Semiconductor device

Abstract

To improve transmission characteristics and reduce the increase in mounting area.SOLUTION: A semiconductor device has a substrate, a first transistor and a second transistor, each of which is provided above the first surface of the substrate and whose sources are connected in common, a light emitting element provided above the first surface of the substrate and having an anode electrode and a cathode electrode, a light receiving element provided above the first surface of the substrate and turns the first transistor and the second transistor on or off according to the light emitting state of the light emitting element, a first filter element provided above the first surface of the substrate and connected to the anode electrode of the light emitting element, and a second filter element provided above the first surface of the substrate and connected to the cathode electrode of the light emitting element.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The embodiments relate to a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art A photorelay device including a light emitting element and a light receiving element is known as a semiconductor device. The photorelay device is a contactless relay and is used for transmitting AC signals and DC signals. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-164154 A [Patent Document 2] JP 2006-351608 A [Patent Document 3] JP 2004-128143 A Summary of the Invention [Problem to be solved by the invention]

[0004] Improves transmission characteristics while suppressing an increase in mounting area. [Means for solving the problem]

[0005] The semiconductor device of the embodiment comprises a substrate, a first transistor and a second transistor each provided above a first surface of the substrate and having a common source, a light-emitting element provided above the first surface of the substrate and having an anode electrode and a cathode electrode, a light-receiving element provided above the first surface of the substrate and turning the first transistor and the second transistor on or off depending on the light-emitting state of the light-emitting element, a first filter element provided above the first surface of the substrate and connected to the anode electrode of the light-emitting element, and a second filter element provided above the first surface of the substrate and connected to the cathode electrode of the light-emitting element. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a circuit diagram illustrating an example of a circuit configuration of a semiconductor device according to an embodiment. [Diagram 2] 1 is a perspective view showing an example of a structure of a semiconductor device according to an embodiment; [Diagram 3] 1 is a plan view showing an example of a planar structure of a semiconductor device according to an embodiment; [Figure 4] FIG. 13 is a perspective view showing an example of the structure of a semiconductor device according to a first modified example. [Diagram 5] FIG. 13 is a perspective view showing an example of the structure of a semiconductor device according to a second modified example. [Figure 6] FIG. 11 is a plan view showing an example of a planar structure of a semiconductor device according to a second modified example. [Figure 7] FIG. 13 is a plan view showing an example of a planar structure of a semiconductor device according to a third modified example. [Figure 8] FIG. 13 is a perspective view showing an example of the structure of a semiconductor device according to a fourth modified example. [Figure 9] FIG. 13 is a plan view showing an example of a planar structure of a semiconductor device according to a fourth modified example. [Figure 10] FIG. 13 is a plan view showing an example of a planar structure of a semiconductor device according to another example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, an embodiment will be described with reference to the drawings. In the following description, components having the same functions and configurations are given the same reference numerals. Furthermore, the dimensions and ratios of the drawings are not necessarily the same as those in reality.

[0008] 1. Embodiment A semiconductor device according to an embodiment will be described.

[0009] The semiconductor device according to the embodiment is, for example, a photorelay device for transmitting AC signals or DC signals. The semiconductor device according to the embodiment is, for example, a package of electronic components. In the following description, the AC signals and DC signals are also simply referred to as signals.

[0010] An example of a circuit configuration of the semiconductor device according to the embodiment will be described with reference to Fig. 1. Fig. 1 is a circuit diagram for explaining an example of a circuit configuration of the semiconductor device according to the embodiment.

[0011] The semiconductor device 1 includes terminals 80, 81, 82a, and 82b. A voltage for driving the semiconductor device 1 is supplied to the terminals 80 and 81. While the semiconductor device 1 is driven, the semiconductor device 1 can transmit a signal via the terminals 82a and 82b.

[0012] The semiconductor device 1 further includes MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) 20a and 20b, a light receiving element 40, a light emitting element 60, and ferrite beads (filter elements) FB1 and FB2. The MOSFETs 20a and 20b are, for example, enhancement-type N-channel MOSFETs. The light receiving element 40 is, for example, a sensor including a PDA (Photo Diode Array) or a phototransistor. In the following, a case where the light receiving element 40 includes a PDA will be described. The light emitting element 60 is, for example, an LED (Light Emitting Diode).

[0013] The light-emitting element 60 is connected to terminals 80 and 81 via ferrite beads FB1 and FB2, respectively. More specifically, an anode electrode of the light-emitting element 60 is connected to the terminal 80 via, for example, ferrite bead FB1. A cathode electrode of the light-emitting element 60 is connected to the terminal 81 via, for example, ferrite bead FB2. The light-emitting element 60 is driven by power supplied to the terminals 80 and 81. This causes the light-emitting state of the light-emitting element 60 to be turned on (lighted) or off (unlighted).

