Reflectors, semiconductor processing systems having reflectors, and methods of depositing material layers in semiconductor processing systems using reflectors

Abstract

To provide reflectors, semiconductor processing systems having the reflectors, and methods of depositing material layers in the semiconductor processing systems using the reflectors.SOLUTION: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body, and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates generally to manufacturing semiconductor devices and, more particularly, to heating a substrate during deposition of a layer of material on the substrate used for manufacturing the semiconductor devices. [Background technology]

[0002] Semiconductor devices, such as solar cells and integrated circuit semiconductor devices, are generally manufactured by depositing a material layer on a substrate. Deposition of the material layer is generally accomplished by supporting the substrate in a reaction chamber, heating the substrate to a desired material layer deposition temperature, and exposing the substrate to another material layer precursor under environmental conditions selected to deposit the material layer on the substrate. Heating of the substrate may be accomplished using a radiative heating arrangement, which typically uses a radiative heat source, such as a lamp supported outside the reaction chamber in cooperation with a reflector, to transmit radiant energy through the walls of the reaction chamber to heat the substrate supported within the reaction chamber. Once the material layer reaches a desired thickness, the flow and heating of the precursors are typically stopped, and the substrate is sent on for further processing as required for the semiconductor device being manufactured.

[0003] In some material layer deposition processes, substrate-to-substrate variations in the material layer deposited on the substrate may affect the properties of the material layer and may affect the performance of the semiconductor device(s) formed using the material layer. For example, substrate-to-substrate variations in the thickness of the material layer may induce corresponding substrate-to-substrate variations in the electrical properties of the material layer deposited on the substrate and may affect the reliability of the semiconductor device(s) formed using the material layer. Substrate-to-substrate variations in the concentration of dopants as well as alloying elements such as germanium may also induce variations in the electrical properties of the material layer deposited on the substrate and may also affect the reliability of the semiconductor device(s) formed using the substrate. In some deposition processes, the material layer may roll up or down at the edge of the substrate, in which the material layer or material element concentration increases or decreases, respectively, at the edge of the substrate.

[0004] Various countermeasures exist to limit the variation in the material layer between substrates. For example, the substrate may be rotated relative to the flow of the material layer provided to the substrate to limit the variation in the material layer between substrates. The mass flow rate of the precursors may be locally increased or decreased at the edge of the substrate relative to the center to compensate for the variation in the material layer between the center and edge of the substrate that would otherwise be specific to the deposition process. The heating of the substrate may also be varied between the center and edge of the substrate, such as by varying the radiant energy generated by the radiant heat source lamps covering the substrate center versus the radiant heat source lamps covering the substrate edge, again to compensate for the variation in the material layer that would otherwise be specific to the deposition process. While generally satisfactory, such techniques may be inadequate to compensate for the variation in the material layer between substrates in some deposition processes.

[0005] Such systems and methods have generally been accepted for their intended purposes. However, there remains a need for improved reflectors, semiconductor processing systems having reflectors, and methods for depositing a layer of material on a substrate in a reaction chamber arrangement that uses a reflector. The present disclosure provides a solution to this need. Summary of the Invention

[0006] A reflector is provided that includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, opposite the slotted surface, separated from the slotted surface by a thickness of the reflector body, and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal to the planar surface for concentrating heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body.

[0007] In addition to or in the alternative to one or more of the features discussed above, further examples of the reflector may include the ellipsoidal surface being a first ellipsoidal surface and the reflector body having a second ellipsoidal surface. The second ellipsoidal surface may be separated from the slotted surface by a thickness of the reflector body. The second ellipsoidal surface may extend parallel to and from the first ellipsoidal surface by a planar surface.

[0008] In addition to or in the alternative to one or more of the above features, further embodiments of the reflector may include that the reflector body has a parabolic surface. The parabolic surface may define a parabolic profile. The parabolic profile may be orthogonal to the planar surface. The parabolic surface may extend parallel to an ellipsoidal surface of the reflector body.

[0009] In addition to or as an alternative to one or more of the above features, further embodiments of the reflector may include an ellipsoidal surface separating a parabolic surface of the reflector body from a planar surface of the reflector body.

[0010] In addition to or as an alternative to one or more of the above features, further embodiments of the reflector may include a parabolic surface of the reflector body separated from an ellipsoidal surface of the reflector body by a planar surface of the reflector body.

[0011] In addition to or as an alternative to one or more of the above features, further embodiments of the reflector may include that the reflector body has a partially cylindrical surface. The partially cylindrical surface may define a partially circular profile. The partially circular profile may be orthogonal to the planar surface. The partially cylindrical surface may extend parallel to an ellipsoidal surface of the reflector body.

[0012] In addition to or as an alternative to one or more of the above features, further embodiments of the reflector may include a partially cylindrical surface of the reflector body separating an ellipsoidal surface of the reflector body from a planar surface of the reflector body.

[0013] In addition to or as an alternative to one or more of the above features, further embodiments of the reflector may include a partially cylindrical surface of the reflector body separated from an ellipsoidal surface by a planar surface of the reflector body.

[0014] In addition to or as an alternative to one or more of the features discussed above, further embodiments of the reflector may include the reflector body having an internal rib portion. The internal rib portion may separate a planar surface of the reflector body from an ellipsoidal surface of the reflector body. The internal rib portion may have a partially cylindrical surface. The partially cylindrical surface may define a partially circular profile perpendicular to and facing the planar surface of the reflector body.

[0015] In addition to or in the alternative to one or more of the features discussed above, further embodiments of the reflector may include the reflector body having an intermediate rib portion. The intermediate rib portion may be separated from the planar surface by an ellipsoidal surface of the reflector body. The intermediate rib portion may have a parabolic surface defining a parabolic profile. The parabolic profile may be orthogonal to the planar surface of the reflector body.

[0016] In addition to or in the alternative to one or more of the features discussed above, further embodiments of the reflector may include the reflector body having an outer rib portion. The outer rib portion may be separated from the planar surface by an ellipsoidal surface of the reflector body. The outer rib portion may have a parabolic surface and an edge surface, the parabolic surface defining a parabolic profile orthogonal to the planar surface, and the edge surface being orthogonal to the planar surface.

[0017] In addition to or in the alternative to one or more of the features discussed above, further embodiments of the reflector may include the reflector body being formed from a bulk metallic material, and a gold coating material may be conformally deposited on both the planar and ellipsoidal surfaces of the reflector body.

[0018] In addition to or in the alternative to one or more of the above features, further embodiments of the reflector may include the slotted surface defining a plurality of slots therein. The plurality of slots may extend parallel to the ellipsoidal surface of the reflector body. The plurality of slots may fluidly couple the slotted surface with the planar surface and the ellipsoidal surface of the reflector body. The thickness of the reflector body may define a coolant channel therein. The coolant channel may extend between the slotted surface and the ellipsoidal surface of the reflector body.

[0019] In addition to or in the alternative to one or more of the features discussed above, further embodiments of the reflector may include that the reflector body may have a monolithic arrangement, or that the reflector body may have a segmented arrangement including a first body segment and at least one second segment. A planar surface may be defined on the first body segment and an ellipsoidal surface may be defined on the at least one second body segment, the second body segment spanning the reflector body and abutting the first body segment at a junction.

[0020] A semiconductor processing system is provided that includes a chamber body formed from a transparent material, a substrate support disposed within the chamber body, and a reflector as described above supported above the chamber body, wherein a lamp array including two or more linear lamps is supported between the reflector and the chamber body, a first linear lamp of the two or more linear lamps extending along a proximal focus of an elliptical profile defined by an ellipsoidal surface of the reflector body, and a second linear lamp of the two or more linear lamps separating a planar surface of the reflector body from the chamber body and parallel to the first linear lamp of the two or more linear lamps.

[0021] In addition to or in the alternative to one or more of the above features, a further embodiment of the semiconductor processing system may include a distal focus of an elliptical profile defined by the ellipsoidal surface intersects a surface of a substrate mounted on a substrate support.

[0022] In addition to or in the alternative to one or more of the features discussed above, further embodiments of the semiconductor processing system may include the chamber body having two or more external ribs. The two or more external ribs may extend parallel to the ellipsoidal surface of the reflector body. At least one of the two or more linear lamps may cover one of the plurality of external ribs.

[0023] In addition to or in the alternative to one or more of the features discussed above, further embodiments of the semiconductor processing system may include the chamber body having two or more external ribs. The external ribs may extend parallel to the ellipsoidal surface. A first linear lamp of the two or more linear lamps may be disposed between two of the external ribs.

[0024] In addition to or in the alternative to one or more of the features described above, further embodiments of the system may include a substrate support supported within the chamber body for rotation about an axis of rotation, and the proximal and distal foci may be offset from the axis of rotation by between about 135 millimeters and about 155 millimeters.

[0025] A method of material layer deposition is provided, which includes positioning a substrate at a distal focus of an elliptical profile of the reflector body in a semiconductor processing system including a reflector as described above, heating the substrate using electromagnetic radiation emitted by a lamp supported at a proximal focus of the elliptical profile of the reflector body, and further heating the substrate by reflecting the electromagnetic radiation emitted in a direction away from the substrate toward the distal focus using an ellipsoidal surface of the reflector body. A silicon-containing material layer is deposited on the substrate using an epitaxial deposition technique, the ellipsoidal surface concentrating a heat flux at the distal focus of the elliptical profile using the electromagnetic radiation reflected by the ellipsoidal surface, the heat flux concentrated at the distal focus of the elliptical profile limiting substrate-to-substrate variations in the silicon-containing material layer deposited on the substrate using an epitaxial deposition technique.

