Power semiconductor element test device

Abstract

To prevent a semiconductor element including a plurality of transistors and diodes connected to each other from causing insulation breakdown of diodes between channels by test current.SOLUTION: A power semiconductor element test device comprises: a driver circuit 113m including a terminal connected to a first voltage terminal, a second voltage terminal and a gm gate terminal; a driver circuit 113s including a terminal connected to a third voltage terminal, a fourth voltage terminal and a gs gate terminal; a constant current circuit 116m including a fifth voltage terminal; a constant current circuit 116s including a sixth voltage terminal; and a voltage generation circuit 138 generating second voltage (Vpm1) with first voltage (Vmm1) of the first voltage terminal as reference and fourth voltage (Vps1) with third voltage (Vms1) of the third voltage terminal as reference. The second voltage (Vpm1) is applied to the second voltage terminal and the fourth voltage (Vps1) is applied to the fourth voltage terminal. The first voltage (Vmm1) and the third voltage (Vms1) are in floating relation.SELECTED DRAWING: Figure 11

Description

[Technical field]

[0001] The present invention relates to an electric element testing apparatus and an electric element testing method for performing power cycle tests on semiconductor elements such as SiC, IGBT, MOS-FET, Gan-FET, and bipolar transistors.

[0002] Provided is a semiconductor element testing device and a semiconductor element testing method that can efficiently reproduce stress similar to a failure mode in the environment in which a semiconductor element is used and can evaluate power semiconductor elements and the like with high reliability. [Background technology]

[0003] The lifespan of a power semiconductor element includes a lifespan caused by thermal fatigue caused by heat generation in the power semiconductor element itself, a lifespan caused by thermal fatigue caused by temperature changes in the external environment of the power semiconductor element, and a lifespan caused by voltage fatigue caused by the voltage applied to the gate insulating film of the power semiconductor element.

[0004] Generally, life tests for power semiconductor elements are performed by repeatedly turning current on and off to the semiconductor element. For example, tests are performed by setting voltages and currents to the emitter terminal (source terminal) and collector terminal (drain terminal) of the transistor of the semiconductor element, and applying periodic on-off signals (operation / non-operation signals) to the gate terminal.

[0005] The current applied to the semiconductor element during testing is large, at several hundred amperes, and requires low-resistance wiring to avoid heat generation and voltage drop. Because the test current is large, the connection between the semiconductor element and the wiring must be made with low resistance.

[0006] Many of the semiconductor elements to be tested are connected in multiple stages, and when the semiconductor elements are transistors, the voltage between the channels varies greatly depending on the test conditions, etc. If the test signal applied to the semiconductor element is not appropriate, the semiconductor element may be destroyed by the test signal.

[0007] There are many types of semiconductor device component tests, and it is necessary to change the wiring connections according to the type of test. Changing the wiring connections takes a lot of time and can lead to poor connections and connection errors. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Patent Publication No. 2014-138488 Summary of the Invention [Problem to be solved by the invention]

[0009] The semiconductor element part 117 has a first transistor 117m and a second transistor 117s connected in series. At least one of the first transistor 117m and the second transistor 117s has a diode formed therein for measuring the temperature of the transistor. The diode is formed at the same time as the transistor is formed.

[0010] When a current Id flows through the first transistor 117m and the second transistor 117s, the channel-to-channel voltage Vcem of the first transistor 117m changes according to the magnitude of the current Id. The terminal voltage of the semiconductor element component is the sum of the channel-to-channel voltages Vces of the first transistor 117m and the second transistor 117s.

[0011] When a diode is also formed in the transistor formation process, and the diode has a common portion with the gate insulating film of the transistor, the potentials of the anode terminal and cathode terminal of the diode change as the channel voltage Vce of the transistor changes.

[0012] In conventional semiconductor device testing equipment, the potential of the constant current flowing through the diode and the potential of the on / off signal applied to the semiconductor device part 117 are fixed at a predetermined value from the reference potential. Therefore, when the channel voltage of the transistor 117m and the transistor 117s changes due to a change in the current Id flowing through the transistor 117, the terminal voltage of the diode becomes an excessive potential, which causes a problem of dielectric breakdown of the diode, etc. [Means for solving the problem]

[0013] The semiconductor device testing apparatus of the present invention comprises a constant current circuit that generates a constant current for monitoring the temperature of the semiconductor device component being tested, and a gate driver circuit that generates a signal that turns a transistor on and off.

[0014] The semiconductor element part has a first transistor 117m and a second transistor 117s connected in series. A first power supply voltage of a first gate driver circuit that generates a signal to turn on and off the first transistor 117m, a second power supply voltage of a second gate driver circuit that generates a signal to turn on and off the second transistor 117s, and a third power supply voltage of a constant current circuit that generates a constant current are each configured to be electrically insulated from the other power supply voltages or to be floating. The semiconductor element testing apparatus of the present invention relates to a testing apparatus for a semiconductor element in which a first transistor and a second transistor, etc. are connected.

[0015] The first transistor has a first gate terminal, a first terminal, and a second terminal, and the second transistor has a second gate terminal, a third terminal, and a fourth terminal, the second terminal of the first transistor and the third terminal of the second transistor are connected, and a diode is formed or arranged near at least one of the first transistor and the second transistor.

[0016] The device also includes a first voltage generating circuit of a gate signal generating circuit that applies a voltage to a first gate terminal of the first transistor, a second voltage generating circuit of a gate signal generating circuit that applies a voltage to a second gate terminal of the second transistor, and a third voltage generating circuit of a constant current generating circuit that generates a constant current to be applied to the diode.

[0017] The first voltage generating circuit and the second voltage generating circuit are electrically insulated, and the third voltage generating circuit is electrically insulated at least from the first voltage generating circuit or the second voltage generating circuit. The semiconductor element testing apparatus of the present invention relates to a testing apparatus for a semiconductor element in which a first transistor and a second transistor are connected.

[0018] The first transistor has a first gate terminal, a first terminal and a second terminal, the second transistor has a second gate terminal, a third terminal and a fourth terminal, and the second terminal of the first transistor is connected to the third terminal of the second transistor.

[0019] The gate signal generating circuit includes a first voltage generating circuit that applies a voltage to a first gate terminal of the first transistor, a second voltage generating circuit that applies a voltage to a second gate terminal of the second transistor, and a third voltage generating circuit that is a voltage detection circuit that measures or detects at least one of the voltage between the first terminal and the second terminal of the first transistor and the voltage between the third terminal and the fourth terminal of the second transistor.

[0020] The first voltage generating circuit and the second voltage generating circuit are electrically insulated, and the third voltage generating circuit is electrically insulated from at least the first voltage generating circuit or the second voltage generating circuit.

[0021] The semiconductor device testing apparatus of the present invention also includes a current detection circuit that measures or detects a current flowing through at least one of the first gate terminal and the second gate terminal. Also, the gate signal generating circuit generates a first signal that turns on the transistor, and a second signal and a second signal that turns off the transistor.

[0022] The semiconductor device also includes a first switch circuit that shorts the first terminal and the second terminal of the first transistor, and a second switch circuit that shorts the third terminal and the fourth terminal of the second transistor.

[0023] A first connecting metal is electrically connected to a first terminal of the first transistor, and a second connecting metal is electrically connected to a fourth terminal of the second transistor.

[0024] The method for testing a semiconductor element of the present invention relates to a semiconductor element in which a first transistor has a first gate terminal, a first terminal, and a second terminal, a second transistor has a second gate terminal, a third terminal, and a fourth terminal, and a diode is formed or arranged near at least one of the first transistor and the second transistor, and the second terminal of the first transistor is connected to the third terminal of the second transistor.

[0025] A second gate signal for turning the second transistor on or off can be applied between the fourth terminal and the second gate terminal of the second transistor, and a first gate signal for turning the first transistor on or off can be applied between the second terminal and the first gate terminal of the first transistor, the first gate signal being based on the potential of the third terminal of the second transistor, and the voltage across the diode is measured or detected.

[0026] A method for testing a semiconductor element of the present invention relates to a semiconductor element in which a first transistor has a first gate terminal, a first terminal, and a second terminal, a second transistor has a second gate terminal, a third terminal, and a fourth terminal, and the second terminal of the first transistor is connected to the third terminal of the second transistor.

[0027] A second gate signal for turning the second transistor on or off can be applied between the fourth terminal and the second gate terminal of the second transistor, and a first gate signal for turning the first transistor on or off can be applied between the second terminal and the first gate terminal of the first transistor, the first gate signal being based on the potential of the third terminal of the second transistor, and measuring or detecting at least one of the voltages between the first terminal and the second terminal of the first transistor and the voltage between the third terminal and the fourth terminal of the second transistor.

[0028] In addition, the method for testing a semiconductor element of the present invention has a first switch circuit and a second switch circuit, in which a first terminal of a first transistor is connected to the first switch circuit and a second terminal of a second transistor is connected to the second switch circuit.

[0029] In addition, a method for testing a semiconductor element of the present invention includes electrically connecting a first connecting fitting to a first terminal of a first transistor, and electrically connecting a second connecting fitting to a fourth terminal of a second transistor. Effect of the Invention

[0030] A first power supply voltage of a first gate driver circuit that generates a signal to turn on and off a first transistor 117m, and a second power supply voltage of a second gate driver circuit that generates a signal to turn on and off a second transistor 117s are each configured to be insulated (floating) with respect to the other power supply voltage. The signal potential of the gate terminals of the transistors 117m and 117s does not become an excessive voltage, but becomes a predetermined signal or terminal potential.

[0031] A partition 214 is provided to separate the location (space) within the semiconductor element testing equipment where the semiconductor element components 117 are placed from the location of the circuit board that generates the test current for the semiconductor element components 117, generates control signals, and acquires the test results.

[0032] Since there is no need to connect the connection wiring 211 for each test item, no work space is required for changing the wiring connection, and the semiconductor device test device can be made smaller. In addition, the floating power supply voltage can easily set the signal potential, etc. by changing the connection of the connection plug 205. [Brief description of the drawings]

[0033] [Figure 1] FIG. 1 is an explanatory diagram of an electric element testing apparatus according to a first embodiment of the present invention. [Diagram 2] 1 is a block diagram of an electric element testing apparatus according to a first embodiment of the present invention. [Diagram 3] FIG. 1 is an explanatory diagram of an electric element testing apparatus according to a first embodiment of the present invention. [Figure 4] FIG. 2 is an explanatory diagram of a power supply system of the electric element testing apparatus according to the first embodiment of the present invention. [Diagram 5] FIG. 2 is an explanatory diagram of a power supply system of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 6] FIG. 2 is an explanatory diagram of a power supply system of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 7] FIG. 2 is an explanatory diagram of a power supply system of the electric element testing apparatus according to the first embodiment of the present invention. [Figure 8] FIG. 2 is an explanatory diagram of a test method for an electric element according to the present invention. [Figure 9] FIG. 5 is a block diagram of an electric element testing apparatus according to a second embodiment of the present invention. [Figure 10] FIG. 5 is a block diagram of an electric element testing apparatus according to a second embodiment of the present invention. [Figure 11] FIG. 11 is an explanatory diagram of an electric element testing apparatus according to a third embodiment of the present invention. [Figure 12] FIG. 11 is a block diagram of an electric element testing apparatus according to a third embodiment of the present invention. [Figure 13] FIG. 11 is an explanatory diagram of a power supply system of an electric element testing apparatus according to a third embodiment of the present invention. [Figure 14]FIG. 11 is an explanatory diagram of a power supply system of an electric element testing apparatus according to a third embodiment of the present invention. [Figure 15] FIG. 11 is a timing chart of a method for testing an electric element according to a third embodiment of the present invention. [Figure 16] FIG. 11 is an explanatory diagram of an electric element testing apparatus according to a fourth embodiment of the present invention. [Figure 17] FIG. 13 is an explanatory diagram of an electric element testing apparatus according to a fifth embodiment of the present invention. [Figure 18] 1 is a timing chart of a method for testing an electric element according to a first embodiment of the present invention; [Figure 19] FIG. 2 is a timing chart of the method for testing an electric element according to the first embodiment of the present invention. [Figure 20] FIG. 2 is a timing chart of the method for testing an electric element according to the first embodiment of the present invention. [Figure 21] FIG. 11 is a timing chart of a method for testing an electric element according to a second embodiment of the present invention. [Figure 22] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 23] FIG. 1 is an explanatory diagram of an electric element testing apparatus according to a first embodiment of the present invention. [Figure 24] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Diagram 25] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 26] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 27] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 28] FIG. 2 is an explanatory diagram of the arrangement of circuit boards in the electrical element testing apparatus of the present invention. [Figure 29] FIG. 2 is an explanatory diagram of a circuit board of the electrical element testing apparatus of the present invention. [Diagram 30] FIG. 2 is an explanatory diagram of a circuit board of the electrical element testing apparatus of the present invention. [Diagram 31] FIG. 2 is an explanatory diagram of a semiconductor element part. [Diagram 32] FIG. 2 is an explanatory diagram of a semiconductor element part. [Diagram 33] FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] Hereinafter, a semiconductor element testing device for a power cycle test or the like and a semiconductor element testing method according to an embodiment of the present invention will be described with reference to the attached drawings. In the embodiment described in the specification, an IGBT will be taken as an example of a power semiconductor element. The present invention is not limited to IGBTs, and can be applied to various power semiconductor elements such as SiC, MOSFETs, JFETs, and transistors. In addition, the present invention is not limited to transistors, and can also be applied to two-terminal elements such as diodes. In addition, the present invention can also be applied to other semiconductor elements such as thyristors and triacs. Furthermore, it goes without saying that the present invention is not limited to power semiconductor elements, but can also be applied to low-power semiconductor elements and semiconductor elements for small-signal control.

[0035] In addition, the present invention tests elements or components by applying a current or voltage, etc. Therefore, the test objects are not limited to semiconductor elements. It goes without saying that the present invention can also be applied to resistor elements, crystal oscillators, thermistors, posistors, ZNR, phototransistors, photodiodes, speakers, motors, mechanical relays, etc.

[0036] In the drawings for explaining the embodiments of the invention, elements having the same functions are given the same reference numerals, and descriptions thereof may be omitted. In addition, the embodiments of the present invention may be combined in part or in whole.

[0037] 22 is a configuration diagram of the electric element testing apparatus of the present invention. The electric element testing apparatus has a chiller (cooling / warming device) 136, a heating / cooling plate 134, and a circulating water pipe 135 that circulates between the heating / cooling plate 134 and the chiller 136. It also has a control rack 131, a power supply unit 132, and a control circuit 133. Semiconductor element components 117 such as transistors or electronic element components 117 as semiconductor elements to be tested are loaded on the heating / cooling plate 134.

[0038] The following description will be given mainly by way of example of the electric element component 117. Therefore, in this specification, the electric element component 117 will be mainly referred to as the transistor 117.

[0039] The test conditions are set by varying the constant current Id, the gate signal Vsg, and the inter-channel voltage Vce so that the temperature information Tj, Tc of the transistor 117 to be tested reaches predetermined values.

[0040] Tj is temperature information obtained mainly from a diode or the like that measures the temperature of the transistor 117, and Tc is temperature information obtained by acquiring the package temperature of the transistor 117 using a thermocouple or the like.

[0041] If the temperature information Tj or the temperature information Tc changes, it is determined that the transistor 117 has deteriorated or the characteristics have changed, and the test of the transistor 117 is stopped, or the control method is changed, or the test conditions are changed.

[0042] In the following description, the current Id is passed through or applied to the transistor 117 during testing, but the present invention is not limited to this. It goes without saying that Id may be a current that changes over a predetermined period or time. Furthermore, the signal applied to the transistor 117 during testing is not limited to a current, and may be a voltage.

[0043] The characteristic change of the transistor 117 is judged or determined based on the change in the temperature information Tj, etc. Also, the characteristic change, reliability, and lifespan of the transistor 117 are evaluated based on the time it takes for the voltage Vce to reach a predetermined voltage, the time until the transistor 117 is destroyed, etc.

[0044] In the method for testing semiconductor element component 117 of the present invention, the external conditions or test conditions are changed in response to the deterioration or characteristic changes of transistor 117. For example, if transistor 117 generates heat, the water temperature of chiller 136 is lowered. Reducing the current flowing through transistor 117 prevents the deterioration and characteristic changes of transistor 117 from progressing, and as a result, the lifespan of transistor 117 is extended. Therefore, the lifespan and reliability characteristics of transistor 117 for specified set conditions can be quantitatively measured and determined.

[0045] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water of the chiller 136. The temperature of the transistor, etc. is periodically changed in response to the test conditions, and is cooled or heated to a constant value. Temperature information Tj of the test transistor is measured, and the chiller 136 is controlled to maintain the measured temperature information Tj at a constant value. In the following explanation, the temperature information Tj is exemplified.

[0046] The chiller 136 is configured to keep the temperature of equipment, etc. constant by circulating water or heat transfer medium while controlling its temperature. It is mainly used for cooling, but it can also heat as well as cool. It is configured to be able to control various temperatures.

[0047] The control rack 131 includes a power supply device 132 that supplies a test current and a test voltage to the transistor 117, and a control circuit 133 that controls the transistor 117 or sets test conditions.

[0048] The control circuit 133 includes a controller circuit board 111, a gate signal control circuit 112, a device control circuit board 209, a switch circuit board 201, a mother board 207, and the like. The power supply device 132 includes a power supply circuit 121, a switch circuit 122, a switch circuit board 201, and the like.

[0049] Temperature information Tj of the transistor 117 is input to the control circuit 133, and the control circuit 133 controls the chiller 136 based on the temperature information Tj. Alternatively, the control circuit 133 controls the chiller 136 so as to set the temperature information Tj to a predetermined value.

[0050] Although circulating water is described in this specification, it is not limited to water. Ethylene glycol, glycerin, freon, etc. may also be used, and forced air cooling may also be used. Chiller 136 controls the liquid in circulating water pipe 135 to a temperature range of, for example, -1°C to +100°C, and supplies it to heating / cooling plate 134 of the test unit. Heating / cooling plate 134 has a sufficiently large heat capacity.

[0051] In the above embodiment, the heating / cooling plate 134 is used, but the heating plate and the cooling plate may be separate bodies, and heating / cooling may be performed using a heat source / cold source other than the heating / cooling plate.

[0052] FIG. 2 is a configuration diagram or block diagram of a semiconductor device testing apparatus (for example, a power cycle testing apparatus for testing a power transistor) in a first embodiment of the present invention. FIG. 1 is an equivalent circuit diagram or an explanatory diagram of a semiconductor device testing apparatus according to a first embodiment of the present invention.

[0053] In the present invention, an N-channel transistor is exemplified as the semiconductor element component 117, but the present invention is not limited to this. For example, it goes without saying that the present invention can be applied to a P-channel transistor as well. It goes without saying that the present invention can be applied to electrical components such as resistors (FIG. 33(i)), capacitors, coils, relays, and crystal oscillators (FIG. 33(k)) in addition to the semiconductor elements shown in FIG. 33(a) to FIG. 33(i).

[0054] The power supply circuit 121 outputs a large constant current Id for testing the transistor 117. The power supply circuit 121 supplies power (current, voltage) to the semiconductor element components 117 and the like in synchronization with a control signal from the controller circuit board 111 (controller 111), and drives the semiconductor element components 117 and the like at a set constant current or constant voltage using the supplied power. The power supply circuit 121 can also set a maximum voltage value and a maximum current value to be output.

[0055] The switch circuit 122 (SWa) turns on (supply) and off (cut) the supply of the constant current output by the power supply circuit 121. The switch circuit 122 is set or controlled to be on (output constant current) or off (cut off constant current) based on a signal from the controller circuit board 111 (controller 111). Usually, the switch circuit 122 is turned on before the start of a test, and is constantly maintained in the on state during the test of the semiconductor element component.

[0056] 2 illustrates one power supply circuit 121. The number of power supply circuits 121 is not limited to one. For example, the semiconductor device testing apparatus of the present invention may have two or more power supply circuits 121. As the number of power supply circuits 121 increases, a greater variety of waveforms of the current Id, voltage waveforms, and current waveforms can be generated. In the embodiment of the present invention, the power supply circuit 121 will be described, but the power supply circuit 121 is not limited to one that outputs a constant current.

[0057] For example, a power supply circuit 121 capable of setting a maximum voltage and a maximum current is used. An example is a circuit that functions to output a predetermined constant current at a set maximum voltage under certain conditions. Also, when a constant current is output, an example is a circuit that is configured to set the output terminal voltage to a predetermined maximum voltage.

[0058] In the semiconductor device testing apparatus of the present invention, the power supply circuit 121 need not necessarily be a device that outputs only a constant current, but may be a power supply device that can output or set a voltage and a current.

[0059] 2, the current Id is generated by the power supply circuit 121, but the constant current Id can also be realized by adjusting the applied voltage according to the on-resistance state of the transistor 117. Therefore, it goes without saying that the semiconductor device testing apparatus of the present invention is not limited to the power supply circuit 121 that outputs a current, and may be configured as a power supply device that outputs a voltage.

[0060] The constant current Id can also be realized by controlling the voltage value of the gate voltage of the transistor 117. In this specification, a description will be given of applying a predetermined current to the transistor 117 by controlling the power supply circuit 121. However, this is not limiting, and it goes without saying that the voltage of the gate terminal g of the transistor 117 and the voltage of the collector terminal c of the transistor 117 may be adjusted or controlled.

[0061] In the embodiment of the first semiconductor device testing method of the present invention, for ease of explanation, it is assumed that the constant current Id is generated by the power supply circuit 121. The current Id flowing through the transistor 117 is supplied by operating the power supply circuit 121. The power supply circuit 121 is on / off controlled by a signal from the controller circuit board 111 (controller 111). The device control circuit board 209 is timing-controlled by the controller circuit board 111 (controller 111).

[0062] 30 is an explanatory diagram of the device control circuit board 209. A connector 213 is disposed on one side of the device control circuit board 209. The connector 213 is used for electrical connection with the mother board 207.

[0063] A selection switch 312 and a selection switch 313 are arranged on the other side of the device control circuit board 209. In addition, a selection switch 311 is arranged on the switch circuit board 201, as shown in FIG.

[0064] The selection switch 311 and the selection switch 312 are setting switches that indicate the address (number) of the device control circuit board 209. The selection switch 312 sets the address (number) of the device control circuit board 209. The selection switch 311 and the selection switch 312 are 4-bit manually set switches.

[0065] The electrical element testing apparatus of the present invention can test a plurality of electrical elements simultaneously or sequentially. A switch circuit 124 is arranged corresponding to each electrical element. For this reason, it is necessary to set an address (number) on the switch circuit board 201. In Fig. 29, an address (number) is set on the switch circuit board 201 by a selection switch 311. In Fig. 30, an address (number) is set by a device control circuit board 209.

[0066] The selection switches 311 and 312 set addresses (numbers) in the device control circuit board 209 and the switch circuit board 201, respectively, so that they can be associated with the electric elements to be tested.

[0067] Connector 315 is a connector for connecting thermocouple 314. As thermocouple 314, various types of thermocouples such as a T-type thermocouple, a J-type thermocouple, an E-type thermocouple, and a K-type thermocouple can be used.

[0068] The thermocouple 314 is attached to the package of the electric element part 117. Temperature information Tc can be obtained by the thermocouple 314. In the case of a long-term reliability test, it is preferable to employ the temperature information Tc. In this specification, it is assumed that the temperature information Tj is obtained by measuring the temperature of the diode D, and the temperature information Tc is obtained by measuring the package temperature.

[0069] In the present invention, device control circuit board 209 has an electromotive force-temperature conversion table for each thermocouple so that thermocouple 314 can be used for types such as T, J, E, and K thermocouples. Which conversion table to use is selected by selection switch 313. Therefore, the switch of selection switch 313 is set depending on the type of thermocouple 314 to be connected to connector 315. The above address (number) setting items are also applied to the selection switch 311 of the switch circuit board 201.

[0070] 31(a) and 31(b), a semiconductor element component 117 in which a transistor 117m and a transistor 117s are built in one package will be described as an example of the semiconductor element component 117. The transistor 117s and the transistor 117m are connected in series.

[0071] However, as shown in Figures 31(c) and 31(d), the same applies even if the electrode terminal 226c2 of the transistor 117s and the electrode terminal 226c1 of the transistor 117m are electrically connected by wiring material or the like to constitute one semiconductor element component 117.

