Semiconductor device
The semiconductor device improves reliability by using a receiving portion with protrusions and engaging claws with roughened surfaces to securely attach the cover, addressing issues of detachment and enhancing structural stability.
Patent Information
- Application Number
- JP2023115910
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-07-14
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2043-07-14
AI Technical Summary
Existing semiconductor devices face issues with the reliability of securing the cover to the housing, leading to potential detachment and reduced stability.
The semiconductor device incorporates a receiving portion with protrusions and inclined surfaces, and an engaging portion with claws and roughened surfaces, ensuring a secure fit and enhanced frictional force to prevent the cover from coming off.
The design enhances the reliability of the semiconductor device by maintaining a stable connection between the cover and housing, preventing detachment and improving overall structural integrity.
Smart Images

Figure 2025012799000001_ABST
Abstract
Description
[Technical field]
[0001] The embodiments relate to a semiconductor device. [Background technology]
[0002] 2. Description of the Related Art A semiconductor module having a housing for housing electronic components and a cover for the housing is known as a semiconductor device, and in this type of semiconductor device, the electronic components disposed within the housing are protected. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Publication number 6-033597 [Patent Document 2] Patent No. 6141807 [Patent Document 3] Patent No. 6480990 [Patent Document 4] Patent Publication No. 2021-90009 Summary of the Invention [Problem to be solved by the invention]
[0004] The reliability of the semiconductor device is improved. [Means for solving the problem]
[0005] A semiconductor device according to an embodiment includes a first member having side walls surrounding an opening for accommodating an electronic component and a receiving portion arranged to protrude from the side walls toward the opening, and a second member having an engaging portion extending in a first direction and engaged with the receiving portion, covering at least a portion of the opening, wherein the engaging portion has an extension portion extending in the first direction and a pair of engaging claws protruding from the extension portion at a lower end thereof to one end side and the other end side in a second direction perpendicular to the first direction, each of the engaging claws having a first engaging surface that is continuous with a side surface of the extension portion that intersects with the first direction and is inclined with respect to the first direction, the receiving portion has a pair of protrusion portions arranged to face each of the first engaging surfaces and including a protrusion surface inclined with respect to the first direction, and a lower edge of the first engaging surface and a lower edge of the protrusion surface are inclined in a third direction perpendicular to the first direction and the second direction so as to be higher the closer to the side walls. [Brief description of the drawings]
[0006] [Figure 1] 1 is a perspective view illustrating an example of a structure of a semiconductor device according to an embodiment. [Diagram 2] 1 is a perspective view illustrating an example of a structure of a semiconductor device according to an embodiment. [Diagram 3] 1 is a perspective view illustrating an example of a structure of a receiving portion and an engaging portion of a semiconductor device according to an embodiment. [Figure 4] 4 is a plan view showing an example of a structure of a receiving portion of the semiconductor device according to the embodiment, as viewed from the X direction. FIG. [Diagram 5] 11 is a plan view showing an example of a structure of a portion included in a receiving portion of the semiconductor device according to the embodiment, as viewed from the Y direction. FIG. [Figure 6] 4 is a plan view showing an example of a structure of an engagement portion of the semiconductor device according to the embodiment, as viewed from the X direction. FIG. [Figure 7] 1 is a plan view showing an example of a structure of an engagement portion of the semiconductor device according to the embodiment, as viewed from the Y direction. [Figure 8] 1 is a perspective view illustrating an example of a structure of a receiving portion and an engaging portion of a semiconductor device according to an embodiment. [Figure 9]13 is a perspective view showing an example of a structure of an engagement portion of a semiconductor device according to a modified example, as viewed from the X direction. FIG. [Figure 10] 13 is a plan view showing an example of a structure of an engagement portion of a semiconductor device according to a modified example, as viewed from the Y direction. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0007] Hereinafter, the embodiments will be described with reference to the drawings. In the following description, components having the same functions and configurations are given the same reference numerals. Furthermore, the dimensions and ratios of the drawings are not necessarily the same as those in reality.
[0008] 1. Embodiment A semiconductor device according to an embodiment will be described.