[0014] The light receiving element 40 includes, for example, a plurality of photodiodes 40a connected in series, and a control circuit 40b. The number of the photodiodes 40a is, for example, several to several tens. Both ends of the plurality of serially connected photodiodes 40a are connected to the control circuit 40b. The control circuit 40b turns on the MOSFETs 20a and 20b using the photoelectromotive force generated by the plurality of photodiodes 40a.

[0015] The gate of MOSFET 20a and the gate of MOSFET 20b are commonly connected to an anode electrode of light receiving element 40. The source of MOSFET 20a and the source of MOSFET 20b are commonly connected to a cathode electrode of light receiving element 40. The drain of MOSFET 20a is connected to terminal 82a. The drain of MOSFET 20b is connected to terminal 82b.

[0016] In the circuit configuration of the semiconductor device 1 as described above, when the light-emitting element 60 changes from an off state to an on state, light is emitted from the light-emitting element 60. The light-receiving element 40 changes the MOSFETs 20a and 20b from an off state to an on state using a voltage generated by the photovoltaic effect caused by the light of the light-emitting element 60. This electrically connects the terminals 82a and 82b. In this manner, the semiconductor device 1 transmits a signal supplied to one of the terminals 82a and 82b to the other of the terminals 82a and 82b via the MOSFETs 20a and 20b.

[0017] Furthermore, when the light emitting element 60 is switched from an on state to an off state, the light emission from the light emitting element 60 is stopped. As a result, the MOSFETs 20a and 20b are switched from an on state to an off state. In this manner, the semiconductor device 1 electrically insulates the terminals 82a and 82b from each other.

[0018] Next, the structure of the semiconductor device 1 according to the embodiment will be described with reference to FIG. 2. FIG. 2 is a perspective view showing an example of the structure of the semiconductor device according to the embodiment. In the following description, the Z direction corresponds to a direction perpendicular to the surface of the substrate on which the semiconductor device 1 is formed. The X direction is a direction parallel to the surface of the substrate. The Y direction is a direction parallel to the surface of the substrate and perpendicular to the X direction. In FIG. 2, wiring is omitted to make the drawing easier to understand. The wiring will be described later.

[0019] The semiconductor device 1 further includes a substrate B, electrodes (pads) 10a, 10b, 70, and 71, a support 30, an adhesive layer 50, and a sealing material S. In the following description, the side of the substrate B and the MOSFET 20a on which the MOSFET 20a is provided is referred to as the upper side in the Z direction. Also, the side of the substrate B and the MOSFET 20a on which the substrate B is provided is referred to as the lower side in the Z direction.

[0020] The substrate B is, for example, a circuit board using BT (bismaleimide triazine) resin, or a flexible substrate (FPC: Flexible Printed Circuits) using polyimide.

[0021] The electrodes 10a, 10b, 70, and 71 are provided on the upper surface of the substrate B. The electrodes 10a, 10b, 70, and 71 are, for example, metal foils containing copper. The electrodes 10a, 10b, 70, and 71 are provided, for example, so that the electrodes 10a and 10b and the electrodes 70 and 71 are aligned in the Y direction. In the following description, the side of the electrodes 10a, 10b, 70, and 71 on which the electrodes 10a and 10b are provided is referred to as one end side along the Y direction. In addition, the side of the electrodes 10a, 10b, 70, and 71 on which the electrodes 70 and 71 are provided is referred to as the other end side along the Y direction. In addition, the electrodes 10a and 10b are provided, for example, so as to be aligned in the X direction. In the following description, the side of the electrodes 10a and 10b on which the electrode 10a is provided is referred to as one end side along the X direction. Of the electrodes 10a and 10b, the side on which the electrode 10b is provided is referred to as the other end side along the X direction. The electrodes 70 and 71 are provided, for example, to be aligned in the X direction. The electrode 70 is provided, for example, on one end side along the X direction of the electrode 71. Note that the electrodes 70 and 71 are preferably provided at positions close to each other in the X direction.

[0022] The MOSFET 20a includes electrodes 21a, 22a, and an electrode arranged on the lower part of the MOSFET 20a (not shown in FIG. 2). The electrodes 21a and 22a are arranged on the upper surface of the MOSFET 20a. The electrode arranged on the lower part of the MOSFET 20a contacts the electrode 10a on the lower surface of the MOSFET 20a, for example, via a conductive paste. The electrode arranged on the lower part of the MOSFET 20a may have a size equivalent to that of the lower surface of the MOSFET 20a. The electrode 21a functions as a source electrode of the MOSFET 20a. The electrode 22a functions as a gate electrode of the MOSFET 20a. The electrode arranged on the lower part of the MOSFET 20a functions as a drain electrode of the MOSFET 20a.

[0023] The MOSFET 20b includes electrodes 21b, 22b, and an electrode arranged on the lower part of the MOSFET 20b (not shown in FIG. 2). The electrodes 21b and 22b are arranged on the upper surface of the MOSFET 20b. The electrode arranged on the lower part of the MOSFET 20b contacts the electrode 10b on the lower surface of the MOSFET 20b via a conductive paste or the like. The electrode arranged on the lower part of the MOSFET 20b may have a size equivalent to that of the lower surface of the MOSFET 20b, for example. The electrode 21b functions as a source electrode of the MOSFET 20b. The electrode 22b functions as a gate electrode of the MOSFET 20b. The electrode arranged on the lower part of the MOSFET 20b functions as a drain electrode of the MOSFET 20b.