[0072] The semiconductor device test apparatus or test method described in this specification can be applied to any of the configurations shown in Figures 31(a) and 31(b) and the configurations shown in Figures 31(c) and 31(d). It goes without saying that the present invention can also be applied to a configuration in which only the transistor 117s or only one of the transistors 117s is used. It goes without saying that the test method and test apparatus of the present invention can also be applied to the semiconductor device component 117 in Figure 32.

[0073] 31, a semiconductor element part 117 has a P electrode terminal, an O electrode terminal, and an N electrode terminal to which a large current is applied or output. A diode Dm is built in near the transistor 117m, and a diode Ds is built in near the transistor 117s.

[0074] The diodes Ds and Dm are formed simultaneously with the process of forming the transistor 117. The diodes Ds and Dm are used as temperature sensitive diodes. For example, the semiconductor layers of the diodes share the same layer as the transistor 117 (transistor 117m, transistor 117s). Also, the insulating layers and the like share the same layer.

[0075] In the present invention, for ease of explanation or understanding, the diode is described as an element that monitors the temperature of the transistor 117 under test. The diode is used as a temperature sensing element.

[0076] The temperature-sensing element for monitoring the temperature is not limited to a diode. Any element or component that can detect the temperature of the transistor 117 may be used. For example, a thermistor, a posistor, a thermocouple, etc. may be used.

[0077] In these cases, as described in Figures 1, 4, 5, 6, 7, 11, 13, 14, etc., an insulated DC-DC converter circuit 138 or the like is used to insulate the voltages from one another and to make them floating, and these voltages are used to generate a constant current Ic.

[0078] Needless to say, the diode need not be built into the transistor 117, but may be disposed on the surface of the transistor 117 or in the vicinity thereof. The diode may have a structure or arrangement like that of a diode Di (diode Dis, diode Dim) as shown in Fig. 32. The diodes in Figs. 31 and 32 may be parasitic diodes. The following description will be given taking FIG. 31 as an example, but it goes without saying that the same can also be applied to the electric elements in FIGS.

[0079] 31(a) and 31(b), the semiconductor element part 117 has a P electrode terminal (electrode terminal 226a), an O electrode terminal (electrode terminal 226c), and an N electrode terminal (electrode terminal 226b). A connection wire 211 is connected to the electrode terminal 226. Although not shown, a screw hole is formed in the electrode terminal.

[0080] The transistor 117m has an emitter terminal em and a gate terminal gm, and the collector terminal cm of the transistor 117m is common to the emitter terminal es of the transistor 117s. The diode Dm is connected to the cathode terminal km and the anode terminal am. The emitter terminal em of the transistor 117m is connected to the N electrode terminal 226b.

[0081] The transistor 117s has an emitter terminal es and a gate terminal gs, and the collector terminal of the transistor 117s is connected to the P electrode terminal. The diode Ds has a cathode terminal ks and an anode terminal as. The collector terminal cs of the transistor 117s is connected to the P electrode terminal 226a.

[0082] The collector terminal cm of the transistor 117m and the emitter terminal es of the transistor 117s are electrically connected, and the emitter terminal es of the transistor 117s is electrically connected to the O electrode terminal 226c.

[0083] The voltage generated between the N electrode terminal 226b and the O electrode terminal 226c of the semiconductor element component 117 is the channel voltage Vcem of the transistor 117m. The voltage generated between the P electrode terminal 226a and the O electrode terminal 226c of the semiconductor element component 117 is the channel voltage Vces of the transistor 117s.

[0084] A connector 202m is connected to the terminals (emitter terminal em, gate terminal gm, cathode terminal km, anode terminal am) of the transistor 117m. A connector 202s is connected to the terminals (emitter terminal em, gate terminal gm, cathode terminal km, anode terminal am) of the transistor 117s. A fork plug 205e is connected to the P electrode terminal (electrode terminal 226a), a fork plug 205h is connected to the O electrode terminal (electrode terminal 226c), and a fork plug 205c is connected to the N electrode terminal (electrode terminal 226b).

[0085] In the embodiment of the present invention, the fork plug 205 and the conductive plate 204 are electrically connected by contacting each other, but this is not limited to this. Any structure may be used as long as it can change between an electrically connected state and a non-connected state by a mechanical operation. Also, any structure may be used as long as it can stably maintain the connected state.

[0086] For example, a rotary connector, a rotary joint, a high-current connector, etc. may be used instead of the fork plug 205. A rotary connector, a rotary joint, a high-current connector, a cylindrical conductor rod, a rectangular conductor rod, a comb-shaped conductor plate, etc. may be used instead of the conductor plate 204.

[0087] Although the present specification and drawings will be described as a conductor plate 204, it is not limited to a plate, and may be rod-shaped. Any shape may be used as long as it can be joined to a structure such as the fork plug 205. For example, it may be a structure such as a socket or a connector. Also, the conductor plate 204 may be in the shape of a fork plug, and the fork plug 205 may be connected to the fork plug.

[0088] Although the fork plug 205 is described as being inserted into a component or structure that separates spaces such as the partition wall 214, the present invention is not limited to this. For example, a fork plug 205c may be connected to the conductive plate 204b, and the fork plug 205c may be inserted from the partition wall 214 to electrically connect with the emitter terminal e of the transistor 117.

[0089] A constant current Ic for temperature monitoring is applied to at least one of the diodes Dm and Ds. The equivalent resistance of the diode changes with temperature, and the application of a constant current changes the terminal voltage of the diode D (diode Dm, diode Ds). Temperature information Tj is obtained from the information on this terminal voltage Vi.

[0090] 1, a short circuit 137m is formed between the gate terminal gm and the emitter terminal em of a transistor 117m. A short circuit 137s is formed between the gate terminal gs and the emitter terminal es of a transistor 117s. The short circuit 137 is a switching transistor, for example. Note that the short circuit 137 is not limited to elements such as transistors. For example, the short circuit may be mechanically shorted by a connector or a short pin.

[0091] When the short circuit 137 (short circuit 137m, short circuit 137s) is turned on, the emitter terminal and gate terminal of the transistor 117m or the transistor 117s are shorted. When the emitter terminal and gate terminal of the transistor 117m or the transistor 117s are shorted, the transistor 117m or the transistor 117s is diode-connected. The short circuit 137 may be disposed or configured within the sample connection circuit 203.

[0092] The sample connection circuit 203 includes a gate driver circuit 113, a gate signal control circuit 112, a voltage detection circuit 129 that measures the terminal voltage of the diode D, a circuit for generating a constant current to be applied to the diode, a current detection circuit 128 that detects the current flowing through the gate terminal, a voltage selection circuit 302, etc.

[0093] 1, the temperature of the semiconductor element component 117 to be tested is measured by applying a constant current to the diode and measuring the terminal voltage of the diode D. However, this is not limited to this. Instead of the diode, a parasitic diode additionally formed when forming the transistor 117 may be used to measure the temperature. Alternatively, a thermocouple 314, a temperature sensor, or the like may be used. The means for measuring the temperature may be built into the semiconductor element component 117, or may be attached in close proximity to the semiconductor element component 117.

[0094] 24, the sample connection circuit 203 is disposed in the vicinity of the transistor 117 (semiconductor element component 117) so as to shorten the length of the signal wiring 222 connected to the transistor 117. The vicinity is within about 50 mm.

[0095] Fig. 2 is a configuration diagram of a semiconductor device testing apparatus according to a first embodiment of the present invention Fig. 1 is an equivalent circuit diagram or explanatory diagram of the semiconductor device testing apparatus according to the first embodiment of the present invention.

[0096] The semiconductor device testing apparatus of the present invention has, as the insulating type DCDC converter circuit 138, an insulating type DCDC converter circuit 138m and an insulating type DCDC converter circuit 138s.

[0097] The isolated DC-DC converter circuit 138m generates two voltages (Vpm1 voltage based on Vmm1 potential, and Vpm2 voltage based on Vmm2 potential) from the input voltage (Vc voltage of the circuit voltage). The GND, Vmm1 voltage, and Vmm2 voltage are insulated. The GND, Vpm1 voltage, and Vpm2 voltage are also insulated.

[0098] The isolated DC-DC converter circuit 138s generates two voltages (Vps1 voltage based on Vms1 potential, and Vps2 voltage based on Vms2 potential) from the input voltage (Vc voltage). The GND, Vms1 voltage, and Vms2 voltage are insulated. The GND, Vps1 voltage, and Vps2 voltage are also insulated.

[0099] The Vmm1 voltage, Vmm2 voltage, Vms1 voltage, and Vms2 voltage may be considered as reference voltages and ground voltages. However, this ground voltage is insulated from each voltage. However, the Vmm1 voltage and Vmm2 voltage may be at a common potential without being insulated from the time the voltages are generated. The Vms1 voltage and Vms2 voltage may be at a common potential without being insulated from the time the voltages are generated.

[0100] Although not shown as an isolated DC-DC converter circuit, an isolated DC-DC converter circuit that generates the Vt1 voltage and the Vt2 voltage can be placed as necessary. The Vt1 voltage and the Vt2 voltage are isolated from the Vc voltage. The Vt1 voltage is a negative potential with the Vmm1 voltage as the reference. The Vt2 voltage is a negative potential with the Vms1 voltage as the reference.

[0101] The Vt1 voltage may be generated with the Vmm1 voltage or the Vmm2 voltage as a reference, and the Vt2 voltage may be generated with the Vms1 voltage or the Vms2 voltage as a reference.

[0102] The voltage selection circuit 302 is configured to be able to select between the Vt1 voltage and the Vmm1 voltage and apply it to the gate terminal gm of the transistor 117m. The voltage selection circuit 302 is configured to be able to select between the Vt2 voltage and the Vms1 voltage and apply it to the gate terminal gs of the transistor 117s (Qs). The voltage selection circuit 302 uses an analog switch or the like.

[0103] The potential difference between the Vmm1 voltage and the Vpm1 voltage of the isolated DC-DC converter circuit 138m is set to be the on-voltage Vg applied to the gate terminal gm of the transistor 117m (Qm). The isolated DC-DC converter circuit 138m is configured so that the on-voltage Vg is variable.

[0104] The potential difference between the Vms1 voltage and the Vps1 voltage of the isolated DC-DC converter circuit 138s is set to be the on-voltage Vg applied to the gate terminal gs of the transistor 117s (Qs). The isolated DC-DC converter circuit 138s is configured so that the on-voltage Vg is variable.

[0105] 1 and 11, the A, B, and C blocks of the isolated DC-DC converter circuit 138m are insulated from each other. Also, the A, D, and E blocks of the isolated DC-DC converter circuit 138s are insulated from each other.

[0106] For the purpose of insulation, power is transferred between blocks A and B, between blocks A and C, between blocks A and D, and between blocks A and E using coils, etc. In addition, control signals between each block are sent and received using phototransistors, etc.

[0107] The circuit ground (GND), Vc voltage, Vpm1 voltage, Vmm1 voltage, Vpm2 voltage, and Vmm2 voltage are insulated. In other words, each voltage is floating relative to the other voltages. Note that "floating" means floating relative to other voltages or potentials. "Float" means "to float (on the water surface or in the air)." Floating means that the potentials are independent, but the expression "to float" is also used.

[0108] When the ground is shared, a long loop can be formed by the common connection, which can become a noise path (ground loop). By floating, the loop is cut and the noise caused by the ground loop can be reduced. In addition, the signal potential can be freely set.

[0109] When multiple semiconductor elements (transistors) are connected in multiple stages, as in the semiconductor element component 117 in Fig. 31, the potential of the gate terminal of each transistor fluctuates depending on the channel voltage of the other transistors. Also, when the semiconductor element component 117 is a high-power element such as a power transistor, a large current flows during testing of the semiconductor element component 117. The flow of a large current generates an excessive surge voltage and a transient current.

[0110] Surge voltages and transient currents can cause large noise to be applied to the gate terminals of transistors, resulting in the destruction of the transistors. In the present invention, the signal potentials to be applied to the gate terminals are generated in a floating state. This makes it difficult for noise to affect the semiconductor element components 117, allowing for good testing.

[0111] It is assumed that the voltage generated in the isolated DC-DC converter circuit 138 is floating. The potential difference between the Vmm1 voltage and the Vpm1 voltage is Vm1, and the potential difference between the Vmm2 voltage and the Vpm2 voltage is Vm2.

[0112] For example, if the Vmm1 voltage is connected to the circuit ground (GND) and the Vpm1 voltage is shorted to the Vmm2 voltage, the Vpm2 voltage will be the sum of the Vm1 voltage and the Vm2 voltage with respect to the circuit ground (GND). In other words, the floating potential is determined by setting the potential with another voltage. The potential level can be changed, moved, or set to correspond to the potential of another voltage.

[0113] In the semiconductor device testing device of the present invention, the circuit ground (GND) is insulated from other power supply voltages. Also, it is configured so that each insulated power supply voltage can be wired or connected. For example, the Vmm1 voltage and the Vmm2 voltage can be wired to have the same potential. The Vms1 voltage and the Vms2 voltage can be wired to have the same potential.

[0114] The sample connection circuit 203m1 includes a gate driver circuit 113m that generates a gate signal waveform to be applied to the gate terminal gm of the transistor 117m (Qm), a variable resistor circuit 125m that adjusts or sets the rising and falling waveforms of the gate signal, a short circuit 137m, a voltage selection circuit 302m, and the like.

[0115] The sample connection circuit 203m2 has a constant current setting circuit 130m that generates a constant current Icm to be applied to a diode Dm of a transistor 117m, and a voltage detection circuit 129m that measures or detects the terminal voltage of the diode Dm.

[0116] The sample connection circuit 203s1 includes a gate driver circuit 113s that generates a gate signal waveform to be applied to the gate terminal gs of the transistor 117s, a variable resistor circuit 125s that adjusts or sets the rising and falling waveforms of the gate signal, a short circuit 137s, a voltage selection circuit 302s, and the like.

[0117] The sample connection circuit 203s2 includes a constant current setting circuit 130s that generates a constant current Ics to be applied to the diode Ds of the transistor 117s, and a voltage detection circuit 129s that measures or detects the terminal voltage of the diode Ds. In the following description, unless otherwise specified, the N electrode terminal of the semiconductor element component 117 is set as the reference potential (AGND, 0 (V)).

[0118] When the N electrode terminal of the semiconductor element component 117 is set as a reference potential, the potential of the emitter terminal es of the transistor 117s is equal to the channel voltage Vcem of the transistor 117m.

[0119] The potential of the P electrode terminal of the semiconductor element component 117 is the sum of the channel-to-channel voltage Vcem of the transistor 117m and the channel-to-channel voltage Vces of the transistor 117s. The potentials of the O electrode terminal and the P electrode terminal fluctuate depending on the magnitude of the current Id flowing through the transistors 117m and 117s and the on / off states of the transistors 117m and 117s. In particular, the potential fluctuation of the emitter terminal es of the transistor 117s is large.

[0120] It is preferable that Vms1, which is the potential of the emitter terminal es of the transistor 117s, be configured so as to be able to change in response to fluctuations in the channel-to-channel voltage Vcem of the transistor 117m.

[0121] In the present invention, the potential Vmm1 of the emitter terminal em of the transistor 117m is configured to be floating with respect to the potential Vms1 of the emitter terminal es of the transistor 117s. Therefore, when the channel voltage Vcem of the transistor 117m fluctuates, the Vces voltage also fluctuates in the same direction and at the same potential.

[0122] If the diode Dm of the transistor 117m uses the same semiconductor layer as the transistor 117m or is similar, the potential of the cathode terminal km of the diode Dm may be the potential of the emitter terminal em of the transistor 117m or a potential in the vicinity thereof. Therefore, it is preferable that the power supply potential of the diode Dm be based on the potential of the emitter terminal em of the transistor 117m.

[0123] If the diode Ds of the transistor 117s uses the same semiconductor layer as the transistor 117s or is similar, the potential of the cathode terminal ks of the diode Ds may become the potential of the emitter terminal es of the transistor 117s or a potential in the vicinity thereof. Therefore, it is preferable that the power supply potential of the diode Ds is based on the potential of the emitter terminal es of the transistor 117s.

[0124] In the present invention, the Vc voltage, the Vms1 voltage, the Vps1 voltage, and the Vms2 voltage and the Vps2 voltage of the isolated DC-DC converter circuit 138s are insulated. The Vc voltage, the Vmm1 voltage, the Vpm1 voltage, and the Vmm2 voltage and the Vpm2 voltage of the isolated DC-DC converter circuit 138m are insulated. Each voltage is configured to be able to be connected and wired to any voltage.

[0125] 4 is an explanatory diagram for explaining the wiring of the power supply system of the semiconductor device testing apparatus of the present invention. The N electrode terminal of the transistor 117 is connected to AGND. AGND is, for example, the earth potential.

[0126] The emitter terminal em of the transistor 117m is electrically connected to the N electrode terminal, and the emitter terminal em is also connected to the Vmm1 terminal. The emitter terminal em is also connected to the Vmm2 terminal. The emitter terminal es of the transistor 117s is also connected to the Vms1 terminal. The emitter terminal es is also connected to the Vms2 terminal.

[0127] The potential of the emitter terminal es of the transistor 117s is a voltage obtained by adding the channel voltage Vcem of the transistor 117m to the potential of the N electrode terminal. Therefore, the potential of the emitter terminal es of the transistor 117s changes depending on the on / off state of the transistor 117m and the magnitude of the constant current Id.

[0128] The gate signal Vsg applied to the gate terminal gm of the transistor 117m is based on the potential of the emitter terminal em. As shown in FIG. 18(a), if the voltage that turns on the transistor 117m is Vg, when the voltage Vg is applied from the AGND potential of the N electrode terminal, the transistor 117m turns on.

[0129] In FIG. 18(a), the 0 (V) potential is a voltage that turns off the transistor 117m. The Vt1 voltage is a voltage that is more negative than the 0 (V) potential. The negative Vt1 voltage is applied based on the Vmm1 voltage. Note that in FIG. 18(a) and other figures, the Vt1 voltage is illustrated as the Vt voltage.

[0130] The current Icm flowing through the diode Dm is generated using the Vmm2 and Vpm2 voltages as power sources. Since the Vmm2 voltage is common to the Vmm1 voltage, the voltage at the terminals of the diode Dm is in the range of Vmm1 and Vpm2, and is a voltage based on AGND.

[0131] The gate signal Vsg applied to the gate terminal gs of the transistor 117s is based on the potential of the emitter terminal es, which is equal to the AGND potential of the N electrode terminal plus the channel-to-channel voltage Vcem of the transistor 117m.

[0132] As shown in FIG. 18(a), if the voltage that turns on transistor 117s is Vg, the voltage at which transistor 117s turns on is based on the voltage obtained by adding the channel-to-channel voltage Vcem of transistor 117m to the AGND potential of the N electrode terminal, and when the Vg voltage is applied, transistor 117s turns on.

[0133] The Vms1 voltage is insulated from the Vmm1 voltage and is in a floating state. Therefore, even if the channel-to-channel voltage Vcem of the transistor 117m fluctuates, the potential of the emitter terminal es of the transistor 117s fluctuates in response to the fluctuation of the channel-to-channel voltage Vcem of the transistor 117m. The Vms1 voltage generates the Vps1 voltage based on the emitter terminal es potential.

[0134] The gate signal Vsg applied to the gate terminal gs of the transistor 117s is based on the potential of the emitter terminal es. As shown in Fig. 18(a), if the voltage that turns on the transistor 117s is Vg, when the voltage Vg is applied from the potential of the emitter terminal es, the transistor 117s is turned on.

[0135] The Vt2 voltage is a voltage with a negative polarity relative to the 0 (V) potential. The negative Vt2 voltage is applied based on the Vms1 voltage. Note that in FIG. 18(a) and other figures, the Vt2 voltage is illustrated as the Vt voltage.

[0136] The current Ics flowing through the diode Ds is generated using the Vms2 and Vps2 voltages as power sources. Since the Vms2 voltage is common to the Vms1 voltage, the voltage at the terminals of the diode Ds is in the range between Vms1 and Vps2.

[0137] The Vms1 voltage is insulated from the Vmm1 voltage and is in a floating state. The Vms1 voltage is also connected to the collector terminal cm of the transistor 117m. Therefore, even if the channel-to-channel voltage Vcem of the transistor 117m fluctuates, the voltage (Vg) that turns the transistor 117s on and the voltage (0 (V)) that turns it off do not fluctuate. Therefore, the transistor 117s can be well controlled to be on and off.

[0138] 5 is an explanatory diagram for explaining the wiring of the power supply system of the semiconductor device testing apparatus of the present invention. In the wiring of Fig. 5, the N electrode terminal of the transistor 117 is connected to AGND. AGND is, for example, the earth potential.

[0139] The emitter terminal em of the transistor 117m is electrically connected to the N electrode terminal, and the emitter terminal em is connected to the Vmm1 terminal. The emitter terminal es of the transistor 117s is connected to the Vms1 terminal. The Vmm2 terminal and the Vms2 terminal are insulated from the other power supply terminals and are in a floating state.

[0140] The current Icm flowing through the diode Dm generates the voltages Vmm2 and Vpm2 as power sources. The voltage at the terminals of the diode Dm is basically in the range of Vmm2 and Vpm2.

[0141] The current Ics flowing through the diode Ds generates the voltages Vms2 and Vps2 as power sources. The voltage at the terminals of the diode Ds is basically in the range of Vms2 and Vps2.

[0142] The potential of the Vmm2 terminal is held at a potential based on AGND, and the potential of the Vms2 terminal is held at a potential based on the potential of the emitter terminal es of the transistor 117s.

[0143] The gate signal Vsg applied to the gate terminal gm of the transistor 117m is based on the potential of the emitter terminal em. As shown in FIG. 18(a), if the voltage that turns on the transistor 117m is Vg, when the voltage Vg is applied from the AGND potential of the N electrode terminal, the transistor 117m turns on.

[0144] As shown in FIG. 18(a), if the voltage that turns on transistor 117s is Vg, the voltage at which transistor 117s turns on is based on the voltage obtained by adding the channel-to-channel voltage Vcem of transistor 117m to the AGND potential of the N electrode terminal, and when the Vg voltage is applied, transistor 117s turns on.

[0145] The Vms1 voltage is connected to the emitter terminal es, and is insulated from other voltages such as the Vmm1 voltage, and is in a floating state. Therefore, even if the channel-to-channel voltage Vcem of the transistor 117m fluctuates, the potential of the emitter terminal es of the transistor 117s fluctuates in response to the fluctuation of the channel-to-channel voltage Vcem of the transistor 117m. The Vms1 voltage generates the Vps1 voltage based on the emitter terminal es potential.

[0146] The gate signal Vsg applied to the gate terminal gs of the transistor 117s is based on the potential of the emitter terminal es. As shown in Fig. 18(a), if the voltage that turns on the transistor 117s is Vg, when the voltage Vg is applied from the potential of the emitter terminal es, the transistor 117s is turned on. Other matters have been explained in FIG. 4 and will be omitted here. 6 is an explanatory diagram for explaining the wiring of the power supply system of the semiconductor device testing apparatus of the present invention. In the wiring of Fig. 6, the N electrode terminal of the transistor 117 is connected to AGND.

[0147] The emitter terminal em and the N electrode terminal of the transistor 117m are electrically connected, and the emitter terminal em and the Vmm1 terminal are also connected. The Vmm2 terminal and the Vms2 terminal are also connected. The emitter terminal es and the Vms1 terminal of the transistor 117s are connected. The Vmm1 terminal and the Vmm2 terminal are not connected.

[0148] The current Icm flowing through diode Dm generates voltages Vmm2 and Vpm2 as power sources. The voltage at the terminals of diode Dm is basically in the range of Vmm2 and Vpm2. The current Ics flowing through diode Ds generates voltages Vms2 and Vps2 as power sources. The voltage at the terminals of diode Ds is basically in the range of Vms2 and Vps2. Since the Vmm2 and Vms2 voltages are common, the potential of diode Dm and the potential of diode Ds operate within a common potential.

[0149] 6, the switch circuit 123 is disposed in the power supply connection wiring. The switch circuit 123 can switch between connecting the Vms2 voltage and the Vpm2 voltage, or connecting the Vms2 voltage and the Vmm2 voltage. There are many different types of semiconductor device components 117 to be tested, and therefore it is necessary to match the potentials of the voltage signals applied to the semiconductor device components 117.

