surface light emitting device 205 can also be applied to a surface emission type (for example, the surface light emitting device 190 according to the nineteenth embodiment). <24. Surface light emitting device according to Example 20.6 of one embodiment of the present technology> FIG. 47 is a cross-sectional view of a surface light emitting device 206 according to Example 20.6 of an embodiment of the present technology.

[0191] The surface-emitting device 206 has a configuration generally similar to that of the surface-emitting device 200 of Example 20, except that an ion implantation region IIA is provided in a region of the second semiconductor multilayer film reflector 105 of each light-emitting device portion LE corresponding to the second region 104a2.

[0192] In the surface light emitting element 206, an anode electrode 106 is provided at a position corresponding to the first region 104a1 of each light emitting element unit LE on the surface (lower surface) opposite to the light emitting layer 103 side of the second semiconductor multilayer film reflector 105. The regions between the corresponding anode electrodes 106 and first regions 104a1 of the second semiconductor multilayer film reflector 105 are non-ion implantation regions, and the surrounding regions are ion implantation regions IIA. This makes it possible to prevent current flowing in through the anode electrode 106 in each light emitting element unit LE from flowing to an adjacent light emitting element unit LE.

[0193] According to the surface light emitting device 206, it is possible to provide a surface light emitting device of a rear emission type capable of independently driving a plurality of light emitting device units LE. Here, the rear emission type has been described as an example, but the same configuration as the surface light emitting device 206 can also be applied to a surface emission type (for example, the surface light emitting device 190 according to the nineteenth embodiment).

[0194] <25. Surface light emitting device according to Example 21 of one embodiment of the present technology> FIG. 48 is a cross-sectional view of a surface light emitting device 210 according to Example 21 of an embodiment of the present technology.

[0195] The surface light emitting device 210 has a configuration generally similar to that of the surface light emitting device 160 according to the sixteenth embodiment, except that it has a light emitting device portion array in which a plurality of light emitting device units LE are arranged in an in-plane direction.

[0196] In the surface light emitting element 210, the first holes CH1 of two adjacent light emitting element units LE of the light emitting element unit array LEA have an overlapping portion (shared portion).

[0197] According to the surface light emitting element 210, it is possible to provide a surface light emitting element of a surface emission type capable of collectively driving a plurality of light emitting element units LE. Here, the surface emission type has been described as an example, but a configuration similar to that of the surface light emitting element 210 can also be applied to a rear emission type.

[0198] <26. Surface light emitting device according to Example 22 of one embodiment of the present technology) FIG. 49 is a cross-sectional view of a surface light emitting device 220 according to Example 22 of an embodiment of the present technology.

[0199] As shown in FIG. 49, the surface light emitting element 220 has a configuration generally similar to that of the surface light emitting element 10 according to the first embodiment, except that the surface light emitting element 220 is a surface emission type light emitting diode (LED: Light Emitting Diode).

[0200] In the surface light emitting device 220, instead of the second semiconductor multilayer film reflector 105, a cladding layer 108 (for example, a p-AlGaAs layer) is provided.

[0201] In the surface-emitting element 220, a composite light of light emitted upward from the light-emitting layer 103 and light emitted downward from the light-emitting layer 103 and reflected by the first semiconductor multilayer film reflector 102 and the cathode electrode 107 is emitted to the surface side of the substrate 101.

[0202] According to the surface light emitting device 220, it is possible to provide a surface emission type high output LED that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0203] <27. Surface light emitting device according to Example 23 of one embodiment of the present technology) FIG. 50 is a cross-sectional view of a surface light emitting device 230 according to Example 23 of an embodiment of the present technology.

[0204] As shown in FIG. 50, the surface light emitting device 230 according to the twenty-third embodiment has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that the surface light emitting device 230 is a surface emission type light emitting diode (LED: Light Emitting Diode).

[0205] In the surface light emitting element 230, a cladding layer 108 (for example, a p-AlGaAs layer) is provided instead of the second semiconductor multilayer reflector 105, and a cladding layer 109 (for example, an n-AlGaAs layer) is provided instead of the first semiconductor multilayer reflector 102.

