Semiconductor device

Abstract

To provide a semiconductor device whose characteristics can be improved.SOLUTION: In an embodiment, a semiconductor device includes first to third electrodes, first to fourth semiconductor members, and a first insulating member. The first semiconductor member is provided between the first electrode and the second electrode and has a first conductivity type. The first semiconductor member includes a fifth partial region. The second semiconductor member has a second conductivity type. The second semiconductor member includes a first semiconductor region and a second semiconductor region. The fifth partial region is present between the first semiconductor region and the second semiconductor region in a third direction. The third semiconductor member has the second conductivity type, and the fourth semiconductor member has the first conductivity type.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] For example, in semiconductor devices including Schottky barrier diodes, improvements in characteristics are desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-45865 A Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiment provides a semiconductor device capable of improving characteristics. [Means for solving the problem]

[0005] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a third semiconductor member, a fourth semiconductor member, and a first insulating member. The first semiconductor member is provided between the first electrode and the second electrode and is of a first conductivity type. The first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second partial region and the third partial region are between a part of the first partial region and the second electrode in a first direction from the first electrode to the second electrode. A second direction from the second partial region to the third partial region intersects with the first direction. The fourth partial region is between a part of the third partial region and the second electrode in the first direction. The fourth partial region is in Schottky contact with the second electrode. The fifth partial region extends along the second direction. The fifth partial region is connected to the second partial region and the third partial region. The second semiconductor member is of a second conductivity type. The second semiconductor member includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region. The first semiconductor region and the second semiconductor region are between another part of the first partial region and the second electrode in the first direction. The first semiconductor region and the second semiconductor region are between the second partial region and the third partial region in the second direction. A third direction from the first semiconductor region to the second semiconductor region intersects with a plane including the first direction and the second direction. The fifth partial region is between the first semiconductor region and the second semiconductor region in the third direction. The third semiconductor region is between the first semiconductor region and the second electrode in the first direction. The fourth semiconductor region is between the second semiconductor region and the second electrode in the first direction. The fifth semiconductor region is between the fifth partial region and the second electrode in the first direction. The third semiconductor member is of the second conductivity type. A part of the third semiconductor member is between the third semiconductor region and the second electrode and is electrically connected to the second electrode. A third impurity concentration of the second conductivity type in the third semiconductor member is higher than a second impurity concentration of the second conductivity type in the second semiconductor member. The fourth semiconductor member is of the first conductivity type.A portion of the fourth semiconductor member is between the third semiconductor region and the second electrode and is electrically connected to the second electrode. A fourth impurity concentration of the first conductivity type in the fourth semiconductor member is higher than a first impurity concentration of the first conductivity type in the first semiconductor member. A direction from the second partial region to at least a portion of the third electrode is along the first direction. The first insulating member includes a first insulating region. The first insulating region is provided between the second partial region and the at least a portion of the third electrode. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic separated cross-sectional view illustrating the semiconductor device according to the first embodiment. [Diagram 2] FIG. 2 is a schematic perspective view illustrating the semiconductor device according to the first embodiment. [Diagram 3] 3(a) to 3(d) are schematic cross-sectional views illustrating the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a schematic plan view illustrating the semiconductor device according to the first embodiment. [Diagram 5] 5(a) to 5(d) are schematic cross-sectional views illustrating the semiconductor device according to the second embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating the semiconductor device according to the third embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating the semiconductor device according to the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a schematic separated cross-sectional view illustrating the semiconductor device according to the first embodiment. FIG. 2 is a schematic perspective view illustrating the semiconductor device according to the first embodiment. 3(a) to 3(d) are schematic cross-sectional views illustrating the semiconductor device according to the first embodiment. 1 and 2, a semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor member 11, a second semiconductor member 12, a third semiconductor member 13, a fourth semiconductor member 14, and a first insulating member 41. The third electrode 53 and the first insulating member 41 are omitted in Fig. 1. In Fig. 1, elements included in the semiconductor device 110 are shown separated from each other.

[0009] A first direction D1 from the first electrode 51 to the second electrode 52 is defined as a Z-axis direction. A direction perpendicular to the Z-axis direction is defined as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as a Y-axis direction.

[0010] The first semiconductor member 11 is provided between a first electrode 51 and a second electrode 52. The first semiconductor member 11 is of a first conductivity type.