[0150] In the present invention, a wide variety of tests can be performed by arranging or providing a switch circuit 123 as shown in Fig. 6. It goes without saying that the above can also be applied to the connections of the power supply systems in Figs. 4, 5, 7, 13, 14, etc.

[0151] The switch circuit 123 is not limited to the embodiment of Fig. 6. For example, it may be configured to select the Vmm1 and Vpm1 voltages and connect to another potential (for example, connect to the Vmm1 voltage). As described above, the present invention is characterized by being configured to be able to change the connection state of the potential generated by an isolated DC-DC converter circuit or the like. Examples of the switch circuit 123 include an analog switch, a relay circuit, and a magnet switch. 7 is an explanatory diagram for explaining the wiring of the power supply system of the semiconductor device testing apparatus of the present invention. In the wiring of Fig. 7, the N electrode terminal of the transistor 117 is connected to AGND.

[0152] The emitter terminal em of the transistor 117m is electrically connected to the N electrode terminal, and the emitter terminal em is connected to the Vmm1 terminal. The Vmm1 terminal is connected to the Vmm2 terminal, and the Vmm1 terminal is connected to the Vms1 terminal. The emitter terminal es of the transistor 117s is connected to the Vms1 terminal.

[0153] The Vmm2 terminal and the Vms2 terminal are connected. The current Icm flowing through the diode Dm generates the Vmm2 voltage and the Vpm2 voltage as power supplies. The voltage at the terminal of the diode Dm is basically in the range of Vmm2 and Vpm2.

[0154] The current Ics flowing through the diode Ds is generated using the Vmm2 and Vps2 voltages as power sources. The voltage at the terminals of the diode Ds is basically in the range of Vmm2 and Vps2. Since the Vmm2 and Vms2 voltages are common, the potential of the diode Dm and the potential of the diode Ds operate within a common potential. Other matters have been explained in FIG. 4, FIG. 5, FIG. 6, etc. and will not be repeated here.

[0155] It goes without saying that the above embodiment can be combined with other embodiments, and it goes without saying that the layout, connection positions, and connection voltages of the switch circuit 123 and the like can be changed as appropriate. When the potential of the Vmm1 voltage changes, the potential of the Vpm1 voltage also shifts, and when the potential of the Vmm2 voltage changes, the potential of the Vpm2 voltage also shifts. When the potential of the Vms1 voltage changes, the potential of the Vps1 voltage also shifts in conjunction with it. When the potential of the Vms2 voltage changes, the potential of the Vps2 voltage also shifts in conjunction with it.

[0156] The voltages Vmm1 and Vms1 are floating. Therefore, when the channel voltage Vcem of the transistor 117m changes, Vms1 changes in conjunction with the change in Vcem.

[0157] The gate signal (ON / OFF signal) applied to the gate terminal gm of the transistor 117m is output with the Vmm1 voltage as a reference, and the gate signal (ON / OFF signal) applied to the gate terminal gs of the transistor 117s is output with the Vms1 voltage as a reference.

[0158] When the current Id flowing through the transistor 117m changes and the voltage applied to the gate terminal gm of the transistor 117m changes, even if the channel-to-channel voltage Vcem of the transistor 117m changes, the Vms1 voltage changes in conjunction with the Vcem voltage because of following.

[0159] Even if the channel voltage Vce of the transistor 117m changes, the Vms1 voltage is floating and the gate signal of the transistor 117s is generated based on the Vms1 voltage, so that the transistor 117s can be controlled to be on and off without any problem.

[0160] Diode Ds is floating with respect to the Vmm1 voltage and the Vms1 voltage, so even if the Vmm1 voltage changes or the inter-channel voltage Vcem of transistor 117m changes, it will not be destroyed and can normally measure the temperature or grasp the temperature range of transistor 117s.

[0161] In Fig. 8(d) and Fig. 15(d), the switch circuit 124d is turned on, causing the O electrode terminal to have the V2 potential (AGND). Also, in Fig. 8(e) and Fig. 15(e), the switch circuit 124c is turned on, causing the O terminal to have the V1 potential.

[0162] As described above, in the testing method of the present invention, the potentials of the electrode terminals (P electrode terminal, O electrode terminal, N electrode terminal) of the semiconductor element part 117 change depending on the test conditions or test state. Also, the potential of the emitter terminal es of the transistor 117s changes depending on the test conditions or test state.

[0163] In the semiconductor element device of the present invention, the power supply wiring methods described in Figures 4, 5, 6, 7, etc., or the power supply wiring methods described in Figures 13 and 14 can be easily realized, so that the test conditions in Figures 8 and 15 can be easily realized.

[0164] In the present invention, the power supply connection states shown in Figures 4, 5, 6, 7, 13, 14, etc. are configured to be automatically changed or selected using electromagnetic switches, relay circuits, switch transistors, etc. Also, they may be changed or selected by changing the soldering. Since each voltage is insulated from the other, no electrical short circuit occurs, and the connection can be easily changed.

[0165] 1, the emitter terminal em of the transistor 117m is grounded to AGND. The gate terminal gm of the transistor 117m is connected to the gate driver circuit 113m. In addition, a short circuit 137m is connected between the gate terminal gm and the emitter terminal em of the transistor 117m.

[0166] The short circuit 137 can be configured with a transistor, an analog switch, a mechanical switch circuit, a relay circuit, a photoswitch, etc. The short circuit 137 may be replaced with a mechanical short connector.

[0167] When the short circuit 137m is turned on, the emitter terminal em and gate terminal gm of the transistor 117m are electrically shorted, and the transistor 117m is diode-connected. When the short circuit 137s is turned on, the emitter terminal es and gate terminal gs of the transistor 117s are electrically shorted, and the transistor 117s is diode-connected.

[0168] A light emitting diode Dt and a photodiode Dr are built into the gate driver circuit 113 (gate driver circuit 113m, gate driver circuit 113s), and a gate signal Vsg (gate signal Vsgm, gate signal Vsgs) is insulated and applied to the photodiode Dr. The output of the photodiode Dr is connected to an amplifier Amp, and the output of the amplifier Amp is applied to a driver dr to output a gate signal sg.

[0169] The gate signal Vsgm input to the gate driver circuit 113m is based on the circuit ground (GND). The gate signal output from the gate driver circuit 113m is generated using the Vmm1 voltage and the Vpm1 voltage.

[0170] As shown in Fig. 18(a), 0 voltage (off voltage) and Vg voltage (on voltage) are output. In the case of transistor 117m, 0 in Fig. 18(a) is the Vmm1 voltage, which turns off transistor 117m. The Vpm1 voltage is the voltage Vg that turns transistor 117m on.

[0171] The Vt1 voltage is a negative voltage with respect to a potential of 0 (V). The voltage selection circuit 302m selects either 0 (V) or the Vt1 voltage and applies it to the gate terminal gm as the Vt voltage. The voltage selection circuit 302m selects the Vt1 voltage and the signal output by the gate driver circuit 113m.

[0172] 18(a), the Vt1 voltage is written as Vt in order to prevent the drawing from becoming complicated and to facilitate understanding. The same is true for the Vt2 voltage.

[0173] The Vt voltage is generated in an isolated DC-DC converter circuit, and the Vt voltage (Vt1, Vt2) is configured to be variable up to -5 (V), with the off voltage (0 (V)) of the transistor 117 (transistor 117s, transistor 117m) as the upper limit.

[0174] 18(a) is the Vms1 voltage, which turns off the transistor 117s, and the Vps1 voltage is the voltage Vg that turns on the transistor 117s.

[0175] The Vt2 voltage is a negative voltage. The voltage selection circuit 302s selects 0 (V) or the Vt2 voltage and applies it to the gate terminal gs as the Vt voltage. The voltage selection circuit 302s selects the Vt2 voltage and a signal output by the gate driver circuit 113s.

[0176] A variable resistance circuit 125m is connected to the output of the gate driver circuit 113m, and a variable resistance circuit 125s is connected to the output of the gate driver circuit 113s.

[0177] The value of the variable resistance circuit 125 (variable resistance circuit 125m, variable resistance circuit 125s) is configured to be set to a predetermined value or in steps between 0 (Ω) and 500 (Ω). The value of the variable resistance circuit 125 may be set by a control signal from the controller circuit board 111 (controller 111) while observing the waveform of the gate terminal g (gate terminal gm, gate terminal gs).

[0178] A resistor R (not shown) may be disposed in the short circuit 137 (short circuit 137m, short circuit 137s). By adjusting the value of the resistor R, the inclination angle of the rising and falling voltage waveform of the gate signal Vsg or the stability of the gate signal can be adjusted or set.

[0179] When the value of the variable resistance circuit 125 is large, the slope of the rising / falling waveform of the gate signal Vsg of the transistor 117 applied to the gate terminals (gate terminals gm, gs) of the transistor 117 (transistor 117m, transistor 117s) becomes gentler.

[0180] On the other hand, when the resistance value of the variable resistance circuit 125 is small, the slope of the rising / falling waveform of the gate signal Vsg becomes steep. By changing the resistance value of the variable resistance circuit 125 or setting it to a predetermined value, the on-signal waveform of the transistor 117 can be adjusted.

[0181] 19 and 20, the gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) in the waveform of the gate signal Vsg applied to the gate terminal g (gate terminals gs and gm) of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on-time of the transistor 117 can be adjusted arbitrarily.

[0182] The resistance value of the variable resistor circuit 125 and the resistance value of the variable resistor circuit 126 are set by the controller circuit board 111 (controller 111). The resistance value to be set is not limited to a constant value. The slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate driver circuit 113 may be changed.

[0183] The resistance value at the time of the rising edge and the resistance value at the time of the falling edge of the gate signal Vsg may be changed. Also, the resistance value may be variably controlled in real time. By variably controlling the variable resistance circuit 125 in real time, the on-time of the transistor 117 is stabilized.

[0184] When the resistance value of the variable resistance circuit 125 at the time when the gate signal Vsg rises is reduced, the waveform of the on-voltage Vg applied to the gate terminal g of the transistor 117 becomes steeper, and the transistor 117 turns on quickly. When the resistance value of the variable resistance circuit 125 at the time when the gate signal Vsg rises is increased, the waveform of the on-voltage applied to the gate terminal of the transistor 117 becomes gentler, and the transistor 117 turns on gently.

[0185] When the resistance value of the variable resistance circuit 125 at the falling edge of the gate signal Vsg is reduced, the signal waveform that changes from an on voltage to an off voltage applied to the gate terminal of the transistor 117 becomes steeper, quickly turning off the transistor 117. When the resistance value of the variable resistance circuit 125 at the falling edge of the gate signal Vsg is increased, the waveform of the on voltage Vg applied to the gate terminal g of the transistor 117 becomes gentler, and the transistor 117 turns off gently.

[0186] As described above, it is possible to control, adjust or set the value of the variable resistance circuit 125 connected to the gate terminal of the transistor 117 or the rise time / fall time of the gate driver circuit 113. Therefore, as a function of the gate driver circuit 113, it is possible to change or modify the magnitude of the inrush current Is and surge voltage Vs generated in the transistor 117 to be tested.

[0187] Needless to say, the operation of the transistor 117 can be achieved not only by controlling the on-voltage of the gate terminal of the transistor 117 but also by changing or setting the value of the constant current Id or voltage Vm supplied to the transistor 117 by the power supply circuit 121 .

[0188] 18, a gate signal control circuit 112 controls a cycle time tcycle, an on time ton, or an off time toff of a gate signal output by a gate driver circuit 113, and the gate signal is applied to a gate terminal of a transistor 117. The gate signal control circuit 112 is controlled by a controller circuit board 111 (controller 111).

[0189] Although the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 is variable, this is not limiting. For example, it goes without saying that the variable resistance circuit 125 may be an external resistor, and the resistor may be connected to the gate terminal of the transistor 117 by a connector (not shown) or the like. The value of the resistor to be connected is set by observing the waveform of the gate terminal of the transistor 117 and the waveform of the channel current Id.

[0190] A current detection circuit 128 (current detection circuit 128m, current detection circuit 128s) that measures the inter-terminal voltage of the variable resistance circuit 125 (variable resistance circuit 125m, variable resistance circuit 125s) is disposed or connected to the variable resistance circuit 125.

[0191] A leak often occurs in the gate insulating film of the transistor 117, which deteriorates the transistor 117 (transistor 117m, transistor 117s) due to testing. When a leak occurs in the gate insulating film, a leak current flows between the gate terminal g and the emitter terminal e of the transistor 117, and between the gate terminal g and the collector terminal c of the transistor 117. The leak current flows into the variable resistance circuit 125. Therefore, by measuring the terminal voltage of the variable resistance circuit 125, the leak current can be detected or the magnitude of the leak current can be measured.

[0192] The leakage current is measured when the gate signal Vsg is Vg (on voltage) and the gate signal Vsg is 0 (V) or Vt voltage (off voltage). Depending on whether the leakage current is larger than a predetermined current value or the voltage between the terminals of the variable resistance circuit 125 is larger than a predetermined voltage, the deterioration state of the transistor 117 is quantitatively grasped and a decision is made as to whether to continue or stop the test.

[0193] The current detection circuit 128 operates at the timing shown in Fig. 18(i). In Fig. 18(i), Si denotes a switch (not shown) that operates the current detection circuit 128. The switch Si is turned on at H level to measure the voltage across both terminals of the variable resistance circuit 125 (variable resistance circuit 125m, variable resistance circuit 125s) and measures the voltage Ve (voltage Vem, voltage Ves).

[0194] The switch Si is turned on (H level) during at least one of a period during which the constant current Id flows through the transistor 117 (operating period) and a period during which the constant current Id does not flow through the transistor 117 (non-operating period).

[0195] As shown in Figures 18(b), (c), and (i), the period when the constant current Id does not flow is tcs, which is the period before the constant current Id flows through transistor 117, and tcm, which is the period after the constant current Id flows, and the period when the constant current Id flows is tcc. During at least one of the periods tcs, tcm, and tcc, the switch Si is turned on, and the voltage Ve across both terminals of the variable resistance circuit 125 is measured.

[0196] The resistance of the variable resistance circuit 125 is configured so that it can be changed according to the characteristics of the transistor 117. Also, it is configured so that the resistance value can be changed or set according to changes in the characteristics of the transistor 117 during testing. Also, it is preferable to change the resistance value when the constant current Id flows through the transistor 117 (tcc) and when it does not flow (tcs, tcm). Also, it is preferable to change the resistance value according to the magnitude of the constant current Id.

[0197] The leakage current can be obtained by dividing the voltage between the terminals of the variable resistance circuit 125 by the variable resistance value. The variable resistance circuit 125 may be a resistor circuit having a fixed resistance value. By grasping the leakage current, the deterioration state and characteristics of the transistor 117 can be measured or obtained.

[0198] The periods of tcc, tcs, and tcm are configured to be variable. Also, the start or end timing of tcc, tcs, and tcm are configured to be movable.

[0199] The terminal voltage Vem of the variable resistor circuit 125m is input to the current detection circuit 128m. The current detection circuit 128m is composed of a block A and a block B. The block A has a Vc voltage, and the block B has a Vmm1 voltage and a Vpm1 voltage. The blocks A and B are insulated from each other. The current detection circuit 128m converts the Vem voltage into a voltage referenced to the circuit ground (GND). The Vem voltage is sent to the device control circuit board 209m.

[0200] The inter-terminal voltage Ves of the variable resistance circuit 125s is input to a current detection circuit 128s. The current detection circuit 128s is composed of a block A and a block B. The block A is a voltage Vc, and the block B is a voltage Vms1 and a voltage Vps1. The blocks A and B are insulated from each other. The current detection circuit 128s converts the Ves voltage into a voltage referenced to the circuit ground (GND). The Ves voltage is sent to the device control circuit board 209s.

[0201] The potential of the variable resistance circuit 125m that detects the leakage current operates between the voltage Vmm1 and the voltage Vpm1. The voltage Vmm1 is connected to AGND. Therefore, the terminal potential of the variable resistance circuit 125m can be stably measured.

[0202] The potential of the variable resistor circuit 125s for detecting the leakage current operates between the voltage Vms1 and the voltage Vps1. The voltage Vms1 is the voltage of the emitter terminal es of the transistor 117s.

[0203] The Vmm1 voltage and the Vms1 voltage are not electrically connected and are in a floating state. The Vms1 voltage shifts in conjunction with the magnitude of the channel-to-channel voltage Vcem of the transistor 117m. Therefore, even if the potential of the emitter terminal es of the transistor 117s changes, the terminal potential of the variable resistance circuit 125s can be stably measured.

[0204] In the embodiment of Fig. 1, the voltage Ve is generated by the current flowing through the gate terminal g of the transistor 117 in the variable resistance circuit 125, and the value and change of the voltage are measured. However, this is not limited to this. For example, it goes without saying that the current flowing through the gate terminal g of the transistor 117 may be measured directly. It also goes without saying that the measured or acquired current value may be configured to be amplified and acquired.

[0205] The potential of the gate terminal gm of the transistor 117m and the potential of the gate terminal gs of the transistor 117s shift when the inter-channel voltage Vcem of the transistor 117m and the voltage of the emitter terminal em of the transistor 117m change.

[0206] In the current detection circuit 128, the circuit power supply voltage block A is insulated from the voltage detection block B or voltage detection block D. Block B is a power supply for the Vmm1 voltage and the Vpm1 voltage, and block D is a power supply for the Vms1 voltage and the Vps1 voltage. Therefore, even if the potentials of the gate terminals gm and gs shift, it does not affect the measurement of the voltage Ve (voltage Vem, voltage Ves).

[0207] The output of the constant current setting circuit 130 (constant current setting circuit 130m, constant current setting circuit 130s), the operational amplifier circuit 116 (operational amplifier circuit 116m, operational amplifier circuit 116s) (buffer amplifier circuit), the transistor T (transistor Tm, transistor Ts), and the variable resistance circuit 126 (variable resistance circuit 126m, variable resistance circuit 126s) constitute a constant current circuit. The constant current circuit generates a constant current to be passed through the diode D (diode Dm, diode Ds). The constant current circuit is not limited to the circuit configuration shown in Fig. 1. Any configuration may be used as long as it can apply a current to the diode D.

[0208] The output of the constant current setting circuit 130 (constant current setting circuit 130m, constant current setting circuit 130s) is input to an operational amplifier circuit 116 (buffer amplifier). The output of the operational amplifier circuit 116 is connected to a gate terminal of a transistor, and a variable resistance circuit 126 is connected to an emitter terminal of the transistor.

[0209] The voltage block A of the circuit power supply of the current detection circuit 128m and the voltage detection block B are insulated from each other, and the voltage block A of the circuit power supply of the current detection circuit 128s and the voltage detection block D are insulated from each other. The voltage block A of the circuit power supply of the voltage detection circuit 129m is insulated from the voltage detection block C, and the circuit power supply of the voltage detection circuit 129s is insulated from the voltage detection block E.

[0210] Therefore, even if the potentials of the gate terminals gm and gs shift, it does not affect the measurement of the voltage Ve (voltage Vem, voltage Ves), nor does it affect the measurement of the voltage Vi (voltage Vim, voltage Vis).

[0211] The constant current setting circuit 130 sets a predetermined voltage. The resistance value of the variable resistance circuit 126 is set according to the magnitude of the constant current flowing through the diode. The resistance values ​​of the variable resistance circuits 126m and 126s can be set and changed independently.

[0212] In the embodiment of FIG. 1, the constant current circuit changes the current value by the variable resistance circuit 126, but this is not limiting, and the variable resistance circuit 126 may be a fixed resistance circuit.

[0213] The voltage of the voltage Vc (voltage Vcm, voltage Vcs) is set by the device control circuit board 209. The voltage Vc (voltage Vcm, voltage Vcs) generates a current Ics flowing through the diode Ds and a current Icm flowing through the diode Dm.

[0214] A constant current Ic (constant current Ics, constant current Icm) flows through a diode D (diode Ds, diode Dm), generating a terminal voltage Vi (terminal voltage Vis, terminal voltage Vim).

[0215] The voltage detection circuit 129 (voltage detection circuit 129m, voltage detection circuit 129s) is composed of an A block and a C block or an E block. The A block of the voltage detection circuit 129m operates on the voltage Vc of the circuit power supply. The C block of the voltage detection circuit 129m is the voltage Vmm2 and the voltage Vpm2. The A block of the voltage detection circuit 129s operates on the voltage Vc of the circuit power supply.

[0216] The E block of the voltage detection circuit 129s is the voltage Vms2 and the voltage Vps2. The A block of the voltage detection circuit 129 is insulated from the D block or the E block.

[0217] Therefore, even if the potential of diode D (diode Dm, diode Ds) fluctuates, the potential of voltage Vim or voltage Vis is converted to voltage Vi (Vim, Vis) based on the circuit ground of the A block of the circuit power supply and transmitted to the device control circuit board 209.

[0218] By isolating the circuit power supply voltage Vc from the constant current circuit power supply (C block, D block), it is possible to float the potential of diode D. Therefore, even if the inter-channel voltage Vcem of transistor 117m, etc. changes, an overvoltage is not applied to diode Ds.

[0219] The current detection circuit 128 has a differential amplifier (subtractor) circuit. The voltage Ve (voltage Vem, voltage Ves) input to the current detection circuit 128 is converted into a voltage Ve (voltage Vem, voltage Ves) based on the circuit ground by the differential amplifier (subtractor) circuit or the like.

[0220] The voltage detection circuit 129 has a differential amplifier (subtractor) circuit. The voltage Vi (voltage Vim, voltage Vis) input to the voltage detection circuit 129 is converted into a voltage Vi (voltage Vim, voltage Vis) based on the circuit ground by the differential amplifier (subtractor) circuit or the like.

[0221] As described above, the current detection circuit 128 and the voltage detection circuit 129 are insulated from the circuit power supply voltage (floating with respect to the circuit power supply voltage), and the current detection circuit 128 and the voltage detection circuit 129 have a differential amplifier (subtractor) circuit, which acquires the voltages (Ve, Vi). Therefore, the voltages (Ve, Vi) can be measured stably and accurately. Furthermore, the diodes D (Ds, Dm) and the transistors 117 (transistors 117m, 117s) are not destroyed. Furthermore, no noise is generated during testing, and the test state is stable.

[0222] A terminal of the short circuit 137m is connected to the emitter terminal em of the transistor 117m, and the other terminal is connected to the gate terminal gm of the transistor 117m. A terminal of the short circuit 137s is connected to the emitter terminal es of the transistor 117s, and the other terminal is connected to the gate terminal gs of the transistor 117s.

[0223] The emitter terminal es of transistor 117s has a voltage obtained by adding the channel-to-channel voltage Vcem of transistor 117m to the emitter terminal em voltage of transistor 117m. The channel-to-channel voltage Vcem varies depending on the on / off state of transistor 117m and the magnitude of the current Id flowing between the channels. The gate terminal gs of transistor 117s is insulated from the circuit power supply Vc, and the current detection circuit 128 is also insulated from the circuit power supply voltage Vc. The potential of the gate terminal gs of transistor 117s is floating with respect to the emitter terminal em of transistor 117m.

[0224] Even if the current Id flowing through transistor 117m fluctuates, even if the potential of the emitter terminal em of transistor 117m fluctuates, or even if the potential of the gate terminal gm of transistor 117m fluctuates, the terminal potential of diode Ds, the terminal potential of diode Dm, and the terminal potential of the gate terminal gs of transistor 117s are floating with respect to the terminal potential of the emitter terminal em of transistor 117m, and change in accordance with the potential fluctuation.

[0225] The Vi voltages (Vis, Vim) and Ve voltages (Ves, Vem) are measured or obtained by a differential amplifier (subtractor) circuit. Therefore, an overvoltage is not applied to the transistor 117 and the diode D, and the Vi voltages (Vis, Vim) and Ve voltages (Ves, Vem) can be obtained stably.

[0226] The differential amplifier (subtractor) circuit is not limited to an analog circuit using an operational amplifier circuit or the like. For example, it goes without saying that the terminal voltage of the diode D and the terminal voltage of the variable resistor circuit 125 may be analog-digitally converted to obtain the Vi voltage (Vis, Vim) and the Ve voltage (Ves, Vem) by digital circuit processing or the like. The same is true for the operational amplifier circuit 116 (the operational amplifier circuit 116m, the operational amplifier circuit 116s) and its peripheral circuitry.