[0024] With the above-described arrangement of the MOSFETs 20a and 20b, the MOSFETs 20a and 20b are arranged adjacent to each other in the X direction, for example.

[0025] The ferrite bead FB1 includes, for example, electrodes (pads) FP11 and FP12. The electrode FP11 is disposed on the upper surface of the ferrite bead FB1. The electrode FP12 is in contact with the electrode 70 on the lower surface of the ferrite bead FB1 via a conductive paste or the like. The ferrite bead FB1 is provided, for example, on the other end of the electrode 70 along the X direction.

[0026] The ferrite bead FB2 includes, for example, electrodes (pads) FP21 and FP22. The electrode FP21 is disposed on the upper surface of the ferrite bead FB2. The electrode FP22 is in contact with the electrode 71 on the lower surface of the ferrite bead FB2 via a conductive paste or the like. The ferrite bead FB2 is provided, for example, on one end side of the electrode 71 along the X direction.

[0027] In the above-described configuration of the ferrite beads FB1 and FB2, the ferrite beads FB1 and FB2 are arranged adjacent to each other in the X direction. Furthermore, by disposing the electrodes 70 and 71 as described above, the ferrite beads FB1 and FB2 can be provided at positions close to each other in the X direction.

[0028] In the embodiment, the ferrite beads FB1 and FB2 are provided as different chips.

[0029] The support base 30 is provided on the upper surface of the substrate B. The support base 30 is provided, for example, so as to be sandwiched in the Y direction between the electrodes 10a and 10b and the electrodes 70 and 71. The support base 30 has a plate shape extending in the X direction and the Y direction. The support base 30 supports the light receiving element 40 and the light emitting element 60. The support base 30 may be, for example, either a conductor or an insulator. Furthermore, the support base 30 may be, for example, a composite material of a conductor and an insulator.

[0030] The light receiving element 40 is provided so as to be in contact with the upper surface of the support base 30. Furthermore, the light receiving element 40 is disposed so as to have a light receiving surface on the upper surface of the light receiving element 40, for example.

[0031] The light receiving element 40 includes electrodes 41, 42, 43, and 44. The electrodes 41 to 44 are disposed on the upper surface of the light receiving element 40. Although not shown in FIG. 2, the electrodes 41 and 43 are electrically connected, for example, within the light receiving element 40. Although not shown in FIG. 2, the electrodes 42 and 44 are electrically connected, for example, within the light receiving element 40. The electrodes 41 and 43 function, for example, as a cathode electrode of the light receiving element 40. The electrodes 42 and 44 function, for example, as an anode electrode of the light receiving element 40.

[0032] The light emitting element 60 is provided above the light receiving element 40. The light emitting element 60 is disposed so as to have a light irradiation surface on the lower surface of the light emitting element 60. The irradiation surface of the light emitting element 60 faces the light receiving surface of the light receiving element 40.

[0033] The light-emitting element 60 includes electrodes 61 and 62. The electrodes 61 and 62 are disposed on the upper surface of the light-emitting element 60. The electrode 61 functions as, for example, an anode electrode of the light-emitting element 60. The electrode 62 functions as, for example, a cathode electrode of the light-emitting element 60.

[0034] An adhesive layer 50 is provided between the light emitting element 60 and the light receiving element 40, in contact with each of the light emitting element 60 and the light receiving element 40. The adhesive layer 50 is, for example, an insulating material that is transparent to the light emitted from the light emitting element 60.

[0035] Each of the terminals 80, 81, 82a, and 82b is provided such that the upper surface of the terminal contacts the lower surface of the substrate B, for example.

[0036] A signal is transmitted between the terminals 80 and 81, for example, by devices and circuits (not shown). Although not shown in Fig. 2, the terminal 80 is electrically connected to the electrode 70, for example, through a conductor (via) that penetrates the substrate B. In addition, although not shown in Fig. 2, the terminal 81 is electrically connected to the electrode 71, for example, through a conductor (via) that penetrates the substrate B, similarly to the terminal 80.

[0037] The terminals 82a and 82b are each connected to a circuit or the like provided outside the semiconductor device 1. Although not shown in Fig. 2, the terminal 82a is electrically connected to an electrode disposed under the MOSFET 20a, for example, through a conductor (via) penetrating the substrate B, the electrode 10a, and a conductive paste. Also, although not shown in Fig. 2, the terminal 82b is electrically connected to an electrode disposed under the MOSFET 20b, for example, through a conductor (via) penetrating the substrate B, the electrode 10b, and a conductive paste, similarly to the terminal 82a.

