Semiconductor device, display, photoelectric conversion device, and electronic apparatus

Abstract

To provide a semiconductor device in which a terminal of a semiconductor chip is satisfactorily flip-chip mounted to an electrode of a semiconductor substrate.SOLUTION: A semiconductor device includes a semiconductor chip in which terminal groups including a plurality of terminals disposed along a first direction are disposed along a second direction intersecting the first direction. At least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, a third terminal adjacent to the second terminal on the opposite side of the first terminal in the first direction, and a fourth terminal adjacent to the third terminal on the opposite side of the second terminal in the first direction. The interval between the first terminal and the second terminal in the first direction is wider than the interval between the second terminal and the third terminal in the first direction, and the interval between the second terminal and the third terminal in the first direction is wider than the interval between the third terminal and the fourth terminal in the first direction.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a semiconductor device, a display device, a photoelectric conversion device, and an electronic device. [Background technology]

[0002] In electronic device products, there is a demand for smaller, lighter, and more powerful products, and the number of external output terminals is rapidly increasing. With the increase in the number of external output terminals, conventional wire bonding connections have limitations on how narrow the pitch of the connection terminals can be, resulting in larger electronic devices. Therefore, flip-chip mounting technology for semiconductor chips is attracting attention. In flip-chip mounting, bonding pads that have been miniaturized in the semiconductor process can be connected to each other via connecting parts such as bumps, making it possible to significantly narrow the pitch of external output terminals compared to conventional wire bonding connections. Bonding methods for flip-chip mounting include ultrasonic bonding and solder bonding. In the manufacture of display devices such as organic electroluminescence (EL), a bonding method that allows bonding at low temperatures is generally used to suppress deterioration of elements due to heat during the bonding process.

[0003] In a display device, for example, the terminals of a semiconductor chip are flip-chip mounted to the electrodes of a semiconductor substrate, but electrical connection problems (such as disconnection or high electrical resistance) may occur between the electrodes of the semiconductor substrate and the terminals of the semiconductor chip.

[0004] ACF is a film in which conductive particles are dispersed in a thermosetting resin. In a bonding method using ACF as a bonding member, heat and pressure are applied to a member in which ACF is placed between an electrode and a terminal, so that the conductive particles are sandwiched between the electrode and the terminal, and at the same time, the thermosetting resin proceeds to thermally harden. This provides an electrical connection between the electrode and the terminal. More specifically, the thermosetting resin is crushed by the heat and pressure and pushed out to the outside of the semiconductor chip, reducing the thickness of the thermosetting resin and allowing the conductive particles to be sandwiched between the electrode and the terminal. This provides an electrical connection between the electrode and the terminal.

[0005] However, in the case of a terminal array (and an electrode array corresponding to the terminal array) in which terminal groups with short inter-terminal distances are arranged in multiple rows, the fluidity of the thermosetting resin in the column direction is poor because the terminals are narrow. As a result, the thermosetting resin is likely to accumulate in the center of the semiconductor chip, and it is difficult to reduce the thickness of the thermosetting resin even when heat and pressure are applied, making it easy for poor electrical connections to occur between the electrodes and terminals. Because the fluidity of the thermosetting resin in the column direction is poor, the thermosetting resin must be extruded in the row direction, but in the case of a semiconductor chip that is elongated in the row direction, it is difficult to extrude the thermosetting resin in the row direction, making it particularly easy for poor electrical connections to occur between the electrodes and terminals.

[0006] In ultrasonic bonding, adhesives such as epoxy resin or acrylic resin, and thermosetting films such as NCF (non-conductive adhesive film) may be used to improve bonding strength and reliability. In this case, too, as in the above bonding using ACF, the fluidity of the resin is poor in the center of the semiconductor chip, and electrical connection failures between the electrodes and terminals are likely to occur.

[0007] In the technique disclosed in Patent Document 1, a dummy bump is disposed between two groups of bumps. In the technique disclosed in Patent Document 2, a plurality of bumps are disposed so as to surround the center of a semiconductor chip. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2016-127259 A [Patent Document 2] JP 2004-356566 A Summary of the Invention [Problem to be solved by the invention]

[0009] In the configuration described in Patent Document 1, the fluidity of the resin cannot be improved, and electrical connection failures between the electrodes and the terminals are likely to occur. Also, in the configuration described in Patent Document 2, there is no escape route for the resin, and therefore the fluidity of the resin is very poor, and electrical connection failures between the electrodes and the terminals are very likely to occur.

[0010] The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device in which terminals of a semiconductor chip are favorably flip-chip mounted to electrodes of a semiconductor substrate. [Means for solving the problem]

[0011] The semiconductor device of the present invention has a semiconductor chip in which terminal groups including a plurality of terminals arranged along a first direction are arranged in a second direction intersecting the first direction, and at least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, a third terminal adjacent to the second terminal on the opposite side of the first terminal in the first direction, and a fourth terminal adjacent to the third terminal on the opposite side of the second terminal in the first direction, and the distance between the first terminal and the second terminal in the first direction is wider than the distance between the second terminal and the third terminal in the first direction, and the distance between the second terminal and the third terminal in the first direction is wider than the distance between the third terminal and the fourth terminal in the first direction. Effect of the Invention

[0012] According to the present invention, it is possible to provide a semiconductor device in which the terminals of a semiconductor chip are favorably flip-chip mounted to the electrodes of a semiconductor substrate. [Brief description of the drawings]

[0013] [Figure 1] 1A and 1B are schematic and cross-sectional views of semiconductor devices according to first to seventh embodiments. [Diagram 2] FIG. 1 is a plan view of a conventional semiconductor chip. [Diagram 3] FIG. 1 is an explanatory diagram of a method for manufacturing the semiconductor device according to the first to seventh embodiments. [Figure 4] 1A and 1B are plan views of a semiconductor chip according to a first embodiment. [Diagram 5] 11A and 11B are plan views of a semiconductor chip according to a second embodiment. [Figure 6] FIG. 11 is a plan view of a semiconductor chip according to a third embodiment. [Figure 7] FIG. 11 is a plan view of a semiconductor chip according to a fourth embodiment. [Figure 8] FIG. 13 is a plan view of a semiconductor chip according to a fifth embodiment. [Figure 9] FIG. 13 is a plan view of a semiconductor chip according to a sixth embodiment. [Figure 10] FIG. 13 is a plan view of a semiconductor chip according to a seventh embodiment. [Figure 11] FIG. 13 is a schematic diagram showing a display device according to embodiment 8. [Figure 12] 13 is a schematic diagram showing an imaging device and an electronic device according to an eighth embodiment. FIG. [Figure 13] FIG. 13 is a schematic diagram showing a display device according to embodiment 8. [Figure 14] 13 is a schematic diagram showing an illumination device and a moving object according to an eighth embodiment. FIG. [Figure 15] FIG. 13 is a schematic diagram showing a wearable device according to an eighth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description and drawings, common reference numerals are used for configurations common to multiple drawings. Therefore, common configurations will be described with mutual reference to multiple drawings, and the configurations to which common reference numerals are used will be described. The explanation of the above will be omitted as appropriate.