[0011] The first semiconductor member 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, a fourth partial region 11d, and a fifth partial region 11e. The second partial region 11b and the third partial region 11c are located between a part of the first partial region 11a and the second electrode 52 in a first direction D1 from the first electrode 51 to the second electrode 52. A second direction D2 from the second partial region 11b to the third partial region 11c intersects with the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0012] The fourth partial region 11d is located between a part of the third partial region 11c and the second electrode 52 in the first direction D1. The fourth partial region 11d is in Schottky contact with the second electrode 52.

[0013] The fifth partial region 11e extends along the second direction D2. The fifth partial region 11e is connected to the second partial region 11b and the third partial region 11c. At least a portion of the fifth partial region 11e is located between the second partial region 11b and the third partial region 11c in the second direction D2.

[0014] The boundaries between the first partial region 11a, the second partial region 11b, the third partial region 11c, the fourth partial region 11d, and the fifth partial region 11e may be clear or unclear.

[0015] The second semiconductor member 12 is of a second conductivity type. The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. In the following, the first conductivity type is n-type and the second conductivity type is p-type.

[0016] The second semiconductor member 12 includes a first semiconductor region 12a, a second semiconductor region 12b, a third semiconductor region 12c, a fourth semiconductor region 12d, and a fifth semiconductor region 12e. The first semiconductor region 12a and the second semiconductor region 12b are located between another part of the first partial region 11a and the second electrode 52 in the first direction D1. The first semiconductor region 12a and the second semiconductor region 12b are located between the second partial region 11b and the third partial region 11c in the second direction D2. A third direction D3 from the first semiconductor region 12a to the second semiconductor region 12b intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0017] The fifth partial region 11e is located between the first semiconductor region 12a and the second semiconductor region 12b in the third direction D3. The first semiconductor region 12a and the second semiconductor region 12b are separated by the fifth partial region 11e.

[0018] The boundaries between the first semiconductor region 12a, the second semiconductor region 12b, the third semiconductor region 12c, the fourth semiconductor region 12d, and the fifth semiconductor region 12e may be clear or unclear.

[0019] The third semiconductor region 12c is between the first semiconductor region 12a and the second electrode 52 in the first direction D1. The fourth semiconductor region 12d is between the second semiconductor region 12b and the second electrode 52 in the first direction D1. The fifth semiconductor region 12e is between the fifth partial region 11e and the second electrode 52 in the first direction D1.

[0020] The third semiconductor member 13 is of the second conductivity type. A portion 13a of the third semiconductor member 13 is between the third semiconductor region 12c and the second electrode 52. The portion 13a of the third semiconductor member 13 is electrically connected to the second electrode 52. A third impurity concentration of the second conductivity type in the third semiconductor member 13 is higher than a second impurity concentration of the second conductivity type in the second semiconductor member 12. For example, the second semiconductor member 12 is a p region. The third semiconductor member 13 is, for example, a p + It is an area.

[0021] The fourth semiconductor member 14 is of the first conductivity type. A portion of the fourth semiconductor member 14 is between the third semiconductor region 12c and the second electrode 52. A portion of the fourth semiconductor member 14 is electrically connected to the second electrode 52. A fourth impurity concentration of the first conductivity type in the fourth semiconductor member 14 is higher than a first impurity concentration of the first conductivity type in the first semiconductor member 11. For example, the first semiconductor member 11 is an n region. The fourth semiconductor member 14 is an n + It is an area.

[0022] The direction from the second partial region 11b to at least a part of the third electrode 53 is along the first direction D1. The first insulating member 41 includes a first insulating region 41a. The first insulating region 41a is provided between the second partial region 11b and at least a part of the third electrode 53. The first insulating member 41 electrically insulates the second partial region 11b and the third electrode 53. A part of the first insulating member 41 is provided between the fourth semiconductor member 14 and the third electrode 53. The first insulating member 41 electrically insulates the fourth semiconductor member 14 and the third electrode 53.

[0023] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0024] The second partial region 11b corresponds to, for example, a JFET (Junction Field Effect Transistor) region. The third partial region 11c functions, for example, as a layer that spreads current. The fourth partial region 11d functions as a part of a Schottky barrier diode (SBD). The region including the fourth semiconductor member 14 functions as a pn body diode.

[0025] In the semiconductor device 110, by providing the SBD including the fourth partial region 11d, a current flows through the SBD when a reverse voltage is applied, for example, so that the pn body diode is less likely to be turned on.