[0009] The semiconductor device according to the embodiment is, for example, a semiconductor module including electronic components, and more specifically, the semiconductor device according to the embodiment is, for example, a power module semiconductor device including a power semiconductor element.
[0010] An example of the overall structure of the semiconductor device according to the embodiment will be described with reference to Fig. 1. Fig. 1 is a perspective view for explaining an example of the structure of the semiconductor device according to the embodiment.
[0011] In the following description, the Z direction corresponds to, for example, a direction perpendicular to a surface of the semiconductor device on which a cover is provided, the X direction is parallel to the surface, and the Y direction is parallel to the surface and perpendicular to the X direction.
[0012] The semiconductor device 1 includes a housing 10, covers 20 and 30, and terminals T1, T2, and T3. In the following description, of the side of the semiconductor device 1 on which the covers 20 and 30 are provided and the side covered by the housing, the side on which the covers 20 and 30 are provided is referred to as the upper side. Also, of the side on which the covers 20 and 30 are provided and the side covered by the housing, the side covered by the housing is referred to as the lower side.
[0013] The housing 10 protects, for example, electronic components provided in the semiconductor device 1 on the side and bottom. The housing 10 includes, for example, a synthetic resin. For example, terminals T1 and T2 are provided on the housing 10. Each of the terminals T1 and T2 has, for example, a connection terminal and a screw hole for screwing a bus bar. For example, power and signals for driving the semiconductor device 1 are supplied to the terminals T1 and T2 from outside the semiconductor device 1. In the example of the embodiment, an example in which two types of terminals T1 and T2 are provided on the housing 10 is shown, but this is not limited to this. The type of terminals provided on the housing 10 may be 0, 1, or 3 or more types. In the following description, the terminal T1 side of the terminals T1 and T2 is referred to as one end side in the Y direction. In addition, the terminal T2 side of the terminals T1 and T2 is referred to as the other end side in the Y direction.
[0014] The covers 20 and 30 are provided, for example, so as to cover at least a part of the upper surface of the housing 10. The covers 20 and 30 are provided, for example, so as to be aligned in the Y direction. The covers 20 and 30 include, for example, a synthetic resin.
[0015] For example, a terminal T3 is provided on the cover 20. The structure of the terminal T3 is similar to the structures of the terminals T1 and T2. Like the terminals T1 and T2, for example, power and signals for driving the semiconductor device 1 are supplied to the terminal T3 from outside the semiconductor device 1. Note that, in the example according to the embodiment, the terminal T3 is provided on the cover 20 and no terminal is provided on the cover 30, but this is not limiting. Each of the covers 20 and 30 may or may not be provided with a terminal.
[0016] Next, an example of the overall structure of the semiconductor device according to the embodiment will be described with reference to Fig. 2. Fig. 2 is a perspective view for explaining an example of the structure of the semiconductor device according to the embodiment. Fig. 2 illustrates the semiconductor device 1 with the covers 20 and 30 removed.
[0017] The housing 10 further includes a side wall 12. The housing 10 includes an opening 11 that is surrounded by the side wall 12 and has an open top. The opening 11 houses a semiconductor unit 40 on which a plurality of semiconductor elements are mounted. The housing 10 further includes receiving portions 50-1 and 50-2 that are provided to protrude from the side wall 12 and are used to fix the cover 20. In the following description, when the receiving portions 50-1 and 50-2 are not distinguished from each other, each of the receiving portions 50-1 and 50-2 is simply called a receiving portion 50. The structure of the receiving portion 50 will be described in detail later. In the following description, the side of the receiving portions 50-1 and 50-2 on which the receiving portion 50-1 is provided is called one end side in the X direction. The side of the receiving portions 50-1 and 50-2 on which the receiving portion 50-2 is provided is called the other end side in the X direction.
[0018] The housing 10 further includes connection parts 13 and 14. The connection parts 13 and 14 are made of, for example, a conductor including a metal. The connection part 13 is provided to electrically connect the semiconductor part 40 and the terminal T1. The connection part 14 is provided to electrically connect the semiconductor part 40 and the terminal T2. Note that in FIG. 2, only a part of the structure of each of the connection parts 13 and 14 is shown.