[0015] FIG. 1(a) is a plan view of the semiconductor device 800. The arrangement in the plan view is the arrangement when the semiconductor device 800 is viewed from a direction perpendicular to the main surface of the semiconductor substrate 100 (normal direction of the main surface). In the plan view, it is assumed that a member overlapped with another member can be seen through. In the plan view of the main surface of the semiconductor substrate 100, the counter substrate 200 overlaps the semiconductor substrate 100. The direction in which the counter substrate 200 faces the semiconductor substrate 100 (facing direction) is a direction perpendicular to the main surface of the semiconductor substrate 100 (normal direction of the main surface). The semiconductor substrate 100 has an effective element region AA in which effective elements are provided on the first main surface of the substrate 10, and a peripheral region PA located around the effective element region AA. The effective element region AA is rectangular, and the diagonal length is, for example, 5 mm to 50 mm. The peripheral region PA may include a peripheral circuit region (not shown) in which peripheral circuits are arranged. For example, in the case of a display device, the peripheral circuits include a drive circuit for driving the effective pixels, and a processing circuit (e.g., a DAC (digital-analog conversion circuit)) for processing signals to be input to the effective pixels. The peripheral area PA is located outside the effective element area AA and may include a non-effective element area (not shown) in which non-effective elements are provided. The non-effective elements are elements that do not function as effective elements, and are dummy elements, reference elements, test elements, monitor elements, etc. The resin layer 150 that connects the counter substrate 200 and the semiconductor substrate 100 is provided in the peripheral area PA. The connection may be interpreted as adhesion or bonding. In the peripheral area PA, the wiring substrate 400 and the semiconductor chip 300 are electrically connected to the semiconductor substrate 100.

[0016] FIG. 1(b) is a cross-sectional view of the semiconductor device 800 taken along X-X' in FIG. 1(a). The semiconductor device 800 includes a semiconductor substrate 100, a counter substrate 200, a resin layer 150, a wiring substrate 400, and a semiconductor chip 300. The counter substrate 200 is disposed facing the semiconductor substrate 100 with a gap G therebetween. The resin layer 150 connects the counter substrate 200 and the semiconductor substrate 100. The wiring substrate 400 is electrically connected to the semiconductor substrate 100 via an electrode portion 31 and a connection member 600. The semiconductor chip 300 is electrically connected to the semiconductor substrate 100 via electrodes 32, 33 and a connection member 500. A semiconductor element 20, a wiring layer 30, an interlayer insulating layer 40, and a functional element 50 are provided in an effective element area AA of the semiconductor substrate 100. A peripheral circuit (not shown) is provided in a peripheral area PA of the semiconductor substrate 100. The connecting members 500, 600 are made of a conductive material such as ACF (anisotropic conductive adhesive film), NCF (non-conductive adhesive film), epoxy resin, acrylic resin, etc. The counter substrate 200 is disposed opposite to the semiconductor substrate 100 so as to cover the entire active element area AA and a part of the peripheral area PA. The resin layer 150 is provided in the peripheral area PA of the semiconductor substrate 100 and connects the semiconductor substrate 100 and the counter substrate 200.

[0017] A gap G is provided between the semiconductor substrate 100 and the opposing substrate 200. If it is necessary to suppress the intrusion of moisture into the functional element 50, the gap G may be filled with a resin. The resin to be filled may be the same as or different from the resin of the resin layer 150. Any transparent resin may be used as the resin to be filled, such as an acrylic resin or an epoxy resin.

[0018] The substrate 10 is made of a semiconductor such as single crystal silicon. The semiconductor element 20 is a transistor or a diode, at least a part of which is provided in the substrate 10. The wiring layer 30 includes a multi-layer wiring layer such as an aluminum layer or a copper layer, and a plug such as a via plug or a contact plug. The electrodes 31, 32, and 33 may be formed in the same layer as the wiring layer 30.

[0019] The interlayer insulating layer 40 includes a plurality of interlayer insulating layers, and is made of a silicon oxide layer, a silicon nitride layer, a silicon carbide layer, and the like. Note that silicon oxynitride and silicon carbonitride are considered to be types of silicon nitride, since they are mainly composed of nitrogen and silicon, respectively. A functional element 50 is provided in the effective element area AA of the semiconductor substrate 100. The functional element 50 may be a display element or or a photoelectric conversion element, and in the case of a display element, it is an EL element in an ELD (electroluminescence display), a liquid crystal element in an LCD (liquid crystal display), or a reflective element in a DMD (digital mirror device).

[0020] The functional element 50 is connected to the wiring layer 30 through a via (not shown) provided in the interlayer insulating layer 40, and is electrically connected to the semiconductor element 20 through the wiring layer 30. A passivation film for suppressing the intrusion of moisture, oxygen, and the like, a color filter layer, a lens structure, and the like may also be provided on the functional element 50.

[0021] The semiconductor substrate 100 is constructed as described above, the resin layer 150 is provided in the peripheral area PA of the semiconductor substrate 100, and the counter substrate 200 is bonded to the semiconductor substrate 100 by the resin layer 150. The counter substrate 200 can be made of any light-transmitting material such as glass or acrylic, but it is preferable to use alkali-free glass. The thickness of the counter substrate 200 is, for example, 0.7 mm. It is also preferable to form an anti-reflection film (AR film) on one or both of the main surfaces of the counter substrate 200. By forming the AR film, the efficiency of light entering the functional element 50 increases when the functional element 50 is a photoelectric conversion element, and the efficiency of display light extraction from the functional element 50 increases when the functional element 50 is a display element.

[0022] The semiconductor chip 300 is connected to the electrode portions 32 and 33 arranged in the peripheral area PA of the semiconductor substrate 100 via a connection member 500, and the wiring board 400 is connected to the electrode portion 31 via a connection member 600.

