Plasma processing apparatus

Abstract

To improve in-plane uniformity of plasma.SOLUTION: A plasma processing apparatus includes a chamber, a stage, a dielectric member, and a plasma generating unit 16. The plasma generating unit 16 includes a first coil 17 including a plurality of first conductors 17a connected in parallel to one another, and a first distributor 18 for distributing first high-frequency power supplied to the first coil 17 to each of the first conductors 17a. The first distributor 18 includes a first input unit 18a to which the first high-frequency power is input, a first branch unit 18b for branching the first high-frequency power input to the first input unit 18a into a plurality of first branch lines 18e, and a plurality of second branch units 18c for branching each of the first branch lines 18e into a plurality of second branch lines 18f. Each of the second branch lines 18f is connected to a first applying unit 17b of the first conductor 17a. The lengths of the first branch lines 18e are approximately the same as one another. The lengths of the second branch lines 18f are approximately the same as one another.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Conventionally, plasma processing apparatuses that process a workpiece using plasma are known (for example, see Patent Document 1). The plasma processing apparatus of Patent Document 1 includes a chamber, a dielectric window, and an inner coil, a middle coil, and an outer coil disposed above the dielectric window, and is configured to generate plasma in the chamber by applying high-frequency power to each coil. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-74464 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the plasma processing apparatus of Patent Document 1, as shown in FIG. 2 of the same document, the lengths of the coil segments corresponding to each coil are significantly different from each other, so it is presumed that the in-plane uniformity of the plasma (i.e., the uniformity of the plasma density distribution in the horizontal plane in the chamber) is not very high. It is desirable for the in-plane uniformity of the plasma to be as high as possible in order to uniformly process the entire workpiece, such as a wafer. In such a situation, one of the objectives of the present disclosure is to improve the in-plane uniformity of the plasma. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a plasma processing apparatus, the plasma processing apparatus comprising: a chamber having an opening, a stage disposed in the chamber and on which an object to be processed is placed, a dielectric member for closing the opening, and a plasma generating unit disposed on the opposite side of the dielectric member from the chamber and for generating plasma in the chamber, the plasma generating unit having a first coil including a plurality of first conductors connected in parallel to each other, and a first distributor for distributing a first high frequency power supplied to the first coil to each of the first conductors, the first distributor including a first input unit to which the first high frequency power is input, a first branch unit for branching the first high frequency power input to the first input unit into a plurality of first branch lines, and a plurality of second branch units for branching each of the first branch lines into a plurality of second branch lines, each of the second branch lines being connected to a first application unit of the first conductor, each of the first branch lines being substantially the same in length, and each of the second branch lines being substantially the same in length. Effect of the Invention

[0006] According to the present disclosure, the in-plane uniformity of plasma can be improved. [Brief description of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view illustrating a schematic example of a plasma processing apparatus according to the present disclosure. [Diagram 2] FIG. 2 is a plan view showing a schematic diagram of the plasma generating unit, in which components of the first and second distributors are indicated by dot hatching. [Diagram 3] FIG. 2 is a plan view illustrating a first coil and a second coil. [Figure 4] 11 is a simulation result showing a radical density distribution in a plasma processing apparatus according to the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] An embodiment of a plasma processing apparatus according to the present disclosure will be described below with reference to an example. However, the present disclosure is not limited to the example described below. In the following description, specific numerical values ​​and materials may be exemplified, but other numerical values ​​and materials may be applied as long as the effects of the present disclosure are obtained.

[0009] The plasma processing apparatus according to the present disclosure is an apparatus for performing plasma processing on a processing object. The plasma processing apparatus may be, for example, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus. The plasma processing apparatus includes a chamber, a stage, a dielectric member, and a plasma generating unit.

[0010] The chamber has an opening. The chamber may be formed in a hollow cylindrical shape. The chamber may have an opening at an upper portion. The opening may be open toward the top. The chamber may be electrically grounded.

[0011] The stage is disposed in the chamber, and the workpiece is placed thereon. The stage may have a horizontal placement surface on which the workpiece is placed. The stage may have a flow path through which a coolant flows for cooling the workpiece during plasma processing. The stage may have an electrostatic adsorption mechanism for adsorbing the workpiece. The stage may have a lower electrode to which high-frequency power is applied. The workpiece may be, for example, a semiconductor substrate that is singulated by plasma etching. The semiconductor substrate includes a plurality of element regions and division regions that define the element regions. The element regions include, for example, a semiconductor layer and a wiring layer. By etching the division regions, an element chip having a semiconductor layer and a wiring layer is obtained. The workpiece may be placed on the stage while being supported by a carrier. The carrier may be, for example, a resin sheet whose outer periphery is held by a frame.