[0206] In the surface light emitting element 230 , light emitted upward from the light emitting layer 103 and light emitted downward from the light emitting layer 103 and reflected by the cathode electrode 107 are combined and emitted to the front surface side of the substrate 101 .

[0207] According to the surface light emitting device 230, it is possible to provide a surface emission type LED that exhibits the same effects as the surface light emitting device according to the first embodiment.

[0208] <28. Surface light emitting device according to Example 24 of one embodiment of the present technology) FIG. 51 is a cross-sectional view of a surface light emitting device 240 according to Example 24 of an embodiment of the present technology.

[0209] As shown in FIG. 51, the surface light emitting device 240 has a configuration generally similar to that of the surface light emitting device 70 according to the seventh embodiment, except that the surface light emitting device 240 is a back-emitting type light emitting diode (LED: Light Emitting Diode).

[0210] In the surface light emitting device 240, a cladding layer 109 (for example, an n-AlGaAs layer) is provided in place of the first semiconductor multilayer film reflector .

[0211] In the surface-emitting element 240, a composite light of light emitted upward from the light-emitting layer 103 and light emitted downward from the light-emitting layer 103 and reflected by the second semiconductor multilayer film reflector 105 and the anode electrode 106 is emitted to the back side of the substrate 101.

[0212] According to the surface light emitting device 240, it is possible to provide a high-output LED of a rear emission type that exhibits the same effects as the surface light emitting device 10 according to the first embodiment.

[0213] <29. Surface light emitting device according to Example 25 of one embodiment of the present technology) FIG. 52 is a cross-sectional view of a surface light emitting device 250 according to Example 25 of an embodiment of the present technology.

[0214] As shown in FIG. 52, the surface light emitting device 250 according to the twenty-third embodiment has a configuration generally similar to that of the surface light emitting device 70 according to the seventh embodiment, except that the surface light emitting device 250 is a back-emission type light emitting diode (LED: Light Emitting Diode).

[0215] In the surface light emitting element 250, a cladding layer 108 (e.g., a p-AlGaAs layer) is provided instead of the second semiconductor multilayer reflector 105, and a cladding layer 109 (e.g., an n-AlGaAs layer) is provided instead of the first semiconductor multilayer reflector 102.

[0216] In the surface light emitting element 250 , light emitted upward from the light emitting layer 103 and light emitted downward from the light emitting layer 103 and reflected by the anode electrode 106 are combined and emitted to the rear surface side of the substrate 101 .

[0217] According to the surface light emitting device 250, it is possible to provide a rear emission type LED that exhibits the same effects as the surface light emitting device according to the first embodiment.

[0218] <30. Surface light emitting device according to Example 26 of one embodiment of the present technology) FIG. 53 is a cross-sectional view of a surface light emitting device 260 according to Example 26 of an embodiment of the present technology.

[0219] As shown in FIG. 53, the surface light emitting device 260 has a configuration similar to that of the surface light emitting device 10 of Example 1, except that the narrowing layer 104 has different conductivity types on the inner and outer circumferential sides of the first hole CH1.

[0220] In the surface light emitting device 260, the narrowing layer 104 is, for example, a compound semiconductor layer containing Al, and has a first p-type region including the first region 104A, a second p-type region including a circular second region 104B surrounding the first region 104A, and an n-type region including a circular third region 104C surrounding the second region 104B. The first and second p-type regions are provided on the inner periphery side of the first hole CH1, and the n-type region is provided on the outer periphery side of the first hole CH1. The first p-type region is a highly doped region (dark gray part in FIG. 53) doped with a high concentration of p-type impurities. The second p-type region is a lightly doped region (light gray part in FIG. 53) doped with a low concentration of p-type impurities. That is, the first p-type region has a significantly lower resistance and a higher carrier conductivity than the second p-type region. Therefore, the first p-type region functions as a current passing region, and the second p-type region functions as a current confinement region. The n-type region is a region doped with n-type impurities and functions as a current leakage suppression region.

[0221] According to the surface light emitting device 260, the same effects as those of the surface light emitting device 10 according to the first embodiment can be achieved, and current leakage can be suppressed.

[0222] <31. Surface light emitting device according to Example 27 of one embodiment of the present technology) FIG. 54 is a cross-sectional view of a surface light emitting device 270 according to Example 27 of an embodiment of the present technology.