[0038] The sealing material S is provided so as to cover the MOSFETs 20a and 20b, the support 30, the light receiving element 40, the light emitting element 60, the ferrite beads FB1 and FB2, and the electrodes 10a, 10b, 70, and 71. The sealing material S may include, for example, a non-light-transmitting material.

[0039] In the configuration of the semiconductor device 1 as described above, the electrodes 10a, 10b, 70, and 71, the MOSFETs 20a and 20b, and the ferrite beads FB1 and FB2 may be disposed symmetrically with respect to the YZ plane, for example.

[0040] The internal wiring of the semiconductor device 1 will be described with reference to Fig. 3. Fig. 3 is a plan view showing an example of the planar structure of the semiconductor device according to the embodiment.

[0041] The semiconductor device 1 further includes wirings W1, W2, W3, W4, W5, W6, and W7.

[0042] The wirings W1 to W7 are wires formed by, for example, wire bonding, and are made of a conductive material.

[0043] The wiring W1 electrically connects the electrode FP11 and the electrode 61. The wiring W2 electrically connects the electrode FP21 and the electrode 62. The wiring W3 electrically connects the electrode 41 and the electrode 21a. The wiring W4 electrically connects the electrode 42 and the electrode 22a. The wiring W5 electrically connects the electrode 43 and the electrode 21b. The wiring W6 electrically connects the electrode 44 and the electrode 22b. The wiring W7 electrically connects the electrodes 21a and 21b. Note that, although FIG. 3 shows an example in which the electrodes 21a and 21b are connected by two wirings W7, this is not limiting. The electrodes 21a and 21b may be connected by one or more wirings W7.

[0044] In the above configuration, the wires W1 and W2 are provided so as to be approximately parallel to the Y direction. Furthermore, due to the above-mentioned arrangement of the ferrite beads FB1 and FB2, the wires W1 and W2 are arranged adjacent to each other in the X direction.

[0045] The wirings W1 and W2 are preferably provided at positions close to each other in the X direction. For example, the wiring W1 contacts the other end of the electrode FP11 along the X direction. The wiring W2 contacts, for example, one end of the electrode FP21 along the X direction. With this configuration, the wirings W1 and W2 can be provided at positions close to each other in the X direction.

[0046] Moreover, the wiring W7 is provided so as to be substantially parallel to the X direction.

[0047] By arranging the wirings W1, W2, and W7 as described above, the wirings W1 and W2 and the wiring W7 are arranged so as to be perpendicular to each other when viewed from above.

[0048] The wirings W1 to W7 are covered with a sealing material S.

[0049] Moreover, the wirings W1 to W7 may be disposed, for example, symmetrically with respect to the YZ plane.

[0050] According to the embodiment, it is possible to improve the transmission characteristics and suppress an increase in the mounting area. Hereinafter, the improvement of the transmission characteristics and the suppression of an increase in the mounting area by the semiconductor device 1 according to the embodiment will be described.

[0051] The semiconductor device 1 according to the embodiment includes MOSFETs 20a and 20b, a light-emitting element 60, a light-receiving element 40, a ferrite bead FB1 connected to an electrode 61 of the light-emitting element 60, and a ferrite bead FB2 connected to an electrode 62 of the light-emitting element 60. With this configuration, according to the embodiment, it is possible to suppress the generation of noise in the signal between the MOSFETs 20a and 20b without mounting ferrite beads outside the semiconductor device 1. Therefore, it is possible to improve the transmission characteristics of the signal between the MOSFETs 20a and 20b and suppress an increase in the mounting area.

[0052] Supplementally, in the photorelay device, the drive current of the light-emitting element is supplied from the other end side of the MOSFET and the light-emitting element toward the one end side in the Y direction, for example. In addition, in the photorelay device, the sources of the two MOSFETs are connected by wiring extending in the X direction, for example. That is, the photorelay device can be configured so that the direction in which the drive current of the light-emitting element is supplied and the direction of the wiring between the sources of the two MOSFETs cross each other. In the photorelay device having the above configuration, the interaction between the drive current of the light-emitting element and the signal between the MOSFETs may cause problems such as noise generation in the signal and deterioration of the transmission characteristics of the signal due to this. Such noise occurs, for example, in a frequency band around 3 GHz. In order to suppress the generation of noise and deterioration of the transmission characteristics, there are cases where a filter element for reducing noise is provided outside the photorelay device (case where an external filter element is provided). For example, a filter element is provided on the wiring connected to each of the anode electrode and the cathode electrode of the light-emitting element outside the photorelay device. However, in this case, there is a problem that the mounting area increases by mounting the filter element outside the semiconductor device.

[0053] According to the embodiment, the semiconductor device 1 includes ferrite beads FB1 and FB2 inside the semiconductor device 1. This makes it possible to suppress the generation of noise in signals between MOSFETs and to suppress an increase in the mounting area due to filter elements outside the semiconductor device 1.

[0054] Furthermore, according to the embodiment, since no external filter element is provided to reduce noise, the degree of freedom in arranging the semiconductor device 1 can be improved compared to the case where an external filter element is provided.

