Machining device

Abstract

To provide a machining device that can accurately confirm a shape and a depth of the interior of a machining mark even if contrast of the interior of the machining mark becomes unclear in an image imaged by imaging means.SOLUTION: A machining device includes: holding means 7 which holds a wafer W; cutting means 8 which machines the wafer W held by the holding means 7; X-axis feeding means which feeds, for machining, the holding means 7 and the cutting means 8 relatively in an X-axis direction; Y-axis feeding means which feeds. for indexing. the holding means 7 and the cutting means 8 relatively in a Y-axis direction orthogonal to the X-axis direction; laser length measuring means 11 which detects a surface height of the wafer W held by the holding means 7; display means 14, and control means 20. The machining device causes the laser length measuring means 11 to be positioned at a machining mark made by the cutting means 8 in the wafer W held by the holding means 7, and to irradiate the machining mark with laser beam LB while causing the X-axis feeding means or the Y-axis feeding means to operate, and causes the display means 14 to display a shape and a depth of the machining mark.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a processing device for processing a workpiece. [Background technology]

[0002] Wafers, on whose surface multiple devices such as ICs and LSIs are formed, are divided along division lines. These are then separated into individual device chips using a dicing machine or laser processing machine. These are then used in electrical devices such as mobile phones and personal computers.

[0003] The dicing apparatus includes a holding means for holding a wafer, cutting means having a rotatable cutting blade for cutting the wafer held by the holding means, an X-axis feed means for relatively feeding the holding means and the cutting means in the X-axis direction for processing, a Y-axis feed means for relatively indexing and feeding the holding means and the processing means in the Y-axis direction perpendicular to the X-axis direction, an imaging means for imaging the wafer held by the holding means to image the area to be processed, and a control means, and can divide the wafer into individual device chips with high precision (see, for example, Patent Document 1).

[0004] In addition, the laser processing apparatus is configured in a manner similar to a dicing apparatus, except that the laser beam application means that applies a laser beam is replaced with the above-mentioned cutting means, and can divide the wafer into individual device chips with high precision (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 11-26402 [Patent Document 2] JP 2004-322168 A Summary of the Invention [Problem to be solved by the invention]

[0006] Incidentally, when performing processing to form grooves along the intended division lines using a dicing device, a relatively wide cutting blade may be used to first form the grooves along the intended division lines, and then a relatively narrow cutting blade may be positioned at the center of the groove already formed by the wide cutting blade to perform cutting. In this case, it is necessary to confirm whether the narrow cutting groove is accurately formed in the center of the wide cutting groove, but there is a problem that it is not possible to confirm whether the narrow cutting groove is accurately formed in the center of the wide cutting groove from the image information obtained by the imaging means used for alignment.

[0007] When the imaging means used for alignment is positioned at the cutting groove and an image is taken, the edge shape of the wide cutting groove can be confirmed, but due to the unclear contrast inside the groove, the narrow cutting groove formed inside the wide cutting groove becomes buried inside the wide cutting groove, making it difficult to confirm the shape and depth of the narrow cutting groove.

[0008] Such a problem is not limited to the above-mentioned case where a wide cut groove is formed by a cutting blade, and a narrow cut groove is formed in the center of the cut groove by a narrow cutting blade. For example, when a laser beam is irradiated to a low-k film (low dielectric constant insulating coating) laminated on a planned dividing line of a wafer to form a groove, and then a cutting blade is positioned in the center of the groove to cut the wafer. Furthermore, when a wafer is positioned in an annular frame having an opening for accommodating a wafer, a tape is arranged, and the wafer is held in the frame via the tape, the tape is fed so as to be half-cut by the cutting blade to form a half-cut groove in order to divide the wafer into individual device chips by the cutting blade, and the contrast between the half-cut groove and the tape is unclear, and it is necessary to check whether the half-cut groove corresponds to the planned dividing line and whether it is formed to an appropriate depth. This problem can be said to occur in any case where it is desired to accurately check the internal shape and depth of processing marks formed in a workpiece.