[0019] The cover 20 further includes engagement parts 60-1 and 60-2. The engagement parts 60-1 and 60-2 are provided corresponding to the receiving parts 50-1 and 50-2 of the housing 10, respectively. The engagement parts 60-1 and 60-2 are made of, for example, synthetic resin. The synthetic resin includes, for example, polyamide. The engagement parts 60-1 and 60-2 are fitted into the receiving parts 50-1 and 50-2, respectively, so that the cover 20 is fixed to the housing 10. In the following description, when the engagement parts 60-1 and 60-2 are not distinguished from each other, each of the engagement parts 60-1 and 60-2 is simply referred to as an engagement part 60. The structure of the engagement part 60 will be described in detail later.
[0020] The cover 20 further includes, for example, a connection portion 21. The connection portion 21 is made of, for example, a conductor including a metal. The connection portion 21 is electrically connected to the terminal T3 in a region not shown. The connection portion 21 is provided to electrically connect the semiconductor portion 40 and the terminal T3.
[0021] The cover 30 is fixed to the housing 10 by, for example, an adhesive member (not shown). Although not shown, the cover 30 may include an engagement portion for fixing the cover 30 to the housing 10, similar to the cover 20. In this case, the housing 10 further includes a receiving portion corresponding to the engagement portion of the cover 30.
[0022] Next, the structure of the receiving portion 50 in the embodiment will be described. The receiving portions 50-1 and 50-2 are provided symmetrically with respect to the YZ plane, for example. Therefore, the structure of the receiving portion 50-1 will be described below with reference to FIG. 3, FIG. 4, and FIG. 5, and the description of the structure of the receiving portion 50-2 will be omitted. FIG. 3 is a perspective view showing an example of the structure of the receiving portion and the engagement portion of the semiconductor device according to the embodiment. FIG. 4 is a plan view showing an example of the structure of the receiving portion of the semiconductor device according to the embodiment as viewed from the X direction. FIG. 5 is a plan view showing an example of the structure of the portion included in the receiving portion 50 according to the embodiment as viewed from the Y direction. More specifically, FIG. 4 shows the structure of the receiving portion 50-1 according to the embodiment as viewed from the other end side toward one end side in the X direction. Also, FIG. 5 shows the structure of the portion included in one end side of the receiving portion 50-1 according to the embodiment as viewed from the other end side toward one end side in the Y direction.
[0023] The receiving portion 50 is provided so as to protrude in the X direction from the side wall 12 toward the opening 11. In addition, two guide portions 70 are provided on the side wall 12, protruding in the X direction from the side wall 12 toward the opening 11. The receiving portion 50 is sandwiched in the Y direction between the two guide portions 70. More specifically, the receiving portion 50 is sandwiched between the side surfaces of the two guide portions 70 at one end side and the other end side in the Y direction, which face each other in the Y direction. In addition, in FIG. 3, the guide portion 70 at the other end side in the Y direction out of the two guide portions 70 is indicated by a dotted line.
[0024] The receiving portion 50 includes a wall portion 51, two protrusions 52, two first slope portions 53, and a second slope portion 54. Note that the wall portion 51 and the second slope portion 54 are omitted in FIG.
[0025] The wall portion 51 has, for example, a plane along the YZ plane. The plane contacts side surfaces of one end and the other end of the guide portion 70 in the X direction.
[0026] Of the two protrusions 52, the protrusion 52 at one end in the Y direction contacts, for example, a side surface of the guide section 70 at one end in the Y direction. Of the two protrusions 52, the protrusion 52 at the other end in the Y direction contacts, for example, a side surface of the guide section 70 at the other end in the Y direction. The protrusions 52 are provided so as to protrude from the wall section 51, for example. As shown in FIG. 5, the protrusions 52 have a thickness W1 in the X direction. The thickness W1 is, for example, 1 mm or more. In addition, the thickness W1 is smaller than the thickness W2 of the portion of the guide section 70 included on the other end side in the X direction from the wall section 51, as shown in FIG. 3. The two protrusions 52 are provided symmetrically with respect to the XZ plane. For this reason, hereinafter, the structure of the protrusion 52 at one end in the Y direction will be mainly described, and a description of the structure of the protrusion 52 at the other end in the Y direction will be omitted.