[0227] A terminal of the transistor 117m is connected to a connection pin 206 of a connector 202m, and a terminal of the transistor 117s is connected to a connection pin 206 of a connector 202s. The connector 202 is configured so as to be easily connected to and detached from the terminal of the transistor 117.

[0228] In FIG. 2, the sample connection circuit 203 (sample connection circuit 203s1, sample connection circuit 203s2, sample connection circuit 203m1, sample connection circuit 203m2) includes or is arranged with a gate driver circuit 113, a variable resistance circuit 125, a variable resistance circuit 126, a constant current setting circuit 130, a current detection circuit 128, a voltage detection circuit 129, and a voltage selection circuit 302.

[0229] As shown in FIG. 24, the sample connection circuit 203 is arranged separately from the device control circuit board 209 so that it can be located close to the transistor 117 under test.

[0230] It is preferable to provide one sample connection circuit 203 for each transistor 117 to be tested, or each transistor 117m, or each transistor 117s to be tested. However, this is not limited to this, and one sample connection circuit 203 including multiple signal circuits may be provided for multiple transistors 117, etc.

[0231] 2, the sample connection circuit 203 is connected to the transistor 117 via a connection pin 206 of the connector 202. The gate driver circuit 113 and the gate terminal g (gate terminal gm, gate terminal gs) of the transistor 117 (transistor 117m, transistor 117s) are arranged so as to have a short distance of 30 mm or less between them.

[0232] If the distance between the gate driver circuit 113 and the gate terminal g of the transistor 117 is long, noise or the like is superimposed on the gate terminal g, causing the transistor 117 to malfunction, which directly leads to the destruction of the transistor 117.

[0233] 2, the sample connection circuits 203s (sample connection circuits 203s1 and 203s2) are connected to a device control circuit board 209s via a connector 208s. Voltages Vis, Vcs, gate signals Vsgs, and voltage Ves are transmitted to and received from the device control circuit board 209s.

[0234] The sample connection circuit 203m (sample connection circuit 203m1, sample connection circuit 203m2) is connected to a device control circuit board 209m via a connector 208m. Voltages Vim, Vcm, gate signals Vsgm, and voltage Vem are transmitted to and received from the device control circuit board 209m.

[0235] The controller circuit board 111 (controller 111) controls the device control circuit board 209 (device control circuit board 209s, device control circuit board 209m), the sample connection circuit 203s (sample connection circuit 203s1, sample connection circuit 203s2, short circuit 137 (short circuit 137m, short circuit 137s) and transmits and receives various data and voltages as necessary.

[0236] 24, the device control circuit board 209 is placed in room B of a housing 210 of the semiconductor device testing apparatus. The housing 210 is a frame or an apparatus main body in which the power supply device 132, the drive circuit, and the heating / cooling plate 134 of the semiconductor device testing apparatus are incorporated. The sample connection circuit 203 is disposed in a position close to the transistor 117 to be tested, and is therefore disposed in room C of the housing 210 of the semiconductor device testing apparatus.

[0237] The sample connection circuits 203 (sample connection circuits 203m1, 203m2, 203s1, and 203s2) are connected to a connector 208 arranged on the side surface of the housing 210. Wiring connected to a connection pin 206 of the connector 208 is connected to a device control circuit board 209 in Room B.

[0238] The housing 210 is not limited to a box-like one, and may be, for example, a room. The power supply circuit 121 is arranged in the room. The partition walls 214 and 215 may be walls of the room.

[0239] 24, the semiconductor element parts 117 (transistors, etc.) to be tested are placed in room C. The transistors 117, etc. are placed and fixed in close contact with the heating and cooling plate 134. The partition walls 215 and 214 are electrostatically shielded or have an electrostatic shielding net or the like disposed thereon, and function as an electrostatic shield.

[0240] In the present invention, the housing 210 is divided into a plurality of regions, such as chamber A, chamber B, and chamber C. Chamber C is configured to be injected with dry air (dry gas, gas with a low dew point temperature). Air pressure is applied to chamber C, and the air injected into chamber C is discharged through openings 216, etc. The partition walls (partition walls 214, 215) have the function of separating the respective chambers (chamber A, chamber B, chamber C) and the function of preventing outside air from flowing in.

[0241] In particular, dry air is introduced into chamber C because condensation may occur during testing at low temperatures. The dry air that has flowed into chamber C is discharged to the other chambers through opening 216. However, if opening 216 is large, a large amount of dry air is required. Therefore, opening 216 is preferably sized to allow fork plug 205, which serves as a connecting member, to be inserted therein.

[0242] The sample connection circuit 203 is connected to a device control circuit board 209 by a connection pin 206 of a connector 208. The sample connection circuits 203 are individually arranged corresponding to each transistor 117 to be tested, and the sample connection circuits 203 are configured so as to be easily detachable by a connector or the like.

[0243] The connectors 202 and 208 are not limited to connectors, and may be any type that can electrically connect or disconnect wiring, such as soldering.

[0244] 22 and 24, the transistor 117 to be tested is positioned and fixed in close contact with the heating and cooling plate 134. Thermally conductive grease and silicone oil compound for heat dissipation are applied between the transistor 117 and the heating and cooling plate 134.

[0245] A detachable connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is connected to the connector 202, and the signal wiring 222 is connected to a sample connection circuit 203.

[0246] The signal wiring 222 between the sample connection circuit 203 and the connector 202 is formed to be as short as possible. If the signal wiring 222 is long, noise is superimposed on the signal wiring 222, causing the transistor 117 to malfunction. For example, if noise is superimposed on the gate terminal g of the transistor 117, the transistor 117 may turn on and break down. The signal wiring 222 should be twisted or a shielded wiring such as a coaxial cable should be used.

[0247] 24, the connector 208 is provided on the side surface of the housing 210, and the connector 208 and a device control circuit board 209 arranged in room B are connected by a signal wiring 235. Control signals or output signals of the gate driver circuit 113, the gate signal control circuit 112, the variable resistance circuit 125, the operational amplifier circuit 116, etc. are input and output from the device control circuit board 209.

[0248] In the embodiment of FIG. 2 etc., the symbol for the switch circuit is used for the switch circuit 124. Any element can be used as the switch circuit for the switch circuit 124 as long as the resistance (on resistance) when closed (on) is small. Examples include a mechanical relay, a transistor, a mechanical relay, a phototransistor, a photodiode switch, etc.

[0249] Fig. 3 is an equivalent circuit diagram (part) of Fig. 2 of the semiconductor device testing apparatus according to the first embodiment of the present invention. In this embodiment of Fig. 3, a power MOSFET 124 is used as the switch circuit 124. The power MOSFET has a small inter-channel voltage (Vsd).

[0250] It should be noted that a device other than a power MOSFET may be used as the switch circuit 124. Needless to say, the switch circuits 122 and 124 may be power transistors or the like, in addition to power MOSFETs. Other examples include electromagnetic relays and electromagnetic switches. When the switch circuit 122 (switch SWa) is turned on, the constant current Id output by the power supply circuit 121 is supplied to the test circuit.

[0251] The switch circuit 124 is formed on the switch circuit board 201 as shown in Fig. 23. The switch circuit 124b is disposed on the switch circuit board 201b. The conductor plates 204c and 204d are attached to the switch circuit board 201b. The fork plug 205e is inserted from the opening 216 of the partition wall 214. The fork plug 205d is electrically connected to the conductor plate 204c. The fork plug 205d is electrically connected to the conductor plate 204d.

[0252] The switch circuit 124d is disposed on a switch circuit board 201d. A conductor plate 204a and a conductor plate 204b are attached to the switch circuit board 201d. The fork plug 205b is electrically connected to the conductor plate 204b.

[0253] The switch circuit 124c is disposed on a switch circuit board 201c. A conductor plate 204e and a conductor plate 204f are attached to the switch circuit board 201c. The fork plug 205a is electrically connected to the conductor plate 204e.

[0254] 2 etc., when the switch circuit 124a is turned on, the output of the power supply circuit 121 is short-circuited, and the current Id output by the power supply circuit 121 flows to Im' ground. When the switch circuit 124a is turned on, the charge between the terminals (P electrode terminal-N electrode terminal) of the semiconductor element part 117 to be tested and the charge of the power supply circuit 121 are discharged. The occurrence of surge voltages, transient currents, etc. is suppressed.

[0255] When switch circuit 124a is turned on, the output of power supply circuit 121 is short-circuited, and electric charges, etc. of power supply circuit 121 are discharged. When switch circuits 124c and 124d are turned on simultaneously, the output of power supply circuit 121 is also short-circuited, and electric charges, etc. of power supply circuit 121 are discharged. In the case of this configuration or method, switch circuit 124a is not necessary.

[0256] It is also effective to shift the timing at which the switch circuits 124c and 124d are turned on. For example, the switch circuit 124c turns on before the switch circuit 124d, causing a short circuit between the channels of the transistor 117s. Next, the switch circuit 124d turns on, causing a short circuit between the channels of the transistor 117m. Alternatively, the switch circuit 124d turns on before the switch circuit 124c, causing a short circuit between the channels of the transistor 117m. Next, the switch circuit 124c turns on, causing a short circuit between the channels of the transistor 117s. By sequentially shorting the channels, the occurrence of a surge voltage or the like occurring in the semiconductor element component 117 is further suppressed. When the switch circuit 124b is turned on, the current Id output by the power supply circuit 121 can be supplied to the transistor 117 as the test current Id. The fork plug 205 is inserted from an opening 216 in the partition wall 214 and is electrically connected to the switch circuit board 201 .

[0257] 23, the switch circuit 124 is mounted on a switch circuit board 201. The switch circuit 124 is connected to a conductor plate 204 (metal plate, conductive plate).

[0258] Conductive plate 204 is, for example, a copper plate with a thickness of 5 mm and a width of 50 mm. Its length is the width of the circuit board plus the width required to connect fork plug 205. Conductive plate 204 is not limited to being plate-shaped. Any shape may be used as long as fork plug 205 and conductive plate 204 can be electrically connected. For example, conductive plate 204 may be rod-shaped or spherical.

[0259] Fig. 27 illustrates the fork plug 205 and the connection (contact) state between the fork plug 205 and the conductor plate 204. Fig. 27(b) is a cross-sectional view taken along line AA' in Fig. 27(a). Two conductor plates 204 are attached to the switch circuit board 201. The switch circuit board 201 has a full-surface earth layer (not shown), which is thermally connected to the conductor plate 204. Heat from the conductor plate 204 is dissipated via the full-surface earth layer. The conductor plate 204 and the switch circuit board 201 are secured together with screws.

[0260] A connection bolt 219 is attached to the fork plug 205. A connection wire 211 is attached to the connection bolt 219. The fork plug 205 and the connection wire 211 can be detached from each other by the connection bolt 219.

[0261] Fig. 27 is a configuration diagram of fork plug 205. Fig. 27(a) shows a state in which conductor plate 204 attached to switch circuit board 201 and fork plug 205 are coupled together. Fig. 27(b) shows a coupled state of conductor plate 204 and fork plug 205 when a cross section taken along line AA' in Fig. 27(a) is viewed from the direction of the arrow.

[0262] As shown in FIG. 27(b), the fork plug 205 and the conductor plate 204 are mechanically connected or fitted together to realize an electrical connection. When the U-shaped portion of the fork plug 205 is inserted into the conductor plate 204, the U-shaped portion expands slightly, and the fork plug 205 and the conductor plate 204 are joined well. Pressure may be applied to the connection portion using a leaf spring or the like. By joining or fitting well, the electrical resistance of the connection portion becomes extremely small, and no heat is generated or a voltage drop occurs even when a large current flows through the connection portion. It is preferable to polish and smooth the surface of the contact portion 220.

[0263] A connection bolt 219 is attached to the fork plug 205. A connection wiring 211 is connected to the connection bolt 219. A cross section taken along line AA' in FIG. 27(a) is shown in FIG. 27(b). The conductive plate 204 and the fork plug 205 are in contact with each other at contact parts 220a and 220b formed on the fork plug 205. The surface of the contact part 220 is nickel-plated as a base, and silver-plated on the surface. The contact part 220 is made of phosphor bronze and a nickel alloy. The connection bolt 219 is not limited to a bolt, and may be anything that can electrically connect the fork plug 205 and a wire. At least the surface of the conductive plate 204 that comes into contact with the fork plug 205 is plated with silver.

[0264] The fork plug 205 is made of a metal such as aluminum. The surface is nickel-plated and then silver-plated. The fork plug 205 has a threaded groove, and is configured so that the connection wiring 211 can be attached to the fork plug 205 with a connection bolt 219. The surface of contact portion 220 is silver plated. The insertion force of fork plug 205 into conductive plate 204 is set to be 40 to 60 N.

[0265] Platinum, gold, silver, tungsten, copper, nickel, or alloys of combinations thereof may be used for the contact portion 220. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7). FIG. 23 is an explanatory diagram showing the connection state of the fork plug 205, the switch circuit board 201, and the conductive plate 204. As shown in FIG.

[0266] The switch circuit 124 is connected to two conductor plates. As shown in Fig. 23, when the switch circuit 124 is a MOS transistor, the drain terminal and the source terminal are connected to different conductor plates 204. When the switch circuit 124 is a bipolar transistor, the collector terminal and the emitter terminal are connected to different conductor plates 204. When the switch circuit 124 is turned on (conductive), the two conductor plates 204 are electrically connected. An IGBT can also be used as the switch circuit 124. 24 is a diagram showing the configuration of a semiconductor device testing apparatus according to the present invention. A circulating water pipe 135 is incorporated in a heating / cooling plate 134.

[0267] A connector 202 is connected to a terminal of the transistor 117, and a signal wiring 222 connected to the connector 202 is connected to a sample connection circuit 203. A signal wiring 235 of the sample connection circuit 203 is connected to a device control circuit board 209 via a connector 208.

[0268] 23, 24, etc., fork plug 205 and conductor plate 204 are brought into contact with each other by inserting fork plug 205 through opening 216 of partition wall 214. At the time of contact, the U-shaped portion of fork plug 205 is expanded by conductor plate 204, and strong electrical and mechanical contact is achieved.

[0269] 24 shows a layout diagram of each component of the semiconductor device testing apparatus of the present invention. The housing 210 of the semiconductor device testing apparatus is separated into three sections (room C, room A, and room B). The upper part of the housing is room C, and the lower part of the housing is separated into rooms A and B. A power supply unit 132 is placed in room A. Room A and room B are separated by a partition wall 215.

[0270] Each chamber is shielded. The power supply device 132, switch circuit board 201, and transistor 117 generate large noise as they repeatedly operate and deactivate. Since noise can cause the circuit boards and other components to malfunction, the shielding prevents such malfunctions. The shielding is achieved by placing conductive plates, metal plates, and metal films around each chamber.

[0271] In room C, a heating / cooling plate 134, a circulating water pipe 135, etc. shown in FIG. 24 are arranged, and a transistor 117 to be tested is arranged on the heating / cooling plate 134.

[0272] Partition walls 214 are formed between chamber C and chamber A and between chamber B and chamber C. A water leakage sensor (not shown) is disposed around heating / cooling plate 134 in chamber C. If circulating water (cooling medium) or the like leaks, the water leakage sensor is activated and is configured to stop the semiconductor device testing equipment or sound an alarm.

[0273] In addition, a drainage groove is formed around the periphery of the heating and cooling plate, so that if circulating water (cooling medium) leaks from the heating and cooling plate, the circulating water (cooling medium) flows into the drainage groove and is discharged outside the semiconductor element testing equipment. As described above, the partition wall 214 is configured so that even if the circulating water pipe 135 is damaged, the circulating water (cooling medium) and the like will not leak into the lower chambers A and B.

[0274] A partition 215 is formed between chamber A in which the power supply unit 132 is disposed and chamber B in which the drive circuit system is disposed. Electrostatic shielding plates are disposed on the partitions 214 and 215 to block noise from the power supply unit 132 and prevent the noise from being applied to the drive circuit system in chamber B.

[0275] In the embodiment of the present invention, the fork plug 205 is inserted from chamber C and connected to the conductive plate 204 in chamber B. The operation of pushing the fork plug 205 from the top to the bottom is easy.

[0276] However, the present invention is not limited to this. For example, the conductive plate 204 may be disposed in the C chamber, and the fork plug 205 may be inserted from the B chamber to establish an electrical connection.

[0277] 24, the fork plug 205 is inserted from chamber C to chamber B to electrically connect the fork plug 205 and the conductor plate 204. The transistor 117 is fixed to the heating / cooling plate 134, and the switch circuit board 201 is fixed at the mother board 207 position.

[0278] By selecting the opening 216 into which the fork plug 205 is inserted, the switch circuit board 201 to be controlled can be easily selected and the test method and test conditions can be changed. Therefore, by using the fork plug 205 in the present invention, the transistor 117 to be tested can be easily connected to the drive circuit, and the test method, etc. can be changed in a short time.

[0279] Examples of the partitions 214 and 215 include wall-like structures, plate-like structures, film-like objects, mesh-like objects, wire net-like objects, etc. One example is phenolic resin (phenolic resin, phenol-formaldehyde resin, phenolic resin). By using a metal or conductive material as the partition and connecting the metal or the like to a predetermined potential or to earth, an electrostatic shield effect is achieved. The partition may be any object that separates the first and second parts of the semiconductor device testing apparatus.

[0280] 28, a connector 213 is attached to a mother board 207. A controller circuit board 111, a device control circuit board 209, and a switch circuit board 201 are attached to the connector of the mother board 207. The number of switch circuit boards 201 to be prepared according to the number of transistors 117 to be tested can be easily realized by changing the number of switch circuit boards 201 to be attached to the mother board 207. A conductor plate 204 is attached to the switch circuit board 201. The conductor plate 204 and a fork plug 205 are connected.

[0281] A selection switch 312 is arranged on the device control circuit board 209, and a selection switch 311 is arranged on the switch circuit board 201, and the addresses (numbers) of the circuit boards are added. The controller board 111 reads the addresses (numbers) of the selection switches 311 and 312, and associates them with the electric element components 177 to be tested.

[0282] 29, a fork plug 205 is connected to parts A and B of a conductor plate 204. The moving body plate 204 is configured to be longer than the switch circuit board 201. Therefore, the conductor plate 205 can easily connect the fork plug 205 to parts A and B. As shown in FIG. 29, a selection switch 311 is arranged on the switch circuit board 201, and a selection switch 312 is arranged on the device control circuit board.

[0283] The address (number) set by the selection switch 311 on the switch circuit board 201 and the address (number) set by the selection switch 312 on the device control circuit board are sent to the controller board 111 via the connector 213 and the signal line of the mother board 207.

[0284] The electrical element testing apparatus of the present invention can test a plurality of electrical elements simultaneously or sequentially. A device control circuit board 209 and a switch circuit 124 are arranged corresponding to each electrical element. An address (number) is set in the switch circuit board 201 by a selection switch 311, and an address (number) is set by the device control circuit board 209.

[0285] By setting addresses (numbers) in the device control circuit board 209 and the switch circuit board 201 by the selection switches 311 and 312, the controller 111 can associate them with the electric elements to be tested.

[0286] Connector 315 is a connector for connecting thermocouple 314. A variety of thermocouples can be used as thermocouple 314, such as a T-type thermocouple, a J-type thermocouple, an E-type thermocouple, a K-type thermocouple, etc. The type of thermocouple 314 being used is set by selection switch 313. The controller reads the data (type of thermocouple) set by selection switch 313, refers to an electromotive force-temperature table corresponding to the type of thermocouple, and grasps the temperature of electric element part 117 to be tested.

[0287] Thermocouple 314 is attached to the package of electric element part 117. Temperature information Tc can be obtained by thermocouple 314. Also, connector 315 has a function of judging whether thermocouple 314 is attached or not based on the magnitude of voltage generated in connector 315 and the presence or absence of voltage.

[0288] The controller circuit 111 has a function of reading the addresses (numbers) of the selection switches 312 and 311, and judging or detecting the number, position, and presence or absence of connection of the electric element parts 117 to be tested or being tested.

[0289] 28 shows four switch circuit boards 201, but the number is not limited to this. A plurality of switch circuit boards 201 may be required depending on the number of transistors 117 to be tested. The switch circuit boards 201 are connected to a connector 213 of a mother board 207.

[0290] Although not shown in Fig. 28, a large noise occurs when the switch circuit 124 of the switch circuit board 201 is turned on and off. As a countermeasure, a metal plate is placed between the switch circuit boards 201 and is grounded. The metal plate is electrically connected to the circuit ground (GND) or the earth ground (AGND).

[0291] Temperature information Tj, temperature information Tc, voltage Vi, a control signal for the variable resistance circuit 125, a control signal for the constant current setting circuit 130, etc. are transmitted to the mother board 207. In addition, power supply wiring and ground wiring for each circuit are formed and supplied to each circuit board via a connector 213. The temperature information Tj is information about the temperature of the transistor 171 that is obtained from the terminal voltage Vi of the temperature sensing diode D by calculation or the like. The conductive plate 204 is disposed so as to protrude from the switch circuit board 201. A fork plug 205 is connected to this protruding portion.

[0292] Figures 23 and 24 are diagrams showing a more physical configuration of the block diagram of the semiconductor device testing apparatus of the present invention shown in Figure 3. As shown in Figure 23, conductive plates 204i and 204j are attached to switch circuit board 201a. Switch circuit 124a is disposed between conductive plates 204i and 204j.

[0293] When the switch circuit 124a is turned on, it shorts the terminals of the power supply circuit 121 of the power supply device 132, and discharges the charge of the power supply circuit 121. Therefore, when the switch circuit 124a is turned on, no test current is supplied to the semiconductor element part 171.

[0294] Fork plug 205i is connected to conductive plate 204i. Fork plug 205j is connected to conductive plate 204j. Power supply wiring 212 is connected to fork plug 205i, and power supply wiring 212 is connected to power supply device 132. Power supply wiring 212 is connected to fork plug 205j, and power supply wiring 212 is connected to power supply device 132.

[0295] As described in Fig. 1, the gate terminal gm, emitter terminal em, and O electrode terminal of the transistor 117m, and the emitter terminal es, gate terminal gs, and P electrode terminal of the transistor 117s are electrically insulated and configured to be in a floating state by the circuit configuration of the semiconductor device testing device of the present invention. Therefore, the potential of each terminal is determined by determining the potential of the N electrode terminal, etc. Furthermore, when the potential of the N electrode terminal, etc. changes, the potentials of the gate terminal gm, emitter terminal em, and O electrode terminal of the transistor 117m, and the emitter terminal es, gate terminal gs, and P electrode terminal of the transistor 117s shift. Therefore, the potential of each terminal of the transistor 117 is held at a normal potential or shifted to a normal potential or a predetermined potential.

[0296] The function of maintaining the potential of each terminal of the transistor 117 at a normal potential or shifting it to a normal potential is particularly effective in a configuration in which the transistors 117m and 117s are stacked in multiple stages, such as the semiconductor element component 117 in FIG.

[0297] In particular, the potential of the gate signal Vsgs input to the gate terminal gs of the transistor 117s needs to be generated based on the potential of the O electrode terminal. For example, in the present invention, the gate driver circuit 113s is insulated from the input signal. Therefore, the potential of the gate signal sgs input to the gate terminal gs of the transistor 117s can input a predetermined signal level of the gate signal sgs even if the potential of the O electrode terminal fluctuates.

[0298] 23 and 24, the electrode terminal 226a (N electrode terminal) of the transistor 117 and the fork plug 205c are connected by a connection wire 211c. The electrode terminal 226c (O electrode terminal) of the transistor 117 and the fork plug 205h are connected by a connection wire 211b. The electrode terminal 226a (P electrode terminal) of the transistor 117 and the fork plug 205e are connected by a connection wire 211a.

[0299] The fork plug 205c is inserted from an opening 216 in the partition wall 214. The fork plug 205c inserted from the opening 216 is fitted (held) with the conductor plate 204b of the switch circuit board 201d. The fork plug 205b is connected to the conductor plate 204b, which serves as the ground potential (AGND) of the power supply device 132.

[0300] The fork plug 205h is inserted from the opening 216 of the partition wall 214. The fork plug 205h inserted from the opening 216 is fitted (held) with the conductor plate 204f of the switch circuit board 201c. The fork plug 205g is connected to the conductor plate 204f, and the fork plug 205g is connected to the fork plug 205f fitted with the conductor plate 204a of the switch circuit board 201d.