[0009] The present invention has been made in consideration of the above-mentioned facts, and its main technical object is to provide a processing device that can accurately confirm the internal shape and depth of a processing mark even when the contrast inside the processing mark is unclear in an image captured by an imaging means. [Means for solving the problem]

[0010] In order to solve the above-mentioned main technical problem, according to the present invention, there is provided a processing device for processing a workpiece, comprising: a holding means for holding the workpiece; a processing means for processing the workpiece held by the holding means; an X-axis feed means for relatively feeding the holding means and the processing means in the X-axis direction; a Y-axis feed means for relatively indexing and feeding the holding means and the processing means in the Y-axis direction perpendicular to the X-axis direction; a laser length measuring means for detecting the surface height of the workpiece held by the holding means; a display means; and a control means. The laser length measuring means is positioned at a processing mark made by the processing means on the workpiece held by the holding means, and a laser beam is irradiated thereto, and the X-axis feed means or the Y-axis feed means is operated to cause the display means to display the shape and depth of the processing mark.

[0011] When the repetition frequency of the laser beam emitted by the laser length measuring means is T [Hz] and the feed rate during processing in the X-axis direction is V [mm / sec], the control means can generate a two-dimensional image of the width and depth of the processing mark with a resolution of V / T. The control means may also generate a two-dimensional image for each indexing feed amount W, and combine a plurality of the two-dimensional images to generate a three-dimensional image. Furthermore, it is preferable that the processing means is a cutting means equipped with a rotatable cutting blade, and the processing mark is a cutting groove extending in the Y-axis direction provided on the workpiece. Effect of the Invention

[0012] The processing device of the present invention is a processing device that processes a workpiece, and is configured to include a holding means for holding the workpiece, a processing means for processing the workpiece held by the holding means, an X-axis feed means for relatively feeding the holding means and the processing means in the X-axis direction, a Y-axis feed means for relatively indexing and feeding the holding means and the processing means in the Y-axis direction perpendicular to the X-axis direction, a laser length measuring means for detecting the surface height of the workpiece held by the holding means, a display means, and a control means. The laser length measuring means is positioned at the processing mark made by the processing means on the workpiece held by the holding means and a laser beam is irradiated, and the X-axis feed means or the Y-axis feed means is operated to display the shape and depth of the processing mark on the display means. Therefore, even if the contrast inside the cut groove is unclear when imaged by the imaging means and the shape inside the cut groove cannot be clearly captured, the shape and depth of the cut groove can be accurately detected. [Brief description of the drawings]

[0013] [Figure 1] 1 is an overall perspective view of a dicing device according to an embodiment of the present invention; [Diagram 2] 2 is an enlarged perspective view showing a cutting means attached to the dicing apparatus shown in FIG. 1. [Diagram 3] 2 is a perspective view showing a mode in which the shape and depth of a cut groove are detected by a laser length measuring means attached to the dicing apparatus shown in FIG. 1. FIG. [Figure 4] (a) A conceptual diagram showing a two-dimensional image of a wide cutting groove detected by the laser measuring means shown in Figure 3, (b) A conceptual diagram showing a three-dimensional image generated by combining multiple two-dimensional images of multiple wide cutting grooves detected by the laser measuring means shown in Figure 3. [Diagram 5] (a) A conceptual diagram showing a two-dimensional image of a cutting groove including a narrow cutting groove detected by the laser measurement means shown in Figure 3, (b) A conceptual diagram showing a three-dimensional image generated by combining multiple two-dimensional images of a cutting groove including multiple narrow cutting grooves detected by the laser measurement means shown in Figure 3 (a). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a processing device configured based on the present invention will be described in detail with reference to the accompanying drawings.

[0015] 1 is a perspective view of a dicing device 1 shown as one embodiment of the processing device of the present invention. The dicing device 1 of this embodiment is configured to include at least a holding means 7 for holding a wafer W shown in the figure, a cutting means 8 arranged as a processing means for processing the wafer W held by the holding means 7, an X-axis feed means (not shown) for relatively feeding the holding means 7 and the cutting means 8 in the X-axis direction, a Y-axis feed means (not shown) for relatively indexing and feeding the holding means 7 and the cutting means 8 in the Y-axis direction perpendicular to the X-axis direction, a laser length measuring means 11 for detecting the surface height of the wafer W held by the holding means 8, a display means 14, and a control means 20.

[0016] The dicing apparatus 1 has a housing 2 having an approximately rectangular parallelepiped shape, and includes a cassette 3a placed on a cassette table 3 of the housing 2, a loading / unloading means 4 for loading an unprocessed wafer W supported on a frame F via a protective tape P from the cassette 3a to a temporary placement table 5, a transport means 6 having a rotating arm for transporting the wafer W loaded onto the temporary placement table 5 to a chuck table 7a of a holding means 7, an imaging means 10 for performing alignment by imaging the wafer W held on the above-mentioned chuck table 7a and detecting the area to be cut by the cutting means 8, and a cleaning and unloading means 13 for transporting the wafer W from the loading / unloading position where the chuck table 7a is positioned in Figure 1 to a cleaning device 12. The laser measuring means 11 is disposed adjacent to the imaging means 10 in the Y-axis direction, and is a means for irradiating a laser beam having a predetermined repetition frequency T (e.g., 5000 Hz) onto the wafer W held on the chuck table 7a, receiving the reflected light, and measuring the height of the surface Wa of the wafer W based on the phase difference between the irradiated laser beam and the reflected light.