[0026] In the semiconductor device 110, a fifth partial region 11e is provided. As shown in FIG. 1, when a reverse voltage is applied, a part of the current i1 flowing through the fourth partial region 11d can flow through the fifth partial region 11e to the second partial region 11b. This prevents the semiconductor device from being deteriorated due to hole injection when a reverse voltage is applied. According to the embodiment, the reverse conduction characteristics can be improved.

[0027] A reference example in which the fifth partial region 11e is not provided is conceivable. In the reference example, when a reverse voltage is applied, the current i1 flowing through the fourth partial region 11d has difficulty flowing toward the second partial region 11b. In the reference example, the reverse conduction characteristics are insufficient.

[0028] In contrast, in the embodiment, the fifth partial region 11e allows a part of the current i1 flowing through the fourth partial region 11d to flow through the fifth partial region 11e to the second partial region 11b. According to the embodiment, the reverse conduction characteristics can be improved. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0029] In the semiconductor device 110, the portion 13a of the third semiconductor member 13 may be in ohmic contact with the second electrode 52, for example.

[0030] 1, another portion 13b of the third semiconductor member 13 is between the fourth semiconductor region 12d and the second electrode 52. The other portion 13b of the third semiconductor member 13 may be in ohmic contact with the second electrode 52.

[0031] 1, the semiconductor device 110 may include a first conductive layer 31. The first conductive layer 31 includes, for example, a silicide. At least a portion of the first conductive layer 31 is provided between the third semiconductor member 13 and the second electrode 52. The first conductive layer 31 includes, for example, NiSi. For example, an electrical connection with low electrical resistance is obtained.

[0032] 1, the second electrode 52 may include a facing region 52p. The facing region 52p faces the fourth partial region 11d. The facing region 52p includes at least one selected from the group consisting of Ni, Ti, V, and Mo, for example. A Schottky junction is obtained in the portion including the facing region 52p. In the second electrode 52, the entire lower surface including the facing region 52p may include the above material.

[0033] As shown in FIG. 1, the semiconductor device 110 may further include a fifth semiconductor member 15 of the first conductivity type. A portion of the fifth semiconductor member 15 is between a portion 13a of the third semiconductor member 13 and the second electrode 52. A portion of the fifth semiconductor member 15 is electrically connected to the second electrode 52. A fifth impurity concentration of the first conductivity type in the fifth semiconductor member 15 is higher than a fourth impurity concentration. The fifth semiconductor member 15 may be, for example, n ++ At least a portion of the first conductive layer 31 (eg, a silicide layer) may be provided between the fifth semiconductor member 15 and the second electrode 52.

[0034] 1 and 2, the semiconductor device 110 may further include a sixth semiconductor member 16 of the first conductivity type. The sixth semiconductor member 16 is provided between the first electrode 51 and the first semiconductor member 11 in the first direction D1. The sixth impurity concentration of the first conductivity type in the sixth semiconductor member 16 is lower than the first impurity concentration. The sixth semiconductor member 16 may be, for example, n - The sixth semiconductor member 16 is, for example, a drift layer.

[0035] The semiconductor device 110 may further include a seventh semiconductor member 17 of the first conductivity type. The seventh semiconductor member 17 is provided between the first electrode 51 and the sixth semiconductor member 16 in the first direction D1. The seventh semiconductor member 17 has a seventh impurity concentration of the first conductivity type higher than the first impurity concentration. The seventh semiconductor member 17 may be, for example, an n + It is an area.

[0036] Fig. 3(a) is a cross-sectional view in the XY plane including the fourth semiconductor member 14. Fig. 3(b) is a cross-sectional view in the XY plane including the fifth semiconductor member 15. Fig. 3(c) is a cross-sectional view in the XY plane including the third semiconductor region 12c. Fig. 3(d) is a cross-sectional view in the XY plane including the fifth partial region 11e.

[0037] As shown in Figures 3(c) and 3(d), the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 is along the second direction D2 (see Figure 1). As shown in Figures 3(c) and 3(d), for example, the position of the fifth partial region 11e in the third direction D3 coincides with the position of the fourth partial region 11d in the third direction D3.

[0038] 1, the first semiconductor member 11 may further include a sixth partial region 11f, a seventh partial region 11g, and an eighth partial region 11h. The sixth partial region 11f is located between another part of the first partial region 11a and the second electrode 52 in the first direction D1. The second partial region 11b is located between the sixth partial region 11f and the third partial region 11c in the second direction D2. The sixth partial region 11f functions, for example, as a current spreading layer.