[0301] The potential of the O electrode terminal of the transistor 117 is determined when the switch circuit 124d of the switch circuit board 201d is turned on and the potential of the conductor plate 204f is determined by the fork plug 205g. The potential of the O electrode terminal determines the potential of the emitter terminal es of the transistor 117s. The emitter terminal es of the transistor 117s is connected to the sample connection circuit 203s1.

[0302] The circuit configuration of the sample connection circuit 203s1 is in a floating state. Therefore, the gate signal sgs applied to the gate terminal gs of the transistor 117s has an amplitude value based on the potential of the emitter terminal es, so that the transistor 117s is well controlled to be turned on and off. Even if the potential of the O electrode terminal fluctuates, the gate signal sgs of the transistor 117s has an amplitude value based on the potential of the emitter terminal es.

[0303] The fork plug 205a is connected to a power output terminal of the power supply device 132. The potential of the O electrode terminal of the transistor 117 becomes a potential determined by the current Id output by the power supply device 132 when the switch circuit 124c of the switch circuit board 201c is turned on.

[0304] The potential of the O electrode terminal determines the potential of the emitter terminal es of the transistor 117s. The emitter terminal es of the transistor 117s is connected to a sample connection circuit 203s1. Moreover, the terminal of the diode Ds is connected to a sample connection circuit 203s2.

[0305] The circuit configuration of the sample connection circuit 203s1 and the sample connection circuit 203s2 is in a floating state. Therefore, the gate signal sgs applied to the gate terminal gs of the transistor 117s has an amplitude value based on the potential of the emitter terminal es, so that the transistor 117s is well controlled to be turned on and off. In addition, the potential levels of the terminals (cathode terminal ks, anode terminal as) of the diode Ds are basically set by the potential of the O electrode terminal.

[0306] Even if the potential of the O electrode terminal fluctuates, the gate signal sgs of the transistor 117s has an amplitude value based on the potential of the emitter terminal es. The potential levels of the terminals (cathode terminal ks, anode terminal as) of the diode Ds are also stable.

[0307] The fork plug 205e is inserted from the opening 216 of the partition wall 214. The fork plug 205e inserted from the opening 216 is fitted (held) with the conductor plate 204d of the switch circuit board 201b. A fork plug 205d is connected to the conductive plate 204c, and the output voltage of the power supply device 132 is applied thereto.

[0308] The potential of the P electrode terminal of the transistor 117 is determined when the switch circuit 124b of the switch circuit board 201b is turned on and the potential of the conductor plate 204d is determined by the fork plug 205e. The potential of the P electrode terminal determines the potential of the collector terminal cs of the transistor 117s. Also, the potential of the emitter terminal es is determined by the signal level applied to the gate terminal gs of the transistor 117s.

[0309] The transistor 117s is connected to a sample connection circuit 203s1 and a sample connection circuit 203s2. The circuit configuration of the sample connection circuit 203s1 and the sample connection circuit 203s2 is in a floating state. The transistor 117m is connected to a sample connection circuit 203m1 and a sample connection circuit 203m2. The circuit configuration of the sample connection circuit 203m1 and the sample connection circuit 203m2 is in a floating state.

[0310] A gate signal sgs applied to the gate terminal gs of the transistor 117s has an amplitude value based on the potential of the emitter terminal es. A gate signal sgm applied to the gate terminal gm of the transistor 117m has an amplitude value based on the potential of the emitter terminal em.

[0311] The potential states of the fork plug 205 e , the fork plug 205 h , and the fork plug 205 c vary depending on the operating state of the power supply device 132 and the on / off state of the switch circuit 124 of the switch circuit board 201 .

[0312] In the semiconductor device testing apparatus and the testing method of the present invention, the circuit configuration of the sample connection circuit 203 is configured to be in an insulating state and a floating state. The potential states of the fork plugs 205e, 205h, and 205c can satisfactorily control the transistor 117 even if the operating state of the power supply device 132 and the on / off state of the switch circuit 124 of the switch circuit board 201 fluctuate.

[0313] Also, the Vi voltage (Vis voltage, Vim voltage) and Ve (Vem voltage, Ves voltage) can be stably acquired or measured. Also, the Vc voltage (Vcs voltage, Vcm voltage) can be set to a predetermined value, and a specified constant current can be stably applied to the diode D (diode Ds, diode Dm). Also, the leakage current of the gate terminal measured by the terminal voltage of the variable resistance circuit 125 is stable without being affected by the potential fluctuation of the gate signal line.

[0314] Fork plug 205e, fork plug 205h, and fork plug 205c are provided in each transistor 117 to be tested, and are connected to conductor plate 204 of switch circuit board 201. Which switch circuit board 201 to connect to varies depending on test conditions, test contents, etc., and needs to be changed. This can be easily done by changing fork plug 205 inserted into opening 216 of partition wall 214.

[0315] The potential of each terminal of transistor 117 is determined by the connection between conductor plate 204 and fork plug 205 and the operation of power supply device 132. In the present invention, the circuit configuration of sample connection circuit 203 is configured to be able to be in an insulated state and a floating state, so that even if a potential fluctuation occurs by changing the connection of fork plug 205, the terminal potential of transistor 117 shifts by the amount of the potential fluctuation, and the test state does not change.

[0316] 2 and 23, a switch circuit 124b is disposed between the conductor plate 204d and the conductor plate 204c of the switch circuit board 201b, and short-circuits the conductor plate 204d and the conductor plate 204c. By short-circuiting, the current Id output by the power supply circuit 121 is supplied to the transistor 117 as the test current Id.

[0317] Switch circuit 124a is disposed between conductive plate 204i and conductive plate 204j of switch circuit board 201a, and when switch circuit 124a is turned on, conductive plate 204i and conductive plate 204j are short-circuited. When this is short-circuited, current Id output by power supply circuit 121 flows to ground as discharge current Im', and the channels of transistor 117 (between the P electrode terminal and the N electrode terminal) are short-circuited. When the channels are short-circuited, no overvoltage or overcurrent is applied to transistor 117.

[0318] A switch circuit 124c is disposed between the conductor plates 204e and 204f of the switch circuit board 201a. A switch circuit 124d is disposed between the conductor plates 204ea and 204b of the switch circuit board 201d.

[0319] When the switch circuits 124c and 124d are turned on, the current Id output by the power supply circuit 121 flows to the ground as a discharge current Im, and the channels (between the P electrode terminal and the N electrode terminal) of the transistor 117 are short-circuited. By shorting the channels, no surge voltage or transient current is applied to the transistor 117.

[0320] As shown in FIG. 24, the fork plug 205c is inserted through an opening 216 in a partition wall 214 provided between the C chamber and the B chamber, and the conductive plate 204b and the fork plug 205c are connected.

[0321] Fork plug 205h is inserted through opening 216 of partition wall 214 provided between chambers C and B, and conductive plate 204f and fork plug 205f are connected. Fork plug 205e is inserted through opening 216 of partition wall 214 provided between chambers C and B, and conductive plate 204d and fork plug 205e are connected.

[0322] Chamber C contains transistor 117 to be tested and heating / cooling plate 134, while chamber B contains a drive circuit for testing transistor 117 (see FIG. 28, etc.). Chamber C and chamber B are separated by a partition wall 214, so that even if refrigerant liquid leaks from heating / cooling plate 134, it will not leak into chamber B. A water leakage sensor (not shown) is disposed around heating / cooling plate 134. Also, a groove is formed to drain the cooling liquid to the outside of the testing device if it leaks out.

[0323] An electromagnetic shield plate, electrostatic shield plate, electromagnetic shield mesh, electrostatic shield mesh, etc. are arranged on the partition 214 to prevent the drive circuit system in chamber B from malfunctioning due to noise generated from the transistor 117.

[0324] The current passed through the transistor 117 under test is large, at several hundred amperes, and therefore the thickness of the connection wiring 211 used is also large, so that the connection wiring 211 does not have sliding properties and is hard, and it is not easy to change the connection of the connection wiring 211.

[0325] In the semiconductor device testing apparatus of the present invention, connection to the switch circuit board 201 can be achieved by the fork plug 205 inserted from the chamber C. Therefore, changing the connection with the switch circuit board 201 to be used depending on the test conditions of the transistor 117 does not require changing the wiring of the connection wiring 211, but only requires changing the position of the opening 216 into which the fork plug 205 is inserted. Also, the switch circuit board 201 only requires changing the position of the connector 213 that connects to the mother board 207.

[0326] Even if there are a plurality of transistors 117 to be tested, the use of a single switch circuit board 201a is sufficient, because the output current Id of the power supply circuit 121 can be made to flow as Im' to the ground line.

[0327] The number of switch circuit boards 201b required is equal to the number of transistors 117 to be tested. For example, if there are 12 transistors 117 to be tested, it is preferable to prepare 12 switch circuit boards 201b. It is also advantageous in terms of cost to make the switch circuit boards 201 have the same specifications.

[0328] A plurality of transistors or the like are mounted as switch circuits 124 on switch circuit board 201. The greater the number of switch circuits 124, the smaller the impedance that shorts out two conductive plates 204.

[0329] 25 and 26 show the state in which fork plug 205 is inserted into opening 216 of partition wall 214. Fig. 25 is a view from the front side of partition wall 214, and Fig. 26 is a view from the back side of partition wall 214. To avoid complicating the drawings, switch circuit board 201 and the like are omitted from Figs. 25 and 26. Fork plug 205 is inserted from opening 216 and is electrically connected to conductor plate 204.

[0330] 23 and other drawings, one switch circuit 124 is shown on the switch circuit board 201. However, in reality, a plurality of switch circuits 124 are arranged between the conductive plates 204.

[0331] For example, the switch circuit board 201d in FIG. 24 illustrates a state in which two switch circuits 124 (switch circuit 124d, switch circuit 124) are arranged on the switch circuit board 201.

[0332] By arranging a plurality of switch circuits 124, it is possible to short-circuit the conductor plates 204 (for example, between conductor plates 204c and conductor plates 204e) with low resistance. When each switch circuit 124 is composed of a transistor, an on-voltage is applied simultaneously to the gate terminals of the plurality of transistors, and the switch circuit 124 is turned on.

[0333] Heat generated by switch circuit 124 is dissipated to conductive plate 204. A heat sink is also attached to switch circuit 124. The ground terminal of switch circuit 124 is connected to the ground of switch circuit board 201, and heat is also dissipated via the copper foil of the ground.

[0334] 8 and 15 are explanatory diagrams of the semiconductor element testing apparatus and the testing method or testing state of the semiconductor element component of the present invention. The present invention tests the semiconductor element component 117 using any of the states or methods shown in Fig. 8 and Fig. 15. Also, the semiconductor element component 117 is tested by sequentially or randomly performing any of the states or methods shown in Fig. 8 and Fig. 15.

[0335] 8 and 15 are illustrated with a focus on the operation or control of the semiconductor element component 117. In an actual test, the constant current Id flowing through the semiconductor element component 117 (transistor 117) or the voltage applied to the P electrode terminal is set or varied.

[0336] 8 and 15, the on-voltage or off-voltage is set or applied as shown in Fig. 18(a). However, the Vt voltage applied during the tn2 and tn1 periods is set according to the semiconductor element component 117 to be tested. The other signals are controlled as shown in Fig. 18.

[0337] FIG. 8(a) is an explanatory diagram of a method (state) for shorting the terminals (between the P electrode terminal and the N electrode terminal) of the transistor 117 to discharge electric charge and prevent a surge voltage and a transient current from flowing through the transistor 117.

[0338] An off voltage is applied as a gate signal Vsgm to the gate terminal gm of the transistor 117m, and the transistor 117m is turned off. An off voltage is applied as a gate signal Vsgs to the gate terminal gs of the transistor 117s, and the transistor 117s is turned off. The short circuit 137s and the short circuit 137m are turned off (open). The switch circuit 124c and the switch circuit 124d are turned on (closed).

[0339] In the above state, the transistors 117m and 117s are inactive, the terminals (between the P electrode terminal and the N electrode terminal) of the transistor 117 are short-circuited, and the short-circuit current Im of the switch circuits 124c and 124d flows. Therefore, the charge between the terminals of the transistor 117 (the charge between the terminals of the power supply device 132) is discharged.

[0340] 2, it goes without saying that the current Im' may be caused to flow by turning on the switch circuit 124a without turning on the switch circuit 124c and the switch circuit 124d. It goes without saying that the currents Im and Im' may be caused to flow by turning on the switch circuits 124c, 124d, and 124a. A resistor may be disposed in the path through which the current Im or the current Im' flows, and the state through which the current Im or the current Im' flows may be controlled.

[0341] FIG. 8B shows a state in which the short circuit 137s is turned on to connect the transistor 117s to a diode-connected state, and the transistor 117m is turned on to pass a constant current Id through the semiconductor element component 117, thereby testing the semiconductor element component 117.

[0342] An on-voltage or off-voltage is applied periodically or intermittently as a gate signal Vsgm to a gate terminal gm of the transistor 117m, and the transistor 117m is controlled to be in an on or off state.

[0343] The short circuit 137s connected between the gate terminal gs and the emitter terminal es of the transistor 117s is turned on, and the transistor 117s is brought into a diode-connected state. The switch circuit 124c and the switch circuit 124d are turned off (open).

[0344] A constant current Id flows between the P electrode terminal and the N electrode terminal of the semiconductor element component 117. The transistor 117m is turned on and off by a gate signal Vsgm applied to a gate terminal gm of the transistor 117m, and the semiconductor element component 117 is tested.

[0345] FIG. 8C shows a state in which the transistor 117m is in a diode-connected state, the transistor 117s is turned on, a constant current Id is caused to flow through the semiconductor element component 117, and the semiconductor element component 117 is tested.

[0346] An on-voltage or off-voltage is applied periodically or intermittently to the gate terminal gs of the transistor 117s as a gate signal Vsgs, and the transistor 117s is controlled to be in an on or off state.

[0347] A short circuit 137m connected between the gate terminal gm and the emitter terminal em of the transistor 117m is turned on, and the transistor 117m is brought into a diode-connected state. The switch circuits 124c and 124d are turned off (open). A constant current Id flows between the P electrode terminal and the N electrode terminal of the semiconductor element component 117.

[0348] The transistor 117s is turned on and off by a gate signal Vsgs applied to the gate terminal gs of the transistor 117s, thereby testing the semiconductor element part 117.

[0349] 8(d), the transistor 117s is turned on and the transistor 117m is turned off. A gate terminal gs of the transistor 117s is periodically or intermittently applied with an on-voltage or off-voltage as a gate signal Vsgs. The transistor 117m is controlled to be in an off state.

[0350] The short circuit 137 connected between the gate terminal g and the emitter terminal e of the transistor 117m and the transistor 117s is turned off (opened), the switch circuit 124c is turned off, and the switch circuit 124d is turned on (closed).

[0351] A current Id flows from the P electrode terminal to the channel of the transistor 117s in the semiconductor element component 117, and the current Id flows through the switch circuit 124d. The transistor 117s is turned on and off by a gate signal Vsgs applied to the gate terminal gs of the transistor 117s, thereby testing the semiconductor element component 117.

[0352] In the embodiments of Figures 8(d) and 15(d), even if an on-voltage is applied to the gate terminal gm of transistor 117m, if the terminal-to-terminal voltage of switch circuit 124d is lower than the channel-to-channel voltage Vcem of transistor 117m, the tests of Figures 8(d) and 15(d) can be equivalently performed even if transistor 117m is turned on. It is also effective to perform a test by turning on the transistor 117m in FIG. 8(d) and FIG. 15(d) as a test for the semiconductor element part 117.

[0353] 8(e), the transistor 117m is turned on and the transistor 117s is turned off. A gate signal Vsgm, which is a turn-on voltage or turn-off voltage, is applied periodically or intermittently to the gate terminal gm of the transistor 117m. The transistor 117s is controlled to be in the off state.

[0354] The short circuit 137 connected between the gate terminal g and the emitter terminal e of the transistor 117m and the transistor 117s is turned off (opened), and the switch circuit 124d is turned off (opened), and the switch circuit 124d is turned on (closed).

[0355] A current Id flows from the P electrode terminal of the semiconductor element component 117 to the switch circuit 124c, and a current Id flows between the channels of the transistors 117m. The transistors 117m are turned on and off by a gate signal Vsgm applied to the gate terminal gm of the transistors 117m, and the semiconductor element component 117 is tested.

[0356] In the embodiments of Figures 8(e) and 15(e), even if an on-voltage is applied to the gate terminal gs of the transistor 117s, if the terminal-to-terminal voltage of the switch circuit 124c is lower than the channel-to-channel voltage Vces of the transistor 117s, the tests of Figures 8(e) and 15(e) can be equivalently performed even if the transistor 117s is turned on.

[0357] 8(e) and 15(e), a surge voltage and a transient current flow through the semiconductor element component 117, and a more severe test can be performed. This is an effective test for the semiconductor element component 117.

[0358] FIG. 8(f) shows a state in which a gate signal is applied to the gate terminals g (gate terminals gm, gs) of the transistors 117m and 117s, a constant current Id is caused to flow through the semiconductor element component 117, and the semiconductor element component 117 is tested.

[0359] An on-voltage or off-voltage is applied periodically or intermittently to the gate terminal gs of the transistor 117s and the gate terminal gm of the transistor 117m, so that the transistors 117s and 117m are controlled to be in an on state or an off state.

[0360] The short circuit 137 connected between the gate terminal g and the emitter terminal e of the transistor 117m and the transistor 117s is turned off. The switch circuit 124c and the switch circuit 124d are turned off (open). A constant current Id flows between the P electrode terminal and the N electrode terminal of the semiconductor element component 117.

[0361] By controlling the transistors 117m and 117s so that they are not turned on at the same time, or by controlling the transistors 117m and 117s so that they are turned on for only a short period of time, a surge voltage or a transient current flows through the semiconductor element component 117, enabling a more severe test to be performed.

[0362] The tests of the semiconductor element parts 117 are performed by selecting or combining the tests of Fig. 8(a) to Fig. 8(f) above. Examples of combinations include performing the tests of Fig. 8(a) to Fig. 8(f) in order, and performing the tests of Fig. 8(a) to Fig. 8(f) randomly.

[0363] The method for testing a semiconductor device according to the present invention will be described below in further detail. As described with reference to Fig. 1 etc., a constant current Ic (Ics, Icm) for measuring temperature is supplied to a diode D (diode Ds, diode Dm) of a transistor 117. When the temperature information Tc is acquired using the thermocouple 314, a circuit for supplying a constant current Ic and its operation are not required.

[0364] The voltage detection circuit 129 acquires or measures the voltage between the terminals of the diode D. The voltage detection circuit 129 has a differential amplifier (subtractor) circuit. The voltage Vi (voltage Vim, voltage Vis) input to the voltage detection circuit 129 is converted into a voltage Vi (voltage Vim, voltage Vis) with respect to the circuit ground by the differential amplifier (subtractor) circuit or the like.

[0365] The current detection circuit 128 has a differential amplifier (subtractor) circuit. The voltage Ve (voltage Vem, voltage Ves) input to the current detection circuit 128 is converted into a voltage Ve (voltage Vem, voltage Ves) based on the circuit ground by the differential amplifier (subtractor) circuit or the like.

[0366] As described above, the current detection circuit 128 and the voltage detection circuit 129 are insulated from the circuit power supply voltage (floating with respect to the circuit power supply voltage), the current detection circuit 128 and the voltage detection circuit 129 have a differential amplifier (subtractor) circuit, and the voltages (Ve, Vi) are obtained by the differential amplifier (subtractor) circuit.

[0367] Therefore, the voltages (Ve, Vi) can be measured stably and accurately. Also, the diode D (Ds, Dm) and the transistor 117 (transistor 117m, transistor 117s) are not destroyed. Furthermore, no noise is generated during testing, and the test state is stable.

[0368] The terminal voltage Vi of the diode D is buffered and output. The terminal voltage Vi is applied to a temperature measurement circuit (not shown) of the device control circuit board 209, which determines temperature information Tj of the transistor 117 from the terminal voltage Vi and transfers it to the controller circuit board. The temperature information Tj is output from the connector 213 of the device control circuit board 209 to the mother board 207 and sent to the controller circuit board 111 (see FIG. 28).

[0369] A gate signal Vsg (Vsgs, Vsgm) that turns on the gate of the transistor 117 at a set frequency and for a set on-voltage time is output from the gate driver circuit 113. As an example, as shown in Fig. 18(a), the on-off cycle of the transistor 117 is tcycle, the on-time is ton, and the off-time is toff.

[0370] In this specification and the drawings, a transistor 117s and a transistor 117m are connected in series as an example of the semiconductor element component 117. Also in Fig. 18, the operation of the transistor 117m or the transistor 117s, and the operation of the diode Ds or the diode Dm are described.

[0371] During a period tn2 before the transistor 117 is turned on, the Vt voltage is set to a voltage more negative than the off voltage, and during a period tn1 after the transistor 117 is turned off, the Vt voltage is set to a voltage more negative than the off voltage. The Vt voltage is a voltage lower than 0 (V) and higher than -4 (V). Therefore, Vt is a voltage equal to or higher than -4 (V) and lower than 0 (V). When the transistor 117 is made of SiC, the off-voltage is set to the Vt voltage, and when the transistor 117 is made of IGBT, the off-voltage is set to 0 (V).

[0372] As described above, the semiconductor device testing apparatus of the present invention is configured so that the off-voltage supplied to transistor 117 can be changed according to the type of transistor 117 to be tested.

[0373] 1 and 11, the off voltage is configured to be able to select 0 (V) or the Vt voltage by the voltage selection circuit 302 (voltage selection circuit 302m, voltage selection circuit 302s). The selection of the voltage is performed by the controller circuit board 111 or the device control circuit board 209.

[0374] When the Vt voltage is applied, St1 (St2) is set to the H level to measure the temperature of the transistor 117. While the Vt voltage is being applied, a constant current Ic is caused to flow through the diode Di. In addition, while St1 (St2) is at the H level, the constant current Ic is also caused to flow.

[0375] By applying the Vt voltage to the gate terminal of the transistor 117, the off state of the transistor 117 becomes stable, and the temperature information Tj can be stably measured. In addition, noise is less likely to be introduced during measurement of the temperature information Tj, improving the measurement accuracy of the temperature information Tj. In addition, the falling rate time of the gate signal Vsg becomes faster, and the uncertain time of the on / off of the transistor 117 becomes shorter.

[0376] By applying the Vt voltage to the gate terminal of the transistor 117, the leakage current of the transistor 117 is reduced, the measurement accuracy of the Vi voltage is improved, and the measurement is stabilized.

[0377] The gate signal Vgs is set to the voltage Vt during the times tn1 and tn2. As an example, the times tn1 and tn2 are from 0.2 ms to 2 ms. The transistor 117 is turned off at 0V.

[0378] Therefore, three voltages, Vg, 0 (V), and Vt, are applied to the gate terminal g of the transistor 117. During the period in which Vt is being applied, a current is caused to flow through the diode Di of the transistor, and temperature information Tj is measured.

[0379] In Fig. 18, as an example, Vg is the on voltage, and 0 (V) or Vt voltage is the off voltage. As shown in Fig. 18(a), a negative voltage may be applied before the application of the on voltage Vg, and after it changes from the on voltage to the off voltage, it may be set to 0 (V). As shown in Fig. 18(a), the application period of the Vt voltage may be eliminated, and a voltage of 0 (V) may be applied. In the present invention, the values ​​or control of the on voltage and off voltage are appropriately set according to each case.

[0380] 18(a), the transistor 117 is controlled to be turned on and off. The gate driver circuit 113 is controlled by a device control circuit board 209. The power supply circuit 121 outputs a constant current Id, which is supplied as Id to the transistor 117 .

[0381] The transistor 117 is turned on and off by the Vsg signal voltage output from the gate driver circuit 113, and a current Id flows between the channels of the transistor 117 while the transistor 117 is on.

[0382] A variable resistance circuit 125 is provided at the output of the gate driver circuit 113. The value of the variable resistance circuit 125 is configured so that it can be set to a predetermined value or in steps between 0 (Ω) and 500 (Ω). The value of the variable resistance circuit 125 may be set by a control signal from the controller circuit board 111 (controller 111) while observing the waveform of the gate terminal g.

[0383] A resistor R (not shown) may be disposed between the gate terminal g and the emitter terminal e or the collector terminal c of the transistor 117 (transistor 117s, transistor 117m). By adjusting the value of the resistor R, the inclination angles of the rising and falling voltage waveforms of the gate signal can be adjusted.