[0026] This Summary is provided to introduce selected concepts in a simplified form. These concepts are described in more detail below in the Detailed Description of the Disclosure. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0027] These and other features, aspects, and advantages of the inventions disclosed herein are described below with reference to drawings of certain specific embodiments, which are intended to illustrate, but not to limit, the invention. [Brief description of the drawings]

[0028] [Figure 1] FIG. 1 is a schematic diagram of a semiconductor processing system including a reflector according to the present disclosure, showing the reflector directing radiant energy generated by a lamp towards a substrate mounted within the semiconductor processing system. [Diagram 2] FIG. 2 is a schematic diagram of the semiconductor processing system of FIG. 1 illustrating a silicon-containing precursor being provided to a substrate while the substrate is being heated using reflected radiant energy in accordance with one embodiment of the present disclosure. [Diagram 3] FIG. 3 is a schematic diagram of the semiconductor processing system of FIG. 1 showing a reflective surface of a reflector that distributes radiant energy across a substrate according to a shape of the reflective surface, according to one embodiment of the present disclosure. [Figure 4] FIG. 4 is a perspective view of the reflector of FIG. 1 according to one embodiment of the present disclosure, showing a slotted surface and a contoured opposing surface of the reflector for distributing radiant energy across a substrate in a semiconductor processing system. [Diagram 5] FIG. 5 is a top view of the reflector of FIG. 1 according to one embodiment of the present disclosure, illustrating the slotted surface of the reflector and a number of slots defined within the slotted surface of the reflector. [Figure 6] FIG. 6 is a bottom plan view of the reflector of FIG. 1 according to one embodiment of the present disclosure, showing an ellipsoidal surface separated from a planar surface by a partially cylindrical surface, and an ellipsoidal surface separating the parabolic surface of the reflector from the planar surface of the reflector. [Figure 7] FIG. 7 is a side view of a portion of the reflector and chamber arrangement of FIG. 1 illustrating the irradiance distribution produced by electromagnetic radiation reflected by the ellipsoidal and planar surfaces of the reflector body according to one embodiment of the present disclosure. [Figure 8] FIG. 8 is a partial view of the chamber arrangement and reflector of FIG. 1 according to one embodiment of the present disclosure, illustrating a parabolic surface and a parabolic surface irradiance distribution generated by the parabolic surface using electromagnetic radiation reflected from the parabolic surface of the reflector. [Figure 9] FIG. 9 is a partial view of the chamber arrangement and reflector of FIG. 1 illustrating the ellipsoidal surface of the reflector and the ellipsoidal surface irradiance distribution produced by the ellipsoidal surface according to one embodiment of the present disclosure. [Figure 10] FIG. 10 is a partial view of the chamber arrangement and reflector of FIG. 1 showing partial cylindrical and planar surfaces and associated irradiance distributions of the partial cylindrical and planar surfaces according to one embodiment of the present disclosure. [Figure 11] FIG. 11 is a partial view of the chamber arrangement and reflector of FIG. 1 showing partial cylindrical and planar surfaces and associated irradiance distributions of the partial cylindrical and planar surfaces according to one embodiment of the present disclosure. [Figure 12] FIG. 12 is a graph of substrate edge temperature change in response to power applied to a lamp covering the edge of the substrate, illustrating the greater temperature control capabilities in a chamber arrangement including a reflector with an ellipsoidal surface covering the substrate edge. [Figure 13] FIG. 13 is a process flow diagram of a method of depositing a layer of material onto a substrate according to one embodiment of the present disclosure, illustrating operations of the method according to one illustrative and non-limiting embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale, for example, the relative size of some of the elements in the figures may be exaggerated compared to other elements to help improve understanding of the illustrated embodiments of the present disclosure.

[0030] Reference is now made to the drawings, in which like reference numbers identify similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not for purposes of limitation, a partial view of a reflector included in a semiconductor processing system according to the present disclosure is shown in FIG. 1 and generally designated by reference number 200. Other examples of reflectors, semiconductor processing systems having reflectors, and methods of depositing material layers using reflectors according to the present disclosure, or aspects thereof, are provided in FIGS. 2-13, as described. The systems and methods of the present disclosure may be used to deposit material layers on a substrate, such as during the manufacture of semiconductor devices, such as logic and memory semiconductor devices, and throughout this disclosure are generally not limited to a particular type of material layer, or any particular type of semiconductor device.

[0031] Referring to FIG. 1, a semiconductor processing system 100 is shown. The semiconductor processing system 100 includes a precursor delivery arrangement 102, a chamber arrangement 104 including a reflector 200, an exhaust source 106, and a controller 108. The precursor delivery arrangement 102 is connected to the chamber arrangement 104 by a precursor supply conduit 110 and is configured to provide a flow of one or more material layer precursors 10 to the chamber arrangement 104. The chamber arrangement 104 is configured to support a substrate 2 during deposition of a material layer 4 on an upper surface 6 of the substrate 2 using the material layer precursors 10. The exhaust source 106 is connected to the chamber arrangement 104 by an exhaust conduit 112 and fluidly couples the chamber arrangement 104 to an external environment 12 outside the semiconductor processing system 100, and the exhaust source 106 is configured to communicate a flow of residual precursors and / or reaction products 14 emitted by the chamber arrangement 104 to the external environment 12, for example, using a vacuum pump and / or an abatement device. The controller 108 is operatively connected to the precursor delivery arrangement 102 and the chamber arrangement 104 (or the chamber arrangement 104, if via a wired or wireless link 114) and responds to instructions recorded on a non-transitory machine-readable medium for depositing a material layer 4 on a substrate 2 using a material layer deposition method 300 (shown in FIG. 13 ) as described.

[0032] The term "substrate" as used herein may refer to any underlying material(s), including any underlying material(s) that may be modified or upon which a device, circuit, or film may be formed. Substrates may be continuous or non-continuous, rigid or flexible, solid or porous, and combinations thereof. Substrates may be in any form, such as, but not limited to, a powder, a plate, or a workpiece. Substrates in the form of a plate may include wafers of various shapes and sizes, including, for example, 300 millimeter wafers.

[0033] The substrate may be formed from a semiconductor material, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC). The substrate may include a pattern or may be a blanket type substrate without a pattern. As an example, a substrate in powder form may have applications for pharmaceutical manufacturing. A porous substrate may include one or more polymers. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0034] A continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs. In some processes, the continuous substrate may move through the process chamber, whereby the process continues until the end of the substrate is reached. The continuous substrate may be fed from a continuous substrate feeding system to enable the manufacture and production of the continuous substrate in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments, or fibers (e.g., ceramic or polymeric fibers). A continuous substrate may also include a carrier or sheet on which one or more non-continuous substrates are mounted.

[0035] Referring to FIG. 2, a precursor delivery arrangement 102 is shown according to one embodiment of the present disclosure. In the illustrated embodiment, the precursor delivery arrangement 102 includes a first precursor source 116, a second precursor source 118, a third precursor source 120, a carrier / purge fluid source 122, and an etchant source 124. In a particular embodiment, the precursor delivery arrangement 102 may be as shown and described in U.S. Pat. No. 11,053,591 to Ma et al., issued July 6, 2021, the contents of which are incorporated herein by reference in their entirety. Although shown and described herein as having a particular arrangement, it should be understood and appreciated that the precursor delivery arrangement 102 may have a different arrangement in other embodiments of the present disclosure and remain within the scope of the present disclosure.

[0036] The first precursor source 116 is connected to the chamber arrangement 104 by a first precursor supply valve 126 and includes a silicon-containing material layer precursor 16. The first precursor source 116 is further configured to provide a flow of the silicon-containing material layer precursor 16 to the chamber arrangement 104 using the first precursor supply valve 126. The first precursor supply valve 126 is in turn operatively associated with the controller 108 and may include a mass flow controller (MFC) device. It is contemplated that the silicon-containing material layer precursor 16 may include one or more of a halogenated silicon-containing precursor and / or a non-halogenated silicon-containing precursor. Examples of suitable halogenated silicon-containing precursors include dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). Examples of suitable non-halogenated silicon-containing precursors include silane (SiH4) and disilane (Si2H6).

[0037] The second precursor source 118 is similar to the first precursor source 116 and is additionally connected to the chamber arrangement 104 by a second precursor supply valve 128. It is contemplated that the second precursor source 118 includes a germanium-containing precursor 18 and that the second precursor source 118 is further configured to provide a flow of the germanium-containing precursor 18 to the chamber arrangement 104 using the second precursor supply valve 128. The second precursor supply valve 128 may be operatively associated with the controller 108, may include an MFC device, and may be configured to control the mass flow rate of the germanium-containing precursor 18 to the chamber arrangement 104. Examples of suitable germanium-containing precursors include germane (GeH4) and digermane (Ge2H6).