[0055] Moreover, according to the embodiment, the transmission characteristics can be improved compared to the case where an external filter element is provided. More specifically, when an external filter element is provided, the signal may interact with the current flowing in the power supply path including the wiring portion outside the semiconductor device between the filter element and the light-emitting element. On the other hand, according to the embodiment, since the ferrite beads FB1 and FB2 are provided inside the semiconductor device 1, the wiring length between each of the ferrite beads FB1 and FB2 and the light-emitting element 60 can be shortened compared to the case where an external filter element is provided. Therefore, the transmission characteristics of the semiconductor device 1 in the high frequency band can be improved.

[0056] Moreover, according to the embodiment, the wirings W1 and W2 are directly connected to the electrodes FP11 and FP21, respectively. With this configuration, it is possible to effectively suppress an increase in the wiring length between the ferrite beads FB1 and FB2 and the light emitting element 60. With this configuration, it is also possible to improve the transmission characteristics of the semiconductor device 1 in the high frequency band.

[0057] According to the embodiment, the wirings W1 and W2 are provided so as to extend substantially parallel to the Y direction. The wirings W1 and W2 are arranged adjacent to each other in the X direction. In this configuration, the magnetic fields of the wirings W1 and W2 act to cancel each other out. This can reduce the interaction between the drive current of the light-emitting element 60 and the signal. Therefore, the transmission characteristics can be improved.

[0058] In the embodiment, the ferrite bead FB1 is provided on the other end of the electrode 70 along the X direction. The ferrite bead FB2 is provided on one end of the electrode 71 along the X direction. The wiring W1 contacts the other end of the electrode FP11 along the X direction. The wiring W2 contacts one end of the electrode FP21 along the X direction. With these configurations, the wirings W1 and W2 are provided at positions close to each other in the X direction. Therefore, the wirings W1 and W2 can be provided so that the magnetic fields of the wirings W1 and W2 effectively cancel each other out. Therefore, the interaction between the driving current and the signal of the light-emitting element 60 is reduced, and the transmission characteristics are improved.

[0059] 2. Variations Next, a semiconductor device according to a modification will be described below. In the following, the description of the same configuration as the embodiment will be omitted, and the configuration different from the embodiment will be mainly described.

[0060] 2.1 First modified example In the above embodiment, the ferrite beads FB1 and FB2 are provided as separate chips, but this is not limiting. The ferrite beads FB1 and FB2 may be provided integrally.

[0061] In the following, the configuration of the semiconductor device 1 according to the first modification will be described, focusing mainly on the differences from the semiconductor device according to the embodiment.

[0062] The circuit configuration of the semiconductor device 1 according to the first modification is the same as the circuit configuration in the embodiment. The structure of the semiconductor device 1 according to the first modification will be described below with reference to Fig. 4. Fig. 4 is a perspective view showing an example of the structure of the semiconductor device according to the first modification. In Fig. 4, similar to Fig. 2, wiring is omitted from illustration.

[0063] The semiconductor device 1 includes a ferrite component FC. The ferrite component FC includes ferrite beads FB1 and FB2 that are electrically insulated from each other. The electrodes FP11 and FP21 are arranged, for example, so as to be exposed on the upper surface of the ferrite component FC. The electrodes FP12 and FP22 are arranged, for example, so as to be in contact with the electrodes 70 and 71 on the lower surface of the ferrite component FC, respectively.

[0064] The ferrite component FC only needs to include ferrite beads FB1 and FB2, and the internal configuration of the ferrite component FC is not particularly limited. For example, the ferrite component FC is a component including ferrite beads FB1 and FB2 built into a common daughter board. In this case, each of the ferrite beads FB1 and FB2 in the ferrite component FC is electrically connected to a wire and an electrode via the daughter board corresponding to the ferrite component FC. The ferrite component FC may also be a component configured as a single chip including ferrite beads FB1 and FB2 formed separately. Although not shown, the ferrite component FC may include a configuration of a conductor (via) and the like in addition to the configuration of the ferrite beads FB1 and FB2.

[0065] The configurations of the substrate B, electrodes 10a, 10b, 70, and 71, MOSFETs 20a and 20b, support 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a, and 82b, and wirings W1 to W7 in the first modified example can be similar to those in the embodiment.

[0066] Similarly to the embodiment, the first modified example also makes it possible to improve the transmission characteristics and suppress an increase in the mounting area.

[0067] 2.2 Second variant In the above-described embodiment, the electrodes FP11 and FP12, and the electrodes FP21 and FP22 are arranged so as to be aligned vertically (in the Z direction) on the surface of the substrate B, but this is not limiting. The electrodes FP11 and FP12, and the electrodes FP21 and FP22 may be arranged so as to be aligned, for example, in the X direction.

[0068] In the following, the configuration of the semiconductor device 1 according to the second modification will be described, focusing mainly on the differences from the semiconductor device according to the embodiment.