[0384] When the value of the variable resistance circuit 125 is large, the slope of the rising / falling waveform of the gate signal of the transistor 117 applied to the gate terminal of the transistor 117 becomes gentler.

[0385] On the other hand, when the resistance value of the variable resistance circuit 125 is small, the slope of the rising / falling waveform of the gate signal becomes steeper. By changing the resistance value of the variable resistance circuit 125 or setting it to a predetermined value, the on-time of the transistor 117 (transistor 117m, transistor 117s) can be adjusted.

[0386] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) in the gate voltage applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on time of the transistor 117 (transistor 117m, transistor 117s) can be arbitrarily adjusted.

[0387] The resistance value of the variable resistance circuit 125 is set by the controller circuit board 111 (controller 111). The setting is not limited to a constant value. The slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate driver circuit 113 may be changed. The resistance value at the rising edge and the resistance value at the falling edge of the gate signal may be changed. The resistance value may also be variably controlled in real time. By variably controlling the variable resistance circuit 125, the on-time of the transistor 117 (transistor 117m, transistor 117s) is stabilized.

[0388] When the resistance value at the rising edge of the gate signal is reduced, the waveform of the on-voltage applied to the gate terminal g of the transistor 117 (transistor 117m, transistor 117s) becomes steeper, and the transistor 117 (transistor 117m, transistor 117s) turns on quickly. When the resistance value at the rising edge of the gate signal is increased, the waveform of the on-voltage applied to the gate terminal of the transistor 117 becomes gentler, and the transistor 117 turns on gently.

[0389] When the resistance value at the falling edge of the gate signal is reduced, the waveform of the on-voltage applied to the gate terminal g of the transistor 117 (transistor 117m, transistor 117s) becomes steeper, and the transistor 117 quickly turns off. When the resistance value at the falling edge of the gate signal is increased, the waveform of the on-voltage applied to the gate terminal g of the transistor 117 becomes gentler, and the transistor 117 turns off slowly.

[0390] As described above, the value of the variable resistance circuit 125 connected to the gate terminal of the transistor 117 (transistor 117m, transistor 117s) or the rise time / fall time of the gate driver circuit 113 can be controlled, adjusted, or set.

[0391] Therefore, the gate driver circuit 113 has the function of changing or modifying the inrush current Is and surge voltage Vs generated in the transistor 117 (transistor 117m, transistor 117s).

[0392] It goes without saying that the operation of transistor 117 (transistor 117m, transistor 117s) can be controlled not only by controlling the on-voltage of gate terminal g of transistor 117 (transistor 117m, transistor 117s), but also by changing or setting the value of constant current Id or voltage Vm supplied to transistor 117 (transistor 117m, transistor 117s) by power supply circuit 121. The variable resistance circuit 125 on the output side of the gate driver circuit 113 is controlled by the controller circuit board 111 .

[0393] 18, a gate signal Vsg output by a gate driver circuit 113 has a cycle time tcycle, an on time ton, and an off time toff controlled by a gate signal control circuit 112, and the gate signal is applied to a gate terminal of a transistor 117. The gate signal control circuit 112 is controlled by a controller circuit board 111 (controller 111).

[0394] 1, the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 is variable, but this is not limiting. For example, it goes without saying that the variable resistance circuit 125 may be an external resistor, and the resistor may be connected to the gate terminal g of the transistor 117 (transistor 117m, transistor 117s) by a connector (not shown) or the like.

[0395] The value of the resistor to be connected is set by observing the waveform of the gate terminal g of the transistor 117 (transistor 117m, transistor 117s) and the waveform of the channel current Id.

[0396] 1 and 11, a constant current circuit including a constant current setting circuit 130 and the like is connected to the cathode terminal k (cathode terminal ks, cathode terminal km) and anode terminal a (anode terminal as, anode terminal am) of the diode D (diode Ds, diode Dm) of the transistor 117. The constant current circuit passes a predetermined constant current Ic (constant current Ics, constant current Icm). The constant current Ic is for monitoring the temperature of the transistor 117 (transistor 117s, transistor 117m).

[0397] In order to illustrate the present specification using an IGBT, the terminals of the transistor 117 (transistor 117m, transistor 117s) are a gate terminal g, a collector terminal c, and an emitter terminal e. In the case of a MOS transistor 117, the terminals of the transistor 117 (transistor 117m, transistor 117s) are a gate terminal g, a drain terminal d, and a source terminal s.

[0398] The diode D may be a diode of a separate semiconductor chip mounted on the semiconductor chip on which the transistors 117 (transistor 117m, transistor 117s) are formed.

[0399] The diode D may be a parasitic diode formed secondarily during the formation of the transistor 117. The parasitic diode is formed secondarily due to the layer structure of the transistor 117. The diode D is formed near the channel portion of the transistor 117 due to its structure.

[0400] The diode D may be any element that does not operate when the transistor 117 is operating. For example, it is not limited to a diode, and it goes without saying that a transistor connected as a diode may also be used.

[0401] The device is not limited to a semiconductor such as a diode, but may be a device such as a resistor. A constant current Ic is applied to a device such as a resistor to measure the terminal voltage of the resistor. This voltage is measured as voltage Vi.

[0402] As described above, the element for acquiring the temperature may be not only a semiconductor device such as the diode D, but also a resistor or other device. In other words, any device that can acquire a voltage value by passing a current or a current value by applying a voltage can be used.

[0403] The resistance value of diode D changes due to heat generation by transistor 117. When a constant current Ic flows through diode D, the voltage between the terminals of diode D changes in proportion to the change in the resistance value of diode D. By monitoring or measuring the voltage between the terminals, the temperature or temperature change of transistor 117 and the deterioration state of transistor 117 can be known. In order to monitor the temperature of the transistor 117 from the voltage of the diode D, it is necessary to obtain the temperature coefficient in advance.

[0404] The temperature coefficient is measured by setting the transistor 117 at a predetermined temperature in a thermostatic chamber, passing a constant current Ic through the diode D, and measuring the terminal voltage of the diode D. The terminal voltage of the diode with respect to temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode D. Therefore, the temperature coefficient K of the transistor 117 can be obtained from the terminal voltage of the diode D with respect to temperature.

[0405] The temperature coefficient K may differ for each production lot of the transistor 117, but generally it is a constant value for each production lot. Therefore, if the transistor 117 to be tested is sampled from each production lot and the temperature coefficient K is calculated, the temperature coefficient K can be used for the other transistors 117.

[0406] To obtain the temperature coefficient K with high accuracy, the temperature coefficient K of each transistor 117 is measured and tested individually, even for the same lot. Measurement of the temperature coefficient K is not limited to using a thermostatic bath. For example, the temperature coefficient K is obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted.

[0407] During testing, a test current Id is intermittently applied to the transistor 117. Immediately after the test current Id is turned off, or after a short, predetermined time has elapsed after the test current Id is turned off, a constant current Ic for temperature measurement is caused to flow.

[0408] In order to prevent the constant current Ic from heating the transistor 117 or to avoid any influence of the constant current Ic, the constant current Ic is set to a current value sufficiently smaller than the constant current Id passed through the channel of the transistor 117. The constant current Id is set to a current value that does not generate heat that would affect the temperature measurement.

[0409] Specifically, the constant current Ic is set to 1 / 1000 or less of the current Id flowing through the transistor 117 during testing. Preferably, the current Ic flowing through the transistor 117 is set to 1×10 6 1 or more 1×10 4 The constant current Ic should be between 0.1mA and 100mA.

[0410] The channel current Id is changed and the voltage of the diode D is measured to obtain the temperature coefficient K. The obtained temperature coefficient K is stored in a temperature measurement circuit (not shown) or the controller circuit board 111.

[0411] When measuring temperature, if the diode D is formed on the same chip as the transistor 117, the saturation voltage may change depending on the gate signal Vsg. It is preferable that the gate signal Vsg be zero (0) voltage or a negative voltage (minus voltage).

[0412] 22, based on the temperature information Tj, the controller circuit board 111 (controller 111) controls the chiller 136. The chiller 136 adjusts the temperature of the circulating water (circulating solution), and adjusts the temperature of the heating and cooling plate .

[0413] In the above embodiment, the temperature coefficient K is calculated in advance, but the semiconductor testing method of the present invention is not limited to this. Temperature information Tj of the transistor 117 is calculated from the temperature coefficient and the diode terminal voltage, etc. The transistor 117 is disposed in close contact with the heating / cooling plate 134 , and the temperature of the heating / cooling plate 134 is configured to be approximately equal to that of the transistor 117 .

[0414] The controller circuit board 111 (controller 111) controls the chiller 136 to set the temperature of the heating / cooling plate 134 to a predetermined temperature, applies a constant current Ic to the transistor 117, and measures the terminal voltage of the diode D.

[0415] From the measurement results, the temperature coefficient K is obtained. The temperature of the heating / cooling plate 134 is set to a plurality of temperatures, the temperature coefficient K is obtained at each temperature, and the accuracy of the temperature coefficient value is improved from the results.

[0416] The temperature coefficient K is obtained by heating the transistor 117 to a predetermined temperature using the heating / cooling plate 134, passing a constant current Ic through the diode D, and measuring the terminal voltage. The terminal voltage of the diode D versus temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode D. Therefore, the temperature coefficient K of the transistor 117 can be obtained from the terminal voltage of the diode D versus temperature. A temperature measurement circuit (not shown) obtains temperature information Tj of the transistor 117 being tested from the stored temperature coefficient K and voltage Vi.

[0417] The obtained temperature information Tj is sent to the controller circuit board 111 (controller 111). When the temperature information Tj becomes equal to or greater than a predetermined set value, the controller circuit board 111 (controller 111) determines that the transistor 117 is in a predetermined stress state or deteriorated state, and changes the control of the test or stops the test.

[0418] In most cases, the parts of the transistor that deteriorate during testing are the junctions within the transistor 117. The semiconductor itself does not deteriorate, but the junctions (bonding, die bonding, etc.) of the transistor 117 deteriorate, causing the resistance value of the junctions to increase. As the resistance value increases, the channel-to-channel voltage Vce increases, generating heat and raising the temperature of the transistor 117.

[0419] When the semiconductor element part 117 (transistor 117) deteriorates, it is often the deterioration of the gate oxide film (insulating film) of the transistor 117. When the deterioration of the gate oxide film occurs, the oxide film (insulating film) is short-circuited, and the channel voltage Vce drops. Alternatively, the transistor 117 is turned off, no current flows through the transistor 117, and the channel voltage Vce rises to the maximum value of the power supply voltage.

[0420] At the start of the test, the temperature information Tj varies between the minimum temperature T1 and the maximum temperature T2. When the transistor 117 is subjected to stress by the test, the channel-to-channel voltage Vce of the transistor 117 varies, and the temperature information Tj normally varies in the increasing direction. Therefore, as shown in FIG. 19(c), the minimum temperature rises above temperature T1, and the maximum temperature approaches temperature information Tm (Tjmax). In the semiconductor testing method of the present invention, the test is terminated under any of the following conditions: When the temperature information Tj is outside the specified range. When the channel voltage Vce falls outside the specified voltage range. If the thermal resistance is outside the specified range.

[0421] 18(d) St2 is a timing signal for causing a current Ic to flow through diode D (diode Ds, diode Dm), and when St2 is at H level, a current flows through diode D of transistor 117. A voltage detection circuit 129 acquires a terminal voltage of diode D, and a temperature measurement circuit (not shown) converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) tests the transistor 117 (semiconductor element component 117) in accordance with the temperature information Tj.

[0422] A current Id is a current flowing through the transistor 117 to be tested, and is a current output from the power supply circuit 121. St1 and St2 are the time for which a measurement current is passed through a diode for temperature measurement, or the time for which the temperature is measured.

[0423] 18(e) Ssa is the on / off signal of the switch circuit 124a or the switch circuit 124c and the switch circuit 124d, and FIG. 18(f) Sab is the on / off signal of the switch circuit 124b. It is also possible to omit the switch circuit 124a and turn on the switch circuits 124c and 124d simultaneously. Von is the voltage that turns on the switch circuit 124, and 0 (V) is the voltage that turns off (opens) the switch circuit 124.

[0424] In FIG. 18(g), Vce indicates the channel voltage of the transistor 117 (transistor 117m, transistor 117s), and temperature information Tj indicates the measured temperature change of the transistor 117 (transistor 117m, transistor 117s).

[0425] 18(a), a gate signal Vsg is applied from the gate driver circuit 113 to the gate terminal g of the transistor 117. The gate signal Vsg has a cycle time tcycle and an on-time ton. The cycle time tcycle and the on-time ton can be set to any value by the gate signal control circuit 112. The on-voltage Vg can also be set to any voltage.

[0426] 18(i) Si is a timing signal for measuring the current flowing through the variable resistance circuit 125. When Si is at H level, the current (gate leakage current) flowing through the variable resistance circuit 125 is measured. FIG. 18(c) St1 is a timing signal for causing a current Ic to flow through the diode D (diode Ds, diode Dm) in the embodiment shown in FIG.

[0427] 18(d) shows that when St2 is at H level, a current flows through the diode Ds or Dm of the transistor 117. This is a case where a constant current Ic flows through a device (diode) independent of the transistor 117 to obtain temperature information Tj.

[0428] For ease of understanding, the measured temperature information Tj will be described as changing between T1 and T2 as shown in Fig. 18(h). The temperature information Tj increases when a current is passed through the transistor 117, and decreases when the current is stopped. The temperature information Tj also changes with the change in the characteristics of the transistor 117.

[0429] 18(f) Ssa indicates the timing of the on / off control signal for the switch circuit 124a. When Ssa is Von, the switch circuit 124a is closed (on). When Ssa is 0, the switch circuit 124a is opened (off), and the application of current or voltage is cut off.

[0430] Figure 18(e) Ssb shows the timing of the on / off control signal for the switch circuit Ssb. When Ssb is Von, the switch circuit Ssb is closed (on). When Ssb is 0, the switch circuit Ssb is open (off).

[0431] 18(g), Vce is the channel voltage (the voltage between the emitter terminal and the collector terminal) of the transistor 117. Although not shown in the figure for ease of understanding, a surge voltage and a surge current are generated as the transistor 117 is turned on and off, and the Vce waveform changes in a complex manner over time as the on-resistance of the transistor 117 changes.

[0432] Three voltages, Vg, 0 (V), and Vt, are applied to the gate terminal g of the transistor 117. During the period in which Vt is being applied, a current is caused to flow through the diode D of the transistor, and temperature information Tj is measured. When the constant current Ic is made to flow through the diode D, the switch circuit Ssa is turned off so that the current from the power supply circuit 121 is not applied to the transistor 117 .

[0433] A terminal voltage of the diode D is obtained by passing a constant current Ic through the diode D, and the operational amplifier circuit 116 outputs a voltage Vi corresponding to the terminal voltage. The voltage Vi is input to a temperature measurement circuit (not shown), which obtains temperature information Tj corresponding to the temperature of the transistor 117.

[0434] The temperature information Tj is transferred to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) controls the test of the transistor 117 (semiconductor element component 117) by continuing, stopping, changing conditions, etc. of the test of the transistor 117 based on the temperature information Tj.

[0435] Switch circuit 124 b is turned on with a delay of tm2 from when the Vsg signal of the transistor 117 becomes Vg. The time tm2 can be changed and set by the controller circuit board 111 (controller 111).

[0436] The switch circuit 124a turns on a time tb2 before the switch circuit 124b turns on. The on state of the switch circuit 124a is maintained until tb1 after the switch circuit 124b turns on. The times tb2 and tb1 can be changed independently. In particular, the setting of tb1 is important. The time tb1 is set or changed appropriately by observing the waveform of the Vce voltage of the transistor 117.

[0437] The switch circuit 124b is turned off a time tm1 before the Vsg signal of the transistor 117 reaches Vt. The time tm1 is configured to be changeable and set by the controller circuit board 111 (controller 111).

[0438] The switch circuit 124a turns on a time ta2 before the switch circuit 124b turns off. The on state of the switch circuit 124a is maintained until ta1 after the switch circuit 124b turns off. The ta2 and ta1 times can be changed independently. In particular, the setting of ta1 is important. The time ta1 is set or changed appropriately by observing or measuring the waveform of the Vce voltage of the transistor 117.

[0439] When the switch circuit Ssb is turned on, the output terminal of the power supply circuit 121 is shorted to the ground (ground line), and the electric charge is discharged. As a result of the electric charge being discharged, the terminal voltage of the power supply circuit 121 becomes 0 (V) (ground voltage). In addition, the current Id output by the power supply circuit 121 is caused to flow to the ground as a current Im. Therefore, the current Id is not applied to the transistor 117, and the collector voltage of the transistor 117 does not rise.

[0440] The time tb2 is set by observing or measuring the time when the output voltage of the power supply circuit 121 becomes 0 (V) or close to 0 (V), or the time when the output voltage of the power supply circuit 121 becomes lower than the collector voltage of the transistor 117.

[0441] At the time when the above voltage relationship reaches a predetermined value (after tb2 has elapsed), the switch circuit 124b is turned on to apply the current Id from the power supply circuit 121. However, since the switch circuit 124a is on at this time, the current Id from the power supply circuit 121 flows to the ground (ground line) as the current Im via the switch circuit 124a. Therefore, the constant current Id does not flow through the transistor 117. After the switch circuit 124 b is turned on and a time tb1 has elapsed, the switch circuit 124 a is turned off and the test current Id is supplied to the transistor 117 .

[0442] By operating the switch circuits 124a and 124b as described above, the surge voltage Vs or the inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or the inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0443] When the test current Id to the transistor 117 is stopped, the switch circuit 124a is turned on before the switch circuit 124b is turned off (ta2). The constant current Id output by the power supply circuit 121 flows to the ground as the current Im or Im' via the switch circuit Ssa and is not supplied to the transistor 117.

[0444] The time ta2 is set by observing the time when the output voltage of the power supply circuit 121 becomes 0 (V) or close to 0 (V), or the time when the output voltage of the power supply circuit 121 becomes lower than the collector voltage of the transistor 117.

[0445] At the time when the above voltage relationship reaches a predetermined value (after ta2 has elapsed), the switch circuit 124b is turned off. After the time ta1 has elapsed since the switch circuit 124b was turned off, the switch circuit 124a is turned off.

[0446] By operating or controlling the switch circuits 124a and 124b as described above, the surge voltage Vs or inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0447] When the constant current Id is supplied to the transistor 117, the temperature information Tj increases. When the constant current Id to the transistor 117 is stopped, the temperature information Tj decreases. The temperature information Tj fluctuates between T1 and T2. When the characteristics of the transistor 117 fluctuate due to the test, the temperature information Tj gradually increases. In order to apply a constant current Id to the transistor 117, the power supply circuit 121 is operated to apply the current Id to the transistor 117.

[0448] It is also possible to set the resistance value of the variable resistor circuit 125 of the gate driver circuit 113. By increasing the resistance value, the rising / falling waveform of the gate signal Vsg can be changed as shown by the dotted line or the dashed line in FIG.

[0449] By changing or setting the gate signal Vsg, the current Id flowing through the transistor 117 can also be changed as shown by the dotted line or the dashed dotted line in FIG. 19(b). By changing the rising and falling waveforms of the current Id, it is possible to adjust or suppress the surge voltage or inrush current.

[0450] As shown in FIG. 19(c), the temperature information Tj changes from a solid line to a dotted line and from a dotted line to a dashed line as the characteristics of the transistor 117 change due to the test. The test is stopped when the temperature information Tj reaches the level of Tm. Alternatively, the test is stopped when the rate of change of the temperature information Tj reaches a predetermined value. In addition, the test conditions are changed.

[0451] 20, when the switch circuit Ssa (switch circuit 124a) is in the off state, the St1 signal is set to H and temperature information Tj is measured. The St1 signal is set to H level when the gate signal is Vt. In the tn2 period, the signal is set to H level during the tc2 period and temperature information Tj is measured. In the tn1 period, temperature information Tj is measured during the tc1 period.

[0452] The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped. Stopping the test, changing the conditions, changing the control, etc. are determined based on the temperature information Tj measured during the period tc2 and the temperature information Tj measured during the period tc1.

[0453] If the rate of change of the temperature information Tj measured during the tc1 period is larger than that of the temperature information Tj measured during the tc2 period, or if the difference in absolute value between the temperature information Tj measured during the tc1 period and the temperature information Tj measured during the tc2 period is large, the test is controlled and changed in response to the measurement value temperature information Tj.

[0454] Moreover, if the temperature information Tj measured during the period tc2 differs from the standard value by a predetermined value, it is determined whether there is a problem with the connection state of the transistor 117 or the test equipment, and a decision is made to "not start the test", etc. During the period tc2 or tc1, Vi is measured multiple times, and temperature information Tj for Vi is obtained.

[0455] For ease of explanation, the operation and configuration of Fig. 8(b) will be described as an example. Fig. 8(b) shows an example in which a test is performed by connecting a transistor 117s as a diode and applying a gate signal Vsgm to a gate terminal gm of a transistor 117m. The temperature of the semiconductor element part 117 will be described as being measured by a diode Dm. A gate signal is applied to the gate terminal of the transistor 117 under test with a period tcycle, an on time ton and an off time toff.

[0456] An off voltage (0 (V)) and an on voltage (Vg) are applied to the gate terminal gm of the transistor 117m to control the transistor 117m. However, during a period tn2 before the transistor 117m is turned on, the Vt voltage may be set to a more negative voltage than the off voltage. Also, during a period tn1 after the transistor 117m is turned off, the Vt voltage may be set to a more negative voltage than the off voltage. The Vt voltage is a voltage lower than 0 (V) and higher than -4 (V). Therefore, Vt is a voltage equal to or higher than -4 (V) and lower than 0 (V).

[0457] In addition, when the transistor 117m is SiC, the off voltage is the Vt voltage, and when it is an IGBT, the off voltage is 0 (V). As described above, the semiconductor device testing device of the present invention is configured so that the off voltage supplied to the transistor 117m can be changed according to the type of the transistor 117 to be tested. The Vt voltage is set by setting the Vmm1 voltage of the gate driver circuit 113m.

[0458] When the transistor to be turned on and off is the transistor 117s, the Vt voltage is set or adjusted by setting or adjusting the Vms1 voltage of the gate driver circuit 113s. The diode Dm is connected to a cathode terminal km and an anode terminal am. Temperature information Tj of the diode Dm is measured at the timing of St2 in FIG.

[0459] In the embodiment of FIG. 1, the diode Dm is separated from the path through which the constant current Id flows. Even when the current Id flows through the transistor 117m, the constant current Icm can be passed through the diode. Therefore, the time for measuring the temperature information Tj can be set flexibly. As shown in FIG. 18(d), the positions of tcs and tcm can be set freely.

[0460] 18(d) is a timing signal for causing a current Icm to flow through the diode Dm. When St2 is at H level, a constant current Icm flows through the diode Dm of the transistor 117m. A voltage detection circuit 129m obtains a terminal voltage Vim of the diode Dm, and a temperature measurement circuit (not shown) converts the terminal voltage Vim into temperature information Tj.

[0461] The temperature information Tj is sent to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) performs, stops, or changes control of the test of the transistor 117 according to the temperature information Tj. The temperature information Tj is sent to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) performs the test of the transistor 117 based on the temperature information Tj.

[0462] The above embodiment has been described by taking as an example the semiconductor element component 117 in Fig. 31. In the semiconductor element component 117 in Fig. 31, the terminal of the diode D (diode Ds, diode Dm) is formed independently of the transistor 117m or transistor 117s. The semiconductor device testing apparatus and semiconductor device testing method of the present invention can also be applied to the semiconductor device part 117 of FIG.

[0463] 32(a) and 32(b), a diode Dim for measuring temperature is formed or placed between the emitter terminal em and the collector terminal cm of a transistor 117m, and a diode Dis for measuring temperature is formed or placed between the emitter terminal es and the collector terminal cs of a transistor 117s.

[0464] The semiconductor element component 117 in Fig. 32(a) and Fig. 32(b) includes a transistor 117m and a transistor 117s built in one package, similar to the semiconductor element component 117 in Fig. 31. The transistor 117s and the transistor 117m are connected in series.

[0465] 32(a) and 32(b), a semiconductor element component 117 in which a transistor 117m and a transistor 117s are built into one package is illustrated as an example of the semiconductor element component 117. The transistor 117s and the transistor 117m are connected in series.

