Semiconductor device

Abstract

To provide a semiconductor device with small inductance.SOLUTION: A semiconductor device of the embodiment has a first circuit board having a plurality of first semiconductor elements, a second circuit board having a plurality of second semiconductor elements, and an output terminal connecting the first output wiring of the first circuit board to the second output wiring of the second circuit board, having a flat section, a first foot, a second foot and a first bridge, and where the first foot connects to the first output wiring, the second foot connects to the second output wiring, and the first and second foot are connected at the first bridge.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] Power semiconductor devices designed for power control, including semiconductor elements such as MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) and IGBTs (Insulated Gate Bipolar Transistors), are being developed for a wide range of applications, including power generation and transmission, rotating machines such as pumps and blowers, power supply devices for communication systems and factories, railways using AC motors, electric vehicles, and home appliances.

[0003] Typically, in a power semiconductor device, a plurality of semiconductor elements provided on a base (substrate) are connected in parallel using bonding wires or a terminal board, making it possible to handle large amounts of power. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication 2020-155501 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a semiconductor device having a small inductance. [Means for solving the problem]

[0006] A semiconductor device according to an embodiment includes a first circuit board having a plurality of first semiconductor elements, a second circuit board having a plurality of second semiconductor elements, and an output terminal that connects a first output wiring of the first circuit board to a second output wiring of the second circuit board and has a planar portion, a first leg, a second leg and a first bridge portion, the first leg being connected to the first output wiring and the second leg being connected to the second output wiring, and the first leg and second leg being connected by the first bridge portion. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic perspective view of a semiconductor device according to an embodiment; [Diagram 2] 1 is a schematic top view of a semiconductor device according to an embodiment; [Diagram 3] FIG. 2 is an equivalent circuit diagram of the semiconductor device according to the embodiment. [Figure 4] FIG. 2 is an equivalent circuit diagram of the semiconductor device according to the embodiment. [Diagram 5] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 6] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 7] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 8] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 9] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 10] 1 is a schematic top view of a semiconductor device according to an embodiment; [Figure 11] FIG. [Figure 12] FIG. 2 is an equivalent circuit diagram of the semiconductor device according to the embodiment. [Figure 13] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 14] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 15] 1 is a schematic diagram of a semiconductor device according to an embodiment; [Figure 16] 1 is a schematic diagram of a semiconductor device according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are used to designate the same or similar components, and the description of components that have already been described may be omitted.

[0009] (First embodiment) A semiconductor device of a first embodiment includes a first circuit board having a plurality of first semiconductor elements, a second circuit board having a plurality of second semiconductor elements, and an output terminal connecting a first output wiring of the first circuit board and a second output wiring of the second circuit board, the output terminal having a planar portion, a first leg, a second leg and a first bridge portion, the first leg connected to the first output wiring and the second leg connected to the second output wiring, the first leg and the second leg connected by the first bridge portion.

[0010] Fig. 1 is a schematic perspective view of a semiconductor device 100 according to a first embodiment. Fig. 2 is a schematic top view of the semiconductor device 100 according to the first embodiment. In the schematic views of Fig. 1 and Fig. 2, members such as a gate terminal are omitted. In the schematic view of Fig. 1, some members (e.g., terminals) are partially illustrated.

[0011] The first direction (X direction) preferably intersects with the second direction (Y direction) and is perpendicular to the first direction (X direction). The first direction (X direction) preferably intersects with the third direction (Z direction) and is perpendicular to the first direction (X direction). The second direction (Y direction) and the third direction (Z direction) preferably intersect with each other and are perpendicular to each other.

[0012] Figures 3 and 4 are equivalent circuits of the semiconductor device 100 of the first embodiment. Figures 5, 6, 7, 8, and 9 are schematic diagrams of the semiconductor device 100 of the first embodiment with some members removed. Figures 7, 8, and 9 are cross-sectional views taken along line AA' in Figure 6.

[0013] The semiconductor device 100 of the first embodiment is a power semiconductor module. As shown in FIG. 4, the semiconductor device 100 of the first embodiment is a so-called "2-in-1" type module that can configure a half-bridge circuit with one module. The semiconductor device 100 has three half-bridge units connected in parallel. For example, a three-phase inverter circuit can be configured by using three semiconductor devices 100 of the first embodiment. For example, a semiconductor device equipped with three circuits of the semiconductor device 100 of the first embodiment may include a three-phase inverter circuit.

[0014] FIG. 3 is an equivalent circuit diagram of a semiconductor device 100 in which MOSFETs are used for the semiconductor elements Q1 to Q4.

[0015] FIG. 4 is an equivalent circuit diagram of a semiconductor device 100 in which IGBTs are used for the semiconductor elements Q1 to Q4.

[0016] Although the semiconductor device 100 will be described taking an n-channel MOSFET or an npn-type IGBT as an example, the semiconductor elements Q1 to Q4 may be p-channel MOSFETs or pnp-type IGBTs. For convenience, the base of an IGBT is referred to as the gate.

[0017] As shown in FIGS. 3 and 4, the semiconductor device 100 has a positive terminal P (first terminal 32), an AC output terminal AC (output terminal 31), and a negative terminal N (second terminal 33).

[0018] The semiconductor device 100 has a plurality of high-side semiconductor elements (a first semiconductor element Q1, a second semiconductor element Q2) and a plurality of low-side semiconductor elements (a semiconductor element Q3, a semiconductor element Q4). In FIG. 1, the first semiconductor element Q1, the second semiconductor element Q2, the semiconductor element Q3, and the semiconductor element Q4 each include three semiconductor elements.

[0019] The multiple high-side semiconductor elements are connected in parallel. The multiple low-side semiconductor elements are connected in parallel. The multiple high-side semiconductor elements connected in parallel and the multiple low-side semiconductor elements connected in parallel are connected in series.

[0020] As shown in Figures 1 and 2, the semiconductor device 100 has a substrate 1, a first circuit board 2A, a second circuit board 2B, a first semiconductor element 3AH1, a first semiconductor element 3AH2, a first semiconductor element 3AH3, a semiconductor element 3AL1, a semiconductor element 3AL2, a semiconductor element 3AL3, a second semiconductor element 3BH1, a second semiconductor element 3BH2, a second semiconductor element 3BH3, a semiconductor element 3BL1, a semiconductor element 3BL2, a semiconductor element 3BL3, wiring 4A, wiring 4B, wiring 5A, wiring 5B, wiring 6A, wiring 6B, wiring 7A, wiring 7B, an exterior material 8, an output terminal 31, a first terminal 32, and a second terminal 33.

[0021] The substrate 1 supports the first circuit board 2A and the second circuit board 2B. The substrate 1 is, for example, a member having high heat dissipation properties, such as a metal plate. The substrate 1 is preferably a Cu plate or an AlSiC plate.

[0022] The first circuit board 2A is provided on the substrate 1. The first circuit board 2A is a substrate in which a conductive layer 21A, a conductive layer 22A, a conductive layer 23A, a conductive layer 24A, and a conductive layer 25A are provided on an insulating substrate. The conductive layer 21A, the conductive layer 22A, the conductive layer 23A, the conductive layer 24A, and the conductive layer 25A are made of a conductive material such as Cu.

[0023] The second circuit board 2B is provided on the substrate 1. The second circuit board 2B is a substrate in which a conductive layer 21B, a conductive layer 22B, a conductive layer 23B, a conductive layer 24B, and a conductive layer 25B are provided on an insulating substrate. The conductive layer 21B, the conductive layer 22B, the conductive layer 23B, the conductive layer 24B, and the conductive layer 25B are made of a conductive material such as Cu.

[0024] It is preferable that first circuit board 2A and second circuit board 2B are configured to be line symmetrical with respect to an imaginary line that passes through the center of board 1 and divides board 1 into two. The wiring configuration of first circuit board 2A and second circuit board 2B shown in Figure 1 etc. is one example, and is not limited to the configuration shown in the figures and described in the specification.