[0017] The chuck table 7a constituting the holding means 7 is rotated by a rotation driving means not shown, and a plurality of clamps 7b (four in the illustrated embodiment) for fixing the frame F supporting the above-mentioned wafer W are arranged at equal intervals around the chuck table 7a.

[0018] In addition to the X-axis feed means and Y-axis feed means described above, the dicing device 1 is also provided with a Z-axis feed means for relatively cutting and feeding the holding means 7 and the cutting means 8 in the Z-axis direction (up and down direction) perpendicular to the X-axis and Y-axis directions (both are configured inside the housing 2 and are not shown). The X-axis feed means is a means for moving the holding means 7 in the X-axis direction, and the Y-axis feed means and Z-axis feed means are a means for moving the cutting means 8 in the Y-axis and Z-axis directions.

[0019] FIG. 2 shows an enlarged view of the main part of the cutting means 8 arranged in the dicing device 1 shown in FIG. 1. The cutting means 8 includes a spindle housing 82, a spindle 83 rotatably held by the spindle housing 82, a cutting blade 81 fixed to the tip of the spindle 83, and a blade cover 84 made of a plurality of members for protecting the cutting blade 81. A pair of cutting water supply nozzles 85 (the opposite side is not visible) are arranged in the blade cover 84 so as to sandwich the cutting blade 81 and supply cutting water introduced through the blade cover 84 toward the cutting position. A rotary drive source such as a motor (not shown) is accommodated in the other end side of the spindle housing 82, and the rotary drive source rotates the spindle 83 to rotate the cutting blade 81 in the direction indicated by the arrow R1. Although not shown, the imaging means 10 and the laser length measuring means 11 described above are arranged in the spindle housing 82 and are moved in the Y-axis direction and the Z-axis direction together with the cutting means 8.

[0020] The cutting blade 81 of this embodiment is configured to be detachable from the spindle 83, and in this embodiment, for example, it can be selected from a blade in which diamond abrasive grains having a diameter of 50 mm and a thickness of 50 μm are fixed with a resin bond, or an electroformed blade in which diamond abrasive grains having a diameter of 50 mm and a thickness of 20 μm are fixed with nickel plating, and when performing the cutting process described below, a blade with a thickness of 50 μm and diamond abrasive grains suitable for cutting the layer on the surface Wa of the wafer W on which the device D is formed is first selected as the cutting blade 81. Note that the material and dimensions of the cutting blade 81 selected in the present invention are not limited to these.

[0021] The control means 20 is configured by a computer and includes a central processing unit (CPU) that performs calculations according to a control program, a read-only memory (ROM) that stores the control program, etc., a readable / writable random access memory (RAM) that temporarily stores the detected values, the calculation results, etc., an input interface, and an output interface (details are omitted from the drawings). The control means 20 is connected to at least the above-mentioned X-axis feed means, Y-axis feed means, Z-axis feed means, cutting means 8, the rotary drive means for the chuck table 7a, the imaging means 10, the laser length measuring means 11, etc., and is operated by a plurality of control programs stored in the control means 20. Note that, in FIG. 1, the control means 20 is shown outside the housing 2 for convenience of explanation, but is actually disposed inside the housing 2.

[0022] The dicing device 1 of this embodiment has roughly the configuration described above, and the functions, actions and effects of this dicing device 1 will be described with reference to FIGS. 3 to 5 in addition to FIGS.

[0023] The wafer W, which is the workpiece of the above-mentioned dicing apparatus 1, is, for example, a silicon wafer having a thickness of 200 μm and a diameter of 300 mm, and as shown in FIG. 2, a plurality of devices D are formed on the surface Wa, partitioned by intended division lines L. The wafer W is positioned in the center of a frame F having an opening Fa capable of accommodating the wafer W, and is supported by the annular frame F via a protective tape P.