[0466] 32(c) and 32(d) show an example in which an electrode terminal 226c2 of a transistor 117s and an electrode terminal 226c1 of a transistor 117m are electrically connected by wiring or the like to constitute one semiconductor element component 117.

[0467] The semiconductor device testing apparatus or testing method described in this specification can be applied to any of Figures 32(a), 32(b) and 32(c) and 32(d). It goes without saying that the present specification can also be applied to a configuration in which only the transistor 117s or only the transistor 117s is used.

[0468] 32, a semiconductor element part 117 has electrode terminals (P electrode terminal, O electrode terminal, N electrode terminal) to which a large current is applied or output. A transistor 117m has a built-in diode Dim. A transistor 117s has a built-in diode Dis. The diode Di (diode Dim, diode Dis) is formed simultaneously with the formation process of the transistor 117.

[0469] For example, the semiconductor layer of the diode Di is a layer common to the transistor 117 (the transistor 117m and the transistor 117s). Also, the insulating layer and the like are common layers.

[0470] 32(a) and 32(b), the semiconductor element part 117 has a P electrode terminal (electrode terminal 226a), an O electrode terminal (electrode terminal 226c), and an N electrode terminal (electrode terminal 226b). The emitter terminal em of the transistor 117m is connected to the N electrode terminal, the collector terminal es of the transistor 117s is connected to the P electrode terminal, and the collector terminal of the transistor 117m is connected to the O electrode terminal.

[0471] The transistor 117m has an emitter terminal em, a gate terminal gm, and a collector terminal cm. The collector terminal cm of the transistor 117m is shared with the emitter terminal es of the transistor 117s. The diode Dim has a cathode terminal connected to the collector terminal cm of the transistor 117m and an anode terminal connected to the emitter terminal em of the transistor 117m.

[0472] The transistor 117s has an emitter terminal es, a gate terminal gs, and a collector terminal cs. The transistor 117m has an emitter terminal em, a gate terminal gm, and a collector terminal cm.

[0473] The voltage generated between the N electrode terminal 226b and the O electrode terminal 226c of the semiconductor element component 117 is the channel-to-channel voltage Vcem of the transistor 117m, and the voltage generated between the P electrode terminal 226a and the O electrode terminal 226c of the semiconductor element component 117 is the channel-to-channel voltage Vces of the transistor 117s.

[0474] 11 and 12, a connector 202m is connected to terminals (terminals em, gm, and cm) of the transistor 117m, and a connector 202s is connected to terminals (terminals es, gs, and cs) of the transistor 117s.

[0475] As shown in FIG. 11, a fork plug 205e is connected to the P electrode terminal (electrode terminal 226a), a fork plug 205h is connected to the O electrode terminal (electrode terminal 226c), and a fork plug 205c is connected to the N electrode terminal (electrode terminal 226b).

[0476] A predetermined constant current is applied to at least one of the diodes Dim and Dis. The equivalent resistance of the diode changes with temperature, and the application of a predetermined constant current changes the terminal voltage of the diode Di. Temperature information Tj is obtained from the information on this terminal voltage Vi.

[0477] 11, a short circuit 137m is formed between the gate terminal gm and the emitter terminal em of the transistor 117m, and a short circuit 137s is formed between the gate terminal gs and the emitter terminal es of the transistor 117s.

[0478] The difference between the configuration in Fig. 11 and the configuration in Fig. 1 is that in Fig. 11, a constant current circuit is configured to pass a constant current Icm through the diode Dim of transistor 117m, and the terminal voltage of diode Dim is measured by the voltage between the collector terminal cm and emitter terminal em of transistor 117m. Also, a constant current circuit is configured to pass a constant current Ics through the diode Dis of transistor 117s, and the terminal voltage of diode Dis is measured by the voltage between the collector terminal cs and emitter terminal es of transistor 117s.

[0479] When a constant current is to flow through the diode Di, the transistor 117 is turned off. The constant current Icm to the diode Dim is supplied as a current drawn from the transistor Tm. The constant current Ics to the diode Dis is supplied as a current drawn from the transistor Ts.

[0480] The terminal voltage of the diode Dim is measured or obtained by a voltage detection circuit 129m connected to the collector terminal cm and emitter terminal em of the transistor 117m. The terminal voltage of the diode Dis is measured or obtained by a voltage detection circuit 129s connected to the collector terminal cs and emitter terminal es of the transistor 117s.

[0481] The voltage at the emitter terminal es of transistor 117s is the voltage at the N electrode terminal plus the channel-to-channel voltage Vcem of transistor 117m. When the channel-to-channel voltage Vcem of transistor 117m fluctuates, the voltage at the emitter terminal es of transistor 117s also fluctuates, and the anode voltage of diode Dis also fluctuates. Similarly, when the N electrode terminal voltage fluctuates, the anode voltage of diode Dim also fluctuates.

[0482] In the configuration of the present invention shown in Fig. 11, the current detection circuit 128, the voltage detection circuit 129, the constant current setting circuit 130, etc. are insulated from the circuit voltage Vc and are configured in a floating state, as in Fig. 1. Therefore, the terminal voltage of the diode Dis can be measured or obtained without any problem even if the emitter terminal em voltage of the transistor 117m fluctuates or shifts. The same is true for the terminal voltage of the variable resistance circuit 125.

[0483] The isolated DC-DC converter circuit 138 will be described as generating various voltages from the circuit voltage Vc, but is not limited to this. Needless to say, other voltages may be generated from multiple voltages including the circuit voltage Vc.

[0484] Other configurations are the same as those in Fig. 1, and therefore description thereof will be omitted. Also, the driving method in Fig. 4 can be applied to the configuration of the transistor 117 in Fig. 32, and therefore description thereof will be omitted.

[0485] Fig. 12 is a configuration diagram corresponding to Fig. 2 in the first embodiment of the present invention. Fig. 9 and Fig. 2 are similar except for the configuration and terminals of the transistor 171 in Fig. 9, so a description thereof will be omitted.

[0486] In the semiconductor device component 117 in Fig. 32, the N electrode terminal of the transistor 117 is connected to AGND, similarly to the semiconductor device component 117 in Fig. 31. AGND is, for example, a ground potential.

[0487] The emitter terminal em of the transistor 117m is electrically connected to the N electrode terminal, and the emitter terminal em is also connected to the Vmm1 terminal. The emitter terminal em is also connected to the Vmm2 terminal. The emitter terminal es of the transistor 117s is also connected to the Vms1 terminal. The emitter terminal es is also connected to the Vms2 terminal. The potential of the emitter terminal es of the transistor 117s becomes a voltage obtained by adding the channel voltage Vcem of the transistor 117m to the potential of the N electrode terminal.

[0488] The gate signal Vsg applied to the gate terminal gm of the transistor 117m is based on the potential of the emitter terminal em. As shown in FIG. 18(a), if the voltage that turns on the transistor 117m is Vg, when the voltage Vg is applied from the AGND potential of the N electrode terminal, the transistor 117m turns on.

[0489] In FIG. 18(a), the 0 (V) potential is a voltage that turns off the transistor 117m. The Vt1 voltage is a voltage that is more negative than the 0 (V) potential. The negative Vt1 voltage is applied based on the Vmm1 voltage. Note that in FIG. 18(a) and other figures, the Vt1 voltage is illustrated as the Vt voltage.

[0490] A diode Dim is connected between the collector terminal cm and the emitter terminal em of the transistor 117m. A voltage detection circuit 129m is disposed between the collector terminal cm and the emitter terminal em.

[0491] A diode Dis is connected between the collector terminal cs and the emitter terminal es of the transistor 117s. A voltage detection circuit 129s is disposed between the collector terminal cs and the emitter terminal es. FIG. 13 is an explanatory diagram for explaining wiring of a power supply system of a semiconductor device testing apparatus in the second embodiment of the present invention. The N electrode terminal of the transistor 117 is connected to AGND, which is, for example, the earth potential.

[0492] The emitter terminal em of the transistor 117m is electrically connected to the N electrode terminal, and the emitter terminal em is also connected to the Vmm1 terminal and the Vpm2 terminal. The emitter terminal es of the transistor 117s is connected to the Vms1 terminal, and the emitter terminal es is also connected to the Vps2 terminal.

[0493] As shown in FIG. 13, by changing the power supply voltage to be connected, it is possible to flexibly test semiconductor element components 117 in which the polarity of the terminal voltage is changed or different.

[0494] 13, the present invention provides a circuit for switching between wiring symbols a and b by arranging a changeover switch circuit 127 (changeover switch circuit 127s, changeover switch circuit 127m) and the like. Semiconductor element components 117 having diodes D with different polarities can also be easily tested.

[0495] Similarly, the wiring between the gate terminal g and the emitter terminal e of the transistor 117m and the transistor 117s is configured to be interchangeable by the changeover switch circuit 127. This is effective when changing the logic of the on-voltage and off-voltage of the transistor 117. It goes without saying that the above items can be applied to the other embodiments.

[0496] A constant current Icm flows through the diode Dim during a period when the constant current Id does not flow through the transistor 117m. The constant current Icm flows from the emitter terminal em to the collector terminal cm of the transistor 117m. Therefore, the power supply voltage is Vpm2 on the positive side and Vmm2 on the negative side.

[0497] A constant current Ics flows through the diode Dis during a period when the constant current Id does not flow through the transistor 117s. The constant current Ics flows from the emitter terminal es to the collector terminal cs of the transistor 117s. Therefore, Vps2 is the positive side and Vms2 is the negative side of the power supply voltage.

[0498] The potential of the emitter terminal es of the transistor 117s is a voltage obtained by adding the channel voltage Vcem of the transistor 117m to the potential of the N electrode terminal. Therefore, the potential of the emitter terminal es of the transistor 117s changes depending on the on / off state of the transistor 117m and the magnitude of the constant current Id.

[0499] The gate signal Vsg applied to the gate terminal gm of the transistor 117m is based on the potential of the emitter terminal em. As shown in FIG. 18(a), if the voltage that turns on the transistor 117m is Vg, when the voltage Vg is applied from the AGND potential of the N electrode terminal, the transistor 117m turns on.

[0500] In FIG. 18(a), the 0 (V) potential is a voltage that turns off the transistor 117m. The Vt1 voltage is a voltage that is more negative than the 0 (V) potential. The negative Vt1 voltage is applied based on the Vmm1 voltage. Note that in FIG. 18(a) and other figures, the Vt1 voltage is illustrated as the Vt voltage.

[0501] The current Icm flowing through the diode Dim is generated using the Vmm2 and Vpm2 voltages as power sources. Since the Vpm2 voltage is common to the Vmm1 voltage, the voltage at the terminal of the diode Dm is in the range of Vmm2 and Vpm2, and is a voltage based on AGND.

[0502] The gate signal Vsg applied to the gate terminal gs of the transistor 117s is based on the potential of the emitter terminal es, which is equal to the AGND potential of the N electrode terminal plus the channel-to-channel voltage Vcem of the transistor 117m.

[0503] As shown in FIG. 18(a), if the voltage that turns on transistor 117s is Vg, the voltage at which transistor 117s turns on is based on the voltage obtained by adding the channel-to-channel voltage Vcem of transistor 117m to the AGND potential of the N electrode terminal, and when the Vg voltage is applied, transistor 117s turns on.

[0504] The Vms1 voltage is insulated from the Vmm1 voltage and is in a floating state. Therefore, even if the channel-to-channel voltage Vcem of the transistor 117m fluctuates, the potential of the emitter terminal es of the transistor 117s fluctuates in response to the fluctuation of the channel-to-channel voltage Vcem of the transistor 117m. The Vms1 voltage generates the Vps1 voltage based on the emitter terminal es potential.

[0505] The gate signal Vsg applied to the gate terminal gs of the transistor 117s is based on the potential of the emitter terminal es. As shown in Fig. 18(a), if the voltage that turns on the transistor 117s is Vg, when the voltage Vg is applied from the potential of the emitter terminal es, the transistor 117s is turned on.

[0506] The Vt2 voltage is a voltage with a negative polarity relative to the 0 (V) potential. The negative Vt2 voltage is applied based on the Vms1 voltage. Note that in FIG. 18(a) and other figures, the Vt2 voltage is illustrated as the Vt voltage.

[0507] The current Ics flowing through the diode Dis is generated using the Vms2 and Vps2 voltages as power sources. The Vps2 voltage is common to the Vms1 voltage. The voltage at the terminals of the diode Ds is in the range of Vms2 and Vps2.

[0508] The Vms1 voltage is insulated from the Vmm1 voltage and is in a floating state. The Vms1 voltage is also connected to the collector terminal cm of the transistor 117m. Therefore, even if the channel-to-channel voltage Vcem of the transistor 117m fluctuates, the voltage (Vg) that turns the transistor 117s on and the voltage (0 (V)) that turns it off do not fluctuate. Therefore, the transistor 117s can be well controlled to be on and off.

[0509] 13, the switch circuit 123 is disposed in the power supply connection wiring. The switch circuit 123 can switch between connecting the Vms1 voltage and the Vps2 voltage, or connecting the Vms1 voltage and the Vps2 voltage. There are many different types of semiconductor device components 117 to be tested, and therefore it is necessary to match the potentials of the voltage signals applied to the semiconductor device components 117. In the present invention, by arranging or providing the switch circuit 123 as shown in FIG. 6 and FIG. 13, a wide variety of tests can be performed. As described above, the present invention is characterized in that it is configured so that the connection state of the potential generated by an isolated DC-DC converter circuit or the like can be changed.

[0510] 14 is an explanatory diagram for explaining the wiring of the power supply system of the semiconductor device testing apparatus in the second embodiment of the present invention. In the wiring of Fig. 14, the N electrode terminal of the transistor 117 is connected to AGND. As an example, AGND is the earth potential. The emitter terminal em of the transistor 117m is electrically connected to the N electrode terminal, and the emitter terminal em is connected to the Vmm1 terminal.

[0511] The emitter terminal es of the transistor 117s is connected to the Vms1 terminal. The Vmm2 terminal and the Vms2 terminal are insulated from the other power supply terminals and are in a floating state.

[0512] The current Icm flowing through the diode Dm generates the voltages Vmm2 and Vpm2 as power sources. The voltage at the terminals of the diode Dm is basically in the range of Vmm2 and Vpm2.

[0513] The current Ics flowing through the diode Ds generates the voltages Vms2 and Vps2 as power sources. The voltage at the terminals of the diode Ds is basically in the range of Vms2 and Vps2.

[0514] The potential of the Vmm2 terminal is held at a potential based on AGND, and the potential of the Vms2 terminal is held at a potential based on the potential of the emitter terminal es of the transistor 117s.

[0515] The gate signal Vsg applied to the gate terminal gm of the transistor 117m is based on the potential of the emitter terminal em. As shown in FIG. 18(a), if the voltage that turns on the transistor 117m is Vg, when the voltage Vg is applied from the AGND potential of the N electrode terminal, the transistor 117m turns on.

[0516] As shown in FIG. 18(a), if the voltage that turns on transistor 117s is Vg, the voltage at which transistor 117s turns on is based on the voltage obtained by adding the channel-to-channel voltage Vcem of transistor 117m to the AGND potential of the N electrode terminal, and when the Vg voltage is applied, transistor 117s turns on.

[0517] The Vms1 voltage is connected to the emitter terminal es, and is insulated from other voltages such as the Vmm1 voltage, and is in a floating state. Therefore, even if the channel-to-channel voltage Vcem of the transistor 117m fluctuates, the potential of the emitter terminal es of the transistor 117s fluctuates in response to the fluctuation of the channel-to-channel voltage Vcem of the transistor 117m. The Vms1 voltage generates the Vps1 voltage based on the emitter terminal es potential.

[0518] The gate signal Vsg applied to the gate terminal gs of the transistor 117s is based on the potential of the emitter terminal es. As shown in Fig. 18(a), if the voltage that turns on the transistor 117s is Vg, when the voltage Vg is applied from the potential of the emitter terminal es, the transistor 117s is turned on. Other matters have been explained in FIG. 13 and will be omitted here. Hereinafter, a method for testing the semiconductor element part 117 explained in FIG. 32 will be described with reference to FIG.

[0519] A constant current Ic (Icm, Ics) is passed through the temperature sensing diode Dim that measures the temperature of the transistor 117m and the temperature sensing diode Dis that measures the temperature of the transistor 117s when the constant current Id that is the test current is not passed through the transistor 117. Therefore, the timing at which the constant current Ic is passed is St1 in FIG. 18(c).

[0520] The resistance value of diode D changes due to heat generation by transistor 117. When a constant current Ic (Ics, Icm) flows through diode Di (Dis, Dim), the voltage across the terminals of diode Di changes in proportion to the change in the resistance value of diode Di. By monitoring or measuring the voltage across the terminals, the temperature or temperature change of transistor 117 can be known.

[0521] To obtain the temperature coefficient K with high accuracy, the temperature coefficient K of each transistor 117 is measured and tested individually, even for the same lot. Measurement of the temperature coefficient K is not limited to using a thermostatic bath. For example, the temperature coefficient K is obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted.

[0522] During testing, a test current Id is intermittently applied to the transistor 117. Immediately after the test current Id is turned off, or after a short, predetermined time has elapsed after the test current Id is turned off, a constant current Ic for temperature measurement is caused to flow.

[0523] In order to prevent the constant current Ic from heating the transistor 117 or to avoid any influence of the constant current Ic, the constant current Ic is set to a current value sufficiently smaller than the constant current Id passed through the channel of the transistor 117. The constant current Id is set to a current value that does not generate heat that would affect the temperature measurement.

[0524] When measuring temperature, if the diode Di is formed on the same chip as the transistor 117, the saturation voltage Vn may change depending on the gate signal Vsg. It is preferable that the gate signal Vsg be zero (0) voltage or a negative voltage.

[0525] When testing the transistor 117, the constant current Ic is caused to flow through the diode Di when the channel current Id is not flowing. In other words, when the transistor 117 is not turned on, the constant current Ic is caused to flow and the voltage across the diode Di is measured.

[0526] The operational amplifier circuit (buffer circuit) 116 outputs the terminal voltage Vi (terminal c-terminal e) of the diode Di. The operational amplifier circuit 116 is not limited to being composed of an operational amplifier circuit element. Any circuit having high input impedance and low output impedance may be used. A temperature measurement circuit (not shown) obtains temperature information Tj of the transistor 117 being tested from the stored temperature coefficient K and voltage Vi.

[0527] The obtained temperature information Tj is sent to the controller circuit board 111 (controller 111). When the temperature information Tj becomes equal to or greater than a predetermined set value, the controller circuit board 111 (controller 111) determines that the transistor 117 is in a predetermined stress state or deteriorated state, and changes the control of the test or stops the test.

[0528] At the start of the test, the temperature information Tj varies between the minimum temperature T1 and the maximum temperature T2. When the transistor 117 is subjected to stress by the test, the Vce voltage of the transistor 117 varies, and the temperature information Tj usually varies in the increasing direction. Therefore, as shown in FIG. 19(c), the minimum temperature rises above temperature T1, and the maximum temperature approaches temperature information Tm (Tjmax).

[0529] 18(c), St1 is a timing signal for causing a current Ic (Ics, Icm) to flow through the diode Di, and when St1 is at H level, a current flows through the diode Di of the transistor 117. The voltage detection circuit 129 acquires the terminal voltage of the diode Di, and a temperature measurement circuit (not shown) converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) tests the transistor 117 (semiconductor element component 117) in accordance with the temperature information Tj.

[0530] Id is a current flowing through the transistor 117 to be tested, and is a current output from the power supply circuit 121. St1 is a time during which a measurement current flows through the temperature measurement diode Di or a time during which the temperature is measured.

[0531] 18(e) Ssa is the on / off signal of the switch circuit 124a, and FIG. 18(f) Ssb is the on / off signal of the switch circuit 124b. Note that the switch circuit 124a may be omitted, and the switch circuits 124c and 124d may be turned on simultaneously. Von is the voltage that turns on the switch circuit 124, and 0 (V) is the voltage that turns off (opens) the switch circuit 124.

[0532] In FIG. 18(g), Vce indicates the channel voltage of the transistor 117 (transistor 117m, transistor 117s), and temperature information Tj indicates the measured temperature change of the transistor 117 (transistor 117m, transistor 117s).

[0533] 18(a), a gate signal Vsg is applied from the gate driver circuit 113 to the gate terminal g of the transistor 117. The gate signal Vsg has a cycle time tcycle and an on-time ton. The cycle time tcycle and the on-time ton can be set to any value by the gate signal control circuit 112. The on-voltage Vg can also be set to any voltage.

[0534] 18(i) Si is a timing signal for measuring the current flowing through the variable resistance circuit 125. When Si is at H level, the current (gate leakage current) flowing through the variable resistance circuit 125 is measured. FIG. 18(c) St1 is a timing signal for causing a current Ic to flow through a diode Di (diode Dis, diode Dim).

[0535] For ease of understanding, the measured temperature information Tj will be described as changing between T1 and T2 as shown in Fig. 18(h). The temperature information Tj increases when a current is passed through the transistor 117, and decreases when the current is stopped. The temperature information Tj also changes with the change in the characteristics of the transistor 117.

[0536] In Fig. 18(f), Ssa indicates the timing of the on / off control signal for the switch circuit 124a. When Ssa becomes Von, the switch circuit 124a closes (turns on). When Ssa is 0 (V), the switch circuit 124a opens (turns off), and the application of current or voltage is cut off.

[0537] 18(e) Ssb shows the timing of the on / off control signal for the switch circuit 124b. When Ssb becomes Von, the switch circuit 124b closes (turns on). When Ssb is 0 (V), the switch circuit 124b opens (turns off).

[0538] 18(g), Vce is the channel voltage (the voltage between the emitter terminal and the collector terminal) of the transistor 117. Although not shown in the figure for ease of understanding, a surge voltage and a surge current are generated as the transistor 117 is turned on and off, and the Vce waveform changes in a complex manner over time as the on-resistance of the transistor 117 changes.

[0539] In this specification and drawings, for ease of explanation or for ease of drawing, it is assumed that when transistor 117 is on, it is at voltage Vn, and when the transistor is off, it is at voltage 0 (V).

[0540] For ease of explanation, the operation and configuration of Fig. 15(b) will be described as an example. Fig. 15(b) shows an example in which a test is performed by diode-connecting a transistor 117s and applying a gate signal Vsgm to a gate terminal gm of a transistor 117m. The temperature of the semiconductor element part 117 will be described as being measured by a diode Dim. A gate signal sg is applied to the gate terminal of the transistor 117 to be tested with a period tcycle, an on time ton and an off time toff.

[0541] An off voltage (0 (V)) and an on voltage (Vg) are applied to the gate terminal gm of the transistor 117m to control the transistor 117m. However, during a period tn2 before the transistor 117m is turned on, the Vt voltage may be set to a more negative voltage than the off voltage. Also, during a period tn1 after the transistor 117m is turned off, the Vt voltage may be set to a more negative voltage than the off voltage.

[0542] The diode Dim is connected to the emitter terminal em and the collector terminal cm of the transistor 117m. Temperature information Tj of the diode Dim is measured at the timing St1 of FIG.

[0543] 18(c) is a timing signal for causing a current Icm to flow through the diode Dim. When St1 is at H level, a constant current Icm flows through the diode Dim of the transistor 117m. A voltage detection circuit 129m obtains a terminal voltage Vim of the diode Dim, and a temperature measurement circuit (not shown) converts the terminal voltage Vim into temperature information Tj.

[0544] The temperature information Tj is sent to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) performs or stops the test of the transistor 117 or changes the control in accordance with the temperature information Tj.

[0545] The temperature information Tj is sent to the controller circuit board 111 (controller 111), and the controller circuit board 111 (controller 111) performs a test on the transistor 117 based on the temperature information Tj.

[0546] As shown in FIG. 11, a fork plug 205e is connected to the P electrode terminal (electrode terminal 226a), a fork plug 205h is connected to the O electrode terminal (electrode terminal 226c), and a fork plug 205c is connected to the N electrode terminal (electrode terminal 226b).

[0547] A predetermined constant current is applied to at least one of the diodes Dim and Dis. The equivalent resistance of the diode changes with temperature, and the application of a predetermined constant current changes the terminal voltage of the diode Di. Temperature information Tj is obtained from the information on this terminal voltage Vi.