[0025] The first semiconductor element 3AH1, the first semiconductor element 3AH2, the first semiconductor element 3AH3, the semiconductor element 3AL1, the semiconductor element 3AL2, the semiconductor element 3AL3, the second semiconductor element 3BH1, the second semiconductor element 3BH2, the second semiconductor element 3BH3, the semiconductor element 3BL1, the semiconductor element 3BL2 and the semiconductor element 3BL3 are MOSFETs or IGBTs.

[0026] The first semiconductor element 3AH1, the first semiconductor element 3AH2, the first semiconductor element 3AH3, the semiconductor element 3AL1, the semiconductor element 3AL2, and the semiconductor element 3AL3 are provided on the first circuit board 2A. In the specification, the first semiconductor element 3AH1, the first semiconductor element 3AH2, and the first semiconductor element 3AH3 may be collectively referred to as the first semiconductor element Q1. The semiconductor element 3AL1, the semiconductor element 3AL2, and the semiconductor element 3AL3 may be collectively referred to as the semiconductor element Q3.

[0027] It is preferable that the first semiconductor element 3AH1, the first semiconductor element 3AH2, the first semiconductor element 3AH3, the semiconductor element 3AL1, the semiconductor element 3AL2, the semiconductor element 3AL3, the second semiconductor element 3BH1, the second semiconductor element 3BH2, the second semiconductor element 3BH3, the semiconductor element 3BL1, the semiconductor element 3BL2 and the semiconductor element 3BL3 are semiconductor elements having the same configuration or the same characteristics except for individual differences.

[0028] The first semiconductor element 3AH1, the first semiconductor element 3AH2, and the first semiconductor element 3AH3 are high-side semiconductor elements provided on the first circuit board 2A. The first semiconductor element 3AH1, the first semiconductor element 3AH2, and the first semiconductor element 3AH3 are provided on the conductive layer 21A such that their source electrodes or emitter electrodes face the conductive layer 21A side.

[0029] The semiconductor element 3AL1, the semiconductor element 3AL2, and the semiconductor element 3AL3 are low-side semiconductor elements provided on the first circuit board 2A. The semiconductor element 3AL1, the semiconductor element 3AL2, and the semiconductor element 3AL3 are provided on the conductive layer 22A such that their drain electrodes or collector electrodes face the conductive layer 22A side.

[0030] The second semiconductor element 3BH1, the second semiconductor element 3BH2, the second semiconductor element 3BH3, the semiconductor element 3BL1, the semiconductor element 3BL2, and the semiconductor element 3BL3 are provided on the second circuit board 2B. In the specification, the second semiconductor element 3BH1, the second semiconductor element 3BH2, and the second semiconductor element 3BH3 may be referred to as the second semiconductor element Q2. The semiconductor element 3BL1, the semiconductor element 3BL2, and the semiconductor element 3BL3 may be referred to as the semiconductor element Q4.

[0031] The second semiconductor element 3BH1, the second semiconductor element 3BH2, and the second semiconductor element 3BH3 are high-side semiconductor elements provided on the second circuit board 2B. The second semiconductor element 3BH1, the second semiconductor element 3BH2, and the second semiconductor element 3BH3 are provided on the conductive layer 21B such that their source electrodes or emitter electrodes face the conductive layer 21B side.

[0032] The semiconductor element 3BL1, the semiconductor element 3BL2, and the semiconductor element 3BL3 are low-side semiconductor elements provided on the second circuit board 2B. The semiconductor element 3BL1, the semiconductor element 3BL2, and the semiconductor element 3BL3 are provided on the conductive layer 22B such that their drain electrodes or collector electrodes face the conductive layer 22B side.

[0033] The wiring 4A is a wiring that connects the source electrode of the first semiconductor element Q1 on the high side to the conductive layer 22 A. The wiring 4A is, for example, an aluminum bonding wire.

[0034] The wiring 4B is a wiring that connects the source electrode of the second semiconductor element Q2 on the high side and the conductive layer 22 B. The wiring 4B is, for example, an aluminum bonding wire.

[0035] The wiring 5A is a wiring that connects the gate electrode of the first semiconductor element Q1 on the high side to the conductive layer 24 A. The wiring 5A is, for example, an aluminum bonding wire.

[0036] The wiring 5B is a wiring that connects the gate electrode of the second semiconductor element Q2 on the high side to the conductive layer 24 B. The wiring 5B is, for example, an aluminum bonding wire.

[0037] The wiring 6A is a wiring that connects the source electrode of the low-side semiconductor element Q3 and the conductive layer 23 A. The wiring 6A is, for example, an aluminum bonding wire.

[0038] The wiring 6B is a wiring that connects the source electrode of the low-side semiconductor element Q4 and the conductive layer 23B. The wiring 6B is, for example, an aluminum bonding wire.

[0039] The wiring 7A is a wiring that connects the gate electrode of the low-side semiconductor element Q3 and the conductive layer 25 A. The wiring 7A is, for example, an aluminum bonding wire.

[0040] The wiring 7B is a wiring that connects the gate electrode of the low-side semiconductor element Q4 and the conductive layer 25 B. The wiring 7B is, for example, an aluminum bonding wire.

[0041] The exterior material 8 is provided around the substrate 1, the first circuit board 2A, and the second circuit board 2B. The exterior material 8 is an example of a frame. A part of the exterior material 8 is provided on the substrate 1.

[0042] The exterior material 8 has a function of protecting the first semiconductor element Q1, the second semiconductor element Q2, the semiconductor element Q3, the semiconductor element Q4, the first circuit board 2A, and the second circuit board 2B.

[0043] The exterior material 8 is provided with cutouts for fixing terminals such as the output terminal 31, the first terminal 32, and the second terminal 33, and the like.

[0044] The exterior material 8 includes a resin. The resin of the exterior material 8 is, for example, a polyphenylene sulfide resin (PPS resin). The exterior material 8 is made of, for example, a polyphenylene sulfide resin (PPS resin).

[0045] A lid (not shown) is provided on the upper part of the exterior material 8. The lid has a function of protecting the first semiconductor element, the second semiconductor element, the substrate 1, and the like.

[0046] The conductive layer 21A is a wiring layer provided on the first circuit board 2A. The first semiconductor elements Q1 are provided on the conductive layer 21A side by side in the second direction (Y direction). The first semiconductor elements Q1 are connected to the conductive layer 21A via a solder layer or a sintered bonding layer (a conductive bonding layer formed by sintering Ag paste or the like). The conductive layer 21A has a first power wiring 21Aa extending toward the second circuit board 2B.

[0047] The conductive layer 21B is a wiring layer provided on the second circuit board 2B. The second semiconductor elements Q2 are provided on the conductive layer 21B in a line in the second direction (Y direction). The second semiconductor elements Q2 are connected to the conductive layer 21B via a solder layer or a sintered bonding layer. The conductive layer 21B has a second power wiring 21Ba extending toward the first circuit board 2A.

[0048] The first power wiring 21Aa and the second power wiring 21Ba are electrically connected via a first terminal 32. The first power wiring 21Aa and the second power wiring 21Ba are preferably parallel to each other. The first power wiring 21Aa and the second power wiring 21Ba are preferably aligned in a straight line.

[0049] The conductive layer 22A is a wiring layer provided on the first circuit board 2A. The semiconductor elements Q3 are provided on the conductive layer 22A in a line in the second direction (Y direction). The semiconductor elements Q3 are connected to the conductive layer 22A via a solder layer or a sintered bonding layer. The conductive layer 22A is connected to a wiring 4A that is electrically connected to the first semiconductor element Q1. The conductive layer 22A has a first output wiring 22Aa that extends toward the second circuit board 2B.

[0050] The conductive layer 22B is a wiring layer provided on the second circuit board 2B. The semiconductor elements Q4 are provided on the conductive layer 22B in a line in the second direction (Y direction). The semiconductor elements Q4 are connected to the conductive layer 22B via a solder layer or a sintered bonding layer. The conductive layer 22B is connected to the wiring 4B that is electrically connected to the second semiconductor element Q2. The conductive layer 22B has a first output wiring 22Aa that extends toward the first circuit board 21.

[0051] The first output wiring 22Aa and the second output wiring 22Ba are electrically connected via the output terminal 31. The first output wiring 22Aa and the second output wiring 22Ba are preferably parallel to each other. The first output wiring 22Aa and the second output wiring 22Ba are preferably aligned in a straight line.