[0012] The dielectric member closes the opening of the chamber. The dielectric member may be formed in a plate shape having a horizontally extending region. The dielectric member may be made of ceramics such as quartz, alumina, aluminum nitride, etc. The dielectric member may be made mainly of quartz.

[0013] The plasma generating unit is provided on a side of the dielectric member opposite the chamber and generates plasma in the chamber. The plasma generating unit may be provided above the dielectric member.

[0014] The plasma generating unit has a first coil and a first distributor. The first coil includes a plurality of (e.g., four) first conductors connected in parallel to each other. The lengths of the plurality of first conductors may be substantially the same. The first distributor distributes the first high frequency power supplied to the first coil to each of the first conductors. The first distributor may be composed of a conductor.

[0015] The first distributor includes a first input section, a first branch section, and a second branch section. The first input section receives the first high frequency power. The first branch section branches the first high frequency power input to the first input section into a plurality of (e.g., two) first branch lines. The second branch section branches each of the first branch lines into a plurality of (e.g., two) second branch lines.

[0016] Each second branch line is connected to a first application portion of the first conductor. Each first conductor may further include a first ground portion electrically connected to the chamber. One second branch line may be connected to one first conductor. In other words, a plurality of second branch lines may correspond one-to-one to a plurality of first conductors.

[0017] According to the above configuration, the first high frequency power input to the first input section is branched into the first branch lines, and then further branched into the second branch lines and flows through the first conductors of the first coil. This generates a high frequency magnetic field from the first coil, which acts on the source gas introduced into the chamber to generate plasma.

[0018] Here, in the plasma processing apparatus according to the present disclosure, the lengths of the first branch lines are substantially the same as each other, and the lengths of the second branch lines are substantially the same as each other. That is, the lengths of the current paths to the first conductors in the first distribution section (i.e., the lengths of the current paths from the first input section to the first application section of each first conductor via the first branch line and the second branch line) are substantially the same as each other. Therefore, the high-frequency currents flowing through the multiple first conductors become equivalent to each other, and the in-plane uniformity of the plasma generated by the first coil is improved.

[0019] In this specification, the length of member A and the length of member B being approximately the same means that, when the length of one of them is 100 (reference value), the length of the other is 95 to 105. Also, the length of a member refers to the length that follows the shape of the member.

[0020] The first conductors may each have a shape that spreads in a spiral shape from the first application section provided on the center side of the dielectric member to the first ground section provided on the outer periphery side, and may be arranged rotationally symmetrical with respect to the center of the dielectric member. The first input section may be arranged on the outer periphery side of the dielectric member relative to the first branch section. The first branch section may be arranged on the center side of the dielectric member relative to the second branch section. With such an arrangement of the sections, the current due to the first high frequency power input to the first input section flows toward the first branch section, i.e., toward the center side of the dielectric member, and then flows toward the second branch section via each first branch line, i.e., toward the outer periphery side of the dielectric member, and then flows into each first conductor of the first coil via each second branch line. In each first conductor of the first coil, a current flows from the first application section to the first ground section, i.e., from the center side to the outer periphery side of the dielectric member. Since each first branch line and each second branch line are located closer to the center than each first conductor, it is possible to suppress interference of the magnetic field generated by the current flowing through both branch lines with each first conductor.

[0021] The first branching section may be disposed on the outer periphery side of the center of the dielectric member. The first branching section is disposed on the innermost side of the first distribution section, and by disposing the first branching section on the outer periphery side of the center of the dielectric member, a space corresponding to the center of the dielectric member can be secured. Such a space can be effectively used, for example, to dispose a measuring device (for example, a laser interferometer for measuring film thickness or an infrared sensor for measuring substrate temperature) for measuring the state of the workpiece during plasma processing.