[0023] The semiconductor chip 300 is a semiconductor chip provided with a driving circuit, and terminals 451, 452 such as Au bumps or Cu bumps are provided on the surface connected to the semiconductor substrate 100. FIG. 2 is a plan view of the semiconductor chip 300. FIG. 2 shows a conventional configuration (basic configuration), and the configuration according to the embodiment of the present invention will be described later. The terminal 451 is an output terminal, and the terminal 452 is an input terminal. In general, the number of output terminals is large, and a desired number of output terminals are arranged by reducing the size of the output terminals or increasing the number of rows of the output terminals (the number of output terminal groups including a plurality of output terminals arranged along the row direction). In general, when about 2,000 to 10,000 output terminals are arranged, the length of one side of the output terminal is about 10 μm to 100 μm, and the height of the output terminal is about 3 μm to 50 μm. The interval between the output terminals is about 10 μm to 100 μm, and the number of rows of the output terminals (the number of output terminal groups) is about 3 to 20 rows. The electrode section 33 includes a plurality of electrodes to which a plurality of output terminals 451 are respectively connected via a connection member 500. In general, the number of input terminals is smaller than the number of output terminals, and since low electrical resistance is required for the input terminals, it is preferable that the size of the input terminals is large. In general, when approximately 300 to 2,000 input terminals are arranged, the length of one side of the input terminal is approximately 10 μm to 200 μm, and the height of the input terminal is approximately 3 μm to 50 μm. The interval between the input terminals is approximately 10 μm to 50 μm, and the number of rows of the input terminals (the number of input terminal groups including a plurality of input terminals at different positions in the row direction) is approximately 1 to 5 rows. The electrode section 32 includes a plurality of electrodes to which a plurality of input terminals 452 are respectively connected via a connection member 500.

[0024] The wiring board 400 is a flexible circuit board such as a glass epoxy board or a polyimide film provided with a wiring pattern, and the surface that connects to the semiconductor substrate 100 is provided with terminals 453 such as Au bumps or Cu bumps.

[0025] The connection member 500 between the semiconductor substrate 100 and the semiconductor chip 300, and the connection member 600 between the semiconductor substrate 100 and the wiring substrate 400 are each made of ACF, NCF, epoxy resin, acrylic resin, or the like. 00 and terminals of the semiconductor chip 300, and the electrodes of the semiconductor substrate 100 and terminals of the wiring substrate 400 are electrically connected. ACF is a film in which conductive particles are dispersed in a thermosetting resin, and can be interpreted as an anisotropic conductive resin. As the thermosetting resin, epoxy resin, acrylic resin, or the like is used. The size and number of conductive particles are selected according to the size of the terminal, and for example, in a typical ACF, the size (diameter) of the conductive particles is about 1 μm to 50 μm, and the number (area density) of conductive particles is 10,000 to 100,000 pieces / mm 2 By using NCF, epoxy resin, or acrylic resin, the connection strength and reliability of the electrodes and terminals can be improved.

[0026] A method for manufacturing an organic EL display device, which is an example of the semiconductor device 800, will be described with reference to FIGS. 3(a) to 3(f).

[0027] FIG. 3(a) is a cross-sectional view of the semiconductor substrate 100 at the completion of the manufacturing process. The semiconductor substrate 100 includes a substrate 10. The substrate 10 may be made of silicon, for example. A semiconductor element 20 such as a transistor is formed on the main surface of the substrate 10. An interlayer insulating layer 40 is formed on the main surface of the substrate 10 on which the semiconductor element 20 is formed. Silicon oxide, silicon nitride, silicon carbide, or the like is used for the interlayer insulating layer 40. A contact plug (not shown) electrically connected to the semiconductor element 20 is disposed in the interlayer insulating layer 40. A conductive member such as tungsten is embedded in the contact plug. A wiring layer 30 electrically connected to the semiconductor element 20 via the contact plug is provided inside the interlayer insulating layer 40. A metal material such as aluminum or copper is used for the wiring layer 30. In order to suppress metal diffusion into the interlayer insulating layer 40, a barrier metal such as Ti, Ta, TiN, or TaN may be provided at the interface between the interlayer insulating layer 40 and the wiring layer 30. Electrode parts 31, 32, and 33 are formed in the same layer as any of the wiring layer 30 in the peripheral region PA of the substrate 10. Openings (not shown) are provided on the electrode parts 31, 32, and 33 by removing the interlayer insulating layer 40, and the electrode parts 31, 32, and 33 are exposed.

[0028] In the effective element region AA, an organic EL element is provided on the interlayer insulating layer 40 as the functional element 50. The functional element 50 is electrically connected to the wiring layer 30 via a through hole (not shown). The functional element 50 is composed of a pixel electrode, a counter electrode, and an organic light-emitting layer (all not shown) provided between the pixel electrode and the counter electrode. In order to facilitate the injection and transport of holes from the pixel electrode, a hole injection layer and a hole transport layer may be formed between the organic light-emitting layer and the pixel electrode. In addition, in order to facilitate the injection and transport of electrons from the counter electrode, an electron transport layer and an electron injection layer may be formed between the organic light-emitting layer and the counter electrode. A sealing passivation film (not shown) for suppressing the penetration of moisture may be formed on the functional element 50. A color filter layer and a lens structure for increasing the light extraction efficiency may be provided on the passivation film.

[0029] 3(b) is a cross-sectional view of the semiconductor chip 300. Electrical wiring is formed on the semiconductor substrate by a semiconductor process or the like, opening pads for electrical connection are formed, and terminals 451, 452 made of Au, Cu, or the like are formed by performing electrolytic plating on the opening pads.

[0030] As shown in FIG. 3(c), a connection member 500 is attached onto the electrode portions 32, 33 of the semiconductor substrate 100, and the terminals 451, 452 (multiple terminals) of the semiconductor chip 300 are thermocompression bonded to the electrode portions 32, 33 (multiple electrodes) of the semiconductor substrate 100 via the connection member 500. As a result, the terminals 451, 452 (multiple terminals) of the semiconductor chip 300 are electrically connected to the electrode portions 32, 33 (multiple electrodes) of the semiconductor substrate 100. The thermocompression bonding temperature is preferably a temperature at which the functional element 50 is not deteriorated by heat, for example, 100° C. For example, the connection member is ACF, which contains conductive particles in an epoxy resin binder. Then, the conductive Terminals 451, 452 (multiple terminals) of the semiconductor chip 300 are electrically connected to electrode portions 32, 33 (multiple electrodes) of the semiconductor substrate 100 by the conductive particles. The connection method is not particularly limited, and may be ultrasonic bonding. NCF, epoxy resin, or acrylic resin may be used as the connection member 500, which can improve the connection strength and reliability between the electrodes and the terminals.

[0031] 3(d), terminals 453 (multiple terminals) of wiring board 400 are thermocompression-bonded or ultrasonically compressed to electrode portions 31 (multiple electrodes) of semiconductor substrate 100 via connection member 600. As a result, terminals 453 (multiple terminals) of wiring board 400 are electrically connected to electrode portions 31 (multiple electrodes) of semiconductor substrate 100. Wiring board 400 is, for example, a flexible circuit board in which a copper wiring pattern is formed on a polyimide base material. Note that connection member 600 (underfill resin) may be omitted, but providing connection member 600 can improve the connection strength and reliability between the electrodes and terminals.