[0223] As shown in FIG. 54, the surface-emitting device 270 has a configuration similar to that of the surface-emitting device 260 of Example 26, except that the second semiconductor multilayer film reflector 105 also has different conductivity types on the side corresponding to the inner periphery of the first hole CH1 and the side corresponding to the outer periphery of the first hole CH1.

[0224] The first p-type region includes a region corresponding to the first region 104A of the second semiconductor multilayer film reflector 105. The second p-type region includes a region corresponding to the second region 104B of the second semiconductor multilayer film reflector 105. The n-type region includes a region corresponding to the third region 104C of the second semiconductor multilayer film reflector 105 and a region between the second region 104B and the third region 104C of the second semiconductor multilayer film reflector 105.

[0225] According to the surface light emitting device 260, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and current leakage can be further suppressed.

[0226] <32. Surface light emitting device according to Example 28 of one embodiment of the present technology) FIG. 55 is a cross-sectional view of a surface light emitting device 280 according to Example 28 of an embodiment of the present technology.

[0227] As shown in FIG. 55, the surface light emitting device 280 has a configuration generally similar to that of the surface light emitting device 100 according to the tenth embodiment, except that the narrowing layer 104 does not have the first layer 104b.

[0228] In the surface light emitting device 280, the constriction layer 104 has a two-layer structure composed of an oxidized constriction layer 104a and a second layer 104c laminated on the oxidized constriction layer 104a. A second hole H10, which is a circular through hole, is formed in the two-layer structure.

[0229] According to the surface light emitting device 280, it is possible to obtain effects roughly similar to those of the surface light emitting device 100 of Example 10, and since the number of layers of the confinement layer 104 is small, it is possible to obtain light emitting characteristics with reduced noise and less variation.

[0230] <33. Surface light emitting device according to Example 29 of one embodiment of the present technology) FIG. 56 is a cross-sectional view of a surface light emitting device 290 according to Example 29 of an embodiment of the present technology.

[0231] The surface light emitting device 290 has a similar configuration to the surface light emitting device 160 according to Example 16 (see FIG. 35), except that an insulating film IF is provided in the first hole CH6 as shown in FIG. 56. The insulating film IF is made of an insulator such as SiO2, SiN, SiON, or Al2O3.

[0232] According to the surface light emitting device 290, the same effects as those of the surface light emitting device 160 according to the sixteenth embodiment are achieved.

[0233] <34. Surface light emitting device according to Example 30 of one embodiment of the present technology) FIG. 57 is a cross-sectional view of a surface light emitting device 300 according to Example 30 of an embodiment of the present technology.

[0234] As shown in FIG. 57, the surface-emitting device 300 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that an ion-implanted region IIA is provided in the first hole CH1 to increase the resistance of a portion 105a of the second semiconductor multilayer reflector 105 and the outermost peripheral portion (non-oxidized region) of the oxidized constriction layer 104a.

[0235] The ion implantation region IIA is provided at least in the second semiconductor multilayer film reflector 105 and the constriction layer 104 so as to surround the light emitting region LA in a plan view. Here, the anode electrode 106 is provided so that at least a portion of it is located on a region (non-ion implantation region) of the second semiconductor multilayer film reflector 105 surrounded by the ion implantation region IIA.

[0236] According to the surface light emitting device 300, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and current leakage can be sufficiently suppressed.

[0237] <35. Surface light emitting device according to Example 31 of an embodiment of the present technology) FIG. 58 is a cross-sectional view of a surface light emitting device 310 according to Example 31 of an embodiment of the present technology.

[0238] As shown in FIG. 58, the surface-emitting device 310 has a configuration generally similar to that of the surface-emitting device 100 of Example 10, except that an ion-implanted region IIA is provided to increase the resistance of the outermost peripheral portion (non-oxidized region) of the second region 104a2.

[0239] The ion implantation region IIA is provided at least in the second semiconductor multilayer film reflector 105 and the constriction layer 104 so as to surround the light emitting region LA in a plan view. Here, the anode electrode 106 is provided so that at least a portion of it is located on a region of the second semiconductor multilayer film reflector 105 surrounded by the ion implantation region IIA (non-ion implantation region).