[0038] The third precursor source 120 is also similar to the first precursor source 116 and is additionally connected to the chamber arrangement 104 by a third precursor supply valve 130. It is contemplated that the third precursor source 120 includes a dopant-containing precursor 20 and is configured to provide a flow of the dopant-containing precursor 20 to the chamber arrangement 104 using the third precursor supply valve 130. The third precursor supply valve 130 may in turn be operatively associated with the controller 108, may include an MFC device, and may be configured to control the mass flow rate of the germanium-containing precursor 18 to the chamber arrangement 104. In certain embodiments, the dopant-containing precursor 20 may include a p-type dopant, such as phosphorus (P) and / or arsenic (As). According to certain embodiments, the dopant-containing precursor 20 may include an n-type dopant, such as boron (B) and / or gallium (Ga), and remain within the scope of the present disclosure.

[0039] The carrier / purge fluid source 122 is also similar to the first precursor source 116 and is additionally connected to the chamber arrangement 104 by a carrier / purge supply valve 132. It is contemplated that the carrier / purge fluid source 122 includes the carrier / purge fluid 22 and is configured to provide a flow of the carrier / purge fluid 22 to the chamber arrangement 104 using the carrier / purge fluid supply valve 132. The carrier / purge fluid supply valve 132 may then be operatively associated with the controller 108, may include an MFC device, and may be further configured to control the mass flow rate of the carrier / purge fluid 22 to the chamber arrangement 104. In certain embodiments, the carrier / purge fluid 22 may include an inert gas, such as nitrogen (N2) gas. According to certain embodiments, the carrier / purge fluid 22 may include a noble gas, such as argon (Ar) and / or helium (He). It is also contemplated that the carrier / purge fluid 22 may include hydrogen (H2) gas and remain within the scope of the present disclosure.

[0040] The etchant source 124 is also similar to the first precursor source 116 and is additionally connected to the chamber arrangement 104 by an etchant supply valve 134. It is contemplated that the etchant source 124 includes an etchant fluid 24 and is configured to provide a flow of the etchant fluid 24 to the chamber arrangement 104 using the etchant supply valve 134. The etchant supply valve 134 may in turn be operatively associated with the controller 108, which may include an MFC device and may be configured to control the mass flow rate of the etchant fluid 24 to the chamber arrangement 104. In a particular embodiment, the etchant fluid 24 may include a halogen, such as chlorine (Cl) or fluorine (F). Examples of suitable etchant fluids include chlorine (Cl2) gas, hydrochloric acid (HCl), fluorine (F2) gas, and hydrofluoric acid (HF).

[0041] 3, a chamber arrangement 104 and a controller 108 are shown in accordance with an embodiment of the present disclosure. In the illustrated embodiment, the chamber arrangement 104 has a single wafer cross-flow arrangement and includes a chamber body 136, an inlet flange 138, and an exhaust flange 140. The chamber arrangement 104 also includes an upper heater element array 142, a lower heater element array 144, a lift and rotate module 146, a partition 148, a substrate support 150, a support member 152, and a shaft member 154. In one particular embodiment, the chamber arrangement 104 may be as shown and described in U.S. Patent Application Publication No. 2018 / 0363139A1 to Rajavelu et al., filed April 25, 2018, the contents of which are incorporated herein by reference in their entirety. Although shown and described herein as having a particular arrangement, it is to be understood and appreciated that the chamber arrangement 104 may have a different arrangement in other embodiments of the present disclosure (e.g., including additional elements and / or excluding certain elements shown and described herein) and remain within the scope of the present disclosure.

[0042] The chamber body 136 is formed from a permeable material 156 and has an inlet end 158 and a longitudinally opposed exhaust end 160, with a plurality of exterior ribs 162 extending laterally around the exterior of the chamber body 136 and spaced longitudinally between the inlet end 158 and the exhaust end 160 of the chamber body 136. The inlet flange 138 abuts the inlet end 158 of the chamber body 136 and connects the precursor delivery arrangement 102 (shown in FIG. 1 ) to the chamber body 136. The exhaust flange 140 abuts the exhaust end 160 of the chamber body 136 and is fluidly connected to the inlet flange 138 by an interior 164 of the chamber body 136 and connects the chamber body 136 to the exhaust source 106 (shown in FIG. 1 ). It is contemplated that the divider 148 is secured within the interior 164 of the chamber body 136 and that the divider 148 divides the interior 164 of the chamber body 136 into an upper chamber 166 and a lower chamber 168. It is also contemplated that the divider 148 has a divider opening 170 extending therethrough and that the divider 148 is formed from an impermeable material 172. In certain embodiments, the transmissive material 156 forming the chamber body 136 may be transmissive to electromagnetic radiation in the infrared wavelength range, such as quartz or sapphire. According to certain embodiments, the impermeable material 172 forming the divider 148 may be opaque to electromagnetic radiation in the infrared wavelength range, such as silicon carbide, as a non-limiting example.

[0043] The substrate support 150 is disposed within the interior 164 of the chamber body 136 and supported for rotation R about an axis of rotation 174. In this regard, it is contemplated that the substrate support 150 is disposed within the partition opening 170 and coupled to the lift-and-rotate module 146 through a support member 152 and a shaft member 154. The support member 152 is in turn disposed within the lower chamber 168 of the chamber body 136 and along the axis of rotation 174 and is fixed in rotation relative to the substrate support 150. The shaft member 154 is fixed in rotation relative to the support member 152 and extends through the lower chamber 168 of the chamber body 136 and a lower wall of the chamber body 136 and is connected to the lift-and-rotate module 146 for rotating the substrate support 150 about the axis of rotation 174. It is contemplated that the support member 152 and / or the shaft member 154 are formed from a permeable material, such as the permeable material 156. It is also contemplated that the substrate support 150 may be configured to provide edge support for the substrate 2, such that, for example, a peripheral region of the substrate 2 abuts the substrate support 150 while an interior region of the substrate is spaced apart from the substrate support 150. Examples of suitable substrate supports include those shown and described in U.S. Patent Application Publication No. 2022 / 0352006 A1 to Huang et al., filed April 27, 2022, the contents of which are incorporated herein by reference in their entirety.

[0044] The lower heater element array 144 is supported below the chamber body 136 and is configured to transmit electromagnetic radiation in the infrared wavelength range into the interior 164 of the chamber body 136 to heat the substrate 2 during deposition of the material layer 4 thereon. In this regard, it is contemplated that the lower heater element array 144 includes a plurality of linear heater elements, such as linear filament-type linear lamps, each supported below the chamber body 136 and laterally spaced apart from one another below the chamber body 136, with each linear heater element of the lower heater element array 144 extending longitudinally between an inlet end 158 and an exhaust end 160 of the chamber body 136.

[0045] The upper heater element array 142 is supported above the chamber body 136 and configured to transmit electromagnetic radiation in the infrared wavelength range into the interior 164 of the chamber body 136 to heat the substrate 2 during deposition of the material layer 4 thereon, and may include a plurality of filament type lamps, such as linear filament type lamps. In this regard, the plurality of linear filament type lamps may extend laterally across a top surface of the chamber body 136 and may be longitudinally spaced apart from one another between the inlet end 158 and the exhaust end 160 of the chamber body 136. It is also contemplated that a reflector 200 is supported above the chamber body 136, the upper heater element array 142 separates the reflector 200 from the chamber body 136, and a pyrometer 176 is supported above the upper heater element array 142 and optically coupled along an optical axis 178 to the interior 164 of the chamber body 136 and configured to provide temperature measurements to the controller 108 indicative of the temperature of the substrate 2 supported within the interior 164 of the chamber body 136.

[0046] 3, the controller 108 includes a device interface 180, a processor 182, a user interface 184, and a memory 186. The device interface 180 connects the processor 182 to a wired or wireless link 114 through which the precursor delivery arrangement 102 (shown in FIG. 1), the chamber arrangement 104, and / or the exhaust source 106 (shown in FIG. 1). The processor 182 is operatively connected to the user interface 184 to provide user output to the user interface 184 and / or to receive user input from the user interface 184, and is disposed in communication with the memory 186. The memory 186 includes a non-transitory machine-readable medium having a number of program modules 188 that, when read by the processor 182, cause the processor 182 to perform certain operations. These operations include operations of a material layer deposition method 300, as described. Although shown and described herein as having a particular arrangement, it should be understood and appreciated that the controller 108 may have a different arrangement in other embodiments (e.g., a distributed computing architecture) and remain within the scope of the present disclosure.

[0047] In the illustrated embodiment, the substrate 2 has a radially inner inner surface portion 8 (shown in FIG. 7), a radially outer peripheral surface portion 3 (shown in FIG. 7), and a bevel 5 (shown in FIG. 7). When mounted on the substrate support 150, the axis of rotation 174 intersects the radially inner inner surface portion 8 of the substrate 2, and the radially inner inner surface portion 8 extends circumferentially about the axis of rotation 174. The radially outer peripheral surface portion 3 extends around the radially inner inner surface portion 8 and is substantially annular in shape. The bevel 5 extends circumferentially about the radially outer surface portion 3 and is separated from the radially inner inner surface portion 8 by the radially outer peripheral surface portion 3, and supports the substrate 2 on the substrate support 150 in an edge support regime when the substrate 2 is mounted on the substrate support 150. In certain embodiments, the radially inner inner surface portion 8 may extend from about 120 millimeters to about 140 millimeters from the axis of rotation 174, such as about 135 millimeters from the axis of rotation 174. According to certain embodiments, the radially outer peripheral surface portion 3 may extend from about 120 millimeters and about 150 millimeters from the axis of rotation 174, such as about 135 millimeters and about 149 millimeters from the axis of rotation 174. The bevel 5 may have a radial width of about 1 millimeter to about 3 millimeters, and may have a radial width of about 1 millimeter in certain embodiments of the present disclosure. It is also contemplated that the substrate 2 may include a pattern 7 (shown in FIG. 7) according to certain embodiments and remain within the scope of the present disclosure.