[0052] The conductive layer 23A is a wiring layer provided on the first circuit board 2A. The conductive layer 23A is connected to the wiring 6A that is electrically connected to the low-side second semiconductor element Q2.

[0053] The conductive layer 23B is a wiring layer provided on the second circuit board 2B. The conductive layer 23B is connected to a wiring 6B that is electrically connected to the low-side semiconductor element Q4.

[0054] The conductive layer 23A and the conductive layer 23B are electrically connected via a second terminal 33.

[0055] The conductive layer 24A is a wiring layer provided on the first circuit board 2A. The conductive layer 24A is connected to a wiring 5A that is electrically connected to the first high-side semiconductor element Q1.

[0056] The conductive layer 24B is a wiring layer provided on the second circuit board 2B. The conductive layer 24B is connected to a wiring 5B that is electrically connected to the second high-side semiconductor element Q2.

[0057] The conductive layer 25A is a wiring layer provided on the first circuit board 2A. The conductive layer 25A is connected to a wiring 7A that is electrically connected to the low-side semiconductor element Q3.

[0058] The conductive layer 25B is a wiring layer provided on the second circuit board 2B. The conductive layer 25B is connected to a wiring 7B that is electrically connected to the low-side semiconductor element Q4.

[0059] The output terminal 31 is provided on the first circuit board 2A and the second circuit board 2B. The output terminal 31 straddles the first circuit board 2A and the second circuit board 2B. The output terminal 31 connects the first output wiring 22Aa and the second output wiring 22Ba. The output terminal 31 electrically connects the first output wiring 22Aa and the second output wiring 22Ba. It is preferable that the output terminal 31 directly and electrically connects the first output wiring 22Aa and the second output wiring 22Ba.

[0060] 1 and 5, the output terminal 31 has a flat portion 31a, a first leg portion 31b, a second leg portion 31c, and a first bridge portion 31d. A specific structure of the output terminal 31 is shown in the schematic diagram of the second embodiment in Fig. 11. The output terminal 31 has an opening such as a screw hole in the portion that connects to the outside.

[0061] The flat portion 31a is connected to the first leg 31b and the second leg 31c. The first leg 31b and the second leg 31c extend from the flat portion 31a.

[0062] The first leg 31b is connected to the first output wiring 22Aa. The first leg 31b is preferably directly connected to the first output wiring 22Aa. The first leg 31b has a two-fold structure from the flat portion 31a to the connection portion of the first leg 31b and the first output wiring 22Aa.

[0063] The second leg 31c is connected to the second output wiring 22Ba. The second leg 31c is preferably directly connected to the second output wiring 22Ba. The second leg 31c has a two-fold bend structure from the flat portion 31a to the connection portion of the second leg 31c and the second output wiring 22Ba.

[0064] The first bridge portion 31d connects the first leg 31b and the second leg 31c. The first bridge portion 31d is provided between the first leg 31b and the second leg 31c. The first bridge portion 31d is preferably directly and electrically connected to the first leg 31b and the second leg 31c. The first bridge portion 31d electrically connects T1 and T2 in the equivalent circuit diagrams of Figures 3 and 4.

[0065] The first leg 31b has a bent shape at a connection portion with the flat portion 31a and a connection portion with the first output wiring 22Aa. The second leg 31c has a bent shape at a connection portion with the flat portion 31a and a connection portion with the second output wiring 22Ba. It is preferable that the path from the first output wiring 22Aa to the second output wiring 22Ba that passes through the first bridge portion 31d does not pass through the bent portions of the first leg 31b and the second leg 31c.

[0066] The first bridge portion 31d is preferably a single conductor connecting the first leg portion 31b and the second leg portion 31c. The first bridge portion 31d is preferably a conductor in the form of, for example, a flat plate or a partially curved ribbon.

[0067] First bridge portion 31d is preferably a conductor that is not divided into two or more pieces and connects first leg portion 31b and second leg portion 31c.

[0068] Since the first bridge portion 31d is not a thin wire such as a bonding wire, it is unlikely to be cut when the output terminal 31 is fixed to the first circuit board 2A and the second circuit board B, and is therefore highly reliable.

[0069] The source electrode on the output side of the first semiconductor element Q1 and the source electrode on the output side of the second semiconductor element Q2 are connected by the first bridge 31d (Connection Mode 1). If the first bridge 31d does not exist, the source electrode of the first semiconductor element Q1 and the source electrode of the second semiconductor element Q2 are connected via the first leg 31b, the flat portion 31a, and the second leg 31c (Connection Mode 2). In Connection Mode 1, the source electrodes can be connected by the first bridge 31d without passing through the four bends from the first leg 31b through the flat portion 31a to the second leg 31c. The semiconductor device 100 has Connection Mode 1, which has a shorter wiring path than Connection Mode 2. By connecting the source electrode of the first semiconductor element Q1 and the source electrode of the second semiconductor element Q2 in Connection Mode 1, which has a shorter wiring path, the source electrodes between the circuit boards can be connected by low-inductance wiring.

[0070] 5, the height of the first bridge 31d (the distance in the Z direction based on the plane of the first output wiring 22Aa or the second output wiring 22Ba) is much lower than the height H1 of the first leg 31b and the height of the second leg 31c. Since the height of the first bridge 31d is lower than the height H1 of the first leg 31b and the height of the second leg 31c, the sources are connected by wiring with a short path via the first bridge 31d.

[0071] In the case of a semiconductor device that does not have connection configuration 1, the inductance of the wiring connecting the source electrode of the first semiconductor element Q1 and the source electrode of the second semiconductor element Q2 becomes large, and due to individual differences in the semiconductor elements included in the semiconductor device 100, variations in the source potential of each semiconductor element in the first semiconductor element Q1 (first semiconductor element 3AH1, first semiconductor element 3AH2, and first semiconductor element 3AH3), variations in the source potential of each semiconductor element in the second semiconductor element Q2 (second semiconductor element 3BH1, second semiconductor element 3BH2, and second semiconductor element 3BH3), and variations in the source potential between the first semiconductor element Q1 and the second semiconductor element Q2 are likely to occur.

[0072] Since the source potential serves as the reference for the gate, variations in the potential can cause oscillations in the gate signal, which can cause the semiconductor element to oscillate.

[0073] In the semiconductor device including the connection configuration 1, the sources between the substrates are connected with low inductance, and the variation in the above three source potentials is suppressed. Furthermore, the oscillation of the gate signal is reduced or eliminated, thereby preventing the above oscillation.

[0074] The terminals used in the semiconductor module are ultrasonically bonded to the conductive layer. The output terminal 31 needs to have a certain length of leg to relieve the stress generated during ultrasonic bonding, and it is difficult to shorten the leg of the output terminal 31.

[0075] If a bonding wire is formed between the legs of the output terminal 31, the bonding wire and the output terminal 31 will be too close to each other, making the bonding wire more likely to break when ultrasonically bonding the output terminal 31. Misalignment during the manufacture of the semiconductor device 100 can make the bonding wire between the legs of the output terminal 31 even more likely to break when ultrasonically bonding the output terminal 31.

[0076] In addition, the first bridge portion 31d is not a thin wire such as a bonding wire. The first bridge portion 31d is a thick wire, and has a lower inductance than a thin wire such as a bonding wire, so that the source electrodes can be connected with a low-inductance wire. The first bridge portion 31d has the effect of both reducing inductance by shortening the wiring path and reducing inductance by using a thick wire.

[0077] In the semiconductor device 100 of the embodiment, the sources can be connected with a low-inductance wiring by adding the first bridge portion 31d without modifying the shape of the existing AC output terminal except for the bridge portion. The output terminal 31AC of the embodiment is preferable in that it is not necessary to modify the shape of the entire AC output terminal in order to add the first bridge portion 31d. Therefore, the output terminal 31 having the first bridge portion 31d can be adopted in semiconductor modules having various circuit configurations other than those shown in the drawings.