[0069] The circuit configuration of the semiconductor device 1 according to the second modification is equivalent to the circuit configuration in the embodiment and the first modification. The structure of the semiconductor device 1 according to the second modification will be described below with reference to FIG. 5. FIG. 5 is a perspective view showing an example of the structure of the semiconductor device according to the second modification. In FIG. 5, wiring is omitted, as in FIG. 2 and FIG. 4.

[0070] The semiconductor device 1 includes electrodes 70a, 70b, 71a, and 71b instead of the electrodes 70 and 71. The electrodes 70a, 70b, 71a, and 71b are provided on the upper surface of the substrate B. The electrodes 70a, 70b, 71a, and 71b are, for example, metal foils containing copper. The electrodes 70b, 70a, 71a, and 71b are, for example, provided so as to be aligned in this order from one end side to the other end side in the X direction. In addition, the electrodes 70a and 71a are preferably provided at positions close to each other in the X direction.

[0071] The electrode FP11 is provided on a side surface portion of the other end of the ferrite bead FB1 along the X direction. The electrode FP12 is provided on a side surface portion of one end of the ferrite bead FB1 along the X direction. With these configurations, the electrodes FP11 and FP12 are arranged to be aligned in the X direction. The electrode FP11 is arranged so that a portion of the side surface portion of the electrode FP11 facing downward is in contact with the electrode 70a. The electrode FP11 is arranged so that a portion of the side surface portion of the electrode FP12 facing downward is in contact with the electrode 70a along the X direction. The electrode FP12 is arranged so that a portion of the side surface portion of the electrode FP12 facing downward is in contact with the electrode 70b.

[0072] The electrode FP21 is provided on one end side of the ferrite bead FB2 along the X direction. The electrode FP22 is provided on the other end side of the ferrite bead FB2 along the X direction. With this configuration, the electrodes FP21 and FP22 are arranged to be aligned in the X direction. The electrode FP21 is arranged so that a portion of the side surface of the electrode FP21 facing downward is in contact with the electrode 71a. The electrode FP21 is arranged so that a portion of the side surface of the electrode FP22 facing downward is in contact with the electrode 71b. The electrode FP22 is arranged so that a portion of the side surface of the electrode FP22 facing downward is in contact with the electrode 71b.

[0073] 5, the electrode 70b is electrically connected to a terminal 80 via, for example, a conductor (via) penetrating the substrate B. Although not shown in FIG. 2, the electrode 71b is electrically connected to a terminal 81 via, for example, a conductor (via) penetrating the substrate B.

[0074] The configuration of the semiconductor device 1 will be further described with reference to Fig. 6. Fig. 6 is a plan view showing an example of the planar structure of a semiconductor device according to a second modified example.

[0075] The terminal 80 is provided so as to have a portion overlapping with the electrode 70b when viewed from above, for example. This allows the terminal 80 to be electrically connected to the electrode 70b via a conductor. In addition, in the second modified example, the terminal 80 is preferably provided so as not to overlap with the electrode 70a when viewed from above, for example. That is, the terminal 80 is preferably arranged so that the terminal 80 and the electrode 70a are spaced apart in the X direction when viewed from above. With the above-mentioned arrangement, for example, a short circuit caused by interlayer bonding between the electrode 70a and the terminal 80 can be prevented from causing a deterioration in the performance of the ferrite bead FB1.

[0076] The terminal 81 is provided so as to have a portion overlapping with the electrode 71b when viewed from above, for example. This allows the terminal 81 to be electrically connected to the electrode 71b via a conductor. In addition, in the second modified example, the terminal 81 is preferably provided so as not to overlap with the electrode 71a when viewed from above, for example. That is, the terminal 81 is preferably arranged so that the terminal 81 and the electrode 71a are spaced apart in the X direction when viewed from above. With the above-mentioned arrangement, for example, a short circuit caused by interlayer bonding between the electrode 71a and the terminal 81 can be prevented from causing a deterioration in the performance of the ferrite bead FB2.

[0077] The wiring W1 electrically connects the other end of the electrode 70a along the X direction to the electrode 61. The wiring W2 electrically connects one end of the electrode 71a along the X direction to the electrode 62. The wirings W1 and W2 are arranged adjacent to each other in the X direction and approximately parallel to the Y direction, similar to the embodiment and the first modified example. Moreover, the wirings W1 and W2 are preferably provided at positions close to each other in the X direction, similar to the embodiment and the first modified example.

[0078] The configurations of the substrate B, electrodes 10a and 10b, MOSFETs 20a and 20b, support 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 82a and 82b, and wiring W3 to W7 in the second modified example can be similar to those in the embodiment.

[0079] Similarly to the embodiment and the first modified example, the second modified example can also improve the transmission characteristics and suppress an increase in the mounting area.

[0080] 6, the wirings W1 and W2 are directly connected to the electrodes 70a and 71a, respectively. This configuration facilitates the formation of the wirings W1 and W2 and the manufacture of the semiconductor device 1. Therefore, according to the second modification, the yield in the manufacture of the semiconductor device 1 is improved.