[0048] 4 and 8-11, a reflector 200 is shown in a perspective view. The reflector 200 generally includes a reflector body 202 having a slotted surface 204, a planar surface 206 separated from the slotted surface 204 by a thickness 208 of the reflector body 202, and an ellipsoidal surface 210 also separated from the slotted surface 204 by the thickness 208 of the reflector body 202 and further spaced longitudinally from the planar surface 206 of the reflector body 202. The slotted surface 204 defines a plurality of slots 212 therein. Each of the plurality of slots 212 extends through the thickness 208 of the reflector body 202 and fluidly connects the slotted surface 204 of the reflector body 202 to the planar surface 206 and the ellipsoidal surface 210 of the reflector body 202. It is contemplated that one or more of the plurality of slots 212 fluidly couple the slotted surface 204 to the ellipsoidal surface 210 of the reflector body 202 and that one or more of the plurality of slots 212 fluidly couple the slotted surface 204 of the reflector body 202 to the planar surface 206 of the reflector body 202. As would be understood by one of ordinary skill in the art in view of the present disclosure, the plurality of slots 212 allows for control of the temperature of the chamber body 136 (shown in FIG. 2 ) and / or the upper heater element array 142 (shown in FIG. 2 ) by driving a flow of air based coolant through the plurality of slots 212 and across the chamber body 136 and / or the upper heater element array 142.

[0049] 11, the planar surface 206 of the reflector body 202 is substantially planar and configured to reflect electromagnetic radiation incident thereon according to the planar surface irradiance distribution 214. In this regard, it is contemplated that the planar surface 206 defines a planar surface profile 216 that extends longitudinally across the planar surface 206. The planar surface profile 216 reflects electromagnetic radiation incident along the planar surface 206 according to specular or specular reflection. As would be understood by one of ordinary skill in the art in view of the present disclosure, specular or specular reflection by the planar surface profile 216 causes a line of electromagnetic radiation incident on the planar surface 206 to emerge from the planar surface 206 at the same angle relative to the surface as it did on the surface, but on the opposite side of the planar surface normal within the plane formed by the incident and reflected rays, such that the planar surface 206 limits heat flux variations within an area irradiated using the planar irradiance distribution 214.

[0050] 9, the ellipsoidal surface 210 of the reflector body 202 is configured to focus the electromagnetic radiation reflected from the ellipsoidal surface 210 at the locations covered by the ellipsoidal surface 210 according to an ellipsoidal surface irradiance distribution 218. In this regard, it is contemplated that the ellipsoidal surface 210 defines an ellipsoidal profile 222. The ellipsoidal profile 222 has a proximal focus 224 and a distal focus 226 disposed along a major axis 228 that is substantially orthogonal to the planar surface 206, and further has a proximal apex 230 and a distal apex 232 also disposed along the major axis 228, which in turn is orthogonal to a minor axis 234 of the ellipsoidal profile 222, which minor axis 234 is substantially parallel to the planar surface 206 of the reflector body 202. Advantageously, reflecting electromagnetic radiation incident on the ellipsoidal surface 210 using an ellipsoidal profile 222 with an ellipsoidal surface irradiance distribution 218 concentrates the heat flux associated with the reflected irradiance within the area covered by the ellipsoidal surface 210 of the reflector body 202, increasing the temperature fluctuations associated with the illumination reflected by the reflector body 202.

[0051] With continued reference to FIG. 4, it is contemplated that the reflector body 202 may have a parabolic surface 236 in certain embodiments of the present disclosure. As shown in FIG. 8, the parabolic surface 236 may be configured to distribute electromagnetic radiation reflected by the parabolic surface 236 over an area covered by the reflector body 202 and one or more surfaces longitudinally adjacent to the parabolic surface 236 according to a parabolic surface irradiance distribution 238. In this regard, it is contemplated that the parabolic surface 236 defines a parabolic profile 240. The parabolic profile 240 may be orthogonal to the planar surface 206 or may extend parallel to the ellipsoidal surface 210 of the reflector body 202, and may have a unique focus 242 and apex 244. It is contemplated that a unique focal point 242 is located between the reflector body 202 and the chamber body 136, an apex is located on the parabolic surface 236, and the unique focal point 242 and apex 244 are located on an axis of symmetry 246 defined by the parabolic profile 240 and perpendicular to the planar surface 206. It is contemplated that the parabolic profile 240 includes a locus of points equidistant from the axis of symmetry 246 and a directrix 248 of the parabolic profile 240, the directrix 248 being substantially parallel to the planar surface 206. As would be understood by one of ordinary skill in the art in light of the present disclosure, the parabolic surface irradiance distribution 238 distributes the electromagnetic radiation reflected by the parabolic surface 236 over a larger area than the area covered by the parabolic surface 236, reducing the average heat flux in the area covered by the parabolic surface 236 compared to the area covered by adjacent surfaces of the reflector body 202, and increasing the temperature difference between the area covered by the parabolic surface 236 and the adjacent areas covered by surfaces on the reflector body 202 adjacent to the parabolic surface 236.

[0052] With continued reference to FIG. 4 , the reflector body 202 may have a partially cylindrical surface 250 in certain embodiments of the present disclosure. The partially cylindrical surface 250 may extend parallel to the ellipsoidal surface 210 of the reflector body 202. The partially cylindrical surface 250 may further separate the planar surface 206 of the reflector body 202 from the ellipsoidal surface 210 of the reflector body 202. As shown in FIG. 10 , the partially cylindrical surface 250 may be configured to longitudinally shift electromagnetic radiation reflected by the partially cylindrical surface 250 from an area covered by the partially cylindrical surface 250 to an area longitudinally offset according to a partially cylindrical surface irradiance distribution 252. In this regard, it is contemplated that the partially cylindrical surface 250 defines a partially circular profile 254 having a center 256 and a radius 258, and that a locus of points defining a circumferential segment of the partially circular profile 254 lies on the partially cylindrical surface 250. In a further respect, the locus of points defining the circumferential segment of the circular segment of the partially circular profile 254 may have an angular sweep of about 20 degrees to about 120 degrees, or an angular sweep of about 45 degrees to about 120 degrees, or even an angular sweep of about 90 degrees to about 90 degrees. Advantageously, shifting the electromagnetic radiation reflected using the partially cylindrical surface 250, where the partially circular profile 254 has an angular sweep within these ranges, can smooth out variations in heat flux within the area covered by the planar surface 206, e.g., at the longitudinal edges, when specular reflection of the planar surface 206 may otherwise cause variations in heat flux.

[0053] 5, the reflector body 202 is shown in a top view. In the illustrated embodiment, the reflector body 202 is configured to be supported above the chamber body 136 and is configured to adjust the heat flux distribution within the interior 164 (shown in FIG. 3) of the chamber body 136 (shown in FIG. 3) according to the location and contour of the surface facing the chamber body 136. In this regard, it is contemplated that the reflector body 202 is generally rectangular in shape and has an injection edge 260, an exhaust edge 262, a first lateral edge 264, and a second lateral edge 266. The injection edge 260 of the reflector body 202 may extend between the first lateral edge 264 and the second lateral edge 266 of the reflector body 202 and bound the parabolic surface 236 of the reflector body 202. The first lateral edge 264 and the second lateral edge 266 extend longitudinally between the inlet edge 260 and the outlet edge 262 of the reflector body 202, are parallel to each other, and are orthogonal to both the inlet edge 260 and the outlet edge 262 of the reflector body 202. It is contemplated that the first lateral edge 264 and the second lateral edge 266 of the reflector body 202 bound the planar surface 206 (shown in FIG. 4 ) and the ellipsoidal surface 210 (shown in FIG. 4 ) of the reflector body 202. It is also contemplated that the first lateral edge 264 and the second lateral edge 266 further bound the parabolic surface 236 (shown in FIG. 4 ) and the partially cylindrical surface 250 (shown in FIG. 4 ) of the reflector body 202.

[0054] The plurality of slots 212 extend laterally across the slotted surface 204 of the reflector body 202 and are laterally offset from both a first lateral edge 264 and a second lateral edge 266 of the reflector body 202. In this regard, it is contemplated that the plurality of slots 212 may be longitudinally spaced apart from one another between the first lateral edge 264 and the second lateral edge 266 of the reflector body 202 and substantially parallel to one another. In a further regard, the plurality of slots 212 may be substantially parallel to either (or both) of the inlet edge 260 and the outlet edge 262 of the reflector body 202, and the plurality of slots 212 may be substantially perpendicular to either (or both) of the first lateral edge 264 and the second lateral edge 266 of the reflector body 202, with each of the plurality of slots 212 terminating at a location laterally offset from the first lateral edge 264 and the second lateral edge 266. In the illustrated embodiment, the reflector body 202 has eleven slots. This is for illustrative purposes only and is non-limiting. As will be understood by one of ordinary skill in the art in light of this disclosure, the reflector body 202 may have less than eleven slots or more than eleven slots and remain within the scope of this disclosure.