[0548] 11, a short circuit 137m is formed between the gate terminal gm and the emitter terminal em of the transistor 117m, and a short circuit 137s is formed between the gate terminal gs and the emitter terminal es of the transistor 117s.

[0549] In the configuration of Fig. 11 and the configuration of Fig. 1, a constant current circuit is configured to pass a constant current Icm through the diode Dim of the transistor 117m, and the terminal voltage of the diode Dim is measured by the voltage between the collector terminal cm and the emitter terminal em of the transistor 117m. Also, a constant current circuit is configured to pass a constant current Ics through the diode Dis of the transistor 117s, and the terminal voltage of the diode Dis is measured by the voltage between the collector terminal cs and the emitter terminal es of the transistor 117s.

[0550] When a constant current is to flow through the diode Di, the transistor 117 is turned off. The constant current Icm to the diode Dim is supplied as a current drawn from the transistor Tm. The constant current Ics to the diode Dis is supplied as a current drawn from the transistor Ts.

[0551] The terminal voltage of the diode Dim is measured or obtained by a voltage detection circuit 129m connected to the collector terminal cm and emitter terminal em of the transistor 117m. The terminal voltage of the diode Dis is measured or obtained by a voltage detection circuit 129s connected to the collector terminal cs and emitter terminal es of the transistor 117s.

[0552] The voltage at the emitter terminal es of transistor 117s is the voltage at the N electrode terminal plus the channel-to-channel voltage Vcem of transistor 117m. When the channel-to-channel voltage Vcem of transistor 117m fluctuates, the voltage at the emitter terminal es of transistor 117s also fluctuates, and the anode voltage of diode Dis also fluctuates. Similarly, when the N electrode terminal voltage fluctuates, the anode voltage of diode Dim also fluctuates.

[0553] In the configuration of the present invention shown in Fig. 11, the current detection circuit 128, the voltage detection circuit 129, the constant current setting circuit 130, etc. are insulated from the circuit voltage Vc and are configured in a floating state, as in Fig. 1. Therefore, the terminal voltage of the diode Dis can be measured or obtained without any problem even if the emitter terminal em voltage of the transistor 117m fluctuates or shifts. The same is true for the terminal voltage of the variable resistance circuit 125.

[0554] It goes without saying that the present invention can be modified in various ways without departing from the spirit and scope of the present invention. It goes without saying that the matters or contents described in this specification and drawings can be combined with each other.

[0555] FIG. 32 shows a semiconductor element component 117 in which a diode Di is formed between at least one of the channels of a transistor 117m or a transistor 117s.

[0556] In the semiconductor element component 117, when a diode D (Ds, Dm) is not formed as in Fig. 31, a diode Di (Dis, Dim) may not be formed between channels as in Fig. 32. In that case, it is necessary to obtain the temperature information Tj of the semiconductor element component 117 without using a diode.

[0557] For example, if there is no diode Di in Figure 32, an on-voltage is applied to the gate terminal gs of transistor 117s, and the change in the channel-to-channel voltage of transistor 117s is measured to obtain temperature information Tj (the temperature information Tj is obtained from the change in the channel-to-channel voltage Vce). Alternatively, an on-voltage is applied to the gate terminal gm of transistor 117m, and the change in the channel-to-channel voltage of transistor 117m is measured to obtain temperature information Tj (the temperature information Tj is obtained from the change in the channel-to-channel voltage Vce). In these cases, since there is no diode, it goes without saying that a circuit generating constant current Ic is not necessary.

[0558] In FIG. 11, a constant current is not applied between the channels of the transistor 117 (transistor 117s, transistor 117m), but the voltage detection circuit 129 measures the inter-terminal voltage Vi (Vis, Vim) to obtain temperature information Tj.

[0559] Fig. 10 is an explanatory diagram of a semiconductor element testing apparatus in another embodiment of the present invention. Fig. 9 shows a test circuit module for testing a semiconductor element component 117. The test circuit module is designated as 301. The test circuit module 301 is connected to parts A, B, and C in Fig. 10. The test circuit module 301 is prepared corresponding to each semiconductor element component 117.

[0560] It goes without saying that the transistor 171 of the test circuit module 301 may have not only the configuration shown in FIG. 31 but also the configuration shown in FIG. 32, or may have other configurations.

[0561] The test circuit module 301 is connected to three switch circuit boards 201 (switch circuit board 201b, switch circuit board 201c, switch circuit board 201d). As shown in Fig. 10, the switch circuit board 201b is prepared corresponding to the semiconductor element component 117 to be tested. In Fig. 10, a switch circuit 124ba is arranged in the test circuit module 301a, a switch circuit 124bb is arranged in the test circuit module 301b, and a switch circuit 124bc is arranged in the test circuit module 301c.

[0562] A switch circuit 124d is mounted on the switch circuit board 201b. A conductive plate 204d and a conductive plate 204c are attached to the switch circuit board 201b. The conductive plate 204d is electrically connected to a fork plug 205e inserted from an opening 216 of the partition wall 214. The fork plug 205d is electrically connected to the conductive plate 204c. The fork plug 205e is connected to a P electrode terminal of the semiconductor element component 117. Fork plug 205h connected to the O electrode terminal is inserted from opening 216 of partition wall 214 and is electrically connected to conductive plate 204f and conductive plate 204a.

[0563] A fork plug 205 c is connected to the N electrode terminal of the transistor 117. The fork plug 205 c is inserted through the opening 216 of the partition wall 214 and is electrically connected to the conductor plate 204 b. The conductor plate 204 b is connected to part B of the test circuit module 301.

[0564] The switch circuit board 201c is mounted with a switch circuit 124c. The switch circuit board 201c is provided with a conductive plate 204e and a conductive plate 204f. The conductive plate 204e is electrically connected to the fork plug 205a. The fork plug 205 d and the fork plug 205 a are connected to the portion A of the test circuit module 301 .

[0565] A switch circuit 124d is mounted on the switch circuit board 201d. A conductor plate 204a and a conductor plate 204b are attached to the switch circuit board 201d. The conductor plate 204b is electrically connected to a fork plug 205b.

[0566] A connector 202m is connected to the transistor 117m, and a connector 202s is connected to the transistor 117s. The test circuit module 301 includes a short circuit 137, a sample connection circuit 203, and a device control circuit board 209.

[0567] The test circuit module 301 in Fig. 9 is arranged in parts A and B in Fig. 10. The embodiment in Fig. 10 is an embodiment in which three semiconductor element components 117 are tested simultaneously. The test circuit module 301 is controlled by one controller circuit board 111. 10, the switch circuit 124a has the function of short-circuiting the N electrode terminal and the P electrode terminal of the semiconductor element part 117, as described in FIG.

[0568] In each test circuit module 301, the semiconductor device component 117 is connected to the switch circuit board 201 arranged in the room B by three fork plugs 205 (fork plug 205e, fork plug 205h, and fork plug 205c). In FIG. 10, a plurality of semiconductor element parts 117 to be tested are connected in parallel to a power supply circuit 121 .

[0569] Fig. 21 is an explanatory diagram of the operation of the semiconductor testing apparatus of the present invention in Fig. 10. As an example, the semiconductor element component 117 of the test circuit module 301 is described as operating as shown in Fig. 8(b). As shown in Fig. 21, the signal Vsgm is applied to the test circuit module 301a, the test circuit module 301b, the test circuit module 301c, and the test circuit module 301d in this order, and the transistors 117 and the like are tested. In FIG. 8(b), the transistor 117s is diode-connected, and a gate signal Vsgm is applied to the gate terminal gm of the transistor 117m.

[0570] 10, a gate signal Vsgm is applied to the gate terminal gm of the transistor 117m of the test circuit module 301a, the transistor 117m of the test circuit module 301b, and the transistor 117m of the test circuit module 301c for a period of t cycle and a time of ton. Before and after ton, Ssa (switch circuit 124a) is turned on to short-circuit the P electrode terminal and the N electrode terminal of the transistor 117, thereby discharging the electric charge. Moreover, at the timing of FIG. 18(d), a constant current Icm is applied to the diode Dm, and temperature information Tj is acquired. The above matters and the test method etc. have been explained using Figures 18, 19, 20 etc., so the explanation will be omitted.

[0571] The semiconductor element part 117 shown in Fig. 32 is also configured in a test circuit module 301 as shown in Fig. 16, and parts A, B, and C configure a semiconductor element test apparatus as shown in Fig. 10. The test method is also similar to that in Fig. 21, so a description thereof will be omitted. In the embodiment of the present invention, the transistor 117 is illustrated as an IGBT, but the present invention is not limited to this.

[0572] It goes without saying that, for example, an N-channel JFET (Figure 33(a)), a P-channel JFET (Figure 33(b)), an N-channel MOSFET (Figure 33(c)), a P-channel MOSFET (Figure 33(d)), an N-channel bipolar FET (Figure 33(e)), or a P-channel bipolar FET (Figure 33(f)) may be used.

[0573] In addition, the device is not limited to a three-terminal device, and may be a two-terminal element such as a diode shown in Fig. 33(g). A two-terminal element does not require a gate signal Vsg. It goes without saying that the semiconductor element testing apparatus and the semiconductor element testing method of the present invention can be applied by testing by passing a constant current Id from the power supply circuit 121.

[0574] Furthermore, it goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention are not limited to transistors and diodes, but can also be applied to semiconductor elements such as a thyristor shown in FIG. 33(h) and a triac shown in FIG. 33(i), varistors, diacs, or modules in which transistors, diodes, resistors, etc. are mixed or integrated.

[0575] 17 shows an embodiment for testing a semiconductor device component 117 consisting of a transistor 117m and a transistor 117s connected in two stages. A semiconductor device component 117a and a semiconductor device component 117b are connected in series.

[0576] As shown in Fig. 17, the configuration of Fig. 17 is composed of block b and block a. Block b and block a are the same or similar to the matters explained in this specification and Figs. 1, 2, 23, 24, etc., so explanations will be omitted.

[0577] 17, the semiconductor element part 117b in the b block can be tested by turning on the switch circuit 124e, and the semiconductor element part 117b in the a block can be tested by turning on the switch circuit 124f.

[0578] 4, 5, 6, 7, etc., the power supply wiring is omitted, but as an example, the emitter terminal em of the transistor 117m of the semiconductor element component 117a is connected to the Vmm2 (Vmm2a) voltage and the Vmm1 (Vmm1a) voltage. The emitter terminal es of the transistor 117s of the semiconductor element component 117a is connected to the Vms2 (Vms2a) voltage and the Vms1 (Vms1a) voltage.

[0579] Moreover, the emitter terminal em of the transistor 117m of the semiconductor element component 117b is connected to the voltage Vmm2 (Vmm2b) and the voltage Vmm1 (Vmm1b). The emitter terminal es of the transistor 117s of the semiconductor element component 117b is connected to the voltage Vms2 (Vms2b) and the voltage Vms1 (Vms1b).

[0580] Vmm1a, Vmm2a, Vms1a, Vms2a, Vmm1b, Vmm2b, Vms1b, and Vms2 are generated in the isolated DC-DC converter circuit. Therefore, Vmm1a, Vmm2a, Vms1a, Vms2a, Vmm1b, Vmm2b, Vms1b, and Vms2 are isolated from each other and are in a floating state.

[0581] 31 and 32, the semiconductor element component 117 is exemplified by a transistor 117s and a transistor 117m connected in series. However, the test device and test apparatus for the semiconductor element component 117 of the present invention are not limited to this.

[0582] For example, in Fig. 31 or 32, a semiconductor element component 117 having only one of the transistors 117s and 117m is also within the technical scope of the present invention. For example, in Fig. 31, a configuration having only the transistor 117m and the diode Dm is exemplified, in which the power supply circuit of the gate driver circuit 113 of the transistor 117m and the power supply circuit of the constant current circuit that applies a constant current to the diode Dm are electrically insulated or floating.

[0583] In the above, the present specification has specifically described the present invention based on the embodiment, but it goes without saying that the present invention is not limited thereto and various modifications are possible without departing from the spirit of the present invention. It goes without saying that the matters or contents described in this specification and the drawings can be combined with each other. [Industrial Applicability]

[0584] In the present invention, a first power supply voltage of a first gate driver circuit that generates a signal to turn on and off a first transistor 117m and a second power supply voltage of a second gate driver circuit that generates a signal to turn on and off a second transistor 117s are configured to be insulated (floating) from each other. The signal potentials of the gate terminals of the transistors 117m and 117s are not excessively high, but are predetermined signal or terminal potentials.

[0585] It is also possible to provide a semiconductor element testing apparatus and a semiconductor testing method that can easily change connections depending on the test contents of semiconductor elements such as transistors and the number of semiconductor elements to be tested simultaneously, and that can effectively implement measures against noise generated during testing. [Explanation of symbols]

[0586] 111 Controller circuit board (controller) 112 Gate signal control circuit 113 Gate driver circuit 115 Temperature measurement circuit (not shown) 116 Op-amp circuit (buffer amplifier) 117 Power Transistor 121 Power supply circuit 122 Switch Circuit 123 Switch Circuit 124 Switch Circuit 125 Variable Resistor Circuit 126 Variable Resistor Circuit 127 Changeover switch circuit 128 Current Detection Circuit 129 Voltage detection circuit 130 Constant current setting circuit 131 Control Rack 132 Power supply 133 Control circuit 134 Heating and cooling plate 135 Circulating Water Pipe 136 Chiller 137 Short Circuit 138 Isolated DC / DC converter circuit 201 Switch circuit board 202 Connector 203 Sample connection circuit 204 Conductor plate 205 Fork plug 206 connection pins 207 Motherboard 208 Connector 209 Device control circuit board 210 Cabinet 211 Connection wiring 212 Power wiring 213 Connector 214 Bulkhead 215 Bulkhead 216 Opening 217 Bulkhead 219 Connection bolt 220 Contact part 221 Fixing screw 222 Signal wiring 225 Contact part 226 Element terminal 235 Signal Wiring 301 Test Circuit Module 302 Voltage selection circuit 311 Selection switch 312 Selection Switch 313 Selection Switch 314 Thermocouple 315 Connector

Claims

1. An electric element testing apparatus for testing an electric element component having a first transistor connected to a first terminal, a third terminal, and a first gate signal section, and a second transistor connected to a second terminal, the third terminal, and a second gate signal section, a first switch circuit board having a first conductive plate or conductive rod, a second conductive plate or conductive rod, and a first switch circuit; a power supply device having a fourth terminal and a fifth terminal and supplying a test current or a test voltage to the electric element part; a first gate signal section driver circuit having a first voltage terminal, a second voltage terminal, a fifth voltage terminal and a first gate signal terminal; a second gate signal section driver circuit having a third voltage terminal, a fourth voltage terminal, a sixth voltage terminal and a second gate signal terminal; a voltage generating circuit that generates a second voltage based on a first voltage of the first voltage terminal, a fifth voltage based on the first voltage of the first voltage terminal, a fourth voltage based on a third voltage of the third voltage terminal, and a sixth voltage based on the third voltage of the third voltage terminal; the second terminal is connected to the first conductive plate or conductive rod, the fourth terminal is connected to the second conductive plate or conductive rod, the first terminal is connected to the fifth terminal; the first gate signal terminal is connected to the first gate signal section; the second gate signal terminal is connected to the second gate signal section; the second voltage is applied to the second voltage terminal; the fifth voltage is applied to the fifth voltage terminal; the fourth voltage is applied to the fourth voltage terminal; the sixth voltage is applied to the sixth voltage terminal; any one of a first signal based on the first voltage, a second signal based on the second voltage, and a fifth signal based on the fifth voltage is applied to the first gate signal unit; any one of a third signal based on the third voltage, a fourth signal based on the fourth voltage, and a sixth signal based on the sixth voltage is applied to the second gate signal unit; When the first switch circuit is turned on, the first conductive plate or conductive rod and the second conductive plate or conductive rod are short-circuited, 2. The electrical element testing apparatus according to claim 1, wherein the first voltage and the third voltage are floating.

2. An electric element testing apparatus for testing an electric element component having a first transistor connected to a first terminal, a third terminal, and a first gate signal section, and a second transistor connected to a second terminal, the third terminal, and a second gate signal section, a second switch circuit board having a third conductive plate or conductive rod, a fourth conductive plate or conductive rod, and a second switch circuit; a third switch circuit board having a fifth conductive plate or conductive rod, a sixth conductive plate or conductive rod, and a third switch circuit; a power supply device having a fourth terminal and a fifth terminal and supplying a test current or a test voltage to the electric element part; a first gate signal section driver circuit having a first voltage terminal, a second voltage terminal, a fifth voltage terminal and a first gate signal terminal; a second gate signal section driver circuit having a third voltage terminal, a fourth voltage terminal, a sixth voltage terminal and a second gate signal terminal; a voltage generating circuit that generates a second voltage based on a first voltage of the first voltage terminal, a fifth voltage based on the first voltage of the first voltage terminal, a fourth voltage based on a third voltage of the third voltage terminal, and a sixth voltage based on the third voltage of the third voltage terminal; the second terminal is connected to the fourth terminal; the fourth terminal is connected to the third conductive plate or conductive rod, the third terminal is connected to the fourth conductive plate or conductive rod, the first terminal is connected to the fifth terminal; the third terminal is connected to the fifth conductive plate or conductive rod, the first terminal is connected to the sixth conductive plate or conductive rod, the first gate signal terminal is connected to the first gate signal section; the second gate signal terminal is connected to the second gate signal section; the second voltage is applied to the second voltage terminal; the fifth voltage is applied to the fifth voltage terminal; the fourth voltage is applied to the fourth voltage terminal; the sixth voltage is applied to the sixth voltage terminal; any one of a first signal based on the first voltage, a second signal based on the second voltage, and a fifth signal based on the fifth voltage is applied to the first gate signal unit; any one of a third signal based on the third voltage, a fourth signal based on the fourth voltage, and a sixth signal based on the sixth voltage is applied to the second gate signal unit; When the second switch circuit is turned on, the third conductive plate or conductive rod and the fourth conductive plate or conductive rod are short-circuited, When the third switch circuit is turned on, the fifth conductive plate or rod and the sixth conductive plate or rod are short-circuited, 2. The electrical element testing apparatus according to claim 1, wherein the first voltage and the third voltage are floating.

3. An electric element testing apparatus for testing an electric element component having a first transistor connected to a first terminal, a third terminal, and a first gate signal section, and a second transistor connected to a second terminal, the third terminal, and a second gate signal section, a first switch circuit board having a first conductive plate or conductive rod, a second conductive plate or conductive rod, and a first switch circuit; a fourth switch circuit board having a seventh conductor plate or conductor rod, an eighth conductor plate or conductor rod, and a fourth switch circuit; a power supply device having a fourth terminal and a fifth terminal and supplying a test current or a test voltage to the electric element part; a first gate signal section driver circuit having a first voltage terminal, a second voltage terminal, a fifth voltage terminal and a first gate signal terminal; a second gate signal section driver circuit having a third voltage terminal, a fourth voltage terminal, a sixth voltage terminal and a second gate signal terminal; a voltage generating circuit that generates a second voltage based on a first voltage of the first voltage terminal, a fifth voltage based on the first voltage of the first voltage terminal, a fourth voltage based on a third voltage of the third voltage terminal, and a sixth voltage based on the third voltage of the third voltage terminal; the second terminal is connected to the first conductive plate or conductive rod, the fourth terminal is connected to the second conductive plate or conductive rod, the first terminal is connected to the fifth terminal; the fourth terminal is connected to the seventh conductive plate or conductive rod; the fifth terminal is connected to the eighth conductive plate or conductive rod, the first gate signal terminal is connected to the first gate signal section; the second gate signal terminal is connected to the second gate signal section; the second voltage is applied to the second voltage terminal; the fifth voltage is applied to the fifth voltage terminal; the fourth voltage is applied to the fourth voltage terminal; the sixth voltage is applied to the sixth voltage terminal; any one of a first signal based on the first voltage, a second signal based on the second voltage, and a fifth signal based on the fifth voltage is applied to the first gate signal unit; any one of a third signal based on the third voltage, a fourth signal based on the fourth voltage, and a sixth signal based on the sixth voltage is applied to the second gate signal unit; When the first switch circuit is turned on, the first conductive plate or conductive rod and the second conductive plate or conductive rod are short-circuited, When the fourth switch circuit is turned on, the seventh conductive plate or conductive rod and the eighth conductive plate or conductive rod are short-circuited, 2. The electrical element testing apparatus according to claim 1, wherein the first voltage and the third voltage are floating.

4. An electric element testing apparatus for testing an electric element component having a first transistor connected to a first terminal, a third terminal, and a first gate signal section, and a second transistor connected to a second terminal, the third terminal, and a second gate signal section, a first switch circuit board having a first conductive plate or conductive rod, a second conductive plate or conductive rod, and a first switch circuit; a second switch circuit board having a third conductive plate or conductive rod, a fourth conductive plate or conductive rod, and a second switch circuit; a third switch circuit board having a fifth conductive plate or conductive rod, a sixth conductive plate or conductive rod, and a third switch circuit; a power supply device having a fourth terminal and a fifth terminal and supplying a test current or a test voltage to the electric element part; a first gate signal section driver circuit having a first voltage terminal, a second voltage terminal, a fifth voltage terminal and a first gate signal terminal; a second gate signal section driver circuit having a third voltage terminal, a fourth voltage terminal, a sixth voltage terminal and a second gate signal terminal; a voltage generating circuit that generates a second voltage based on a first voltage of the first voltage terminal, a fifth voltage based on the first voltage of the first voltage terminal, a fourth voltage based on a third voltage of the third voltage terminal, and a sixth voltage based on the third voltage of the third voltage terminal; the second terminal is connected to the first conductive plate or conductive rod, the fourth terminal is connected to the second conductive plate or conductive rod, the first terminal is connected to the fifth terminal; the fourth terminal is connected to the fourth conductive plate or conductive rod, the third terminal is connected to the third conductive plate or conductive rod, the third conductor plate or conductor rod is connected to the sixth conductor plate or conductor rod, the first terminal is connected to the fifth conductive plate or conductive rod, the first gate signal terminal is connected to the first gate signal section; the second gate signal terminal is connected to the second gate signal section; the second voltage is applied to the second voltage terminal; the fifth voltage is applied to the fifth voltage terminal; the fourth voltage is applied to the fourth voltage terminal; the sixth voltage is applied to the sixth voltage terminal; any one of a first signal based on the first voltage, a second signal based on the second voltage, and a fifth signal based on the fifth voltage is applied to the first gate signal unit; any one of a third signal based on the third voltage, a fourth signal based on the fourth voltage, and a sixth signal based on the sixth voltage is applied to the second gate signal unit; When the first switch circuit is turned on, the first conductive plate or conductive rod and the second conductive plate or conductive rod are short-circuited, When the second switch circuit is turned on, the third conductive plate or conductive rod and the fourth conductive plate or conductive rod are short-circuited, When the third switch circuit is turned on, the fifth conductive plate or rod and the sixth conductive plate or rod are short-circuited, 2. The electrical element testing apparatus according to claim 1, wherein the first voltage and the third voltage are floating.

5. A selection switch is disposed on the first switch circuit board, 5. The electrical element testing apparatus according to claim 1, 3 or 4, wherein an address of the first switch circuit board is added by the selection switch.

6. Further comprising a heating and cooling plate and a water leakage sensor, the electric element part is disposed in close contact with the heating / cooling plate, The water leakage sensor is disposed around the heating / cooling plate, 5. The electric element testing device according to claim 1, 2, 3 or 4, wherein the operation of the electric element testing device is stopped or an alarm is issued in response to the operation of the water leakage sensor.

7. A joining member is connected to the second terminal, the first conductive plate or conductive rod has a first portion protruding from the first switch circuit board, 5. The electrical element testing apparatus according to claim 1, 3 or 4, wherein the connection member is fitted into the first portion.

8. A joining member is connected to the second terminal, The connecting member is a fork plug, 5. The electrical element testing device according to claim 1, 3 or 4, wherein a surface of the connection member at a portion where the connection member contacts the first conductive plate or conductive rod is plated with silver.

9. The housing of the electrical element test apparatus has a first chamber and a second chamber, The electrical component is disposed in a first chamber, 5. The electrical element testing apparatus according to claim 1, 3 or 4, wherein the first switch circuit board is disposed in a second chamber below the first chamber.

10. An electrical element testing apparatus as described in claim 1, claim 2, claim 3 or claim 4, characterized in that a resistive circuit is connected between the first gate signal terminal and the first gate signal section.

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