[0039] The seventh partial region 11g is located between a part of the sixth partial region 11f and the second electrode 52 in the first direction D1. The seventh partial region 11g is in Schottky contact with the second electrode 52.

[0040] The eighth partial region 11h extends along the second direction D2. The eighth partial region 11h is connected to the sixth partial region 11f and the second partial region 11b. The eighth partial region 11h is provided, for example, between the sixth partial region 11f and the second partial region 11b.

[0041] The second semiconductor member 12 further includes a sixth semiconductor region 12f, a seventh semiconductor region 12g, an eighth semiconductor region 12h, a ninth semiconductor region 12i, and a tenth semiconductor region 12j. The sixth semiconductor region 12f and the seventh semiconductor region 12g are located between another part of the first partial region 11a and the second electrode 52 in the first direction D1.

[0042] The sixth semiconductor region 12f and the seventh semiconductor region 12g are located between the sixth partial region 11f and the second partial region 11b in the second direction D2. The direction from the sixth semiconductor region 12f to the seventh semiconductor region 12g is along the third direction D3.

[0043] The eighth partial region 11h is located between the sixth semiconductor region 12f and the seventh semiconductor region 12g in the third direction D3.

[0044] The eighth semiconductor region 12h is between the sixth semiconductor region 12f and the second electrode 52 in the first direction D1. The ninth semiconductor region 12i is between the seventh semiconductor region 12g and the second electrode 52 in the first direction D1. The tenth semiconductor region 12j is between the eighth partial region 11h and the second electrode 52 in the first direction D1.

[0045] For example, the sixth semiconductor region 12f and the seventh semiconductor region 12g are separated by the eighth partial region 11h. When a reverse voltage is applied, a part of the current flowing through the seventh partial region 11g can flow through the eighth partial region 11h to the second partial region 11b. This prevents the semiconductor device from being deteriorated due to hole injection when a reverse voltage is applied. According to the embodiment, the reverse conduction characteristics can be improved.

[0046] As shown in FIG. 3(d), in the example of the semiconductor device 110, the direction from the eighth partial region 11h to the fifth partial region 11e is along the second direction D2.

[0047] In this example, the direction from the seventh partial region 11g to the fourth partial region 11d is along the second direction D2. The direction from the position of the seventh partial region 11g in the third direction D3 to the position of the eighth partial region 11h in the third direction D3 is along the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction.

[0048] 1, the portion 13c of the third semiconductor member 13 is located between the eighth semiconductor region 12h and the second electrode 52. The portion 13c of the third semiconductor member 13 is electrically connected to the second electrode 52. The portion 13d of the third semiconductor member 13 is located between the ninth semiconductor region 12i and the second electrode 52. The portion 13d of the third semiconductor member 13 is electrically connected to the second electrode 52.

[0049] FIG. 4 is a schematic plan view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 4, the semiconductor device 110 includes a first region r1 and a second region r2. The first region r1 is, for example, a region in which the fourth partial region 11d or the seventh partial region 11g is provided. The first region r1 is, for example, a region in which an SBD is provided. The second region r2 is, for example, a region in which the third semiconductor member 13 is provided. The second region r2 is, for example, a region in which an ohmic junction is provided. The second region r2 may include, for example, a region in which the fourth semiconductor member 14 is provided. The second region r2 may include, for example, a region in which the fifth semiconductor member 15 is provided.

[0050] In the semiconductor device 110, the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the first region r1 in the third direction D3 is along the second direction D2. The position of the fifth partial region 11e in the third direction D3 coincides with the position of the first region r1 in the third direction D3.

[0051] Second embodiment 5(a) to 5(d) are schematic cross-sectional views illustrating the semiconductor device according to the second embodiment. 5(c) and 5(d), in the semiconductor device 111 according to the embodiment, the relative positional relationship between the eighth partial region 11h and the fifth partial region 11e is different from the positional relationship in the semiconductor device 110. Except for this, the configuration of the semiconductor device 111 may be similar to the configuration of the semiconductor device 110.

[0052] In the semiconductor device 111, the direction from the eighth partial region 11h to the fifth partial region 11e intersects with the second direction D2. The eighth partial region 11h is provided at a position shifted with respect to the fifth partial region 11e.

[0053] The semiconductor device 111 can also improve the reverse conduction characteristics. The semiconductor device 111 has, for example, good structural symmetry. This makes it easier for current diffusion to the drift layer to be uniform. For example, the on-resistance during forward on-state is low. For example, the short-circuit resistance is good. For example, the resistance during reverse conduction is low.