[0240] According to the surface light emitting device 310, the same effects as those of the surface light emitting device 100 according to the tenth embodiment can be obtained, and current leakage can be sufficiently suppressed. Note that a configuration similar to that of the surface light emitting device 310 can also be applied to a rear emission type.

[0241] <36. Surface light emitting device according to Example 32 of an embodiment of the present technology) FIG. 59 is a cross-sectional view of a surface light emitting device 320 according to Example 32 of an embodiment of the present technology.

[0242] As shown in FIG. 59, the surface-emitting device 320 has a configuration generally similar to that of the surface-emitting device 70 of Example 7, except that an ion-implanted region IIA is provided in the first hole CH1 to increase the resistance of a portion 105a of the second semiconductor multilayer reflector 105 and the outermost peripheral portion (non-oxidized region) of the oxidized constriction layer 104a.

[0243] The ion implantation region IIA is provided in at least the second semiconductor multilayer film reflector 105 and the confinement layer 104 so as to surround the light emitting region in a plan view.

[0244] The surface light emitting device 320 has the same effects as the surface light emitting device 70 according to the seventh embodiment, and can sufficiently suppress current leakage.

[0245] <37. Surface light emitting device according to Example 33 of an embodiment of the present technology> FIG. 60 is a cross-sectional view of a surface light emitting device 330 according to Example 33 of an embodiment of the present technology.

[0246] As shown in FIG. 60, the surface light emitting device 330 has a configuration generally similar to that of the surface light emitting device 100 of Example 10, except that the positional relationship between the light emitting layer 103 and the constriction layer 104 is reversed.

[0247] In the surface light emitting device 330, the narrowing layer 104 is provided in the first structure ST1. In the surface light emitting device 330, a part 103a of the light emitting layer 103 laminated on the narrowing layer 104 enters the first hole H1.

[0248] According to the surface light emitting device 330, the same effects as those of the surface light emitting device 100 according to the tenth embodiment are achieved.

[0249] <38. Other Modifications of the Present Technology> The present technology is not limited to the examples and modifications of the above embodiment, and may be modified as appropriate. For example, the constriction layer 104 may be provided in the first semiconductor structure SS1 and / or the second semiconductor structure SS2. For example, a plurality of constriction layers 104 may be provided in the light-emitting element portion LE. For example, the constriction layer 104 may be composed of four or more layers.

[0250] The present technology is also applicable to a surface light emitting device having a multi-junction structure including a plurality of light emitting layers stacked on top of each other. The surface light emitting device may be provided with at least one tunnel junction layer as necessary.

[0251] In the example in which the hole formed in the narrowing layer 104 is blocked to form the air gap AG, the hole may be provided with an insulating film made of an insulator such as SiO2, SiN, SiON, Al2O3, etc. In this case, the air gap AG may be filled with the insulating film.

[0252] For example, the surface light emitting device may have a contact layer (highly doped layer) where the first semiconductor structure SS1 and / or the second semiconductor structure SS2 are in contact with an electrode.

[0253] For example, in the surface light emitting device, the first semiconductor structure SS1 and / or the second semiconductor structure SS2 may have a cladding layer (spacer layer) disposed between the semiconductor multilayer film reflector and the light emitting layer.

[0254] In the above embodiments and modifications, a GaAs-based (material system lattice-matched to GaAs) surface-emitting device has been described, but the present technology is not limited thereto and can be applied to, for example, InP-based, GaN-based, and other surface-emitting devices. For example, in the case of an InP-based device, the semiconductor multilayer reflector may include AlGaInAs, or may be InP / AlGaInAs, AlInAs / AlGaInAs, and the like. The light-emitting layer may be, for example, an AlGaInAs / AlGaInAs multiple quantum well layer.

[0255] That is, materials that emit light at any wavelength within the wavelength range of 200 to 2000 nm can be used for the surface light emitting device.

[0256] At least one of the first and second structures ST1, ST2 is not limited to a semiconductor multilayer film reflector, and may in fact have a reflector made of one or a combination of two or more materials selected from semiconductors, dielectrics, and metals.