[0022] The plasma generating unit may further include a second coil arranged closer to the center of the dielectric member than the first applying unit of the first coil and including a plurality of (e.g., two) second conductors connected in parallel to each other, and a second distributor that distributes the second high-frequency power supplied to the second coil to each of the second conductors. The second distributor may include a second input unit to which the second high-frequency power is input, and a third branch unit that branches the second high-frequency power input to the second input unit into a plurality of (e.g., two) third branch lines. Each of the third branch lines may be connected to a second applying unit of the second conductor. The lengths of the third branch lines may be approximately the same. In this configuration, the second coil is arranged closer to the center of the dielectric member than the first coil. In this sense, the first coil may be referred to as an outer coil, and the second coil may be referred to as an inner coil. A current due to the second high-frequency power supplied to the second coil flows through the plurality of third branch lines via the second input unit, and then flows through the plurality of second conductors via the second applying unit. As a result, a high-frequency magnetic field is generated from the second coil, which acts on the raw material gas introduced into the chamber to generate plasma. Since the lengths of the third branch lines are substantially the same, the lengths of the current paths to the second conductors in the second distribution section are substantially the same. Therefore, the high-frequency currents flowing through the multiple second conductors are equivalent to each other, and the in-plane uniformity of the plasma generated by the second coil is improved.

[0023] The third branch portion may be disposed on the outer periphery side of the center of the dielectric member. By disposing the third branch portion on the outer periphery side of the center of the dielectric member, a space corresponding to the center of the dielectric member can be secured. Such a space can be effectively used, for example, to dispose a measuring device (for example, a laser interferometer for measuring film thickness or an infrared sensor for measuring substrate temperature) for measuring the state of the workpiece during plasma processing.

[0024] The third branch portion may be disposed closer to the center of the dielectric member than the first application portion of the first coil. With this configuration, each third branch line connected to the third branch portion is disposed closer to the center of the dielectric member than the first application portion of the first coil that is disposed closest to the center. This makes it possible to suppress interference of the magnetic field generated by the high-frequency current flowing through each third branch line with the first coil.

[0025] The distance between the third branch section and the dielectric member may be smaller than the distance between the first branch section and the dielectric member. A higher RF power is often applied to each of the first branch lines and each of the second branch lines corresponding to the first coil (outer coil) than to each of the third branch lines corresponding to the second coil (inner coil). In other words, the first RF power is often higher than the second RF power. In contrast, in this configuration, each of the first branch lines and each of the second branch lines is disposed farther from the dielectric member than each of the third branch lines, that is, farther from the chamber. In other words, by disposing each of the first branch lines and each of the second branch lines (or the first distribution section) to which a relatively large RF power is applied farther from the chamber, it is possible to suppress the magnetic field generated by the RF current flowing through the first distribution section from affecting the plasma in the chamber.

[0026] The plasma generating unit may have a first application line connecting the first input unit and the first branch unit, and a second application line connecting the second input unit and the third branch unit. The first application line and the second application line may be arranged so as not to overlap each other in a plan view. In this configuration, the first application line through which a current due to the first high frequency power flows and the second application line through which a current due to the second high frequency power flows are arranged so as not to overlap each other in a plan view, so that magnetic field interference between both application lines can be suppressed. The first application line and the second application line may be arranged, for example, offset from each other by 30° or more and 180° or less in a plan view.

[0027] As described above, according to the present disclosure, the in-plane uniformity of plasma can be improved by making the lengths of the first branch lines and the second branch lines uniform. Furthermore, according to the present disclosure, the in-plane uniformity of plasma can be further improved by making the lengths of the third branch lines uniform.

[0028] An example of a plasma processing apparatus according to the present disclosure will be specifically described below with reference to the drawings. The above-mentioned components can be applied to the components of the plasma processing apparatus of the example described below. The components of the plasma processing apparatus of the example described below can be modified based on the above description. The matters described below may also be applied to the above embodiment. Among the components of the plasma processing apparatus of the example described below, components that are not essential to the plasma processing apparatus according to the present disclosure may be omitted. Note that the diagrams shown below are schematic and do not accurately reflect the shapes and numbers of actual members.

[0029] The plasma processing apparatus 10 of this embodiment is an apparatus for plasma processing an object to be processed (e.g., a semiconductor substrate). The plasma processing apparatus 10 of this embodiment is a plasma dicer, but is not limited thereto. As shown in FIGS. 1 to 3, the plasma processing apparatus 10 includes a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction passage 15, a plasma generating section 16, a metal cover 25, a first support column 27, a second support column 29, a first heater 31, a second heater 32, a first pressing section 33, a second pressing section 34, a high-frequency power source 22, a matching box 23, and a distributor 24.