[0024] A plurality of the above-mentioned wafers W are accommodated in a cassette 3a and are carried into the dicing device 1. When processing the wafer W, the wafer W is carried out from the cassette 3a onto the temporary placement table 5 by the above-mentioned carry-in / out means 4 and aligned, the frame F is sucked by the transport means 6, and the wafer W is transported and placed on the chuck table 7a, and negative pressure is generated on the above-mentioned chuck table 7a to suck the wafer W, and the frame F is gripped by the clamps 7b to hold the wafer W.

[0025] Once the wafer W is held on the chuck table 7a as described above, the X-axis feed means is operated to position the wafer W directly under the imaging means 10, the surface Wa of the wafer W is imaged, the dividing lines L are aligned in the X-axis direction, and the positions of the dividing lines L to be processed are detected. Then, the Y-axis feed means is operated to align the predetermined dividing lines L to be processed of the wafer W with the cutting blade 81 of the cutting means 8.

[0026] Next, the Z-axis feed means is operated to position the cutting blade 81 rotated at high speed in the direction indicated by the arrow R1 on the division line L aligned in the X-axis direction as shown in Fig. 2, and cut a predetermined depth (e.g., 85 μm) in the Z-axis direction, while the X-axis feed means is operated to feed the wafer W in the X-axis direction to form a cut groove 100. Furthermore, the Y-axis feed means is operated to index and feed the cutting blade 81 of the cutting means 8 in the Y-axis direction according to the interval (e.g., 5 mm) between the division line L on which the cut groove 100 is formed and the unprocessed division line L adjacent in the Y-axis direction on which the cut groove 100 is not formed, and the cutting blade 81 is positioned on the unprocessed division line L, and cutting is performed to form the cut groove 100 in the same manner as above. By repeating these steps, the cut grooves 100 are formed along all the division lines L along the X-axis direction. Next, the chuck table 7a holding the wafer W is rotated 90 degrees to align the direction perpendicular to the direction in which the cut grooves 100 were previously formed with the X-axis direction. Then, the above-mentioned cutting process is performed on all the planned dividing lines L newly aligned with the X-axis direction, thereby forming the cut grooves 100 along all the planned dividing lines L formed on the wafer W, as shown in the lower right side of FIG.

[0027] As described above, once the cut groove 100 has been formed along the intended dividing line L of the wafer W, the surface height of the cut groove 100, i.e., its shape and depth, can be detected using the above-described laser length measuring means 11.

[0028] In order to detect the shape and depth of the cut groove 100, which is a machining mark, the X-axis feed means is operated to move the wafer W on which the cut groove 100 is formed to the side of the laser length measurement means 11 as shown in FIG. 3, and the laser length measurement means 11 is positioned on the target groove 100' (the cut groove 100 formed in the area surrounded by the dashed line in the figure) for detecting the shape and depth of the machining mark. In this embodiment, the target groove 100' is selected from the cut grooves 100 extending in the Y-axis direction. The detection point is set corresponding to the device D on the wafer W, and is set, for example, to the side of the device D on the front side in the figure along the target groove 100'. Next, a detection laser beam LB is irradiated from the laser length measurement means 11, and the above-mentioned X-axis feed means is operated to receive reflected light, for example, in a range of 100 μm, so that the laser beam LB straddles the target groove 100' of the wafer W, and the shape and depth of the target groove 100' are detected.

[0029] The repetition frequency T of the laser beam LB irradiated from the laser length measuring means 11 is 5000 Hz as described above, and the feed speed V when the X-axis feed means processes and feeds in the X-axis direction is set to 10 mm / sec. Therefore, the detection resolution is V / T=2 μm, and the control means 20 can detect the surface height at 50 points in a detection range of 100 μm. Then, from the detection data at the 50 points in the detection range described above, a two-dimensional image G1 showing the shape and depth of the target groove 100' is generated as shown in FIG. 4(a). In FIG. 4(a), the length dimension in the X-axis direction is shown on the X-axis, and the length dimension in the Z-axis direction is shown on the Z-axis. The two-dimensional image G1 showing the shape and depth of the target groove 100' is generated with the height of the surface Wa of the wafer W as the reference (0 μm), and is displayed on the display means 14 via the control means 20. As shown in the figure, the groove width of the target groove 100' is 50 μm, and the depth is 85 μm.