[0257] In the surface light emitting devices according to the above embodiments and modifications, the conductivity types (p-type and n-type) of the first and second semiconductor structures may be reversed. In this case, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0258] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0259] In each of the above-described embodiments and modifications, the material, conductivity type, thickness, width, value, shape, size, etc. of each layer constituting the surface light emitting device can be appropriately changed within the range in which the surface light emitting device functions.

[0260] <39. Application examples to electronic devices> The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, a robot, or a low-power consumption device (for example, a smartphone, a smart watch, a tablet, a mouse, etc.).

[0261] The surface light emitting device according to the present technology can also be used as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0262] <40. Example of application of surface light emitting element to distance measuring device> An application example of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described below.

[0263] 64 shows an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a surface light emitting element 10, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject SU by a TOF (Time Of Flight) method. The distance measurement device 1000 includes a surface light emitting element 10. The distance measurement device 1000 includes, for example, the surface light emitting element 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0264] The light receiving device 125 receives light emitted from the surface light emitting device 10 and reflected by the subject SU (object). That is, the light receiving device 125 detects the light reflected by the subject SU. The lens 128 is a lens for converting the light emitted from the surface light emitting device 10 into parallel light, for example, a collimator lens. The lens 138 is a lens for collecting the light reflected by the subject SU and guiding it to the light receiving device 125, for example, a collecting lens.

[0265] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a Time to Digital Converter (TDC). The reference signal may be a signal input from the control unit 155, or may be an output signal of a detection unit that directly detects the output of the surface light emitting device 10. The control unit 155 is, for example, a processor that controls the surface light emitting device 10, the light receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject SU based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject SU and outputs it to the display unit 165. The display unit 165 displays information about the distance to the subject SU based on the video signal input from the control unit 155. The control unit 155 stores information about the distance to the subject SU in the storage unit 175.

[0266] In this application example, instead of the surface-emitting element 10, any of surface-emitting elements 20, 30, 40, 50, 50-1, 60, 70, 80, 90, 95, 100, 100-1, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 205, 206, 210, 220, 230, 240, 250, 260, 270, 280, 290, 300, 310, 320, and 330 can also be applied to the distance measurement device 1000.

[0267] <41. Example of distance measuring device installed on a moving object> FIG. 65 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology of the present disclosure can be applied.

[0268] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 65, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0269] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0270] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0271] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-mentioned distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object (subject SU) outside the vehicle, and acquires distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing of people, cars, obstacles, signs, etc. based on the acquired distance data.

[0272] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0273] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0274] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0275] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0276] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 65, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0277] FIG. 66 is a diagram showing an example of the installation position of the distance measuring device 12031.

[0278] In FIG. 66, a vehicle 12100 has distance measuring devices 12101, 12102, 12103, 12104, and 12105 as a distance measuring device 12031.

[0279] The distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and upper part of the windshield inside the vehicle cabin of the vehicle 12100. The distance measuring device 12101 provided at the front nose and the distance measuring device 12105 provided at the upper part of the windshield inside the vehicle cabin mainly obtain data of the front of the vehicle 12100. The distance measuring devices 12102 and 12103 provided at the side mirrors mainly obtain data of the sides of the vehicle 12100. The distance measuring device 12104 provided at the rear bumper or back door mainly obtains data of the rear of the vehicle 12100. The front data obtained by the distance measuring devices 12101 and 12105 is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, and the like.

[0280] 66 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0281] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that runs autonomously without relying on the driver's operation.

[0282] For example, the microcomputer 12051 controls the distance measuring devices 12101 to 1210 Based on the distance data obtained from the microcomputer 12051, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0283] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the distance measuring device 12031 of the configurations described above.