[0055] In certain embodiments, the reflector body 202 may include one or more temperature sensor seats 268. The one or more temperature sensor seats 268 may include a through opening 270 extending through the thickness 208 (shown in FIG. 4 ) of the reflector body 202 and a fastener pattern 272 defined in the slotted surface 204 of the reflector body 202. The fastener pattern 272 may extend about the through opening 270 and may be configured to secure a temperature sensor, such as a pyrometer 176 (shown in FIG. 2 ), to the reflector body 202. The through opening 270 extends through the reflector body 202 and the thickness 208 of the reflector body 202 and fluidly couples the slotted surface 204 to an opposing surface of the reflector body 202. In this regard, it is contemplated that the through opening 270 may optically couple the slotted surface 204 of the reflector body 202 to the planar surface 206 of the reflector body 202 (shown in FIG. 4 ) or may optically couple the slotted surface 204 of the reflector body 202 to the ellipsoidal surface 210 of the reflector body 202 (shown in FIG. 4 ). In certain embodiments, the reflector body 202 may fluidly separate the through opening 270 from the plurality of slots 212. Advantageously, this may improve the reliability and / or accuracy of temperature measurements obtained by an optical temperature sensor, e.g., a pyrometer, by restricting airflow through the through opening 270 that may otherwise affect temperature measurements obtained using an optical temperature sensor, e.g., a pyrometer 176 (shown in FIG. 3 ).

[0056] According to one particular embodiment, the one or more temperature sensor seats 268 may be first temperature sensor seats 268, and the reflector body 202 may have one or more second temperature sensor seats 274. The one or more second temperature sensor seats 274 may be similar to the first temperature sensor seats 268, or may additionally be laterally and / or longitudinally offset from the first temperature sensor seats 268, and may optically couple the slotted surface 204 to the same surface of the reflector body 202 as the first temperature sensor seats 268, or another surface of the reflector body 202 to the slotted surface 204. As will be appreciated by those of ordinary skill in the art in view of the present disclosure, this allows for temperature measurements to be taken at more than one location beneath the reflector body 202, for example at different locations within the chamber body 136 (shown in FIG. 3), and / or from both the chamber body 136 and the transmissive material 156 (shown in FIG. 3) forming the chamber body 136. In the illustrated embodiment, the reflector body has four sensor seats such that the reflector body 202 is configured to support three substrate pyrometers (e.g., "wafer" pyrometers) and only one chamber pyrometer (e.g., "quartz" pyrometer). Examples of suitable substrate pyrometers and quartz pyrometers include those shown and described in U.S. Patent Application Publication No. 2022 / 0301906A1 to Naik et al., filed March 17, 2022, the contents of which are incorporated herein by reference in their entirety.

[0057] 6, the reflector body 202 is shown in a bottom plan view according to one embodiment of the present disclosure. In the illustrated embodiment, the planar surface 206 is intermediate the injection edge 260 and the exhaust edge 262 of the reflector body 202. In this regard, it is contemplated that the planar surface 206 of the reflector body 202 is longitudinally spaced apart from the injection edge 260 of the reflector body 202 by a distance that is substantially equal to or greater than the longitudinal span 276 of the ellipsoidal surface 210 of the reflector body 202, for example. In a particular embodiment, the ellipsoidal surface 210 may be a first ellipsoidal surface 210, and the reflector body 202 may include a second ellipsoidal surface 278. The second ellipsoidal surface 278 may be similar to the first ellipsoidal surface 210, may be separated (e.g., longitudinally) from the first ellipsoidal surface 210 by an additional planar surface 206, which may further separate the planar surface 206 from the exhaust edge 262 of the reflector body 202, and may extend parallel to the first ellipsoidal surface 210 between the first lateral edge 264 and the second lateral edge 266. As shown and described herein, the reflector body 202 includes two ellipsoidal surfaces. As would be understood by one of ordinary skill in the art in view of this disclosure, the reflector body 202 may have a single ellipsoidal surface, or three or more ellipsoidal surfaces, and remain within the scope of this disclosure.

[0058] In a particular embodiment, the parabolic surface 236 may be a first parabolic surface 236 separated from the planar surface 206 by the ellipsoidal surface 210, and the reflector body 202 may have a second parabolic surface 280. The second parabolic surface 280 may be similar to the first parabolic surface 236 and may additionally separate the second ellipsoidal surface 278 from the exhaust edge 262 of the reflector body 202 and may extend parallel to the first parabolic surface 236 between the first lateral edge 264 and the second lateral edge 266 of the reflector body 202. In this regard, the second parabolic surface 280 may separate both the planar surface 206 and the second ellipsoidal surface 278 from the exhaust edge 262 of the reflector body 202. As shown and described herein, the reflector body 202 includes two parabolic surfaces. As will be understood by one of ordinary skill in the art in light of this disclosure, the reflector body 202 may have a single parabolic surface, or three or more parabolic surfaces, and remain within the scope of the present disclosure.

[0059] In a particular embodiment, the partially cylindrical surface 250 may be a first partially cylindrical surface 250, and the reflector body 202 may have a second partially cylindrical surface 282. The second partially cylindrical surface 282 may be similar to the first partially cylindrical surface 250, may additionally separate the planar surface 206 from the second ellipsoidal surface 278 and the vent edge 262 of the reflector body 202, and may extend parallel to the first partially cylindrical surface 250 between the first lateral edge 264 and the second lateral edge 266 of the reflector body 202. The second partially cylindrical surface 282 may further separate the planar surface 206 from the second parabolic surface 280 of the reflector body 202. As shown and described herein, the reflector body 202 includes two partially cylindrical surfaces. As will be understood by one of ordinary skill in the art in light of this disclosure, the reflector body 202 may have a single partially cylindrical surface, or three or more partially cylindrical surfaces, and remain within the scope of this disclosure.

[0060] In certain embodiments, the reflector body 202 may be monolithically formed, thereby having a monolithic arrangement. In this regard, the reflector body 202 may be continuous and extend without interruption between the inlet edge 260 and the exhaust edge 262 of the reflector body 202. In a further regard, the reflector body 202 may be continuous and further extend with an interruption between the first lateral edge 264 and the second lateral edge 266 of the reflector body 202. As will be appreciated by those skilled in the art in view of the present disclosure, forming the reflector body 202 as a monolithic body may improve temperature control of the chamber body 136 (shown in FIG. 2 ), for example, by limiting leakage of coolant through joints defined between segments of the reflector body 202.

[0061] In certain embodiments, the reflector body 202 may be segmented, thereby having a segmented arrangement. In this regard, the reflector body 202 may include a first reflector body segment 284 and at least one second reflector body segment 286 that abut one another at a joint 288. Advantageously, forming the reflector body 202 as a segmented reflector body may simplify servicing and maintenance of the chamber arrangement 104 (shown in FIG. 1 ), for example, by limiting the weight of the reflector body segments and thereby allowing removal and replacement of the reflector body 202 from the chamber arrangement 104 by a single maintenance worker.

[0062] In certain embodiments, the reflector body 202 may be formed from a bulk metal material 290 (shown in FIG. 7 ) and may have a reflective coating 292. In certain embodiments, the bulk metal material 290 may include (or consist of, or consist essentially of) an aluminum-containing material, such as, by way of non-limiting example, a 6064 aluminum alloy. According to certain embodiments, the bulk metal material 290 may include (or consist of, or consist essentially of) a copper and zinc-containing material, such as a red brass or a dezincification resistant (DZR) brass material. As would be appreciated by one of ordinary skill in the art in view of this disclosure, forming the reflector body 202 from an aluminum-containing material may limit the weight and / or cost of the reflector body. As would also be appreciated by one of ordinary skill in the art in view of this disclosure, forming the reflector body 202 from brass may limit the tendency of the reflector body to warp when heated, allowing the reflector to be employed in chamber arrangements employed for material layer deposition at high temperatures. Advantageously, forming the reflector body 202 from DZR brass material allows for cooling of the reflector body with a liquid coolant that is potentially corrosive to brass material (e.g., due to zinc leaching), limiting distortion of the reflector body 202 due to heating, such as in chamber arrangements employed for material layer deposition at relatively high temperatures (e.g., greater than 800 degrees Celsius). In this regard, the reflector body 202 may define one or more coolant channels 291 therein. The one or more coolant channels 291 may extend further laterally into the reflector body 202 and may additionally extend between the slotted surface 204 of the reflector body 202 and the ellipsoidal surface 210 of the reflector body 202 to channel liquid coolant through the reflector body 202.

[0063] The reflective coating 292 covers at least a portion of the reflector body 202, such as at least a portion of the bulk metallic material 290 forming the reflector body 202, and may be reflective to electromagnetic radiation in the infrared waveband. In certain embodiments, the reflective coating 292 may cover the planar surface 206 and the ellipsoidal surface of the reflector body 202. In certain embodiments, the reflective coating 292 may cover the parabolic surface 236 and the partially cylindrical surface 250 of the reflector body 202. It is also contemplated that the reflective coating 292 may cover the second ellipsoidal surface 278, the second parabolic surface 280, and / or the second partially cylindrical surface 282. The reflective coating 292 may include (or consist of, or consist essentially of) a reflective material, such as, by way of non-limiting example, silver or gold. Advantageously, reflective materials such as silver and gold may have thermal expansion coefficients sufficiently similar to those of the bulk metal materials mentioned above within the temperature range in which the reflector body 202 is maintained during operation to limit distortion of the reflective coating 292 due to thermal cycling of the reflector body 202.