[0030] As described above, once the two-dimensional image G1 has been generated, the Y-axis feed means is operated to index and feed the laser beam 11 together with the cutting means 8 in the direction indicated by the arrow R2 (Y-axis direction) at a predetermined indexing feed amount W, for example, at intervals of 100 μm, to move the position where the shape and depth are detected by the laser length measuring means 11 in the target groove 100'. Next, in the same procedure as that for detecting the two-dimensional image G1 described above, the laser beam LB is irradiated in a range of 100 μm so as to straddle the target groove 100' of the wafer W, and the reflected light is received, the height of the surface Wa of the wafer W is detected, and a two-dimensional image G2 is generated. By repeating such a procedure, a plurality of two-dimensional images can be generated for each predetermined indexing feed amount W. For example, as shown in FIG. 4(b), a three-dimensional image G0 based on the dimensions in the X-axis, Y-axis, and Z-axis directions can be generated by combining a plurality of two-dimensional images G1 to G5, and displayed on the display means 14.

[0031] As described above, the shape and depth of the target groove 100' formed in the wafer W are detected by the laser measurement means 11, and two-dimensional images G1 to G5 and a three-dimensional image G0 are generated and displayed on the display means 14, thereby making it possible to check the quality of the cut groove 100 formed by the cutting blade 81. For example, if the cut groove 100 is not generated with the desired dimensions due to chipping or deterioration over time of the cutting blade 81, it becomes possible to immediately take action.

[0032] As described above, when the cutting groove 100 is formed by the cutting blade 81 with a cutting edge thickness of 50 μm and its shape and depth are detected by the laser length measuring means 11, the wafer W is transported from the chuck table 7a to the cleaning device 12 by the above-mentioned cleaning and transporting means 13, where it is subjected to cleaning and drying treatment, and then stored in a predetermined position in the cassette 3 by the transporting means 6 and the carrying-in / out means 4. Then, the above-mentioned processing is performed on all the wafers W stored in the cassette 3. After that, in the dicing device 1 of this embodiment, the cutting blade with a cutting edge of 50 μm thickness attached to the cutting means 8 is replaced with an electroformed blade of 20 μm thickness to which diamond abrasive grains suitable for cutting silicon wafers are fixed by nickel plating.

[0033] As described above, after replacing the cutting blade 81 with the cutting blade having the above-mentioned 20 μm thick cutting edge, a procedure similar to the above-mentioned cutting process is performed to form a narrow cut groove along the cut groove 100. The depth of the narrow cut groove is set to 220 μm, which is the depth at which the protective tape P is half-cut from the front surface Wa of the wafer W, and the cutting process is performed so that the narrow cut groove is formed in the center of the previously formed cut groove 100. The procedure for forming the narrow cut groove is substantially similar to the procedure for forming the above-mentioned wide cut groove 100, so detailed procedures will be omitted.

[0034] As described above, when a narrow cut groove is formed along the wide cut groove 100, the X-axis feed means is operated to move the wafer W toward the laser length measuring means 11 in the same procedure as that for detecting the shape and depth of the wide cut groove 100 described above, and the laser length measuring means 11 is positioned at a detection point on the target groove selected from the cut groove 100 extending in the Y-axis direction. The target groove may be, for example, the target groove 100' described above. The detection point is set corresponding to the device D on the wafer W, and is set, for example, to the side of the device D on the front side in the figure along the target groove 100'. Next, the X-axis feed means is operated so that the laser beam LB irradiated from the laser length measuring means 11 crosses the target groove 100' in which the narrow cut groove is formed, and the height of the surface Wa of the wafer W, i.e., the shape and depth of the target groove 100', is detected.

[0035] From the detection data at 50 points detected in the above-mentioned detection range, a two-dimensional image H1 of the shape and depth of the target groove 100' including the narrow cut groove 110 is generated as shown in Fig. 5(a). In Fig. 5(a), the length dimension in the X-axis direction is shown on the X-axis, and the length dimension in the Z-axis direction is shown on the Z-axis, and the two-dimensional image H1 generated in this manner is displayed on the display means 14 via the control means 20. As shown in the figure, it is confirmed that the groove width of the target groove 100' is 50 μm, the groove width of the narrow cut groove 110 is 20 μm, and the depth is 220 μm, and further, it is confirmed that the narrow cut groove 110 is formed in the center of the wide cut groove 100.

[0036] As described above, once the two-dimensional image H1 has been generated, the Y-axis feed means is operated to index and feed the cutting means 8 in the Y-axis direction at a predetermined index feed amount W, for example, at intervals of 100 μm, to move the detection position. Next, in the same procedure as that for detecting the two-dimensional image H1 described above, the laser beam LB is irradiated over a range of 100 μm so as to straddle the target groove 100' of the wafer W, and the reflected light is received to detect the height of the surface Wa of the wafer W, i.e., the shape and depth of the target groove 100', and a two-dimensional image H2 is generated. By repeating such a procedure, a plurality of two-dimensional images H1 to H5 can be generated for each predetermined index feed amount W, and as shown in FIG. 5(b), a three-dimensional image H0 based on the dimensions in the X-axis, Y-axis, and Z-axis directions can be displayed on the display means 14.