[0027] The protrusion 52 has protrusion surfaces 52a and 52b. The protrusion surface 52a has, for example, a plane along the YZ plane. As shown in FIG. 4, the protrusion surface 52a has, for example, a triangular shape having a side along the Y direction, a side along the Z direction connected to the side surface of the guide portion 70, and a hypotenuse intersecting the Y direction and the Z direction. In the protrusion surface 52a, the angle between the side along the Z direction and the hypotenuse has an angle θ1 as shown in FIG. 4. The angle θ1 is, for example, smaller than 90°. With the above-mentioned configuration, the two protrusions 52 in the receiving portion 50 are provided so that the width of the area sandwiched by the two protrusions 52 becomes wider from the top to the bottom. The protrusion surface 52b has, for example, a plane inclined with respect to the Y direction. As shown in FIG. 5, the protruding surface 52b has, for example, two sides along the Z direction, and an upper side and a lower side each intersecting with the Z direction, and has a rectangular shape in which the upper side and the lower side become higher from the other end side to one end side in the X direction, as viewed from the Y direction. More specifically, the protruding surface 52b has, for example, a parallelogram shape. The acute angle θ2 between the lower side of the protruding surface 52b and the X direction is, for example, 5° or more and 20° or less (5≦θ2≦20). The protruding surface 52b is a surface that has been roughened by mechanical polishing treatment of the surface, chemical treatment of the surface using a chemical agent, and treatment of the surface portion corresponding to the surface of the inner surface of the mold when molding the receiving part 50. As a result, the surface roughness (Ra) of the protruding surface 52b is, for example, 10 μm (micrometers) or more. In addition, the protruding surface 52b is rougher (has a larger surface roughness) than other surfaces included in the receiving part 50.
[0028] The two first slope portions 53 are provided corresponding to the two protrusions 52, respectively. Each first slope portion 53 is connected to the upper end of the corresponding protrusion portion 52 among the two protrusions 52. The first slope portion 53 at one end side in the Y direction among the two first slope portions 53 contacts the side surface of the guide portion 70 at one end side in the Y direction. The first slope portion 53 at the other end side in the Y direction among the two first slope portions 53 contacts the side surface of the guide portion 70 at the other end side in the Y direction. Each of the two first slope portions 53 is provided so as to protrude from the wall portion 51, for example. The two first slope portions 53 are provided so that the area sandwiched between the two first slope portions 53 is separated by a distance W3 in the Y direction. The distance W3 is, for example, about 10 mm. The two first slope portions 53 are provided symmetrically with respect to the XZ plane. For this reason, the structure of the first slope portion 53 on one end side in the Y direction will be mainly described below, and a description of the structure of the first slope portion 53 on the other end side in the Y direction will be omitted.
[0029] The first slope portion 53 has slope surfaces 53a and 53b. As shown in FIG. 4, the slope surface 53a has, for example, a rectangular shape. As shown in FIG. 5, the slope surface 53a has, for example, a plane along a plane obtained by rotating the YZ plane by a preset angle in the Y direction. More specifically, the slope surface 53a inclines from the bottom to the top so as to approach the side wall 12. For example, the lower end of the slope surface 53a is connected to the upper end of the protruding surface 52a. The slope surface 53a is also connected to the side surface of the guide portion 70 on one end side in the Y direction. The slope surface 53b has, for example, a plane along the XZ plane. The slope surface 53b has, for example, a triangular shape. The lower end of the slope surface 53b is connected to the upper end of the protruding surface 52b.