[0030] The chamber 11 has an opening 11a at the top. The chamber 11 is formed in a hollow cylindrical shape, but is not limited to this. The opening 11a opens upward. The chamber 11 is disposed on the outer periphery side of the stage 12, and has an exhaust port 11b for exhausting the raw material gas used in the plasma processing. An exhaust device (not shown) is connected to this exhaust port 11b. The chamber 11 is made of a conductive material (e.g., metal). The chamber 11 is grounded.

[0031] Stage 12 is disposed within chamber 11, and a workpiece is placed thereon. Stage 12 has a horizontal placement surface 12a on which the workpiece is placed. Stage 12 has a flow path (not shown) through which a coolant flows to cool the workpiece during plasma processing. Stage 12 has an electrostatic adsorption mechanism (not shown) for adsorbing the workpiece. Stage 12 has a lower electrode (not shown) to which high-frequency power is applied.

[0032] The dielectric member 13 closes the opening 11a of the chamber 11. The dielectric member 13 is formed in a plate shape having a horizontally extending region. The dielectric member 13 is made of quartz, but is not limited to this.

[0033] The cover 14 is installed in the chamber 11 so as to cover the dielectric member 13. The cover 14 covers the lower surface of the dielectric member 13. The cover 14 has a plurality of first gas holes 14a formed at a position overlapping the central region of the dielectric member 13, and a plurality of second gas holes 14b formed at a position overlapping the peripheral region of the dielectric member 13. The first gas holes 14a and the second gas holes 14b each penetrate the cover 14 in the thickness direction (the vertical direction in FIG. 1). The first gas holes 14a and the second gas holes 14b each communicate with a space in the chamber 11 in which the stage 12 is disposed. The plurality of first gas holes 14a are arranged at intervals in the radial direction and the circumferential direction. The plurality of second gas holes 14b are arranged at intervals in the radial direction and the circumferential direction. The cover 14 is made of aluminum nitride, but is not limited thereto.

[0034] The gas introduction path 15 is formed between the dielectric member 13 and the cover 14, and a raw material gas is introduced through the gas introduction path 15. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14a and a second gas introduction path 15b communicating with the second gas hole 14b. The first gas introduction path 15a and the second gas introduction path 15b are each formed by a groove formed in the cover 14. The first gas introduction path 15a and the second gas introduction path 15b are separated from each other. The first gas introduction path 15a and the second gas introduction path 15b each communicate with the outside of the chamber 11. The first gas introduction path 15a and the second gas introduction path 15b are each connected to a gas source (not shown).

[0035] The plasma generating unit 16 is provided on the opposite side of the dielectric member 13 from the chamber 11 (the upper side in FIG. 1), and generates plasma in the chamber 11. The plasma generating unit 16 has a first coil 17, a first distribution unit 18, a second coil 19, and a second distribution unit 21.

[0036] The first coil 17 includes a plurality of (four in this example) first conductors 17a connected in parallel to each other. The lengths of the plurality of first conductors 17a are substantially the same. Each of the first conductors 17a has a shape that expands in a spiral shape from a first application portion 17b provided on the center side of the dielectric member 13 to a first ground portion 17c provided on the outer periphery side. The first ground portion 17c may be connected to a metal cover 25.

[0037] The first coil 17 is disposed above the peripheral region of the dielectric member 13. In the first coil 17, the four first conductors 17a are disposed at 90° intervals in the circumferential direction. In other words, the four first conductors 17a are disposed rotationally symmetrically with respect to the center of the dielectric member 13. With such an arrangement, it is possible to reduce the variation in plasma density in the circumferential direction.

[0038] First distributor 18 distributes, to each of first conductors 17a, the first high frequency power (a part of the high frequency power output by high frequency power supply 22) supplied to first coil 17. First distributor 18 is formed of a conductor.

[0039] The first distributor 18 includes a first input section 18a, a first branch section 18b, and a second branch section 18c. The first input section 18a receives the first high frequency power. The first branch section 18b is connected to the first input section 18a via a first application line 18d. The first branch section 18b branches the first high frequency power input to the first input section 18a into a plurality of (in this example, two) first branch lines 18e. The second branch section 18c branches each of the first branch lines 18e into a plurality of (in this example, two) second branch lines 18f. Each of the second branch lines 18f is connected to the first application section 17b of the first conductor 17a.