[0037] According to the above-described embodiment, even if the contrast inside the wide cutting groove 100 is unclear when imaged by the imaging means 10 and the narrow cutting groove 110 formed inside the wide cutting groove 100 cannot be clearly captured, by using the above-described laser length measuring means 11, it is possible to confirm whether or not the narrow cutting groove 110 is formed in the center of the wide cutting groove 100.

[0038] Also, although not shown in the figures, when a wafer having a low-k film laminated along the planned dividing line is processed, the low-k film laminated along the planned dividing line of the wafer is removed by laser processing to form a groove, and then a cutting blade narrower than the width of the groove is positioned at the center of the groove to cut the wafer, the shape and depth of the groove can be displayed on the display means 14 by using the above-mentioned laser length measuring means 11, and it can be confirmed whether the groove has been formed with the desired shape and depth.

[0039] Furthermore, although not shown in the figure, when the wafer is positioned in a ring-shaped frame having an opening for accommodating the wafer, a tape is arranged, and the wafer is cut with a cutting blade while being supported by the frame via the tape to divide the wafer into individual device chips, the tape is fed so as to be half-cut with the cutting blade to form half-cut grooves. Even if the contrast between the half-cut grooves and the tape is unclear, by using the above-mentioned laser length measuring means 11, it is possible to confirm whether the half-cut grooves are formed in the desired shape and depth along the intended division line.

[0040] In the above embodiment, when detecting the shape and depth of the cut groove 100 using the laser length measuring means 11, the target groove 100' is selected from the cut grooves 100 extending in the Y-axis direction, and the X-axis feed means is operated to detect the shape and depth of the cut groove 100, but the present invention is not limited to this. For example, the target groove can be selected from the cut grooves 100 extending in the X-axis direction, the Y-axis feed means is operated, and the laser beam LB is irradiated from the laser length measuring means 11 to detect the shape and depth of the cut groove 100. However, when operating the Y-axis feed means, the laser beam LB irradiated from the laser length measuring means 11 may be blurred due to vibrations of the drive mechanism that operates the Y-axis feed means, so it is preferable to select the target groove 100' from the cut grooves 100 extending in the Y-axis direction. [Explanation of symbols]

[0041] 1: Dicing equipment 2: Housing 3: Cassette 4: Carrying in / out means 5: Temporary table 6: Means of transportation 7: Holding means 7a: Chuck table 7b: Clamp 8:Cutting means 81: Cutting blade 82: Spindle housing 83: Spindle 84: Blade cover 85: Cutting water supply nozzle 10: Imaging means 11: Laser length measuring means 12: Cleaning equipment 13: Cleaning and transport means 14:Display means 20: Control means 100: Cutting groove 110: Cutting groove F: Frame P: Protective tape W: Wafer

Claims

1. A processing device that processes a workpiece, The apparatus includes a holding means for holding a workpiece, a processing means for processing the workpiece held by the holding means, an X-axis feed means for relatively feeding the holding means and the processing means in the X-axis direction, a Y-axis feed means for relatively indexing and feeding the holding means and the processing means in the Y-axis direction perpendicular to the X-axis direction, a laser length measuring means for detecting the surface height of the workpiece held by the holding means, a display means, and a control means, A processing device which positions the laser measuring means at the machining mark made by the processing means on the workpiece held by the holding means, irradiates a laser beam, and operates the X-axis feed means or the Y-axis feed means to display the shape and depth of the machining mark on the display means.

2. When the repetition frequency of the laser beam emitted by the laser length measuring means is T [Hz] and the feed speed when processing and feeding in the X-axis direction is V [mm / sec], The control means 2. The processing device according to claim 1, wherein a two-dimensional image of width and depth of processed marks is generated with a resolution of V / T.

3. 3. The processing device according to claim 2, wherein the control means generates a two-dimensional image for each index feed amount W and combines a plurality of the two-dimensional images to generate a three-dimensional image.

4. 4. The processing apparatus according to claim 2, wherein the processing means is a cutting means having a rotatable cutting blade, and the processing mark is a cutting groove extending in the Y-axis direction provided on the workpiece.

Images