[0284] The present technology can also be configured as follows. (1) a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked with the first structure; a light emitting layer disposed between the first and second structures; A light-emitting element portion including: a constriction layer that confines at least a current among a current and a light is provided in the first structure and / or the second structure; the narrowing layer has a second region surrounding the first region, the second region having a higher resistance than the first region; The narrowing layer includes: A first hole surrounding the second region, the first hole being provided with a solid or gas layer; or The first region is provided; or A surface light emitting device having a third hole in which the second region is provided. (2) The surface light emitting device according to (1), wherein the second region has a lower refractive index than the first region. (3) The surface light emitting device according to (1) or (2), wherein the second region includes an insulating region. (4) The surface-emitting device according to any one of (1) to (3), wherein the narrowing layer further includes a third region at least partially surrounding the second region and having a higher resistance than the first region. (5) The surface light emitting device according to (4), wherein the third region includes an ion implantation region. (6) The surface-emitting device according to any one of (1) to (5), wherein a first hole or a second hole is formed in the narrowing layer. (7) The first region includes a compound semiconductor containing Al, The surface light emitting device according to any one of (1) to (6), wherein the second region contains an oxide containing Al. (8) The first hole is formed in the narrowing layer, The surface light emitting device according to any one of (1) to (7), wherein a part of the second semiconductor structure or the light emitting layer serving as the solid layer is embedded in the first hole. (9) The second hole is formed in the narrowing layer, The surface light emitting device according to any one of (1) to (7), wherein a part of the second semiconductor structure or the light emitting layer, which serves as the first region, enters the second hole. (10) The surface-emitting device according to any one of (1) to (9), wherein the third hole is formed in the narrowing layer. (11) The surface light emitting device according to (10), wherein the first region includes a compound semiconductor. (12) The surface light emitting device according to (10) or (11), wherein the second region includes a solid layer and / or a gas layer. (13) The surface light emitting device according to any one of (1) to (12), wherein the narrowing layer has different conductivity types on the inner periphery side and the outer periphery side of the hole. (14) The surface-emitting device according to any one of (1) to (13), wherein the second semiconductor structure has different conductivity types on a side corresponding to an inner periphery of the hole and a side corresponding to an outer periphery of the hole. (15) The surface-emitting device according to any one of (1) to (14), wherein at least one of the first and second semiconductor structures includes a semiconductor multilayer film reflector in which high-refractive index layers and low-refractive index layers are alternately stacked. (16) The low refractive index layer includes a compound semiconductor containing Al, The surface light emitting device according to (15), wherein the compound semiconductor has an Al composition of 0.8 or more. (17) The surface-emitting device according to (16), wherein the semiconductor multilayer film reflector does not have an oxidized region on the side. (18) The surface light emitting device according to (1), wherein a plurality of the light emitting element components are arranged in an in-plane direction. (19) depositing at least a first semiconductor structure and a compound semiconductor layer on a substrate, in that order; forming holes in the compound semiconductor layer; forming a differential resistance structure in the compound semiconductor layer, in which a first region is surrounded by a second region having a higher resistance than the first region; disposing at least a second semiconductor structure on the compound semiconductor layer on which the different resistance structure is formed; A method for manufacturing a surface light emitting device, comprising: (20) The surface light emitting device according to (19), wherein in the step of forming the different resistance structure, the compound semiconductor layer is oxidized from a side surface of the compound semiconductor layer exposed to the hole. (21) The method for manufacturing a surface light emitting device according to (19) or (20), wherein the different resistance structure is such that the second region is surrounded by a third region having a higher resistance than the first region. (22) The hole is circumferential, The method for manufacturing a surface light emitting device according to any one of (19) to (21), wherein the different resistance structure has the first and second regions on an inner periphery side of the hole. (23) The method for manufacturing a surface light emitting device according to any one of (19) to (21), wherein the different resistance structure has the first region on the inner periphery side of the hole and the second region on the outer periphery side of the hole. (24) The hole is circumferential, The method for manufacturing a surface light emitting device according to any one of (19) to (21), wherein the different resistance structure has the first region on the inner periphery side of the hole and has the second region in the hole. (25) The hole is circumferential, The method for manufacturing a surface light emitting device according to any one of (19) to (21), wherein the different resistance structure has the first region on an inner periphery side of the hole and has the second region in the hole. (26) The method for producing a surface light emitting device according to any one of (19) to (25), wherein the different resistance structure has a third region having a higher resistance than the first region on an outer periphery of the hole. [Explanation of symbols]