[0054] Third embodiment FIG. 6 is a schematic cross-sectional view illustrating the semiconductor device according to the third embodiment. 6, in the semiconductor device 112 according to the embodiment, the position of the fifth partial region 11e is shifted with respect to the first region r1. Except for this, the configuration of the semiconductor device 112 may be similar to the configuration of the semiconductor device 110.

[0055] In the semiconductor device 112, a direction from a position of the fifth partial region 11e in the third direction D3 to a position of the fourth partial region 11d in the third direction D3 intersects with the second direction D2. For example, the position of the fifth partial region 11e in the third direction D3 is between the position of the part 13a of the third semiconductor member 13 in the third direction D3 and the position of the fourth partial region 11d in the third direction D3.

[0056] The reverse conduction characteristics can also be improved in the semiconductor device 112. In the semiconductor device 112, for example, a current (SBD current) passing through the fourth partial region 11d passes through multiple paths and flows to the second partial region 11b. For example, the effect of suppressing the pn diode operation is improved in the second partial region 11b.

[0057] In the semiconductor device 112, the direction from the eighth partial region 11h to the fifth partial region 11e is along the second direction D2. The direction from the position of the seventh partial region 11g in the third direction D3 to the position of the eighth partial region 11h in the third direction D3 intersects with the second direction D2. The direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 intersects with the second direction D2.

[0058] (Fourth embodiment) FIG. 7 is a schematic cross-sectional view illustrating the semiconductor device according to the fourth embodiment. 7, in the semiconductor device 113 according to the embodiment, the position of the eighth partial region 11h in the third direction D3 is shifted with respect to the position of the fifth partial region 11e in the third direction D3. Except for this, the configuration of the semiconductor device 113 may be similar to the configuration of the semiconductor device 110.

[0059] In the semiconductor device 113, the direction from the eighth partial region 11h to the fifth partial region 11e intersects with the second direction D2. The direction from a position in the seventh partial region 11g in the third direction D3 to a position in the eighth partial region 11h in the third direction D3 intersects with the second direction D2. The direction from a position in the fifth partial region 11e in the third direction D3 to a position in the fourth partial region 11d in the third direction D3 intersects with the second direction D2.

[0060] The reverse conduction characteristics can also be improved in the semiconductor device 113. In the semiconductor device 113, for example, when a large current rushes in during reverse conduction, the conductivity modulation of the pn diode is likely to occur. This suppresses the voltage drop of conduction and ensures surge current resistance. For example, if the operation of the pn diode is excessively suppressed by the SBD current, the surge resistance may deteriorate. In the semiconductor device 113, the SBD effect is appropriately adjusted and well-balanced overall characteristics are obtained.

[0061] In the embodiment, for example, the first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, and the fourth semiconductor member 14 contain SiC. The first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, and the fourth semiconductor member 14 may contain at least one selected from the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. These semiconductor regions contain crystals. These semiconductor members may contain silicon. These semiconductor members may contain a compound semiconductor containing Ga.

[0062] For example, the impurities of the first conductivity type include at least one selected from the group consisting of N, P, and As. For example, the impurities of the second conductivity type include at least one selected from the group consisting of B, Al, and Ga.

[0063] In one example, the concentration of the first conductivity type impurity in the first semiconductor member 11 is, for example, 1×10 16 cm -3 More than 1×10 18 cm -3In one example, the concentration of the second conductivity type impurity in the second semiconductor member 12 is, for example, 1×10 17 cm -3 More than 1×10 20 cm -3 In one example, the concentration of the second conductivity type impurity in the third semiconductor member 13 is, for example, 1×10 19 cm -3 More than 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fourth semiconductor member 14 is, for example, 1×10 19 cm -3 More than 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fifth semiconductor member 15 is, for example, 1×10 19 cm -3 More than 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the sixth semiconductor member 16 is, for example, 1×10 14 cm -3 More than 1×10 17 cm -3 In one example, the concentration of the first conductivity type impurity in the seventh semiconductor member 17 is, for example, 1×10 15 cm -3 More than 1×10 18 cm -3 The above impurity concentrations may correspond to, for example, carrier concentrations.

[0064] In an embodiment, information regarding the length and thickness is obtained by observation using an electron microscope, etc. Information regarding the composition of the material is obtained by secondary ion mass spectrometry (SIMS) or energy dispersive X-ray spectroscopy (EDX), etc.