[0064] 7-11, a portion of the chamber arrangement 104 including the substrate support 150 and the upper heater element array 142 is shown according to one embodiment of the present disclosure. In the illustrated embodiment, the reflector body 202 has an inner rib 294, an outer rib 296, and an intermediate rib 298. The inner rib 294 extends laterally between a first lateral edge 264 (shown in FIG. 5) and a second lateral edge 266 (shown in FIG. 5), longitudinally separates the planar surface 206 from the pour edge 260, and is bounded by the partially cylindrical surface 250 and a portion of the ellipsoidal surface 210 of the reflector body 202. In the illustrated embodiment, the inner rib 294 is a first inner rib 294, and the reflector body 202 has a second inner rib 201. The second inner rib 201 is similar to the first inner rib 294 and is additionally separated from the first inner rib 294 by a planar surface 206, further separating the first inner rib 294 from the exhaust edge 262 of the reflector body 202. Although shown and described herein as having two inner ribs, it should be understood and appreciated that the reflector body 202 may have only one inner rib or three or more inner ribs and remain within the scope of the present disclosure.

[0065] The outer rib 296 extends longitudinally between the inner rib 294 and the injected edge 260 of the reflector body 202, and extends laterally between the first lateral edge 264 and the second lateral edge 266, bounded by a portion of the parabolic surface 236 and the injected edge 260. In the illustrated embodiment, the outer rib 296 is a first outer rib 296, and the reflector body 202 has a second outer rib 203. The second outer rib 203 is similar to the first outer rib 296 and is additionally separated longitudinally from the first inner rib 294 by a planar surface 206, further separating the exhaust edge 262 from the planar surface 206 of the reflector body 202. Although shown and described herein as having two outer ribs, it should be understood and appreciated that the reflector body 202 may have only one outer rib or three or more outer ribs and remain within the scope of the present disclosure.

[0066] The intermediate rib 298 is longitudinally intermediate (e.g., between) the inner rib 294 and the outer rib 296, and in this respect longitudinally separates the inner rib 294 from the outer rib 296. In a further respect, it is contemplated that the intermediate rib 298 longitudinally separates the inner rib 294 from the outer rib 296 and extends between the first lateral edge 264 and the second lateral edge 266, and is bounded by longitudinally adjacent portions of the ellipsoidal surface 210 and the parabolic surface 236. In the illustrated embodiment, the intermediate rib 298 is a first intermediate rib 298 and the reflector body 202 has a second intermediate rib 205. The second intermediate rib 205 is similar to the first intermediate rib 298 and is additionally separated from the first intermediate rib 298 by a planar surface 206 and is further bounded by longitudinally adjacent portions of the second ellipsoidal surface 278 and the second paraboloidal surface 280. Although shown and described herein as having two intermediate ribs, it should be understood and appreciated that the reflector body 202 may have only one intermediate rib or additional intermediate ribs and remain within the scope of the present disclosure.

[0067] In the illustrated embodiment, the upper heater element array 142 includes eleven upper linear lamps extending laterally across the upper wall of the chamber body 136 and spaced longitudinally between the inlet end 158 and the exhaust end 160 of the chamber body 136. In this regard, the upper heater element array 142 includes first and second outer linear lamps 190, 192, first and second intermediate linear lamps 194, 196, first and second inner linear lamps 198, 101, and five central linear lamps 103. Although shown and described herein as having eleven laterally extending linear lamps in a longitudinally spaced arrangement, it should be understood and appreciated that the chamber arrangement 104 (shown in FIG. 1 ) may have a different heater element array arrangement and remain within the scope of the present disclosure.

[0068] The first outer linear lamp 190 is supported above the chamber body 136 (shown in FIG. 3 ) and between the reflector body 202 and the chamber body 136 at the injection end 158 (shown in FIG. 3 ) of the chamber body 136. The first outer linear lamp 190 is further aligned with respect to the first parabolic surface 236 of the reflector body 202 and disposed along an axis of symmetry 246 defined by the first parabolic surface 236, and may laterally cover a single focal point 242 of the parabolic profile 240 defined by the parabolic surface 236. As shown in FIG. 8 , when so positioned, electromagnetic radiation emitted by the first outer linear lamp 190 emitted in a direction away from the chamber body 136 is reflected along the axis of symmetry 246 (shown in FIG. 8 ) towards the chamber body 136 and into the interior 164 (shown in FIG. 3 ) of the chamber body 136 according to the parabolic surface irradiance distribution 238. It is intended that the reflected electromagnetic radiation irradiates a portion of the substrate support 150 radially outward of the substrate 2 (e.g., a rim portion of the substrate support 150) and a portion of the partition 148 extending around the substrate support 150.

[0069] 7, the second outer linear lamp 192 is similar to the first outer linear lamp 190 and is additionally supported between the second parabolic surface 280 and the chamber body 136 at a location proximate the exhaust end 160 (shown in FIG. 3) of the chamber body 136. It is contemplated that the second outer linear lamp 192 illuminates structures located within the interior 164 of the chamber body 136 using a second parabolic surface distribution 209. Illumination may be directed along and distributed about an axis of symmetry of the second parabolic profile defined by the second parabolic surface 280 of the reflector body 202.

[0070] The first intermediate linear lamp 194 is supported between the reflector body 202 and the chamber body 136 above the chamber body 136 and between the first outer linear lamp 190 and the second outer linear lamp 192. The first intermediate linear lamp 194 is further supported between the first ellipsoidal surface 210 of the reflector body 202 and the upper wall of the chamber body 136 and along the major axis 228 (shown in FIG. 9 ) of the elliptical profile 222 (shown in FIG. 9 ) defined by the ellipsoidal surface 210 of the reflector body 202. As shown in FIG. 9 , the first intermediate linear lamp 194 may laterally cover a proximal focus 224 (shown in FIG. 9 ) of the elliptical profile 222 defined by the ellipsoidal surface 210 of the reflector body 202. The first intermediate linear lamp 194 may further extend laterally between a first lateral edge 264 (shown in FIG. 5 ) and a second lateral edge 266 (shown in FIG. 5 ) of the reflector body 202, centered at a proximal focal point 224 and parallel to the ellipsoidal surface 210. So positioned, electromagnetic radiation emitted by the first intermediate linear lamp 194 emitted in a direction away from the chamber body 136 is reflected along the major axis 228 of the ellipsoidal profile 222 towards the chamber body 136 and into the interior 164 of the chamber body 136 according to the first ellipsoidal surface irradiance distribution 218.

[0071] 7, the second intermediate linear lamp 196 is similar to the first intermediate linear lamp 194 and is additionally supported between the second ellipsoidal surface 278 and the chamber body 136 (shown in FIG. 3) at a location proximate to the second outer linear lamp 192. It is contemplated that the second intermediate linear lamp 196 uses a second ellipsoidal surface distribution 215 to illuminate structures located within the interior 164 of the chamber body 136. In this regard, it is contemplated that the second ellipsoidal surface 278 also illuminates the radially outer peripheral surface portion 3 along a second major axis 217 of a second elliptical profile 219 defined by the second ellipsoidal surface 278 of the reflector body 202. As one of ordinary skill in the art would appreciate in view of the present disclosure, this may increase the adjustability provided by the first ellipsoidal surface 210 of the reflector body 202. As one of ordinary skill in the art would also understand in light of the present disclosure, this can amplify the adjustment capabilities provided by the first ellipsoidal surface 210 in embodiments where one or more of the external ribs 162 (shown in FIG. 3 ) of the chamber body 136 protect the substrate 2 from electromagnetic radiation reflected by the first ellipsoidal surface 210.

[0072] The first inner linear lamp 198 is supported between the reflector body 202 and the chamber body 136 (shown in FIG. 3 ) above the chamber body 136 and at a location longitudinally between the first intermediate linear lamp 194 and the exhaust end 160 (shown in FIG. 3 ) of the chamber body 136. The first inner linear lamp 198 is below the first partially cylindrical surface 250 of the reflector body 202 and further extends parallel to the first partially cylindrical surface 250 of the reflector body 202. As shown in FIG. 10 , the first inner linear lamp 198 may laterally (e.g., concentrically) cover a center 256 of a first partially circular profile 254 defined by the first partially cylindrical surface 250 of the reflector body 202. When so positioned, electromagnetic radiation emitted by the first inner linear lamp 198 in a direction away from the chamber body 136 is reflected by the first partially cylindrical surface 250 toward the chamber body 136 and into the interior 164 (shown in FIG. 3 ) of the chamber body 136 and shifted toward the axis of rotation 174 according to the first partially cylindrical surface irradiance distribution 252.

[0073] With continued reference to FIG. 7, the second inner linear lamp 101 is similar to the first inner linear lamp 198 and is additionally supported between the second partially cylindrical surface 282 and the chamber body 136 (shown in FIG. 3) at a location between the first inner linear lamp 198 and the second intermediate linear lamp 196. It is contemplated that the second inner linear lamp 101 illuminates a structure (e.g., the radially inner inner surface portion 8 of the substrate 2) located within the interior 164 (shown in FIG. 3) of the chamber body 136 shifted toward the rotation axis 174. It is further contemplated that the second partially cylindrical surface 282 illuminates the structure using a second partially cylindrical surface illumination distribution 221 defined by the second partially cylindrical surface 282 of the reflector body 202. As would be understood by one of ordinary skill in the art in view of the present disclosure, this provides further compensation for variations in the reflected electromagnetic radiation from the planar surface 206 of the reflector body 202. The second partially cylindrical surface irradiance distribution 221 may further compensate for shielding of electromagnetic radiation reflected from the planar surface 206 by the multiple external ribs 162 (shown in FIG. 3), such as when the multiple external ribs 162 have different spacings on opposite longitudinal sides of the rotation axis 174 relative to one another.