[0040] The first input portion 18a is disposed closer to the outer periphery of the dielectric member 13 than the first branch portion 18b. The first branch portion 18b is disposed closer to the center of the dielectric member 13 than the second branch portion 18c. The first branch portion 18b is disposed closer to the outer periphery of the center of the dielectric member 13.

[0041] The first branch lines 18e have approximately the same length. The second branch lines 18f have approximately the same length. Therefore, the lengths of the current paths to the first conductors 17a in the first distributor 18 are approximately the same, and the in-plane uniformity of the plasma generated by the first coil 17 is improved.

[0042] The second coil 19 is disposed closer to the center of the dielectric member 13 than the first application portion 17b of the first coil 17. The second coil 19 includes a plurality of (two in this example) second conductors 19a connected in parallel to each other. The lengths of the plurality of second conductors 19a are substantially the same. Each second conductor 19a has a shape that spreads in a spiral shape from the second application portion 19b provided on the center side of the dielectric member 13 to the second ground portion 19c provided on the outer periphery side. The second ground portion 19c may be electrically connected to the metal cover 25.

[0043] The second coil 19 is disposed above the central region of the dielectric member 13. In the second coil 19, the two second conductors 19a are disposed circumferentially offset by an angle of 180°. In other words, the two second conductors 19a are disposed rotationally symmetrically with respect to the center of the dielectric member 13. With such an arrangement, it is possible to reduce the variation in plasma density in the circumferential direction.

[0044] The second distributor 21 distributes the second high frequency power (a part of the high frequency power output by the high frequency power supply 22) supplied to the second coil 19 to each of the second conductors 19a. The second distributor 21 is formed of a conductor.

[0045] The second distributor 21 includes a second input section 21a and a third branch section 21b. The second input section 21a receives the second high frequency power. The third branch section 21b is connected to the second input section 21a via a second application line 21c. The third branch section 21b branches the second high frequency power input to the second input section 21a into a plurality of (two in this example) third branch lines 21d. Each of the third branch lines 21d is connected to the second application section 19b of the second conductor 19a. The second application line 21c is arranged so as not to overlap the first application line 18d in a plan view (FIG. 2).

[0046] The third branch portion 21b is disposed on the outer periphery side of the center of the dielectric member 13. The third branch portion 21b is disposed on the central side of the dielectric member 13 with respect to the first application portion 17b of the first coil 17. The distance (vertical distance) between the third branch portion 21b and the dielectric member 13 is smaller than the distance (vertical distance) between the first branch portion 18b and the dielectric member 13 (FIG. 1).

[0047] The third branch lines 21d have the same length, so that the lengths of the current paths to the second conductors 19a in the second distribution section 21 are substantially the same, and the in-plane uniformity of the plasma generated by the second coil 19 is improved.

[0048] The metal cover 25 covers the first coil 17 and the second coil 19. The metal cover 25 is provided on the upper side of the chamber 11 and is electrically connected to the chamber 11. The metal cover 25 is formed in a cylindrical shape with a closed upper end, but is not limited to this. The metal cover 25 may be made of aluminum, for example.

[0049] The first support pillar 27 is disposed above the central region of the dielectric member 13. The first support pillar 27 is made of an insulator. The first support pillar 27 is supported by the metal cover 25. The first support pillar 27 supports the second coil 19. The first support pillar 27 supports a conductive member 26 connected to the second ground portion 19c of the second coil 19 via a fixing member 28. The conductive member 26 is electrically connected to the metal cover 25 above the second coil 19. The conductive member 26 does not extend to the region above the first coil 17.

[0050] The second support pillar 29 is disposed on the upper side of the peripheral region of the dielectric member 13. The second support pillar 29 is made of an insulator. The second support pillar 29 is supported by the metal cover 25. The second support pillar 29 supports the first coil 17.

[0051] The first heater 31 and the second heater 32 are provided on the upper surface of the dielectric member 13, and heat the dielectric member 13 during plasma processing. The first heater 31 is disposed in a region closer to the center than the second heater 32.

[0052] The first pressing portion 33 and the second pressing portion 34 press the first heater 31 and the second heater 32 against the dielectric member 13. The first pressing portion 33 is provided between the first support column 27 and the first heater 31. The first pressing portion 33 has a first spring 33a for pressing the first heater 31 against the dielectric member 13. The second pressing portion 34 is provided between the metal cover 25 and the second heater 32. The second pressing portion 34 has a second spring 34a for pressing the second heater 32 against the dielectric member 13.