[0030] The second slope portion 54 has a slope surface 54a. The slope surface 54a has, for example, a plane along a plane obtained by rotating the YZ plane by a preset angle in the Y direction. When the YZ plane is used as a reference, the rotation angle of the slope surface 54a in the Y direction and the rotation angle of the slope surface 53a in the Y direction are, for example, equal. The lower end of the slope surface 54a is connected to the upper end of the slope surface 53a at one end and the other end along the Y direction, respectively. The slope surface 54a has, for example, a rectangular shape. With the above configuration, the slope surface 54a is provided integrally with the two slope surfaces 53a. The second slope portion 54 is provided, for example, in the X direction, on one end side of the X direction from the two protrusions 52 and the two first slope portions 53, similar to the wall portion 51. In addition, the slope surface 54a is connected to the side surfaces of the two guide portions 70 at one end side and the other end side in the Y direction, respectively.
[0031] Next, the engaging portion 60 in the embodiment will be described. The engaging portions 60-1 and 60-2 are provided symmetrically with respect to the YZ plane, for example. Therefore, the structure of the engaging portion 60-1 will be described below with reference to FIG. 3, FIG. 6, and FIG. 7, and the description of the structure of the engaging portion 60-2 will be omitted. FIG. 6 is a plan view showing an example of the structure of the engaging portion of the semiconductor device 1 according to the embodiment as viewed from the X direction. FIG. 7 is a plan view showing an example of the structure of the engaging portion of the semiconductor device according to the embodiment as viewed from the Y direction. More specifically, FIG. 6 shows the structure of the engaging portion 60-1 according to the embodiment as viewed from the other end side toward one end side in the X direction. Also, FIG. 7 shows the structure of the engaging portion 60-1 according to the embodiment as viewed from one end side toward the other end side in the Y direction.
[0032] The engagement portion 60 has a plate-like structure having a flat surface along the YZ plane. As shown in Fig. 7, the engagement portion 60 has a thickness W4 in the X direction. The thickness W4 is, for example, equal to or less than the thickness W1. The thickness W4 is, for example, about 1 mm.
[0033] The engaging portion 60 includes an extending portion 61 and a pair of engaging claws 62. The structure of the engaging portion 60 is, for example, symmetrical with respect to the XZ plane.
[0034] The extension portion 61 has a rectangular shape when viewed from the X direction as shown in Fig. 6. The extension portion 61 is a portion surrounded by a dotted line in Fig. 6. The width W5 of the extension portion 61 in the Y direction is equal to or smaller than the interval W3.
[0035] The engagement claws 62 are provided so as to protrude symmetrically from the extension portion 61 to one end and the other end in the Y direction. With this configuration, the engagement portion 60 has a spatula-like shape that is symmetrical with respect to the XZ plane. As a result, the width W6 in the Y direction of the lower side of the engagement portion 60 in the portion including the two engagement claws 62 is wider than the interval W3 and the width W5. Due to the above-described symmetrical structure of the engagement claws 62, the following mainly describes the structure of the engagement claw 62 on one end side in the Y direction, and a description of the structure of the engagement claw 62 on the other end side in the Y direction will be omitted.
[0036] The engagement claw 62 has, for example, an engagement surface 62a along the YZ plane, and engagement surfaces 62b and 62c that intersect with the YZ plane.
[0037] The engagement surface 62a has a trapezoid shape including two sides along the Z direction, a side along the Y direction, and a hypotenuse that intersects with the Y and Z directions. The engagement surface 62a on one end side in the Y direction is provided so that its width in the Z direction narrows from the other end side in the Y direction toward the one end side. Angle θ3 formed by the hypotenuse of the engagement surface 62a and the boundary line of the engagement claw 62 and the extension portion 61 along the Z direction is equal to, for example, angle θ1.