[0032] As shown in FIG. 3(e), a resin layer 150 is applied to the peripheral area PA of the semiconductor substrate 100. The resin layer 150 is applied so as to surround the active element area AA. The resin layer 150 needs to be formed to a thickness that prevents the semiconductor substrate 100 from contacting the opposing substrate 200, and is preferably formed from a resin having a viscosity of 10000 mPa·s or more. Alternatively, a resin kneaded with glass beads or resin beads of a predetermined size as spacers may be used for the resin layer 150. This makes it possible to easily control the thickness of the resin layer 150. For the resin layer 150, any resin material such as epoxy resin or acrylic resin is used. For example, the resin layer 150 is formed by applying epoxy resin kneaded with resin beads of 10 μm to 100 μm, preferably 30 μm, by a dispense method.

[0033] As shown in FIG. 3(f), the counter substrate 200 is provided on the resin layer 150 so as to face the main surface of the semiconductor substrate 100, and the resin layer 150 is cured. When the counter substrate 200 is provided on the resin layer 150, the resin layer 150 spreads in the horizontal direction (the left and right direction in the figure) due to the load of the counter substrate 200. Therefore, the load of the counter substrate 200 is controlled so that the resin layer 150 does not wet and spread to the effective element area AA of the semiconductor substrate 100. The resin layer 150 is cured, for example, by ultraviolet light. The counter substrate 200 can be any transparent substrate such as glass or acrylic, and can be, for example, non-alkali glass. The resin layer 150 after curing has a film thickness of, for example, 10 μm to 100 μm. The organic EL display device is completed by the above steps.

[0034] (Embodiment 1) A first embodiment will be described. In the first embodiment, the multiple terminal groups of the semiconductor chip 300 include one or more specific terminal groups. In the specific terminal group, one terminal is a first terminal, a terminal adjacent to the first terminal on the right side is a second terminal, and a terminal adjacent to the second terminal on the right side is a third terminal. The interval between the first terminal and the second terminal in the row direction is made wider than the interval between the second terminal and the third terminal in the row direction. Specifically, the interval between the terminals in the center of the specific terminal group in the row direction is made wider than the interval between the terminals in the end of the specific terminal group in the row direction. This can improve the fluidity of the resin when it flows from the center of the semiconductor chip 300 to the column direction (direction perpendicular to the row direction). In addition, the thickness of the resin can be easily made uniform within the plane of the semiconductor chip 300 on which multiple terminals are provided, and the terminals of the semiconductor chip 300 can be well connected to the electrodes of the semiconductor substrate 100. The distance between the terminals in the center of the specific terminal group is preferably, for example, 50 μm to 200 μm.

[0035] 4(a), 4(c), and 4(d) are plan views of the semiconductor chip 300 according to the first embodiment. FIG. 4(b) shows the semiconductor chip 30 of FIG. 4(a) and the semiconductor substrate 100. 1 is a cross-sectional view of a semiconductor device 800 in which output terminals 451 and 452 are connected to each other, as viewed from the output terminal 451 side.

[0036] In FIG. 4(a), the spacing between output terminals 451 in the center of the output terminal group in the row direction (left-right direction in the figure) is wider than the spacing between output terminals 451 at the ends of the output terminal group in the row direction. The spacing between output terminals 451 in the center of the output terminal group is equal, and the spacing between output terminals 451 at the ends of the output terminal group is also equal. In FIG. 4(c), the spacing between input terminals 452 in the center of the input terminal group in the row direction is wider than the spacing between input terminals 452 at the ends of the input terminal group in the row direction. The spacing between input terminals 452 in the center of the input terminal group is equal, and the spacing between input terminals 452 at the ends of the input terminal group is also equal.

[0037] In FIG. 4(d), the interval between the output terminals 451 in the center of the output terminal group is wider than the interval between the output terminals 451 at the end of the output terminal group. The interval between the output terminals 451 in the center of the output terminal group is equal, and the interval between the output terminals 451 at the end of the output terminal group is also equal. Furthermore, in FIG. 4(d), the interval between the input terminals 452 in the center of the input terminal group is wider than the interval between the input terminals 452 at the end of the input terminal group. The interval between the input terminals 452 in the center of the input terminal group is equal, and the interval between the input terminals 452 at the end of the input terminal group is also equal. By devising both the interval between the output terminals 451 in the output terminal group and the interval between the input terminals 452 in the input terminal group, a higher effect of improving fluidity can be expected than in FIGS. 4(a) and 4(c). The interval between the output terminals 451 in the center of the output terminal group may be equal to or different from the interval between the input terminals 452 in the center of the input terminal group. The spacing between output terminals 451 at the ends of the output terminal group may be equal to or different from the spacing between input terminals 452 at the ends of the input terminal group.

[0038] (Embodiment 2) A second embodiment will be described. In the second embodiment, in a specific terminal group, one terminal is defined as a first terminal, a terminal adjacent to the first terminal on the right side is defined as a second terminal, and a terminal adjacent to the second terminal on the right side is defined as a third terminal. Furthermore, a terminal adjacent to the third terminal on the right side is defined as a fourth terminal. The interval between the first terminal and the second terminal in the row direction is wider than the interval between the second terminal and the third terminal in the row direction, and the interval between the second terminal and the third terminal in the row direction is wider than the interval between the third terminal and the fourth terminal in the row direction. For example, the interval between the terminals of the specific terminal group (the interval between two adjacent terminals in the row direction) is gradually widened toward the center of the specific terminal group in the row direction. This can improve the fluidity of the resin when it flows from the center of the semiconductor chip 300 in the column direction compared to the first embodiment. It is preferable that the interval between the terminals of the specific terminal group is gradually widened, for example, in the range of 1 μm to 200 μm, toward the center of the specific terminal group. In addition, the intervals between the terminals of the specific terminal group may or may not be gradually increased as the terminals approach the center of the specific terminal group throughout the entire specific terminal group. The intervals between the terminals of the specific terminal group may be gradually increased only in the central portion of the specific terminal group as the terminals approach the center of the specific terminal group.

[0039] 5(a), 5(c), and 5(d) are plan views of the semiconductor chip 300 according to the embodiment 2. Fig. 5(b) is a cross-sectional view of a semiconductor device 800 in which the semiconductor substrate 100 and the semiconductor chip 300 of Fig. 5(a) are connected to each other, as viewed from the output terminal 451 side.