[0053] The high frequency power supply 22 supplies high frequency power (for example, AC power of 3 to 30 MHz) to the plasma generating unit 16. The high frequency power supply 22 is connected to the first input part 18a of the first distribution unit 18 and the second input part 21a of the second distribution unit 21 via a matching unit 23 and a distributor 24.

[0054] The matching box is connected to the high frequency power supply 22. The matching box is configured to match the impedance (input impedance) of the high frequency power supply 22 with the impedance (load impedance) downstream of the matching box .

[0055] The distributor 24 is connected between the matching unit 23 and the plasma generation unit 16. The distributor 24 has a first distribution circuit 24a that distributes a part of the high frequency power (first high frequency power) output by the high frequency power supply 22 to the first coil 17, and a second distribution circuit 24b that distributes a part of the high frequency power (second high frequency power) to the second coil 19. The first distribution circuit 24a and the second distribution circuit 24b are connected in parallel with each other.

[0056] A simulation was performed on the plasma distribution of the plasma processing apparatus 10 of this embodiment. The structure of the plasma generating unit 16 used in the simulation is such that the inner and outer diameters of the first coil 17 are about 220 mm and about 390 mm, respectively, and the inner and outer diameters of the second coil 19 are about 80 mm and about 140 mm, respectively. The plasma generating conditions used in the simulation are that the high-frequency power and frequency applied to the first coil 17 are 5000 W and 13.56 MHz, respectively, the high-frequency power and frequency applied to the second coil 19 are 700 W and 13.56 MHz, respectively, and the raw material gas is argon. FIG. 4 is a graph showing the radical density distribution 5 mm above the stage 12, where the horizontal axis indicates the distance from the center of the stage 12 and the vertical axis indicates the radical density at each position. Calculations based on the graph showed that the average radical density was 3.12×10 16 [1 / m 3 ] and the in-plane uniformity was 1.5[%], resulting in high density and good distribution.

[0057] Additional Notes The above description of the embodiments discloses the following techniques. (Technology 1) a chamber having an opening; a stage disposed within the chamber and on which an object to be processed is placed; a dielectric member that closes the opening; a plasma generating unit provided on the opposite side of the dielectric member from the chamber and configured to generate plasma in the chamber; Equipped with The plasma generating unit has a first coil including a plurality of first conductors connected in parallel to each other, and a first distributor that distributes a first high frequency power supplied to the first coil to each of the first conductors, the first distribution unit includes a first input unit to which the first high frequency power is input, a first branch unit that branches the first high frequency power input to the first input unit into a plurality of first branch lines, and a plurality of second branch units that branch each of the first branch lines into a plurality of second branch lines, Each of the second branch lines is connected to a first application portion of the first conductor, The lengths of the first branch lines are substantially the same as each other, The second branch lines have approximately the same length. (Technology 2) the first conductors each have a shape that spreads in a spiral shape from the first application portion provided on the center side of the dielectric member to a first ground portion provided on the outer periphery side, and are arranged rotationally symmetrically with respect to a center of the dielectric member; the first input portion is disposed on an outer circumferential side of the dielectric member relative to the first branch portion, The plasma processing apparatus according to technique 1, wherein the first branch portion is disposed closer to a center of the dielectric member than the second branch portion. (Technology 3) The plasma processing apparatus according to technique 2, wherein the first branch portion is disposed on an outer periphery side of the center of the dielectric member. (Technology 4) The plasma generating unit includes: a second coil disposed closer to the center of the dielectric member than the first application portion of the first coil and including a plurality of second conductors connected in parallel to each other; a second distributor that distributes the second high frequency power supplied to the second coil to each of the second conductors; and the second distribution unit includes a second input unit to which the second high frequency power is input, and a third branch unit that branches the second high frequency power input to the second input unit into a plurality of third branch lines, each of the third branch lines being connected to a second application unit included in the second conductor, 4. The plasma processing apparatus according to any one of Techniques 1 to 3, wherein the third branch lines have substantially the same length. (Technology 5) The plasma processing apparatus according to technique 4, wherein the third branch portion is disposed on an outer periphery side relative to a center of the dielectric member. (Technology 6) The plasma processing apparatus according to technique 5, wherein the third branch portion is disposed closer to a center of the dielectric member than the first application portion of the first coil. (Technology 7) 7. The plasma processing apparatus according to any one of techniques 4 to 6, wherein a distance between the third branch portion and the dielectric member is smaller than a distance between the first branch portion and the dielectric member. (Technology 8) the plasma generation unit has a first application line connecting the first input unit and the first branch unit, and a second application line connecting the second input unit and the third branch unit, Technique 8. The plasma processing apparatus according to any one of Techniques 4 to 7, wherein the first application line and the second application line are arranged so as not to overlap each other in a plan view. [Industrial Applicability]