[0065] The embodiments may include the following technical solutions. (Technical proposal 1) A first electrode; A second electrode; a first semiconductor member of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the second partial region and the third partial region being between a part of the first partial region and the second electrode in a first direction from the first electrode to the second electrode, a second direction from the second partial region to the third partial region intersecting the first direction, the fourth partial region being between a part of the third partial region and the second electrode in the first direction, the fourth partial region being in Schottky contact with the second electrode, the fifth partial region extending along the second direction, and the fifth partial region being connected to the second partial region and the third partial region; a second semiconductor member of a second conductivity type, the second semiconductor member including a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region, the first semiconductor region and the second semiconductor region being between another part of the first partial region and the second electrode in the first direction, the first semiconductor region and the second semiconductor region being between the second partial region and the third partial region in the second direction, a third direction from the first semiconductor region to the second semiconductor region intersects with a plane including the first direction and the second direction, the fifth partial region being between the first semiconductor region and the second semiconductor region in the third direction, the third semiconductor region being between the first semiconductor region and the second electrode in the first direction, the fourth semiconductor region being between the second semiconductor region and the second electrode in the first direction, and the fifth semiconductor region being between the fifth partial region and the second electrode in the first direction; a third semiconductor member of the second conductivity type, a portion of the third semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, and a third impurity concentration of the second conductivity type in the third semiconductor member being higher than a second impurity concentration of the second conductivity type in the second semiconductor member; a fourth semiconductor member of the first conductivity type, a portion of the fourth semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, and a fourth impurity concentration of the first conductivity type in the fourth semiconductor member being higher than a first impurity concentration of the first conductivity type in the first semiconductor member; a third electrode, the direction from the second partial region to at least a part of the third electrode being along the first direction; a first insulating member including a first insulating region, the first insulating member being provided between the second partial region and the at least a portion of the third electrode; A semiconductor device comprising:

[0066] (Technical proposal 2) A semiconductor device as described in Technical Proposal 1, wherein the portion of the third semiconductor member is in ohmic contact with the second electrode.

[0067] (Technical proposal 3) A semiconductor device as described in Technical Proposal 1 or 2, wherein another portion of the third semiconductor member is between the fourth semiconductor region and the second electrode and is in ohmic contact with the second electrode.

[0068] (Technical proposal 4) Further comprising a fifth semiconductor member of the first conductivity type; A semiconductor device according to any one of Technical Proposals 1 to 3, wherein a portion of the fifth semiconductor member is between the portion of the third semiconductor member and the second electrode and is electrically connected to the second electrode, and a fifth impurity concentration of the first conductivity type in the fifth semiconductor member is higher than the fourth impurity concentration.

[0069] (Technical proposal 5) The semiconductor device according to any one of Technical Solutions 1 to 4, wherein a direction from a position of the fifth partial region in the third direction to a position of the fourth partial region in the third direction is along the second direction.

[0070] (Technical proposal 6) The semiconductor device according to any one of Technical Solutions 1 to 4, wherein a position of the fifth partial region in the third direction coincides with a position of the fourth partial region in the third direction.

[0071] (Technical proposal 7) The semiconductor device according to any one of technical proposals 1 to 4, wherein a direction from a position in the fifth partial region in the third direction to a position in the fourth partial region in the third direction intersects with the second direction.

[0072] (Technical proposal 8) A semiconductor device described in any one of Technical Proposals 1 to 4, wherein the position of the fifth partial region in the third direction is between the position of the part of the third semiconductor member in the third direction and the position of the fourth partial region in the third direction.

[0073] (Technical proposal 9) The first semiconductor member further includes a sixth partial region, a seventh partial region, and an eighth partial region, the sixth partial region is located between another part of the first partial region and the second electrode in the first direction; the second partial region is between the sixth partial region and the third partial region in the second direction, the seventh partial region is between a part of the sixth partial region and the second electrode in the first direction, the seventh partial region is in Schottky contact with the second electrode, the eighth partial region extends along the second direction, the eighth partial region is connected to the sixth partial region and the second partial region, The second semiconductor member further includes a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a ninth semiconductor region, and a tenth semiconductor region, the sixth semiconductor region and the seventh semiconductor region are located between another part of the first portion region and the second electrode in the first direction; the sixth semiconductor region and the seventh semiconductor region are between the sixth partial region and the second partial region in the second direction, a direction from the sixth semiconductor region to the seventh semiconductor region is along the third direction, the eighth partial region is between the sixth semiconductor region and the seventh semiconductor region in the third direction, the eighth semiconductor region is between the sixth semiconductor region and the second electrode in the first direction, the ninth semiconductor region is between the seventh semiconductor region and the second electrode in the first direction, The semiconductor device according to any one of Technical Solutions 1 to 4, wherein the tenth semiconductor region is between the eighth partial region and the second electrode in the first direction.