[0081] 2.3 Third variant In the above-described second modified example, the wirings W1 and W2 are connected to the electrodes 70a and 71a, respectively, but this is not limited thereto. The wirings W1 and W2 may be directly connected to the ferrite beads FB1 and FB2, respectively.

[0082] In the following, the configuration of the semiconductor device 1 according to the third modification will be described, focusing mainly on the differences from the semiconductor device according to the second modification.

[0083] The circuit configuration of the semiconductor device 1 according to the third modification is equivalent to the circuit configurations in the embodiment, the first modification, and the second modification. The structure of the semiconductor device 1 according to the third modification will be described below with reference to Fig. 7. Fig. 7 is a plan view showing an example of the planar structure of the semiconductor device according to the third modification.

[0084] The wiring W1 is connected to an upwardly facing portion of the side surface of the electrode FP11, and the wiring W2 is connected to an upwardly facing portion of the side surface of the electrode FP21.

[0085] In the third modified example, the wirings W1 and W2 are arranged substantially parallel to the Y direction and adjacent to each other in the X direction, similar to the embodiment, the first modified example, and the second modified example.

[0086] Moreover, the wirings W1 and W2 are preferably provided at positions close to each other in the X direction, as in the embodiment, the first modification, and the second modification. The electrode FP11 is provided, for example, so as to contact the other end of the electrode 70a along the X direction. The electrode FP21 is provided, for example, so as to contact one end of the electrode 71a along the X direction. With these configurations, the wirings W1 and W2 can be provided at positions close to each other in the X direction.

[0087] The configurations of the substrate B, electrodes 10a, 10b, 70a, and 70b, MOSFETs 20a and 20b, support 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a, and 82b, and wirings W3 to W7 in the third modified example can be similar to those in the second modified example.

[0088] Similarly to the embodiment, the first modification, and the second modification, the third modification can also improve the transmission characteristics and suppress an increase in the mounting area.

[0089] 2.4 Fourth variant In the above-described second and third modified examples, the electrodes FP11 and FP12, and the electrodes FP21 and FP22 are aligned along the X direction, but this is not limiting. The electrodes FP11 and FP12, and the electrodes FP21 and FP22 may be aligned along the Y direction.

[0090] In the following, the configuration of the semiconductor device 1 according to the fourth modification will be described, focusing mainly on the differences from the semiconductor devices according to the second and third modifications.

[0091] The circuit configuration of the semiconductor device 1 according to the fourth modification is equivalent to the circuit configurations in the embodiment, the first modification, the second modification, and the third modification. The structure of the semiconductor device 1 according to the fourth modification will be described below with reference to FIG. 8. FIG. 8 is a perspective view showing an example of the structure of the semiconductor device according to the fourth modification. In FIG. 8, wiring is omitted, as in FIGS. 2, 4, and 5.

[0092] The electrodes 70a and 70b are provided so as to have portions aligned in the Y direction. The electrode 70a is provided, for example, on one end side along the Y direction from the electrode 70b. The electrode 70a is provided, for example, so as to extend in the X direction. The electrode 70a includes, for example, a portion extending in the Y direction at the other end side along the X direction. With the above configuration, the electrode 70a has, for example, an L-shape. Note that in the above description, an example has been shown in which the electrode 70a is provided on one end side along the Y direction from the electrode 70b, but this is not limiting. The electrode 70a may be provided on the other end side along the Y direction from the electrode 70b.

[0093] The electrodes 71a and 71b are provided so as to have portions aligned in the Y direction. The electrode 71a is provided, for example, closer to one end along the Y direction than the electrode 71b. The electrode 71a is provided so as to extend in the X direction, for example. The electrode 71a includes, for example, a portion extending in the Y direction at one end along the X direction. With the above configuration, the electrode 71a has, for example, an L-shape. Note that in the above description, an example has been shown in which the electrode 71a is provided closer to one end along the Y direction than the electrode 71b, but this is not limiting. The electrode 71a may be provided closer to the other end along the Y direction than the electrode 71b.

[0094] In the above-described configuration of the electrodes 70a and 71a, for example, the portion of the electrode 70a extending in the Y direction and the portion of the electrode 71a extending in the Y direction are arranged adjacent to each other in the X direction. Moreover, it is preferable that the portion of the electrode 70a extending in the Y direction and the portion of the electrode 71a extending in the Y direction are disposed close to each other in the X direction.

[0095] The electrode FP11 is provided on a side surface portion of one end of the ferrite bead FB1 along the Y direction. The electrode FP12 is provided on a side surface portion of the other end of the ferrite bead FB1 along the Y direction. With this configuration, the electrodes FP11 and FP12 are arranged to be aligned in the Y direction. The electrode FP11 is arranged, for example, such that a portion of the side surface portion of the electrode FP11 facing downward contacts one end of the electrode 70a along the X direction. The electrode FP12 is arranged such that a portion of the side surface portion of the electrode FP12 facing downward contacts the electrode 70b.