[0078] For example, even if the second leg 31c (or the first leg 31b) is removed, the source of the first semiconductor element Q1 and the source of the second semiconductor element Q2 can be connected with low inductance, but the currents output from the source of the first semiconductor element Q1 and the source of the second semiconductor element Q2 both flow through the first leg 31b. If the second leg 31c is removed, it may be necessary to change the design of the output terminal 31 as a whole in terms of the current capacity of the first leg 31b, so an output terminal 31 having the second leg 31c is preferable.

[0079] The first terminal 32 is provided on the first circuit board 2A and the second circuit board 2B. The first terminal 32 straddles the first circuit board 2A and the second circuit board 2B. The first terminal 32 connects the first power wiring 21Aa and the second power wiring 21Ba. The first terminal 32 electrically connects the first power wiring 21Aa and the second power wiring 21Ba. It is preferable that the first terminal 32 directly and electrically connects the first power wiring 21Aa and the second power wiring 21Ba.

[0080] The second terminal 33 is provided on the first circuit board 2A and the second circuit board 2B. The second terminal 33 straddles the first circuit board 2A and the second circuit board 2B. The second terminal 33 connects the conductive layer 23A and the conductive layer 23B. The second terminal 33 electrically connects the conductive layer 23A and the conductive layer 23B. It is preferable that the second terminal 33 directly and electrically connects the conductive layer 23A and the conductive layer 23B.

[0081] The width of each component is shown in the schematic diagram of Figure 6. The wiring width of the first bridge portion 31d is represented by W0. The wiring width of the first output wiring 22Aa is represented by W1. The wiring width of the second output wiring 22Ba is represented by W2. The wiring width of the first leg portion 31b is represented by W3. The wiring width of the second leg portion 31c is represented by W4.

[0082] The wiring width W0 of the first bridge portion 31d is the length of the first bridge portion 31d in a direction perpendicular to the direction from the first leg 31b to the second leg 31c when viewing the first bridge portion 31d from above as shown in the schematic diagram of Figure 2. The wiring width W0 does not take into account the portion where the first leg 31b and the first bridge portion 31d overlap in the Z direction.

[0083] The maximum value of the wiring width W0 of the first bridge portion 31d is preferably 100% or more and 120% or less of the average value of the wiring width W0.

[0084] The minimum value of the wiring width W0 of the first bridge portion 31d is preferably 80% or more and 100% or less of the average value of the wiring width W0.

[0085] The wiring width W1 of the first output wiring 22Aa is the average width of the first output wiring 22Aa including the portion where the first output wiring 22Aa and the first leg 31b are connected.

[0086] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W0 of the first bridge portion 31d is preferably 60% to 100%, and more preferably 65% ​​to 95%, of the wiring width W1 of the first output wiring 22Aa.

[0087] The wiring width W2 of the second output wiring 22Ba is the average value of the width of the second output wiring 22Ba including the portion where the second output wiring 22Ba and the second leg 31c are connected.

[0088] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W0 of the first bridge portion 31d is preferably 60% to 100%, and more preferably 65% ​​to 95%, of the wiring width W2 of the second output wiring 22Ba.

[0089] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W3 of the first leg 31b is preferably 70% or more and 100% or less of the wiring width W1, and more preferably 75% or more and 95% or less.

[0090] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W4 of second leg 31c is preferably 70% or more and 100% or less of the wiring width W2, and more preferably 75% or more and 95% or less.

[0091] From the viewpoint of reducing the inductance of the wiring between the sources, the wiring width W0 of the first bridge portion 31d is preferably 60% or more and 100% or less of the wiring width W1 of the first output wiring 22Aa and 60% or more and 100% or less of the wiring width W2 of the second output wiring 22Ba, and more preferably 65% ​​or more and 95% or less of the wiring width W1 of the first output wiring 22Aa and 65% or more and 95% or less of the wiring width W2 of the second output wiring 22Ba.

[0092] The length direction of the first bridge portion 31d is preferably the direction from the first circuit board 2A to the second circuit board 2B. The width direction of the first bridge portion 31d is preferably the width direction of the first output wiring 22Aa. The width direction of the first bridge portion 31d is preferably the width direction of the second output wiring 22Ba. If the width direction of the first bridge portion 31d is significantly misaligned with the width direction of the second output wiring 22Ba, the wiring length is not preferably increased. The width direction of the first bridge portion 31d and the width direction of the first output wiring 22Aa are preferably approximately the same, and the difference in angle between the width direction of the first bridge portion 31d and the width direction of the first output wiring 22Aa is preferably 0° or more and 10° or less, and preferably 0° or more and 5° or less. With regard to the parallelism of other members, an angle misalignment is also allowed, and the difference in angle is preferably 0° or more and 10° or less, and preferably 0° or more and 5° or less.

[0093] 7 and 8 are schematic diagrams showing partial cross-sectional views of a configuration in which a ribbon made of aluminum or the like is used for the first bridge portion 31d. The first bridge portion 31d is ribbon-shaped. The shape of the output terminal 31 when a ribbon is used is not limited to the shape shown in FIG. 7 and FIG. 8. The shape of the output terminal 31 when a ribbon is used can be changed depending on the thickness of the member and the conditions for ultrasonic bonding. When a ribbon is used for the first bridge portion 31d, it is preferable that the element that mainly constitutes the planar portion 31a (the metal element contained in the planar portion 31a at the highest ratio) is different from the element that mainly constitutes the first bridge portion 31d (the metal element contained in the first bridge portion 31d at the highest ratio). It is preferable that the element that mainly constitutes the planar portion 31a is Cu, and the element that mainly constitutes the first bridge portion 31d is other than Cu (e.g., Al).

[0094] An output terminal 31 without a first bridge portion 31d is placed on the ribbon, and the ribbon and the output terminal 31 are integrated by ultrasonic bonding, the first output wire 22Aa is bonded to the output terminal 31, and the second output wire 22Ba is bonded to the output terminal 31. After bonding, the unbonded portion of the ribbon forms the first bridge portion 31d. By applying ultrasonic waves and pressure, the gap between the first leg 31b and the first output wire 22Aa that sandwich the ribbon and the gap between the second leg 31c and the second output wire 22Ba that sandwich the ribbon disappear, and the output terminal having the first bridge portion 31d is firmly bonded to the first output wire 22Aa and the second output wire 22Ba.

[0095] During ultrasonic bonding, the capillary is used to apply pressure to the overlapping portions of the first and second legs 31b and 31c with the ribbon, partially deforming the first and second legs 31b and 31c to bond them. The thickness of the first bridge 31d (ribbon thickness) is preferably approximately the same as the depth to which the capillary is pressed against the member and sunk. The thickness of the first bridge 31d (ribbon thickness) is preferably 70% to 130% of the thickness of the non-bonded portions of the first and second legs 31b and 31c, and more preferably 85% to 115%.

[0096] 9 is a schematic diagram showing a partial cross-sectional view of a configuration using a member in which the first bridge portion 31d is provided on the output terminal 31 before joining. The first bridge portion 31d is plate-shaped. When a member in which the first bridge portion 31d is provided on the output terminal 31 before joining is used, it is preferable that the element that mainly constitutes the planar portion 31a and the element that mainly constitutes the first bridge portion 31d are the same. It is preferable that the element that mainly constitutes the planar portion 31a is Cu, and the element that mainly constitutes the first bridge portion 31d is Cu.

[0097] When a member in which the first bridge portion 31d is provided on the output terminal 31 before bonding is used, the output terminal 31 is placed on the first output wire 22Aa and the second output wire 22Ba, and the first output wire 22Aa and the second output wire 22Ba are bonded to the output terminal 31 by ultrasonic bonding. By applying ultrasonic waves and pressure, the gap between the first leg portion 31b and the first output wire 22Aa and the gap between the second leg portion 31c and the second output wire 22Ba disappear, and the output terminal having the first bridge portion 31d is firmly bonded to the first output wire 22Aa and the second output wire 22Ba.