[0058] The present disclosure can be used in a plasma processing apparatus. [Explanation of symbols]

[0059] 10: Plasma processing equipment 11: Chamber 11a:Aperture 11b: Exhaust port 12: Stage 12a: Placement surface 13: Dielectric material 14: Cover 14a: First gas hole 14b: Second gas hole 15: Gas inlet 15a: First gas inlet 15b: Second gas inlet passage 16: Plasma generation section 17: First coil 17a: First conductor 17b: 1st application section 17c: 1st grounding part 18: 1st distribution section 18a: First input section 18b: First branch 18c: Second branch 18d: First application line 18e: First branch line 18f: Second branch line 19: Second coil 19a: Second conductor 19b: Second application section 19c: 2nd grounding part 21:Second distribution section 21a: second input section 21b: Third branch 21c: Second application line 21d: 3rd branch line 22:High frequency power supply 23: Matching box 24:Distributor 24a: 1st distribution circuit 24b: 2nd distribution circuit 25: Metal cover 26: Conductive material 27:1st pillar 28: Fixing member 29:Second pillar 31: First heater 32: Second heater 33: First pressing part 33a: First spring 34: Second pressing part 34a: Second spring

Claims

1. a chamber having an opening; a stage disposed within the chamber and on which an object to be processed is placed; a dielectric member that closes the opening; a plasma generating unit provided on the opposite side of the dielectric member from the chamber and configured to generate plasma in the chamber; Equipped with The plasma generating unit has a first coil including a plurality of first conductors connected in parallel to each other, and a first distributor that distributes a first high frequency power supplied to the first coil to each of the first conductors, the first distribution unit includes a first input unit to which the first high frequency power is input, a first branch unit that branches the first high frequency power input to the first input unit into a plurality of first branch lines, and a plurality of second branch units that branch each of the first branch lines into a plurality of second branch lines, Each of the second branch lines is connected to a first application portion of the first conductor, The lengths of the first branch lines are substantially the same as each other, In the plasma processing apparatus, the second branch lines have approximately the same length.

2. the first conductors each have a shape that spreads in a spiral shape from the first application portion provided on the center side of the dielectric member to a first ground portion provided on the outer periphery side, and are arranged rotationally symmetrically with respect to a center of the dielectric member; the first input portion is disposed on an outer circumferential side of the dielectric member relative to the first branch portion, The plasma processing apparatus according to claim 1 , wherein the first branch portion is disposed closer to a center of the dielectric member than the second branch portion.

3. The plasma processing apparatus according to claim 2 , wherein the first branch portion is disposed on an outer periphery side of the center of the dielectric member.

4. The plasma generating unit includes: a second coil that is disposed closer to the center of the dielectric member than the first application portion of the first coil and includes a plurality of second conductors that are connected in parallel to each other; a second distributor that distributes the second high frequency power supplied to the second coil to each of the second conductors; and the second distribution unit includes a second input unit to which the second high frequency power is input, and a third branch unit that branches the second high frequency power input to the second input unit into a plurality of third branch lines, each of the third branch lines being connected to a second application unit included in the second conductor, 4. The plasma processing apparatus according to claim 1, wherein the third branch lines have substantially the same length.

5. The plasma processing apparatus according to claim 4 , wherein the third branch portion is disposed on an outer periphery side of the center of the dielectric member.

6. The plasma processing apparatus according to claim 5 , wherein the third branch portion is disposed closer to a center of the dielectric member than the first applying portion of the first coil.

7. The plasma processing apparatus of claim 4 , wherein a distance between the third branch portion and the dielectric member is smaller than a distance between the first branch portion and the dielectric member.

8. the plasma generating unit has a first application line connecting the first input unit and the first branch unit, and a second application line connecting the second input unit and the third branch unit, The plasma processing apparatus according to claim 4 , wherein the first application line and the second application line are arranged so as not to overlap each other in a plan view.

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