[0096] The electrode FP21 is provided on one end side of the ferrite bead FB2 along the Y direction. The electrode FP22 is provided on the other end side of the ferrite bead FB2 along the Y direction. With this configuration, the electrodes FP21 and FP22 are arranged to be aligned in the Y direction. The electrode FP21 is arranged, for example, such that a portion of the side surface of the electrode FP21 facing downward is in contact with the other end side of the electrode 71a along the X direction. The electrode FP22 is arranged such that a portion of the side surface of the electrode FP22 facing downward is in contact with the electrode 71b.

[0097] The configuration of the semiconductor device 1 will be further described with reference to Fig. 9. Fig. 9 is a plan view showing an example of the planar structure of a semiconductor device according to a fourth modified example.

[0098] The wiring W1 electrically connects, for example, a portion of the electrode 70a extending in the Y direction to the electrode 61. The wiring W2 electrically connects, for example, a portion of the electrode 71a extending in the Y direction to the electrode 62.

[0099] In the fourth modification, the wirings W1 and W2 are arranged substantially parallel to the Y direction and adjacent to each other in the X direction, similar to the embodiment, the first modification, the second modification, and the third modification. Moreover, the wirings W1 and W2 are preferably provided at positions close to each other in the X direction.

[0100] The configurations of the substrate B, electrodes 10a and 10b, MOSFETs 20a and 20b, support 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a, and 82b, and wirings W3 to W7 in the fourth modified example can be similar to those in the second and third modified examples.

[0101] Similarly to the embodiment, the first modification, and the second modification, the fourth modification can also improve the transmission characteristics and suppress an increase in the mounting area.

[0102] In the fourth modification, the wirings W1 and W2 are directly connected to the electrodes 70a and 71a. As a result, according to the fourth modification, similar to the second modification, the formation of the wirings W1 and W2 and the manufacture of the semiconductor device 1 become easy. Therefore, the yield in the manufacture of the semiconductor device 1 is improved.

[0103] 3. Other In the above-mentioned fourth modified example, the wirings W1 and W2 are directly connected to the electrodes 70a and 71a, respectively, but this is not limited thereto. As shown in Fig. 10, the wirings W1 and W2 may be directly connected to the electrodes FP11 and FP21, respectively, as in the third modified example. Fig. 10 is a plan view showing an example of a planar structure of a semiconductor device according to another example. In this case, the ferrite beads FB1 and FB2 and the electrodes 70a, 70b, 71a, and 71b are also arranged so that the wirings W1 and W2 are parallel to each other, for example.

[0104] Although some embodiments have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0105] 1...semiconductor device, 20a, 20b...MOSFET, 10a, 10b, 70, 71, 70a, 70b, 71a, 71b...electrodes, 30...support, 40...light-receiving element, 50...adhesive layer, 60...light-emitting element, 80, 81, 82a, 82b...terminals, B...substrate, W1 to W7...wirings.

Claims

1. A substrate; a first transistor and a second transistor each disposed above the first surface of the substrate and having sources commonly connected; a light emitting element provided above the first surface of the substrate and having an anode electrode and a cathode electrode; a light receiving element provided above the first surface of the substrate, the light receiving element turning the first transistor and the second transistor on or off depending on a light emitting state of the light emitting element; a first filter element provided above the first surface of the substrate and connected to the anode electrode of the light emitting element; a second filter element provided above the first surface of the substrate and connected to the cathode electrode of the light emitting element; Equipped with Semiconductor device.

2. a first wiring electrically connecting the first filter element and the anode electrode of the light emitting element; a second wiring electrically connecting the second filter element and the cathode electrode of the light emitting element; Further equipped with The first wiring and the second wiring are disposed substantially parallel to each other when viewed from above. The semiconductor device according to claim 1.

3. the first filter element includes a first filter electrode and a second filter electrode; the second filter element includes a third filter electrode and a fourth filter electrode; 3. The semiconductor device according to claim 2.

4. the first filter electrode and the second filter electrode face each other in a first direction perpendicular to the first surface, the third filter electrode and the fourth filter electrode face each other in the first direction, the first filter electrode is provided on an upper surface of the first filter element; the second filter electrode is provided on a lower surface of the first filter element, the third filter electrode is provided on an upper surface of the second filter element; the fourth filter electrode is provided on a lower surface of the second filter element; 4. The semiconductor device according to claim 3.

5. the first filter electrode and the second filter electrode face each other in a first direction parallel to the first surface, the third filter electrode and the fourth filter electrode face each other in the first direction.

4. The semiconductor device according to claim 3.

6. the first transistor and the second transistor are aligned in the first direction, 6. The semiconductor device according to claim 5.

7. the first transistor and the second transistor are aligned in a second direction perpendicular to the first direction; 6. The semiconductor device according to claim 5.

8. the first wiring is directly connected to the first filter electrode, the second wiring is directly connected to the third filter electrode; 4. The semiconductor device according to claim 3.

9. The first filter element and the second filter element are provided integrally. The semiconductor device according to claim 1.

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