[0038] The engagement surface 62b is connected to a side surface along the XZ plane of the extension portion 61. In addition, as described above, the oblique side of the engagement surface 62a is inclined, so that the engagement surface 62b has a plane inclined with respect to the Y direction, similar to the protruding surface 52b. As shown in FIG. 7, the engagement surface 62b has, for example, two sides along the Z direction, and an upper side and a lower side each intersecting with the Z direction, and has a quadrangular shape in which the upper side and the lower side become higher from the other end side to one end side in the X direction. More specifically, the engagement surface 62b has, for example, a parallelogram shape. An angle θ4 between the lower side of the engagement surface 62b and the X direction is greater than 0°. The angle θ4 is, for example, 5° or more and 20° or less (5≦θ4≦20). The angle θ4 is, for example, equal to the angle θ2. The engagement surface 62b is a surface that has been roughened by mechanical polishing, chemical treatment using chemicals, and treatment of the portion of the inner surface of the mold corresponding to the engagement surface when molding the engagement part 60. As a result, the surface roughness (Ra) of the engagement surface 62b is set to, for example, 10 μm or more. Furthermore, the engagement surface 62b is rougher (has a larger surface roughness) than the other surfaces included in the engagement part 60. Furthermore, as shown in FIG. 7, the engagement surface 62c has, for example, a quadrangle shape having two sides along the Z direction, a side along the X direction, and sides intersecting the X and Z directions.
[0039] Next, a structure in which the engagement portion 60 is fixed to the receiving portion 50 in the semiconductor device 1 according to the embodiment will be described with reference to Fig. 8. Fig. 8 is a perspective view showing an example of the structure of the receiving portion and the engagement portion of the semiconductor device according to the embodiment.
[0040] In the semiconductor device 1 according to the embodiment, the engaging portion 60 is fixed to the receiving portion 50 by sliding the engaging portion 60 downward. More specifically, as the engaging portion 60 slides downward, the engaging portion 60 deforms along the planes of the protruding surface 52a, the slope surface 53a, and the second slope portion 54. Then, for example, when the engaging portion 60 is slid further downward so that the engaging claw 62 is positioned below the first slope portion 53, the engaging portion 60 returns to its original shape. At the same time, a portion of the engaging portion 60 is disposed between the two protruding portions 52 and the two first slope portions 53.
[0041] Due to the configurations of the receiving portion 50 and the engaging portion 60 as described above, when the engaging portion 60 is fitted into the receiving portion 50, the engaging surface 62b can be in full contact with the protruding surface 52a.
[0042] According to the embodiment, it is possible to improve the reliability of the semiconductor device. The improvement in reliability achieved by the semiconductor device 1 according to the embodiment will be described below.
[0043] The semiconductor device 1 according to the embodiment includes a housing 10 having an opening 11 for accommodating a semiconductor part 40, a receiving part 50 provided to protrude from a side wall 12 inside the opening 11 and into which an engaging part 60 is fitted, and a cover 20 having the engaging part 60 extending in the Z direction. The engaging part 60 has an extension part 61 and a pair of engaging claws 62 protruding from the extension part 61 in the Y direction at the lower end of the extension part 61. Each engaging claw 62 has an engaging surface 62b that is continuous with the side surface of the extension part 61 and is inclined with respect to the Z direction. The receiving part 50 has a protrusion part 52 provided to face the engaging surface 62b and having a protruding surface 52b inclined with respect to the Z direction. In addition, the lower side of the engaging surface 62b and the lower side of the protruding surface 52b are inclined along the X direction so as to be higher as they approach the side wall. With this configuration, when the engaging portion 60 is fixed to the receiving portion 50, it is possible to prevent the engaging portion 60 from coming off from the receiving portion 50 due to the engaging surface 62b being shifted toward the opening portion 11. Therefore, by preventing the cover 20 of the semiconductor device 1 from coming off, it is possible to improve the reliability of the semiconductor device 1.
[0044] Supplementally, when the protruding surface of the receiving part is rectangular with a lower side along the X direction as viewed from the Y direction, the engaging surface of the engaging part that contacts the protruding surface is also rectangular with a lower side along the X direction as viewed from the Y direction. In such a case, the balance of the forces acting on the engaging part and the receiving part may be lost due to the application of force to the cover and the positional deviation of the receiving part and the engaging part when the engaging part is fixed to the receiving part, and the engaging surface may be shifted toward the opening side of the housing. This may cause the engaging part to come off from the receiving part. For example, the cover of the semiconductor device may come off even if no force that would physically break the engaging part is applied.