[0040] In FIG. 5(a), the distance between output terminals 451 gradually increases toward the center of the output terminal group. Focus on the first output terminal 451-1, the second output terminal 451-2, the third output terminal 451-3, and the fourth output terminal 451-4. The second output terminal 451-2 is adjacent to the first output terminal 451-1 on the right side, the third output terminal 451-3 is adjacent to the second output terminal 451-2 on the right side, and the fourth output terminal 451-4 is adjacent to the third output terminal 451-3 on the right side. The first output terminal 451-1 and the second output terminal Distance d11 between output terminal 451-2 is wider than distance d12 between second output terminal 451-2 and third output terminal 451-3, and distance d2 is wider than distance d13 between third output terminal 451-3 and fourth output terminal 451-4.

[0041] In FIG. 5(c), the distance between the input terminals 452 gradually increases toward the center of the input terminal group. Focus on the first input terminal 452-1, the second input terminal 452-2, the third input terminal 452-3, and the fourth input terminal 452-4. The second input terminal 452-2 is adjacent to the first input terminal 452-1 on the right side, the third input terminal 452-3 is adjacent to the second input terminal 452-2 on the right side, and the fourth input terminal 452-4 is adjacent to the third input terminal 452-3 on the right side. The distance d21 between the first input terminal 452-1 and the second input terminal 452-2 is wider than the distance d22 between the second input terminal 452-2 and the third input terminal 452-3, and the distance d22 is wider than the distance d23 between the third input terminal 452-3 and the fourth input terminal 452-4.

[0042] In Fig. 5(d), the spacing between output terminals 451 gradually increases toward the center of the output terminal group. Furthermore, in Fig. 5(d), the spacing between input terminals 452 gradually increases toward the center of the input terminal group. By devising both the spacing between output terminals 451 in the output terminal group and the spacing between input terminals 452 in the input terminal group, a greater effect in improving fluidity can be expected than in Figs. 5(a) and 5(c).

[0043] (Embodiment 3) A third embodiment will be described. In the third embodiment, the multiple terminal groups of the semiconductor chip 300 include a first terminal group and a second terminal group. The distance between the center of the first terminal group in the row direction and the center of the second terminal group in the row direction is made narrower than the distance between the end of the first terminal group in the row direction and the end of the second terminal group in the row direction. This makes it possible to reduce the amount of resin trapped between the center of the first terminal group and the center of the second terminal group. In addition, the thickness of the resin can be easily made uniform within the surface of the semiconductor chip 300 provided with multiple terminals, and the terminals of the semiconductor chip 300 can be well connected to the electrodes of the semiconductor substrate 100.

[0044] 6(a), 6(b), and 6(c) are plan views of a semiconductor chip 300 according to the third embodiment.

[0045] In Fig. 6(a), the position of output terminal 451 in the column direction is different between the center and the end of the output terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group. In Fig. 6(b), the position of input terminal 452 in the column direction is different between the center and the end of the input terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.

[0046] 6(c), the position of the output terminal 451 in the column direction is different between the center and the end of the output terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group. Furthermore, in FIG. 6(c), the position of the input terminal 452 in the column direction is different between the center and the end of the input terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the end of the output terminal group and the end of the input terminal group.

[0047] (Embodiment 4) A fourth embodiment will be described. In the fourth embodiment, the intermediate portion is a portion between the center and end of the first terminal group (or the second terminal group) in the row direction. The distance between the center of the group and the center of the second terminal group in the row direction is made narrower than the distance between the middle of the first terminal group in the row direction and the middle of the second terminal group in the row direction. The distance between the middle of the first terminal group in the row direction and the middle of the second terminal group in the row direction is made narrower than the distance between the end of the first terminal group in the row direction and the end of the second terminal group in the row direction. For example, the distance between the first terminal group and the second terminal group is gradually narrowed as it approaches the center of the first terminal group (or the second terminal group) in the row direction. This also reduces the amount of resin trapped between the center of the first terminal group and the center of the second terminal group.

[0048] 7(a), 7(b), and 7(c) are plan views of a semiconductor chip 300 according to the fourth embodiment.

[0049] In Fig. 7(a), the position of output terminal 451 in the column direction is changed so that the distance between the output terminal group and the input terminal group becomes gradually narrower as it approaches the center of the output terminal group (or the input terminal group). In Fig. 7(b), the position of input terminal 452 in the column direction is changed so that the distance between the output terminal group and the input terminal group becomes gradually narrower as it approaches the center of the output terminal group (or the input terminal group).

[0050] In FIG. 7(c), the position of the output terminal 451 in the column direction is changed so that the interval between the output terminal group and the input terminal group becomes gradually narrower as it approaches the center of the output terminal group (or the input terminal group). Furthermore, in FIG. 7(c), the position of the input terminal 452 in the column direction is changed so that the interval between the output terminal group and the input terminal group becomes gradually narrower as it approaches the center of the output terminal group (or the input terminal group). In FIG. 7(a) to 7(c), the interval d31 between the center of the output terminal group in the row direction and the center of the input terminal group in the row direction is narrower than the interval d32 between the middle part of the output terminal group in the row direction and the middle part of the input terminal group in the row direction. The interval d32 is narrower than the interval d33 between the end of the output terminal group in the row direction and the end of the input terminal group in the row direction.

[0051] (Embodiment 5) Next, a fifth embodiment will be described. In the fifth embodiment, as in the third embodiment, the distance between the center of the first terminal group in the row direction and the center of the second terminal group in the row direction is made narrower than the distance between the end of the first terminal group in the row direction and the end of the second terminal group in the row direction.

[0052] 8(a), 8(b), and 8(c) are plan views of a semiconductor chip 300 according to the fifth embodiment.

[0053] In Fig. 8(a), the size of output terminal 451 in the column direction is larger at the center of the output terminal group than at the ends of the output terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the ends of the output terminal group and the input terminal group. In Fig. 8(b), the size of input terminal 452 in the column direction is larger at the center of the input terminal group than at the ends of the input terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the ends of the output terminal group and the input terminal group.

[0054] In Fig. 8(c), the size of output terminal 451 in the column direction is larger at the center of the output terminal group than at the ends of the output terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the ends of the output terminal group and the ends of the input terminal group. Furthermore, in Fig. 8(c), the size of input terminal 452 in the column direction is larger at the center of the input terminal group than at the ends of the input terminal group, so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the ends of the output terminal group and the ends of the input terminal group.

[0055] (Embodiment 6) A sixth embodiment will be described. In the sixth embodiment, similarly to the fourth embodiment, the distance between the first and second terminal groups is gradually narrowed toward the center of the first and second terminal groups in the row direction.

[0056] 9(a), 9(b), and 9(c) are plan views of a semiconductor chip 300 according to the sixth embodiment.

[0057] In Fig. 9(a), the size of output terminal 451 in the column direction changes so that the spacing between the output terminal group and the input terminal group becomes gradually narrower as it approaches the center of the output terminal group (or input terminal group). In Fig. 9(b), the size of input terminal 452 in the column direction changes so that the spacing between the output terminal group and the input terminal group becomes gradually narrower as it approaches the center of the output terminal group (or input terminal group).