[0074] (Technical proposal 10) A semiconductor device according to Technical Proposal 9, wherein a direction from the eighth partial region to the fifth partial region is along the second direction.

[0075] (Technical proposal 11) a direction from the seventh partial region to the fourth partial region is along the second direction; A semiconductor device as described in Technical Proposal 9, wherein a direction from a position of the seventh partial region in the third direction to a position of the eighth partial region in the third direction is along a direction from a position of the fifth partial region in the third direction to a position of the fourth partial region in the third direction.

[0076] (Technical proposal 12) The semiconductor device described in Technical Proposal 9, wherein a direction from the eighth partial region to the fifth partial region intersects with the second direction.

[0077] (Technical proposal 13) a direction from the eighth partial region to the fifth partial region is along the second direction; a direction from a position in the seventh partial region in the third direction to a position in the eighth partial region in the third direction intersects with the second direction, A semiconductor device as described in Technical Proposal 9, wherein a direction from a position in the fifth partial region in the third direction to a position in the fourth partial region in the third direction intersects with the second direction.

[0078] (Technical proposal 14) a direction from the eighth partial region to the fifth partial region intersects with the second direction, a direction from a position in the seventh partial region in the third direction to a position in the eighth partial region in the third direction intersects with the second direction, A semiconductor device as described in Technical Proposal 9, wherein a direction from a position in the fifth partial region in the third direction to a position in the fourth partial region in the third direction intersects with the second direction.

[0079] (Technical proposal 15) Further comprising a sixth semiconductor member of the first conductivity type; the sixth semiconductor member is provided between the first electrode and the first semiconductor member in the first direction, The semiconductor device according to any one of Technical Solutions 1 to 14, wherein a sixth impurity concentration of the first conductivity type in the sixth semiconductor member is lower than the first impurity concentration.

[0080] (Technical proposal 16) Further comprising a seventh semiconductor member of the first conductivity type; the seventh semiconductor member is provided between the first electrode and the sixth semiconductor member in the first direction, A semiconductor device according to Technical Proposal 15, wherein a seventh impurity concentration of the first conductivity type in the seventh semiconductor member is higher than the first impurity concentration.

[0081] (Technical proposal 17) a first conductive layer including a silicide; The semiconductor device according to any one of Technical Solutions 1 to 16, wherein at least a portion of the first conductive layer is provided between the third semiconductor member and the second electrode.

[0082] (Technical proposal 18) the second electrode includes an opposing region opposing the fourth partial region, The semiconductor device according to any one of Technical Solutions 1 to 17, wherein the facing region includes at least one selected from the group consisting of Ni, Ti, V, and Mo.

[0083] (Technical proposal 19) The semiconductor device according to any one of Technical Proposals 1 to 18, wherein the first semiconductor member, the second semiconductor member, the third semiconductor member, and the fourth semiconductor member contain SiC.

[0084] (Technical proposal 20) 20. The semiconductor device according to any one of Technical Solutions 1 to 19, wherein a portion of the first insulating member is provided between the fourth semiconductor member and the third electrode.

[0085] According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0086] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element, such as electrodes, semiconductor members, and insulating members, included in the semiconductor device are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from the known range.

[0087] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0088] In addition, all semiconductor devices that can be implemented by those skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention.

[0089] In addition, within the scope of the concept of the present invention, a person skilled in the art may think of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0090] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0091] 11 to 17: first to seventh semiconductor members, 11a to 11h: 1st to 8th partial areas, 12a to 12j: first to tenth semiconductor regions, 13a~13d: some, 31: first conductive layer, 41: first insulating member, 41a: first insulating region; 51~53: 1st~3rd electrode, 52p: Opposing area, 110 to 113: semiconductor device, D1~D3: 1st to 3rd directions, r1, r2: 1st, 2nd area