[0045] According to the embodiment, the protruding surface 52b of the receiving portion 50 and the engaging surface 62b of the engaging portion 60 each have a parallelogram shape having, for example, two sides along the Z direction when viewed from the Y direction. Also, the lower sides of the protruding surface 52b and the engaging surface 62b are each configured to be higher toward the side wall 12 when viewed from the Y direction. With this configuration, when the engaging portion 60 is fixed to the receiving portion 50, for example, the balance between the supporting force of the receiving portion 50 and the tensile force of the engaging portion 60 is lost, and thus it is possible to prevent the engaging portion 60 from coming off the receiving portion 50.
[0046] In addition, the protruding surface 52b and the engaging surface 62b are roughened surfaces. This makes it possible to suppress a decrease in the friction coefficient of the protruding surface 52b and the engaging surface 62b, and to improve the frictional force acting between the protruding surface 52b and the engaging surface 62b. This provides an anchor effect, making it possible to suppress the engaging portion 60 from coming off from the receiving portion 50.
[0047] In addition, the angle θ2 between the lower side of the protruding surface 52b and the X direction and the angle θ4 between the lower side of the engaging surface 62b and the X direction are equal to each other. This allows the engaging surface 62b to come into contact with the protruding surface 52b entirely. This effectively improves the frictional force acting between the protruding surface 52b and the engaging surface 62b.
[0048] In the semiconductor device 1 according to the embodiment, the angles θ2 and θ4 are each 5° or more and 20° or less. If the angles θ2 and θ4 are 5° or more, the engagement portion 60 is effectively prevented from coming off the receiving portion 50. If the angles θ2 and θ4 are 20° or less, damage to the receiving portion 50 and the engagement portion 60 due to a decrease in strength or the like is effectively prevented.
[0049] 2. Variations Next, a semiconductor device according to a modification will be described below. In the following, the description of the same configuration as the embodiment will be omitted, and the configuration different from the embodiment will be mainly described.
[0050] In the above embodiment, the engaging claw 62 of the engaging portion 60 includes one engaging surface 62b and one engaging surface 62c when viewed from the Y direction, but this is not limited to the above. The engaging claw 62 of the engaging portion 60 may include two engaging surfaces 62b when viewed from the Y direction.
[0051] In the semiconductor device 1 according to the modification, the configuration of the housing 10 including the receiving portion 50, the terminal T3 and the connection portion 21 in the cover 20, and the cover 30 are the same as those of the embodiment. In the following, the structure of the engagement portion 60 of the semiconductor device 1 according to the modification, which is different from the structure of the engagement portion 60 of the semiconductor device 1 according to the embodiment, will be described with reference to FIG. 9 and FIG. 10. FIG. 9 is a perspective view showing an example of the structure of the engagement portion of the semiconductor device according to the modification as viewed from the X direction. FIG. 10 is a plan view showing an example of the structure of the engagement portion of the semiconductor device according to the modification as viewed from the Y direction. More specifically, FIG. 10 shows the structure of the engagement portion 60-1 according to the modification as viewed from one end side toward the other end side in the Y direction. Note that the structure of the engagement portion of the semiconductor device according to the modification as viewed from the X direction can be substantially similar to the structure of the engagement portion of the semiconductor device according to the embodiment as viewed from the X direction, which was described with reference to FIG. 6, and therefore the description thereof will be omitted.
[0052] The structure of the extension 61 of the engagement portion 60 according to the modified example is substantially similar to the structure of the extension 61 of the engagement portion 60 according to the embodiment.
[0053] In the modified example, the engagement claw 62 has engagement surfaces 62b1, 62b2, and 62c that intersect with the YZ plane. The engagement surfaces 62b1 and 62b2 are roughened by mechanical polishing, chemical treatment using chemicals, and treatment of the parts of the inner surface of the mold corresponding to these surfaces when molding the engagement part 60. As a result, the surface roughness (Ra) of the engagement surfaces 62b1 and 62b2 is, for example, 10 μm or more. In addition, the engagement surfaces 62b1 and 62b2 are rougher (have higher surface roughness) than the other surfaces included in the engagement part 60. The engagement surface 62b1 is provided to correspond to the protruding surface 52b. As shown in FIG. 10, the engagement surface 62b1 has, for example, two sides along the Z direction and upper and lower sides that intersect with the Z direction, and has a rectangular shape in which the upper and lower sides become higher from the other end side to one end side in the X direction. More specifically, the engagement surface 62b1 has, for example, a parallelogram shape. The angle between the lower side of the engagement surface 62b1 and the X direction is θ4. The engagement surface 62b2 is provided symmetrically to the engagement surface 62b1 with respect to the YZ plane, as shown in Fig. 10. Due to the configuration of the engagement surfaces 62b1 and 62b2 as described above, the engagement surface 62c has, for example, a pentagon shape including a side along the X direction, two sides along the Z direction, and two sides intersecting the X direction and the Z direction.