[0058] 9(c), the size of the output terminal 451 in the column direction changes so that the spacing between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group). Furthermore, in FIG. 9(c), the size of the input terminal 452 in the column direction changes so that the spacing between the output terminal group and the input terminal group gradually narrows as it approaches the center of the output terminal group (or the input terminal group).

[0059] In the third to sixth embodiments, one of the output terminal group and the input terminal group is defined as the first terminal group, and the other of the output terminal group and the input terminal group is defined as the second terminal group, and the interval between the output terminal group and the input terminal group is devised, but this is not limited to the above. For example, both the first terminal group and the second terminal group may be output terminal groups, and the interval between the two output terminal groups may be devised.

[0060] (Embodiment 7) The seventh embodiment will be described. The seventh embodiment is a combination of the first embodiment and the third embodiment. Note that the first embodiment and the fourth embodiment may be combined, the first embodiment and the fifth embodiment may be combined, or the first embodiment and the sixth embodiment may be combined. The second embodiment and the third embodiment may be combined, the second embodiment and the fourth embodiment may be combined, the second embodiment and the fifth embodiment may be combined, or the second embodiment and the sixth embodiment may be combined.

[0061] 10(a), 10(b), and 10(c) are plan views of a semiconductor chip 300 according to the seventh embodiment.

[0062] 10(a), similar to Fig. 4(a), the distance between the output terminals 451 in the center of the output terminal group is wider than the distance between the output terminals 451 at the ends of the output terminal group. Furthermore, similar to Fig. 6(a), the positions of the output terminals 451 in the column direction are different between the center and the ends of the output terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the ends of the output terminal group and the ends of the input terminal group.

[0063] 10(b), similar to Fig. 4(c), the distance between the input terminals 452 in the center of the input terminal group is wider than the distance between the input terminals 452 at the ends of the input terminal group. Furthermore, similar to Fig. 6(b), the positions of the input terminals 452 in the column direction are different between the center and the ends of the input terminal group so that the distance between the center of the output terminal group and the center of the input terminal group is narrower than the distance between the ends of the output terminal group and the ends of the input terminal group.

[0064] In FIG. 10(c), similarly to FIG. 4(d), both the interval between the output terminals 451 in the output terminal group and the interval between the input terminals 452 in the input terminal group are devised. 6(c), both the position of the output terminal 451 and the position of the input terminal 452 are devised in a manner similar to that of FIG. 6(c).

[0065] In the first to seventh embodiments, the terminal groups are arranged in the column direction, each including a plurality of terminals at different positions in the row direction. However, the arrangement direction is not limited to the row direction and the column direction. For example, the terminal group may include a plurality of terminals arranged in the column direction, and the plurality of terminal groups may be arranged in the row direction. Two other directions that intersect with each other may be used, and at least one of the row direction and the column direction may be an oblique direction.

[0066] (Embodiment 8) In the eighth embodiment, examples will be described in which the semiconductor device 800 according to the first to seventh embodiments is applied to various devices. When the semiconductor device 800 is used in a display device, the semiconductor substrate 100 is a display element substrate, and light emitting elements are arranged in the effective element area AA. When the semiconductor device 800 is used in an imaging device, the semiconductor substrate 100 is an imaging element substrate, and an imaging element is arranged in the effective element area AA.

[0067] 11 is a schematic diagram showing a display device 1000 as an example of the display device according to embodiment 8. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009.

[0068] The display panel 1005 is a display unit having the semiconductor device 800 according to the first to seventh embodiments, and performs display using light emitted from the semiconductor device 800. Flexible printed circuits FPC1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A control circuit including a transistor is printed on the circuit board 1007, and performs various controls such as control of the display panel 1005. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device. The display device 1000 may have three types of color filters corresponding to red, green, and blue, respectively. The multiple color filters may be arranged in a delta arrangement.

[0069] The display device 1000 may be used as a display unit of a mobile terminal. In this case, the display device 1000 may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, a head-mounted display, and the like.

[0070] The display device 1000 may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element (such as an image captured by the imaging element). The display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed within a viewfinder. The imaging device may be a digital camera, a digital video camera, or the like.

[0071] FIG. 12(a) is a schematic diagram showing an imaging device 1100 which is an example of an imaging device according to the eighth embodiment. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to the eighth embodiment (a display device having the semiconductor device 800 according to the first to seventh embodiments and performing display using light emitted from the semiconductor device 800). In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may be the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like. The rear display 1102 may also have the display device according to the eighth embodiment.

[0072] The best time to capture an image is very short, so it is better to display the information as soon as possible. Therefore, it is preferable to use a display device using an organic light-emitting element having a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device in a device that requires a high display speed.

[0073] The imaging device 1100 has an optical section (not shown). The optical section has a plurality of lenses, and forms an image of light on an imaging element housed in a housing 1104. The plurality of lenses can adjust their focus by adjusting their relative positions. This operation can also be performed automatically. The imaging device 1100 may be called a photoelectric conversion device. The photoelectric conversion device can include an imaging method that does not capture images sequentially, but detects a difference from a previous image, cuts out a part of a recorded image, and the like.

[0074] FIG. 12(b) is a schematic diagram showing an electronic device 1200 which is an example of the electronic device according to the eighth embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The display unit 1201 has the semiconductor device 800 according to the first to seventh embodiments, and displays using light emitted from the semiconductor device 800. The electronic device 1200 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit for communicating with the outside, in the housing 1203. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint and releases a lock. An electronic device having a communication unit may be called a communication device. The electronic device may further have a camera function by being provided with a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook computer.

[0075] FIG. 13(a) is a schematic diagram showing a display device 1300 which is an example of the display device according to the eighth embodiment. The display device 1300 is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301, a display unit 1302, and a base 1303 which supports the frame 1301 and the display unit 1302. The display unit 1302 has the semiconductor device 800 according to any one of the first to seventh embodiments, and performs display using light emitted from the semiconductor device 800. The form of the base 1303 is not limited to that shown in FIG. 13(a). The lower side of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0076] FIG. 13(b) is a schematic diagram showing a display device 1310 which is an example of another display device according to the eighth embodiment. The display device 1310 is a so-called foldable display device which is configured to be bendable. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. Each of the first display unit 1311 and the second display unit 1312 has the semiconductor device 800 according to the first to seventh embodiments, and performs display using light emitted from the semiconductor device 800. The first display unit 1311 and the second display unit 1312 may be a single display device without a joint. The first display unit 1311 and the second display unit 1312 can be divided at the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit 1311 and the second display unit 1312 may display a single image.