[0098] From the viewpoint of reducing the inductance of the wiring between the sources, the maximum height H3 from the surface of the first bridge portion 31d facing the output terminal 31 side of the first output wiring 22Aa to the bottom surface of the first bridge portion 31d toward the flat portion 31a (the height of the first bridge portion 31d based on the surface of the first output wiring 22Aa facing the output terminal 31 side) is preferably lower than the height H1 of the first leg portion 31b, which is the distance from the surface of the first output wiring 22Aa facing the output terminal 31 side to the bottom surface of the flat portion 31a. H3 is preferably 0% or more and 50% or less of H1, and more preferably 0% or more and 30% or less. H3 is preferably more than 0% and 50% or less of H1, and more preferably more than 0% and 30% or less.

[0099] From the viewpoint of reducing the inductance of the wiring between the sources, it is preferable that the maximum height H4 from the surface of the second output wiring 22Ba facing the output terminal 31 side to the bottom surface of the first bridge portion 31d toward the flat portion 31a with reference to the surface facing the output terminal 31 side of the second output wiring 22Ba (the height of the first bridge portion 31d with reference to the surface facing the output terminal 31 side of the second output wiring 22Ba) is lower than the height H2 of the second leg portion 31c, which is the distance from the surface facing the output terminal 31 side of the second output wiring 22Ba to the bottom surface of the flat portion 31a. It is preferable that H4 is 0% or more and 50% or less of H2, and preferably 0% or more and 30% or less. It is preferable that H4 is more than 0% and 50% or less of H2, and preferably more than 0% and 30% or less.

[0100] H3 is preferably 500 μm or less, and more preferably 100 μm or less. H3 is preferably 0 μm or more and 500 μm or less, and more preferably 0 μm or more and 100 μm or less. H3 is preferably 50 μm or more and 500 μm or less, and more preferably 50 μm or more and 100 μm or less. For example, since the height of the bonding wire provided on the circuit board is 1 mm or more (approximately 3 mm), the first bridge portion 2d contributes to a low-inductance source connection.

[0101] H4 is preferably 500 μm or less, and more preferably 100 μm or less. H4 is preferably 0 μm or more and 500 μm or less, and more preferably 0 μm or more and 100 μm or less. H4 is preferably 50 μm or more and 500 μm or less, and more preferably 50 μm or more and 100 μm or less. For example, since the height of the bonding wire provided on the circuit board is 1 mm or more (approximately 3 mm), the first bridge portion 2d contributes to a low-inductance source connection.

[0102] Second embodiment A semiconductor device according to a first embodiment includes a first circuit board having a plurality of first semiconductor elements, a second circuit board having a plurality of second semiconductor elements, a third circuit board having a plurality of third semiconductor elements, and a fourth circuit board having a plurality of fourth semiconductor elements, and an output terminal connecting a first output wiring of the first circuit board to a second output wiring of the second circuit board and having a plane portion, a first leg, a second leg, a third leg, a fourth leg, a first bridge portion, and a second bridge portion, the first leg is connected to the first output wiring, the second leg is connected to the second output wiring, the third leg is connected to the third output wiring, and the fourth leg is connected to the fourth output wiring, the first leg and the second leg are connected by the first bridge portion, and the third leg and the fourth leg are connected by the second leg.

[0103] Fig. 10 is a schematic top view of the semiconductor device 200 of the second embodiment. Fig. 11 is a schematic perspective view of the output terminal 31. In the schematic view of Fig. 10, members such as the gate terminal are omitted. In the schematic view of Fig. 10, some members (e.g., terminals) are partially illustrated.

[0104] The semiconductor device 200 of the second embodiment is a modified example of the semiconductor device 100 of the first embodiment.

[0105] Fig. 12 is an equivalent circuit diagram of the semiconductor device 200 of the second embodiment. Figs. 13, 14, 15, and 16 are schematic diagrams of the semiconductor device 200 of the second embodiment with some members removed. Figs. 15 and 16 are cross-sectional views taken along line BB' in Fig. 13.

[0106] The semiconductor device 200 of the second embodiment is a modified example of the semiconductor device 100 of the first embodiment. Descriptions that overlap between the first and second embodiments will be omitted.

[0107] FIG. 12 is an equivalent circuit diagram of a semiconductor device 200 in which MOSFETs are used for the semiconductor elements Q1 to Q8.

[0108] The semiconductor device 200 has a plurality of high-side semiconductor elements (a first semiconductor element Q1, a second semiconductor element Q2, a third semiconductor element Q5, and a fourth semiconductor element Q6) and a plurality of low-side semiconductor elements (a semiconductor element Q3, a semiconductor element Q4, a semiconductor element Q7, and a semiconductor element Q8). In FIG. 1, the first semiconductor element Q1, the second semiconductor element Q2, the semiconductor element Q3, and the semiconductor element Q4 each include three semiconductor elements.

[0109] The first circuit board 2A and the third circuit board 2C are similar components arranged line-symmetrically. The third circuit board 2C corresponds to the first circuit board 2A. The third semiconductor element Q5 corresponds to the first semiconductor element Q1. The semiconductor element Q7 corresponds to the semiconductor element Q3. The wiring 4C corresponds to the wiring 4A. The wiring 5C corresponds to the wiring 5A. The conductive layer 21C corresponds to the conductive layer 21A. The conductive layer 22C corresponds to the conductive layer 22A. The conductive layer 23C corresponds to the conductive layer 23A. The conductive layer 24C corresponds to the conductive layer 24A. The conductive layer 25C corresponds to the conductive layer 25A. The third output wiring 22Ca corresponds to the first output wiring 22Aa. The third power wiring 21Ca corresponds to the first power wiring 21Aa.

[0110] The description of third circuit board 2C and the members formed on third circuit board 2C overlaps with the description of first circuit board 2A and the members formed on first circuit board 2A, so that the description will be omitted in part.

[0111] The second circuit board 2B and the fourth circuit board 2D are similar components arranged line-symmetrically. The fourth circuit board 2D corresponds to the second circuit board 2B. The fourth semiconductor element Q6 corresponds to the second semiconductor element Q2. The semiconductor element Q8 corresponds to the semiconductor element Q4. The wiring 4D corresponds to the wiring 4B. The wiring 5D corresponds to the wiring 5B. The conductive layer 21D corresponds to the conductive layer 21B. The conductive layer 22D corresponds to the conductive layer 22B. The conductive layer 23D corresponds to the conductive layer 23B. The conductive layer 24D corresponds to the conductive layer 24B. The conductive layer 25D corresponds to the conductive layer 25B. The fourth output wiring 22Da corresponds to the second output wiring 22Ba. The fourth power wiring 21Da corresponds to the second power wiring 21Ba.

[0112] The third semiconductor element Q3 is provided on the third circuit board 2C. The fourth semiconductor element Q4 is provided on the fourth circuit board 2D.

[0113] The description of fourth circuit board 2D and the members formed on fourth circuit board 2D overlaps with the description of second circuit board 2B and the members formed on second circuit board 2B, so that the description will be omitted in part.

[0114] The output terminal 31 connects the first output wiring 22Aa, the second output wiring 22Ba, the third output wiring 22Ca, and the fourth output wiring 22Da.

[0115] 11, the output terminal 31 has a flat portion 31a, a first leg 31b, a second leg 31c, a first bridge portion 31d, a third leg 31e, a fourth leg 31f, and a second bridge portion 31g. The output terminal 31 has an opening such as a screw hole in a portion that is connected to the outside. This opening is electrically connected to an external terminal (not shown).

[0116] The flat portion 31a is connected to the first leg 31b, the second leg 31c, the third leg 31e, and the fourth leg 31f. The first leg 31b, the second leg 31c, the third leg 31e, and the fourth leg 31f extend from the flat portion 31a.

[0117] The third leg 31e is connected to the third output wiring 22ACa. The third leg 31e is preferably directly connected to the third output wiring 22Ca. The third leg 31e has a two-fold structure from the flat portion 31a to the connection portion of the third leg 31e and the third output wiring 22Ca.

[0118] The fourth leg 31f is connected to the fourth output wiring 22Da. The fourth leg 31f is preferably directly connected to the fourth output wiring 22Da. The fourth leg 31f has a two-fold bend structure from the flat portion 31a to the connection portion of the fourth leg 31f and the fourth output wiring 22Da.