[0054] As with the embodiment, the reliability of the semiconductor device 1 can be improved with this modification as well.
[0055] In addition, according to the modified example, the engagement surfaces 62b1 and 62b2 are provided symmetrically with respect to the YZ plane, which improves versatility. That is, for example, the cover 20 can be manufactured without distinguishing the orientation of the engagement portions 60-1 and 60-2.
[0056] 3. Other Although some embodiments have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]
[0057] Reference Signs List 1: semiconductor device, 10: housing, 20, 30: cover, 40: semiconductor portion, 50: receiving portion, 60: engaging portion.
Claims
1. a first member having a side wall surrounding an opening for receiving an electronic component and a receiving portion provided so as to protrude from the side wall toward the opening; a second member extending in a first direction, having an engagement portion that is fitted to the receiving portion, and covering at least a portion of the opening; Equipped with The engaging portion has an extending portion extending in the first direction, and a pair of engaging claws protruding from a lower end of the extending portion to one end side and the other end side in a second direction perpendicular to the first direction, Each of the engagement claws has a first engagement surface that is continuous with a side surface of the extension portion that intersects with the first direction and is inclined with respect to the first direction, The receiving portion has a pair of protruding portions including protruding surfaces inclined with respect to the first direction, the protruding portions being provided so as to face the first engagement surfaces, respectively; a lower side of the first engagement surface and a lower side of the protruding surface are inclined in a third direction perpendicular to the first direction and the second direction so as to become higher toward the side wall; Semiconductor device.
2. a lower side of the first engagement surface and a lower side of the protruding surface are inclined at an angle of 5° to 20° with respect to the third direction; The semiconductor device according to claim 1.
3. The first engagement surface and the protrusion surface are roughened surfaces. The semiconductor device according to claim 1.
4. The surface roughness of the first engagement surface and the surface roughness of the protruding surface are 10 micrometers or more.
4. The semiconductor device according to claim 3.
5. The engagement claw further includes a second engagement surface that is continuous with a side surface of the extension portion and is inclined with respect to the first direction, A lower side of the second engagement surface is inclined with respect to the third direction so as to become higher as the lower side becomes farther away from the side wall. The semiconductor device according to claim 1.
6. The engagement portion is symmetrical with respect to a plane including the first direction and the second direction.
6. The semiconductor device according to claim 5.
7. The engagement portion is symmetrical with respect to a plane including the first direction and the third direction. The semiconductor device according to claim 1.
8. The electronic component is a power semiconductor. The semiconductor device according to claim 1.
9. a first member having a side wall surrounding an opening for receiving an electronic component and a receiving portion provided so as to protrude from the side wall toward the opening; a second member extending in a first direction, having an engagement portion that is fitted to the receiving portion, and covering at least a portion of the opening; Equipped with The engaging portion has an extending portion extending in the first direction, and a pair of engaging claws protruding from a lower end of the extending portion to one end side and the other end side in a second direction perpendicular to the first direction, Each of the engagement claws has an engagement surface that is continuous with a side surface of the extension portion that intersects with the first direction and is inclined with respect to the first direction, The receiving portion has a pair of protrusions including protrusion surfaces inclined with respect to the first direction, the protrusion surfaces being provided to face the engagement surfaces, respectively; The engagement surface and the protrusion surface are roughened surfaces. Semiconductor device.
10. The surface roughness of the engagement surface and the surface roughness of the protrusion surface are 10 micrometers or more.
10. The semiconductor device according to claim 9.
Citation Information
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