[0077] FIG. 14(a) is a schematic diagram showing an illumination device 1400 which is an example of an illumination device according to the eighth embodiment. The illumination device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. The light source 1402 has the semiconductor device 800 according to the first to seventh embodiments. The optical film 1404 may be a filter (optical filter) which improves the color rendering of the light source 1402. The light diffusion section 1405 can effectively diffuse the light of the light source 1402 for lighting up, etc., and deliver the light to a wide range. The optical film 1404 and the light diffusion section 1405 may be provided on the light emission side of the illumination device 1400. If necessary, a cover may be provided on the outermost part.

[0078] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white light, neutral white light, or other colors (any color from blue to red). White light is a color with a color temperature of 4200K, and neutral white is a color with a color temperature of 5000K. The lighting device 1400 may have a dimming circuit that adjusts the color of the light emitted by the lighting device 1400. The lighting device 1400 may have a power supply circuit connected to the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat dissipation unit. The heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.

[0079] 14(b) is a schematic diagram showing an automobile 1500, which is an example of a moving body according to the embodiment 8. The automobile 1500 may have a tail lamp 1501, which is an example of a lamp. The tail lamp 1501 is turned on in response to a brake operation or the like.

[0080] The tail lamp 1501 has the semiconductor device 800 according to any one of the first to seventh embodiments. The tail lamp 1501 may have a protective member for protecting the semiconductor device 800. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0081] The automobile 1500 may have a body 1503 and a window 1502 attached to the body 1503. The window 1502 may be a transparent display as long as it is not a window for checking the front and rear of the automobile 1500. The transparent display may have the semiconductor device 800 according to any one of the first to seventh embodiments. In this case, the constituent materials of the electrodes and the like of the semiconductor device 800 are made of transparent members.

[0082] The moving object according to the eighth embodiment may be a ship, an aircraft, a drone, or the like. The moving object may have a body and a lamp provided on the body. The lamp may emit light to notify the position of the body. The lamp has the semiconductor device 800 according to the first to seventh embodiments.

[0083] The display device according to the eighth embodiment (a display device having the semiconductor device 800 according to any one of the first to seventh embodiments and performing display using light emitted from the semiconductor device 800) can also be applied to wearable devices such as smart glasses, HMDs, and smart contacts. The display device according to the eighth embodiment can also be applied to a system having a wearable device or the like. An imaging and display device used as a wearable device or the like has an imaging device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.

[0084] 15(a) is a schematic diagram showing glasses 1600 (smart glasses) as an example of a wearable device according to embodiment 8. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a display device according to embodiment 8 (a display device having the semiconductor device 800 according to any one of embodiments 1 to 7 and performing display using light emitted from the semiconductor device 800) is provided on the back side of the lens 1601.

[0085] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the image capture device 1602.

[0086] FIG. 15(b) shows a pair of glasses 1610 ( 16 is a schematic diagram showing a pair of glasses 1610 (smart glasses). The glasses 1610 have a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a display device according to the eighth embodiment. The lens 1611 is formed with an imaging device in the control device 1612 and an optical system for projecting light emitted from the display device, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and the display device, and controls the operations of the imaging device and the display device.

[0087] The control device may have a gaze detection unit that detects the gaze of a wearer of the glasses 1610. Infrared rays may be used to detect the gaze. The infrared light emitting unit emits infrared light toward the eyeball of the user gazing at the display image. The image capturing unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction unit that reduces the light from the infrared light emitting unit to the display unit in a planar view, deterioration of the quality of the image projected from the display device to the lens 1611 is reduced. The control device detects the user's gaze toward the display image from the image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image due to reflection of irradiated light on the cornea can be used. More specifically, a gaze detection process based on a pupil-corneal reflex method is performed. Using the pupil-corneal reflex method, a gaze vector representing the direction (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0088] In addition, when display control is performed based on visual recognition detection (gaze detection), the semiconductor device 800 according to the first to seventh embodiments can be preferably applied to smart glasses having an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0089] The display device according to the eighth embodiment (the display device having the semiconductor device 800 according to the first to seventh embodiments and performing display using light emitted from the semiconductor device 800) may have an imaging device having a light receiving element, and may control a display image based on the user's line of sight information from the imaging device. Specifically, a first field of view area to which the user is gazing and a second field of view area other than the first field of view area are determined based on the line of sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0090] The display area may have a first display area and a second display area different from the first display area, and a high priority area may be determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device. The resolution of the high priority area may be controlled to be higher than the resolution of areas other than the high priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0091] AI may be used to determine the first field of view area, high priority area, etc. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using the image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0092] As described above, by using the semiconductor device 800 according to any one of the first to seventh embodiments, various devices can provide stable display with good image quality for a long period of time.

[0093] Each functional unit (configuration) of the various devices described in the eighth embodiment may or may not be individual hardware. The functions of two or more functional units may be realized by common hardware. Each of the multiple functions of one functional unit may be realized by individual hardware. Two or more functions of one functional unit may be realized by common hardware. Furthermore, each functional unit may or may not be realized by hardware such as ASIC, FPGA, DSP, etc. For example, the device may have a processor and a memory (storage medium) in which a control program is stored. Then, the functions of at least some of the functional units of the device may be realized by the processor reading and executing the control program from the memory.