[0119] The second bridge portion 31g connects the third leg 31e and the fourth leg 31f. The second bridge portion 31g is provided between the third leg 31e and the fourth leg 31f. The second bridge portion 31g is preferably directly and electrically connected to the third leg 31e and the fourth leg 31f. The second bridge portion 31g electrically connects T3 and T4 in the equivalent circuit diagram of FIG. 12.

[0120] The third leg 31e has a bent shape at a connection portion with the planar portion 31a and a connection portion with the third output wiring 22Ca. The fourth leg 31f has a bent shape at a connection portion with the planar portion 31a and a connection portion with the fourth output wiring 22Da. It is preferable that the path from the third output wiring 22Ca to the fourth output wiring 22Da that passes through the third leg 31e does not pass through the bent portions of the third leg 31e and the fourth leg 31f.

[0121] The second bridge portion 31g is preferably a single conductor connecting the third leg 31e and the fourth leg 31f. The second bridge portion 31g is preferably a flat plate-shaped or partially curved ribbon-shaped conductor, for example. When the first bridge portion 31d is plate-shaped, the second bridge portion is also preferably plate-shaped. When the first bridge portion 31d is ribbon-shaped, the second bridge portion 31g is also preferably ribbon-shaped.

[0122] Second bridge portion 31g is preferably a conductor that is not divided into two or more pieces and connects third leg 31e and fourth leg 31f.

[0123] Since second bridge portion 31g is not a thin wire such as a bonding wire, it is unlikely to be cut when fixing output terminal 31 to third circuit board 2C and fourth circuit board D, and is therefore highly reliable.

[0124] Similar to first bridge portion 31d, second bridge portion 31g can connect third leg 31e and fourth leg 31f to a low inductance and connect the source of third semiconductor element Q5 and the source of fourth semiconductor element Q6 to a low inductance. Semiconductor device 200 can suppress oscillation of the semiconductor elements mounted on third circuit board 2C and fourth circuit board 2D in the same manner as oscillation of the semiconductor elements mounted on first circuit board 2A and second circuit board 2B.

[0125] The first terminal 32 is provided on the first circuit board 2A, the second circuit board 2B, the third circuit board 2C, and the fourth circuit board 2D. The first terminal 32 straddles the first circuit board 2A, the second circuit board 2B, the third circuit board 2C, and the fourth circuit board 2D. The first terminal 32 connects the first power wiring 21Aa, the second power wiring 21Ba, the third power wiring 21Ca, and the fourth power wiring 21Da. The first terminal 32 electrically connects the first power wiring 21Aa, the second power wiring 21Ba, the third power wiring 21Ca, and the fourth power wiring 21Da. It is preferable that the first terminal 32 directly and electrically connects the first power wiring 21Aa, the second power wiring 21Ba, the third power wiring 21Ca, and the fourth power wiring 21Da.

[0126] The second terminal 33 is provided on the first circuit board 2A, the second circuit board 2B, the third circuit board 2C, and the fourth circuit board 2D. The second terminal 33 straddles the first circuit board 2A, the second circuit board 2B, the third circuit board 2C, and the fourth circuit board 2D. The second terminal 33 connects the conductive layer 23A, the conductive layer 23B, the conductive layer 23C, and the conductive layer 23D. The second terminal 33 electrically connects the conductive layer 23A, the conductive layer 23B, the conductive layer 23C, and the conductive layer 23D. It is preferable that the second terminal 33 directly and electrically connects the conductive layer 23A, the conductive layer 23B, the conductive layer 23C, and the conductive layer 23D.

[0127] The width of each component is shown in the schematic diagram of Figure 13. The wiring width of the second bridge portion 31g is represented by W5. The wiring width of the third output wiring 22Ca is represented by W6. The wiring width of the fourth output wiring 22Da is represented by W7. The wiring width of the third leg portion 31e is represented by W8. The wiring width of the fourth leg portion 31f is represented by W9.

[0128] The wiring width W5 of the second bridge portion 31g is the length of the second bridge portion 31g in a direction perpendicular to the direction from the third leg 31e to the fourth leg 31f when viewing the second bridge portion 31g from above as shown in the schematic diagram of Figure 2. The wiring width W5 does not take into account the portion where the third leg 31e and the second bridge portion 31g overlap in the Z direction.

[0129] The maximum value of the wiring width W5 of the second bridge portion 31g is preferably 100% or more and 120% or less of the average value of the wiring width W5.

[0130] The minimum value of the wiring width W5 of the second bridge portion 31g is preferably 80% or more and 100% or less of the average value of the wiring width W5.

[0131] The wiring width W6 of the third output wiring 22Ca is the average width of the third output wiring 22Ca including the portion where the third output wiring 22Ca and the third leg 31e are connected.

[0132] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W5 of the second bridge portion 31g is preferably 60% to 100%, and more preferably 65% ​​to 95%, of the wiring width W6 of the third output wiring 22Ca.

[0133] The wiring width W7 of the fourth output wiring 22Da is the average value of the width of the fourth output wiring 22Da including the portion where the fourth output wiring 22Da and the fourth foot 31f are connected.

[0134] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W5 of the second bridge portion 31g is preferably 60% to 100%, and more preferably 65% ​​to 95%, of the wiring width W7 of the fourth output wiring 22Da.

[0135] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W8 of the third leg 31e is preferably 70% to 100%, and more preferably 75% to 95%, of the wiring width W6.

[0136] From the viewpoint of reducing the inductance of the wiring between sources, the wiring width W9 of the fourth leg 31f is preferably 70% to 100% of the wiring width W7, and more preferably 75% to 95%.

[0137] From the viewpoint of reducing the inductance of the wiring between the sources, the wiring width W5 of the second bridge portion 31g is preferably 60% or more and 100% or less of the wiring width W6 of the third output wiring 22Ca and 60% or more and 100% or less of the wiring width W7 of the fourth output wiring 22Da, and more preferably 65% ​​or more and 95% or less of the wiring width W6 of the third output wiring 22Ca and 65% or more and 95% or less of the wiring width W7 of the fourth output wiring 22Da.

[0138] The length direction of the second bridge portion 31g is preferably the direction from the third circuit board 2C to the fourth circuit board 2D. The width direction of the second bridge portion 31g is preferably the width direction of the third output wiring 22Ca. The width direction of the second bridge portion 31g is preferably the width direction of the fourth output wiring 22Da. If the width direction of the second bridge portion 31g is significantly misaligned with the width direction of the fourth output wiring 22Da, it is not preferable that the wiring length becomes long. The width direction of the second bridge portion 31g and the width direction of the third output wiring 22Ca are preferably approximately the same, and the difference in angle between the width direction of the second bridge portion 31g and the width direction of the third output wiring 22Ca is preferably 0° or more and 10° or less, and preferably 0° or more and 5° or less. With regard to the parallelism of other members, an angle misalignment is also allowed, and the difference in angle is preferably 0° or more and 10° or less, and preferably 0° or more and 5° or less.

[0139] FIG. 15 is a schematic diagram showing a partial cross section of a configuration in which a ribbon made of aluminum or the like is used for the second bridge portion 31g. The second bridge portion 31g is ribbon-shaped. The shape of the output terminal 31 when a ribbon is used is not limited to the shapes shown in FIGS. 7 and 8. The shape of the output terminal 31 when a ribbon is used can be changed depending on the thickness of the member and the conditions for ultrasonic bonding. When a ribbon is used for the second bridge portion 31g, it is preferable that the element that mainly constitutes the planar portion 31a is different from the element that mainly constitutes the second bridge portion 31g (the metal element with the highest ratio contained in the second bridge portion 31g). It is preferable that the element that mainly constitutes the planar portion 31a is Cu, and the element that mainly constitutes the second bridge portion 31g is other than Cu (for example, Al).

[0140] An output terminal 31 without a second bridge portion 31g is placed on the ribbon, and the ribbon and the output terminal 31 are integrated by ultrasonic bonding, the third output wire 22Ca is bonded to the output terminal 31, and the fourth output wire 22Da is bonded to the output terminal 31. After bonding, the non-bonded portion of the ribbon forms the second bridge portion 31g. By applying ultrasonic waves and pressure, the gap between the third leg 31e and the third output wire 22Ca that sandwich the ribbon and the gap between the fourth leg 31f and the fourth output wire 22Da that sandwich the ribbon disappear, and the output terminal having the second bridge portion 31g is firmly bonded to the third output wire 22Ca and the fourth output wire 22Da.