[0074] The central linear lamps 103 are supported between the planar surface 206 of the reflector body 202 and the chamber body 136 (shown in FIG. 3 ) and are longitudinally distributed between the first inner linear lamp 198 and the second inner linear lamp 101. The central linear lamps 103 are further distributed on longitudinally opposing sides of the rotation axis 174 between the injection end 158 of the chamber body 136 (shown in FIG. 3 ) and the exhaust end 160 of the chamber body 136 (shown in FIG. 3 ). As shown in FIG. 11 , the planar surface 206 thereby irradiates structures within the interior 164 (shown in FIG. 3 ) (e.g., the radially inner interior surface portion 8 of the substrate 2) according to the interleaved irradiance distributions 223 associated with the plurality of central linear lamps 103 and according to the planar surface irradiance distributions 214 associated with each of the plurality of central linear lamps 103. As one of ordinary skill in the art would understand in light of this disclosure, this can limit variations in heat flux in a structure illuminated by electromagnetic radiation generated by the plurality of central linear lamps 103 and reflected by the planar surface 206 into the interior 164 of the chamber body 136. As one of ordinary skill in the art would also understand in light of this disclosure, variations at longitudinally opposed edges of the interleaved irradiance distribution 223 may be limited by the first partially cylindrical surface irradiance distribution 252 (shown in FIG. 7 ) and the second partially cylindrical surface irradiance distribution 221 (shown in FIG. 7 ).

[0075] 12, the ability to regulate temperature across the substrate within a range of 80% to 120% of the nominal power applied to the first intermediate linear lamps 194 and the second intermediate linear lamps 196 is shown for the chamber arrangement 104 (shown in FIG. 1) as compared to a chamber arrangement that does not include the reflector 200 (shown in FIG. 1) as illustrated using chart 300. As shown by traces 302 and 304, the temperature within the peripheral surface area of ​​the substrate may vary within a range of about 0.6 degrees Celsius relative to the interior surface area of ​​the substrate in the chamber arrangement that does not include the reflector 200 when the power applied to the first intermediate linear lamps 194 and the second intermediate linear lamps 196 is adjusted between about 80% to about 120% of the nominal power as indicated by arrow 306. In contrast, as shown by traces 308 and 310 with arrows 312, the temperature of the peripheral surface area of ​​substrate 2 at the bevel (shown in FIG. 1) is adjusted within a range of about 1.6 degrees Celsius relative to the interior surface area of ​​substrate 2 when the power applied to first intermediate linear lamp 194 and second intermediate linear lamp 196 is adjusted between about 80% and about 120% of the nominal power. Advantageously, the ability to adjust within these ranges provides the ability in chamber arrangement 104 to compensate for a greater amount of edge roll-up and edge roll-down than would otherwise be possible, such as in a deposition process in which a material layer is deposited on a patterned substrate having a higher emissivity than would be possible in a chamber arrangement that does not include reflector 200. For example, the amount of edge roll-up or edge roll-down in material layer 4 (shown in FIG. 1) covering a radially outer peripheral surface portion 5 (shown in FIG. 7) of substrate 2 (shown in FIG. 1) may be adjusted to less than half the amount of roll-up and roll-down deposited in a chamber arrangement that does not include reflector 200 (shown in FIG. 1).

[0076] Referring to Figure 13, a material layer deposition method 400 is shown. The method 400 includes positioning a substrate (e.g., substrate 2 (shown in Figure 1) at a distal focus 226 (shown in Figure 9) of an elliptical profile 222 (shown in Figure 9) defined by an ellipsoidal surface 210 (shown in Figure 4) of a reflector body 202 (shown in Figure 4)) in a semiconductor processing system having a reflector as described above at a distal focus 226 (shown in Figure 9) of an elliptical profile 222 (shown in Figure 9) defined by an ellipsoidal surface 210 (shown in Figure 4) of a reflector body 202 (shown in Figure 4) at a distal focus 226 (shown in Figure 9) of an elliptical profile 222 (shown in Figure 9) defined by an ellipsoidal surface of a reflector body as shown in box 410. The method 400 also includes heating the substrate using electromagnetic radiation emitted toward the substrate by one or more linear lamps supported at a proximal focus of the elliptical profile of the reflector body (e.g., proximal focus 224 (shown in Figure 9) of the elliptical profile defined by the ellipsoidal surface) as shown in box 520. Method 400 further includes further heating the substrate by reflecting the electromagnetic radiation emitted by the one or more linear lamps in a direction away from the substrate toward a distal focus using an ellipsoidal surface of the reflector body, as shown in box 430 and box 440, and depositing a silicon-containing material layer (e.g., material layer 4 (shown in FIG. 1)) on the substrate using an epitaxial deposition technique. As shown in box 442 and box 444, it is contemplated that the ellipsoidal surface uses the electromagnetic radiation reflected by the ellipsoidal surface with an ellipsoidal surface irradiance distribution to concentrate the heat flux at the distal focus of the ellipsoidal profile, and the heat flux at the distal focus of the ellipsoidal profile uses the power applied to the one or more linear lamps to increase the ability to adjust the substrate temperature at a radially outer peripheral surface portion of the substrate, thereby limiting the substrate-to-substrate variation in the silicon material deposited on the substrate using the epitaxial deposition technique.

[0077] In a particular embodiment, the reflector body may have a parabolic surface, such as parabolic surface 236 (shown in FIG. 4), and the method 400 may also include distributing the electromagnetic radiation reflected by the parabolic surface onto a structure located radially outward of the substrate, as shown in box 450. As shown in box 452, the parabolic surface may reflect the electromagnetic radiation incident on the parabolic surface according to a parabolic surface irradiance distribution, such as parabolic surface irradiance distribution 238 (shown in FIG. 7), and distribute the heat flux radially outward of the ellipsoidal surface of the reflector body. For example, it is contemplated that the electromagnetic radiation reflected by the parabolic surface may further limit variations in material layer deposition on the substrate, for example by conducting the heat distributed onto a surface portion of a substrate support that mounts the substrate radially outward of the substrate, using the parabolic surface irradiance distribution to a contact surface that mounts the substrate, as shown in box 454.

[0078] In a particular embodiment, the reflector body may include a partially cylindrical surface, such as the partially cylindrical surface 250 (shown in FIG. 4), as shown in box 460, which may distribute the electromagnetic radiation reflected by the cylindrical surface to an interior surface area of ​​the substrate covered by the planar surface of the reflector body. The partially cylindrical surface may reflect the electromagnetic radiation radially inward of the ellipsoidal surface of the reflector according to the partially cylindrical surface irradiance distribution, as shown in box 462, using, for example, the partially cylindrical surface irradiance distribution 252 (shown in FIG. 7). The partially cylindrical surface may further limit substrate-to-substrate variations in a layer of material deposited on the substrate, as shown in box 464, by compensating for heat flux variations associated with a planar surface irradiance distribution, such as the planar surface irradiance distribution 214 (shown in FIG. 7), associated with, for example, specular or regular reflection of the electromagnetic radiation reflected from the planar surface.

[0079] In certain embodiments, the reflector body may have a planar surface, such as planar surface 206 (shown in FIG. 4), and method 400 may further include heating a radially inner, interior surface portion of the substrate using electromagnetic radiation reflected from the planar surface of the reflector body, as further shown in box 440. The planar surface may reflect electromagnetic radiation incident on the planar surface according to a planar surface irradiance distribution, which may limit variations in the material layer deposited on the radially inner, interior surface portion of the substrate mounted on the substrate support.

[0080] Temperature variations between substrates may be controlled in a single-wafer cross-flow chamber arrangement by varying the power applied to lamps employed to heat substrates supported outside and mounted within the chamber arrangement. For example, in substrates that exhibit a relative center-to-edge temperature variation of the layer (e.g., patterned substrates exhibiting high emissivity relative to blanket substrates), the power applied to lamps covering the substrate periphery may be increased relative to the power applied to lamps covering the substrate interior surface area. Such edge power energizing techniques can, within the physical constraints of the lamp design and lamp power supply system, limit center-to-edge variations in the material layer deposited on the substrate that would otherwise be associated with the substrate center-to-edge temperature variation characteristics. However, for certain substrates, the substrate emissivity may be such that the substrate center-to-edge temperature variation characteristics exceed the ability of compensation through lamp power energization.