[0285] 10, 20, 30, 40, 50, 50-1, 60, 70, 80, 90, 95, 100, 100-1, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 205, 206, 210, 220, 230, 240, 250, 260, 270, 280, 290, 300, 310, 320, 330: Surface-emitting element 101: Substrate 102: First semiconductor multilayer mirror 103: Light-emitting layer 103a: Part of the light-emitting layer 104: Constriction layer 104a1, 104A, 105b: 1st area 104a2, 104B: 2nd area 104a3, 104C: Third area 105: Second semiconductor multilayer mirror 105a: Part of the second semiconductor multilayer mirror (solid layer, part of the second semiconductor structure) LE: Light emitting element ST1: 1st structure ST2: Second structure SS1: First semiconductor structure SS2: Second semiconductor structure CH1, CH2, CH3, CH4, CH5, CH6: 1st hole H1, H2, H3, H10: 2nd hole CH6: 3rd hole 1S: 1st structure 2S:Second structure 3S: Third structure SS1: First semiconductor structure SS2: Second semiconductor structure AG: Air gap IF: Insulating film (solid layer) IIA: Ion implantation region

Claims

1. a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked with the first structure; a light emitting layer disposed between the first and second structures; A light-emitting element portion including: a confinement layer that confines at least a current among a current and light is provided in the first structure and / or the second structure; the narrowing layer has a second region surrounding the first region, the second region having a higher resistance than the first region; The narrowing layer includes: A first hole surrounding the second region, the first hole being provided with a solid or gas layer; or A second hole in which the first region is provided, or A surface light emitting device having a third hole in which the second region is provided.

2. The surface-emitting device according to claim 1 , wherein the second region has a lower refractive index than the first region.

3. The surface-emitting device according to claim 1 , wherein the second region includes an insulating region.

4. The surface light emitting device according to claim 1 , wherein the narrowing layer further comprises a third region at least partially surrounding the second region and having a higher resistance than the first region.

5. The surface light emitting device according to claim 4 , wherein the second region and / or the third region includes an ion-implanted region.

6. The surface light emitting device according to claim 1 , wherein the first hole or the second hole is formed in the narrowing layer.

7. the first region includes a compound semiconductor containing Al, The surface light emitting element according to claim 6 , wherein the second region includes an oxide containing Al.

8. The first hole is formed in the narrowing layer, The surface light emitting device according to claim 6 , wherein a part of the second semiconductor structure or a part of the light emitting layer as the solid layer is embedded in the first hole.

9. The second hole is formed in the narrowing layer, The surface light emitting device according to claim 6 , wherein a part of the second semiconductor structure or a part of the light emitting layer as the first region is inserted into the second hole.

10. The surface light emitting device according to claim 1 , wherein the third hole is formed in the narrowing layer.

11. The surface-emitting device according to claim 10 , wherein the first region comprises a compound semiconductor.

12. The surface-emitting device according to claim 11 , wherein the second region comprises a solid layer and / or a gas layer.

13. The surface light emitting device according to claim 1 , wherein the narrowing layer has different conductivity types on an inner periphery side and an outer periphery side of the hole.

14. The surface light emitting device according to claim 13 , wherein the second semiconductor structure has a different conductivity type between a side corresponding to an inner periphery of the hole and a side corresponding to an outer periphery of the hole.

15. 2. The surface light emitting device according to claim 1, wherein at least one of the first and second semiconductor structures includes a semiconductor multilayer reflector in which high refractive index layers and low refractive index layers are alternately stacked.

16. the low refractive index layer includes a compound semiconductor containing Al, The surface light emitting device according to claim 15, wherein the compound semiconductor has an Al composition of 0.8 or more.

17. The surface light emitting device according to claim 15 , wherein the semiconductor multilayer film reflector has no oxidized region on a side thereof.

18. The surface light emitting device according to claim 1 , wherein a plurality of the light emitting element components are arranged in an in-plane direction.

19. depositing at least a first semiconductor structure and a compound semiconductor layer in this order on a substrate; forming holes in the compound semiconductor layer; forming a differential resistance structure in the compound semiconductor layer, in which a low resistance region having a relatively low resistance is surrounded by a high resistance region having a relatively high resistance; disposing at least a second semiconductor structure on the compound semiconductor layer on which the different resistance structure is formed; A method for manufacturing a surface light emitting device, comprising:

20. The method for manufacturing a surface light emitting device according to claim 19 , wherein in the step of forming the different resistance structure, the compound semiconductor layer is oxidized from a side surface of the compound semiconductor layer exposed to the hole.

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