[0141] During ultrasonic bonding, the third leg 31e and the fourth leg 31f are pressed with a capillary at the overlapping portion with the ribbon, partially deforming the third leg 31e and the fourth leg 31f to bond them. The thickness of the second bridge 31g (ribbon thickness) is preferably approximately the same as the depth to which the capillary is pressed against the member and sunk. The thickness of the second bridge 31g (ribbon thickness) is preferably 70% to 130%, more preferably 85% to 115%, of the thickness of the non-bonded portion of the third leg 31e and the fourth leg 31f.

[0142] The schematic diagram of Fig. 16 shows a partial cross-sectional view of a configuration using a member in which the second bridge portion 31g is provided on the output terminal 31 before joining. The second bridge portion 31g is plate-shaped. When a member in which the second bridge portion 31g is provided on the output terminal 31 before joining is used, it is preferable that the element that mainly constitutes the planar portion 31a and the element that mainly constitutes the second bridge portion 31g are the same. It is preferable that the element that mainly constitutes the planar portion 31a is Cu, and the element that mainly constitutes the second bridge portion 31g is Cu.

[0143] When a member in which the second bridge portion 31g is provided on the output terminal 31 before bonding is used, the output terminal 31 is placed on the third output wire 22Ca and the fourth output wire 22Da, and the third output wire 22Ca and the fourth output wire 22Da are bonded to the output terminal 31 by ultrasonic bonding. By applying ultrasonic waves and pressure, the gap between the third leg 31e and the third output wire 22Ca and the gap between the fourth leg 31f and the fourth output wire 22Da disappear, and the output terminal having the second bridge portion 31g is firmly bonded to the third output wire 22Ca and the fourth output wire 22Da.

[0144] It is preferable that the first bridge portion 31d and the second bridge portion 31g are mainly composed of the same element.

[0145] It is preferable that no bridge portion is provided between the first leg 31b and the third leg 31e, and the first leg 31b and the third leg 31e are electrically connected to each other without a bridge portion.

[0146] It is preferable that no bridge portion is provided between the second leg 31c and the fourth leg 31g, and the second leg 31c and the fourth leg 31g are electrically connected to each other without a bridge portion.

[0147] From the viewpoint of reducing the inductance of the wiring between the sources as shown in Figs. 14 and 15, the maximum height H7 from the surface of the third output wiring 22Ca facing the output terminal 31 to the bottom surface of the second bridge portion 31g toward the flat portion 31a (the height of the second bridge portion 31g from the surface of the third output wiring 22Ca facing the output terminal 31) is preferably lower than the height H5 of the third leg portion 31e, which is the distance from the surface of the third output wiring 22Ca facing the output terminal 31 to the bottom surface of the flat portion 31a. H7 is preferably 0% or more and 50% or less of H5, and more preferably 0% or more and 30% or less. H7 is preferably more than 0% and 50% or less of H5, and more preferably more than 0% and 30% or less.

[0148] H7 is preferably 500 μm or less, and more preferably 100 μm or less. H7 is preferably 0 μm or more and 500 μm or less, and more preferably 0 μm or more and 100 μm or less. For example, since the height of the bonding wire provided on the circuit board is 1 mm or more (about 3 mm), the second bridge portion 2g contributes to a low-inductance source connection.

[0149] From the viewpoint of reducing the inductance of the wiring between the sources, it is preferable that the maximum height H8 from the surface of the fourth output wiring 22Da facing the output terminal 31 side to the bottom surface of the second bridge portion 31g toward the flat portion 31a (the height of the second bridge portion 31g based on the surface of the fourth output wiring 22Da facing the output terminal 31 side) is lower than the height H6 of the fourth leg portion 31f, which is the distance from the surface of the fourth output wiring 22Da facing the output terminal 31 side to the bottom surface of the flat portion 31a. It is preferable that H8 is 0% or more and 50% or less of H6, and it is preferable that H8 is 0% or more and 30% or less of H6. It is preferable that H8 is more than 0% and 50% or less of H6, and it is preferable that H8 is more than 0% and 30% or less of H6.

[0150] H7 is preferably 500 μm or less, and more preferably 100 μm or less. H7 is preferably 0 μm or more and 500 μm or less, and more preferably 0 μm or more and 100 μm or less. H7 is preferably 50 μm or more and 500 μm or less, and more preferably 50 μm or more and 100 μm or less. For example, since the height of the bonding wire provided on the circuit board is 1 mm or more (about 3 mm), the second bridge portion 2g contributes to a low-inductance source connection.

[0151] H8 is preferably 500 μm or less, and more preferably 100 μm or less. H8 is preferably 0 μm or more and 500 μm or less, and more preferably 0 μm or more and 100 μm or less. H7 is preferably 50 μm or more and 500 μm or less, and more preferably 50 μm or more and 100 μm or less. For example, since the height of the bonding wire provided on the circuit board is 1 mm or more (about 3 mm), the second bridge portion 2g contributes to a low-inductance source connection.

[0152] In the present specification, some elements are represented by element symbols.

[0153] The technical proposal of the specification is appended below. Technical proposal 1 a first circuit board having a plurality of first semiconductor elements; a second circuit board having a plurality of second semiconductor elements; a semiconductor device having an output terminal that connects a first output wiring of the first circuit board and a second output wiring of the second circuit board, the output terminal having a plane portion, a first leg portion, a second leg portion and a first bridge portion, the first leg portion being connected to the first output wiring and the second leg portion being connected to the second output wiring, the first leg portion and the second leg portion being connected to the first bridge portion. Technical proposal 2 the first foot portion and the first bridge portion are directly connected; the second foot portion and the first bridge portion are directly connected; the planar portion and the first bridge portion are electrically connected; A semiconductor device according to Technical Proposal 1, in which the planar portion and the first bridge portion are not directly connected. Technical proposal 3 a wiring width W0 of the first bridge portion is 65% or more and 95% or less of a wiring width W1 of the first output wiring, the wiring width W1 is an average value of the width of the first output wiring including a portion where the first output wiring and the first leg portion are connected, a wiring width W0 of the first bridge portion is 65% or more and 95% or less of a wiring width W2 of the second output wiring, The semiconductor device according to Technical Proposal 1 or 2, wherein the wiring width W2 is the average width of the portion where the second output wiring and the second foot portion are connected. Technical proposal 4 The semiconductor device according to any one of Technical Solutions 1 to 3, wherein the first bridge portion is a single conductor. Technical proposal 5 The semiconductor device according to any one of Technical Solutions 1 to 4, wherein the first bridge portion is a conductor that is not divided into two or more pieces. Technical proposal 6 a width direction of the first bridge portion is a width direction of the first output wiring, A semiconductor device according to Technical Proposal 3, wherein the width direction of the first bridge portion is the width direction of the second output wiring. Technical proposal 7 The width direction of the first leg portion is the width direction of the wiring width W1, The width direction of the second leg portion is the width direction of the wiring width W2, The width W3 of the first leg portion is 75% or more and 95% or less of the wiring width W1, The semiconductor device according to Technical Scheme 3 or 6, wherein the width W4 of the second leg is 75% or more and 95% or less of the wiring width W2. Technical proposal 8 The semiconductor device according to any one of Technical Solutions 1 to 7, wherein the length direction of the first bridge portion is a direction from the first circuit board toward the second circuit board. Technical proposal 9 a third circuit board having a plurality of third semiconductor elements; a fourth circuit board having a plurality of fourth semiconductor elements; the output terminal further includes a third leg, a fourth leg, and a second bridge; the output terminal connects a third output wiring of the third circuit board and a fourth output wiring of the fourth circuit board; the third leg is connected to the third output wiring, the fourth leg is connected to the fourth output wiring, A semiconductor device according to any one of technical proposals 1 to 8, wherein the third foot portion and the fourth foot portion are connected by the second bridge portion. Technical proposal 10 the third leg portion and the second bridge portion are directly connected; the fourth leg portion and the second bridge portion are directly connected; the planar portion and the second bridge portion are electrically connected; A semiconductor device according to Technical Proposal 9, in which the planar portion and the second bridge portion are not directly connected. Technical proposal 11 a wiring width W5 of the second bridge portion is 65% or more and 95% or less of a wiring width W6 of the third output wiring, the wiring width W6 is an average value of the width of a portion where the third output wiring and the third foot are connected, a wiring width W5 of the second bridge portion is 65% or more and 95% or less of a wiring width W7 of the fourth output wiring, the wiring width W7 is an average value of the width of a portion where the fourth output wiring and the fourth foot are connected, The width direction of the second bridge portion is the width direction of the wiring width W6, The width direction of the second bridge portion is the width direction of the wiring width W7, The width direction of the third leg portion is the width direction of the wiring width W6, The width direction of the fourth leg portion is the width direction of the wiring width W7, The width W8 of the third leg portion is 75% or more and 95% or less of the wiring width W6, The semiconductor device according to Technical Proposal 9, wherein the width W9 of the fourth leg portion is 75% or more and 95% or less of the wiring width W7. Technical proposal 12 The second bridge portion is one piece, The semiconductor device according to Technical Solution 9 or 10, wherein the second bridge portion is not divided into two or more portions. Technical proposal 13 A semiconductor device according to any one of technical proposals 1 to 12, wherein the element that mainly constitutes the planar portion is different from the element that mainly constitutes the first bridge portion and / or the element that mainly constitutes the second bridge portion. Technical proposal 14 A semiconductor device described in any one of Technical Solutions 1 to 12, wherein the element that mainly constitutes the planar portion is the same as the element that mainly constitutes the first bridge portion and / or the element that mainly constitutes the second bridge portion.