[0081] In the embodiments described herein, a reflector is provided that concentrates reflected electromagnetic radiation on the peripheral surface portion of the substrate, increasing the ability to adjust temperature compensation through lamp power adjustments that would otherwise be available at the peripheral surface portion of the substrate. In this regard, a reflector having an ellipsoidal surface covering the peripheral surface portion may be employed to concentrate reflected electromagnetic radiation on the peripheral surface portion of the substrate. Reflected electromagnetic radiation may be concentrated at a surface location covering a contact location between the substrate and a substrate support opposite the peripheral surface portion of the substrate, locally increasing the heat flux and attenuating otherwise specific heating of the substrate. In cases where the substrate exhibits a relatively low emissivity (e.g., a non-patterned blanket substrate), the concentration of reflected electromagnetic radiation at the peripheral surface portion increases the ability to compensate for roll-up (local thickening) of material layer thickness on the peripheral surface portion of the substrate relative to the interior surface portion of the substrate using lamp power adjustments. In cases where the substrate exhibits a relatively high emissivity (e.g., a patterned substrate), the concentration of reflected electromagnetic radiation at the peripheral surface portion of the substrate increases the ability to use lamp power adjustment to compensate for roll-down (local thickening) of the material layer thickness on the peripheral surface portion of the substrate relative to the interior surface portion of the substrate. In either process, the properties of the material layer covering the substrate peripheral surface portion may more closely resemble the properties in the material layer covering the interior portion of the substrate surface, improving the performance of semiconductor devices formed using the material layer covering the peripheral surface portion of the substrate.

[0082] In certain embodiments, the reflector described herein may have a parabolic surface. The parabolic surface may be radially outward of the substrate and may cover a portion of the substrate support radially outward on the bevel of the substrate to distribute the reflected electromagnetic radiation over the portion of the substrate support radially outward of the bevel of the substrate. This further increases the adjustability of the lamps covering the substrate peripheral surface portion using the lamps covering the substrate support radially outward of the substrate through conductive heating of the contact surface of the substrate support to which the substrate is attached using the electromagnetic radiation reflected by the parabolic surface. According to certain embodiments, the reflector described herein may have a partially cylindrical surface. The partially cylindrical surface may be radially inward of the ellipsoidal surface and may cover an inner surface portion of the substrate and may shift the reflected electromagnetic radiation reflected by the partially cylindrical surface in a direction opposite to the ellipsoidal surface, compensating for heat flux variations over the inner surface portion of the substrate associated with specular reflection of the electromagnetic radiation reflected by the planar surface of the reflector separated from the ellipsoidal surface by the partially cylindrical surface of the reflector.

[0083] Although the present disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that the present disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of the embodiments, and their obvious modifications, equivalents. In addition, while several variations of the embodiments of the present disclosure have been shown and described in detail, other modifications that are within the scope of the present disclosure will be readily apparent to those skilled in the art based on the present disclosure. It is also contemplated that various combinations or subcombinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the present disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined with or substituted for one another to form various modes of the embodiments of the present disclosure. It is therefore not intended that the scope of the present disclosure should be limited by the specific embodiments described above.

[0084] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein. [Explanation of symbols]

[0085] 2 Base material 4 material layers 6 Top side 10. Flow of Material Layer Precursor 12 External environment 14 Residual precursor and / or reaction product streams 100 Semiconductor Processing Systems 102 Precursor Delivery Arrangement 104 Chamber Arrangement 106 Exhaust Source 108 Controller 110 Precursor supply conduit 112 Exhaust duct 114 Radio Link 200 reflector 202 Reflector body 212 Slots 206 Planar surface 210 Ellipsoidal Surface 222 Elliptical Profile 226 Distal Focus

Claims

1. A reflector, A reflector body, A slotted surface; a planar surface opposite the slotted surface and separated from the slotted surface by a thickness of the reflector body; a reflector body having an ellipsoidal surface offset from the planar surface and opposite the slotted surface, the ellipsoidal surface separated from the slotted surface by the thickness of the reflector body; the ellipsoidal surface defines an elliptical profile orthogonal to the planar surface; the ellipsoidal surface spans the slotted surface of the reflector body; and A reflector, wherein the ellipsoidal surface uses electromagnetic radiation reflected by the ellipsoidal surface of the reflector body to concentrate heat flux at a distal focus of the ellipsoidal profile.

2. 2. The reflector of claim 1, wherein the ellipsoidal surface is a first ellipsoidal surface and the reflector body has a second ellipsoidal surface separated from the slotted surface by a thickness of the reflector body, the second ellipsoidal surface extending parallel to the first ellipsoidal surface and the second ellipsoidal surface separated from the first ellipsoidal surface by the planar surface.

3. The reflector of claim 1 , wherein the reflector body has a parabolic surface defining a parabolic profile perpendicular to the planar surface, the parabolic surface extending parallel to the ellipsoidal surface of the reflector body.

4. The reflector of claim 3 , wherein the ellipsoidal surface separates the parabolic surface of the reflector body from the planar surface of the reflector body.

5. The reflector of claim 3 , wherein the parabolic surface of the reflector body is separated from the ellipsoidal surface of the reflector body by the planar surface of the reflector body.

6. 2. The reflector of claim 1, wherein the reflector body has a partially cylindrical surface defining a partially circular profile, the partially circular profile being perpendicular to the planar surface, and the partially cylindrical surface extending parallel to the ellipsoidal surface of the reflector body.

7. The reflector of claim 6 , wherein the partially cylindrical surface of the reflector body separates the ellipsoidal surface of the reflector body from the planar surface of the reflector body.

8. 7. The reflector of claim 6, wherein the part-cylindrical surface of the reflector body is separated from the ellipsoidal surface by the planar surface of the reflector body.

9. 2. The reflector of claim 1, wherein the reflector body has an inner rib portion separating the planar surface of the reflector body from the ellipsoidal surface of the reflector body, the inner rib portion having a partially cylindrical surface defining a partially circular profile perpendicular to and facing the planar surface.

10. 2. The reflector of claim 1, wherein the reflector body has an intermediate rib portion separated from the planar surface by the ellipsoidal surface of the reflector body, the intermediate rib portion having a parabolic surface defining a parabolic profile, the parabolic profile being orthogonal to the planar surface of the reflector body.

11. 2. The reflector of claim 1, wherein the reflector body has an outer rib portion separated from the planar surface by the ellipsoidal surface of the reflector body, the outer rib portion having a parabolic surface and an edge surface, the parabolic surface defining a parabolic profile perpendicular to the planar surface, and the edge surface perpendicular to the planar surface.

12. The reflector of claim 1 , wherein the reflector body is formed from a bulk metallic material and further comprises a gold coating conformally deposited on both the planar and ellipsoidal surfaces of the reflector body.

13. 2. The reflector of claim 1, wherein the slotted surface defines a plurality of slots therein extending parallel to the ellipsoidal surface of the reflector body, the plurality of slots fluidly connecting the slotted surface with the planar surface and the ellipsoidal surface of the reflector body, and the thickness of the reflector body defines a coolant channel extending between the slotted surface and the ellipsoidal surface of the reflector body.

14. 2. The reflector body of claim 1, wherein the reflector body has a monolithic arrangement or a segmented arrangement comprising a first body segment and at least one second body segment, the planar surface being defined on the first body segment and the ellipsoidal surface being defined on the at least one second body segment, the second body segment abutting the first body segment at a joint across the reflector body.

15. 1. A semiconductor processing system comprising: a chamber body formed from a permeable material; a substrate support disposed within the chamber body; A reflector as claimed in claim 1 supported above the chamber body; a lamp array including a plurality of linear lamps supported between the reflector and the chamber body; a first linear lamp of the plurality of linear lamps extends about a proximal focus of the elliptical profile defined by the ellipsoidal surface of the reflector body; and a second linear lamp of the plurality of linear lamps separates the planar surface of the reflector body from the chamber body and is parallel to the first linear lamp of the plurality of linear lamps.

16. The semiconductor processing system of claim 15 , wherein a distal focus of said elliptical profile intersects a surface of a substrate mounted on said substrate support.

17. 16. The semiconductor processing system of claim 15, wherein the chamber body has a plurality of external ribs extending parallel to the ellipsoidal surface, and the first linear lamp of the plurality of linear lamps covers one of the plurality of external ribs.

18. 16. The semiconductor processing system of claim 15, wherein the chamber body has a plurality of external ribs extending parallel to the ellipsoidal surface, and the first linear lamp of the plurality of linear lamps is between two of the plurality of external ribs.

19. 16. The semiconductor processing system of claim 15, wherein the substrate support is supported for rotation within the chamber body for rotation about an axis of rotation, and the distal focal point is offset from the axis of rotation by about 135 millimeters to about 155 millimeters.

20. 1. A method for depositing a material layer, comprising:

1. A semiconductor processing system including reflection with a reflector body having a slotted surface, a planar surface opposite the slotted surface and separated from the slotted surface by a thickness of a reflector body, and an ellipsoidal surface offset from the planar surface and opposite the slotted surface, the ellipsoidal surface separated from the slotted surface by the thickness of the reflector body and defining an ellipsoidal profile orthogonal to the planar surface, the ellipsoidal surface spanning the slotted surface of the reflector body, Positioning a substrate at a distal focus of the elliptical profile defined by the ellipsoidal surface of the reflector body; heating the substrate using electromagnetic radiation emitted toward the substrate by a lamp supported at a proximal focus of the elliptical profile of the reflector body; further heating the substrate by reflecting electromagnetic radiation emitted in a direction away from the substrate toward the distal focal point using the ellipsoidal surface of the reflector body; depositing a layer of silicon-containing material on a substrate using an epitaxial deposition technique; the ellipsoidal surface concentrating a heat flux at the distal focus of the ellipsoidal profile using electromagnetic radiation reflected by the ellipsoidal surface; whereby the heat flux concentrated at the distal focus of the elliptical profile limits substrate-to-substrate variations in the silicon-containing material layer deposited on the substrate using the epitaxial deposition technique.

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