[0094] The disclosure of this embodiment includes the following configuration. (Configuration 1) A semiconductor chip in which a terminal group including a plurality of terminals arranged along a first direction is arranged along a second direction intersecting the first direction. having at least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, a third terminal adjacent to the second terminal on an opposite side to the first terminal in the first direction, and a fourth terminal adjacent to the third terminal on an opposite side to the second terminal in the first direction; a distance between the first terminal and the second terminal in the first direction is greater than a distance between the second terminal and the third terminal in the first direction; The distance between the second terminal and the third terminal in the first direction is greater than the distance between the third terminal and the fourth terminal in the first direction. A semiconductor device comprising: (Configuration 2) A semiconductor chip in which a terminal group including a plurality of terminals arranged along a first direction is arranged along a second direction intersecting the first direction. having the plurality of terminal groups include a first terminal group and a second terminal group, a distance between a center portion of the first terminal group in the first direction and a center portion of the second terminal group in the first direction is narrower than a distance between an intermediate portion disposed between the center portion and an end portion of the first terminal group in the first direction and an intermediate portion disposed between the center portion and an end portion of the second terminal group in the first direction; A distance between the intermediate portion of the first terminal group in the first direction and the intermediate portion of the second terminal group in the first direction is narrower than a distance between the end portion of the first terminal group in the first direction and the end portion of the second terminal group in the first direction. A semiconductor device comprising: (Configuration 3) The positions of the terminals in the second direction are different between the central portion of the first terminal group and the end portion of the first terminal group. 3. The semiconductor device according to configuration 2. (Configuration 4) The positions of the terminals in the second direction are different between the central portion of the second terminal group and the end portion of the second terminal group. 4. The semiconductor device according to configuration 3. (Configuration 5) The size of the terminals in the central portion of the first terminal group in the second direction is larger than that of the terminals in the end portion of the first terminal group. 3. The semiconductor device according to configuration 2. (Configuration 6) The central terminal of the second terminal group has a size in the second direction larger than the end terminal of the second terminal group. 6. The semiconductor device according to configuration 5. (Configuration 7) The distance between the first terminal group and the second terminal group becomes gradually narrower toward the center of the first terminal group in the first direction. 7. The semiconductor device according to any one of configurations 2 to 6, (Configuration 8) one of the first terminal group and the second terminal group is an input terminal group; The other of the first terminal group and the second terminal group is an output terminal group. 8. The semiconductor device according to any one of configurations 2 to 7. (Configuration 9) At least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, and a third terminal adjacent to the second terminal on an opposite side to the first terminal in the first direction, A distance between the first terminal and the second terminal in the first direction is greater than a distance between the second terminal and the third terminal in the first direction. 9. The semiconductor device according to any one of configurations 2 to 8, (Configuration 10) In at least one of the plurality of terminal groups, the distance between two adjacent terminals in the first direction gradually increases toward the center of the terminal group in the first direction. 10. The semiconductor device according to configuration 1 or 9. (Configuration 11) The first direction is a row direction and the second direction is a column direction. 11. The semiconductor device according to any one of configurations 1 to 10. (Configuration 12) The semiconductor chip further includes a semiconductor substrate having a plurality of electrodes connected to the plurality of terminals of the semiconductor chip via connecting members. 12. The semiconductor device according to any one of configurations 1 to 11. (Configuration 13) A plurality of terminals of the semiconductor chip and a plurality of electrodes of the semiconductor substrate are connected to each other by thermocompression bonding or ultrasonic bonding using epoxy resin, acrylic resin, or anisotropic conductive resin as the connecting member. 13. The semiconductor device according to configuration 12. (Configuration 14) A display unit having the semiconductor device according to any one of configurations 1 to 13; A control circuit for controlling the display unit; A display device comprising: (Configuration 15) An optical section; an image sensor that receives light that has passed through the optical unit; a display unit that displays an image captured by the imaging element; having The display unit has the semiconductor device according to any one of the first to third aspects. A photoelectric conversion device comprising: (Configuration 16) A display unit having the semiconductor device according to any one of configurations 1 to 13; A housing provided with the display unit; A communication unit provided in the housing for communicating with an external device; 1. An electronic device comprising: [Explanation of symbols]

[0095] 800: Semiconductor device 300: Semiconductor chip 100: Semiconductor substrate 451,452:Terminal 32,33:Electrode

Claims

1. A semiconductor chip in which a terminal group including a plurality of terminals arranged along a first direction is arranged along a second direction intersecting the first direction. having at least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, a third terminal adjacent to the second terminal on an opposite side to the first terminal in the first direction, and a fourth terminal adjacent to the third terminal on an opposite side to the second terminal in the first direction, a distance between the first terminal and the second terminal in the first direction is greater than a distance between the second terminal and the third terminal in the first direction; The distance between the second terminal and the third terminal in the first direction is greater than the distance between the third terminal and the fourth terminal in the first direction. A semiconductor device comprising:

2. A semiconductor chip in which a terminal group including a plurality of terminals arranged along a first direction is arranged along a second direction intersecting the first direction. having the plurality of terminal groups include a first terminal group and a second terminal group, a distance between a center portion of the first terminal group in the first direction and a center portion of the second terminal group in the first direction is narrower than a distance between an intermediate portion disposed between the center portion and an end portion of the first terminal group in the first direction and an intermediate portion disposed between the center portion and an end portion of the second terminal group in the first direction; A distance between the intermediate portion of the first terminal group in the first direction and the intermediate portion of the second terminal group in the first direction is narrower than a distance between the end portion of the first terminal group in the first direction and the end portion of the second terminal group in the first direction. A semiconductor device comprising:

3. The positions of the terminals in the second direction are different between the central portion of the first terminal group and the end portion of the first terminal group.

3. The semiconductor device according to claim 2.

4. The positions of the terminals in the second direction are different between the central portion of the second terminal group and the end portion of the second terminal group.

4. The semiconductor device according to claim 3.

5. The size of the terminals in the central portion of the first terminal group in the second direction is larger than that of the terminals in the end portion of the first terminal group.

3. The semiconductor device according to claim 2.

6. The central terminal of the second terminal group has a size in the second direction larger than the end terminal of the second terminal group.

6. The semiconductor device according to claim 5,

7. The distance between the first terminal group and the second terminal group becomes gradually narrower toward the center of the first terminal group in the first direction.

3. The semiconductor device according to claim 2.

8. one of the first terminal group and the second terminal group is an input terminal group; The other of the first terminal group and the second terminal group is an output terminal group.

3. The semiconductor device according to claim 2.

9. At least one of the plurality of terminal groups includes a first terminal, a second terminal adjacent to the first terminal in the first direction, and a third terminal adjacent to the second terminal on an opposite side to the first terminal in the first direction, A distance between the first terminal and the second terminal in the first direction is greater than a distance between the second terminal and the third terminal in the first direction.

3. The semiconductor device according to claim 2.

10. In at least one of the plurality of terminal groups, the distance between two adjacent terminals in the first direction gradually increases toward the center of the terminal group in the first direction.

2. The semiconductor device according to claim 1,

11. The first direction is a row direction and the second direction is a column direction.

2. The semiconductor device according to claim 1,

12. The semiconductor chip further includes a semiconductor substrate having a plurality of electrodes connected to the plurality of terminals of the semiconductor chip via connecting members.

2. The semiconductor device according to claim 1,

13. A plurality of terminals of the semiconductor chip and a plurality of electrodes of the semiconductor substrate are connected to each other by thermocompression bonding or ultrasonic bonding using epoxy resin, acrylic resin, or anisotropic conductive resin as the connecting member.

13. The semiconductor device according to claim 12.

14. A display portion having the semiconductor device according to any one of claims 1 to 13; A control circuit for controlling the display unit; A display device comprising:

15. An optical section; an imaging element that receives light that has passed through the optical unit; a display unit that displays an image captured by the imaging element; having The display unit includes the semiconductor device according to any one of claims 1 to 13. A photoelectric conversion device comprising:

16. A display portion having the semiconductor device according to any one of claims 1 to 13; A housing provided with the display unit; A communication unit provided in the housing for communicating with an external device; 1. An electronic device comprising:

Images