[0154] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. For example, components of one embodiment may be replaced or changed with components of another embodiment. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0155] 1: Substrate 2: Connection type 2A: 1st circuit board 2B: 2nd circuit board 2C: 3rd circuit board 2D: 4th circuit board 3AH1: First semiconductor element 3AH2: First semiconductor element 3AH3: First semiconductor element 3AL1: Semiconductor element 3AL2: Semiconductor elements 3AL3: Semiconductor element 3BH1: Second semiconductor element 3BH2: Second semiconductor element 3BH3: Second semiconductor element 3BL1: Semiconductor elements 3BL2: Semiconductor elements 3BL3: Semiconductor elements 4A: Wiring 4B: Wiring 4C: Wiring 4D: Wiring 5A: Wiring 5B: Wiring 5C: Wiring 5D: Wiring 6A: Wiring 6B: Wiring 7A: Wiring 7B: Wiring 8: Exterior materials 21: 1st circuit board 21A: Conductive layer 21Aa: 1st power wiring 21B: Conductive layer 21Ba: Second power wiring 21C: Conductive layer 21Ca: 3rd power wiring 21D: Conductive layer 21Da: 4th power distribution line 22A: Conductive layer 22ACa: 3rd output wiring 22Aa: 1st output wiring 22B: Conductive layer 22Ba: 2nd output wiring 22C: Conductive layer 22Ca: 3rd output wiring 22D: Conductive layer 22Da: 4th output wiring 23A: Conductive layer 23B: Conductive layer 23C: Conductive layer 23D: Conductive layer 24A: Conductive layer 24B: Conductive layer 24C: Conductive layer 24D: Conductive layer 25A: Conductive layer 25B: Conductive layer 25C: Conductive layer 25D: Conductive layer 31:Output terminal 31AC: Output terminal 31a: Flat surface 31b: 1st foot 31c: 2nd foot 31d: 1st bridge section 31e: 3rd leg 31f: 4th leg 31g: 2nd bridge section 32: 1st terminal 33: 2nd terminal 100: Semiconductor device 200: Semiconductor device AC: Alternating current output terminal B: Second circuit board D: 4th circuit board Q1: First semiconductor element Q2: Second semiconductor element Q3: Semiconductor elements Q4: Semiconductor elements Q5: Third semiconductor element Q6: Fourth semiconductor element Q7: Semiconductor elements Q8: Semiconductor elements

Claims

1. a first circuit board having a plurality of first semiconductor elements; a second circuit board having a plurality of second semiconductor elements; a semiconductor device having an output terminal that connects a first output wiring of the first circuit board and a second output wiring of the second circuit board, the output terminal having a plane portion, a first leg portion, a second leg portion and a first bridge portion, the first leg portion being connected to the first output wiring, the second leg portion being connected to the second output wiring, and the first leg portion and the second leg portion being connected to each other via the first bridge portion.

2. the first foot portion and the first bridge portion are directly connected; the second foot and the first bridge are directly connected; the planar portion and the first bridge portion are electrically connected; The semiconductor device according to claim 1 , wherein the planar portion and the first bridge portion are not directly connected to each other.

3. a wiring width W0 of the first bridge portion is 65% or more and 95% or less of a wiring width W1 of the first output wiring, the wiring width W1 is an average value of the width of the first output wiring including a portion where the first output wiring and the first foot portion are connected, a wiring width W0 of the first bridge portion is 65% or more and 95% or less of a wiring width W2 of the second output wiring, 2 . The semiconductor device according to claim 1 , wherein the wiring width W2 is an average width of a portion where the second output wiring and the second foot are connected.

4. The semiconductor device according to claim 1 , wherein the first bridge portion is a single conductor.

5. The semiconductor device according to claim 1 , wherein the first bridge portion is a conductor that is not divided into two or more pieces.

6. a width direction of the first bridge portion is a width direction of the first output wiring, The semiconductor device according to claim 3 , wherein a width direction of the first bridge portion is a width direction of the second output wiring.

7. The width direction of the first leg portion is the width direction of the wiring width W1, The width direction of the second leg portion is the width direction of the wiring width W2, The width W3 of the first leg portion is 75% or more and 95% or less of the wiring width W1, 4. The semiconductor device according to claim 3, wherein a width W4 of the second leg is 75% or more and 95% or less of a width W2 of the wiring.

8. The semiconductor device according to claim 1 , wherein the length direction of the first bridge portion is a direction from the first circuit board toward the second circuit board.

9. a third circuit board having a plurality of third semiconductor elements; a fourth circuit board having a plurality of fourth semiconductor elements; the output terminal further includes a third leg, a fourth leg, and a second bridge; the output terminal connects a third output wiring of the third circuit board and a fourth output wiring of the fourth circuit board; the third leg is connected to the third output wiring, the fourth leg is connected to the fourth output wiring, The semiconductor device according to claim 1 , wherein the third leg and the fourth leg are connected to each other via the second bridge portion.

10. the third leg and the second bridge are directly connected; the fourth leg and the second bridge are directly connected; the planar portion and the second bridge portion are electrically connected; The semiconductor device according to claim 9 , wherein the planar portion and the second bridge portion are not directly connected to each other.

11. a wiring width W5 of the second bridge portion is 65% or more and 95% or less of a wiring width W6 of the third output wiring, the wiring width W6 is an average value of the width of a portion where the third output wiring and the third foot are connected, a wiring width W5 of the second bridge portion is 65% or more and 95% or less of a wiring width W7 of the fourth output wiring, the wiring width W7 is an average value of the width of a portion where the fourth output wiring and the fourth foot are connected, The width direction of the second bridge portion is the width direction of the wiring width W6, The width direction of the second bridge portion is the width direction of the wiring width W7, The width direction of the third leg portion is the width direction of the wiring width W6, The width direction of the fourth leg portion is the width direction of the wiring width W7, The width W8 of the third leg portion is 75% or more and 95% or less of the wiring width W6, 10. The semiconductor device according to claim 9, wherein a width W9 of the fourth leg is 75% to 95% of a width W7 of the wiring.

12. The second bridge portion is one piece, The semiconductor device according to claim 9 , wherein the second bridge portion is not divided into two or more portions.

13. 10. The semiconductor device according to claim 1, wherein an element constituting the planar portion is different from an element constituting the first bridge portion and / or an element constituting the second bridge portion.

14. 10. The semiconductor device according to claim 1, wherein an element constituting the planar portion is the same as an element constituting the first bridge portion and / or an element constituting the second bridge portion.

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