Claims

1. A first electrode; A second electrode; a first semiconductor member of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the second partial region and the third partial region being between a part of the first partial region and the second electrode in a first direction from the first electrode to the second electrode, a second direction from the second partial region to the third partial region intersecting the first direction, the fourth partial region being between a part of the third partial region and the second electrode in the first direction, the fourth partial region being in Schottky contact with the second electrode, the fifth partial region extending along the second direction, and the fifth partial region being connected to the second partial region and the third partial region; A second semiconductor member of a second conductivity type, the second semiconductor member including a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region, the first semiconductor region and the second semiconductor region being between another part of the first partial region and the second electrode in the first direction, the first semiconductor region and the second semiconductor region being between the second partial region and the third partial region in the second direction, a third direction from the first semiconductor region to the second semiconductor region intersects with a plane including the first direction and the second direction, the fifth partial region being between the first semiconductor region and the second semiconductor region in the third direction, the third semiconductor region being between the first semiconductor region and the second electrode in the first direction, the fourth semiconductor region being between the second semiconductor region and the second electrode in the first direction, and the fifth semiconductor region being between the fifth partial region and the second electrode in the first direction; A third semiconductor member of the second conductivity type, a portion of the third semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, and a third impurity concentration of the second conductivity type in the third semiconductor member being higher than a second impurity concentration of the second conductivity type in the second semiconductor member; A fourth semiconductor member of the first conductivity type, a portion of the fourth semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, and a fourth impurity concentration of the first conductivity type in the fourth semiconductor member being higher than a first impurity concentration of the first conductivity type in the first semiconductor member; a third electrode, the direction from the second partial region to at least a part of the third electrode being along the first direction; a first insulating member including a first insulating region, the first insulating region being provided between the second partial region and the at least a portion of the third electrode; A semiconductor device comprising:

2. Further comprising a fifth semiconductor member of the first conductivity type; 2. The semiconductor device according to claim 1, wherein a portion of the fifth semiconductor member is between the portion of the third semiconductor member and the second electrode and is electrically connected to the second electrode, and a fifth impurity concentration of the first conductivity type in the fifth semiconductor member is higher than the fourth impurity concentration.

3. The semiconductor device according to claim 1 , wherein a direction from a position of said fifth partial region in said third direction to a position of said fourth partial region in said third direction is along said second direction.

4. The semiconductor device according to claim 1 , wherein a direction from a position of said fifth partial region in said third direction to a position of said fourth partial region in said third direction intersects with said second direction.

5. The semiconductor device according to claim 1 , wherein the position of the fifth partial region in the third direction is between the position of the part of the third semiconductor member in the third direction and the position of the fourth partial region in the third direction.

6. The first semiconductor member further includes a sixth partial region, a seventh partial region, and an eighth partial region, the sixth partial region is located between another part of the first partial region and the second electrode in the first direction; the second partial region is between the sixth partial region and the third partial region in the second direction, the seventh partial region is located between a part of the sixth partial region and the second electrode in the first direction; the seventh partial region is in Schottky contact with the second electrode; the eighth partial region extends along the second direction, the eighth partial region is connected to the sixth partial region and the second partial region, The second semiconductor member further includes a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a ninth semiconductor region, and a tenth semiconductor region, the sixth semiconductor region and the seventh semiconductor region are located between another part of the first partial region and the second electrode in the first direction; the sixth semiconductor region and the seventh semiconductor region are located between the sixth partial region and the second partial region in the second direction, a direction from the sixth semiconductor region to the seventh semiconductor region is along the third direction, the eighth partial region is located between the sixth semiconductor region and the seventh semiconductor region in the third direction, the eighth semiconductor region is between the sixth semiconductor region and the second electrode in the first direction, the ninth semiconductor region is between the seventh semiconductor region and the second electrode in the first direction, The semiconductor device according to claim 1 , wherein the tenth semiconductor region is located between the eighth partial region and the second electrode in the first direction.

7. The semiconductor device according to claim 6 , wherein a direction from said eighth partial region to said fifth partial region is along said second direction.

8. The semiconductor device according to claim 6 , wherein a direction from said eighth partial region to said fifth partial region intersects with said second direction.

9. a direction from the eighth partial region to the fifth partial region is along the second direction; a direction from a position in the seventh partial region in the third direction to a position in the eighth partial region in the third direction intersects with the second direction, The semiconductor device according to claim 6 , wherein a direction from a position of said fifth partial region in said third direction to a position of said fourth partial region in said third direction intersects with said second direction.

10. a direction from the eighth partial region to the fifth partial region intersects with the second direction, a direction from a position in the seventh partial region in the third direction to a position in the eighth partial region in the third direction intersects with the second direction, The semiconductor device according to claim 6 , wherein a direction from a position of said fifth partial region in said third direction to a position of said fourth partial region in said third direction intersects with said second direction.

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